JP4295490B2 - Processing device, chiller control method and chiller control device for processing device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method and an apparatus for controlling a chiller used for temperature control of a processing apparatus, and more particularly to an energy saving technique for efficiently saving energy consumed by the chiller.
[0002]
[Prior art]
As a typical example of a processing apparatus using a chiller, there is a plasma processing apparatus widely used for processes such as etching, deposition, oxidation, and sputtering in a manufacturing process of a semiconductor device or an FPD (Flat Panel Display). In a plasma processing apparatus, one or a pair of electrodes for plasma generation or ion drawing are arranged in a reaction vessel or chamber, and high-frequency power is applied to the electrodes. Usually, an electrode disposed upward in the center of the chamber also serves as a mounting table or susceptor on which a substrate to be processed (semiconductor wafer, glass substrate, etc.) is mounted. Since such a susceptor electrode is in direct contact with the substrate, the temperature of the electrode directly affects the temperature of the substrate, that is, the processing temperature. Therefore, a refrigerant chamber is provided in the susceptor electrode or a conductive support member integrally coupled thereto, and a liquid or gaseous refrigerant having a predetermined temperature is circulated and supplied to the refrigerant chamber from an external chiller unit. The temperature is controlled (for example, Patent Document 1).
[0003]
[Patent Literature]
JP 2001-44176 A (page 4, FIG. 1)
[0004]
[Problems to be solved by the invention]
However, conventionally, the coolant is always constant from the chiller to the processing apparatus regardless of whether the processing apparatus is normally operating to process the substrate or in an idle state (resting state). (I.e., a flow rate for maintaining the temperature of the susceptor electrode or the substrate at a set temperature). For this reason, useless energy was consumed by the chiller. In general, a long idle state in a processing apparatus occurs at a break between lots. However, in a low-volume, multi-product type production line that has been widespread in recent years, an indefinitely long time (sometimes several tens of minutes or more) even in units of substrates, that is, between single-wafer processing. ) May continue to be idle, and chiller energy consumption can no longer be ignored.
[0005]
  The present invention has been made in view of the problems of the prior art, andapparatusThe refrigerant supply operation of the chiller is appropriately adjusted according to the operating conditions ofControl and effective energy savingRealizeProcessing equipment andChiller control method for processing equipmentas well asAn object is to provide a chiller control device.
[0006]
[Means for Solving the Problems]
  In order to achieve the above object, a chiller control method for a processing apparatus of the present invention is a chiller control method for supplying a temperature control liquid refrigerant to a processing apparatus for performing a predetermined process on a substrate to be processed. A first step of supplying the liquid refrigerant at a first flow rate from the chiller to the processing device during a period in which the processing device is normally operated for the processing; A second step of detecting that the engine is in an idle state for a predetermined threshold time or more based on recipe information in the process sequence; and after the processing device is switched from the normal operation state to the idle state, A third step of suppressing the flow rate from the first flow rate to a second flow rate smaller than the first flow rate, and when the timing at which the processing apparatus returns to the normal operation state after the idle state is undecided , In the idle stateAboveWhen a start time of a flow rate return operation for returning the flow rate of the liquid refrigerant from the second flow rate to the first flow rate is determined based on recipe information on a process sequence, and the processing apparatus is in the idle state InIdle period can be calculatedIn the case when the idle stateBy timer functionThe start time of the flow return operationSettingThe fourth step to be performed and the fourth step to be determinedOr settingA fifth step of starting the flow rate return operation at the start time and returning the flow rate of the liquid refrigerant to the first flow rate before the processing device returns from the idle state to the normal operation state. Have.
  In the present invention, the normal operation state is a state that is not an idle state for a predetermined threshold time or more, and normally, a predetermined processing is performed on a substrate to be processed in a processing container. And a standby state in which processing can be executed on this substrate as soon as the next substrate is introduced into the processing container.
[0007]
  The chiller control device of the present invention is a chiller control device for supplying a temperature control liquid refrigerant to a processing device for performing a predetermined process on a substrate to be processed via a refrigerant circulation path. Refrigerant flow rate adjusting means for adjusting the flow rate of the liquid refrigerant supplied from the chiller to the processing device, and recipe information on the process sequence that the processing device is in an idle state for a predetermined threshold time or more. And a first flow rate detecting unit that detects the flow rate of the refrigerant and adjusts the refrigerant flow rate adjusting unit after the processing device is switched from the normal operation state to the idle state in accordance with a detection result by the first sequence detection unit. The flow rate of the liquid refrigerant is suppressed from a first flow rate in a normal operation state to a second flow rate smaller than the first flow rate, and the processing apparatus includes the processing device. If the timing to return after becoming idle state to the normal operating state of the undecided, in the idle stateAboveWhen a start time of a flow rate return operation for returning the flow rate of the liquid refrigerant from the second flow rate to the first flow rate is determined based on recipe information on a process sequence, and the processing apparatus is in the idle state InIdle period can be calculatedIn the case when the idle stateBy timer functionThe start time of the flow return operationSettingDetermined by the flow return operation start time determining means and the flow return operation start time determining meansOr settingA refrigerant flow rate return means for starting the flow rate return operation at the started time and returning the flow rate of the liquid refrigerant to the first flow rate before the processing device returns from the idle state to the normal operation state; Have
[0008]
  In the present invention, in the second step (by the first sequence detecting means), it is caught (detected) from prefetching based on the recipe information on the process sequence that the processing apparatus is in an idle state for a predetermined time or more. In this step, the flow rate of the liquid refrigerant supplied from the chiller unit to the processing device (by the refrigerant flow rate suppressing means and the refrigerant flow rate adjusting means) is changed from the first flow rate in the normal operation state to the second flow rate smaller than that. Suppress. In the fourth step (by the flow return operation start time determining means), if the timing for returning to the normal operation state after the processing device is in the idle state is undecided,the aboveWhen the start time of the flow rate return operation for returning the flow rate of the liquid refrigerant from the second flow rate to the first flow rate is determined based on the recipe information on the process sequence, and the processing apparatus is in an idle stateIdle period can be calculatedIn the case when the idle stateBy timer functionThe start time of the flow return operationSettingTo do. In the fifth step (by the refrigerant flow rate return means), the flow rate return operation is started at the start time, and the flow rate of the liquid refrigerant is changed to the first flow rate before the processing device returns from the idle state to the normal operation state. Return to. In this way, the flow rate of the liquid refrigerant can be suppressed during an appropriate period in the idle state, and the energy saving of the chiller according to the operation status of the processing apparatus can be realized.
[0009]
  In the present invention, in order to achieve efficient energy saving of the chiller, preferably, the threshold value is set in the chiller.LiquidChange the flow rate of the refrigerant from the first flow rate to the second flow rate.returnFrom the first time and the second flow rate required for thereturnIt is preferable to set the time longer than the total time of the second time required for the above. In that case, in the fourth step (flow rate return operation start time determination means), the processing apparatus is in a normal operation state.From the time corresponding to the return timingTime before the second timeIt is preferable to set the start time of the flow rate return operation.
[0010]
  Further, the processing apparatus of the present invention includes a process chamber capable of depressurizing that accommodates a substrate to be processed, a temperature adjusting refrigerant passage provided in the process chamber, and a refrigerant passage in the process chamber.LiquidIt has a chiller for supplying refrigerant and a chiller control device of the present invention for controlling the chiller. In the configuration of such a processing apparatus, by providing the chiller control device of the present invention, significant energy saving of the chiller can be realized.
  As a preferable aspect of the processing apparatus of the present invention, a mounting table for mounting a substrate is provided in the process chamber, and a temperature adjusting refrigerant passage is formed in the mounting table. Further, a shower head that discharges process gas from a number of gas discharge ports toward the substrate on the mounting table may be provided in the process chamber, and a temperature control refrigerant passage is formed in the shower head. May be. Moreover, in order to generate the plasma of the process gas discharged from a shower head, you may provide the high frequency electric power feeding part which applies a high frequency between a mounting base and a shower head. From the viewpoint of energy saving, it is also preferable to keep the inside of the process chamber in a reduced pressure state during an idle state.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.
[0012]
FIG. 1 shows a configuration example of a processing system to which the chiller control method or apparatus of the present invention can be applied. The processing system includes a processing device 10, a chiller unit 12, a controller 14, and a host computer 16.
[0013]
The processing apparatus 10 is a plasma etching apparatus, for example, and has a process chamber 18 that can be sealed. A lower electrode 20 that also serves as a mounting table (susceptor) for mounting a substrate to be processed (for example, a semiconductor wafer) W is disposed in the center of the process chamber 18.
[0014]
The lower electrode 20 is made of, for example, an aluminum plate block, and an annular refrigerant chamber 22 extending in the circumferential direction, for example, is formed in the plate block. The refrigerant chamber 22 is connected to a refrigerant supply pipe 24 and a refrigerant recovery pipe 26 that constitute a refrigerant circulation path. As will be described later, the temperature-controlled refrigerant from the chiller unit 12 is circulated and supplied to the refrigerant chamber 22 via the refrigerant supply pipe 24 and the refrigerant recovery pipe 26.
[0015]
In the process chamber 18, an upper electrode 28 is disposed above the lower electrode 20 so as to face the electrode in parallel. The upper electrode 28 is formed with a number of through holes or gas discharge ports 28a for constituting a shower head. A gas supply pipe 34 from a processing gas supply source 32 is connected to the gas inlet 30 provided behind the upper electrode 28. In the middle of the gas supply pipe 34, a flow rate regulator (MFC) 36 and an on-off valve 38 are provided.
[0016]
The upper electrode 28 is connected (grounded) to the ground potential via the process chamber 18. On the other hand, a high frequency power source 42 is electrically connected to the lower electrode 20 via a matching unit 40. The lower electrode 20 is electrically insulated from the process chamber 18 by an insulating material 44.
[0017]
An exhaust port 46 is provided at the bottom of the process chamber 18, and an exhaust device such as a vacuum pump (not shown) is connected to the exhaust port 46 via an exhaust pipe 48. A substrate loading / unloading port (not shown) is provided on the side surface of the process chamber 18, and a load lock chamber (not shown) is connected to the substrate loading / unloading port via a gate valve (not shown).
[0018]
In this etching apparatus, in order to perform the etching process, the substrate W is loaded into the process chamber 18 and placed on the lower electrode 20, and an etching gas is supplied from the processing gas supply source 32 into the chamber 18 at a predetermined flow rate. Introduced and evacuated by an exhaust device, the pressure in the chamber 18 is set to a set value. Further, a high frequency of 13.56 MHz, for example, is applied from the high frequency power source 42 to the lower electrode 20 with a predetermined power. Then, the etching gas discharged from the shower head 28a of the upper electrode 28 is turned into plasma in the glow discharge between the electrodes, and the surface to be processed of the substrate W is etched by radicals and ions generated by this plasma. In such an etching process, the controller 14 performs on / off control of the etching gas supply (on / off control of the on-off valve 38) and on / off control of the high frequency power (on / off control of the high frequency power supply 42). Good.
[0019]
The chiller unit 12 includes a refrigerant tank 50 for storing a liquid refrigerant (for example, cooling water or brine) CW1, and a cooler 52 for adjusting the temperature of the refrigerant CW1. The refrigerant tank 50 is provided with a heater 54 for heating the refrigerant CW1 in the tank and a pump 56 for sending the refrigerant CW1 to the refrigerant supply pipe 24. The pump 56 is driven and controlled by an inverter 58, and discharges the refrigerant CW1 in the tank 50 at a desired pressure or flow rate. The controller 14 can control the output of the pump 56, that is, the discharge flow rate through the inverter 58.
[0020]
The cooler 52 cools the refrigerant CW1 sent from the refrigerant recovery pipe 26 to a predetermined temperature and then returns the refrigerant CW1 to the refrigerant tank 50 and the second refrigerant CW2 having a temperature lower than that of the refrigerant CW1 to the outside. A second heat exchanger 62 supplied from a refrigerant supply means (not shown), and a third refrigerant CW3 for transferring heat between the first heat exchanger 60 and the second heat exchanger 62. And a refrigerant circulation path 64 for circulation. The refrigerant circulation path 64 is provided with a circulation pump 68 that is driven and controlled by an inverter 66.
[0021]
  The controller 14 can control the output of the pump 68, that is, the circulation speed of the third refrigerant CW3 through the inverter 66 in order to adjust the refrigerant CW1 in the refrigerant tank 50 to a desired temperature. It is also possible to provide a temperature sensor (not shown) for detecting the temperature of the refrigerant CW1 in the refrigerant tank 50, the refrigerant supply pipe 24 or the refrigerant recovery pipe 26, and to adjust the temperature of the refrigerant CW1 by feedback control. Further, a flow rate sensor (not shown) is provided in the refrigerant circulation path (24, 26), and the flow rate of the refrigerant CW1.AdjustmentCan also be performed by feedback control.
[0022]
The host computer 16 controls the entire processing system to which the etching apparatus 10 belongs. The host computer 16 can control the operation of the etching apparatus 10 and its peripheral devices (particularly the chiller unit 12) through the controller 14 and can also control other operations in the system. Necessary control can be performed on each of the processing device, the transport device, and the like via each controller.
[0023]
In order to control the operation of each apparatus, the host computer 16 manages the recipe information on the process sequence for each substrate W to be processed by a look-ahead method (pre-reading method), and appropriately sends a signal indicating a required operation or event. To the controller of the device. The host computer 16 can be notified of the operation status of each device, the process status of the substrate W currently handled, and the like from each device side through the controller. The host computer 16 can grasp the current position of each substrate W in the system, and can update the current position information in the process recipe information at any time.
[0024]
Next, the operation of this embodiment will be described with reference to FIGS. FIG. 2 is a flowchart showing a sequence of chiller control. FIG. 3 is a time chart showing temporal characteristics of chiller power consumption.
[0025]
  While the etching apparatus 10 is normally operating for the etching process, the chiller unit 12 operates in the normal mode (step S1). In this normal mode, under the control of the controller 14, the refrigerant CW1 whose temperature is adjusted to a predetermined temperature from the chiller unit 12 to the cooling chamber 22 of the lower electrode 20 via the refrigerant circulation path (24, 26) is used for the normal mode. Circulatingly supplied at a flow rate of N1 (for example, 25 liters / minute). In the chiller unit 12, the pump 56 of the refrigerant tank 50 operates at a considerably high output in order to secure the first flow rate N1, and the pump of the cooler 5268Also, the refrigerant CW1 operates at a relatively high output in order to heat-exchange or cool the refrigerant CW1 at high speed, and relatively high power P1 (for example, 3.31 kW) is consumed by the pumps 56 and 68 and the inverters 58 and 66 as a whole.
[0026]
The state in which the etching apparatus 10 is normally operated for the etching process, that is, the “normal operation state” means that the plasma etching process is being performed on the substrate W on the lower electrode 20 in the process chamber 18. Of course, there is also a standby state in which the substrate loading / unloading operation state before and after the plasma etching process is included, and further, when the next substrate W is introduced into the chamber 18, the plasma processing can be immediately performed on the substrate W. May include. Therefore, as long as the etching apparatus 10 is in the standby state even when the substrate W does not exist in the process chamber 18, the on-off valve 38 of the processing gas supply pipe 34 is closed, and the high-frequency power source 42 is off, the chiller Unit 12 continues to operate in the normal mode as described above.
[0027]
Now, as a result of the host computer 16 pre-reading recipe information on the process sequence for each substrate W while the etching apparatus 10 is in a normal operation state, the etching apparatus 10 is in a resting state for a predetermined threshold time Ts or more. That is, it is assumed that the idling state is detected or determined in advance (step S2). Here, the “idle state” is a state in which it takes a while until the next substrate to be processed W is introduced into the processing apparatus, and only when the next substrate introduction time or timing is fixed. Not including the case where it is not yet decided. The “threshold time Ts” is set to a value that takes into account the time (T1, T2) required for the refrigerant flow rate switching operation in the chiller unit 12, as will be described later.
[0028]
In this embodiment, as described above, when the host computer 16 catches or detects in advance an idle state longer than the threshold time Ts of the etching apparatus 10 by prefetching recipe information, the controller 14 responds to a notification from the host computer 16. Transmits a signal for instructing the energy saving mode to the chiller unit 12 (step S3, time t1).
[0029]
When the energy saving mode instruction signal is output in this way, the chiller unit 12 changes the flow rate of the refrigerant CW1 supplied to the etching apparatus 10 from the first flow rate N1 for the normal mode to the second flow rate N2 for the energy saving mode (for example, 15 liters / liter). Minutes) (step S3, time point t2). In the configuration example of FIG. 1, the controller 14 directly controls the inverter 58 to lower the output of the pump 56 to a set value. The time T1 required for the flow rate switching for suppressing the flow rate is the output characteristics of the pump 56, the characteristics of the refrigerant CW1 (specific gravity, etc.), the flow rate variation (N1 → N2), and the fluid in the refrigerant circuit (24, 22, 26). It depends on the capacity, conductance, etc., and is usually about 1-2 minutes.
[0030]
Further, while the etching apparatus 10 is in an idle state, the temperature of the refrigerant CW1 that is routed from the etching apparatus 10 via the refrigerant recovery pipe 26 does not increase so much. The cooling capacity can also be lowered.
[0031]
Thus, during the energy saving mode, each part in the chiller unit 12 operates at a low output, and in particular, the refrigerant CW1 in the refrigerant tank 50 has only to be supplied to the etching apparatus 10 at the suppressed flow rate N2, so that the pump 56 and the inverter 58 are normally operated. The load is lighter than that in the mode and the operation is performed at a considerably low output, and the power consumption of the pumps 56 and 68 and the inverters 58 and 66 is lowered to a considerably low level P2 (eg 2.26 kW).
[0032]
Even if the flow rate of the refrigerant CW1 supplied to the etching apparatus 10 is suppressed by such an energy saving mode of the chiller unit 12, the temperature of the lower electrode 20 in the apparatus 10 can be maintained at a temperature substantially equal to that in the normal operation state. it can. That is, during normal operation, particularly during processing, the lower electrode 20 itself not only generates heat by high-frequency current but also receives heat from the plasma, so that the refrigerant CW1 is supplied to the cooling chamber 22 of the lower electrode 20 at a relatively large first flow rate N1. It is necessary to increase the cooling rate by circulating and supplying. However, under the idle state, there is no heat generation from the lower electrode 20 itself or heat input from the plasma, so even if the cooling rate is lowered, and therefore the flow rate of the refrigerant CW1 is suppressed, the temperature of the lower electrode 20 is reduced. Can be maintained near the set temperature. In other words, the flow rate N2 of the refrigerant CW1 in the energy saving mode is preferably selected so that the temperature of the lower electrode 20 is maintained in the vicinity of the electrode temperature set value when the normal operation state is maintained.
[0033]
In order to maintain the temperature of the lower electrode 20 in the vicinity of the set temperature during the energy saving mode, it is preferable to keep the inside of the process chamber 18 in a vacuum. That is, by placing the lower electrode 20 in the vacuum space, the heat conduction around the lower electrode 20 can be reduced and the heat insulation state can be maintained.
[0034]
While the etching apparatus 10 is in the idle state and the chiller unit 12 is maintaining the energy saving mode as described above, the etching process is performed by the etching apparatus 10 based on the result of the host computer 16 prefetching based on the recipe information in the process sequence. It is assumed that a new substrate W is introduced or received in advance for receiving (step S6). In this case, the host computer 16 may send the time when the new substrate W is loaded into the process chamber 18 to the controller 14. Further, if necessary, specific etching processing conditions (recipe) for the substrate W may be sent.
[0035]
When the controller 14 receives a notification from the host computer 16, the controller 14 sets a time t5 at which the etching apparatus 10 is completely returned from the idle state to the normal operation state before the substrate loading time designated by the host computer 16, and the etching apparatus Necessary instruction signals are output to the respective units in 10 to return to the standby state. Further, an instruction signal is output to the chiller unit 12 so as to return from the energy saving mode to the normal mode (step S7).
[0036]
When the normal mode instruction signal is thus issued, the chiller unit 12 starts an operation for returning the flow rate of the refrigerant CW1 supplied to the etching apparatus 10 from the second flow rate N2 for the energy saving mode to the first flow rate N1 for the normal mode. (Step S8, time t3). In the configuration example of FIG. 1, the controller 14 directly controls the inverter 58 to increase the output of the pump 56 to a set value. The time T2 required for the flow rate switching for returning the flow rate is the output characteristics of the pump 56, the characteristics of the refrigerant CW1 (specific gravity, etc.), the flow rate variation (N2 → N1), and the fluid in the refrigerant circuit (24, 22, 26). It depends on the capacity, conductance, etc., and is usually about 5 to 8 minutes. Therefore, the refrigerant flow rate switching or returning operation is performed so that the refrigerant flow rate completely returns to the first flow rate N1 (for example, at time t4) before time t5 when the etching apparatus 10 side is completely returned to the normal operation state (for example, at time t4). The start time t3 may be determined.
[0037]
Thus, when the chiller unit 12 returns to the normal mode, the etching apparatus 10 can enter a standby state, and the substrate loading time designated by the host computer 16 can be made in time.
[0038]
In the sequence shown in FIG. 3, the host computer 16 detects the timing at which the etching apparatus 10 should be returned from the idle state to the normal operation state by pre-reading from the recipe information in the process sequence during the idle state. That is, the time T4 from time t1 when the chiller unit 12 is instructed to suppress the refrigerant flow rate to time t4 when the chiller unit 12 is instructed to return the refrigerant flow rate is indefinite. However, when the idle state period of the etching apparatus 10 can be calculated at the stage of switching the chiller unit 12 from the normal mode to the energy saving mode, the time T3 to T4 should be set in advance by the timer function on the controller 14 side. Can do.
[0039]
If it is known from the beginning that the idle state period of the etching apparatus 10 is remarkably long, the flow rate of the refrigerant CW1 is further suppressed from the second flow rate N2 to the extent that does not hinder the recovery. It is also possible to control or to completely stop the operation of each part in the chiller unit 10.
[0040]
Further, as described above, when the flow rate of the refrigerant CW1 is switched between the first flow rate N1 for the normal mode and the second flow rate N2 for the energy saving mode in the chiller unit 12, a considerable time (T1, T2) is required. ) Is required. Accordingly, the “threshold time Ts” of the idle state duration in the etching apparatus 10 which is a branch point for switching the chiller unit 12 from the normal mode to the energy saving mode is selected to be longer than the flow rate switching time (predetermined time T1 + T2). Is preferred.
[0041]
As described above, in this embodiment, it is caught (detected) from prefetching based on recipe information on the process sequence that the processing apparatus is in an idle state for a predetermined threshold time or more, and the chiller unit Therefore, the flow rate of the refrigerant to be supplied is suppressed to a moderately low flow rate over a reasonable period of time, so that significant energy saving of the chiller can be realized.
[0042]
In the above-described embodiment, only the lower electrode 20 in the etching apparatus 10 is temperature-controlled by the chiller unit 12. However, the temperature of the upper electrode 28 can also be controlled by the chiller unit 12 by providing the same refrigerant chamber or refrigerant passage as described above, and parts or members other than the electrodes can also be subject to temperature control of the chiller.
[0043]
  The configuration in the chiller unit 12 in the above-described embodiment is an example, and various modifications and changes are possible.For example, the temperature control of each part in the processing apparatus using a chiller is not limited to the cooling method,A heating method is also possible. The plasma etching apparatus 10 is also an example of the processing apparatus in the present invention, and the present invention can be applied to processing apparatuses of various other methods or uses (for example, CVD, oxidation, sputtering, etc.) that require a chiller. It is.
[0044]
【The invention's effect】
  As explained above,Treatment apparatus of the present invention andChiller control method for processing equipmentas well asChiller control deviceIsEffective energy saving in the processing system can be realized by appropriately controlling the refrigerant supply operation of the chiller according to the operating status of the processing apparatus.
[Brief description of the drawings]
FIG. 1 is a diagram showing a configuration of a processing system according to an embodiment of the present invention.
FIG. 2 is a flowchart showing a main procedure of chiller control in the embodiment.
FIG. 3 is a time chart showing timing of chiller control in the embodiment.
[Explanation of symbols]
10 Plasma etching equipment (processing equipment)
12 Chiller unit
14 Controller
16 Host controller
20 Lower electrode
22 Refrigerant chamber
24 Refrigerant supply pipe
26 Refrigerant recovery pipe
42 High frequency power supply
50 Refrigerant tank
52 Cooler
56 pumps
58 inverter
66 inverter
68 pumps

Claims (17)

A chiller control method for supplying a temperature control liquid refrigerant to a processing apparatus for performing predetermined processing on a substrate to be processed,
A first step of supplying the liquid refrigerant at a first flow rate from the chiller to the processing device during a period in which the processing device is normally operated for the processing;
A second step of detecting that the processing apparatus is in an idle state for a predetermined threshold time or more based on recipe information on a process sequence;
A third step of suppressing the flow rate of the liquid refrigerant from the first flow rate to a second flow rate smaller than the first flow rate after the processing device is switched from the normal operation state to the idle state;
When the processing apparatus is undetermined timing of returning to the normal operating state from when the idle state, the step of the liquid coolant on the basis of the recipe information in the sequence flow of the second in the idle state When a start time of a flow rate return operation for returning the flow rate to the first flow rate is determined, and an idle state period can be calculated when the processing device is in the idle state , a timer is set in the idle state. A fourth step of setting a start time of the flow rate return operation by a function ;
The flow rate return operation is started at the start time determined or set in the fourth step, and the flow rate of the liquid refrigerant is changed to the first flow rate before the processing device returns from the idle state to the normal operation state. A chiller control method for a processing apparatus, comprising: a fifth step of returning.   The chiller control method according to claim 1, wherein an electrode to which high-frequency power is applied is provided in the processing apparatus, and the liquid refrigerant is supplied from the chiller to the processing apparatus in order to control the temperature of the electrode.   The chiller control method according to claim 2, wherein the substrate is placed on the electrode.   4. The chiller control method according to claim 2, wherein the application of high-frequency power to the electrode is stopped during a period in which the processing apparatus is in the idle state.   The chiller control method according to claim 4, wherein the second flow rate of the refrigerant is set to a temperature at which the temperature of the electrode is substantially equal to an electrode temperature setting value when the processing apparatus is in a normal operation state.   The chiller control method according to any one of claims 2 to 5, wherein plasma is generated in the vicinity of the electrode by application of the high-frequency electric field.   The threshold time is a time required for returning the flow rate of the liquid refrigerant from the first flow rate to the second flow rate in the chiller and returning from the second flow rate to the first flow rate. The chiller control method according to any one of claims 1 to 6, wherein the chiller control method is set to a time longer than a time obtained by adding the required second time.   8. The chiller control according to claim 7, wherein in the fourth step, a time before the second time from a time corresponding to a timing at which the processing device returns to a normal operation state is set as a start time of the flow rate return operation. Method. A chiller control device for supplying a temperature control liquid refrigerant to a processing device for performing a predetermined process on a substrate to be processed through a refrigerant circulation path,
Refrigerant flow rate adjusting means for adjusting the flow rate of the liquid refrigerant supplied from the chiller to the processing device;
First sequence detecting means for detecting, based on recipe information on a process sequence, that the processing apparatus is in an idle state for a predetermined threshold time or more;
When the processing apparatus is switched from the normal operation state to the idle state according to the detection result by the first sequence detection unit, the refrigerant flow rate adjusting unit is controlled to control the flow rate of the liquid refrigerant in the normal operation state. A refrigerant flow rate suppressing means for suppressing the first flow rate to a second flow rate smaller than the first flow rate,
When the processing apparatus is undetermined timing of returning to the normal operating state from when the idle state, the step of the liquid coolant on the basis of the recipe information in the sequence flow of the second in the idle state When a start time of a flow rate return operation for returning the flow rate to the first flow rate is determined, and an idle state period can be calculated when the processing device is in the idle state , a timer is set in the idle state. Flow rate return operation start time determining means for setting a start time of the flow rate return operation by a function ;
The flow rate return operation is started at the start time determined or set by the flow rate return operation start time determining means, and the flow rate of the liquid refrigerant is changed before the processing device returns from the idle state to the normal operation state. A chiller control device for a processing apparatus, comprising: a refrigerant flow rate return means for returning the flow rate to 1.   The threshold time is a time required for returning the flow rate of the liquid refrigerant from the first flow rate to the second flow rate in the chiller and returning from the second flow rate to the first flow rate. The chiller control device according to claim 9, wherein the chiller control device is set to a time longer than a time obtained by adding the required second time.   11. The flow rate return operation start time determination unit uses the time before the second time as a start time of the flow rate return operation from a time corresponding to a timing at which the processing device returns to a normal operation state. Chiller control device. A process chamber capable of depressurizing and containing a substrate to be processed;
A temperature adjusting refrigerant passage provided in the process chamber;
A chiller for supplying liquid refrigerant to a refrigerant passage in the process chamber;
The processing apparatus which has a chiller control apparatus as described in any one of Claims 9-11 for controlling the said chiller.   The processing apparatus according to claim 12, wherein a mounting table for mounting the substrate is provided in the process chamber, and the coolant passage is formed in the mounting table.   The processing apparatus according to claim 13, wherein a shower head is provided in the process chamber so as to discharge and supply process gas from a plurality of gas discharge ports toward the substrate on the mounting table.   The processing apparatus according to claim 14, wherein the coolant passage is formed inside the shower head.   The processing apparatus according to claim 14, further comprising a high-frequency power feeding unit that applies a high-frequency for generating plasma of the processing gas between the mounting table and the shower head.   The processing apparatus according to claim 12, wherein the inside of the process chamber is maintained in a reduced pressure state during the idle state.

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