JP4364401B2 - Contact misalignment measurement pattern - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a contact misalignment measurement pattern in a wafer manufacturing process of a semiconductor integrated circuit.
[0002]
[Prior art]
In a conventional contact misalignment measurement pattern, a plurality of contacts are arranged on a pattern stacked on a semiconductor substrate according to a predetermined dimensional rule. Input / output electrodes are arranged on each of the plurality of contacts according to a predetermined dimension rule. The conduction state of each contact is individually measured through the input / output electrodes. Based on the measurement result, the contact misalignment amount was detected. Here, the contact is a conductive hole that electrically connects conductive patterns laminated via an insulating layer. The contact misalignment measurement pattern is intended only for measuring the misalignment of contacts on a semiconductor substrate separately from the desired integrated circuit chip in order to measure the misalignment of contacts in the wafer manufacturing process of semiconductor integrated circuits. It is a lamination pattern laminated as.
[0003]
[Problems to be solved by the invention]
Since the input / output electrodes are arranged on each of the plurality of contacts according to a predetermined dimensional rule, the input / output electrode pattern becomes complicated. Furthermore, the problem to be solved remains that the number of terminals is increased in order to individually measure the conductive state of each contact, and a long time is required for the measurement.
[0004]
[Means for Solving the Problems]
The present invention adopts the following configuration in order to solve the above points.
<Configuration 1>
A plurality of PN junctions that are formed on the surface of a semiconductor substrate according to a predetermined rule and generate a recombination current upon receiving laser light, and stacked between the PN junctions so as to transmit laser light. An insulating layer, a wiring layer stacked on the inter-layer insulating layer except for a predetermined portion that transmits the laser light on the PN junction, and a surface of the semiconductor substrate penetrating the inter-layer insulating layer And a plurality of contacts for conducting the wiring layer, and disposing the plurality of contacts on the semiconductor substrate when the misalignment amount of the contacts more than a predetermined amount occurs. Any one of the PN junctions and any of the plurality of contacts are arranged to be conductive, and a specific combination of the conductive PN junction and the contacts is a misalignment of the contacts. Shift amount measurement pattern mating contact, characterized in that it is arranged differently by the large and small.
[0005]
<Configuration 2>
In the contact misalignment measurement pattern according to Configuration 1, when the plurality of contacts are arranged on the semiconductor substrate, a contact misalignment amount of the predetermined amount or more occurs in the X-axis direction. If any of the plurality of PN junctions and any of the plurality of contacts are electrically connected to each other, and the contact misalignment amount of the predetermined amount or more is generated in the Y-axis direction, Any one of the PN junctions and any of the plurality of contacts are arranged to conduct, and a specific combination of the conducting PN junction and the contact is provided for each of the Y-axis direction and the X-axis direction. The contact misalignment amount measurement pattern, wherein the contact misalignment amount is arranged differently depending on the contact misalignment amount.
[0006]
<Configuration 3>
A plurality of PN junctions that are formed on the surface of the semiconductor substrate according to a predetermined rule and generate a recombination current upon irradiation with laser light, and a first laser beam that is laminated on the PN junction and transmits the laser light. An inter-laminar insulating layer, a first wiring layer stacked on the first inter-laminating insulating layer except for a predetermined portion that transmits laser light on the PN junction, and the first wiring A second inter-laminar insulating layer that transmits laser light that is stacked on the layer and a predetermined portion that transmits laser light on the PN junction are stacked on the second inter-laminating insulating layer except for a predetermined portion that transmits the laser light. A plurality of first contacts that connect the surface of the first semiconductor substrate and the wiring layer through the first interlayer insulating layer, Penetrating through the interlaminar insulating layer and the second interlaminar insulating layer, A plurality of second contacts for conducting the surface of the conductor substrate and the second wiring layer, the arrangement of the plurality of first contacts or second contacts on the semiconductor substrate, Any of the plurality of PN junctions and any of the plurality of contacts are arranged to be conductive when a contact misalignment amount of a predetermined amount or more is generated, and the conductive PN junction and the contact are arranged. The contact misalignment amount measurement pattern is characterized in that a specific combination of the contact and the contact is different depending on the contact misalignment amount.
[0007]
<Configuration 4>
In the contact misalignment measurement pattern according to Configuration 3, when the contact misalignment amount of the predetermined amount or more is generated in the X-axis direction, any of the plurality of PN junctions and the plurality of contacts When the first contact or the second contact is arranged to be conductive, and the contact misalignment amount of the predetermined amount or more is generated in the Y-axis direction, the plurality of PN junction portions And the plurality of first contacts or the second contacts are arranged to conduct, and the conducting PN junction and the first contact or the second contact The contact combination is characterized in that a specific combination is arranged so as to differ depending on the amount of misalignment of the contact in the Y-axis direction and the X-axis direction. Les amount measurement pattern.
[0008]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described using specific examples.
<Specific example 1>
FIG. 1 is a configuration diagram (part 1) of the first specific example.
From FIG. 1, the contact misalignment measurement pattern of Example 1 shows the semiconductor substrate 1, the inter-element insulating layer 2, the PN junction portion 3, the inter-stack insulating layer 4, the active region 5, and the wiring layer 6. And a contact 7, a terminal 8, and a back terminal 9.
[0009]
The semiconductor substrate 1 is a portion where a PN junction portion 3 to be described later is formed on the surface according to a predetermined rule. For example, a silicon single crystal substrate or the like is used.
Here, the inter-element insulating layer 2 is an insulating oxide film for insulating a plurality of PN junctions 3 formed on the surface of the semiconductor substrate 1.
[0010]
The PN junction portion 3 is a PN junction diode, and is a portion that generates a recombination current upon irradiation with laser light in the present invention. The arrangement positions of the plurality of PN junctions 3 will be described in detail later with reference to the drawings.
The inter-layer insulating layer 4 is an insulating film that is stacked on the PN junction 3 and transmits laser light. Usually, it is comprised by insulating films, such as a silicon single crystal laminated | stacked by CVD method etc.
[0011]
The active region 5 is a part that removes a film of a wiring layer 6 described later on a part of the inter-layer insulating layer 4 and enables the PN junction 3 to be irradiated with laser light.
The wiring layer 6 is a metal film that is laminated on the inter-laminate insulating layer 4 except for a predetermined portion on the PN junction 3, that is, the active region 5.
The contact 7 is a portion that penetrates the insulating layer 4 between the layers and makes the surface of the semiconductor substrate 1 and the wiring layer 6 conductive. The arrangement positions of the plurality of contacts 7 will be described in detail later with reference to the drawings.
[0012]
Next, detection of the deviation amount using the contact misalignment measurement pattern of specific example 1 will be described.
Before explaining the detection of the deviation amount using the contact misalignment measurement pattern of the specific example 1, in order to clarify the inventive step of the present invention, a comparative example will be given below to detect the deviation amount. explain.
FIG. 2 is a diagram for explaining the principle of a comparative example (part 1).
(A) is a top view, (b) is AA sectional drawing.
The contact misalignment measurement pattern according to the comparative example includes the semiconductor substrate 1, the inter-stack insulating layer 4, the wiring layer 6, the six contacts 7 (for example) C1 to C6, and the active region Z1 on the semiconductor substrate. To Z6 and terminals z1 to z6 on the wiring layer 6.
Since each component is the same as the component of the said specific example 1, description is omitted.
[0013]
From (a), the active regions Z1 to Z6 on the semiconductor substrate are arranged on the semiconductor substrate 1 in a line at a predetermined interval in the X direction.
The inter-stack insulating layer 4 and the wiring layer 6 are stacked on the active regions Z1 to Z6 on the semiconductor substrate. Thereafter, six contacts 7 from C1 to C6 are set collectively on the basis of one screen. Accordingly, the arrangement positions of the six contacts 7 from C1 to C6 are fixed, and the amount of misalignment of the contacts in the manufacturing process is shifted as a whole for all six contacts 7 in one direction. Here, only the shift in the Y direction will be described.
[0014]
As an example of the contact arrangement position, in FIG. 5A, the contact C3 and the contact C4 are arranged apart from Y0 in the Y direction. The contact C3 and the contact C2, and the contact C4 and the contact C5 are arranged apart from each other in the Y direction by Y1. The contact C2 and the contact C1, and the contact C5 and the contact C6 are arranged apart from each other in the Y direction by Y2.
The above Y0 has such a size that neither the contact C3 nor the contact C4 is in contact with the active regions Z1 to Z6 when the contacts C3 and C4 are bridged around the active regions Z1 to Z6 on the semiconductor substrate. Is set.
[0015]
(A) represents the case where the contact misalignment amount is zero. In such a case, the contact C1 and the contact C6, the contact C2 and the contact C5, and the contact C3 and the contact C4 are set at equal intervals with respect to the straight line connecting the active regions Z1 to Z6 on the semiconductor substrate.
[0016]
(B) represents the AA cross section of (a).
The contact C4 is not in contact with the active area Z4. Therefore, when the resistance value between the active region Z4 and the terminal z4 is measured, R = ∞. Similarly, the resistance value between the active region Z1 and the terminal z1, the resistance value between the active region Z2 and the terminal z2, the resistance value between the active region Z3 and the terminal z3, the resistance value between the active region Z5 and the terminal z5, and the active region Z6 All of the resistance values between the terminals z6 are R = ∞. From the above measurement results, it is determined that the amount of deviation in the Y direction of the contact is zero.
[0017]
Next, a case where the contact misalignment amount is detected will be described.
FIG. 3 is a diagram for explaining the principle of the comparative example (part 2).
(A) is a top view, (b) is AA sectional drawing.
As shown in (a), the contact C4 is in contact with the active region Z4. Therefore, when the resistance value between the active region Z4 and the terminal z4 is measured, R≈0. Similarly, the resistance value between the active region Z1 and the terminal z1, the resistance value between the active region Z2 and the terminal z2, the resistance value between the active region Z3 and the terminal z3, the resistance value between the active region Z5 and the terminal z5, and the active region Z6 All of the resistance values between the terminals z6 are R = ∞.
[0018]
From the above measurement results, the amount of displacement in the Y direction of the contact is (Y0−A) / 2 <L <((Y0−A) / 2) + Y1 when the dimension in the Y direction of the terminal is A and the amount of displacement is L. Desired. Similarly, when the resistance value between the active region Z5 and the terminal z5 becomes R = 0, the shift amount is obtained as ((Y0−A) / 2) + Y1 <L <((Y0−A) / 2) + Y1 + Y2. It is done.
That is, between the active region Z1 and the terminal z1, between the active region Z2 and the terminal z2, between the active region Z3 and the terminal z3, between the active region Z4 and the terminal z4, between the active region Z5 and the terminal z5, between the active region Z6 and the terminal z6, The contact misalignment amount can be detected by measuring each resistance value individually.
[0019]
In the comparative example described above, the active region Z1 and the terminal z1, the active region Z2 and the terminal z2, the active region Z3 and the terminal z3, the active region Z4 and the terminal z4, the active region Z5 and the terminal z5, and the active region Z6 It is necessary to individually measure the resistance value between the terminals z6, and the input / output electrode pattern is complicated because the input / output electrodes are arranged in accordance with a predetermined dimensional rule for each of the plurality of contacts. Furthermore, the number of terminals is increased in order to measure the conduction state of each contact individually, and a long time is required for the measurement. In order to solve such a problem, in the contact misalignment measurement pattern of specific example 1, the contact misalignment amount is detected as follows.
[0020]
Returning to FIG. 1 again, detection of the contact misalignment amount of the specific example 1 will be described.
(A) is a top view, (b) is AA sectional drawing.
[0021]
From (a), the PN junctions 3 on the semiconductor substrate 1 (as an example, six from P1 to P6) are arranged on the semiconductor substrate 1 in a row at an interval of X1 in the X direction.
An inter-element insulating layer 2, an inter-layer insulating layer 4, and a wiring layer 6 are stacked on the PN junction 3 on the semiconductor substrate 1. Thereafter, six contacts 7 from C1 to C6 are set collectively on the basis of one screen. Accordingly, the arrangement positions of the six contacts 7 from C1 to C6 are fixed, and the amount of misalignment of the contacts in the manufacturing process is shifted as a whole in all six contacts 7 in one direction. Here, only the shift in the Y direction will be described.
[0022]
As an example of the contact arrangement position, (a), the contact C3 and the contact C4 are arranged apart from Y0 in the Y direction. The contact C3 and the contact C2 and the contact C4 and the contact C5 are arranged apart from each other in the Y direction by Y1. The contact C2 and the contact C1, and the contact C5 and the contact C6 are arranged apart from each other in the Y direction by Y2.
Y0 is set as long as neither the contact C3 nor the contact C4 contacts the PN junction 3 (P3) and the PN junction 3 (P4).
[0023]
(A) represents the case where the contact misalignment amount is zero. In such a case, the contact C1 and the contact C6, the contact C2 and the contact C5, and the contact C3 and the contact C4 with respect to the straight line connecting the PN junction 3 (P1) to the PN junction 3 (P6) on the semiconductor substrate are: Each is set at equal intervals in the Y direction.
[0024]
(B) represents the AA cross section of (a).
Contact C4 is not in contact with PN junction 3 (P4). Here, the PN junction 3 (P4) is irradiated with laser light (b). The laser beam is applied to the PN junction 3 (P4) through the active region 5. The PN junction 3 (P4) irradiated with the laser light generates a photovoltaic force in the depletion layer. However, since the PN junction 3 (P4) and the contact C4 are not in contact with each other, no current flows through the OBIC amplifier 10 connected between the terminal 8 and the back terminal 9.
[0025]
Similarly, the PN junction 3 (P1) to the PN junction 3 (P6) are irradiated with laser light in order.
However, since all of the contacts C1 to C6 are not in contact with any of the PN junction 3 (P1) to PN junction 3 (P6), the OBIC amplifier 10 connected between the terminal 8 and the back terminal 9 is connected to the OBIC amplifier 10. There is no current flow.
[0026]
Next, a case where the contact misalignment amount is detected will be described.
FIG. 4 is a configuration diagram (part 2) of the first specific example.
(A) is a top view, (b) is AA sectional drawing.
As shown in (a), the contact C4 is in contact with the PN junction 3 (P4). Therefore, the PN junction 3 (P4) is irradiated with laser light here (b). The laser beam is applied to the PN junction 3 (P4) through the active region 5. The PN junction 3 (P4) irradiated with the laser light generates a photovoltaic force in the depletion layer. Here, since the PN junction 3 (P4) and the contact C4 are in contact with each other, a current flows through the OBIC amplifier 10 connected between the terminal 8 and the back terminal 9.
[0027]
From the above measurement results, if the size of the PN junction 3 in the Y direction is A and the amount of deviation is L, the amount of deviation L is (Y0−A) / 2 <L <((Y0−A) / 2. ) + Y1.
That is, the laser beam is sequentially irradiated to the PN junction 3 (P1) to the PN junction 3 (P6), and a deviation is caused depending on whether or not a current flows through the OBIC amplifier 10 connected between the terminal 8 and the back terminal 9 at that time. The amount can be judged. The irradiation here can also sweep all of the PN junction 3 (P1) to PN junction 3 (P6) within a short time.
[0028]
In the above description, only the shift amount in the Y direction has been described, but the present invention is not limited to this example. That is, application in the XY2 direction is also possible.
The application will be described below.
FIG. 5 is a configuration diagram of an application example of the first specific example in the XY2 direction.
(A) represents the case where the contact misalignment amount is zero.
(B) represents a case where the contact misalignment amount is detected.
(A) The application example of the specific example 1 in the XY2 direction includes an X-direction shift detection pattern and a Y-direction shift detection pattern. Since the Y-direction shift detection pattern has already been described, only the X-direction shift detection pattern will be described.
[0029]
As an example of the contact arrangement position, when the contact misalignment amount is 0, that is, in (a), the contact c3 is x1 on the left side in the X direction from the center of the PN junction 3 (p3), and the contact c4 is the PN junction. It is arranged x1 away from the center of the part 3 (p3) on the right side in the X direction. The contact c2 is arranged x2 on the left side in the X direction from the center of the PN junction 3 (p2), and the contact c5 is arranged x2 away from the center of the PN junction 3 (p5) on the right side in the X direction. The contact c1 is arranged x3 on the left side in the X direction from the center of the PN junction 3 (p1), and the contact c6 is arranged x3 away from the center of the PN junction 3 (p6) on the right side in the X direction. Here, x1 is set to a minimum dimension at which the contact c3 and the contact c4 do not contact the PN junction 3 (p3) and the PN junction 3 (p4), respectively, and is set to x3>x2> x1.
[0030]
Next, when the contact misalignment amount is detected, that is, in (b), the contact c3 and the PN junction 3 (p3) are in contact with each other as shown in the figure. In this case, if the size of the PN junction 3 in the X direction is A, the contact misalignment amount L in the X direction can be easily set as (X1−A / 2) <L <(X2−A / 2). Can be requested.
[0031]
<Effect of specific example 1>
By adopting the configuration described above, the following effects are obtained.
1. The number of electrodes required for detecting the amount of deviation is only one on each side of the substrate, so that the input / output electrode pattern can be prevented from becoming complicated even if the measurement accuracy is increased.
2. In detecting the amount of deviation, only the active area is swept with laser light, and there is no need to measure each contact individually, so that the measurement is simple and the measurement time is shortened.
[0032]
<Specific example 2>
In Example 1, 4 (FIG. 1) was only one layer. Therefore, the setting of the contact 7 (FIG. 1) was set based on one screen in one process.
However, in specific example 2, it is assumed that the inter-layer insulating layer has a plurality of layers (two layers as an example). In such a case, a plurality of steps (two steps as an example) are set based on a plurality of (two steps as an example) screens. The details will be described below.
[0033]
FIG. 6 is a configuration diagram (part 1) of the second specific example.
(A) represents a plan view and (b) represents an AA cross-sectional view.
From FIG. 6, the contact misalignment measurement pattern of the specific example 2 includes a semiconductor substrate 1, an inter-element insulating layer 2, a PN junction portion 3, an active region 5, a first inter-stack insulating layer 21, By the second inter-layer insulating layer 22, the first wiring layer 23, the second wiring layer 24, the first contact 25, the second contact 26, the terminal 8, and the back terminal 9. Composed.
[0034]
The first inter-layer insulating layer 21 is an insulating film that is stacked on the PN junction 3 and transmits laser light. Usually, it is comprised by insulating films, such as a silicon single crystal laminated | stacked by CVD method etc.
The second inter-layer insulating layer 22 is an insulating film that is laminated on the first inter-layer insulating layer 21 or the first wiring layer 23 and transmits laser light. Usually, it is comprised by insulating films, such as a silicon single crystal laminated | stacked by CVD method etc.
[0035]
The first wiring layer 23 is a metal film laminated on the first inter-stack insulating layer 21 except for a predetermined portion on the PN junction 3, that is, the active region 5.
The second wiring layer 24 is a metal layered on a predetermined portion on the PN junction 3, that is, on the first inter-laminate insulating layer 21 and the second inter-laminate insulating layer 22 except for the active region 5. It is a film.
[0036]
The first contact 25 is a portion that penetrates the first inter-layer insulating layer 21 and makes the surface of the semiconductor substrate 1 and the first wiring layer 23 conductive. The arrangement positions of the plurality of contacts 25 will be described in detail later with reference to the drawings.
The second contact 26 is a portion that penetrates the first inter-stack insulating layer 21 and the second inter-stack insulating layer 22 and makes the surface of the semiconductor substrate 1 and the second wiring layer 24 conductive. The arrangement positions of the plurality of contacts 26 will be described in detail later with reference to the drawings.
Since other components are the same as those in the first specific example, the description is omitted.
[0037]
Next, the arrangement positions of the first contact 25 and the second contact 26 will be described in detail with reference to the drawings.
(A) represents the case where the contact misalignment amount is zero.
From (a), the PN junctions 3 (six examples P1 to P6 as an example) on the semiconductor substrate 1 are arranged on the semiconductor substrate 1 in a row at a predetermined interval in the X direction.
A multi-layered structure in which an inter-element insulating layer 2, a first inter-stack insulating layer 21, a second inter-stack insulating layer 22, and a second wiring layer 24 are stacked on the PN junction 3 on the semiconductor substrate 1. Single layer portions B1 and B2 in which the inter-element insulating layer 2, the first inter-stack insulating layer 21 and the first wiring layer 23 are stacked on the PN junction portion 3 are alternately stacked. Has been placed.
[0038]
In the multilayer portions D1 and D2, six contacts 26 from C1 to C6 are collectively set based on one screen. Accordingly, the positional arrangement between the six second contacts 26 from C1 to C6 is fixed, and the amount of misalignment of the contacts in the manufacturing process is such that all the six second contacts 26 as a whole in one direction. It will shift. Here, only the shift in the Y direction will be described.
[0039]
Similarly, in the single layer portions B1 and B2, six first contacts 25 from c1 to c6 are collectively set based on one screen. Accordingly, the arrangement positions of the six first contacts 25 from c1 to c6 are fixed, and the amount of misalignment of the contacts in the manufacturing process is such that all six first contacts 25 as a whole in one direction. It will shift. Here, only the shift in the Y direction will be described.
[0040]
As an example of contact arrangement positions on the multilayer portions D1 and D2, in (a), the second contact 26 (C3) and the second contact 26 (C4) are arranged apart from Y0 in the Y direction. The second contact 26 (C3), the second contact 26 (C2), the second contact 26 (C4), and the second contact 26 (C5) are arranged apart from each other in the Y direction by Y1. The second contact 26 (C2), the second contact 26 (C1), the second contact 26 (C5), and the second contact 26 (C6) are arranged apart from each other in the Y direction by Y2.
Y0 is set to the extent that neither the second contact 26 (C3) nor the second contact 26 (C4) is in contact with the PN junction 3 (P3) and the PN junction 3 (P4).
[0041]
The contacts on the single layer portions B1 and B2 are also arranged in the same manner as the arrangement positions on the multilayer portions D1 and D2. Return to (b) again. (B) represents the AA cross section of (a).
From (b), the first contact 25 and the second contact 26 are not in contact with the PN junction 3 (P4). Here, the PN junction 3 is irradiated with laser light (b). Laser light is applied to the PN junction 3 through the active region 5. The PN junction 3 irradiated with the laser light generates a photovoltaic force in the depletion layer. However, since the PN junction 3 (P4) is not in contact with the first contact 25 and the second contact 26, no current flows through the OBIC amplifier 10 connected between the terminal 8 and the back terminal 9.
[0042]
Similarly, the PN junction 3 (P1) to the PN junction 3 (P6) are irradiated with laser light in order.
However, since all of the contacts C1 to C6 are not in contact with any of the PN junction 3 (P1) to PN junction 3 (P6), the OBIC amplifier 10 connected between the terminal 8 and the back terminal 9 is connected to the OBIC amplifier 10. There is no current flow.
[0043]
Next, a case where the contact misalignment amount is detected will be described.
FIG. 7 is a configuration diagram (part 2) of the second specific example.
(A) is a top view, (b) is AA sectional drawing.
As shown to (a), the 1st contact c4 of the single layer part B2 is contacting the PN junction part 3 (P4). Therefore, the PN junction 3 (P4) is irradiated with laser light here (b). The laser beam is applied to the PN junction 3 (P4) through the active region 5. The PN junction 3 (P4) irradiated with the laser light generates a photovoltaic force in the depletion layer. Here, since the PN junction 3 (P4) and the contact C4 are in contact with each other, a current flows through the OBIC amplifier 10 connected between the terminal 8 and the back terminal 9.
[0044]
Similarly, as shown in (a), the second contact C4 of the multilayer part D2 is in contact with the PN junction part 3 (P4). Therefore, the PN junction 3 (P4) is irradiated with laser light here (b). The laser beam is applied to the PN junction 3 (P4) through the active region 5. The PN junction 3 (P4) irradiated with the laser light generates a photovoltaic force in the depletion layer. Here, since the PN junction 3 (P4) and the contact C4 are in contact with each other, a current flows through the OBIC amplifier 10 connected between the terminal 8 and the back terminal 9.
[0045]
From the above measurement results, when the size of the PN junction 3 is A, and the amount of deviation is L for both the first contact 25 and the second contact 26, the amount of deviation L is (Y0−A) / 2 <. L <((Y0−A) / 2) + Y1 is obtained. Here, the values of A, Y0, and Y1 are as shown in FIG.
That is, the laser beam is sequentially irradiated to the PN junction 3 (P1) to the PN junction 3 (P6), and a deviation is caused depending on whether or not a current flows through the OBIC amplifier 10 connected between the terminal 8 and the back terminal 9 at that time. The amount can be judged. The irradiation here can also sweep all of the PN junction 3 (P1) to PN junction 3 (P6) within a short time.
[0046]
In the above description, only the shift amount in the Y direction has been described, but the present invention is not limited to this example. That is, application in the XY2 direction is also possible.
The application will be described below.
FIG. 8 is a configuration diagram of an application example of the specific example 2 in the XY2 direction.
(A) represents the case where the contact misalignment amount is zero.
(B) represents a case where the contact misalignment amount is detected.
[0047]
(A) The application example of the specific example 2 in the XY2 direction includes an X-direction shift detection pattern and a Y-direction shift detection pattern. The black circle in the upper part of the figure is the multilayer part Y direction detection pattern, and the black circle in the lower part of the figure is the multilayer part X direction detection pattern. Similarly, the upper white circle in the figure is the single layer portion X direction detection pattern, and the lower white circle in the drawing is the single layer portion Y direction detection pattern.
Since the Y-direction shift detection pattern has already been described, only the X-direction shift detection pattern will be described. Only the upper white circle (single layer portion X direction detection pattern) in the figure will be described.
[0048]
As an example of the contact position arrangement, when the contact misalignment amount is 0, that is, in (a), the contact E3 is x1 on the left side in the X direction from the center of the PN junction 3 (P3), and the contact E4 is a PN junction. It is arranged x1 away from the center of the part 3 (P3) on the right side in the X direction. The contact E2 is arranged x2 on the left side in the X direction from the center of the PN junction 3 (P2), and the contact E5 is arranged x2 away from the center of the PN junction 3 (P5) on the right side in the X direction. The contact E1 is arranged x3 on the left side in the X direction from the center of the PN junction 3 (P1), and the contact E6 is arranged x3 away from the center of the PN junction 3 (P6) on the right side in the X direction. Here, x1 is set to a minimum dimension at which the contact E3 and the contact E4 do not contact the PN junction 3 (P3) and the PN junction 3 (P4), respectively, and is set to x3>x2> x1.
[0049]
Next, when the contact misalignment amount is detected, that is, in (b), the contact E3 and the PN junction 3 (P3) are in contact as shown in the drawing. In this case, if the size of the PN junction 3 in the X direction is A, the contact misalignment amount L in the X direction can be easily set as (X1−A / 2) <L <(X2−A / 2). Can be requested.
(A) Since the lower black dot (multilayer portion X direction detection pattern) in the figure can be detected in the same manner, the description is omitted.
[0050]
<Effect of specific example 2>
By adopting the configuration described above, the insulating layer between layers is a plurality of layers (two layers as an example), and is based on a plurality of (two steps as an example) screens in a plurality of steps (two steps as an example). Even when the contact is set, the same effect as in the first specific example can be obtained.
[Brief description of the drawings]
FIG. 1 is a configuration diagram (part 1) of a specific example 1;
FIG. 2 is a diagram for explaining the principle of a comparative example (part 1);
FIG. 3 is a diagram for explaining the principle of a comparative example (part 2);
4 is a configuration diagram (part 2) of the first specific example. FIG.
FIG. 5 is a configuration diagram of an application example of Example 1 in the XY directions.
FIG. 6 is a configuration diagram (part 1) of a specific example 2;
FIG. 7 is a configuration diagram (part 2) of the specific example 2;
FIG. 8 is a configuration diagram of an application example of the specific example 2 in the XY directions.
[Explanation of symbols]
1 Semiconductor substrate
2 Inter-element insulation layer
3 PN junction
4 Insulating layer between layers
5 Active area
6 Wiring layer
7 Contact
8 terminals
9 Back terminal
10 OBIC amplifier

Claims (4)

A plurality of PN junctions that are formed on the surface of the semiconductor substrate according to a predetermined rule and generate a recombination current upon irradiation with laser light;
An inter-layer insulating layer that is stacked on the PN junction and transmits laser light;
A wiring layer laminated on the inter-layer insulating layer except for a predetermined portion that transmits laser light on the PN junction; and
A plurality of contacts that pass through the insulating layer between the layers and connect the surface of the semiconductor substrate and the wiring layer;
The arrangement of the plurality of contacts on the semiconductor substrate may be any one of the plurality of PN junctions and any of the plurality of contacts when a contact misalignment amount of a predetermined amount or more occurs. The contact misalignment measurement, wherein the contact misalignment amount is arranged such that the specific combination of the conducting PN junction and the contact differs depending on the amount of misalignment of the contact. pattern. The contact misalignment measurement pattern according to claim 1, wherein the plurality of contacts are arranged on the semiconductor substrate.
Any of the plurality of PN junctions and any of the plurality of contacts are arranged to be conductive when a contact misalignment amount of the predetermined amount or more occurs in the X axis direction, and the Y axis direction When the contact misalignment amount of the predetermined amount or more is generated, any one of the plurality of PN junctions and one of the plurality of contacts are arranged to conduct, and this conducting PN junction The contact misalignment amount measurement pattern is characterized in that a specific combination of a contact and a contact is arranged so as to differ depending on the amount of misalignment of the contact in each of the Y-axis direction and the X-axis direction. A plurality of PN junctions that are formed on the surface of the semiconductor substrate according to a predetermined rule and generate a recombination current upon irradiation with laser light;
A first inter-layer insulating layer that transmits a laser beam stacked on the PN junction; and
A first wiring layer stacked on the first inter-layer insulating layer except for a predetermined portion that transmits laser light on the PN junction; and
A second inter-laminate insulating layer that transmits laser light that is laminated on the first wiring layer; and
A second wiring layer stacked on the second inter-layer insulating layer except for a predetermined portion that transmits laser light on the PN junction; and
A plurality of first contacts that connect the surface of the first semiconductor substrate and the wiring layer through the first inter-layer insulating layer;
A plurality of second contacts that pass through the first interlayer insulating layer and the second interlayer insulating layer and connect the surface of the first semiconductor substrate and the second wiring layer; Prepared,
The arrangement of the plurality of first contacts or second contacts on the semiconductor substrate may be any of the plurality of PN junctions when a contact misalignment amount of a predetermined amount or more occurs. Any one of the plurality of contacts is arranged to conduct, and a specific combination of the conducting PN junction and the contact is arranged to be different depending on the amount of misalignment of the contacts. Pattern for measuring the amount of misalignment of the contact. In the contact misalignment measurement pattern according to claim 3,
Any of the plurality of PN junctions and any of the plurality of first contacts or second contacts when a contact misalignment amount of the predetermined amount or more occurs in the X-axis direction. When the contact misalignment amount of the predetermined amount or more is generated in the Y-axis direction, the plurality of PN junction portions and the plurality of first contacts or first contacts One of the two contacts is arranged to conduct, and a specific combination of the conducting PN junction and the first contact or the second contact is provided for each of the Y-axis direction and the X-axis direction. The contact misalignment amount measurement pattern is characterized in that the contact misalignment amount is arranged differently depending on the contact misalignment amount.

Images