JP4159951B2 - Manufacturing method of semiconductor module - Google Patents

Description

  The present invention relates to a semiconductor module and a manufacturing method thereof, and can be applied to, for example, a power semiconductor module.

  Semiconductor devices, particularly modularized semiconductor devices, include not only conductors such as electrodes and electrode terminals of semiconductor elements but also insulators such as ceramic elements and insulating substrates as constituent elements. May be adopted. For example, wiring of metal wires has been conventionally employed in the manufacture of power semiconductor modules and the like.

  Patent Document 1 discloses a technique for reducing stress applied to an insulating substrate when an electrode terminal soldered to a metallized insulating substrate is bent perpendicularly to the insulating substrate. Further, Patent Document 2 discloses a technique for bending a terminal portion installed on a ceramic substrate in parallel to the ceramic substrate perpendicularly to the ceramic substrate.

JP 7-38037 A JP 2003-68966 A

  Until now, the part where the metal wire is wired in the electrode terminal plate has been provided in parallel to the substrate. For this reason, when the dimension of the electrode terminal board becomes large, the problem that the dimension of the semiconductor module also has arisen. Although it is conceivable to reduce the size of the electrode terminal plate in order to reduce the size of the semiconductor module, it cannot be reduced so much in order to wire the metal wire.

  In the present invention made in view of these circumstances, it is an object to reduce the size of a semiconductor module while sufficiently securing the dimensions of an electrode terminal plate.

A method for manufacturing a semiconductor module according to the present invention includes: (a) a step of providing a first electrode terminal plate in parallel with the insulating substrate by fixing one end thereof on the insulating substrate; and (b) a conducting wire. Connecting one end thereof directly or via the first semiconductor element to the first electrode terminal plate, and (c) of the first electrode terminal plate, the conducting wire is directly or the first is connected via a semiconductor element Tei Ru site, with the site of the end that is not fixed, and a step of bent inclined with respect to the insulating substrate.

According to the manufacturing method of the semiconductor module to the invention, it is possible to reduce the size of the semiconductor modules while the dimensions of the electrode terminal plates sufficiently secured.

Embodiment 1 FIG.
In the present embodiment, the metal wire is connected to the electrode terminal plate, and the electrode terminal plate is inclined with respect to the insulating substrate and bent, for example, substantially vertically. 1 and 2 are conceptual cross-sectional views showing a method of manufacturing a semiconductor module according to the present embodiment in the order of steps.

  First, electrode terminal plates 21 and 22 that are not in contact with each other are provided on the insulating substrate 3 (FIG. 1). The electrode terminal plate 21 has three parts 21a, 21b, and 21c and is connected in this order. At the position 12 between the parts 21a and 21b and the position 13 between the parts 21b and 21c, for example, at right angles, respectively. It can be bent. The plane 3a of the insulating substrate 3 is, for example, metallized, and the portion 21a is fixed on the plane 3a in parallel with the plane 3a, for example, by soldering. Thereby, the site | part 21b inclines with respect to the plane 3a, is extended perpendicularly | vertically, for example, and the site | part 21c is located in parallel with the plane 3a. Then, the semiconductor element 4 is placed on the insulating substrate 3 via the portion 21a. The part 21c may be bent on the same side as the part 21a.

  The electrode terminal plate 22 has three portions 22a, 22b, and 22c and is connected in this order, and the portion 22a is fixed on the flat surface 3a in parallel with this, for example, by soldering. One end of the metal wire 31a is connected to the semiconductor element 4, and the other end is connected to the portion 22b.

  Second, the electrode terminal plate 22 is bent at, for example, a right angle at a position 10 between the portions 22a and 22b and a position 11 between the portions 22b and 22c (FIG. 2). Thereby, the part 22b is inclined with respect to the plane 3a and extends, for example, vertically, and the part 22c is positioned, for example, parallel to the plane 3a. The part 22c may be bent on the same side as the part 22a. Since the other end of the metal wire 31a approaches one end, the metal wire 31a exhibits an arc 31c having a larger curvature than the metal wire 31a shown in FIG.

  By bending the electrode terminal plate 22, the size of the semiconductor module can be reduced with respect to the direction in which the surface 3a expands. Therefore, it is possible to reduce the size of the semiconductor module while sufficiently securing the dimensions of the electrode terminal plate.

  In the second step, since the metal wire 31a exhibits the arc shape 31c, both ends of the metal wire 31a, that is, the connection portion are burdened, and the connection portion may be deteriorated.

  The case where the metal wire 31a exhibits the bend structure 31b is shown in FIG. At this time, the burden on the connecting portion of the metal wire 31a is reduced, and the strength of the semiconductor module against vibration or the like is increased. Therefore, in addition to miniaturization of the semiconductor module, the reliability of the semiconductor module against vibration and the like is improved.

  In the semiconductor module shown in FIG. 2 and FIG. 3, the total length of the metal wire 31a is longer than the distance of the straight line connecting the connecting portions at both ends. For this reason, it is considered that the resistance of the metal wire 31a increases and the amount of heat generated from the metal wire also increases.

  FIG. 4 shows a semiconductor module provided with a metal wire 31d in which the connecting portions are connected by a substantially straight line instead of the metal wire 31a. At this time, the resistance of the metal wire 31d is smaller than that of the metal wire 31a, and the amount of heat generated therefrom is also reduced. Therefore, in addition to miniaturization of the semiconductor module, the amount of heat generated from the metal wire 31d can be reduced.

  The above contents can also be grasped as follows. That is, in the semiconductor module having the insulating substrate 3, the electrode terminal plates 21 and 22, the metal wires 31 a (31 d) serving as the conductive wires, and the semiconductor element 4, the electrode terminal plates 21 and 22 are fixed to the surface 3 a of the insulating substrate 3. First portions 21a and 22a and second portions 21b and 22b connected to the first portions 21a and 22a and extending obliquely with respect to the insulating substrate 3 are provided. The second portions 21b and 22b are provided vertically, for example. The semiconductor element 4 is placed on the first portion 21 a of the electrode terminal plate 21. The metal wire 31 a (31 d) has one end connected to the first part 21 a of the electrode terminal plate 21 through the semiconductor element 4 and the other end directly connected to the second part 22 b of the electrode terminal plate 22.

  When manufacturing the semiconductor module, the following method is adopted. That is, first, the portion 22 a of the electrode terminal plate 22 is fixed on the insulating substrate 3. At this time, the electrode terminal plate 22 is positioned in parallel with the insulating substrate 3 (FIG. 1). Secondly, one end of the metal wire 31a serving as a conducting wire is directly connected to the electrode terminal plate 22. Third, a portion 22b of the electrode terminal plate 22 to which the metal wire 31a is directly connected is inclined with respect to the insulating substrate 3 together with the unfixed end portion 22c, and is bent, for example, vertically.

Embodiment 2. FIG.
In the present embodiment, a metal wire is connected to an electrode terminal plate via a semiconductor element, and the electrode terminal plate is inclined with respect to the insulating substrate and bent, for example, substantially vertically. 5 and 6 are conceptual cross-sectional views showing the method of manufacturing the semiconductor module according to this embodiment in the order of steps.

  First, electrode terminal plates 27 and 28 that do not contact each other are provided on the insulating substrate 3 (FIG. 5). The electrode terminal plate 27 has three portions 27a, 27b, and 27c and is connected in this order, and is bent at a position 102 between the portions 27a and 27b and a position 103 between the portions 27b and 27c, for example, at right angles. It is done. The plane 3a of the insulating substrate 3 is metallized, for example, and the portion 27a is fixed on the plane 3a in parallel with the plane 3a, for example, by soldering. Thereby, the site | part 27b inclines with respect to the plane 3a, is extended perpendicularly | vertically, for example, and the site | part 27c is located in parallel with the plane 3a. The semiconductor element 4 is mounted on the insulating substrate 3 via the part 27a. The part 27c may be bent on the same side as the part 27a.

  The electrode terminal plate 28 has three portions 28a, 28b, and 28c and is connected in this order, and the portion 28a is fixed on the plane 3a in parallel with this by, for example, soldering. The semiconductor element 5 is provided on the surface of the portion 28b opposite to the surface in contact with the insulating substrate 3. One end of the metal wire 32 a is connected to the semiconductor element 4, and the other end is connected to the semiconductor element 5.

  Second, at a position 100 between the parts 28a and 28b and a position 101 between the parts 28b and 28c, for example, they are bent at right angles (FIG. 6). Thereby, the part 28b is inclined with respect to the plane 3a and extends, for example, vertically, and the part 28c is positioned, for example, parallel to the plane 3a. The part 28c may be bent on the same side as the part 28a. Since the other end of the metal wire 32a approaches one end, the metal wire 32a exhibits an arc shape 32c having a larger curvature than the metal wire 31a shown in FIG.

  By bending the electrode terminal plate 28, the size of the semiconductor module can be reduced with respect to the direction in which the surface 3a expands. Therefore, it is possible to reduce the size of the semiconductor module while sufficiently securing the dimensions of the electrode terminal plate.

  In the second step, since the metal wire 32a has an arc shape 32c, both ends of the metal wire 32a, that is, the connection portion are burdened, and the connection portion may be deteriorated.

  The case where the metal wire 32a exhibits the bend structure 32b is shown in FIG. At this time, the burden on the connecting portion of the metal wire 32a is reduced, and the strength of the semiconductor module against vibration or the like is increased. Therefore, in addition to miniaturization of the semiconductor module, the reliability of the semiconductor module against vibration and the like is improved.

  In the semiconductor module shown in FIGS. 6 and 7, the total length of the metal wire 32a is longer than the distance of the straight line connecting the connecting portions at both ends. For this reason, it is considered that the resistance of the metal wire 32a increases and the amount of heat generated from the metal wire 32a also increases.

  FIG. 8 shows a semiconductor module provided with a metal wire 32d in which the connecting portions are connected by a substantially straight line instead of the metal wire 32a. At this time, the resistance of the metal wire 32d is smaller than that of the metal wire 32a, and the amount of heat generated therefrom is also reduced. Therefore, in addition to miniaturization of the semiconductor module, the amount of heat generated from the metal wire can be reduced.

Embodiment 3 FIG.
In this embodiment, both ends of the metal wire are connected to two electrode terminal plates, respectively, and these electrode terminal plates are inclined with respect to the insulating substrate and bent, for example, substantially vertically. 9 and 10 are conceptual cross-sectional views showing the method of manufacturing the semiconductor module according to this embodiment in the order of steps.

  First, electrode terminal plates 23 and 24 that are not in contact with each other are provided on the insulating substrate 3 (FIG. 9). The electrode terminal plate 23 has three parts 23a, 23b, and 23c and is connected in this order. The plane 3a of the insulating substrate 3 is, for example, metallized, and the portion 23a is fixed on the plane 3a in parallel with the plane 3a, for example, by soldering. The semiconductor element 4 is mounted on the insulating substrate 3 via the part 23a. The electrode terminal plate 24 has three portions 24a, 24b, and 24c and is connected in this order, and the portion 24a is fixed on the plane 3a in parallel with this, for example, by soldering. One end of the metal wire 33a is connected to the part 23b, and the other end is connected to the part 24b.

  Secondly, it is bent at a right angle, for example, at a position 112 between the parts 23a and 23b and a position 113 between the parts 23b and 23c. Furthermore, it is bent at, for example, a right angle at a position 110 between the parts 24a and 24b and a position 111 between the parts 24b and 24c (FIG. 10). The parts 23c and 24c may be bent to the same side as the parts 23a and 24a, respectively. Thereby, the parts 23b and 24b are inclined with respect to the plane 3a and extend, for example, vertically, and the parts 23c and 24c are positioned, for example, parallel to the plane 3a. Moreover, since both ends of the metal wire 33a are close to each other, the metal wire 33a has an arc shape 33c having a larger curvature than the metal wire 33a shown in FIG.

  By bending the electrode terminal plates 23 and 24, the size of the semiconductor module can be reduced with respect to the direction in which the surface 3a expands. Therefore, it is possible to reduce the size of the semiconductor module while sufficiently securing the dimensions of the electrode terminal plate.

  In the second step, since the metal wire 33a has an arc shape 33c, both ends of the metal wire 33a, that is, the connection portion are burdened, and the connection portion may be deteriorated.

  FIG. 11 shows a case where the metal wire 33a exhibits a bend structure 33b. At this time, the burden on the connecting portion of the metal wire 33a is reduced, and the strength of the semiconductor module against vibration or the like is increased. Therefore, in addition to miniaturization of the semiconductor module, the reliability of the semiconductor module against vibration and the like is improved.

  In the semiconductor module shown in FIGS. 10 and 11, the total length of the metal wire 33a is longer than the distance of the straight line connecting the connecting portions at both ends. For this reason, it is considered that the resistance of the metal wire 33a increases and the amount of heat generated from the metal wire 33a also increases.

  FIG. 12 shows a semiconductor module provided with a metal wire 33d in which the connecting portions are connected by a substantially straight line instead of the metal wire 33a. At this time, the resistance of the metal wire 33d is smaller than that of the metal wire 33a, and the amount of heat generated therefrom is also reduced. Therefore, in addition to miniaturization of the semiconductor module, the amount of heat generated from the metal wire can be reduced.

Embodiment 4 FIG.
In the present embodiment, two metal wires are connected to two electrode terminal plates, and the electrode terminal plates are inclined with respect to the insulating substrate and bent, for example, substantially vertically. 13 and 14 are conceptual cross-sectional views showing the method of manufacturing the semiconductor module according to this embodiment in the order of steps.

  First, electrode terminal plates 25 and 26 that are not in contact with each other are provided on the insulating substrate 3 (FIG. 13). The electrode terminal plate 25 has three portions 25a, 25b, and 25c and is connected in this order. The plane 3a of the insulating substrate 3 is, for example, metallized, and the portion 25a is fixed on the plane 3a in parallel with the plane 3a, for example, by soldering. The semiconductor element 4 is placed on the insulating substrate 3 via the part 25a. The electrode terminal plate 26 has three portions 26a, 26b, and 26c and is connected in this order, and the portion 26a is fixed on the plane 3a in parallel with this by, for example, soldering. One end of the metal wire 34a is connected to the semiconductor element 4, and the other end is connected to the portion 26b. Further, one end of the metal wire 35a is connected to the part 25b, and the other end is connected to the part 26b.

  Secondly, it is bent at, for example, a right angle at a position 122 between the parts 25a and 25b and a position 123 between the parts 25b and 25c. Furthermore, it is bent at, for example, a right angle at a position 120 between the parts 26a and 26b and a position 121 between the parts 26b and 26c (FIG. 14). Thereby, the parts 25b and 26b are inclined with respect to the plane 3a and extend, for example, vertically, and the parts 25c and 26c are positioned, for example, parallel to the plane 3a. The parts 25c and 26c may be bent on the same side as the parts 25a and 26a. Since both ends of the metal wire 34a are close to each other and both ends of the metal wire 35a are also close to each other, the metal wires 34a and 35a have arc shapes 34c and 35c having a larger curvature than the metal wires 34a and 35a shown in FIG.

  By bending the electrode terminal plates 25 and 26, the dimensions of the semiconductor module can be reduced with respect to the direction in which the surface 3a expands. Therefore, it is possible to reduce the size of the semiconductor module while sufficiently securing the dimensions of the electrode terminal plate.

  In the second step, since the metal wires 34a and 35a have arc shapes 34c and 35c, both ends of the metal wires 34a and 35a, that is, the connection portions are burdened, and the connection portions may be deteriorated.

  FIG. 15 shows a case where the metal wires 34a and 35a exhibit bend structures 34b and 35b. At this time, the load applied to the connecting portion of the metal wires 34a and 35a is reduced, and the strength of the semiconductor module against vibration and the like is increased. Therefore, in addition to miniaturization of the semiconductor module, the reliability of the semiconductor module against vibration and the like is improved.

  In the semiconductor module shown in FIGS. 14 and 15, the total length of the metal wire 34 a is longer than the distance of the straight line connecting the connecting portions at both ends. The total length of the metal wire 35a is also longer than the distance of the straight line connecting the connecting portions at both ends. For this reason, it is conceivable that the resistance of the metal wires 34a and 35a increases and the amount of heat generated from the metal wires 34a and 35a also increases.

  FIG. 16 shows a semiconductor module provided with metal wires 34d and 35d in which the connection portions are connected substantially in a straight line instead of the metal wires 34a and 35a. At this time, the resistance of the metal wires 34d and 35d is smaller than that of the metal wires 34a and 35a, and the amount of heat generated therefrom is also reduced. Therefore, in addition to miniaturization of the semiconductor module, the amount of heat generated from the metal wire can be reduced.

Embodiment 5. FIG.
In the present embodiment, the first metal wire is directly connected to the two electrode terminal plates, and the second metal wire is connected to the two electrode terminal plates via the semiconductor elements, respectively. The plate is inclined with respect to the insulating substrate and bent, for example, substantially vertically. 17 and 18 are conceptual cross-sectional views showing the method of manufacturing the semiconductor module according to this embodiment in the order of steps.

  First, electrode terminal plates 41 and 42 that do not contact each other are provided on the insulating substrate 3 (FIG. 17). The electrode terminal plate 41 has three parts 41a, 41b, 41c and is connected in this order. The plane 3a of the insulating substrate 3 is metallized, for example, and the portion 41a is fixed on the plane 3a in parallel with the plane 3a, for example, by soldering. The semiconductor element 4 is mounted on the insulating substrate 3 via the part 41a. The electrode terminal plate 42 has three portions 42a, 42b, and 42c and is connected in this order, and the portion 42a is fixed on the flat surface 3a in parallel with this, for example, by soldering. The semiconductor element 5 is provided on the surface of the part 42b opposite to the surface in contact with the insulating substrate 3. One end of the metal wire 37 a is connected to the semiconductor element 4, and the other end is connected to the part 42 b via the semiconductor element 5. Further, one end of the metal wire 38a is connected to the part 41b, and the other end is connected to the part 42b.

  Second, at a position 132 between the parts 41a and 41b and a position 133 between the parts 41b and 41c, for example, they are bent at right angles. Furthermore, it is bent at, for example, a right angle at a position 130 between the parts 42a and 42b and a position 131 between the parts 42b and 42c (FIG. 18). The parts 41c and 42c may be bent on the same side as the parts 41a and 42a. Accordingly, the portions 41b and 42b are inclined with respect to the plane 3a and extend, for example, vertically, and the portions 41c and 42c are positioned, for example, parallel to the plane 3a. Since both ends of the metal wire 37a are close to each other and both ends of the metal wire 38a are also close to each other, the metal wires 37a and 38a have arc shapes 37c and 38c having a larger curvature than the metal wires 37a and 38a shown in FIG.

  By bending the electrode terminal plates 41 and 42, the size of the semiconductor module can be reduced with respect to the direction in which the surface 3a expands. Therefore, it is possible to reduce the size of the semiconductor module while sufficiently securing the dimensions of the electrode terminal plate.

  In the second step, since the metal wires 37a and 38a exhibit arcuate shapes 37c and 38c, both ends of the metal wires 37a and 38a, that is, the connection portions are burdened, and the connection portions may be deteriorated.

  FIG. 19 shows a case where the metal wires 37a and 38a exhibit bend structures 37b and 38b. At this time, the load applied to the connecting portion of the metal wires 37a and 38a is reduced, and the strength of the semiconductor module against vibration and the like is increased. Therefore, in addition to miniaturization of the semiconductor module, the reliability of the semiconductor module against vibration and the like is improved.

  In the semiconductor module shown in FIGS. 18 and 19, the total length of the metal wire 37a is longer than the distance of the straight line connecting the connecting portions at both ends. The total length of the metal wire 38a is also longer than the distance of the straight line connecting the connecting portions at both ends. For this reason, it is conceivable that the resistance of the metal wires 37a and 38a increases and the amount of heat generated from the metal wires 37a and 38a also increases.

  FIG. 20 shows a semiconductor module provided with metal wires 37d and 38d in which the connecting portions are connected substantially in a straight line instead of the metal wires 37a and 38a. At this time, the resistance of the metal wires 37d and 38d is smaller than that of the metal wires 37a and 38a, and the amount of heat generated therefrom is also reduced. Therefore, in addition to miniaturization of the semiconductor module, the amount of heat generated from the metal wire can be reduced.

  In any of the above-described embodiments, it is conceivable to employ a thick electrode terminal plate as the electrode terminal plate provided with the semiconductor element. For example, like the semiconductor module shown in FIGS. 21 and 22, an electrode terminal plate 29 having a large portion 29b is employed instead of the electrode terminal plate 42 of the semiconductor module shown in FIGS. Thereby, it becomes easy to discharge | release the heat | fever generated from the semiconductor element 5, and the heat dissipation of a semiconductor module improves.

  The semiconductor element 4 is also provided on the portion 41a of the electrode terminal plate 41, and it is conceivable to use a thick electrode terminal plate instead of the electrode terminal plate 41 in order to improve heat dissipation. The dimension of the semiconductor module increases in the direction in which the surface 3a of the semiconductor layer 3a expands, which is not desirable. Therefore, in order to release the heat generated from the semiconductor 4, for example, the surface of the insulating substrate 3 opposite to the side where the semiconductor element 4 is provided on the metal base plate P for heat dissipation is in contact with the surface of the metal base plate P. Thus, it is possible to employ provision of the semiconductor module (FIGS. 21 and 22).

FIG. 3 is a conceptual cross-sectional view showing the semiconductor module manufacturing method in the first embodiment. FIG. 3 is a conceptual cross-sectional view showing the semiconductor module manufacturing method in the first embodiment. 1 is a conceptual cross-sectional view showing a semiconductor module described in Embodiment 1. FIG. 1 is a conceptual cross-sectional view showing a semiconductor module described in Embodiment 1. FIG. In Embodiment 2, it is a notional cross-sectional view showing a semiconductor module manufacturing method. In Embodiment 2, it is a notional cross-sectional view showing a semiconductor module manufacturing method. FIG. 6 is a conceptual cross-sectional view showing a semiconductor module, which is described in a second embodiment. FIG. 6 is a conceptual cross-sectional view showing a semiconductor module, which is described in a second embodiment. In Embodiment 3, it is a notional sectional view showing a semiconductor module manufacturing method. In Embodiment 3, it is a notional sectional view showing a semiconductor module manufacturing method. FIG. 5 is a conceptual cross-sectional view showing a semiconductor module described in a third embodiment. FIG. 5 is a conceptual cross-sectional view showing a semiconductor module described in a third embodiment. In Embodiment 4, it is a conceptual sectional view showing a semiconductor module manufacturing method. In Embodiment 4, it is a conceptual sectional view showing a semiconductor module manufacturing method. FIG. 10 is a conceptual cross-sectional view illustrating a semiconductor module, which is described in a fourth embodiment. FIG. 10 is a conceptual cross-sectional view illustrating a semiconductor module, which is described in a fourth embodiment. In Embodiment 5, it is a notional cross-sectional view showing a semiconductor module manufacturing method. In Embodiment 5, it is a notional cross-sectional view showing a semiconductor module manufacturing method. FIG. 10 is a conceptual cross-sectional view showing a semiconductor module, which is described in a fifth embodiment. FIG. 10 is a conceptual cross-sectional view showing a semiconductor module, which is described in a fifth embodiment. FIG. 10 is a conceptual cross-sectional view showing a semiconductor module, which is described in a fifth embodiment. FIG. 10 is a conceptual cross-sectional view showing a semiconductor module, which is described in a fifth embodiment.

Explanation of symbols

3 Insulating substrate, 3a surface, 4,5 semiconductor element, 21-29, 41, 42 electrode terminal plate, 21a-29a, 41a, 42a, 21b-29b, 41b, 42b part, 31a-35a, 37a, 38a metal wire .

Claims (3)

(A) a step of fixing the first electrode terminal plate at one end thereof on the insulating substrate and providing it in parallel with the insulating substrate;
(B) connecting one end of the conducting wire to the first electrode terminal plate directly or via a first semiconductor element;
(C) of the first electrode terminal plate, wherein the conductive wire is Ru Tei is connected directly to or through the first semiconductor element region, together with part of the end that is not fixed, inclined with respect to said insulating substrate And a step of bending the semiconductor module. In the step (a), a second electrode terminal plate is further provided on the insulating substrate,
The method of manufacturing a semiconductor module according to claim 1, wherein in the step (b), the other end of the conducting wire is connected to the second electrode terminal plate via a second semiconductor element. In the step (a), the second electrode terminal plate is further provided in parallel with the insulating substrate with one end fixed on the insulating substrate,
In the step (b), the other end of the conducting wire is further connected to the second electrode terminal plate,
2. In the step (c), a portion of the second electrode terminal plate to which the conductive wire is connected is further bent at an angle with respect to the insulating substrate together with a portion of the end that is not fixed. The manufacturing method of the semiconductor module of description.

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