JP4174257B2

JP4174257B2 - Vacuum deposition method

Info

Publication number: JP4174257B2
Application number: JP2002218624A
Authority: JP
Inventors: 泰輔西森; 泰生岸; 行廣近藤; 淳二城戸; 雄二柳; 栄一松本; 牧　　修治
Original assignee: Tokki Corp; Matsushita Electric Works Ltd
Current assignee: Panasonic Electric Works Co Ltd; Canon Tokki Corp
Priority date: 2002-07-26
Filing date: 2002-07-26
Publication date: 2008-10-29
Anticipated expiration: 2022-07-26
Also published as: JP2004059981A

Description

【０００１】
【発明の属する技術分野】
本発明は、真空雰囲気で蒸着材料を蒸発させると共に被蒸着体に蒸発物質を蒸着させるようにした真空蒸着方法に関するものである。
【０００２】
【従来の技術】
真空蒸着装置は、真空チャンバー内に蒸着材料と被蒸着体とを配置し、真空チャンバー内を減圧した状態で、蒸着材料を加熱して蒸発させ、この蒸発させた物質を被蒸着体の表面に堆積させることによって蒸着を行なうようにしたものである。そして蒸発源の蒸着材料から蒸発した物質は蒸発源から法線方向に直進的に放出されるが、放出空間は真空に保たれているため蒸発物質は直進し、蒸発源と対向して配置される被蒸着体の表面に付着して蒸着される。
【０００３】
しかしこのように蒸発物質は蒸発源から法線方向に直進的に放出されるので、被蒸着体へ向かって進行しない蒸発物質が多く、このように被蒸着体へ向かって進行しない蒸発物質は被蒸着体の表面に付着しないものであり、蒸着の歩留まりが低くなると共に被蒸着体の表面への蒸着速度が遅くなるという問題がある。そこで、特開平４−４５２５９号公報や特開平９−２７２７０３号公報などに開示されているように、真空チャンバー内に配置した蒸発源の蒸着材料と被蒸着体が対向する空間を筒状体で囲むと共に筒状体を蒸着材料が再蒸発される温度で加熱し、蒸発源から蒸発した物質を筒状体内を通して被蒸着体の表面に蒸着させるようにした真空蒸着装置が提案されている。
【０００４】
図６はその一例を示すものであり、真空チャンバー１内に上下に開口する筒状体４が配設してあり、筒状体４にはヒーター１６が巻いてあって筒状体４を加熱できるようにしてある。この筒状体４の下端の開口部１７に面して蒸着材料２が配置してあり、ヒーター１８で加熱して蒸着材料２を蒸発させることができるようにしてある。筒状体４の上端の開口部５の上方には被蒸着体３が配置してあり、この開口部５はシャッター１９によって開閉できるようにしてある。
【０００５】
このものにあって、真空チャンバー１内を減圧すると共に蒸着材料２を加熱して蒸発させ、そしてシャッター１９を開くと、蒸着材料２から蒸発した物質が筒状体４内を飛翔して通過し、筒状体４の上端の開口部５を通って被蒸着体３の表面に付着し、被蒸着体３に蒸着材料２の蒸発物質を堆積させて蒸着を行なうことができるものである。そしてこのものでは、蒸着材料２と被蒸着体３が対向する空間が筒状体４で囲まれているので、蒸着材料２から発生する蒸発物質を筒状体４内に囲った状態で、この蒸発物質を筒状体４の内面で反射させながら被蒸着体３の方向へ進ませることができ、蒸着材料２から発生する蒸発物質の多くを被蒸着体３の表面に到達させることができるものであり、被蒸着体３に付着せずに逃げる量を少なくして歩留まり高く蒸着を行なうことができるものである。また筒状体４はヒーター１６で加熱されており、蒸発物質が筒状体４の内面に付着しても再加熱されて再蒸発し、この再蒸発した物質は被蒸着体３に到達して蒸着層を形成するものであり、筒状体４に蒸発物質が堆積して歩留まりが低下することを防ぐことができるものである。
【０００６】
【発明が解決しようとする課題】
上記のように、筒状体４の基部内に配置した蒸着材料２を蒸発させると共に蒸発物質を筒状体４内を飛翔させ、筒状体４の上端の開口部５に対面させて配置した被蒸着体３に、飛翔させた蒸発物質を開口部５を通して付着させることよって、蒸着を行なうことができる。そしてこのものにあって、被蒸着体３の表面の全面に蒸着を行なう場合、筒状体４の開口部５のエリア内に入るように被蒸着体３を配置する必要がある。従って、筒状体４の開口部５の大きさは被蒸着体３の面積よりも大きく形成する必要があり、例えば被蒸着体３が一辺２００ｍｍ以上の大きさの板材である場合、筒状体４の開口部５はこれ以上に大きく形成しなければならない。
【０００７】
ここで、筒状体４の基部内に配置した蒸着材料２から蒸発した蒸発物質は筒状体４内を飛翔して開口部５に至るが、開口部５を通過する蒸発物質の濃度の分布は均一ではなく、開口部５の中央部、特に蒸着材料２が配置された箇所に対応する部分で蒸発物質の濃度は高くなり、開口部５の周辺部では蒸発物質の濃度は低くなる。そして筒状体４の開口部５の面積が小さいときは、中央部と周辺部での蒸発物質の濃度の分布の不均一はさほど大きくならず、特に問題になることはないが、開口部５が一辺２００ｍｍ以上のように大きな面積になると、開口部５の中央部を通過する蒸発物質と周辺部を通過する蒸発物質の濃度の差が大きく発生し、この結果、被蒸着体３に蒸着される蒸着膜の膜厚が、中央部では厚く、周辺部では薄くなるというように、蒸着膜厚が不均一になるという問題が生じるものであった。
【０００８】
本発明は上記の点に鑑みてなされたものであり、大きな面積の被蒸着体に均一な膜厚で蒸着を行なうことができる真空蒸着方法を提供することを目的とするものである。
【０００９】
【課題を解決するための手段】
本発明の請求項１に係る真空蒸着方法は、真空チャンバー１内に蒸着材料２及び被蒸着体３を配置すると共に蒸着材料２と被蒸着体３との間に蒸着材料２が蒸発される温度で内面が加熱された筒状体４を配置し、蒸着材料２を加熱して蒸発させ、蒸発させた物質を筒状体４内から筒状体４の開口部５を通して被蒸着体３の表面に到達させることによって、被蒸着体３の表面に蒸着材料２を蒸着するにあたって、蒸着材料２と開口部５との間において、筒状体４内に蒸着材料２が蒸発した物質の開口部５側への移動を制御する制御部材８を設け、制御部材８として、蒸着材料２に近い側に配置され、蒸着材料２から蒸発した物質が通過する通孔９を設けた孔開き板１０と、開口部５に近い側に配置され、開口部５の長辺５ａ側の各内面に対向して張り出して設けられる一対の障害板１１，１１とを用い、各障害板１１，１１の対向する先端間の間隙１２の幅が開口部５の長辺５ａの中央部ほど幅狭になると共に端部ほど幅広になるように形成し、筒状体４の開口部５を長辺５ａと短辺５ｂからなる矩形に形成し、一辺の長さが開口部５の長辺５ａより短く且つ短辺５ｂの長さより長い大きさの被蒸着体３を、筒状体４の開口部５の短辺５ｂと平行に移動させて開口部５を横切らせることによって、被蒸着体３の開口部５に対向させた側の表面に蒸着を行なうことを特徴とするものである。
【００１０】
また請求項２の発明は、請求項１において、被蒸着体３は一辺が２００ｍｍ以上の略正方形の板材であることを特徴とするものである。
【００１１】
また請求項３の発明は、請求項１又は２において、筒状体４の蒸着材料２がセットされる基部の寸法よりも、筒状体４の先端の開口部５の短辺５ｂの寸法を小さくすることによって、開口部５の面積を筒状体４の基部の面積よりも小さく形成したことを特徴とするものである。
【００１４】
【発明の実施の形態】
以下、本発明の実施の形態を説明する。
【００１５】
図１は本発明を説明する参考例を示すものであり、真空チャンバー１の側面にはゲートバルブ２２を介して真空ポンプ２３が接続してある。真空チャンバー１内には筒状体４が配置してある。筒状体４は上面が開口部５となった四角筒形状に形成されるものであり、その外周にはシーズヒーターなどのヒーター２１を巻いて、筒状体４を加熱することができるようにしてある。筒状体４の底面の中央部には坩堝２４がはめ込んで取り付けてあり、坩堝２４に蒸着材料２が充填してある。坩堝２４には蒸着材料２を加熱するヒーター２５が内蔵してあり、この加熱温度は熱電対などで形成される温度センサー２６で検知することができるようにしてある。また筒状体４の側壁には側面開口部２７が形成してあり、この側面開口部２７内に面するように膜厚計２８が取り付けてある。膜厚計２８は水晶振動子膜厚計などで形成されるものであり、表面に蒸着して付着される膜の膜厚を自動計測することができるものである。
【００１６】
ここで、四角筒状に形成される筒状体４にあって、その上端の開口部５は長辺５ａと短辺５ｂを有する矩形（長方形）に形成してある。ガラス基板などで形成される被蒸着体３は一般に略正方形であり、開口部５の長辺５ａは被蒸着体３の一辺より長く形成され、開口部５の短辺５ｂは被蒸着体３の一辺より短い寸法に形成されるものである。開口部５の短辺５ｂは長辺５ａの１／２〜１／４程度であるのが好ましい。被蒸着体３として一辺が２００ｍｍ以上（好ましくは３００ｍｍ以上、上限は特にないが実用上は１ｍ）である面積が大きいものを用いる場合でも、開口部５の面積は被蒸着体３の１／２〜１／４程度に形成することができるものである。
【００１７】
また、筒状体４の上方には被蒸着体３を水平に送る搬送手段が設けてある。搬送手段は例えば図２に示すように、水平に配置される一対の搬送レール３０及び搬送治具３１で形成されるものであり、各搬送レール３０は図２（ｂ）（（ａ）を上から見た図）に示すように筒状体４の一方の側方から筒状体４の近縁を横切って筒状体４の他方の側方へ至るように配設してあり、この一対の搬送レール３０，３０間に架け渡して搬送治具３１が設けてある。搬送治具３１は搬送レール３０，３０の間の位置において蒸着用開口部３２を設けて枠状に形成されるものであり、筒状体４の一方の側方から筒状体４の開口部５の上方を横切って筒状体４の他方の側方へ至る範囲で、搬送レール３０を移動するようにしてある。ガラス板などで形成される被蒸着体３は、下面を蒸着用開口部３２に臨ませた状態でこの搬送治具３１の上に図２（ａ）のように載置してセットされるものであり、搬送治具３１を筒状体４の側方位置から筒状体４の開口部５の直上位置に移動させたときに、蒸着を行なうことができるようにしてある。
【００１８】
しかして、上記のように形成される真空蒸着装置を用いて、ガラス基板などの被蒸着体３に蒸着材料２を蒸着するにあたっては、まず、真空ポンプ２３を作動させて真空チャンバー１内を真空状態に減圧すると共にヒーター２１を発熱させて筒状体４を加熱しておく。筒状体４の加熱温度は、蒸着材料２の蒸発物質が筒状体４の内面に付着しても再度蒸発し、筒状体４の内面に堆積しない温度に設定されるものである。またヒーター２５を加熱して坩堝２４内の蒸着材料２を蒸発させ、蒸発物質を筒状体４内に飛翔させる。
【００１９】
そして、図２（ａ）のように被蒸着体３を搬送治具３１の上に載置し、搬送軸具３１を搬送レール３０に沿って移動させることによって、図１（ａ）（ｂ）の実線位置から鎖線位置へと、被蒸着体３を筒状体４の一方の側方位置から筒状体４の開口部５の直上位置に移動させ、さらに開口部５の直上を通過させて被蒸着体３を筒状体４の他方の側方位置に移動させる。このように開口部５の直上位置を横切って被蒸着体３を通過させる際に、蒸着材料２からの蒸発物質が開口部５を通して被蒸着体３の開口部５に対向する下面に付着し、蒸着材料２を被蒸着体３の下面に堆積させて蒸着させることができるものである。被蒸着体３を筒状体４の開口部５を横切らせて蒸着を行なうにあたって、開口部５を横切らせて通過させる回数に応じて蒸着の膜厚を調整することができるものであり、被蒸着体３を一方向へ搬送して開口部５を横切らせる他に、往復方向へ搬送したり、複数回往復方向へ搬送して開口部５を横切らせることもできる。
【００２０】
このとき、被蒸着体３は筒状体４の開口部５の長辺５ａの範囲内の位置を、開口部５の短辺５ｂと平行な方向に移動させて、開口部５の直上を横切って通過するようにしてあり、被蒸着体３は下面の全面が開口部５の直上を横切ることになるので、被蒸着体３の下面の全面に蒸着材料２を蒸着させることができるものである。ここで、被蒸着体３が一辺２００ｍｍ以上の大きな面積を有するものでも、筒状体４の開口部５を上記のように長辺５ａと短辺５ｂからなる矩形に形成することによって、開口部５の面積を小さいものに形成することができるものであり、筒状体４の基部内の蒸着材料２が蒸発した蒸発物質が開口部５を通過する際の中央部と周辺部との濃度の差は小さい。従って被蒸着体３の全面に対して均一な濃度で蒸発物質は蒸着されるものであり、均一な膜厚で蒸着を行なうことができるものである。
【００２１】
図３は本発明を説明する他の参考例を示すものである。図１の参考例では、筒状体４を基部から上端の開口部５に至るまで同じ内径のストレート形状に形成したが、図３の参考例の形態では、筒状体４の蒸着材料２がセットされる基部の寸法よりも、筒状体４の上端の開口部５の短辺５ｂの寸法を小さくして、開口部５の面積が筒状体４の基部の面積よりも小さくなるように形成してある。開口部５の短辺５ｂの寸法Ｗ_１は筒状体４の基部の幅寸法Ｗ_２の１／２〜１／４程度で、蒸発物質が飛翔する流れの抵抗に影響を与えないくらいが好ましい。開口部５の長辺５ａの寸法は筒状体４の基部の寸法と同じであり、従って、筒状体４の上部は長辺５ａの側の面が内側へ向けて斜め上方へ傾斜するように内径を絞った形状に形成されるものである。その他の構成は図１や図２のものと同じである。
【００２２】
図３のものでは、このように筒状体４の上端の開口部５の短辺５ｂの寸法を筒状体４の基部の寸法より小さくすることによって、開口部５の開口面積をより小さくすることができるものである。従って、加熱された筒状体４では、開口部５を通して筒状体４の内壁から輻射熱が上方へ放散されているが、開口部５の開口面積をより小さくすることによって、この輻射熱の放散を低減することができるものであり、被蒸着体３が輻射熱で加熱されることを低減し、被蒸着体３の温度が蒸着材料の蒸発温度や分解温度にまで加熱されて、蒸着効率が低下することを防ぐことができるものである。
【００２３】
図４は本発明の実施の形態を示すものであり、筒状体４の底部にセットした蒸着材料２と筒状体４の上端の開口部５との間において、筒状体４内に蒸着材料２が蒸発した物質が開口部５側へと飛翔して移動する際の、飛翔経路を制御する制御部材８が設けてある。この制御部材８としては、蒸着材料２の直ぐ上に配置される孔開き板１０と、開口部５の直ぐ下に配置される障害板１１とを用いるものである。
【００２４】
孔開き板１０は図５（ａ）に示すように、中央部よりも周辺部のほうに多く分布するように多数の通孔９を設けて形成してあり、筒状体４の下端部内を上下に仕切るように筒状体４の内面に取り付けてある。また障害板１１は図５（ｂ）のように、開口部５の長辺５ａ側の各内面に対向して張り出して一対設けられるものであり、障害板１１，１１の対向する先端間に間隙１２が形成してある。そして各障害板１１の先端縁を中央部程張り出すように形成することによって、障害板１１，１１の先端間の間隙１２の幅が開口部５の長辺５ａに沿った中央部ほど幅狭になると共に端部ほど幅広になるように形成してある。その他の構成は図１乃至３のものと同じである。
【００２５】
この図４のものにあって、蒸着材料２は筒状体４の底部の中央部にセットされているので、蒸着材料２が蒸発した蒸発物質は筒状体４の底部の中央部を蒸発源として飛翔するが、蒸発材料２の直上に設けた孔開き板１０に遮られ、孔開き板１０に多数設けられた各通孔９を通過して、孔開き板１０の上側に飛翔する。ここで、通孔９は中央部よりも周辺部のほうに多く分布するように形成してあるので、坩堝２４から蒸発物質が直線的に放出されてそのまま被蒸着体３に向かうことを抑制することができるものである。さらにこの飛翔した蒸発物質は障害板１１に遮られ、障害板１１間の間隙１２を通過して上方へ飛翔するが、間隙１２は開口部５の長辺５ａに沿った中央部ほど幅狭で且つ端部ほど幅広に形成されているので、端部のほうへ広げられながら間隙１２を通過する。このようにして、蒸発物質の濃度が開口部５の中央部が高く周辺部で低くならないようにして、開口部５を通過する蒸発物質の濃度を開口部５の全面において均一にすることができるものであり、被蒸着体３への蒸着の膜厚を一層均一化することができるものである。
【００２６】
【発明の効果】
上記のように本発明の請求項１に係る真空蒸着方法は、真空チャンバー内に蒸着材料及び被蒸着体を配置すると共に蒸着材料と被蒸着体との間に蒸着材料が蒸発される温度で内面が加熱された筒状体を配置し、蒸着材料を加熱して蒸発させ、蒸発させた物質を筒状体内から筒状体の開口部を通して被蒸着体の表面に到達させることによって、被蒸着体の表面に蒸着材料を蒸着するにあたって、筒状体の開口部を長辺と短辺からなる矩形に形成し、一辺の長さが開口部の長辺より短く且つ短辺の長さより長い大きさの被蒸着体を、筒状体の開口部の短辺と平行に移動させて開口部を横切らせることによって、被蒸着体の開口部に対向させた側の表面に蒸着を行なうようにしたので、被蒸着体が大きな面積を有するものであっても、小さい面積で筒状体の開口部を形成することができ、開口部内における蒸発物質の濃度差は小さくなるものであって、被蒸着体の全面に対して均一な濃度で蒸発物質を蒸着させて、均一な膜厚で蒸着を行なうことができるものである。
また蒸着材料と開口部との間において、筒状体内に蒸着材料が蒸発した物質の開口部側への移動を制御する制御部材を設けたので、開口部を通過する蒸発物質の濃度を制御部材で均一化することができ、被蒸着体への蒸着の膜厚をより一層均一にすることができるものである。
さらに制御部材として、蒸着材料に近い側に配置され、蒸着材料から蒸発した物質が通過する通孔を設けた孔開き板と、開口部に近い側に配置され、開口部の長辺側の各内面に対向して張り出して設けられる一対の障害板とを用い、各障害板の対向する先端間の間隙の幅が開口部の長辺の中央部ほど幅狭になると共に端部ほど幅広になるように形成したので、開口部を通過する蒸発物質の濃度を制御部材で均一化することができ、被蒸着体への蒸着の膜厚をより一層均一にすることができるものである。
【００２７】
また請求項２の発明は、請求項１において、被蒸着体は一辺が２００ｍｍ以上の略正方形の板材であることを特徴とするものであり、このような面積の大きい被蒸着体であっても、小さい面積の開口部を有する筒状体を用いて、被蒸着体の全面に均一な膜厚で蒸着を行なうことができるものである。
【００２８】
また請求項３の発明は、請求項１又は２において、筒状体の蒸着材料がセットされる筒状体の基部の寸法よりも、筒状体の先端の開口部の短辺を小さくすることによって、開口部の面積を筒状体の基部の面積よりも小さく形成したので、開口部の開口面積をより小さくして、開口部から輻射熱が放散されることを低減することができるものであり、被蒸着体の温度が輻射熱による加熱で蒸着材料の蒸発温度や分解温度にまで上昇することを防止でき、蒸着効率が低下することを防ぐことができるものである。
【図面の簡単な説明】
【図１】本発明を説明する参考例を示すものであり、（ａ）は正面断面図、（ｂ）は一部の平面図である。
【図２】同上の参考例を示すものであり、（ａ）は一部の正面断面図、（ｂ）は一部の平面図である。
【図３】本発明を説明する他の参考例を示すものであり、（ａ）は正面断面図、（ｂ）は一部の平面図である。
【図４】本発明の実施の形態の一例を示すものであり、（ａ）は正面断面図、（ｂ）は一部の平面図である。
【図５】同上の制御部材を示すものであり、（ａ）は図４（ａ）のイ−イ線断面図、（ｂ）は図４（ａ）のロ−ロ線断面図である。
【図６】従来例の断面図である。
【符号の説明】
１真空チャンバー
２蒸着材料
３被蒸着体
４筒状体
５開口部
５ａ長辺
５ｂ短辺
８制御部材
９通孔
１０孔開き板
１１障害板
１２間隙[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a vacuum deposition method in which a deposition material is evaporated in a vacuum atmosphere and an evaporation substance is deposited on a deposition target.
[0002]
[Prior art]
The vacuum deposition apparatus arranges a deposition material and a deposition target in a vacuum chamber, heats and evaporates the deposition material in a state where the vacuum chamber is depressurized, and this evaporated substance is deposited on the surface of the deposition target. Vapor deposition is performed by depositing. The substance evaporated from the evaporation material of the evaporation source is discharged straight from the evaporation source in the normal direction, but the evaporation space is kept in a vacuum, so the evaporation substance goes straight and is placed facing the evaporation source. It is deposited on the surface of the deposition target.
[0003]
However, since the evaporated substance is released straight from the evaporation source in the normal direction, there are many evaporated substances that do not travel toward the deposition target, and the evaporated substances that do not travel toward the deposition target are There is a problem that it does not adhere to the surface of the vapor-deposited body, and the yield of vapor deposition becomes low and the vapor deposition rate on the surface of the vapor-deposited body becomes slow. Therefore, as disclosed in Japanese Patent Laid-Open Nos. 4-45259 and 9-272703, a space in which the vapor deposition material of the evaporation source disposed in the vacuum chamber and the vapor deposition target face each other is a cylindrical body. There has been proposed a vacuum vapor deposition apparatus that surrounds and heats the cylindrical body at a temperature at which the vapor deposition material is re-evaporated, and deposits the substance evaporated from the evaporation source on the surface of the deposition target through the cylindrical body.
[0004]
FIG. 6 shows an example of this, and a cylindrical body 4 that opens up and down is disposed in the vacuum chamber 1, and a heater 16 is wound around the cylindrical body 4 to heat the cylindrical body 4. I can do it. The vapor deposition material 2 is disposed facing the opening 17 at the lower end of the cylindrical body 4 and can be heated by the heater 18 to evaporate the vapor deposition material 2. The vapor-deposited body 3 is arranged above the opening 5 at the upper end of the cylindrical body 4, and the opening 5 can be opened and closed by a shutter 19.
[0005]
In this case, when the inside of the vacuum chamber 1 is decompressed and the vapor deposition material 2 is heated and evaporated, and the shutter 19 is opened, the substance evaporated from the vapor deposition material 2 flies through the cylindrical body 4 and passes through. The vapor deposition material 2 is deposited on the surface of the vapor-deposited body 3 through the opening 5 at the upper end of the cylindrical body 4, and the vapor-deposited material 2 is deposited on the vapor-deposited body 3 for vapor deposition. And in this thing, since the space where the vapor deposition material 2 and the to-be-deposited body 3 oppose is surrounded by the cylindrical body 4, in the state which enclosed the evaporation substance generated from the vapor deposition material 2 in the cylindrical body 4, The evaporation substance can be advanced toward the deposition target 3 while being reflected by the inner surface of the cylindrical body 4, and most of the evaporation substance generated from the deposition material 2 can reach the surface of the deposition target 3. Thus, it is possible to perform vapor deposition with a high yield by reducing the amount of escape without adhering to the vapor-deposited body 3. The cylindrical body 4 is heated by the heater 16, and even if the evaporated substance adheres to the inner surface of the cylindrical body 4, it is reheated and re-evaporates, and the re-evaporated substance reaches the deposition target 3. A vapor deposition layer is formed, and it is possible to prevent the yield from being lowered due to the evaporation material being deposited on the cylindrical body 4.
[0006]
[Problems to be solved by the invention]
As described above, the vapor deposition material 2 disposed in the base of the cylindrical body 4 is evaporated and the evaporated substance is allowed to fly through the cylindrical body 4 so as to face the opening 5 at the upper end of the cylindrical body 4. Vapor deposition can be performed by adhering the flying evaporated substance to the deposition target 3 through the opening 5. And in this thing, when vapor-depositing on the whole surface of the to-be-deposited body 3, it is necessary to arrange | position the to-be-deposited body 3 so that it may enter in the area of the opening part 5 of the cylindrical body 4. FIG. Therefore, the size of the opening 5 of the cylindrical body 4 needs to be larger than the area of the deposition target 3. For example, when the deposition target 3 is a plate material having a side of 200 mm or more, the cylindrical body The opening 4 of 4 must be formed larger than this.
[0007]
Here, the evaporated substance evaporated from the vapor deposition material 2 disposed in the base portion of the cylindrical body 4 flies through the cylindrical body 4 to reach the opening 5, but the concentration distribution of the evaporated substance passing through the opening 5. Is not uniform, and the concentration of the evaporating substance is high in the central portion of the opening 5, particularly the portion corresponding to the place where the vapor deposition material 2 is disposed, and the concentration of the evaporating substance is low in the peripheral portion of the opening 5. And when the area of the opening part 5 of the cylindrical body 4 is small, the uneven distribution of the concentration of the evaporating substance in the central part and the peripheral part does not become so large, and there is no particular problem. However, when the area becomes larger than 200 mm on a side, there is a large difference in concentration between the evaporating substance passing through the central part of the opening 5 and the evaporating substance passing through the peripheral part. As a result, the film thickness of the deposited film becomes thick at the center and thin at the peripheral part.
[0008]
The present invention has been made in view of the above points, and an object of the present invention is to provide a vacuum vapor deposition method capable of performing vapor deposition with a uniform film thickness on a large area deposition target.
[0009]
[Means for Solving the Problems]
In the vacuum vapor deposition method according to claim 1 of the present invention, the vapor deposition material 2 and the vapor-deposited body 3 are arranged in the vacuum chamber 1 and the vaporization material 2 is evaporated between the vapor deposition material 2 and the vapor-deposited body 3. The cylindrical body 4 whose inner surface is heated is disposed, the vapor deposition material 2 is heated and evaporated, and the evaporated substance is exposed from the cylindrical body 4 through the opening 5 of the cylindrical body 4 to the surface of the deposition target 3. When the vapor deposition material 2 is vapor-deposited on the surface of the body 3 to be vapor-deposited , the opening 5 of the substance in which the vapor deposition material 2 has evaporated in the cylindrical body 4 is disposed between the vapor deposition material 2 and the opening 5. A control member 8 for controlling the movement to the side, a perforated plate 10 provided as a control member 8 on the side close to the vapor deposition material 2 and provided with a through hole 9 through which a substance evaporated from the vapor deposition material 2 passes; It is disposed on the side close to the opening 5 and faces each inner surface of the opening 5 on the long side 5a side. A pair of obstacle plates 11, 11 provided in a projecting manner are used, and the width of the gap 12 between the opposing tips of each obstacle plate 11, 11 becomes narrower toward the center of the long side 5 a of the opening 5 and the end portion The opening 5 of the cylindrical body 4 is formed in a rectangular shape having a long side 5a and a short side 5b, and the length of one side is shorter than the long side 5a of the opening 5 and the short side 5b. The vapor deposition body 3 having a length longer than the length of the cylindrical body 4 is moved in parallel with the short side 5b of the opening 5 of the cylindrical body 4 to cross the opening 5 so as to face the opening 5 of the vapor deposition body 3. Vapor deposition is performed on the surface on the side that has been allowed to pass.
[0010]
The invention of claim 2 is characterized in that, in claim 1, the vapor-deposited body 3 is a substantially square plate having a side of 200 mm or more.
[0011]
Further, the invention of claim 3 is the invention according to claim 1 or 2, wherein the dimension of the short side 5b of the opening 5 at the tip of the cylindrical body 4 is larger than the dimension of the base part on which the vapor deposition material 2 of the cylindrical body 4 is set. By making it small, the area of the opening 5 is formed smaller than the area of the base of the cylindrical body 4.
[0014]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below.
[0015]
FIG. 1 shows a reference example for explaining the present invention. A vacuum pump 23 is connected to a side surface of a vacuum chamber 1 through a gate valve 22. A cylindrical body 4 is disposed in the vacuum chamber 1. The cylindrical body 4 is formed in a square cylindrical shape with the upper surface being the opening 5, and a heater 21 such as a sheathed heater is wound around the outer periphery so that the cylindrical body 4 can be heated. It is. A crucible 24 is fitted and attached to the center of the bottom surface of the cylindrical body 4, and the vapor deposition material 2 is filled in the crucible 24. The crucible 24 has a built-in heater 25 for heating the vapor deposition material 2, and the heating temperature can be detected by a temperature sensor 26 formed by a thermocouple or the like. A side opening 27 is formed on the side wall of the cylindrical body 4, and a film thickness meter 28 is attached so as to face the side opening 27. The film thickness meter 28 is formed by a quartz oscillator film thickness meter or the like, and can automatically measure the film thickness of the film deposited on the surface.
[0016]
Here, in the cylindrical body 4 formed in a square cylindrical shape, the opening 5 at the upper end thereof is formed in a rectangle (rectangular shape) having a long side 5a and a short side 5b. The vapor deposition target 3 formed of a glass substrate or the like is generally substantially square, the long side 5a of the opening 5 is formed longer than one side of the vapor deposition target 3, and the short side 5b of the opening 5 is the length of the vapor deposition target 3. It is formed in a dimension shorter than one side. The short side 5b of the opening 5 is preferably about 1/2 to 1/4 of the long side 5a. Even when an object having a large area with a side of 200 mm or more (preferably 300 mm or more, although there is no upper limit, but practically 1 m) is used as the deposition target 3, the area of the opening 5 is 1/2 that of the deposition target 3. It can be formed to about ¼.
[0017]
In addition, a conveying unit that horizontally feeds the deposition target 3 is provided above the cylindrical body 4. For example, as shown in FIG. 2, the conveying means is formed by a pair of horizontally arranged conveying rails 30 and a conveying jig 31. Each conveying rail 30 is shown in FIGS. 2B and 2A. As shown in FIG. 3, the cylindrical body 4 is arranged so as to cross from the one side of the cylindrical body 4 to the other side of the cylindrical body 4 across the close edge of the cylindrical body 4. A conveyance jig 31 is provided between the conveyance rails 30 and 30. The conveyance jig 31 is formed in a frame shape by providing a vapor deposition opening 32 at a position between the conveyance rails 30, 30, and the opening of the cylindrical body 4 from one side of the cylindrical body 4. The transport rail 30 is moved within a range that crosses the upper side of 5 and reaches the other side of the cylindrical body 4. The object to be deposited 3 formed of a glass plate or the like is set by placing it on the conveying jig 31 as shown in FIG. 2A with the lower surface facing the deposition opening 32. Thus, when the conveying jig 31 is moved from the lateral position of the cylindrical body 4 to a position immediately above the opening 5 of the cylindrical body 4, vapor deposition can be performed.
[0018]
Thus, when depositing the deposition material 2 on the deposition target 3 such as a glass substrate using the vacuum deposition apparatus formed as described above, first, the vacuum pump 23 is operated to evacuate the interior of the vacuum chamber 1. The cylindrical body 4 is heated by reducing the pressure to a state and causing the heater 21 to generate heat. The heating temperature of the cylindrical body 4 is set to a temperature at which the evaporation substance of the vapor deposition material 2 evaporates again even if it adheres to the inner surface of the cylindrical body 4 and does not accumulate on the inner surface of the cylindrical body 4. Further, the heater 25 is heated to evaporate the vapor deposition material 2 in the crucible 24, and the evaporated substance is allowed to fly into the cylindrical body 4.
[0019]
Then, as shown in FIG. 2A, the deposition target 3 is placed on the transport jig 31, and the transport shaft 31 is moved along the transport rail 30, so that FIGS. From the solid line position to the chain line position, the vapor-deposited body 3 is moved from one side position of the cylindrical body 4 to a position immediately above the opening 5 of the cylindrical body 4 and further passed directly above the opening 5. The vapor-deposited body 3 is moved to the other side position of the cylindrical body 4. Thus, when passing the deposition target 3 across the position directly above the opening 5, the evaporated substance from the deposition material 2 adheres to the lower surface facing the opening 5 of the deposition target 3 through the opening 5, The vapor deposition material 2 can be deposited by being deposited on the lower surface of the deposition target 3. When performing vapor deposition by crossing the opening 3 of the tubular body 4 across the opening 5 of the cylindrical body 4, the film thickness of the vapor deposition can be adjusted according to the number of times of passing the opening 5 across the opening 5. In addition to transporting the vapor deposition body 3 in one direction and crossing the opening 5, it is also possible to transport it in the reciprocating direction, or transport it in the reciprocating direction a plurality of times to cross the opening 5.
[0020]
At this time, the deposition target 3 moves the position within the range of the long side 5 a of the opening 5 of the cylindrical body 4 in a direction parallel to the short side 5 b of the opening 5 and crosses directly above the opening 5. Since the entire lower surface of the deposition target 3 crosses directly above the opening 5, the deposition material 2 can be deposited on the entire lower surface of the deposition target 3. . Here, even if the body 3 to be deposited has a large area of 200 mm or more per side, the opening 5 of the cylindrical body 4 is formed into a rectangle composed of the long side 5a and the short side 5b as described above, thereby opening the opening. 5 can be formed into a small area, and the concentration of the evaporation material 2 evaporated from the evaporation material 2 in the base of the cylindrical body 4 through the opening 5 can be reduced. The difference is small. Therefore, the evaporated substance is deposited at a uniform concentration on the entire surface of the deposition target 3 and can be deposited with a uniform film thickness.
[0021]
FIG. 3 shows another reference example for explaining the present invention. In reference example of FIG. 1, although the tubular body 4 is formed in a straight shape having the same inner diameter from the base up to the opening 5 at the upper end, in the form of a reference example of FIG. 3, the vapor deposition material 2 of the tubular body 4 The dimension of the short side 5b of the opening 5 at the upper end of the tubular body 4 is made smaller than the dimension of the base to be set so that the area of the opening 5 becomes smaller than the area of the base of the tubular body 4. It is formed. Dimension W ₁ of the short side 5b of the opening 5 is about 1 / 2-1 / 4 of the width W ₂ of the base of the tubular body 4, preferably much evaporation material does not affect the flow resistance of flying is . The dimension of the long side 5a of the opening 5 is the same as the dimension of the base part of the cylindrical body 4, so that the upper surface of the cylindrical body 4 is inclined obliquely upward with the surface on the long side 5a side inward. It is formed in a shape with a narrowed inner diameter. Other configurations are the same as those in FIGS. 1 and 2.
[0022]
In the case of FIG. 3, the opening area of the opening 5 is made smaller by making the size of the short side 5 b of the opening 5 at the upper end of the tube 4 smaller than the size of the base of the tube 4 in this way. It is something that can be done. Therefore, in the heated tubular body 4, radiant heat is radiated upward from the inner wall of the tubular body 4 through the opening 5. However, by reducing the opening area of the opening 5, this radiation heat is radiated. It can reduce, and it reduces that the to-be-deposited body 3 is heated by a radiant heat, and the temperature of the to-be-deposited body 3 is heated even to the evaporation temperature and decomposition temperature of vapor deposition material, and vapor deposition efficiency falls. This can be prevented.
[0023]
Figure 4 shows the implementation of the embodiment of the present invention, between the opening 5 of the upper end of the vapor deposition material 2 and the tubular body 4 which was set at the bottom of the tubular body 4, the cylindrical body 4 A control member 8 is provided for controlling a flight path when the substance evaporated from the vapor deposition material 2 flies and moves toward the opening 5 side. As the control member 8, a perforated plate 10 disposed immediately above the vapor deposition material 2 and an obstacle plate 11 disposed immediately below the opening 5 are used.
[0024]
As shown in FIG. 5 (a), the perforated plate 10 is formed by providing a large number of through holes 9 so as to be distributed more in the peripheral part than in the central part, and in the lower end part of the cylindrical body 4. It has attached to the inner surface of the cylindrical body 4 so that it may partition up and down. Further, as shown in FIG. 5B, a pair of obstacle plates 11 are provided so as to be opposed to each inner surface on the long side 5a side of the opening 5, and a gap is provided between the front ends of the obstacle plates 11 and 11 facing each other. 12 is formed. Then, by forming the leading edge of each obstacle plate 11 so as to protrude toward the center, the width of the gap 12 between the tips of the obstacle plates 11, 11 becomes narrower toward the center along the long side 5 a of the opening 5. And the end portion is formed to be wider. Other configurations are the same as those in FIGS.
[0025]
4, since the vapor deposition material 2 is set at the center of the bottom of the cylindrical body 4, the evaporated substance from which the vapor deposition material 2 has evaporated is disposed at the center of the bottom of the cylindrical body 4 as an evaporation source. However, it is blocked by the perforated plate 10 provided immediately above the evaporating material 2, passes through each of the through holes 9 provided in the perforated plate 10, and flies to the upper side of the perforated plate 10. Here, since the through-holes 9 are formed so as to be distributed more in the peripheral part than in the central part, it is possible to prevent the evaporated substance from being discharged linearly from the crucible 24 and directed to the deposition target 3 as it is. It is something that can be done. Further, the flying evaporation material is blocked by the obstacle plate 11 and passes upward through the gap 12 between the obstacle plates 11, but the gap 12 is narrower in the central portion along the long side 5 a of the opening 5. And since it is formed so as to be wider toward the end, it passes through the gap 12 while being expanded toward the end. In this way, the concentration of the evaporating substance passing through the opening 5 can be made uniform over the entire surface of the opening 5 so that the concentration of the evaporating substance is not high at the center of the opening 5 and low at the periphery. Thus, the film thickness of the vapor deposition on the deposition target 3 can be made more uniform.
[0026]
【The invention's effect】
As described above, the vacuum vapor deposition method according to claim 1 of the present invention is arranged such that the vapor deposition material and the vapor deposition target are disposed in the vacuum chamber and the vapor deposition material is evaporated between the vapor deposition material and the vapor deposition target. By placing a heated cylindrical body, heating and evaporating the vapor deposition material, and allowing the evaporated substance to reach the surface of the vapor deposition body from the cylindrical body through the opening of the cylindrical body. When vapor-depositing the vapor deposition material on the surface of the tube, the opening of the cylindrical body is formed in a rectangular shape having a long side and a short side, and the length of one side is shorter than the long side of the opening and longer than the short side. The vapor deposition body was moved in parallel with the short side of the opening of the cylindrical body to cross the opening, so that the vapor deposition was performed on the surface on the side facing the opening of the vapor deposition body. Even if the deposition target has a large area, An opening of the solid body can be formed, and the concentration difference of the evaporated substance in the opening is small, and the evaporated substance is vapor-deposited at a uniform concentration on the entire surface of the deposition target, thereby forming a uniform film. Vapor deposition can be performed with a thickness.
Further, since a control member for controlling the movement of the substance evaporated by the vapor deposition material to the opening side is provided between the vapor deposition material and the opening, the concentration of the evaporated substance passing through the opening is controlled by the control member. The film thickness of vapor deposition onto the deposition target can be made even more uniform.
Furthermore, as a control member, it is arranged on the side close to the vapor deposition material, a perforated plate provided with a through hole through which the substance evaporated from the vapor deposition material passes, and arranged on the side close to the opening, each of the long side of the opening Using a pair of obstruction plates provided so as to be opposed to the inner surface, the width of the gap between the opposing tips of each obstruction plate becomes narrower at the center of the long side of the opening and wider at the end. Since it formed in this way, the density | concentration of the evaporating substance which passes an opening part can be equalize | homogenized by a control member, and the film thickness of vapor deposition to a to-be-deposited body can be made still more uniform.
[0027]
The invention of claim 2 is characterized in that, in claim 1, the deposition target is a substantially square plate having a side of 200 mm or more. By using a cylindrical body having an opening having a small area, vapor deposition can be performed with a uniform film thickness on the entire surface of the deposition target.
[0028]
Further, the invention of claim 3 is that in claim 1 or 2, the short side of the opening at the tip of the cylindrical body is made smaller than the dimension of the base of the cylindrical body on which the vapor deposition material of the cylindrical body is set. Since the opening area is smaller than the area of the base portion of the cylindrical body, the opening area of the opening section can be made smaller and radiation heat can be prevented from being dissipated from the opening section. In addition, it is possible to prevent the temperature of the deposition target from rising to the evaporation temperature or decomposition temperature of the vapor deposition material due to heating by radiant heat, and to prevent the vapor deposition efficiency from decreasing.
[Brief description of the drawings]
FIG. 1 shows a reference example for explaining the present invention , in which (a) is a front sectional view and (b) is a partial plan view.
FIGS. 2A and 2B show a reference example of the above, in which FIG. 2A is a partial front sectional view, and FIG. 2B is a partial plan view.
FIG. 3 shows another reference example for explaining the present invention , in which (a) is a front sectional view and (b) is a partial plan view.
[Figure 4] shows one example of implementation of the embodiment of the present invention, (a) is a front sectional view, (b) is part of a plan view.
5A and 5B show the control member of the above, where FIG. 5A is a cross-sectional view taken along the line II of FIG. 4A, and FIG. 5B is a cross-sectional view taken along the line of FIG.
FIG. 6 is a cross-sectional view of a conventional example.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Vacuum chamber 2 Vapor deposition material 3 To-be-deposited body 4 Cylindrical body 5 Opening part 5a Long side 5b Short side 8 Control member 9 Through-hole 10 Perforated plate 11 Obstacle plate 12 Gap

Claims

A vapor deposition material and a vapor-deposited body are disposed in the vacuum chamber, and a cylindrical body whose inner surface is heated at a temperature at which the vapor deposition material is evaporated is disposed between the vapor deposition material and the vapor-deposited body, and the vapor deposition material is heated. By evaporating and evaporating the evaporated material from the cylindrical body through the opening of the cylindrical body to the surface of the deposition target, when depositing the deposition material on the surface of the deposition target , In the meantime, a control member for controlling the movement of the substance evaporated from the vapor deposition material to the opening side is provided in the cylindrical body, and is disposed on the side close to the vapor deposition material as the control member, and the substance evaporated from the vapor deposition material passes therethrough. Using a perforated plate provided with a through hole and a pair of obstacle plates that are arranged on the side close to the opening and are provided so as to face each inner surface on the long side of the opening, each obstacle plate faces each other. The width of the gap between the tips is the center of the long side of the opening As the width formed to be wider as the end with becomes narrow, the opening of the tubular body is formed in a rectangular consisting long and short sides, and a side length of less than the long side of the opening short By moving the deposition target with a size longer than the length of the side parallel to the short side of the opening of the cylindrical body and crossing the opening, the surface on the side facing the opening of the deposition target A vacuum vapor deposition method characterized by performing vapor deposition.

The vacuum deposition method according to claim 1, wherein the deposition target is a substantially square plate having a side of 200 mm or more.

By making the short side of the opening at the tip of the cylindrical body smaller than the size of the base of the cylindrical body on which the vapor deposition material of the cylindrical body is set, the area of the opening is made smaller than the area of the base of the cylindrical body The vacuum deposition method according to claim 1, wherein the vacuum deposition method is smaller.