JP4170943B2 - Substrate processing equipment - Google Patents

Description

  The present invention relates to a substrate processing apparatus such as a coating and developing processing apparatus for applying a resist solution onto a semiconductor wafer and developing the resist solution.

  For example, in a photoresist processing step in the manufacture of semiconductor devices, a substrate such as a semiconductor wafer (hereinafter referred to as “wafer”) is exposed to a pattern, subjected to a temperature adjustment process after a heat treatment, and then developed. . For such a series of processes, a coating and developing apparatus has been conventionally used.

  In this coating and developing apparatus, a series of processes necessary for coating and developing a wafer, for example, a resist coating process for applying a resist solution, a heating process for heating the wafer after the exposure process, and a wafer after the heating process are performed. There are provided various processing apparatuses for individually performing temperature adjustment processing for temperature adjustment and development processing for performing development processing on the wafer after the temperature adjustment processing is completed. Then, loading / unloading of wafers into / from each processing apparatus and transfer of wafers between the processing apparatuses are performed by a main transfer apparatus.

  By the way, only the transfer with respect to each part by such a main transfer apparatus increases the burden on the main transfer apparatus, which may cause a reduction in the throughput of the entire apparatus.

  Therefore, for example, in Patent Document 1 below, a processing unit group is configured by a predetermined processing unit among processing units for performing continuous process processing, and each of these processing unit groups is provided with a substrate delivery position. While the sub-transport robot transports the substrate between the substrate delivery position and the processing unit constituting the processing unit group, the processing unit other than the processing unit constituting the processing unit group and the substrate delivery position of the processing unit group Discloses a technique in which a main transfer robot transfers a substrate. As a result, the burden on the transfer device can be reduced and the throughput can be improved.

  For example, the temperature adjustment process is performed between the exposure process and the development process after the heat process, but the time required for the temperature adjustment process tends to be long and the throughput tends to be reduced. According to the above, in order to transport the substrate between the processing unit that performs the heating process and the processing unit that performs the temperature adjustment process by the sub-transport robot that reduces the burden, the time from the end of the heating process to the start of the development process is shortened. In addition, it is possible to reduce the influence of the time required for the temperature adjustment process on the decrease in throughput.

JP-A-8-162514

  However, in the technique disclosed in the above publication, the actual time required for the temperature adjustment process is not different from the conventional one, and there is a limit to reducing the influence of the time required for the temperature adjustment process on the throughput reduction. .

  In the technique disclosed in the above publication, the substrate is carried into the processing unit that performs the heat treatment or the processing unit that performs the temperature adjustment process via the sub-transport robot. There is a problem that the thermal history of the substrate before the conditioning process varies and processing at a precise temperature cannot be performed. In particular, recently, there is a tendency to make the heating plate and temperature control plate thinner and respond quickly to temperature changes. In such a case, if a substrate with a variation in thermal history is introduced, the temperature of the heating plate or temperature control plate is increased. As a result, it is difficult to process the substrate at a precise temperature.

  The present invention has been made in view of the above points, and an object of the present invention is to provide a substrate processing apparatus that can substantially reduce the time required for temperature control processing of a substrate.

  A second object of the present invention is to provide a substrate processing apparatus capable of performing thermal processing and temperature control processing of a substrate more precisely.

  On the other hand, in order to make the entire coating and developing treatment apparatus compact, a plurality of heat treatment units and temperature control processing units are collectively arranged in a multi-stage together with a conveying device, thereby saving the space for the coating and developing treatment apparatus. Has been achieved.

  When the diameter of the wafer W increases, all the processing units increase in size. Therefore, in order to save space, it is necessary to further increase the arrangement of the processing units.

  However, when the heat treatment unit becomes larger, the heat amount of the heat treatment unit also increases. Accordingly, when the heat treatment apparatus is arranged in the vicinity of another processing unit as one processing unit in the heat treatment unit group as in the past, other processing for performing liquid processing on the wafer W near normal temperature. There is a possibility that temperature control in a unit, for example, a resist coating apparatus or the like cannot be performed accurately. Further, when the temperature control is disturbed in these processing units, there arises a problem that the film thickness of the resist film changes.

  The third object of the present invention made in view of the above circumstances is to provide a substrate processing apparatus capable of precisely performing temperature control in a processing unit for performing liquid processing on a substrate.

  The substrate processing apparatus of the present invention is disposed so as to face each opening of the processing unit having an opening for delivering the substrate on both sides, and with the processing unit via the opening. 1st and 2nd main conveyance part which carries in / out of a board | substrate in between, The said process unit delivers a board | substrate between the said 1st and 2nd main conveyance part through the said opening part And a temperature control unit for adjusting the substrate to a predetermined temperature, a first processing unit for performing thermal processing on the substrate, a second processing unit for performing thermal processing on the substrate, A sub-transport unit for transporting the substrate between the temperature control unit, the first processing unit, and the second processing unit, and the temperature control unit, the first processing unit, and the second processing unit. The processing units are arranged in a straight line.

  In the substrate processing apparatus of the present invention, the processing units are arranged in multiple stages in the vertical direction.

  The substrate processing apparatus of the present invention further includes a liquid supply unit that is disposed at a position where the substrate can be transferred to and from the first or second transfer unit and supplies a predetermined liquid to the substrate.

The substrate processing apparatus of the present invention, prior Symbol liquid supply portion is disposed in multiple stages in the vertical direction.

  The substrate processing apparatus of the present invention further includes an inspection unit that is disposed at a position where the substrate can be delivered to or from the first or second main transfer unit and inspects the substrate.

  In the substrate processing apparatus of the present invention, the inspection units are arranged in multiple stages in the vertical direction.

  In the substrate processing apparatus of the present invention, the inspection unit performs micro inspection on the substrate.

  In the substrate processing apparatus of the present invention, the processing unit is further arranged on the opposite side of the surface facing the processing unit in the first main transfer unit.

  In the substrate processing apparatus of the present invention, a receiving unit that once receives and holds the substrate before and after the processing is further disposed on the opposite side of the surface facing the first or second main transfer unit in the processing unit.

  The substrate processing apparatus of the present invention further includes an inspection unit that is disposed in the receiving unit and inspects the substrate.

  In the substrate processing apparatus of the present invention, the inspection unit performs a macro inspection on the substrate.

  In the present invention, the substrate further includes an inspection unit that is disposed at a position where the substrate can be transferred to or from the first main transport unit or at the receiving unit, and inspects the substrate. The substrate can be inspected efficiently within the processing step.

A substrate processing apparatus as a reference example includes a substrate transport apparatus that transports a substrate and processing units disposed on both sides and a front surface of the substrate transport apparatus, and at least one of the processing units is disposed in multiple stages in a vertical direction. The processing unit in which the substrate transfer device is a vertical transfer type capable of delivering a substrate to each unit, and a support member that supports the substrate transfer device in the vertical direction is disposed on the front surface. Is attached to the side.

In the above reference example , the substrate transfer device is a vertical transfer type that can deliver a substrate to each unit, and a support member that supports the substrate transfer device in the vertical direction is disposed on the front surface. Since it is attached to the processing unit side, it is possible to easily perform maintenance on the substrate transfer apparatus from the opposite side of the processing unit side.

A substrate processing apparatus as a reference example includes a first processing unit group in which first processing units that perform liquid processing by supplying a predetermined liquid on a substrate are stacked in multiple stages, and heat-treating the substrate. A second processing unit group in which a second processing unit in which a heating unit to be performed and a temperature control unit for performing a temperature control process on the substrate are integrated adjacent to each other and stacked in multiple stages; and the liquid processing is performed. An exposure unit that performs an exposure process on the broken substrate, and the substrate is waited at a temperature control unit of the second processing unit before the substrate is carried into the exposure unit.

In the above reference example , in addition to the function of performing the temperature adjustment process, the temperature control unit of the second processing unit can also have a function as a standby place for waiting the substrate before exposure, for example, holding the substrate before exposure There is no need to provide a separate cassette.

  As described above, according to the present invention, the time required for the substrate temperature adjustment process can be substantially reduced, and the adverse effect on the throughput of the time required for the substrate temperature adjustment process can be reduced as much as possible.

  Further, according to the present invention, it is possible to precisely control the temperature in the first processing unit group for processing a substrate near normal temperature.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  1 to 3 are views showing an overall configuration of a substrate processing apparatus according to an embodiment of the present invention. FIG. 1 is a plan view, FIG. 2 is a front view, and FIG. 3 is a rear view.

  The substrate processing apparatus 1 carries a plurality of semiconductor wafers W as wafers to be processed in a wafer cassette CR, for example, 25 units, from the outside to the system or unloads them from the system, or carries a semiconductor wafer W into the wafer cassette CR. A cassette station 10 serving as a receiving unit for carrying out, and various single-wafer processing units for performing predetermined processing on the semiconductor wafer W one by one in the coating and developing process are arranged in multiple stages at predetermined positions. It has a configuration in which a processing station 12 and an interface unit 14 for transferring the semiconductor wafer W between the processing station 12 and an exposure apparatus (not shown) provided adjacent to the processing station 12 are integrally connected.

  In the cassette station 10, as shown in FIG. 1, a plurality of, for example, five wafer cassettes CR are placed in a row in the X direction at the position of the protrusion 20a on the cassette mounting table 20 with the respective wafer entrances facing the processing station 12 side. The wafer transfer body 22 which is placed and movable in the cassette arrangement direction (X direction) and the wafer arrangement direction (Z direction) of the wafers stored in the wafer cassette CR selectively accesses each wafer cassette CR. ing. Further, the wafer transfer body 22 is configured to be rotatable in the θ direction so that it can also access a heat treatment system unit belonging to a third processing unit portion G3 having a multi-stage structure, which will be described later, as shown in FIG. It has become.

  As shown in FIG. 1, the processing station 12 includes a third processing unit G3, a fourth processing unit G4, and a fifth processing unit G5 from the cassette station 10 side on the rear side of the apparatus (upper side in the drawing). A first main wafer transfer section A1 as a first main transfer section is provided between the third processing unit section G3 and the fourth processing unit section G4. As will be described later, the first main wafer transfer unit A1 includes a first processing unit unit G1, a third processing unit unit G3, a fourth processing unit unit G4, and the like. It is installed so that it can be selectively accessed. Further, a second main wafer transfer unit A2 as a second main transfer unit is provided between the fourth processing unit G4 and the fifth processing unit G5, and the second main wafer transfer unit A2 is provided. The second main wafer transfer body 17 is installed so that it can selectively access the second processing unit part G2, the fourth processing unit part G4, the fifth processing unit part G5, and the like.

  Further, a heat treatment unit is installed on the back side of the first main wafer transfer unit A1, for example, an adhesion unit (AD) 110 for hydrophobizing the wafer W, a heating unit (for heating the wafer W) ( HP) 113 is stacked in two steps from the bottom as shown in FIG. The adhesion unit (AD) may further include a mechanism for adjusting the temperature of the wafer W. On the back side of the second main wafer transfer unit A2, a peripheral exposure device (WEE) 120 that selectively exposes only the edge portion of the wafer W and an inspection unit that inspects the resist film thickness applied to the wafer W are provided. An inspection device 119 is provided. These peripheral exposure apparatus (WEE) 120 and inspection apparatus 119 may be arranged in multiple stages. In addition, a heat treatment unit may be arranged on the back side of the second main wafer transfer unit A2 similarly to the back side of the first main wafer transfer unit A1.

  As shown in FIG. 3, in the third processing unit G3, an oven-type processing unit that performs a predetermined process by placing the wafer W on a mounting table, for example, a first heat treatment unit that performs a predetermined heat treatment on the wafer W. A high-temperature heat treatment unit (BAKE), a high-precision temperature control unit (CPL) that heat-treats the wafer W with high-precision temperature control, and a transfer part of the wafer W from the wafer carrier 22 to the main wafer carrier 16 The transition unit (TRS) and the temperature control unit (TCP) which become the above are stacked in, for example, 10 stages in order from the top. In the third processing unit G3, in the present embodiment, the third stage from the bottom is provided as a spare space. Even in the fourth processing unit G4, for example, a post-baking unit (POST) as a fourth heat treatment unit, a pre-baking unit (PAB) which is a second heat treatment unit for performing heat treatment on the wafer W after resist application, high accuracy The temperature control units (CPL) are stacked in, for example, 10 stages in order from the top. Further, in the fifth processing unit G5, for example, a post-exposure baking unit (PEB) and a high-precision temperature control unit (CPL) are provided in, for example, 10 stages from the top as the third heat treatment unit for performing heat treatment on the exposed wafer W. It is superimposed on.

  In FIG. 1, a first processing unit part G1 and a second processing unit part G2 are provided side by side in the Y direction on the apparatus front side of the processing station 12 (downward in the drawing). Between the first processing unit G1 and the cassette station 10 and between the second processing unit G2 and the interface unit 14, the temperature of the processing liquid supplied to the processing units G1 and G2 is controlled. Liquid temperature control pumps 24 and 25 to be used are respectively provided, and further, clean air from an air conditioner (not shown) provided outside the processing system is supplied to the inside of the processing units G1 to G5. Ducts 31 and 32 are provided.

  As shown in FIG. 2, in the first processing unit G1, five spinner type processing units, for example, resist coatings, are provided as liquid supply units for performing predetermined processing by placing a semiconductor wafer W on a spin chuck in a cup CP. The unit (COT) has three stages, and the bottom coating unit (BARC) for forming an antireflection film to prevent light reflection at the time of exposure is stacked in two stages, and five stages in order from the bottom. Similarly, in the second processing unit section G2, five spinner type processing units, for example, development units (DEV) are stacked in five stages in order from the bottom. In the resist coating unit (COT), the drainage of the resist solution is troublesome both in terms of mechanism and maintenance, and thus is preferably arranged in the lower stage. However, it can be arranged in the upper stage as required.

  The first to fifth processing units G1 to G5, the adhesion unit 110, the heating unit (HP) 113, the exposure processing device (WEE) 120, and the inspection device 119 can be removed for each maintenance. Further, a panel 40 (FIG. 1) on the back side of the processing station 12 is also attached so as to be removable or openable.

  In addition, chemical chambers (CHM) 26 and 27 serving as liquid supply mechanisms for supplying the above-described predetermined processing liquids to the processing unit parts G1 and G2 are provided at the bottom of the first and second processing unit parts G1 and G2. Are provided.

  A central control unit 8 that controls the entire system of the substrate processing apparatus 1 is provided below the cassette station 10.

  A portable pickup cassette CR and a stationary buffer cassette BR are arranged in two stages on the front surface of the interface section 14, and a wafer transfer body 27 is provided in the center. The wafer transfer body 27 moves in the X and Z directions to access both cassettes CR and BR. Further, the wafer transfer body 27 is configured to be rotatable in the θ direction so that it can also access the fifth processing unit G5. Furthermore, as shown in FIG. 3, a plurality of high-precision temperature control units (CPL) are provided on the back surface of the interface unit 14, for example, two stages in the vertical direction. The wafer transfer body 27 can also access this temperature control unit (CPL).

  Next, the configuration of the first main wafer transfer unit A1 as the main transfer unit will be described with reference to FIGS. Since the second main wafer transfer unit A2 is the same as the first main wafer transfer unit A1, the description thereof is omitted.

  In FIG. 4, the main wafer transfer unit A1 is surrounded by a casing 41 and a door 38 attached to the back side of the casing 41 so as to be openable and closable. The illustration of the door 38 is omitted. A window 38a is formed in the door 38 so as to allow access to the adhesion unit (AD) 110, and in the case of the second main wafer transfer portion A2, the peripheral exposure apparatus 120 and the inspection apparatus 119 can be accessed. Yes. Windows 41b and 41a are respectively provided on the front surface and the side surface so that the housing 41 can also be accessed from the outside. Five front windows 41b are provided (FIG. 5) for delivering the wafer W to and from the first processing unit G1 arranged in five stages, while the side windows 41a are provided. As shown in FIG. 6, ten wafers W are provided to transfer the wafers W to and from the third and fourth processing unit portions G4 arranged in ten stages. It can be increased or decreased as needed. Further, on both side surfaces of the casing 41, surrounding members 44 that connect the third and fourth processing unit parts G3 and G4 have a small gap u with respect to the processing unit parts G3 and G4. Each is attached. The gap u is a distance that can suppress the generation and intrusion of particles, and is, for example, 0.5 mm. The processing unit portions G3 and G4 of the surrounding member 44 have shock-absorbing packings 30 respectively, and corresponding windows 30a are also formed in the packings 30 as shown in FIG. In addition, partition plates 34 are provided so as to partition each window 30a in the surrounding member.

  Further, in FIG. 4, the surrounding member 44 having the same configuration as the surrounding member 44 is also provided in a portion corresponding to the five openings 97 provided in the casing 41 ′ on the first and second processing unit portions G <b> 1 and G <b> 2 side. 'Is attached to the main wafer transfer portion A1 (A2) with a small gap u (for example, 0.5 mm).

  At the bottom of the first main wafer transfer unit A1, for example, four fans 36 for controlling the atmospheric pressure, temperature and humidity are provided. The operation of these fans 36 is controlled by the central control unit 8 (FIG. 2).

  As shown in FIGS. 4 and 5, a vertical pole 33 is installed on the first and second processing unit parts G <b> 1 and G <b> 2 side in the housing 44. As shown in FIG. 7, a pair of pulleys 51 and 52 are attached to the upper end portion and the lower end portion, and an endless belt 49 serving as a vertical driving means is stretched between the pulleys 51 and 52. A support 45 of the first main wafer transfer body 16 is connected to the vertical drive belt 49 via a belt clamp 47. 4 and 5, the support portion 45 is provided with a flange portion 45a. The flange portion 45a is slidably engaged with sleeves 33a formed on both poles 33, respectively. . The lower pulley 52 is connected to the rotation shaft Ma of the drive motor M fixedly arranged at the bottom of the pole 33, and constitutes a drive pulley. By such a vertical belt driving mechanism and a vertical sliding mechanism, the main wafer transfer body 16 can be moved up and down in the vertical direction by the driving force of the driving motor M.

  The lifting mechanism described above is similarly installed on the other pole 33, but the drive motor M may not be provided on the other pole 33.

  The main wafer transfer body 16 has a motor 50 built in the support portion 45, and a rotating rod 46 rotatable in the θ direction (FIG. 5) is connected to the motor 50. The arm base end 55 which is the base end of the three arms 7a, 7b and 7c is fixed.

  FIG. 8 is a view of the main wafer transfer body 16 as seen from the front side in the state of FIG. Vertical members 95 are attached to both sides of the distal end portion of the arm base end portion 55, and a shielding plate 9 that blocks radiant heat from both arms is attached to the vertical members 95 between the upper arm 7a and the middle arm 7b. Further, an attachment member 96 that extends between these vertical members 95 is attached. A pair of optical sensors 94 is provided at the center of the mounting member 96 and at the tip of the arm base end portion 55, whereby the presence or absence of the wafer W on each arm and the protrusion of the wafer W are confirmed.

  9 is a cross-sectional view showing the configuration of the base end portion 55 of the main wafer transfer body 16, and FIG. 10 is a cross-sectional view taken along line [10]-[10] in FIG. Arm support plates 54 are fixed to the arm base ends of the arms 7a to 7c, respectively. These arm support plates 54 are formed in an L-shaped cross section, and each arm support plate 54 has an arm carriage 56 that is movable in the arm longitudinal direction along a rail 61 laid on the base 55a of the base end portion 55. Are fixedly attached.

  Under each arm carriage 56, a guide 62 slidably engaged with each rail 61 is provided. Further, the inner side surface of each arm carriage 56 is provided in the vicinity of the pulley 63 and the arm forward end position (the distal end portion 55c of the base 55) respectively disposed near the arm original position (the base end portion 55b of the base 55). The belts 66 are respectively fixed to the drive belts 65 spanned between the pulleys 64. The pulleys 63 are coaxially coupled to pulleys 68 via bearings 67, respectively, and the pulleys 68 are coupled to pulleys 70 via drive belts 69, respectively. The pulleys 70 are respectively connected to the rotation shaft of the drive motor 60. It is fixed.

  When the rotation shaft of each motor 60 rotates, each pulley 63 rotates via each pulley 70, each drive belt 69, and each pulley 68, and each drive belt 65 is driven by the rotation drive of each pulley 63, and each drive belt. Each arm carriage 56 moves along the rail 61 along with the rail 65, and the moving direction is determined by the rotation direction of each motor 60. Of course, each of these motors is independently driven, and each arm 7a-7b is movable independently.

  With the configuration of the main wafer transfer body 16 as described above, the arms 7a to 7b can be rotated in the θ direction and can be moved in the X, Y, and Z directions, and as described above, the processing unit units G1, G3, and G4. Can be accessed.

  Next, referring to FIG. 11 to FIG. 13, the pre-baking unit (PAB), the post-exposure baking unit (PEB), the post of the 10 stages belonging to the fourth processing unit G4 and the fifth processing unit G5. The baking unit (POST) will be described. Each of these baking units only differs in processing temperature.

  As shown in FIG. 11, such a heat treatment unit has a heat treatment device H on the front side of the system and a temperature control / conveyance device C on the back side in the housing 75. The heat treatment apparatus H is provided with a hot plate 86 that is heated by a heating wire 86b through a suitable heat insulating material in a cylindrical support 88. Below the support 88, three pins 85 for transferring the wafer W are installed so as to be moved up and down by the driving device 82, and these three pins 85 are through holes 86 a formed in the hot plate 86. It is buried and buried.

  On the other hand, the temperature control / conveyance device C is provided with sliders 79a and 79b that are movable along, for example, two guide rails 77 arranged along the X direction, and are attached to the sliders 79a and 79b, respectively. The temperature control / conveyance plate 71 is fixed via the connecting members 78, 78. Below the temperature control / conveying plate 71, lifting pins 84 for transferring the wafer W are installed so as to be lifted and lowered by a driving device. The temperature control / conveyance plate 71 is formed with a notch 71a so that the elevating pins 84 buried therebelow can be raised. As this temperature control mechanism, for example, cooling water or the like is used, and the temperature control is performed by adjusting the temperature of the wafer W to a predetermined temperature, for example, around 40 ° C. One slider 79a is provided with a drive device (not shown), for example, a drive device using air or a motor, and the other slider 79b is provided with a sensor (not shown) for recognizing the operation position.

  An air flow path 75c for air pressure control, which will be described later, is formed on the front side of the housing 75 (left side in the figure), and this flow path 75c is on the temperature control / conveyance device C side via a fan 87a. Communicating with Further, although not shown, the flow path 75c communicates in the vertical direction (Z direction) from the uppermost stage to the lowermost stage. Fans 87b are also installed on both side surfaces of the housing 75 on the heat treatment apparatus H side to form an exhaust port 75d, which is similarly connected from the uppermost stage to the lowermost stage.

  Further, for example, with respect to the fourth processing unit G4, the wafer W is transferred to and from the first main wafer transfer unit A1 on one side surface portion of the casing 75 on the temperature control / transfer apparatus C side. Therefore, an opening 75a is provided, and an opening 75b is provided on the other side surface so as to face the window 41a of the second main wafer transfer part A2. These opening portions 75a and 75b are provided with shutters 76a and 76b that can be opened and closed, respectively. The shutters 76 a and 76 b are opened and closed by a driving unit (not shown) under the central control unit 8.

  FIG. 13 is a side sectional view of the entire fourth processing unit part G4 (fifth processing unit part G5). As shown in the figure on both side portions on the heat treatment apparatus H side, the fourth processing unit part G4 ( Fifth processing unit part G5) In order to suppress heat diffusion to the outside and suppress an increase in the temperature of the atmosphere in the apparatus, a temperature control pipe 90 for circulating cooling water is provided from the uppermost stage to the lowermost stage, not shown. Is connected to a pump provided at a lower portion of the processing unit G4 (G5).

  Next, with reference to FIG. 14, the highly accurate temperature control unit (CPL) as a temperature control part which belongs to all the units of the heat processing system (3rd-5th process unit part G3-G5) is demonstrated. About this, since the temperature control / conveyance device C in the above-described pre-baking unit (PAB) or the like is replaced with the high-precision temperature control device C2 and there is no heat treatment device H, the pre-baking unit (PAB) The same reference numerals are given to the same components as in FIG.

  In the high-precision temperature control device C2, a high-precision temperature control plate 133 is provided in a cylindrical support 131. Although not shown in the figure, this high-precision temperature control plate 133 uses a Peltier element, for example, and adjusts the temperature of the wafer W to a predetermined temperature, for example, 23 ° C. by feedback control so that precise temperature control can be performed. Below the support 133, three elevating pins 85 for delivering the wafer W are installed so as to be elevable by the driving device 82, and these elevating pins 85 pass through the high-precision temperature control plate 133. It is buried in the hole 133a.

  Next, with reference to FIG. 15, the structure of the high temperature heat treatment unit (BAKE) belonging to the third processing unit part G3 will be described. Note that the same components as those in the pre-baking unit (PAB) and the like are denoted by the same reference numerals, and description thereof is omitted.

  A temperature control device C1 as a temperature control unit is disposed on the system front side in the housing 75, and the temperature control device C1 is provided with a temperature control plate 163 in a cylindrical support 161. The temperature control of the temperature control plate 163 is performed using, for example, cooling water as in the pre-baking unit (PAB). On the other hand, a thermal high-temperature heat treatment apparatus HH that performs heat treatment at a higher temperature than the heat treatment apparatus H in a pre-baking unit (PAB) or the like is disposed on the back side. As in the heat treatment apparatus H, the high temperature heat treatment apparatus HH has a cylindrical support member 88 provided with a high temperature hot plate 112 via a suitable heat insulating material. Below the support member 88, three pins 85 for transferring the wafer W are installed so as to be moved up and down by the driving device 82, and the three pins 85 penetrate through each hot plate 112. It is buried in the hole 112a.

  The distance between the temperature control device C1 and the high temperature heat treatment device HH is set larger than the distance between the temperature control / conveyance device C and the heat treatment device H in a pre-baking unit (PAB) or the like. This is to prevent the influence of the heat treatment due to the high temperature of the temperature heat treatment apparatus HH from adversely affecting the temperature adjustment process of the temperature adjustment apparatus C1.

  A guide rail 118 extends in the X direction on the side of the temperature control device C and the high temperature heat treatment device HH, and the wafer W is moved along the guide rail 118 so as to be movable by a driving device (not shown). A sub arm 115 is provided as a sub transport unit for transport. The sub arm 115 has a pair of hands 115a and 115a.

  Although the detailed configuration of the temperature control unit (TCP) belonging to the lower two stages of the fourth and fifth processing units G4 and G5 is not shown, it has the same configuration as the above-described high-precision temperature control unit (CPL). The temperature control mechanism of the temperature control unit (TCP) is controlled by using cooling water, a Peltier element, or the like. For example, the number of Peltier elements in this case is smaller than the number of Peltier elements of the high-precision temperature control plate 133.

  FIG. 16 shows a transition unit (TRS) belonging to the third processing unit section G3. Unlike other heat treatment units, this does not have a heat treatment system device (for example, temperature control device C1), and has only a lift pin 85 and a drive device that drives it up and down. Other components in the transition unit (TRS) are the same as those of the high-precision temperature control unit (CPL) and the like. The spare space belonging to the above-described third processing unit G3 is not shown, but as with the transition unit (TRS), the lift pins and the lift pins are moved up and down for the transfer of the wafer W to other processing units. There is only a driving device to drive.

  Next, the configuration of the resist coating unit (COT) shown in FIGS. 17 and 18 will be described.

  In this unit, a fan / filter unit F for air control, which will be described later, is attached above the casing 41 ′, and in the lower part, near the center of the unit bottom plate 151 smaller than the width in the Y direction of the casing 41 ′. An annular cup CP is disposed, and a spin chuck 142 is disposed inside thereof. The spin chuck 142 is configured to rotate by the rotational driving force of the drive motor 143 while the wafer W is fixedly held by vacuum suction. In the cup CP, pins 148 for transferring the wafer W are provided so as to be moved up and down by a driving device 147, and a drain port 145 for waste liquid is provided. A waste liquid pipe 141 is connected to the drain port, and the waste liquid pipe 141 communicates with a waste liquid port (not shown) below using a space N between the unit bottom plate 151 and the casing 41 ′. The waste liquid pipes 141a are respectively connected to a plurality of resist coating units (COT). Therefore, the waste liquid pipes 141a are arranged in a line as shown in the processing unit section.

  On the other hand, an air flow path for controlling atmospheric pressure described later is formed by a space L between the housing 41 'and the unit bottom plate on the opposite side (right side in FIG. 17). The fan / filter unit F of another resist coating unit (COT) in the lower stage of (COT) is visible.

  A nozzle 135 for supplying a resist to the wafer surface of the wafer W is connected to a liquid supply mechanism (not shown) in the chemical chamber (CHM) 26 (FIG. 2) via a supply pipe 134. The nozzle 135 is detachably attached to the tip of the nozzle scan arm 136 by a nozzle standby unit 146 disposed outside the cup CP, and is transferred to a predetermined resist discharge position set above the spin chuck 142. It is like that. The nozzle scan arm 136 is attached to the upper end of a vertical support member 149 that can move horizontally on a guide rail 144 laid in one direction (Y direction) on the unit bottom plate 151, and is not shown in the figure. Accordingly, the vertical support member 149 and the vertical support member 149 move together in the Y direction.

  The nozzle scan arm 136 is movable in the X direction perpendicular to the Y direction in order to selectively attach the nozzle 135 depending on the type of resist by the nozzle standby unit 146, and is also moved in the X direction by an X direction drive mechanism (not shown). It is supposed to be.

  Further, a drain cup 138 is provided between the cup CP and the nozzle standby unit 146, and the nozzle 135 is cleaned at this position prior to the supply of the resist to the wafer W.

  On the guide rail 144, not only the vertical support member 149 that supports the nozzle scan arm 136 described above, but also a vertical support member that supports the rinse nozzle scan arm 139 and is movable in the Y direction. A rinse nozzle 140 for side rinse is attached to the tip of the rinse nozzle scan arm 139. The rinse nozzle scan arm 139 and the rinse nozzle 140 are moved by the Y direction drive mechanism (not shown) to the nozzle standby position (solid line position) set to the side of the cup CP and the wafer W placed on the spin chuck 142. It moves in translation or linearly between the rinsing liquid discharge position (position of the dotted line) set right above the peripheral edge.

  Next, the configuration of the developing unit (DEV) shown in FIGS. 19 and 20 will be described. In this developing unit (DEV), the same components as those in the resist coating unit (COT) are denoted by the same reference numerals, and the description thereof is omitted.

  The nozzle 153 for supplying the developing solution to the wafer surface of the wafer W is slightly longer than the diameter of the wafer W, and a plurality of holes for discharging the developing solution are formed (not shown). A nozzle standby portion 154 is provided on the side of the cup CP, and is provided with a rinse nozzle 155 for supplying a rinse liquid for washing away the developer onto the surface of the wafer W. The rinse nozzle 155 has the same configuration as the nozzle 153. Further, in this nozzle standby unit 154, in order to discard the developer that has deteriorated by drying at the tip of the nozzle 135, a dummy dispense is performed periodically or as necessary.

  Although the nozzle scan arm 136 of the resist coating unit (COT) was movable in the X direction, the nozzle scan arm of the development unit (DEV) was only moved in the Y direction along the guide rail 144. Yes.

  Further, regarding the bottom coating unit (BARC), the coating liquid in the resist coating unit (COT) is merely replaced with the antireflection film material, and thus the description of the configuration is omitted here.

  Next, a series of operations of the substrate processing apparatus 1 described above will be described with reference to a flowchart shown in FIG.

  First, in the cassette station 10, the wafer transfer body 22 accesses the cassette CR containing the unprocessed wafer on the cassette mounting table 20, and takes out one semiconductor wafer W from the cassette CR (S1). When the semiconductor wafer W is taken out from the cassette CR, the wafer carrier 22 rotates 180 ° in the θ direction, and the shutter 76a (FIG. 11, FIG. 11) of the opening 75a of the temperature control unit (TCP) in the third processing unit G3. 12) opens, and the wafer W is inserted into the housing 75 through the opening 75a, and the wafer W is placed on the temperature control plate. Then, a predetermined temperature adjustment process (first temperature adjustment) is performed (S2).

  When the temperature adjustment process in the temperature adjustment unit (TCP) is completed, the opening 75b on the opposite side is opened, from which the upper arm 7a of the first main wafer transfer body 16 is inserted, and the wafer W is received by the arm 7a. Passed. Then, the main wafer transfer body 16 is rotated 90 ° counterclockwise in FIG. 4, the shutter 43 of the bottom coating unit (BARC) belonging to the first processing unit G1 is opened, and the upper arm 7a is inserted into the housing. Then, the wafer W is placed at a predetermined position, and an antireflection film is formed (S3). In this way, the wafer W is transferred from the temperature control processing unit to the coating processing unit (G1 and G2) only by the upper arm 7a, and the transfer after the heat treatment described later is performed by the middle arm 7b or the lower arm 7c. By doing so, the thermal effect on the wafer W can be minimized.

  When the predetermined coating process in the bottom coating unit (BARC) is completed, the shutter 43 is opened, the middle arm 7b (or the lower arm 7c) is inserted, and the wafer W is delivered, and the middle arm is returned to its original position (housing 41). Within). Then, the wafer W is transferred to the heating unit (HP) 113 and subjected to the first heating process (S4). This heating temperature is 120 ° C., for example.

  Next, in the high temperature heat treatment unit (BAKE) shown in FIG. 15, the shutter 76b is opened, the shutter 76 shown in FIG. 15 is opened, and the middle arm 7b of the first main wafer carrier A1 on which the wafer W is placed (or The lower arm 7c) moves in the Y direction to a position directly above the temperature control device C1, the lift pins 127 in the temperature control device C1 rise, and the wafer W is placed on the pins 127 at a position higher than the height of the sub arm 115. After this, the middle arm 7b is placed in the original position and the shutter 76 is closed. At this time, the sub arm 115 stands by in the vicinity of the center of the unit so as not to hinder the operation of the main wafer transfer body 16. Then, the waiting sub arm 115 moves onto the temperature control device C1. The lift pins 127 are lowered with the wafer W placed thereon, and the wafer W is transferred to the sub arm 115.

  The sub-arm 115 that has received the wafer W moves to the back side in the X direction, and is similarly placed on the hot plate 112 of the high-temperature heat treatment apparatus HH, which is the next process, by driving the elevating pins. A subsequent heat treatment is performed (S5). For example, the heat treatment is performed at 230 ° C. for a predetermined time.

  When the predetermined heat treatment is completed by the high temperature heat treatment apparatus HH, the wafer W is moved to the temperature adjustment apparatus C1 by the sub arm 115, and is placed on the temperature adjustment plate 163 via the lift pins 127 and adjusted to a predetermined temperature. (S6).

  Then, the wafer W is transferred from the high temperature heat treatment unit (BAKE) to the first main wafer transfer unit A1 by the first main wafer transfer body 16, and from here the high-precision temperature control unit belonging to the fourth processing unit unit G4. (CPL) is conveyed by the same operation. And predetermined | prescribed temperature control processing is performed at 23 degreeC here, for example (2nd temperature control) (S7).

  When the temperature adjustment process is completed, the shutter 43 shown in FIG. 17 is opened and transferred to the resist coating unit (COT) belonging to the first processing unit G1, and the resist solution coating process is performed (S8). .

  In this resist coating unit (COT), when the wafer W is transferred to a position directly above the cup CP, first, the pins 148 are raised and lowered after receiving the wafer W, and the wafer W is placed on the spin chuck 142. It is placed and vacuum-sucked. Then, the nozzle 135 that has been waiting in the nozzle standby portion moves to above the center position of the wafer W shown in FIG. 17 by the mechanism of the nozzle scan arm 136 and the guide rail 144. After a predetermined resist solution is applied to the center of the wafer W, the resist solution is applied by rotating the drive motor 143 at, for example, 100 rpm to 3000 rpm, and diffusing the resist solution over the entire surface of the wafer W by the centrifugal force. Complete.

  Subsequently, the shutter 76b of the pre-baking unit (PAB) in the fourth processing unit G4 is opened, and as shown in FIG. 22A, the middle arm 7b on which the wafer W is placed is temperature-controlled and transported in the Y direction. Then, as shown in FIG. 5B, the elevating pins 84 are raised, and after the wafer W is placed on the pins, the middle arm 7b is kept at the original position and the shutter 76b. Then, as shown in FIG. 5C, the elevating pins 84 are lowered and the wafer W is placed on the temperature control / transfer plate 71 (S9).

  Then, as shown in FIG. 23A, the temperature control / transfer plate 71 on which the wafer W is placed moves to the back side to a position directly above the hot plate 86, and then, as shown in FIG. After the temperature rises and the wafer W is placed on the pins, the temperature control / conveyance plate 71 is placed in the original position, and the pins 85 are lowered as shown in FIG. 86, and a predetermined second heat treatment (PAB) is performed (S10). As a result, the residual solvent is removed by evaporation from the coating film on the semiconductor wafer W.

  When the predetermined heat treatment is finished by the heat treatment apparatus H, an operation opposite to the operation shown in FIG. 23 is performed. That is, the wafer W is placed on the temperature control / transfer plate 71 from the hot plate 86 by the temperature control / transfer apparatus C and returned to the front side. At this time, the temperature adjustment / transfer apparatus C moves to the front side while adjusting the temperature of the heated wafer W to about 40 ° C. (while adjusting the temperature of the wafer W) (S11). As a result, the processing time from the heat treatment to the temperature adjustment treatment can be shortened, and the throughput can be improved.

  The wafer W is then taken out from the temperature control / transfer apparatus C by the second main wafer transfer body 17 in the reverse operation to that described with reference to FIG. 22, and then the window 38a of the door 38 shown in FIG. Passed to the film thickness inspection unit 119 and the peripheral exposure unit 120. Here, after a predetermined film thickness inspection and substrate peripheral exposure processing are performed (S12), the second main wafer transfer body 17 again causes the temperature control / transfer device C of the fifth processing unit G5 to move up and down pins 84. Then, the wafer is transferred from the interface unit 14 (S13) to the exposure apparatus (not shown) by the wafer transfer body 27 (S15). In this case, the wafer W may be temporarily stored in the buffer cassette BR before being transferred to the exposure apparatus. Then, a predetermined temperature adjustment process is performed by the high-precision temperature adjustment unit (CPL) 130 of the interface unit 14 (S14). The film thickness inspection is a unit that performs microscopic inspection with an inspection device instead of direct visual inspection. In addition to the film thickness inspection, for example, foreign matter inspection such as particles, surface inspection, and the like are also performed. In this regard, for example, all the wafers W may not be inspected but may be appropriately performed.

  When the exposure process is completed, the wafer W is again transferred to the post-exposure baking unit (PEB) belonging to the fifth processing unit G5 by the wafer transfer body 27 via the interface unit 14. Are transferred from the wafer transfer body 27 to the temperature adjustment / transfer apparatus C (S16), and transferred from the temperature adjustment / transfer apparatus C to the heat treatment apparatus H by the same operation as described in S9 to S11. Heat treatment is performed by the heat treatment apparatus H (third heating) (S17), and the temperature is adjusted and transferred to a predetermined temperature by the transfer apparatus C (S18), and the second main wafer transfer section A2 performs the second process. The wafer W is taken out by the main wafer carrier 17.

  Next, a predetermined temperature adjustment process is performed at, for example, 23 ° C. by the high-precision temperature adjustment unit (CPL) belonging to the fifth processing unit G5 (fourth temperature adjustment) (S19), and then the main wafer transfer body 17 The developer is transported to the developing unit (DEV) belonging to the second processing unit G2, and the developer coating process is performed (S20).

  In the developing unit (DEV), when the wafer W is transferred to a position directly above the cup CP, first, the pins 148 are raised and lowered after receiving the wafer W, and the wafer W is placed on the spin chuck 142. It is placed and vacuum-adsorbed. Then, the nozzle 135 that has been waiting in the nozzle standby portion moves to above the peripheral position of the wafer W by the mechanism of the nozzle scan arm 136 and the guide rail 144. Subsequently, the wafer W is rotated by, for example, 10 rpm to 100 rpm by the drive motor 143, and a predetermined developer is applied by the centrifugal force of rotation while the nozzle 135 moves in the Y direction from the periphery of the wafer W.

  Next, the wafer is transferred to the post-baking unit (POST) belonging to the fourth processing unit G4. In this case, the main wafer transfer body is also operated by the same operations as described in S9 to S11 and S16 to S18. 17 is transported from the temperature control / conveyance device C to the heat treatment device H, and is heated by the heat treatment device H (fourth heating) (S22). The wafer W is transferred by the transfer apparatus C while being adjusted to a predetermined temperature, for example, 40 ° C. (S23), and this time, the wafer W is taken out by the first main wafer transfer body 16 in the first main wafer transfer section A1. For example, the heat treatment is performed at 100 ° C. for a predetermined time. Thereby, the resist swollen by the development is cured, and the chemical resistance is improved.

  Then, the wafer W is returned to the cassette CR of the cassette station 10 by the main wafer transfer body 16 through the spare space in the third processing unit G3 and the wafer transfer 22 (S24). Here, before returning to the cassette CR of the cassette station 10, the processing unevenness or the like on the wafer substrate W may be macroscopically inspected with the naked eye by a macro inspector (not shown) provided on the back side of the cassette station 10. is there. In addition to the macro inspection, for example, inspection of pattern defects after development, line width, overlay / overlay accuracy, and the like may be performed. Such a macro inspection device may be externally attached so as to protrude to the back side of the cassette station 10 or may be arranged in the cassette station 10.

  As described above, immediately after the first heating (S5), the second heating (S10), the third heating (S17), and the fourth heating (S22), the temperature is controlled while being conveyed by the temperature adjustment / conveying device C. -Since the temperature is adjusted, the temperature adjustment processing time by the second temperature adjustment (S7), the third temperature adjustment (S14), and the fourth temperature adjustment (S19), which are the subsequent processes, can be shortened, and the throughput is improved. To do.

  Further, each of the heat treatment unit parts G3 to G5 is composed of 10 stages, and each of the coating process unit parts G1 and G2 is composed of 5 stages, and each of these process unit parts G1 to G5 is composed of a first main wafer transfer part A1, 21. The main wafer transfer unit A2 is disposed so as to surround the main wafer transfer unit A2, so that a large number of substrates can be processed quickly, and each main wafer transfer unit 16 and 17 can efficiently access each processing unit, and throughput can be improved. Contributes to improvement.

  Further, by performing the heat treatment from the main wafer transfer bodies 16 and 17 by the heat treatment apparatus H via the temperature adjustment / transfer apparatus C, that is, before performing the heat treatment, the temperature adjustment / transfer apparatus C must always Since the temperature is maintained at a predetermined temperature, there is no difference in the processing state even if the heat treatment time is constant, and the thermal history of the wafer W in the entire substrate processing can be constant.

  Further, as shown in FIG. 1, temperature control devices C1, C2, C2 are provided between the heating devices H, HH, etc. in the heat treatment system processing units G3 to G5 and the coating system processing units G1 and G2. Therefore, it is possible to minimize the thermal influence of the heating devices H and HH on the coating processing units G1 and G2.

  On the other hand, since the main wafer transfer units A1 and A2 and the processing units G1 to G5 are surrounded by the surrounding members 44 and 44 ', particles to the processing units and the transfer units are formed. Can be prevented from entering.

  Further, as shown in FIG. 4, each of the surrounding members 44 and 44 ′ provides a gap u between the surrounding members 44 of the first and second main wafer transfer portions A1 and A2 and each processing unit. Thus, vibration due to the transfer of the main transfer wafer transfer portions A1 and A2 is not transmitted to each processing unit, and each heat treatment and each coating process can be performed reliably.

  Next, the atmospheric pressure and temperature / humidity control of the substrate processing apparatus 1 will be described with reference to FIGS.

  24, air supply chambers 10a, 12a, and 14a are provided above the cassette station 10, the processing station 12, and the interface unit 14, and a filter with a dustproof function, for example, ULPA is provided on the lower surface of the air supply chambers 10a, 12a, and 14a. Filters 101, 102, and 103 are attached. Air that is cleaner than the ULPA filters 101, 102, and 103 in each air supply chamber is supplied to each of the units 10, 12, and 14 in a downflow, and the air is supplied from these air supply chambers to each processing unit as shown in FIGS. It is designed to flow. The downflow air is supplied in the direction of the arrow (upward) from the ducts 31 and 32 described above. In each of the first and second processing unit parts G1 and G2, each fan provided on the back side is provided. 106 is exhausted from the exhaust duct 100 (see FIG. 24) to the lower exhaust port 125, and in the third to fifth processing unit portions G3 to G5, the flow path 75b and the fans 87a and 87b (FIG. 11). ) Is exhausted from the exhaust port 75d to the lower exhaust port 125. Further, as shown in FIG. 26, in the first and second main wafer transfer sections A1 and A2, the air is exhausted from the lower exhaust port 125 through each fan 36, and the peripheral exposure apparatus 120 and the window 38a of the door 38 are further exhausted. The air is exhausted to the inspection unit portion 119 and exhausted to the exhaust port 125. The rotation speeds of the fans 106, 87a, 87b, 36 are all controlled by the control unit 8 individually for each unit.

  Further, in each of the units of the coating system unit (G1, G2), a fan / filter unit F is mounted above them, and sensors S for measuring atmospheric pressure, temperature and humidity are provided. The fan / filter unit F includes, for example, a ULPA filter and a small fan. On the other hand, the same sensor S is provided in each of the third to fifth processing unit parts G3 to G5 and each unit, and the sensor S is also provided in the first and second main wafer transfer parts A1 and A2. . In each of the sensors S described above, the detection result is taken into the control unit 8.

  With the above configuration, for the atmospheric pressure control, the atmospheric pressure in the first and second processing unit units G1 and G2 is changed to the first and second main wafer transfer units A1 and A2, and the third to fifth processing unit units G3. For example, the pressure is controlled to be higher by 0.3 (Pa) to 0.4 (Pa) than the atmospheric pressure in G5. In this way, by controlling the pressure in the coating system units G1 and G2 to be higher than the pressure in the heat treatment system and the transport system, that is, by controlling the positive pressure, the coating system that requires the most particle restriction is used. The coating process in the unit can be performed reliably and with high accuracy.

  Also, with the above configuration, the pressure, temperature, and humidity in each unit in the first to fifth processing unit units G1 to G5 and the first and second main wafer transfer units A1 and A2 are individually PID controlled. Therefore, each process can be performed in an optimum environment suitable for the process of each unit.

  Further, in FIG. 4, during maintenance of the first or second main wafer transfer unit A1 or A2, when the door 38 is opened, all the units G1 to G5 and all the main transfer units A1 are based on a command from the control unit 8. And the amount of clean air supplied in A2 is increased to further increase the atmospheric pressure. Thereby, particles generated during maintenance can be suppressed. Further, in addition to the atmospheric pressure control, the atmospheric pressure in the entire system (substrate processing apparatus 1) may be increased when the rear panel 40 is removed or opened and closed in FIG. In such a case, a fan that operates only during maintenance may be provided separately to increase the atmospheric pressure in the entire system (substrate processing apparatus 1).

  Further, as shown in FIG. 1, temperature control devices C1, C2, C2 are provided between the heating devices H, HH, etc. in the heat treatment system processing units G3 to G5 and the coating system processing units G1 and G2. Therefore, it is possible to minimize the thermal influence of the heating devices H and HH on the coating processing units G1 and G2. Therefore, temperature control in each coating system processing unit G1 and G2 can be performed precisely.

  In the substrate processing apparatus 1, as shown in FIG. 27, when one window 75a is opened by the shutter 76a in each of the units G3 to G5 of the heat treatment system, the other window 75b is the shutter 76b. The opening / closing control is performed so as to be closed. As a result, each unit functions like a load lock chamber, effectively shuts off the environment on both sides over each unit, and can maintain a favorable processing environment in each unit.

  Furthermore, in the substrate processing apparatus 1, as shown in FIG. 28, when the opening 97 of each unit in each unit part G1, G2 of the liquid supply system is opened by the shutter 43, the heat treatment on both sides of this unit part. Opening and closing control is performed so that the windows 75a and 75b of the units in the unit units G3 to G5 of the system are closed by the shutters 76a and 76b. This prevents an atmosphere that adversely affects processing from flowing from the liquid supply system unit to the heat treatment system unit.

  Furthermore, this system can also control the temperature of the liquid supply devices 58 and 59 in the chemical chambers (CHM) 26 and 27. Thereby, the temperature of the processing liquid supplied to the coating processing units G1 and G2 is maintained in a suitable state. It is also possible to substitute a chamber used as a coating processing unit for a chemical chamber.

  FIG. 29 shows a heat treatment unit according to the second embodiment of the present invention, and the description of the same elements as those in FIGS. 11 and 12 is omitted.

  In this heat treatment unit G3 ′, a temperature control device C1 ′, a low temperature heat treatment device LH, and a high temperature heat treatment device HH are arranged in a linear manner in the housing 75 in order from the front side (left side in the figure). Yes. These heat treatment apparatuses LH and HH are different only in the heating temperature, and these structures are the same as the heat treatment apparatus H of the first embodiment, and the low temperature heat treatment is performed on the cylindrical support member 88 via an appropriate heat insulating material. The apparatus LH is provided with a low temperature hot plate 111, and the high temperature heat treatment apparatus HH is provided with a high temperature hot plate 112. Below the support member 88, three pins 85 for transferring the wafer W are installed so as to be moved up and down by the driving device 82, and these three pins 85 are formed on the hot plates 111 and 112, respectively. The through holes 111a and 112a are buried and disposed. On the other hand, the temperature control device C1 ′ is the same as the temperature control device in the temperature control unit (COL) of the first embodiment, for example, and uses a Peltier element or cooling water as the temperature control mechanism.

  A guide rail 118 extends in the X direction on the side of the temperature control device C1 ′, the low temperature heat treatment device LH, and the high temperature heat treatment device HH, and is moved along the guide rail 118 by a driving device (not shown). A sub arm 115 is provided as possible. The sub arm 115 has a pair of hands 115a and 115a.

  The heat treatment unit G3 ′ is arranged in the same manner as the arrangement of the processing unit parts G3 to G5 in the first embodiment. In this case, the panel 40 on the back side of the processing station 12 in FIG. 1 is moved to the back side and arranged in accordance with the dimensions of the heat treatment unit G3 ′.

  Regarding the action of the heat treatment unit G3 ′, the shutter 76 is opened, and the middle arm 7b (or the lower arm 7c) of the first or second main wafer transfer body A1 or A2 is positioned directly above the temperature control device C1 ′ in the Y direction. And the elevating pins 127 in the temperature control device C1 ′ are raised, and the wafer W is placed on the pins 127 at a position higher than the height of the sub-arm 115, and then the middle stage arm 7b is kept at the original position. The shutter 76 is closed. At this time, the sub arm 115 is located on the low temperature heat treatment apparatus LH side so as not to hinder the operation of the main wafer transfer body 16. Then, the sub arm 115 located on the low temperature heat treatment apparatus LH side moves onto the temperature adjustment apparatus C1 ′. The lift pins 127 are lowered with the wafer W placed thereon, and the wafer W is transferred to the sub arm 115.

  Then, the sub arm 115 that has received the wafer W moves to the back side in the X direction, and similarly, by driving the lifting pins, the low temperature heat treatment apparatus LH that is the next process and the high temperature heat treatment apparatus HH that is the next process. The plates are sequentially placed on the hot plates 111 and 112 and subjected to predetermined heat treatment.

  When the predetermined heat treatment is completed by the high temperature heat treatment apparatus HH, the wafer W is moved to the temperature adjustment apparatus C1 ′ by the sub arm 115 and placed on the temperature adjustment plate 122 to perform the predetermined temperature adjustment process.

  In the present embodiment, in particular, heat treatments with different temperatures and further temperature control can be performed continuously, and throughput can be improved.

  If the temperature control device C1 ′, the low temperature heat treatment device LH, and the high temperature heat treatment device HH are appropriately partitioned by a shielding plate, temperature control in each device can be performed more precisely.

  FIG. 30 shows a substrate processing apparatus according to a third embodiment of the present invention. This substrate processing apparatus 150 is further modified by applying a coating system by changing the second main wafer transfer portion A2 in the first embodiment. The processing unit G2 ′ is added, and the other configuration is the same as that of the first embodiment. The processing unit G2 ′ has a resist coating unit (COT) and a developing unit (DEV).

  In the main wafer transfer unit A1 (A2) according to the first embodiment, the main wafer transfer body 16 (17) itself did not move in the Y direction. However, the third main wafer transfer unit according to the third embodiment A3 is provided with a Y-axis pole 128 so that it can also move in the Y direction. The Y-axis pole 128 is movable along the vertical pole 33, and the main wafer transfer body 17 is attached so as to be movable along the Y-axis pole.

  Thereby, after the substrate is processed in the fourth and fifth heat treatment units G4 and G5, the substrate that cannot be processed in the processing units G1 and G2 of the first and second coating systems is transferred to the third third processing unit. The main wafer transfer body 17 by the 3 main wafer transfer units A3 can transfer to the processing unit G2 ′ to perform a predetermined coating process. This improves the throughput.

  Next, a fourth embodiment of the present invention will be described with reference to FIGS. FIGS. 31 to 34 are views showing a coating and developing treatment system according to an embodiment of the present invention, FIG. 31 is a plan view, and FIG. 32 is a front view. FIG. 33 is a cross-sectional view taken along the X direction in FIG. 31, and FIG. 34 is a cross-sectional view taken along a region where the temperature adjustment processing unit 218 is arranged along the Y direction in FIG.

  As shown in FIG. 31, this coating / developing system 201 carries, for example, 25 wafers W in the cassette unit from outside to the coating / developing system 201, and carries wafers W in / from the cassette C. Cassette station 202, a first processing station 203 in which various single-wafer processing units for performing predetermined processing on the wafer W in the coating and developing processing step are arranged in multiple stages, and the first processing Between a second processing station 204 having a configuration similar to that of the first station arranged adjacent to the station and an exposure apparatus (not shown) arranged adjacent to the second processing station 204. An interface unit 205 for transferring the wafer W is integrally connected. In the first processing station 203, an antireflection film and a resist film are mainly applied on the wafer W, and in the second processing station 204, the exposed resist film is developed.

  In the cassette station 202, a plurality of cassettes C are aligned in the X direction (vertical direction in FIG. 31) at the position of the positioning protrusion 210a on the cassette mounting table 210 with the entrance / exit of the wafer W directed toward the processing station 203. It can be freely mounted on. A wafer transfer body 211 that can move in the arrangement direction (X direction) of the cassette C and the arrangement direction (Z direction; vertical direction) of the wafers W accommodated in the cassette C is movable along the transfer path 212. Each cassette C can be selectively accessed.

  The wafer transfer body 211 is configured to be rotatable in the θ direction as well, and each first heating of the first heating / temperature adjustment processing unit group 214a as a second processing unit group in the first processing station 203 described later. -It is comprised so that it can access with respect to the temperature control processing unit (CPL) 218a of the temperature control processing unit 210a.

  As shown in FIGS. 31 and 32, in the first processing station 203, an antireflection film coating unit (BARC) group 213a and a resist film coating unit ( CT) group 213b is provided. The antireflection film coating unit (BARC) group 213a is configured by stacking antireflection film coating units (BARC) 216 that perform coating processing on the wafer W near normal temperature in three stages in the Z-axis direction. The resist film coating unit (CT) group 213b is configured by stacking resist film coating units (CT) 217 that perform coating processing on the wafer W in the vicinity of normal temperature in three stages in the Z-axis direction.

  In the center of the first processing station 203, a first heating / temperature adjustment processing unit group 214a and a second heating / temperature adjustment processing unit group 214b are arranged as a second processing unit group with the transfer device 219a interposed therebetween. ing. In the first heating / temperature adjustment processing unit group 214a, the first heating / temperature adjustment processing unit 210a is configured to be stacked in eight stages in the Z-axis direction, and in the second heating / temperature adjustment processing unit group 214b, the second heating / temperature adjustment processing unit group 214b is configured. The adjustment processing units 210b are stacked in seven stages in the Z-axis direction, and further, a transport unit (STL) described later is disposed below them. Each of the first and second heating / temperature adjustment processing units 210a and 210b includes a temperature adjustment processing unit (CPL) 218a and 218b that performs a temperature adjustment process on the wafer W, and a heating processing unit (HP) 220a that performs a heating process. 220b are adjacent to each other and integrated.

  As shown in FIGS. 31 and 33, the first heating / temperature adjustment processing unit group 214a is configured by stacking, for example, eight stages of the first heating / temperature adjustment processing units 210a, and all the first heating / temperature adjustment processing units 210a are arranged. In the processing unit 210a, the first heating / temperature control processing unit group 214a and the antireflection film coating unit (BARC) group are arranged so that the temperature control processing unit (CPL) 218a is positioned on the antireflection film coating unit (BARC) group 213a side. 213a is arranged. FIG. 33 is a cross-sectional view taken along the X direction of FIG. 31, and shows the positional relationship between the first processing unit group 213a and the second processing unit group 214a along the X direction. It is. Similarly, the second heating / temperature adjustment processing unit group 214b is configured by stacking the second heating / temperature adjustment processing units 210b in multiple stages, and the temperature adjustment processing is performed in all the second heating / temperature adjustment processing units 210b. The unit 218b is disposed on the resist film coating unit (CT) group 213b side.

  Around the vertical transfer type transfer device 219a, an antireflection film coating unit (BARC) group 213a, a resist film coating unit (CT) group 213b, and first and second heating / temperature adjustment processing unit groups 214a and 214b are arranged. Has been. Then, transfer of the wafer W between the first heating / temperature adjustment processing unit group 214a and the antireflection film application unit (BARC) group 213a, the second heating / temperature adjustment processing unit group 214b, and the resist film application unit (CT) ) The wafer W is transferred to and from the group 213b by the transfer device 219a. In addition, shutter members 247a and 247b that can be opened and closed are provided on both side surfaces of the temperature adjustment processing unit (CPL) 218a of the first heating / temperature adjustment processing unit 210a. The transfer of the substrate between the first heating / temperature adjustment processing unit 210a and the wafer transfer body 211 and the transfer of the substrate between the first heating / temperature adjustment processing unit 210a and the transfer device 219a are respectively performed by a shutter 247a, Via 247b. In addition, an openable / closable shutter member 247a is provided on the side surface of the second heating / temperature adjustment processing unit 210b on the side of the conveyance device of the temperature adjustment processing unit (CPL) 218b, and the conveyance device 219a is provided via the shutter member 247a. And the substrate are transferred between the temperature control unit (CPL) 218b.

  On the other hand, in the second processing station 204, as shown in FIGS. 31 and 32, as in the first processing station 203, the first processing unit that performs liquid processing on the wafer W near the normal temperature on the front side. A first development processing unit group 213c and a second development processing unit group 213d are arranged as a group. The first development processing unit group 213c is configured by stacking development processing units (DEV) 226 in two stages in the Z-axis direction, and the second development processing unit group 213d is similarly configured with the development processing unit (DEV) 226 in the Z-axis direction. Are stacked in two stages.

  In the center of the second processing station 204, a third heating / temperature adjustment processing unit group 214c and a fourth heating / temperature adjustment processing unit group 214d are arranged as a second processing unit group with the transfer device 219b interposed therebetween. ing. In the third heating / temperature adjustment processing unit group 214c, the third heating / temperature adjustment processing units 210c are stacked in seven stages in the Z-axis direction, and further, a transport unit (STL) to be described later is disposed below them. . The fourth heating / temperature adjustment processing unit group 214d is configured by stacking the fourth heating / temperature adjustment processing units 210d in eight stages in the Z-axis direction.

  Each of the third and fourth heating / temperature regulation processing units 210c and 210d includes a temperature regulation processing unit (CPL) 218c and 218d that performs a temperature regulation process on the wafer W, and a heat treatment unit (HP) 220c that performs a heating process. 220d are adjacent to each other and integrated. Then, as shown in FIG. 31, the temperature adjustment processing unit (CPL) 218c among the temperature adjustment processing units (CPL) 218c and the heat treatment units (HP) 220c of all the third heating / temperature adjustment processing units 210c stacked. However, the third heating / temperature adjustment processing unit group 214c and the first development processing unit (DEV) group 213c are arranged so as to be positioned on the first development processing unit (DEV) group 213c side. Also, the temperature adjustment processing unit (CPL) 218d among the temperature adjustment processing units (CPL) 218d and the heat treatment units (HP) 220d of all the fourth heating / temperature adjustment processing units 210d stacked is the second development processing unit. A fourth heating / temperature adjustment processing unit group 214d and a second development processing unit (DEV) group 214d are arranged so as to be positioned on the (DEV) group 213d side.

  Around the vertical conveyance type conveyance device 219b, a first development processing unit group 213c, a second development processing unit group 213d, and third and fourth heating / temperature adjustment processing unit groups 214c and 214d are arranged. Then, the transfer of the wafer W between the third heating / temperature adjustment processing unit group 14c and the first development processing unit (DEV) group 213c, the fourth heating / temperature adjustment processing unit group 214d and the second development processing unit ( The wafer W is transferred to and from the DEV) group 213b by the transfer device 219b. Further, shutter members 247a and 247b that can be opened and closed are provided on both side surfaces of the temperature adjustment processing unit (CPL) 218d of the fourth heating / temperature adjustment processing unit 210d. The transfer of the substrate between the fourth heating / temperature adjustment processing unit 210d and the transfer device 219b and the transfer of the substrate between the fourth heating / temperature adjustment processing unit 210d and the wafer transfer body 237 are respectively performed by the shutter 247a, Via 247b. Further, an openable / closable shutter member 247b is provided on the side surface of the temperature adjustment processing unit 218b of the third heating / temperature adjustment processing unit 210c on the side of the conveyance device, and the temperature adjustment with the conveyance device 219b via the shutter member 247b. The substrate is transferred to and from the processing unit 218c.

  In addition, as shown in FIG. 31, a chemical tower 215 used in the inspection machine 206 and the first processing unit group 213a is stored on the back side of the first processing station 203 and the second processing station 204. A container shelf is provided. This container shelf is movable along the Y direction of the drawing by rails 207. The container shelf has a structure like a door that can be opened and closed on the back side, for example, and the container can be accommodated in the door. Thereby, replacement | exchange and maintenance inspection of a container can be performed easily. The inspection machine 206 inspects the film thickness of the coating film of the wafer W that has undergone exposure and development processing, and is installed as necessary. Further, as the processing liquid, for example, the antireflection film resist material supplied to the antireflection film coating unit (BARC) 216, the resist film material supplied to the resist film coating unit (CT) 217, and the development processing unit 226 are supplied. There is a developer. Here, the processing liquid stored in the chemical tower 215 arranged on the back side may be used as a main processing liquid source, or the chemical tower 215 arranged on the back side is arranged as a spare, and in other areas. You may arrange | position and use another chemical tower as a main process liquid source.

  In the interface unit 205, for example, a buffer cassette 233 having a structure similar to that of the wafer W cassette C, which temporarily holds the wafer W before exposure, is disposed on the front side thereof, and a peripheral exposure device 234 is disposed on the back side thereof. . The wafer transfer body 237 that is vertically movable and further rotatable in the θ direction is movable along the transfer path 236 between the buffer cassette 233 and the peripheral exposure apparatus 234. The wafer carrier 237 is configured to be accessible to the temperature adjustment processing unit (CPL) 218d of the fourth heating / temperature adjustment processing unit 210d, the buffer cassette 233 and the peripheral exposure device 234, and the pre-exposure temperature adjustment unit (not shown). Has been.

  Further, in this coating and developing processing system 201, as shown in FIGS. 31 and 33, the first processing unit group 213 (antireflection film coating unit (BARC) group 213a, resist film coating unit) in the first processing station 203 is used. (CT) group 213b) and second processing unit group 214 (first and second heating / temperature control processing unit groups 214a, 214b), the first processing unit group 213 (second processing station 204). Between the first and second development processing unit groups 213c and 213d) and the second processing unit group 214 (third and fourth heating / temperature adjustment processing unit groups 214c and 214d), respectively, a heat insulating wall 239 and a later-described one are provided. A passage 240 for circulating the gas exhausted from the lower part of the first processing unit group 213 to the upper part thereof is arranged. That is, the heat insulating wall 239 and the passage 240 are arranged so as to divide between the first processing unit group 213 and the second processing unit group 214.

  As shown in FIG. 32, in the above-described antireflection film coating unit (BARC) group 213a, an antireflection film is applied by placing the wafer W on a spin chuck in a cup and applying the antireflection film to the wafer W. Antireflection film coating units (BARC) 216 for processing are stacked in three stages.

  In the resist coating unit group 213b, resist coating units (CT) for applying a resist coating process to the wafer W by placing the wafer W on a spin chuck in the cup and applying a resist solution are stacked in three stages. .

  In the first development processing unit group 213c, a development processing unit (DEV) 226 that performs development processing on the wafer W by placing the wafer W on the spin chuck in the cup and supplying the developer is arranged in two stages from the top. Are stacked.

  Similarly, in the second development processing unit group 213d, a development processing unit (DEV) 226 that places the wafer W on the spin chuck in the cup and supplies the developer to perform development processing on the wafer W is provided from above. It is stacked in two stages.

  In the second and third heating / temperature adjustment processing unit groups 214b and 214c, the heating / temperature adjustment processing units 210 are stacked in seven stages, and a transport unit (STL) 238b is further provided below these units as shown in FIG. 238c are respectively arranged. The transfer of the wafer W between the first and second processing stations 203 and 204 is performed via a communication path 242 that connects the two transfer units (STL) 238b and 238c. As shown in FIG. 34, the transport units (STL) 238b and 238c are each provided with an opening, and shutter members 248a, 248b, 249a, and 249b that can be opened and closed are provided corresponding to the openings. Then, the wafer W is transferred between the transfer units (STL) 238b and 238c and the transfer devices 219a and 219b corresponding to the shutter units 248a and 249b, respectively. Also, by opening and closing the shutter members 248b and 249a, the wafer W is transferred between the transfer units (STL) 238b and 238c via the communication path 242, that is, the wafer W is transferred between the first and second stations. Done.

  Next, the above-described transport devices 219a and 219b will be described with reference to FIG. 35 which is a perspective view. The above-described transfer devices 219a and 219b have the same structure, and will be described as reference numeral 219 in FIG.

  As shown in FIG. 35, the conveying device 219 moves up and down in the vertical direction (Z direction) inside a cylindrical support body 253 composed of integral wall portions 251 and 252 that are connected to each other at the upper end and the lower end. A flexible wafer W transfer means 254 is provided. The cylindrical support 253 is connected to the rotation shaft of the motor 255, and rotates together with the wafer W transfer means 254 around the rotation shaft by the rotation driving force of the motor 255. Therefore, the wafer W transfer means 254 is rotatable in the θ direction.

  On the transfer base 256 of the wafer W transfer means 254, a plurality of, for example, two tweezers 257 and 258 for holding the wafer W are provided vertically. Each of the tweezers 257 and 258 has basically the same configuration, and has a form and a size that can pass through a side opening between both wall portions 251 and 52 of the cylindrical support 253. Further, the tweezers 257 and 258 can be moved in the front-rear direction by a motor (not shown) built in the transport base 256.

  Next, the structure of the above-described first heating / temperature adjustment processing unit 210a will be described with reference to FIGS. 34, 36, and 37. FIG. 36 is a plan view of the heating / temperature adjustment processing unit, and FIG. 37 is a cross-sectional view of the heating / temperature adjustment processing unit.

  As shown in FIGS. 36 and 37, the first heating / temperature adjustment processing unit 210 a includes a heating processing unit (HP) 220 a that performs a heating process on the wafer W and a temperature adjustment process that performs a temperature adjustment process on the wafer W. A unit (CPL) 218a is integrated adjacent to each other.

  The heat treatment unit (HP) 220a has a hot plate 224 that can be set to a temperature of about 200 ° C. Further, the heat treatment unit (HP) 220a surrounds the wafer W around the heat shutter 224 and the gate shutter 221 for opening and closing between the heat treatment unit (HP) 220a and the temperature adjustment processing unit (CPL) 218a. And a ring shutter 222 that is moved up and down together with the gate shutter 221. On the heating plate 224, three lift pins 223 for placing the wafer W and raising and lowering it are provided so as to be raised and lowered. A shielding plate screen may be provided between the hot plate 223 and the ring shutter 222. Below the heat treatment chamber 220a, an elevating mechanism 227 for elevating the three lift pins 223 and an elevating mechanism 228 for elevating the ring shutter 222 together with the gate shutter 221 are provided. On the hot plate 223, a proximity pin 235 having a height of 0.2 mm and a guide guide 232 are provided.

  The temperature adjustment processing unit (CPL) 218a has a temperature adjustment plate 225 that adjusts the temperature of the wafer W to a room temperature of about 23 ° C. As shown in FIGS. 34 and 36, the side of the temperature adjustment processing unit (CPL) 218a on the cassette station side has an opening for transferring the wafer W to and from the cassette station 2, and this opening A shutter member 247a that can be opened and closed corresponding to the portion is disposed. Furthermore, an opening for transferring the wafer W to and from the transfer device 219 is provided on the side of the temperature control processing unit (CPL) 218a on the transfer device 219 side, and can be opened and closed corresponding to this opening. A simple shutter member 247b is disposed.

  As shown in FIG. 37, the heat processing unit (HP) 220a and the temperature adjustment processing unit (CPL) 218a are communicated with each other through a communication port 230, and a temperature for controlling the temperature by placing the wafer W thereon. The adjusting plate 225 is configured to be movable in the horizontal direction along the guide plate 259 by the moving mechanism 260. Thereby, the temperature control plate 225 can enter the heat treatment unit (HP) 220a through the communication port 230, and the wafer W after being heated by the heat plate 224 in the heat treatment unit (HP) 220a. Is received from the lift pins 223 and carried into the temperature adjustment processing unit (CPL) 218a to adjust the temperature of the wafer W.

  Although the first heating / temperature adjustment processing unit 210a has been described above, the fourth heating / temperature adjustment processing unit 210d of the fourth heating / temperature adjustment processing unit group 214d has the same structure. Further, the second heating / temperature adjustment processing unit 210b and the third heating / temperature adjustment processing unit 210c have substantially the same structure as the first heating / temperature adjustment processing unit 210a, but FIG. 31 and FIG. As shown in FIG. 4, the first heating / temperature adjustment processing unit 210a is provided with shutter members 247a, 247b on both side surfaces, whereas the second and third heating / temperature adjustment processing units 210b, 210c have a transfer device 219. The only difference is that the shutter member 247a or 247b is provided only on the side surface. In the present embodiment, the temperature adjustment processing units (CPL) 218a and 218d are driven to open and close so that both the sitter members 247a and 247b are not opened. That is, the opening is closed by the shutter member 247b in the state opened by the shutter member 247a, and conversely, the opening is closed by the shutter member 247a in the state opened by the shutter member 247b. By controlling the opening / closing drive of the shutter members 247a and 247b in this way, the temperature adjustment processing unit (CPL) performs a function like a load lock chamber, and performs processing on the wafer W near room temperature. The temperature control in the treatment liquid supply unit (BARC, CT, DEV) can be performed more precisely.

  As described above, in the present embodiment, the heat insulating wall 239 and the first processing are respectively provided between the first processing unit groups 213a, 213b, 213c, and 213d and the second processing unit groups 214a, 214b, 214c, and 214d. A temperature control mechanism is provided in which a passage 240 for circulating the gas exhausted from the lower part of the unit group 213 to the upper part thereof is arranged. This temperature control mechanism will be described below with reference to FIG. FIG. 38 is a schematic cross-sectional view of a first processing unit group 213a in which a plurality of processing liquid supply units, here antireflection film coating units (BARC) 216, are stacked.

  As shown in FIG. 38, the upper part of the coating and developing treatment system 201 is temperature-controlled from the upper part with respect to the antireflection film coating unit (BARC) group 213a as the first processing unit group in the first processing station 203. A clean air supply unit 241 for supplying clean air is disposed. The clean air supply unit 241 includes an FFU (fan filter unit) and a temperature control device that adjusts temperature and humidity, and the gas exhausted from the lower part of the antireflection film coating unit (BARC) group 213a is placed on the upper part. Clean air from which particles and the like have been removed by adjusting temperature and humidity from the gas flowing in through the passage 240 for circulation is supplied to each antireflection film coating unit (BARC) 216 through the passage 243. Further, as shown in FIG. 31, a stepped heat wall 239 is disposed between the passage 240 and the heating / temperature adjustment processing unit 210a as the second processing unit group. In the present embodiment, by providing the heat insulating wall and the temperature control mechanism in this way, the temperature control in the processing liquid supply unit (BARC, CT, DEV) for processing the wafer W near room temperature is further precise. Can be done. Similarly, as shown in FIG. 31, the clean air supply unit 240 is also provided between the first processing unit groups 213b, 213c, and 213d and the corresponding heating / temperature control processing unit groups 214b, 214c, and 214d. A heat insulating wall 239 is provided separately.

  Next, processing steps in the coating and developing processing system 201 configured as described above will be described.

  In the coating and developing processing system 201, the unprocessed wafer W accommodated in the cassette C is taken out by the wafer transfer body 211 of the cassette station 202, and then the first heating / temperature control heat treatment unit 210a of the first processing station 203. The temperature adjustment processing unit (CPL) 218a is transported and placed on the temperature adjustment plate 225 for temperature adjustment processing.

  The wafer W that has been subjected to the temperature adjustment processing in the temperature adjustment processing unit (CPL) 218a is transferred into the antireflection film application unit (BARC) 216 in the antireflection film application unit (BARC) group 213a by the transfer device 219a. A treatment liquid for an antireflection film is applied.

  The wafer W coated with the antireflection film processing liquid by the antireflection film coating unit (BARC) 216 is transferred into the temperature adjustment processing unit (CPL) 218a of the first heating / temperature adjustment processing unit 210a by the transfer device 219a. And placed on the temperature control plate 225. As shown in FIG. 37, the wafer W placed on the temperature adjustment plate 225 passes through the communication port 230 into the heat treatment unit (HP) 220a by the temperature adjustment plate 225 horizontally moved by the moving mechanism 260. Be transported. The transferred wafer W is supported by lift pins 223 in a raised state. Thereafter, the lift pins 223 are lowered to place the wafer W on the heat plate 224, and the heat treatment is performed in the heat treatment space formed by raising the ring shutter 222 and the gate shutter 221 at the same time. After the heat treatment, the lift pins 223 are raised, the ring shutter 222 and the gate shutter 221 are lowered, and the wafer W is separated from the hot plate 224 and supported by the lift pins 223.

  Thereafter, the temperature control plate 225 is inserted again into the heat treatment unit (HP) and receives the heat-treated wafer W. The wafer W is transferred into the temperature adjustment processing unit (CPL) 218a by the temperature adjustment plate 225, and the temperature adjustment processing is performed.

  The wafer W that has been subjected to the temperature adjustment processing by the temperature adjustment processing unit (CPL) 218a is transferred into the resist application unit (CT) 217 in the resist application unit group 213b by the transfer device 219a and applied with a resist solution.

  The wafer W coated with the resist solution by the resist coating unit (CT) 217 is transferred into the temperature adjustment processing unit (CPL) 218b of the second heating / temperature adjustment processing unit 210b by the transfer device 219a, and the temperature adjustment plate 225 is transferred. Placed on top. The wafer W placed on the temperature adjustment plate 225 is transferred into the heat treatment unit (HP) 220b through the communication port 230 by the temperature adjustment plate 225 horizontally moved by the moving mechanism 260. The transferred wafer W is supported by lift pins 223 in a raised state. Thereafter, the lift pins 223 are lowered to place the wafer W on the heat plate 224, and the heat treatment is performed in the heat treatment space formed by raising the ring shutter 222 and the gate shutter 221 at the same time. After the heat treatment, the lift pins 223 are raised and the ring shutter 222 and the gate shutter 221 are lowered, and the wafer W is separated from the hot plate 224 and supported by the lift pins 23.

  Thereafter, the temperature control plate 225 is inserted again into the heat treatment unit (HP) 220b, and the heat-treated wafer W is received. The wafer W is transferred into the temperature adjustment processing unit (CPL) 218b by the temperature adjustment plate 225, and the temperature adjustment processing is performed.

  The wafer W that has been subjected to the temperature adjustment processing by the temperature adjustment processing unit (CPL) 218b is transferred by the transfer device 219a to the transfer unit (STL) 238b disposed at the lowest stage of the second heating / temperature adjustment processing unit group 214b. Then, it passes through the communication path 242 and is transferred to the transfer unit (STL) 238c of the third heating / temperature adjustment processing unit group 214c.

  The wafer W transferred to the transfer unit (STL) in the third heating / temperature adjustment processing unit group 214c is heated by the transfer device 219b in the heating / temperature adjustment processing unit 210d of the fourth heating / temperature adjustment processing unit group 214d. It is transported to the unit.

  Further, the wafer W transferred to the temperature adjustment processing unit is transferred into the peripheral exposure apparatus 234 by the wafer transfer body 237 in the interface unit 205, and peripheral exposure is performed.

  The wafer W subjected to the peripheral exposure by the peripheral exposure apparatus 234 is transferred to the buffer cassette 233 by the wafer transfer body 237 and temporarily held, or the wafer transfer body 237, a pre-exposure temperature control unit (not shown), It is transferred to an exposure apparatus (not shown) via a wafer transfer body.

  Here, for example, two buffer cassettes 233 are provided, one can be used as a cassette for holding the wafer W after the peripheral exposure, and the other can be used as a cassette for holding the wafer W before the peripheral exposure. . At this time, it is desirable to provide a mechanism for adjusting the temperature of the wafer W to a room temperature of about 23 ° C. in the cassette that holds the wafer W before the peripheral exposure. Alternatively, the buffer cassette 233 holds only the wafer W after the peripheral exposure, and the wafer W before the peripheral exposure is vacant in the heating / temperature adjustment processing unit 210c or 210d of the second processing unit group 214c or 214d. The temperature adjustment processing unit 218c or 218d can also be used as a place for waiting for the wafer W before the peripheral exposure. In this case, there is no need to provide a buffer cassette for holding the wafer W before the peripheral exposure.

  Next, the wafer W that has been subjected to the exposure processing by the exposure apparatus is transferred from the interface unit 205 through the wafer carrier, the buffer cassette 233, and the wafer carrier 237 to the fourth heating / temperature adjustment processing unit of the second processing station 204. It is conveyed into the temperature adjustment processing unit (CPL) 218d of the fourth heating / temperature adjustment processing unit 210d in the group 214d, and the temperature adjustment processing is performed.

  The wafer W that has been subjected to the temperature adjustment processing by the temperature adjustment processing unit (CPL) 218d is transferred to the development processing unit (DEV) 226 in the first development processing unit group 213c or the second development processing unit group 213d by the transfer device 219b. Development processing is performed.

  The wafer W that has been subjected to the development processing in the development processing unit (DEV) 226 is transferred by the transfer device 219b, for example, the temperature adjustment processing unit (CPL) of the heating / temperature adjustment processing unit 210c in the third heating / temperature adjustment processing unit group 214c. The heat treatment unit (HP) 220c adjacent to the temperature control unit (CPL) 218c is conveyed through the temperature control unit 218c, and heat treatment is performed.

  The wafer W subjected to the heat treatment in the heat treatment unit (HP) 220c is transferred to the temperature adjustment processing unit 218c, transferred to the transfer unit (STL) 238c in the second processing station 204 by the transfer device 219b, and the communication path 242. And is transported to a transport unit (STL) 238b in the first processing station 203.

  The wafer W transferred to the transfer unit (STL) is transferred by the transfer device 219a to the temperature adjustment processing unit 218a of the first heating / temperature adjustment processing unit 210a in the first heating / temperature adjustment processing station group 214a. Then, the wafer W in the temperature adjustment processing unit 218 a is accommodated in the cassette C by the wafer transfer body 211 of the cassette station 202. Here, when the inspection machine 206 is installed, the wafer W in the temperature adjustment processing unit 218 a is transferred to the inspection machine 206 by the wafer transfer body 211 of the cassette station 202. The inspection machine 206 determines whether or not the width of the pattern obtained by the exposure and development process is appropriate by measuring the film thickness of the resist film. The inspected wafer W is accommodated in the cassette C by the wafer transfer body 211 of the cassette station 202.

  According to the coating and developing treatment system according to the present embodiment configured as described above, the temperature processing unit (CPL) of the heating / temperature control processing unit is arranged on the liquid processing unit side, so that the liquid processing unit. The temperature control unit (CPL) is interposed between the heat treatment unit (HP) and the heat treatment unit (HP). Thereby, the thermal influence from the heat processing unit with respect to the liquid processing unit side can be suppressed as much as possible. Therefore, in the coating and developing processing system, temperature control in the liquid processing unit (BARC, CT, DEV) for performing liquid processing on the wafer W can be precisely performed.

  Furthermore, according to the coating and developing treatment system according to the present embodiment, the liquid processing unit group (antireflection film coating unit (BARC) group 213a, resist film coating unit (CT)) in the first and second processing stations 203 and 204. Group 213b, first development processing unit group 213c, second development processing unit group 213d) and heating / temperature adjustment processing unit groups (first to fourth heating / temperature adjustment processing unit groups 214a, 214b, 214c, 214d). A passage 240 for circulating the gas exhausted from the lower portions of the heat insulating wall 239 and the liquid processing unit groups 213a, 213b, 213c, and 213d to the upper portion is disposed therebetween. Thereby, since the passage 240 also has a function of a heat insulating means, a double heat insulating means is arranged between the first processing unit group 213 and the second processing unit group 214, and further, the liquid processing unit group. Therefore, it is possible to control the temperature in the liquid processing unit group that performs liquid processing on the wafer W at around room temperature with extremely high precision.

  Next, a fifth embodiment of the present invention will be described with reference to FIGS. 39 to 41 are views showing a coating and developing treatment system according to an embodiment of the present invention, FIG. 39 is a plan view, and FIG. 40 is a front view. 41 is a cross-sectional view taken along line AA ′ of FIG. 39, and shows the positional relationship in the X direction between the first processing unit group 213a, the second processing unit group 214a, and the chemical tower 215a. FIG.

  This embodiment is different from the above-described fourth embodiment in that the arrangement of the chemical tower that stores the processing liquid is different, and the number of heating / temperature adjustment processing apparatuses disposed between the two transfer apparatuses 219a and 219b is one. However, it is structurally different. Hereinafter, although described in the fifth embodiment, a part of the description of the same structure as that of the fourth embodiment will be omitted. Moreover, about the structure similar to 4th Embodiment, the same code | symbol is attached | subjected and demonstrated.

  As shown in FIG. 39, the coating and developing processing system 201 includes a cassette station 202 similar to that of the fourth embodiment, and various single-wafer processing units that perform predetermined processing on the wafer W in the coating and developing processing step. , A second processing station 209 disposed adjacent to the first processing station, and an exposure disposed adjacent to the second processing station 209. An interface unit 205 for transferring the wafer W between apparatuses (not shown) is integrally connected. In the first processing station 208, an antireflection film and a resist film are mainly applied on the wafer W, and in the second processing station 209, the exposed resist film is developed.

  Since the cassette station 202 has the same structure as that of the fourth embodiment, the description thereof is omitted.

  As shown in FIGS. 39 and 40, in the first processing station 208, an antireflection film coating unit (BARC) group 213a and a resist film coating unit ( CT) group 213b is provided. The antireflection film coating unit (BARC) group 213a is configured by stacking antireflection film coating units (BARC) 216 that perform coating processing on the wafer W near normal temperature in three stages in the Z-axis direction. The resist film coating unit (CT) group 213b is configured by stacking resist film coating units (CT) 217 that perform coating processing on the wafer W in the vicinity of normal temperature in three stages in the Z-axis direction. Further, chemical towers 215a and 215b are arranged adjacent to the antireflection film coating unit (BARC) group 213a and the resist film coating unit (CT) group 213b, respectively. The chemical tower 215a contains an antireflection film material supplied as a processing liquid to the antireflection film coating unit (BARC) 216, and the chemical tower 215b is supplied as a processing liquid to the resist film coating unit (CT) 217. Resist material is contained.

  A first heating / temperature adjustment processing unit group 214a and a second heating / temperature adjustment processing unit group 214b are arranged as a second processing unit group on the back surface portion of the first processing station 208 with the transfer device 219a interposed therebetween. ing. The first heating / temperature adjustment processing unit group 214a and the second heating / temperature adjustment processing unit group 214b are disposed adjacent to the chemical towers 215a, 215b, respectively. In the first heating / temperature adjustment processing unit group 214a, the first heating / temperature adjustment processing units 210a are configured to be stacked in eight stages in the Z-axis direction. In the second heating / temperature adjustment processing unit group 214b, the second heating / temperature adjustment processing units 210b are configured to be stacked in eight stages in the Z-axis direction. Each of the first and second heating / temperature adjustment processing units 210a and 210b includes a temperature adjustment processing unit (CPL) 218a and 218b that performs a temperature adjustment process on the wafer W, and a heating processing unit (HP) 220a that performs a heating process. 220b are adjacent to each other and integrated.

  As shown in FIG. 41, the first heating / temperature adjustment processing unit group 214a is configured by stacking first heating / temperature adjustment processing units 210a in multiple stages. 41 is a cross-sectional view taken along the line AA ′ in FIG. 39, and shows a first processing unit group 213a, a chemical tower 215a, and a second processing unit group 214a along the X direction. FIG. As shown in FIGS. 39 and 41, the first heating / temperature adjustment processing unit group 214a as the second processing unit group is configured by stacking the first heating / temperature adjustment processing units 210a in eight stages, In the first heating / temperature adjustment processing unit 210a, the temperature adjustment processing unit (CPL) 218a out of the heat treatment unit (HP) 220a and the temperature adjustment processing unit (CP) 218a is disposed on the chemical tower 215a side as the processing liquid supply unit. Be placed. Then, an antireflection film application unit group 213a as a first processing unit group is disposed adjacent to the chemical tower 215a. Similarly, the second heating / temperature adjustment processing unit group 214b is configured by stacking the second heating / temperature adjustment processing units 210b in eight stages, and in all the first heating / temperature adjustment processing units 210b, the heating process is performed. Of the unit (HP) 220b and the temperature adjustment processing unit (CP) 218b, the temperature adjustment processing unit (CPL) 218b is disposed on the chemical tower 215b side as the processing liquid supply unit. A resist film coating unit group 213b as a first processing unit group and a first development processing unit group 213c to be described later are arranged adjacent to the chemical tower 215b.

  Around the vertical transfer type transfer device 219a, an antireflection film coating unit (BARC) group 213a, a resist film coating unit (CT) group 213b, and first and second heating / temperature adjustment processing unit groups 214a and 214b are arranged. Has been. The structures of the transfer device 219a, the antireflection film coating unit (BARC) group 213a, the resist film coating unit (CT) group 213b, and the first heating / temperature adjustment processing unit group 214a in the first processing station 208 are the same as those described above. The first processing station 203 in the embodiment has the same structure as each component, and detailed description thereof is omitted here. The second heating / temperature adjustment processing unit group 214b in the present embodiment has shutter members 247a, 247b on both side surfaces as compared to the second heating / temperature adjustment processing unit group 214b in the fourth embodiment described above. The structure is different in that there is no transport unit (STL). In the present embodiment, the transfer of the wafer W between the first processing station 208 and a second processing station 209, which will be described later, is performed by the second heating / temperature control unit group 214b. This can be done via the temperature adjustment processing unit 218b of the processing unit 210b. Therefore, shutter members 247a and 247b are provided on both side surfaces of each temperature adjustment processing unit 218b.

  On the other hand, in the second processing station 209, as shown in FIGS. 39 and 40, as in the first processing station 208, the first processing unit that performs liquid processing on the wafer W near the normal temperature on the front side. As a group, a first development processing unit group 213c and a second development processing unit group 213d are arranged. The first development processing unit group 213c is configured by stacking development processing units (DEV) 226 in two stages in the Z-axis direction, and the second development processing unit group 213d is similarly configured with the development processing unit (DEV) 226 in the Z-axis direction. Are stacked in two stages. Further, a chemical tower 215c is disposed adjacent to the second development processing unit group 213d. The chemical tower 215c contains a developer supplied as a processing solution to the development processing unit (DEV) 226.

  On the back surface of the second processing station 209, a third heating / temperature adjustment processing unit group as a second processing unit group is provided at a position facing the second heating / temperature adjustment processing unit group 210b with the transfer device 219b interposed therebetween. 214c is arranged. The third heating / temperature adjustment processing unit group 214c is disposed adjacent to the chemical tower 215c. The third heating / temperature adjustment processing unit group 214c is configured by stacking the third heating / temperature adjustment processing units 210c in eight stages in the Z-axis direction.

  In the third heating / temperature adjustment processing unit 210c, temperature adjustment processing units (CPL) 218c and 218d for performing temperature adjustment processing on the wafer W and heating processing units (HP) 220c and 220d for performing heating processing are adjacent to each other. And integrated. As shown in FIG. 39, the temperature adjustment processing unit (CPL) 218c among the temperature adjustment processing units (CPL) 218c and the heat treatment units (HP) 220c of all the third heating / temperature adjustment processing units 210c stacked. Is disposed on the chemical tower 215c side as the processing liquid supply unit. A second development processing unit (DEV) group 213d as a first processing unit group is disposed adjacent to the chemical tower 215c.

  Around the vertical conveyance type conveyance device 219b, a first development processing unit group 213c, a second development processing unit group 213d, and second and third heating / temperature adjustment processing unit groups 214b and 214c are arranged. Here, the second heating / temperature adjustment processing unit group 214b can cope with both the heating process or the temperature adjustment process before and after the formation of the coating film on the wafer and the heating process or the temperature adjustment process before and after the development process. . Then, the wafer W is transferred between the second heating / temperature adjustment processing unit group 214b and the third heating / temperature adjustment processing unit group 214c, and the second heating / temperature adjustment processing unit group 214b and the first or second development. Transfer of wafer W between processing unit (DEV) groups 213c and 213d, and transfer between third heating / temperature adjustment processing unit group 214c and first or second development processing unit (DEV) groups 213c and 213d The wafer W is transferred by the transfer device 219b. The transfer of the wafer W between the second or third heating / temperature regulation processing unit group 214b, 214c and the transfer device 219b is performed via 247b, 247a provided in each temperature regulation processing unit 218b, 218c. Is called. In addition, the transfer of the wafer W between the temperature adjustment processing unit 218b of the third heating / temperature adjustment processing unit 210c and the wafer transfer body 237 is performed via the shutter member 247b of the temperature adjustment processing unit 218c.

  The interface unit 205 has the same structure as that of the interface unit 205 in the above-described fourth embodiment, and thus description thereof is omitted individually.

  Further, in the coating and developing processing system 1, as shown in FIGS. 39 and 41, the first processing unit group 213 (antireflection film coating unit (BARC) group) in the first processing station 208 and the second processing station. 213a, resist film coating unit (CT) group 213b, first development processing unit (DEV) group 213c, second development processing unit (DEV) group 213d) and second processing unit group 214 (first heating / temperature control processing) A chemical tower 215 (215a, 215b, 215c) is arranged between the unit group 214a, the second heating / temperature adjustment processing unit group 214b, and the third heating / temperature adjustment processing unit group 214c). Between the chemical tower 215 and the second processing unit group 214, the heat insulating wall 239 and the first processing unit group 213 are provided. A passage 240 for circulating the evacuated gas to the upper part are arranged from the part. The passage 240 and the heat insulating wall 239 provided adjacent to the chemical tower 215b function as a temperature control mechanism and heat insulating means for the two first processing unit groups 214a corresponding to the one second processing unit group 214b. To do. Also in the present embodiment, as in the fourth embodiment described above, a clean air supply unit that supplies clean air temperature-controlled from above to each first processing unit group is provided on the top of the coating and developing treatment system. Has been placed. The clean air supply unit includes a FFU (fan filter unit) and a temperature control device for adjusting temperature and humidity, and a passage for circulating the gas exhausted from the lower part of the first processing unit group to the upper part thereof. Clean air from which particles and the like have been removed by adjusting temperature and humidity from the gas flowing in through 240 is supplied to the first processing unit group through the passage 243. Also in this embodiment, similarly to the above-described fourth embodiment, the temperature control in which the passage 240 for circulating the gas exhausted from the lower part of the heat insulating wall 239 and the first processing unit group 213 to the upper part thereof is arranged. By providing the mechanism, it is possible to precisely control the temperature in the processing liquid supply unit (BARC, CT, DEV) for processing the wafer W near normal temperature. Furthermore, since the passage 240 also has a function of heat insulation means, a double heat insulation means is arranged by providing the heat insulation wall 239 and the passage 240 between the second processing unit group 214 and the chemical tower 215. Become. Therefore, the temperature control in the liquid processing unit group that performs liquid processing on the wafer W near normal temperature can be performed very precisely, and the processing liquid stored in the chemical tower 215 is affected by the thermal effect of the heat processing unit 220. This makes it difficult to adjust the temperature of the treatment liquid.

  As shown in FIG. 40, in the above-described antireflection film coating unit (BARC) group 213a, an antireflection film is applied by placing the wafer W on a spin chuck in a cup and applying the antireflection film to the wafer W. Antireflection film coating units (BARC) 216 for processing are stacked in three stages. In the resist coating unit group 213b, resist coating units (CT) for applying a resist coating process to the wafer W by placing the wafer W on a spin chuck in the cup and applying a resist solution are stacked in three stages. . In the first development processing unit group 213c, a development processing unit (DEV) 226 that performs development processing on the wafer W by placing the wafer W on the spin chuck in the cup and supplying the developer is arranged in two stages from the top. Are stacked. Similarly, in the second development processing unit group 213d, a development processing unit (DEV) 226 that places the wafer W on the spin chuck in the cup and supplies the developer to perform development processing on the wafer W is provided from above. It is stacked in two stages.

  In the first, second, and third heating / temperature adjustment processing unit groups 214a, 214b, and 214c, the temperature adjustment processing is performed on the wafer W and the heating processing unit (HP) 220 that performs the heating processing on the wafer W, respectively. A heating / temperature regulation processing unit 210 that is integrated with a temperature regulation processing unit (CPL) 218 adjacent to each other is configured to be stacked in eight stages, and as described above, shutters are provided on the side surfaces of all the temperature regulation processing units. Members 247a and 247b are provided. In addition, since the structure of the heating / temperature adjustment processing unit 210 in this embodiment is the same as that of the above-mentioned 4th Embodiment, description is abbreviate | omitted here.

  Since the structures of the transfer devices 219a and 219b described above are the same as those of the transfer devices 219a and 219b of the fourth embodiment described above, description thereof is omitted.

  Next, processing steps in the coating and developing processing system 201 configured as described above will be described. The operation in the heating / temperature adjustment processing unit is the same as that in the above-described fourth embodiment, and will not be described.

  In the coating and developing processing system 201, the unprocessed wafer W accommodated in the cassette C is taken out by the wafer transfer body 211 of the cassette station 202, and then the first heating / temperature control heat treatment unit 210a of the first processing station 203. The temperature adjustment processing unit (CPL) 218a is transported and placed on the temperature adjustment plate 225 for temperature adjustment processing.

  The wafer W that has been subjected to the temperature adjustment processing in the temperature adjustment processing unit (CPL) 218a is transferred into the antireflection film application unit (BARC) 216 in the antireflection film application unit (BARC) group 213a by the transfer device 219a. A treatment liquid for an antireflection film is applied.

  The wafer W coated with the antireflection film processing liquid by the antireflection film coating unit (BARC) 216 is transferred into the temperature adjustment processing unit (CPL) 218a of the first heating / temperature adjustment processing unit 210a by the transfer device 219a. And placed on the temperature control plate 225. The wafer W placed on the temperature control plate 225 is transferred into the heat treatment unit (HP) 220a and subjected to heat treatment.

  Thereafter, the wafer W is transferred into the temperature adjustment processing unit (CPL) 218a, and the temperature adjustment processing is performed.

  The wafer W that has been subjected to the temperature adjustment processing by the temperature adjustment processing unit (CPL) 218a is transferred into the resist application unit (CT) 217 in the resist application unit group 213b by the transfer device 219a and applied with a resist solution.

  The wafer W coated with the resist solution by the resist coating unit (CT) 217 is transferred by the transfer device 219a into the temperature adjustment processing unit (CPL) 218b of the second heating / temperature adjustment processing unit 210b. Further, the wafer W is transferred into the heat treatment unit (HP) 220b and subjected to heat treatment.

  Thereafter, the wafer W is transferred into the temperature adjustment processing unit (CPL) 218b, and temperature adjustment processing is performed. The wafer W that has been subjected to temperature adjustment processing by the temperature adjustment processing unit (CPL) 218b is transferred to the temperature adjustment processing unit 218c of the heating / temperature adjustment processing unit 210c of the third heating / temperature adjustment processing unit group 214c by the transfer device 219b. Is done.

  Further, the wafer W transferred to the temperature adjustment processing unit is transferred into the peripheral exposure apparatus 234 by the wafer transfer body 237 in the interface unit 205, and peripheral exposure is performed.

  The wafer W subjected to the peripheral exposure by the peripheral exposure apparatus 234 is transferred to the buffer cassette 233 by the wafer transfer body 237 and temporarily held, or the wafer transfer body 237, a pre-exposure temperature control unit (not shown), It is transferred to an exposure apparatus (not shown) via a wafer transfer body.

  Next, the wafer W that has been subjected to exposure processing by the exposure apparatus is transferred from the interface unit 205 through the wafer transfer body, the buffer cassette 233, and the wafer transfer body 237 to the third heating / temperature adjustment processing unit of the second processing station 209. It is conveyed into the temperature adjustment processing unit (CPL) 218c of the fourth heating / temperature adjustment processing unit 210c in the group 214c, and the temperature adjustment processing is performed.

  The wafer W that has been subjected to the temperature adjustment processing by the temperature adjustment processing unit (CPL) 218c is transferred to the development processing unit (DEV) 226 in the first development processing unit group 213c or the second development processing unit group 213d by the transfer device 219b. Development processing is performed.

  The wafer W that has been subjected to the development processing in the development processing unit (DEV2) 26 is transferred by the transfer device 219b, for example, the temperature adjustment processing unit (CPL) of the heating / temperature adjustment processing unit 210b in the second heating / temperature adjustment processing unit group 214b. The heat treatment unit (HP) 220b adjacent to the temperature control unit (CPL2) 18b is conveyed through the temperature control unit 218b, and heat treatment is performed.

  The wafer W that has been subjected to the heat treatment by the heat treatment unit (HP) 220b is transferred to the temperature adjustment processing unit 218b, and the first heating / temperature adjustment processing unit 210a in the first heating / temperature adjustment processing station group 214a is transferred by the transfer device 219a. To the temperature control processing unit 218a. Then, the wafer W in the temperature adjustment processing unit 218 a is accommodated in the cassette C by the wafer transfer body 211 of the cassette station 202.

  According to the coating and developing treatment system according to the present embodiment configured as described above, a chemical tower as a processing liquid supply unit is disposed adjacent to the liquid processing unit (BARC, CT, DEV), and adjacent to the chemical tower. The heating / temperature adjustment processing unit is arranged, and the temperature adjustment processing unit (CPL) of the heating / temperature adjustment processing unit is arranged on the chemical tower side, so that the heating treatment unit and liquid treatment of the heating / temperature adjustment processing unit are arranged. A temperature control unit and a chemical tower are interposed between the units. Thereby, the thermal influence from the heat treatment unit on the liquid treatment unit side can be greatly suppressed, and in the coating and developing treatment system, the liquid treatment units (BARC, CT, DEV) can be precisely controlled.

  Furthermore, according to the coating and developing system according to the present embodiment, a liquid processing unit group (antireflection film coating unit (BARC) group 213a, resist film coating unit (CT) group 213b, first development processing unit (DEV) group). 213c, a second development processing unit (DEV) group 213d) and a heating / temperature adjustment processing unit group (first to fourth heating / temperature adjustment processing unit groups 214a, 214b, 214c, 214d), respectively. 39 and the passage 240 for circulating the gas exhausted from the lower part of each of the liquid processing unit groups 213a, 213b, 213c, 213d to the upper part thereof are arranged, so that the heating / temperature control processing unit for the liquid processing unit group is further provided. The liquid processing unit that prevents the thermal effect of the heat processing unit of the liquid and performs the liquid processing on the wafer W near room temperature The temperature can be controlled very precisely in.

  Hereinafter, a sixth embodiment of the present invention will be described with reference to FIGS. 42 to 44. 42 to 44 are views showing a coating and developing treatment system according to an embodiment of the present invention. FIG. 42 is a plan view and FIG. 43 is a front view. 44 is a cross-sectional view taken along the line BB ′ of FIG. 42, and shows the positional relationship in the X direction between the first processing unit group 213a and the second processing unit group 214a. is there.

  This embodiment is different from the above-mentioned fourth embodiment in terms of the arrangement position of the chemical tower that contains the processing liquid, the number of transfer devices and heating / temperature control processing devices, and the antireflection film coating unit (BARC). In addition, the structure differs in that the resist film coating units (CT) are stacked, and the entire system is downsized as compared with the fourth and fifth embodiments.

  Hereinafter, although described in the sixth embodiment, a part of the description of the same structure as that of the fourth embodiment will be omitted. Moreover, about the structure similar to 4th Embodiment, the same code | symbol is attached | subjected and demonstrated.

  As shown in FIG. 42, the coating and developing processing system 1 includes a cassette station 202 similar to that of the fourth embodiment, and various single-wafer processing units that perform predetermined processing on the wafer W in the coating and developing processing step. , A second processing station 246 disposed adjacent to the first processing station, and an exposure disposed adjacent to the second processing station 246. An interface unit 205 for transferring the wafer W between apparatuses (not shown) is integrally connected. In the first processing station 245, an antireflection film and a resist film are mainly applied on the wafer W, and in the second processing station 246, the exposed resist film is developed. A transfer device 219 is disposed almost at the center of the coating and developing treatment system 201, and the transfer device 219 is used for transferring the wafer W being processed in the first processing station 245 and the second processing station 246.

  Since the cassette station 202 has substantially the same structure as that of the fourth embodiment, only different portions will be described. As shown in FIG. 43, at the bottom of the cassette station 202, a chemical tower 215b that accommodates a resist film material supplied as a processing liquid to a resist film coating unit (CT) 217 described later is disposed.

  As shown in FIGS. 42 and 43, in the first processing station 245, an antireflection film / resist film coating unit (CT) group 213e is provided as a first processing unit group in which liquid processing is performed on the front side. ing. The antireflection / resist film application unit (CT) group 213e is divided into two stages, an antireflection film application unit (BARC) 216 and a resist film application unit (CT) 217, each of which performs an application process on the wafer W near room temperature. Stacked in the axial direction. Further, a chemical tower 215a is disposed adjacent to the antireflection / resist film coating unit (CT) group 213e. The chemical tower 215a contains an antireflection film material supplied as a treatment liquid to the antireflection film coating unit (BARC) 216.

  A first heating / temperature adjustment processing unit group 214a as a second processing unit group is disposed on the back surface of the first processing station 245 adjacent to the chemical tower 215a. The first heating / temperature adjustment processing unit group 214a is configured by stacking the first heating / temperature adjustment processing units 210a in multiple stages in the Z-axis direction. In each first heating / temperature adjustment processing unit 210a, a temperature adjustment processing unit (CPL) 218a that performs a temperature adjustment process on the wafer W and a heating processing unit (HP) 220a that performs a heating process are adjacent to each other and integrated. It is structured.

  As shown in FIG. 44, the first heating / temperature adjustment processing unit group 214a is configured by stacking the first heating / temperature adjustment processing units 210a in 12 stages. FIG. 44 is a cross-sectional view taken along the line BB ′ of FIG. 42, and the first processing unit group 213a, the second processing unit group 214a, and the chemical tower 215a along the X direction. It is a figure which shows these positional relationships. As shown in FIGS. 42 and 44, the first heating / temperature adjustment processing unit group 214a is configured by stacking the first heating / temperature adjustment processing units 210a in 12 stages, and is arranged adjacent to the chemical tower 215a. Yes. Further, in all the first heating / temperature adjustment processing units 10a of the first heating / temperature adjustment processing unit group 214a, the temperature adjustment processing unit (CPL) among the heating processing unit (HP) 220a and the temperature adjustment processing unit (CP) 218a. ) 218a is disposed on the chemical tower 215a side. An antireflection film / resist film application unit (CT) group 213e is disposed adjacent to the chemical tower 215a.

  On the other hand, in the second processing station 246, as shown in FIGS. 42 and 43, a development processing unit group 213f is arranged on the front side as a first processing unit group that performs liquid processing on the wafer W near room temperature. ing. The development processing unit group 213f is configured by stacking development processing units (DEV) 226 in four stages in the Z-axis direction. Further, a chemical tower 215c is disposed adjacent to the development processing unit group 213f. The chemical tower 215c contains a developer supplied as a processing solution to the development processing unit (DEV) 226.

  On the back surface of the second processing station 299, a second heating / temperature adjustment processing unit group 214b is disposed adjacent to the chemical tower 215c. The second heating / temperature adjustment processing unit group 214b is configured by stacking the second heating / temperature adjustment processing units 210b in 212 stages in the Z-axis direction. In all the second heating / temperature adjustment processing units 210b of the second heating / temperature adjustment processing unit group 214b, the temperature adjustment processing unit (CPL) among the heating processing unit (HP) 220b and the temperature adjustment processing unit (CP) 218b. ) 218b is disposed on the chemical tower 215c side. A development processing unit (DEV) group 213f is disposed adjacent to the chemical tower 215c.

  Around the vertical transfer type transfer device 219, an antireflection film / resist film coating unit (CT) group 213e, a development processing unit group 213f, and first and second heating / temperature adjustment processing unit groups 214a and 214b are arranged. ing. The wafer W is transferred between the unit groups by the transfer device 219. Also, the wafer W is transferred between the first heating / temperature adjustment processing unit group 214a and the wafer transfer body 211, the wafer W is transferred between the second heating / temperature adjustment processing unit group 214b and the wafer transfer body 237, and the first or first The delivery of the wafer W between the two heating / temperature adjustment processing unit groups 214a, 214b and the transfer device 219 is performed by the heating / temperature adjustment processing units 210a, 210b of the first or second heating / temperature adjustment processing unit groups 214a, 214b. This is performed via shutter members 247a and 247b provided on both side surfaces of the temperature adjustment processing units 218a and 218b.

  The interface unit 205 has the same structure as that of the interface unit 205 in the fourth embodiment described above, and a description thereof will be omitted.

  In this coating and developing processing system 201, as shown in FIGS. 42 and 43, a first processing unit group 213 (an antireflection film / resist film coating unit (CT) group 213e, a developing processing unit group 213f) and a second processing unit group 213f are provided. A chemical tower 215 (215a, 215c) is disposed between the processing unit group 214 (the first heating / temperature control processing unit group 214a and the second heating / temperature control processing unit group 214b), and further has a chemical structure. Between the tower 215 and the second processing unit group 214, a passage 240 for circulating the gas exhausted from the heat insulation wall 239 and the lower part of the first processing unit group 213 to the upper part is disposed. Also in the present embodiment, as in the fourth embodiment described above, a clean air supply unit that supplies clean air temperature-controlled from above to each first processing unit group is provided on the top of the coating and developing treatment system. Has been placed. The clean air supply unit includes a FFU (fan filter unit) and a temperature control device for adjusting temperature and humidity, and a passage for circulating the gas exhausted from the lower part of the first processing unit group to the upper part thereof. Clean air from which particles and the like have been removed by adjusting temperature and humidity from the gas flowing in through 240 is supplied to the first processing unit group through the passage 243. Also in this embodiment, similarly to the above-described fourth embodiment, the temperature control in which the passage 240 for circulating the gas exhausted from the lower part of the heat insulating wall 239 and the first processing unit group 213 to the upper part thereof is arranged. By providing the mechanism, the temperature control in the processing liquid supply unit (BARC, CT, DEV) for processing the wafer W near the normal temperature can be performed more precisely.

  As shown in FIG. 43, in the above-described antireflection film / resist film application unit (CT) group 213e, a wafer W is placed on a spin chuck in a cup and an antireflection film is applied, and the wafer W is reflected. An anti-reflection film coating unit (BARC) 216 for performing an anti-film coating process is provided in two stages. A resist coating is performed on the wafer W by applying a resist solution by placing the wafer W on a spin chuck in a cup. Units (CT) 217 are stacked in two stages. In the development processing unit group 213f, development processing units (DEV) 226 that stack the wafer W on a spin chuck in the cup and supply a developing solution to perform development processing on the wafer W are stacked in 42 stages. .

  In the first and second heating / temperature adjustment processing unit groups 214a and 214b, a heating processing unit (HP) 220 that performs a heating process on the wafer W and a temperature adjustment processing unit that performs a temperature adjustment process on the wafer W ( CPL) 218 are integrated so as to be adjacent to each other, and the heating / temperature adjustment processing unit 210 is stacked in 12 stages. The shutter members 247a and 247b are provided on the side surfaces of the temperature adjustment processing units of all the heating / temperature adjustment processing units 210. Note that the structure of the heating / temperature adjustment processing unit 210 in this embodiment is the same as that of the above-described fourth embodiment, and a description thereof will be omitted here.

  Since the structure of the transfer device 219 described above is the same as that of the transfer devices 219a and 219b of the fourth embodiment described above, description thereof is omitted.

  Next, processing steps in the coating and developing processing system 1 configured as described above will be described. The operation in the heating / temperature adjustment processing unit is the same as that in the above-described fourth embodiment, and will not be described.

  In the coating and developing processing system 201, the unprocessed wafer W accommodated in the cassette C is taken out by the wafer transfer body 211 of the cassette station 202, and then the first heating / temperature control heat treatment unit 210a of the first processing station 203. The temperature adjustment processing unit (CPL) 218a is transported and placed on the temperature adjustment plate 225 for temperature adjustment processing.

  The wafer W that has been subjected to the temperature adjustment processing in the temperature adjustment processing unit (CPL) 218a is transferred into the antireflection film application unit (BARC) 216 in the antireflection film / resist film application unit (CT) group 213e by the transfer device 219. It is conveyed and a treatment liquid for antireflection film is applied.

  The wafer W coated with the antireflection film processing liquid by the antireflection film coating unit (BARC) 216 is transferred by the transfer device 219 into the temperature adjustment processing unit (CPL) 218a of the first heating / temperature adjustment processing unit 210a. And placed on the temperature control plate 225. The wafer W placed on the temperature control plate 225 is transferred into the heat treatment unit (HP) 220a and subjected to heat treatment.

  Thereafter, the wafer W is transferred into the temperature adjustment processing unit (CPL) 218a, and the temperature adjustment processing is performed.

  The wafer W on which the temperature adjustment processing has been performed by the temperature adjustment processing unit (CPL) 218a is transferred by the transfer device 219 into the resist coating unit (CT) 217 in the antireflection film / resist coating unit group 213e, and the resist solution is applied. Is done.

  The wafer W coated with the resist solution by the resist coating unit (CT) 217 is transferred by the transfer device 219 into the temperature adjustment processing unit (CPL) 218b of the second heating / temperature adjustment processing unit 210b. Further, the wafer W is transferred into the heat treatment unit (HP) 220b and subjected to heat treatment.

  Thereafter, the wafer W is transferred into the temperature adjustment processing unit (CPL) 218b, and temperature adjustment processing is performed. The wafer W that has been subjected to the temperature adjustment processing by the temperature adjustment processing unit (CPL) 218b is transferred into the peripheral exposure apparatus 234 by the wafer transfer body 237 in the interface unit 205, and peripheral exposure is performed.

  The wafer W subjected to the peripheral exposure by the peripheral exposure apparatus 234 is transferred to the buffer cassette 233 by the wafer transfer body 237 and temporarily held, or the wafer transfer body 237, a pre-exposure temperature control unit (not shown), It is transferred to an exposure apparatus (not shown) via a wafer transfer body.

  Next, the wafer W that has been subjected to exposure processing by the exposure apparatus is transferred from the interface unit 205 to the second heating / temperature adjustment processing unit of the second processing station 246 via the wafer transfer body, the buffer cassette 233, and the wafer transfer body 237. It is conveyed into the temperature adjustment processing unit (CPL) 218b of the second heating / temperature adjustment processing unit 210b in the group 214b, and the temperature adjustment processing is performed.

  The wafer W that has been subjected to the temperature adjustment processing by the temperature adjustment processing unit (CPL) 218b is transferred to the development processing unit (DEV) 226 in the development processing unit group 213f by the transfer device 219, and development processing is performed.

  The wafer W that has undergone development processing in the development processing unit (DEV) 226 is transferred by the transfer device 219 to the temperature adjustment processing unit (CPL) 218a of the heating / temperature adjustment processing unit 210a in the first heating / temperature adjustment processing unit group 214a. Then, the heat treatment unit (HP) 220a adjacent to the temperature control unit (CPL) 218a is conveyed to perform heat treatment.

  The wafer W that has been subjected to the heat treatment by the heat treatment unit (HP) 220 a is transferred to the temperature adjustment processing unit 218 a and further accommodated in the cassette C by the wafer transfer body 211 of the cassette station 2.

  According to the coating and developing treatment system according to the present embodiment configured as described above, a chemical tower as a processing liquid supply unit is disposed adjacent to the liquid processing unit (BARC, CT, DEV), and adjacent to the chemical tower. The heating / temperature adjustment processing unit is arranged, and the temperature adjustment processing unit (CPL) of the heating / temperature adjustment processing unit is arranged on the chemical tower side, so that the heating treatment unit and liquid treatment of the heating / temperature adjustment processing unit are arranged. A temperature control unit and a chemical tower are interposed between the units. Thereby, the thermal influence from the heat treatment unit on the liquid treatment unit side can be greatly suppressed, and in the coating and developing treatment system, the liquid treatment units (BARC, CT, DEV) can be precisely controlled.

  Furthermore, according to the coating and developing system according to the present embodiment, a liquid processing unit group (an antireflection film / resist film coating unit (CT) group 213e, a developing processing unit group 213f) and a heating / temperature control processing unit group (first Between the first and second heating / temperature control processing unit groups 214a and 214b), a passage 240 for circulating the gas exhausted from the lower portions of the heat insulating wall 239 and the liquid processing unit groups 213e and 213f to the upper portion thereof, respectively. Is arranged to prevent the thermal effect of the heating processing unit of the heating / temperature control processing unit on the liquid processing unit group, and to control the temperature in the liquid processing unit group that performs liquid processing on the wafer W near room temperature. It can be done very precisely. Further, the passage 240 has a kind of heat insulation means, and the heat insulation wall 239 and the passage 240 are provided between the second processing unit group 214 and the chemical tower 215, thereby having a structure having double heat insulation means. Become. Therefore, the treatment liquid stored in the chemical tower 215 is not easily affected by the heat treatment unit 220 and the temperature can be easily adjusted.

  In each of the above embodiments, the wafer W is described as an example of the substrate. However, the present invention can be applied to other substrates such as an LCD substrate.

  The present invention is not limited to the embodiment described above.

  In the first embodiment, three heat treatment system units (G3 to G5), two main wafer transfer units (A1, A2), and two coating system units (G1, G2) are provided. However, for example, four heat treatment system unit sections, three main wafer transfer sections, and three coating system unit sections may be added in the horizontal direction in FIG. 1 while maintaining the arrangement. It is also possible to add more as necessary.

  Further, in the heat treatment unit shown in FIGS. 11 and 12, the temperature control / conveying device C and the heat treatment device H have a structure in which a shielding plate 93 indicated by a one-dot chain line for suppressing mutual heat interference is provided. In the case of carrying by the carrying device C, the shielding plate 93 may be slid to open and close.

  Furthermore, the present invention can be applied not only to a semiconductor wafer but also to a glass substrate used in a liquid crystal display device, for example.

  The present invention can be applied not only to a resist coating and developing system, but also to other systems such as an SOD (Spin on Dielectric) processing system for forming an interlayer insulating film on a substrate. The SOD processing system has a coating unit that coats an interlayer insulating film material on a substrate and a heating / temperature regulation processing unit that heats and regulates the temperature of the substrate coated with the insulating film material. This heating / temperature control processing unit includes a heating processing unit and a temperature control processing unit provided adjacent to the heating processing unit, similar to the heating / temperature control processing unit of the present embodiment. The processing unit has a hot plate capable of setting the temperature to 200 to 470 ° C. In a system having such a high-temperature processing unit and a coating unit as a liquid processing unit, the coating unit and heating / temperature control are arranged so that the temperature control unit is arranged on the coating unit side as in the present invention. It is very effective to arrange processing units. Alternatively, a processing liquid storage unit for storing the processing liquid supplied to the coating unit disposed adjacent to the liquid processing unit is disposed adjacent to the heating / temperature control processing unit, and further the temperature control processing unit is stored in the processing liquid. It is very effective to arrange it so as to be located on the part side. Thereby, the temperature control in the liquid processing unit group can be performed very precisely.

1 is a plan view showing an overall configuration of a substrate processing apparatus according to a first embodiment of the present invention. It is a front view which shows the whole structure of the same substrate processing apparatus. It is a rear view which shows the whole structure of the same substrate processing apparatus. It is sectional drawing of the main wafer conveyance part by the 1st Embodiment of this invention. It is a perspective view which shows the principal part of the main wafer conveyance part. It is a side view of the main wafer conveyance part. It is a side view which shows the drive mechanism of the main wafer conveyance body in the main wafer conveyance part. It is a front view of the main wafer conveyance body. It is sectional drawing of the main wafer conveyance body. [10]-[10] line direction sectional drawing in FIG. It is a cross-sectional view of a pre-baking unit (PAB), a post-exposure baking unit (PEB), and a post-baking unit (POST) according to the first embodiment of the present invention. It is a longitudinal cross-sectional view of the heat processing unit. It is a schematic diagram for showing the temperature control mechanism of the housing | casing in the heat processing unit. It is a cross-sectional view of a high-precision temperature control unit (CPL) according to the first embodiment of the present invention. 1 is a cross-sectional view of a high temperature heat treatment unit (BAKE) according to a first embodiment of the present invention. It is a cross-sectional view of the transition unit (TRS) by the 1st Embodiment of this invention. It is a top view which shows the resist application unit by the 1st Embodiment of this invention. It is the longitudinal cross-sectional view. FIG. 2 is a plan view showing a developing unit according to the first embodiment of the present invention. It is the longitudinal cross-sectional view. It is a flowchart which shows a series of operation | movement of the substrate processing apparatus by the 1st Embodiment of this invention. It is a figure for demonstrating the effect | action of the board | substrate delivery in a heat processing unit. It is an effect | action figure of the heat processing unit. It is a schematic front view which shows the flow of the clean air of the substrate processing apparatus by the 1st Embodiment of this invention. It is a schematic side view which shows the flow of the clean air. It is a schematic side view which shows the flow of the clean air. It is a figure for demonstrating the opening / closing operation | movement (the 1) of the shutter which concerns on this invention. It is a figure for demonstrating the opening / closing operation | movement (the 1) of the shutter which concerns on this invention. It is a cross-sectional view of the heat treatment unit according to the second embodiment of the present invention. It is a partial top view of the substrate processing apparatus by the 3rd Embodiment of this invention. It is a top view which shows the coating and developing treatment system which concerns on 4th Embodiment of this invention. FIG. 32 is a front view of the coating and developing treatment system shown in FIG. 31. It is sectional drawing at the time of cut | disconnecting the area | region which has the temperature control and heat processing unit group of FIG. 31 along a Y direction. It is sectional drawing at the time of cut | disconnecting the area | region which has the temperature control processing unit of FIG. 31 along a X direction. It is a perspective view which shows the structure of a conveying apparatus. It is a top view which shows the structure of a heating and temperature control processing unit. It is sectional drawing which shows the structure of the heating and temperature control processing unit shown in FIG. It is sectional drawing which shows a temperature control mechanism structure. It is a top view which shows the coating and developing treatment system which concerns on 5th Embodiment of this invention. FIG. 40 is a front view of the coating and developing treatment system shown in FIG. 39. It is sectional drawing at the time of cut | disconnecting along line AA 'of FIG. It is a top view which shows the coating and developing treatment system which concerns on 6th Embodiment of this invention. FIG. 43 is a front view of the coating and developing treatment system shown in FIG. 42. It is sectional drawing at the time of cut | disconnecting along line BB 'of FIG.

Explanation of symbols

W ... Semiconductor wafers G1 to G5 ... First to fifth processing unit parts u ... Gap A1 ... First main wafer transfer part A2 ... Second main wafer transfer part F ... Filter S ... Sensor
C ... Temperature control and transfer device
H ... Heat treatment equipment
LH ... Low temperature heat treatment equipment
HH ... High-temperature heat treatment apparatus 1 ... Substrate processing apparatus 7a ... Upper stage arm 7b ... Middle stage arm 7c ... Lower stage arm 8 ... Control part 9 ... Shielding plate 16 ... Main wafer transfer body 17 ... Second main wafer transfer body 36 ... Fan 38 ... Door 40 ... Panel 41 ... Case 44 ... Enclosure member 58 ... Liquid supply device 75 ... Case 75b ... Flow path 75c ... Opening 75a ... Opening 76 ... Shutter 84 ... Elevating pin 93 ... Shielding plate 115 ... Sub arm 150 ... Substrate Processing apparatus 201 ... Coating development processing system 210 ... Heating / temperature adjustment processing unit 213 ... First processing unit group 213a ... Antireflection film coating unit (BARC) group 213b ... Resist film coating unit (CT) group 213c ... First development Processing unit group 213d ... Second development processing unit group 213e ... Antireflection film / resist film coating unit (CT) group 21 3f ... Development processing unit group 214 ... Second processing unit group 214a ... First heating / temperature control processing unit group 214b ... Second heating / temperature control processing unit group 214c ... Third heating / temperature control processing unit group 214d ... First 4 Heating / Temperature Control Unit Group 215 Chemical Tower 216 Anti-reflective coating unit (BARC)
217 ... Resist film coating unit (CT)
218 ... Temperature control unit 219 ... Conveying device 220 ... Heat processing unit 226 ... Development processing unit

Claims (11)

A processing unit having openings on both sides for delivering the substrate;
A first and a second main transport unit arranged to face each opening of the processing unit and carrying the substrate in and out of the processing unit through the opening;
The processing unit is
A temperature control unit for transferring the substrate between the first and second main transfer units through the opening and adjusting the substrate to a predetermined temperature;
A first processing unit for performing thermal processing on the substrate;
A second processing unit for performing thermal processing on the substrate;
A sub-transport unit for transporting the substrate between the temperature control unit, the first processing unit, and the second processing unit;
The substrate processing apparatus , wherein the temperature control unit, the first processing unit, and the second processing unit are linearly arranged . The substrate processing apparatus according to claim 1,
  The substrate processing apparatus, wherein the processing units are arranged in multiple stages in the vertical direction. In the substrate processing apparatus of Claim 1 or Claim 2,
  A substrate processing apparatus, further comprising a liquid supply unit that is disposed at a position where the substrate can be transferred to and from the first or second transfer unit and supplies a predetermined liquid to the substrate. The substrate processing apparatus according to claim 3,
  The substrate processing apparatus, wherein the liquid supply units are arranged in multiple stages in the vertical direction. In the substrate processing apparatus of any one of Claims 1-4,
  A substrate processing apparatus, further comprising: an inspection unit that is disposed at a position where the substrate can be transferred to or from the first or second main transport unit and inspects the substrate. The substrate processing apparatus according to claim 5,
  The substrate processing apparatus, wherein the inspection units are arranged in multiple stages in the vertical direction. In the substrate processing apparatus according to claim 5 or 6,
  The substrate processing apparatus, wherein the inspection unit performs micro inspection on the substrate. In the substrate processing apparatus of any one of Claims 1-7,
  The substrate processing apparatus, wherein the processing unit is further arranged on the opposite side of the surface facing the processing unit in the first main transport section. In the substrate processing apparatus of any one of Claims 1-8,
  A substrate processing apparatus, further comprising: a receiving unit that temporarily receives and holds a substrate before and after processing on a side opposite to a surface facing the first or second main transport unit in the processing unit. The substrate processing apparatus according to claim 9,
  The substrate processing apparatus further comprising an inspection unit that is disposed in the receiving unit and inspects the substrate. The substrate processing apparatus according to claim 10, wherein
  The substrate processing apparatus, wherein the inspection unit performs a macro inspection on a substrate.

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