JP4227826B2 - Direct gold plating method and plating apparatus therefor - Google Patents
Direct gold plating method and plating apparatus therefor Download PDFInfo
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- JP4227826B2 JP4227826B2 JP2003095409A JP2003095409A JP4227826B2 JP 4227826 B2 JP4227826 B2 JP 4227826B2 JP 2003095409 A JP2003095409 A JP 2003095409A JP 2003095409 A JP2003095409 A JP 2003095409A JP 4227826 B2 JP4227826 B2 JP 4227826B2
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- Prior art keywords
- gold plating
- energization
- plating
- current density
- gold
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- 238000007747 plating Methods 0.000 title claims description 92
- 229910052737 gold Inorganic materials 0.000 title claims description 62
- 239000010931 gold Substances 0.000 title claims description 62
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 title claims description 61
- 238000000034 method Methods 0.000 title claims description 21
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 28
- 229910052759 nickel Inorganic materials 0.000 claims description 14
- 238000005406 washing Methods 0.000 claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- -1 benzene organic compound Chemical class 0.000 claims description 6
- MXZVHYUSLJAVOE-UHFFFAOYSA-N gold(3+);tricyanide Chemical compound [Au+3].N#[C-].N#[C-].N#[C-] MXZVHYUSLJAVOE-UHFFFAOYSA-N 0.000 claims description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N monobenzene Natural products C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 4
- 239000003381 stabilizer Substances 0.000 claims description 3
- SRCZENKQCOSNAI-UHFFFAOYSA-H gold(3+);trisulfite Chemical compound [Au+3].[Au+3].[O-]S([O-])=O.[O-]S([O-])=O.[O-]S([O-])=O SRCZENKQCOSNAI-UHFFFAOYSA-H 0.000 claims description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N naphthalene-acid Natural products C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N pyridine Substances C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims 1
- 238000009713 electroplating Methods 0.000 claims 1
- 239000003607 modifier Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- GEHJYWRUCIMESM-UHFFFAOYSA-L sodium sulfite Chemical compound [Na+].[Na+].[O-]S([O-])=O GEHJYWRUCIMESM-UHFFFAOYSA-L 0.000 description 2
- ZWZLRIBPAZENFK-UHFFFAOYSA-J sodium;gold(3+);disulfite Chemical compound [Na+].[Au+3].[O-]S([O-])=O.[O-]S([O-])=O ZWZLRIBPAZENFK-UHFFFAOYSA-J 0.000 description 2
- YTQVHRVITVLIRD-UHFFFAOYSA-L thallium sulfate Chemical compound [Tl+].[Tl+].[O-]S([O-])(=O)=O YTQVHRVITVLIRD-UHFFFAOYSA-L 0.000 description 2
- 229940119523 thallium sulfate Drugs 0.000 description 2
- 229910000374 thallium(I) sulfate Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GOLCXWYRSKYTSP-UHFFFAOYSA-N arsenic trioxide Inorganic materials O1[As]2O[As]1O2 GOLCXWYRSKYTSP-UHFFFAOYSA-N 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 229910000380 bismuth sulfate Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- KTTMEOWBIWLMSE-UHFFFAOYSA-N diarsenic trioxide Chemical compound O1[As](O2)O[As]3O[As]1O[As]2O3 KTTMEOWBIWLMSE-UHFFFAOYSA-N 0.000 description 1
- BEQZMQXCOWIHRY-UHFFFAOYSA-H dibismuth;trisulfate Chemical compound [Bi+3].[Bi+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O BEQZMQXCOWIHRY-UHFFFAOYSA-H 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 150000002343 gold Chemical class 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 235000010265 sodium sulphite Nutrition 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- KRZKNIQKJHKHPL-UHFFFAOYSA-J tripotassium;gold(1+);disulfite Chemical compound [K+].[K+].[K+].[Au+].[O-]S([O-])=O.[O-]S([O-])=O KRZKNIQKJHKHPL-UHFFFAOYSA-J 0.000 description 1
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- Electroplating And Plating Baths Therefor (AREA)
Description
【0001】
【発明の属する技術分野】
本発明は金めっき方法に関し、更に詳細には、電子素子の金より卑である金属通電層上に直接金めっきを行う方法およびそのための装置に関する。
【0002】
【従来の技術】
従来から、ウェハのバンプや配線をめっきで形成する方法においては、母材やめっき皮膜がニッケルである場合、その上に金めっきを行うことが良く行われており、最近ではこの金めっきとして安全性等の面から非シアン系電気金めっきが広く利用されている。
【0003】
このように、ニッケルなど金より卑である金属通電層上に非シアン系電気金めっきする場合には、金ストライクめっきと呼ばれる短時間のめっきを行った後、通常の条件で金めっきを行うことが一般的である。この金ストライクめっきは、比較的高い電流密度の金めっきであり、ニッケルなどの卑な金属上に短時間で薄い金めっきを施すために行われ、下地のニッケル等と金めっきの密着性の向上を目的とするものである。
【0004】
しかしながら、ウェハの処理等においては、装置の小型化が強く求められており、このためにはより工程の簡略化が必要とされ、金ストライクめっきの省略の可能性も検討項目の一つとなっている。
【0005】
一方、金ストライクめっきにより金めっき層を形成することも考えられるが、金ストライクめっき液の金濃度は通常の金めっき液の1/3から1/10であり、現実的ではない。
【0006】
【発明が解決しようとする課題】
従って、下地ニッケル等の金属層と金めっき層の密着性を低下させることなく金ストライクめっきを省くことのできる技術の開発が本発明の課題である。
【0007】
【課題を解決するための手段】
本発明者らは、上記課題を解決すべく鋭意研究を行った結果、非シアン系電気金めっき浴中においても、通電状態を適宜調製することにより、下地ニッケル等と金めっきとの間で優れた密着性を得ることができ、金ストライクめっきをなくすことが可能であることを見出し、本発明を完成した。
【0008】
すなわち本発明は、電子素子の金より卑である金属の通電層上に非シアン系電気金めっきを行うに当たり、非シアン性金めっき浴に入槽後、無通電、相対的に高い電流密度での通電および相対的に低い電流密度での通電の順に給電し、めっきすることを特徴とする直接金めっき方法である。
【0009】
また本発明は、前処理槽、一または複数の水洗槽、ニッケルめっき槽、一または複数の水洗槽、金めっき槽および一また複数の水洗槽をこの順序で有し、金めっき槽中のアノードに通電するための電源に、無通電、相対的に高い電流密度での通電および相対的に低い電流密度での通電の順に給電するための調整手段が設けられたことを特徴とする直接金めっき装置である。
【0010】
【発明の実施の形態】
本発明において、直接金めっき方法、装置とは、金めっき工程のまえの金ストライクめっき工程を省いた金めっき方法、装置を意味する。
【0011】
本発明方法は、金めっき工程における給電パターンに特徴を有するものである。すなわち、本発明方法においては、非シアン系金めっき浴に入槽後、無通電、相対的に高い電流密度での通電および相対的に低い電流密度での通電の順に給電することが必要である。
【0012】
この給電パターンにおいて、最初の無通電は、入槽後5〜30秒間程度とすれば良い。この時間は、前工程の水洗により、電子素子上、特に微細溝等に付着した水を金めっき液と置換するための時間である。
【0013】
次の相対的に高い電流密度での通電は、非シアン系金めっきでの標準的な電流密度よりやや高めの電流密度で行う通電であり、例えば、0.7〜1A/dm2程度で、1〜30秒程度行えばよい。
【0014】
最後の相対的に低い電流密度での通電は、非シアン系金めっきでの標準的な電流密度で行う通電であり、例えば、0.3〜0.5A/dm2の電流密度で行なえばよい。なお、この通電時間は、目的のめっき厚に応じた時間とすればよい。
【0015】
本発明方法において使用される非シアン系金めっき浴は特に制約されるものではなく、種々の文献や特許に開示のめっき浴を利用することができるが、好ましいものの一例としては、次のような構成のものを挙げることができる。
【0016】
すなわち、金属塩として亜硫酸金ナトリウムや亜硫酸金カリウム等の亜硫酸金塩、硫酸タリウム、三酸化二砒素、硫酸ビスマス等の結晶調整剤および安定化剤を含む非シアン系金めっき浴を好ましいものとして挙げることができる。このうち、安定化剤としては、公知のベンゼン系有機化合物、ナフタレン系有機化合物、ピリジン系有機化合物等が挙げられる。
【0017】
また上記の非シアン系金めっき浴の好ましいめっき条件としては、pH7〜9、40〜60℃の浴温を挙げることができ、特に、pH7の場合は、40〜45℃程度、pH7.5の場合は、40〜55℃程度、pH8の場合は、40〜60℃程度、pH8.5の場合は、40〜45℃程度の範囲が好ましい。
【0018】
上記した本発明の直接金めっき方法を有利に行うための装置としては、例えば図1に示す構成のめっき装置を使用することができる。この図において、1はめっき装置、2はニッケルめっき槽、3は金めっき槽、4は前処理槽、5は水洗槽、6はアノード、7は電源、8は調整手段をそれぞれ示す。
【0019】
図1に示すように、めっき装置1は、前処理槽4、水洗槽5a、ニッケルめっき槽2、水洗槽5b、金めっき槽3および水洗槽5cで構成され、ニッケルめっき槽2中のアノード6aおよび金めっき槽3中のアノード6bはそれぞれ電源7aおよび7bから給電されている。このうち金めっき槽3用の電源7bには、調整手段8が設けられている。
【0020】
また、水洗槽6a、6bおよび6cは、一段ないし多段のいずれであってもよいが、一般的にはそれぞれ多段の水洗槽であることが好ましい。更に、上記調整手段8は、予め組み込まれたプログラムに従って、無通電、相対的に高い電流密度での通電および相対的に低い電流密度での通電の順で給電を行い、本発明の直接金めっき方法を実施する。なお、上記調整手段8の機能を、電源7bに組み込んでも良い。
【0021】
【実施例】
次に実施例を挙げ、本発明を更に詳しく説明するが、本発明はこの実施例に何ら制約されるものではない。
【0022】
実 施 例 1
直接金めっき試験:
下記組成の非シアン系金めっき液を用い、種々の温度およびpHで図2に示す給電パターンで金めっきを行った(目標めっき膜厚:0.35μm)。めっきのための試料としては、下地めっきとして銅めっきを10μm、次いでニッケルめっきを10μm行ったものを用いた。
【0023】
( 非シアン系金めっき液組成 )
亜硫酸金ナトリウム 21.6 g/L
亜硫酸ナトリウム 25 g/L
硫酸タリウム 6.2mg/L
pH調整剤(硫酸または水酸化ナトリウム) 適 量
【0024】
得られた金めっき後の試料について、テープを貼付し、その後このテープを剥がすことによりめっき皮膜が剥離するかどうかを調べた。評価は、全く剥がれのないものを密着性良として○で、数カ所の剥がれのあるものを密着性不良として△で、全面剥離に至ったものを密着性悪として×で評価した。この結果を図3に示す。
【0025】
この結果から、pH7の場合は、40〜45℃で、pH7.5の場合は、40〜55℃で、pH8の場合は、40〜60℃で、pH8.5の場合は、40〜45℃でそれぞれ剥離が認められず、密着性が良いことがわかった。
【0026】
【発明の効果】
本発明によれば、金ストライク工程を経ることなく密着性のよい金めっきを行うことができる。
【0027】
従って、本発明を採用することにより金ストライク工程を省略でき、めっき装置中から金ストライクめっき槽をなくすことが可能となるため、装置全体の大きさを小さくすることが可能である。
【図面の簡単な説明】
【図1】 本発明の直接金めっき装置の一例の構成を示す図面
【図2】 実施例1での通電パターンを示す図面
【図3】 実施例1でのpH、温度と剥離性の関係を示す図面
【符号の説明】
1 … … めっき装置
2 … … ニッケルめっき槽
3 … … 金めっき槽
4 … … 前処理槽
5 … … 水洗槽
6 … … アノード
7 … … 電源
8 … … 調整手段
以 上[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a gold plating method, and more particularly to a method and apparatus for directly performing gold plating on a metal current-carrying layer that is more base than gold of an electronic element.
[0002]
[Prior art]
Conventionally, in a method of forming bumps and wiring on a wafer by plating, when the base material or the plating film is nickel, gold plating is often performed on the base material or the plating film. Non-cyan electrogold plating is widely used from the standpoint of properties.
[0003]
In this way, when non-cyan electrogold plating is performed on a metal conductive layer that is more basic than gold, such as nickel, gold plating should be performed under normal conditions after performing short-time plating called gold strike plating. Is common. This gold strike plating is a gold plating with a relatively high current density, and is performed to apply a thin gold plating on a base metal such as nickel in a short time, improving the adhesion between the underlying nickel and the gold plating. It is intended.
[0004]
However, in wafer processing, etc., downsizing of the apparatus is strongly demanded. For this purpose, simplification of the process is required, and the possibility of omitting gold strike plating is one of the examination items. Yes.
[0005]
On the other hand, although a gold plating layer may be formed by gold strike plating, the gold concentration of the gold strike plating solution is 1/3 to 1/10 that of a normal gold plating solution, which is not realistic.
[0006]
[Problems to be solved by the invention]
Therefore, it is an object of the present invention to develop a technique capable of omitting gold strike plating without reducing the adhesion between a metal layer such as a base nickel and a gold plating layer.
[0007]
[Means for Solving the Problems]
As a result of diligent research to solve the above-mentioned problems, the inventors of the present invention are excellent between a base nickel or the like and gold plating by appropriately adjusting the energization state even in a non-cyan electrogold plating bath. The present invention has been completed by finding that it is possible to obtain high adhesion and eliminate gold strike plating.
[0008]
That is, according to the present invention, when non-cyan electrogold plating is performed on a metal current-carrying layer that is more basic than gold of an electronic element, after entering a non-cyanic gold plating bath, no current is applied and the current density is relatively high. The direct gold plating method is characterized in that power is supplied in the order of current supply and current supply at a relatively low current density and plating is performed.
[0009]
The present invention also includes a pretreatment tank, one or more water washing tanks, a nickel plating tank, one or more water washing tanks, a gold plating tank, and one or more water washing tanks in this order, and an anode in the gold plating tank. Direct gold plating characterized in that the power supply for energizing the power supply is provided with adjusting means for supplying power in the order of non-energization, energization at a relatively high current density, and energization at a relatively low current density Device.
[0010]
DETAILED DESCRIPTION OF THE INVENTION
In the present invention, the direct gold plating method and apparatus mean a gold plating method and apparatus in which the gold strike plating process prior to the gold plating process is omitted.
[0011]
The method of the present invention is characterized by a power feeding pattern in the gold plating step. That is, in the method of the present invention, after entering the non-cyan gold plating bath, it is necessary to supply power in the order of non-energization, energization at a relatively high current density, and energization at a relatively low current density. .
[0012]
In this power feeding pattern, the first non-energization may be performed for about 5 to 30 seconds after entering the tank. This time is a time for replacing the water adhering to the electronic device, particularly to the fine groove, with the gold plating solution by washing with water in the previous step.
[0013]
The energization at the next relatively high current density is an energization performed at a slightly higher current density than the standard current density in non-cyan gold plating, for example, about 0.7 to 1 A / dm 2 , What is necessary is just to perform for about 1 to 30 seconds.
[0014]
The last energization at a relatively low current density is an energization performed at a standard current density in non-cyan gold plating, and may be performed at a current density of 0.3 to 0.5 A / dm 2 , for example. . In addition, what is necessary is just to let this energization time be the time according to the target plating thickness.
[0015]
The non-cyanide gold plating bath used in the method of the present invention is not particularly limited, and plating baths disclosed in various literatures and patents can be used. Preferred examples include the following. The thing of a structure can be mentioned.
[0016]
That is, non-cyanide gold plating baths containing metal regulators and stabilizers such as gold sulfites such as sodium gold sulfite and potassium gold sulfite, thallium sulfate, diarsenic trioxide, and bismuth sulfate as metal salts are preferred. be able to. Among these, examples of the stabilizer include known benzene organic compounds, naphthalene organic compounds, pyridine organic compounds, and the like.
[0017]
Further, preferable plating conditions for the non-cyan gold plating bath include a bath temperature of pH 7 to 9 and 40 to 60 ° C. In particular, in the case of pH 7, the temperature is about 40 to 45 ° C. and pH 7.5. In the case of about 40-55 degreeC, in the case of pH8, about 40-60 degreeC, and in the case of pH8.5, the range of about 40-45 degreeC is preferable.
[0018]
As an apparatus for performing the above-described direct gold plating method of the present invention advantageously, for example, a plating apparatus having the configuration shown in FIG. 1 can be used. In this figure, 1 is a plating apparatus, 2 is a nickel plating tank, 3 is a gold plating tank, 4 is a pretreatment tank, 5 is a washing tank, 6 is an anode, 7 is a power source, and 8 is an adjusting means.
[0019]
As shown in FIG. 1, the
[0020]
Further, the
[0021]
【Example】
EXAMPLES Next, although an Example is given and this invention is demonstrated in more detail, this invention is not restrict | limited to this Example at all.
[0022]
Example 1
Direct gold plating test:
Using a non-cyanide gold plating solution having the following composition, gold plating was performed at various temperatures and pHs using the power supply pattern shown in FIG. 2 (target plating film thickness: 0.35 μm). As a sample for plating, a copper plating of 10 μm and then a nickel plating of 10 μm were used as the base plating.
[0023]
(Non-cyan gold plating solution composition)
Sodium gold sulfite 21.6 g / L
Sodium sulfite 25 g / L
Thallium sulfate 6.2mg / L
pH adjuster (sulfuric acid or sodium hydroxide)
About the obtained gold-plated sample, a tape was affixed, and then it was examined whether or not the plating film was peeled off by peeling off the tape. The evaluation was evaluated as “Good” for those having no peeling at all, “Good” for those having peeling at several places, “B” for poor adhesion, and “No” for those having reached the whole surface peeling. The result is shown in FIG.
[0025]
From this result, it is 40-45 degreeC in the case of pH7, 40-55 degreeC in the case of pH7.5, 40-60 degreeC in the case of pH8, 40-45 degreeC in the case of pH8.5. In each case, no peeling was observed, indicating good adhesion.
[0026]
【The invention's effect】
According to the present invention, gold plating with good adhesion can be performed without going through a gold strike step.
[0027]
Therefore, by adopting the present invention, the gold strike step can be omitted, and the gold strike plating tank can be eliminated from the plating apparatus, so that the size of the entire apparatus can be reduced.
[Brief description of the drawings]
FIG. 1 is a diagram showing a configuration of an example of a direct gold plating apparatus according to the present invention. FIG. 2 is a diagram showing an energization pattern in Example 1. FIG. 3 is a graph showing the relationship between pH, temperature and peelability in Example 1. Drawing to show 【Explanation of symbols】
DESCRIPTION OF
Claims (6)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003095409A JP4227826B2 (en) | 2003-03-31 | 2003-03-31 | Direct gold plating method and plating apparatus therefor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003095409A JP4227826B2 (en) | 2003-03-31 | 2003-03-31 | Direct gold plating method and plating apparatus therefor |
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| Publication Number | Publication Date |
|---|---|
| JP2004300527A JP2004300527A (en) | 2004-10-28 |
| JP4227826B2 true JP4227826B2 (en) | 2009-02-18 |
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|---|---|---|---|
| JP2003095409A Expired - Fee Related JP4227826B2 (en) | 2003-03-31 | 2003-03-31 | Direct gold plating method and plating apparatus therefor |
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| Country | Link |
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| JP (1) | JP4227826B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8357333B2 (en) | 2009-11-19 | 2013-01-22 | Ibiden Co., Ltd. | Honeycomb structural body and exhaust gas converting apparatus |
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| JP4713290B2 (en) * | 2005-09-30 | 2011-06-29 | エヌ・イーケムキャット株式会社 | Forming method of gold bump or gold wiring |
| JP5629065B2 (en) * | 2009-07-02 | 2014-11-19 | メタローテクノロジーズジャパン株式会社 | Electrode forming gold plating bath and electrode forming method using the same |
| JP5418254B2 (en) * | 2010-01-29 | 2014-02-19 | Jfeスチール株式会社 | Electric plating processing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8357333B2 (en) | 2009-11-19 | 2013-01-22 | Ibiden Co., Ltd. | Honeycomb structural body and exhaust gas converting apparatus |
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| JP2004300527A (en) | 2004-10-28 |
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