JP4263552B2 - Optical material, optical amplifier and manufacturing method thereof - Google Patents

Description

【００１５】
但し、Ｒ1 〜Ｒ4 は、Ｐｈ（フェニル基），Ｍｅ（メチル基），Ｅｔ（エチル基），ＯＭｅ（Ｏ−メチル基），ＯＥｔ（Ｏ−エチル基）又はＯ−Ｓｉ−Ｏ（クロスリンク）である。また、Ｒ1 〜Ｒ4 は相互に異なるものでもよいし、同じでもよい。Ｒ₁ 〜Ｒ₄ がＯ−Ｓｉ−Ｏの結合を持ち、上記のポリシラン基本構造がクロスリンクしていてもよい。
【００１６】
また、希土類元素Ｍのアルコキシド（但し、Ｍは、Ｅｒ、Ｅｕ、Ｐｒ及びＹのうちのいずれか１種の元素）を、下記（４）式に示すアルコキシドから生成される有機無機ハイブリッド材料と混合して作製される光学材料でも、同様の効果を得ることができることが判明した。本発明は、このような実験結果に基づいてなされたものである。
【００１７】
Ｒ−Ｓｉ（ＯＲ₁ ）₃ …（４）
但し、Ｒは、（ＣＸ₂ ）_n −ＣＨ＝ＣＨＣ（＝Ｏ）ＯＲ₂
ｎは、１〜３の整数
Ｒ₁ は、ＣＨ₃ 、Ｃ₂ Ｈ₅ 又はＣ₃ Ｈ₇
Ｒ₂ は、Ｈ、ＣＨ₃ 、ＣＦ₃ 、Ｃ₂ Ｈ₅ 又はＣ₂ Ｆ₅
Ｘは、Ｈ又はＦ。
【００１８】
本発明においては、Ｅｒ等の希土類元素の錯体と有機部分との間に水素結合などの結合が働くため、希土類元素をポリシラン又は有機無機ハイブリッド材料に高濃度に混合することが可能になり、希土類元素の凝集が回避される。これにより、小型で増幅効果が大きい光増幅器を製造することができる。
【００１９】
【発明の実施の形態】
本発明の光学材料は、Ｅｒ等の希土類元素のアルコキシドを所定のポリシラン又は有機無機ハイブリッド材料に混合して作製されている。また、本発明の光増幅器は、第１のクラッド層と、上述の光学材料を用いて形成されたコア層と、第２のクラッド層とが基板上にこの順に積層されて形成されてなる導波路を有している。この光増幅器では、基板上に第１及び第２のクラッド層、並びにコア層が形成されているので、基板の材質が限定されず、種々の基板を使用することができる。例えば、ガラス基板、プリント配線基板又はシリコン基板などを使用することができる。
【００２０】
本発明の光増幅器は、後述の実施例１，２で示すように、予め調整した液を基板上に塗布して第１及び第２のクラッド層、並びにコア層を形成すればよいので、製造が簡単である。また、コア層に増幅作用を有する希土類元素を均一且つ高濃度に含有しているので、小型で増幅効果が大きい。
【００２１】
以下、本発明に係る光学材料を用いて実際に光増幅器を製造し、その増幅率を調べた結果について説明する。
【００２２】
【実施例１】
まず、コア材料を用意した。すなわち、ジフェニルジクロロシラン及びテトラクロロシランをＴＨＦ（テトラヒドロフラン）中に混合した。そして、この混合液中に更にエルビウム−（２，４−ペンタジオネート）を混合した後、ナトリウム（Ｎａ）を用いてカップリングさせることによって、分子内にエルビウム（Ｅｒ）を有するポリシランを合成した。また、クラッド材料として、屈折率が１．５１のエポキシ樹脂を用意した。
【００２３】
次に、図１（ａ）に示すように、シリコン基板１０の上に、クラッド材料であるエポキシ樹脂をスピンコートして、屈折率が１．５１、厚さが約８μｍの下部クラッド層１１を形成した。
【００２４】
次に、上述したコア材料を下部クラッド層１１上にスピンコートした後、２００℃の温度で１時間加熱することにより、屈折率が１．５３、厚さが約８μｍのＥｒ混合ポリシランからなるコア層１２を形成した。
【００２５】
更に、コア層１２上にエポキシ樹脂をスピンコートして、屈折率が１．５１、厚さが約７．５〜８μｍの上部クラッド層１３を形成した。
【００２６】
次に、上部クラッド層１３の上にアルミニウム膜をスパッタ法により形成した後、フォトリソグラフィ法によりアルミニウム膜をパターニングして、図１（ｂ）に示すように、メタルマスク１４を形成した。
【００２７】
次に、メタルマスク１４を保護層として上部クラッド層１３及びコア層１２をエッチングし、更に下部クラッド層１１を若干エッチングして、図１（ｃ）に示すように、幅が約８μｍ、長さが約１０ｃｍの導波路１８を形成した。その後、酢酸−硝酸−燐酸−水の混合液でメタルマスク１４をエッチング除去した。
【００２８】
次いで、図２（ａ）に上面図、図２（ｂ）に側面図を示すように，導波路１８の両端に光ファイバー１９を光結合し、ケース３０内に封入した。
【００２９】
このようにして製造した光増幅器に対し、光カプラを用いて波長が９８０ｎｍの励起光と波長が１．５５μｍの信号光とを混合し、光増幅器の導波路１８に導入した。その結果、入射光のパワーが１ｍＷであるのに対し、パワーが１．５ｍＷの出射光が観測された。すなわち、１０ｃｍの導波路で約１．７ｄＢの増幅効果が得られた。
【００３０】
【実施例２】
まず、コア材料を用意した。すなわち、３−メタクリロキシプロピルトリメトキシシラン、エルビウム−（２, ４−ペンタジオネート）及びポリ（シクロヘキシル）シランを酢酸エチルに溶解した後、水を加えて加水分解を行い、ゾルゲル液を作成した。また、クラッド材料として、３−メタクリロキシプロピルトリメトキシシランを加水分解したゾルゲル液を用意した。
【００３１】
次に、図３（ａ）に示すように、シリコン基板１０上にクラッド材料であるゾルゲル液をスピンコートし、その後２００℃の温度で１時間加熱することで、屈折率が１．４９、厚さが約８μｍの有機無機ハイブリッド材料からなる下部クラッド層２１を形成した。
【００３２】
次に、下部クラッド層２１の上に、上述したコア材料のゾルゲル液をスピンコートし、その後２００℃の温度で加熱することによって、屈折率が１．５１、厚さが約８μｍのコア層２２を形成した。
【００３３】
次に、コア層２２の上に、クラッド材料であるゾルゲル液をスピンコートして、屈折率が１．４９、厚さが約８μｍの有機無機ハイブリッド材料からなる上部クラッド層２３を作成した。
【００３４】
次に、上部クラッド層２３の上にアルミニウム膜をスパッタ法により形成した後、フォトリソグラフィ法によりアルミニウム膜をパターニングして、図３（ｂ）に示すように、メタルマスク２４を形成した。
【００３５】
次に、メタルマスク２４を保護層として上部クラッド層２３、コア層２２をエッチングし、更に下部クラッド層２１を若干エッチングして、図３（ｃ）に示すように、幅が約８μｍ、長さが約１０ｃｍの導波路２８を形成した。その後、酢酸−硝酸−燐酸−水の混合液でメタルマスク２４をエッチング除去した。
【００３６】
次に、導波路２８に、波長が２５４ｎｍのＵＶ光を照射した後、２００℃の温度でベーキング処理を施した。このＵＶ照射及びベーキング処理により上部クラッド層２３、コア層２２及び下部クラッド層２１の膜質が安定する。この工程は必須ではないが、光増幅効果をより確実に得るために、実施することが好ましい。
【００３７】
次いで、実施例１と同様に、導波路２８の両端に光ファイバーを光結合して、ケース内に封入した。
【００３８】
このようにして製造した光増幅器に対し、光カプラを用いて波長が９８０ｎｍの励起光と波長が１．５５μｍの信号光を混合し、光増幅器の導波路２８に導入した。その結果、入射光のパワーが１ｍＷであるのに対し、パワーが２．５ｍＷの出射光が観測された。すなわち、１０ｃｍの導波路で約４ｄＢの増幅効果が得られた。
【００３９】
なお、本発明は上述した実施例１，２に限定されるものではなく、上記以外の薬品を用いて実施することも可能である。
【００４０】
（付記１）希土類元素Ｍのアルコキシド（但し、Ｍは、Ｅｒ、Ｅｕ、Ｐｒ及びＹのうちのいずれか１種の元素）を、下記（５）式に示すポリシランに混合して作製されたことを特徴とする光学材料。
【００４１】
【化３】

【００４２】
但し、Ｒ1 〜Ｒ4 は、Ｐｈ（フェニル基），Ｍｅ（メチル基），Ｅｔ（エチル基），ＯＭｅ（Ｏ−メチル基），ＯＥｔ（Ｏ−エチル基）又はＯ−Ｓｉ−Ｏ（クロスリンク）
（付記２） 希土類元素Ｍのアルコキシド（但し、Ｍは、Ｅｒ、Ｅｕ、Ｐｒ及びＹのうちのいずれか１種の元素）を、下記（６）式に示すアルコキシドから生成された有機無機ハイブリッド材料に混合して作製されたことを特徴とする光学材料。
Ｒ−Ｓｉ（ＯＲ₁ ）₃ …（６）
但し、Ｒは、（ＣＸ₂ ）_n −ＣＨ＝ＣＨＣ（＝Ｏ）ＯＲ₂
ｎは、１〜３の整数
Ｒ₁ は、ＣＨ₃ 、Ｃ₂ Ｈ₅ 又はＣ₃ Ｈ₇
Ｒ₂ は、Ｈ、ＣＨ₃ 、ＣＦ₃ 、Ｃ₂ Ｈ₅ 又はＣ₂ Ｆ₅
Ｘは、Ｈ又はＦ。
【００４３】
（付記３）コア層と、該コア層の周囲を覆うクラッド層とにより構成される光導波路を有する光増幅器において、前記コア層が付記１又は２に記載の光学材料により形成されていることを特徴とする光増幅器。
【００４４】
（付記４）基板上に第１のクラッド層を形成する工程と、前記第１のクラッド層上に、付記１又は２に記載の光学材料を塗布してコア層を形成する工程と、前記コア層の上に第２のクラッド層を形成する工程と、前記第２のクラッド層及び前記コア層をパターニングして導波路を形成する工程とを有することを特徴とする光増幅器の製造方法。
【００４５】
（付記５）前記第１及び第２のクラッド層、並びに前記コア層に対し、ＵＶ照射を行う工程を有することを特徴とする付記４に記載の光増幅器の製造方法。
【００４６】
（付記６）前記第１及び第２のクラッド層、並びに前記コア層に対しベーキング処理を施す工程を有することを特徴とする付記５に記載の光増幅器の製造方法。
【００４７】
（付記７）前記第１及び第２のクラッド層をエポキシ樹脂により形成することを特徴とする付記４に光増幅器の製造方法。
【００４８】
（付記８）前記第１及び第２のクラッド層を有機無機ハイブリッド材料により形成することを特徴とする付記４に記載の光増幅器の製造方法
【００４９】
【発明の効果】
以上説明したように、本発明の光学材料は、Ｅｒ等の希土類元素のアルコキシドを所定のポリシラン又は有機無機ハイブリッド材料に混合して作製されているので、希土類元素をポリシラン又は有機無機ハイブリッド材料に高濃度に混合することが可能である。これにより、小型であり、且つ１．５５μｍの波長帯の光信号に対する増幅効果が大きい光増幅器を容易に製造することができて、製造コストを低減できる。
【図面の簡単な説明】
【図１】図１（ａ）〜（ｃ）は実施例１に係る光増幅器の製造方法を工程順に示す断面図である。
【図２】図２（ａ）はケース内に封入した実施例１に係る光増幅器を示す上面図、図２（ｂ）は同じくその側面図である。
【図３】図３（ａ）〜（ｃ）は実施例２に係る光増幅器の製造方法を工程順に示す断面図である。
【符号の説明】
１０…シリコン基板、
１１，２１…下部クラッド層、
１２，２２…コア層、
１３，２３…上部クラッド層、
１４，２４…メタルマスク、
１８，２８…導波路、
１９…光ファイバー、
３０…ケース。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an optical material suitable as a material for a core layer of an optical amplifier, an optical amplifier using the optical material, and a manufacturing method thereof.
[0002]
[Prior art]
In recent years, quartz optical fibers have been used for high-speed and large-capacity signal transmission. Although the optical fiber has a small loss when transmitting a signal, the optical signal is attenuated due to a propagation loss, a connection loss, and the like in long-distance transmission. Therefore, an optical amplifier is necessary to compensate for the attenuation of the optical signal.
[0003]
Conventionally, an Er-doped fiber amplifier in which erbium (Er) is doped into a quartz fiber has been used to amplify an optical signal having a wavelength band of 1.55 μm. However, since Er cannot be doped at a high concentration in quartz, a fiber length of several meters to several tens of meters is required to secure a sufficient gain, and there is a disadvantage that an optical amplifier becomes large.
[0004]
Bismuth glass is known as a glass that can be doped with Er at a high concentration. However, even if an optical amplifier is manufactured by doping Er into bismuth-based glass, the optical loss of the bismuth-based glass as a base material is large, so that the specifications required as an optical amplifier cannot be satisfied.
[0005]
Japanese Unexamined Patent Publication No. 2000-208551 (Patent Document 1) proposes an optical amplifier using an optical material in which eurobium (Eu) is introduced into a polymer. However, this optical amplifier is used to amplify an optical signal having a wavelength band of 500 nm to 900 nm, and cannot be used to amplify an optical signal having a wavelength band of 1.55 μm.
[0006]
Although it is conceivable to introduce Er into the polymer, generally, when a rare earth element is mixed in the polymer at a high concentration, a problem of aggregation occurs, and the light loss also increases. In addition, Er emits light in a wavelength band of 1.55 μm only in the trivalent ion state and exhibits amplification performance, but there is a problem that it is difficult to maintain the ion state in the polymer.
[0007]
A Teem Photonics Technical article (Non-Patent Document 1) describes a waveguide type optical amplifier using glass in which Er is diffused. However, this waveguide optical amplifier is generally difficult to use because the material is limited to glass.
[0008]
[Patent Document 1]
JP 2000-208551 A [Non-Patent Document 1]
Teem Photonics (USA) Technical article (Andrew Benn 2002/3)
[0009]
[Problems to be solved by the invention]
As described above, in a fiber amplifier composed of a quartz fiber doped with Er, the fiber length is several meters to several tens of meters because Er cannot be doped at a high concentration in the fiber, and the fiber amplifier cannot be miniaturized. Even if an optical amplifier is produced by introducing Er at a high concentration in the polymer, it is difficult to avoid the aggregation of Er and it is difficult to maintain a trivalent ion state in the polymer.
[0010]
Furthermore, a waveguide type optical amplifier using glass in which Er is diffused has a problem that it is generally difficult to use because the material is limited to glass.
[0011]
From the above, the object of the present invention is suitable as a material for a core layer of an optical amplifier that amplifies an optical signal in a wavelength band of 1.55 μm without causing aggregation even when a rare earth element such as Er is mixed at a high concentration. It is to provide an optical material.
[0012]
Another object of the present invention is to provide an optical amplifier that can be manufactured through a relatively simple process and that can provide a small amplification effect and a manufacturing method thereof.
[0013]
[Means for Solving the Problems]
In order to provide optical materials that can mix rare earth elements such as Er at a high concentration, have small optical loss, and exhibit amplification performance with respect to an optical signal in a wavelength band of 1.55 μm, An experimental study was conducted. As a result, an alkoxide of rare earth element M (where M is any one element of Er (erbium), Eu (eurobium), Pr (praseodymium) and Y (yttrium)) is represented by the following formula (3): It was found that the optical material produced by mixing with the polysilane shown in the above shows good performance as a material for the core layer of the optical amplifier.
[0014]
[Chemical formula 2]

[0015]
However, R1 to R4 are Ph (phenyl group), Me (methyl group), Et (ethyl group), OMe (O-methyl group), OEt (O-ethyl group) or O-Si-O (crosslink). It is. R1 to R4 may be different from each other or the same. R _{1 to} R ₄ may have an O—Si—O bond, and the above polysilane basic structure may be cross-linked.
[0016]
Also, an alkoxide of rare earth element M (where M is any one element of Er, Eu, Pr and Y) is mixed with an organic-inorganic hybrid material generated from an alkoxide represented by the following formula (4) Thus, it has been found that the same effect can be obtained with the optical material produced in this way. The present invention has been made based on such experimental results.
[0017]
R-Si (OR ₁ ) ₃ (4)
Here, R _{is, (CX 2) n -CH =} CHC (= O) OR 2
n is an integer of _{1 to} 3, R ₁ is CH ₃ , C ₂ H ₅ or C ₃ H _7.
R ₂ is H, CH ₃ , CF ₃ , C ₂ H ₅ or C ₂ F ₅
X is H or F.
[0018]
In the present invention, since a bond such as a hydrogen bond works between a rare earth element complex such as Er and an organic portion, it becomes possible to mix the rare earth element with polysilane or an organic-inorganic hybrid material at a high concentration. Aggregation of elements is avoided. As a result, an optical amplifier that is small and has a large amplification effect can be manufactured.
[0019]
DETAILED DESCRIPTION OF THE INVENTION
The optical material of the present invention is produced by mixing a rare earth element alkoxide such as Er with a predetermined polysilane or organic-inorganic hybrid material. Further, the optical amplifier of the present invention includes a first clad layer, a core layer formed using the above-described optical material, and a second clad layer laminated in this order on a substrate. It has a waveguide. In this optical amplifier, since the first and second clad layers and the core layer are formed on the substrate, the material of the substrate is not limited, and various substrates can be used. For example, a glass substrate, a printed wiring board, a silicon substrate, or the like can be used.
[0020]
The optical amplifier of the present invention can be manufactured because the first and second clad layers and the core layer may be formed by applying a liquid prepared in advance on the substrate as shown in Examples 1 and 2 to be described later. Is simple. Further, since the core layer contains a rare earth element having an amplification effect uniformly and at a high concentration, the core layer is small and has a large amplification effect.
[0021]
Hereinafter, the result of actually manufacturing an optical amplifier using the optical material according to the present invention and examining the amplification factor will be described.
[0022]
[Example 1]
First, a core material was prepared. That is, diphenyldichlorosilane and tetrachlorosilane were mixed in THF (tetrahydrofuran). Then, after further mixing erbium- (2,4-pentadionate) in the mixed solution, coupling with sodium (Na) was performed to synthesize polysilane having erbium (Er) in the molecule. . Further, an epoxy resin having a refractive index of 1.51 was prepared as a cladding material.
[0023]
Next, as shown in FIG. 1A, the lower clad layer 11 having a refractive index of 1.51 and a thickness of about 8 μm is spin-coated on the silicon substrate 10 with an epoxy resin as a clad material. Formed.
[0024]
Next, after spin-coating the above-mentioned core material on the lower clad layer 11, the core is made of Er mixed polysilane having a refractive index of 1.53 and a thickness of about 8 μm by heating at 200 ° C. for 1 hour. Layer 12 was formed.
[0025]
Further, an epoxy resin was spin coated on the core layer 12 to form an upper clad layer 13 having a refractive index of 1.51 and a thickness of about 7.5 to 8 μm.
[0026]
Next, after an aluminum film was formed on the upper clad layer 13 by sputtering, the aluminum film was patterned by photolithography to form a metal mask 14 as shown in FIG.
[0027]
Next, the upper clad layer 13 and the core layer 12 are etched using the metal mask 14 as a protective layer, and the lower clad layer 11 is slightly etched, so that the width is about 8 μm and the length as shown in FIG. Formed a waveguide 18 of about 10 cm. Thereafter, the metal mask 14 was removed by etching with a mixed solution of acetic acid-nitric acid-phosphoric acid-water.
[0028]
Next, as shown in a top view in FIG. 2A and a side view in FIG. 2B, optical fibers 19 were optically coupled to both ends of the waveguide 18 and sealed in a case 30.
[0029]
The optical amplifier thus manufactured was mixed with pump light having a wavelength of 980 nm and signal light having a wavelength of 1.55 μm using an optical coupler, and introduced into the waveguide 18 of the optical amplifier. As a result, the incident light had a power of 1 mW, whereas an emitted light having a power of 1.5 mW was observed. That is, an amplification effect of about 1.7 dB was obtained with a 10 cm waveguide.
[0030]
[Example 2]
First, a core material was prepared. That is, 3-methacryloxypropyltrimethoxysilane, erbium- (2,4-pentadionate) and poly (cyclohexyl) silane were dissolved in ethyl acetate and then hydrolyzed with water to prepare a sol-gel solution. . A sol-gel solution obtained by hydrolyzing 3-methacryloxypropyltrimethoxysilane was prepared as a cladding material.
[0031]
Next, as shown in FIG. 3A, a sol-gel solution as a clad material is spin-coated on the silicon substrate 10 and then heated at a temperature of 200 ° C. for 1 hour, whereby the refractive index is 1.49, A lower cladding layer 21 made of an organic-inorganic hybrid material having a thickness of about 8 μm was formed.
[0032]
Next, the above-described core material sol-gel solution is spin-coated on the lower clad layer 21, and then heated at a temperature of 200 ° C., whereby the core layer 22 having a refractive index of 1.51 and a thickness of about 8 μm. Formed.
[0033]
Next, a sol-gel solution as a clad material was spin-coated on the core layer 22 to produce an upper clad layer 23 made of an organic-inorganic hybrid material having a refractive index of 1.49 and a thickness of about 8 μm.
[0034]
Next, after an aluminum film was formed on the upper clad layer 23 by sputtering, the aluminum film was patterned by photolithography to form a metal mask 24 as shown in FIG.
[0035]
Next, the upper clad layer 23 and the core layer 22 are etched using the metal mask 24 as a protective layer, and the lower clad layer 21 is further etched slightly to obtain a width of about 8 μm and a length as shown in FIG. Formed a waveguide 28 of approximately 10 cm. Thereafter, the metal mask 24 was removed by etching with a mixed solution of acetic acid-nitric acid-phosphoric acid-water.
[0036]
Next, the waveguide 28 was irradiated with UV light having a wavelength of 254 nm, and then baked at a temperature of 200 ° C. The film quality of the upper clad layer 23, the core layer 22 and the lower clad layer 21 is stabilized by this UV irradiation and baking treatment. This step is not essential, but is preferably performed in order to obtain the light amplification effect more reliably.
[0037]
Next, as in Example 1, optical fibers were optically coupled to both ends of the waveguide 28 and sealed in a case.
[0038]
The optical amplifier manufactured as described above was mixed with pump light having a wavelength of 980 nm and signal light having a wavelength of 1.55 μm using an optical coupler and introduced into the waveguide 28 of the optical amplifier. As a result, the incident light had a power of 1 mW, whereas an output light having a power of 2.5 mW was observed. That is, an amplification effect of about 4 dB was obtained with a 10 cm waveguide.
[0039]
In addition, this invention is not limited to Example 1, 2 mentioned above, It is also possible to implement using chemicals other than the above.
[0040]
(Appendix 1) An alkoxide of rare earth element M (where M is any one element of Er, Eu, Pr and Y) mixed with polysilane represented by the following formula (5) An optical material characterized by
[0041]
[Chemical 3]

[0042]
However, R1 to R4 are Ph (phenyl group), Me (methyl group), Et (ethyl group), OMe (O-methyl group), OEt (O-ethyl group) or O-Si-O (crosslink).
(Supplementary Note 2) Organic-inorganic hybrid material produced from alkoxide of rare earth element M (where M is any one element of Er, Eu, Pr and Y) represented by the following formula (6) An optical material produced by mixing with the above.
R-Si (OR ₁ ) ₃ (6)
Here, R _{is, (CX 2) n -CH =} CHC (= O) OR 2
n is an integer of _{1 to} 3, R ₁ is CH ₃ , C ₂ H ₅ or C ₃ H _7.
R ₂ is H, CH ₃ , CF ₃ , C ₂ H ₅ or C ₂ F ₅
X is H or F.
[0043]
(Additional remark 3) In the optical amplifier which has an optical waveguide comprised by the core layer and the clad layer which covers the circumference | surroundings of this core layer, the said core layer is formed with the optical material of Additional remark 1 or 2 A characteristic optical amplifier.
[0044]
(Additional remark 4) The process of forming a 1st clad layer on a board | substrate, The process of apply | coating the optical material of Additional remark 1 or 2 on the said 1st clad layer, and forming a core layer, The said core A method of manufacturing an optical amplifier, comprising: forming a second clad layer on the layer; and patterning the second clad layer and the core layer to form a waveguide.
[0045]
(Additional remark 5) The manufacturing method of the optical amplifier of Additional remark 4 characterized by including the process of performing UV irradiation with respect to the said 1st and 2nd clad layer and the said core layer.
[0046]
(Additional remark 6) The manufacturing method of the optical amplifier of Additional remark 5 which has the process of performing a baking process with respect to the said 1st and 2nd clad layer and the said core layer.
[0047]
(Supplementary note 7) The method for manufacturing an optical amplifier according to supplementary note 4, wherein the first and second cladding layers are formed of an epoxy resin.
[0048]
(Supplementary note 8) The method for manufacturing an optical amplifier according to supplementary note 4, wherein the first and second cladding layers are formed of an organic-inorganic hybrid material.
【The invention's effect】
As described above, the optical material of the present invention is produced by mixing a rare earth element alkoxide such as Er with a predetermined polysilane or organic-inorganic hybrid material. It is possible to mix to a concentration. As a result, an optical amplifier that is small in size and has a large amplification effect on an optical signal in the 1.55 μm wavelength band can be easily manufactured, and the manufacturing cost can be reduced.
[Brief description of the drawings]
FIGS. 1A to 1C are cross-sectional views showing a method of manufacturing an optical amplifier according to a first embodiment in the order of steps.
2A is a top view showing the optical amplifier according to the first embodiment sealed in a case, and FIG. 2B is a side view of the same. FIG.
FIGS. 3A to 3C are cross-sectional views illustrating a method of manufacturing an optical amplifier according to a second embodiment in the order of steps.
[Explanation of symbols]
10 ... silicon substrate,
11, 21, ... lower cladding layer,
12, 22 ... Core layer,
13, 23 ... upper clad layer,
14, 24 ... Metal mask,
18, 28 ... waveguide,
19 ... Optical fiber,
30 ... Case.

Claims (2)

In an optical amplifier having an optical waveguide composed of a core layer and a cladding layer covering the periphery of the core layer,
The core layer,
Rare earth element M alkoxide (where M is any one element of Er, Eu, Pr and Y) produced from polysilane represented by the following formula (1) or alkoxide represented by the following formula (2) An optical amplifier formed of an optical material mixed with an organic-inorganic hybrid material .

However, R < ₁ > -R < ₄ > is Ph (phenyl group), Me (methyl group), Et (ethyl group), OMe (O-methyl group), OEt (O-ethyl group) or O-Si-O (cross). Link).
R-Si (OR ₁ ) ₃ (2)
Here, R _{is, (CX 2) n -CH =} CHC (= O) OR 2,
n is an integer of 1 to 3,
R ₁ is CH ₃ , C ₂ H ₅ or C ₃ H ₇ ,
R ₂ is H, CH ₃ , CF ₃ , C ₂ H ₅ or C ₂ F ₅ ,
X is H or F. Forming a first cladding layer on the substrate;
On the first cladding layer, an alkoxide of rare earth element M (where M is any one element of Er, Eu, Pr and Y) is polysilane represented by the following formula (1) or the following (2 ) A step of forming a core layer by applying an optical material prepared by mixing with an organic-inorganic hybrid material generated from an alkoxide represented by the formula :
Forming a second cladding layer on the core layer;
And a step of patterning the second cladding layer and the core layer to form a waveguide.

However, R < ₁ > -R < ₄ > is Ph (phenyl group), Me (methyl group), Et (ethyl group), OMe (O-methyl group), OEt (O-ethyl group) or O-Si-O (cross). Link).
R-Si (OR ₁ ) ₃ (2)
Here, R _{is, (CX 2) n -CH =} CHC (= O) OR 2
n is an integer of 1 to 3,
R ₁ is CH ₃ , C ₂ H ₅ or C ₃ H ₇ .
R ₂ is H, CH ₃ , CF ₃ , C ₂ H ₅ or C ₂ F ₅ ,
X is H or F.

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