JP4351981B2 - Semiconductor substrate cleaning method and apparatus - Google Patents

Description

  The present invention relates to a semiconductor substrate cleaning method and apparatus for cleaning a semiconductor substrate such as a silicon semiconductor wafer with a processing liquid.

  Conventionally, as this type of apparatus, the processing liquid is stored in the processing tank, the semiconductor substrate is immersed in the processing liquid in an upright position, and the semiconductor substrate is cleaned while supplying gas from a bubbler disposed in the lower part of the processing tank. There is a semiconductor substrate cleaning apparatus (see, for example, Patent Document 1).

Specific processing by such an apparatus includes etching processing, peeling processing, particle removal, metal removal, and the like. More specifically, for example, sulfuric acid is used as the treatment liquid, and this is heated to a high temperature of 120 to 130 ° C or higher. And a semiconductor substrate is immersed in a process liquid, inject | pouring ozone gas as gas from a bubbler. At this time, an unnecessary thin film on the surface of the semiconductor substrate such as a resist film is dissolved or peeled off by a highly oxidizing substance such as peroxodisulfuric acid synthesized from sulfuric acid and ozone supplied as bubbles in the sulfuric acid.
JP 57-180132 A

  However, the conventional example having such a configuration has the following problems.

  That is, the conventional apparatus has a problem that the processing becomes non-uniform in the plane of the semiconductor substrate and processing unevenness occurs.

  The present invention has been made in view of such circumstances, and it is uniform in the plane of the semiconductor substrate by devising the supply of the treatment liquid to the treatment tank and the discharge of the treatment liquid from the treatment tank. An object of the present invention is to provide a semiconductor substrate cleaning method and apparatus capable of performing the above-described processing.

  As a result of intensive studies to solve the above problems, the present inventors have obtained the following knowledge.

  That is, when gas is supplied from a bubbler provided at the lower part of the processing tank, the lateral expansion increases as the bubbles rise toward the liquid surface. In other words, when viewed from the semiconductor substrate surface side, the bubbles rise toward the liquid surface so as to expand toward the top. It has been found that due to the diffusion behavior of the bubbles, the area in contact with the bubbles is different between the lower portion and the upper portion of the semiconductor substrate, and as a result, processing unevenness in the surface of the semiconductor substrate occurs. In addition, since the residence time of bubbles in the upper part of the semiconductor substrate is longer than that in the lower part, the peelability is lower in the lower part of the semiconductor substrate than in the upper part. The present invention based on such knowledge is configured as follows.

  That is, the invention according to claim 1 is a semiconductor substrate cleaning method for cleaning a semiconductor substrate with a processing liquid, wherein the semiconductor substrate is immersed in the processing liquid stored in the processing tank, While the gas is supplied from the provided bubbler, the liquid level of the processing liquid is moved up and down within a predetermined range.

  [Operation / Effect] According to the invention described in claim 1, since the gas level is supplied from the bubbler provided in the processing tank and the liquid level of the processing liquid is moved up and down within a predetermined range, Since the liquid level of the processing liquid in which many bubbles containing gas stays moves up and down along the surface of the semiconductor substrate, the bubbles come into contact evenly regardless of the vertical direction in the surface direction of the semiconductor substrate. In the plane of the semiconductor substrate, uniform cleaning can be performed.

  In addition, before or after cleaning the semiconductor substrate with the processing liquid, gas is supplied from a bubbler provided in the processing tank in a state where the semiconductor substrate is stored in the processing tank without storing the processing liquid in the processing tank. However, it is preferable to heat the semiconductor substrate by the heating means (claim 2). When peeling and cleaning a thin film on a semiconductor substrate, if the semiconductor substrate is heated while supplying gas directly to the semiconductor substrate, the gas such as ozone gas and the thin film formed on the surface of the semiconductor substrate become high temperature, so the peeling is performed.・ Processing time such as cleaning can be shortened.

  Moreover, it is preferable that the semiconductor substrate is heated by a heating means during the cleaning of the semiconductor substrate with the treatment liquid. When a thin film is peeled / cleaned from a semiconductor substrate, the gas such as ozone gas, the processing liquid, and the thin film formed on the surface of the semiconductor substrate become high temperature, so that the processing time for peeling / cleaning can be shortened. .

  The predetermined range is preferably the upper limit position exceeding the upper edge of the semiconductor substrate accommodated in the processing bath from the lower limit position corresponding to the lower portion of the semiconductor substrate accommodated in the processing bath. ). Since there are few bubbles in the lower part of the semiconductor substrate and many in the upper part, by moving the liquid level up and down within these predetermined ranges, the liquid level of the processing liquid is changed from the lower part corresponding to the lower edge upper part of the semiconductor substrate. Since it is displaced to a position exceeding the upper edge, the liquid level can be moved over the entire surface including the lower edge from the upper edge of the semiconductor substrate, and the processing uniformity can be improved over the entire surface of the semiconductor substrate.

  According to a fifth aspect of the present invention, in the semiconductor substrate cleaning apparatus for cleaning a semiconductor substrate with a processing liquid, a processing tank for storing the processing liquid and a lower part in the processing tank are provided, and gas is supplied to the processing tank. A processing liquid supply means for supplying a processing liquid into the processing tank, a processing liquid discharge means for discharging the processing liquid from the processing tank, and a liquid level of the processing liquid in the processing tank is detected. In the state where the semiconductor substrate is immersed in the processing liquid in the processing tank in the detection means, the gas is supplied from the bubbler, and the level of the processing liquid by the processing liquid supply means is monitored while the liquid level is monitored by the detection means. And control means for controlling the supply and discharge of the processing liquid by the processing liquid discharging means to move the liquid level of the processing liquid up and down within a predetermined range.

  [Operation / Effect] According to the invention described in claim 5, the control means supplies the gas from the bubbler while the semiconductor substrate is immersed in the treatment liquid in the treatment tank, and the liquid level is detected by the detection means. While monitoring, the supply of the treatment liquid by the treatment liquid supply means and the discharge of the treatment liquid by the treatment liquid discharge means are controlled to move the liquid level of the treatment liquid up and down within a predetermined range. Then, since the liquid level of the processing liquid in which many bubbles containing gas stays moves up and down along the surface of the semiconductor substrate, the bubbles come to touch evenly regardless of the upper and lower in the surface direction of the semiconductor substrate, As a result, uniform cleaning can be performed within the surface of the semiconductor substrate.

  The predetermined range is preferably an upper limit position exceeding the upper edge of the semiconductor substrate accommodated in the processing bath from the lower limit position corresponding to the lower portion of the semiconductor substrate accommodated in the processing bath. ). Since there are few bubbles in the lower part of the semiconductor substrate and many in the upper part, by moving the liquid level up and down within these predetermined ranges, the liquid level of the processing liquid is changed from the lower part corresponding to the lower edge upper part of the semiconductor substrate. Since it is displaced to a position exceeding the upper edge, the liquid level can be moved over the entire surface including the lower edge from the upper edge of the semiconductor substrate, and the processing uniformity can be improved over the entire surface of the semiconductor substrate.

  The processing liquid discharge means includes a first pipe for discharging the processing liquid from the processing tank and a first flow rate adjusting means for adjusting the flow rate of the first pipe, and the processing liquid supply means performs processing to the processing tank. A second pipe for supplying the liquid, and a second flow rate adjusting means for adjusting the flow rate of the second pipe, and the control means includes a first flow rate adjusting means until the liquid level reaches the lower limit position. It is preferable to make the flow rate larger than the flow rate of the second flow rate adjustment means and make the flow rate of the first flow rate adjustment means smaller than the flow rate of the second flow rate adjustment means until the liquid level reaches the upper limit position ( Claim 7). As the control means controls the flow rate of the first flow rate adjusting means and the flow rate of the second flow rate adjusting means as described above, the liquid level in the processing tank can be efficiently moved up and down.

  Each of the first pipe and the second pipe is connected, and further includes a buffer tank that collects the processing liquid. The processing liquid discharged from the processing tank through the first pipe is the buffer tank and the second pipe. Preferably, the structure is supplied to the treatment tank via a pipe (claim 8). Since the processing liquid in the processing tank is reused also using the buffer tank, consumption of the processing liquid can be suppressed.

  Further, the semiconductor substrate may be heated by a heating means during the cleaning of the semiconductor substrate with the treatment liquid. When a thin film is peeled / cleaned from a semiconductor substrate, the gas such as ozone gas, the processing liquid, and the thin film formed on the surface of the semiconductor substrate become high temperature, so that the processing time for peeling / cleaning can be shortened. .

Further, an opening / closing member for opening and closing the upper portion of the processing tank, and an opening / closing member in a state in which the semiconductor substrate is stored in the processing tank without storing the processing liquid in the processing tank before or after cleaning the semiconductor substrate with the processing liquid. was closed, while the gas is supplied from the bubbler, it is preferable to further comprising a pressurized heat means you heat the semiconductor substrate, a (claim 10). When peeling and cleaning the thin film from the semiconductor substrate, the open / close member is closed and the semiconductor substrate is heated while supplying the gas directly to the semiconductor substrate. Since the thin film has a high temperature, the processing time for peeling and cleaning can be shortened.

  According to the semiconductor substrate cleaning apparatus of the present invention, the processing liquid is supplied from the processing liquid supply means into the processing tank, the semiconductor substrate is immersed therein, the gas is supplied from the bubbler, and the detection means is interposed. While monitoring the liquid level of the processing liquid, the liquid level of the processing liquid is moved up and down within a predetermined range. Therefore, since the liquid level of the processing liquid in which many bubbles containing gas stay is moved up and down along the surface of the semiconductor substrate, the bubbles come into contact evenly regardless of the upper and lower sides in the surface direction of the semiconductor substrate. As a result, uniform cleaning can be performed within the surface of the semiconductor substrate.

  Embodiment 1 of the present invention will be described below with reference to the drawings.

  FIG. 1 is a block diagram illustrating a schematic configuration of the semiconductor substrate cleaning apparatus according to the first embodiment, FIG. 2 is an explanatory diagram of an upper limit position of the liquid level, and FIG. 3 is a lower limit position of the liquid level. It is explanatory drawing of.

  The semiconductor substrate cleaning apparatus includes a processing tank 1. This processing tank 1 is for accommodating a semiconductor substrate W such as a silicon semiconductor wafer and performing a cleaning process. The processing tank 1 includes an inner tank 3 and a recovery tank 5. The inner tank 3 is provided with an injection tube 7 near its bottom. The injection tube 7 has a large number of small holes on its side surface, and supplies the processing liquid to the inner tank 3. For example, sulfuric acid is used as the treatment liquid.

  One end side of the supply pipe 9 is connected to the injection pipe 7 in communication. The other end side of the supply pipe 9 is connected to the buffer tank 11. An on-off valve 13 and a pump 15 are attached to the supply pipe 9 in order from the buffer tank 11 side, that is, from the upstream side. The on-off valve 13 controls opening / closing of the processing liquid flowing through the supply pipe 9, and the pump 15 sends out the processing liquid in the buffer tank 11 from the supply pipe 9. The buffer tank 11 has a volume at least equal to the volume of the inner tank 3 described above, but may have a volume larger than that.

  The injection pipe 7, the pipe 9, and the pump 15 described above correspond to the processing liquid supply means in the present invention. Further, the pipe 9 corresponds to the second pipe in the present invention, and the pump 15 corresponds to the second flow rate adjusting means.

  One end side of the discharge pipe 17 is connected to the collection tank 5 in communication. On the other hand, the other side of the discharge pipe 17 communicates with the buffer tank 11. A pump 19, an inline heater 21, and a filter 23 are disposed in the discharge pipe 17 in this order. The in-line heater 21 heats the processing liquid flowing through the supply pipe 9 to a predetermined temperature. Further, the filter 23 removes particles contained in the processing liquid flowing through the supply pipe 9. Thus, since the apparatus of the present embodiment collects and reuses the processing liquid in the processing tank 1, consumption of the processing liquid can be suppressed.

  The buffer tank 11 is further provided with a waste pipe 25. The waste pipe 25 is used to discard the processing liquid stored in the buffer tank 11 when the on-off valve 27 is opened. Normally, since the on-off valve 27 is closed, the processing liquid at a predetermined temperature circulates in the processing tank 1 through the inner tank 3, the recovery tank 5, the discharge pipe 17, the buffer tank 11, the supply pipe 9, and the injection pipe 7. Supplied.

  A discharge port 29 is provided at the bottom of the inner tank 3. The discharge port 29 is connected to the other end of a pipe 31 whose one end is connected to the buffer tank 11 in communication. The pipe 31 is provided with a flow rate adjustment valve 33.

  The pipe 31 and the flow rate control valve 33 correspond to the processing liquid discharge means, the pipe 31 corresponds to the first pipe in the present invention, and the flow rate control valve 33 corresponds to the first flow rate control means in the present invention.

  The semiconductor substrate W is lowered into the processing tank 1 by a lifter 47 described later. A bubbler 35 is provided below the processing position of the inner tank 3 (indicated by a two-dot chain line in the figure). The bubbler 35 has a tubular shape and has a long axis in the paper surface direction. In this embodiment, two bubblers 35 are arranged side by side. One end side of a pipe 37 is connected to each bubbler 35, and a gas supply source 39 is connected to the other end side of the pipe 37. The pipe 37 is provided with a flow rate adjusting valve 41 for adjusting the flow rate of the gas. The gas supply source 39 stores a gas to be dissolved in bubbles in the processing solution, and ozone gas is used as the gas.

  The inner tank 3 is provided with a liquid level sensor 43 along a part of its inner wall. The liquid level sensor 43 has a function of detecting the liquid level of the processing liquid supplied to the inner tank 3. The liquid level sensor 43 outputs a signal corresponding to the liquid level to the control unit 45. The control unit 45 controls the pump 15, the on-off valve 13, the in-line heater 21, the on-off valves 27 and 42, the flow rate adjustment valve 33, and the flow rate adjustment valve 41 described above.

  The liquid level sensor 43 described above corresponds to the detection unit in the present invention, and the control unit 45 corresponds to the control unit in the present invention.

  The control unit 45 controls the flow rate control valve 41 to supply ozone gas from the bubbler 35 while immersing the semiconductor substrate W in the sulfuric acid in the inner tank 3, and monitors the signal from the liquid level sensor 43 while processing. The liquid level of the liquid is moved up and down within a predetermined range. At that time, the delivery amount of the pump 15 and the flow rate of the flow rate adjustment valve 33 are adjusted, and the liquid level is moved up and down within a predetermined range.

  Here, specific examples of the range in which the liquid level is moved up and down are shown in FIGS.

  That is, as shown in FIG. 2, the upper limit position refers to a position (reference numeral UL) where the liquid level is above the upper edge of the semiconductor substrate W when the semiconductor substrate W is positioned at the processing position. . The general upper limit position UL is a level at which the processing liquid overflows from the inner tank 3 and is recovered in the recovery tank 5. On the other hand, as shown in FIG. 3, the lower limit position refers to a position (reference LL) having a liquid level slightly above the lower edge of the semiconductor substrate W when the semiconductor substrate W is positioned at the processing position. . The lower limit position LL is preferably a position where the lower edge of the semiconductor substrate W is not exposed from the processing liquid for uniform processing, but the lower edge may be exposed for a short time.

  For example, the controller 45 adjusts the pump 15 and the flow rate adjustment valve 33 as follows in order to move the liquid level of the processing liquid up and down between the upper limit position UL and the lower limit position LL.

  That is, until the liquid level reaches the lower limit position LL, the flow rate of the flow rate adjustment valve 33 is gradually increased from the flow rate of the pump 15, and until the liquid level reaches the upper limit position UL, the flow rate adjustment valve 33 is reached. Is gradually made smaller than the flow rate of the pump 15. Thus, by adjusting each part, the liquid level of the processing liquid stored in the inner tank 3 is moved up and down. Further, the number of times of the vertical movement is not particularly limited, but it is preferable to perform the movement up and down several times. Thereby, the in-plane uniformity of processing can be further improved. Further, by operating as described above, the processing liquid in the processing tank 1 can be moved back and forth between the processing tank 1 and the buffer tank 11, and the liquid level in the processing tank 1 can be efficiently moved up and down. Can be made.

  The apparatus further includes a lifter 47 for transporting the semiconductor substrate W. The lifter 47 is configured to be movable up and down over a standby position indicated by a solid line in FIG. 1 and a processing position indicated by a two-dot chain line in FIG. The lifter 47 includes a back plate 49 and a support member 51 protruding from the lower portion of the back plate 49. The support member 51 supports the plurality of semiconductor substrates W in an upright posture.

  Next, the operation of the above-described apparatus will be described with reference to FIG. FIG. 4 is a flowchart showing the operation.

Step S1
With the on-off valves 13 and 27 closed and the flow rate adjusting valves 33 and 41 set to zero, the control unit 45 opens the on-off valve 42 and supplies sulfuric acid as a processing liquid from the processing liquid supply source 60 to the buffer tank. 11 is supplied. Then, the on-off valve 13 is opened and the pump 15 is operated to supply sulfuric acid to the treatment tank 1 at a predetermined flow rate. When sulfuric acid exceeding the capacity of the inner tank 3 is supplied, the sulfuric acid overflows from the inner tank 3 and begins to be collected in the collecting tank 5.

Step S2
The controller 45 detects that the sulfuric acid has reached the upper limit position UL shown in FIG. Then, after a predetermined time, the on-off valve 42 is closed and the supply of sulfuric acid into the buffer tank 11 is stopped.

Step S3
Next, the sulfuric acid stored in the recovery tank 5 is returned to the buffer tank 11 through the discharge pipe 17. At the same time, the in-line heater 21 is set to be heated to a predetermined temperature, and the circulating sulfuric acid is heated. The temperature is, for example, about 150 to 160 ° C.

Step S4
The lifter 47 is lowered from a standby position indicated by a solid line in FIG. 1 to a processing position indicated by a two-dot chain line in FIG. Thereby, the semiconductor substrate W is moved into the hot sulfuric acid.

Step S5
The control unit 45 sets the flow rate adjustment valve 41 to a predetermined flow rate and opens it. As a result, ozone gas is supplied from the gas supply source 39 at a predetermined flow rate through the pipe 37 and supplied from the bubbler 35 into the hot sulfuric acid in the inner tank 3. The state at this time is as shown in FIG. 2, and the ozone gas supplied from the bubbler 35 disposed at the lower part of the inner tank 3 becomes bubbles and rises toward the liquid surface. In that case, since it expands in fan shape from the bubbler 35 toward the liquid surface, the upper part of the semiconductor substrate W has more bubbles to be touched than the lower part, and since the bubbles are stagnant, the amount to be touched is also large. Become.

Step S6
While maintaining the above state for a predetermined time, the semiconductor substrate W is subjected to processing such as peeling and cleaning.

Steps S7 and S8
When the predetermined time has elapsed, the control unit 45 controls the flow rate of the flow rate adjustment valve 33 so that the flow rate gradually becomes larger than the delivery amount of the pump 15. Thereby, as shown in FIG. 3, the liquid level of the hot sulfuric acid in the inner tank 3 starts to fall (the liquid level indicated by a dotted line in FIG. 3). At that time, the liquid level sensor 43 monitors the liquid level of the hot sulfuric acid in the inner tank 3 and determines whether or not the lower limit position LL has been reached.

Step S9
When the liquid level sensor 43 detects that the liquid level of the hot sulfuric acid in the inner tank 3 has reached the lower limit position LL, the pump 15 is stopped and the on-off valve 13 is closed. Further, the flow rate adjustment valve 33 is closed. This state is maintained for a predetermined time.

Step S10
The controller 45 opens the on-off valve 13 and activates the pump 15. Further, the pump 15 is controlled so that the delivery amount of the pump 15 gradually becomes larger than the flow rate of the flow rate adjustment valve 33. Thereby, the liquid level of the hot sulfuric acid in the lower limit position LL reaches the upper limit position UL.

Steps S11 to S14
When the liquid level sensor 43 detects that the liquid level of the hot sulfuric acid has reached the upper limit position UL, the control unit 45 counts the number of times and determines whether or not the predetermined number of times has been reached. If the predetermined number of times has not been reached, the process returns to step S6 and this state is maintained for a predetermined time. On the other hand, if the predetermined number of times has been reached, the process is terminated. Specifically, the flow rate adjustment valve 41 is closed at a flow rate of zero, the pump 15 is stopped, the on-off valve 13 is closed, and the flow rate adjustment valve 33 is closed. Then, the lifter 47 is moved from the processing position to the standby position, and the semiconductor substrate W is lifted from the inner tank 3 and carried out.

  By operating as described above, the liquid level of hot sulfuric acid in which many bubbles containing ozone gas are retained moves up and down along the semiconductor substrate surface W. Air bubbles can be touched evenly. Therefore, the processing can be performed uniformly in the plane of the semiconductor substrate W.

  Next, Embodiment 2 of the present invention will be described with reference to the drawings.

  FIG. 5 shows a main part of the semiconductor substrate cleaning apparatus according to the second embodiment.

  The present embodiment apparatus is characterized in that in addition to the apparatus of the first embodiment, an opening / closing cover 61 and a heating mechanism 63 are provided.

  The open / close cover 61 is configured such that two covers 65 corresponding to the open / close member in the present invention can be opened and closed around a horizontal axis so as to close at least the inner tub 3. Further, a heating mechanism 63 corresponding to the heating means in the present invention is provided on the side surface of the inner tank 3. The side surface of the inner tub 3 is composed of a member that transmits the irradiation light of the heating lamp 67. Further, the heating mechanism 63 is controlled by the control unit 45 in the amount of light irradiation.

  In addition, it may replace with said heating lamp 67 and the structure which arrange | positions the heater which heats the inner tank 3 from a side surface may be employ | adopted.

  In the apparatus configured as described above, the heating mechanism 63 is used for the semiconductor substrate W before and after the process such as cleaning of the semiconductor substrate W with sulfuric acid, and during the process of moving the liquid surface up and down as follows. Heat treatment is performed.

  When the heating mechanism 63 is used before and after the treatment, the open / close cover 61 is closed and the flow rate adjustment valve 41 is set to a predetermined flow rate without storing sulfuric acid in the inner tank 3. Ozone gas is supplied to the inner tank 3. At the same time, when the semiconductor substrate W is heated by irradiating light from the heating lamp 67 of the heating mechanism 63, the semiconductor substrate W reacts with ozone gas at a high temperature, and the processing such as peeling and cleaning of the semiconductor substrate W is promoted. Time is shortened.

  When the heating mechanism 63 is used during processing, the open / close cover 61 is closed in a state where the semiconductor substrate W is set at the processing position in the processing tank 1, the processing tank 1 is closed, and the flow rate adjustment valve 41 is set to a predetermined value. The flow rate is set, and ozone gas is supplied from the gas supply source 39 to the inner tank 3. At the same time, the semiconductor substrate W is heated by irradiating light from the heating lamp 67 of the heating mechanism 63. Further, as in Example 1, the liquid level of sulfuric acid is raised and lowered. As a result, the surface of the semiconductor substrate W is exposed to the ozone gas atmosphere with a thin layer of sulfuric acid attached, so that the reactive species generated by the reaction of a large amount of ozone gas and ozone diffuse through the thin sulfuric acid solution film, and the processing reaction is remarkable. Promoted. Further, since the temperature does not decrease even in the portion of the semiconductor substrate W that is not immersed in sulfuric acid, the processing speed is not deteriorated due to the temperature decrease of the reaction site, so that the processing speed is further increased.

  Therefore, since the treatment reaction with ozone gas is promoted by the above configuration, the treatment time can be shortened.

  Next, Embodiment 3 of the present invention will be described with reference to FIG.

  Although the basic configuration is the same as that of the first embodiment, the processing liquid collected in the buffer tank 11 is configured to be able to flow through the circulation pipe 71, and the processing liquid is supplied by the circulation pump 73 and the inline heater 75 controlled by the control unit 45. The ability to circulate and adjust temperature has been added. Thereby, the processing liquid in the buffer tank 11 can be made uniform. Therefore, since a treatment liquid having a stable temperature can be supplied from the injection tube 7 to the inner tank 3, a stable treatment can be realized.

  The present invention is not limited to the above-described embodiment, and can be modified as follows.

  (1) In each of the embodiments described above, sulfuric acid is exemplified as the treatment liquid and ozone gas is exemplified as the gas. However, instead of these, different ones may be used for the treatment.

  (2) Although the pump 15 is employed as the second flow rate adjusting means, a flow rate adjusting valve may be used instead. Moreover, it is good also as a structure which uses a flow control valve and the pump 15 together.

  (3) Although the flow rate adjusting valve 33 is employed as the first flow rate adjusting means, a pump may be employed instead. Moreover, it is good also as a structure which uses the flow control valve 33 and a pump together.

  (4) Although the recovery tank 5 is provided and the processing liquid overflowing from the inner tank 3 is recovered and circulated, the processing liquid overflowing the recovery tank 5 may be discarded without being circulated.

  (5) Although the buffer tank 11 is provided in the above configuration, a configuration may be adopted in which the processing liquid is discarded from the processing tank 1 and the liquid level is lowered without including the buffer tank 11.

1 is a block diagram illustrating a schematic configuration of a semiconductor substrate cleaning apparatus according to Embodiment 1. FIG. It is explanatory drawing about the upper limit position of a liquid level. It is explanatory drawing about the lower limit position of a liquid level. It is a flowchart which shows operation | movement. FIG. 6 is a diagram illustrating a main part of a semiconductor substrate cleaning apparatus according to a second embodiment. FIG. 10 is a block diagram illustrating a schematic configuration of a semiconductor substrate cleaning apparatus according to a third embodiment.

Explanation of symbols

W ... Semiconductor substrate 1 ... Processing tank 3 ... Inner tank 5 ... Recovery tank 7 ... Injection pipe 9 ... Supply pipe 11 ... Buffer tank 15 ... Pump 17 ... Discharge pipe 18 ... Circulation pipe 31 ... Pipe 33 ... Flow control valve 35 ... Bubbler 37 ... Piping 43 ... Liquid level sensor 45 ... Control unit 47 ... Lifter UL ... Upper limit position LL ... Lower limit position 60 ... Treatment liquid supply source 63 ... Heating mechanism 65 ... Cover

Claims (10)

In a semiconductor substrate cleaning method of cleaning a semiconductor substrate with a processing liquid,
In a state where the semiconductor substrate is immersed in the processing liquid stored in the processing tank, the liquid level of the processing liquid is moved up and down within a predetermined range while gas is supplied from a bubbler provided in the processing tank. A method for cleaning a semiconductor substrate. The method for cleaning a semiconductor substrate according to claim 1,
Gas is supplied from a bubbler provided in the processing tank in a state where the semiconductor substrate is stored in the processing tank without storing the processing liquid in the processing tank before or after cleaning with the processing liquid for the semiconductor substrate. A method for cleaning a semiconductor substrate, wherein the semiconductor substrate is heated by a heating means. The method for cleaning a semiconductor substrate according to claim 1,
A method for cleaning a semiconductor substrate, comprising: heating the semiconductor substrate with a heating unit during cleaning of the semiconductor substrate with a treatment liquid. In the cleaning method of the semiconductor substrate according to any one of claims 1 to 3,
The predetermined range is the upper limit position exceeding the upper edge of the semiconductor substrate accommodated in the processing tank from the lower limit position corresponding to the lower part of the semiconductor substrate accommodated in the processing tank. Substrate cleaning method. In a semiconductor substrate cleaning apparatus for cleaning a semiconductor substrate with a processing liquid,
A treatment tank for storing the treatment liquid;
A bubbler that is provided in the lower part of the processing tank and supplies gas to the processing tank;
Treatment liquid supply means for supplying a treatment liquid into the treatment tank;
Treatment liquid discharge means for discharging the treatment liquid from the treatment tank;
Detecting means for detecting a liquid level of the processing liquid in the processing tank;
While the semiconductor substrate is immersed in the processing liquid in the processing tank, the gas is supplied from the bubbler and the level of the liquid level is monitored by the detection means, while the supply of the processing liquid by the processing liquid supply means and the processing are performed. Control means for controlling the discharge of the treatment liquid by the liquid discharge means to move the liquid level of the treatment liquid up and down within a predetermined range;
An apparatus for cleaning a semiconductor substrate, comprising: The semiconductor substrate cleaning apparatus according to claim 5,
The predetermined range is the upper limit position exceeding the upper edge of the semiconductor substrate accommodated in the processing tank from the lower limit position corresponding to the lower part of the semiconductor substrate accommodated in the processing tank. Substrate cleaning device. The semiconductor substrate cleaning apparatus according to claim 6,
The treatment liquid discharge means comprises a first pipe for discharging the treatment liquid from the treatment tank, and a first flow rate adjustment means for adjusting the flow rate of the first pipe,
The processing liquid supply means includes a second pipe for supplying a processing liquid to the processing tank, and a second flow rate adjusting means for adjusting a flow rate of the second pipe,
The control means makes the flow rate of the first flow rate adjusting means larger than the flow rate of the second flow rate adjusting means until the liquid level reaches the lower limit position, and until the liquid level reaches the upper limit position. An apparatus for cleaning a semiconductor substrate, wherein the flow rate of the first flow rate adjusting means is made smaller than the flow rate of the second flow rate adjusting means. The semiconductor substrate cleaning apparatus according to claim 7,
Each of the first pipe and the second pipe is connected, and further comprises a buffer tank for collecting the processing liquid,
The semiconductor substrate cleaning apparatus, wherein the processing liquid discharged from the processing tank through the first pipe is supplied to the processing tank through the buffer tank and the second pipe. In the semiconductor substrate cleaning apparatus according to any one of claims 5 to 8,
A semiconductor substrate cleaning apparatus, further comprising heating means for heating the semiconductor substrate in a state where the semiconductor substrate is immersed in a processing solution in the processing tank. In the semiconductor substrate cleaning apparatus according to any one of claims 5 to 8,
An opening and closing member for opening and closing the upper portion of the treatment tank;
Before or after cleaning the semiconductor substrate with the processing liquid, with the semiconductor substrate stored in the processing tank without storing the processing liquid in the processing tank, the open / close member is closed, and gas is supplied from the bubbler. while supplied, the pressurized heat means you heat the semiconductor substrate,
An apparatus for cleaning a semiconductor substrate, further comprising:

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