JP4347366B2 - Active matrix color liquid crystal display - Google Patents

Description

The present invention relates to an active matrix color liquid crystal display device.

  8 shows a transmission plan view of a part of an active substrate in an example of a conventional color liquid crystal display device, FIG. 9 shows a cross-sectional view taken along line XX in FIG. 8, and FIG. 10 shows YY in FIG. Sectional drawing containing the opposing board | substrate in the part along a line is shown.

  As shown in FIG. 10, in this color liquid crystal display device, the active substrate 1 and the counter substrate 2 positioned above the active substrate 1 are bonded together via a substantially rectangular frame-shaped sealing material (not shown), The liquid crystal 3 is sealed in a space formed between the sealing material and both the substrates 1 and 2.

  As shown in FIG. 8, a plurality of scanning lines 4 and a plurality of signal lines 5 are provided on the active substrate 1 so as to extend in the row direction and the column direction, respectively. Near each intersection of both lines 4 and 5, thin film transistors 6 connected to both lines 4 and 5 and pixel electrodes 7 driven by the thin film transistors 6 are arranged in a matrix. An auxiliary capacitance line 8 is provided on the opposite side of the scanning line 4 across the pixel electrode 7 so as to overlap the pixel electrode 7 and extend in the row direction.

  Next, a specific structure of the thin film transistor 6 and the like will be described with reference to FIG. A scanning line 4 including a gate electrode 11 is provided at a predetermined location on the upper surface of the active substrate 1 (opposite surface facing the counter substrate 2), and an auxiliary capacitance line 8 is provided at another predetermined location. Is provided with a gate insulating film 12.

  A semiconductor thin film 13 made of intrinsic amorphous silicon is provided at a predetermined position on the upper surface of the gate insulating film 12. A channel protective film 14 is provided at substantially the center of the upper surface of the semiconductor thin film 13. Contact layers 15 and 16 made of n-type amorphous silicon are provided on both sides of the upper surface of the channel protective film 14 and on the upper surface of the semiconductor thin film 13 on both sides thereof.

  A source electrode 17 is provided on the upper surface of one contact layer 15. A signal line 5 including a drain electrode 18 is provided at a predetermined position on the upper surface of the other contact layer 16 and the upper surface of the gate insulating film 12.

  The thin film transistor 6 is composed of the gate electrode 11, the gate insulating film 12, the semiconductor thin film 13, the channel protective film 14, the contact layers 15 and 16, the source electrode 17 and the drain electrode 18.

  A planarizing film 19 is provided on the entire upper surface of the gate insulating film 12 including the thin film transistor 6 and the like. A contact hole 20 is provided in a portion corresponding to a predetermined portion of the source electrode 17 of the planarizing film 19. A pixel electrode 7 made of ITO is provided at a predetermined position on the upper surface of the planarizing film 19. The pixel electrode 7 is connected to the source electrode 17 through the contact hole 20.

  Next, the counter substrate 2 will be described with reference to FIG. A black matrix 21 and R (red), G (green), and B (blue) color filter elements 22R, 22G, and 22B are provided at predetermined positions on the lower surface of the counter substrate 2 (the surface facing the active substrate 1). It has been. Among these, the color filter elements 22 </ b> R, 22 </ b> G, and 22 </ b> B are provided to face the corresponding pixel electrode 7.

  A common electrode 23 made of ITO is provided on the lower surfaces of the black matrix 21 and the color filter elements 22R, 22G, and 22B. A pixel capacitor portion is formed by the pixel electrode 7, the common electrode 23 disposed opposite to the pixel electrode 7, and the liquid crystal 3 therebetween. In this case, since the area of the pixel electrode 7 is the same, the pixel capacitance of the pixel capacitance portion is the same.

  Here, as shown in FIG. 8, the portion of the auxiliary capacitance line 8 that is overlapped with the pixel electrode 7 is an auxiliary capacitance electrode 8a. An auxiliary capacity portion is formed by the overlapped portion. In this case, since the area of the auxiliary capacitance electrode 8a is the same, the auxiliary capacitance of the auxiliary capacitance portion is the same.

  By the way, the thicknesses of the color filter elements 22R, 22G, and 22B are different from each other for the purpose of correcting the transmitted light intensity of the liquid crystal 3 depending on the wavelengths of R, G, and B. That is, the thicknesses of the color filter elements 22R, 22G, and 22B are increased in this order.

  On the other hand, since each pixel electrode 7 corresponding to each color filter element 22R, 22G, 22B is provided on the planarizing film 19, it is arranged on the same plane. Accordingly, the gaps d1, d2, and d3 of the R, G, and B pixels become smaller in this order. Such a structure is generally called a multi-gap structure.

  Next, FIG. 11 shows an equivalent circuit of the conventional color liquid crystal display device. Reference numeral 31 denotes a pixel capacitance portion, 32 denotes an auxiliary capacitance portion, and 33 denotes a parasitic capacitance portion between the gate electrode 11 and the source electrode 17 of the thin film transistor 6. In this case, the common electrode 23 that is an electrode that is not connected to the thin film transistor 6 of the pixel capacitor 31 and the auxiliary capacitor electrode 8a that is an electrode that is not connected to the thin film transistor 6 of the auxiliary capacitor 32 are connected to a common power source (voltage Vcom). 34.

Next, FIG. 12A shows the waveform of the signal voltage applied to the liquid crystal 3, and FIG. 12B shows the scanning voltage (gate pulse) applied to the scanning line 4. When the pixel capacitance of the pixel capacitor unit 31 is Clc, the auxiliary capacitor of the auxiliary capacitor unit 32 is Cs, and the parasitic capacitance of the parasitic capacitor unit 33 is Cgs, the gate pulse is turned off, and the image signal capture of each pixel is performed. At the time of completion, a level shift voltage ΔV obtained by the following equation is generated in each pixel electrode potential Vsig.
ΔV = (Cgs) / (Cgs + Clc + Cs)

  This level shift voltage ΔV always lowers the pixel electrode potential Vsig by ΔV regardless of the polarity of the signal voltage applied to the signal line 5. Therefore, if the potential Vcom of the common electrode 23 is set lower than the center potential Vc of the signal line 5 by the level shift voltage ΔV, the voltage applied to the liquid crystal 3 has a substantially symmetric waveform, preventing flicker. be able to.

  As described above, since the thicknesses of the color filter elements 22R, 22G, and 22B are increased in this order, the gaps d1, d2, and d3 of the R, G, and B pixels are decreased in this order. Yes. Further, the pixel capacitance Clc is expressed by ε · S / d (ε: liquid crystal dielectric constant, S: pixel electrode area, d: gap).

  Accordingly, the pixel capacitance Clc increases as the gap d decreases. That is, in the case of the R pixel, since the gap d1 is the largest and the pixel capacitance Clc is the smallest, the level shift voltage ΔV is the largest. On the other hand, in the case of the B pixel, since the gap d3 is the smallest and the pixel capacitance Clc is the largest, the level shift voltage ΔV is the smallest.

As described above, the conventional color liquid crystal display device has a problem in that the level shift voltage ΔV of each of the R, G, and B pixels decreases in this order and causes flicker.
An object of the present invention is to make the level shift voltage ΔV of R, G, and B pixels substantially the same.

The invention described in claim 1 is an active matrix color liquid crystal display device in which the thickness of the color filter is different for each color component, and any one of the color components is associated with each pixel. Thus, the parasitic capacitance generated between the scanning line connected to the pixel electrode via the switching element and the pixel electrode is equal to the color so that the level shift voltage ΔV at the end of capturing the image signal is equal between the pixels. The pixel corresponding to the color component having a thick color filter is different from the pixel corresponding to the component, and the pixel corresponding to the color component having a thin color filter is different from the pixel corresponding to the color component having a thin color filter. In contrast, the parasitic capacitance generated is large.
According to a second aspect of the present invention, in the first aspect of the present invention, the pixel electrode is formed on an upper layer side of the scanning line and overlaps with a part of the scanning line in an in-plane direction. Each of the pixels formed is different in area of the overlapping portion corresponding to the color component.
According to a third aspect of the present invention, in the invention of the second aspect, a pixel corresponding to a color component having a thick color filter has a larger pixel than a pixel corresponding to a color component having a small color filter. The area of the overlapping portion is large.
According to a fourth aspect of the present invention, there is provided an active matrix type color liquid crystal display device in which the thickness of the liquid crystal layer in each pixel differs for each color component, and the level shift voltage at the end of image signal capture between the pixels. Parasitic capacitance generated between a scanning line connected to the pixel electrode via a switching element and the pixel electrode so that ΔV is equal differs for each pixel corresponding to the color component, and the liquid crystal layer The pixel having a smaller thickness is characterized in that the parasitic capacitance generated for the pixel is larger than the pixel having a thick liquid crystal layer.
According to a fifth aspect of the present invention, in the fourth aspect of the present invention, the pixel electrode is formed on an upper layer side of the scanning line and overlaps with a part of the scanning line in an in-plane direction. Each of the pixels formed is different in area of the overlapping portion corresponding to the color component.
According to a sixth aspect of the present invention, in the invention of the fifth aspect, the area of the overlapping portion is larger in a pixel having a thin liquid crystal layer than in a pixel having a thick liquid crystal layer. It is characterized by being.
The invention described in claim 7 is an active matrix type color liquid crystal display device in which the pixel capacity is different for each color component, and the level shift voltage ΔV at the end of capturing the image signal is equal among the pixels. The parasitic capacitance generated between the scanning electrode connected to the pixel electrode via the switching element and the pixel electrode is different for each pixel corresponding to the color component, and the pixel having the larger pixel capacitance is The area of the overlapping portion is larger than that of a pixel having a small pixel capacity.
The invention according to claim 8 is the invention according to claim 7, wherein the pixel electrode is formed on an upper layer side of the scanning line and overlaps with a part of the scanning line in an in-plane direction. Each of the pixels formed is different in area of the overlapping portion corresponding to the color component.
The invention according to claim 9 is the invention according to claim 8, characterized in that the area of the overlapping portion is larger in the pixel having the larger pixel capacity than in the pixel having the smaller pixel capacity. Ru der things to.

According to the present invention, the level shift voltage ΔV of each of the R, G, and B pixels can be made substantially the same, and therefore flicker can be reduced.

  FIG. 1 is a transmission plan view of a part of an active substrate in a color liquid crystal display device as a first embodiment of the present invention, FIG. 2 is a sectional view taken along line XX of FIG. 1, and FIG. 1 is a cross-sectional view including a counter substrate in a portion along line YY of 1. FIG.

  As shown in FIG. 3, in this color liquid crystal display device, an active substrate 41 and a counter substrate 42 positioned above the active substrate 41 are bonded together via a substantially rectangular frame-shaped sealing material (not shown), The liquid crystal 43 is sealed in a space formed between the sealing material and both the substrates 41 and 42.

  As shown in FIG. 1, a plurality of scanning lines 44 and a plurality of signal lines 45 are provided on the active substrate 41 so as to extend in the row direction and the column direction, respectively. Near each intersection of both lines 44 and 45, thin film transistors 46 connected to both lines 44 and 45 and pixel electrodes 47 driven by the thin film transistors 46 are arranged in a matrix. A storage capacitor line 48 is provided on the opposite side of the scanning line 44 across the pixel electrode 47 so as to overlap the pixel electrode 47 and extend in the row direction.

  Next, a specific structure of the thin film transistor 46 and the like will be described with reference to FIG. A scanning line 44 including the gate electrode 51 is provided at a predetermined location on the upper surface of the active substrate 41 (a surface facing the counter substrate 42), and an auxiliary capacitance line 48 is provided at another predetermined location. Is provided with a gate insulating film 52.

  A semiconductor thin film 53 made of intrinsic amorphous silicon is provided at a predetermined position on the upper surface of the gate insulating film 52. A channel protective film 54 is provided at substantially the center of the upper surface of the semiconductor thin film 53. Contact layers 55 and 56 made of n-type amorphous silicon are provided on both sides of the upper surface of the channel protective film 54 and on the upper surface of the semiconductor thin film 53 on both sides thereof.

  A source electrode 57 is provided on the upper surface of one contact layer 55. A signal line 45 including a drain electrode 58 is provided at a predetermined position on the upper surface of the other contact layer 56 and the upper surface of the gate insulating film 52.

  The gate electrode 51, the gate insulating film 52, the semiconductor thin film 53, the channel protective film 54, the contact layers 55 and 56, the source electrode 57 and the drain electrode 58 constitute a thin film transistor 46.

  A planarizing film 59 is provided on the entire upper surface of the gate insulating film 52 including the thin film transistor 46 and the like. A contact hole 60 is provided in a portion corresponding to a predetermined portion of the source electrode 57 of the planarizing film 59. A pixel electrode 47 made of ITO is provided at a predetermined position on the upper surface of the planarizing film 59. The pixel electrode 47 is connected to the source electrode 57 through the contact hole 60.

  Next, the counter substrate 42 will be described with reference to FIG. A black matrix 61 and R, G, and B color filter elements 62R, 62G, and 62B are provided at predetermined positions on the lower surface of the counter substrate 42 (the surface facing the active substrate 41). Among these, the color filter elements 62R, 62G, and 62B are provided to face the corresponding pixel electrodes 47.

  A common electrode 63 made of ITO is provided on the lower surfaces of the black matrix 61 and the color filter elements 62R, 62G, and 62B. A pixel capacitor portion is formed by the pixel electrode 47, the common electrode 63 disposed opposite to the pixel electrode 47, and the liquid crystal 43 therebetween. In this case, since the area of the pixel electrode 47 is the same, the pixel capacitance of the pixel capacitance portion is the same.

  Here, as shown in FIG. 1, the portion of the auxiliary capacitance line 48 that overlaps the pixel electrode 47 is an auxiliary capacitance electrode 48a. An auxiliary capacity portion is formed by the overlapped portion. In this case, each area of the auxiliary capacitance electrode 48a overlapped with the pixel electrode 47 corresponding to each of the color filter elements 62R, 62G, and 62B shown in FIG. It is getting smaller. Therefore, the auxiliary capacity of the auxiliary capacity unit decreases in the order of R, G, and B.

  By the way, the thicknesses of the color filter elements 62R, 62G, and 62B are different from each other for the purpose of correcting the transmitted light intensity of the liquid crystal 43 depending on the wavelengths of R, G, and B. That is, the thicknesses of the color filter elements 62R, 62G, and 62B are increased in this order.

  On the other hand, the pixel electrodes 47 corresponding to the color filter elements 62R, 62G, and 62B are provided on the planarizing film 59, and thus are arranged on the same plane. Accordingly, the gaps d1, d2, and d3 of the R, G, and B pixels become smaller in this order.

  Next, FIG. 4 shows an equivalent circuit of this color liquid crystal display device. Reference numeral 71 denotes a pixel capacitance portion, 72 denotes an auxiliary capacitance portion, and 73 denotes a parasitic capacitance portion between the gate electrode 51 and the source electrode 57 of the thin film transistor 46. In this case, the common electrode 63 that is an electrode that is not connected to the thin film transistor 46 of the pixel capacitor unit 31 and the auxiliary capacitor electrode 48a that is an electrode that is not connected to the thin film transistor 46 of the auxiliary capacitor unit 32 are common power supply (voltage Vcom). 74.

5A shows the waveform of the voltage applied to the liquid crystal 43, and FIG. 5B shows the scanning voltage (gate pulse) applied to the scanning line 44. FIG. When the pixel capacitance of the pixel capacitor 71 is Clc, the auxiliary capacitor of the auxiliary capacitor 72 is Cs, and the parasitic capacitance of the parasitic capacitor 73 is Cgs, the gate pulse is turned off, and the image signal capture of each pixel is performed. At the time of completion, a level shift voltage ΔV obtained by the following equation is generated in the pixel electrode potential Vsig.
ΔV = (Cgs) / (Cgs + Clc + Cs)

  This level shift voltage ΔV always lowers the pixel electrode potential Vsig by ΔV regardless of the polarity of the signal voltage applied to the signal line 45. Therefore, if the potential Vcom of the common electrode 63 is set lower than the center potential Vc of the signal line 45 by this level shift voltage ΔV, the voltage applied to the liquid crystal 43 has a substantially symmetric waveform. Flicker can be prevented.

  As described above, since the thicknesses of the color filter elements 62R, 62G, and 62B are increased in this order, the gaps d1, d2, and d3 of the R, G, and B pixels are decreased in this order. Yes. Further, the pixel capacitance Clc is expressed by ε · S / d (ε: liquid crystal dielectric constant, S: pixel electrode area, d: gap). Accordingly, the pixel capacitance Clc increases as the gap d decreases.

  On the other hand, as described above, the areas of the auxiliary capacitance electrodes 48a overlapped with the pixel electrodes 47 respectively corresponding to the color filter elements 62R, 62G, and 62B are reduced in this order. Accordingly, the auxiliary capacitance Cs decreases as the area of the auxiliary capacitance electrode 48a decreases.

  If the pixel capacitances of the R, G, and B pixels are Clc1, Clc2, and Clc3, Clc1 <Clc2 <Clc3. Further, when the auxiliary capacitors of the R, G, and B pixels are Cs1, Cs2, and Cs3, Cs1> Cs2> Cs3. Therefore, when the auxiliary capacitance Cs is corrected so that Clc1 + Cs1 = Clc2 + Cs2 = Clc3 + Cs3, the level shift voltages ΔV of the R, G, and B pixels can be made the same. Accordingly, flicker can be reduced.

  Next, as a second embodiment of the present invention, a case where the pixel capacitance Clc is corrected will be described with reference to FIG. In FIG. 6, the areas S1, S2, and S3 of the R, G, and B pixel electrodes 47 become smaller in this order. That is, the lower right corner of the R pixel electrode 47 is not cut out, but the lower right corner of the G pixel electrode 47 is cut out smaller, and the lower right corner of the B pixel electrode 47 is cut slightly larger than that. It is missing. In this case, the area of the auxiliary capacitance electrode 48a is the same.

  Since the pixel capacitance Clc is expressed by ε · S / d, it increases as the gap d decreases, but decreases as the pixel electrode area S decreases. Therefore, when the pixel capacitance Clc is corrected so that S1 / d1 = S2 / d2 = S3 / d3, the level shift voltage ΔV of each of the R, G, and B pixels can be made the same. Accordingly, flicker can be reduced.

  Next, as a third embodiment of the present invention, a case where the parasitic capacitance Cgs is corrected will be described with reference to FIG. In FIG. 7, the overlapping areas of the R, G, B pixel electrodes 47 and the scanning lines 44 increase in this order. In this case, the area of the auxiliary capacitance electrode 48a is the same.

  In this case, the parasitic capacitance Cgs is a total value of the parasitic capacitance between the gate electrode 51 and the source electrode 57 of the thin film transistor 46 and the parasitic capacitance between the overlapping portions of the pixel electrode 47 and the scanning line 44. Among these, the parasitic capacitance between the gate electrode 51 and the source electrode 57 of the thin film transistor 46 is the same for the R, G, and B pixels. On the other hand, the parasitic capacitance between the overlapping portions of the pixel electrode 47 and the scanning line 44 increases in the order of R, G, and B because the overlapping area increases in the order of R, G, and B.

  Therefore, since the level shift voltage ΔV = Cgs / (Cgs + Clc + Cs), even if the pixel capacitance Clc differs depending on the gaps d1, d2, and d3, if this is corrected by the difference in the total parasitic capacitance Cgs, R, G, B The level shift voltage ΔV of each pixel can be the same. Accordingly, flicker can be reduced.

  Next, a case where the parasitic capacitance Cgs is corrected by another method will be described as a fourth embodiment of the present invention. Although not shown, the channel width of each thin film transistor connected to each pixel electrode for R, G, B is increased in this order. That is, the length in the channel width direction of the source electrode of each thin film transistor connected to each pixel electrode for R, G, and B is increased in this order.

  Then, the parasitic capacitance Cgs of each of the R, G, and B pixels in this case increases in this order. Therefore, since the level shift voltage ΔV = Cgs / (Cgs + Clc + Cs), even if the pixel capacitance Clc is different due to the gaps d1, d2, and d3, if this is corrected by the difference in the parasitic capacitance Cgs, R, G, B The level shift voltage ΔV of each pixel can be the same. That is, when the pixel capacitances of the R, G, and B pixels are Clc1, Clc2, and Clc3, and the parasitic capacitances Cgs of the R, G, and B pixels are Cgs1, Cgs2, and Cgs3, Cgs1 / (Cgs1 + Clc1 + Cs) = Cgs2 / (Cgs2 + Clc2 + Cs) = Cgs3 / (Cgs3 + Clc3 + Cs). Thereby, flicker can be reduced.

  In each of the above embodiments, the transmittance of the color filter elements is assumed to be larger in the order of R, G, and B, and the thicknesses of the color filter elements R, G, and B are described as being thicker in this order. However, the present invention is also applicable when the thicknesses of the color filter elements R, G, and B are increased in a different order from the above. In addition, as described above, each of Embodiments 1 to 4 may be applied in a single form, but may be applied in combination with each of Embodiments 1 to 4 as appropriate. The combination in this case may be a combination of any two embodiments, may be a combination of any three embodiments, or may be a combination of all the embodiments. Good.

1 is a transmission plan view of a part of an active substrate in a color liquid crystal display device as a first embodiment of the present invention. Sectional drawing which follows the XX line of FIG. Sectional drawing containing the opposing board | substrate in the part which follows the YY line | wire of FIG. FIG. 3 is a diagram showing an equivalent circuit of the color liquid crystal display device of the first embodiment. The figure which shows the waveform etc. of the voltage applied to the liquid crystal of the color liquid crystal display device of the said 1st Embodiment. FIG. 7 is a transmission plan view of a part of an active substrate in a color liquid crystal display device as a second embodiment of the present invention. FIG. 9 is a transmission plan view of a part of an active substrate in a color liquid crystal display device as a third embodiment of the present invention. FIG. 6 is a transmission plan view of a part of an active substrate in an example of a conventional color liquid crystal display device. Sectional drawing which follows the XX line of FIG. FIG. 9 is a cross-sectional view including a counter substrate in a portion along line YY in FIG. 8. The figure which shows the equivalent circuit of the said conventional color liquid crystal display device. The figure which shows the waveform etc. of the voltage applied to the liquid crystal of the said conventional color liquid crystal display device.

Explanation of symbols

41 active substrate 42 counter substrate 43 liquid crystal 44 scanning line 45 signal line 46 thin film transistor 47 pixel electrode 48 auxiliary capacitance line 48a auxiliary capacitance electrode 62R, 62G, 62B color filter element 63 common electrode

Claims (9)

An active matrix color liquid crystal display device in which the thickness of the color filter is different for each color component, and any one of the color components is associated with each pixel,
Parasitic capacitance generated between the scanning line connected to the pixel electrode via the switching element and the pixel electrode is set as the color component so that the level shift voltage ΔV at the end of capturing the image signal is equal between the pixels. Correspondingly different for each pixel,
A pixel corresponding to a color component having a thick color filter has a larger parasitic capacitance generated for the pixel than a pixel corresponding to a color component having a thin color filter. An active matrix color liquid crystal display device. The pixel electrode is formed on an upper layer side of the scanning line and is formed so as to overlap with a part of the scanning line in an in-plane direction.
2. The active matrix color liquid crystal display device according to claim 1, wherein each pixel has an area of the overlapping portion corresponding to the color component.   The pixel corresponding to a color component having a thick color filter has a larger area of the overlapping portion than a pixel corresponding to a color component having a thin color filter. 3. An active matrix color liquid crystal display device according to 2. An active matrix color liquid crystal display device in which the thickness of the liquid crystal layer in each pixel is different for each color component,
Parasitic capacitance generated between the scanning line connected to the pixel electrode via the switching element and the pixel electrode is set as the color component so that the level shift voltage ΔV at the end of capturing the image signal is equal between the pixels. Correspondingly different for each pixel,
An active matrix type color liquid crystal display device, wherein a pixel having a thin liquid crystal layer has a larger parasitic capacitance generated for the pixel than a pixel having a thick liquid crystal layer. The pixel electrode is formed on an upper layer side of the scanning line and is formed so as to overlap with a part of the scanning line in an in-plane direction.
5. The active matrix color liquid crystal display device according to claim 4, wherein each pixel has an area of the overlapping portion corresponding to the color component.   6. The active matrix type color liquid crystal display device according to claim 5, wherein a pixel having a thin liquid crystal layer has a larger area of the overlapping portion than a pixel having a thick liquid crystal layer. . An active matrix type color liquid crystal display device in which a pixel capacity is different for each color component,
Parasitic capacitance generated between the scanning line connected to the pixel electrode via the switching element and the pixel electrode is set as the color component so that the level shift voltage ΔV at the end of capturing the image signal is equal between the pixels. Correspondingly different for each pixel,
2. An active matrix color liquid crystal display device, wherein a pixel having a larger pixel capacity has a larger area of the overlapping portion than a pixel having a smaller pixel capacity. The pixel electrode is formed on an upper layer side of the scanning line and is formed so as to overlap with a part of the scanning line in an in-plane direction.
8. The active matrix color liquid crystal display device according to claim 7, wherein each pixel has an area of the overlapping portion corresponding to the color component.   9. The active matrix color liquid crystal display device according to claim 8, wherein a pixel having a larger pixel capacity has a larger area of the overlapping portion than a pixel having a smaller pixel capacity.

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