JP4261350B2 - Substrate processing - Google Patents
Substrate processing Download PDFInfo
- Publication number
- JP4261350B2 JP4261350B2 JP2003524717A JP2003524717A JP4261350B2 JP 4261350 B2 JP4261350 B2 JP 4261350B2 JP 2003524717 A JP2003524717 A JP 2003524717A JP 2003524717 A JP2003524717 A JP 2003524717A JP 4261350 B2 JP4261350 B2 JP 4261350B2
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- JP
- Japan
- Prior art keywords
- electrolyte
- electrode
- substrate
- redox product
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Description
本発明は電気化学的方法を用いる基板処理に関する。より詳細には、本発明は電気化学的方法を用いる基板の化学的修飾法に関する。
多くのデバイスは表面に特定物質のパターンを必要とする。半導体チップは該デバイスの周知の例である。該デバイスの極く最近の例はDNAチップであって、これは固体表面に結合されたオリゴヌクレオチドの配列を含む(G.Ramsay,Nature Biotechnology,1998,vol.16,40−44)。
The present invention relates to substrate processing using electrochemical methods. More particularly, the present invention relates to a method for chemically modifying a substrate using an electrochemical method.
Many devices require a pattern of specific material on the surface. A semiconductor chip is a well-known example of the device. A very recent example of the device is a DNA chip, which contains a sequence of oligonucleotides bound to a solid surface (G. Ramsay, Nature Biotechnology , 1998, vol. 16, 40-44).
該デバイスの性質は表面上の物質の特質およびパターンによって決まる。さらに、既存デバイスの改良が一方では小型化の要求により、他方では化学的及び物理学的特徴を合わせ持つ新規タイプの表面に対する要望によって加速されている。したがって、表面上にパターンを必要とするデバイスを加工する新規方法に対する絶えざる要望がある。 The nature of the device depends on the nature and pattern of the material on the surface. Furthermore, improvements to existing devices are accelerated on the one hand by miniaturization requirements and on the other hand by the desire for new types of surfaces that combine chemical and physical characteristics. Accordingly, there is a continuing need for new methods of processing devices that require patterns on the surface.
表面の特定領域の処理には幾つかの方法がある。1つの方法は写真平版技術を使用する。表面の特定領域を写真平版用マスクで覆い、露出領域を紫外線に暴露することによって修飾する。この方法は半導体の製造に広く用いられており、感光性化合物を塗布した半導体ウエハーの表面に開口部をつくる。 There are several ways to treat a specific area of the surface. One method uses photolithography technology. A specific area of the surface is covered with a photolithographic mask and the exposed area is modified by exposure to ultraviolet light. This method is widely used in the manufacture of semiconductors, and an opening is formed on the surface of a semiconductor wafer coated with a photosensitive compound.
写真平版法はDNAチップの製造にも使用されている。この方法では、光不安定性保護基を有するオリゴヌクレオチドを固体表面に結合させる。表面領域は写真平版用マスクで覆い、表面の露出領域に紫外線を照射する。したがって、光不安定性保護基を表面の暴露領域から除くことができる(G.Ramsay,Nature Biotechnology,1998,vol.16,40−44)。 The photolithographic method is also used in the production of DNA chips. In this method, an oligonucleotide having a photolabile protecting group is attached to a solid surface. The surface area is covered with a photolithographic mask, and the exposed area of the surface is irradiated with ultraviolet rays. Thus, photolabile protecting groups can be removed from exposed areas of the surface (G. Ramsay, Nature Biotechnology , 1998, vol. 16, 40-44).
WO93/22480は電気化学的方法を用いる表面処理法を記載している。この方法では、表面を覆う電解質および表面近傍の電極の配列が設けられる。該配列の1つ以上の電極の電位を変えることによって、1つ以上の電極近傍の表面を修飾することができる。使用した電解質はトリエチルアミンと硫酸とのアセトニトリル溶液である。 WO 93/22480 describes a surface treatment method using an electrochemical method. In this method, an array of electrolyte covering the surface and electrodes near the surface is provided. The surface near one or more electrodes can be modified by changing the potential of one or more electrodes in the array. The electrolyte used is an acetonitrile solution of triethylamine and sulfuric acid.
米国特許第6,093,302号は基板上の特定位置に物質を置く電気化学的方法を述べている。この物質は電極で生じ、通常電極近傍の物質と反応する。緩衝または捕捉溶液の使用が記載されている。緩衝または捕捉溶液は電極の極近傍から離れる試薬との反応によって、処理される基板の溶解能を向上させるためのものである。しかし、緩衝又は捕捉物質を含有するバルク溶液は特定電極から拡散し去る試薬だけでなく、特定電極近傍の基板において反応しようとする試薬をも捕捉するという欠点を有する。 U.S. Pat. No. 6,093,302 describes an electrochemical method of placing material at a specific location on a substrate. This material is generated at the electrode and usually reacts with the material in the vicinity of the electrode. The use of a buffer or capture solution is described. The buffer or capture solution is for improving the solubility of the substrate to be treated by reaction with a reagent leaving the immediate vicinity of the electrode. However, a bulk solution containing a buffer or capture substance has the disadvantage that it captures not only the reagent that diffuses away from the specific electrode, but also the reagent to be reacted on the substrate in the vicinity of the specific electrode.
SchusterらのScience,2000,289,98−101は表面を処理する電気化学的方法の溶解能を向上させる他の方法を述べている。Schusterは拡散時間を限定するために複雑な電流パルスのシ−ケンスを使用する。 Schuster et al., Science , 2000, 289 , 98-101 describes another method for improving the solubility of electrochemical methods for treating surfaces. Schuster uses a complex sequence of current pulses to limit the diffusion time.
本発明の目的は電気化学的手段を用いて基板を修飾する改良法を提供することにある。とくに本発明の目的は優れた溶解能によって基板を修飾する方法を提供することにある。
したがって、本発明は第1の電極によって生じた第1のレドックス生成物の拡散を制御する方法であって、前記第1電極近傍の第2電極によって第2レドックス生成物を生じさせ、第1及び第2電極が電解質と接触しており、ここで前記電解質が、第2レドックス生成物によって第1レドックス生成物が消滅可能となるようなものである方法を提供する。
It is an object of the present invention to provide an improved method of modifying a substrate using electrochemical means. In particular, an object of the present invention is to provide a method for modifying a substrate with excellent solubility.
Accordingly, the present invention is a method for controlling the diffusion of a first redox product produced by a first electrode, wherein a second redox product is produced by a second electrode in the vicinity of the first electrode, A method is provided wherein the second electrode is in contact with an electrolyte, wherein the electrolyte is such that the first redox product can be extinguished by the second redox product.
好ましくは、第2電極は対向電極である。
好ましくは、第1レドックス生成物は活性レドックス生成物であって、電極近傍の基板を修飾するために用いることができる。
Preferably, the second electrode is a counter electrode.
Preferably, the first redox product is an active redox product and can be used to modify the substrate in the vicinity of the electrode.
したがって、別の態様では、本発明は基板を処理する方法であって、該方法は基板に接している電解質および基板近傍にあって電解質に接している1つ以上の電極を設け、かつ少なくとも1つの電極近傍の基板を修飾する活性レドックス生成物を生じさせるように少なくとも1つの電極の電位を変えることを含み、該電解質が、第2レドックス生成物によって該活性レドックス生成物が消滅可能となるようなものであることを特徴とする方法を提供する。 Accordingly, in another aspect, the present invention is a method of processing a substrate, the method comprising an electrolyte in contact with the substrate and one or more electrodes in proximity to the substrate and in contact with the electrolyte, and at least one Changing the potential of at least one electrode to produce an active redox product that modifies a substrate in the vicinity of one electrode, such that the electrolyte can be extinguished by the second redox product. Provided is a method characterized by
消滅可能とは、第2レドックス生成物が、第1レドックス生成物と反応してその反応性を修飾することができ、その結果第1レドックス生成物は当初の形状と同じようには反応しないことを意味する。第1レドックス生成物が活性レドックス生成物である場合には、活性レドックス生成物と第2レドックス生成物との反応は活性レドックス生成物が基板を修飾することを妨げる。たとえば、活性レドックス生成物が酸の場合には、第2レドックス生成物は塩基であることができる。酸と塩基の反応は酸を消滅させて、それが基板を修飾するのを妨げる。 Expirable means that the second redox product can react with the first redox product to modify its reactivity, so that the first redox product does not react in the same way as the original shape. Means. When the first redox product is an active redox product, the reaction of the active redox product with the second redox product prevents the active redox product from modifying the substrate. For example, if the active redox product is an acid, the second redox product can be a base. The reaction between the acid and base destroys the acid and prevents it from modifying the substrate.
好ましい態様では、消滅反応は電解質中の1つ以上の物質を再生させる。
活性レドックス生成物とは基板を修飾することができる酸化または還元生成物を意味する。活性レドックス生成物は、電解質中の物質の酸化または還元によって直接生じさせることができる。あるいはまた、活性レドックス生成物は電解質中の物質の酸化又は還元に続く電解質中の他の物質との1つ以上の後続反応によって間接的に生じさせることができる。
In preferred embodiments, the quenching reaction regenerates one or more substances in the electrolyte.
By active redox product is meant an oxidation or reduction product that can modify the substrate. The active redox product can be produced directly by oxidation or reduction of substances in the electrolyte. Alternatively, the active redox product can be generated indirectly by one or more subsequent reactions with other substances in the electrolyte following oxidation or reduction of the substance in the electrolyte.
通常、活性レドックス生成物は電極表面に生成する。ついで活性レドックス生成物はその近傍の基板を修飾することができる。酸は活性レドックス生成物の好ましい例である。酸は基板上の多種類の反応、たとえば脱離、置換、転位および化学エッチングに関与することができる。好ましくは、活性レドックス生成物が酸の場合には、その酸を用いて基板から酸不安定性保護基を除去する。 Usually, an active redox product is formed on the electrode surface. The active redox product can then modify the nearby substrate. Acid is a preferred example of an active redox product. The acid can participate in many types of reactions on the substrate, such as elimination, substitution, rearrangement and chemical etching. Preferably, when the active redox product is an acid, the acid is used to remove the acid labile protecting group from the substrate.
酸不安定性保護基は当業者には周知であって、たとえばアセタール類(たとえばメトキシメチル、メチルチオメチル、(2−メトキシエトキシ)メチル、ベンゾイルオキシメチル、β−(トリメチルシリル)エトキシメチル、テトラヒドロピラニル、ベンジリデン、イソプロピリデン、シクロヘキシリデン、シクロペンチリデン)、エステル類(たとえばベンゾイル、ベンゾイルオキシカルボニル、第三級ブトキシカルボニル)、エーテル類(たとえばトリチル、ジメトキシトリチル、第三級ブチル)及びシリルエーテル類(たとえば第三級ブチルジメチルシリル、トリメチルシリル、トリエチルシリル)が含まれる。好ましくは、酸不安定性保護基がトリチルまたはジメトキシトリチル(DMT)エーテルであり、これらはオリゴヌクレオチドの合成に通常用いられる保護基である。 Acid labile protecting groups are well known to those skilled in the art and include, for example, acetals (eg, methoxymethyl, methylthiomethyl, (2-methoxyethoxy) methyl, benzoyloxymethyl, β- (trimethylsilyl) ethoxymethyl, tetrahydropyranyl, Benzylidene, isopropylidene, cyclohexylidene, cyclopentylidene), esters (eg, benzoyl, benzoyloxycarbonyl, tertiary butoxycarbonyl), ethers (eg, trityl, dimethoxytrityl, tertiary butyl) and silyl ethers ( For example, tertiary butyldimethylsilyl, trimethylsilyl, triethylsilyl). Preferably, the acid labile protecting group is trityl or dimethoxytrityl (DMT) ether, which are the protecting groups commonly used in the synthesis of oligonucleotides.
同様に、活性レドックス生成物は塩基であることができる。塩基は基板上の種々の反応に関与することができる。たとえば、塩基は塩基不安定性保護基を除くのに用いることができる。 Similarly, the active redox product can be a base. The base can participate in various reactions on the substrate. For example, a base can be used to remove a base labile protecting group.
塩基不安定性保護基は当業者には周知であって、たとえば、9−フルオレニルメトキシカルボニル(Fmoc)およびシアノエチル基が含まれる。
ラジカルは活性レドックス生成物の他の例である。ラジカルは基板上のラジカル反応を開始させるのに用いることができる。ラジカルを生成させるための電気化学的方法は当業
者には周知である。ラジカルを電気化学的に発生させるのに通常用いられる1つの方法はカルボキシレートアニオンの酸化である。
Base labile protecting groups are well known to those skilled in the art and include, for example, 9-fluorenylmethoxycarbonyl (Fmoc) and cyanoethyl groups.
A radical is another example of an active redox product. Radicals can be used to initiate radical reactions on the substrate. Electrochemical methods for generating radicals are well known to those skilled in the art. One commonly used method for generating radicals electrochemically is the oxidation of carboxylate anions.
ハロゲンは活性レドックス生成物の別の例である。ハロゲンは、たとえば基板上の酸化反応または付加反応に用いることができる。ハロゲンは対応するハライドイオンの酸化によって電気化学的に生成させることができる。 Halogen is another example of an active redox product. Halogen can be used, for example, for the oxidation reaction or addition reaction on the substrate. Halogen can be generated electrochemically by oxidation of the corresponding halide ion.
活性レドックス生成物の前記及び他の例は当業者には容易に明らかであろう。
本発明の方法は基板を処理するのに用いられる。本明細書で用いる基板という用語は電極に近接して、活性レドックス生成物によって修飾することができる任意の物質を指す。基板は電極から分離させることができ、その場合に基板を電極近傍に置き、ついでレドックス反応の終了後に電極近傍から離す。あるいはまた、基板を電極自体または電極と同一表面に結合させることができる。必要ならば、レドックス反応が行われた後、基板を電極またはそれと同一表面からはがすことができる。
These and other examples of active redox products will be readily apparent to those skilled in the art.
The method of the present invention is used to process a substrate. As used herein, the term substrate refers to any material that can be modified by an active redox product in proximity to an electrode. The substrate can be separated from the electrode, in which case the substrate is placed in the vicinity of the electrode and then separated from the vicinity of the electrode after the redox reaction. Alternatively, the substrate can be bonded to the electrode itself or to the same surface as the electrode. If necessary, after the redox reaction is performed, the substrate can be peeled off from the electrode or the same surface.
したがって、1つの態様では、基板は電極から分離され、かつ電極に近接する物質の表面である。このように、基板はガラス、プラスチック、固体繊維マトリックス、金属、半導体またはゲル物質の表面であることができる。この物質の表面はレドックス反応によって直接修飾することができる。さらに、この態様において、物質の表面は、物質を結合させていることができる。たとえば、有機化合物を公知の方法によって物質表面に結合させ(そして任意にそれからはがす)ことができる。このように、物質の表面に結合された物質はレドックス反応によって修飾することができる。 Thus, in one aspect, the substrate is a surface of a material that is separated from and proximate to the electrode. Thus, the substrate can be the surface of glass, plastic, solid fiber matrix, metal, semiconductor or gel material. The surface of this material can be modified directly by a redox reaction. Further, in this embodiment, the surface of the substance can be bound with the substance. For example, the organic compound can be bound (and optionally peeled off) to the material surface by known methods. Thus, the substance bound to the surface of the substance can be modified by a redox reaction.
他の態様では、基板はリンカー基によって、電極と同一表面または電極自体に結合された物質である。米国特許第6,093,302号はこの集成装置の後者を述べており、すなわちリンカー基によって基板を電極に結合させる。 In other embodiments, the substrate is a substance bound to the same surface as the electrode or to the electrode itself by a linker group. U.S. Pat. No. 6,093,302 describes the latter of this assembly, i.e., the substrate is attached to the electrode by a linker group.
本発明の方法はWO93/22480に記載された方法に類似する。しかし、本発明の方法は電解質の選択の点で異なる。WO93/2240はトリメチルアミンと硫酸とのアセトニトリル溶液である電解質を使用する。本発明は活性レドックス生成物が少なくとも1種の他のレドックス生成物によって消滅可能となる電解質を使用する。この電解質の利点は電解質を生じさせた電極を速やかに包囲する領域に活性レドックス生成物を正確に閉じ込めることができるということである。 The method of the present invention is similar to the method described in WO 93/22480. However, the method of the present invention differs in the choice of electrolyte. WO 93/2240 uses an electrolyte which is an acetonitrile solution of trimethylamine and sulfuric acid. The present invention uses an electrolyte in which the active redox product can be extinguished by at least one other redox product. The advantage of this electrolyte is that the active redox product can be accurately confined to the region that rapidly surrounds the electrode that produced the electrolyte.
WO93/22480に記載された方法では、特定領域における酸の閉じ込めを電極電位の変動によって制御する。しかし、本発明者らは電解質がトリエチルアミンと硫酸とのアセトニトリル溶液であると、長時間の電解後に酸が閉じ込められないことを発見した。酸の不十分の閉じ込めは処理する基板の不十分な溶解能をもたらす。例えば、アノードの極く近傍から拡散し去るプロトンは電極間の帯域内の基板において反応することができる。このように拡散したプロトンの偶発的な反応は高分解能パターン化基板を得るという立場からは望ましくない。本発明により電解質を選ぶことによって、先行技術の電解質の問題を回避することができる。活性レドックス生成物が少なくとも1つの他のレドックス生成物により消滅可能となるように電解質を選ぶことは本発明の重要な特徴である。 In the method described in WO93 / 22480, acid confinement in a specific region is controlled by variation in electrode potential. However, the present inventors have found that when the electrolyte is an acetonitrile solution of triethylamine and sulfuric acid, the acid is not confined after long-time electrolysis. Insufficient acid confinement results in inadequate solubility of the substrate being processed. For example, protons diffusing away from the immediate vicinity of the anode can react on the substrate in the zone between the electrodes. Such accidental reaction of diffused protons is undesirable from the standpoint of obtaining a high resolution patterned substrate. By choosing an electrolyte according to the present invention, the problems of prior art electrolytes can be avoided. It is an important feature of the present invention to select the electrolyte so that the active redox product can be extinguished by at least one other redox product.
当業者は、他のレドックス生成物によって消滅可能となる活性レドックス生成物を生じさせる電解質の多くの例について認識している。
このような電解質の例はI-とS4O6 2-の組み合わせである。アノードにおけるヨージ
ドの酸化はヨウ素(活性レドックス生成物)を生成し、一方カソードにおけるS4O6 2-の還元はS2O3 2-を生成し、これはアノードにおいて生成したヨウ素を消滅させることができる。電解質中の反応は次のように表すことができる:
アノード:
Those skilled in the art are aware of many examples of electrolytes that produce active redox products that can be extinguished by other redox products.
An example of such an electrolyte is a combination of I − and S 4 O 6 2− . The oxidation of iodide at the anode produces iodine (an active redox product), while the reduction of S 4 O 6 2− at the cathode produces S 2 O 3 2− , which eliminates the iodine produced at the anode. Can do. The reaction in the electrolyte can be expressed as:
anode:
カソード: Cathode:
該反応によるヨウ素の消滅: The disappearance of iodine by the reaction:
好ましくは、活性レドックス生成物が酸で、消滅レドックス生成物がアニオン、好ましくは有機ラジカルアニオンである。通常、酸はアルコール(任意の脂肪族または芳香族アルコールであることができる)の酸化によってアノードに生成する。該電解質においては、消滅するアニオンは通常適当な物質の還元によってカソードに生成する。多くの物質がカソードで還元されてアニオンを生成し、これがアノードで生成した酸を消滅させることができる。たとえば、溶解した分子状酸素はカソードで還元され、それによってO2 -および/またはO2 2-を生成させることができる。 Preferably, the active redox product is an acid and the annihilation redox product is an anion, preferably an organic radical anion. Usually, the acid is generated at the anode by oxidation of an alcohol (which can be any aliphatic or aromatic alcohol). In the electrolyte, the disappearing anion is usually generated at the cathode by reduction of a suitable substance. Many materials are reduced at the cathode to produce anions, which can extinguish the acid produced at the anode. For example, dissolved molecular oxygen can be reduced at the cathode, thereby producing O 2 − and / or O 2 2− .
適当なレドックス生成物を生成させる電解質の例はケトンと対応するアルコールとの組み合わせである。アノードにおけるアルコールの酸化はプロトン(活性レドックス生成物)を生成し、一方カソードにおけるケトンの還元はラジカルアニオンを生成し、これがアノードで生成したプロトンを消滅させることができる。 An example of an electrolyte that produces a suitable redox product is a combination of a ketone and the corresponding alcohol. Alcohol oxidation at the anode produces protons (active redox products), while reduction of the ketone at the cathode produces radical anions, which can extinguish the protons produced at the anode.
電解質中の反応は次のように表すことができる:
アノード:
The reaction in the electrolyte can be expressed as:
anode:
カソード: Cathode:
式中R1およびR2は独立的に任意に置換されたC1ないしC15ヒドロカルビル(ここで3
個までのC原子はN、Oおよび/またはS原子で置換させることができる)から選ばれるか;またはR1およびR2が一体となって任意に置換されたC1ないしC15シクロヒドロカ
ルビレン(ここで3個までのC原子は任意にN、Oおよび/またはS原子で置換させることができる)を形成する。
Wherein R 1 and R 2 are independently optionally substituted C 1 to C 15 hydrocarbyl (wherein 3
Up to C atoms can be substituted with N, O and / or S atoms); or R 1 and R 2 together, optionally substituted C 1 to C 15 cyclohydrocarbi To form a ren, where up to 3 C atoms can optionally be replaced by N, O and / or S atoms.
好ましくは、R1及びR2は独立的に任意に置換されたC1-8アルキル、C3-8シクロアルキルまたはフェニル基から選ばれる。
「ヒドロカルビル」という用語は本明細書では炭素と水素からなる一価の基を指すのに用いられる。したがってヒドロカルビル基はアルキル、アルケニル及びアルキニル基(直鎖状ならびに分枝鎖状)、シクロアルキル(ポリシクロアルキルを含む)、シクロアルケニル及びアリール基、ならびにアルキルシクロアルキル、アルキルポリシクロアルキル、アルキルアリール、アルケニルアリール、アルキニルアリール、シクロアルキルリールおよびシクロアルケニルアリール基のような前記の結合物を含む。
Preferably R 1 and R 2 are independently selected from optionally substituted C 1-8 alkyl, C 3-8 cycloalkyl or phenyl groups.
The term “hydrocarbyl” is used herein to refer to a monovalent group consisting of carbon and hydrogen. Thus, hydrocarbyl groups include alkyl, alkenyl and alkynyl groups (both linear and branched), cycloalkyl (including polycycloalkyl), cycloalkenyl and aryl groups, and alkylcycloalkyl, alkylpolycycloalkyl, alkylaryl, Such conjugations as alkenyl aryl, alkynyl aryl, cycloalkyl reel and cycloalkenyl aryl groups are included.
「ヒドロカルビレン」という用語は本明細書では炭素と水素からなる二価の基を指すのに用いられる。したがってシクロヒドロカルビレン基はシクロアルキレン、シクロアルケニレンおよびアリーレン基を含む。 The term “hydrocarbylene” is used herein to refer to a divalent group consisting of carbon and hydrogen. Cyclohydrocarbylene groups therefore include cycloalkylene, cycloalkenylene and arylene groups.
「アリール」という用語は本明細書ではフェニル、ナフチルまたはアントラシルのような芳香族基を指すのに用いられる。あるいはまた、アリール基がO、Nおよび/またはSで置換された炭素原子を有する場合には、アリールという用語はピリジル、ピロリル、チエニル、フラニル、イミダゾリル、トリアゾリル、キノリニル、イソキノリニル、オキサゾリルまたはイソオキサゾリルのような複素環式芳香族基を指す。 The term “aryl” is used herein to refer to an aromatic group such as phenyl, naphthyl or anthracyl. Alternatively, when the aryl group has a carbon atom substituted with O, N and / or S, the term aryl is as pyridyl, pyrrolyl, thienyl, furanyl, imidazolyl, triazolyl, quinolinyl, isoquinolinyl, oxazolyl or isoxazolyl. A heterocyclic aromatic group.
本明細書で任意の置換基に言及する場合には、該置換基は好ましくはC1ないしC6アルキル、C1ないしC6アルコキシ、チオ、C1ないしC6アルキルチオ、カルボキシ、カルボキシ(C1ないしC6)アルキル、ホルミル、C1ないしC6アルキルカルボニル、C1ないしC6アルキルカルボニルアルコキシ、ニトロ、トリハロメチル、ヒドロキシ、C1ないしC6アルキルヒドロキシ、ヒドロキシ(C1ないしC6)アルキル、アミノ、C1ないしC6アルキルアミノ、ジ(C1ないしC6アルキル)アミノ、アミノカルボキシ、C1ないしC6アルキルアミノカルボキシ、ジ(C1ないしC6アルキル)アミノカルボキシ、アミノカルボキシ(C1ないし6)アルキル、C1ないしC6アルキルアミノカルボキシ(C1ないしC6)アルキル、ジ(C1ないしC6アルキル)アミノカルボキシ(C1ないしC6)アルキル、C1ないしC6アルキルカルボニルアミノ、C5ないしC8シクロアルキル、C5ないしC8シクロアルキル(C1ないしC6)アルキル、C1ないしC6アルキルカルボニル(C1ないしC6アルキル)アミノ、ハロ、C1ないしC6アルキルハロ、スルファモイル、テトラゾイル及びシアノから選ばれる。 When referring to any substituents herein, the substituents are preferably C 1 to C 6 alkyl, C 1 to C 6 alkoxy, thio, C 1 to C 6 alkylthio, carboxy, carboxy (C 1 to C 6) alkyl, formyl, C 1 to C 6 alkylcarbonyl, to no C 1 C 6 alkylcarbonyl alkoxycarbonyl, nitro, trihalomethyl, hydroxy, C 1 to C 6 alkyl hydroxy, to hydroxy (C 1 no C 6) alkyl, Amino, C 1 to C 6 alkylamino, di (C 1 to C 6 alkyl) amino, aminocarboxy, C 1 to C 6 alkylaminocarboxy, di (C 1 to C 6 alkyl) aminocarboxy, aminocarboxy (C 1 To 6 ) alkyl, C 1 to C 6 alkylaminocarboxy (C 1 to C 6 ) alkyl, di (C 1 to C 6 alkyl) aminocarboxy (C 1 to C 6 ) alkyl, C 1 to C 6 alkylcarbonylamino, C 5 to C 8 cycloalkyl, C 5 to C 8 cycloalkyl (C 1 to C 6 ) alkyl, C 1 -C 6 alkylcarbonyl (C 1 -C 6 alkyl) amino, halo, C 1 -C 6 alkylhalo, sulfamoyl, tetrazoyl and cyano.
本明細書で用いる「ハロ」または「ハロゲン」はヨウ素、臭素、塩素またはフッ素を指す。
電解質のレドックス特性を変えるために、R1およびR2の性質を変化させることができる。たとえば、R1およびR2への置換基の導入は酸化または還元が起こる電位を変えることができる。
As used herein, “halo” or “halogen” refers to iodine, bromine, chlorine or fluorine.
In order to change the redox properties of the electrolyte, the properties of R 1 and R 2 can be varied. For example, the introduction of substituents at R 1 and R 2 can change the potential at which oxidation or reduction occurs.
ケトン/アルコール電解質の好ましい例は適当な有機溶剤中の2−プロパノン/イソプロパノールおよびベンゾフェノン/ベンズヒドロールである。
適当な電解質の他の例はベンゾキノン/ヒドロキノン及びそれらの誘導体である。該電解質は下記の組み合わせであることができる:
Preferred examples of ketone / alcohol electrolytes are 2-propanone / isopropanol and benzophenone / benzhydrol in suitable organic solvents.
Other examples of suitable electrolytes are benzoquinone / hydroquinone and their derivatives. The electrolyte can be a combination of:
式中R3、R4、R5及びR6は独立的に下記から選ばれる:
水素、ハロ、ニトロ、ヒドロキシル、チオ、ニトロ、アミノ、任意に置換されたC1ない
しC15ヒドロカルビル(ここで3個までのC原子は任意にN、Oおよび/またはS原子で置換させることができる);または
R3およびR4ならびに/またはR5及びR6が一体となって任意に置換されたC1ないしC15シクロヒドロカルビレン(式中C原子を3個までN、Oおよび/またはS原子で置換さ
せることができる)を形成する。
Wherein R 3 , R 4 , R 5 and R 6 are independently selected from:
Hydrogen, halo, nitro, hydroxyl, thio, nitro, amino, optionally substituted C 1 to C 15 hydrocarbyl (where up to 3 C atoms can optionally be replaced by N, O and / or S atoms) Or C 1 to C 15 cyclohydrocarbylene in which R 3 and R 4 and / or R 5 and R 6 are optionally substituted together (wherein up to 3 C atoms are N, O and / or Or can be substituted with S atoms).
好ましくは、R3、R4、R5およびR6は水素、任意に置換されたC1-8アルキルから独
立的に選ばれるかまたはR3/R4およびR5/R6が一体となってフェニレンのような任意に置換されたC5−C12アリ−レン基を形成する。
Preferably, R 3 , R 4 , R 5 and R 6 are independently selected from hydrogen, optionally substituted C 1-8 alkyl, or R 3 / R 4 and R 5 / R 6 are combined. To form an optionally substituted C 5 -C 12 arylene group such as phenylene.
電解質のレドックス特性を変えるため、たとえば酸化または還元が起こる正確な電位を変えるために、R3、R4、R5及びR6の性質を変化させることができる。ベンゾキノン/ヒドロキノン誘導体を原料とする電解質の好ましい例は適当な溶剤中のアントラキノン/アントラキノールおよびジュロキノン/ジュロキノールである。 The properties of R 3 , R 4 , R 5 and R 6 can be changed to change the redox properties of the electrolyte, for example to change the exact potential at which oxidation or reduction occurs. Preferred examples of electrolytes based on benzoquinone / hydroquinone derivatives are anthraquinone / anthraquinol and duroquinone / duroquinol in a suitable solvent.
好ましい態様では、電解質はアセトニトリル中のベンゾキノンとヒドロキノンの混合物を含む。この混合物は水素イオンである活性レドックス生成物をもたらす。水素イオン(プロトン)はベンゾキノンラジカルアニオンによって消滅可能となる。 In a preferred embodiment, the electrolyte comprises a mixture of benzoquinone and hydroquinone in acetonitrile. This mixture yields an active redox product that is hydrogen ions. Hydrogen ions (protons) can be extinguished by the benzoquinone radical anion.
具体的にはヒドロキノンはアノードで酸化されてベンゾキノンとプロトンを生成する: Specifically, hydroquinone is oxidized at the anode to produce benzoquinone and protons:
ヒドロキノンの酸化によって遊離したプロトンはほとんどアノードに局在化して、その
近傍の基板を修飾することができる。たとえば、プロトンは酸不安定性保護基を有する基板を脱保護することができる。
Most of the protons liberated by the oxidation of hydroquinone are localized at the anode, and the substrate in the vicinity thereof can be modified . For example, protons can deprotect substrates having acid labile protecting groups.
ベンゾキノンはカソードで還元されてベンゾキノンラジカルアニオンを生成する: Benzoquinone is reduced at the cathode to produce a benzoquinone radical anion:
ベンゾキノンラジカルアニオンはアセトニトリルのような溶剤中では比較的安定な種である。このラジカルアニオンは下記の反応により、アノードの極く近傍から脱離する偶発的なプロトンを消滅させる: The benzoquinone radical anion is a relatively stable species in solvents such as acetonitrile. This radical anion extinguishes incidental protons that desorb from the immediate vicinity of the anode by the following reaction:
このようにして、電極に生じた活性レドックス生成物、たとえばアノードに生じたプロトンを局在化させることによって処理される基板領域の溶解能を向上させることができる。 In this way, it is possible to improve the solubility of the substrate region to be processed by localizing active redox products generated at the electrode, for example protons generated at the anode.
本発明に用いられる電解質は水、THF(テトラヒドロフラン)、メタノール、エタノール、DMF(ジメチルホルムアミド)、ジクロロメタン、ジエチルエーテル、DMSO(ジメチルスルホキシド)またはアセトニトリルのような適当な溶剤を含むことができる。当業者には、溶剤の選択が電極におけるレドックス反応および/または消滅反応の動力学または平衡に影響することがあることが理解されよう。溶剤は溶解している種の反応性、たとえば錯体形成、水素結合、双極子相互作用または電荷非局在化に影響することがある。好ましくは、溶剤はラジカルアニオンを安定化させることができる非プロトン性溶剤である。非プロトン性溶剤の例はジクロロメタン、DMF、DMSO、アセトニトリル及びTHFである。より好ましくは溶剤がアセトニトリルである。 The electrolyte used in the present invention may contain a suitable solvent such as water, THF (tetrahydrofuran), methanol, ethanol, DMF (dimethylformamide), dichloromethane, diethyl ether, DMSO (dimethylsulfoxide) or acetonitrile. One skilled in the art will appreciate that the choice of solvent can affect the kinetics or equilibrium of the redox and / or quenching reactions at the electrode. Solvents can affect the reactivity of dissolved species, such as complex formation, hydrogen bonding, dipole interactions, or charge delocalization. Preferably, the solvent is an aprotic solvent capable of stabilizing radical anions. Examples of aprotic solvents are dichloromethane, DMF, DMSO, acetonitrile and THF. More preferably, the solvent is acetonitrile.
好ましい態様では、電解質はさらに伝導率向上剤を含む。伝導率向上剤は電解質の伝導率を高める物質である。伝導率向上剤が存在しない場合よりも低電圧で電解を行うことができるように、電解質の伝導率を高めることが望ましい。電解質に可溶なイオン物質がこの目的に適している。たとえば、電解質がアセトニトリルのような有機溶剤を含む場合には、適当な伝導率向上剤はテトラブチルアンモニウムヘキサフルオロホスフェートのようなテトラ(C1-8アルキル)アンモニウム塩であることができる。 In a preferred embodiment, the electrolyte further includes a conductivity improver. The conductivity improver is a substance that increases the conductivity of the electrolyte. It is desirable to increase the conductivity of the electrolyte so that electrolysis can be carried out at a lower voltage than when no conductivity improver is present. An ionic substance that is soluble in the electrolyte is suitable for this purpose. For example, when the electrolyte includes an organic solvent such as acetonitrile, a suitable conductivity improver can be a tetra (C 1-8 alkyl) ammonium salt such as tetrabutylammonium hexafluorophosphate.
当業者には電解質中の塩が、単に電解質の伝導率を高める以外に効果をもたらし得ることが理解されよう。塩は電極における消滅反応および/またはレドックス反応の働力学または平衡に影響を及ぼすことができる。塩の存在が溶解状態にある帯電種間の静電的相互作用に影響を及ぼすことは公知である。逆に、これは反応性に影響を及ぼすことができる。たとえば、電解質がヒドロキノン/ベンゾキノンのアセトニトリル溶液である場合には、テトラブチルアンモニウムヘキサフルオロホスフェートの添加は消滅反応の程度を修飾するのみならず伝導率を高めることが認められた。 Those skilled in the art will appreciate that salts in the electrolyte can have effects other than merely increasing the conductivity of the electrolyte. The salt can affect the kinetics or equilibrium of the annihilation and / or redox reaction at the electrode. It is known that the presence of salt affects the electrostatic interaction between charged species in solution. Conversely, this can affect reactivity. For example, when the electrolyte is a hydroquinone / benzoquinone acetonitrile solution, the addition of tetrabutylammonium hexafluorophosphate was found to not only modify the extent of the quenching reaction but also increase the conductivity.
本発明の方法はWO93/22480に記載されているような装置を用いて行うことができる。WO93/22480に記載されている装置は絶縁面上に離間した電極の配列を含む。電極は、電位を変えるために電気接続手段を備えた白金の付着物である。 The process according to the invention can be carried out using an apparatus as described in WO 93/22480. The device described in WO 93/22480 includes an array of electrodes spaced on an insulating surface. The electrode is a platinum deposit with electrical connection means to change the potential.
しかし、本発明の方法はイリジウム電極を用いて行うのが好ましいことが認められている。したがって、本発明は、表面を有する電気絶縁物質のブロック、および表面に離間して配列しているイリジウムの付着物を含み、各付着物が電位を変えるために電気接続手段を備えている、本明細書に記載した方法で用いるのに適する電極の配列を設ける。 However, it has been found that the method of the present invention is preferably performed using an iridium electrode. Accordingly, the present invention comprises a deposit of iridium are arranged spaced blocks of electrically insulating material, and a surface having a surface, the deposits are provided with electrical connection means for varying the potential, the An array of electrodes suitable for use in the method described in the specification is provided.
イリジウムを用いる利点はそれが導電性にすぐれ、化学的に不活性であるという点にある。さらに、イリジウムは本発明の方法を用いて行うことができる高電位において劣化を生じない。従来、白金が電極物質として用いられていた。しかし、白金は、とくに高電極電位において、シリコンウエハーのような物質に十分に接着しないことが認められた。本明細書に述べた内部消滅反応は、処理される基板において溶解能の著しい損失なしに高電極電位の長時間使用を可能にする。高電極電位の使用は電極の設計変更を必要とした。 The advantage of using iridium is that it is highly conductive and chemically inert. Furthermore, iridium does not degrade at the high potentials that can be performed using the method of the present invention. Conventionally, platinum has been used as an electrode material. However, it has been observed that platinum does not adhere well to materials such as silicon wafers, especially at high electrode potentials. The internal annihilation reaction described herein allows long-term use of a high electrode potential without significant loss of solubility in the substrate being processed. The use of a high electrode potential required electrode design changes.
アルミニウム、銀及び金を含む多くの金属について電極としての適性を試験した。しかし、驚くべきことに、本発明者らはイリジウムが電極として優れた最良の物質であることを認めた。イリジウムは電解中劣化せずに、酸化シリコンウエハーのような物質によく接着することが認められた。 Many metals including aluminum, silver and gold were tested for suitability as electrodes. Surprisingly, however, the inventors have recognized that iridium is the best material excellent as an electrode. Iridium was found to adhere well to materials such as silicon oxide wafers without degradation during electrolysis.
不溶性ポリマー、セラミック酸化物(たとえばアルミナ)または酸化シリコンウエハーのような適当な物質から電極の配列を形成させる物質のブロックを作ることができる。好ましくは、該物質は酸化シリコンウエハーである。 A block of material can be made from an appropriate material such as an insoluble polymer, ceramic oxide (eg, alumina) or silicon oxide wafer to form an array of electrodes. Preferably, the material is a silicon oxide wafer.
適当な方法を用いてイリジウム電極の配列を作ることができる。好ましい態様では、電極の配列を下記工程を含む方法によって作る:
(i)表面に二酸化シリコン層を有するシリコンウエハーを設け;
(ii)離間して配列をなしたイリジウムを二酸化シリコン表面に付着させ;そして
(iii)200−500℃の範囲の温度の空気中でイリジウムをアニールする。
An array of iridium electrodes can be made using any suitable method. In a preferred embodiment, the electrode array is made by a method comprising the following steps:
(I) providing a silicon wafer having a silicon dioxide layer on the surface;
(Ii) deposit spaced apart iridium on the silicon dioxide surface; and (iii) anneal the iridium in air at a temperature in the range of 200-500 ° C.
典型的な方法では、シリコンウエハー上の二酸化シリコン層にポシティブ有機フォトレジストを適用する。適当なフォトマスクを通してフォトレジストを紫外線に暴露して、二酸化シリコンの領域を露出させる。電子ビームガンを用いて物質表面にイリジウム金属を付着させる。ついでフォトレジスト層を除いて電極の配列を露出させる。最後に、イリジウム電極を空気中でアニールしてウエハー表面に対する接着性を向上させる。典型的には、イリジウムを約350℃で15分から3時間、好ましくは約1時間アニールする。 In a typical method, a positive organic photoresist is applied to a silicon dioxide layer on a silicon wafer. The photoresist is exposed to UV light through a suitable photomask to expose the silicon dioxide region. Iridium metal is deposited on the surface of the material using an electron beam gun. The electrode array is then exposed except for the photoresist layer. Finally, the iridium electrode is annealed in air to improve adhesion to the wafer surface. Typically, iridium is annealed at about 350 ° C. for 15 minutes to 3 hours, preferably about 1 hour.
アニーリング工程はイリジウムの二酸化シリコンに対する接着性にとって重要である。イリジウムが2545℃の融点を有すると仮定すると、約350℃の温度におけるアニーリングの効果は驚くべきものである。50nmのイリジウム層の場合でさえも、アニール
された電極は鋼鉄のスクラペル刄によるスクラッチに耐え得ることが認められている。さらに、イリジウム電極は本発明の方法で用いることができる苛酷な化学的環境、高電位及び高電流に耐えることができる。
The annealing process is important for the adhesion of iridium to silicon dioxide. Assuming that iridium has a melting point of 2545 ° C., the effect of annealing at a temperature of about 350 ° C. is surprising. It has been observed that even in the case of a 50 nm iridium layer, the annealed electrode can withstand scratching by a steel scrampel. Furthermore, the iridium electrode can withstand the harsh chemical environment, high potential and high current that can be used in the method of the present invention.
電極は0.5mm未満に離間した平行線の配列であるのが好ましい。電極は好ましくは、0.1−200ミクロン、より好ましくは1−100ミクロン、さらに好ましくは10−60ミクロンに離間している。 The electrodes are preferably an array of parallel lines spaced less than 0.5 mm. The electrodes are preferably spaced 0.1-200 microns, more preferably 1-100 microns, and even more preferably 10-60 microns.
1つ以上の電極を対向電極として使用するのが好ましい。電気化学的に基板を処理する通常の方法とは対照的に、修飾される基板は電極または対向電極を形成しないことが好ましい。したがって、本発明の方法はWO93/22480に記載されている方法に類似することができる。さらに、処理される基板は電気絶縁面であることができる。 One or more electrodes are preferably used as the counter electrode. In contrast to the usual methods of electrochemically treating a substrate, it is preferred that the substrate to be modified does not form an electrode or counter electrode. Therefore, the method of the present invention can be similar to the method described in WO93 / 22480. Furthermore, the substrate to be processed can be an electrically insulating surface.
好ましい態様では、本発明はいくつかの処理を順次行う方法を提供する。したがって、配列の電極は、配列中の1つ以上の電極の選択された1組の電位を変えることによって各処理を行うように接続するのが好ましい。 In a preferred embodiment, the present invention provides a method for performing several processes sequentially. Accordingly, the electrodes of the array are preferably connected to perform each treatment by changing a selected set of potentials of one or more electrodes in the array.
好ましくは、本発明の方法において、処理される基板は固体表面に結合された物質を含む。固体表面は電極を有する表面であることができる。好ましくは、固体表面は電極近傍の異なる面である。活性レドックス生成物は固体に結合された物質の化学的修飾を生じさせるために用いることができる。当業者は多くの活性レドックス生成物および対応する化学的修飾を着想することができる。好ましい態様では、処理される基板は酸不安定性保護基を有する物質を含む。この好ましい態様では、電解質中で酸を生じる電位におけるアノードとして配列中の少なくとも1つの電極を接続することによって処理を行う。ついで、このように生じた酸はアノード近傍領域内の表面に結合された物質から酸不安定性保護基を除去する。 Preferably, in the method of the invention, the substrate to be treated comprises a substance bound to a solid surface. The solid surface can be a surface with electrodes. Preferably, the solid surface is a different surface near the electrode. The active redox product can be used to cause chemical modification of the material bound to the solid. One skilled in the art can envision many active redox products and corresponding chemical modifications . In a preferred embodiment, the substrate to be treated comprises a material having an acid labile protecting group. In this preferred embodiment, the treatment is performed by connecting at least one electrode in the array as an anode at a potential that produces acid in the electrolyte. The acid thus generated then removes the acid labile protecting group from the material bound to the surface in the region near the anode.
しかし、活性レドックス生成物が基板における種々の化学反応に関与し得ることは理解されよう。1つの潜在的用途はSchusterらがScience,2000,289,96−101に述べた電気化学的微細加工技術にある。Schusterが述べたツールは、本発明による電解質を用い、レドックス生成物の拡散を防ぐために対向電極のリングでプローブチップを包囲することによって適応させることができる。このように、本発明は既存のナノスケールパターン化技術に適用することができる。たとえば、表面から少量の物質の除去を必要とするエッチングまたはナノ加工用に酸を用いることができる。 However, it will be understood that the active redox product can participate in various chemical reactions on the substrate. One potential application is in the electrochemical microfabrication technique described by Schuster et al., Science , 2000, 289 , 96-101. The tool described by Schuster can be adapted using the electrolyte according to the present invention and surrounding the probe tip with a ring of counter electrodes to prevent diffusion of the redox product. Thus, the present invention can be applied to existing nanoscale patterning technology. For example, acids can be used for etching or nanofabrication that requires the removal of a small amount of material from the surface.
あるいはまた、酸によって促進させる有機又は無機反応に酸を関与させることもできる。当業者は本発明への使用に適するかもしれない極めて多くの潜在的反応を知っていよう。有機反応の例にはエポキシド開環、多重結合への付加、転位、置換(たとえば第三級アルコールのSNI置換)、脱離、エノールの後続反応を伴うエノール生成、および有機酸
塩の単純なプロトン付加がある。
Alternatively, the acid can be involved in an organic or inorganic reaction promoted by the acid. Those skilled in the art will be aware of the numerous potential reactions that may be suitable for use in the present invention. Epoxide opening Examples of organic reactions, addition to multiple bonds, rearrangement, substitution (e.g., S N I-substituted tertiary alcohols), elimination, enol product with subsequent reaction of the enol, and a simple organic acid salts There is a protonation.
同様に、活性レドックス生成物がハロゲンである場合には、ハロゲンを温和な酸化、基板の漂白またはハロゲン化に関与させることができる。活性レドクッス生成物はハライドイオンであることもでき、それを置換反応に用いることができる。 Similarly, if the active redox product is a halogen, the halogen can be involved in mild oxidation, substrate bleaching or halogenation. The active redox product can also be a halide ion, which can be used in the substitution reaction.
本発明の方法は、表面に結合された小さな有機化合物のライブラリの合成に用いることもできる(たとえばSchreiber,Science 2000,287,1964−1969参照)。小さな有機化合物のライブラリは薬剤発見の分野で重要である。本方法を適用できる反応の範囲はそれが該ライブラリの合成に最適であることを意味する。 The methods of the invention can also be used to synthesize libraries of small organic compounds bound to a surface (see, for example, Schreiber, Science 2000, 287 , 1964-1969). Small organic compound libraries are important in the field of drug discovery. The range of reactions to which this method can be applied means that it is optimal for the synthesis of the library.
好ましくは、オリゴヌクレオチド、多糖類およびタンパク質のようなオリゴマーの段階的化学合成に本発明の方法が用いられる。より好ましくは、本発明の方法はオリゴヌクレオチドの合成に用いられる。 Preferably, the method of the invention is used for the stepwise chemical synthesis of oligomers such as oligonucleotides, polysaccharides and proteins. More preferably, the method of the invention is used for the synthesis of oligonucleotides.
1組のオリゴマーの合成法は下記:
(a)保護基を有する物質の配列、基板に接している電解質および基板近傍にあって電
解質に接触している電極の配列を結合させた基板を設け;
(b)選択された物質から保護基を除く活性レドックス生成物を生成させるように1つ
以上の電極の電位を選択的に変え;
(c)保護モノマーと工程(b)で作った脱保護物質とをカップルさせ;そして
(d)1組のオリゴマーを合成するように、工程(b)の工程で選んだ1つ以上の電極
を変えながら、工程(b)および(c)を繰り返し、
活性レドックス生成物が少なくとも他の1つのレドックス生成物によって消滅可能となるように電解質を選ぶことを特徴とした工程を含むことができる。
A method for synthesizing a set of oligomers is as follows:
(A) providing a substrate to which an array of substances having protective groups, an electrolyte in contact with the substrate, and an array of electrodes in the vicinity of the substrate and in contact with the electrolyte are combined;
(B) selectively altering the potential of one or more electrodes to produce an active redox product that removes the protecting group from the selected material;
(C) couple the protective monomer with the deprotection material made in step (b); and (d) one or more electrodes selected in step (b) to synthesize a set of oligomers. While changing, repeat steps (b) and (c)
A step characterized by selecting an electrolyte such that the active redox product can be extinguished by at least one other redox product.
オリゴヌクレオチドの合成において前記の方法を用いる場合には、活性レドックス生成物が好ましくはプロトンで、保護基が好ましくはフラニルヒドロキシル基を保護するトリチルまたはジメトキシトリチル(DMT)基のような酸不安定性保護基である。当業者にはWO93/22480に記載されているようにこの方法がDNAチップの連結合成に特に適していることが理解されよう。 When using the above method in the synthesis of the oligonucleotide, the active redox product is preferably a proton and the acid labile, such as a trityl or dimethoxytrityl (DMT) group, preferably protecting the furanyl hydroxyl group Protecting group. One skilled in the art will appreciate that this method is particularly suitable for ligated synthesis of DNA chips, as described in WO 93/22480.
前記の方法はペプチドの合成に用いることもできる。たとえば、アノードに生じたプロトンを用い、窒素原子から第三級ブチルオキシカルボニル(Boc)保護基の逐次除去によってペプチドを合成することができる。他のオリゴマーの合成も当業者には容易に明らかであろう。 The above methods can also be used for peptide synthesis. For example, peptides can be synthesized by sequential removal of tertiary butyloxycarbonyl (Boc) protecting groups from nitrogen atoms using protons generated at the anode. The synthesis of other oligomers will be readily apparent to those skilled in the art.
図面を参照しながら本発明をさらに詳細に説明しよう。
図1について説明すると、電極の配列が高抵抗率の酸化シリコンウエハー(1)上に配置されており、その上面にイリジウム層が付着している。ポジティブレジスト写真平版法を用いシリコンウエハー上のイリジウム層中にギャップ(2)を形成させて、平行電極の配列(3)を得る。各電極及び各ギャップの幅は約40ミクロンである。電極配列の上にシリコンウエハー(4)を置く。シリコンウエハーを修飾して表面にDMT保護ヌクレオシドを存在させる。
The invention will be described in more detail with reference to the drawings.
Referring to FIG. 1, an electrode array is arranged on a silicon oxide wafer (1) having a high resistivity, and an iridium layer is attached to the upper surface thereof. A gap (2) is formed in the iridium layer on the silicon wafer using a positive resist photolithographic method to obtain an array (3) of parallel electrodes. The width of each electrode and each gap is about 40 microns. A silicon wafer (4) is placed on the electrode array. The silicon wafer is modified to make DMT protected nucleosides present on the surface.
図2について説明すると、電極の配列および基板の一部が示されている。中央の電極がアノードで他の2つの電極がカソードである。アセトニトリル中にベンゾキノンおよびヒドロキノンを含む電解質が電極および処理される基板と接触している。アノードにおいて、ヒドロキノンを酸化して、ベンゾキノンおよびプロトンを生成させる。大部分のプロトンはアノード近傍の基板領域に閉じ込められる。したがって、閉じ込められたプロトンは基板に結合された保護ヌクレオチド部分からDMT基を除去する。しかし、プロトンの一部はアノードとカソードとの間の帯域に拡散することができる。 Referring to FIG. 2, the arrangement of electrodes and a portion of the substrate are shown. The central electrode is the anode and the other two electrodes are the cathode. An electrolyte comprising benzoquinone and hydroquinone in acetonitrile is in contact with the electrode and the substrate to be treated. At the anode, hydroquinone is oxidized to produce benzoquinone and protons. Most protons are confined in the substrate region near the anode. Thus, the trapped proton removes the DMT group from the protected nucleotide moiety bound to the substrate. However, some of the protons can diffuse into the zone between the anode and cathode.
カソードにおいて、ベンゾキノンの還元によってベンゾキノンラジカルアニオンが生成する。ベンゾキノンラジカルアニオンは比較的安定な種で、アノードとカソードとの間の帯域に拡散することができる。ベンゾキノンラジカルアニオンはこの帯域内に拡散しているプロトンを消滅させて、図示のようにヒドロキノン及びベンゾキノンを生成させる。したがって、拡散したプロトンはアノード近傍でない基板領域における反応を阻止する。電極間の領域においてプロトンが偶発的に反応するのを阻止することによって、パターン化された基板の分解能が改善される。 At the cathode, benzoquinone radical anions are generated by reduction of benzoquinone. The benzoquinone radical anion is a relatively stable species and can diffuse into the zone between the anode and the cathode. The benzoquinone radical anion extinguishes the protons diffusing in this zone and produces hydroquinone and benzoquinone as shown. Thus, the diffused protons prevent reaction in the substrate region that is not near the anode. By preventing accidental reaction of protons in the region between the electrodes, the resolution of the patterned substrate is improved.
図2はまた基板の特定領域からの前記脱トリチル化に続く基板の次の処理をも示す。標準条件下で遊離ヒドロキシル基をアセチル化してDMT基の残部を除去する。得られた遊離ヒドロキシル基を蛍光染料(Cy5 ホスホルアミダイト)で処理し、共焦点検鏡法によって基板のイメージ化を可能にする。したがって、初期の脱トリチル化工程の分解能を好適に解析することができる。しかし、前記の方法論を用いて基板の選択された領域にオリゴマーを合成できることは容易に明らかであろう。 FIG. 2 also shows the next processing of the substrate following said detritylation from a specific area of the substrate. The free hydroxyl group is acetylated under standard conditions to remove the remainder of the DMT group. The resulting free hydroxyl group is treated with a fluorescent dye (Cy5 phosphoramidite) to allow imaging of the substrate by confocal microscopy. Therefore, the resolution of the initial detritylation process can be suitably analyzed. However, it will be readily apparent that oligomers can be synthesized in selected regions of the substrate using the methodology described above.
図3について説明すると、共焦点検鏡法を用いて、1.33Vの一定電位における電解時間変動の影響を示す。この図において、明るい領域は、電解中にDMT基が除去されなかった基板領域の蛍光を示す。その後蛍光染料Cy5で残留DMT基を置換させる。明るい領域は通常隣接カソードである。暗い領域は電解中にDMT基が除去された領域である。得られた遊離ヒドロキシル基を非蛍光性アセチル基でアセチル化する。暗い領域は通常隣接アノードである。 Referring to FIG. 3, the effect of electrolysis time variation at a constant potential of 1.33 V is shown using confocal microscopy. In this figure, the bright area shows the fluorescence of the substrate area where the DMT group was not removed during electrolysis. Thereafter, the residual DMT group is substituted with the fluorescent dye Cy5. The bright areas are usually adjacent cathodes. The dark area is the area where the DMT group has been removed during electrolysis. The resulting free hydroxyl group is acetylated with a non-fluorescent acetyl group. The dark areas are usually adjacent anodes.
図3は、2.0s後には、アノード隣接領域にはDMT基が完全に除去されることを示す。さらに、パターン化基板の分解能は80s後も変わらない。アノードおよびカソード近傍領域に該当するシャープに示された筋がある。これは長時間の電解後でさえも、電解中に生じたプロトンはアノード近傍領域に完全に閉じ込められていることを示す。 FIG. 3 shows that after 2.0 s, the DMT group is completely removed in the anode adjacent region. Furthermore, the resolution of the patterned substrate remains unchanged after 80s. There are sharply shown streaks that correspond to the areas near the anode and cathode. This indicates that even after prolonged electrolysis, protons generated during electrolysis are completely confined in the region near the anode.
図4(a)および(b)は電極の配列からのカソードの除去の著しい効果を示す。暗い領域はDMT基が除去された領域を示す。電極電位を1.33Vに固定する。いったん中央のカソードを除去すると、アノードに生じたプロトンは中央領域内に自由に拡散することができる。これは明らかにアノーに生じたプロトンを消滅させることができる種を生成させるカソードを有するという閉じ込め効果を示す。 Figures 4 (a) and (b) show the significant effect of removing the cathode from the array of electrodes. The dark area indicates the area where the DMT group has been removed. The electrode potential is fixed at 1.33V. Once the central cathode is removed, protons generated at the anode are free to diffuse into the central region. This clearly shows the confinement effect of having a cathode that produces a species that can annihilate protons generated in the ano.
本発明の方法を下記の実施例でさらに詳細に説明する。
(実施例)
(実験の部)
(電極アセンブリ)
通常のポジティブレジスト写真平版法を用いて高抵抗率の酸化シリコンウエハー上にイリジウム金属(厚さ50nm)電極を生成させた。酸化シリコンウエハーをポジティブフォトレジスト層で被覆しフォトマスクを通して紫外線に暴露した。ウエハーを脱イオン水で洗い、100℃で20分焼き、次いで反応性イオンエッチングで「脱スカム」した。長さ約7500ミクロン、幅40ミクロンの96個の平行電極の配列を得るようにフォトマスクを選んだ。隣接電極間のギャップは約40ミクロンであった。
The method of the present invention is described in further detail in the following examples.
(Example)
(Experimental part)
(Electrode assembly)
An iridium metal (thickness 50 nm) electrode was formed on a high resistivity silicon oxide wafer using a normal positive resist photolithography method. A silicon oxide wafer was coated with a positive photoresist layer and exposed to UV light through a photomask. The wafer was washed with deionized water, baked at 100 ° C. for 20 minutes, and then “de-scummed” by reactive ion etching. The photomask was chosen to obtain an array of 96 parallel electrodes approximately 7500 microns long and 40 microns wide. The gap between adjacent electrodes was about 40 microns.
電子ビーム法によってウエハー上にイリジウムを付着させた。イリジウム金属を真空蒸発器内のるつぼに入れ、2,3個のウエハーを真空蒸発器内のるつぼから約20cmのところに置いた。チャンバーを3×10-6Torrに排気し、5kVで300mAにセットした電子ビームガンで金属を約3分間加熱することによってウエハーに500nmのイリジウムを被覆した。 Iridium was deposited on the wafer by the electron beam method. Iridium metal was placed in the crucible in the vacuum evaporator and a few wafers were placed about 20 cm from the crucible in the vacuum evaporator. The chamber was evacuated to 3 × 10 −6 Torr and the wafer was coated with 500 nm iridium by heating the metal with an electron beam gun set at 5 kV and 300 mA for about 3 minutes.
ついでウエハーを超音波アセトン浴中に30分間入れてフォトレジスト層を除き、こうして電極の配列を露出させた。空気中で電極を350℃で約1時間アニールして、ウエハー基板との接着力を高め、かつ反応性イオンエッチングで洗浄した。 The wafer was then placed in an ultrasonic acetone bath for 30 minutes to remove the photoresist layer, thus exposing the array of electrodes. The electrode was annealed in air at 350 ° C. for about 1 hour to increase the adhesion with the wafer substrate and was cleaned by reactive ion etching.
加熱アニーリング及び洗浄工程後、各電極をそれぞれ超音波金線ボンディングによって印刷回路板に接続し、そこではディジタル制御化「アナログスイッチ」集積回路が一定の非ブロック化工程のために選んだ電極を活性化させる。多重独立操作性増幅器制御電圧源として電流を加えた。平行低ノイズ計装増幅器帰還回路は絶えず各電極においてナノアン
プ精密電流を測定した。この操作のためにとくにプログラムされたコンピューターがすべての電圧、タイミング、及び電極切替ならびに収集した電流測定データを制御した。
After heating annealing and cleaning process, each electrode is connected to printed circuit board by ultrasonic gold wire bonding, where digitally controlled “analog switch” integrated circuit activates selected electrode for certain deblocking process Make it. Current was applied as a multiple independent operability amplifier control voltage source. The parallel low noise instrumentation amplifier feedback circuit constantly measured the nanoamp precision current at each electrode. A computer specially programmed for this operation controlled all voltage, timing, and electrode switching and collected current measurement data.
(固体支持体アセンブリ)
研磨した二酸化シリコンウエハーをパターン化した基板支持体として使用した。電気化学的パターン化に先立って、ウエハー表面をリンカー分子で機能化して、有機試薬を結合させた(Gray,D.E.,CaseGreen,S.C.,Fell,T.S.,Dobson,P.J.&Southern,E.M.Ellipsometric and interferometric characterization of DNA probes immobilized on a combinatorial array.Langmuir 13,2833−2842(1997))。ウエハーを5mlのグリシドオキシプロピルトリメトキシシラン含有アンプルとともに、容積が19.1lの真空炉のチャンバーに入れた。炉を185℃に加熱した後、アンプルを205℃に加熱して、チャンバーを25−30mBarに脱気した。約2.5mlのシランの蒸発後、チャンバーを減圧下(10-3Torr)で冷却した。グリシドオキシプロピルトリメトキシシラン誘導ウエハーを微量硫酸含有ポリエチレングリコール100%溶液中に浸せきすることによって「リンカー分子」を結合させた。ついで通常のオリゴヌクレオチド合成法により、DMT含有ホスホルアミダイトをポリエチレングリコールの遊離ヒドロキシルに共有結合させた(Beaucage,S.L.&Iyer,R.P.Advances in the Synthesis of Oligonucleotides by the Phosphoramidite Approach.Tetrahedron 48,2223−2311(1992))。このように調製したウエハー基板をパターン化に使用するために1cm平方に切断した。
(Solid support assembly)
A polished silicon dioxide wafer was used as a patterned substrate support. Prior to electrochemical patterning, the wafer surface was functionalized with a linker molecule to bind organic reagents (Gray, DE, CaseGreen, SC, Fell, TS, Dobson, P J. & Southern, EM Ellipsometric and interferometric char- acterization of DNA probes on a combinatorial array. Langmuir 13 , 1933-42). The wafer was placed in a vacuum furnace chamber with a volume of 19.1 l along with 5 ml glycidoxypropyltrimethoxysilane containing ampoule. After heating the furnace to 185 ° C, the ampoule was heated to 205 ° C and the chamber was evacuated to 25-30 mBar. After evaporation of about 2.5 ml of silane, the chamber was cooled under reduced pressure (10 −3 Torr). “Linker molecules” were attached by immersing the glycidoxypropyltrimethoxysilane-derived wafer in a 100% solution of polyethylene glycol in traces of sulfuric acid. Followed by conventional oligonucleotide synthesis methods, and the DMT-containing phosphoramidite is covalently bonded to the free hydroxyl of polyethylene glycol (Beaucage, S.L. & Iyer, R.P.Advances in the Synthesis of Oligonucleotides by the Phosphoramidite Approach. Tetrahedron 48 , 2223-2311 (1992)). The wafer substrate thus prepared was cut into 1 cm square for use in patterning.
(実施例1)
電極の配列(前記のように調製)を固体支持体から20ミクロン離れた距離に置いた。固体支持体を前記のように調製して、チミジンホスホルアミダイトをポリエチレングリコールリンカー分子に結合させた。チミジンホスホルアミダイトはDMT基によって5’−ヒドロキシル基を保護した。
(Example 1)
The array of electrodes (prepared as described above) was placed at a distance of 20 microns from the solid support. A solid support was prepared as described above to attach thymidine phosphoramidite to a polyethylene glycol linker molecule. Thymidine phosphoramidite protected the 5'-hydroxyl group with a DMT group.
電解質溶液(25mM ヒドロキノン/25mM キノン/25mM テトラブチルアンモニウムヘキサフルオロホスフェートの無水アセトニトリル溶液)を電極の配列と固体支持体との間のキャビティに導入した。ついで選択されたアノードをカソードに対して1.33Vにセットして、図3に示すように、電圧を2から80s維持した。 An electrolyte solution (25 mM hydroquinone / 25 mM quinone / 25 mM tetrabutylammonium hexafluorophosphate in anhydrous acetonitrile) was introduced into the cavity between the electrode array and the solid support. The selected anode was then set to 1.33 V with respect to the cathode, and the voltage was maintained from 2 to 80 s, as shown in FIG.
電解後に、シリコンウエハーをアセトニトリルで洗い、標準法を用いて無水酢酸でアセチル化した。この工程で、露出したヒドロキシ基を有するシリコンウエハーのDMT脱保護部分のみをアセチル化した。 After electrolysis, the silicon wafer was washed with acetonitrile and acetylated with acetic anhydride using standard methods. In this step, only the DMT deprotected portion of the silicon wafer having an exposed hydroxy group was acetylated.
ついで基板全体をジクロロ酢酸のジクロロメタン溶液で処理することによって、電気化学的工程で除去されなかったDMT基を除去した。こうして露出したヒドロキシル基を、標準のホスホルアミデイトカップリング法を用いて蛍光染料Cy5にカップルさせ、その結果共焦点検鏡法でCy5の蛍光を観察することによって、酸の電気化学的生成によって生じたパターンを明らかにした。この工程順序を図2に示す。 Then, the entire substrate was treated with a dichloromethane solution of dichloroacetic acid to remove DMT groups that were not removed by the electrochemical step. By electrochemically producing the acid, the hydroxyl group thus exposed is coupled to the fluorescent dye Cy5 using standard phosphoramidate coupling methods, so that the fluorescence of Cy5 is observed by confocal microscopy. The resulting pattern was revealed. This process sequence is shown in FIG.
図3は1.33Vにおける電解時間増大の影響を示す。約2.0s後、いったん最大帯域幅に達すると、電解80.0s後でさえも、基板の分解能は維持される。
(実施例2)
さきに述べた通りに実施例1を正確に繰り返したが、ただし選択されたアノードにおいては1.33Vの電圧を16s維持した。図4(a)および(b)に示したように、カソ
ード除去の著しい効果を調べた。中央のカソードを除いた場合には、拡散したプロトンの制御がない。拡散したプロトンは中央領域になだれ込むことができ、アノード周囲に局在化しない。これは、図4(b)の蛍光基を含まない中央の暗い領域によって実証される。
FIG. 3 shows the effect of increasing electrolysis time at 1.33V. Once the maximum bandwidth is reached after about 2.0 s, the resolution of the substrate is maintained even after 80.0 s of electrolysis.
(Example 2)
Example 1 was repeated exactly as described above, except that the selected anode maintained a voltage of 1.33 V for 16 s. As shown in FIGS. 4 (a) and (b), the significant effect of cathode removal was investigated. When the central cathode is removed, there is no control of diffused protons. The diffused protons can sneak into the central region and do not localize around the anode. This is demonstrated by the central dark region that does not contain the fluorescent group of FIG.
(実施例3)
固体支持体上の17量体オリゴマーの合成において、電気化学的に制御されたDMT脱保護16工程とともに、実施例1に述べた一般的方法を使用した。使用法は実施例1と同じであったが、ただし電極の配列は基板表面から40ミクロン離れた距離に置いた。
(Example 3)
In the synthesis of 17-mer oligomers on a solid support, the general method described in Example 1 was used along with the 16 steps of electrochemically controlled DMT deprotection. The method of use was the same as in Example 1, except that the electrode array was placed at a distance of 40 microns from the substrate surface.
ジメトキシトリチル(DMT)保護デオキシアデノシン(dA)残基の均一被覆を、標準ホスホルアラミダイトカップリング化学を用いて固体支持体上のポリエチレングリコールリンカー基にカップルさせた。 A uniform coating of dimethoxytrityl (DMT) protected deoxyadenosine (dA) residues was coupled to a polyethylene glycol linker group on a solid support using standard phosphoramidite coupling chemistry.
アセトニトリルによる徹底的な洗浄後、実施例1に用いた電解質を電極の配列と固体支持体との間のキャビティに導入した。選択されたアノードに1.33Vの電位を9s加えて、その近傍のDMT基を除去した。2つのカソードによって該アノードの側面を包囲させた。 After thorough cleaning with acetonitrile, the electrolyte used in Example 1 was introduced into the cavity between the electrode array and the solid support. A potential of 1.33 V was applied to the selected anode for 9 s to remove the DMT group in the vicinity thereof. Two anodes surrounded the side of the anode.
アセトニトリルによるなお一層の洗浄に続いて、標準ホスホルアラミドカップリング法を用いて、DMT保護ヌクレオチド残基を露出ヒドロキシル基にカップルさせた。得られた三価のリン結合をヨウ素で酸化して五価のリン結合を得、さらにシリコンウエハー全体をアセトニトリルに続いてジクロロメタンで洗った。固体支持体上のオリゴヌクレオチドの合成に用いた標準のカップリング及び酸化工程は当該分野では周知である(たとえばABI Synthesizer Manual,Section 2:“Chemistry for Automated DNA Synthesis”参照)。 Following further washing with acetonitrile, DMT protected nucleotide residues were coupled to exposed hydroxyl groups using standard phosphoraramid coupling methods. The obtained trivalent phosphorus bond was oxidized with iodine to obtain a pentavalent phosphorus bond, and the entire silicon wafer was washed with acetonitrile followed by dichloromethane. Standard coupling and oxidation steps used to synthesize oligonucleotides on solid supports are well known in the art (see, eg, ABI Synthesizer Manual , Section 2: “Chemistry for Automated DNA Synthesis”).
ホスホルアミダイトカップリング工程に導入したDMT保護ヌクレオチド残基を変えて、この方法を繰り返した。このようにして、固体支持体上にオリゴヌクレオチドを合成した。 This method was repeated, changing the DMT protected nucleotide residues introduced into the phosphoramidite coupling step. In this way, oligonucleotides were synthesized on the solid support.
2種の17量体オリゴヌクレオチド:野生型“A”ヒトのヘモグロビンmRNAおよび対応する“S”型鎌型赤血球変位体mRNAの合成において、適切にプログラムされたコンピューターにより制御された自動装置でこの方法を使用した。17量体は固体支持体の一定のストリップ上にすぐれた収率で形成された。WO93/22480に記載されているように、この方法がDNAチップの連結合成に使用可能なことは当業者には容易に理解されよう。 Two 17-mer oligonucleotides: This method with an appropriately programmed computer-controlled automated device in the synthesis of wild type “A” human hemoglobin mRNA and the corresponding “S” sickle erythrocyte mRNA. It was used. The 17-mer formed in excellent yield on a constant strip of solid support. One skilled in the art will readily appreciate that this method can be used for ligated synthesis of DNA chips, as described in WO 93/22480.
いうまでもなく本発明は実施例によって述べただけであり、細部の変更が本発明の範囲内に入ることは理解されよう。 Of course, it will be understood that the present invention has been described by way of example only and that variations in detail fall within the scope of the invention.
Claims (32)
水素、ハロ、ヒドロキシル、チオ、ニトロ、アミノ、任意に置換されたC1〜C15ヒドロカルビル(ここで3個までのC原子は任意にN、Oおよび/またはS原子で置換させることができる)から独立して選ばれるか;または
R3およびR4ならびに/またはR5およびR6は一体となって任意に置換されたC1〜C15シクロヒドロカルビレン(ここで3個までのC原子は任意にN、Oおよび/またはS原子で置換させることができる)を形成する}の溶液である、請求項1〜8のいずれか1項に記載の方法。Electrolyte
Hydrogen, halo, hydroxyl, thio, nitro, amino, optionally substituted C 1 -C 15 hydrocarbyl (where up to 3 C atoms can optionally be replaced by N, O and / or S atoms) Or R 3 and R 4 and / or R 5 and R 6 together are optionally substituted C 1 -C 15 cyclohydrocarbylene (wherein up to 3 C atoms Is optionally formed by N, O and / or S atoms).
(b)(i)活性レドックス生成物であって選択された物質から該保護基を除去するもの、及び第2レドックス生成物を生じさせるように、1つ以上の該電極の電位を選択的に変え;
(c)保護されたモノマーと工程(b)で生じさせた脱保護された物質をカップリングさせ;そして
(d)1組のオリゴマーを合成するように、工程(b)で選ばれる1つ以上の電極を変えながら、工程(b)及び(c)を繰り返す
工程を含み、該活性レドックス生成物が第2レドックス生成物によって消滅可能となるように該電解質を選ぶことを特徴とし、修飾される基板が電極を形成せず、かつ当該電極の列から離れている、1組のオリゴマーの合成法。(A) providing a substrate bonded to a row of substances having a protecting group, an electrolyte in contact with the substrate, and a row of electrodes in the vicinity of the substrate and in contact with the electrolyte;
(B) (i) an active redox product that removes the protecting group from the selected material, and the potential of one or more of the electrodes is selectively selected to yield a second redox product. Change;
(C) coupling the protected monomer with the deprotected material produced in step (b); and (d) one or more selected in step (b) to synthesize a set of oligomers. The step of repeating steps (b) and (c) while changing the electrode of the method, wherein the electrolyte is selected so that the active redox product can be extinguished by the second redox product. A method of synthesizing a set of oligomers wherein the substrate does not form an electrode and is separated from the row of electrodes.
水素、ハロ、ヒドロキシル、チオ、ニトロ、アミノ、任意に置換されたC1〜C15ヒドロカルビル(ここで3個までのC原子は任意にN、Oおよび/またはS原子で置換させることができる)から独立して選ばれるか;または
R3およびR4ならびに/またはR5およびR6は一体となって任意に置換されたC1〜C15シクロヒドロカルビレン(ここで3個までのC原子は任意にN、Oおよび/またはS原子で置換させることができる)を形成する}の溶液である、請求項20〜28のいずれか1項に記載の方法。Electrolyte
Hydrogen, halo, hydroxyl, thio, nitro, amino, optionally substituted C 1 -C 15 hydrocarbyl (where up to 3 C atoms can optionally be replaced by N, O and / or S atoms) Or R 3 and R 4 and / or R 5 and R 6 together are optionally substituted C 1 -C 15 cyclohydrocarbylene (wherein up to 3 C atoms 29. The method according to any one of claims 20 to 28, wherein can be optionally substituted with N, O and / or S atoms.
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| GBGB0121155.6A GB0121155D0 (en) | 2001-08-31 | 2001-08-31 | Treatment of substrates |
| PCT/GB2002/003992 WO2003020415A2 (en) | 2001-08-31 | 2002-09-02 | Treatment of substrates using an electrochemical method |
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| JP2005502032A JP2005502032A (en) | 2005-01-20 |
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| EP (1) | EP1420879A2 (en) |
| JP (1) | JP4261350B2 (en) |
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| AU (1) | AU2002321587A1 (en) |
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| GB0508983D0 (en) | 2005-05-03 | 2005-06-08 | Oxford Gene Tech Ip Ltd | Cell analyser |
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| US8855955B2 (en) | 2005-09-29 | 2014-10-07 | Custom Array, Inc. | Process and apparatus for measuring binding events on a microarray of electrodes |
| US20080108149A1 (en) * | 2006-10-23 | 2008-05-08 | Narayan Sundararajan | Solid-phase mediated synthesis of molecular microarrays |
| WO2011090793A2 (en) | 2010-01-20 | 2011-07-28 | Customarray, Inc. | Multiplex microarray of serially deposited biomolecules on a microarray |
| WO2014153188A2 (en) | 2013-03-14 | 2014-09-25 | Life Technologies Corporation | High efficiency, small volume nucleic acid synthesis |
| US12595500B2 (en) | 2011-09-26 | 2026-04-07 | Life Technologies Corporation | High efficiency, small volume nucleic acid synthesis |
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| US10407676B2 (en) | 2014-12-09 | 2019-09-10 | Life Technologies Corporation | High efficiency, small volume nucleic acid synthesis |
| EP3826762A1 (en) * | 2018-07-23 | 2021-06-02 | DNA Script | Massively parallel enzymatic synthesis of nucleic acid strands |
| US11584956B2 (en) | 2018-12-21 | 2023-02-21 | Microsoft Technology Licensing, Llc | Selectively controllable cleavable linkers |
| US12415171B2 (en) | 2018-12-21 | 2025-09-16 | Microsoft Technology Licensing, Llc | Regulation of DNA synthesis by nucleotides linked to protecting groups |
| GB201903055D0 (en) * | 2019-03-07 | 2019-04-24 | Nuclera Nucleics Ltd | Method of oligonucleaotide synthesis |
| US11614424B2 (en) | 2019-03-29 | 2023-03-28 | Palogen, Inc. | Nanopore device and methods of biosynthesis using same |
| US12226746B2 (en) * | 2019-06-07 | 2025-02-18 | Microsoft Technology Licensing, Llc | Reversing bias in polymer synthesis electrode array |
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| US11795450B2 (en) | 2019-09-06 | 2023-10-24 | Microsoft Technology Licensing, Llc | Array-based enzymatic oligonucleotide synthesis |
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| US11896945B2 (en) | 2019-10-09 | 2024-02-13 | Microsoft Technology Licensing, Llc | High surface area coatings for solid-phase synthesis |
| CN117043171A (en) * | 2020-08-28 | 2023-11-10 | 特韦斯特生物科学公司 | Apparatus and method for synthesis |
| EP4298246A4 (en) | 2021-02-26 | 2024-12-11 | Avery Digital Data, Inc. | Semiconductor chip devices and methods for polynucleotide synthesis |
| US20220323924A1 (en) * | 2021-03-24 | 2022-10-13 | Twist Bioscience Corporation | Electrochemical polynucleotide synthesis |
| JP2022178596A (en) * | 2021-05-20 | 2022-12-02 | 国立大学法人大阪大学 | Carbon dioxide selective enrichment device |
| EP4389939A3 (en) * | 2022-12-23 | 2024-08-28 | Imec VZW | Electrochemical synthesis of molecules on a surface |
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| DE19610115C2 (en) * | 1996-03-14 | 2000-11-23 | Fraunhofer Ges Forschung | Detection of molecules and molecular complexes |
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| GB0121155D0 (en) | 2001-10-24 |
| WO2003020415A3 (en) | 2003-10-30 |
| CN1549744A (en) | 2004-11-24 |
| CN100441283C (en) | 2008-12-10 |
| EP1420879A2 (en) | 2004-05-26 |
| US20040238369A1 (en) | 2004-12-02 |
| WO2003020415A2 (en) | 2003-03-13 |
| AU2002321587A1 (en) | 2003-03-18 |
| EA200400379A1 (en) | 2004-08-26 |
| EA005836B1 (en) | 2005-06-30 |
| JP2005502032A (en) | 2005-01-20 |
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