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JP4171564B2 - Photoelectric surface forming evaporation source and X-ray image tube manufacturing method - Google Patents
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JP4171564B2 - Photoelectric surface forming evaporation source and X-ray image tube manufacturing method - Google Patents

Photoelectric surface forming evaporation source and X-ray image tube manufacturing method Download PDF

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JP4171564B2
JP4171564B2 JP33977599A JP33977599A JP4171564B2 JP 4171564 B2 JP4171564 B2 JP 4171564B2 JP 33977599 A JP33977599 A JP 33977599A JP 33977599 A JP33977599 A JP 33977599A JP 4171564 B2 JP4171564 B2 JP 4171564B2
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evaporation source
heating body
photocathode
ray image
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JP2001155634A (en
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慎二 鈴木
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Toshiba Corp
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Toshiba Corp
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Description

【0001】
【発明の属する技術分野】
本発明は、X線イメージ管などの光電面を形成する光電面形成用蒸発源およびこの光電面形成用蒸発源を用いたX線イメージ管の製造方法に関する。
【0002】
【従来の技術】
X線イメージ管は、被写体を透過したX線像を可視光像に変換する電子管で、真空外囲器内の一端にX線を電子に変換する入力部が設けられ、他端に電子を光に変換する出力部が設けられている。X線イメージ管の入力部は、入力基板、および、入力基板上に形成された蛍光面や光電面などから構成されている。光電面は、入力基板上に蛍光面を形成した後に、蒸発源から光電材料を蒸発させ、光電材料を蛍光面上に蒸着させる方法で形成される。
【0003】
この場合、光電材料を蒸発させる蒸発源には、高融点金属ボートに光電材料のアンチモン(Sb)の塊を融着させた構造のもの、あるいは、線状や面状のフィラメントに光電材料のSb膜を被着させた構造のものなどが用いられている(特開平4−209443号公報参照)。
【0004】
ところで、蒸発源を用いて光電面を形成する場合、その方法の1つとして、複数の蒸発源をX線イメージ管内に配置する方法がある。この方法は、蒸発源を構成するフィラメントに電流を流してSbを加熱する。このとき、加熱によってSbが真空中で蒸発し、X線イメージ管の入力基板面に蒸着し、光電面用のSb薄膜が形成される。
【0005】
また、光電面を形成するもう1つの方法として、X線イメージ管内に外部から蒸発源を挿入する方法がある。この方法は、イメージ管内に挿入した蒸発源を管軸上などに配置しSbを加熱する。この場合も、加熱によって蒸発したSbが基板面に蒸着し、基板上に光電面用のSb薄膜を形成する。
【0006】
上記した方法で基板面に蒸着したSb薄膜は、その後、アルカリ金属などとの化合物が形成され、光電面を形成する。このような光電面の形成方法は、X線イメージ管に限らず、撮像管や光電管などの光電面の形成にも用いられている。
【0007】
【発明が解決しようとする課題】
X線イメージ管内に複数の蒸発源を配置する方法は、均一な構造をもつ蒸発源の製造が困難で、また、Sbなど光電材料の量も不均一になりやすく、蒸発源ごとに加熱温度にばらつきが生じる。その結果、光電材料の蒸発速度が蒸発源によって相違し、入力面に蒸着するSbなどの膜厚にむらが発生する。
【0008】
また、蒸発源のフィラメントには、面状や線状の構造のものが用いられている(特開平4−209443号公報参照)。面状フィラメントは、X線イメージ管の管内でフィラメントを支持する部分の温度が下がり、その部分の蒸発速度が低下し、膜厚にむらが発生する。また、面状フィラメントの場合、抵抗値を大きくするために、通常、薄い金属膜が使用される。そのため、管内に設置した際、あるいは、加熱で熱膨張した際に、たわみやねじれが発生しやすい。また、被着したSb膜の膜応力によってフィラメントが変形し、基板面に蒸着するSbの膜厚にむらが発生する。線状フィラメントの場合も、加熱で熱膨張した際に、たわみやねじれが発生しやすい。また、被着したSb膜の膜応力によってフィラメントが変形し、基板面に蒸着されるSbの膜厚にむらが発生する。
【0009】
蒸発源を外部からX線イメージ管内に挿入する方法は、蒸発源として、一般に、高融点金属ボートにSb塊を融着させた構造が多く使用される。この構造は、Sb塊の形状のばらつきを少なくすることが困難で、基板面に蒸着したSb層の膜厚分布にばらつきが発生し易い。また、Sbは、蒸発した場合の指向性がある。そのため、均一なSb層の薄膜を形成するためには、蒸発の指向性を考慮しなければならず、蒸発源を挿入する位置が限られ、また、電極構造の設計が制約される。
【0010】
上記したように、従来の光電面形成用蒸発源およびX線イメージ管の製造方法は、基板面に蒸着されるSbなど光電材料の膜厚分布にむらが発生しやすく、X線イメージ管の輝度の一様性が損なわれるという問題がある。
【0011】
この発明は、上記した欠点を解決し、光電面を構成する光電材料の膜厚分布を均一化し、X線イメージ管の輝度一様性を向上させた光電面形成用蒸発源およびX線イメージ管の製造方法を提供することを目的とする。
【0012】
【発明を解決するための手段】
この発明は、熱を発生する加熱体と、この加熱体の熱で蒸発し光電面を形成する光電材料とを具備した光電面形成用蒸発源において、前記加熱体表面の少なくとも一部の所定領域が、その中心を通る軸に対し対称で、平坦部をもたない曲線の集合によって球面状に形成され、かつ、前記所定領域に光電材料が被着していることを特徴としている。
【0013】
また、この発明のX線イメージ管の製造方法は、表面の少なくとも一部の所定領域が、その中心を通る軸に対し対称で、平坦部をもたない曲線の集合によって球面状に形成され、かつ、前記所定領域に光電材料が被着された加熱体部分を有する蒸発源を、X線イメージ管を構成する真空外囲器内の管軸上に配置する第1工程と、前記加熱体部分を加熱し、前記X線イメージ管の入力基板に前記光電材料を蒸着させる第2工程とからなっている。
【0014】
【発明の実施の形態】
本発明の実施形態について、蒸発源を外部から挿入する場合を例にとり図1を参照して説明する。符号11はX線イメージ管を構成する真空外囲器で、真空外囲器11内の一方の端部に入力部12が設けられ、他方の端部に出力部13が設けられている。入力部12と出力部13の間に集束電極14が配置され、出力部14の近くに陽極15が配置されている。
【0015】
入力部12は、たとえば球面状の入力基板12aおよび入力基板12a上に形成された入力蛍光面12b、入力蛍光面12b上に形成された入力光電面12cなどから構成されている。出力部13は、平坦な出力基板13aおよび出力基板13a上に形成された出力蛍光面13bなどから構成されている。真空外囲器11の側面には導入口16が設けられている。
【0016】
上記した構成のX線イメージ管において、入力基板12a上に入力光電面12cを形成する場合、まず、導入口16を通して真空外囲器11内に蒸発源17が挿入される。蒸発源17は、導入棒18の先端に支持され、たとえば、X線イメージ管の管軸m上で、かつ、球面状入力基板12aの曲率半径の中心付近に配置される。蒸発源17は、球状加熱体17aおよびこの加熱体17aのたとえば上半分の表面に被着されたSb層17bなどから構成されている。
【0017】
次に、真空外囲器11内に挿入された蒸発源17の加熱体17aを加熱し、加熱体17aに被着しているSb層17bを蒸発させる。このとき、蒸発したSbが、たとえば、入力基板12aの入力蛍光面12b上に蒸着し、光電面用のSb薄膜が形成される。
【0018】
次に、Sb薄膜の蒸着が終了すると、蒸発源17が真空外囲器11の外に取り出される。その後、導入口16をチップオフし、真空外囲器11の内部を真空に保てるようする。
【0019】
上記した構成によれば、入力基板12a側に位置する蒸発源17のたとえば上半分の表面が、入力基板12aの表面形状に合わせて、たとえば管軸mに対称な球面状に形成されている。したがって、入力基板12a上にSb薄膜が均一に蒸着し、一様な厚さの膜厚に形成される。
【0020】
ここで、上記の蒸発源17について図2を参照して説明する。図2は、図1に対応する部分には同一の符号を付し、重複する説明を一部省略する。
【0021】
蒸発源17を構成する加熱体17aは、たとえばセラミックヒータで形成され、その表面は曲線の集合、たとえば平坦部をもたない球面に形成されている。加熱体17aの内部には、電流によって熱を発生する抵抗線22が埋め込まれている。抵抗線22の両端に電流端子22a、22bが接続され、電流端子22a、22bは外部に引き出されている。そして、球面に形成された加熱体17aの一部表面、たとえば、図1に示すように、蒸発源17を真空外囲器11内に配置した場合に、入力基板12a側に位置する上半分に、スパッタリング法などでSb層17bが被着されている。
【0022】
なお、加熱体17a上に被着したSb層17bが蒸発し、入力基板12a上に蒸着した後に、加熱体17a表面にSb層17bが残っていると、放電発生やごみ発生の原因になる。そのため、Sb層17bの膜厚は光電面の形成に必要な厚さ、たとえば100μm以下とし、入力基板12a面にSb薄膜の蒸着が終了した段階では、加熱体17a上にSb層17bが残らないようにしている。
【0023】
上記した構成によれば、蒸発源17の表面が入力基板12aの形状と同じ球面状に形成され、かつ、X線イメージ管の管軸上で、球面状の入力基板12aの曲率の中心付近に配置されている。したがって、蒸発源17から蒸発した光電材料が入力基板12a上に均一に蒸着し、光電面を構成するSb薄膜の膜厚分布が均一化する。
【0024】
また、上記の実施形態では、加熱体17aの全表面が球面になっている。しかし、蒸発源17を真空外囲器11内に配置した場合に、入力基板12a側に位置する、たとえば上半分や上半分のその一部だけを球面に構成し、この球面部分にSb層17bを被着した構造にすることもできる。
【0025】
次に、本発明の他の実施形態について、複数の蒸発源をX線イメージ管内に配置する場合を例にとり図3を参照して説明する。図3では、図1に対応する部分には同一の符号を付し、重複する説明を一部省略する。
【0026】
複数の蒸発源17(図では2つの蒸発源171、172が示されている)が、真空外囲器11内で入力基板12aが見える位置、たとえば陽極15の外側に、電極の支持部材31などに支持されて、たとえば1つの円周上に等間隔に配置されている。
【0027】
ところで、真空外囲器11内に複数の蒸発源、たとえば符号171、172を配置する場合、複数の蒸発源171、172は管軸mから偏位した位置に配置される。このため、蒸発源171、172を通る管軸mに平行な軸n1、n2に対し、入力基板12aは、その一方の側が広く、他方の側が狭く、また、蒸発源171、172からの距離も場所によって変化する。このように、入力基板12aは、各蒸発源171、172の軸n1、n2に対して非対称になっている。
【0028】
この場合、Sb層が被着される加熱体の所定領域は、各蒸発源171、172から見た入力基板12aの形状や入力基板12aまでの距離などを考慮し、曲線の集合で形成するとともに、たとえば、その中心部を通る軸n1、n2に対し非対称に形成される。
【0029】
ここで、加熱体部分の表面を軸に対し非対称に形成した蒸発源17について図4を参照して説明する。加熱体17aの表面は、図3に示されるように真空外囲器内に配置した場合に、入力基板12a側に位置するその少なくとも一部の表面が曲線の集合で構成され、かつ、その中心を通る軸nに対して非対称に形成されている。たとえば、入力基板12a側に一番近くに位置する加熱体17a表面の頂点41が軸nから一方の側にずれている。そして、加熱体17aの表面にSb層17bが被着されている。
【0030】
上記した構成の加熱体17aを、図3に示すように真空外囲器内に配置する場合、たとえば、その頂点41部分が、それぞれ蒸発源171、172の軸n1、軸n2よりも外側に位置するようにし、加熱体17a表面のうち、入力基板12aが広く見える側に傾斜する部分の面積が大きくなるようにしている。
【0031】
上記した構成の場合、蒸発源17を構成する加熱体のうち、少なくともSb層が被着される所定領域の表面を曲線の集合で構成し、かつ、その所定領域の表面の形状を、蒸発源17から見た入力基板12aの形状や入力基板12a面までの距離などに合わせて設定している。したがって、入力基板12a上にSb薄膜が均一に蒸着し、一様な厚さの膜厚が形成される。
【0032】
ここで、入力基板上にSb薄膜を形成した場合の膜厚分布の例を図5および図6に示す。図5および図6の縦軸は、入力基板上の中心を原点とした半径方向の距離(mm)、縦軸は入力基板中心の膜厚を100%とした場合の膜厚(%)を示している。θは管軸を中心にした回転角度を示している。
【0033】
図5は、図1に示すように、蒸発源を入力基板面の曲率半径の中心付近に配置した場合で、蒸発源は、通電によって熱を発生する高融点金属ワイヤーを直径8mmの球形セラミック中に埋め込み、その入力基板面側の上半分の面にSb層をスパッタリング法で被着させた構造をしている。
【0034】
図6は、従来の蒸発源を使用した場合で、蒸発源は、ドーナツ状のフィラメントにSb層を被着させた構造をしている。
【0035】
図5と図6を比較して分かるように、発明の方(図5)が、従来の蒸発源(図6)に比べ、半径方向および回転方向ともSb薄膜の膜厚分布が一様化している。したがって、発明の構成によれば、出力像の輝度の一様性が向上し、診断領域が拡大したX線イメージ管が得られる。
【0036】
上記の実施形態では、加熱体としてセラミックヒータを用いている。しかし、加熱体には、高融点金属たとえばMoやTa、W、Ni、Fe、ステンレスなどの板材を利用し、プレス加工などによって、少なくとも一部の表面を曲線の集合からなる曲面に形成し、その1部表面に光電材料を被着した構造のものを用いることもできる。この構造の場合、加熱体に直接電流を流し、表面に被着したSbを蒸発させる。
【0037】
また、上記の実施形態では、加熱体の表面にSb層を直接形成している。しかし、加熱体とSbとの反応を防止する場合、あるいは、Sb層の密着度を向上させる場合は、加熱体上にPtなどの中間層を形成し、その中間層上にSb層を被着させることもできる。
【0038】
上記したように、本発明の構成によれば、蒸発源を構成する加熱体部分のうち、少なくともSb層を被着する領域の表面を曲線の集合で形成している。この場合、蒸発源を配置する位置に合わせ、入力基板上に形成されるSb薄膜の膜厚分布が均一化するように、Sb層が被着する領域の加熱体表面を任意の形状に形成できる。このため、Sb薄膜の膜厚分布が均一化する蒸発源が得られる。
【0039】
また、蒸発源を配置する位置に合わせて、加熱体表面を形成する方法であるため、蒸発源を配置する位置の自由度が大きくなり、蒸発源を支持する電極構造などにも制約が少なくなる。
【0040】
また、蒸発源の加熱体部分を半球状や球状などとし、ある厚さをもった構造を容易に実現できる。そのため、機械的強度が高くなり、膜応力や熱膨張による変形が防止され、蒸発源の変形やねじれ、たわみなどによる膜厚分布のむらが防止される。
【0041】
なお、上記の各実施形態では、入力基板を真空外囲器内に別に設けた構造で説明している。しかし、この発明は、真空外囲器の前面部分に入力部を直接形成する構造に対しても適用できる。
【0042】
【発明の効果】
本発明によれば、光電面を構成する薄膜の膜厚分布が均一化し、輝度の一様性が向上した光電面蒸発源およびX線イメージ管を実現できる。
【図面の簡単な説明】
【図1】本発明の実施形態を説明するための概略の構造図である。
【図2】本発明の実施形態に使用された蒸発源の一例を説明するための概略の構造図である。
【図3】本発明の他の実施形態を説明するための概略の構造図である。
【図4】本発明の他の実施形態に使用された蒸発源の一例を説明するための概略の構造図である。
【図5】本発明の蒸発源を使用した場合のSb薄膜の膜厚分布を示す図である。
【図6】従来の蒸発源を使用した場合のSb薄膜の膜厚分布を示す図である。
【符号の説明】
11…真空外囲器
12…入力部
12a…入力基板
12b…入力蛍光面
12c…入力光電面
13…出力部
13a…出力基板
13b…出力蛍光面
14…集束電極
15…陽極
16…導入口
17…蒸発源
17a…加熱体
17b…Sb層
18…導入棒
m…管軸
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a photocathode forming evaporation source for forming a photocathode such as an X-ray image tube and a method for manufacturing an X-ray image tube using the photocathode forming evaporation source.
[0002]
[Prior art]
An X-ray image tube is an electron tube that converts an X-ray image transmitted through a subject into a visible light image. An input unit for converting X-rays into electrons is provided at one end of the vacuum envelope, and electrons are emitted at the other end. An output unit is provided for converting to. The input unit of the X-ray image tube is composed of an input substrate, a fluorescent screen, a photocathode, and the like formed on the input substrate. The photocathode is formed by a method of forming a phosphor screen on the input substrate, evaporating the photoelectric material from the evaporation source, and depositing the photoelectric material on the phosphor screen.
[0003]
In this case, the evaporation source for evaporating the photoelectric material has a structure in which a mass of antimony (Sb) of the photoelectric material is fused to a refractory metal boat, or Sb of the photoelectric material on a linear or planar filament. A structure in which a film is applied is used (see Japanese Patent Laid-Open No. 4-209443).
[0004]
By the way, when forming a photocathode using an evaporation source, one method is to arrange a plurality of evaporation sources in an X-ray image tube. In this method, Sb is heated by passing an electric current through a filament constituting the evaporation source. At this time, Sb evaporates in a vacuum by heating and is deposited on the input substrate surface of the X-ray image tube to form an Sb thin film for the photocathode.
[0005]
Another method for forming the photocathode is to insert an evaporation source from the outside into the X-ray image tube. In this method, an evaporation source inserted in the image tube is arranged on the tube axis or the like to heat Sb. Also in this case, Sb evaporated by heating is deposited on the substrate surface, and an Sb thin film for the photocathode is formed on the substrate.
[0006]
The Sb thin film deposited on the substrate surface by the above-described method is then formed with a compound such as an alkali metal to form a photocathode. Such a method for forming a photocathode is not limited to an X-ray image tube but is also used to form a photocathode such as an image pickup tube or a phototube.
[0007]
[Problems to be solved by the invention]
In the method of arranging a plurality of evaporation sources in the X-ray image tube, it is difficult to manufacture an evaporation source having a uniform structure, and the amount of photoelectric material such as Sb tends to be non-uniform. Variation occurs. As a result, the evaporation rate of the photoelectric material varies depending on the evaporation source, and unevenness in the film thickness of Sb or the like deposited on the input surface occurs.
[0008]
Further, the filament of the evaporation source has a planar or linear structure (see Japanese Patent Laid-Open No. 4-209443). In the planar filament, the temperature of the portion supporting the filament in the tube of the X-ray image tube is lowered, the evaporation rate of the portion is lowered, and the film thickness is uneven. In the case of a planar filament, a thin metal film is usually used in order to increase the resistance value. Therefore, when it is installed in a pipe or when it is thermally expanded by heating, deflection and twist are likely to occur. Further, the filament is deformed by the film stress of the deposited Sb film, and the film thickness of Sb deposited on the substrate surface is uneven. Even in the case of a linear filament, deflection and twist are likely to occur when it is thermally expanded by heating. Further, the filament is deformed by the film stress of the deposited Sb film, and the film thickness of Sb deposited on the substrate surface is uneven.
[0009]
As a method of inserting an evaporation source from the outside into an X-ray image tube, a structure in which an Sb lump is fused to a refractory metal boat is generally used as the evaporation source. With this structure, it is difficult to reduce the variation in the shape of the Sb block, and the film thickness distribution of the Sb layer deposited on the substrate surface is likely to vary. Further, Sb has directivity when evaporated. Therefore, in order to form a uniform Sb layer thin film, the directivity of evaporation must be considered, the position where the evaporation source is inserted is limited, and the design of the electrode structure is restricted.
[0010]
As described above, the conventional photocathode-forming evaporation source and the X-ray image tube manufacturing method tend to cause unevenness in the film thickness distribution of the photoelectric material such as Sb deposited on the substrate surface, and the brightness of the X-ray image tube. There is a problem that the uniformity of.
[0011]
The present invention solves the above-described drawbacks, makes the film thickness distribution of the photoelectric material constituting the photoelectric surface uniform, and improves the luminance uniformity of the X-ray image tube, and the X-ray image tube evaporation source and X-ray image tube It aims at providing the manufacturing method of.
[0012]
[Means for Solving the Invention]
The present invention provides a photocathode-forming evaporation source comprising a heating body that generates heat and a photoelectric material that is evaporated by the heat of the heating body to form a photocathode. However , it is characterized in that it is formed in a spherical shape by a set of curves that are symmetric with respect to an axis passing through the center and does not have a flat portion , and a photoelectric material is deposited on the predetermined region.
[0013]
Further, in the X-ray image tube manufacturing method of the present invention, at least a predetermined region of the surface is symmetrical with respect to an axis passing through the center thereof, and is formed into a spherical shape by a set of curves having no flat portion . And the 1st process which arrange | positions the evaporation source which has a heating body part with which the photoelectric material was apply | coated to the said predetermined area | region on the tube axis | shaft in the vacuum envelope which comprises an X-ray image tube, The said heating body part And a second step of depositing the photoelectric material on the input substrate of the X-ray image tube.
[0014]
DETAILED DESCRIPTION OF THE INVENTION
The embodiment of the present invention will be described with reference to FIG. 1 by taking the case where an evaporation source is inserted from the outside as an example. Reference numeral 11 denotes a vacuum envelope constituting an X-ray image tube. An input unit 12 is provided at one end of the vacuum envelope 11 and an output unit 13 is provided at the other end. A focusing electrode 14 is disposed between the input unit 12 and the output unit 13, and an anode 15 is disposed near the output unit 14.
[0015]
The input unit 12 includes, for example, a spherical input substrate 12a, an input phosphor screen 12b formed on the input substrate 12a, an input photocathode 12c formed on the input phosphor screen 12b, and the like. The output unit 13 includes a flat output substrate 13a, an output phosphor screen 13b formed on the output substrate 13a, and the like. An introduction port 16 is provided on the side surface of the vacuum envelope 11.
[0016]
In the X-ray image tube having the above-described configuration, when the input photocathode 12c is formed on the input substrate 12a, first, the evaporation source 17 is inserted into the vacuum envelope 11 through the introduction port 16. The evaporation source 17 is supported at the tip of the introduction rod 18, and is disposed, for example, on the tube axis m of the X-ray image tube and near the center of the radius of curvature of the spherical input substrate 12a. The evaporation source 17 is composed of a spherical heating body 17a and an Sb layer 17b deposited on the upper half surface of the heating body 17a, for example.
[0017]
Next, the heating body 17a of the evaporation source 17 inserted into the vacuum envelope 11 is heated to evaporate the Sb layer 17b attached to the heating body 17a. At this time, the evaporated Sb is vapor-deposited on the input fluorescent screen 12b of the input substrate 12a, for example, and an Sb thin film for the photocathode is formed.
[0018]
Next, when the deposition of the Sb thin film is completed, the evaporation source 17 is taken out of the vacuum envelope 11. Thereafter, the introduction port 16 is chipped off so that the inside of the vacuum envelope 11 can be kept in a vacuum.
[0019]
According to the above configuration, the upper half surface of the evaporation source 17 positioned on the input substrate 12a side, for example, is formed in a spherical shape symmetrical to the tube axis m, for example, in accordance with the surface shape of the input substrate 12a. Therefore, the Sb thin film is uniformly deposited on the input substrate 12a to form a uniform thickness.
[0020]
Here, the evaporation source 17 will be described with reference to FIG. In FIG. 2, parts corresponding to those in FIG.
[0021]
The heating body 17a constituting the evaporation source 17 is formed of, for example, a ceramic heater, and the surface thereof is formed of a set of curves, for example, a spherical surface having no flat portion. A resistance wire 22 that generates heat by an electric current is embedded in the heating body 17a. Current terminals 22a and 22b are connected to both ends of the resistance wire 22, and the current terminals 22a and 22b are drawn to the outside. Then, when a part of the surface of the heating body 17a formed on the spherical surface, for example, as shown in FIG. 1, the evaporation source 17 is arranged in the vacuum envelope 11, the upper half located on the input substrate 12a side is formed. The Sb layer 17b is deposited by sputtering or the like.
[0022]
In addition, if the Sb layer 17b deposited on the heating body 17a evaporates and is deposited on the input substrate 12a, and the Sb layer 17b remains on the surface of the heating body 17a, discharge or dust is generated. Therefore, the thickness of the Sb layer 17b is set to a thickness necessary for the formation of the photocathode, for example, 100 μm or less, and the Sb layer 17b does not remain on the heating body 17a when the deposition of the Sb thin film is completed on the input substrate 12a surface. I am doing so.
[0023]
According to the configuration described above, the surface of the evaporation source 17 is formed in the same spherical shape as the shape of the input substrate 12a, and in the vicinity of the center of curvature of the spherical input substrate 12a on the tube axis of the X-ray image tube. Has been placed. Therefore, the photoelectric material evaporated from the evaporation source 17 is uniformly deposited on the input substrate 12a, and the film thickness distribution of the Sb thin film constituting the photoelectric surface is made uniform.
[0024]
Moreover, in said embodiment, the whole surface of the heating body 17a is a spherical surface. However, when the evaporation source 17 is disposed in the vacuum envelope 11, only a part of the upper half or the upper half, for example, located on the input substrate 12a side is formed into a spherical surface, and the Sb layer 17b is formed on the spherical portion. It is also possible to make a structure with a coating.
[0025]
Next, another embodiment of the present invention will be described with reference to FIG. 3 by taking as an example a case where a plurality of evaporation sources are arranged in an X-ray image tube. In FIG. 3, parts corresponding to those in FIG.
[0026]
A plurality of evaporation sources 17 (two evaporation sources 171 and 172 are shown in the figure) are located at a position where the input substrate 12a can be seen in the vacuum envelope 11, for example, outside the anode 15. For example, they are arranged at equal intervals on one circumference.
[0027]
By the way, when a plurality of evaporation sources, for example, reference numerals 171 and 172 are arranged in the vacuum envelope 11, the plurality of evaporation sources 171 and 172 are arranged at positions displaced from the tube axis m. Therefore, the input substrate 12a is wide on one side and narrow on the other side with respect to the axes n1 and n2 parallel to the tube axis m passing through the evaporation sources 171 and 172, and the distance from the evaporation sources 171 and 172 is also small. Varies by location. Thus, the input substrate 12a is asymmetric with respect to the axes n1 and n2 of the respective evaporation sources 171 and 172.
[0028]
In this case, the predetermined region of the heating body to which the Sb layer is deposited is formed as a set of curves in consideration of the shape of the input substrate 12a viewed from each of the evaporation sources 171 and 172, the distance to the input substrate 12a, and the like. For example, they are formed asymmetrically with respect to the axes n1 and n2 passing through the central portion.
[0029]
Here, the evaporation source 17 in which the surface of the heating portion is formed asymmetrically with respect to the axis will be described with reference to FIG. When the surface of the heating element 17a is arranged in a vacuum envelope as shown in FIG. 3, at least a part of the surface located on the input substrate 12a side is constituted by a set of curves, and the center thereof. Is formed asymmetrically with respect to an axis n passing through. For example, the apex 41 of the surface of the heating body 17a located closest to the input substrate 12a side is shifted from the axis n to one side. And the Sb layer 17b is adhere | attached on the surface of the heating body 17a.
[0030]
When the heating body 17a having the above-described configuration is disposed in the vacuum envelope as shown in FIG. 3, for example, the apex 41 portion is positioned outside the axes n1 and n2 of the evaporation sources 171 and 172, respectively. Thus, the area of the portion of the surface of the heating body 17a that is inclined toward the side where the input substrate 12a can be seen is increased.
[0031]
In the case of the configuration described above, among the heating elements constituting the evaporation source 17, at least the surface of the predetermined region to which the Sb layer is deposited is configured by a set of curves, and the shape of the surface of the predetermined region is determined by the evaporation source. 17 is set according to the shape of the input board 12a viewed from 17 and the distance to the surface of the input board 12a. Therefore, the Sb thin film is uniformly deposited on the input substrate 12a to form a film having a uniform thickness.
[0032]
Here, FIG. 5 and FIG. 6 show examples of the film thickness distribution when the Sb thin film is formed on the input substrate. 5 and 6, the vertical axis indicates the radial distance (mm) with the center on the input substrate as the origin, and the vertical axis indicates the film thickness (%) when the film thickness at the center of the input substrate is 100%. ing. θ represents a rotation angle around the tube axis.
[0033]
FIG. 5 shows a case where the evaporation source is arranged near the center of the radius of curvature of the input substrate surface as shown in FIG. 1, and the evaporation source is a refractory metal wire that generates heat by energization in a spherical ceramic having a diameter of 8 mm. And an Sb layer is deposited by sputtering on the upper half surface of the input substrate surface.
[0034]
FIG. 6 shows a case where a conventional evaporation source is used, and the evaporation source has a structure in which an Sb layer is deposited on a donut-shaped filament.
[0035]
As can be seen by comparing FIG. 5 and FIG. 6, the thickness distribution of the Sb thin film is uniform in the radial direction and the rotational direction in the invention (FIG. 5) compared to the conventional evaporation source (FIG. 6). Yes. Therefore, according to the configuration of the invention, it is possible to obtain an X-ray image tube in which the uniformity of the luminance of the output image is improved and the diagnostic region is enlarged.
[0036]
In the above embodiment, a ceramic heater is used as the heating body. However, the heating element uses a plate material such as refractory metal such as Mo, Ta, W, Ni, Fe, and stainless steel, and at least a part of the surface is formed into a curved surface consisting of a set of curves by pressing or the like. A structure in which a photoelectric material is deposited on the surface of one part can also be used. In the case of this structure, a current is directly applied to the heating body to evaporate Sb deposited on the surface.
[0037]
In the above embodiment, the Sb layer is directly formed on the surface of the heating body. However, in order to prevent the reaction between the heating body and Sb or to improve the adhesion of the Sb layer, an intermediate layer such as Pt is formed on the heating body, and the Sb layer is deposited on the intermediate layer. It can also be made.
[0038]
As described above, according to the configuration of the present invention, at least the surface of the region where the Sb layer is to be deposited is formed by a set of curves in the heating element portion constituting the evaporation source. In this case, the surface of the heating body in the region where the Sb layer is deposited can be formed in an arbitrary shape so that the film thickness distribution of the Sb thin film formed on the input substrate is made uniform according to the position where the evaporation source is arranged. . For this reason, an evaporation source in which the film thickness distribution of the Sb thin film becomes uniform can be obtained.
[0039]
In addition, since the heating body surface is formed in accordance with the position where the evaporation source is disposed, the degree of freedom in the position where the evaporation source is disposed is increased, and the electrode structure supporting the evaporation source is less restricted. .
[0040]
In addition, a structure having a certain thickness can be easily realized by using a heating element portion of the evaporation source as a hemisphere or a sphere. Therefore, the mechanical strength is increased, deformation due to film stress or thermal expansion is prevented, and unevenness of the film thickness distribution due to deformation, twisting, or deflection of the evaporation source is prevented.
[0041]
In each of the above-described embodiments, a description is given of a structure in which the input substrate is separately provided in the vacuum envelope. However, the present invention can also be applied to a structure in which the input portion is formed directly on the front surface portion of the vacuum envelope.
[0042]
【The invention's effect】
According to the present invention, it is possible to realize a photocathode evaporation source and an X-ray image tube in which the film thickness distribution of the thin film constituting the photocathode is made uniform and the luminance uniformity is improved.
[Brief description of the drawings]
FIG. 1 is a schematic structural diagram for explaining an embodiment of the present invention.
FIG. 2 is a schematic structural diagram for explaining an example of an evaporation source used in an embodiment of the present invention.
FIG. 3 is a schematic structural diagram for explaining another embodiment of the present invention.
FIG. 4 is a schematic structural diagram for explaining an example of an evaporation source used in another embodiment of the present invention.
FIG. 5 is a diagram showing a film thickness distribution of an Sb thin film when the evaporation source of the present invention is used.
FIG. 6 is a diagram showing a film thickness distribution of an Sb thin film when a conventional evaporation source is used.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 11 ... Vacuum envelope 12 ... Input part 12a ... Input board 12b ... Input fluorescent screen 12c ... Input photoelectric surface 13 ... Output part 13a ... Output board 13b ... Output fluorescent screen 14 ... Focusing electrode 15 ... Anode 16 ... Inlet 17 ... Evaporation source 17a ... heating element 17b ... Sb layer 18 ... introduction rod m ... tube axis

Claims (6)

熱を発生する加熱体と、この加熱体の熱で蒸発し光電面を形成する光電材料とを具備した光電面形成用蒸発源において、前記加熱体表面の少なくとも一部の所定領域が、その中心を通る軸に対し対称で、平坦部をもたない曲線の集合によって球面状に形成され、かつ、前記所定領域に光電材料が被着していることを特徴とする光電面形成用蒸発源。In a photocathode-forming evaporation source comprising a heating body that generates heat and a photoelectric material that evaporates with the heat of the heating body to form a photocathode, a predetermined region of at least a part of the surface of the heating body has its center An evaporation source for forming a photocathode characterized in that it is formed in a spherical shape by a set of curves that are symmetrical with respect to an axis passing through and does not have a flat portion , and a photoconductive material is deposited on the predetermined region. 光電材料が、この光電材料とは相違する材料の中間層を介して加熱体の表面に被着している請求項1記載の光電面形成用蒸発源。 The evaporation source for forming a photocathode according to claim 1 , wherein the photoelectric material is deposited on the surface of the heating body via an intermediate layer made of a material different from the photoelectric material . 光電材料がアンチモン(Sb)で、膜厚が100μm以下である請求項1記載の光電面形成用蒸発源。The photoelectron-forming evaporation source according to claim 1 , wherein the photoelectric material is antimony (Sb) and the film thickness is 100 μm or less . 加熱体の内部に、通電によって熱を発生する金属ワイヤーが埋め込まれている請求項1記載の光電面形成用蒸発源。 The evaporation source for photocathode formation according to claim 1, wherein a metal wire that generates heat when energized is embedded in the heating body . 加熱体が、通電によって熱を発生する金属抵抗体で構成されている請求項1記載の光電面形成用蒸発源。The evaporation source for photocathode formation according to claim 1 , wherein the heating body is composed of a metal resistor that generates heat when energized . 表面の少なくとも一部の所定領域が、その中心を通る軸に対し対称で、平坦部をもたない曲線の集合によって球面状に形成され、かつ、前記所定領域に光電材料が被着された加熱体部分を有する蒸発源を、X線イメージ管を構成する真空外囲器内の管軸上に配置する第1工程と、前記加熱体部分を加熱し、前記X線イメージ管の入力基板に前記光電材料を蒸着させる第2工程とからなるX線イメージ管の製造方法。A heating process in which at least a part of a predetermined region of the surface is formed in a spherical shape by a set of curves that are symmetrical with respect to an axis passing through the center and does not have a flat portion, and a photoelectric material is deposited on the predetermined region A first step of disposing an evaporation source having a body part on a tube axis in a vacuum envelope constituting an X-ray image tube; heating the heating body part; A method for producing an X-ray image tube comprising a second step of evaporating a photoelectric material.
JP33977599A 1999-11-30 1999-11-30 Photoelectric surface forming evaporation source and X-ray image tube manufacturing method Expired - Fee Related JP4171564B2 (en)

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