JP4355446B2 - Electron beam exposure apparatus and electron beam forming member - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an electron beam exposure apparatus and an electron beam shaping member. In particular, the present invention relates to an electron beam exposure apparatus and an electron beam forming member having a cooling function.
[0002]
[Prior art]
In an electron beam exposure apparatus that exposes a pattern on a wafer with a plurality of electron beams, a slit that shapes the cross-sectional shape of the electron beam is irradiated with the plurality of electron beams to shape the cross-sectional shape of the plurality of electron beams. .
[0003]
[Problems to be solved by the invention]
However, the slit for shaping the cross-sectional shape of a plurality of electron beams has a problem that the temperature rises when irradiated with the plurality of electron beams, and the generated heat causes damage and deformation.
[0004]
Therefore, an object of the present invention is to provide an electron beam exposure apparatus and an electron beam shaping member that can solve the above-described problems. This object is achieved by a combination of features described in the independent claims. The dependent claims define further advantageous specific examples of the present invention.
[0005]
[Means for Solving the Problems]
In other words, according to the first aspect of the present invention, there is provided an electron beam exposure apparatus that exposes a pattern on a wafer with a plurality of electron beams, an electron beam generating unit that generates a plurality of electron beams, and a plurality of electron beams. A first electron beam shaping member for shaping a cross-sectional shape, the first electron beam shaping member comprising: a base material; and a plurality of shaping openings provided in the base material for shaping the cross-sectional shape of the plurality of electron beams. And a first cooling path provided on the base material through which a coolant for cooling the base material passes.
[0006]
The plurality of shaping openings are provided along a first direction that is an electron beam irradiation direction, and the first cooling path is a direction substantially perpendicular to the first direction between the plurality of shaping openings. It may be provided along the second direction.
[0007]
A second cooling path provided on a second surface that is substantially perpendicular to the first direction and that is a surface inside the substrate that is substantially parallel to the first surface that is inside the substrate including the first cooling path; You may have. The second cooling path may be provided along a third direction substantially perpendicular to the first direction and the second direction.
[0008]
The plurality of molding openings include a first molding opening and a second molding opening that sandwich the first cooling path, and the first electron beam molding member sandwiches the first molding opening on the first surface. A third cooling path provided at a position facing the first cooling path, and a fourth cooling path provided at a position facing the second cooling path across the second molding opening on the second surface. Furthermore, you may have.
[0009]
The electron beam shaping member has a third shaping opening provided at a position facing the first shaping opening across the second cooling path, and opposed to the second shaping opening across the second cooling path, You may further have the 4th shaping | molding opening provided in the position which opposes a 3rd shaping | molding opening across 1 cooling path.
[0010]
The electron beam shaping member may have a plurality of shaping openings provided in a lattice shape, and the first cooling path and the second cooling path may be provided between the plurality of shaping openings. The first shaping opening may be provided so that the cross-sectional area of the first shaping opening decreases along the irradiation direction of the plurality of electron beams.
[0011]
You may further provide the refrigerant | coolant adjustment part which adjusts the quantity of the refrigerant | coolant supplied to a 1st cooling path. The temperature acquisition part which acquires the temperature of a base material may further be provided, and a refrigerant | coolant adjustment part may adjust the quantity of the refrigerant | coolant supplied to a 1st cooling path based on the temperature of a base material.
[0012]
The electron beam forming member has a plurality of first cooling paths, the temperature acquisition unit acquires temperatures at a plurality of positions corresponding to the plurality of first cooling units in the substrate, and the refrigerant adjustment unit You may adjust the quantity of the refrigerant | coolant supplied to each of several 1st cooling path based on each of the temperature of several position.
[0013]
A cooling member provided adjacent to the second electron beam shaping member; a second electron beam shaping member that shapes the cross-sectional shape of the plurality of electron beams that have passed through the first electron beam shaping member; And a base material, a plurality of passage openings provided in the base material through which a plurality of electron beams pass, and a cooling path provided in the base material through which a coolant for cooling the base material passes. Good.
[0014]
According to the second aspect of the present invention, there is provided an electron beam forming member for forming a plurality of electron beam cross-sectional shapes, and a plurality of base material and a plurality of electron beam cross-sectional shapes provided on the base material. And a cooling path provided in the base material through which a coolant for cooling the base material passes.
[0015]
The molding opening may be provided so that the cross-sectional area of the molding opening decreases along the direction in which the molding opening penetrates.
[0016]
The above summary of the invention does not enumerate all necessary features of the present invention, and sub-combinations of these feature groups can also be the invention.
[0017]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows a configuration of an electron beam exposure apparatus 100 according to an embodiment of the present invention. The electron beam exposure apparatus 100 includes an exposure unit 150 that performs a predetermined exposure process on a wafer with an electron beam, and a control system 140 that controls the operation of each component included in the exposure unit 150.
[0018]
The exposure unit 150 generates a plurality of electron beams inside the housing 8 and forms an electron beam cross-sectional shape as desired, and whether to irradiate the wafer 44 with the plurality of electron beams. There is provided an electron optical system including an irradiation switching means 112 that switches independently for each electron beam, and a wafer projection system 114 that adjusts the direction and size of the pattern image transferred to the wafer 44. The exposure unit 150 includes a stage system including a wafer stage 46 on which a wafer 44 whose pattern is to be exposed is placed, and a wafer stage drive unit 48 that drives the wafer stage 46. Further, the exposure unit 150 includes an electron detection unit 40 that detects secondary electrons, reflected electrons, and the like emitted from the mark unit by an electron beam applied to the mark unit provided on the wafer 44 or the wafer stage 46. The electron detection unit 40 outputs a detection signal corresponding to the detected amount of electrons to the reflected electron processing unit 94.
[0019]
The electron beam shaping means 110 includes an electron beam generator 10 that generates a plurality of electron beams, a first electron beam shaping member 14, a second electron beam shaping member 15, and a third electron beam that shape the cross-sectional shape of the electron beam. A shaping member 22, a fixing member 13 for fixing the second electron beam shaping member 15, a cooling member 17 for cooling the second electron beam shaping member 15, and a plurality of electron beams are individually focused to form a plurality of electron beams. A first multi-axis electron lens 16 that adjusts the focal point of the first electron beam, and a first shaping deflection unit 18 and a second shaping deflection unit 20 that independently deflect a plurality of electron beams that have passed through the second electron beam shaping member 15. The fixing member 13 has a plurality of spring parts, and presses the spring parts to 15 to press the second electron beam forming member 15 against the cooling member 17 and fix the second electron beam forming member. It is preferable.
[0020]
The irradiation switching unit 112 focuses the plurality of electron beams independently, and adjusts the focus of the plurality of electron beams, and deflects each of the plurality of electron beams independently to each other. A blanking electrode array 26 that switches whether or not the beam 44 is irradiated to each electron beam independently and a plurality of openings that allow the electron beam to pass therethrough are deflected by the blanking electrode array 26. An electron beam shielding member 28 for shielding the electron beam. In other examples, the blanking electrode array 26 may be a blanking aperture array device.
[0021]
The wafer projection system 114 focuses the plurality of electron beams independently, a third multi-axis electron lens 34 for reducing the irradiation diameter of the electron beam, and the plurality of electron beams independently focuss the plurality of electron beams. A fourth multi-axis electron lens 36 that adjusts the focal point of the light beam, a deflection unit 38 that deflects a plurality of electron beams to desired positions on the wafer 44 independently of each electron beam, and an objective lens for the wafer 44 And a fifth multi-axis electron lens 52 that focuses a plurality of electron beams independently.
[0022]
The control system 140 includes an individual control unit 120 and an overall control unit 130. The individual control unit 120 includes an electron beam control unit 80, a multi-axis electron lens control unit 82, a shaping deflection control unit 84, a blanking electrode array control unit 86, a deflection control unit 92, and a reflected electron processing unit 94. And a wafer stage control unit 96. The overall control unit 130 is, for example, a workstation, and performs overall control of each control unit included in the individual control unit 120.
[0023]
The electron beam control unit 80 controls the electron beam generation unit 10. The multi-axis electron lens control unit 82 includes a first multi-axis electron lens 16, a second multi-axis electron lens 24, a third multi-axis electron lens 34, a fourth multi-axis electron lens 36, and a fifth multi-axis electron lens 52. Control the current supplied. The shaping deflection control unit 84 controls the first shaping deflection unit 18 and the second shaping deflection unit 20. The blanking electrode array control unit 86 controls the voltage applied to the deflection electrodes included in the blanking electrode array 26. The deflection control unit 92 controls the voltage applied to the deflection electrodes included in the plurality of deflectors included in the deflection unit 38. The reflected electron processing unit 94 notifies the overall control unit 130 of the detection signal output from the electron detection unit 40. The wafer stage control unit 96 controls the wafer stage driving unit 48 to move the wafer stage 46 to a predetermined position.
[0024]
An operation of the electron beam exposure apparatus 100 according to the present embodiment will be described. First, the electron beam generator 10 generates a plurality of electron beams. The first electron beam forming member 14 is generated by the electron beam generating unit 10, and a plurality of electron beams irradiated on the first electron beam forming member 14 are provided with a plurality of openings provided in the first electron beam forming member 14. It is molded by passing through. Then, the second electron beam shaping member 15 is provided on the second electron beam shaping member 15 by passing the first electron beam shaping member 14 and irradiating the second electron beam shaping member 15 with the plurality of electron beams. Molding is performed by passing through a plurality of openings. In another example, a plurality of electron beams may be generated by further including means for dividing the electron beam generated by the electron beam generator 10 into a plurality of electron beams.
[0025]
The first multi-axis electron lens 16 independently focuses a plurality of rectangular shaped electron beams and independently adjusts the focus of the electron beam with respect to the third electron beam shaping member 22 for each electron beam. The first shaping deflector 18 independently deflects the plurality of electron beams shaped in a rectangular shape by the second electron beam shaping member 15 so as to irradiate a desired position on the third electron beam shaping member 22. .
[0026]
The second shaping deflection unit 20 deflects the plurality of electron beams deflected by the first shaping deflection unit 18 in directions substantially perpendicular to the third electron beam shaping member 22, respectively. Irradiate. The third electron beam forming member 22 including a plurality of openings having a rectangular shape is desired to irradiate the wafer 44 with a plurality of electron beams having a rectangular cross-sectional shape irradiated to the third electron beam forming member 22. Further, an electron beam having a cross-sectional shape is formed. In another example, the third electron beam shaping member 22 may be a block mask.
[0027]
The second multi-axis electron lens 24 focuses a plurality of electron beams independently, and independently adjusts the focus of the electron beam with respect to the blanking electrode array 26. The plurality of electron beams whose focal points are adjusted by the second multi-axis electron lens 24 pass through the plurality of apertures included in the blanking electrode array 26.
[0028]
The blanking electrode array control unit 86 controls whether or not to apply a voltage to the deflection electrodes provided in the vicinity of each aperture in the blanking electrode array 26. The blanking electrode array 26 switches whether to irradiate the wafer 44 with the electron beam based on the voltage applied to the deflection electrode.
[0029]
The electron beam that is not deflected by the blanking electrode array 26 passes through the third multi-axis electron lens 34. The third multi-axis electron lens 34 reduces the electron beam diameter of the electron beam that passes through the third multi-axis electron lens 34. The reduced electron beam passes through an opening included in the electron beam shielding member 28. The electron beam shielding member 28 shields the electron beam deflected by the blanking electrode array 26. The electron beam that has passed through the electron beam shielding member 28 is incident on the fourth multi-axis electron lens 36. The fourth multi-axis electron lens 36 individually focuses the incident electron beams and adjusts the focus of the electron beams with respect to the deflecting unit 38. The electron beam whose focus is adjusted by the fourth multi-axis electron lens 36 is incident on the deflecting unit 38.
[0030]
The deflection control unit 92 controls a plurality of deflectors included in the deflection unit 38 and independently deflects each electron beam incident on the deflection unit 38 to a position where the wafer 44 is to be irradiated. The fifth multi-axis electron lens 52 adjusts the focal point of each electron beam passing through the fifth multi-axis electron lens 52 with respect to the wafer 44. Each electron beam having a cross-sectional shape to be irradiated to the wafer 44 is irradiated to a desired position to be irradiated to the wafer 44.
[0031]
During the exposure process, the wafer stage drive unit 48 preferably continuously moves the wafer stage 46 in a certain direction based on an instruction from the wafer stage control unit 96. Then, in accordance with the movement of the wafer 44, the cross-sectional shape of the electron beam is formed into a shape to be irradiated onto the wafer 44, an aperture through which the electron beam to be irradiated onto the wafer 44 is passed, and each electron is deflected by the deflection unit 38. By deflecting the beam to a position to be irradiated on the wafer 44, a desired circuit pattern can be exposed on the wafer 44.
[0032]
FIG. 2 shows a configuration of the first electron beam forming member 14 according to the present embodiment. FIG. 2A is a top view of the first electron beam shaping member 14. FIG. 2B shows a cross section of the first electron beam forming member 14 and a supply system for supplying a coolant to the cooling path 210. The first electron beam forming member 14 includes a base material 200, a plurality of forming openings 220 provided in the base material 200 for forming cross-sectional shapes of a plurality of electron beams, and a base material provided in the base material 200. And a cooling path 210 through which a refrigerant 230 that cools 200 passes. The plurality of shaping openings 220 are provided along the electron beam irradiation direction, and the cooling path 210 is provided between the plurality of shaping openings 220 along a direction substantially perpendicular to the electron beam irradiation direction. Is preferred. Moreover, it is preferable that the shaping | molding opening part 220 is provided so that the cross-sectional area of the shaping | molding opening part 220 may become small along the direction which the shaping | molding opening part 220 penetrates. That is, it is preferable that the shaping opening 220 is provided so that the cross-sectional area of the shaping opening 220 is reduced along the electron beam irradiation direction. The first electron beam forming member 14 is preferably formed of a metal having good heat conduction and low density. Further, the first electron beam forming member 14 is preferably coated on the surface with a metal such as platinum.
[0033]
Further, the electron beam exposure apparatus 100 adjusts the amount of the refrigerant supply unit 240 that supplies the refrigerant 230 to the cooling path 210 of the first electron beam shaping member 14 and the amount of the refrigerant 230 that the refrigerant supply unit 240 supplies to the cooling path 210. It further includes a refrigerant adjustment unit 250, a temperature acquisition unit 260 that acquires the temperature of the base material 200, and a cooling pipe 270 that connects the refrigerant supply unit 240 and the cooling path 210. The temperature acquisition unit 260 acquires the temperature of the base material 200 using a means for measuring the temperature of the base material 200 and notifies the refrigerant adjustment unit 250 of the temperature. In addition, the temperature acquisition unit 260 may acquire the temperatures at a plurality of locations on the substrate 200 and notify the refrigerant adjustment unit 250 of the temperatures. Next, the refrigerant adjustment unit 250 controls the refrigerant supply unit 240 based on the temperature of the base material 200 acquired by the temperature acquisition unit 260, adjusts the amount of refrigerant supplied to the cooling path 210, and selects the base material 200. To control the temperature.
[0034]
In the electron beam exposure apparatus 100 according to the present embodiment, by controlling the temperature of the first electron beam forming member 14, damage, deformation, and the like of the first electron beam forming member 14 can be suppressed. Therefore, according to the electron beam exposure apparatus 100 according to the present embodiment, the electron beam cross-sectional shape can be accurately formed, and the change in the shape of the electron beam irradiated on the wafer can be reduced. Further, by providing the shaping opening 220 so that the cross-sectional area of the shaping opening 220 decreases along the irradiation direction of the electron beam, the area where the electron beam is irradiated onto the substrate 200 can be widened. Therefore, the first electron beam shaping member 14 can be efficiently cooled.
[0035]
FIG. 3 shows a configuration of the cooling member 17 according to the present embodiment. FIG. 3A is a top view of the cooling member 17. FIG. 3B shows a cross section of the cooling member 17 and a supply system that supplies a refrigerant to the cooling path 310. The cooling member 17 includes a base material 300, a plurality of passage openings 320 provided in the base material 300 through which a plurality of electron beams pass, and a second electron via the base material 300 provided in the base material 300. And a cooling path 310 through which a refrigerant 330 for cooling the beam shaping member 15 passes. The plurality of passage openings 320 are provided along the electron beam irradiation direction, and the cooling path 310 is provided between the plurality of passage openings 320 along a direction substantially perpendicular to the electron beam irradiation direction. Is preferred.
[0036]
The electron beam exposure apparatus 100 also includes a refrigerant supply unit 340 that supplies the refrigerant 330 to the cooling path 310 of the cooling member 17 and a refrigerant adjustment unit 350 that adjusts the amount of the refrigerant 330 that the refrigerant supply unit 350 supplies to the cooling path 310. And a temperature acquisition unit 360 that acquires the temperature of the substrate 300, and a cooling pipe 370 that connects the refrigerant supply unit 340 and the cooling path 310. The temperature acquisition unit 360 acquires the temperature of the base material 300 using means for measuring the temperature of the base material 300 and notifies the refrigerant adjustment unit 350 of the temperature. Next, the refrigerant adjustment unit 350 controls the refrigerant supply unit 340 based on the temperature of the base material 300 acquired by the temperature acquisition unit 360, adjusts the amount of refrigerant supplied to the cooling path 310, and selects the base material 300 as desired. To control the temperature. And the base material 300 controlled to desired temperature cools the 2nd electron beam shaping member 15 to desired temperature.
[0037]
In the electron beam exposure apparatus 100 according to the present embodiment, by cooling the cooling member 17 and controlling the temperature of the second electron beam forming member 15, damage, deformation, and the like of the second electron beam forming member 14 can be suppressed. it can. Therefore, according to the electron beam exposure apparatus 100 according to the present embodiment, the electron beam cross-sectional shape can be accurately formed, and the change in the shape of the electron beam irradiated on the wafer can be reduced.
[0038]
Hereinafter, another example of the configuration of the first electron beam shaping member 14 according to the present embodiment will be described, but the cooling member 17 has the same configuration as that of the other example of the first electron beam shaping member 14 described below. You may have.
[0039]
FIG. 4 shows another example of the configuration of the first electron beam forming member 14 according to the present embodiment. FIG. 4A is a top view of the first electron beam shaping member 14. FIG. 4B shows a cross section of the first electron beam shaping member 14 and a supply system for supplying a coolant to the cooling paths 210 and 215. The first electron beam shaping member 14 in the present example is a cooling provided on the first surface inside the substrate 200 that is substantially perpendicular to the electron beam irradiation direction and is at a first depth from the surface of the substrate 200. It has a path 210 and a cooling path 215 provided on a second surface inside the substrate 200 that is substantially parallel to the first surface and has a second depth from the surface of the substrate 200. The cooling path 215 is preferably provided along a direction substantially perpendicular to the irradiation direction of the electron beam and the direction along the cooling path 210. Further, the first electron beam shaping member 14 has a plurality of shaping openings 220 provided in a lattice shape, and the cooling path 210 and the cooling path 215 are provided between each of the plurality of shaping openings 220. Is preferred.
[0040]
The electron beam exposure apparatus 100 in this example includes a refrigerant supply unit 240 that supplies the refrigerant 230 to the cooling path 210 of the first electron beam forming member 14, a refrigerant supply unit 245 that supplies the refrigerant 235 to the cooling path 215, and refrigerant supply The refrigerant adjustment unit 250 that adjusts the amount of the refrigerant 230 that the unit 240 supplies to the cooling path 210 and the amount of the refrigerant 235 that the refrigerant supply unit 245 supplies to the cooling path 215, and the temperature acquisition unit that acquires the temperature of the substrate 200 260, a cooling pipe 270 that connects the refrigerant supply unit 240 and the cooling path 210, and a cooling pipe 275 that connects the refrigerant supply unit 245 and the cooling path 215. The refrigerant adjustment unit 250 adjusts the amount of refrigerant supplied to the cooling path 210 and the cooling path 215 based on the temperature of the base material 200 acquired by the temperature acquisition unit 260, and controls the base material 200 to a desired temperature. In the electron beam exposure apparatus 100 according to this example, the first electron beam forming member is flowed around the plurality of forming openings 220 for forming the electron beam using the two cooling paths 210 and 215 that are substantially orthogonal to each other. 14 can be efficiently and uniformly cooled.
[0041]
The cooling paths 210 and 215 may have cooling pipes inside the cooling paths 210 and 215, and the refrigerant supply units 240 and 245 may supply the cooling pipe with the cooling pipes. The refrigerant may be a liquid or a gas.
[0042]
FIG. 5 shows another example of the configuration of the first electron beam forming member 14 according to the present embodiment. FIG. 5A is a top view of the first electron beam shaping member 14. FIG. 5B shows a cross section of the first electron beam shaping member 14 and a supply system for supplying a refrigerant to the cooling paths 210a and 210b. It is. The first electron beam shaping member 14 in this example includes a cooling path 210 a and a cooling path 210 b provided to cool different regions in the base material 200 independently. Further, the electron beam exposure apparatus 100 in this example includes a refrigerant supply unit 240a that supplies the refrigerant 230a to the cooling path 210a of the first electron beam forming member 14, a refrigerant supply unit 240b that supplies the refrigerant 230b to the cooling path 210b, The refrigerant adjusting unit 250 that adjusts the amount of the refrigerant 230a that the refrigerant supply unit 240a supplies to the cooling channel 210a and the amount of the refrigerant 230b that the refrigerant supply unit 240b supplies to the cooling channel 210b, the cooling channel 210a and the cooling in the base material 200 A temperature acquisition unit 260 that acquires the temperatures of the areas where the paths 210b are provided, a cooling pipe 270a that connects the refrigerant supply part 240a and the cooling path 210a, and a cooling pipe that connects the refrigerant supply part 240b and the cooling path 210b 270b.
[0043]
The temperature acquisition unit 260 acquires the temperature of the region of the base material 200 where the cooling path 210 a is provided and the temperature of the region of the base material 200 where the cooling path 210 b is provided, and notifies the refrigerant adjustment unit 250 of the temperature. Next, the refrigerant | coolant adjustment part 250 controls the refrigerant | coolant supply part 240a and the refrigerant | coolant supply part 240b based on the temperature of the base material 200 which the temperature acquisition part 260 acquired, and the refrigerant | coolant supplied to each of the cooling path 210a and the cooling path 210b And the substrate 200 is controlled to a desired temperature. In the electron beam exposure apparatus 100 according to this example, the temperature of the first electron beam forming member 14 can be kept uniform by independently controlling the coolant supplied to the plurality of cooling paths 210a and 210b.
[0044]
FIG. 6 shows another example of the configuration of the first electron beam forming member 14 according to the present embodiment. FIG. 6A is a top view of the first electron beam forming member 14. FIG. 6B shows a cross section of the first electron beam shaping member 14 and a supply system for supplying a coolant to the cooling paths 210 and 215. It is. The first electron beam shaping member 14 in this example includes a cooling path 210 provided on a first surface that is substantially perpendicular to the electron beam irradiation direction and has a first depth from the surface of the substrate 200, and And a cooling path 215 provided on a second surface that is substantially parallel to the first surface and has a second depth from the surface of the substrate 200. In addition, the electron beam exposure apparatus 100 in this example includes a cooling pipe 280 provided so that the refrigerant 290 supplied by the refrigerant supply unit 240 passes through the cooling path 210 and the cooling path 215.
[0045]
FIG. 7 is an enlarged view of the first electron beam forming member 14 in this example. FIG. 7A is an enlarged view of the upper surface of the first electron beam forming member 14. FIG. 7B is an enlarged view of a cross section of the first electron beam forming member 14. The first electron beam shaping member 14 in this example has shaping openings 220a, 220b, 220c, and 220d, and cooling paths 210c, 210d, 215a, and 215b. The cooling path 210c is provided between the molding opening 220a and the molding opening 220b on the first surface, which is the surface inside the substrate 200 that is substantially perpendicular to the electron beam irradiation direction. In addition, the cooling path 210d is provided on the first surface at a position facing the cooling path 210c with the molding opening 220a interposed therebetween. The cooling path 215a is provided on a second surface that is a surface inside the substrate that is substantially parallel to the first surface. Moreover, the cooling path 215b is provided in the 2nd surface in the position which opposes the cooling path 215a on both sides of the shaping | molding opening part 220a. The molding opening 220c is provided at a position facing the molding opening 220a with the cooling path 215a interposed therebetween. The molding opening 220d is provided at a position facing the molding opening 220c across the cooling path 210c and facing the molding opening 220b across the cooling path 215a.
[0046]
In another example, the electron beam exposure apparatus 100 may further include a cooling member 17 that cools the third electron beam shaping member 22 and the electron beam shielding member 28. The third electron beam shaping member 22 and the electron beam shielding member 28 may have the same structure as the first electron beam shaping member. In this case, it is desirable that the openings provided in the third electron beam shaping member 22 and the electron beam shielding member 28 have a rectangular shape.
[0047]
As described above, the present invention has been described using the embodiments. However, the above embodiments do not limit the claimed invention, and all combinations of features described in the embodiments are means for solving the invention. It is not always essential. Further, the technical scope of the present invention is not limited to the scope described in the above embodiment. Various modifications or improvements can be added to the above embodiment. It is apparent from the scope of the claims that the embodiments added with such changes or improvements can be included in the technical scope of the present invention.
[0048]
【The invention's effect】
As is apparent from the above description, according to the electron beam exposure apparatus of the present invention, it is possible to efficiently cool the electron beam shaping member that shapes the cross-sectional shapes of a plurality of electron beams.
[Brief description of the drawings]
FIG. 1 is a diagram showing a configuration of an electron beam exposure apparatus 100 according to an embodiment of the present invention.
FIG. 2 is a diagram showing a configuration of a first electron beam shaping member 14;
FIG. 3 is a diagram showing a configuration of a cooling member 17;
FIG. 4 is a view showing another example of the configuration of the first electron beam forming member 14;
5 is a view showing another example of the configuration of the first electron beam shaping member 14. FIG.
6 is a view showing another example of the configuration of the first electron beam shaping member 14. FIG.
FIG. 7 is an enlarged view of the first electron beam shaping member 14;
[Explanation of symbols]
8 .. Housing 10.. Electron beam generator 13.. Fixing member 14.. First electron beam forming member 15.. Second electron beam forming member 16.. 17 .. Cooling member, 18... 1st shaping deflection part, 20... 2nd shaping deflection part, 22 .. 3rd electron beam shaping member, 24 .. 2nd multi-axis electron lens, 26. Array, 28 .. Electron beam shielding member, 34 .. Third multi-axis electron lens, 36 .. Fourth multi-axis electron lens, 38 .. Deflection unit, 40 .. Electron detection unit, 44. -Wafer stage, 48-Wafer stage drive unit, 52-Fifth multi-axis electron lens, 80-Electron beam control unit, 82-Multi-axis electron lens control unit, 84-Molding deflection control unit, 86・ Blanking electrode array controller, 92 ..Deflection controller, 94 · Backscattered electron processing unit, 96 · · Wafer stage control unit, 100 · · Electron beam exposure device, 110 · · Electron beam shaping means, 112 · · Irradiation switching means, 114 · · Projection system for wafer, 120 · · Individual control , 130 .. Control unit, 140 .. Control system, 150 .. Exposure unit, 200 .. Base material, 300 .. Base material, 210 .. Cooling path, 220 .. Molding opening, 230 .. Refrigerant , 240 .. Refrigerant supply unit, 250 .. Refrigerant adjustment unit, 260 .. Temperature acquisition unit, 270 .. Refrigerant tube, 310 .. Cooling path, 320 .. Passing opening, 330 .. Refrigerant, 340. Supply unit, 350... Refrigerant adjustment unit, 360... Temperature acquisition unit, 370.

Claims (9)

An electron beam exposure apparatus that exposes a pattern on a wafer with a plurality of electron beams,
An electron beam generator for generating the plurality of electron beams;
A first electron beam shaping member for shaping a cross-sectional shape of the plurality of electron beams,
The first electron beam shaping member is:
A substrate;
A plurality of forming openings for forming a cross-sectional shape of the plurality of electron beams provided in the base material so as to penetrate along a first direction which is an irradiation direction of the electron beam;
A first cooling path provided between the plurality of molding openings along a second direction which is a direction substantially perpendicular to the first direction and through which a coolant for cooling the base material passes;
A second surface provided on a second surface that is substantially perpendicular to the first direction and that is substantially parallel to a first surface that is a surface inside the substrate including the first cooling path. A cooling path and
A first refrigerant supply unit for supplying refrigerant to the first cooling path;
A second refrigerant supply unit for supplying refrigerant to the second cooling path;
A refrigerant adjustment unit that adjusts an amount of refrigerant supplied to the first cooling path by the first refrigerant supply unit and an amount of refrigerant supplied to the second cooling path by the second refrigerant supply unit, respectively. A featured electron beam exposure apparatus.   2. The electron beam exposure apparatus according to claim 1, wherein the second cooling path is provided along a third direction substantially perpendicular to the first direction and the second direction. The plurality of molding openings include a first molding opening and a second molding opening sandwiching the first cooling path,
The first electron beam shaping member is:
A third cooling path provided at a position facing the first cooling path across the first molding opening in the first surface;
The electron beam according to claim 2, further comprising: a fourth cooling path provided at a position facing the second cooling path across the second shaping opening on the second surface. Exposure device. The electron beam shaping member is
A third molding opening provided at a position facing the first molding opening across the second cooling path;
And a fourth molding opening provided at a position facing the second molding opening across the second cooling path and facing the third molding opening across the first cooling path. The electron beam exposure apparatus according to claim 3. The electron beam shaping member has the plurality of shaping openings provided in a lattice shape,
The electron beam exposure apparatus according to claim 2, wherein the first cooling path and the second cooling path are provided between each of the plurality of forming openings.   4. The electron beam exposure apparatus according to claim 3, wherein the first shaping opening is provided so that a cross-sectional area of the first shaping opening decreases along an irradiation direction of the plurality of electron beams. . A temperature acquisition unit that acquires the temperature of the substrate;
2. The electron beam according to claim 1, wherein the refrigerant adjustment unit adjusts an amount of the refrigerant supplied to the first cooling path and the second cooling path based on the temperature of the base material. Exposure device. The electron beam shaping member has a plurality of the first cooling paths,
The temperature acquisition unit acquires temperatures at a plurality of positions corresponding to the plurality of first cooling units in the base material,
The said refrigerant | coolant adjustment part adjusts the quantity of the said refrigerant | coolant supplied to each of these 1st cooling channels based on each of the said temperature of the said several position of the said base material, The said refrigerant | coolant adjustment part adjusts the quantity of the said refrigerant | coolant supplied to each of these 1st cooling channels. The electron beam exposure apparatus described in 1. An electron beam exposure apparatus that exposes a pattern on a wafer with a plurality of electron beams,
An electron beam generator for generating the plurality of electron beams;
A first electron beam shaping member for shaping a cross-sectional shape of the plurality of electron beams;
A second electron beam shaping member that has a plurality of openings and shapes the cross-sectional shape of the plurality of electron beams that have passed through the first electron beam shaping member by passing the plurality of openings;
A cooling member provided adjacent to the second electron beam shaping member,
The first electron beam shaping member is:
A substrate;
A plurality of molding openings provided in the base material for molding a cross-sectional shape of the plurality of electron beams;
A first cooling path provided on the base material through which a coolant for cooling the base material passes;
The cooling member is
A substrate;
A plurality of passage openings provided in the base material through which the plurality of electron beams pass;
An electron beam exposure apparatus, comprising: a cooling path provided on the base material through which a coolant for cooling the base material passes.

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