JP4159451B2 - Heat-resistant hermetic wall structure, regenerative gas treatment device, and adsorption / desorption gas treatment device - Google Patents

Description

  The present invention relates to a heat-resistant airtight wall structure that partitions spaces in a high-temperature atmosphere, a heat storage gas processing apparatus that uses a heat-resistant airtight wall structure, and an adsorption / desorption gas processing apparatus that uses a heat-resistant airtight wall structure.

  Conventionally, in order to partition spaces under a high temperature atmosphere, a structure in which the spaces are partitioned by a rigid wall material made of a nonmetallic inorganic material is generally known.

However, a rigid wall material made of a conventional non-metallic inorganic material can provide sufficient rigidity and heat resistance as a wall material in a high-temperature atmosphere, but the differential pressure between both spaces sandwiching the wall material is large. In some cases, gas may permeate through the wall material through extremely fine gaps distributed in the wall material, and sufficient airtightness may not be obtained. For example, the gas to be treated and the treated gas may be adjacent to each other. If the wall material made of this non-metallic inorganic material is used for the partition wall of the regenerative gas processing apparatus to be passed, leakage of the gas to be processed and the processed gas occurs due to the permeation, and contamination of the processed gas There is a risk of inconvenience such as a decrease in processing performance of the apparatus.
Incidentally, in order to avoid this gas permeation, it is possible to use a metal wall material, but the metal wall material undergoes severe deformation due to thermal expansion under high temperature use conditions. Since a special structure is required to avoid damage to the surrounding structure due to, there is a difficulty in versatility.
In view of this situation, the main problem of the present invention is to effectively solve the above problems with a rational improvement.

In a heat-resistant airtight wall structure that partitions spaces between high temperatures,
A thin-film metal material is installed between the main wall materials made of heat-resistant non-metallic inorganic materials with rigidity to prevent gas leakage between the spaces in the state of passing through the main wall materials. The structure
The thin film metal material may be fixedly attached to at least one wall main material among the wall main materials positioned on both sides thereof .

In other words, with this configuration, the wall main material itself made of a non-metallic inorganic material itself is a thin film disposed between the wall main materials even though gas permeation may occur through minute voids distributed in the material. The metal material can reliably block gas permeation, so that even when the differential pressure between the two spaces to be partitioned increases, the space between the spaces that transmit through the wall main material Gas leakage can be surely prevented, and a wall structure with excellent airtightness that can reliably prevent various inconveniences due to such gas leakage can be obtained.
In addition, although the thin-film metal material itself is inferior in rigidity and strength, sufficient rigidity and strength as a wall structure can be obtained by arranging the wall main material made of non-metallic inorganic material with rigidity on both sides of the thin-film metal material. It is possible to secure the thin film metal material by these wall main materials and effectively prevent the deterioration of the airtightness due to the damage and deterioration of the thin film metal material. The wall structure can be made excellent in terms of properties.
And, even if the thin-film metal material arranged between the wall main materials has a large thermal expansion property as a metal, the thermal expansion force can be made extremely small by being in the form of a thin film, This makes it possible to effectively avoid damage and deformation of itself and the surrounding structure due to thermal expansion while using a metal material as a constituent material, so that a wall structure excellent in heat resistance and versatility can be obtained. In addition, the wall structure can be made extremely suitable for applications that require high airtightness in a high-temperature atmosphere.

Further, in this configuration , since the thin-film metal material is fixedly attached to at least one of the wall main materials for positioning the thin film metal material on both sides thereof, the following can also be performed. Become.

In other words, in this configuration, the thin film metal material is fixedly attached to at least one wall main material, so that the wall main material and the thin film metal material are integrated by the fixed adhesion. Thereby, the assembly strength as the whole multilayer wall structure which consists of a thin-film-like metal material and a wall main material can be raised further.
And, in order to produce a multilayer wall structure consisting of a thin-film metal material and wall main materials on both sides, a method of adhering the thin-film metal material to at least one wall main material as described above is adopted. By doing so, it is possible to stably and easily perform the stacking work of the thin metal material and the wall main material in a state where it is difficult to cause the displacement of each member, especially at the construction site of the structure with the wall structure. This is suitable in the case of manufacturing the multilayer wall structure described above.

The first characteristic configuration of the present invention relates to a heat-resistant airtight wall structure,
In a heat-resistant airtight wall structure that partitions spaces between high temperatures,
A thin-film metal material is installed between the main wall materials made of heat-resistant non-metallic inorganic materials with rigidity to prevent gas leakage between the spaces in the state of passing through the main wall materials. The structure
Each of the thin-walled metal materials is fixedly attached to each of the wall main members positioned on both sides of the thin-film metal material, and the thin-film metal materials are opposed to each other. It exists in the point arrange | positioned between the said wall main materials in the overlapping state which touches.

That is, if the this configuration, between the walls main member each other made of a heat-resistant non-metallic inorganic material with rigidity, gas leakage between the spaces each other in a state of transmitting them wall main members Since the metal material in the form of a thin film to be prevented is disposed, it is possible to obtain a wall structure that is excellent in airtightness, in terms of strength and durability, heat resistance, and versatility.
Further, since the thin film metal material is fixedly attached to each of the wall main materials positioned on both sides of the thin film metal material, the wall main material and the thin film metal material are the same as in the case of the above configuration. As a result, it is possible to further increase the assembly strength of the entire multilayer wall structure, and to facilitate the superposition of the thin-film metal material and the wall main material in the production of the structure. It can be particularly suitable for the production of multi-layered wall structures at the construction site, and it is advantageous in terms of strength and production in this way, and is also a thin film attached to each wall main material. By overlapping the metal materials, the airtightness can be further enhanced, and the deterioration of the airtightness due to the damage of the thin film metal material can be more effectively prevented.
In particular, with this configuration, it is necessary only to superimpose two sets of one-spec assemblies in which a thin-film metal material is firmly attached to a wall main material in the direction in which the thin-film metal materials face each other. The wall structure can be obtained, which can be further advantageous in terms of manufacturing.

In a heat-resistant airtight wall structure that partitions spaces between high temperatures,
A thin-film metal material is installed between the main wall materials made of heat-resistant non-metallic inorganic materials with rigidity to prevent gas leakage between the spaces in the state of passing through the main wall materials. The structure
The thin-film metal material may be disposed between the wall main materials in a state that allows relative movement in the wall surface direction due to thermal expansion or contraction with the wall main material positioned on both sides thereof. .

That is, according to this configuration, between the walls main member each other consisting of heat-resistant non-metallic inorganic material with rigidity, gas leakage between the spaces each other in a state of transmitting them wall main members Since the metal material in the form of a thin film to be prevented is disposed, it is possible to obtain a wall structure that is excellent in airtightness, in terms of strength and durability, heat resistance, and versatility.
In addition, the thin-film metal material is positioned between the wall main materials in a state where movement in the wall direction by thermal expansion or contraction is permitted, so that expansion and contraction are suppressed during thermal expansion and thermal contraction. It is possible to effectively prevent excessive external stress from acting on the thin film metal material, and in combination with the mechanical protection of the thin film metal material by the wall main material, It is possible to more effectively prevent a decrease in airtightness due to damage.

The second feature configuration of the present invention is a preferred configuration in the implementation of the first feature configuration .
The thin film metal material is formed on a foil having a thickness of 0.001 mm to 0.15 mm.

  In other words, by using a metal material in a foil region having a thickness of 0.001 mm to 0.15 mm as a thin film metal material disposed between wall main materials, an unnecessary increase in thickness of the wall structure due to the intervention of the metal material Unnecessary weight increase can be effectively avoided, and the integrity of the thin-film metal material and the wall main material on both sides thereof can be easily increased, and thereby high versatility can be obtained.

In addition, as a suitable configuration in the implementation of any of the above configurations, a stainless material may be used as the thin film metal material.

  In other words, with this configuration, it is excellent in heat resistance and workability for producing the above-mentioned wall structure in which a thin-film metal material is arranged between wall main materials made of non-metallic inorganic materials. Use of inexpensive stainless steel as a thin-film metal material can be advantageous in terms of cost and production, and because stainless steel is also excellent in corrosion resistance, construction of a structure that handles corrosive gas It is possible to make the wall structure suitable for.

Moreover, as a suitable structure in implementation of either of the said structures , the said wall main material located in each of the both sides of the said thin film-like metal material may be the board | plate material which shape | molded the ceramic fiber material in plate shape.

  In other words, with this configuration, a ceramic fiber material with excellent heat resistance is used to produce the above-mentioned wall structure in which a thin-film metal material is placed between wall main materials made of non-metallic inorganic materials. It is easy to handle because it is lightweight, and it can be made suitable especially when the above multilayer wall structure is manufactured at the construction site of a structure with a wall structure. In addition, the ceramic fiber material is also excellent in corrosion resistance, so it can be made into a wall structure suitable for construction of a structure that handles corrosive gas, and the plate material made of ceramic fiber material has a very small shrinkage rate. Therefore, even in a high temperature atmosphere, damage to the thin film metal material and surrounding structure due to shrinkage of the wall main material can be avoided, and the wall structure that partitions the spaces in a high temperature atmosphere is excellent. Rukoto can.

The third characteristic configuration of the present invention relates to a regenerative gas processing apparatus,
While storing a breathable heat storage material layer in each of a plurality of heat storage chambers partitioned from each other by a partition wall, one end of each of these heat storage chambers is communicated with the combustion chamber,
A target gas to be processed is supplied to the combustion chamber through a number of heat storage chambers out of the plurality of heat storage chambers, and the target gas is processed by combustion in the combustion chambers. In the configuration in which the treated gas is discharged from the combustion chamber through the heat storage chambers of the other part of the number of chambers, switching means for alternately switching between the heat storage chamber on the treated gas passage side and the heat storage chamber on the treated gas passage side is provided. In thermal storage gas processing equipment
The heat-resistant airtight wall structure according to claim 1 or 2 is used as the partition wall for partitioning the heat storage chambers.

In this type of heat storage type gas processing device, the temperature of the heat storage chamber that houses the heat storage material layer rises greatly when the high-temperature gas that has been subjected to the combustion process in the combustion chamber passes. Heat resistance and rigidity are indispensable for the partition wall that partitions the spent gas passage side.
In addition, in order to reliably supply the gas to be processed containing an organic solvent or the like to the combustion chamber for the combustion treatment, the gas to be processed that has entered the heat storage chamber on the gas-passing side passes through the partition wall and is processed gas The partition wall must also be airtight so that it does not leak into the heat storage chamber on the passing side.
That is, the heat-resistant and air-tight structure according to claim 1 or 2, which has the effect as described above in a structure in which a thin-film metal material is disposed between wall main materials made of a heat-resistant nonmetallic inorganic material having rigidity. By adopting the wall structure as the partition wall of the heat storage chamber of the regenerative gas processing device exposed to high temperature, the thin metal film has a large differential pressure between the gas to be processed and the gas to be processed. Even in this case, the gas permeation through the partition walls is surely cut off, and the wall main materials arranged on both sides of the thin-film metal material ensure sufficient rigidity and strength as the partition walls, while these wall main materials are Protects the thin metal material and effectively prevents the deterioration of the airtightness due to the damage or deterioration of the thin metal material, so that it can be made an excellent partition wall in terms of airtightness, strength and durability. Therefore, the untreated gas to be treated is treated with the treated gas. Without being discharged from the can to high regenerative gas treatment device reliable burning process by supplying to ensure the combustion chamber gas to be treated.

A fourth characteristic configuration of the present invention relates to an adsorption / desorption type gas processing apparatus,
While storing a breathable adsorbent layer in each of a plurality of processing chambers partitioned from each other by a partition wall,
Among the plurality of processing chambers, the gas to be processed is passed through the adsorbent layer in the processing chambers of some of the processing chambers, and at the same time, a high temperature desorption gas is supplied to other part of the processing chambers. In the configuration of performing the desorption process of passing through the adsorbent layer in the processing chamber of the number of chambers, the process chamber on the adsorption process side that allows the gas to be processed to pass and the process chamber on the side of the desorption process that allows the desorption gas to pass An adsorption / desorption type gas processing apparatus provided with a switching means for switching,
3. The heat-resistant airtight wall structure according to claim 1 or 2, wherein the partition wall that partitions the processing chambers is formed.

In this type of adsorption / desorption type gas treatment device, the temperature of the treatment chamber on the desorption treatment side is greatly increased by passing a high-temperature desorption gas. Therefore, the partition that divides the treatment chamber into the adsorption treatment side and the desorption treatment side Heat resistance and rigidity are indispensable for the walls.
In addition, since the desorbed gas that has passed through the adsorbent layer and has been desorbed contains an organic solvent or the like, the desorbed gas does not permeate the partition wall and enter the treated gas after the desorbing process. In addition, the partition wall must be airtight.
That is, the heat-resistant and air-tight structure according to claim 1 or 2, which has the effect as described above in a structure in which a thin-film metal material is disposed between wall main materials made of a heat-resistant nonmetallic inorganic material having rigidity. By adopting the wall structure for the partition wall of the processing chamber of the adsorption / desorption type gas processing device exposed to high temperature, the difference between the thin film metal material between the processing chamber on the adsorption processing side and the processing chamber on the desorption processing side Even when the pressure is high, the gas permeation through the partition wall is reliably blocked, and the wall main material arranged on both sides of the thin-film metal material ensures sufficient rigidity and strength as the partition wall, The main wall material protects the thin film metal material and effectively prevents the deterioration of the airtightness due to the damage and deterioration of the thin film metal material, thus making the partition wall excellent in terms of airtightness, strength and durability. Therefore, after desorption treatment including organic solvent, etc., the gas has been adsorbed It can be made highly reliable adsorption and desorption type gas treating apparatus that is not discharged from the processing unit together with scan.

[First Embodiment]
1 to 10 show a regenerative gas processing device that purifies exhaust gas (processed gas CG) containing combustible substances such as organic solvents and paint mist discharged from a paint factory or a printing factory by combustion, By partitioning the inside of the housing 1 arranged at the upper part of the apparatus by the partition wall 2, as the room group of the heat storage chambers 3, eight heat storage chambers 3 arranged in parallel in a plan view are formed in the housing 1, and the housing 1 Below, a switching device 4 that is a switching means for switching the air path that communicates with each heat storage chamber 3 is arranged.

  The housing 1 is formed of an outer stainless steel plate 1 a and an inner fireproof and heat insulating block 1 b, and a fitting groove F for fitting the partition wall 2 is formed inside the housing 1.

  Each heat storage chamber 3 accommodates a breathable packed layer 5 of a heat storage material 5 a, and the upper end of each heat storage chamber 3 is in open communication with a combustion chamber 6 formed in the upper portion of the housing 1. Equipped with burner 7.

  The partition wall 2 that partitions each of the eight heat storage chambers 3 is a ceramic fiber board 2a obtained by forming a ceramic fiber material, which is a non-metallic inorganic material, into a plate shape as a wall main material, and a thin film metal material having a thickness of 0.05 mm. As shown in FIG. 3 and FIG. 4, the structure of the partition wall 2 is formed of one foil-like stainless steel material 2b on one surface of one ceramic fiber board 2a. The two wall materials 2A to which the foil is attached are overlapped with each other so that the foil-like stainless steel materials 2b are opposed to each other, and are fitted into the fitting grooves F formed on the inner side of the housing 1. It is fixed.

  The ceramic fiber board 2a has a very small shrinkage ratio as a wall main material, has rigidity, is excellent in heat resistance and corrosion resistance, and has a form in which minute voids are distributed therein, and is lightweight. It is easy to handle.

  Further, the use of the foil-like stainless steel material 2b, which is excellent in heat resistance and workability as a thin-film metal material and is relatively inexpensive, can be advantageous in terms of cost and production of the partition wall 2, and stainless steel material. Is excellent in corrosion resistance, and can maintain a good airtight state even when a corrosive gas is handled.

  As shown in FIGS. 5 to 10, the switching device 4 includes an octagonal tubular distributor 10 in which eight supply / discharge chambers 8 having an annular arrangement in a plan view are formed by partition walls 9, and a switching valve body. 11 and a cylindrical air chamber 13 for receiving the gas to be processed CG. The valve body 12 is fixedly attached to the upper part of the installation base 14, and the distributor 10 Is arranged concentrically above the valve body 12 and fixedly connected to the valve body 12, and the air chamber 13 is disposed concentrically below the valve body 12. It is connected to 12 annular bottom plates 12a in a suspended manner and is supported from below by a lower frame 14a of the installation base 14.

  The eight heat storage chambers 3 have their lower ends individually communicated with the eight supply / discharge chambers 8 in the distributor 10 whose upper end is closed through the supply / discharge passage 15 and also serve as the top plate of the valve body 12. The bottom plate 10a of the vessel 10 has an annular arrangement in which eight fan-shaped supply / discharge ports 16 are individually positioned corresponding to the supply / discharge chambers 8 (that is, arranged in the rotation direction of the switching valve body 11 described later). As shown in FIGS. 6 and 9, the bottom plate 10a is formed on the lower surface of the bottom plate 10a with an outer peripheral portion 17a, an inner peripheral portion 17b, and eight radial portions 17c. A member 17 is attached.

  A central chamber 18 for receiving the purge gas PG is formed in the central portion of the distributor 10 by a partition cylinder 19, and a purge gas supply path 20 is communicated with the central chamber 18 from the upper end side of the distributor 10. It is.

  As shown in FIGS. 8 and 9, the switching valve body 11 provided in the valve body 12 is a reverse truncated cone including a valve peripheral wall 21, a valve top plate 22, a valve bottom plate 23, and a vertical cylindrical rotating shaft 24. The valve top plate 22 is slidably contacted with the bottom plate 10 a of the distributor 10 (strictly speaking, slidably contacted with the seal member 17), and the valve bottom plate 23 is opened at the upper end of the air chamber 13. Slidably contacted with the edge of the valve body (strictly speaking, slidably contacted with the annular seal member 25 on the side of the air chamber mounted on the edge), and around the longitudinal axis P in the valve body 12. Rotate in the direction indicated by arrow R in the figure.

  The inside of the switching valve body 11 is partitioned into a supply chamber 27 and a discharge chamber 28 in a plan view by two partition walls 26 extending between the valve peripheral wall 21 and the cylindrical rotating shaft 24, and an upper portion in the switching valve body 11. In FIG. 2, a purge chamber 31 is formed by an intermediate bottom plate 29 and an upper partition wall 30 at a location adjacent to one partition wall 26, so that the upper portion of the switching valve body 11 is supplied as an annular row of internal compartment chambers. The chamber 27, the purge chamber 31, and the discharge chamber 28 are arranged in that order from the upper rotation side of the switching valve body 11. Reference numeral 32 denotes a reinforcing rib plate in which a communication port 32a for indoor communication is formed, and the portion connected below the upper partition wall 30 has a similar reinforcing rib plate structure.

  Further, the valve top plate 22 has a treated gas supply port 33 and a purge port 34 which are sequentially communicated with the supply / discharge port 16 on the distributor 10 side in accordance with the rotation of the switching valve body 11. The gas discharge port 35 and the supply chamber 27, the purge chamber 31, and the discharge chamber 28 are individually arranged in corresponding positions, and the same supply / discharge port 16 (strictly speaking, on the distributor 10 side). Are formed so as not to be opposed to each other at the same time with respect to the same supply / exhaust port 16 (enclosed region of the seal member 17).

  Further, the cylindrical rotary shaft 24 whose upper end is located in the central chamber 18 of the distributor 10 is formed with a purge communication port 36 for communicating its internal space with the purge chamber 31. A communication port 37 for the air chamber device that allows the supply chamber 27 to always communicate with the internal space of the air chamber device 13 is formed, and the valve peripheral wall 21 has an internal space around the switching valve body 11 in the valve body device 12. On the other hand, a communication port 38 for a valve body that always communicates with the discharge chamber 28 is formed. In this configuration, a gas supply path 39 that supplies the gas CG to be processed to the air chamber 13 is connected to the air chamber 13. On the other hand, a gas discharge path 40 for discharging the processed gas CG ′ from the valve body 12 is connected to the valve body 12.

  That is, in this regenerative gas processing apparatus, a gas to be processed CG (for example, an organic solvent is introduced from the gas supply path 39 into the supply chamber 27 of the switching valve body 11 through the air chamber 13 and the communication port 37 for the air chamber). Including the discharge air from the painting booth) is connected to the supply port 33 formed in the valve top plate 22 of the switching valve body 11, the supply / discharge port 16 on the distributor 10 side that communicates with the supply port 33, and the supply / discharge port 16. Through the supply / exhaust chamber 8 and the supply / exhaust passage 15 communicating with the supply / exhaust chamber 8 and passing through a part of the heat storage chamber 3 (so-called heat storage chamber 3 on the gas passage side) to reach the combustion chamber 6. In this combustion chamber 6, the pollutants and malodorous substances in the gas CG to be treated are treated by combustion.

  Further, the treated gas CG ′ is passed from the combustion chamber 6 to another heat storage chamber 3 (so-called heat storage chamber 3 on the treated gas passage side) to store heat in the heat storage material 5a accommodated in the heat storage chamber 3. After that, the supply / discharge passage 15 communicating with the heat storage chamber 3, the supply / discharge chamber 8 on the distributor 10 side communicating with the supply / discharge passage 15, the supply / discharge port 16 communicating with the supply / discharge chamber 8, and Through the discharge port 35 on the side of the switching valve body 11 that communicates with the supply / discharge port 16, it is led to the discharge chamber 28 of the switching valve body 11, and subsequently, the communication for the valve body formed on the valve peripheral wall 21 of the switching valve body 11. The gas is led to the gas discharge path 40 through the opening 38 and the internal space around the switching valve body 11 in the valve body 12.

  Further, the purge gas PG introduced from the purge gas supply path 20 into the central chamber 18 of the distributor 10 is formed with a communication hole 24 a and a cylindrical rotary shaft 24 formed at the upper end of the cylindrical rotary shaft 24 in the switching valve body 11. And the purge port 31 formed in the valve top plate 22 of the switching valve body 11 following to the purge chamber 31 of the switching valve body 11 through the purge communication port 36 formed in the cylindrical rotary shaft 24. 34, the supply / discharge port 16 on the distributor 10 side communicating with the purge port 34, the supply / discharge chamber 8 communicating with the supply / discharge port 16, and the supply / discharge passage 15 communicating with the supply / discharge chamber 8, Further, it passes through the other heat storage chamber 3 to reach the combustion chamber 6 and then merges with the treated gas CG ′.

  Then, by rotating the switching valve body 11 in this process, the supply port 33, the purge port 34, and the discharge port 35 formed on the valve top plate 22 of the switching valve body 11 are connected to each other so as to face each other. The exhaust port 16 is sequentially switched, and by this switching, the heat storage chamber 3 through which the gas to be processed CG passes, the heat storage chamber 3 through which the purge gas PG passes, and the heat storage chamber 3 through which the processed gas CG ′ passes are sequentially switched. In the form, as shown in FIG. 10, each heat storage chamber 3 is sequentially switched to the passage state of the gas to be treated CG, the passage state of the purge gas PG, and the passage state of the treated gas CG ′ in this order. The gas to be processed CG is preheated in the process of passing through each heat storage chamber 3 by the heat storage material 5a that has previously stored heat with the passage of the processed gas CG ′.

  And in the structure of the partition wall 2 which forms the thermal storage chamber 3, the airtightness of the partition wall 2 is improved by arrange | positioning the foil-like stainless steel material 2b between ceramic fiber boards 2a, and, thereby, the partition wall 2 Even when the differential pressure between the heat storage chambers 3 on both sides partitioned by the gas is large, the gas to be processed CG in the heat storage chamber 3 through which the gas to be processed CG passes is transmitted through minute gaps distributed in the ceramic fiber board 2a. Thus, the gas to be treated CG is reliably prevented from leaking into the heat storage chamber 3 through which the treated gas passes and mixed into the treated gas CG ′.

  In addition, after passing the gas to be processed CG, the purge gas PG is allowed to pass through each heat storage chamber 3 before passing the processed gas CG ′ next, whereby the gas to be processed CG remaining in the heat storage chamber 3 is passed. Is discharged to the combustion chamber 6 before the passage of the next treated gas CG ′, and the residual treated gas CG is prevented from being mixed into the treated gas CG ′ that next passes through the heat storage chamber 3.

  The purge gas supply passage 20 is an air passage branched from the gas discharge passage 40, and a part of the exhausted gas CG ′ discharged to the gas discharge passage 40 is used as the purge gas PG by this air passage branch. It is like that.

Between the distributor 10 and the switching valve body 11, the communication between the supply port 34 and the discharge port 35 through the gap between the bottom plate 10 a of the distributor 10 and the valve top plate 22 of the switching valve body 11, and the supply port 34. And the purge port 34 are blocked by the sliding contact of the seal member 17 with the valve top plate 22, thereby preventing the gas CG to be processed from being mixed into the processed gas CG ′ due to the gap communication .

  Further, between the air chamber 13 and the switching valve body 11, the inside of the valve body 12 from the air chamber 13 due to the sliding contact of the annular seal member 25 on the air chamber side with respect to the valve bottom plate 23 of the switching valve body 11. The gas to be processed CG is prevented from leaking into the processed gas CG ′ to prevent the gas to be processed CG from being mixed. By preventing these gases from being mixed, pollutants and malodorous substances contained in the gas to be processed CG are prevented. Is discharged from the apparatus together with the processed gas CG ′ without being processed.

  Reference numeral 41 denotes a drive shaft connected to the cylindrical rotary shaft 24 of the switching valve body 11, and 42 denotes a motor that rotates the switching valve body 22 via the speed reducer 43 and the drive shaft 41.

  In short, in the first embodiment, the heat storage chamber 3 uses the ceramic fiber board 2a having a very small shrinkage rate as the wall main material of the partition wall 2 and having excellent rigidity, heat resistance and corrosion resistance, and light weight. Since the foil-like stainless steel material 2b is disposed between the ceramic fiber boards 2a, the handleability is good, and the gas to be processed CG does not permeate the partition wall 2 and enter the processed gas CG '. A partition wall structure with excellent airtightness can be obtained, and by this, the organic solvent contained in the gas to be treated CG (for example, exhaust air from the painting booth) can be reliably burned, and the organic solvent can be removed from the system. It can be set as the heat storage type gas processing apparatus with high safety | security and high reliability which do not discharge | emit.

[Second Embodiment]
FIGS. 4 and 11 to 15 show an adsorption / desorption type gas processing apparatus for purifying exhaust gas (processed gas cg) containing solvent vapor such as an organic solvent or paint mist discharged from a coating factory or a printing factory by adsorption. By dividing the interior of the housing 51 by a partition wall 52, eight processing chambers 53 arranged in parallel in a plan view are formed in the housing 51 as a chamber group of the processing chambers 53, and in the vicinity of the housing 51. Is provided with a switching device 54 that is a switching means for switching the air path that communicates with each processing chamber 53.

  Each processing chamber 53 accommodates a gas-permeable adsorbing layer 55 made of an adsorbent, and the upper ends of the processing chambers 53 extend from the upper portion of the housing 51, and the processed gas outlet 56 and the concentrated gas outlet 57. In addition, the lower end of each of the processing chambers is connected to the purge gas lead-out path 58 and extends from the lower part of the housing 51 to be processed gas introduction path 59, desorption gas introduction path 60, and purge gas introduction path. 61 is connected.

  As shown in FIGS. 11 to 15, the switching device 54 includes a treated gas outlet 56, a concentrated gas outlet 57, a purge gas outlet 58, a gas introduction path 59 to be processed, a desorption gas inlet 60, and a purge. Each of the operating gas introduction passages 61 and a control unit CC that controls the opening and closing of the on-off valve v. The control unit CC performs the on-off valve with the elapse of a predetermined time. Switching of the opening and closing of v is performed, and the processing chamber 53 on the adsorption processing side that has adsorbed the solvent contained in the processing target gas cg by allowing the processing target gas cg to pass before the switching is performed by switching the opening and closing valve v. By passing the high-temperature desorption gas rg, the solvent vapor adsorbed on the adsorbent layer 55 is switched to the process chamber 53 on the desorption process side where the desorption process is performed.

  That is, in this adsorption / desorption type gas processing apparatus, by passing the gas to be processed cg introduced into the processing chamber 53 on the adsorption processing side from the processing gas introduction passage 59 through the adsorbent layer 55 of the processing chamber 53, The solvent vapor contained in the gas cg to be treated is adsorbed and removed by the adsorbent layer 55, and after a predetermined time, the desorption is introduced into the treatment chamber 53 where the adsorption treatment is performed from the desorption gas introduction path 60. By passing the working gas rg through the adsorbent layer 55 in the processing chamber 53, the solvent vapor adsorbed on the adsorbent layer 55 is desorbed into the desorption gas rg.

  The switching of the processing chambers 53 will be described in detail. First, as shown in FIG. 12 (or FIG. 14), the gas to be processed cg is introduced into the four processing chambers 53 and the adsorption processing is performed. Desorption gas rg is introduced to perform the desorption process. Next, as the predetermined time elapses, the purge gas pg is introduced into the processing chamber 53 that has been subjected to the desorption process as shown in FIG. 13 (or FIG. 15), and the adsorbent in the processing chamber 53 after the desorption process. A purge process for cooling and purging the layer 55 is performed. Further, as the predetermined time elapses, as shown in FIG. 14 (or FIG. 12), the gas cg to be treated is introduced into the processing chamber 53 that has been purged, and the adsorption processing is performed. Desorption gas rg is introduced into the processing chamber 53 to perform desorption processing.

  Then, the treated gas cg ′ whose solvent vapor is removed by adsorption treatment and the solvent vapor concentration is reduced to a value that can be released into the atmosphere OA is released from the treatment chamber 56 into the atmosphere OA through the treated gas lead-out path 56. On the other hand, the desorption gas rg ′ (concentrated gas) after the desorption process, which has been included in the state where the solvent vapor is concentrated by the desorption process, is sent from the processing chamber 53 to the solvent recovery apparatus M through the concentrated gas outlet path 57. It is done.

  Further, the purge gas pg ′ after the purge process is configured to be reused as a desorption gas after heating through the purge gas lead-out path 58.

  In this adsorption / desorption type gas processing apparatus, the partition wall 52 that partitions the processing chambers 53 is specifically similar to the partition wall 2 for the heat storage chamber in the heat storage type gas processing apparatus shown in the first embodiment (FIG. 4). 1), that is, formed from a ceramic fiber board 52a obtained by forming a ceramic fiber material, which is a nonmetallic inorganic material, into a plate shape as a wall main material, and a foil-like stainless material 52b, which is a thin film metal material. A wall in which two foil members 52A each having one foil-like stainless steel material 52b attached to one surface of a single ceramic fiber board 52a are overlapped so that the foil-like stainless steel materials 52b are in contact with each other. It has a structure.

  In short, in the second embodiment, in the processing chamber 53, the ceramic fiber board 52a having a very small shrinkage ratio and having excellent rigidity, heat resistance and corrosion resistance as a wall main material of the partition wall 52 is used. Since the foil-like stainless steel material 52b is disposed between the ceramic fiber boards 52a, it is easy to handle and the concentrated gas rg 'does not permeate the partition wall 52 and mix with the treated gas cg'. A partition wall structure having excellent airtightness can be obtained, and thereby, a safe and reliable adsorption / desorption type gas treatment apparatus that does not reliably discharge a high-concentration solvent to the atmosphere can be obtained.

[Another embodiment]
Next, another embodiment will be listed.

  In the said 1st Embodiment, the heat-resistant airtight wall structure by this invention is used for the partition wall 2 of the thermal storage chamber 3 in a rotary valve type thermal storage type gas processing apparatus, and in the said 2nd Embodiment, a tower type adsorption / desorption type gas processing. Although used for the partition wall 52 of the processing chamber 53 in the apparatus, the heat-resistant hermetic wall structure of the present invention has other types such as a tower-type heat storage type gas processing apparatus and a rotary valve type adsorption / desorption type gas processing apparatus. You may use it for apparatus other than these as a gas processing apparatus, a wall structure which requires heat resistance and airtightness, or a building.

  In the above embodiment, the ceramic fiber boards 2a and 52a made of a ceramic fiber material are used as the wall main material made of a non-metallic inorganic material. However, the wall main material may be formed of other non-metallic inorganic materials.

  Further, although the foil-like stainless steel materials 2b and 52b are used as the thin-film metal material, the present invention is not limited to this as long as it is a thin-film metal material, and other thin-film metal materials may be used.

  In the above embodiment, as the heat-resistant and airtight wall structure constituting the partition walls 2 and 52, two sheets in which the thin-film metal materials 2b and 52b are firmly attached to one surface of the wall main materials 2a and 52a that are wall main materials. However, the present invention is not limited to this, and the thin-film metal materials 2b and 52b positioned between the wall main materials 2a and 52a made of non-metallic inorganic material are not limited to this. A structure in which only the wall main materials 2a, 52a are fixedly bonded, or a structure in which the wall main materials 2a, 52a are fixedly bonded, and the thin-film metal materials 2b, 52b are respectively attached to both sides thereof. A structure may be employed in which the wall main members 2a and 52a are disposed between the two wall main members 2a and 52a in a state that allows relative movement in the wall surface direction due to thermal expansion or contraction.

  The thin-film metal materials 2b and 52b arranged between the wall main materials 2a and 52a may be either one or a plurality of stacked metal materials, and both sides of the thin-film metal materials 2b and 52b. For each of the wall main materials 2a and 52a positioned on the wall main material 2a and 52a, the wall main materials 2a and 52a may be either one or a plurality of stacked ones. You may take the structure matched with the main materials 2a and 52a alternately.

  Moreover, what is necessary is just to select an appropriate value for the thickness of each of the thin-film metal materials 2b and 52b and the main wall materials 2a and 52a according to the materials and the use of the wall structure.

Side view of the regenerative gas processing apparatus according to the first embodiment of the present invention. Plan view sectional drawing in the thermal storage chamber part of the thermal storage type gas processing apparatus of 1st Embodiment, and the processing chamber part of the adsorption / desorption type gas processing apparatus of 2nd Embodiment Plan view enlarged sectional view of the heat storage chamber portion of the heat storage type gas processing device of the first embodiment and the processing chamber portion of the adsorption / desorption type gas processing device of the second embodiment. The perspective view of the notch which shows the structure of the partition wall of the thermal storage type gas processing apparatus of 1st Embodiment and the adsorption / desorption type gas processing apparatus of 2nd Embodiment The top view in the divider | distributor part of the thermal storage type gas processing apparatus of 1st Embodiment. Side view sectional drawing of the switching apparatus part of the thermal storage type gas processing apparatus of 1st Embodiment Exploded plan view of the main part of the switching device of the regenerative gas processing apparatus of the first embodiment The disassembled perspective view of the switching apparatus principal part of the thermal storage type gas processing apparatus of 1st Embodiment. The disassembled perspective view of the switching valve body of the heat storage type gas processing apparatus of 1st Embodiment. Functional explanatory diagram of the regenerative gas processing apparatus of the first embodiment Structural diagram of the adsorption / desorption gas processing apparatus of the second embodiment Structural drawing showing the flow of gas in the adsorption / desorption gas processing apparatus of the second embodiment Structural drawing showing the flow of gas in the adsorption / desorption gas processing apparatus of the second embodiment Structural drawing showing the flow of gas in the adsorption / desorption gas processing apparatus of the second embodiment Structural drawing showing the flow of gas in the adsorption / desorption gas processing apparatus of the second embodiment

Explanation of symbols

2 Partition wall 2A Wall material 2a Main wall material (plate material)
2b Thin metal film (stainless steel)
3 Thermal storage room (space)
4 switching means 5 heat storage material layer 6 combustion chamber 52 partition wall 52A wall material 52a wall main material (plate material)
52b Thin film metal (stainless steel)
53 Treatment room (space)
54 switching means 55 adsorbent layer

Claims (4)

A heat-resistant and airtight wall structure that partitions spaces in a high-temperature atmosphere,
A thin-film metal material is installed between the main wall materials made of heat-resistant non-metallic inorganic materials with rigidity to prevent gas leakage between the spaces in the state of passing through the main wall materials. The structure
Each of the thin-walled metal materials is fixedly attached to each of the wall main members positioned on both sides of the thin-film metal material, and the thin-film metal materials are opposed to each other. A heat-resistant airtight wall structure arranged between the wall main members in a superposed state in contact with each other . The heat-resistant hermetic wall structure according to claim 1, wherein the thin-film metal material is formed on a foil having a thickness of 0.001 mm to 0.15 mm . While storing a breathable heat storage material layer in each of a plurality of heat storage chambers partitioned from each other by a partition wall, one end of each of these heat storage chambers is communicated with the combustion chamber,
  A target gas to be processed is supplied to the combustion chamber through a number of heat storage chambers out of the plurality of heat storage chambers, and the target gas is processed by combustion in the combustion chambers. In the configuration in which the treated gas is discharged from the combustion chamber through the heat storage chambers of the other part of the number of chambers, switching means for alternately switching between the heat storage chamber on the treated gas passage side and the heat storage chamber on the treated gas passage side is provided. A heat storage type gas processing device,
  The heat storage type gas processing apparatus which has the heat-resistant airtight wall structure of Claim 1 or 2 in the said partition wall which partitions off the said heat storage chambers. While storing a breathable adsorbent layer in each of a plurality of processing chambers partitioned from each other by a partition wall,
Among the plurality of processing chambers, the gas to be processed is passed through the adsorbent layer in the processing chambers of some of the processing chambers, and at the same time, a high temperature desorption gas is supplied to other part of the processing chambers. In the configuration of performing the desorption process of passing through the adsorbent layer in the processing chamber of the number of chambers, the process chamber on the adsorption process side that allows the gas to be processed to pass and the process chamber on the side of the desorption process that allows the desorption gas to pass An adsorption / desorption type gas processing apparatus provided with a switching means for switching,
  An adsorption / desorption type gas processing apparatus in which the partition wall for partitioning the processing chambers has the heat-resistant and airtight wall structure according to claim 1 or 2.

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