JP4320638B2 - Microwave high power amplifier - Google Patents

Description

  The present invention mainly relates to a microwave high-power amplifier mounted on an artificial satellite.

  Microwave high-power amplifiers are generally used in microwave communication equipment and radar devices. This amplifier uses an amplifying element such as a transistor or FET, and generates high heat from the amplifying element. From the viewpoint of maintaining the amplification characteristics and ensuring the reliability of the microwave high-power amplifier, it is necessary to efficiently dissipate the high heat generated in the amplification element. Various methods of waste heat are known, and one of them is a method of disposing heat through the heat pipe by arranging a heat pipe on the opposite side of the housing where the amplifier is mounted. Is known (for example, see Patent Document 1).

Japanese Patent Laid-Open No. 2001-267672 (FIGS. 5 and 6)

In conventional microwave high-power amplifiers, the heat generated in the amplifying element is wasted from the heat pipe through the chassis. Generally, the heat transport capacity of the heat pipe depends on the diameter of the heat pipe. Is expensive.
On the other hand, in recent years, satellite-mounted microwave high-power amplifiers are required to have higher output, which requires a large gate width as an amplifying element, and high heat generation occurs from the amplifying element. It becomes like this.
In order to waste such high heat generation outside the satellite structure, a heat pipe with a large diameter is required.

However, there is a strong demand for satellites to be smaller and lighter, and if a heat pipe with a large diameter cannot be used, the high heat generated from the amplifier can be sufficiently dissipated outside the satellite structure using only the heat pipe. Disappear.
For this reason, there has been a problem that the temperature of the amplifying element rises, the amplifying characteristics deteriorate, and the reliability of the amplifying element also decreases.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a heat dissipation structure for an electronic component with improved heat dissipation effect.

A microwave high-power amplifier according to the present invention is a driver amplifier having a carrier and a driver element mounted on the carrier.
A high-power amplifier having another carrier and a high-heat-generating high-power amplification element mounted on the other carrier and amplifying the output of the driver amplifier;
A chassis in which the carrier and the other carrier are mounted such that mounting surfaces are orthogonal to each other;
Radiation cooling fins that are thermally connected to the mounting surface of the other carrier with the chassis interposed therebetween,
It is comprised from.

According to the heat dissipation structure for an electronic component of the present invention, a high-power amplifier with high heat generation is mounted on the chassis, and a radiation cooling fin is provided on the surface opposite to the mounting surface of the high-power amplifier. By placing the structure so that it protrudes into outer space or disposing the heat of the high-power amplifier to the external space of the satellite structure, most of the high heat generated by the high-power amplifier is radiatively cooled. Since the waste heat can be directly discharged into the space through the fins, there is an effect that it is possible to provide a microwave high-power amplifier with an improved heat dissipation effect.

Embodiment 1 FIG.
FIG. 1 (a) is a perspective view of a microwave high-power amplifier according to Embodiment 1 of the present invention, and FIG. 1 (b) is a cross-sectional view taken along line AA ′ of FIG. 1 (a).
This microwave high-power amplifier includes a driver amplifier 2 mounted on a planar portion of a chassis 1 having an L-shaped structure, a high-power amplifier 3 mounted on a vertical portion, and between the driver amplifier 2 and the high-power amplifier 3. The chassis 1 is provided with an input terminal 5 for inputting a signal to the driver amplifier 2 and an output terminal 6 for taking out an output from the high-power amplifier 3.

Further, a heat pipe 7 is provided on the surface of the chassis 1 opposite to the mounting surface of the driver amplifier 2, and the chassis 1 on the opposite side of the mounting surface of the high-power amplifier 3 has a horizontal direction parallel to the bottom surface of the chassis 1. Radiation cooling fins 8 are attached to the.
Although not shown in the figure, the microwave high-power amplifier is attached to the outside of the satellite structure with screws or the like with the chassis 1 opposite to the mounting surface of the driver amplifier 2 facing the satellite structure side.

  The driver amplifier 2 includes an input matching circuit 11, an output matching circuit 12, and a driver amplifying element 9 that are mounted on the carrier 10. The input matching circuit 11 is provided to match the power supply impedance connected to the input terminal 5 and the input impedance of the driver amplifying element 9, and the output matching circuit 12 is the input impedance of the isolator 4 and the output of the driver amplifying element 9. It is provided to match the impedance.

The high output amplifier 3 has a similar circuit configuration, and includes an input matching circuit 15, an output matching circuit 16, and a high output amplifying element 13 mounted on the carrier 14.
The input matching circuit 15 outputs the output impedance of the isolator 4 and the input impedance of the high output amplifying element 13, and the output matching circuit 13 determines the load impedance connected to the output terminal 6 and the output impedance of the high output amplifying element 13. Each is provided for alignment.

  The isolator 4 is provided to prevent deterioration of amplifier characteristics due to multiple reflections of the driver amplifier 2 and the high-power amplifier 3 and to supply a signal to the high-power amplifier 3 provided in a direction perpendicular to the driver amplifier 2. That is, the carrier 10 on which the driver amplifier 2 is placed and the carrier 14 on which the high-power amplifier 3 is placed are mounted on the chassis 1 such that the mounting surfaces on the chassis 1 are orthogonal to each other.

The heat pipe 7 is disposed so as to contact the surface of the chassis 1 opposite to the mounting surface of the driver amplifier 2.
As a result, the heat generated from the driver amplification element 9 of the driver amplifier 2 is conducted to the heat pipe 7 through the carrier 10 and the chassis 1, and can be discharged outside the satellite structure by the heat pipe 7.

  The radiation cooling fin 8 is arranged on the chassis 1 close to the mounting surface of the high-power amplifier 3 so as to protrude from the satellite structure into outer space, and the radiation cooling fin 8 is designed so that heat can be efficiently discharged into outer space. Has been.

  For this reason, most of the heat generated in the high-power amplifier 13 in the high-power amplifier 3 is transferred to the carrier 14 and the chassis 1 and is directly wasted into the outer space by the radiation cooling fins 8. Heat is discharged from the heat pipe 7 via.

Next, the operation will be described.
A signal of a desired frequency input from the input terminal 5 is first amplified to a desired level by the driver amplifier 2.
The amplified signal then passes through the isolator 4 and is input to the high power amplifier 3.
Further, it is amplified to a high level by the high output amplifier 3 and outputted from the output terminal 6.

  Thus, the microwave high-power amplifier according to the present invention can also have an amplification function similar to that of the prior art.

  As described above, in the microwave high-power amplifier according to the present invention, the driver amplifier 2 with relatively small heat generation is mounted on the plane portion in the L-type chassis 1, and the heat pipe is mounted on the chassis surface opposite to the mounting surface of the driver amplifier. In addition, the high-power amplifier 3 with high heat generation is mounted on the vertical portion of the L-shaped chassis 1 and the chassis surface opposite to the mounting surface of the high-power amplifier 3 is cooled by radiation so that it protrudes from space into the outer space. Fins 8 are provided.

  For this reason, slight heat generated by the driver amplifier 2 can be wasted outside the satellite structure via the heat pipe 7. In addition, most of the high heat generation generated by the high-power amplifier 3 can be wasted directly into space through the radiation cooling fins 8.

  By dispersing the waste heat route in this way, it is possible to avoid the concentration of heat on the heat pipe 7, and even if a relatively thin heat pipe 7 is used, the heat generated by the microwave high-power amplifier can be efficiently transmitted to the satellite. Waste heat can be discharged outside the structure.

  Therefore, it is possible to maintain good amplification characteristics without increasing the temperature of the driver amplifier element 9 and the high output 13 and to improve the reliability of the microwave high output amplifier. It is particularly effective when using a WBG (Wide Band Gap) device that generates a higher amount of heat per unit gate width and generates higher heat, instead of the conventional transistors and FETs used as amplification elements.

Embodiment 2
FIG. 2 is a diagram showing the structure in the vicinity of the high-power amplifying element 13 of the microwave high-power amplifier 3 according to the second embodiment of the present invention, and the other parts are the same as those of the first embodiment.
In the second embodiment, the heat radiating sheet 17 is provided so as to cover the upper surface of the high-power amplifying element 13 in the first embodiment, and the heat radiating sheet 17, the input matching circuit 15, and the output matching circuit 16 are not in contact with each other. It is configured.

  As a result, the high heat generation generated by the high output amplifying element 13 is discarded from the lower surface of the package of the high output amplifying element 13 directly by the radiation cooling fins 8 via the carrier 14 and the chassis 1. The heat conducted to the upper surface of 13 is also wasted by the radiation cooling fins 8 via the carrier 14 and the chassis 1.

  Therefore, the temperature of the high-power amplifying element 13 can be lowered than in the first embodiment, so that better amplification characteristics can be obtained and high reliability can be obtained.

Embodiment 3
FIG. 3 is a diagram showing the structure in the vicinity of the microwave high-power amplifier 3 according to the third embodiment of the present invention, and other parts are the same as those of the first embodiment.
In the third embodiment, the carrier 14 is provided with two inclined surfaces that obliquely cut the side surfaces of the carrier 14 between the mounting surface of the high-power amplifying element 13 and the mounting surfaces of the input matching circuit 15 and the output matching circuit 16. Therefore, the side surfaces of the input matching circuit 15 and the output matching circuit 16 are also structured to have inclined surfaces that are cut obliquely so as to fit the aforementioned inclined surfaces of the carrier 14. Both inclined surfaces of the carrier 14 and the inclined surfaces of the input matching circuit 15 and the output matching circuit 16 are disposed close to and opposed to each other.

  The high heat generated from the high-power amplifying element 13 has a property of conducting in a direction of approximately 45 ° with respect to the vertical direction from the lower surface of the package of the high-power amplifying element 13.

  For this reason, most of the high heat generated from the high-power amplifying element 13 is wasted outside the satellite structure by the radiation cooling fins 8 via the carrier 14 and the chassis 1. Thus, more of the high heat generated from the high-power amplification element 13 is wasted by the radiation cooling fins 8.

  As a result, even if the heat pipe 7 is slightly thinner than the conventional technology, the high-power amplifying element 13 can be maintained at a desired constant temperature.

  In addition, by cutting the side surfaces of the input matching circuit 15 and the output matching circuit 16 obliquely in this way, the connection characteristics generated at the connection portion between the input matching circuit 15 and the output matching circuit 16 and the high-power amplifying element 13 are obtained. Reactance is reduced, and electrical characteristics can be improved.

  Therefore, the temperature of the high-power amplifying element 13 can be lowered than in the first embodiment, so that better amplification characteristics can be obtained and high reliability can be obtained.

It is a figure which shows the perspective view of the microwave high-power amplifier which concerns on Embodiment 1 of this invention. It is a figure showing the structure of the high output amplifier 3 vicinity in Embodiment 2 of this invention. It is a figure showing the structure of the high output amplifier 3 vicinity in Embodiment 3 of this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 Chassis, 2 Driver amplifier, 3 High output amplifier, 4 Isolator, 5 Input terminal, 6 Output terminal, 7 Heat pipe, 8 Radiation cooling fin, 9 Driver amplification element, 10, 14 Carrier, 11, 15 Input matching circuit, 12 , 16 Output matching circuit, 13 High output amplifier, 17 Heat dissipation sheet.

Claims (3)

A driver amplifier having a carrier and a driver element mounted on the carrier;
A high-power amplifier having another carrier and a high-heat-generating high-power amplification element that is mounted on the other carrier and amplifies the output of the driver amplifier;
A chassis equipped with the carrier and the other carrier ;
It is disposed on the surface of the chassis opposite to the mounting surface of the other carrier, and is thermally connected to the high-power amplifying element with the chassis interposed therebetween. The heat of the high-power amplifying element is transferred to the external space of the satellite structure. Radiation cooling fins to waste heat ,
A microwave high-power amplifier comprising: A driver amplifier having a carrier and a driver element mounted on the carrier;
A high-power amplifier having another carrier and a high-heat-generating high-power amplification element that is mounted on the other carrier and amplifies the output of the driver amplifier;
A chassis equipped with the carrier and the other carrier;
A radiation cooling fin disposed on a surface opposite to the mounting surface of the other carrier in the chassis and thermally connected with the chassis interposed therebetween,
Consisting of
The driver amplifier is mounted on the satellite structure,
The microwave high-power amplifier according to claim 1, wherein the radiation cooling fin is disposed so as to protrude into an external space of the satellite structure . The carrier of the high output amplifying element is
Each of the side surfaces between the mounting surface of the high-power amplification element and the mounting surface of the input matching circuit and the output matching circuit has inclined surfaces
2. The microwave high-power amplifier according to claim 1, wherein the inclined surfaces of the input matching circuit and the output matching circuit are arranged to face each other in close proximity to the inclined surface of the carrier.

Images