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JP4366990B2 - Projection optical system, exposure apparatus and exposure method - Google Patents
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JP4366990B2 - Projection optical system, exposure apparatus and exposure method - Google Patents

Projection optical system, exposure apparatus and exposure method Download PDF

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Publication number
JP4366990B2
JP4366990B2 JP2003129780A JP2003129780A JP4366990B2 JP 4366990 B2 JP4366990 B2 JP 4366990B2 JP 2003129780 A JP2003129780 A JP 2003129780A JP 2003129780 A JP2003129780 A JP 2003129780A JP 4366990 B2 JP4366990 B2 JP 4366990B2
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optical system
substrate
projection optical
light
optical path
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JP2004335746A (en
JP2004335746A5 (en
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弘範 池沢
泰弘 大村
道子 西山
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Nikon Corp
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Description

【0001】
【発明の属する技術分野】
本発明は、原版上に描画されたパターンを基板上に焼付転写する投影光学系を有する投影露光装置及び露光方法に関する。
【0002】
【従来の技術】
近年、感光性基板としてウエハに転写されるパターンの微細化が望まれている。これを達成するためには、露光波長の短波長化を図るか、投影光学系の開口数の増大化を図るかの2つの方法が考えられる。従来より、これらのうち、投影光学系の開口数の増大化を図る方法の一つとして、液浸式の投影露光装置が提案されている。液浸式の投影露光装置は、投影光学系の最もウエハ側のレンズ面とウエハとの空間、すなわち、作動距離(ワーキングディスタンス)の空間(以後、作動空間と呼ぶ。)の全部又はウエハ側の空間部分を水、油等の液体で満たす装置である。通常使用時の動作空間を占める空気の屈折率が1.0であるのに対し、例えば、油の屈折率は約1.6である。このため、作動空間の全部又はウエハ側の空間部分をこのような屈折率の高い液体に置換すれば、投影光学系のウエハ側の開口数を大きくし、露光パターンの微細化を図ることができる。
【0003】
【特許文献1】
特開2000−58436
【0004】
【発明が解決しようとする課題】
上記従来の液浸式の投影露光装置においては、作動空間の全部を屈折率の高い液体に置換した場合、投影光学系の最もウエハ側にあるレンズの屈折率の値と液体の屈折率との値が同じであれば問題はないが、一般に、レンズ硝材の屈折率の値と液浸に使用する液体の屈折率との値とは異なっており、この屈折率の差により光が屈折し収差が発生する。
ところで、一般に液浸式の光学系は、レンズから出射した光が空気中で結像することを前提としおらず、液体中において結像することを目的としている。よって、通常の空気中で使用した場合とは発生する収差は異なる。
【0005】
このような液浸式光学系で収差が発生した場合には、補正することが可能であるが、レンズの形状によっては補正で解消することができない場合があり、この場合、レンズの大型化を余儀なくされるといった問題点があり、この問題点を解決することが課題となる。
また、一般的に液浸式の投影光学系では、これに用いられているレンズにおける光の透過率と、液浸のために用いられている液体における光の透過率とが異なる場合が多い。特に短波長領域ではこの傾向が顕著であり、ArFに代表されるエキシマ光のような真空紫外光においては、レンズの硝材の透過率は高いが、液浸用に用いられる液体は、光を吸収するため透過率は硝材と比べて低い。
【0006】
このため、ウエハ上で結像される光線の光路が異なると、液体中における光の吸収量が異なり、結像性能に悪影響を与えるといった問題点がある。即ち、ウエハ上で結像される光線は、レチクル上の一点を起点とした光線が投影光学系を通り、ウエハ上の一点に集光されるが、この投影光学系を通過する光線は、投影光学系内において同一の光路をたどるのではなく、様々な光路をたどった光線がウエハ上にて集光し結像する。このため、液浸用の液体が光を吸収する場合、光線のたどった光路によって、液体を通過する距離も異なり、各々の光線の透過量も異なる。これにより、光線のたどった光路の相違により光の強弱が生じ、結像性能に悪影響を与えてしまうのである。
具体的に図3に基づき説明すると、最大像高の位置に結像される光線のうち、液浸用の液体中を通過する光路長が、最も短い距離U1と最も長い距離L1とでは、液体中を通過する距離が大きく異なる。この液体が光を吸収する場合、各々の光線の強さに強弱が生じてしまい、結像性能を劣化させる。このため、結像性能の劣化を防ぐことが課題となる。
【0007】
【課題を解決するための手段】
上記課題を解決するために、本発明の第1の態様では、原版上に描画されたパターンを基板の感光面に転写する投影光学系であって、前記投影光学系の最も基板側のレンズ面と前記基板の感光面との間の空間に、所定の液体を挿入可能な投影光学系において、前記投影光学系の最も基板側のレンズ面の曲率半径をRとし、前記基板の感光面に投影される最大像高をYとした場合に、
1<R/Y<7
を満たすことを特徴とする。
ここで、液浸とは、投影光学系の最も基板側のレンズ面と前記感光面との空間部分を液体で満たすことをいう。
また、最大像高Yは、感光面上において結像中心から最も離れた結像位置までの距離を示す。この最大像高は当該投影露光装置固有の値であり、収差等の悪影響を受けることなく結像可能な、結像中心からの最大の距離を意味する。このため、この値が小さくなりすぎると、一回の露光面積が狭くなり、生産効率を著しく低下させ、生産装置としての意義を失ってしまう。
【0008】
本発明の第2の態様は、原版上に描画されたパターンを基板の感光面に転写する投影光学系であって、前記投影光学系の最も基板側のレンズ面と前記基板の感光面との間の空間に、所定の液体を挿入可能な投影光学系において、前記投影光学系に用いられる硝材の全部或いは一部を光吸収のある硝材により形成し、前記液体中を透過する光線の一つが前記光吸収のある硝材内を透過する距離を前記一つの光線よりも前記液体中を透過する距離の長い他の光線が前記光吸収のある硝材内を透過する距離よりも、長くしたことを特徴とする。
これにより液浸用の液体が光を吸収する場合であっても、光路が相違した場合であっても各々の光線における光の吸収量を近づけることができ、基板の感光面上での結像性能の劣化を回避することができる。
【0009】
本発明の第3の態様は、原版上に描画されたパターンを基板の感光面に転写する投影光学系であって、前記投影光学系の最も基板側のレンズ面と前記基板の感光面との間の空間に、所定の液体を挿入可能な投影光学系において、前記基板の感光面に投影される最大像高となる位置に像を結像するための光路のうち、前記投影光学系の最も基板側のレンズ面と前記基板の感光面との間における光路長の最も短い光路が、前記原版から前記基板までの間にたどる投影光学系内の光路における光の吸収率をKUとし、前記投影光学系の最も基板側のレンズ面と前記基板の感光面との間における光路長の最も長い光路が、前記原版から前記基板までの間にたどる投影光学系内の光路における吸収率をKLとした場合、前記投影光学系に用いられる硝材の全部或いは一部を光吸収のある硝材により形成し、前記液体中を透過する距離の短い光路をたどる光線が、前記光吸収のある硝材内を透過する距離を長くし、前記液体中を透過する距離が長い光路をたどる光線が、前記光吸収のある硝材内を透過する距離を短くすることにより、
0.8<KU/KL<1.25
を満たすことを特徴とする。
【0010】
本発明の第4の態様は、上記第3の態様において、前記空間内に浸される液体媒体の単位あたりの透過率をT1とし、前記感光面に投影される最大像高となる位置に像を結像するための光路のうち、前記投影光学系の最も基板側のレンズ面と前記感光面との間における光路長が、最も短い光路の距離をU1とし、最も長い光路の距離をL1とし、投影光学系内の光吸収のある硝材の単位あたりの透過率をT2とし、前記最も短い光路の距離U1をたどる光線が前記硝材内を通過する長さをU2とし、前記最も長い光路の距離L1をたどる光線が前記硝材内を通過する長さをL2とした場合、
0.8<{1−(T1^U1)*(T2^U2)}/{1−(T1^L1)*(T2^L2)}<1.25を満たすことを特徴とする。
ここで、*は積を意味し、^はべき乗を意味しており、(T1^U1)は、T1のU1乗という意味である。
【0011】
本発明の第5の態様は、上記第1乃至第5の何れかの態様にかかる投影光学系を有する投影露光装置であって、前記投影光学系の最も基板側のレンズ面と前記基板の感光面との間の空間に所定の液体を挿入して原版上に描画されたパターンを基板の感光面に転写することを特徴とする。
さらに、本発明の第6の態様は、上記第5の態様にかかる投影露光装置を用いて露光する方法において、原版を所定の露光光で照明する照明工程と、投影光学系5を介して原版のパターン像を基板の感光面に露光する露光工程とを含むことを特徴とする露光方法である。
【0012】
【発明の実施の形態】
図1、図2及び図3にて本発明による投影露光装置の実施例を説明する。図1は、本発明に係る投影露光装置を示す図である。
本実施の形態では、照明工程と露光工程とを含む露光方法において、原版であるレチクル3のパターン像を基板であるウエハ8の感光面8a上に結像する。すなわち、ArFエキシマレーザー光源等の光源1から発した光束は、照明光学系2を経て、レチクルステージ4上に載置された原版としてのレチクル3のパターン面を均一に照射する。レチクル3のパターン面から発した露光光は、投影光学系5を介して、XYステージ7上に載置されたウエハ8の感光面8a上に、レチクル3のパターン面の像を結像する。
XYステージ7上には、箱型の液体遮断板6が設置されている。図1では簡単のため、液体遮断板6の断面のみを示す。そして、液体遮断板6に囲まれた空間に、水、油等の液体を入れて、作動空間を液体とすることができる。本発明の投影露光装置を液浸状態で使用する場合、図1では破線部まで液体Bを入れることにより、ウエハ8と投影光学系5のウエハ8側の面との空間を全て液体で浸されることとなる。
【0013】
ここで、図3における露光面で結像される最大像高をY(Yは感光面上において結像中心から最も離れた結像位置までの距離を示す。)、投影光学系の最も基板側のレンズ面の曲率半径Rとした場合に、
1<R/Y<7
を満たすように形成することにより、レンズを大型化することなく収差の補正を容易に行うことができる。
【0014】
尚、R/Yが1以下の場合では、曲率半径よりも露光面で結像される最大像高さの方が大きくなり、収差を補正等で解消することは困難となる。特に、口径が大きく曲率半径に近い半径の凹レンズの場合、レンズを出射した光線の一部が再びレンズ内に入る場合があり、この場合結像性能は極端に劣化する。更に、曲率半径の小さいレンズでは、レンズと基板の空間内に短時間で液体を供給、排出させることが困難となり、スループットの低下を招き生産装置としての機能を害することとなる。又、R/Yが7以上の場合では、像面収差補正が困難となり、レンズ外径の大型化が必要となる。よって、レンズを大型化することなく生産装置としての機能を確保するためには、R/Yは上記範囲内にあることが必要となる。
特に、生産装置のスループットの向上という面により着目するならば、更に2<R/Y<7の範囲であることが望ましい。
また、投影光学系においては、光のたどる光路に関係なく、原版であるレチクル3から基板であるウエハ8の間において、光の吸収量をほぼ同一とすることにより、液浸に用いる液体の光の吸収により生じていた結像性能の劣化を解消するものである。具体的には、投影光学系に用いられる硝材の一部を透過率の低い硝材により形成し、液体中を透過する距離が長い光路の光線は、透過率の低い硝材内を透過する距離を短くし、液体中を透過する距離の短い光路の光線は、透過率の低い硝材内を透過する距離を長くしたものである。
【0015】
このような構成の投影光学系では、同一起点から発せられた光線は異なる光路をたどったとしても、光の吸収量はほぼ同じとなり、同一強度の光がウエハ8上に到達するため結像性能に悪影響を与えることはない。
尚、光の透過率の低い硝材を用いることにより、光の吸収量の調整をしているが、投影光学系内のレンズとレンズの空間に光を吸収する気体例えば、一部大気を導入することにより、同様の効果を望むことも可能である。しかし、このような気体がレンズ面の曇の原因になること、気体の揺らぎにより、かえって結像性能を劣化させ、この解決方法も見当らないことにより、気体により透過率を調整する方法は妥当な解決方法ではない。
【0016】
上記のように光を吸収するレンズとして用いることができるものは投影光学系内でも限定され、光路に関係なく吸収量を全く同一にすることは困難であるが、この値が0.8から1.25の範囲内にあれば、結像性能に殆ど影響を与えることはない。即ち、この範囲外の場合には、光路により光の吸収量が異なり、著しく結像性能を劣化させてしまうが、この範囲内であれば光路による光の吸収量の差は少なく、結像性能を劣化させることはない。
【0017】
本発明に基づく具体的な第1実施例を説明する。
第1実施例は図3の構成に基づくもので、表1のレンズデータを有した投影光学系である。ここで、rは曲率半径、dは中心厚・面間隔、nは屈折率を示す。
【0018】
【表1】

Figure 0004366990
Figure 0004366990
この投影露光装置による最大像高Yは、当該投影露光装置固有の値であり、13.73mmである。又、最も基板側のレンズ面の曲率半径(G23−R2)は、52.057mmである。よって、R/Yの値は、3.791となる。
また、この投影露光装置において用いられる液浸用液体1cmあたりの光の透過率T1は、0.90であり、液体中の光路のうち短いものの距離U1は、0.356cmであり、長いものの距離L1は、0.598cmである。又、投影光学系内の吸収率の高いレンズ硝材1cmあたりの光の透過率T2は、0.98であり、U1の光路を投影光学系内でたどる光線の当該レンズ内を透過する光路の距離U2は、5.049cm、L1の光路を投影光学系内でたどる光線の当該レンズ内を透過する光路の距離L2は、2.505cmである。このU2、U2の値はL1、L1の投影光学系内の光路を計算することにより求めることができる。よって、{1−(T1^U1)*(T2^U2)}/{1−(T1^L1)*(T2^L2)}の値は、1.212となり、結像性能に悪影響を与えることはない。
ここで、比較として、このような吸収率の高いレンズを入れない場合、即ち、前記において吸収率の高いとされたレンズが他のレンズと同様に光をほとんど吸収せず透過する場合、近似的にT2を1と考えることができるため、{1−(T1^U1)*(T2^U2)}/{1−(T1^L1)*(T2^L2)}の値は、0.603となり、光の強度差が大きく、結像性能に悪影響を与える。
【0019】
本発明に基づく具体的な第2実施例を説明する。
第2実施例は図4の構成に基づくもので、表2のレンズデータを有した投影光学系である。
【0020】
【表2】
Figure 0004366990
Figure 0004366990
この投影露光装置による最大像高Yは、当該投影露光装置固有の値であり、13.73mmである。又、最も基板側のレンズ面の曲率半径(G27−R2)は、42.186mmである。よって、R/Yの値は、3.073となる。
また、この投影露光装置において用いられる液浸用液体1cmあたりの光の透過率T1は、0.90であり、液体中の光路のうち短いものの距離U1は、0.764cmであり、長いものの距離L1は、1.377cmである。又、投影光学系内の吸収率の高いレンズ硝材1cmあたりの光の透過率T2は、0.98であり、計算によりU1の光路を投影光学系内でたどる光線の当該レンズ内を透過する光路の距離U2は、4.315cm、L1の光路を投影光学系内でたどる光線の当該レンズ内を透過する光路の距離L2は、1.146cmである。
よって、{1−(T1^U1)*(T2^U2)}/{1−(T1^L1)*(T2^L2)}の値は、0.997となり、結像性能に悪影響を与えることはない。
【0021】
ここで、比較として、このような吸収率の高いレンズを入れない場合、即ち、前記において吸収率の高いとされたレンズが他のレンズと同様に光をほとんど吸収せず透過する場合、近似的にT2を1と考えることができるため、{1−(T1^U1)*(T2^U2)}/{1−(T1^L1)*(T2^L2)}の値は、0.573となり、光の強度差が大きく結像性能に悪影響を与える。
【0022】
【発明の効果】
本発明では、液浸の露光装置であっても収差や結像性能を劣化させることなく結像可能とすることができる。
特に、液浸に用いる液体が光を吸収する場合には、結像性能の劣化を回避することができ、所望の微細パターンを正確に焼き付けることができる。
【図面の簡単な説明】
【図1】は、液浸投影露光装置の概要図である。
【図2】は、液浸投影露光装置のうち、液浸となる部分の構成図である。
【図3】は、本発明の第1実施例による投影露光装置の光学系の構成図である。
【図4】は、本発明の第2実施例による投影露光装置の光学系の構成図である。
【符号の説明】
1・・・光源
2・・・照明光学系
3・・・レチクル
4・・・レチクルステージ
5・・・投影光学系
6・・・液体遮断板
7・・・ウエハステージ
8・・・ウエハ
8a・・・像面
9・・・投影光学系の最もウエハ側のレンズ
A・・・光線
B・・・液体[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a projection exposure apparatus and an exposure method having a projection optical system that prints and transfers a pattern drawn on an original onto a substrate.
[0002]
[Prior art]
In recent years, miniaturization of a pattern transferred to a wafer as a photosensitive substrate has been desired. In order to achieve this, two methods are conceivable: shortening the exposure wavelength or increasing the numerical aperture of the projection optical system. Conventionally, an immersion type projection exposure apparatus has been proposed as one of the methods for increasing the numerical aperture of the projection optical system. The immersion type projection exposure apparatus includes a space between the lens surface on the most wafer side of the projection optical system and the wafer, that is, a working distance (working distance) space (hereinafter referred to as working space) or the wafer side. It is a device that fills the space with a liquid such as water or oil. For example, the refractive index of oil is about 1.6, while the refractive index of air that occupies the operating space during normal use is 1.0. Therefore, if the entire working space or the wafer-side space is replaced with such a liquid having a high refractive index, the numerical aperture on the wafer side of the projection optical system can be increased and the exposure pattern can be miniaturized. .
[0003]
[Patent Document 1]
JP 2000-58436 A
[0004]
[Problems to be solved by the invention]
In the conventional immersion type projection exposure apparatus, when the entire working space is replaced with a liquid having a high refractive index, the refractive index value of the lens closest to the wafer in the projection optical system and the refractive index of the liquid If the values are the same, there is no problem, but in general, the refractive index value of the lens glass material is different from the refractive index value of the liquid used for immersion. Will occur.
By the way, in general, an immersion optical system does not assume that light emitted from a lens forms an image in the air, but aims to form an image in a liquid. Therefore, the generated aberration is different from that in the case of using in normal air.
[0005]
When aberration occurs in such an immersion optical system, it can be corrected, but depending on the shape of the lens, it may not be able to be eliminated by correction. There is a problem of being forced, and it becomes a problem to solve this problem.
In general, in a liquid immersion type projection optical system, the light transmittance of a lens used for this is often different from the light transmittance of a liquid used for liquid immersion. This tendency is particularly noticeable in the short wavelength region. In vacuum ultraviolet light such as excimer light represented by ArF, the transmittance of the glass material of the lens is high, but the liquid used for immersion absorbs light. Therefore, the transmittance is lower than that of the glass material.
[0006]
For this reason, if the optical path of the light beam that is imaged on the wafer is different, the amount of light absorbed in the liquid is different, which adversely affects the imaging performance. In other words, light rays that are imaged on the wafer are focused on a single point on the wafer through the projection optical system, and the light rays that pass through this projection optical system are projected. Rather than following the same optical path in the optical system, the light rays that follow various optical paths are condensed and imaged on the wafer. For this reason, when the immersion liquid absorbs light, the distance through which the liquid passes depends on the optical path followed by the light, and the amount of transmission of each light also differs. As a result, the intensity of the light is caused by the difference in the optical path followed by the light beam, which adversely affects the imaging performance.
More specifically, referring to FIG. 3, the light path length that passes through the liquid for immersion in the light beam formed at the position of the maximum image height has the shortest distance U1 and the longest distance L1. The distances that pass through it vary greatly. When this liquid absorbs light, the intensity of each light beam is increased and decreased, and the imaging performance is deteriorated. For this reason, it becomes a subject to prevent deterioration of imaging performance.
[0007]
[Means for Solving the Problems]
In order to solve the above-described problem, according to a first aspect of the present invention, there is provided a projection optical system for transferring a pattern drawn on an original to a photosensitive surface of a substrate, the lens surface closest to the substrate of the projection optical system. In the projection optical system in which a predetermined liquid can be inserted into the space between the substrate and the photosensitive surface of the substrate, the radius of curvature of the lens surface closest to the substrate of the projection optical system is R and the projection is projected onto the photosensitive surface of the substrate. If the maximum image height is Y,
1 <R / Y <7
It is characterized by satisfying.
Here, immersion refers to filling a space between the lens surface closest to the substrate of the projection optical system and the photosensitive surface with a liquid.
The maximum image height Y indicates the distance to the imaging position farthest from the imaging center on the photosensitive surface. This maximum image height is a value unique to the projection exposure apparatus, and means the maximum distance from the imaging center at which an image can be formed without being adversely affected by aberrations or the like. For this reason, if this value becomes too small, the exposure area of one time becomes narrow, the production efficiency is remarkably lowered, and the significance as a production apparatus is lost.
[0008]
According to a second aspect of the present invention, there is provided a projection optical system for transferring a pattern drawn on an original plate onto a photosensitive surface of a substrate, the lens surface closest to the substrate of the projection optical system and the photosensitive surface of the substrate. In a projection optical system in which a predetermined liquid can be inserted in a space between them, all or a part of the glass material used in the projection optical system is formed of a light-absorbing glass material, and one of the light rays transmitted through the liquid is wherein the other light beam long a distance transmitted through the glass material with the light absorption of the distance which passes the liquid than the one light beam than the distance transmitted through the glass material with the light absorption was increased And
This makes it possible to reduce the amount of light absorbed by each light beam even when the immersion liquid absorbs light or when the optical path is different, and forms an image on the photosensitive surface of the substrate. Performance degradation can be avoided.
[0009]
According to a third aspect of the present invention, there is provided a projection optical system for transferring a pattern drawn on an original plate onto a photosensitive surface of a substrate, and comprising a lens surface closest to the substrate of the projection optical system and a photosensitive surface of the substrate. In the projection optical system in which a predetermined liquid can be inserted into the space between the optical paths for forming an image at a position where the maximum image height is projected onto the photosensitive surface of the substrate, the most of the projection optical system The optical path having the shortest optical path length between the lens surface on the substrate side and the photosensitive surface of the substrate is KU, where the light absorption rate in the optical path in the projection optical system traced between the original plate and the substrate is KU. The optical path having the longest optical path length between the lens surface on the most substrate side of the optical system and the photosensitive surface of the substrate is defined as KL in the optical path in the projection optical system that is traced between the original plate and the substrate. Glass materials used in the projection optical system All or part of it is made of a light-absorbing glass material, and the light beam that follows the short optical path that passes through the liquid increases the distance that passes through the light-absorbing glass material and passes through the liquid. By shortening the distance that the light beam that follows the long optical path passes through the light-absorbing glass material,
0.8 <KU / KL <1.25
It is characterized by satisfying.
[0010]
According to a fourth aspect of the present invention, in the third aspect, the transmittance per unit of the liquid medium immersed in the space is T1, and the image is at a position where the maximum image height is projected onto the photosensitive surface. The optical path length between the lens surface on the most substrate side of the projection optical system and the photosensitive surface is U1, and the longest optical path distance is L1. T2 is the transmittance per unit of the light-absorbing glass material in the projection optical system, and U2 is the length of the light beam that passes through the shortest optical path distance U1, and the longest optical path distance. When the length of the light beam that follows L1 passes through the glass material is L2,
0.8 <{1- (T1 ^ U1) * (T2 ^ U2)} / {1- (T1 ^ L1) * (T2 ^ L2)} <1.25 is satisfied.
Here, * means a product, ^ means a power, and (T1 ^ U1) means U1 of T1.
[0011]
According to a fifth aspect of the present invention, there is provided a projection exposure apparatus having the projection optical system according to any one of the first to fifth aspects, wherein the lens surface closest to the substrate of the projection optical system and the photosensitive of the substrate. A predetermined liquid is inserted into a space between the substrate and a pattern drawn on the original plate is transferred to the photosensitive surface of the substrate.
Further, according to a sixth aspect of the present invention, in the exposure method using the projection exposure apparatus according to the fifth aspect, an illumination step of illuminating the original with predetermined exposure light, and the original via the projection optical system 5 And an exposure step of exposing the pattern image to the photosensitive surface of the substrate.
[0012]
DETAILED DESCRIPTION OF THE INVENTION
An embodiment of a projection exposure apparatus according to the present invention will be described with reference to FIGS. FIG. 1 is a view showing a projection exposure apparatus according to the present invention.
In the present embodiment, in an exposure method including an illumination process and an exposure process, a pattern image of the reticle 3 as an original is formed on the photosensitive surface 8a of the wafer 8 as a substrate. That is, a light beam emitted from a light source 1 such as an ArF excimer laser light source uniformly irradiates a pattern surface of a reticle 3 as an original placed on a reticle stage 4 through an illumination optical system 2. The exposure light emitted from the pattern surface of the reticle 3 forms an image of the pattern surface of the reticle 3 on the photosensitive surface 8 a of the wafer 8 placed on the XY stage 7 via the projection optical system 5.
A box-shaped liquid blocking plate 6 is installed on the XY stage 7. For the sake of simplicity, only the cross section of the liquid blocking plate 6 is shown in FIG. Then, a liquid such as water or oil can be put into the space surrounded by the liquid blocking plate 6 to make the working space a liquid. When the projection exposure apparatus of the present invention is used in a liquid immersion state, the liquid B is filled up to the broken line portion in FIG. 1 so that the entire space between the wafer 8 and the surface of the projection optical system 5 on the wafer 8 side is immersed in the liquid. The Rukoto.
[0013]
Here, the maximum image height formed on the exposure surface in FIG. 3 is Y (Y indicates the distance from the image formation center to the image formation position furthest away on the photosensitive surface), the most substrate side of the projection optical system. When the radius of curvature R of the lens surface is
1 <R / Y <7
By forming so as to satisfy the above, it is possible to easily correct aberrations without increasing the size of the lens.
[0014]
When R / Y is 1 or less, the maximum image height formed on the exposure surface is larger than the radius of curvature, and it is difficult to eliminate the aberration by correction or the like. In particular, in the case of a concave lens having a large aperture and a radius close to the curvature radius, a part of the light beam emitted from the lens may enter the lens again, and in this case, the imaging performance is extremely deteriorated. Further, in a lens having a small radius of curvature, it is difficult to supply and discharge liquid in the space between the lens and the substrate in a short time, which causes a reduction in throughput and impairs the function as a production apparatus. Further, when R / Y is 7 or more, it is difficult to correct the field aberration, and it is necessary to increase the lens outer diameter. Therefore, in order to ensure the function as a production apparatus without increasing the size of the lens, R / Y needs to be within the above range.
In particular, if attention is paid to the improvement of the throughput of the production apparatus, it is desirable that the range of 2 <R / Y <7.
Further, in the projection optical system, the light absorption amount is substantially the same between the reticle 3 serving as the original and the wafer 8 serving as the substrate, regardless of the optical path followed by the light, so that the liquid light used for the immersion can be obtained. This eliminates the deterioration of the imaging performance caused by the absorption of light. Specifically, a part of the glass material used in the projection optical system is formed of a glass material with a low transmittance, and the light beam in the optical path having a long distance transmitting through the liquid has a short distance to transmit through the glass material with a low transmittance. However, the light beam having a short distance that passes through the liquid has a longer distance through the glass material having a low transmittance.
[0015]
In the projection optical system having such a configuration, even if light rays emitted from the same starting point follow different optical paths, the amount of light absorption is almost the same, and light of the same intensity reaches the wafer 8, so that imaging performance is achieved. Will not be adversely affected.
The amount of light absorption is adjusted by using a glass material with low light transmittance, but a gas that absorbs light, for example, part of the atmosphere, is introduced into the lens and the lens space in the projection optical system. Therefore, it is possible to desire the same effect. However, such a gas causes fogging of the lens surface, and the imaging performance is deteriorated due to the fluctuation of the gas, and this solution is not found. It is not a solution.
[0016]
What can be used as a lens that absorbs light as described above is also limited in the projection optical system, and it is difficult to make the amount of absorption completely the same regardless of the optical path, but this value is 0.8 to 1 If it is within the range of .25, the imaging performance is hardly affected. In other words, if it is out of this range, the amount of light absorption differs depending on the optical path, and the imaging performance is significantly deteriorated. Will not deteriorate.
[0017]
A specific first embodiment according to the present invention will be described.
The first embodiment is based on the configuration of FIG. 3 and is a projection optical system having the lens data shown in Table 1. Here, r is a radius of curvature, d is a center thickness / surface interval, and n is a refractive index.
[0018]
[Table 1]
Figure 0004366990
Figure 0004366990
The maximum image height Y by this projection exposure apparatus is a value unique to the projection exposure apparatus, and is 13.73 mm. Further, the radius of curvature (G23-R2) of the lens surface closest to the substrate is 52.057 mm. Therefore, the value of R / Y is 3.791.
The light transmittance T1 per 1 cm of the immersion liquid used in this projection exposure apparatus is 0.90, and the distance U1 of the short one of the optical paths in the liquid is 0.356 cm, which is a long distance. L1 is 0.598 cm. The light transmittance T2 per 1 cm of the lens glass material having a high absorptance in the projection optical system is 0.98, and the distance of the light path that passes through the lens in the projection optical system through the optical path U1. U2 is 5.049 cm, and the distance L2 of the optical path that passes through the lens of the light beam that follows the optical path of L1 in the projection optical system is 2.505 cm. The values of U2 and U2 can be obtained by calculating the optical paths in the L1 and L1 projection optical systems. Therefore, the value of {1- (T1 ^ U1) * (T2 ^ U2)} / {1- (T1 ^ L1) * (T2 ^ L2)} is 1.212, which adversely affects the imaging performance. There is no.
Here, as a comparison, when such a lens with high absorptance is not inserted, that is, when a lens with a high absorptance in the above does not absorb light like other lenses and transmits, it is approximate. Since T2 can be considered as 1, the value of {1- (T1 ^ U1) * (T2 ^ U2)} / {1- (T1 ^ L1) * (T2 ^ L2)} is 0.603. The light intensity difference is large, which adversely affects the imaging performance.
[0019]
A specific second embodiment based on the present invention will be described.
The second embodiment is based on the configuration of FIG. 4 and is a projection optical system having the lens data shown in Table 2.
[0020]
[Table 2]
Figure 0004366990
Figure 0004366990
The maximum image height Y by this projection exposure apparatus is a value unique to the projection exposure apparatus, and is 13.73 mm. The curvature radius (G27-R2) of the lens surface closest to the substrate is 42.186 mm. Therefore, the value of R / Y is 3.073.
Further, the light transmittance T1 per 1 cm of immersion liquid used in this projection exposure apparatus is 0.90, and the distance U1 of the short one of the optical paths in the liquid is 0.764 cm, which is a long distance. L1 is 1.377 cm. The light transmittance T2 per 1 cm of the lens glass material having high absorptance in the projection optical system is 0.98, and the optical path through which the light beam tracing U1 in the projection optical system is calculated is calculated. The distance U2 is 4.315 cm, and the distance L2 of the optical path that passes through the lens of the light beam that follows the optical path of L1 in the projection optical system is 1.146 cm.
Therefore, the value of {1- (T1 ^ U1) * (T2 ^ U2)} / {1- (T1 ^ L1) * (T2 ^ L2)} is 0.997, which adversely affects the imaging performance. There is no.
[0021]
Here, as a comparison, when such a lens with high absorptance is not inserted, that is, when a lens with a high absorptance in the above does not absorb light like other lenses and transmits, it is approximate. Since T2 can be considered as 1, the value of {1- (T1 ^ U1) * (T2 ^ U2)} / {1- (T1 ^ L1) * (T2 ^ L2)} is 0.573. The light intensity difference is large and adversely affects the imaging performance.
[0022]
【The invention's effect】
In the present invention, even an immersion exposure apparatus can form an image without deteriorating aberration and image formation performance.
In particular, when the liquid used for immersion absorbs light, it is possible to avoid deterioration of the imaging performance and to print a desired fine pattern accurately.
[Brief description of the drawings]
FIG. 1 is a schematic view of an immersion projection exposure apparatus.
FIG. 2 is a configuration diagram of a portion of the immersion projection exposure apparatus that is to be immersed.
FIG. 3 is a block diagram of an optical system of the projection exposure apparatus according to the first embodiment of the present invention.
FIG. 4 is a block diagram of an optical system of a projection exposure apparatus according to a second embodiment of the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Light source 2 ... Illumination optical system 3 ... Reticle 4 ... Reticle stage 5 ... Projection optical system 6 ... Liquid blocking plate 7 ... Wafer stage 8 ... Wafer 8a ..Image surface 9 ... Lens A on the most wafer side of the projection optical system ... Light beam B ... Liquid

Claims (5)

原版上に描画されたパターンを基板の感光面に転写する投影光学系であって、前記投影光学系の最も基板側のレンズ面と前記基板の感光面との間の空間に、所定の液体を挿入可能な投影光学系において、
前記投影光学系に用いられる硝材の全部或いは一部を光吸収のある硝材により形成し、前記液体中を透過する光線の一つが前記光吸収のある硝材内を透過する距離を前記一つの光線よりも前記液体中を透過する距離の長い他の光線が前記光吸収のある硝材内を透過する距離よりも、長くしたことを特徴とする投影光学系。
A projection optical system for transferring a pattern drawn on an original to a photosensitive surface of a substrate, wherein a predetermined liquid is applied to a space between the lens surface closest to the substrate of the projection optical system and the photosensitive surface of the substrate. In an insertable projection optical system,
All or a part of the glass material used in the projection optical system is formed of a light-absorbing glass material, and the distance that one of the light rays transmitted through the liquid passes through the glass material having the light absorption is determined by the one light beam. A projection optical system characterized in that the light beam having a longer distance to transmit through the liquid is longer than the distance to transmit through the glass material having light absorption.
前記基板の感光面に投影される最大像高となる位置に像を結像するための光路のうち、前記投影光学系の最も基板側のレンズ面と前記基板の感光面との間における光路長の最も短い光路が、前記原版から前記基板までの間にたどる投影光学系内の光路における光の吸収率をKUとし、前記投影光学系の最も基板側のレンズ面と前記基板の感光面との間における光路長の最も長い光路が、前記原版から前記基板までの間にたどる投影光学系内の光路における吸収率をKLとした場合、
0.8<KU/KL<1.25
を満たすことを特徴とする請求項1に記載の投影光学系。
Of the optical paths for forming an image at a position where the maximum image height is projected onto the photosensitive surface of the substrate, the optical path length between the lens surface closest to the substrate of the projection optical system and the photosensitive surface of the substrate The optical absorptance of light in the optical path in the projection optical system traced between the original plate and the substrate is KU, and the lens surface on the most substrate side of the projection optical system and the photosensitive surface of the substrate When the optical path having the longest optical path length between the original plate and the substrate is KL, the absorption rate in the optical path in the projection optical system
0.8 <KU / KL <1.25
The projection optical system according to claim 1, wherein:
前記空間内に浸される液体媒体の単位あたりの透過率をT1とし、前記基板の感光面に投影される最大像高となる位置に像を結像するための光路のうち、前記投影光学系の最も基板側のレンズ面と前記基板の感光面との間における光路長が、最も短い光路の距離をU1とし、最も長い光路の距離をL1とし、投影光学系内の光吸収のある硝材の単位あたりの透過率をT2とし、前記最も短い光路の距離U1をたどる光線が前記硝材内を通過する長さをU2とし、前記最も長い光路の距離L1をたどる光線が前記硝材内を通過する長さをL2とした場合、べき乗を^で表すと、
0.8<{1−(T1^U1)*(T2^U2)}/{1−(T1^L1)*(T2^L2)}<1.25を満たすことを特徴とする請求項2に記載の投影光学系。
Of the optical path for forming an image at a position where the maximum image height projected onto the photosensitive surface of the substrate is T1, where the transmittance per unit of the liquid medium immersed in the space is T1, the projection optical system The optical path length between the lens surface closest to the substrate and the photosensitive surface of the substrate is U1, where the distance of the shortest optical path is L1, the distance of the longest optical path is L1, and a glass material having light absorption in the projection optical system. The transmissivity per unit is T2, the length that the light ray that follows the shortest optical path distance U1 passes through the glass material is U2, and the light ray that follows the longest light path distance L1 passes through the glass material. If the power is L2, and the power is represented by ^,
3. It satisfies 0.8 <{1- (T1 ^ U1) * (T2 ^ U2)} / {1- (T1 ^ L1) * (T2 ^ L2)} <1.25. The projection optical system described.
請求項1乃至3の何れか一項に記載の投影光学系を有し、前記投影光学系の最も基板側のレンズ面と前記基板の感光面との間の空間に所定の液体を挿入して原版上に描画されたパターンを基板の感光面に転写することを特徴とする投影露光装置。A projection optical system according to claim 1 , wherein a predetermined liquid is inserted into a space between the lens surface closest to the substrate of the projection optical system and the photosensitive surface of the substrate. A projection exposure apparatus for transferring a pattern drawn on an original to a photosensitive surface of a substrate. 請求項4に記載の投影露光装置を用いて露光する方法において、前記原版を所定の露光光で照明する照明工程と、
前記投影光学系を介して前記原版のパターン像を前記基板の感光面に露光する露光工程とを含むことを特徴とする露光方法。
In the method of exposing using the projection exposure apparatus according to claim 4 , an illuminating step of illuminating the original with predetermined exposure light;
And an exposure step of exposing the pattern image of the original on the photosensitive surface of the substrate through the projection optical system.
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JP2007516613A (en) * 2003-12-15 2007-06-21 カール・ツアイス・エスエムテイ・アーゲー Objective lens as a microlithographic projection objective comprising at least one liquid lens
US20080151364A1 (en) 2004-01-14 2008-06-26 Carl Zeiss Smt Ag Catadioptric projection objective
KR101376931B1 (en) 2004-05-17 2014-03-25 칼 짜이스 에스엠티 게엠베하 Catadioptric projection objective with intermediate images
KR101248328B1 (en) * 2004-06-04 2013-04-01 칼 짜이스 에스엠티 게엠베하 Projection system with compensation of intensity variations and compensation element therefor
JP2007027438A (en) * 2005-07-15 2007-02-01 Nikon Corp Projection optical system, exposure apparatus, and device manufacturing method
EP1950795A4 (en) * 2005-11-01 2010-06-02 Nikon Corp EXPOSURE APPARATUS, EXPOSURE METHOD, AND METHOD FOR MANUFACTURING THE APPARATUS

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