JP4291193B2 - Optical processing apparatus and processing apparatus - Google Patents

Description

  The present invention is a process using a reaction caused by light irradiation, such as photo oxidation, photo CVD (photo CVD), photo ashing, photo cleaning, photo etching ( The present invention relates to an optical processing apparatus that performs photo etching, photo epitaxy, and the like, and a processing apparatus that includes the optical processing apparatus.

  A method of treating a substrate using a reaction that occurs by irradiating light has a feature that there is no ion damage and a good interface can be formed. For example, the following methods are conventionally known as methods for forming an insulating film (oxide film) on a silicon substrate by photo-oxidation.

  First, the silicon substrate is set in a vacuum container, and the inside of the vacuum container is evacuated by a vacuum exhaust system. By cleaning the surface of the silicon substrate in a vacuum container by a dry cleaning method, contaminants such as organic substances and natural oxide films are removed from the surface of the silicon substrate. Thereafter, the silicon substrate is heated and oxygen gas is introduced into the vacuum vessel. Turn on the UV lamp and irradiate the oxygen gas with UV light. As a result, an ultrathin oxide film as a protective film is formed on the surface of the silicon substrate. The silicon substrate is taken out from the vacuum vessel and transferred to the oxidizer. An insulating oxide film is formed on the surface of the silicon substrate with an oxidizer (see, for example, Patent Document 1).

  Incidentally, when an oxide film is formed on a substrate by photo-oxidation, a xenon excimer lamp may be used in place of an ultraviolet lamp. In this case, for example, an optical processing device as described below is used.

The photo-oxidation apparatus includes a processing container, a support table that supports a substrate, a xenon excimer lamp, a lamp house, and the like. The support base is provided in the processing container. A gas inlet is provided in the processing container, and oxygen gas is introduced into the processing container from the gas inlet. Further, the processing container is provided with a gas discharge port, and the gas in the processing container is discharged from the gas discharge port. A light transmissive window made of a translucent member is provided on the upper wall of the processing container as a part of the upper wall. The area of the light transmission window is set to be larger than the area of the surface to be processed of the substrate to be optically processed. The lamp house is provided outside the processing container. A xenon excimer lamp is provided in the lamp house (see, for example, Patent Document 2).
Japanese Unexamined Patent Publication No. 7-74165 (paragraphs 0008 to 0016, FIG. 1) JP 2003-151974 A

However, the photooxidation apparatus as described above has the following problems. That is, in the case where an oxide film is formed on a silicon substrate, in order to prevent impurities from being mixed into the formed oxide film, the inside of the processing container is temporarily provided prior to the execution of the photo-oxidation process. I try to exhaust. Thus, when the inside of the processing container is once exhausted, the light transmission window has a gas pressure difference between approximately atmospheric pressure and a pressure close to approximately vacuum, that is, approximately 1 kg / cm ² (9.80665 × 10 ⁴ Pa). The power of. Therefore, it is necessary to set the thickness of the light transmission window to a thickness that can withstand this gas pressure difference.

Table 1 below shows the size of the synthetic quartz plate, the plate thickness necessary to withstand the gas pressure difference between about atmospheric pressure and a pressure close to about vacuum, and the light with a wavelength of 172 nm emitted from the xenon excimer lamp. The transmittance is shown.

  As shown in Table 1, when the light transmission window is about 6 inches in diameter, the thickness of the light transmission window may be about 4.3 mm. However, if the light transmission window is made as large as a circle having a diameter of 300 mm or a 250 mm square, the thickness of the light transmission window needs to be about 30 mm or more. In other words, the larger the substrate to be processed, the greater the thickness of the light transmission window. In particular, liquid crystal display devices for TV tend to be large, and recently, 30-inch and 40-inch sizes have been commercialized.

  On the other hand, FIG. 11 shows the relationship between the wavelength of light and the light transmittance with respect to a synthetic quartz plate (thickness 1 mm, 10 mm, 30 mm). As shown in FIG. 11, the transmittance of light in the vicinity of a wavelength of 172 nm with respect to the synthetic quartz plate rapidly decreases as the thickness of the synthetic quartz plate is increased. When the thickness of the synthetic quartz plate is 30 mm, the transmittance of light having a wavelength of 172 nm is about 30%.

  That is, when the substrate to be photooxidized is a circle having a diameter of 300 mm or a size of 250 mm square, the thickness of the synthetic quartz plate needs to be about 30 mm. However, if the thickness of the synthetic quartz plate is about 30 mm, the light that can be effectively used for the 172 nm wavelength light emitted from the xenon excimer lamp becomes 1/3 or less, and the photo-oxidation processing speed of the semiconductor substrate to be processed becomes high. It will drop significantly.

  Thus, as the size of the light transmission window is set larger (for a large substrate), the photo-oxidation processing apparatus needs to increase the thickness of the light transmission window. The attenuation of light when passing through the window is increased. In addition, when the photo-oxidation treatment is performed on a large substrate such as a liquid crystal display device having a 1 m square, the thickness of the synthetic quartz becomes extremely thick. Accordingly, the processing apparatus as described above is not practical for processing a large substrate such as a liquid crystal display device.

  The object of the present invention has been made based on such circumstances, and can suppress the ratio of light emitted from a light source to be absorbed by a light transmission window, and can satisfactorily emit light over the entire surface to be processed of a substrate. Is to obtain a light processing apparatus capable of irradiating the light, and a processing apparatus including the light processing apparatus.

  An optical processing apparatus according to a first aspect of the present invention is an optical processing apparatus that optically processes a surface to be processed of a substrate, and includes a processing container, a light source provided outside the processing container, and the processing container. At least two light transmission windows provided side by side so as to constitute a part of the wall and transmitting the light emitted from the light source to the inside of the processing container; and the processing in a state facing the light transmission window A support base provided inside the container and supporting the substrate; and a cross-sectional shape provided so as to constitute a part of the wall of the processing container and supporting the light transmission window is tapered in the direction of the support base. It comprises.

  The optical processing apparatus according to the first aspect of the present invention is a process using a reaction that occurs by irradiating light, for example, photo oxidation, photo CVD (photo CVD), photo ashing, It can be suitably used when performing photo cleaning, photo etching, photo epitaxy or the like.

  In order for at least a part of the light emitted from the light source and transmitted through each light transmission window to overlap on the processing surface of the substrate supported on the support base, for example, an opening defined by a beam The light transmitting window is provided so as to close the light source, and the opening is formed in a shape in which the light emitted from the light source spreads toward the support base by the design of the reflecting plate or the like. In order to form the opening in a shape in which light emitted from the light source spreads toward the support base, for example, the cross-sectional shape of the beam is tapered from the light source side toward the support base. It is good to form. By doing so, the light emitted from the light source and transmitted through each light transmission window proceeds so as to spread toward the surface to be processed of the substrate supported by the support base. Light incident from the window can be superimposed on the target surface of the substrate supported on the support base.

  Further, in order to make at least a part of the light emitted from the light source and transmitted through each light transmission window overlap on the surface to be processed of the substrate supported on the support base, the light from the light source is directed in a desired direction. A reflection plate designed so as to obtain a desired light emission shape by reflection may be provided, and the irradiation direction of light emitted from the light source may be adjusted.

  Furthermore, when an oxide film is formed on the substrate by photo-oxidation, for example, a xenon excimer lamp or a mercury lamp can be suitably used as the light source.

  According to this light processing apparatus, at least two light transmission windows are provided side by side in a state of being supported by a beam, and light emitted from the light source enters the inside of the processing container through each of the light transmission windows. I try to let them. Therefore, the area of each light transmission window can be set smaller than the area of the surface to be processed of the substrate. That is, according to this light processing apparatus, the thickness of the light transmission window can be made thinner than before, and the ratio of the light emitted from the light source absorbed by the light transmission window can be suppressed.

  In addition, this light processing apparatus emits light from a light source so that the shadow of the beam is not formed on the surface to be processed of the substrate supported on the support table. It forms so that it may overlap on the to-be-processed surface of the board | substrate supported. Therefore, it is possible to satisfactorily irradiate light from the light source over the entire surface to be processed of the substrate supported on the support base.

The processing apparatus according to the second aspect of the present invention is
An optical processing apparatus for optically processing a surface to be processed of a substrate, the processing container, a light source provided outside the processing container, and provided side by side so as to constitute a part of the wall of the processing container, At least two light transmission windows for transmitting the light emitted from the light source to the inside of the processing container; and a support base provided inside the processing container in a state of being opposed to the light transmission window and supporting the substrate. And a light processing apparatus provided so as to constitute a part of the wall of the processing container, and a cross-sectional shape that supports the light transmission window includes a tapered beam in the direction of the support base, and
A film forming apparatus for forming a film on the processing surface of the substrate;
A communication mechanism that allows the light processing apparatus and the film forming apparatus to be freely opened and closed;

  Also in this case, an opening defined by the beam is formed so that at least a part of the light emitted from the light source and transmitted through each light transmission window overlaps on the processing surface of the substrate supported on the support base. It is designed so that the light emitted from the light source is formed in a shape that spreads toward the support base, and the light radiation shape is obtained by reflecting the light from the light source in the desired direction. A reflecting plate is provided to adjust the direction in which the light emitted from the light source is irradiated.

  For example, an existing plasma CVD apparatus (PE-CVD apparatus) or the like can be suitably used as the film forming apparatus, but the film forming apparatus is not limited to this.

  The communication mechanism can be realized, for example, by providing a gate valve between the light processing apparatus and the film forming apparatus. However, in order to suppress cross contact between the light processing apparatus and the film forming apparatus, a transfer chamber (common chamber) is provided between the light processing apparatus and the film forming apparatus, and the light processing apparatus and the transfer chamber are provided. It is preferable to provide a first gate valve between the two and a second gate valve between the transfer chamber and the film forming apparatus.

  According to this processing apparatus, in the substrate processing apparatus, the ratio of the light emitted from the light source absorbed by the light transmission window can be suppressed, and the entire surface to be processed of the substrate can be irradiated with good light. . In addition, according to this processing apparatus, since the optical processing apparatus and the film forming apparatus are communicated with each other via a freely openable / closable communication mechanism, the substrate subjected to the optical processing by the optical processing apparatus can be formed without breaking the vacuum. Can be carried into the device. That is, according to this processing apparatus, after the light processing in the light processing apparatus, it is possible to continuously perform the film forming process on the substrate without being exposed to the air. Therefore, it is possible to form a good quality film with less impurities in the air on the optically processed substrate.

A processing apparatus according to a third aspect of the present invention includes a first optical processing apparatus that performs optical processing on a surface to be processed of a substrate, and a second optical processing apparatus that further performs optical processing on the surface to be processed of the substrate. A communication mechanism for opening and closing communication between the first light processing apparatus and the second light processing apparatus,
Each of the first and second optical processing apparatuses is an optical processing apparatus for optically processing a surface to be processed of a substrate, and includes a processing container, a light source provided outside the processing container, and the processing container. At least two light transmission windows provided side by side so as to constitute a part of the wall and transmitting the light emitted from the light source to the inside of the processing container; and the processing in a state facing the light transmission window A support base provided inside the container and supporting the substrate; and a cross-sectional shape provided so as to constitute a part of the wall of the processing container and supporting the light transmission window is tapered in the direction of the support base. It comprises.

  Also in this case, an opening defined by the beam is formed so that at least a part of the light emitted from the light source and transmitted through each light transmission window overlaps on the processing surface of the substrate supported on the support base. It is designed so that the light emitted from the light source is formed in a shape that spreads toward the support base, and the light radiation shape is obtained by reflecting the light from the light source in the desired direction. A reflecting plate is provided to adjust the direction in which the light emitted from the light source is irradiated.

  The communication mechanism can be realized, for example, by providing a gate valve between the first light processing device and the second light processing device. However, in order to suppress cross contact between the first light processing device and the second light processing device, a transfer chamber (common chamber) is provided between the first light processing device and the second light processing device. ), And a first opening / closing means such as a gate valve or a load lock is provided between the first light processing device and the transfer chamber, and a gate valve or the like is provided between the transfer chamber and the second light processing device. It is preferable to provide a second opening / closing means such as a load lock.

  According to this processing apparatus, the ratio of the light emitted from the light source absorbed by the light transmission window can be suppressed in both the first and second light processing apparatuses, and the entire surface to be processed of the substrate is good. Can be irradiated with light. Moreover, according to this processing apparatus, since the first optical processing apparatus and the second optical processing apparatus are communicated with each other via an openable / closable communication mechanism, the substrate subjected to the optical processing with the first optical processing apparatus The second optical processing apparatus can perform optical processing without breaking the vacuum. That is, according to this processing apparatus, after the first light processing in the first light processing apparatus, the second light processing apparatus continuously performs the second light processing on the substrate without being exposed to the air. Can be applied.

  Hereinafter, the first embodiment of the present invention will be described with reference to FIGS. 1 to 6. In this embodiment, an optical processing apparatus according to an embodiment of the present invention, for example, an optical processing apparatus that can be suitably used when an oxide film (insulating film) is formed on a substrate using light will be described as an example. .

  As shown in FIG. 1, the light processing apparatus 10 is, for example, a photo-oxidation processing apparatus, and includes a vacuum reaction chamber 11 as a processing container, a lamp house 12, a light source 13, a reflector 14, a support base 15, and the like. Yes.

  The light source 13 is provided outside the vacuum reaction chamber 11, for example, on a roof plate (an upper wall 11 b described later) of the vacuum reaction chamber 11. As the light source 13, a plurality of, for example, two lamps 13a provided in parallel is suitable. In the present embodiment, as the light source 13, for example, a xenon excimer lamp as two lamps 13a provided in parallel, and two reflectors (reflecting plates) 14 provided so as to correspond to the lamps 13a, respectively. Use what you have.

  The vacuum reaction chamber 11 is an airtight container and has a bottom wall 11a, an upper wall 11b, and a side wall 11c. As shown in FIGS. 1 and 2, a plurality of, for example, two light transmission windows 16 are arranged side by side on the upper wall 11 b of the vacuum reaction chamber 11 so as to constitute a part of the wall of the vacuum reaction chamber 11. ing. The size of each light transmission window 16 is set to be smaller than the surface to be processed 100 a of the substrate 100 and the support surface 15 a of the support base 15. In the present embodiment, the size of each light transmission window 16 is 140 mm × 800 mm.

  A region around each light transmission window 16 in the upper wall 11 b is a part of the wall of the vacuum reaction chamber 11 and is also a beam 17 that supports the light transmission window 16. In other words, the light transmission window 16 hermetically closes the opening 18 (opening provided in the upper wall 11b) defined by the beam 17. Thereby, the inside of the vacuum reaction chamber 11 is kept in a vacuum.

  The optical processing apparatus 10 according to the present embodiment has a size capable of processing a relatively large liquid crystal display substrate for forming a driving circuit. By the way, since the light transmission window constitutes a part of the wall of the vacuum reaction chamber, in the large light processing apparatus as described above, the light transmission window is easily increased in size. In order to enlarge the light transmission window, it is necessary to increase the thickness of the light transmission window. However, when the light transmission window is thickened, the light transmittance decreases. Therefore, in the light processing apparatus 10 of the present embodiment, the light transmission window 16 is divided. Therefore, the size of the light transmission window 16 is 175 mm × 835 mm, and the thickness is 45 mm, and the portion inserted into the opening 18 is 140 mm × 800 mm and the insertion thickness is 20 mm.

  The mechanism in which the light transmission window 16 closes the opening 18 in an airtight manner is as follows. As shown in FIG. 1, the light transmission window 16 is provided above the first portion 16a and the first portion 16a that fits into the opening 18, and is formed to be slightly larger than the first portion 16a. The second portion 16b is integrally formed. That is, the light transmission window 16 is formed in a substantially T-shaped cross section, and the second portion 16b has an overhanging portion 16c that projects outward from the peripheral surface of the first portion 16a.

  On the other hand, the vacuum reaction chamber 11 has a sealing mechanism 19 that seals between the upper wall 11 b and the light transmission window 16. The sealing mechanism 19 has a groove 20 and an O-ring 21 provided on the upper surface of the upper wall 11b. The groove 20 is provided on the upper surface of the upper wall 11b so as to surround the opening 18. The O-ring 21 is made of, for example, a rubber material. The sealing mechanism 19 is configured by providing an O-ring 21 along the groove 20.

  The opening 18 is airtightly closed by the light transmission window 16 and the sealing mechanism 19. That is, the first portion 16 a of the light transmission window 16 is fitted in the opening 18. The O-ring 21 is disposed between the projecting portion 16c of the second portion 16b and the upper wall 11b, and seals between the light transmission window 16 and the upper wall 11b.

  Two or more light transmission windows 16 may be provided. In that case, for example, as illustrated in FIG. 3, the light transmission windows 16 may be arranged side by side along one arbitrary direction. Further, the light transmission windows 16 may be alternately arranged in two different directions. That is, as illustrated in FIG. 4, they may be alternately arranged in a so-called checkered pattern in two directions orthogonal to each other.

  The bottom wall 11a, the top wall 11b, the side wall 11c, and the light transmission window 16 are set to have such strength that the inside of the vacuum reaction chamber 11 can be decompressed to a vacuum state. As a material for forming the bottom wall 11a, the top wall 11b, and the side wall 11c, for example, aluminum can be used.

  As a material for forming the light transmission window 16, a member that is optically transparent to light emitted from the lamp 13a can be used. As will be described later, the light processing apparatus 10 of the present embodiment uses a xenon excimer lamp as the lamp 13a. In this case, the light transmission window 16 can be formed of a member that is optically transparent to light emitted from a xenon excimer lamp as the lamp 13a, for example, synthetic quartz.

  A gas discharge port 22 is provided on the wall of the vacuum reaction chamber 11, for example, the bottom wall 11 a. The inside of the vacuum reaction chamber 11 is communicated with a vacuum pump 23 through the gas discharge port 22. Therefore, the gas in the vacuum reaction chamber 11 can be exhausted to the outside of the vacuum reaction chamber 11 through the gas discharge port 22 by driving the vacuum pump 23.

A gas inlet 24 for supplying a reaction gas into the vacuum reaction chamber 11 is provided on the wall of the vacuum reaction chamber 11, for example, the side wall 11 c. The inside of the vacuum reaction chamber 11 is communicated with a gas cylinder (not shown) that contains the reaction gas via the gas introduction port 24. Therefore, the gas in the gas cylinder can be introduced into the vacuum reaction chamber 11 through the gas introduction port 24 for a desired period when desired. When the insulating film 101 (see FIG. 1) is formed on the substrate 100 by photo-oxidation, a gas containing oxygen atoms, for example, O ₂ gas, is introduced into the vacuum reaction chamber 11 from the gas introduction port 24.

When the O ₂ gas is used as the reaction gas and the oxide film 101 is formed on the substrate 100 by photo-oxidation, the lamp 13a has an energy larger than the energy that decomposes the O ₂ gas to generate an oxygen atom active species. It is necessary to adopt. Therefore, in this embodiment, for example, a straight tube xenon excimer lamp (wavelength peak: 172 nm) is adopted as the lamp 13a. The lamp 13a is not limited to a xenon excimer lamp, and for example, a mercury lamp or the like may be employed.

  A lamp house 12 is provided at one side of the vacuum reaction chamber 11, for example, above. In the lamp house 12, a lamp 13a and a reflector 14 are provided. The lamps 13a are arranged in parallel to each other so as to extend from the front side of the page to the back side of the page in FIG. Each light transmitting window 16 is provided so as to correspond to each. The reflector 14 is provided along the longitudinal direction of the lamp 13a so as to cover the lamp 13a from above. The reflector 14 reflects light emitted from the lamp 13a downward, and its shape is adjusted so that the light emitted from the lamp 13a is irradiated in a desired direction. Therefore, the light emitted from the lamp 13 a is reflected directly or indirectly by the reflector 14 and indirectly emitted in a desired direction, passes through the light transmission window 16, and enters the vacuum reaction chamber 11.

  By the way, 172 nm light emitted from a xenon excimer lamp decomposes oxygen molecules into oxygen active species. Therefore, in the case of atmospheric pressure, the light emitted from the xenon excimer lamp is absorbed by the air layer while decomposing oxygen molecules in the air layer only by the presence of an air layer of several mm. Accordingly, the light processing apparatus 10 forms the lamp house 12 so that the inside thereof is hermetically sealed, and a gas that does not absorb light having a wavelength of 172 nm emitted from the xenon excimer lamp, for example, nitrogen, in the lamp house 12 The gas is filled up to approximately atmospheric pressure. Reference numeral 25 in FIG. 1 indicates a nitrogen gas flow port. Nitrogen gas is supplied into the lamp house 12 from the outside of the lamp house 12 through the nitrogen gas circulation port 25, and nitrogen gas in the lamp house 12 is supplied to the outside of the lamp house 12 through the nitrogen gas circulation port 25. It is supposed to be discharged.

  A support base 15 having a support surface 15 a that supports the substrate 100 is provided in the vacuum reaction chamber 11. The substrate 100 is placed at a predetermined position in the vacuum reaction chamber 11 by the support base 15. The support 15 is provided with a heating device 26, for example, a heater or lamp annealing. The heating device 26 is for setting the temperature of the substrate 100 to a desired temperature.

  By the way, in the light processing apparatus 10 of this embodiment, in order to suppress the thickness of each light transmission window 16, the size of each light transmission window 16 is set to the to-be-processed surface 100a of the substrate 100 and the support surface 15a of the support base 15. The light transmission windows 16 are arranged side by side in a state of being supported by the beams 17. Therefore, the light emitted from the lamp 13 a enters from the light transmission windows 16 and enters the vacuum reaction chamber 11 through the light transmission windows 16. In such a case, usually, the shadow of the beam 17 is likely to be generated in a region below the beam 17 located between the two light transmission windows 16.

  On the other hand, in this light processing apparatus 10, the light emitted from the lamp 13 a and transmitted through each light transmission window 16 so that the region below the beam 17 located between the two light transmission windows 16 is not shaded. However, they overlap each other on the support surface 15a of the support table 15, more preferably on the processing surface 100a of the substrate 100 placed on the support table 15.

  Specifically, the support base 15 is provided so as to face the beam 17 positioned between the light transmission windows 16, and the shape of the opening 18 closed by the light transmission window 16 is changed to the light emitted from the light source 13. Is configured to expand toward the support base 15 side. That is, the cross-sectional shape of the beam 17 is formed in an isosceles trapezoidal shape that tapers from the upper side (the lamp 13a side) to the lower side (the support base 15 side). In addition, in order that at least a part of the light emitted from the light source 13 and transmitted through each light transmission window 16 overlaps on the processing surface 100 a of the substrate 100 supported on the support base 15, Is reflected in a desired direction, a reflector 14 designed to obtain a desired shape as a light emission shape is provided, and the direction in which the light emitted from the light source 13 is irradiated is adjusted.

  By doing so, as shown in FIG. 5, the light incident from the light transmission window 16 travels while spreading in the vacuum reaction chamber 11, and is a region facing the beam 17 of the support surface 15a (that is, the shadow of the beam 17). Area that is easy to create). Therefore, the irradiance can be made substantially uniform over the entire surface 100a of the substrate 100 supported on the support base 15. That is, uniform light processing (for example, photooxidation) is possible.

  In order to allow the light emitted from the lamp 13a and transmitted through each light transmission window 16 to overlap well on the processing surface 100a of the substrate 100 supported on the support base 15, the openings 18 and Not only the shape of the beam 17 but also the distance between the light transmission window 16 and the substrate 100 (the distance between the light transmission window 16 and the support 15), the width of the beam 17, the distance between the beam 17 and the beam 17, the shape of the reflector 14, etc. Are preferably set so that the irradiance is more uniform over the entire surface 100a of the substrate 100 (substantially the entire surface 15a of the support 15). In the light processing apparatus 10 of the present embodiment, in addition to the shape of the beam 17 as described above, the position of the support base 15 is set so that the distance between the light transmission window 16 and the substrate 100 is 5 mm. Yes. In this way, the light processing apparatus 10 is configured.

FIG. 6 is a diagram showing the relationship between the irradiance and the distance from the intersection P between the perpendicular line passing through the center C of the beam 17 and the surface to be processed 100a of the substrate 100. In FIG. In the vicinity of the intersection P (distance near ± 0 mm), as described above, usually, the shadow due to the beam 17 is likely to occur. However, in the light processing apparatus 10 of the present embodiment, 45 mW / cm ² in a region having a diameter of 100 mm. An irradiance of ˜49 mW / cm ² was obtained. As described above, in this optical processing apparatus 10, the processing target surface 100 a of the substrate 100 can be optically processed substantially uniformly regardless of whether it is a region facing the light transmission window 16 or a region facing the beam 17. Is possible.

  Next, an example of how to use the optical processing apparatus 10 will be described. In the present embodiment, a method of forming an oxide film on a silicon wafer by oxidizing the surface 100a to be processed of the silicon wafer as the substrate 100 with light will be described. Hereinafter, the substrate 100 is referred to as a silicon wafer. As the silicon wafer 100, for example, a disk-shaped P-conductivity type single crystal silicon wafer having a diameter of 6 inches and having a specific resistance of (100) plane of 10 to 20 Ωcm is used. Further, the processing surface 100a of the silicon wafer 100 is a (100) surface.

  First, prior to the light treatment, the silicon wafer 100 is cleaned in order to remove a natural oxide film and the like. That is, the silicon wafer 100 is cleaned with 1% hydrofluoric acid, and then pure cleaning and drying are performed. The silicon wafer 100 is placed on the support base 15 in the vacuum reaction chamber 11 so that the surface to be processed 100 a side ((100) surface side) of the silicon wafer 100 faces the upper side, that is, the light transmission window 16.

By the way, for oxidation, the reaction rate is determined by the reaction rate of silicon and oxygen, and the oxidized species diffuses in the oxide film and reaches the interface between the silicon oxide film (SiO ₂ film) and silicon (Si). There are two modes, “diffusion-limited”, in which the oxidation rate is determined by the rate at which it is performed. As the temperature of the silicon wafer 100 increases, the reaction rate between silicon and oxygen also increases. In particular, the rate at which oxidized species diffuse in the oxide film increases. For this reason, the oxidation rate is improved when the temperature of the silicon wafer 100 is increased. Considering the influence on the optical processing apparatus 10 and the silicon wafer 100, the substrate temperature during photo-oxidation is preferably in the range of 100 ° C. to 500 ° C. More preferably, the substrate temperature is 200 ° C. to 350 ° C. In this embodiment, the temperature is increased to, for example, 300 ° C. by the heating device 26 whose temperature has been increased, and the substrate temperature is maintained.

The vacuum reaction chamber 11 is evacuated to a vacuum degree of 2 × 10 ⁻⁴ Pa by the vacuum pump 23. Further, nitrogen is introduced into the lamp house 12 through the nitrogen gas circulation port 25. As described above, attenuation of irradiance of the xenon excimer lamp can be suppressed by substituting the inside of the lamp house 12 with nitrogen.

  Oxygen gas is introduced from the gas inlet 24 at 220 sccm, and the pressure in the vacuum reaction chamber 11 is maintained at 1200 Pa. Thereafter, the lamp 13a is turned on. Light emitted from the lamp 13 a passes through each light transmission window 16 and is irradiated into the vacuum reaction chamber 11.

As described above, since the energy of light emitted from the xenon excimer lamp as the lamp 13a has energy for decomposing oxygen molecules into oxygen atom active species, oxygen molecules are converted into oxygen atoms in the vacuum reaction chamber 11. Active species are generated. The generated oxygen atom active species oxidizes the processing surface 100a ((100) surface) of the silicon wafer 100, and a silicon oxide (SiO ₂ ) film is formed on the silicon wafer 100.

In the light processing apparatus 10 according to the present embodiment, light is irradiated from the lamp 13a through the light transmission window 16 into the vacuum reaction chamber 11 for 7 minutes, so that substantially the entire surface 100a of the silicon wafer 100 is processed. A SiO ₂ film having a thickness of 2.3 nm to 2.6 nm could be formed.

By the way, when a xenon excimer lamp is used as the lamp 13a, as shown in the following reaction formula (1), the oxygen atom active species O ( ¹ D) can be formed directly and efficiently from oxygen. The oxygen atom active species O ( ¹ D) oxidizes the surface 100a to be processed of the substrate 100. Thus, ozone is not involved in the reaction when a xenon excimer lamp is used.

O ₂ + hν → O ( ³ P) + O ( ¹ D) (reaction by light having a wavelength of 172 nm) (1)
O ( ³ P): Oxygen atom in ³ P level excited state O ( ¹ D): Oxygen atom in ¹ D level excited state h: Planck's constant ν: Frequency of light In addition, a low-pressure mercury lamp is used as the lamp 13a. It is also possible to use. The wavelength of light emitted from the low-pressure mercury lamp has two peaks of 185 nm and 254 nm. Therefore, in the case of a low-pressure mercury lamp, as shown in the following reaction formula (2), 185 nm light generates ozone from oxygen, and the ozone forms oxygen atom active species O ( ¹ D) with 254 nm light. That is, it is a two-step reaction.

O ₂ + O ( ³ P) + M → O ₃ + M (reaction by light having a wavelength of 185 nm) (2)
O ₃ + hν → O ( ¹ D) + O ₂ (reaction by light having a wavelength of 254 nm) (3)
M: Oxygen compound gas other than O ₂ , O ( ³ P), and O ₃ As described above, since the xenon excimer lamp is a one-stage reaction, the oxygen atom active species O ( ^{Since 1} D) can be formed, there is an advantage that the oxidation rate is high. The reaction of the reaction formula (1) occurs when light having a wavelength of 175 nm or less is used. Therefore, a lamp 13a that can emit light having a wavelength of 175 nm or less is used instead of a xenon excimer lamp. However, the same effect as when a xenon excimer lamp is used can be obtained.

  As described above, the light processing apparatus 10 according to the present embodiment includes the two light transmission windows 16 arranged side by side so as to constitute a part of the upper wall 11b of the vacuum reaction chamber 11, and from the lamp 13a. The emitted light is formed so as to be transmitted through the light transmission window 16 into the vacuum reaction chamber 11. Therefore, according to the light processing apparatus 10 of the present embodiment, the area of each light transmission window 16 is set to be smaller than the area of the processing target surface 100a of the substrate 100, that is, the thickness of the light transmission window 16 is compared with the conventional one. Can be set thinly. Therefore, the rate at which the light emitted from the lamp 13a is absorbed by the light transmission window 16 can be suppressed.

  Further, in the light processing apparatus 10 of the present embodiment, the light emitted from the lamp 13 a and transmitted through the two light transmission windows 16 is overlapped on the processing surface 100 a of the substrate 100 supported on the support base 15. Is formed. Accordingly, the light emitted from the lamp 13a can be satisfactorily irradiated to the entire surface to be processed 100a of the substrate 100 supported by the support base 15.

  Moreover, in the light processing apparatus 10 of the present embodiment, the light transmission window 16 is provided so as to close the opening 18 defined by the beam 17, and the light emitted from the lamp 13a is supported on the opening 18 by the support base. It is formed in a shape that widens toward the 15 side. In other words, the beam 17 sandwiched between the light transmission windows 16 is opposed to the support surface 15a of the support base 15, and its cross-sectional shape is tapered from the lamp 13a side toward the support base 15 side. Has been. By doing in this way, the light which permeate | transmitted each light transmission window 16 can be advanced so that it may spread as it goes to the support stand 15 side. Therefore, the light incident from each of the light transmission windows 16 can be satisfactorily superimposed on the surface to be processed 100a of the substrate 100 supported on the support base 15, so that the light emitted from the lamp 13a is reflected on the substrate 100. Irradiated uniformly by the surface to be processed 100a.

  In addition, light emitted from a xenon excimer lamp or a mercury lamp can decompose oxygen gas into oxygen atom active species. Therefore, when the oxide film 101 is formed on the substrate 100 by photooxidation, a xenon excimer lamp or a mercury lamp may be used as the lamp 13a.

  Furthermore, the light emitted from the xenon excimer lamp can generate oxygen atom active species from oxygen gas in a one-step reaction. Therefore, by using a xenon excimer lamp as the lamp 13a, the throughput of optical processing (formation of the oxide film 101) of the substrate 100 can be improved.

  In the present embodiment, the optical processing apparatus 10 that can be suitably used when photo-oxidizing the substrate 100 has been described as an example. However, the optical processing apparatus of the present invention uses optical CVD, optical ashing, optical cleaning, The present invention can also be applied to an optical processing apparatus that performs photoetching or photoepitaxial.

  Further, in the present embodiment, the operation has been described by taking as an example the case where the silicon wafer 100 is photooxidized using the optical processing apparatus 10, but the optical processing apparatus 10 of the present embodiment is, for example, single crystal silicon, polycrystalline In addition to a silicon wafer made of silicon, microcrystalline silicon, amorphous silicon, or the like, a single crystal silicon layer, a polycrystalline silicon layer, a microcrystalline silicon layer, or an amorphous silicon layer is formed on a substrate made of a material other than silicon alone such as glass. Those formed with a silicon layer can also be photooxidized.

In the present embodiment, the operation has been described by taking as an example the case where the optical processing apparatus 10 is used to photooxidize a relatively small substrate 100 having a diameter of 6 inches. However, the optical processing apparatus of the present invention has the light transmission window 16. Since it is not necessary to set the size of the substrate to be larger than the size of the substrate 100, for example, it is also suitable when forming an insulating film (an oxide film such as a SiO ₂ film) on a large substrate used in a large liquid crystal display device or the like. Can be used.

  Hereinafter, a second embodiment of the present invention will be described with reference to FIG. In this embodiment, an embodiment of the processing apparatus of the present invention will be described.

  As shown in FIG. 7, the processing apparatus 200 includes an optical processing apparatus 10, a film forming apparatus 30, and a communication mechanism 40. The communication mechanism 40 includes a transfer chamber 50, a first gate valve 51, a second gate valve 52, and the like.

  As the optical processing apparatus 10, for example, the optical processing apparatus 10 described in the first embodiment can be employed. Hereinafter, the vacuum reaction chamber 11 is referred to as a first vacuum reaction chamber 11. In addition, the same description is attached | subjected to a figure and it abbreviate | omits.

The film forming apparatus 30 is an apparatus for forming an insulating film 102, for example, a silicon oxide (SiO ₂ ) film on the substrate 100. As such a film forming apparatus 30, for example, an existing parallel plate type plasma enhanced chemical vapor deposition (CVD) apparatus can be applied.

  A vacuum reaction chamber (hereinafter referred to as a second vacuum reaction chamber) included in the film forming apparatus 30 is an airtight container, and connects the bottom wall 31a, the upper wall 31b, and the periphery of the bottom wall 31a and the periphery of the upper wall 31b. A peripheral wall 31c is provided. These walls 31a, 31b, and 31c are set to have such strength that the inside of the vacuum reaction chamber 11 can be depressurized to a vacuum state. As a material for forming the bottom wall 11a, the top wall 11b, and the side wall 11c, for example, aluminum can be used. The second vacuum reaction chamber 31 can change the atmospheric pressure (become a vacuum atmosphere or atmospheric pressure) separately from the first vacuum reaction chamber 11 provided in the light processing apparatus 10.

A gas inlet 32 and a gas outlet 33 are provided in the second vacuum reaction chamber 31. The inside of the second vacuum reaction chamber 31 is connected to a silicon compound gas cylinder and an oxygen gas cylinder (not shown) via a gas inlet 32. As the silicon compound gas, for example, TEOS (tetraethoxysilane (Si (OCH ₂ CH ₃ ) ₄ ) gas, etc.) can be used, and the inside of the second vacuum reaction chamber 31 is connected via a gas discharge port 33. Thus, the gas in the second vacuum reaction chamber 31 is driven to the outside of the second vacuum reaction chamber 31 via the gas discharge port 33 by driving the vacuum pump 34. Can be exhausted.

  Further, although not shown, the second vacuum reaction chamber 31 is provided with a high frequency power supply device and a matching unit for generating plasma. The high frequency power supply device is electrically connected to one electrode 35 of a pair of electrodes 35 and 36 that correspond to each other via a matching unit that adjusts a load. The other electrode 36 is used as an electrode for generating plasma and is grounded.

  A support base for supporting the substrate 100 is provided in the second vacuum reaction chamber 31. In this embodiment, the other electrode 36 also serves as a support. The support base (electrode) 36 is provided with a heating device 37 for heating the substrate 100, for example, a heater or lamp annealing.

  The film forming apparatus 30 is configured to generate a plasma in the second vacuum reaction chamber 31 by operating a high-frequency power supply device and supplying high-frequency power to one electrode via a matching unit. .

  A transfer chamber 50 is provided between the light processing apparatus 10 and the film forming apparatus 30. The transfer chamber 50 includes a bottom wall 50a, an upper wall 50b, a peripheral wall 50c that connects the periphery of the bottom wall 50a and the periphery of the upper wall 50b, and the like. A support base 53 for supporting the substrate 100 is provided inside the transfer chamber 50. The inside of the transfer chamber 50 is communicated with the inside of the first vacuum reaction chamber 11 of the light processing apparatus 10 through a first gate valve 51 that can be opened and closed. The interior of the transfer chamber 50 is communicated with the interior of the second vacuum reaction chamber 31 of the film forming apparatus 30 through a second gate valve 52 that can be opened and closed. The inside of the transfer chamber 50 can be maintained at a predetermined pressure by an inert gas such as nitrogen gas or argon gas.

  Although not shown, the processing apparatus 200 moves the substrate 100 from the support base 15 included in the optical processing apparatus 10 to the support base 53 included in the transfer chamber 50 and forms a film from the support base 53 included in the transfer chamber 50. A moving mechanism capable of moving the substrate 100 is provided on a support base 36 that also serves as an electrode of the apparatus 30. In this way, the processing apparatus 200 is configured.

  Next, an example of how to use the processing apparatus 200 will be described. In the present embodiment, a first insulating film (photo-oxide film) 101 is formed on the silicon wafer by photo-oxidizing the surface 100a of the silicon wafer as the substrate 100 by the optical processing apparatus 10, A method for forming the second insulating film (PE-CVD film) 102 on the first insulating film 101 by the film forming apparatus 30 will be described. Hereinafter, the substrate 100 is referred to as a silicon wafer. As the silicon wafer 100, for example, a disk-shaped P-conductivity type single crystal silicon wafer having a diameter of 6 inches and having a specific resistance of (100) plane of 10 to 20 Ωcm is used. The treated surface 100a of the silicon wafer 100 is a (100) surface.

  First, prior to optical processing, the silicon wafer 100 is cleaned. This can be performed in the same manner as in the first embodiment.

  The silicon wafer 100 is placed on the support base 15 in the first vacuum reaction chamber 11 so that the (100) surface side of the silicon wafer 100 faces the upper side, that is, the light transmission window 16, and the silicon wafer 100 is processed. The surface 100a ((100) surface) is photooxidized. As a result, the first insulating film 101 is formed on the silicon wafer 100. Note that the formation of the first insulating film 101 can be performed in the same manner as in the first embodiment. During photooxidation, the first gate valve 51 is closed.

  A purge gas is introduced into the first vacuum reaction chamber 11. The first gate valve 51 is opened while the atmospheric pressure in the first vacuum reaction chamber 11 is higher than the atmospheric pressure in the transfer chamber 50. The silicon wafer 100 disposed on the support base 15 provided in the first vacuum reaction chamber 11 is moved onto the support base 53 provided in the transfer chamber 50. As described above, the silicon wafer 100 is moved in a state where the pressure in the first vacuum reaction chamber 11 is more positive than the pressure in the transfer chamber 50, so that the first vacuum reaction chamber 11 and the second vacuum are moved. Cross contact with the inside of the reaction chamber 31 can be suppressed.

  A purge gas is introduced into the first vacuum reaction chamber 11. The second gate valve 52 is opened while the atmospheric pressure in the second vacuum reaction chamber 31 is higher than the atmospheric pressure in the transfer chamber 50. The silicon wafer 100 disposed on the support base 53 in the transfer chamber 50 is moved onto the support base 36 that also serves as an electrode in the second vacuum reaction chamber 31. As described above, the silicon wafer 100 is moved in a state in which the pressure in the second vacuum reaction chamber 31 is set to be more positive than the pressure in the transfer chamber 50, so that the first vacuum reaction chamber 11 and the second vacuum are moved. Cross contact with the inside of the reaction chamber 31 can be suppressed.

The vacuum pump 34 is driven, and the inside of the second vacuum reaction chamber 31 is substantially evacuated. After the inside of the second vacuum reaction chamber 31 is evacuated, TEOS gas is introduced into the second vacuum reaction chamber 31 at a flow rate of 5 sccm and oxygen gas is introduced at a flow rate of 750 sccm, and the internal pressure is maintained at 230 Pa. The substrate temperature of the silicon wafer 100 is kept at 300 ° C. by the heating device 37. A high-frequency power supply device is operated, and high-frequency power is supplied to one electrode through a matching unit. O ₂ gas and TEOS gas are decomposed by plasma, and silicon oxide (SiO ₂ ) molecules are deposited on the (100) surface of the silicon wafer 100 to form the second insulating film 102 made of silicon oxide (FIG. 8). reference). Thus, the substrate processing is completed.

  The characteristics of the silicon wafer 100 on which the oxide film was formed using the processing apparatus 200 of this embodiment were verified as follows.

A first insulating film (SiO ₂ film, hereinafter referred to as a photo-oxidized film) 101 is formed on the (100) surface of the silicon wafer 100 by the optical processing apparatus 10, and the oxide film is continuously formed without breaking the vacuum. A second insulating film (SiO ₂ film, hereinafter referred to as a PE-CVD film) 102 was formed thereon so as to have a film thickness of 40 nm. Further, an aluminum film was formed on the PE-CVD film 102 by vapor deposition to form a circular electrode (not shown) having a diameter of 1 mm. Furthermore, PMA (Post Metallization Anneal) treatment was performed at 350 ° C. for 1 hour in a nitrogen atmosphere to form a MOS (Metal Oxide Semiconductor) element.

FIG. 9 shows the result of measuring the relationship between the photo-oxide film 101 and the interface state density. As shown in FIG. 9, it was found that the MOS element in which the photo-oxide film 101 is formed to have a thickness of about 1 nm or more can obtain an interface state density of about 3 × 10 ¹⁰ cm ⁻² eV ⁻¹ . This value is an interface state density equivalent to a SiO ₂ film (thermal oxide film) formed by thermally oxidizing the (100) surface of the silicon wafer 100. That is, an excellent oxide film / silicon interface can be obtained by forming an insulating film (a laminated film of the first insulating film 101 and the second insulating film 102) on the silicon wafer 100 using the processing apparatus 200. I found out that

  As described above, the processing apparatus 200 according to this embodiment includes the optical processing apparatus 10 as described in the first embodiment. Therefore, in the portion of the light processing apparatus 10, the same effect as that of the first embodiment can be obtained.

  In addition, the processing apparatus 200 according to the present embodiment includes a communication mechanism 40 (a transfer chamber 50, a first gate valve 51, and a second gate valve) that allows the optical processing apparatus 10 and the film forming apparatus 30 to open and close. 52). That is, the processing apparatus 200 of this embodiment is an inline system in which the optical processing apparatus 10 and the plasma CVD apparatus are connected via the communication mechanism 40. Therefore, the footprint can be improved. In addition, according to the processing apparatus 200, it is possible to continuously perform the film forming process on the substrate 100 that has been optically processed by the optical processing apparatus 10. In addition, at this time, the substrate 100 is not exposed to the air. Therefore, by using this processing apparatus 200, an oxide film can be formed on the silicon wafer 100 with a good oxide film / silicon interface.

  By using this processing apparatus 200, an oxide film is formed not only on single crystal silicon but also on polycrystalline silicon, microcrystalline silicon, amorphous silicon or the like formed by laser crystallization, solid phase crystallization, or the like. be able to. In addition to a silicon wafer or the like, an oxide film can be formed on a glass substrate, a quartz glass substrate, a ceramic substrate, a resin substrate, or the like in which silicon is stacked. Further, by using this processing apparatus 200, a circuit element having a portion in which silicon and silicon oxide are laminated or a part of the circuit element is formed on a glass substrate, a quartz glass substrate, a ceramic substrate, or a resin substrate. Even if it is a thing, an oxide can be formed on a silicon | silicone.

In addition, since the processing apparatus 200 of the present invention does not need to set the size of the light transmission window 16 to be larger than the size of the substrate 100, for example, an insulating film (SiO 2) is formed on a large substrate used in a large liquid crystal display device or the like. It can also be suitably used when forming an oxide film such as _two films.

  Hereinafter, a third embodiment of the present invention will be described with reference to FIG. In this embodiment, another embodiment of the processing apparatus of the present invention will be described.

  The processing apparatus 300 according to this embodiment includes a first optical processing apparatus 301, a second optical processing apparatus 302, a common chamber 303, a substrate transfer chamber 304, and first to third load locks 305, 306, and 307. It has. The common chamber 303, the first load lock 305, and the second load lock 306 constitute a communication mechanism that allows the first light processing device 301 and the second light processing device 302 to open and close freely. Yes.

  Specifically, the rectangular substrate transfer chamber 304 is formed of an airtight container, and sequentially transfers the substrates stored in the cassette to the common chamber 303 and sequentially receives the processed substrates. The common chamber 303 is formed of an airtight container, and is airtightly connected to the substrate transfer chamber 304 via the third load lock 307. The common chamber 303 transports the substrate transported from the substrate transport chamber 304 to the first optical processing device 301 according to a predetermined program, and receives the substrate processed by the first optical processing device 301. Then, it is conveyed to the second light processing apparatus 302. Then, the substrate processed by the second optical processing apparatus 302 is received and returned to the substrate transfer chamber 304.

  As the first and second light processing devices 301 and 302, the light processing device 10 described in the first embodiment can be employed. The light processing chamber of the first light processing apparatus 301 is formed of an airtight container and is airtightly connected to the common chamber 303 via the first load lock 305. The light processing chamber of the second light processing device 302 is formed of an airtight container and is airtightly connected to the common chamber 303 via the second load lock 306.

  In the processing apparatus 300, the substrate is processed as follows in accordance with a predetermined program.

  The substrates stored in the cassette are transferred sequentially from the substrate transfer chamber 304 to the common chamber 303. The substrate transferred to the common chamber 303 is transferred to the first optical processing apparatus 301 and subjected to optical processing. The substrate subjected to the optical processing in the first optical processing apparatus 301 is transferred to the second optical processing apparatus 302 through the common chamber 303 and subjected to optical processing. After the substrates that have been optically processed by the first and second optical processing apparatuses 301 and 302 are taken out, the next substrate is transferred to the common chamber 303 and processed in the same manner. The substrates subjected to the optical processing by the first and second optical processing apparatuses 301 and 302 are returned to the substrate transfer chamber 304 through the common chamber 303 and stored in the cassette. Thus, the substrate processing is completed.

  As described above, the processing apparatus 300 of this embodiment includes the optical processing apparatuses 301 and 302 as described in the first embodiment. Therefore, the same effects as those of the first embodiment can be obtained in the portions of the optical processing devices 301 and 302.

  In the processing apparatus 300 according to the present embodiment, the first optical processing apparatus 301 and the second optical processing apparatus 302 are communicated with each other so as to be freely opened and closed. Therefore, the second light processing device 302 can continuously perform the second light processing without exposing the substrate subjected to the first light processing by the first light processing device 301 to the air.

  In the light processing device 10 of the first embodiment and the light processing device 10 included in the processing device 200 of the second embodiment, and the light processing devices 301 and 302 included in the processing device of the third embodiment, lamps are used. The number of 13a is arbitrary, but the photooxidation rate can be increased as the number increases. Therefore, the number of the lamps 13a may be determined so that a desired throughput can be obtained.

  In the light processing apparatus and the processing apparatus of the present invention, the number of lamps provided in the light source is arbitrary as long as it is 1 or more.

Sectional drawing which shows one Embodiment of the optical processing apparatus which concerns on the 1st Embodiment of this invention. The top view which shows an example of the upper wall of the vacuum reaction chamber with which the optical processing apparatus of FIG. 1 is provided. The top view which shows another example of the upper wall of the vacuum reaction chamber with which the optical processing apparatus of FIG. 1 is provided. The top view which shows another example of the upper wall of the vacuum reaction chamber with which the optical processing apparatus of FIG. 1 is provided. The figure which shows typically the irradiation state of the light in the optical processing apparatus of FIG. The figure which shows the relationship between the distance from the intersection of the perpendicular which passes along the center of a beam, and the to-be-processed surface of a board | substrate, and the irradiance of the light from a light source in the optical processing apparatus of FIG. Sectional drawing which shows the processing apparatus which concerns on the 2nd Embodiment of this invention. Sectional drawing which shows the board | substrate after processing with the processing apparatus of FIG. The figure which shows the relationship between the photo-oxidation film thickness of a board | substrate processed with the processing apparatus of FIG. 7, and an interface state density. The figure which shows typically the processing apparatus which concerns on the 3rd Embodiment of this invention. The figure which shows the wavelength dependence of the light transmittance with respect to a synthetic quartz board.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... Optical processing apparatus, 11 ... Vacuum reaction chamber (processing container), 13 ... Light source, 15 ... Support stand, 30 ... Film-forming apparatus, 40 ... Communication mechanism, 100 ... Substrate, 100a ... Surface to be processed, 200, 300 ... Processing equipment

Claims (5)

An optical processing apparatus for optically processing a surface to be processed of a substrate,
A processing vessel;
A light source provided outside the processing container;
At least two light transmission windows provided side by side so as to constitute a part of the wall of the processing container, and transmitting the light emitted from the light source to the inside of the processing container;
Provided inside the processing vessel in a state of being opposed to the light transmission window, and a support base for supporting the substrate;
An optical processing apparatus, comprising a beam that is provided so as to constitute a part of a wall of the processing container and that has a cross-sectional shape that supports the light transmission window in a direction of the support base.   The light transmission window is provided so as to close an opening defined by the beam, and light emitted from the light source enters the processing container through the light transmission window, and the support The optical processing apparatus according to claim 1, wherein the optical processing apparatus has a shape spreading toward the plate side.   The light processing apparatus according to claim 1, wherein the light source is a xenon excimer lamp or a mercury lamp. s   4. The optical processing apparatus according to claim 1, wherein the processing surface of the substrate is optically processed, a film forming apparatus that forms a film on the processing surface of the substrate, the optical processing device, and the composition. A processing apparatus comprising: a communication mechanism that opens and closes communication with a membrane device. A first optical processing apparatus that performs optical processing on a target surface of the substrate; a second optical processing apparatus that further performs optical processing on the target surface of the substrate; the first optical processing apparatus; and the second optical processing apparatus. And a communication mechanism for opening and closing communication with the light processing device,
4. The processing apparatus according to claim 1, wherein each of the first and second optical processing apparatuses is the optical processing apparatus according to claim 1.

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