JP4335560B2 - Vacuum plasma processing equipment - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a vacuum plasma processing apparatus for performing vacuum plasma processing such as plasma CVD, dry etching and sputtering on a substrate. Related To do.
[0002]
[Prior art]
Conventionally, in a plasma CVD apparatus or the like, a reactive gas is supplied to a gas blowing type electrode (hereinafter referred to as “electrode”) in a vacuum plasma processing apparatus, and this is decomposed and reacted in a plasma atmosphere (substrate to be processed). Is made to form a thin film. At this time, the main flow of the reaction gas blown out from the electrode is perpendicular to the surface of the substrate (see, for example, Patent Document 1).
[0003]
[Patent Document 1]
Japanese Patent Laid-Open No. 2001-120985 (FIGS. 3 and 7)
[0004]
[Problems to be solved by the invention]
However, in the invention of Patent Document 1 described above, when the gap between the electrode and the substrate is reduced in order to increase the film forming speed, the gas blown out from the gas blowing holes reaches the substrate surface without being sufficiently diffused. However, a film pattern (spot color, local thick film or powder) is generated on the surface of the substrate facing the gas blowing holes, and there is a limit in reducing the distance between the electrode and the substrate.
[0005]
In addition, the conventional electrode is provided with a gas blowing hole in the gas pipe located outside the substrate size, which wastes gas and increases the number of work steps for processing the gas blowing hole. In addition, there is a problem that the manufacturing cost increases.
[0006]
The present invention has been made in view of the above circumstances, and an electrode capable of improving the film forming speed by reducing the interval between the electrode and the substrate and improving the film quality. Vacuum plasma processing apparatus equipped with The purpose is to provide.
Another object of the present invention is to provide an electrode that can effectively use gas and can reduce the manufacturing cost. Vacuum plasma processing apparatus equipped with Is to provide.
[0007]
[Means for Solving the Problems]
The present invention employs the following means in order to solve the above problems.
That is, according to claim 1 Vacuum plasma processing equipment According to the present invention, the gas is supplied between the heater cover supporting the substrate to be processed and the film forming cover, and the gas is supplied into the space surrounded by the heater cover and the film forming cover, and the electrode has a function as an electrode. And an electrode having an upper gas header, a lower gas header, and a plurality of gas pipes connected between the upper gas header and the lower gas header With In order to blow out the gas into the space, a gas blowing hole provided in the gas pipe is drilled on the side opposite to the side where the substrate to be processed is located, and the gas blown out from the gas blowing hole is The film flows toward the film-forming cover, diffuses in a space surrounded by the film-forming cover and the heater cover, and then reaches the process-side surface of the substrate to be processed.
[0008]
like this Vacuum plasma processing equipment According to the above, the gas blowing holes are provided so that the main flow of gas is directed in the direction away from the substrate to be processed, that is, in the direction of the film forming cover. That is, the gas is once guided toward the film forming cover and then the gas is guided toward the substrate to be processed.
[0009]
Claim 2 Vacuum plasma processing equipment According to the present invention, the gas is supplied between the heater cover supporting the substrate to be processed and the film forming cover, and the gas is supplied into the space surrounded by the heater cover and the film forming cover, and the electrode has a function as an electrode. And an electrode having an upper gas header, a lower gas header, and a plurality of gas pipes connected between the upper gas header and the lower gas header With In order to blow out the gas into the space, the gas blowout hole provided in the gas pipe is such that the main flow of the gas blown out from the gas blowout hole is the surface of the gas pipe adjacent to the gas blowout hole on the substrate side. And / or it is perforated so that the tangent drawn toward the surface at the side of a film-forming cover may be followed.
[0010]
like this Vacuum plasma processing equipment According to the present invention, the gas blowout holes are arranged so that the main flow of the gas blown out from the gas blowout holes follows a tangent line drawn toward the substrate side surface and / or the film forming cover side surface of the adjacent gas pipe. Is provided.
[0011]
Claim 3 Vacuum plasma processing equipment According to the above, the gas blowing holes are provided at an equal pitch with respect to the one gas pipe, and the gas blowing holes of the gas pipe adjacent to the one gas pipe are the gas provided in the one gas pipe. It is characterized by being provided with a 1/2 pitch offset from the blowing holes.
[0012]
like this Vacuum plasma processing equipment According to this, the gas blowing holes are arranged in a staggered manner.
[0013]
Claim 4 Vacuum plasma processing equipment According to the present invention, the length in the arrangement direction of the gas pipes is shorter than the length in the direction orthogonal to the arrangement direction.
[0014]
like this Vacuum plasma processing equipment Accordingly, the length in the arrangement direction of the gas pipes (that is, the length in the width direction when viewed from the substrate to be processed) is reduced.
[0015]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, according to the present invention Vacuum plasma processing equipment The first embodiment will be described with reference to the drawings.
According to the invention Vacuum plasma processing equipment Is used in a cluster type vacuum processing apparatus 801 as shown in FIG. 9, for example.
As shown in FIG. 9, the cluster type vacuum processing apparatus 801 includes a common transfer chamber 830 as a carriage rotation chamber in the center, and a load chamber 810, an unload chamber 820, and five film forming chambers (vacuums) so as to surround the periphery. Processing chambers) 870A to 870E and a spare chamber 880 are arranged. Each of these chambers 810, 820, 870A to 870E, 880 communicates with the carriage movement connection chambers 840A to 840H via gate valves (not shown), respectively, and each carriage movement connection chamber 840A to 840H communicates with the common transfer chamber 830. Each communicates.
[0016]
The load chamber 810 is provided with two transfer devices 806A and 806B, the unload chamber 820 is also provided with two transfer devices 806C and 806D, and the common transfer chamber 830 is provided with two transfer devices 806E and 806F. In the entire apparatus, a total of at least six transfer apparatuses 806A to 806F are arranged in various places.
[0017]
As shown in FIG. 10, in the above-described film forming chambers 870A to 870E, a fixed film forming unit 912, and substrate heating heaters 913 and 913 fixedly disposed on both sides of the film forming unit 912, respectively. Is arranged. Further, between the film forming unit 912 and the substrate heating heater 913, there are a glass substrate (substrate to be processed) 914, a heater cover 915, an electrode 916 and the like which are transferred to a predetermined position in the film forming chamber by a substrate transfer carriage described later. Has been placed.
[0018]
The film forming unit 912 is configured as shown in FIG. That is, the film forming unit 912 includes a film forming unit temperature control heater or cooler (hereinafter referred to as a temperature control unit) 917 disposed so as to stand against the center, and a film forming cover (integrated type) on both sides of the temperature control unit 917. (Also referred to as a film-forming unit cover, hereinafter referred to as an adhesion-preventing plate) 918, an electrode 916 disposed through 918, a positioner (substrate peripheral frame) 919 disposed in a frame portion of the electrode 916, and the positioner 919 The exhaust gas cover 920 is disposed so as to surround the temperature control unit 917, the deposition preventing plate 918, and a part of the electrode 916, and supports the glass substrate 914 disposed on the back side of the electrode 916. A heater cover 915 and an exhaust pipe (exhaust means) 921 for exhausting the exhaust gas cover 920 are provided.
[0019]
The glass substrate 914 is supported by a heater cover 915 having, for example, two bolt receivers 922 at the top and bottom. The heater cover 915 is brought into close contact with the positioner 919 when the bolt 924 is rotated by the drive motor 923. Further, the substrate heating heater 913 moves as indicated by an arrow A in FIG. The electrode 916 is a gas blow-out integrated type, and is composed of a pipe-shaped frame 916a and a pipe 916b having a plurality of gas blow-out holes arranged in parallel with the frame 916a in a ladder shape.
[0020]
FIG. 12 shows a state in which the substrate is in the carry-in state by the transfer device on the left side from the center line L in the standing direction, and the glass substrate 914 is set on the heater cover 915 on the right side from the center line L, and the carriage has been moved. Until the start of film formation, the heater cover 915 is further advanced to bring the glass substrate 914 into close contact with the positioner 919. The glass substrate 914 is transferred from a preliminary carriage chamber (not shown) to a film forming chamber 911 by a substrate transfer carriage 925 as shown in FIG. Note that reference numeral 926 in FIG. 12 indicates a maintenance door.
[0021]
FIG. 1 relates to this embodiment. Vacuum plasma processing equipment (A) is a partial cross-sectional view, and (b) is a partial vertical cross-sectional view. . Electric The pole 10 is disposed between the heater cover 11 and the deposition preventive plate 12 that support the substrate to be processed K, and supplies the reaction gas into the space S surrounded by the heater cover 11 and the deposition preventive plate 12. It has a function as an electrode.
The electrode 10 includes a gas supply pipe (not shown), an upper gas header 10a and a lower gas header 10b connected to the gas supply pipe, and a plurality of gases connected between the upper gas header 10a and the lower gas header 10b. Tube 10c. Reference numeral 11 a in the drawing is a substrate pressing tool for holding the substrate to be processed K on the heater or bar 11. Further, symbol G in the figure indicates a gap between the tip of the deposition preventing plate 12 and the substrate pressing member 11a provided in the heater cover 11, and the gas supplied into the space S is discharged. It is a part that becomes a passage.
[0022]
The outer diameter Φ of the gas pipe 10c is, for example, 6 mm to 12 mm, and the pitch P between the gas pipe 10c and the gas pipe 10c is, for example, 1.5 × outer diameter Φ-3 × outer diameter Φ.
The diameter of each gas blowing hole 10d provided in the gas pipe 10c is, for example, 0.3 mm to 0.5 mm, and the pitch P2 between the gas blowing hole 10d and the gas blowing hole 10d is, for example, 0.3 × pitch. P to 1.5 × pitch P.
[0023]
As shown in FIG. Vacuum plasma processing equipment Then, a gas blowing hole 10d provided in each gas pipe 10c is opened toward the opposite side to the substrate K to be processed, that is, toward the deposition preventing plate 12. In other words, the gas blowing hole 10d of the electrode 10 in the present embodiment allows gas to flow in a direction opposite to the direction described in the column of the prior art (on a line parallel to the perpendicular to the substrate K to be processed and opposite to the substrate). It is provided so that the mainstream blows out.
[0024]
As a result, the gas blown out from the gas blowing hole 10d is sufficiently diffused in the space S and then reaches the processing side surface of the substrate K to be processed, so that a uniform film thickness and film quality are formed on the substrate surface. Can be made.
Further, since the gas blowing hole 10d opens toward the opposite side of the substrate to be processed K, even if the electrode 10 is brought closer to the substrate to be processed K, a film pattern does not occur in the film formation. Therefore, the gap (distance) D1 between the gas pipe 10c and the substrate to be processed K can be reduced to 5 mm to 40 mm, preferably 15 mm to 35 mm, the plasma intensity can be increased, the film forming speed can be increased, The film quality can be improved and the film forming unit can be made thinner (smaller).
The gap (distance) D2 between the gas pipe 10c and the deposition preventing plate 12 is desirably about 1 to 6 times D1.
[0025]
Next, according to the present invention with reference to FIG. Vacuum plasma processing equipment The reference embodiment will be described. In this embodiment Vacuum plasma processing equipment Is different from that of the first embodiment in that baffle plates 21 each having a circular arc cross section made of an insulator are provided at positions facing the gas blowing holes 10d of the first embodiment. Since other components are the same as those in the first embodiment described above, description of these components is omitted here, and only the baffle plate 21 will be described.
In addition, the same code | symbol is attached | subjected to the member same as 1st Embodiment.
[0026]
The baffle plate 21 is a plate-shaped member having a circular arc cross section provided at a position where the gas blown out from the gas blowing hole 10d collides, and may be provided for each gas blowing hole 10d. Only one sheet may be provided for all the gas blowing holes 10d of the gas pipe 10c.
As shown in FIG. 2, the gas blown out from the gas blowing hole 10d collides with the concave surface 21a of the baffle plate 21, and then advances along the concave surface 21a. It flows out toward the substrate to be processed K from the gap g formed between the two. The gas is diffused before the gas exits the blowout hole and flows out of the gap g. Further, when the gas flows out of the gap g, the space rapidly expands to promote (promote) the gas diffusion. Will be.
[0027]
Thereby, after the gas blown out from the gas blowing hole 10d is sufficiently diffused, it reaches the surface of the substrate to be processed, so that a uniform film thickness and film quality can be formed on the substrate surface, and the gas The gap (distance) D1 between the tube 10c and the substrate to be processed K can be reduced to 5 mm to 40 mm, preferably 15 mm to 35 mm, the film forming speed can be increased, and the film quality can be improved. Thinning (miniaturization) can be achieved.
In addition, since the flow of gas toward the deposition preventing plate 12 is restricted (suppressed) by the baffle plate 21, the gap (distance) D2 between the gas pipe 10c and the deposition preventing plate 12 can be reduced. Further reduction in thickness (miniaturization) of the film forming unit can be achieved.
At this time, if strong plasma is generated between the baffle plate 21 and the gas pipe 10c, there is a possibility that particles are generated and the film quality may be deteriorated or the film forming speed may be lowered. The gap between the gas pipes 10c is a distance at which plasma is not easily generated, and is preferably 1 mm to 5 mm.
[0028]
3 according to the present invention Vacuum plasma processing equipment A second embodiment will be described. In this embodiment Vacuum plasma processing equipment Are the same as those of the first embodiment described above except for the opening direction of the gas blowing hole 10d of the first embodiment described above, that is, the direction in which the gas blows out. Therefore, description of these components is omitted here, and only the direction in which the gas blowing holes are directed will be described.
In addition, the same code | symbol is attached | subjected to the member same as 1st Embodiment.
[0029]
As shown in FIG. 3, in this embodiment Vacuum plasma processing equipment Then, the gas blowing holes 30d provided in each gas pipe 30c are formed toward the tangential direction of the adjacent gas pipe 30c on the substrate to be processed K side. That is, the main flow of gas is blown out toward the surface of the adjacent gas pipe 30c on the substrate K side.
[0030]
Thereby, after the gas blown out from the gas blowing holes 30d is sufficiently diffused in the space S, it reaches the surface of the substrate to be processed K, so that a uniform film thickness and film quality are formed on the substrate surface. In addition, the gap (distance) D1 between the gas pipe 30c and the substrate to be processed K can be reduced to 5 mm to 40 mm, preferably 15 mm to 35 mm, so that the film forming speed can be increased and the film quality can be improved. Thus, it is possible to reduce the thickness (downsize) of the film forming unit.
Further, since the gas blown out from the gas blowing hole 30d reaches the side of the adjacent gas pipe 30c (which becomes an electrode), that is, the plasma sheath region around the electrode in a short time, powder (particles) is generated. It becomes difficult to realize a high-quality film formation that is more uniform and has fewer defects.
Further, since the main flow of gas is blown toward the surface of the adjacent gas pipe 30c on the substrate K side, the gap (distance) D2 between the gas pipe 10c and the deposition preventing plate 12 is reduced. Therefore, the film forming unit can be further reduced in thickness (downsized).
[0031]
According to the present invention using FIG. Vacuum plasma processing equipment A third embodiment will be described. In this embodiment Vacuum plasma processing equipment Are different from each other only in the opening direction of the gas blowing holes 10d and 30d of the first embodiment and the second embodiment, that is, the direction in which the gas blows out. This is the same as the second embodiment. Therefore, description of these components is omitted here, and only the direction in which the gas blowing holes are directed will be described.
In addition, the same code | symbol is attached | subjected to the member same as 1st Embodiment and 2nd Embodiment.
[0032]
As shown in FIG. 4, in this embodiment Vacuum plasma processing equipment Then, the gas blowing hole 40d provided in each gas pipe 40c is formed toward the tangential direction of the adjacent gas pipe 40c on the adhesion preventing plate 12 side. That is, it is provided so that the main flow of gas is blown out toward the surface of the adjacent gas pipe 40c on the side of the adhesion-preventing plate 12.
[0033]
Thereby, after the gas blown out from the gas blowing holes 40d is sufficiently diffused in the space S, it reaches the surface of the substrate to be processed K, so that a uniform film thickness and film quality are formed on the substrate surface. In addition, the gap (distance) D1 between the gas pipe 40c and the substrate to be processed K can be reduced to 5 mm to 40 mm, preferably 15 mm to 35 mm, so that the film forming speed can be increased and the film quality can be improved. Thus, it is possible to reduce the thickness (downsize) of the film forming unit.
Further, since the gas blown out from the gas blowing hole 30d reaches the side of the adjacent gas pipe 30c (which becomes an electrode), that is, the plasma sheath region around the electrode in a short time, powder (particles) is generated. It becomes difficult to realize a high-quality film formation that is more uniform and has fewer defects.
Further, since the main flow of gas is blown out toward the surface of the adjacent gas pipe 30c on the adhesion preventing plate 12 side, the gap (distance) D1 between the gas pipe 10c and the substrate to be processed K is further reduced. Therefore, the film forming unit can be further reduced in thickness (downsized).
[0034]
According to the present invention with reference to FIG. Vacuum plasma processing equipment A fourth embodiment will be described. In this embodiment Vacuum plasma processing equipment Is different from the gas pipe 30c of the second embodiment described above in its cross-sectional shape. That is, in the second embodiment, the cross-sectional shape of the gas pipe 30c is circular, but in the fourth embodiment, the cross-sectional shape of the gas pipe 50c is oval. Further, since the other components are the same as those in the second embodiment described above, description of these components is omitted here.
In addition, the same code | symbol is attached | subjected to the member same as 2nd Embodiment.
[0035]
As shown in FIG. Vacuum plasma processing equipment Then, the cross-sectional shape of each gas pipe 50c is an ellipse. That is, in each gas pipe 50c, in the cross section, the pipe diameter (short diameter) d1 in the arrangement direction of the gas pipe 50c (or the extending direction of the upper gas header 10a and the lower gas header 10b) is orthogonal to the arrangement direction. It is shorter than the tube diameter (major axis) d2 in the direction. In other words, the pipe diameter d1 in the arrangement direction of the gas pipes 50c is reduced without reducing the cross-sectional area of the flow path. Here, d2 / d1 is, for example, 2-4.
[0036]
By reducing the tube diameter d1, the distance between the gas pipe 50c and the gas pipe 50c, that is, the pitch P described above can be reduced accordingly, so that the number of the gas pipes 50c can be increased, and the electrode plasma Uniformity can be improved and more uniform film formation can be realized.
Further, by increasing the tube diameter (major axis) d2 in the direction perpendicular to the arrangement direction, the conventional passage cross-sectional area is ensured and the gas passage resistance in the gas pipe 50c does not increase, so the gas blowing holes 50d Thus, uniform gas can be blown out, the uniformity of the electrode plasma can be improved, a more uniform film formation can be realized, and the film formation speed can be improved.
[0037]
6 according to the present invention Vacuum plasma processing equipment The reference embodiment will be described. In this embodiment Vacuum plasma processing equipment The above-mentioned conventional Vacuum plasma processing equipment In order to obtain a uniform film thickness and film quality distribution, the size of the electrode is larger than that of the substrate to be processed K, so that the influence of the non-uniform plasma density distribution that easily occurs around the electrode can be produced. The gas pipe 60c ′ that does not come out of the film portion but does not face the substrate K is largely different from the conventional one in that the gas blowing hole 60d is not provided. That is, no gas blowing hole 60d is provided at all in a gas pipe (for example, the gas pipe located on the leftmost side in FIG. 1) that does not face the substrate to be processed K. Since other components are the same as those in the above-described embodiment, description of these components is omitted here.
In addition, the same code | symbol is attached | subjected to the member same as embodiment mentioned above.
[0038]
As shown in FIG. 6, in this embodiment Vacuum plasma processing equipment Then, the substrate K to be processed does not exist between the gas pipe 60c ′ positioned on the outermost side (the leftmost side and the rightmost side in FIG. 6), that is, the heater cover 11 (or the substrate pressing member 11a) described above. The gas pipe 60 ′ is not provided with a gas blowing hole 60d, and is used only as an electrode pipe.
[0039]
This eliminates gas blowout that does not contribute to film formation (or hardly contributes), and can suppress gas waste, thereby enabling effective use of gas and reducing gas consumption. Manufacturing cost can be reduced.
Further, since it is not necessary to provide the gas blowing hole 60d in the gas pipe 60c ′ not facing the substrate to be processed K, the step of processing the hole can be omitted and the manufacturing cost can be reduced. .
[0040]
7 according to the present invention Vacuum plasma processing equipment The fifth embodiment will be described. In this embodiment Vacuum plasma processing equipment The above-mentioned conventional Vacuum plasma processing equipment Is basically the same, but differs greatly from the conventional one in that the pitch between the gas blowing holes and the gas blowing holes is shifted by ½ pitch between adjacent gas pipes. . Since other components are the same as those in the above-described embodiment, description of these components is omitted here.
In addition, the same code | symbol is attached | subjected to the member same as embodiment mentioned above.
[0041]
As shown in FIG. 7, in this embodiment Vacuum plasma processing equipment Then, between one gas blowing hole 70d of one gas pipe 70c and the gas blowing hole 70d adjacent thereto, the gas blowing hole 70d ′ of another gas pipe 70c ′ adjacent to this one gas pipe 70c is positioned. A gas blowing hole is arranged so as to. That is, as shown in FIG. 7, the gas blowing holes are shifted by ½ pitch and are arranged in a staggered manner.
FIGS. 8A and 8B are views of the gas blowing holes provided in the gas pipe as viewed from the front, where FIG. 8A shows the present invention and FIG. 8B shows the conventional one. In FIG. 8, the hatched portion indicates a portion where the gas concentration is low, that is, a region where the gas supply is insufficient (insufficient). Further, the portion other than the hatched portion indicates the diffusion range of the gas blown out from the gas blowing hole when reaching a predetermined distance from the gas blowing hole. 8A, the shape of the hatched portion (that is, the portion where the gas concentration is low) is more complicated than that of FIG. 8B, the region where the gas concentration is low is reduced, and gas diffusion ( It can be seen that (or mixing) is further accelerated.
[0042]
Thereby, after the gas blown out from the gas blowing holes 70d and 70d ′ is sufficiently diffused in the space S, it reaches the surface of the substrate to be processed K, so that a uniform film thickness and film quality are formed on the substrate surface. Can be formed.
[0043]
The present invention is not limited to the above-described embodiment, and can be modified or modified in any way without departing from the technical idea of the present invention.
The gas blowing direction is not limited to FIGS. 1, 3, and 4, and may be any direction as long as the main flow of the gas does not hit the substrate to be processed K perpendicularly.
Further, as shown in FIG. 1, FIG. 3, and FIG. 4, the gas blowing direction need not be a direction orthogonal to the extending direction of the gas pipe. For example, in FIG. It can also be blown out.
Furthermore, it is also possible to combine the gas pipes or the units of holes on the gas pipes that blow out gas in different directions.
[0044]
Furthermore, the gas blowing direction from each gas pipe is not limited to one direction. For example, the gas can be blown out in two directions, that is, the direction shown in FIG. 1 and the direction shown in FIG. .
Furthermore, a gas blowing hole as shown in FIG. 1, FIG. 3, or FIG. 4 is newly provided in the gas tube of the conventional electrode configured so that the main flow of the gas is perpendicular to the surface of the substrate to be processed. It can also be done.
[0045]
Furthermore, the cross-sectional shape of the gas pipe 50c shown in FIG. 5 is not limited to an oval shape. For example, the gas pipe 50c has many shapes such as an ellipse, a rhombus, a rectangle, and a hexagon with a sharp and rounded surface. It may be square.
[0046]
Furthermore, the gas pipe 60c ′ in which the gas blowing hole 60d shown in FIG. 6 is not provided is not provided only in the region not located at the position facing the substrate to be processed K, and is provided, for example, in the central portion. It is also possible to arrange them alternately with the gas pipes 60c having the gas blowing holes 60d.
Furthermore, the direction of the gas blowing hole 60d shown in FIG. 6 does not have to be provided toward the substrate to be processed K, and can be directed in any direction as described above.
For example, when the direction of the gas blowing hole is oriented in the direction shown in FIG. 1, in other words, only one of the central part is the gas pipe 60c provided with the gas blowing hole 60d, and other gases. The tube may be a gas tube 60c ′ without a gas blowing hole.
[0047]
Furthermore, the direction of the gas blowing holes 70d and 70d ′ shown in FIG. 7 does not need to be provided toward the substrate to be processed K, and can be directed, for example, as shown in FIG.
[0048]
【The invention's effect】
Of the present invention Vacuum plasma processing equipment Provides the following effects.
Claim 1 Vacuum plasma processing equipment According to the present invention, the gas blown out from the gas blowing holes is once guided toward the deposition plate, and then the gas is guided toward the substrate to be processed and sufficiently diffused in the space. Since it reaches the processing side surface, a uniform film thickness and film quality can be formed on the substrate surface.
In addition, since the gas blowing holes are opened toward the opposite side of the substrate to be processed, even if the electrode is brought closer to the substrate to be processed, no film pattern is generated in the film formation. Therefore, the gap (distance) between the gas tube and the substrate to be processed can be reduced to 5 mm to 40 mm, preferably 15 mm to 35 mm, the plasma intensity can be increased, the film forming speed can be increased, and the film quality can be improved. In addition, the film forming unit can be made thin (downsized).
[0049]
Claim 2 Vacuum plasma processing equipment According to the above, the gas blown out from the gas blowing hole reaches the side of the adjacent gas pipe (which becomes an electrode), that is, the plasma sheath region around the electrode in a short time, so that particles are generated. It becomes difficult to realize a high-quality film formation that is more uniform and has fewer defects.
[0050]
Claim 3 Vacuum plasma processing equipment Since the gas blowing holes are arranged in a staggered manner, gas diffusion (or mixing) can be further promoted, and a uniform film thickness and film quality can be formed on the substrate surface. The quality of film products and surface-treated products can be further improved.
[0051]
Claim 4 Vacuum plasma processing equipment According to the above, by reducing the length in the arrangement direction of the gas pipes (that is, the length in the width direction when viewed from the substrate to be processed), the distance between the gas pipes, that is, the gas pipes Therefore, the number of gas pipes can be increased, the uniformity of electrode plasma can be improved, and a more uniform film formation can be realized.
In addition, by increasing the tube diameter (major axis) in the direction orthogonal to the arrangement direction, the conventional passage cross-sectional area is ensured, and the gas passage resistance in the gas pipe does not increase, so that the gas blow-out holes can be uniform Gas can be blown out, the uniformity of the electrode plasma can be improved, a more uniform film formation can be realized, and the film formation speed and the film quality can be improved.
[Brief description of the drawings]
FIG. 1 relates to the present invention. Vacuum plasma processing equipment It is a figure which shows 1st Embodiment of this, Comprising: (a) is a partial cross-sectional view, (b) is a partial longitudinal cross-sectional view.
FIG. 2 relates to the present invention. Vacuum plasma processing equipment It is a principal part enlarged view which shows no reference embodiment.
FIG. 3 relates to the present invention. Vacuum plasma processing equipment It is a figure which shows 2nd Embodiment of this, Comprising: (a) is a partial cross-sectional view, (b) is a partial longitudinal cross-sectional view.
FIG. 4 relates to the present invention. Vacuum plasma processing equipment It is a figure which shows 3rd Embodiment of this, Comprising: (a) is a partial cross-sectional view, (b) is a partial longitudinal cross-sectional view.
FIG. 5 relates to the present invention. Vacuum plasma processing equipment It is a figure which shows 4th Embodiment of this, Comprising: (a) is a partial cross-sectional view, (b) is a partial longitudinal cross-sectional view.
FIG. 6 relates to the present invention. Vacuum plasma processing equipment It is a schematic perspective view which shows no reference embodiment.
FIG. 7 relates to the present invention. Vacuum plasma processing equipment It is a schematic perspective view which shows 5th Embodiment of this.
8 is a partial front view of a part of the gas blowing holes provided in the gas pipe shown in FIG. 7 as viewed from the front, where (a) is according to the present invention and (b) is conventional. is there.
FIG. 9 is an overall perspective view of a cluster type vacuum processing apparatus according to an embodiment of the present invention.
FIG. 10 shows a vacuum according to an embodiment of the present invention. plasma It is a schematic block diagram of the film forming chamber of a processing apparatus.
11 is an overall configuration diagram of a film forming unit arranged in the film forming chamber of FIG. 10;
12 is a side sectional view of the film forming chamber shown in FIG.
[Explanation of symbols]
10 electrodes
10c gas pipe
10d Gas blowout hole
11 Heater cover
12 Protection plate (film-forming cover)
30 electrodes
30c gas pipe
30d Gas blowout hole
40 electrodes
40c gas pipe
40d Gas blowout hole
50 electrodes
50c gas pipe
50d gas outlet
70 electrodes
70c gas pipe
70c 'gas pipe
70d Gas outlet
70d 'gas blowout hole
801 Cluster type vacuum processing equipment (vacuum processing equipment)
915 Heater cover
918 Depositing plate (film-forming cover)
K substrate
S space

Claims (4)

Disposed between a heater cover and a film-forming cover for supporting a substrate to be processed, having a function as an electrode while supplying gas into a space surrounded by the heater cover and the film-forming cover; and comprising an upper gas header, and the lower gas header, an electrode comprising connected a plurality of the gas pipe between the upper gas header and lower gas header,
In order to blow out the gas into the space, a gas blowing hole provided in the gas pipe is drilled on a side opposite to a side where the substrate to be processed is located,
The gas blown out from the gas blowing hole flows to the film forming cover side, diffuses in a space surrounded by the film forming cover and the heater cover, and then reaches the processing side surface of the substrate to be processed. A vacuum plasma processing apparatus . Disposed between a heater cover and a film-forming cover for supporting a substrate to be processed, having a function as an electrode while supplying gas into a space surrounded by the heater cover and the film-forming cover; and comprising an upper gas header, and the lower gas header, an electrode comprising connected a plurality of the gas pipe between the upper gas header and lower gas header,
In order to blow out the gas into the space, the gas blowing holes provided in the gas pipe are such that the main flow of the gas blown out from the gas blowing holes is the surface of the gas pipe adjacent to the gas blowing holes on the substrate side and A vacuum plasma processing apparatus , wherein the vacuum plasma processing apparatus is perforated so as to follow a tangent drawn toward the surface on the film forming cover side. The gas blowing holes are provided at an equal pitch with respect to one gas pipe, and the gas blowing holes of the gas pipe adjacent to the one gas pipe are the same as the gas blowing holes provided in the one gas pipe. The vacuum plasma processing apparatus according to claim 1, wherein the vacuum plasma processing apparatus is provided with a shift of / 2 pitch. The vacuum plasma according to any one of claims 1 to 3, wherein a length of the gas pipes in the arrangement direction is shorter than a length in a direction orthogonal to the arrangement direction. Processing equipment .

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