JP4177917B2 - Method for manufacturing gas discharge display device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a gas discharge display device, and more particularly to the structure of an AC gas discharge display device having a three-electrode surface discharge structure.
[0002]
[Prior art]
A gas discharge display device such as a plasma display performs display by self-emission, and thus has a wide viewing angle and is easy to see. In addition, it has features such as the ability to produce a thin type and a large screen, and its application to display devices for information terminal equipment and high-definition television receivers has begun. Plasma displays are roughly classified into a direct current drive type and an alternating current drive type. Among them, the AC drive type plasma display has a high brightness due to the memory action of the dielectric layer covering the electrodes, and a lifetime that can be practically used can be obtained by forming a protective layer. As a result, the plasma display has been put into practical use as a versatile video monitor.
[0003]
FIG. 4 is a perspective view showing the structure of a plasma display panel put into practical use. In this figure, the front substrate 100 is shown separated from the rear substrate 200 and the discharge space region 300 for easy viewing.
[0004]
The front substrate 100 includes a display electrode 600 made of a transparent electrode material such as ITO (Indium Tin Oxide) and tin oxide (SnO2), a bus electrode 700 made of a low resistance material, and a dielectric made of a transparent insulating material. The body layer 800 and the protective layer 900 made of a material such as magnesium oxide (MgO) are formed.
[0005]
The back substrate 200 has a structure in which address electrodes 1000, barrier ribs 1100, and a phosphor layer 1200 are formed on a back glass substrate 500.
[0006]
The discharge space region 300 is formed between the front substrate 100 and the rear substrate 200 by bonding the front substrate 100 and the rear substrate 200 so that the display electrodes 600 and the address electrodes 1000 are substantially orthogonal to each other.
[0007]
In this gas discharge display device, an alternating voltage is applied between a pair of display electrodes 600 provided on the front substrate 100, and a voltage is applied between the address electrodes 1000 and the display electrodes 600 provided on the rear substrate 200. To generate an address discharge and a main discharge in a predetermined discharge cell. The red, green, and blue phosphors 1200 separately applied to the respective discharge cells are caused to emit light by the ultraviolet rays generated by the main discharge, thereby performing display.
[0008]
A conventional example of such a gas discharge display device is described, for example, on pages 208 to 215 of a flat panel display 1996 (edited by Nikkei Microdevice, 1995).
[0009]
The barrier rib 1100 is formed by printing and baking the barrier rib material to a predetermined height, and then forming the desired shape using sandblasting or the like, so that a dielectric layer 1300 (not shown) is formed on the address electrode 1000 as shown in FIG. Is generally formed. That is, the dielectric layer 1300 generally protects the address electrode 1000 during sandblasting.
[0010]
[Problems to be solved by the invention]
However, when the dielectric layer 1300 is formed, unbalanced charges that cannot be reset due to a discharge phenomenon between the address electrode 1000 and the display electrode 600 accumulate on the surface of the dielectric layer 1300 on the address electrode 1000. This causes problems such as latch-up and accidental abnormal discharge in the subsequent discharge phenomenon. This latch-up and accidental abnormal discharge is unlikely to occur when the discharge cell space is relatively large, but it is extremely difficult to completely prevent even if the drive conditions and the dimensions of each component are optimized. This phenomenon becomes a big problem because the cell space is narrow in a high-definition panel such as 25-inch XGA or SXGA.
[0011]
For this reason, in Japanese Patent Laid-Open No. 10-64434, a very small amount of a fine metal having a particle size of 10 μm or less or its oxide is placed in a dielectric layer 1300 in a very small amount so as to release accumulated charges.
[0012]
However, it is difficult to disperse the fine metal particles having the same particle size and fineness in the dielectric layer 1300. For example, if the metal particles are too fine, the metal particles aggregate to form huge particles, causing a short circuit between adjacent address electrodes 1000. Moreover, since the reactivity is so high that it burns even in the air depending on the kind of metal, it is necessary to manage in an inert atmosphere, resulting in an increase in cost.
[0013]
Further, in order to release the above-mentioned accumulated charge, the dielectric layer 1300 may be formed by sputtering or vapor deposition to form the dielectric layer 1300 thin. However, the step of the address electrode 1000 with respect to the glass substrate 500 is different. Therefore, the thinner the layer, the worse the coverage of the dielectric layer 1300 with respect to the address electrode 1000, and there will be a portion that is not covered by the dielectric layer.
[0014]
An object of the present invention is to provide a gas discharge display device in which a dielectric layer on an address electrode is thin enough to release accumulated charges, and at least the entire surface of the address electrode arranged in the display area is covered with the dielectric layer. Is to provide.
[0015]
[Means for Solving the Problems]
In order to achieve the above object, the present invention provides a first substrate having a plurality of first electrodes and a partition wall disposed between the first electrodes, and arranged so as to intersect the first electrodes. And a second substrate having a plurality of second electrodes, wherein the first electrode is submerged and disposed in a dielectric layer.
[0016]
By forming the first electrode so as to be submerged in the dielectric layer in this way, it becomes less susceptible to the step difference of the first electrode relative to the glass substrate and improves the coverage of the dielectric layer relative to the first electrode. Can be made. In addition, if the first electrode is formed so as to be submerged in the dielectric layer, the dielectric layer on the address electrode can be formed thin enough to release the stored charge, so that the discharge surface of the address electrode can be stored on the stored charge. And at least the entire electrode disposed in the display region can be covered with a dielectric layer.
[0017]
In addition, by covering the surface of the first electrode with a dielectric layer, damage during sandblasting can be suppressed and accumulated charges can be released, so that a gas discharge display device in which disconnection or abnormal discharge is suppressed is provided. It becomes possible. Further, unlike the prior art, metal powder is not mixed into the dielectric layer and accumulated charges are not released, so there is no problem such as a short circuit between adjacent electrodes.
[0018]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
[0019]
FIG. 1 is a cross-sectional view of a gas discharge display device to which the present invention is applied.
[0020]
In the figure, 1 is a back glass substrate, 2 is an address electrode, 3 is a partition, 4 is a phosphor layer, 5 is a protective layer such as MgO, 6 is a dielectric layer (front surface), and 7 is Ag for lowering resistance. A bus electrode which is an opaque electrode such as Cr / Cu / Cr, 8 is a display electrode such as ITO, 9 is a front glass substrate, and 10 is a dielectric layer (back). Note that a plurality of electrodes composed of the bus electrode 7 and the display electrode 8 are arranged substantially in parallel (not shown), and two adjacent electrodes (X electrode, Y electrode) are paired, and One discharge cell is formed by the intersecting address electrodes 2. A plurality of discharge cells are arranged in the vertical and horizontal directions and arranged in a matrix.
[0021]
By the way, in this embodiment, as can be seen from the figure, the address electrode 2 is disposed in the dielectric layer (back surface) 10 and the surface of the address electrode 2 is thinly coated with the dielectric layer 10. It has become.
[0022]
The dielectric layer 10 covering the surface of the address electrode 2 is used to suppress sandblast damage when the partition wall 3 is formed and to release the accumulated charge accumulated on the surface of the dielectric layer 10 to the address electrode 2. The thickness is 10 to 1 μm.
[0023]
As a result, it is possible to suppress the damage of the sandblast when forming the partition wall and to suppress the disconnection of the address electrode. Further, since the accumulated charge accumulated on the surface of the dielectric layer 10 is likely to leak to the address electrode 2, abnormal discharge caused by excess accumulated charge can be suppressed.
[0024]
Next, FIG. 7 shows the relationship between the external connection terminal of the address electrode 2 and the dielectric layer 3 before the partition 3 is formed. The external connection terminal is a connection portion with an external circuit.
[0025]
As can be seen from the figure, the dielectric layer 10 is formed not only in the display area but also in a range that covers the external connection terminals. Therefore, the entire surface of the address electrode 2 including the external connection terminal is covered with the dielectric layer 10, and the oxidation reaction in the address electrode 2 is suppressed and the reliability is improved. Further, in this case, the connection to the external circuit may be performed using a conductive sheet 23 made of conductive particles 21 and thermoplastic resin 22 as shown in FIG. That is, the dielectric layer 10 covering the surface of the external connection terminal of the address electrode 2 may be electrically connected to the terminal of the external circuit 20 so as to be broken by the conductive particles contained in the conductive sheet 23.
[0026]
Hereinafter, the formation of the glass layer (dielectric layer 10), the electrode pattern, the partition material, and the like is described in the manufacturing process using the printing method. Each material is applied by a coater, or a dry film is adhered by a laminator. A manufacturing process may be used in which each pattern is formed using a photolithography method if necessary.
[0027]
Next, FIG. 6 shows a manufacturing process of the structure shown in FIG. FIG. 6 shows a case where the address electrode is formed of both a thin film electrode and a thick film electrode. Further, the process up to the formation of the partition on the dielectric layer is shown.
[0028]
First, as the dielectric layer (back surface) 10, for example, a glass layer having a softening point of 600 ° C. or lower is printed and baked (step 1). Next, an Ag electrode is printed as an address electrode 2 on the fired glass layer (dielectric layer 10) to form a desired electrode pattern (step 2).
[0029]
Next, the printed Ag electrode (address electrode 2) is fired (step 3), and at the same time, the Ag electrode (address electrode 2) is submerged in the underlying glass layer (dielectric layer 10) (step 4). . The reason why the Ag electrode (address electrode 2) sinks into the underlying glass layer (dielectric layer 10) in this way is that the surface and the inside of the printed and formed Ag electrode (address electrode 2) are generally rough. It is considered that the softening of the underlying glass layer (dielectric layer 10) is absorbed by the rough portion. Therefore, the address electrode is not limited to Ag, and a similar structure can be used even when Ni, Cu, Al, or the like is used.
[0030]
When the surface of the Ag electrode (address electrode 2) is sufficiently covered with the base glass layer (dielectric layer 10) and electrode formation is completed in the base glass layer (dielectric layer 10) (step 5), the partition material is then set to a predetermined value. After printing (step 6) and firing (step 7), it is processed into a desired shape by sandblasting (step 8). At this time, since the surface of the Ag electrode (address electrode 2) is covered with the glass layer (dielectric layer 10), damage to the Ag electrode due to sandblasting can be suppressed.
[0031]
In this process, the firing temperature is higher than the softening point temperature of the glass layer (dielectric layer 10) in order to sink the Ag electrode (address electrode 2) into the underlying glass layer (dielectric layer 10). And the base glass layer (dielectric layer 10) is in a softened state. Therefore, the dielectric layer 10 needs to be in the range of the softening point temperature not less than the firing start temperature of the metal constituting the address electrode and not more than the firing completion temperature. Further, since the partition wall 3 formed on the dielectric layer 10 is also formed by firing, the dielectric layer 10 must have a softening point not lower than the firing temperature of the partition wall 3 so as not to be softened when the partition wall 3 is fired. .
[0032]
Next, when the address electrode 2 is formed of a thin film electrode such as Cr / Cu / Cr, Cr / Al / Cr, Cr / Cu, Cr / Al, it is as follows. First, as the dielectric layer (back surface) 10, For example, a glass layer having a softening point of 600 ° C. or lower is printed and baked (step 1), and Cr / Cu / Cr is used as a material for the address electrode 2 on the baked glass layer (dielectric layer 10). Films are formed in order so as to be stacked (step 9). Next, a mask or the like for forming a desired electrode pattern is formed, and a desired electrode pattern is formed by etching using the mask (step 10).
[0033]
Next, although the surface and the inside of the formed Cr / Cu / Cr electrode are not rough as compared with the above-mentioned thick film electrode, it is softened by heating after forming a desired thin film electrode (step 11). As a result, the dielectric layer 10 wets and spreads on the electrode surface (step 12), and as a result, the thin dielectric layer 10 is formed on the surface of the address electrode 2 and has a structure as shown in the figure (step 13). Thereafter, the partition wall material is printed at a predetermined height (step 14), fired (step 15), and then processed into a desired shape by sandblasting (step 16). Also at this time, since the surface of the Cr / Cu / Cr electrode (address electrode 2) is covered with the glass layer (dielectric layer 10), damage to the Cr / Cu / Cr electrode due to sandblasting can be suppressed.
[0034]
In addition, after the Cr / Cu / Cr electrode pattern is formed (step 10), the partition wall material is printed at a predetermined height (step 17) and fired (step 18), and the electrode is formed by the softened dielectric layer 10 The surface may be wetted and spread (step 19). When the thin dielectric layer 10 is formed on the surface of the address electrode 2 (step 20), it is processed into a desired shape by sandblasting or the like (step 21). Also at this time, since the surface of the Cr / Cu / Cr electrode (address electrode 2) is covered with the glass layer (dielectric layer 10), damage to the Cr / Cu / Cr electrode due to sandblasting can be suppressed.
[0035]
When the address electrode 2 is a thin film electrode, the underlying glass layer (dielectric layer 10) has a flatness of 100 nm or less and a glass material with a softening point that is low enough to wet and spread on the surface before the address electrode 2 is oxidized. Furthermore, it is desirable that the glass material does not react with the address electrode 2 when the partition walls 3 are fired.
[0036]
Next, FIG. 9 shows a manufacturing process other than the manufacturing process shown in FIG. The case where the address electrode is formed by both the thin film electrode and the thick film electrode as in FIG. 6 is shown, and the process until the partition is formed on the dielectric layer is shown.
[0037]
First, a manufacturing process when the address electrode 2 is a thick film electrode will be described.
[0038]
First, as the dielectric layer (back surface) 10, for example, a glass layer having a softening point of 600 ° C. or lower is printed and baked (step 101).
[0039]
Next, an Ag electrode is printed as an address electrode 2 on the baked glass layer (dielectric layer 10) to form a desired electrode pattern (step 102).
[0040]
Next, the printed Ag electrode (address electrode 2) is fired (step 103).
[0041]
At the same time, the Ag electrode (address electrode 2) is submerged in the underlying glass layer (dielectric layer 10) (step 104).
[0042]
The reason why the Ag electrode (address electrode 2) sinks into the underlying glass layer (dielectric layer 10) in this way is that the surface and the inside of the printed and formed Ag electrode (address electrode 2) are generally rough. It is considered that the softening of the underlying glass layer (dielectric layer 10) is absorbed by the rough portion. Therefore, the address electrode is not limited to Ag, and a similar structure can be used even when Ni, Cu, Al, or the like is used.
[0043]
The electrode surface of the Ag electrode (address electrode 2) is sufficiently covered with the base glass layer (dielectric layer 10), and the electrode formation is completed in the base glass layer (dielectric layer 10) (step 105).
[0044]
Next, the partition wall material is printed at a predetermined height (step 106).
[0045]
Then, it is dried (step 107).
[0046]
Processing into a desired shape by sandblasting or the like (step 108).
[0047]
At this time, since the electrode surface of the Ag electrode (address electrode 2) is covered with the glass layer (dielectric layer 10), damage to the Ag electrode due to sandblasting can be suppressed.
[0048]
Thereafter, firing is performed (step 109).
[0049]
In this process, since the Ag electrode (address electrode 2) is submerged in the underlying glass layer (dielectric layer 10), the firing temperature of the Ag electrode is higher than the softening point temperature of the glass layer (dielectric layer 10). And the base glass layer (dielectric layer 10) is in a softened state. Therefore, the range of the softening point temperature of the dielectric layer 10 needs to be not less than the firing start temperature of the metal constituting the address electrode and not more than the firing completion temperature.
[0050]
Further, since the partition wall 3 formed on the dielectric layer 10 is also formed by firing, the dielectric layer 10 must have a softening point not lower than the firing temperature of the partition wall 3 so as not to be softened when the partition wall 3 is fired. .
[0051]
Next, a manufacturing process when the address electrode 2 is a thin film electrode will be described.
[0052]
When the address electrode 2 is formed of a thin film electrode such as Cr / Cu / Cr, Cr / Al / Cr, Cr / Cu, or Cr / Al, it is as follows.
[0053]
First, as the dielectric layer (back surface) 10, for example, a glass layer having a softening point of 600 ° C. or lower is printed and baked (step 101).
[0054]
On the fired glass layer (dielectric layer 10), a film is sequentially formed so that Cr / Cu / Cr is laminated as the address electrode 2 (step 110).
[0055]
Next, a mask or the like for forming a desired electrode pattern is formed, and a desired electrode pattern is formed by etching using the mask (step 110).
[0056]
Next, although the surface and the inside of the formed Cr / Cu / Cr electrode are not rough as compared with the above-mentioned thick film electrode, they are heated after forming a desired thin film electrode (step 112).
[0057]
As a result, the softened dielectric layer 10 wets and spreads on the electrode surface, and the electrode sinks into the dielectric layer 10 (step 113).
[0058]
As a result, a thin dielectric layer 10 is formed on the surface of the address electrode 2, and a structure as shown in FIG. 1 is obtained. That is, the electrode surface of the Cr / Cu / Cr electrode is sufficiently covered with the base glass layer (dielectric layer 10), and the electrode formation is completed in the base glass layer (dielectric layer 10) (step 114).
[0059]
Next, the partition wall material is printed at a predetermined height (step 115).
[0060]
Then, it is dried (step 116).
[0061]
Processing into a desired shape by sandblasting or the like (step 117).
[0062]
At this time, since the electrode surface of the Cr / Cu / Cr electrode (address electrode 2) is covered with the glass layer (dielectric layer 10), damage to the electrode due to sandblasting can be suppressed.
[0063]
Thereafter, firing is performed (step 118).
[0064]
In this process, the temperature applied to sink the Cr / Cu / Cr electrode (address electrode 2) into the underlying glass layer (dielectric layer 10) is higher than the softening point temperature of the glass layer (dielectric layer 10). Temperature is set so that the underlying glass layer (dielectric layer 10) is in a softened state.
[0065]
Further, since the partition wall 3 formed on the dielectric layer 10 is also formed by firing, the dielectric layer 10 must have a softening point not lower than the firing temperature of the partition wall 3 so as not to be softened when the partition wall 3 is fired. .
[0066]
In addition, a Cr / Cu / Cr electrode (address electrode 2) is formed on the underlying glass layer (dielectric layer 10) (step 111).
[0067]
Next, the partition wall material is printed at a predetermined height (step 117).
[0068]
Then, it is dried (step 118).
[0069]
It is processed into a desired shape by sandblasting or the like (step 119).
[0070]
At this time, since the electrode surface of the Cr / Cu / Cr electrode (address electrode 2) is not covered with the glass layer (dielectric layer 10), the sandblasting is finished before the electrode is damaged by the sandblasting.
[0071]
Thereafter, firing is performed (step 120).
[0072]
The dielectric layer 10 softened by the firing of the barrier ribs in step 120 wets and spreads on the electrode surface, and the electrode sinks into the dielectric layer 10 (step 121).
[0073]
As a result, a thin dielectric layer 10 is formed on the surface of the address electrode 2, and a structure as shown in FIG. 1 is obtained. That is, the electrode surface of the Cr / Cu / Cr electrode is sufficiently covered with the base glass layer (dielectric layer 10), and the electrode formation is completed in the base glass layer (dielectric layer 10) (step 122).
[0074]
When the address electrode 2 is a thin film electrode, the underlying glass layer (dielectric layer 10) has a flatness of 100 nm or less and a glass material with a softening point that is low enough to wet and spread on the surface before the address electrode 2 is oxidized. Furthermore, it is desirable that the glass material does not react with the address electrode 2 when the partition walls 3 are fired.
[0075]
The process described above can create a state in which the surface of the address electrode 2 is thinly coated with the dielectric layer 10 regardless of whether the address electrode 2 is a thin film electrode or a thick film electrode. The coverage of the dielectric layer 10 with respect to the address electrode 2 can be improved regardless of the presence or absence of a step due to the address electrode 2 with respect to the glass substrate 1. Therefore, since the entire surface of the address electrode 2 is covered, the oxidation of the address electrode 2 can be suppressed, and the reliability is improved.
[0076]
Next, the difference between the case where the thick film Ag electrode is formed on the conventional glass substrate and the case where the thick film Ag electrode is formed on the dielectric layer formed on the glass substrate is compared by SEM photographs.
[0077]
FIG. 2 shows the surface of a thick-film Ag sintered body (address electrode 2) obtained by patterning a photosensitive Ag paste by photolithography when there is no underlying glass layer (dielectric layer 10) and firing at 590 ° C. or higher. An SEM image is shown. Here, there are crystal grain boundaries peculiar to sintered metals. In addition, this electrode was poor in adhesion to the back glass substrate 1 and peeled off immediately, and when the partition 3 was formed by sandblasting, it was easily damaged and easily caused by peeling.
FIG. 3 shows that a base glass layer (dielectric layer 10) having a softening point of less than 590 ° C. is formed by printing and firing, and then the same thick film Ag electrode (address electrode 2) is patterned by the same method and fired at 590 ° C. or more. The SEM image which observed the surface at the time of doing is shown. Since the softening point of the underlying glass layer (dielectric layer 10) is less than 590 ° C. while the firing temperature of the thick film Ag electrode (address electrode 2) is 590 ° C. or higher, the underlying layer is fired when the thick film Ag electrode (address electrode 2) is fired. The glass layer (dielectric layer 10) is softened. Therefore, a thin glass layer (dielectric layer 10) was observed on the address electrode 2, and it was observed that the glass layer (dielectric layer 1) was completely submerged in the lower layer. In particular, the interface between the surface of the thick film Ag electrode (address electrode 2) and the dielectric layer 10 is in a colloidal state due to the reaction with metal ions contained in the thick film Ag electrode (address electrode 2). 10 has a structure in which the accumulated charge accumulated on the surface is easily leaked to the address electrode 2. However, since the colloidal state was limited to the vicinity of the address electrode surface and did not exist between adjacent address electrodes, a short circuit between adjacent address electrodes was not confirmed. Further, since the partition walls were formed by sandblasting in the state of FIG. 3 and the surface of the address electrode 2 was glass coated, the address electrode 2 was not damaged.
[0078]
As described above, the electrode is slightly submerged in the underlying glass layer by baking after the electrode pattern is formed, or the thin glass layer is wetted and formed on the electrode surface, so that the address electrode is completely covered with the glass layer. . As a result, the address electrode can be protected from sandblasting without the address protection layer, and the thin glass film can also act as a capacitor with a large capacity, so that the address voltage can be driven low, and the surplus charge accumulated by the tunnel effect on the address electrode is also reduced. Since it flows appropriately, latch-up and accidental abnormal discharge can also be prevented.
[0079]
In addition, when a heat run is performed for a long time at a high humidity of 85% RH, a short-circuit due to migration occurs in the conventional electrode structure in about 200 hours, whereas in the structure shown in FIG. 1, migration does not occur even after 1000 hours. It was also confirmed that the migration life was greatly improved. In other words, even when an Ag sintered body is used as the address electrode, the electrode is completely covered with glass, so the migration life, which has been a problem with thick film Ag electrodes and the like, has been drastically increased and the reliability has been greatly improved. An improved low cost back plate can be supplied. It has also been confirmed that the same effect can be obtained in a thin-film wiring system such as Cr / Cu / Cr or Cr / Al / Cr if a base dielectric is appropriately selected.
[0080]
【The invention's effect】
As described above, according to the present invention, in the gas discharge display device, the dielectric layer on the address electrode is made thin enough to release accumulated charges, and at least the entire electrode arranged in the display area is made of the dielectric layer. It becomes possible to cover. Therefore, it is possible to suppress damage during sandblasting and occurrence of latch-up and abnormal discharge in the gas discharge display device.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of an AC type gas discharge display device according to an embodiment of the present invention. FIG. 2 is an SEM photograph of a thick film Ag sintered body without a base glass. FIG. 4 is a perspective view of a conventional AC gas discharge display device. FIG. 5 is a cross-sectional view of a conventional AC gas discharge display device. FIG. 7 is a flowchart showing a manufacturing process of an AC type gas discharge display device according to the embodiment of the present invention. FIG. 7 is a diagram showing a configuration around an external connection terminal of the AC type gas discharge display device according to the embodiment of the invention. FIG. 9 is a diagram showing connections of external connection terminals of an AC type gas discharge display device according to an embodiment of the present invention. FIG. 9 shows another manufacturing process of an AC type gas discharge display device according to an embodiment of the present invention. Flowchart showing explanation
DESCRIPTION OF SYMBOLS 1 ... Glass substrate (back surface), 2 ... Address electrode, 3 ... Partition, 4 ... Phosphor, 5 ... Protective layer (MgO), 6 ... Dielectric layer (front surface), 7 ... Bus electrode, 8 ... Display electrode (transparent) Electrode), 9 ... Glass substrate (front surface), 10 ... Dielectric layer (back surface).

Claims (6)

A first substrate having a first surface in which a plurality of first electrodes are arranged in parallel and a partition wall is arranged between the first electrodes, and a plurality of substrates arranged so as to intersect the first electrodes A second substrate having a second surface on which the second electrodes are arranged in parallel, the second surface facing the first surface such that the second electrode intersects the first electrode, respectively. A method of manufacturing a gas discharge display device that is bonded together,
A dielectric layer forming step of forming a dielectric layer on the first surface of the first substrate;
An electrode pattern forming step of forming a pattern of the first electrode on the dielectric layer; and the dielectric layer is softened and wetted on the upper surface of the first electrode, and the first electrode is Perform the dielectric layer softening process to sink into the body layer in this order,
The dielectric layer softening step includes thinly covering the upper surface of the first electrode with the dielectric layer while separating the first electrode from the first surface of the first substrate with the dielectric layer. A method for manufacturing a gas discharge display device.   2. The dielectric layer forming step, wherein a glass layer is formed as the dielectric layer on the first surface of the first substrate, and then the formed glass layer is baked. The manufacturing method of the gas discharge type display apparatus of description. The pattern of the first electrode is made of any metal of Ag, Ni, Cu, and Al, and the dielectric layer has a softening point temperature lower than the firing temperature of the first electrode made of the metal. By forming with the material that has
3. The dielectric layer softening step includes softening the dielectric layer by firing the first electrode to sink the first electrode into the dielectric layer. 4. Of manufacturing a gas discharge display device. In the electrode pattern forming step, the pattern of the first electrode is formed in a laminated structure of any one of Cr / Cu / Cr, Cr / Al / Cr, Cr / Cu, and Cr / Al,
3. The method of manufacturing a gas discharge display device according to claim 1, wherein in the dielectric layer softening step, the dielectric layer is softened by heating. After the dielectric layer softening step, the step of forming the partition on the dielectric layer and the step of firing the partition are performed in this order,
5. The method of manufacturing a gas discharge display device according to claim 1, wherein the dielectric layer is formed of a material having a softening point temperature equal to or higher than a firing temperature of the partition wall.   The method of manufacturing a gas discharge display device according to claim 1, wherein the dielectric layer covering the upper surface of the first electrode has a thickness of 1 μm or less.

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