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JP4366647B2 - Wiring member manufacturing method - Google Patents
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JP4366647B2 - Wiring member manufacturing method - Google Patents

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JP4366647B2
JP4366647B2 JP2003420889A JP2003420889A JP4366647B2 JP 4366647 B2 JP4366647 B2 JP 4366647B2 JP 2003420889 A JP2003420889 A JP 2003420889A JP 2003420889 A JP2003420889 A JP 2003420889A JP 4366647 B2 JP4366647 B2 JP 4366647B2
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metal layer
conductive
wiring member
conductive protrusion
protrusion
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JP2005183590A (en
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修 嶋田
和久 鈴木
良次 川崎
滿男 菊地
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Resonac Corp
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Hitachi Chemical Co Ltd
Showa Denko Materials Co Ltd
Resonac Corp
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Description

本発明は、配線部材およびその製造方法と、それら配線部材を用いた配線板及び半導体パッケージ用基板に関する。   The present invention relates to a wiring member, a manufacturing method thereof, a wiring board using the wiring member, and a semiconductor package substrate.

近年の電子部品の高密度実装化に伴い、配線板の配線密度の向上が求められるようになってきている。また、配線板に搭載する半導体パッケージにおいても同様の要求が高まっている。一般に半導体パッケージの場合、入出力端子をパッケージの周辺に一列配置するタイプと、周辺だけでなく内部まで多列に配置するタイプがある。前者は、QFP(Quad Flat Package)が代表的である。これを多端子化する場合は、端子ピッチを縮小することが必要であるが、0.5mmピッチ以下の領域では、配線板との接続に高度な技術が必要になる。後者のアレイタイプは比較的大きなピッチで端子配列が可能なため、多ピン化に適している。従来、アレイタイプは接続ピンを有するPGA(Pin Grid Array)が一般的であるが、配線板との接続は挿入型となり、表面実装には適していない。このため、表面実装可能なBGA(Ball Grid Array)と称するパッケージが開発されている。   With recent high-density mounting of electronic components, improvement in wiring density of wiring boards has been demanded. Similar demands are also increasing in semiconductor packages mounted on wiring boards. In general, in the case of a semiconductor package, there are a type in which input / output terminals are arranged in a row around the package and a type in which the input / output terminals are arranged in multiple rows not only around but also inside. The former is typically QFP (Quad Flat Package). In order to increase the number of terminals, it is necessary to reduce the terminal pitch. However, in a region having a pitch of 0.5 mm or less, advanced technology is required for connection to the wiring board. The latter array type is suitable for increasing the number of pins because terminals can be arranged with a relatively large pitch. Conventionally, an array type is generally a PGA (Pin Grid Array) having connection pins, but connection with a wiring board is an insertion type and is not suitable for surface mounting. Therefore, a package called BGA (Ball Grid Array) that can be mounted on the surface has been developed.

一方、電子機器の小型化に伴って、パッケージサイズの更なる小型化の要求が強くなってきた。この小型化に対応するものとして、半導体チップとほぼ同等サイズの、いわゆるチップサイズパッケージ(CSP;Chip Size Package)が提案されている。これは、半導体チップの周辺部でなく、実装領域内に外部配線基板との接続部即ち外部接続端子を有するパッケージである。具体例としては、バンプ付きポリイミドフィルムを半導体チップの表面に接着し、チップと金リード線により電気的接続を図った後、エポキシ樹脂などをポッティングして封止したもの(例えば非特許文献1参照)や、仮基板上に半導体チップ及び外部配線基板との接続部に相当する位置に金属バンプを形成し、半導体チップをフェースダウンボンディング後、仮基板上でトランスファーモールドしたもの(例えば非特許文献2参照)などがある。   On the other hand, with the downsizing of electronic devices, the demand for further downsizing of the package size has increased. In order to cope with this downsizing, a so-called chip size package (CSP) having a size substantially equal to that of a semiconductor chip has been proposed. This is a package having a connection portion with an external wiring board, that is, an external connection terminal in the mounting region, not in the peripheral portion of the semiconductor chip. As a specific example, a polyimide film with bumps is bonded to the surface of a semiconductor chip, an electrical connection is made between the chip and a gold lead wire, and then epoxy resin or the like is potted and sealed (for example, see Non-Patent Document 1) ), Or metal bumps are formed on the temporary substrate at positions corresponding to the connection portions between the semiconductor chip and the external wiring substrate, the semiconductor chip is face-down bonded, and then transfer molded on the temporary substrate (for example, Non-Patent Document 2). See).

これらの半導体パッケージは、何れも、接続端子と半導体チップとの接続のために、パッケージ用基板に形成する回路と接続端子間の接続のために、パッケージ用基板に形成する回路と接続端子間の接続のために、スルーホール、バイアホールを用いている。スルーホール、バイアホールは基材の接続端子となる箇所に予めドリルやレーザなどで穴を設け、はんだや導電ペーストを充填または、スルーホールめっき、穴埋めめっきをして接続端子を設ける方法が一般的であるが、この方法では穴の小径化に限界があり、多ピン化になるほどコスト高となる。   In any of these semiconductor packages, the connection between the circuit formed on the package substrate and the connection terminal for connection between the circuit formed on the package substrate and the connection terminal for connection between the connection terminal and the semiconductor chip. Through holes and via holes are used for connection. For through-holes and via-holes, a method is generally used in which a connection terminal is provided by drilling or lasering in advance at the location to be the connection terminal of the base material, filling with solder or conductive paste, or through-hole plating or hole-filling plating However, this method has a limit in reducing the diameter of the hole, and the cost increases as the number of pins increases.

そこで、予め金属箔上に導電性突起をめっき法または印刷法またはエッチング法によって設けておき、後から基材となる樹脂を埋め込んだのち又は同時に、金属箔又は配線部材を接続する方法が提案されている。これらの工法において接続信頼性を向上するために導電性突起頭部に導電性樹脂や金めっき、はんだめっき等を施す方法も提案されている。   Therefore, a method has been proposed in which conductive protrusions are provided on a metal foil in advance by a plating method, a printing method, or an etching method, and after the resin as a base material is embedded later or simultaneously, the metal foil or the wiring member is connected. ing. In order to improve the connection reliability in these methods, a method of applying a conductive resin, gold plating, solder plating or the like to the conductive protrusion head has been proposed.

また、これまで、発明者らは金属箔をエッチングして形成した導電性突起を有した配線部材を用いて、導電性突起(バンプ)を樹脂で埋め込み、層間接続用の配線に利用した半導体パッケージを開発した。この半導体パッケージについては、例えば特許文献1に記載されている。
特開2002−43467号公報 NIKKEI MATERIALS & TECHNOLOGY 94.4,No.140,p18−19 Smallest Flip−Chip−Like Package CSP;The Second VLSI Packaging Workshop of Japan,p46−50,1994
In the past, the inventors have used a wiring member having conductive protrusions formed by etching a metal foil, embedded conductive protrusions (bumps) with resin, and used for wiring for interlayer connection. Developed. This semiconductor package is described in Patent Document 1, for example.
JP 2002-43467 A NIKKEI MATERIALS & TECHNOLOGY 94.4, No. 140, p18-19 Smallest Flip-Chip-Like Package CSP; The Second VLSI Packaging Workshop of Japan, p46-50, 1994

これらの導電性突起を有した配線部材は多くの場合、部材の厚みは、5〜100μmと薄く、そのままでは、取り扱いしにくく破損しやすい問題があった。また導電性突起を有した配線部材を用いた配線基板、パッケージ用基板も同様に薄く強度的に弱いという問題があった。   In many cases, the wiring members having these conductive protrusions have a thickness of 5 to 100 μm, and as such, there is a problem that they are difficult to handle and easily damaged. In addition, the wiring board using the wiring member having the conductive projection and the package board are similarly thin and weak in strength.

また、配線基板およびパッケージ用基板において、位置決め穴およびスリット穴等、貫通穴を必要とすることが多い。これらの穴の形成はドリル、ルータ等の切削工具により配線形成完了後に加工されることが多い。これらの穴を後加工する場合、配線加工された基板は加工プロセスの熱履歴、加工応力により収縮膨張しているため、配線位置と加工位置が必ずしも一致しないという問題があった。また、ドリルやルータで加工した場合、穴形状は角部に大きなアール(半円形)が付くため形状が制約される。   In addition, wiring boards and package substrates often require through holes such as positioning holes and slit holes. These holes are often formed after the wiring formation is completed by a cutting tool such as a drill or a router. When these holes are post-processed, the wiring-processed substrate contracts and expands due to the thermal history and processing stress of the processing process, so that there is a problem that the wiring position does not necessarily match the processing position. Further, when machining with a drill or a router, the shape of the hole is restricted because a large round (semicircle) is attached to the corner.

本発明は、予め金属箔上に導電性突起を形成し、後から基材となる樹脂を埋め込む配線部材を用いて配線板およびパッケージ用基板を製造するにあたり、製品強度が向上し、さらに穴加工が容易な配線部材、配線板、パッケージ用基板、および配線部材の製造方法を提供することを目的とする。   The present invention improves the strength of the product when manufacturing a wiring board and a package substrate by using a wiring member in which conductive protrusions are formed in advance on a metal foil and a resin as a base material is embedded later. An object of the present invention is to provide a wiring member, a wiring board, a package substrate, and a method for manufacturing the wiring member that are easy to manufacture.

本発明は、以下に記載の各事項に関する。
(1)金属層表面に複数の導電性突起を形成する配線部材の製造方法において、第1の金属層、第2の金属層および第3の金属層の少なくとも3層をこの順で有する多層金属箔を準備する工程、導電性突起となる部分を残して第2または第3の金属層が露出するまで金属層を除去し導電性突起を形成する工程、導電性突起を埋込む絶縁樹脂が必要な部分の外周に沿い金属層表面にダムを形成する工程を含む配線部材の製造方法。
)ダムを形成する工程が、ダムとなる部分を残して第2または第3の金属層が露出するまで金属層を除去しダムを形成する工程である()に記載された配線部材の製造方法。
)導電性突起を形成する工程が、金属層表面に接する面が凹凸形状である導電性突起を形成する工程である(1)または(2)に記載された配線部材の製造方法。
)ダムを形成する工程が、金属層表面に接する面が凹凸形状であるダムを形成する工程である()〜()いずれかに記載された配線部材の製造方法。
)導電性突起となる部分を残して第2または第3の金属層が露出するまで金属層を除去し導電性突起を形成する工程の前に、導電性突起が形成される金属層表面の反対面に補強用のテープを貼り付ける工程を含む()〜()いずれかに記載された配線部材の製造方法。
)導電性突起となる部分を残して第2または第3の金属層が露出するまで金属層を除去し導電性突起を形成する工程の前に、導電性突起が形成される金属層表面の反対面に補強用の樹脂を塗布する工程を含む()〜()いずれかに記載された配線部材の製造方法。
)導電性突起となる部分を残して第2または第3の金属層が露出するまで金属層を除去し導電性突起を形成する工程後、導電性突起を絶縁樹脂で埋込む工程、前記絶縁樹脂を硬化する工程、一部の導電性突起の保持層にあたる第2または第3の金属層を除去する工程、保持層にあたる第2または第3の金属層を除去した導電性突起を除去する工程を含む()〜()いずれかに記載された配線部材の製造方法。
)導電性突起を除去する工程が、エッチングにより導電性突起を除去する工程である()に記載された配線部材の製造方法。
)導電性突起を除去する工程が、絶縁樹脂から露出した導電性突起の片面に力を加え導電性突起を押し出すことにより導電性突起を除去する工程である()に記載された配線部材の製造方法。

The present invention relates to each item described below.
(1) In the manufacturing method of a wiring member for forming a plurality of conductive protrusions to metals layer surface, the first metal layer, a multilayer having in this order at least three layers of the second metal layer and the third metal layer A step of preparing the metal foil, a step of removing the metal layer to leave the portion to be the conductive protrusion and exposing the second or third metal layer to form the conductive protrusion, and an insulating resin for embedding the conductive protrusion. The manufacturing method of the wiring member including the process of forming a dam in the metal layer surface along the outer periphery of a required part.
( 2 ) The wiring member described in ( 1 ), wherein the step of forming the dam is a step of removing the metal layer and forming the dam until the second or third metal layer is exposed, leaving a portion that becomes the dam. Manufacturing method.
( 3 ) The method for manufacturing a wiring member according to (1) or (2) , wherein the step of forming the conductive protrusion is a step of forming the conductive protrusion whose surface in contact with the metal layer surface is uneven.
( 4 ) The method for manufacturing a wiring member according to any one of ( 1 ) to ( 3 ), wherein the step of forming a dam is a step of forming a dam in which a surface in contact with the metal layer surface has an uneven shape.
( 5 ) The surface of the metal layer on which the conductive protrusions are formed before the step of removing the metal layer and forming the conductive protrusions until the second or third metal layer is exposed, leaving the portions that become the conductive protrusions. The manufacturing method of the wiring member described in any one of ( 1 )-( 4 ) including the process of sticking the tape for reinforcement on the opposite surface.
( 6 ) The surface of the metal layer on which the conductive protrusions are formed before the step of removing the metal layer and forming the conductive protrusions until the second or third metal layer is exposed, leaving the portions that become the conductive protrusions. The manufacturing method of the wiring member described in any one of ( 1 )-( 4 ) including the process of apply | coating the resin for reinforcement to the opposite surface.
( 7 ) After the step of removing the metal layer and forming the conductive protrusion until the second or third metal layer is exposed leaving the portion to be the conductive protrusion, the step of embedding the conductive protrusion with an insulating resin, A step of curing the insulating resin, a step of removing the second or third metal layer corresponding to the holding layer of a part of the conductive protrusions, and a removal of the conductive protrusions after removing the second or third metal layer corresponding to the holding layer. The manufacturing method of the wiring member described in any one of ( 1 )-( 6 ) including a process.
( 8 ) The method for manufacturing a wiring member according to ( 7 ), wherein the step of removing the conductive protrusion is a step of removing the conductive protrusion by etching.
( 9 ) The wiring according to ( 7 ), wherein the step of removing the conductive protrusion is a step of removing the conductive protrusion by applying a force to one surface of the conductive protrusion exposed from the insulating resin to push out the conductive protrusion. Manufacturing method of member.

本発明によって、予め金属箔上に導電性突起を形成し、後から基材となる樹脂を埋め込む配線部材を用いることにより、配線板および半導体パッケージ用基板を製造するにあたり、作業性が向上する。また、製品強度の向上もでき、さらに穴加工が容易にできるようになる。本発明は、ドリルやレーザなどで穴あけし、はんだ、導電ペースト、スルーホールめっき、穴埋めめっきなどを行わないので、より小径化でき、コストを低く抑えることができ、また、位置決め穴およびスリット穴等、貫通穴を配線形成完了後に加工しないので、配線位置と加工位置が必ずしも一致しないという問題を解決できる。   According to the present invention, by using a wiring member in which conductive protrusions are formed in advance on a metal foil and a resin serving as a base material is embedded later, workability is improved in manufacturing a wiring board and a semiconductor package substrate. Further, the strength of the product can be improved, and further drilling can be facilitated. The present invention does not perform drilling with a drill or laser, and does not perform solder, conductive paste, through-hole plating, hole-filling plating, etc., so that the diameter can be further reduced, cost can be kept low, and positioning holes, slit holes, etc. Since the through hole is not processed after the wiring formation is completed, the problem that the wiring position does not necessarily match the processing position can be solved.

本発明で製造される、金属箔上に導電性突起を形成し、後から基材となる絶縁樹脂を埋め込む配線部材を用いた配線板としては、例えば、半導体パッケージに用いられるインターポーザーとしての半導体パッケージ用基板、半導体パッケージやその他の電子部品を搭載するマザーボード等のその他配線板が挙げられる。   For example, a semiconductor as an interposer used in a semiconductor package may be used as a wiring board using a wiring member manufactured by the present invention, in which conductive protrusions are formed on a metal foil and an insulating resin to be a base material is embedded later. Other wiring boards such as a motherboard for mounting a package substrate, a semiconductor package and other electronic components can be mentioned.

本発明は、金属箔と、金属箔表面に形成された複数の導電性突起と、複数の導電性突起を埋込む絶縁樹脂と、前記絶縁樹脂の必要な部分の外周に沿い金属箔表面に設けられたダムからなる配線部材である。本発明の導電性突起が形成された金属箔としては、配線板に一般的に使用される金属箔であれば、特に限定しないが、経済性、加工性の点から銅箔が望ましい。また、金属箔表面に形成される導電性突起としては、金属体又は、導電性ペーストなどが挙げられる。金属体であれば、めっきレジスト形成後、銅めっき、ニッケルめっき、錫めっき、はんだめっきなどで金属箔表面に形成可能であり、また導電性ペーストであれば、印刷、ディスペンス等などで、金属箔表面に形成することができる。また、導電性突起である金属体をエッチングにより形成することも可能であり、その場合、銅箔単体を用いてもよいが、第1、第3の金属層が第2の金属層とエッチング条件の異なる金属層である3層の金属箔を用いることが好ましい。このときの第1、3の金属層が銅、銅合金の場合には、第2の金属層としては、ニッケル、ニッケル合金、チタン、クロム、錫、亜鉛等がよい。   The present invention provides a metal foil, a plurality of conductive protrusions formed on the surface of the metal foil, an insulating resin embedding the plurality of conductive protrusions, and provided on the surface of the metal foil along an outer periphery of a necessary portion of the insulating resin. This is a wiring member made of a dam. The metal foil on which the conductive protrusions of the present invention are formed is not particularly limited as long as it is a metal foil generally used for a wiring board, but a copper foil is desirable from the viewpoint of economy and workability. Examples of the conductive protrusion formed on the surface of the metal foil include a metal body or a conductive paste. If it is a metal body, it can be formed on the surface of the metal foil by copper plating, nickel plating, tin plating, solder plating, etc. after the plating resist is formed. It can be formed on the surface. It is also possible to form a metal body which is a conductive protrusion by etching. In this case, a copper foil alone may be used, but the first and third metal layers are etched together with the second metal layer. It is preferable to use a three-layer metal foil which is a metal layer having a different thickness. When the first and third metal layers at this time are copper or a copper alloy, nickel, nickel alloy, titanium, chromium, tin, zinc, or the like is preferable as the second metal layer.

本発明で使用する絶縁樹脂としては、導電性突起に埋め込む際、流動性がある樹脂であればよい。このとき、塗布環境は常温でも樹脂に流動性が得られる様に加熱してもよい。また、常温での形態がシート状で、導電性突起上に戴置し加熱、加圧等によって導電性突起を埋め込むような樹脂でもよい。使用する絶縁樹脂の例としては、ポリイミド樹脂、ポリアミドイミド樹脂、シリコーン樹脂、フェノール樹脂、ビスマレイミドトリアジン樹脂、エポキシ樹脂、アクリル樹脂等の熱硬化性樹脂、ポリフェニレンサルファイド樹脂、感光性ポリイミド樹脂、アクリルエポキシ樹脂、エチレン、プロピレン、スチレン、ブタジエン等の熱可塑性エラストマー、液晶ポリマー等がある。また、これらの樹脂に有機粒子や無機粒子を配合したものも使用することができる。樹脂に配合することができる有機粒子の例としては、前述の樹脂の硬化物、無機粒子の例としてはアルミナ粒子、二酸化ケイ素(シリカ)、ガラス繊維等がある。これらの有機又は無機粒子の粒径は、平均粒径が0.1〜20μmであることが好ましい。   The insulating resin used in the present invention may be any resin that has fluidity when embedded in the conductive protrusions. At this time, the application environment may be heated so that fluidity is obtained in the resin even at room temperature. Alternatively, a resin that is in the form of a sheet at normal temperature and is placed on the conductive protrusion and embedded with the conductive protrusion by heating, pressurizing, or the like may be used. Examples of insulating resins used include polyimide resins, polyamideimide resins, silicone resins, phenol resins, bismaleimide triazine resins, epoxy resins, acrylic resins and other thermosetting resins, polyphenylene sulfide resins, photosensitive polyimide resins, acrylic epoxies. Examples thereof include resins, thermoplastic elastomers such as ethylene, propylene, styrene, and butadiene, and liquid crystal polymers. Moreover, what mix | blended organic particle | grains and inorganic particle | grains with these resin can also be used. Examples of organic particles that can be blended into the resin include cured products of the aforementioned resins, and examples of inorganic particles include alumina particles, silicon dioxide (silica), glass fibers, and the like. These organic or inorganic particles preferably have an average particle size of 0.1 to 20 μm.

本発明において、硬化前の流動状のワニス状態にある絶縁樹脂を、配線部材の導電性突起を有する表面に、導電性突起が絶縁樹脂で埋め込まれる厚みに、印刷により塗布する場合、流動状のワニス状態にある絶縁樹脂は、印刷時に粘度が3〜70Pa・sであることが好ましい。印刷方法としては、メッシュスクリーンマスク、メタルマスク等を用いたスクリーン印刷法、及び配線部材上に直接スキージ、ブレード等を用いて、すり切り又は隙間を空けて均一な厚みに樹脂を塗布する方法、及び樹脂をドラム又はボード等に塗布した後、配線部材上に樹脂を転写する方法等がある。また、これら作業を真空下で行なう方法も、未充填箇所をなくすには有効である。   In the present invention, when the insulating resin in a fluid varnish state before curing is applied to the surface of the wiring member having the conductive protrusions to a thickness where the conductive protrusions are embedded with the insulating resin by printing, The insulating resin in the varnish state preferably has a viscosity of 3 to 70 Pa · s during printing. As a printing method, a screen printing method using a mesh screen mask, a metal mask, etc., and a method of applying a resin to a uniform thickness by using a squeegee, a blade, etc. directly on a wiring member, leaving a gap or a gap, and There is a method of transferring a resin onto a wiring member after applying the resin to a drum or a board. Moreover, the method of performing these operations under vacuum is also effective in eliminating unfilled portions.

またこれら絶縁樹脂を複数使用してもよい。たとえば1層目の絶縁樹脂として導電性突起および金属箔表面に接着のよい絶縁樹脂を薄く供給し、その上に強度的に優れた絶縁樹脂を埋め込んだ構造、たとえば基材の反りを低減するために1層目の絶縁樹脂として接着のよい絶縁樹脂を薄く形成し、2層目の絶縁樹脂として基材と膨張率の近い絶縁樹脂を厚く形成し、3層目の絶縁樹脂として反りを調整するための適度に調整した絶縁樹脂を埋め込んだ構造でもよい。   A plurality of these insulating resins may be used. For example, in order to reduce warping of the base material, for example, a structure in which an insulating resin having good adhesion is supplied thinly on the surface of the conductive protrusion and the metal foil as the first layer insulating resin, and an insulating resin excellent in strength is embedded thereon. A thin insulating resin having good adhesion is formed as the first insulating resin, a thick insulating resin having a coefficient of expansion close to that of the base material is formed as the second insulating resin, and the warp is adjusted as the third insulating resin. Therefore, a structure in which an appropriately adjusted insulating resin is embedded may be used.

予め金属箔上に導電性突起を形成し、後から基材となる絶縁樹脂を埋め込む配線部材を用いて配線板およびパッケージ用基板を製造するにあたり、本発明は作業性を向上させる構造として、配線部材の絶縁樹脂の必要な部分にのみ絶縁樹脂を埋め込めるように、必要な部分以外に絶縁樹脂が流れ込まないように、絶縁樹脂の必要な部分の外周にダムを設けた構造が有効である。一般的に配線板の製造において配線部材の端部は製造に必要な位置決めマーカ等があるのみで最終的には切り取られ実際の製品にはならない。そこで実際の製品になるところのみ絶縁樹脂を供給すれば製品としての機能を満たし、使用する絶縁樹脂を減らすことができる。例えば図6のパネル6を配線部材とすると実際の製品となる部分はフレーム部7になる。フレーム部7にのみ絶縁樹脂を供給すればよい。また、実際の製品にならない部分の配線部材端部全面にダム構造を形成し周辺部を厚くすれば、配線部材の強度を上げることができる。とくに金属箔表面に複数の導電性突起を有する配線部材として、第1の金属層、第2の金属層および第3の金属層の少なくとも3層をこの順で有する多層金属箔の第1の金属層を、導電性突起となる部分を残して第2または第3の金属層が露出するまで除去する方法で形成した配線部材においては、導電性突起を形成する際に、同時にダムとなる部分をエッチングしないで第1の金属層、第2の金属層を残すことでダム形状を容易に形成することができる。この場合、金属箔表面に複数の導電性突起を有する配線部材としては、例えば、下記のものが挙げられる。第1、第3の金属層が第2の金属層とエッチング条件の異なる金属層である3層の金属箔を、ドライフィルムレジストを用いたエッチングにより第1の金属層を柱状バンプ(導電性突起)とした金属箔、及び、上記の3層の金属箔を、ドライフィルムレジストを用いたエッチングにより第1の金属層を柱状バンプとし、次いで第2の金属層を、柱状バンプの下部を除いて第3の金属層が露出するまでエッチング除去した金属箔がある。このときの第1、3の金属層が銅、銅合金の場合には、第2の金属層としては、ニッケル、ニッケル合金、チタン、クロム、錫、亜鉛等がある。また、図6のフレーム部7の中に導電性突起を形成しフレーム部7の周囲をダムとするとパネル6のフレーム部以外の部分をダムとすることができる。なお、第1の金属層、第2の金属層および第3の金属層の少なくとも3層をこの順で有する多層金属箔の第1の金属層を、導電性突起とダムとなる部分を残して、第2または第3の金属層が露出するまで除去する配線部材の製造方法おいて、第2の金属層および第3の金属層は、エッチングで除去すればよく、通常の配線板の製造工程で使用されるエッチング液などでよい。   In manufacturing a wiring board and a package substrate using a wiring member in which conductive protrusions are formed in advance on a metal foil and an insulating resin as a base material is embedded later, the present invention provides a wiring as a structure for improving workability. A structure in which a dam is provided on the outer periphery of the necessary portion of the insulating resin is effective so that the insulating resin can be buried only in the necessary portion of the insulating resin of the member so that the insulating resin does not flow into other than the necessary portion. In general, in the manufacture of a wiring board, the end of the wiring member has only a positioning marker or the like necessary for manufacturing, and is finally cut off to become an actual product. Therefore, if the insulating resin is supplied only to the actual product, the function as the product can be satisfied and the insulating resin to be used can be reduced. For example, if the panel 6 in FIG. 6 is a wiring member, the part that becomes the actual product is the frame part 7. It is only necessary to supply the insulating resin only to the frame portion 7. Further, if a dam structure is formed on the entire surface of the end portion of the wiring member that is not an actual product and the peripheral portion is thickened, the strength of the wiring member can be increased. In particular, as a wiring member having a plurality of conductive protrusions on the surface of the metal foil, the first metal of the multilayer metal foil having at least three layers of the first metal layer, the second metal layer, and the third metal layer in this order. In the wiring member formed by removing the layer until the second or third metal layer is exposed, leaving the portion that becomes the conductive protrusion, when forming the conductive protrusion, the portion that becomes the dam at the same time is formed. A dam shape can be easily formed by leaving the first metal layer and the second metal layer without etching. In this case, examples of the wiring member having a plurality of conductive protrusions on the surface of the metal foil include the following. The first and third metal layers are three-layer metal foils having different etching conditions from the second metal layer, and the first metal layer is formed into columnar bumps (conductive protrusions) by etching using a dry film resist. ) And the above-mentioned three-layer metal foil are etched using a dry film resist to make the first metal layer a columnar bump, and then the second metal layer is removed except for the lower part of the columnar bump. There is a metal foil that is etched away until the third metal layer is exposed. When the first and third metal layers at this time are copper or a copper alloy, examples of the second metal layer include nickel, a nickel alloy, titanium, chromium, tin, and zinc. Further, if conductive projections are formed in the frame portion 7 of FIG. 6 and the periphery of the frame portion 7 is a dam, the portion other than the frame portion of the panel 6 can be a dam. The first metal layer of the multi-layer metal foil having at least three layers of the first metal layer, the second metal layer, and the third metal layer in this order is left with the portions that become conductive protrusions and dams. In the method for manufacturing a wiring member that is removed until the second or third metal layer is exposed, the second metal layer and the third metal layer may be removed by etching, and a normal wiring board manufacturing process Etching solution used in (1) may be used.

また、ダムを設けることで、流動性の高い絶縁樹脂を使う場合、絶縁樹脂のダレが少なくなり厚みが安定する。特に印刷で絶縁樹脂を埋め込む場合、配線部材とマスクの隙間、スキージとの隙間を一定にし易いので有効である。   In addition, by providing a dam, when an insulating resin with high fluidity is used, sagging of the insulating resin is reduced and the thickness is stabilized. In particular, when the insulating resin is embedded by printing, it is effective because the gap between the wiring member and the mask and the gap between the squeegees can be easily made constant.

実際の製品にならない部分の配線部材端部全面にダム構造を形成した場合、配線部材と樹脂との膨張係数差や硬化収縮量の差から反り歪みが発生しやすくなる場合がある。この場合ダムに当たる部分に部分的にスリットや穴など空間形成し応力の逃げをつくることも有効である。このスリットや穴は貫通していても止まり穴でもよい。この空間に絶縁樹脂を埋め込んでもよい。   When a dam structure is formed on the entire end surface of the wiring member that is not an actual product, warp distortion may easily occur due to a difference in expansion coefficient between the wiring member and the resin or a difference in the amount of curing shrinkage. In this case, it is also effective to create a stress relief by forming a space such as a slit or a hole in the part that hits the dam. The slit or hole may be a through hole or a blind hole. An insulating resin may be embedded in this space.

金属箔表面に複数の導電性突起を有する配線部材として、第1の金属層、第2の金属層および第3の金属層の少なくとも3層をこの順で有する多層金属箔の第1の金属層を、導電性突起となる部分を残して第2または第3の金属層が露出するまで除去する方法で形成した配線部材においては、ダム形成時に同時に第1の金属層のダム形成部分に、上記のスリット、穴に当たる部分を選択的にエッチングすることで容易に形成することができる。またこれらの穴をその後の加工用の位置決め穴としてもよい。   As a wiring member having a plurality of conductive protrusions on the surface of the metal foil, the first metal layer of the multilayer metal foil having at least three layers of the first metal layer, the second metal layer, and the third metal layer in this order. In the wiring member formed by removing the second metal layer until the second or third metal layer is exposed leaving a portion that becomes a conductive protrusion, the dam forming portion of the first metal layer is simultaneously formed at the time of dam formation. It can be easily formed by selectively etching the portion corresponding to the slit and hole. These holes may be used as positioning holes for subsequent processing.

薄い金属箔に導電性突起を形成した配線部材において、ダムを設けることでダム周辺の薄い金属箔に応力が集中しやすく、製造工程の取り扱いにより薄い金属箔がダムとの境目で破損しやすい傾向がある。そこで配線部材のダム形状において、金属箔表面に接する面が直線形状でなく、凹凸形状にすることで絶縁樹脂との接着面積を大きくし、また直線部分を減らすことで、破損しにくくすることは重要である。接着面積を増やすことは密着強化につながり、直線部分を減らすことで一部破損してもその破損部分から先に破壊が伝播しにくい。この凹凸構造の形状の例を図1(a)〜(d)に示した。図1(a)〜(d)は、金属箔表面に接する面のダム形状を配線部材の上面から見たものである。   In a wiring member with conductive protrusions formed on a thin metal foil, stress is likely to concentrate on the thin metal foil around the dam by providing a dam, and the thin metal foil tends to break at the boundary with the dam due to the handling of the manufacturing process. There is. Therefore, in the dam shape of the wiring member, the surface in contact with the metal foil surface is not a straight shape, but by making it an uneven shape, the adhesion area with the insulating resin is increased, and by reducing the straight part, it is difficult to break is important. Increasing the adhesion area leads to adhesion strengthening, and even if the straight part is reduced, even if it is partially broken, the breakage hardly propagates from the damaged part first. The example of the shape of this uneven structure was shown to Fig.1 (a)-(d). 1A to 1D show the dam shape of the surface in contact with the metal foil surface as viewed from the upper surface of the wiring member.

図1(a)に示すような凹凸形状、図1(b)に示すような三角形を利用した凹凸形状、図1(c)は、より接触面積をおおきくするために鍵穴のような凹凸形状、図1(d)はL型に曲げた突起の凹凸形状等より絶縁樹脂とダム側面との接着面積をおおきくかつ亀裂等の破損が伝播しにくい構造である。図2にエッチングにより導電性突起を形成した配線部材、その半導体パッケージ用基板のフレームとなる部分を上面から見た平面図を示した。周りの凹凸部分がダム1になっている。   An uneven shape as shown in FIG. 1 (a), an uneven shape using a triangle as shown in FIG. 1 (b), FIG. 1 (c) shows an uneven shape such as a keyhole to further increase the contact area, FIG. 1D shows a structure in which the adhesion area between the insulating resin and the dam side surface is large and the damage such as a crack is difficult to propagate due to the uneven shape of the protrusion bent into the L shape. FIG. 2 shows a plan view of a wiring member in which conductive protrusions are formed by etching and a portion of the semiconductor package substrate serving as a frame as viewed from above. The surrounding irregularities are dams 1.

金属箔に導電性突起を形成した配線部材において、導電性突起の形状は、円形、方形、凹凸などでもよく、特に限定しない。しかし、上記と同様に、薄い金属箔に導電性突起を形成した配線部材において、導電性突起の周辺の薄い金属箔に応力集中しやすく、導電性突起が比較的大きい場合(2mm角以上)、製造工程の取り扱いにより薄い金属箔が導電性突起との境目で破損しやすい傾向がある。このような場合も導電性突起の形状を、金属箔表面に接する面で直線形状でなく凹凸形状にすることで絶縁樹脂との接着面積を大きくし、直線部分を減らすことで、破損しにくくすることができるので好ましい。この凹凸構造と形状の例としては、図1(a)〜(d)に示すような形状に類似な形状があげられ、ダムとなる機能部分を除いた図1(e)〜(h)に示すような凹凸形状、三角形凹凸形状、鍵穴凹凸形状、L型凹凸形状などが、好ましい。これにより密着性が向上し、かつ破壊の伝播を防ぐことができる。   In the wiring member in which the conductive protrusions are formed on the metal foil, the shape of the conductive protrusions may be circular, square, uneven, or the like, and is not particularly limited. However, in the same manner as described above, in a wiring member in which conductive protrusions are formed on a thin metal foil, it is easy to concentrate stress on the thin metal foil around the conductive protrusions, and when the conductive protrusions are relatively large (2 mm square or more), A thin metal foil tends to be easily broken at the boundary with conductive protrusions due to the handling of the manufacturing process. Even in such a case, the shape of the conductive protrusions is not a straight shape on the surface in contact with the surface of the metal foil, but an uneven shape, thereby increasing the adhesion area with the insulating resin and reducing the straight portion, thereby making it difficult to break. This is preferable. Examples of the concavo-convex structure and shape include shapes similar to the shapes shown in FIGS. 1A to 1D, and FIGS. 1E to 1H except for the functional portion that becomes a dam. An uneven shape as shown, a triangular uneven shape, a keyhole uneven shape, an L-shaped uneven shape, and the like are preferable. Thereby, adhesion can be improved and propagation of destruction can be prevented.

配線板において、ほとんどの場合、すべての部分に配線が施されることはない。特に半導体パッケージ用基板の場合、図3のようなフレーム形状で半導体チップ実装が行われることが多く、フレームの長手側両端は搬送用および位置決め用に使われるため、電気めっきのための給電線や位置決めマーカのパターンぐらいしか配線はない。しかしながらフレーム両端部は搬送等で機械的負荷がかかりやすい。基板厚みが薄くなればなるほど、強度対策が必要となる。   In a wiring board, in most cases, wiring is not applied to all parts. In particular, in the case of a substrate for a semiconductor package, semiconductor chips are often mounted in a frame shape as shown in FIG. 3, and both ends of the longitudinal side of the frame are used for transportation and positioning. There is only wiring for the positioning marker pattern. However, both ends of the frame are likely to be mechanically loaded during transportation. As the substrate thickness becomes thinner, strength measures are required.

配線板の配線が施されていない部分にダミーの金属突起物を埋め込むことは、配線板の強度強化に有効である。このような構造を得るためには、金属箔表面に複数の導電性突起を有する配線部材において、配線に使用される複数の導電性突起以外に、配線が施される予定のない複数のダミーの導電性突起を有する配線部材を使用すればよい。そして、配線が施される予定のない複数のダミーの導電性突起を、配線板のダミーの金属突起物とすればよい。特に、金属箔表面に複数の導電性突起を有する配線部材として、第1の金属層、第2の金属層および第3の金属層の少なくとも3層をこの順で有する多層金属箔の第1の金属層を、配線に使用される導電性突起A(図3中2)となる部分と配線が施される予定のないダミーの導電性突起B(図3中3)になる部分を残して、第2または第3の金属層が露出するまで除去する方法で形成した配線部材であれば、工程を増やさずに容易にこのような構造を得ることができる。この構造を半導体パッケージ用基板のフレームの長手側端部に形成すれば図3のようにダミーの導電性突起B 3を密集させて形成できるため、強度を大幅に改善でき、非常に有効である。   Embedding a dummy metal protrusion in a portion of the wiring board where wiring is not applied is effective in enhancing the strength of the wiring board. In order to obtain such a structure, in the wiring member having a plurality of conductive protrusions on the surface of the metal foil, in addition to the plurality of conductive protrusions used for the wiring, a plurality of dummy A wiring member having conductive protrusions may be used. A plurality of dummy conductive protrusions that are not scheduled to be wired may be used as dummy metal protrusions on the wiring board. In particular, as a wiring member having a plurality of conductive protrusions on the surface of the metal foil, the first of the multilayer metal foil having at least three layers of the first metal layer, the second metal layer, and the third metal layer in this order. The metal layer is left with a portion that becomes a conductive projection A (2 in FIG. 3) used for wiring and a portion that becomes a dummy conductive projection B (3 in FIG. 3) that is not scheduled to be wired. If it is a wiring member formed by the method of removing until the 2nd or 3rd metal layer is exposed, such a structure can be obtained easily, without increasing a process. If this structure is formed at the longitudinal end of the frame of the semiconductor package substrate, dummy conductive protrusions B3 can be formed densely as shown in FIG. 3, so that the strength can be greatly improved and it is very effective. .

このダミーの導電性突起Bの形状と配列の例として、図4に金属箔表面に接する面のダミーの導電性突起Bの形状・配列を示した。形状としては図4(a)、(b)のような方形、図4(c)、(d)のような円形、楕円形、図4(e)、(f)に示すような菱形、図4(g)の三角形、図5(h)の六角形等の多角形、図5(i)のような卍型等のダミー導電性突起同士がお互い絡み合うように工夫した複雑な形状等が挙げられる。なお配線板の強度強化に有効な形状であれば、図4に示した形状・配列に限定されない。配列としては、格子状、千鳥等の他、一方向からのストレスに対して破損が伝播しにくいように、それぞれの突起が交差するような形状、たとえば図4(b)、(e)〜(i)のように配置すると、強度上より有効である。なお、図4に示した形状を、配線に使用される導電性突起Aに用いてもかまわない。   As an example of the shape and arrangement of the dummy conductive protrusions B, FIG. 4 shows the shape and arrangement of the dummy conductive protrusions B on the surface in contact with the surface of the metal foil. As the shape, a square as shown in FIGS. 4A and 4B, a circle and an ellipse as shown in FIGS. 4C and 4D, a diamond as shown in FIGS. 4E and 4F, and a figure. Examples include 4 (g) triangles, polygons such as hexagons in FIG. 5 (h), and complex shapes devised so that dummy conductive protrusions such as saddles as shown in FIG. 5 (i) are intertwined with each other. It is done. Note that the shape and arrangement shown in FIG. 4 are not limited as long as the shape is effective for strengthening the strength of the wiring board. As the arrangement, in addition to a lattice shape, a staggered pattern, and the like, a shape in which the protrusions intersect so that damage is not easily propagated to stress from one direction, for example, FIG. 4B, FIG. The arrangement as in i) is more effective in terms of strength. Note that the shape shown in FIG. 4 may be used for the conductive protrusion A used for wiring.

ダミーの金属突起物の隙間をより小さくすることで、絶縁樹脂の占有率をより少なくすることが望ましいが、形成できる隙間には限界がある。金属箔表面に複数の導電性突起を有する配線部材として、第1の金属層、第2の金属層および第3の金属層の少なくとも3層をこの順で有する多層金属箔の第1の金属層を、導電性突起Aとなる部分とダミーの導電性突起Bになる部分を残して第2または第3の金属層が露出するまで除去する方法においては、第1層の厚みにより形成できる隙間が制限される。具体的には、最小隙間幅は第1層の厚みの1倍以上が必要である。またダミーの金属突起物の大きさ(幅など)は小さくしすぎると絶縁樹脂の占有率が高くなり、配線部材の強度が低下するため、例えばダミーの導電性突起Bの形状が正方形であれば、その幅(辺)は、導電性突起間の隙間幅の2倍以上の大きさであることが望ましい。また、ダミーの金属突起物の大きさ(幅など)を大きくすると絶縁樹脂の占有率を下げることはできるが、金属突起物が塑性変形し易くなりまた、樹脂との収縮差でも変形しやすくなる。そのため、図4に示したダミーの導電性突起Bの形状(方形、円形、楕円形、菱形、三角形、六角形、卍型など)の場合、その外形寸法(直径、対角線、辺など)は、5mm以下がのぞましい。   Although it is desirable to reduce the occupation ratio of the insulating resin by making the gap between the dummy metal projections smaller, there is a limit to the gap that can be formed. As a wiring member having a plurality of conductive protrusions on the surface of the metal foil, the first metal layer of the multilayer metal foil having at least three layers of the first metal layer, the second metal layer, and the third metal layer in this order. Is removed until the second or third metal layer is exposed, leaving a portion that becomes the conductive protrusion A and a portion that becomes the dummy conductive protrusion B, there is a gap that can be formed depending on the thickness of the first layer. Limited. Specifically, the minimum gap width needs to be 1 time or more of the thickness of the first layer. Further, if the size (width, etc.) of the dummy metal protrusion is too small, the occupation ratio of the insulating resin increases and the strength of the wiring member decreases. For example, if the dummy conductive protrusion B has a square shape, The width (side) is preferably at least twice as large as the gap width between the conductive protrusions. In addition, if the size (width, etc.) of the dummy metal projection is increased, the occupation ratio of the insulating resin can be reduced. However, the metal projection is likely to be plastically deformed, and is also likely to be deformed due to a contraction difference with the resin. . Therefore, in the case of the shape of the dummy conductive protrusion B shown in FIG. 4 (square, circle, ellipse, rhombus, triangle, hexagon, saddle, etc.), the external dimensions (diameter, diagonal, side, etc.) are as follows: 5mm or less is desirable.

金属箔表面に複数の導電性突起を有する配線部材として、第1の金属層、第2の金属層および第3の金属層の少なくとも3層をこの順で有する多層金属箔の第1の金属層を、導電性突起となる部分を残して第2または第3の金属層が露出するまで除去する方法で形成した配線部材を取り扱う上で、第2、第3の金属層が薄い(厚み1〜10μm)場合、予め導電性突起を形成する前に突起を形成する反対面に補強用のテープを貼り付けるか、または補強用の樹脂を塗布しておくことが有効である。これにより第1の金属層のエッチング後、しわ等による第2、第3層金属の変形を防ぐことができる。   As a wiring member having a plurality of conductive protrusions on the surface of the metal foil, the first metal layer of the multilayer metal foil having at least three layers of the first metal layer, the second metal layer, and the third metal layer in this order. The second and third metal layers are thin (thickness 1 to 3) when handling the wiring member formed by removing the second protrusion or the third metal layer until the second or third metal layer is exposed, leaving a portion that becomes a conductive protrusion. 10 μm), it is effective to apply a reinforcing tape or apply a reinforcing resin to the opposite surface on which the protrusions are formed in advance before forming the conductive protrusions. Thereby, after the etching of the first metal layer, deformation of the second and third layer metals due to wrinkles or the like can be prevented.

補強用のテープとしては、現像、エッチング、レジスト剥離に使用される薬液に耐え、かつ絶縁樹脂塗布、乾燥、硬化時の溶剤、熱等に耐えることが必要である。また、テープの材料としては、配線部材と熱膨張率が近いことが好ましい。テープの材料としては、耐熱性の高いポリイミドテープ、紙、ポリフェニレンサルファイド樹脂、アルミ、銅、鉄等を用いた金属テープ等があり、テープの粘着材としては、シリコン樹脂、アクリル樹脂等があげられる。使用するテープは絶縁樹脂埋込後、除去するので、糊残りの少なく、はがし易い粘着力(ピール強度0.5KN/m以下)であることがのぞましい。また熱により粘着力が落ちるテープを使うと加工時は剥がれにくく、絶縁樹脂硬化後は剥がれやすくなり便利である。   As a reinforcing tape, it is necessary to withstand chemicals used for development, etching, and resist peeling, and to withstand solvents, heat, and the like during application of insulating resin, drying, and curing. The tape material preferably has a thermal expansion coefficient close to that of the wiring member. Examples of tape materials include highly heat-resistant polyimide tape, paper, polyphenylene sulfide resin, metal tape using aluminum, copper, iron, and the like, and examples of tape adhesive materials include silicon resin and acrylic resin. . Since the tape to be used is removed after embedding the insulating resin, it is preferable that there is little adhesive residue and the adhesive strength is easy to peel off (peel strength 0.5 KN / m or less). Use of a tape whose adhesive strength is reduced by heat is convenient because it is difficult to peel off during processing, and it is easy to peel off after the insulating resin is cured.

補強用の樹脂としては、現像、エッチングレジスト剥離に使用される薬液に耐え、かつ絶縁樹脂塗布、乾燥、硬化時の溶剤、熱等に耐えること必要である。また、配線部材と熱膨張率が近いことが好ましい。樹脂材料としては、ポリイミド樹脂、ポリアミドイミド樹脂、シリコーン樹脂、フェノール樹脂、ビスマレイミドトリアジン樹脂、エポキシ樹脂、アクリル樹脂等の熱硬化性樹脂、ポリフェニレンサルファイド樹脂、感光性ポリイミド樹脂、アクリルエポキシ樹脂、エチレン、プロピレン、スチレン、ブタジエン等の熱可塑性エラストマー、液晶ポリマー等がある。また配線部材との熱膨張率を合わせるために、これら樹脂材料に有機粒子や無機粒子を配合したものも使用することができる。樹脂材料に配合することができる有機粒子の例としては、前述の樹脂材料の硬化物、また無機粒子の例としては、アルミナ粒子、二酸化ケイ素(シリカ)、ガラス繊維等が挙げられる。補強用の樹脂は、絶縁樹脂埋込後除去するので、糊残りの少なく、はがし易い粘着力(ピール強度0.5KN/m以下)であることがのぞましい。また熱により密着粘着力が落ちる樹脂を使うと、加工時は剥がれにくく、絶縁樹脂硬化後は剥がれやすくなり便利である。   As a reinforcing resin, it is necessary to withstand chemicals used for development and etching resist peeling, and to withstand solvents, heat, and the like during application, drying, and curing of insulating resin. Moreover, it is preferable that a thermal expansion coefficient is near with a wiring member. Examples of resin materials include polyimide resins, polyamideimide resins, silicone resins, phenol resins, bismaleimide triazine resins, epoxy resins, acrylic resins, and other thermosetting resins, polyphenylene sulfide resins, photosensitive polyimide resins, acrylic epoxy resins, ethylene, There are thermoplastic elastomers such as propylene, styrene and butadiene, and liquid crystal polymers. Moreover, in order to match the coefficient of thermal expansion with the wiring member, it is also possible to use those resin materials blended with organic particles or inorganic particles. Examples of the organic particles that can be blended in the resin material include a cured product of the resin material described above, and examples of the inorganic particles include alumina particles, silicon dioxide (silica), glass fibers, and the like. Since the reinforcing resin is removed after embedding the insulating resin, it is preferable that there is little adhesive residue and the adhesive strength is easy to peel off (peel strength 0.5 KN / m or less). Use of a resin whose adhesion and adhesive strength is reduced by heat is convenient because it is difficult to peel off during processing and easily peels off after the insulating resin is cured.

また、補強用テープや補強用樹脂と同等の効果を、例えば以下のような配線部材を使用することで実現できる。金属箔表面に複数の導電性突起を有する配線部材として、第1の金属層、第2の金属層、第3の金属層、および厚み10μm以上の第4の金属層の少なくとも4層を、この順で有する多層金属箔を用い、第1の金属層を導電性突起となる部分を残して、第2または第3の金属層が露出するまで除去する。絶縁樹脂を埋込んだ後に、補強の役目をした第4の金属層を選択除去する。このとき、第4の金属層をエッチングで除去するのであれば、第4の金属層は、第1の金属層、第2の金属層、第3の金属層とは、選択エッチング可能な金属であることが望ましい。また、第4の金属層と、第3の金属層との密着が、ピール強度で0.5KN/m以下であれば、剥がし、第4の金属層を除去することも可能である。   In addition, the same effect as that of the reinforcing tape or the reinforcing resin can be realized by using, for example, the following wiring member. As a wiring member having a plurality of conductive protrusions on the surface of the metal foil, at least four layers of a first metal layer, a second metal layer, a third metal layer, and a fourth metal layer having a thickness of 10 μm or more are provided. Using the multilayer metal foil having the order, the first metal layer is removed until the second or third metal layer is exposed, leaving a portion to be a conductive protrusion. After embedding the insulating resin, the fourth metal layer serving as a reinforcement is selectively removed. At this time, if the fourth metal layer is removed by etching, the fourth metal layer is a metal that can be selectively etched with the first metal layer, the second metal layer, and the third metal layer. It is desirable to be. In addition, if the adhesion between the fourth metal layer and the third metal layer is 0.5 KN / m or less in terms of peel strength, the fourth metal layer can be removed by peeling.

配線部材、または配線板の貫通穴を形成する方法として、第1の金属層、第2の金属層および第3の金属層の少なくとも3層をこの順で有する多層金属箔の第1の金属層を、導電性突起となる部分を残して第2または第3の金属層が露出するまで除去する方法で形成した配線部材において、貫通穴になる部分に穴形状と同じ形状の導電性突起C(図3中4)を用意し、絶縁樹脂を充填、硬化後、導電性突起Cを保持している部分の第2および第3の金属層を除去し、しかる後、導電性突起Cを除去することにより、貫通穴を形成する方法がある。この方法を用いれば複数の穴を、複種類の穴形状で同時に形成することが可能となる。   As a method for forming a through hole in a wiring member or a wiring board, a first metal layer of a multilayer metal foil having at least three layers of a first metal layer, a second metal layer, and a third metal layer in this order. In the wiring member formed by removing the second metal layer until the second or third metal layer is exposed, leaving the portion that becomes the conductive protrusion, and the conductive protrusion C ( In FIG. 3, 4) is prepared, filled with an insulating resin, and cured, and then the second and third metal layers of the portion holding the conductive protrusion C are removed, and then the conductive protrusion C is removed. Thus, there is a method of forming a through hole. If this method is used, a plurality of holes can be simultaneously formed in a plurality of types of hole shapes.

また、貫通穴を形成する場合、一般的な製造工程では、ドリルやルータで穴加工するので、穴形状は角部に大きなアール(半円形)が付くため形状が制約される。しかし、本発明であれば、貫通穴形状は、第1の金属層をエッチング加工できる形状であれば、どのような形状でも可能である。円形、楕円形、方形、多角形はもちろんのこと、例えば図2のスリット穴用の導電性突起D(図2中5)のようにスリット状の形状でもよい。   Moreover, when forming a through-hole, since a hole is processed with a drill or a router in a general manufacturing process, the shape of the hole is restricted because a large round (semi-circle) is attached to the corner. However, according to the present invention, the shape of the through hole can be any shape as long as the first metal layer can be etched. Of course, a slit, such as a conductive protrusion D (5 in FIG. 2) for a slit hole in FIG.

貫通穴形状はエッチングにより決まるため、例えば四角いネガマスクを使用してエッチングした場合、4角の角がエッチングされて丸くなる。これはエッチング液のエッチング能力とエッチングされる金属層の厚みにより左右される。この丸みを低減する方法として、ネガマスクの角部形状をエッチングされる分太らせて、エッチング後鋭角になるように工夫する方法もある。   Since the shape of the through hole is determined by etching, for example, when etching is performed using a square negative mask, the four corners are etched and rounded. This depends on the etching ability of the etchant and the thickness of the metal layer to be etched. As a method of reducing the roundness, there is a method in which the corner portion of the negative mask is thickened by the amount to be etched so that it becomes an acute angle after etching.

貫通穴となる導電性突起Cの除去方法として、絶縁樹脂を充填硬化後、導電性突起Cを保持している部分の第2および第3の金属層を除去後、導電性突起C以外の導電性突起をドライフィルム等で保護し、導電性突起Cをエッチングで除去する方法がある。また外圧を絶縁樹脂Cから露出した導電性突起の片面に加え、導電性突起を押し出すことにより、機械的に除去する方法がある。   As a method of removing the conductive protrusions C that become the through holes, after filling and curing the insulating resin, removing the second and third metal layers of the portions holding the conductive protrusions C, and then removing the conductive protrusions C other than the conductive protrusions C. There is a method of protecting the conductive protrusions with a dry film or the like and removing the conductive protrusions C by etching. Further, there is a method of removing mechanically by applying an external pressure to one surface of the conductive protrusion exposed from the insulating resin C and pushing out the conductive protrusion.

この技術を応用して、配線板に止まり穴を形成することができる。すなわち、第1の金属層、第2の金属層および第3の金属層の少なくとも3層をこの順で有する多層金属箔の第1の金属層を、導電性突起となる部分と止まり穴となる導電性突起Cを残して第2または第3の金属層が露出するまで除去し、絶縁樹脂を充填後、止まり穴となる導電性突起C以外の部分をドライフィルム等で保護し、導電性突起Cの第1の金属層のみをエッチング除去する。これにより第2,第3の金属層を底部とする止まり穴を形成できる。なおさらに第2の金属層をエッチング除去して、第3の金属層のみを底部とする止まり穴も形成できる。   By applying this technique, a blind hole can be formed in the wiring board. That is, the first metal layer of the multilayer metal foil having at least three layers of the first metal layer, the second metal layer, and the third metal layer in this order becomes a portion that becomes a conductive protrusion and a blind hole. Remove the conductive protrusion C until the second or third metal layer is exposed, and after filling with insulating resin, protect the portions other than the conductive protrusion C that will become blind holes with a dry film or the like. Only the C first metal layer is etched away. Thereby, the blind hole which makes the 2nd, 3rd metal layer a bottom part can be formed. Still further, the second metal layer can be removed by etching to form a blind hole having only the third metal layer as a bottom.

導電性突起Cを除去する外圧、すなわち絶縁樹脂から露出した導電性突起Cの片面に力を加える方法の例として、導電性突起Cの形状に近くかつ若干小さい突起部で直接加圧する方法、加圧エアーで吹き飛ばす方法等がある。外圧を加える際、導電性突起Cの周辺を押さえ治具等で押さえておくことは、穴周りの絶縁樹脂を破損させないために重要である。また、外圧を加える方向として、導電性突起Cはエッチングで形成されるため、突起上端の方(第1の金属層側)が底の面より面積が小さくなる傾向があるので、エッチング面(第1の金属層側)から外圧を加えた方が、穴周辺の絶縁樹脂を破損させにくい。   As an example of an external pressure for removing the conductive protrusion C, that is, a method of applying a force to one surface of the conductive protrusion C exposed from the insulating resin, a method of directly applying pressure with a slightly small protrusion close to the shape of the conductive protrusion C, There are methods such as blowing off with pressurized air. When applying external pressure, it is important to hold the periphery of the conductive protrusion C with a holding jig or the like so as not to damage the insulating resin around the hole. In addition, since the conductive protrusion C is formed by etching as the direction in which the external pressure is applied, the area of the upper end of the protrusion (on the first metal layer side) tends to be smaller than the bottom surface. If the external pressure is applied from the metal layer side of 1), the insulating resin around the hole is less likely to be damaged.

以下、本発明の実施例によって本発明をさらに具体的に説明するが、本発明はこれら実施例に限定されるものではない。
(実施例1)
図に基づいて本発明の一実施例を説明する。図5は、本発明の配線部材及び半導体パッケージ用基板の各製造工程の断面を示す。
図5(a)に3層の金属箔に補強用のテープ13を貼り付けた断面図を示した。3層の金属箔は第1の層が厚さ70μmの銅層10、第2の層が0.6μmのニッケル層(バリア層)11、第3の層が10μmの銅層(回路層)12からなる3層の金属箔(日本電解株式会社製)で270×270mmのサイズに切り出し準備した。補強用テープ13は、耐熱性のあるTPSテープ(ENPT−480、寺岡製作所製)、厚み50μmを使用した。この補強用テープ13を3層金属箔の3層目12側にロールラミネータ(MSラミペットL−650、メイコー製)にて常温(25℃)でしわにならないように貼り付けを行った。
Hereinafter, the present invention will be described more specifically with reference to examples of the present invention, but the present invention is not limited to these examples.
(Example 1)
An embodiment of the present invention will be described with reference to the drawings. FIG. 5 shows a cross section of each manufacturing process of the wiring member and the semiconductor package substrate of the present invention.
FIG. 5A shows a cross-sectional view in which a reinforcing tape 13 is attached to a three-layer metal foil. In the three-layer metal foil, the first layer is a copper layer 10 having a thickness of 70 μm, the second layer is a nickel layer (barrier layer) 11 having a thickness of 0.6 μm, and the third layer is a copper layer (circuit layer) 12 having a thickness of 10 μm. A three-layer metal foil (manufactured by Nippon Electrolytic Co., Ltd.) was cut into a size of 270 × 270 mm and prepared. As the reinforcing tape 13, a heat-resistant TPS tape (ENPT-480, manufactured by Teraoka Seisakusho) and a thickness of 50 μm were used. This reinforcing tape 13 was attached to the third layer 12 side of the three-layer metal foil with a roll laminator (MS Lampet L-650, manufactured by Meiko) so as not to be wrinkled at room temperature (25 ° C.).

図5(b)は3層箔の第1の金属層および第2の金属層を導電性突起となる部分を残してエッチングした断面図である。金属箔(日本電解株式会社製)の第1層側を、フォトドライフィルムH−K350(日立化成工業株式会社製)を用いて、エッチングパターンを形成し、メルテックス社製エープロセス液(アンモニア銅錯塩20〜30重量%、塩化アンモニウム10〜20重量%およびアンモニア1〜10重量%含有)からなるアルカリエッチング液で、第1の銅層10を選択的にエッチングする。つぎに露出した第2の金属層であるニッケル層11の導電性突起以外の部分を、硝酸・過酸化水素水溶液からなるニッケル剥離液で選択的に除去することにより、図1(b)のように銅およびニッケルからなる直径250μmの円柱状の導電性突起A 2と配線板強度向上用のダミーの導電性突起B 3と貫通穴形成用の導電性突起C 4と絶縁樹脂形成時の液だれ防止用のダム構造1を形成した。絶縁樹脂との密着をよくするために、露出した厚さ10μmの第3の銅層12表面(導電性突起側)及び導電性突起の表面を、化学処理の表面粗化処理剤であるNBDII処理液(荏原電産株式会社製、硫酸7.5重量%、リン酸3.8重量%及び過酸化水素4.0重量%含有)による処理を施し、導電性突起の端面及び側面、露出した厚さ10μmの銅層12表面に、平均2μmの粗化面を得た。補強用のテープ13を貼ってあるため、これら作業において第3の銅層12は、しわ等の破損はなかった。   FIG. 5B is a cross-sectional view obtained by etching the first metal layer and the second metal layer of the three-layer foil leaving portions that become conductive protrusions. An etching pattern is formed on the first layer side of the metal foil (manufactured by Nippon Electrolytic Co., Ltd.) using a photo dry film H-K350 (manufactured by Hitachi Chemical Co., Ltd.), and an A process liquid (ammonia copper) manufactured by Meltex Co., Ltd. The first copper layer 10 is selectively etched with an alkaline etchant comprising a complex salt (20-30 wt%, ammonium chloride 10-20 wt% and ammonia 1-10 wt%). Next, the exposed portions of the nickel layer 11 other than the conductive protrusions of the nickel layer 11 as the second metal layer are selectively removed with a nickel stripping solution made of nitric acid / hydrogen peroxide aqueous solution, as shown in FIG. In addition, a cylindrical conductive protrusion A 2 having a diameter of 250 μm made of copper and nickel, a dummy conductive protrusion B 3 for improving the strength of a wiring board, a conductive protrusion C 4 for forming a through hole, and a liquid dripping when forming an insulating resin A dam structure 1 for prevention was formed. In order to improve the adhesion with the insulating resin, the exposed surface of the third copper layer 12 (conductive protrusion side) having a thickness of 10 μm and the surface of the conductive protrusion are treated with an NBDII treatment that is a surface roughening treatment agent for chemical treatment. Treated with liquid (Kashihara Densan Co., Ltd., containing 7.5% by weight sulfuric acid, 3.8% by weight phosphoric acid and 4.0% by weight hydrogen peroxide), and exposed and exposed end faces and side surfaces, exposed thickness A roughened surface having an average of 2 μm was obtained on the surface of the copper layer 12 having a thickness of 10 μm. Since the reinforcing tape 13 was applied, the third copper layer 12 was not damaged such as wrinkles in these operations.

図5(c)は、3層箔の第1の金属層および第2の金属層を導電性突起となる部分を残して、エッチングした部分に絶縁樹脂14を埋め込んだ断面図である。絶縁樹脂14には、シリコーン変性ポリアミドイミド樹脂からなるKS6600(日立化成工業株式会社製)を用いた。ワニス状態の粘度40pa・s(25℃)の上記樹脂を印刷機(VE−500、東レエンジニアリング株式会社製)で、複数の導電性突起部分の全部を塗布でき、かつダムの外周形状と同じ大きさに開口した厚さ80μmのメタルマスクを介して印刷した。120℃、30分乾燥することにより半硬化状態となり、溶剤分が揮発して、導電性突起の絶縁樹脂が盛り上がった断面形状となる。導電性突起表面の盛り上がった絶縁樹脂の厚みは、30μmであった。   FIG. 5C is a cross-sectional view in which the insulating resin 14 is embedded in the etched portion of the three-layer foil leaving the portions that become conductive protrusions in the first metal layer and the second metal layer. As the insulating resin 14, KS6600 (manufactured by Hitachi Chemical Co., Ltd.) made of silicone-modified polyamideimide resin was used. The above resin having a viscosity of 40 pa · s (25 ° C.) in the varnish state can be applied to all of the plurality of conductive protrusions with a printing machine (VE-500, manufactured by Toray Engineering Co., Ltd.) and has the same size as the outer peripheral shape of the dam. Printing was performed through a metal mask having a thickness of 80 μm that was opened. By drying at 120 ° C. for 30 minutes, a semi-cured state is obtained, and the solvent component is volatilized, resulting in a cross-sectional shape in which the insulating resin of the conductive protrusion is raised. The thickness of the raised insulating resin on the surface of the conductive protrusion was 30 μm.

図5(d)は埋め込んだ絶縁樹脂14を研磨して、導電性突起の頭部を露出させた断面図である。絶縁樹脂に埋め込まれた導電性突起の頭部を露出させるため、半硬化状態の絶縁樹脂14を市販の研磨紙(#400〜#2000)で平坦になる様に注意しながら研磨し、導電性突起頭部を露出させた。その後、180℃、30分、更に220℃30分の加熱を行って、絶縁樹脂14を硬化させた。最後に補強用テープ13を手作業でしわが寄らないように除去した。   FIG. 5D is a cross-sectional view in which the embedded insulating resin 14 is polished to expose the heads of the conductive protrusions. In order to expose the heads of the conductive protrusions embedded in the insulating resin, the semi-cured insulating resin 14 is polished with care using a commercially available abrasive paper (# 400 to # 2000) so as to be flat. The protruding head was exposed. Thereafter, the insulating resin 14 was cured by heating at 180 ° C. for 30 minutes and further at 220 ° C. for 30 minutes. Finally, the reinforcing tape 13 was removed by hand so as not to wrinkle.

図5(e)は研磨して導電性突起の頭部を露出させ、更に第3の銅層12をエッチング加工し、回路9を形成したものである。第3の銅層12を、メルテックス社製エープロセス液からなるアルカリエッチング液で選択的にエッチングして、導電性突起A 2と接続する回路9を形成した。また、この際ダミーの導電性突起部B 3においては、第3の銅層12を残し、貫通穴形成用の導電性突起部C 4においては、第3の銅箔12を導電性突起C 4の端面が露出するように除去した。これらは1つのネガフィルムを用いてドライフィルムラミネート、露光、エッチング、剥離を一度に行なった。   FIG. 5E shows a circuit 9 formed by polishing to expose the heads of the conductive protrusions and further etching the third copper layer 12. The third copper layer 12 was selectively etched with an alkaline etching solution made of Meltex A process liquid to form a circuit 9 connected to the conductive protrusion A2. In this case, the dummy copper conductive protrusion B 3 leaves the third copper layer 12, and the conductive protrusion C 4 for forming the through hole has the third copper foil 12 connected to the conductive protrusion C 4. It was removed so that the end face of was exposed. For these, one negative film was used for dry film lamination, exposure, etching, and peeling at a time.

図5(f)は第3の銅層12をエッチング加工し回路9を形成した後、貫通穴となる部分の導電性突起C 4を除去した断面図である。貫通穴形成用の導電性突起C 4より少し大きい穴の開いた治具の上に、導電性突起C 4と前記治具の穴を合わせて、第3の銅層12面を下にして配線部材を置き、貫通穴形成用突起C 4より少し小さい金属棒で、上から導電性突起C 4の端面を、垂直に突いて導電性突起C 4を除去した。これにより貫通穴20を形成することができた。これを配線部材とした。   FIG. 5F is a cross-sectional view in which after the third copper layer 12 is etched to form the circuit 9, the conductive protrusion C 4 in a portion that becomes a through hole is removed. The conductive protrusion C4 and the hole of the jig are aligned on the jig having a hole slightly larger than the conductive protrusion C4 for forming the through hole, and the third copper layer 12 surface faces down. The member was placed, and the conductive protrusion C 4 was removed by vertically protruding the end face of the conductive protrusion C 4 from above with a metal bar slightly smaller than the through-hole forming protrusion C 4. Thereby, the through hole 20 was able to be formed. This was used as a wiring member.

図5(g)は貫通穴となる部分の導電性突起C 4を除去したのち、両面にソルダーレジスト8を施した断面図である。感光性ソルダーレジストをスクリーン印刷で両面に貫通穴20部分を除いて塗布し、外部接続用のボンディングパッド、ボールパッド部等の部分のレジストを現像で抜いて、硬化することでソルダーレジスト8を形成した。その後、ソルダーレジスト8に隠されていない回路表面及び導電性突起の露出面に、電解ニッケル/金めっき(大和電機工業株式会社製)を形成し、半導体パッケージ用基板とした。   FIG. 5G is a cross-sectional view in which the solder resist 8 is applied to both sides after removing the conductive protrusions C 4 at the portions that become the through holes. A photosensitive solder resist is applied on both sides by screen printing except for the through-hole 20 part, and the resist such as a bonding pad for external connection and a ball pad part is removed by development and cured to form a solder resist 8 did. Thereafter, electrolytic nickel / gold plating (manufactured by Daiwa Denki Kogyo Co., Ltd.) was formed on the circuit surface not covered with the solder resist 8 and the exposed surface of the conductive protrusions, thereby obtaining a semiconductor package substrate.

図5(h)はソルダーレジスト8を施し電解ニッケル/金めっきしたのち、フレーム形状に外形加工した断面図である。ルーター加工機を用いて外形を加工した。これによりフレーム周辺部にダミーの導電性突起B 3が存在する構造となり、フレーム状態でもダミーの導電性突起B 3により、半導体パッケージ用基板の強度維持が図れた。   FIG. 5H is a cross-sectional view of the outer shape processed into a frame shape after the solder resist 8 is applied and electrolytic nickel / gold plating is performed. The external shape was machined using a router machine. As a result, a dummy conductive protrusion B3 is present at the periphery of the frame, and the strength of the semiconductor package substrate can be maintained by the dummy conductive protrusion B3 even in the frame state.

図5(i)はフレーム形状に外形加工したのち、半導体チップを実装した断面図である。まずこの半導体パッケージ用基板にダイボンディングフィルム18を仮貼り付けした後、半導体チップ17(サイズ8.6mm×8.6mm)を加熱加圧しながら、実装した。次に半導体チップ17のボンディングパッドと配線板のボンディングパッドにワイヤーボンダーHW2100(九州松下電器株式会社製)でワイヤーボンディング(金ワイヤー16)をおこない、接続した。さらにトランスファーモールド19を施し、チップおよび半導体パッケージ用基板を封止した。次にはんだボールを半導体パッケージ用基板の予めフラックスを塗布したボールパッド(露出した導電性突起2)上に載せ、リフロー炉で加熱はんだ付けを行い、はんだバンプ15を形成した。最後に図5(j)のようにダイシングマシンにて所定の大きさ(サイズ12mm×12mm)に切り出し、半導体装置21を製作した。   FIG. 5I is a cross-sectional view in which a semiconductor chip is mounted after the outer shape is processed into a frame shape. First, after the die bonding film 18 was temporarily attached to the semiconductor package substrate, the semiconductor chip 17 (size 8.6 mm × 8.6 mm) was mounted while being heated and pressurized. Next, wire bonding (gold wire 16) was performed and connected to the bonding pads of the semiconductor chip 17 and the bonding pads of the wiring board using a wire bonder HW2100 (manufactured by Kyushu Matsushita Electric Co., Ltd.). Further, a transfer mold 19 was applied to seal the chip and the substrate for the semiconductor package. Next, a solder ball was placed on a ball pad (exposed conductive protrusion 2) to which a flux was previously applied on a semiconductor package substrate, and heat soldering was performed in a reflow furnace to form a solder bump 15. Finally, as shown in FIG. 5 (j), the semiconductor device 21 was manufactured by cutting it into a predetermined size (size 12 mm × 12 mm) with a dicing machine.

以上、実施例に示したように、配線部材及び半導体パッケージ用基板において、しわ、やぶれ等の破損はまったく発生せず、半導体装置を効率よく製造することができた。   As described above, as shown in the examples, the wiring member and the semiconductor package substrate were not damaged at all, such as wrinkles and blurring, and the semiconductor device could be manufactured efficiently.

本発明の配線部材のダム(a)〜(d)及び導電性突起(e)〜(h)の凹凸形状の例の平面図。The top view of the example of the uneven | corrugated shape of the dam (a)-(d) and electroconductive protrusion (e)-(h) of the wiring member of this invention. 本発明の配線部材によるフレーム部の平面図。The top view of the flame | frame part by the wiring member of this invention. 本発明の配線部材によるフレームの平面図。The top view of the flame | frame by the wiring member of this invention. 本発明の配線部材のダミーの導電性突起Bの形状及び配列の例の平面図。The top view of the example of the shape and arrangement | sequence of the dummy electroconductive protrusion B of the wiring member of this invention. 本発明の配線部材及び半導体パッケージ用基板の製造工程断面図。Sectional drawing of the manufacturing process of the wiring member of this invention, and a board | substrate for semiconductor packages. フレーム部が多数個取りされたパネルの平面図。The top view of the panel from which many frame parts were taken.

符号の説明Explanation of symbols

1.ダム
2.導電性突起A
3.ダミーの導電性突起B
4.貫通穴用の導電性突起C
5.スリット穴用の導電性突起D
6.パネル
7.フレーム部
8.ソルダーレジスト
9.第3層の回路
10.第1の金属層
11.第2の金属層
12.第3の金属層
13.補強用テープ
14.絶縁樹脂
15.はんだバンプ(はんだボール)
16.金ワイヤー
17.半導体チップ
18.ダイボンディングフィルム
19.封止剤(トランスファモールド)
20.貫通穴
21.半導体装置
22.フレーム


1. Dam 2. Conductive protrusion A
3. Dummy conductive protrusion B
4). Conductive protrusion C for through hole
5. Conductive protrusion D for slit hole
6). Panel 7. Frame part 8. Solder resist9. Third layer circuit 10. First metal layer 11. Second metal layer 12. Third metal layer 13. Reinforcing tape 14. Insulating resin 15. Solder bump (solder ball)
16. Gold wire 17. Semiconductor chip 18. Die bonding film 19. Sealant (transfer mold)
20. Through hole 21. Semiconductor device 22. flame


Claims (9)

金属層表面に複数の導電性突起を形成する配線部材の製造方法において、第1の金属層、第2の金属層および第3の金属層の少なくとも3層をこの順で有する多層金属箔を準備する工程、導電性突起となる部分を残して第2または第3の金属層が露出するまで金属層を除去し導電性突起を形成する工程、導電性突起を埋込む絶縁樹脂が必要な部分の外周に沿い金属層表面にダムを形成する工程を含む配線部材の製造方法。   In a method for manufacturing a wiring member in which a plurality of conductive protrusions are formed on the surface of a metal layer, a multilayer metal foil having at least three layers of a first metal layer, a second metal layer, and a third metal layer in this order is prepared. Forming a conductive protrusion by removing the metal layer until the second or third metal layer is exposed, leaving a portion to be a conductive protrusion, and a portion requiring an insulating resin for embedding the conductive protrusion. A method for manufacturing a wiring member including a step of forming a dam on the surface of a metal layer along an outer periphery. ダムを形成する工程が、ダムとなる部分を残して第2または第3の金属層が露出するまで金属層を除去しダムを形成する工程である請求項に記載された配線部材の製造方法。 2. The method for manufacturing a wiring member according to claim 1 , wherein the step of forming a dam is a step of forming the dam by removing the metal layer until the second or third metal layer is exposed, leaving a portion to become the dam. . 導電性突起を形成する工程が、金属層表面に接する面が凹凸形状である導電性突起を形成する工程である請求項1または2に記載された配線部材の製造方法。 Forming a conductive projection method of the the wiring member according to claim 1 or 2 surface contacting the surface of the metal layer is a step of forming a conductive protrusion is uneven. ダムを形成する工程が、金属層表面に接する面が凹凸形状であるダムを形成する工程である請求項いずれかに記載された配線部材の製造方法。 The method for producing a wiring member according to any one of claims 1 to 3 , wherein the step of forming a dam is a step of forming a dam having a concave-convex shape on a surface in contact with the metal layer surface. 導電性突起となる部分を残して第2または第3の金属層が露出するまで金属層を除去し導電性突起を形成する工程の前に、導電性突起が形成される金属層表面の反対面に補強用のテープを貼り付ける工程を含む請求項いずれかに記載された配線部材の製造方法。 Before the step of forming the conductive protrusion by removing the metal layer until the second or third metal layer is exposed leaving the portion to be the conductive protrusion, the opposite surface of the metal layer surface on which the conductive protrusion is formed process for the preparation of a wiring member according to any one of claims 1 to 4 including the step of attaching a tape for reinforcement. 導電性突起となる部分を残して第2または第3の金属層が露出するまで金属層を除去し導電性突起を形成する工程の前に、導電性突起が形成される金属層表面の反対面に補強用の樹脂を塗布する工程を含む請求項いずれかに記載された配線部材の製造方法。 Before the step of forming the conductive protrusion by removing the metal layer until the second or third metal layer is exposed leaving the portion to be the conductive protrusion, the opposite surface of the metal layer surface on which the conductive protrusion is formed process for the preparation of a wiring member according to any one of claims 1 to 4, comprising the step of applying the resin for reinforcement. 導電性突起となる部分を残して第2または第3の金属層が露出するまで金属層を除去し導電性突起を形成する工程後、導電性突起を絶縁樹脂で埋込む工程、前記絶縁樹脂を硬化する工程、一部の導電性突起の保持層にあたる第2または第3の金属層を除去する工程、保持層にあたる第2または第3の金属層を除去した導電性突起を除去する工程を含む請求項いずれかに記載された配線部材の製造方法。 After the step of removing the metal layer and forming the conductive protrusions until the second or third metal layer is exposed, leaving the portion that becomes the conductive protrusions, the step of embedding the conductive protrusions with an insulating resin, A step of curing, a step of removing the second or third metal layer corresponding to the holding layer of a part of the conductive protrusions, and a step of removing the conductive protrusions after removing the second or third metal layer corresponding to the holding layer. The manufacturing method of the wiring member described in any one of Claims 1-6 . 導電性突起を除去する工程が、エッチングにより導電性突起を除去する工程である請求項に記載された配線部材の製造方法。 The method for manufacturing a wiring member according to claim 7 , wherein the step of removing the conductive protrusion is a step of removing the conductive protrusion by etching. 導電性突起を除去する工程が、絶縁樹脂から露出した導電性突起の片面に力を加え導電性突起を押し出すことにより導電性突起を除去する工程である請求項に記載された配線部材の製造方法。 8. The wiring member manufacturing method according to claim 7 , wherein the step of removing the conductive protrusion is a step of removing the conductive protrusion by applying a force to one surface of the conductive protrusion exposed from the insulating resin to push out the conductive protrusion. Method.
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