JP4280973B2 - Semiconductor light emitting device and manufacturing method thereof - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor light-emitting device, and more particularly to a semiconductor light-emitting device that includes a reflector that reflects light emitted from a semiconductor light-emitting element fixed on a support plate and can easily perform wire bonding of the semiconductor light-emitting element.
[0002]
[Prior art]
A semiconductor light-emitting element and a reflector (light reflecting plate) surrounding the semiconductor light-emitting element are fixed to the main surface of the insulating substrate on which the wiring conductor is formed, and the semiconductor element and the reflector are sealed with a resin made of a light-transmitting resin. A semiconductor light-emitting device embedded in a stationary body is known, for example, from Patent Document 1 below.
[0003]
As shown in FIG. 15, the known semiconductor light emitting device (light emitting diode) has an island wiring conductor (die pad) (120) and a terminal wiring conductor (bonding pad) (130) individually on one main surface (101). The formed insulating substrate (100), the semiconductor light emitting device (light emitting diode chip) (140) fixed on the island wiring conductor (120), and the electrodes and terminals formed on the upper surface of the semiconductor light emitting device (140) A fine lead wire (150) connecting the wiring conductor (130), a part of the island wiring conductor (120) and the terminal wiring conductor (130) on one main surface (101) of the substrate (100), a semiconductor light emitting device ( 140) and a light-transmitting resin sealing body (160) covering the fine lead wire (150).
[0004]
The island wiring conductor (120) and the terminal wiring conductor (130) formed on one main surface (101) of the substrate (100) extend downward along the end surfaces (103, 104) of the substrate (100), and the island wiring conductor (120) and the distal end side of the terminal wiring conductor (130) extend to the other main surface (102) of the substrate (100) to form a connection electrode. The light emitted from the upper surface of the semiconductor light emitting device (140) is emitted to the outside through the resin sealing body (160). In the illustrated semiconductor light emitting device, the bottom surface of the substrate (100) can be surface-mounted on a circuit board or the like.
[0005]
In the semiconductor light emitting device, a reflector (110) surrounding the semiconductor light emitting element (140) is formed on one main surface (101) of the insulating substrate (100). The substrate (100) having a rectangular planar shape is a plate material in which a glass cloth is impregnated with a resin and both main surfaces are flat. The island wiring conductor (120) and the terminal wiring conductor (130) are formed by sequentially plating nickel and gold on a base material copper by a printing technique. The island wiring conductor (120) includes an island (121) formed on one main surface (upper surface) (101) of the substrate (100) and one end of one main surface (101) of the substrate (100). Formed on one main surface (101) of the substrate (100) and the island electrode part (122) formed through the side surface (103) to one end of the other main surface (lower surface) (102) of the substrate (100) And a narrow island wiring portion (123) connecting the island (121) and the island electrode portion (122).
[0006]
The terminal wiring conductor (130) includes a terminal (131) formed on one main surface (101) of the substrate (100), and the other side surface from the other end of the one main surface (101) of the substrate (100) ( 104) and the other main surface (lower surface) (102) of the substrate (100) to the other end of the substrate (100), and one main surface (101) of the substrate (100). In addition, a terminal wiring part (132) connecting the terminal (131) and the terminal electrode part (133) is formed. Since the terminal (131) is displaced from the central axis (108) and the ring portion (111) is formed in an annular shape, the length of the substrate (100) in the longitudinal direction is relatively small, and the light emitting diode device is It can be manufactured in a small size.
[0007]
The semiconductor light emitting device 140 is a gallium compound semiconductor device such as gallium arsenide (GaAs), gallium phosphide (GaP), gallium aluminum arsenide (GaAlAs), aluminum gallium indium phosphide (AlGaInP). A bottom electrode (not shown) formed on the bottom surface of the semiconductor light emitting device (140) is fixed to the approximate center of the island (121) with a conductive adhesive. Further, an upper electrode (not shown) formed on the upper surface of the semiconductor light emitting device (140) is connected to the terminal (131) by a fine lead wire (150) formed by a wire bonding method. The fine lead wire (150) is formed over the reflector (110).
[0008]
The reflector (110) has a ring part (111) and flange parts (112) provided at both ends of the outer peripheral surface of the ring part (111), and is composed of a liquid crystal polymer blended with white powder, ABS resin, or the like. Is done. A conical surface, a spherical surface, a parabolic surface, a surface similar to these, or a combination thereof having an opening cross-sectional area that expands in a direction away from the support plate (1) provided on the inner peripheral surface of the ring portion (111). The lower edge portion of the inclined surface (113) of the surface consisting of is arranged inside the island (121). The semiconductor light emitting device (140) disposed inside the inclined surface (113) is surrounded by the ring portion (111). The height of the ring part (111) is larger than the height of the semiconductor light emitting element (140). The ring portion (111) has a diameter that overlaps with the outer peripheral side of the island (121) and part of the island wiring portion (123) and the terminal (131). The flange portion (112) of the reflector (110) extends in the short direction of the substrate (100) from both ends of the ring portion (111) to the side surfaces (105, 106).
[0009]
The resin sealing body (160) includes a pair of inclined surfaces (161, 162) that are inclined at a certain angle with respect to the pair of side surfaces (103, 104) of the substrate (100) and are disposed on the inner side of the electrode portions (124, 134), and the substrate ( Between the pair of upright surfaces (163,164) and the pair of upright surfaces (163,164) that are substantially perpendicular to the upright surfaces (163,164). And an upper surface (165). As shown in FIG. 15, the resin sealing body (160) includes an island (121), a terminal (131), an island wiring portion (123) and an inner portion of the terminal electrode portion (133), a reflector (110), a semiconductor light emitting device. The element (140) and the lead wire (150) are covered, but the pair of electrode portions (124, 134), the wiring conductor (123), and the outer portion of the terminal electrode portion (133) are exposed from the resin sealing body (160).
[0010]
[Patent Document 1]
JP-A-11-340517 (pages 4 to 6, FIG. 1)
[0011]
[Problems to be solved by the invention]
As shown in FIG. 15, conventionally, the semiconductor light emitting device (140) and the terminal (131) are connected by the lead wire (150) over the ring portion (111) of the reflector (110). In order to improve the directivity of the light reflected by 110) and the brightness in the optical axis direction of the semiconductor light emitting device (140) (front brightness), the reflector (110) has a smaller inner diameter and a reflector (100) from the substrate (100) When the height of (110) is increased, the lead wire (150) with one end connected to the semiconductor light emitting device (140) is routed high above the reflector (110) to the terminal (131) and the other end of the lead wire (150). Must be connected. For this reason, there is a risk that the lead wire (150) is deformed and droops or tilts, causing an electrical short circuit accident or a disconnection accident.
[0012]
Furthermore, in recent years, there have been attempts to use this type of semiconductor light-emitting device for light sources such as traffic lights and automobile tail lamps. It should be lit at an improved light output level. For this purpose, for example, a high light output semiconductor light emitting element that generates a large amount of light by flowing a relatively large current of 350 mA or more in the thickness direction of the semiconductor light emitting element has already been developed. Various problems occurred.
[0013]
That is, if a large current exceeding 350 mA is passed through the semiconductor light emitting device, the amount of heat generated during operation increases, and the surface temperature of the semiconductor light emitting device may exceed 150 ° C. Is strongly heated by heat radiation from the semiconductor light emitting device. As described above, in order to emit light emitted from the semiconductor light emitting element to the outside of the package, the resin sealing body that covers the semiconductor light emitting element is formed from a light-transmitting resin. This type of light-transmitting resin deteriorates due to heat because it contains less compound (filler) such as silica compared to a resin encapsulant used in power transistors and other packages. Cheap. For this reason, when heat from the semiconductor light emitting element is continuously applied to the resin sealing body made of the light-transmitting resin, the adhesion of the resin sealing body to the wiring conductor is reduced or the environmental resistance performance of the resin sealing body is reduced. Damaged. For this reason, a gap or the like is generated between the resin sealing body and the wiring conductor, and foreign matter enters the semiconductor light emitting element from the outside of the resin sealing body through the gap, thereby reducing the reliability of the device. Furthermore, when the adhesiveness between the wiring conductor and the resin sealing body is significantly reduced, the wiring conductor may fall out of the resin sealing body, and the electrical connection between the wiring conductor and the semiconductor light emitting element may be in an open state. .
[0014]
Accordingly, the present invention provides a semiconductor light emitting device that includes a reflector that reflects light emitted from a semiconductor light emitting element fixed on a support plate, and that can easily perform wire bonding of the semiconductor light emitting element, and a method for manufacturing the same. For the purpose. Another object of the present invention is to provide a semiconductor light emitting device that can prevent deformation of a lead wire connected to the semiconductor light emitting element, and a method for manufacturing the same. It is another object of the present invention to provide a semiconductor light emitting device that emits light with high brightness without causing adverse effects due to heat generation even when operated with a large current, and a method for manufacturing the same.
[0015]
[Means for Solving the Problems]
A semiconductor light emitting device according to the present invention includes a support plate (1), a resin reflector (3) fixed to the main surface (1a) of the support plate (1) and formed with an internal cavity (3a), and a reflector ( The semiconductor light emitting device (2) disposed in the internal cavity (3a) of 3) and fixed to the main surface (1a) of the support plate (1), and the semiconductor light emitting device disposed around the support plate (1) and A plurality of wiring conductors (4, 5) electrically connected to the electrode of (2), the outer peripheral portion (3g) of the reflector (3), the main surface (1a) of the support plate (1), the wiring conductor ( A resin sealing body (6) for sealing at least the inner end portions (4a, 5a) of (4, 5). The resin sealing body (6) is formed of a thermosetting epoxy black resin. The internal cavity (3a) of the reflector (3) is formed in a hollow structure or filled with a resin having a high refractive index and light transmittance. The conductive relay member (9) embedded in the reflector (3) is exposed in the internal cavity (3a) of the reflector (3) and is electrically connected to the electrode of the semiconductor light emitting element (2) by the lead wire (8). Connected inner end (9a) and outer end exposed from the outer periphery (3g) of the reflector (3) to the outside of the reflector (3) and electrically connected to the wiring conductors (4, 5) Part (9b).
[0016]
Since the inner end (9a) of the relay member (9) is exposed in the internal cavity (3a) of the reflector (3), the semiconductor light emitting element (2) and the relay member (9) can be arranged close to each other. In the wire bonding, the electrode of the semiconductor light emitting element (2) and the relay member (9) can be easily connected with the short lead wire (8). In this case, the length of the fine lead wire (8) can be shortened, and the fine lead wire (8) does not pass through the upper surface of the reflector (3), so that deformation of the fine lead wire (8) can be prevented.
[0017]
The method of manufacturing a semiconductor light emitting device according to the present invention is to fix the relay member (9) in the reflector cavity (23) of the reflector mold (20), and supply resin into the reflector cavity (23). With internal cavity (3a) The step of molding the reflector (3), the step of fixing the reflector (3) to the support plate (1) of the lead frame (11), and the semiconductor light emitting device fixed to the support plate (1) in the internal cavity (3a) The element (2) and the relay member (9) are connected by the thin lead wires (8), and the relay member (9) is electrically connected to the wiring conductors (4, 5) to thereby connect the lead frame assembly (10). The lead frame assembly (10) is fixed in the sealing body cavity (27) of the sealing body mold (24), and the upper surface of the reflector (3) is sealed with the sealing body cavity (27). Close to the top surface of While preventing the sealing resin from flowing into the internal cavity (3a) of the reflector (3), In the sealing body cavity (27) Made of fluidized thermosetting epoxy black resin At least the step of supplying the sealing resin, the outer peripheral portion (3g) of the reflector (3), the main surface (1a) of the support plate (1), and the inner ends (4a, 5a) of the wiring conductors (4, 5) Form a resin sealing body (6) to seal , Joining the reflector (3) and the support plate (1). The upper surface of the reflector (3) is closely attached to the upper surface of the sealing body cavity (27), so that the resin sealing body (6) can be formed while easily preventing the sealing resin from flowing into the internal cavity (3a). . Therefore, since the semiconductor light emitting element (2) is not covered with the resin sealing body (6), the resin sealing body (6) can be formed of a heat resistant resin.
[0018]
DETAILED DESCRIPTION OF THE INVENTION
Next, an embodiment of a semiconductor light emitting device according to the present invention applied to a high light output type light emitting diode (LED) and a manufacturing method thereof will be described with reference to FIGS.
As shown in FIGS. 1 and 2, the light-emitting diode according to the present invention is made of a resin made of a support plate (1) and a resin plate fixed to the main surface (1a) of the support plate (1) and having an internal cavity (3a). Reflector (3), a light emitting diode chip (2) as a semiconductor light emitting element fixed to the main surface (1a) of the support plate (1) in the internal cavity (3a) of the reflector (3), and a support plate ( A plurality of wiring conductors (4, 5) arranged around 1) and electrically connected to the electrodes of the light-emitting diode chip (2), the outer peripheral portion (3g) of the reflector (3), the support plate (1 ) And a heat resistant resin sealing body (6) for sealing at least the inner end portions (4a, 5a) of the wiring conductors (4, 5). The internal cavity (3a) of the reflector (3) includes a light-reflective inclined surface (3b) having an opening cross-sectional area that expands in a direction away from the support plate (1), and an upper side of the inclined surface (3b). The formed cylindrical surface (3c) and a flat surface (3d) formed between the inclined surface (3b) and the cylindrical surface (3c) are provided. The conductive relay member (9) embedded in the reflector (3) is exposed in the internal cavity (3a) of the reflector (3) and is electrically connected to the electrode of the semiconductor light emitting element (2) by the lead wire (8). Connected inner end (9a) and outer end exposed from the outer periphery (3g) of the reflector (3) to the outside of the reflector (3) and electrically connected to the wiring conductors (4, 5) Part (9b).
[0019]
The reflector (3) fixed to the support plate (1) or integrally formed with the support plate (1) is formed of a non-conductive material, for example, a white powder, similar to the reflector (110) shown as the prior art. It is formed of a transparent, translucent or opaque resin such as a liquid crystal polymer, ABS resin, epoxy resin, or polycarbonate resin. As shown in FIGS. 3 to 5, the reflector (3) includes a main body (3 i) having a conical internal cavity (3 a) at the center and formed in a substantially cubic shape, and a main body ( A fixing portion (3j) extending outward from the back surface along the bottom surface of 3i), and an engaging portion (3e) extending outward from the front surface of the main body portion (3i) and inclined from the upper surface to the lower surface. . In the present embodiment, as shown in FIG. 3, the pair of relay members (9) are fixed to the main body (3i) of the reflector (3) with the engaging portion (3e) interposed therebetween. The relay member (9) is formed in a substantially strip shape including an inclined corner, and the inclined corner is exposed as an inner end (9a) in the internal cavity (3a) of the reflector (3), and the relay member ( The outer end portion (9b) opposite to the inner end portion (9a) in the length direction of 9) is exposed from the outer peripheral portion (3g) of the reflector (3).
[0020]
The relay member (9) is made of, for example, a highly conductive metal such as copper, and as shown in FIG. 3, parallel to the support plate (1) and spaced apart from the support plate (1) by a certain distance, It is arranged above (4,5). Since the inner end (9a) of the relay member (9) protrudes upward from the flat surface (3d) outside the inclined surface (3b) of the reflector (3) and is disposed in the internal cavity (3a), Since the light reflected by the inclined surface (3a) is not blocked by the member (9), the luminance of the light emitting diode can be improved.
[0021]
Further, as shown in FIGS. 3 and 5, the relay member (9) has a through portion (9 d) filled with a resin constituting the reflector (3). With the resin filled in the through-hole (9d), it is possible to prevent the relay member (9) from being detached from the reflector (3). As shown in FIGS. 3 and 4, the reflector (3) of the present embodiment includes a reflecting plate (15) having a shape similar to that of the inclined surface (3b) on the inclined surface (3b). The reflector (15) is made of a metal such as aluminum and improves the light reflectivity of the inclined surface (3b) of the reflector (3) made of a resin such as a white resin by making the surface a mirror shape. Can do.
[0022]
The resin sealing body (6) is formed of an opaque or translucent resin having a relatively high content of a compound (filler) such as silica and having a high softening point. In this embodiment, the resin content is increased by using a thermosetting epoxy black resin that has a high compound content compared to the light-transmitting resin, has excellent heat resistance, and is used for power transistors and other packages. Since the body (6) is formed, even if heat from the light emitting diode chip (2) is continuously applied to the resin sealing body (6), the adhesion of the resin sealing body (6) does not deteriorate so much. For this reason, there is no gap between the resin sealing body (6) and the wiring conductor (4, 5), and the environmental resistance performance of the resin sealing body (6) can be obtained well over a long period of time. Thus, a highly reliable high light output light emitting diode can be obtained.
[0023]
Although not shown, in the present invention, a lens portion made of a light-transmitting or transparent resin having a relatively small compound content may be provided on the upper surface of the reflector (3). The lens part has a lower softening point than the resin-encapsulated body (6), but is disposed away from the light-emitting diode chip (2) and is not directly affected by heat, so the resin-encapsulated body (6 ) And a resin having low heat resistance. However, if the light emitted to the outside has sufficient directivity by the reflector (3), the lens portion is not necessary. Further, although not shown, the internal cavity (3a) of the reflector (3) may be filled with a resin having a high refractive index and light transmittance. For example, a light transmissive heat-resistant silicone resin is filled into the internal cavity (3a) of the reflector (3) using a known dispenser. The light emitting diode chip (2) and the fine lead wire (8) can be protected by silicone resin. Silicone resin is superior in heat resistance as compared to the light-transmitting resin constituting the lens part, but the lens part cannot be formed from a silicone resin having fluidity. The internal cavity (3a) of the reflector (3) may be filled with a coating material made of polymetalloxane or ceramic having light transmittance.
[0024]
When the support plate (1) is made of metal such as copper, aluminum, copper alloy or aluminum alloy having a thermal conductivity of 190 kcal / mh ° C or higher, a large current is passed through the light emitting diode chip (2) through the wiring conductors (4, 5). It is possible to obtain a semiconductor light emitting device that can be released to the outside through a metal support plate (1) having a high thermal conductivity and that emits light with high brightness by operating with a large current. it can. In the conventional light emitting diode structure, the thermal resistance is as high as about 400 ° C./W, and it is driven by a current of about 20 mA. By providing a metal support plate (1), light is emitted by a large current exceeding 350 mA. Can be made.
[0025]
When the light emitting diode shown in FIG. 1 is manufactured, a frame such as the lead frame (11) shown in FIGS. The lead frame (11) includes openings (11a) formed at regular intervals, a plurality of wiring conductors (4, 5) protruding inward in the width direction in the openings (11a), and wiring conductors (4, 5), a plurality of support leads (11b) protruding inward in the width direction in the opening (11a), and a support plate (1) connected to the pair of support leads (11b).
[0026]
The reflector (3) is bonded to the main surface (1a) of the support plate (1) with an adhesive (not shown) such as a thermosetting epoxy resin, and is supported in the internal cavity (3a) of the reflector (3). The main surface (1a) of the plate (1) is exposed. The minimum inner diameter of the internal cavity (3a) of the reflector (3) is larger than the width (side length) of the light emitting diode chip (2), and the support plate (1) exposed in the internal cavity (3a) of the reflector (3) When the light emitting diode chip (2) is fixed to the main surface (1a), the light emitting diode chip (2) can be surrounded by the reflector (3). When the reflector (3) of the present embodiment is fixed to the main surface (1a) of the support plate (1), the reflector (3) is fixed by the fixing portion (3j) that expands the area of the bottom surface of the reflector (3). Further, it can be firmly fixed to the main surface (1a) of the support plate (1).
[0027]
In the present embodiment, the relay member (9) is fixed in the reflector cavity (23) of the reflector mold (20), the resin is supplied into the reflector cavity (23), and separated from the support plate (1). A reflector (3) having an internal cavity (3a) that forms a light-reflective inclined surface (3b) having an opening cross-sectional area that expands in the direction is formed. As shown in FIG. 8, the reflector mold (20) has an upper mold (21) and a lower mold (22) that form a reflector cavity (23), and the lower mold (22) is an upper mold (21 ) And the lower die (22) are provided with a step portion (22a) that holds the relay member (9) together with the upper die (21). The step (22a) of the lower mold (22) positions the relay member (9) at a predetermined position in the reflector cavity (23). The reflector mold (20) is an intermediate mold fixed to the upper mold (21) and abutted against the inner surface of the lower mold (22) when the upper mold (21) and the lower mold (22) are closed. (21a). The intermediate mold (21a) is formed with an increased diameter in the direction of the upper mold (21), and forms an inclined surface (3b) of the reflector (3) when resin is supplied into the reflector cavity (23). In the illustrated example, the inclined surface (3b) has a circular cross section, but the inclined surface (3b) can also be formed by a rectangular cross section.
[0028]
The relay member (9) embedded in the reflector (3) is fixed to the wiring conductor (4, 5) by a conductive brazing material (17) such as silver paste or solder. In addition, the wiring means (4, 5) and the reflector (3) by the positioning means (16) constituted by the reflector (3) provided with the protrusion (3f) engaged with the wiring conductor (4, 5), The outer end (9b) of the relay member (9) can be reliably connected. As shown in FIG. 9 and FIG. 10, the positioning means (16) is wide with respect to the engaging portion (3e) formed in the reflector (3) and the wiring conductor (4) and supports the wiring conductor (4). It is comprised by the inner end part (4a) formed in the front-end | tip part adjacent to a board (1). As shown in FIG. 9, the engaging portion (3e) has two protruding portions (3f) protruding downward from the tip of the engaging portion (3e), and the two protruding portions (3f) Separation distance H ₁ Is the dimension h in the width direction of the wiring conductor (4). ₁ Larger than the dimension h in the width direction of the inner end (4a) of the wiring conductor (4) ₂ Is set smaller than (h ₁ <H ₁ <H ₂ ). Further, as shown in FIG. 10, the separation distance H between the protrusion (3f) and the outer periphery (3g) of the reflector (3). ₂ Is the length dimension h of the inner end (4a) of the wiring conductor (4). _Three Larger than (h _Three <H ₂ ). When fixing the reflector (3) to the main surface (1a) of the support plate (1), connect the inner end (4a) of the wiring conductor (4) to the protrusion (3f) and the outer periphery of the reflector (3) (3g ) And the wiring conductor (4) between the two protrusions (3f), the reflector (3) is positioned relative to the support plate (1) and the wiring conductors (4, 5). can do. At the same time that the support plate (1) and the reflector (3) are fixed, the other four wires except for the one wiring conductor (4) engaged with the engaging portion (3e) of the reflector (3). The conductor (5) is fixed to the lower surface of the outer end (9b) of the relay member (9) via the conductive brazing material (17).
[0029]
Thereafter, as shown in FIG. 11, using a known die bonder, the main surface of the support plate (1) exposed in the internal cavity (3a) of the reflector (3) with an adhesive such as a conductive or insulating paste. The light emitting diode chip (2) is fixed to (1a). In the present embodiment, the light emitting diode chip (2) is fixed before the resin sealing step (transfer molding step), but the order of the manufacturing steps can be variously changed. Further, before the reflector (3) is fixed to the support plate (1), the light emitting diode chip (2) can be fixed to the main surface (1a) of the support plate (1) in advance.
[0030]
As shown in FIG. 12, the light emitting diode chip (2) fixed to the support plate (1) in the internal cavity (3a) and the relay member (9) are connected by the thin lead wire (8). Since the thin lead wire (8) does not pass through the upper surface of the reflector (3), the diameter of the inclined surface (3b) of the reflector (3) or the opening cross-sectional area is reduced, and the height from the support plate (1) is increased. The directivity and front brightness can be improved. The light-emitting diode chip (2) includes an anode electrode and a cathode electrode (not shown) formed on the main surface of the semiconductor substrate, and is connected to the anode electrode and the cathode via the lead wire (8) by a well-known wire bonding method for bonding with a capillary. The electrodes are respectively connected to the inner ends (9a) of the pair of relay members (9) exposed in the inner cavity (3a) of the reflector (3). As described above, the outer end portion (9b) of the relay member (9) penetrating the reflector (3) is exposed from the outer peripheral portion (3g) of the reflector (3) and connected to the wiring conductor (5). Therefore, the anode electrode and the cathode electrode of the light emitting diode chip (2) are electrically connected to the wiring conductor (5). As a result, the lead frame assembly (10) is formed.
[0031]
In another embodiment of the present invention, the relay member (9) exposing the anode electrode formed on the main surface of the light emitting diode chip (2) into the internal cavity (3a) of the reflector (3) via the lead wire (8). The cathode electrode formed on the other surface of the light emitting diode chip (2) may be electrically connected to the support plate (1). That is, as shown in FIG. 13, the upper electrode of the light emitting diode chip (2) is connected to the inner end (9a) of the single relay member (9) embedded in the reflector (3), and the lead wire (8) Of the light emitting diode chip (2) with a metal (conductive) exposed in the internal cavity (3a) of the reflector (3) with a conductive adhesive such as solder or conductive paste. It can be fixed to the main surface (1a) of the support plate (1).
[0032]
Subsequently, the outer periphery (3g) of the reflector (3), the support plate (1), and the inner ends (4a, 5a) of the wiring conductors (4, 5) are covered with a resin by a well-known transfer mold method. A sealing body mold (24) for forming the body (4) is prepared. As shown in FIG. 14, the sealing body mold (24) includes an upper mold (25) that is a movable mold and a lower mold (26) that is a stationary mold. Sealed body cavity (vacant space) (27) that matches the shape of the resin sealed body (6) in the sealed body mold (24) when the upper mold (25) and lower mold (26) are closed Is formed. A gate (resin injection hole) (28) connected to the runner (resin introduction path) (29) is formed on one side surface of the sealing body cavity (27). Further, on the other side surface of the sealing body cavity (27) opposite to the side on which the gate (28) is formed, five wiring conductors (4, 5) constituting the lead frame assembly (10) are provided. A lead receiving groove (30) to be disposed is formed. When the lead frame (11) to which the reflector (3) is fixed is placed in the sealing body mold (24) and the upper mold (25) and the lower mold (26) are closed, the wiring conductor (4, 5) Is held between the lead receiving groove (30) of the lower die (26) and the upper die (25), and the upper surface of the reflector (3) is in close contact with the upper surface of the sealing body cavity (27). In this state, the fluidized resin is pressed and injected into the sealing body cavity (27) through the runner (29) and the gate (28). At this time, the inside covered by the upper surface of the sealing body cavity (27) The resin does not enter the cavity (3a).
[0033]
Although not shown, a cover made of resin may be attached to the upper part of the reflector (3) to seal the internal cavity (3a) of the reflector (3). For example, a cover made of a PET resin base material has excellent heat resistance and does not fuse to the reflector (3) due to heating during the resin press-fitting process. The cover adhered to the upper surface of the reflector (3) is removed after the lead frame assembly (10) is taken out from the sealing body mold (24). Further, a sheet made of an elastic resin is disposed between the support plate (1) and the reflector (3), and the reflector (3) is brought into contact with the upper surface of the sealing body cavity (27) so that the reflector (3 ) May be prevented from entering the internal cavity (3a). The sheet may be laid on the bottom surface of the sealing body cavity (27) and sandwiched between the support plate (1) and the lower mold (26). In this case, the sheet can be removed after the resin sealing body (6) is formed. In addition, the entire reflector or the upper surface side of the reflector (3) is selectively made of a soft resin, the reflector (3) is crushed by the upper mold (25), and the upper surface of the reflector (3) is sealed with a sealed body cavity (27 ) May be molded in close contact with the resin. As shown in FIGS. 3 and 14, the upper surface of the reflector (3) on the gate (28) side is provided with a roundness (3h) in order to prevent deformation due to the pressure of the injected sealing resin. Further, when resin molding is performed, the bottom surface of the support plate (1) may or may not be covered with the resin sealing body (6).
[0034]
When the lead frame assembly (10) is taken out from the sealing body mold (24), as shown in FIGS. 1 and 2, the outer peripheral portion (3g) of the reflector (3), the support plate (1), the wiring conductor ( A resin sealing body (6) that covers the inner end portions (4a, 5a) of 4,5) is formed. Further, as shown in FIG. 1, in order to mold the relay member (9) formed integrally with the reflector (3) into the resin sealing body (6), the reflector (3) is made of the resin sealing body. (6) is securely held within. In another embodiment of the present invention, the lead frame assembly (10) is fixed in the sealing body cavity (27) of the sealing body mold (24), and the sealing resin is injected into the internal cavity (3a). While preventing the inflow, sealing resin is supplied into the sealing body cavity (27), and the reflector (3) and the support plate (1) are combined to form the resin sealing body (6). The reflector (3) and the support plate (1) are pressed and fixed to the main surface (1a) of the support plate (1) by pressurization by the upper mold (25) and are sealed with resin. It is fixed by the covering of the body (6). Therefore, the step of bonding the reflector (3) to the main surface (1a) of the support plate (1) with an adhesive such as the thermosetting epoxy resin described above is omitted, and the reflector (3) and the support plate (1) are removed. It is also possible to combine them. Further, the relay member (9) may be held in a molding die, and the reflector (3) and the support plate (1) may be integrally molded with a non-conductive material such as resin. Since the support plate (1) is formed of a non-conductive material such as resin, the heat dissipation effect of the light emitting diode by the support plate (1) is reduced, but the reflector (3) and the support plate (1) are formed integrally. Thus, the step of determining the position of the reflector (3) relative to the support plate (1) and the wiring conductor (4, 5) and the step of fixing the reflector (3) to the support plate (1) are omitted. Can do. Thereafter, unnecessary portions are removed from the lead frame assembly 10 to obtain the completed light emitting diode shown in FIG.
[0035]
In the light-emitting diode of the present invention, the heat generated when a large current is passed to turn on the light is well released to the outside through the metal support plate (1) having a high thermal conductivity, so that a light-emitting diode with high light output can be obtained. . Further, in the embodiment shown in FIGS. 1 and 2, the inner end (9a) of the relay member (9) embedded in the reflector (3) is exposed in the inner cavity (3a), and the relay member ( Since the inner end (9a) of 9) and the electrode of the semiconductor light emitting device (2) are connected by the fine lead wire (8), the following effects can be further obtained.
[0036]
[1] The semiconductor light emitting element (2) and the relay member (9) that are close to each other can be connected by the short lead wire (8), and a short circuit accident due to the droop of the lead wire (8) can be prevented.
[2] Wire bonding can be ensured in a short time by moving the capillary with a short stroke.
[3] Since the fine lead wire (8) does not pass through the upper surface of the reflector (3), the upper surface of the reflector (3) is brought into close contact with the upper surface of the sealing body cavity (27) and easily into the internal cavity (3a). The resin sealing body (6) can be formed while preventing the inflow of the sealing resin.
[4] Thereby, the resin sealing body (6) is formed of a heat-resistant black resin, and the interior cavity (3a) of the reflector (3) is filled into a hollow structure or with a non-heat-resistant light-transmitting resin. be able to.
[5] Further, in the conventional light emitting diode, it was impossible to make a mark indicating product identification. However, in the present embodiment, since the resin sealing body (6) can be formed of a black resin, it is integrated. Like the circuit or the transistor, the surface of the resin package can be marked with a laser or the like.
[6] Since the connection of the lead wire (8) can be restricted only to the internal cavity (3a), the interior space (3a) is completely sealed by the reflector (3) and the support plate (1), and the internal cavity ( It is possible to prevent foreign matter from entering the inside of 3a), prevent the light emitting diode chip (2) from deteriorating, and extend the life of the semiconductor light emitting device.
[7] Since the internal cavity (3a) of the reflector (3) in which the light emitting diode chip (2) is disposed forms a hollow portion, avoid thermal degradation of the resin that directly contacts the light emitting diode chip (2). Can do.
[8] A strong mechanical structure of the reflector (3) is formed by the relay member (9) embedded in the reflector (3), and the reflector (3) and the support plate (1) are formed by the resin sealing body (6). And can be securely fixed.
[9] The heat dissipation effect can be enhanced by the metal relay member (9).
[0037]
【The invention's effect】
In the present invention, the lead wire connected to the semiconductor light emitting element can be prevented from being deformed by the relay member embedded in the reflector, and the reflector can easily form a semiconductor light emitting device having a hollow structure. It is possible to provide a semiconductor light emitting device in which adverse effects due to heat generation do not occur even when formed of a conductive resin and operated with a large current. In addition, since the conventional parts other than the reflector can be used, the above-described effect can be achieved at a low cost.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of a light emitting diode according to an embodiment of the present invention.
FIG. 2 is a top view of the light emitting diode according to the present embodiment.
FIG. 3 is a top view of a reflector according to the present embodiment.
4 is a cross-sectional view taken along the line BB in the reflector of FIG.
FIG. 5 is a cross-sectional view taken along the line CC in the reflector of FIG.
FIG. 6 is a top view of the lead frame according to the present embodiment.
7 is a cross-sectional view taken along DD in the lead frame of FIG.
8 is a cross-sectional view showing a process of forming the reflector of FIG. 3 by a transfer mold method.
FIG. 9 is a sectional view showing positioning means according to the present embodiment.
10 is a side view showing the positioning means of FIG. 9;
FIG. 11 is a top view of the lead frame assembly according to the present embodiment.
12 is a partial perspective view showing the inside of the reflector of FIG. 3;
FIG. 13 is a top view of a lead frame assembly according to another embodiment of the present invention.
14 is a cross-sectional view showing a process of forming the light-emitting diodes of FIGS. 1 and 2 by a transfer mold method.
FIG. 15 is a perspective view of a conventional light emitting diode.
[Explanation of symbols]
(1) ・ ・ Support plate, (1a) ・ ・ Main surface, (2) ・ Semiconductor light emitting device, (3) ・ ・ Reflector, (3a) ・ ・ Internal cavity, (3b) ・ ・ Inclined surface, (3c ) ・ ・ Cylindrical surface, (3d) ・ ・ Flat surface, (3g) ・ ・ Outer peripheral part, (4,5) ・ ・ Wiring conductor, (4a, 5a) ・ ・ Inner end, (6) ・ ・ Resin seal Stopper, (8) ・ ・ Lead thin wire, (9) ・ ・ Relay member, (9a) ・ ・ Inner end, (9b) ・ ・ Outer end, (9d) ・ ・ Penetration, (10) ・ ・Lead frame assembly, (11) ... Lead frame, (16) ... Positioning means, (20) ... Reflector mold, (23) ... Reflector cavity, (24) ... Sealing body mold, ( 27) .. Sealing cavity

Claims (5)

A support plate, a resin reflector fixed to the main surface of the support plate and having an internal cavity formed therein, and a semiconductor light emitting element disposed in the internal cavity of the reflector and fixed to the main surface of the support plate A plurality of wiring conductors arranged around the support plate and electrically connected to the electrodes of the semiconductor light emitting element, an outer peripheral portion of the reflector, a main surface of the support plate, and an inner end of the wiring conductor In a semiconductor light emitting device having a resin sealing body that seals at least a part,
The resin sealing body is formed of a thermosetting epoxy black resin,
The internal cavity of the reflector is formed in a hollow structure or filled with a resin having a high refractive index and light transmittance,
The conductive relay member embedded in the reflector includes an inner end portion exposed in the internal cavity of the reflector and electrically connected to the electrode of the semiconductor light emitting device by a thin lead wire, and an outer peripheral portion of the reflector A semiconductor light emitting device comprising: an outer end portion exposed to the outside of the reflector and electrically connected to the wiring conductor. The internal cavity of the reflector includes a light-reflective inclined surface having an opening cross-sectional area that expands in a direction away from the support plate,
The relay member is disposed substantially parallel to the support plate and spaced apart from the support plate by a predetermined distance above the wiring conductor.
2. The semiconductor light emitting device according to claim 1, wherein an inner end portion of the relay member is disposed in the internal cavity outside an inclined surface of the reflector. The internal cavity of the reflector includes a light-reflective inclined surface, a cylindrical surface formed above the inclined surface, and a flat surface formed between the inclined surface and the cylindrical surface,
The semiconductor light emitting device according to claim 1, wherein an inner end portion of the relay member protrudes upward from the flat surface outside the inclined surface. By means of positioning means having a protrusion of the reflector that engages with the wiring conductor, the reflector is held in a predetermined position;
The semiconductor light-emitting device according to claim 1, wherein an outer end portion of the relay member is fixed to the wiring conductor by a conductive brazing material. Fixing the relay member in the reflector cavity of the reflector mold, supplying resin into the reflector cavity, and molding the reflector with the internal cavity;
Fixing the reflector to a support plate of a lead frame;
A step of forming a lead frame assembly by connecting the semiconductor light emitting element fixed to the support plate in the internal cavity and the relay member by a thin lead wire, and electrically connecting the relay member to a wiring conductor. When,
The lead frame assembly is fixed in the sealing body cavity of the sealing body molding die, and the upper surface of the reflector is brought into close contact with the upper surface of the sealing body cavity, so that the sealing resin into the internal cavity of the reflector is Supplying a sealing resin composed of a thermosetting epoxy black resin fluidized into the sealing body cavity while preventing inflow ;
Forming a resin sealing body that seals at least an outer peripheral portion of the reflector, a main surface of the support plate, and an inner end portion of the wiring conductor , and coupling the reflector and the support plate. A method for manufacturing a semiconductor light emitting device.

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