JP4326751B2 - Substrate processing unit - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a processing apparatus that performs film thickness measurement and edge exposure on a semiconductor substrate, a glass substrate for a liquid crystal display device, a glass substrate for a photomask, a substrate for an optical disk (hereinafter simply referred to as “substrate”).
[0002]
[Prior art]
A product such as a semiconductor or a liquid crystal display is manufactured by subjecting the substrate to a series of processes such as cleaning, resist coating, exposure, development, etching, formation of an interlayer insulating film, heat treatment, and dicing. In order to maintain the quality of the semiconductor product, the film thickness of the substrate is measured after the resist coating process.
[0003]
There are various measurement positions at which the film thickness of the substrate is measured, but a flat area having a film thickness where no pattern is formed may be used as the measurement position. During film thickness measurement, the substrate is transported by a transport robot or the like and held at a predetermined position for film thickness measurement. However, there is a limit to the operation accuracy of the apparatus, and a slight shift occurs in the holding position. Sometimes. Therefore, in order to measure the film thickness at a desired position, it is necessary to know the exact position of the held substrate prior to the film thickness measurement process.
[0004]
Conventionally, substrate position measurement and film thickness measurement have been performed by the following methods. First, the film thickness measurement target substrate held at a predetermined position is photographed using a camera. Then, by analyzing the photographed image, the position of the alignment mark or die formed as a pattern on the substrate is extracted, thereby grasping the holding state of the substrate and the position of the pattern. Then, the measurement region of the substrate is calculated from the measured holding state of the substrate, and the film thickness is measured by moving the optical head to the measurement position.
[0005]
[Problems to be solved by the invention]
The method for determining the film thickness measurement position using the image analysis described above has an advantage of high accuracy because the measurement position is calculated based on the pattern actually formed on the substrate. However, this method requires expensive hardware for image capture processing, and also requires hardware with very high processing capability in order to perform image analysis.
[0006]
In addition, a space for installing a camera and a control unit related to image processing is required. Furthermore, since the image matching process is performed between the pre-registered pattern and the imaged pattern on the substrate, an error occurs in the pattern matching depending on the processing conditions, and all the lots to be measured cannot be detected. there is a possibility.
[0007]
In view of the above problems, it is an object of the present invention to accurately measure the thickness of a substrate with a low-cost and space-saving apparatus configuration.
[0008]
[Means for Solving the Problems]
In order to solve the above problem, the invention according to claim 1 Film thickness measuring means and exposure means for exposing the peripheral edge of the substrate; Is a substrate processing unit equipped with A deformed singular rim was formed on a part of the circumferential rim Board rotation Holding means for holding, and a substrate held by the holding means position And a detection unit for detecting a predetermined region included in a region where a substrate pattern is not formed is specified as a measurement region Measurement Area identification means; An exposure area specifying means for specifying an exposure area, and a drive mechanism for controlling the film thickness measuring means to measure the film thickness of the measurement area and for controlling the exposure means to perform exposure processing of the exposure area. When, The detection means includes a substantially radial direction with respect to a rotation center of the holding means. A line sensor for detecting a peripheral portion of the substrate held by the holding means; While rotating the substrate by the holding means , Distance acquisition means for acquiring distance information from the rotation center of the holding means to the peripheral edge of the substrate a plurality of times; Rotational position acquisition means for acquiring the rotational position of the holding means; The distance acquisition means But From the acquired plurality of distance information to the holding means Retained Calculate the substrate center position of the substrate In addition, the rotational position acquisition unit acquires the distance information in the specific peripheral portion included in the plurality of distance information acquired by the distance acquisition unit and the distance acquisition unit acquires the distance information in the specific peripheral portion. From the rotation position, the position of the specific peripheral edge portion of the substrate held by the holding means is calculated. A calculating means, Based on the substrate center position calculated by the calculation means and the position of the specific peripheral edge, the measurement area specifying means specifies the measurement area, the exposure area specifying means specifies the exposure area, and the driving mechanism. However, based on the substrate center position calculated by the calculation unit and the position of the specific peripheral portion, the film thickness measurement unit performs film thickness measurement and the exposure unit performs exposure processing. It is characterized by that.
[0009]
The invention described in claim 2 is described in claim 1. Substrate processing unit The measurement area is an area having a width from the peripheral edge of the substrate toward the center of the substrate by a predetermined distance.
[0017]
DETAILED DESCRIPTION OF THE INVENTION
<1. Overall configuration of the device>
FIG. 1 is a perspective view showing an overall outline of a substrate processing apparatus 1 according to an embodiment of the present invention, and FIG. 2 is a plan view showing a schematic configuration of the substrate processing apparatus 1. The substrate processing apparatus 1 is a substrate processing apparatus (so-called coater & developer) that performs resist coating processing and development processing on a substrate W, and is roughly configured to include an indexer ID and a unit arrangement unit MP.
[0018]
The indexer ID includes a transfer robot TF and a mounting stage 15. Four carriers C can be arranged and placed on the placement stage 15 along the horizontal direction. Each carrier C is provided with a multi-stage storage groove, and a single substrate W can be stored in each groove in a horizontal posture (main surface along a horizontal plane). Accordingly, a plurality of substrates W (for example, 25 sheets) can be stored in each carrier C in a state of being stacked in a horizontal posture at a predetermined interval in multiple stages.
[0019]
The transfer robot TF includes a single transfer arm, and the transfer arm can be moved up and down in the height direction, rotated, and moved forward and backward in the horizontal direction. Further, the transfer robot TF itself moves along the arrangement direction of the carrier C, whereby the transfer arm can be moved horizontally along the arrangement direction of the carrier C. That is, the transfer robot TF can move the transfer arm three-dimensionally.
[0020]
By such an operation of the transfer robot TF, the indexer ID takes out the unprocessed substrate W from the carrier C that can store a plurality of substrates W, passes it to the unit placement unit MP, and has processed it from the unit placement unit MP. The substrate W can be received and stored in the carrier C.
[0021]
In the unit arrangement unit MP, a plurality of processing units that perform predetermined processing on the substrate W are arranged in a two-row configuration. That is, two coating processing units SC are arranged in the front side row in FIG. 1 of the unit arrangement unit MP. The coating processing unit SC is a so-called spin coater that applies a uniform resist by dropping a photoresist onto the main surface of the substrate while rotating the substrate W.
[0022]
Further, two development processing units SD are arranged at the same height position as the coating processing unit SC in the rear row of the unit arrangement unit MP in FIG. The development processing unit SD is a so-called spin developer that performs development processing by supplying a developer onto the exposed substrate W. The coating processing unit SC and the development processing unit SD are arranged to face each other with the conveyance path 14 therebetween.
[0023]
Above each of the two coating processing units SC and the two development processing units SD, a heat treatment unit group 13 is arranged with a fan filter unit (not shown) interposed therebetween (for convenience of illustration, the heat treatment unit group is shown in FIG. 13 and a substrate processing unit 11 to be described later are omitted). The heat treatment unit group 13 includes a so-called hot plate that heats the substrate W to raise the temperature to a predetermined temperature and cools the substrate W to lower the temperature to the predetermined temperature and maintains the substrate W at the predetermined temperature. A so-called cool plate is incorporated. The hot plate includes an adhesion strengthening unit that performs an adhesion strengthening process on the substrate W before the resist coating process and a post-exposure bake unit that performs a baking process on the substrate after the exposure.
[0024]
As shown in FIG. 1, a substrate processing unit 11 that detects edge portions of the substrate W and performs edge exposure and film thickness measurement is arranged at one corner of the heat treatment unit group 13. Although details of the substrate processing unit 11 will be described later, a device group for detecting the edge of the substrate W, a peripheral exposure function for exposing the peripheral region of the substrate W coated with a resist, And a film thickness measuring function for measuring the film thickness of a resist film which is a coated film. The arrangement position of the substrate processing unit 11 is not limited to the position illustrated in FIG.
[0025]
A transport robot TR is disposed on the transport path 14 sandwiched between the coating processing unit SC and the development processing unit SD. The transfer robot TR includes two transfer arms, and the transfer arm can be moved up and down along the vertical direction, rotated in the horizontal plane, and moved forward and backward in the horizontal plane. Thus, the transfer robot TR delivers the substrate W to and from the processing units arranged in the unit arrangement unit MP while delivering the substrate W to and from the transfer robot TF with the indexer ID. It can be circulated and conveyed. The transport robot TR also has a role of transporting the resist-coated substrate W to the substrate processing unit 11 and receiving the substrate W after exposure or film thickness measurement from the substrate processing unit 11 and transporting it to a predetermined position. Yes.
[0026]
FIG. 3 is a block configuration diagram of the substrate processing apparatus 1 and its control system according to the present embodiment. The substrate processing apparatus 1 executes inspection processes such as coating, developing, and film thickness measurement under the control of the controller 10. Further, the controller 10 performs various arithmetic processes for detecting the edge of the substrate W.
[0027]
The controller 10 is a main body unit and includes a CPU that performs arithmetic processing, a ROM, a RAM, a hard disk, and the like, and control software is stored in the ROM or hardware.
[0028]
Further, on the side surface of the substrate processing apparatus 1, an operation unit 16 for operator operation and a monitor 17 for displaying operation guidance and menus are provided. The controller 10 controls the substrate processing apparatus 1 according to a processing procedure based on recipe data recorded on a hard disk or the like.
[0029]
<2. Configuration of substrate treatment unit>
4 is a diagram schematically showing a configuration when the substrate processing unit 11 is viewed from above, and FIG. 5 is a diagram schematically showing a configuration when the substrate processing unit 11 is viewed from the side. As shown in FIG. 4 or 5, the substrate processing unit 11 is a spin chuck 21 that is a holding unit that holds the substrate W, a rotation driving unit 22 that is a rotation driving unit of the spin chuck 21, and an exposure unit. The exposure apparatus 23 includes a film thickness measuring device 24 that is a film thickness measuring unit, an XY driving mechanism 25 that is a driving unit, and a line sensor 26 that is an edge detecting unit.
[0030]
As shown in FIG. 5, the spin chuck 21 is provided at the upper end of the rotation shaft 21 c, and the rotation shaft 21 c is driven by the rotation drive unit 22, thereby rotating around the rotation center axis R in the substantially vertical direction. It can be rotated. Thereby, the substrate W is driven to rotate about the rotation center axis R by driving the rotation driving unit 22 in a state where the substrate W is adsorbed on the upper surface of the spin chuck 21. The adsorption of the substrate W is performed using a vacuum suction force provided by a suction pump (not shown) through the air flow paths 21a and 21b. Loading of the substrate W onto the spin chuck 21 and discharge of the substrate W from the spin chuck 21 are performed by the transfer robot TR.
[0031]
The exposure apparatus 23 includes a first light source unit (not shown), an exposure head unit 23a, and an illuminance sensor 23b. For example, a mercury lamp unit is used as the first light source unit. The exposure head unit 23a selectively irradiates the surface of the substrate W of the spin chuck 21 with exposure light provided from the first light source unit via a built-in lens (not shown), and the substrate W coated with a resist. The edge region is exposed. The illuminance sensor 23b is used to measure the amount of light emitted from the exposure head portion 23a to the substrate W.
[0032]
In the present embodiment, the first light source unit is fixedly provided in the substrate processing unit 11, and the exposure head unit 23a is provided so as to be movable in the XY direction by an XY drive mechanism 25 described later. For this reason, the exposure light provided by the first light source unit is provided from the first light source unit to the exposure head unit 23a via a first optical fiber (not shown). The illuminance sensor 23b is also fixedly provided in the substrate processing unit 11.
[0033]
As described above, the substrate processing unit 11 performs the exposure of the edge region of the substrate W. In the present embodiment, the edge region is exposed by performing exposure processing of the edge region and performing development processing in a later process. This prevents particles from being generated from the edge portion in other processing steps.
[0034]
The film thickness measurement device 24 includes a second light source unit (not shown), an optical head unit 24a, and a measurement processing unit (not shown). For example, a halogen lamp unit is used as the second light source unit. The optical head unit 24a selectively irradiates the surface of the substrate W held by the spin chuck 21 with the film thickness measuring light provided from the second light source unit, and the substrate W of the film thickness measuring light. The reflected light from is received. The measurement processing unit measures the film thickness of the resist film provided on the surface of the substrate W based on the reflected light received by the optical head unit 24a.
[0035]
In the present embodiment, the second light source unit and the measurement processing unit are fixedly provided in the substrate processing unit 11, and the optical head unit 24a is provided so as to be movable in an XY manner by an XY drive mechanism 25 described later. ing. For this reason, the light for film thickness measurement given by the second light source unit is given from the second light source unit to the optical head unit 24a via the second optical fiber (not shown) and received by the optical head unit 24a. The reflected light is given from the optical head unit 24a to the measurement processing unit via a third optical fiber (not shown). Alternatively, as a modification, the measurement processing unit may be provided integrally with the optical head unit 24 a and moved to the XY drive mechanism 25 by XY. In this case, the third optical fiber can be omitted.
[0036]
In the present embodiment, the film thickness measurement device 24 configured as described above measures the film thickness of the edge region of the substrate W as an example of the measurement region. In the edge region of the substrate W, there is a region where no pattern is formed. Therefore, the film thickness is measured at the edge portion where this pattern is not formed.
[0037]
The XY drive mechanism 25 includes an X screw shaft 25a, an X rotation drive unit 25b that rotates the X screw shaft 25a, a Y screw shaft 25c, a Y rotation drive unit 25d that rotates the Y screw shaft 25c, and a first And second movable bases 25e and 25f.
[0038]
The X screw shaft 25a and the Y screw shaft 25b are provided along the X and Y directions that are parallel to the substrate W held by the spin chuck 21 and orthogonal to each other. The first movable base 25e is screwed to the X screw shaft 25a, and is moved forward and backward in the X direction as the X screw shaft 25a is rotated forward and backward. The second movable base 25f is screwed to the Y screw shaft 25c, and is moved forward and backward in the Y direction as the X screw shaft 25c is rotated forward and backward.
[0039]
In addition, the X screw shaft 25a, the X rotation driving unit 25b, and the first movable base 25e are integrated with the second movable base 25e as the second movable base 25e is moved back and forth in the Y direction. Moved in the direction. Accordingly, the X movable shaft 25a and the Y rotational shaft 25c are driven forward and backward by the X rotational driving unit 25b and the Y rotational driving unit 25d, so that the first movable base 25e is two-dimensionally within the XY plane parallel to the substrate W. Moved to.
[0040]
The first movable base 25e holds the exposure head portion 23a of the exposure device 23 and the optical head portion 24a of the film thickness measuring device 24. For this reason, the exposure head portion 23a and the optical head portion 24a are driven two-dimensionally by the XY drive mechanism 25, thereby moving the exposure light irradiation position and the film thickness measurement position on the substrate W two-dimensionally. can do.
[0041]
The line sensor 26 is provided so as to partially sandwich the peripheral edge of the substrate W held by the spin chuck 21 from above and below, and detects the position of the peripheral edge of the sandwiched substrate W. More specifically, the line sensor 26 includes a plurality of optical sensors (not shown) arranged in a line along the arrow L direction (FIG. 4). The arrow L direction is a direction passing through the rotation center axis R on a plane substantially perpendicular to the rotation center axis R, that is, a radial direction with respect to the rotation center axis R. The distance from the rotation center axis R of the peripheral edge of the substrate W is detected by detecting how many of the plurality of optical sensors from the rotation center axis R side detect the substrate W. Is done.
[0042]
Therefore, the positional relationship between the rotation axis of the spin chuck 21 and the center of the substrate W, for example, the rotation center axis R, by rotating the substrate W by the rotation drive unit 22 while detecting the peripheral edge of the substrate W by the line sensor 26. It is possible to detect the eccentric position of the center of the substrate W with respect to the substrate, and it is possible to detect the position of the substrate W held on the spin chuck 21 based on the positional relationship.
[0043]
<3. Detection of substrate center and specific peripheral edge>
Next, processing for calculating the center position of the substrate W held on the spin chuck 21 based on the detection information of the line sensor 26 described above will be described. FIG. 6 is a functional block of the controller 10 and particularly illustrates functions related to the center position calculation processing of the substrate W. In the figure, a distance acquisition unit 101, a calculation unit 102, an area specifying unit 103, and an exposure area specifying unit 104 are functions realized by using various hardware resources when the control software of the controller 10 is executed. .
[0044]
As described above, the line sensor 26 detects the distance from the rotation center axis R of the peripheral edge of the substrate W (this distance is hereinafter referred to as an edge distance). The distance acquisition unit 101 acquires the edge distance from the line sensor 26 at a predetermined interval while the substrate W is rotated once by the spin chuck 21. That is, the edge distance is acquired a plurality of times while the substrate W rotates once.
[0045]
If the substrate center of the substrate W held on the spin chuck 21 is exactly the same position as the rotation center axis R of the spin chuck 21, the edge distance acquired by the distance acquisition unit 101 a plurality of times is the specific peripheral edge. It becomes constant except for the portion (the specific peripheral portion will be described later). However, as described above, since the holding position of the substrate W with respect to the spin chuck 21 may be slightly shifted, in this case, the edge distance acquired a plurality of times has variations. .
[0046]
Therefore, the distance acquisition unit 101 sends edge distance data acquired a plurality of times to the calculation unit 102. The calculating means 102 calculates the eccentric distance of the substrate W arranged eccentrically from a plurality of edge distance data. Although this calculation method is not particularly limited, for example, it can be obtained by a difference from the radius of the substrate W at the maximum value or the minimum value of the edge distance. Or you may make it take the average of the difference calculated | required from these maximum values and minimum values.
[0047]
Further, the calculation means 102 determines the rotation angle of the spin chuck 21 from the rotation drive unit 22 (this rotation angle is determined as a relative rotation angle with respect to a reference point in the apparatus, for example, for a specific point on the spin chuck 21). Can be entered. Therefore, since the calculation means 102 can input the rotation angle of the substrate W at each detection time while the line sensor 26 detects the edge distance, the relationship between the rotation position of the substrate W and the edge distance is given. It is possible to get data on the above. Thereby, the calculation means 102 can grasp the center position of the substrate W held on the spin chuck 21 from the calculated eccentric distance and the acquired rotation angle data.
[0048]
Furthermore, the calculation means 102 can detect the crystal direction of the substrate W by detecting the specific peripheral edge. FIG. 7 is a plan view of the substrate W on which the orientation flat 31 is formed as the specific peripheral portion, and FIG. 8 is a plan view of the substrate W on which the notch 32 is formed as the specific peripheral portion.
[0049]
Since the orientation flat 31 and the notch 32 are formed to have a specific relationship with the crystal direction of the substrate W, each processing unit of the substrate processing apparatus 1 detects the specific peripheral portion of the substrate W. It is possible to perform processing in consideration of the crystal direction.
[0050]
Since the specific peripheral edge portion is formed on the substrate W, the edge distances in the specific peripheral edge portion are included in the plurality of edge distances acquired by the distance acquisition unit 101. In other words, although the edge position data is a value close to the radius of the substrate W in the portions other than the specific peripheral portion, although the slight variation occurs due to the deviation of the center position, the portions having greatly different values are unique. It is detected as a peripheral part. Therefore, the calculation means 102 can detect the orientation flat formation position or the notch formation position of the substrate W by acquiring the rotation angle at which this specific peripheral edge is detected. The orientation flat position and the notch position are detected for a continuous time. For example, the center position of the orientation flat or the notch can be grasped by taking a time in the middle of these times. Further, when the orientation flat or notch has a shape as shown in FIGS. 7 and 8, it is also possible to grasp the position where the edge distance is shifted most as the center position of the orientation flat or notch.
[0051]
When the orientation flat position or the notch position is detected in this way, as described above, these specific peripheral portions are formed with a specific relationship with the substrate crystal direction, so that the calculation means 102 determines the detection position. It is possible to calculate the crystal direction of the substrate as a reference.
[0052]
When the calculation means 102 calculates the center position and the specific peripheral edge position of the substrate W, the area specifying means 103 specifies the film thickness measurement area based on this information. As described above, in the present embodiment, the film thickness measurement region is a region near the peripheral portion of the substrate W in order to measure the film thickness of the edge portion. Specifically, this is a region having a width from the peripheral edge of the substrate W toward the center of the substrate by a predetermined distance. For example, the predetermined distance may be a distance that allows the film thickness measurement region to be selected as a region that does not overlap the pattern formed on the substrate W. Alternatively, in order to perform more reliable measurement, an area excluding the vicinity of the substrate edge and the vicinity of the boundary with the pattern formation area may be selected. Further, the region specifying means 103 selects a region suitable for film thickness measurement in consideration of the crystal direction of the substrate.
[0053]
When the region specifying unit 103 specifies the film thickness measurement region, this specifying information is sent to the film thickness measuring device 23 and the XY drive mechanism 25. As a result, the XY drive mechanism 25 moves the film thickness measuring device 23 to the target position, and the film thickness measuring device 23 measures the film thickness at the edge portion of the substrate W that is the film thickness measuring region.
[0054]
Further, when the calculating means 102 calculates the center position and the specific peripheral edge position of the substrate W, the exposure area specifying means 103 specifies the exposure area based on this information. As described above, in this embodiment, since the edge region is exposed, the exposure region is a region near the peripheral edge of the substrate W. Specifically, it is a region having a width from the peripheral edge of the substrate W toward the center of the substrate by a predetermined distance. Like the film thickness measurement region, the predetermined distance is a pattern in which an exposure region is formed on the substrate. Is selected so that it does not overlap with any other area. In order to perform more reliable measurement, an area excluding the vicinity of the substrate edge and the vicinity of the boundary with the pattern formation area may be selected.
[0055]
When the exposure position specifying means 104 specifies the exposure area, this specifying information is sent to the exposure device 24 and the XY drive mechanism 25. Thereby, the XY drive mechanism unit 25 moves the exposure device 24 to a target position, and the exposure device 24 performs an exposure process at the edge portion of the substrate W that is an exposure region.
[0056]
<4. Process flow>
Next, the operation of the substrate processing unit 11 will be described with reference to the flowchart of FIG. The substrate W is transported into the substrate processing unit 11 by the transport robot TR, and the substrate W is sucked and held by the spin chuck 21 (step S1).
[0057]
Next, the spin chuck 21 rotates once in response to an instruction from the controller 10. As a result, the substrate W held on the spin chuck 21 also rotates once, and a plurality of edge distances are detected by the line sensor 26 (step S2). The edge distance data detected a plurality of times by the line sensor 26 is sent to the calculation means 102.
[0058]
Next, the calculation means 102 performs the above-described processing from a plurality of edge distance data, and calculates the center position of the substrate W and the position of the specific peripheral edge. That is, the eccentric position of the substrate W and the crystal direction are obtained by calculation (step S3).
[0059]
In step S3, if the position of the specific peripheral edge, that is, the orientation flat position or the notch position is not detected (NO in step S4), the process proceeds to step S8, an alarm is issued, and the measurement is stopped. To do.
[0060]
If the position of the specific peripheral edge is detected in step S3 (YES in the determination in step S4), it is further determined whether the substrate center and the crystal direction are calculated (step S5).
[0061]
If the substrate center and the crystal direction are not calculated (NO in step S5), the process proceeds to step S8, an alarm is issued, and the measurement is stopped.
[0062]
When the substrate center and the crystal direction are calculated (YES in step S5), the calculation unit 103 sends information regarding the calculated substrate center and crystal direction to the region specifying unit 103, and the region specifying unit 103 causes the film A thickness measurement region is identified. Then, information regarding the film thickness measurement region is sent to the XY drive unit 25 and the film thickness measurement device 24, and the film thickness measurement of the edge region is performed (step S6).
[0063]
The process in step S6 is repeated until the film thickness measurement is completed at a predetermined point in the film thickness measurement region. When the measurement is completed at all points (YES in step S7), the process ends.
[0064]
Through the above processing, the film thickness measurement process is performed on the substrate W. However, the data used for the detection of the edge region is not used only for the film thickness measurement process, as described above. When performing edge exposure processing, it is also used for specifying an exposure region.
[0065]
Therefore, the substrate processing apparatus 1 of the present embodiment not only accommodates the exposure apparatus 23 that performs edge exposure and the film thickness measurement apparatus 24 that performs film thickness measurement in the same unit, but also makes the apparatus compact. Since the same device is used as the device for detecting the edge portion of the substrate W, it is possible to further reduce the size of the device.
[0066]
In addition, it is possible to shorten the processing steps by performing edge exposure and film thickness measurement using the information on the substrate center and the specific peripheral edge obtained by the common measurement process and calculation process.
[0067]
In the present embodiment, since the exposure apparatus 23 and the film thickness measuring apparatus 24 are controlled by the same XY drive mechanism 25, it is possible to reduce the size and cost of the apparatus from this point. .
[0068]
When the film thickness is measured by the above processing, the controller 10 determines whether or not the measured value is within a predetermined required level, for example, a specified value range. If it is determined that the film thickness of the resist film is not within the predetermined required level, the processing conditions for forming the resist film on the substrate W are changed.
[0069]
As a control mode of the controller 10 when changing the processing conditions, an automatic change mode and a manual change mode are provided. The automatic change mode is a mode in which the controller 10 automatically changes the processing condition based on the measured value of the resist film by the substrate processing unit 11.
[0070]
On the other hand, in the manual change mode, the resist film thickness value measured by the substrate processing unit 11 is output to the controller 10 via the monitor 17 or the like, and the processing condition is determined by the user based on the output film thickness value. This change mode is a mode in which the change content is determined and the change content is input to the apparatus 1. The change content is input via the operation unit 16 or the like. When the change content is input, the controller 10 reflects the change content in the processing conditions. Mode switching between the automatic change mode and the manual change mode is performed via the operation unit 16.
[0071]
As described above, the controller 10 determines whether or not the processing conditions need to be changed based on the measurement result of the film thickness value of the resist film, and the change contents when the change is necessary. If the processing conditions need to be changed, a resist film is formed in accordance with the changed processing conditions, the thickness of the resist film is measured, and the necessity of changing the processing conditions is reviewed. The process is repeated until the film thickness value satisfies a predetermined required level.
[0072]
As processing conditions to be changed based on the measurement result of the film thickness of the resist film, the spin rotation number when the resist is spin-coated on the substrate W is assumed, but this is merely an example, and the processing to be changed The conditions may include other conditions such as a pre-bake temperature described later. In the above embodiment, the film thickness of the substrate W is measured in the edge region of the substrate W. However, the present invention is not limited to this. For example, the substrate center and the crystal orientation are used as a reference. As an example, a region in the circuit board W on which an alignment mark or the like is not formed may be specified as a film thickness measurement region by a region specifying unit, and the film thickness of the region may be measured.
[0073]
【The invention's effect】
As described above, according to the first aspect of the present invention, since the peripheral portion of the substrate is detected and the film thickness of the substrate is measured, the measurement region can be easily detected and specified. Thereby, it is possible to simplify a film thickness measurement process.
[0074]
Claim 1 In the described invention, highly accurate film thickness measurement processing is possible in a region where no pattern is formed.
[0075]
Claim 1 In the described invention, since the center position of the substrate is measured by measuring the distance between the peripheral portion of the substrate and the rotation holding means of the substrate using a line sensor, the peripheral portion of the substrate is not subjected to processing such as image analysis. Can be detected. Thereby, it is possible to eliminate the need for expensive hardware for performing a camera and image analysis.
[0076]
Claim 1 In the described invention, since the specific peripheral edge formed on the peripheral edge of the substrate is detected, the crystal direction of the substrate can be detected.
[0077]
Claim 1 In the described invention, since edge exposure and film thickness measurement are performed based on the detected information about the peripheral edge of the substrate, it is possible to reduce the size and cost of the apparatus.
[0078]
Claim 1 In the described invention, since the film thickness measuring device and the exposure device are controlled by the same drive mechanism, it is possible to further reduce the size and cost of the device.
[Brief description of the drawings]
FIG. 1 is a perspective view showing an overall outline of a substrate processing apparatus according to an embodiment of the present invention.
2 is a plan view showing a schematic configuration of the substrate processing apparatus of FIG. 1. FIG.
3 is a block configuration diagram of the substrate processing apparatus of FIG. 1 and its control system. FIG.
FIG. 4 is a diagram schematically showing a configuration when a substrate processing unit is viewed from above.
FIG. 5 is a diagram schematically showing a configuration when the substrate processing unit is viewed from the side.
FIG. 6 is a functional block diagram of a controller.
7 is a view showing an orientation flat provided on a substrate W. FIG.
FIG. 8 is a view showing notches provided in a substrate W. FIG.
FIG. 9 is a flowchart showing a processing procedure using the substrate processing apparatus of FIG. 1;
[Explanation of symbols]
1 Substrate processing equipment
10 Controller
11 Substrate processing unit
21 Spin chuck
22 Rotation drive
23 Peripheral exposure equipment
23a Exposure head
23b Illuminance sensor
24 Film thickness measuring device
25 Optical head
26 Line sensor
W substrate

Claims (2)

A substrate processing unit on which a film thickness measuring means (24) and an exposure means (23) for exposing the peripheral edge of the substrate are mounted,
Holding means (21) for rotating and holding the substrate on which the deformed peripheral edge is formed in a part of the circumferential edge ;
Detection means for detecting the position of the substrate held by the holding means;
Measurement area specifying means (103) for specifying a predetermined area included in the area where the pattern of the substrate is not formed as a measurement area;
Exposure area specifying means (104) for specifying an exposure area;
A drive mechanism (25) for controlling the film thickness measurement means to measure the film thickness of the measurement area, and for controlling the exposure means to perform exposure processing of the exposure area;
With
The detection means includes
A line sensor (26) for detecting a peripheral edge of the substrate held by the holding means along a substantially radial direction with respect to the rotation center of the holding means;
While rotating the substrate by the holding means, a plurality of times acquired for distance acquisition unit distance information to the peripheral portion of the substrate from the rotation center of the holding means (101),
Rotational position acquisition means (22) for acquiring the rotational position of the holding means;
Calculates a substrate center position of the substrate held by the holding means from the plurality of distance information the distance acquisition section, the distance in the specific peripheral unit included in a plurality of distance information the distance acquisition section From the information and the rotational position acquired by the rotational position acquisition unit when the distance acquisition unit acquires distance information in the specific peripheral part, the position of the specific peripheral part of the substrate held by the holding unit is determined. A calculating means (102) for calculating;
With
Based on the substrate center position and the position of the specific peripheral edge calculated by the calculation means, the measurement area specifying means specifies the measurement area, and the exposure area specifying means specifies the exposure area,
The drive mechanism causes the film thickness measurement unit to perform film thickness measurement and the exposure unit to perform exposure processing based on the substrate center position and the position of the specific peripheral edge calculated by the calculation unit, respectively. A featured substrate processing unit. The substrate processing unit according to claim 1,
The substrate processing unit, wherein the measurement region is a region having a width from the peripheral edge of the substrate toward the center of the substrate by a predetermined distance.

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