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JP4346142B2 - Low thermal expansion coefficient high thermal conductivity copper alloy and electrical and electronic equipment parts using the copper alloy - Google Patents
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JP4346142B2 - Low thermal expansion coefficient high thermal conductivity copper alloy and electrical and electronic equipment parts using the copper alloy - Google Patents

Low thermal expansion coefficient high thermal conductivity copper alloy and electrical and electronic equipment parts using the copper alloy Download PDF

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JP4346142B2
JP4346142B2 JP04636099A JP4636099A JP4346142B2 JP 4346142 B2 JP4346142 B2 JP 4346142B2 JP 04636099 A JP04636099 A JP 04636099A JP 4636099 A JP4636099 A JP 4636099A JP 4346142 B2 JP4346142 B2 JP 4346142B2
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thermal expansion
expansion coefficient
copper alloy
thermal conductivity
phase
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JP2000239762A (en
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邦照 三原
好正 大山
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Furukawa Electric Co Ltd
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Furukawa Electric Co Ltd
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Description

【0001】
【発明の属する技術分野】
本発明は、低熱膨張係数高熱伝導性銅合金および前記銅合金を用いたヒートスプレッタ、スティフナー、プラスチックBGA(Ball Grid Allay)、プラスチックPGA(Pin Grid Allay)、ヒートシンク、半導体リードフレーム、端子、コネクタなどの電気電子機器部品に関する。
【0002】
【従来の技術】
ヒートスプレッタ、スティフナー、プラスチックBGA、プラスチックPGA、ヒートシンク、半導体リードフレーム、端子、コネクタなどの電気電子機器部品(以下単に電気電子機器部品と称する)には電気電子機器の発熱を放散するために熱伝導性に優れる銅又は銅合金が放熱用材料として用いられている。また前記電気電子機器には、防塵、防湿などを目的にエポキシ樹脂などのプラスチック材がモールドされたり介在されたりする。しかし、前記プラスチック材が放熱用材料に接してモールドされたりしていると、放熱用材料は熱膨張係数が大きく、プラスチック材は熱膨張係数が小さいため、使用中の温度上昇で、両者の接触部に熱膨張差による歪みが生じてプラスチック材が破損することがある。
【0003】
また、大型トランジスタ、高速コンピュータ用CPU、大型コンデンサ、モーター、リードスイッチなどの大電流が流れ大量の熱が発生する電気電子機器部品は放熱基盤上に据付けて用いられるが、この場合も使用中の温度上昇で電気電子機器と放熱基盤(放熱用材料製)との接触部に熱歪みが生じて電気電子機器の機能が低下することがある。
【0004】
【発明が解決しようとする課題】
このような放熱用材料には、従来よりCu−Cr合金などが用いられている。前記Cu−Cr合金はCrが凝固時に晶出し、母相(Cu)に殆ど固溶しないため高熱伝導性であり、しかもCrの含有量が増えるにつれ熱膨張係数が低下する性質がある。
【0005】
ところで、前記Cu−Cr合金のように合金元素が晶出する銅合金の熱膨張係数σcomは下記(1)式で示される複合則が当てはまるとされている。
σcom=σf・Vf+σm(1−Vf)・・・(1)
ここでσfは第2相(Cr)の熱膨張係数、Vfは第2相の体積分率(Crの含有量)、σmは母相(Cu)の熱膨張係数である。
【0006】
本発明者らは、Cu−Cr合金と、Cu−Cr合金と同じ性質を示すCu−Mo合金、Cu−W合金、Cu−Nb合金を、それぞれ高周波真空溶解炉を用いて溶解鋳造し、得られた各々の鋳塊を熱間鍛造し、この熱間鍛造材について熱膨張係数を測定した。その結果、図1に示すように、測定値は複合則に合致することが判った。図1には純銅についてもプロットしてある。
【0007】
しかし、図1から判るように、従来のCu−Cr合金で、プラスチック材なみの熱膨張係数(11〜13×10−6/K)を得るにはCrを40質量%以上含有させる必要があり、このように多量のCrを含有させたのでは、熱伝導性が低下して放熱用材料としての用途が限られてしまうという問題がある。
そこで、本発明者らは、種々の銅合金材料について熱膨張係数を調べ、その中で、Cu−Cr合金などの銅合金は、晶出物(第2相)のアスペクト比(第2相の長さ/径(長さ方向に直角の断面が円であるとした場合の等価直径))が大きくなると熱膨張係数が著しく低下することを知見し、さらに研究を進めて本発明を完成させるに至った。
本発明は、樹脂モールドなどの低熱膨張係数材と接触して用いられる放熱用材料として有用な銅合金、および前記銅合金を用いたヒートスプレッタなどの電気電子機器部品の提供を目的とする。
【0008】
【課題を解決するための手段】
請求項1記載の発明は、Cr、W、Nbのうちの少なくとも1種が合計で2〜50質量%含有され、残部が銅および不可避不純物からなる銅合金であって、前記Cr、W、Nbのうちの少なくとも1種はアスペクト比が10以上の第2相として含有されていることを特徴とする低熱膨張係数高熱伝導性銅合金板材である。
【0009】
請求項記載の発明は、前記第2相として含有されている前記Cr、W、Nbのうちの少なくとも1種のアスペクト比が100以上である請求項1記載の低熱膨張係数高熱伝導性銅合金板材である。
【0010】
請求項記載の発明は、熱膨張係数が、14×10−6以下である請求項1又は2に記載の低熱膨張係数高熱伝導性銅合金板材である。
【0011】
請求項記載の発明は、熱膨張係数が、13×10−6以下である請求項1又は2までのいずれかに記載の低熱膨張係数高熱伝導性銅合金板材である。
【0012】
請求項記載の発明は、請求項1から請求項までのいずれかに記載の銅合金板材が用いられている低熱膨張係数高熱伝導性銅合金板材製の電気電子機器部品で、ヒートスプレッタ、スティフナー、プラスチックBGA(Ball Grid Allay)、プラスチックPGA(Pin Grid Allay)、ヒートシンク、半導体リードフレーム、端子、コネクタなどに用いられる。
【0013】
請求項記載の発明は、少なくとも一部がプラスチック材で覆われている請求項記載の低熱膨張係数高熱伝導性銅合金製の電気電子機器部品で、ヒートスプレッタ、スティフナー、プラスチックBGA(Ball Grid Allay)、プラスチックPGA(Pin Grid Allay)、ヒートシンク、半導体リードフレーム、端子、コネクタなどに用いられる。
【0014】
【発明の実施の形態】
本発明の銅合金板材は、Cu母相中にCr、W、Nbのうちの少なくとも1種がアスペクト比10以上の第2相として含有されたものである。
前記第2相となるCr、W、Nbは、いずれもCuと二相分離型の元素であり、凝固時にCu母相中に第2相として晶出する。この晶出物はCuより熱膨張係数が小さいためCuの熱膨張係数を低下させるが、本発明の銅合金板材では、前記第2相のアスペクト比を大きくすることによりCuより著しく熱膨張係数を低下させたもので、アスペクト比が1程度の従来材に比べて、熱伝導率が同じなら熱膨張係数が著しく低く、熱膨張係数が同じなら熱伝導率が著しく高いものである。
【0015】
本発明の銅合金板材はCr、W、Nbのうちの少なくとも1種を(複数含有させるときは合計で)2〜50質量%含む他に、原料中または製造工程中に混入する不可避不純物が含有されていても差し支えない。
【0016】
本発明において、第2相となるCr、W、Nbのうちの少なくとも1種の合計の含有量を2〜50質量%に規定し、且つ前記第2相のアスペクト比を10以上に規定する理由は、含有量が2質量%未満でもまたアスペクト比が10未満でも十分な低熱膨張係数が得られず、含有量が50質量%を超えると融点が高くなり溶解鋳造が困難になるためである。前記アスペクト比は100以上が特に望ましい。
【0017】
本発明の銅合金板材は、例えば、母相となる純銅(無酸素銅、タフピッチ銅、リン脱酸銅など)にCr、W、Nbのうちの少なくとも1種を添加し、溶製、鋳造して得られる鋳塊に熱間加工、冷間加工、必要に応じて熱処理を施して製造される。前記冷間加工には平ロール圧延、ダイス引抜き、スエージング、鍛造などの任意の加工法が適用できる。
ここで冷間加工とは加工時の材料温度が300℃以下の加工である。
【0018】
本発明の銅合金板材に含まれる合金元素のCr、W、Nbは、いずれも凝固時に晶出し、熱間加工後は略球状(アスペクト比が1前後)の第2相(晶出物)として母相(Cu)に均一に分散し、次の冷間加工で前記第2相はアスペクト比が次第に大きくなり、それにつれて熱膨張係数が低下する。
アスペクト比が10以上で熱膨張係数は前記複合則から求められる熱膨張係数よりも低くなり、アスペクト比が100以上で複合則から求められる熱膨張係数より約10%低下し、さらに500以上になると30%以上低下する。この時、第2相の含有量は同じなので熱伝導性は変化せず、熱膨張係数のみが低下する。
【0019】
具体的に説明すると、14×10−6/Kの熱膨張係数を得るためには、従来のCu−Cr合金(アスペクト比が1程度)ではCrを30質量%含有させる必要があり、その導電率(熱伝導性)は約70%IACSと低い。
これに対し、本発明の銅合金では、アスペクト比を10としたときでもCrは15質量%含有させれば良く、その導電率は約83%IACSと高い。純金属および第2相(晶出物)を含まない合金では冷間加工しても熱膨張係数は変化しない。
【0020】
請求項及び請求項の電気電子機器部品のうち、ヒートスプレッタ、スティフナー、プラスチックBGA、プラスチックPGAは、いずれもICチップが搭載される電子機器の部品である。例えば、プラスチックBGAは、図2に示すように、積層基板などのビルドアップサブストレート1上にICチップ2が載置され、ICチップ2の両側にはプラスチック材3を介在させてスティフナー4が配置され、ICチップ2上にはヒートスプレッタ5が配置されたものである。図2で、6は配線基板(図示せず)に半田付けするためのソルダーバンプである。なお、図2において、プラスチック材3を介在させないで、その部分が空洞の場合もある。また5の上面と6部分のみが露出して残り部分がプラスチック材で覆われることもある。
【0021】
スティフナー4とヒートスプレッタ5はICチップ2の発熱を吸収し、ヒートスプレッタ5上に取付けられる放熱板(図示せず、例えばフィン)に熱を伝達するためのヒートシンクの役割を担っている。従ってスティフナー4やヒートスプレッタ5などには良好な熱伝導性が要求される。
【0022】
一方、プラスチックGAは、前述のようにプラスチック材3が介在したり、全体または一部がプラスチック材でモールドされたりするが、このプラスチック材はヒートスプレッタ5などと接触するため熱膨張係数の違いから破損する恐れがあり、ヒートスプレッタ5などを構成する放熱用材料にはプラスチック材なみの低熱膨張係数(11〜13×10−6/K)が要求される。なお、特にプラスチックBGAの全体(図2でソルダーバンプおよびヒートスプレッタ5の上面を除く部分)が樹脂モールドされる場合は、ヒートスプレッタ5の上部に放熱フィン(図示せず)を取付けて放熱すると良い。
【0023】
本発明の銅合金板材は、例えば、第2相となる合金元素を2〜30質量%程度含有させることにより前記プラスチック材と同等の低熱膨張係数となり、30〜50質量%含有させることにより、熱膨張係数をさらに低下させることができ、Siチップを搭載するリードフレームなどに適用できる。このように、本発明の銅合金は、Crなどの合金元素を多量に含有させて熱伝導性が低下しても、同じ熱伝導性で比較すると従来材に比べて熱膨張係数を大幅に低下させることができるので、用途が限定されることがない。
【0024】
【実施例】
以下に、本発明を実施例により詳細に説明する。
(実施例1)
電気銅に高純度のCr、Wまたはbを添加して高周波真空溶解炉にて溶製し、これを金型に鋳造して45mm×45mm×120mmの鋳塊とし、この鋳塊を熱間圧延(圧延温度900℃、減面率75%)し、次いで1000℃で1時間溶体化処理したのち、面削して20mm×20mm×400mmの角材とし、この角材に冷間加工(溝ロール圧延→ダイス引抜き→カセットローラーダイス引抜き)を施し、次いで固溶元素を析出させて熱伝導性を高めるために、Arガス中で500℃、1時間熱処理し、その後水焼入れして厚み2.0mmまたは0.2mmの板材を製造した。冷間加工方向は、圧延加工および引抜き(ダイス、ローラー)加工とも同じにした。
【0025】
(比較例1)
実施例1の溶体化処理後面削した角材から直径3mm、長さ20mmの断面円形のサンプルを切出した。
【0026】
実施例1で製造した各板材から切出した長さ20mmのサンプルと比較例1のサンプルについて、(1)アスペクト比、(2)熱膨張係数、(3)導電率(熱伝導性の代用値)を下記方法により測定した。
【0027】
(1)アスペクト比:
各サンプルを加工面に平行に鏡面研磨し、研磨面を20質量%硝酸水溶液で腐食して表層のCuを除去した後、走査型電子顕微鏡により第2相を観察し写真撮影した。この写真から第2相のアスペクト比(第2相の長さ(縦方向)/径(横方向長さ))を求めた。前記縦方向長さはサンプルの長さ方向(冷間加工材の場合は冷間加工方向)の長さである。横方向長さは等間隔に5箇所測定した値の平均値である。
【0028】
(2)熱膨張係数:
熱膨張測定機の電気炉内に、各サンプルを、上部にアルミナ製おもり(荷重10g)を載せてセットし、電気炉内温度が常温から300℃まで1℃/secの速度で上昇する間の前記おもりの変位を測定した。
【0029】
(3)導電率:
厚み2mmおよび0.2mmの板材、並びに直径3mmの線材から長さ150mmのサンプルを切出し、20℃の恒温槽中で四端子法により比抵抗値を測定して求めた。端子間距離は100mmとした。
【0030】
溶体化処理しないこと以外は、実施例1、比較例1と同じ方法により製造した純銅と黄銅(Cu−30質量%Zn)の各板材または線材についても同様の測定を行った。
結果を表1に示す。アスペクト比は、第2相10個の平均値、熱膨張係数と導電率は各3本の平均値を示した。表1には用いた銅合金板材の成分組成も併記した。
【0031】
【表1】

Figure 0004346142
【0032】
表1より明らかなように、本発明例No.1〜No.20は、いずれも、熱膨張係数がプラスチック材なみに小さい。また導電率(熱伝導性)が放熱用材料として十分使用できる値であることも本発明例No.11〜No.20の測定値から明らかである。これは銅合金に含まれる第2相のアスペクト比が10以上と大きいため、少量の第2相で熱膨張係数を低くすることができたためである。
【0033】
これに対し、比較例No.21〜No30は、略同程度の導電率で比較すると、いずれも本発明例に比べて熱膨張係数が大きく放熱用材料としては不適当なものであった。これは銅合金に含まれる第2相のアスペクト比が小さいためである。
一方、純銅線材(No.31〜No.33)は熱膨張係数が大きく、黄銅線材(No.34〜No.36)は熱膨張係数が大きいうえ導電率(熱伝導性)も低く、いずれも実用性に劣るものであった。
【0034】
実施例1で製造した本発明例の各銅合金線材について耐熱性を調べたが、いずれも優れており、耐熱性が要求される用途にも十分使用可能なことが判った。
【0035】
【発明の効果】
以上に述べたように、本発明の銅合金板材は母相(Cu)にCr、W、Nbのうちの少なくとも1種がアスペクト比10以上の第2相(晶出物)として含有され、従来よりも少量の第2相、即ち、従来のように熱伝導性を低下させることなく、熱膨張係数を著しく低下させるものであり、このため樹脂モールドなどの低熱膨張係数材と接触させて用いても樹脂モールドなどが損傷することがなく放熱用材料として極めて有用である。
更に、本発明の銅合金板材は、ヒートスプレッタ、スティフナー、プラスチックBGA、プラスチックPGA、ヒートシンク、半導体リードフレーム、端子、コネクタ、リードスイッチなどの電気電子機器部品に好適に使用でき、依って、工業上顕著な効果を奏するものである。
【図面の簡単な説明】
【図1】熱膨張係数に関する複合則の説明図である。
【図2】プラスチックBGAの説明図である。
【符号の説明】
1 ビルドアップサブストレート(積層基板など)
2 ICチップ
3 プラスチック材(空洞の場合もある)
4 スティフナー
5 ヒートスプレッタ
6 ソルダーバンプ[0001]
BACKGROUND OF THE INVENTION
The present invention is a low thermal expansion coefficient high thermal conductivity copper alloy and a heat spreader, stiffener, plastic BGA (Ball Grid Ally), plastic PGA (Pin Grid Ally), heat sink, semiconductor lead frame, terminal, connector, etc. It relates to electrical and electronic equipment parts.
[0002]
[Prior art]
Electrical components such as heat spreaders, stiffeners, plastic BGAs, plastic PGAs, heat sinks, semiconductor lead frames, terminals, connectors, etc. (hereinafter simply referred to as electrical / electronic device components) are thermally conductive to dissipate the heat generated by electrical / electronic devices. Copper or copper alloy having excellent heat resistance is used as a heat dissipation material. In addition, a plastic material such as an epoxy resin is molded or interposed in the electric / electronic device for the purpose of dust prevention and moisture prevention. However, if the plastic material is molded in contact with the heat dissipation material, the heat dissipation material has a large coefficient of thermal expansion, and the plastic material has a small coefficient of thermal expansion. The plastic material may be damaged due to distortion caused by the difference in thermal expansion.
[0003]
Also, large electronic devices such as large transistors, CPUs for high-speed computers, large capacitors, motors, reed switches, etc. that generate large amounts of heat and are used on the heat dissipation board are still in use. When the temperature rises, thermal distortion may occur at the contact portion between the electric / electronic device and the heat dissipation base (made of a heat dissipation material), and the function of the electric / electronic device may deteriorate.
[0004]
[Problems to be solved by the invention]
Conventionally, a Cu—Cr alloy or the like has been used as such a heat dissipation material. The Cu—Cr alloy has high thermal conductivity because Cr crystallizes during solidification and hardly dissolves in the parent phase (Cu), and the thermal expansion coefficient decreases as the Cr content increases.
[0005]
By the way, the thermal expansion coefficient σcom of a copper alloy in which an alloy element is crystallized, such as the Cu—Cr alloy, is said to be a composite law expressed by the following formula (1).
σcom = σf · Vf + σm (1−Vf) (1)
Here, σf is the thermal expansion coefficient of the second phase (Cr), Vf is the volume fraction of the second phase (Cr content), and σm is the thermal expansion coefficient of the parent phase (Cu).
[0006]
The present inventors obtained a Cu-Cr alloy, a Cu-Mo alloy, a Cu-W alloy, and a Cu-Nb alloy that exhibit the same properties as the Cu-Cr alloy, respectively, by melting and casting them using a high-frequency vacuum melting furnace. Each of the ingots thus obtained was hot forged, and the thermal expansion coefficient of this hot forged material was measured. As a result, as shown in FIG. 1, it was found that the measured value matched the compound rule. FIG. 1 also plots pure copper.
[0007]
However, as can be seen from FIG. 1, in order to obtain a thermal expansion coefficient (11 to 13 × 10 −6 / K) similar to that of a plastic material with a conventional Cu—Cr alloy, it is necessary to contain 40% by mass or more of Cr. When a large amount of Cr is contained in this way, there is a problem that the thermal conductivity is lowered and the use as a heat dissipation material is limited.
Therefore, the present inventors have investigated the thermal expansion coefficient of various copper alloy materials, and among them, copper alloys such as Cu-Cr alloys have an aspect ratio (second phase) of crystallized matter (second phase). To find out that the thermal expansion coefficient is significantly reduced when the length / diameter (equivalent diameter when the cross section perpendicular to the length direction is a circle) is increased, and further research is conducted to complete the present invention. It came.
An object of the present invention is to provide a copper alloy useful as a heat dissipation material used in contact with a low thermal expansion coefficient material such as a resin mold, and an electrical / electronic equipment component such as a heat spreader using the copper alloy.
[0008]
[Means for Solving the Problems]
The invention described in claim 1 is a copper alloy containing at least one of Cr, W, and Nb in a total amount of 2 to 50% by mass, and the balance being copper and inevitable impurities, wherein the Cr, W, and Nb At least one of these is a low thermal expansion coefficient and high thermal conductivity copper alloy sheet characterized by being contained as a second phase having an aspect ratio of 10 or more.
[0009]
The invention according to claim 2 is the low thermal expansion coefficient high thermal conductivity copper alloy according to claim 1, wherein the aspect ratio of at least one of the Cr 2 , W 2 and Nb contained as the second phase is 100 or more. It is a board material.
[0010]
Invention of Claim 3 is a low thermal expansion coefficient high heat conductive copper alloy board | plate material of Claim 1 or 2 whose thermal expansion coefficient is 14 * 10-6 or less.
[0011]
The invention according to claim 4 is the low thermal expansion coefficient and high thermal conductivity copper alloy sheet according to any one of claims 1 and 2 , wherein the thermal expansion coefficient is 13 × 10 −6 or less.
[0012]
The invention according to claim 5 is an electric / electronic equipment part made of a copper alloy sheet material having a low thermal expansion coefficient and high thermal conductivity, wherein the copper alloy sheet material according to any one of claims 1 to 4 is used. , Plastic BGA (Ball Grid Ally), plastic PGA (Pin Grid Ally), heat sink, semiconductor lead frame, terminal, connector, etc.
[0013]
The invention according to claim 6 is an electrical / electronic equipment part made of a copper alloy with low thermal expansion coefficient and high thermal conductivity according to claim 5 , wherein at least a part thereof is covered with a plastic material, and includes a heat spreader, stiffener, plastic BGA (Ball Grid Ally) ), Plastic PGA (Pin Grid Array), heat sink, semiconductor lead frame, terminal, connector and the like.
[0014]
DETAILED DESCRIPTION OF THE INVENTION
The copper alloy sheet of the present invention is one in which at least one of Cr, W, and Nb is contained in the Cu matrix as the second phase having an aspect ratio of 10 or more.
Cr serving as the second phase, W, N b are each an element of Cu and two-phase separation type, crystallized as the second phase in the Cu matrix phase during solidification. Since this crystallized product has a smaller thermal expansion coefficient than Cu, the thermal expansion coefficient of Cu is lowered. However, in the copper alloy sheet material of the present invention, the thermal expansion coefficient is significantly higher than that of Cu by increasing the aspect ratio of the second phase. Compared with the conventional material having an aspect ratio of about 1, the thermal expansion coefficient is remarkably low when the thermal conductivity is the same, and the thermal conductivity is remarkably high when the thermal expansion coefficient is the same.
[0015]
Copper alloy sheet of the present invention is Cr, W, (in total is to be selected when the plurality containing) at least one kind of of the Nb 2 to 50 wt% including other, unavoidable impurities mixed or during the manufacturing process the raw material It may be contained.
[0016]
In the present invention, the reason why the total content of at least one of Cr 2 , W 2 , and Nb serving as the second phase is defined as 2 to 50% by mass and the aspect ratio of the second phase is defined as 10 or more. This is because even if the content is less than 2% by mass and the aspect ratio is less than 10, a sufficient low thermal expansion coefficient cannot be obtained, and if the content exceeds 50% by mass, the melting point becomes high and melt casting becomes difficult. The aspect ratio is particularly preferably 100 or more.
[0017]
For example, the copper alloy sheet of the present invention is prepared by adding at least one of Cr, W, and Nb to pure copper (oxygen-free copper, tough pitch copper, phosphorus deoxidized copper, etc.) serving as a parent phase, melting, and casting. The ingot obtained in this way is manufactured by hot processing, cold processing, and heat treatment as necessary. Any processing method such as flat roll rolling, die drawing, swaging, and forging can be applied to the cold working.
Here, the cold work is a process in which the material temperature during the process is 300 ° C. or less.
[0018]
Cr alloy elements contained in the copper alloy sheet of the present invention, W, N b are both crystallized during solidification, the second phase after the hot working nearly spherical (aspect ratio around 1) (crystallized substance) As a result, the aspect ratio of the second phase gradually increases in the subsequent cold working, and the thermal expansion coefficient decreases accordingly.
When the aspect ratio is 10 or more, the thermal expansion coefficient is lower than the thermal expansion coefficient obtained from the composite law, and when the aspect ratio is 100 or more, it is about 10% lower than the thermal expansion coefficient obtained from the composite law, and further 500 or more. Decrease by 30% or more. At this time, since the content of the second phase is the same, the thermal conductivity does not change and only the thermal expansion coefficient decreases.
[0019]
More specifically, in order to obtain a thermal expansion coefficient of 14 × 10 −6 / K, a conventional Cu—Cr alloy (with an aspect ratio of about 1) needs to contain 30% by mass of Cr. The rate (thermal conductivity) is as low as about 70% IACS.
On the other hand, in the copper alloy of the present invention, even when the aspect ratio is 10, Cr may be contained by 15% by mass, and the conductivity is as high as about 83% IACS. An alloy that does not contain a pure metal and a second phase (crystallized product) does not change the thermal expansion coefficient even when cold worked.
[0020]
Of the electrical and electronic equipment components according to claims 5 and 6 , the heat spreader, the stiffener, the plastic BGA, and the plastic PGA are all components of the electronic equipment on which the IC chip is mounted. For example, as shown in FIG. 2, a plastic BGA has an IC chip 2 mounted on a build-up substrate 1 such as a laminated substrate, and stiffeners 4 are disposed on both sides of the IC chip 2 with a plastic material 3 interposed therebetween. The heat spreader 5 is arranged on the IC chip 2. In FIG. 2, 6 is a solder bump for soldering to a wiring board (not shown). In FIG. 2, there is a case where the plastic material 3 is not interposed and the portion is hollow. Further, only the upper surface and the 6 portion of 5 may be exposed and the remaining portion may be covered with a plastic material.
[0021]
The stiffener 4 and the heat spreader 5 serve as a heat sink for absorbing heat generated by the IC chip 2 and transferring heat to a heat radiating plate (not shown, for example, fins) mounted on the heat spreader 5. Accordingly, the stiffener 4 and the heat spreader 5 are required to have good thermal conductivity.
[0022]
On the other hand, plastic P GA is or plastic material 3 is interposed as described above, but whole or in part or be molded of a plastic material, the plastic material from the thermal expansion coefficient difference for contact with such heat spreader 5 There is a risk of breakage, and the heat dissipating material constituting the heat spreader 5 or the like is required to have a low thermal expansion coefficient (11 to 13 × 10 −6 / K) that is similar to a plastic material. In particular, when the entire plastic BGA (the portion excluding the solder bump and the upper surface of the heat spreader 5 in FIG. 2) is resin-molded, it is preferable to dissipate heat by attaching a radiation fin (not shown) to the upper portion of the heat spreader 5.
[0023]
The copper alloy sheet of the present invention, for example, has a low thermal expansion coefficient equivalent to that of the plastic material by containing about 2 to 30% by mass of an alloy element that becomes the second phase, and by adding 30 to 50% by mass, The expansion coefficient can be further reduced, and it can be applied to a lead frame on which a Si chip is mounted. Thus, even if the copper alloy of the present invention contains a large amount of alloy elements such as Cr and the thermal conductivity is lowered, the thermal expansion coefficient is greatly reduced compared with the conventional material when compared with the same thermal conductivity. Therefore, the application is not limited.
[0024]
【Example】
Hereinafter, the present invention will be described in detail with reference to examples.
Example 1
High purity Cr, W or Nb is added to electrolytic copper and melted in a high-frequency vacuum melting furnace, which is cast into a mold to form an ingot of 45 mm × 45 mm × 120 mm. Rolled (rolling temperature: 900 ° C., area reduction: 75%), then solution treated at 1000 ° C. for 1 hour, then chamfered to a square of 20 mm × 20 mm × 400 mm, and cold work (groove roll rolling) on this square → Die drawing → Cassette roller die drawing), and in order to precipitate a solid solution element and improve thermal conductivity, heat treatment is performed in Ar gas at 500 ° C. for 1 hour, and then water quenching is performed to obtain a thickness of 2.0 mm or A 0.2 mm plate was produced. The cold working direction was the same for both rolling and drawing (die, roller).
[0025]
(Comparative Example 1)
A sample with a circular cross-section having a diameter of 3 mm and a length of 20 mm was cut out from the square-faced square material after the solution treatment in Example 1.
[0026]
About the sample of length 20mm cut out from each board | plate material manufactured in Example 1, and the sample of the comparative example 1, (1) aspect ratio, (2) thermal expansion coefficient, (3) electrical conductivity (substitute value of thermal conductivity) Was measured by the following method.
[0027]
(1) Aspect ratio:
Each sample was mirror-polished parallel to the processed surface, and the polished surface was corroded with a 20% by mass nitric acid aqueous solution to remove Cu on the surface layer. Then, the second phase was observed with a scanning electron microscope and photographed. From this photograph, the aspect ratio of the second phase (length of the second phase (longitudinal direction) / diameter (lateral length)) was determined. The length in the longitudinal direction is the length in the length direction of the sample (in the case of a cold work material, the cold work direction). The length in the horizontal direction is an average value of values measured at five points at equal intervals.
[0028]
(2) Thermal expansion coefficient:
Each sample is set in an electric furnace of a thermal expansion measuring machine with an alumina weight (load 10 g) on top, and the temperature in the electric furnace rises from room temperature to 300 ° C at a rate of 1 ° C / sec. The displacement of the weight was measured.
[0029]
(3) Conductivity:
A sample having a length of 150 mm was cut out from a plate material having a thickness of 2 mm and 0.2 mm, and a wire material having a diameter of 3 mm, and a specific resistance value was measured by a four-terminal method in a constant temperature bath at 20 ° C. The distance between terminals was 100 mm.
[0030]
Except not performing solution treatment, the same measurement was performed on each plate or wire of pure copper and brass (Cu-30 mass% Zn) manufactured by the same method as in Example 1 and Comparative Example 1.
The results are shown in Table 1. The aspect ratio was an average value of 10 second phases, and the thermal expansion coefficient and conductivity were average values of 3 each. Table 1 also shows the component composition of the copper alloy sheet used.
[0031]
[Table 1]
Figure 0004346142
[0032]
As is apparent from Table 1, Example No. 1-No. 20 has a thermal expansion coefficient as small as that of a plastic material. In addition, it is also shown that the conductivity (thermal conductivity) is a value that can be sufficiently used as a heat dissipation material. 11-No. It is clear from 20 measurements. This is because the thermal expansion coefficient can be lowered with a small amount of the second phase because the aspect ratio of the second phase contained in the copper alloy is as large as 10 or more.
[0033]
In contrast, Comparative Example No. When comparing No. 21 to No. 30 with substantially the same electrical conductivity, all of them had a larger thermal expansion coefficient than the examples of the present invention, and were unsuitable as a heat dissipation material. This is because the aspect ratio of the second phase contained in the copper alloy is small.
On the other hand, pure copper wire (No. 31 to No. 33) has a large coefficient of thermal expansion, and brass wire (No. 34 to No. 36) has a large coefficient of thermal expansion and low conductivity (thermal conductivity). It was inferior in practicality.
[0034]
The heat resistance of each of the copper alloy wires of the present invention produced in Example 1 was examined, but all were excellent and found to be sufficiently usable for applications requiring heat resistance.
[0035]
【The invention's effect】
As described above, the copper alloy sheet of the present invention is contained as a Cr in the parent phase (Cu), W, at least one is an aspect ratio of 10 or more second phases of the N b (crystallized substances), The second phase is smaller than before, that is, the thermal expansion coefficient is remarkably lowered without lowering the thermal conductivity as in the conventional case. For this reason, it is used in contact with a low thermal expansion coefficient material such as a resin mold. However, the resin mold or the like is not damaged and is extremely useful as a heat dissipation material.
Furthermore, the copper alloy sheet material of the present invention can be suitably used for electrical and electronic equipment parts such as heat spreaders, stiffeners, plastic BGAs, plastic PGAs, heat sinks, semiconductor lead frames, terminals, connectors, and reed switches, and thus is industrially significant. It has a great effect.
[Brief description of the drawings]
FIG. 1 is an explanatory diagram of a compound law relating to a thermal expansion coefficient.
FIG. 2 is an explanatory diagram of a plastic BGA.
[Explanation of symbols]
1 Build-up substrate (laminated substrate, etc.)
2 IC chip 3 Plastic material (may be hollow)
4 Stiffener 5 Heat Spreader 6 Solder Bump

Claims (6)

Cr、W、Nbのうちの少なくとも1種が合計で2〜50質量%含有され、残部が銅および不可避不純物からなる銅合金であって、前記Cr、W、Nbのうちの少なくとも1種はアスペクト比が10以上の第2相として含有されていることを特徴とする低熱膨張係数高熱伝導性銅合金板材。A total of at least one of Cr, W, and Nb is contained in an amount of 2 to 50% by weight, and the balance is copper and an inevitable impurity, and at least one of Cr, W, and Nb is an aspect. A low thermal expansion coefficient and high thermal conductivity copper alloy sheet characterized by being contained as a second phase having a ratio of 10 or more. 前記第2相として含有されている前記Cr、W、Nbのうちの少なくとも1種のアスペクト比が100以上である請求項1記載の低熱膨張係数高熱伝導性銅合金板材。Wherein the Cr contained as a second phase, W, at least one low coefficient of thermal expansion high thermal conductivity copper alloy sheet according to claim 1 Symbol placement aspect ratio of 100 or more of Nb. 熱膨張係数が、14×10−6以下である請求項1又は2に記載の低熱膨張係数高熱伝導性銅合金板材。The low thermal expansion coefficient and high thermal conductivity copper alloy sheet according to claim 1 or 2 , wherein the thermal expansion coefficient is 14 x 10-6 or less. 熱膨張係数が、13×10−6以下である請求項1又は2に記載の低熱膨張係数高熱伝導性銅合金板材。The low thermal expansion coefficient and high thermal conductivity copper alloy sheet according to claim 1 or 2 , wherein the thermal expansion coefficient is 13 x 10-6 or less. 請求項1から請求項までのいずれかに記載の銅合金板材が用いられている低熱膨張係数高熱伝導性銅合金板材製の電気電子機器部品。Electrical and electronic equipment parts made of a low thermal expansion coefficient and high thermal conductivity copper alloy sheet, wherein the copper alloy sheet according to any one of claims 1 to 4 is used. 少なくとも一部がプラスチック材で覆われている請求項記載の低熱膨張係数高熱伝導性銅合金板材製の電気電子機器部品。The electrical and electronic equipment part made of a low thermal expansion coefficient and high thermal conductivity copper alloy sheet according to claim 5 , wherein at least a part thereof is covered with a plastic material.
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