JP4189737B2 - Thin film manufacturing method and electronic device manufacturing method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method for manufacturing a thin film and a method for manufacturing an electronic device.
[0002]
[Prior art]
Thin film transistors (TFTs: Thin Films Transistors) constituting active matrix liquid crystal displays (AMLCDs) that are generally available on the market include polysilicon (polycrystal) formed by a method such as annealing by excimer laser irradiation. Silicon) is used.
[0003]
The mobility of either p-channel or n-channel polysilicon thin film transistors is becoming close to that of single-crystal silicon, which allows integrated circuits (ICs) on the same substrate as the active pixel matrix. Can be assembled, and higher resolution (definition) and reliability can be improved.
[0004]
In the case of an organic EL (Electro-luminescence) display that requires a relatively high current, a polysilicon thin film transistor is the only solution for forming a pixel matrix equivalent to the above.
[0005]
Until now, polysilicon thin film transistors have been fabricated on quartz substrates by a high temperature process. However, a quartz substrate that can withstand a high temperature process is expensive, and the cost of the substrate becomes extremely large for a size of 10 to 17 inches such as a direct-view type OA (office automation) display. For this reason, an inexpensive glass substrate has been used instead of a quartz substrate, but such an inexpensive glass generally has poor heat resistance.
[0006]
In recent years, development of a process for producing a polysilicon thin film transistor at a temperature at which such a glass substrate can be used (for example, 500 to 550 ° C.), that is, a low temperature polysilicon thin film transistor process has been actively promoted. For example, in a polysilicon thin film transistor, a silicon oxide film is used as a gate insulating film, and a method for producing this silicon oxide film at a low temperature has been studied. However, there are few reports on the method for producing a silicon oxide film at a low temperature as described above.
[0007]
In order to apply polysilicon to SRAMs (Static Random Access Memories), nonvolatile memories, and three-dimensional ICs, low temperature growth of oxide films is extremely important. Very large scale integration (VLSI: Very Large Scale Integration) also requires high quality low temperature oxide films for shallow junctions and three-dimensional integration.
[0008]
For example, in a polysilicon thin film transistor, a silicon oxide film as a gate insulating film is a plasma using 200 to 300 ° C. atmospheric pressure CVD (chemical vapor deposition) or TEOS (tetraethoxysilane) as a raw material. It is manufactured by the CVD method or the like. In these cases, a high-quality silicon oxide film cannot be obtained because it is manufactured at a low temperature in consideration of the glass substrate as described above.
[0009]
On the other hand, a method of forming a silicon oxide film on the surface of silicon at a reaction rate of 0.05 nm / pulse by heating the silicon to a melting point of silicon by irradiating a laser having a wavelength of 308 nm in an oxygen gas atmosphere, that is, heat. An oxidation method is known (for example, see Non-Patent Document 1 described later).
[0010]
FIG. 5 is a schematic cross-sectional view of a conventional apparatus using the above-described laser.
[0011]
As shown in FIG. 5, the apparatus 22 has a glass substrate 21 having a polysilicon film 20 disposed on a table 23 provided therein. Note that the inside of the apparatus 22 is maintained at, for example, 10 ⁻⁴ Pa so as not to generate impurities when the oxide film is formed. Then, O ₂ gas, O ₃ gas, or N ₂ O gas is supplied into the apparatus 22, and a laser 24 having a wavelength of 308 nm, 248 nm, or 193 nm is irradiated from outside the apparatus 22. As a result, the temperature is raised to the melting point of silicon and the O ₂ gas or N ₂ O gas filled in the device 22 is ionized, and a silicon oxide film is formed on the surface of the polysilicon film 20 at a reaction rate of 0.05 nm / pulse. Can be produced.
[0012]
Further, Non-Patent Document 1 described later shows that a faster oxidation rate can be obtained by using a laser having a shorter wavelength, as shown in FIG. This is probably because a short wavelength laser is more likely to generate active oxygen by the photodissociation reaction of O ₂ as shown in the following reaction formula (1).
[0013]
O ₂ → 2O ( ³ P) (1)
(However, the reaction formula (1) is a case where a laser having a wavelength of 193 nm is used.)
[0014]
[Non-Patent Document 1]
TE Orlowdki and D. A Manteli; J. appl.Phys. 64 (1998) 4410
[0015]
[Problems to be solved by the invention]
However, at present, a laser with a short wavelength such as a wavelength of 193 nm has a complicated optical system, and it is extremely difficult to obtain a stable output. In addition, ionization of gas molecules using such a short wavelength laser has a problem that impurities are very easily generated in the optical system of the laser, the laser is absorbed by the impurities, and the optical system is damaged. is there.
[0016]
Therefore, it is conceivable to use a laser having a longer wavelength, such as 248 nm or 308 nm, which can obtain a relatively stable output. However, the longer the wavelength, the more difficult it is to photodissociate gas molecules.
[0017]
The present invention has been made to solve the above-described problems, and an object of the present invention is to manufacture a thin film manufacturing method and an electronic device capable of manufacturing a high-quality thin film at a low temperature and a high reaction rate. It is to provide a method.
[0018]
[Means for Solving the Problems]
That is, the present invention provides an ionization step for ionizing a source gas and a temperature raising step for bonding ions of the source gas and the surface of the substrate by raising the temperature of the substrate. When making a thin film,
The support is placed in a chamber with the substrate placed on a support that remains as a support for the substrate even after the thin film has been produced ,
From said laser light source placed outside the chamber, by irradiating a laser beam in a direction toward the substrate surface with respect to the substrate in the chamber, the substrate was heated to a temperature lower than the heat resistant temperature of the support,
By irradiating ultraviolet rays in a direction along the substrate surface on the substrate from an ultraviolet lamp installed in the chamber, ionizing the source gas,
Wherein at Atsushi Nobori, to produce the thin film by combining the ion and the substrate surface of the raw material gas,
The present invention relates to a method for manufacturing a thin film.
[0019]
The present invention also modifies the surface of the substrate by a method comprising an ionization step of ionizing the source gas and a temperature raising step of bonding the source gas ions and the surface of the substrate by heating the substrate. When manufacturing an electronic device by creating a thin film on its surface,
The support is placed in a chamber with the substrate placed on a support that remains as a support for the substrate even after the thin film has been produced ,
From said laser light source placed outside the chamber, by irradiating a laser beam in a direction toward the substrate surface with respect to the substrate in the chamber, the substrate was heated to a temperature lower than the heat resistant temperature of the support,
By irradiating ultraviolet rays in a direction along the substrate surface on the substrate from an ultraviolet lamp installed in the chamber, ionizing the source gas,
Wherein at Atsushi Nobori, to produce the thin film by combining the ion and the substrate surface of the raw material gas,
The present invention relates to a method for manufacturing an electronic device.
[0020]
According to the present invention, the ionization step of ionizing the source gas and the temperature increase step of combining the source gas ions and the surface of the substrate by increasing the temperature of the substrate are performed by different means ( that is, carried out with UV radiation from the UV lamp was installed ionization process in the chamber, by) performed by laser light irradiation from the laser source the heating step was placed outside the chamber, wherein by laser light Noboru the raising process readily ionize the source gas at low temperatures in the ultraviolet radiation that due to a different UV lamp, it is possible to manufacture a high quality the thin film at a low temperature and a high reaction rate.
In addition, the substrate is disposed on the support, and the substrate is heated to a temperature lower than the heat-resistant temperature of the support, and in this state, the ions and the surface of the substrate are combined, so the support Rukoto using inexpensive glass plate as a body and made possible by the ionization at a low temperature. And since such a support body remains as it is as a support body of the said board | substrate after preparation of the said thin film, the support body which has a board | substrate with a thin film at low cost can be used for manufacture of an electronic device.
[0021]
DETAILED DESCRIPTION OF THE INVENTION
The manufacturing method based on this invention can manufacture the said thin film containing the said source gas component by ionizing the said source gas on the surface of the said board | substrate, and heating up the said board | substrate. Here, it is important to perform the ionization and the temperature increase using different means, and at least the ionization is performed using an ultraviolet lamp, and at least the temperature increase is performed using a laser.
[0022]
Specifically, after the ionization of the source gas by irradiating the ultraviolet lamp, the substrate is heated by further irradiating the laser while maintaining the ionized state.
[0023]
According to the production method and apparatus based on the present invention, at least the temperature is raised by irradiating the laser with at least the ionization performed using the ultraviolet lamp, so that the ionization of the source gas is performed at a low temperature. For example, it is possible to suppress contamination of impurities such as impurities on the optical system of the laser. Moreover, the production speed of the thin film can be increased, and the high-quality thin film can be produced.
[0024]
Here, the ionization using the ultraviolet lamp is preferably performed in a reduced-pressure atmosphere (for example, 10 ⁵ to 10 ⁻¹ Pa). For example, the support on which the substrate is disposed may be installed in a chamber maintained in a reduced-pressure atmosphere, the ionization beam may be irradiated in the chamber, and the temperature-raising beam may be irradiated from outside the chamber. preferable.
[0025]
When the ultraviolet lamp as the ionizing beam is irradiated in the air from outside the chamber, molecules in the air are also ionized, and impurities are generated in the optical system of the laser as the temperature raising beam. Sometimes. Then, the laser is absorbed by the impurities, and the production speed of the thin film may be reduced.
[0026]
If the ultraviolet lamp is used, the ionization can be easily performed. In addition, although it does not specifically limit as said ultraviolet lamp, For example, the brand name Ushiro UM-452 spectrum as shown in FIG. 4 can be used. This lamp has a high-frequency spectrum in deep ultraviolet rays, and is very effective for ionization of oxygen gas, for example, and has already been used for ashing of a photoresist.
[0027]
In the case of performing the ionizing, it is considered to use a catalyst material to dissociate the source gas, as such a catalyst material, such as 12CaO · 7Al ₂ O ₃ can be used.
[0028]
As the laser, a pulse laser having a wavelength of 333 nm, 308 nm, 248 nm, 222 nm, or 193 nm is preferably used. Since the pulse laser with the wavelength as described above can irradiate a wide area at a time, for example, the temperature can be raised over a wide range, and the effect of promoting the ionization by the ultraviolet lamp can be obtained. .
[0029]
Further, by using the pulse laser, only the surface temperature of the substrate can be set to, for example, 2000 ° C. or more in a short time, and the high-quality thin film can be produced more efficiently.
[0030]
Here, among the wavelengths described above, a pulse laser having a short wavelength of 193 nm or the like is difficult to obtain and easily generates impurities. Therefore, it is particularly preferable to use a pulse laser having wavelengths of 308 nm and 248 nm.
[0031]
Moreover, it is preferable to irradiate the said pulsed laser on the conditions of 1-5000 pulses and 30-150 ns. If the pulse laser is used, the degree of the temperature rise can be easily controlled by appropriately selecting the pulse width, the irradiation time and the like as described above, and the thickness of the thin film can be easily controlled.
[0032]
Here or to have it the ionization and the temperature increase by disposing the substrate on the support, the upper limit temperature of the Atsushi Nobori, is important to have a temperature lower than the heat resistant temperature of the support There is . For example, in the case of performing long time the pulse laser without pulse irradiated, not only on the surface of the substrate, heat is transferred to the inside, but the support may become intolerable heat, this Ru can proof Gukoto (hereinafter the same).
[0033]
And have you to a manufacturing method and a manufacturing method of an electronic device of a thin film according to the present invention, more specifically, O ₂ on the surface of a silicon substrate placed on a glass support as the support, O ₃ or N ₂ O gas or in the presence of a mixed gas atmosphere, after ionizing the raw material gas by irradiating the ultraviolet lamps, while maintaining the ionized state, temperature of the surface of the silicon substrate to further irradiation with the laser As a result, a silicon oxide film can be formed on the silicon substrate.
[0034]
1 to 3 show an example of a method for manufacturing a thin film transistor (TFT) by using a thin film manufacturing method (and an electronic device manufacturing method) according to the present invention, and manufacturing a liquid crystal display device using the TFT. It is a schematic sectional drawing which shows these in process order.
[0035]
As shown in FIG. 2A, a film 2 a made of polysilicon is produced on the glass support 1. As the glass support 1, for example, low-melting glass having a thickness of 50 to 700 μm, borosilicate glass, or the like can be used, and the low-melting glass can realize further cost reduction. The thickness of the polysilicon film 2a may be set to 40 to 500 nm, for example, and a CVD method (Chemical Vapor Deposition) or the like can be used as a manufacturing method thereof.
[0036]
Next, as shown in FIG. 2B, the polysilicon film 2a produced above is etched to produce a channel layer precursor 2b.
[0037]
Then, as shown in FIG. 2C, a silicon oxide film 3 as a gate oxide film is formed so as to cover the channel layer precursor 2b made of polysilicon. Here, as a method for producing the silicon oxide film 3, a method for producing a thin film and its apparatus (and a method for producing an electronic device) according to the present invention are preferably used.
[0038]
FIG. 1 is a schematic sectional view of a thin film production apparatus according to the present invention.
[0039]
The thin film production apparatus of the present invention has means for ionizing the source gas on the surface of the substrate and means for raising the temperature of the substrate, and the ionization means and the temperature raising means are different from each other. In particular, as shown in FIG. 1, at least the ionization is preferably performed by the ultraviolet lamp 5, and at least the temperature increase is desirably performed by the laser 6.
[0040]
Specifically, in the thin film production apparatus 4 according to the present invention, a beam irradiation means for irradiating an ultraviolet lamp 5 as the ionization beam is installed in a chamber 7, and the laser 6 as the temperature-raising beam. A beam irradiation means for irradiating is provided outside the chamber 7. Further, there are provided means for supplying the source gas, a window 8 through which the laser 6 passes, a table 9 on which the substrate is arranged, and a means for bringing the inside of the chamber 7 into a reduced pressure atmosphere.
[0041]
Then, the glass support 1 having the polysilicon 2 b in the state of FIG. 2B is placed on the table 9 in the chamber 7. Next, the inside of the chamber 7 is kept in a reduced-pressure atmosphere state (for example, 10 ⁵ to 10 ⁻¹ Pa), an O ₂ or O ₃ gas atmosphere is present on the surface of the polysilicon 2 b, and the ultraviolet lamp 5 is irradiated in the chamber 7. After ionizing the gas, the surface of the polysilicon 2b is heated by irradiating the laser 6 from outside the chamber 7 while keeping the ionized state, thereby forming the silicon oxide film 3 on the polysilicon 2b. Can be produced.
[0042]
Here, the ionization using the ultraviolet lamp 5 is desirably performed in a reduced-pressure atmosphere as described above. When irradiation with the ultraviolet lamp 5 is performed in the air from outside the chamber 7, molecules in the air are also ionized to generate impurities, and the impurities may adhere to the optical system of the laser 6, for example, the window 8. Then, the laser 6 is absorbed by this impurity, and the production speed of the silicon oxide film 3 may be reduced.
[0043]
If the ultraviolet lamp 5 is used, the ionization can be easily performed. In addition, although it does not specifically limit as the ultraviolet lamp 5, For example, a brand name Ushiro UM-452 spectrum as shown in FIG. 4 can be used.
[0044]
As the laser 6, it is preferable to use a pulse laser having a wavelength of 333 nm, 308 nm (XeCl), 248 nm (KrF), 222 nm, or 193 nm (ArF). Since the pulse laser having the wavelength as described above can irradiate a wide area at a time, for example, the temperature can be raised over a wide range, and the effect of promoting the ionization by the ultraviolet lamp 5 can be obtained.
[0045]
In addition, by using the pulse laser, only the surface temperature of the polysilicon 2b as the substrate can be set to, for example, 2000 ° C. or more in a short time, and the high-quality silicon oxide film 3 can be produced more efficiently. Can do. Furthermore, since the said temperature rise is performed using the laser 6, the material of the said support body is not limited by control of a pulse, for example.
[0046]
Here, among the wavelengths described above, a pulse laser having a short wavelength of 193 nm or the like is difficult to obtain and easily generates impurities. Therefore, it is particularly preferable to use a pulse laser having wavelengths of 308 nm and 248 nm.
[0047]
Moreover, it is preferable to irradiate the said pulsed laser on the conditions of 1-5000 pulses and 30-150 ns. By appropriately selecting the conditions such as the pulse width and the irradiation time as described above, the degree of the temperature rise can be easily controlled. For example, the thickness of the silicon oxide film 3 can be easily controlled.
[0048]
Here, the upper limit temperature of the temperature increase may be a temperature lower than the heat resistant temperature of the glass support 1. For example, when the pulse laser is applied for a long time without irradiating the pulse laser, heat may be transmitted not only to the surface of the polysilicon 2b but also to the inside, and the glass support 1 may not be able to withstand the heat.
[0049]
According to the manufacturing method and apparatus based on the present invention, at least the temperature rise is performed by irradiating the laser 6 with at least the ionization performed using the ultraviolet lamp 5, so that the ionization of the source gas is performed at a low temperature. For example, it is possible to suppress contamination such as impurities on the window 8 of the chamber 7. Moreover, the production speed of the silicon oxide film 3 can be increased, and a high-quality silicon oxide film 3 can be produced.
[0050]
Although the thickness of the silicon oxide film 3 varies depending on the laser conditions and the like, for example, when a pulse laser with a wavelength of 308 nm is used, the silicon oxide film 3 can be formed to about 100 μm or less. However, according to the method and the apparatus based on the present invention, the high-quality silicon oxide film 3 having a desired thickness is produced at a high reaction rate even if the laser irradiation time is very short compared with the conventional method. be able to.
[0051]
After the silicon oxide film 3 is formed on the channel layer precursor 2b made of polysilicon as described above, as shown in FIG. 2D, PVD (Physical Vapor Deposition: physical) is used using a material such as Al. The gate electrode 10 is produced by a vapor deposition method or the like.
[0052]
Next, as shown in FIG. 2E, ion implantation is performed to form an n-type region, and a channel layer 2c is fabricated. Here, an n-type TFT will be described as an example, so that ions such as phosphorus, arsenic, and antimony can be used. When a p-type TFT is manufactured, boron or the like may be used as the ion.
[0053]
Next, as shown in FIG. 3F, an insulating protective film 11 is formed so as to cover the entire surface of the glass substrate 1 including the channel layer 2c, the silicon oxide film 3, and the gate electrode 10. As the insulating protective film 11, for example, a silicon oxide film can be used, which may be formed by a chemical vapor deposition (CVD) method or the like. Then, a transparent electrode 12 made of, for example, ITO (indium tin oxide: conductive oxide in which indium oxide is doped with tin) is formed at an arbitrary position of the insulating protective film 11.
[0054]
Next, as shown in FIG. 3G, the TFT 15 can be manufactured by etching the insulating protective film 11 and then forming the source electrode 13 and the drain electrode 14.
[0055]
Then, as shown in FIG. 3H, an alignment film 16 is formed so as to cover the entire surface of the glass substrate 1 including the gate electrode 10, the source electrode 13, the drain electrode 14, the insulating protective film 11 and the transparent electrode 12. Make it. As the alignment film 16, polyimide or the like can be used, and it may be formed by coating or the like.
[0056]
Next, a transparent electrode (ITO) 12 ′ and an alignment film (for example, polyimide) 16 ′ are coated on one surface side of the counter substrate 17 made of glass or the like, and the alignment film 16 ′ is rubbed. Then, the counter substrate 17 having the transparent electrode 12 ′ and the alignment film 16 ′ is attached by aligning the surface having the alignment film 16 ′ on the TFT 15 side, aligned with the glass support 1 on which the TFT 15 is manufactured, An empty cell is produced by bonding and fixing the peripheral part. Note that the glass substrate 1 remains as a support for the TFT 15.
[0057]
Next, the liquid crystal display device 19 can be manufactured by injecting the liquid crystal material 18 into the empty cell.
[0058]
When the liquid crystal display device 19 is used, a driving signal voltage is applied by the transparent electrodes 12 and 12 ′ through the source electrode 13 and the drain electrode 14 of the TFT 15.
[0059]
As the critical dimensions of microelectronics have decreased, control of the vertical and lateral diffusion of the device pn junction is required to prevent punchthrough and short channel effects. In the above-described method, that is, in the steps of FIGS. 2B to 2E, unlike the above, after forming a pn junction by ion implantation of impurities such as P (phosphorus), B (boron), Sb (antimony), etc. When the gate oxide film 3 is formed, when the gate oxide film 3 is formed by thermal oxidation in a thermal oxidation furnace, it takes a long time and impurities are likely to diffuse under the channel. On the other hand, the method according to the present invention forms the gate oxide film under the temperature rise by the laser beam, so that the temperature rise time is very short and the diffusion of impurities is reduced. This is a great advantage for the manufacture of
[0060]
This is different from the above example in the case where an oxide film (gate oxide film or the like) is formed on the surface of the semiconductor substrate after forming a pn junction by introducing impurities by ion implantation or the like on the semiconductor substrate. is there.
[0061]
The embodiments of the present invention have been described above. However, the above-described examples can be variously modified based on the technical idea of the present invention, and the sample structure, materials used, and the like do not depart from the spirit of the invention. Needless to say, it can be selected as appropriate.
[0062]
For example, the example in which the chamber ₂ is filled with the O ₂ or O ₃ gas and ionized by irradiating the ultraviolet lamp 5 has been described above. However, instead of the O ₂ or O ₃ gas, for example, N ₂ O gas or a mixed gas thereof may be used. It is also possible to produce a nitride film on the surface of the substrate by supplying ammonia gas and ionizing the gas.
[0064]
Moreover, although the example which used the glass support body as the said support body was demonstrated above, according to the manufacturing method and apparatus of the thin film based on this invention, and the manufacturing method of an electronic device, the said ultraviolet lamp or the said catalyst substance is used. Since at least the ionization is performed and the temperature is raised at least by the laser irradiation, the material of the support is not particularly limited, and may be, for example, plastic.
[0065]
Furthermore, although the example which used the polysilicon as said board | substrate was demonstrated, it is not limited to this. Furthermore, although the manufacturing process of TFT was demonstrated as an example, the manufacturing method and apparatus of the thin film based on this invention, and the manufacturing method of an electronic device are not limited to this.
[0066]
[Effects of the invention]
According to the present invention, the ionization step of ionizing the source gas and the temperature increase step of combining the source gas ions and the surface of the substrate by increasing the temperature of the substrate are performed by different means ( that is, carried out with UV radiation from the UV lamp was installed ionization process in the chamber, by) performed by laser irradiation from the laser source the heating step was placed outside the chamber, wherein by laser light Noboru the raising process readily ionize the source gas at low temperatures in the ultraviolet radiation that due to a different UV lamp, it is possible to manufacture a high quality the thin film at a low temperature and a high reaction rate.
In addition, the substrate is disposed on the support, and the substrate is heated to a temperature lower than the heat-resistant temperature of the support, and in this state, the ions and the surface of the substrate are combined, so the support Rukoto using inexpensive glass plate as a body and made possible by the ionization at a low temperature. And since such a support body remains as a support body of the said board | substrate after preparation of the said thin film, the said support body which has a board | substrate with a thin film can be used for manufacture of an electronic device at low cost.
[Brief description of the drawings]
FIG. 1 is a schematic cross-sectional view of a thin film production apparatus according to an embodiment of the present invention.
FIG. 2 shows a method of manufacturing a thin film transistor (TFT) by a manufacturing method and an apparatus thereof (and an electronic device manufacturing method) according to the present invention, and a method of manufacturing a liquid crystal display device using the TFT. It is a schematic sectional drawing shown in order.
3 is a schematic cross-sectional view showing a method of manufacturing a TFT by the manufacturing method according to the present invention and manufacturing a liquid crystal display device using the TFT in the order of steps. FIG.
FIG. 4 is a graph showing an example of an ultraviolet lamp.
FIG. 5 is a schematic cross-sectional view of a thin film production apparatus according to a conventional example.
FIG. 6 is a graph showing a comparison of changes in the thickness of an oxide film produced by pulse laser irradiation.
[Explanation of symbols]
1 ... glass support, 2 ... polysilicon (channel layer),
3 ... Silicon oxide film, 4 ... Thin film production device, 5 ... Ultraviolet lamp,
6 ... laser, 7 ... chamber, 8 ... window, 9 ... stand, 10 ... gate electrode,
DESCRIPTION OF SYMBOLS 11 ... Insulating protective film, 12 ... Transparent electrode, 13 ... Source electrode,
14 ... Drain electrode, 15 ... Thin film transistor, 16 ... Alignment film,
17 ... Counter substrate, 18 ... Liquid crystal material, 19 ... Liquid crystal display device

Claims (10)

In producing a thin film on the surface of the substrate by a method having an ionization step of ionizing the source gas and a temperature rising step of combining the source gas ions and the surface of the substrate by heating the substrate,
The support is placed in a chamber with the substrate placed on a support that remains as a support for the substrate even after the thin film has been produced ,
From said laser light source placed outside the chamber, by irradiating a laser beam in a direction toward the substrate surface with respect to the substrate in the chamber, the substrate was heated to a temperature lower than the heat resistant temperature of the support,
By irradiating ultraviolet rays in a direction along the substrate surface on the substrate from an ultraviolet lamp installed in the chamber, ionizing the source gas,
Wherein at Atsushi Nobori, to produce the thin film by combining the ion and the substrate surface of the raw material gas,
Thin film manufacturing method. The method for producing a thin film according to claim 1 , wherein the ionization using the ultraviolet lamp is performed in a reduced-pressure atmosphere. The method for producing a thin film according to claim 1 , wherein a pulsed laser beam having a wavelength of 333 nm, 308 nm, 248 nm, 222 nm, or 193 nm is used as the laser beam . The method for producing a thin film according to claim 3 , wherein the pulsed laser light is irradiated under conditions of 1 to 5000 pulses and 30 to 150 ns. Wherein on the surface of a silicon substrate arranged on a glass support O _2, O ₃ or N ₂ O gas or the presence of a mixed gas atmosphere as a support, and ionizing the raw material gas by irradiating the ultraviolet after, while maintaining the ionized state, by further raising the temperature of the surface of the silicon substrate is irradiated with the laser beam, to produce a silicon oxide film on the silicon substrate, according to claim 1 film Manufacturing method. A thin film is produced on the surface of the substrate by an ionization step for ionizing the source gas and a temperature raising step for bonding the ions of the source gas and the surface of the substrate by raising the temperature of the substrate. When manufacturing devices,
The support is placed in a chamber with the substrate placed on a support that remains as a support for the substrate even after the thin film has been produced ,
From said laser light source placed outside the chamber, by irradiating a laser beam in a direction toward the substrate surface with respect to the substrate in the chamber, the substrate was heated to a temperature lower than the heat resistant temperature of the support,
By irradiating ultraviolet rays in a direction along the substrate surface on the substrate from an ultraviolet lamp installed in the chamber, ionizing the source gas,
Wherein at Atsushi Nobori, to produce the thin film by combining the ion and the substrate surface of the raw material gas,
Electronic device manufacturing method. The method of manufacturing an electronic device according to claim 6 , wherein the ionization using the ultraviolet lamp is performed in a reduced-pressure atmosphere. The method for manufacturing an electronic device according to claim 6 , wherein pulsed laser light having a wavelength of 333 nm, 308 nm, 248 nm, 222 nm, or 193 nm is used as the laser light . The method for manufacturing an electronic device according to claim 8 , wherein the pulsed laser light is irradiated under conditions of 1 to 5000 pulses and 30 to 150 ns. Wherein on the surface of a silicon substrate arranged on a glass support O _2, O ₃ or N ₂ O gas or the presence of a mixed gas atmosphere as a support, and ionizing the raw material gas by irradiating the ultraviolet after, while maintaining the ionized state, by further raising the temperature of the surface of the silicon substrate is irradiated with the laser beam, to produce a silicon oxide film on the silicon substrate, according to claim 6 electrons Device manufacturing method.

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