JP4322082B2 - Manufacturing method of solar cell - Google Patents

Description

  The present invention relates to a method for manufacturing a solar cell, and more particularly to a method for manufacturing a solar cell capable of manufacturing a high-power solar cell.

In recent years, development of clean energy has been desired due to problems of depletion of energy resources and global environmental problems such as an increase in atmospheric CO ₂ . In particular, solar power generation using solar cells has been developed and put into practical use as a new energy source that can solve the above-mentioned global environmental problems and the like, and is on the path of development.

  A schematic cross-sectional view of FIG. 11 shows a series of flows of an example of a manufacturing process of a conventional solar cell. First, in FIG. 11A, a surface-affected layer formed during the manufacture of the semiconductor substrate 101 made of p-type silicon or the like is removed, and a textured surface including fine pyramidal irregularities is formed on the surface of the semiconductor substrate 101. Therefore, the semiconductor substrate 101 is etched by immersing the semiconductor substrate 101 in a solution (NaOH solution) containing sodium hydroxide.

  Next, as illustrated in FIG. 11B, a dopant liquid 102 containing an n-type diffusion source such as phosphorus (P) is applied to the surface of the semiconductor substrate 101.

Then, by heat-treating the semiconductor substrate 101 coated with the dopant liquid 102 in a diffusion furnace, an n ⁺ layer 103 is formed on the light receiving surface side of the semiconductor substrate 101 to form a pn junction as shown in FIG. Cause it to occur.

Thereafter, as shown in FIG. 11D, an antireflection film 104 made of silicon nitride is formed on the n ⁺ layer 103 by plasma CVD or the like.

Next, as shown in FIG. 11E, a surface electrode 105 is formed on the light receiving surface side surface of the semiconductor substrate 101 (hereinafter referred to as “light receiving surface”), and the surface opposite to the light receiving surface of the semiconductor substrate 101. A back electrode 106 made of an aluminum (Al) electrode 106a and a silver (Ag) electrode 106b is formed on the back surface (hereinafter referred to as “back surface”). Here, the surface electrode 105 is first screen-printed with a conductive paste containing Ag as a material of the surface electrode 105 on the antireflection film 104, and then heat-treated, so that the printed conductive paste becomes an antireflection film. This is an electrode that penetrates 104 and is joined to the n ⁺ layer 103. Note that during this heat treatment, Al diffuses into the semiconductor substrate 101 to form the p ⁺ layer 114.

  A schematic top view of the solar cell thus obtained is shown in FIG. In FIG. 12, the surface electrode 105 includes a bus bar electrode 112 extending in a predetermined direction on the antireflection film 104 and a plurality of finger electrodes 113 intersecting the bus bar electrode 112. The bus bar electrode 112 is installed for the purpose of soldering a copper wire called an interconnector when connecting solar cells, and the finger electrode 113 is installed for the purpose of collecting the current in the solar cell. Yes.

  A schematic cross-sectional view of FIG. 13 shows a conventional process of screen-printing a conductive paste containing Ag as a material of the surface electrode 105. As shown in FIG. 13A, a screen 109 made up of a mask 107 having a through-hole formed in a portion corresponding to the surface electrode 105 and a screen rod 108 placed on the mask 107 is placed on the antireflection film 104. As shown in FIG. 13B, the conductive paste 110 applied on the screen ridge 108 is applied to the portion corresponding to the surface electrode 105 on the antireflection film 104 by moving the squeegee 111. To do. Then, when the screen 109 covering the antireflection film 104 is removed, the conductive paste 110 is printed on the antireflection film 104.

  The screen printing using the screen ridge 108 is advantageous in that a variety of printing is possible and the amount of the conductive paste 110 applied can be changed by changing the shape of the screen ridge 108.

  However, in screen printing using the screen ridge 108, due to the flexibility of the screen ridge 108, the finger electrodes 113 that are uniformly tall cannot be formed, and the height of the finger electrodes 113 is high. There was a problem that variation would occur. The tall finger electrode 113 can collect a large amount of current, but the short finger electrode 113 reduces the amount of current that can be collected. Therefore, if the height of the finger electrode 113 varies, the output power of the solar cell The amount is reduced.

In addition, due to the shape of the screen rod 108, there is a problem that a portion where the conductive paste 110 does not reach is formed on the antireflection film 104 and the finger electrode 113 is disconnected. When the finger electrode 113 is disconnected, the current once flowing into the finger electrode 113 flows into the n ⁺ layer having a higher electrical resistivity than the finger electrode 113 and then flows into the bus bar electrode 112, resulting in a large current loss. Become.

Patent Document 1 discloses a method of separately screen-printing bus bar electrodes and finger electrodes. However, in this method, since it is necessary to perform screen printing twice, the number of manufacturing steps increases, and further, it is necessary to screen print the conductive paste so that the bus bar electrode and the finger electrode intersect. There was a problem that the manufacturing cost of the battery increased.
JP 62-156881 A

  The objective of this invention is providing the manufacturing method of the solar cell which can form a tall finger electrode uniformly and can manufacture a high output solar cell efficiently.

The present invention is a conductive paste method for manufacturing a solar cell comprising a step of forming an electrode by screen-printing, screen printing, after applying a conductive paste on cleans, ski conductive paste The electrode is composed of a bus bar electrode extending in a predetermined direction and a finger electrode intersecting with the bus bar electrode. The electrode corresponds to the bus bar electrode of the screen and extends in the predetermined direction. to have a plurality of discrete through-hole is formed in the region, a method for manufacturing a solar cell in a portion corresponding to the finger electrodes that have through holes of the slit shape corresponding to the shape of the finger electrodes are formed in the screen It is.

  Moreover, in the manufacturing method of the solar cell of this invention, it is preferable that the thickness of the part corresponding to the bus-bar electrode in a screen is thinner than the other part of a screen.

  Further, in the method for manufacturing a solar cell of the present invention, a portion corresponding to the bus bar electrode on one surface of the screen is recessed, and a conductive paste is applied to the surface opposite to the recessed surface of the screen. Printing is preferably performed.

  Moreover, in the manufacturing method of the solar cell of this invention, it is preferable that the largest thickness of the screens other than the part corresponding to a bus-bar electrode is 50 micrometers or more and 150 micrometers or less. Here, the minimum thickness of the screen corresponding to the bus bar electrode is preferably ½ or less of the maximum thickness of the screen other than the portion corresponding to the bus bar electrode.

Moreover, in the manufacturing method of the solar cell of this invention, it is preferable that the space | interval of several discontinuous through-holes is 10 micrometers or more and 100 micrometers or less.

Moreover, in the manufacturing method of the solar cell of this invention, it is preferable that the shape of a some discontinuous through-hole is a shape of at least one of circular and semicircle.

In the method for producing a solar cell of the present invention, it is preferable that squeezing is performed in the longitudinal direction of the slit-shaped through hole.

  In the method for manufacturing a solar cell of the present invention, the screen is preferably made of metal.

  Moreover, in the manufacturing method of the solar cell of this invention, it is preferable that the viscosity of an electrically conductive paste is 30 Pa.s or more and 340 Pa.s or less.

  ADVANTAGE OF THE INVENTION According to this invention, the manufacturing method of the solar cell which can form a tall finger electrode uniformly and can manufacture a high output solar cell efficiently can be provided.

  Embodiments of the present invention will be described below. In the drawings of the present application, the same reference numerals denote the same or corresponding parts.

  A schematic cross-sectional view of FIG. 1 shows a series of flows of a preferable example of the manufacturing process of the solar cell of the present invention. First, in FIG. 1A, a surface-affected layer formed during the manufacture of a semiconductor substrate 1 made of p-type silicon is removed, and a texture structure including fine pyramidal irregularities on the light receiving surface of the semiconductor substrate 1 is formed. For this purpose, the semiconductor substrate 1 is etched by immersing the light receiving surface of the semiconductor substrate 1 in an NaOH solution.

Next, as shown in FIG. 1B, a dopant liquid 2 in which diphosphorus pentoxide (P ₂ O ₅ ) is dissolved in alcohol is applied to the light-receiving surface of the semiconductor substrate 1. Then, the semiconductor substrate 1 to which the dopant liquid 2 is applied is heat-treated at a temperature of 800 ° C. or higher and 900 ° C. or lower for 10 minutes to 30 minutes in a diffusion furnace, so that the semiconductor substrate 1 of the semiconductor substrate 1 is heated as shown in FIG. An n ⁺ layer 3 is formed on the light receiving surface to form a pn junction. Here, the n ⁺ layer 3 can also be performed by heating the semiconductor substrate 1 in phosphorus oxychloride (POCl ₃ ) after the semiconductor substrate 1 is placed in a diffusion furnace.

Thereafter, as shown in FIG. 1D, a film made of titanium oxide is formed as an antireflection film 4 on the n ⁺ layer 3 with a thickness of 60 nm or more and 90 nm or less using the CVD method. Here, as the antireflection film 4, a film made of silicon nitride can be formed on the n ⁺ layer 3 with a thickness of 80 nm or more and 100 nm or less by using a plasma CVD method.

Next, after the conductive paste containing Al and the conductive paste containing Ag are printed on the back surface of the semiconductor substrate 1, the printed semiconductor substrate 1 is baked at a temperature of 600 ° C. to 800 ° C. to obtain FIG. ), A back electrode 6 composed of an Al electrode 6a and an Ag electrode 6b is formed, and Al diffuses into the semiconductor substrate 1 to form a p ⁺ layer 16.

  Then, as shown in FIG. 1F, a surface electrode 5 is formed on the light receiving surface of the semiconductor substrate 1.

  Here, in the present invention, the surface electrode 5 is formed as follows. First, the screen 7 shown in the schematic top view of FIG. 2 is prepared. Here, in the screen 7, a through hole 8 is formed in a portion corresponding to the bus bar electrode constituting the surface electrode, and a through hole 9 is formed in a portion corresponding to the finger electrode. Then, as shown in the schematic side view of FIG. 3, the screen 7 is placed on the antireflection film 4, and a conductive paste containing Ag is applied onto the screen 7. Next, the squeegee is moved by moving the conductive paste on the screen 7 in the longitudinal direction of the through hole 9 corresponding to the finger electrode represented by the arrow 10a or the arrow 10b shown in the schematic top view of FIG. To do. By moving the squeegee in this direction, a more uniform amount of conductive paste can be printed. Then, after removing the screen 7, the semiconductor substrate 1 is heat-treated, whereby the printed conductive paste penetrates the antireflection film 4 to form the surface electrode 5 that is electrically connected to the semiconductor substrate 1. Here, as shown in the schematic top view of FIG. 5, the surface electrode 5 on the antireflection film 4 includes a bus bar electrode 12 extending in a predetermined direction, and a finger electrode 13 intersecting with the bus bar electrode 12. It is composed of

  Finally, as shown in FIG. 1G, the surface electrode 5 is covered with solder 11. Here, the coating of the solder 11 is performed by immersing the surface electrode 5 in a molten solder bath for several minutes and then washing the surface electrode 5 with warm water.

  As described above, in the present invention, the conductive paste is directly applied on the screen without using a screen ridge that causes the height of the finger electrode to be uneven and further reduces the height of the finger electrode. By doing so, screen printing is performed, so that uniform and tall finger electrodes can be formed. In the present invention, the bus bar electrode and the finger electrode can be screen-printed at a time. Therefore, in the present invention, a high-power solar cell can be efficiently manufactured.

  FIG. 6 shows a schematic top view of another preferred example of the screen used in the present invention. The screen 7a is characterized in that a plurality of discontinuous through holes 8a are formed in a portion corresponding to the bus bar electrode. When the thickness of the screen 7 shown in FIG. 2 is not less than 50 μm and not more than 150 μm suitable for the height of the finger electrode, the thickness of the screen 7 is too thin, and the conductive paste applied on the screen 7 When the squeegee is squeezed in the longitudinal direction of the through hole 9 corresponding to the finger electrode, the protrusion 14 of the screen 7 may warp upward. Therefore, like the screen 7a shown in FIG. 6, the through-hole corresponding to the bus bar electrode is a plurality of discontinuous through-holes 8a, and is represented by the arrow 10a or the arrow 10b shown in the schematic top view of FIG. Even when the conductive paste is squeezed in the longitudinal direction of the through-hole 9 corresponding to the finger electrode, the screen 7a does not warp upward, so that the maximum thickness of the screen 7a is 50 μm or more. Even in a very thin case of 150 μm or less, it is possible to form finger electrodes that are uniformly tall. Here, the width W in the longitudinal direction of the through hole 9 corresponding to the finger electrode is not less than 50 μm and not more than 150 μm.

  FIG. 8A shows a schematic enlarged sectional view of the screen 7a shown in FIG. As shown in FIG. 8A, the portion Y corresponding to the bus bar electrode on one surface of the screen 7a is depressed, and the thickness of the portion Y corresponding to the bus bar electrode on the screen 7a corresponds to the bus bar electrode on the screen 7a. It is thinner than the portion Z other than the portion to be.

  Here, when the maximum thickness T1 of the portion Z other than the portion corresponding to the bus bar electrode of the screen 7a is 50 μm or more and 150 μm or less, the minimum thickness T2 of the portion Y corresponding to the bus bar electrode of the screen 7a is It is preferably less than or equal to ½ of the maximum thickness T1 of the portion Z other than the portion corresponding to the bus bar electrode 7a. In this case, as shown in the schematic cross-sectional view of FIG. 8B, when the conductive paste 110 is squeezed using the squeegee 111, the conductive paste 110 that has passed through the through hole 8a becomes the screen 7a. Since the conductive paste 110 to be printed is not easily formed into dots, the contact area between the interconnector and the busbar electrode does not decrease, and the interconnector and the busbar electrode It tends to be possible to improve the bonding strength.

  The through hole 8a preferably has at least one of a circular shape and a semicircular shape. In this case, a more uniform conductive paste can be printed and the conductive paste can hardly be printed, so that the bonding strength between the interconnector and the bus bar electrode tends to be further improved.

  Moreover, as shown in FIG. 8, it is preferable that the space | interval X of the through-hole 8a corresponding to the bus-bar electrode formed in the screen 7a is 10 micrometers or more and 100 micrometers or less. When the interval X between the through holes 8a is less than 10 μm, it tends to be difficult to form the through holes 8a by etching or the like. When the interval X between the through holes 8a is larger than 100 μm, the bus bar of the screen 7a There is a tendency that a plurality of discontinuous through holes 8a cannot be formed in a portion corresponding to the electrode.

  Moreover, it is preferable that the viscosity of the electrically conductive paste used for this invention is 30 Pa.s or more and 340 Pa.s or less. When the viscosity of the conductive paste is less than 30 Pa · s, the viscosity of the conductive paste tends to be too low to maintain the shape of the surface electrode after printing, and the viscosity of the conductive paste is higher than 340 Pa · s However, the viscosity of the conductive paste is so high that it is difficult to squeeze. Here, the conductive paste used in the present invention includes an organic solvent, glass frit, and the like in addition to Ag as a material for the surface electrode.

  The screens 7 and 7a used in the present invention are preferably made of metal. In this case, since the screens 7 and 7a are less likely to warp upward or move during screen printing of the conductive paste, the screen printing of the conductive paste can be stably performed. In addition, since the deformation of the through holes formed in the screens 7 and 7a is small, the screens 7 and 7a can be used for a long period of time. Here, examples of the metal used for the screens 7 and 7a include iron and stainless steel.

Example 1
First, a p-type single crystal silicon substrate having an electrical resistivity of 3 Ω · cm and a thickness of 300 μm was washed. Then, the light-receiving surface of the p-type single crystal silicon substrate was immersed in an NaOH solution to form micropyramidal irregularities on the light-receiving surface of the p-type single crystal silicon substrate.

Next, a dopant solution in which P ₂ O ₅ is dissolved in ethanol is applied to the light-receiving surface of the p-type single crystal silicon substrate, and the p-type single crystal silicon substrate is heat-treated in a diffusion furnace at 800 ° C. for 15 minutes. An n ⁺ layer was formed in a region of about 0.5 μm downward from the light receiving surface of the p-type single crystal silicon substrate.

  Then, a film made of titanium oxide as an antireflection film was formed with a thickness of 90 nm on the light receiving surface of the p-type single crystal silicon substrate by using the CVD method.

  Next, a conductive paste containing Al and a conductive paste containing Ag were respectively screen printed on the back surface of the p-type single crystal silicon substrate, and then the back electrode was formed by heating the p-type single crystal silicon substrate at 800 ° C. .

  Subsequently, a stainless steel screen 7a shown in FIG. 7 is placed on the antireflection film on the light receiving surface side of the p-type single crystal silicon substrate, and a conductive paste containing Ag is applied on the screen 7a. Screen printing was performed by squeezing in the longitudinal direction of the through hole corresponding to the finger electrode of 7a. Here, a portion corresponding to the bus bar electrode on one surface of the screen 7a is depressed, and a portion of the screen 7a corresponding to the bus bar electrode is thinner than the other portion of the screen 7a, and the screen 7a is depressed. A conductive paste was applied to the surface opposite to the surface and screen printing was performed. The thickness of the screen 7a other than the portion corresponding to the bus bar electrode was 50 μm, and the thickness of the screen 7a at the portion corresponding to the bus bar electrode was 25 μm. Moreover, the space | interval of several discontinuous circular through-holes corresponding to a bus-bar electrode was 50 micrometers. Moreover, the viscosity of the conductive paste was 100 Pa · s.

  Then, by heating the p-type single crystal silicon substrate after screen printing at 800 ° C., the printed conductive paste containing Ag passes through the antireflection film and is electrically connected to the p-type single crystal silicon substrate. A surface electrode composed of a bus bar electrode and a finger electrode was formed.

  FIG. 9 shows the height distribution of the finger electrodes formed in the first embodiment. Here, the height of the finger electrode is a height measured from the surface of the p-type single crystal silicon substrate. In addition, the height of the finger electrode is obtained by extracting an arbitrary number of finger electrodes from the finger electrode formed in Example 1 and measuring the height of the finger electrode. There are many peaks representing the height of the finger electrode. In the distribution of FIG. 9, the highest peak point represents the highest peak height of each finger electrode.

  As shown in FIG. 9, the height of the finger electrode formed in Example 1 was 35 μm or more and 48 μm or less, and it was confirmed that the finger electrode having a uniform height could be formed.

Further, the surface electrode of Example 1 was immersed in a molten solder bath for 5 minutes, and then the surface electrode was washed with warm water to complete the solar cell of Example 1. And the current-voltage curve (IV curve) of the solar cell of Example 1 was created, and the fill factor (F.F.) and the maximum power (P _max ) of the solar cell of Example 1 were investigated. The results are shown in Table 1. In Table 1, Isc represents a short circuit current and Voc represents an open circuit voltage.

(Comparative Example 1)
Surface electrodes were formed in the same manner as in Example 1 except that screen printing was performed by placing a screen cage on the stainless steel screen 7a shown in FIG. 7, and the height of the finger electrodes was examined. FIG. 10 shows the height distribution of the finger electrodes.

  As shown in FIG. 10, the height of the finger electrode formed in Comparative Example 1 was 12 μm or more and 42 μm or less, and the height of the finger electrode was varied as compared with the finger electrode of Example 1. .

Further, the surface electrode of Comparative Example 1 was immersed in a molten solder bath for 5 minutes, and then the surface electrode was washed with warm water to complete the solar cell of Comparative Example 1. And the IV curve of the solar cell of the comparative example 1 was created, and the fill factor (FF) and the maximum electric power ( _Pmax ) of the solar cell of the comparative example 1 were investigated. The results are shown in Table 1.

As shown in Table 1, the solar cell of Example 1 was almost the same as the solar cell of Comparative Example 1 in terms of short circuit current (Isc) and open circuit voltage (Voc), but the solar cell of Example 1 was a fill factor. It was superior to the solar cell of Comparative Example 1 in (F.F.) and maximum power (P _max ). This is because the solar cell of Example 1 was able to form a finger electrode that was uniformly taller than the solar cell of Comparative Example 1, so that the output of the solar cell could be further extracted. This is probably because the current loss was reduced because no disconnection occurred.

  It should be understood that the embodiments and examples disclosed herein are illustrative and non-restrictive in every respect. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

  In the method for manufacturing a solar cell according to the present invention, a high-power solar cell can be efficiently manufactured by uniformly forming tall finger electrodes. Therefore, the present invention can be suitably used in the solar cell field. .

(A) is typical sectional drawing of the semiconductor substrate used by this invention, (B) is typical sectional drawing of the semiconductor substrate shown to (A) after dopant liquid application | coating, (C) is n FIG. 4 is a schematic cross-sectional view of the semiconductor substrate shown in FIG. 4A after forming the ⁺ layer, and FIG. 4D is a schematic cross-sectional view of the semiconductor substrate shown in FIG. Is a schematic cross-sectional view of the semiconductor substrate shown in (A) after the formation of the back electrode, (F) is a schematic cross-sectional view of the semiconductor substrate shown in (A) after the formation of the front electrode, and (G) FIG. 2 is a schematic cross-sectional view of the semiconductor substrate shown in (A) after the surface electrode is coated with solder. It is a typical top view of a preferable example of the screen used for this invention. It is a typical side view of the semiconductor substrate after installing the screen shown in FIG. 2 on an antireflection film in the present invention. It is the figure which showed the direction which squeezes an electrically conductive paste using the screen shown in FIG. It is a typical top view of a semiconductor substrate after a surface electrode is formed in the present invention. It is a typical top view of other preferable examples of a screen used for the present invention. It is the figure which showed the direction which squeezes an electrically conductive paste using the screen shown in FIG. (A) is a typical expanded sectional view of the screen shown in FIG. 6, (B) is a typical enlarged sectional view of the screen shown in FIG. 6 when squeezing a conductive paste. It is the figure which showed distribution of the height of the finger electrode formed in Example 1. FIG. It is the figure which showed distribution of the height of the finger electrode formed in the comparative example 1. (A) is typical sectional drawing of the conventional semiconductor substrate, (B) is typical sectional drawing of the semiconductor substrate shown to (A) after dopant liquid application | coating, (C) is n ^<+> layer formation. It is typical sectional drawing of the semiconductor substrate shown to (A) after, (D) is typical sectional drawing of the semiconductor substrate shown to (A) after antireflection film formation, (E) is a surface electrode. It is typical sectional drawing of the semiconductor substrate shown to (A) after back electrode formation. It is a typical top view of the conventional solar cell. (A) is typical sectional drawing of the conventional screen installed on the anti-reflective film, (B) is typical sectional drawing of the screen shown to (A) when screen printing is performed. is there.

Explanation of symbols

1,101 semiconductor substrate, 2,102 dopant solution, 3,103 n ⁺ layer, 4,104 antireflection film, 5,105 surface electrode, 6,106 back electrode, 6a, 106a Al electrode, 6b, 106b Ag electrode, 7, 7a, 109 screen, 8, 8a, 9 through hole, 10a, 10b arrow, 11 solder, 12, 112 bus bar electrode, 13, 113 finger electrode, 14 protrusion, 15 cavity, 16, 114 p ⁺ layer, 107 Mask, 108 screen, 110 conductive paste, 111 squeegee.

Claims (10)

A method for producing a solar cell comprising a step of forming an electrode by screen printing a conductive paste,
The screen printing after coating the conductive paste on cleans, performed by squeegeeing said conductive paste,
The electrode comprises a bus bar electrode extending in a predetermined direction and a finger electrode intersecting the bus bar electrode,
A plurality of discontinuous through holes are formed in a portion corresponding to the bus bar electrode of the screen and extending in the predetermined direction, and a portion corresponding to the finger electrode in the screen is the through hole of the slit shape corresponding to the shape of the finger electrodes is characterized that you have been formed, the manufacturing method of the solar cell. The thickness of the portion corresponding to the bus bar electrode in the screen, and wherein the thinner than other portions of the screen, a method for manufacturing a solar cell according to claim 1. A portion corresponding to the bus bar electrode on one surface of the screen is recessed, and the screen printing is performed by applying the conductive paste on a surface opposite to the surface where the screen is recessed. The method for manufacturing a solar cell according to claim 2 . The maximum thickness of the screen other than the portion corresponding to the bus bar electrode, characterized in that at 50μm or 150μm or less, producing a solar cell according to claim 2 or 3. The minimum thickness of the screen of a portion corresponding to the bus bar electrode, wherein the bus bar electrode is 1/2 or less of the maximum thickness of the screen other than the portion corresponding, according to claim 4 A method for manufacturing a solar cell. The spacing of the plurality of discrete through-holes, characterized in that at 10μm or 100μm or less, producing a solar cell according to any one of claims 1 to 5. Wherein the plurality of the shape of the discontinuous through holes, circular and characterized in that it is a semi-circular at least one of shape, manufacturing a solar cell according to any one of claims 1 to 6. The squeegeeing is characterized to be performed in the longitudinal direction of the through hole of the slit-shaped, producing a solar cell according to any one of claims 1 to 7. The screen is characterized in that it consists of metal, for producing a solar cell according to any one of claims 1 to 8. Wherein the viscosity of the conductive paste is not more than 30 Pa · S or more 340 Pa · S, a method for manufacturing a solar cell according to any one of claims 1 to 9.

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