JP4367290B2 - Method for manufacturing light emitting device - Google Patents

Description

  The present invention relates to a method for manufacturing a light emitting device in which a light emitting device wafer is cut into chips.

Conventionally, after forming a large number of electronic elements on a substrate, individual electronic elements are manufactured by cutting the substrate by machining or laser beam irradiation. In cutting by machining, it is difficult to suppress deviation from the target cutting position and occurrence of chipping. In the cutting with laser light, a mechanical load is not applied to the workpiece, so that the cut surface is finished finely, and fine processing and high-precision processing are possible by narrowing the beam diameter of the laser light. As an example of using laser light, a method is known in which a semiconductor wafer is bonded and fixed to a transparent holder through which laser light is transmitted, and the semiconductor wafer is cut by irradiating laser light from both front and back sides of the semiconductor wafer ( For example, see Patent Document 1).
JP-A-53-114669

  However, in the case where the semiconductor wafer as shown in Patent Document 1 described above is cut with a laser beam, it is not necessary to consider optical damage on the surface of the semiconductor element, and such a method is applied to the transparent crystal substrate. When applied as a method of cutting a light emitting element wafer including a light emitting portion including a transparent crystal substrate, there is a problem that the light emitting portion is optically damaged by foreign matter or the like generated during cutting with a laser beam.

  The present invention solves the above-described problems, and provides a method for manufacturing a light-emitting element capable of cutting a light-emitting element wafer into chips by cutting the light-emitting element wafer with high processing position without causing damage to the light-emitting element. For the purpose.

  In order to achieve the above-mentioned object, the invention of claim 1 is characterized in that a light-emitting element wafer in which a plurality of light-emitting element patterns each including a light-emitting portion and an electrode in which a semiconductor layer is stacked on a transparent crystal substrate is formed is provided for each light-emitting element pattern. In the method of manufacturing a light-emitting element by cutting to obtain a light-emitting element chip, a first step of arranging a resin on the light-emitting element pattern portion and bonding the light-emitting element wafer onto a transparent holding substrate with the resin, and the resin And a second step of irradiating the light emitting element wafer bonded to the holding substrate with the laser light in a state where the laser light is not irradiated on the portion, thereby cutting the wafer for each light emitting element pattern.

  According to a second aspect of the present invention, a light emitting element wafer in which a plurality of light emitting element patterns each composed of a light emitting portion and an electrode having a semiconductor layer laminated on a transparent crystal substrate is formed is cut into each light emitting element pattern to obtain a light emitting element chip. In the method for manufacturing a light emitting element, the light emitting element pattern surface is brought into contact with a transparent holding substrate surface, the light emitting element wafer is arranged on the holding substrate, and an opening facing the light emitting element pattern surface provided on the holding substrate is provided. A first step of vacuum-adsorbing the surface of the light-emitting element pattern to the holding substrate by evacuating the inside of the exhaust flow path having the structure, and fixing the light-emitting element wafer on the holding substrate; A second step of irradiating the light-emitting element wafer with laser light to cut the wafer for each light-emitting element pattern.

According to a third aspect of the present invention, a light emitting element wafer in which a plurality of light emitting element patterns each composed of a light emitting portion and an electrode having a semiconductor layer laminated on a transparent crystal substrate is formed is cut for each light emitting element pattern to obtain a light emitting element chip. In the method for manufacturing a light emitting element, the light emitting element pattern surface is brought into contact with a transparent holding substrate surface, the light emitting element wafer is disposed on the holding substrate, and a slit-like opening facing a cutting region provided around the light emitting portion a first step of fixing the light-emitting element wafer to said holding substrate by pressing said holding substrate the light emitting element wafer using a pressure contact plate that have a, the direction of the slit-shaped opening first By irradiating the light emitting element wafer fixed to the holding substrate with laser light passing through the slit-shaped opening in a state matched to the cutting direction, the wafer is first cut. Then, the laser beam passing through the slit-like opening is fixed to the holding substrate with the direction of the slit-like opening aligned with the second cutting direction by rotating the pressure contact plate by 90 °. A second step of irradiating the light-emitting element wafer, cutting the wafer along a second cutting direction, and cutting the light-emitting element wafer for each light-emitting element pattern . In the step, the pressure contact plate and the light emitting element wafer are bonded with a resin, a resin whose bonding strength can be controlled by temperature is used as the resin used for the bonding, and the pressure contact plate is provided with an electric resistor, and the electric resistor The bonding strength between the light emitting element wafer and the pressure contact plate is controlled by changing the bonding strength of the resin by the heat generated when power is supplied to the substrate .

According to a fourth aspect of the present invention, in the method of manufacturing a light emitting device according to any one of the first to third aspects, in the second step, only the outer peripheral portion of the light emitting device pattern is cut, and the light emitting device wafer is formed. The unprocessed part is left around.

According to a fifth aspect of the present invention, in the method for manufacturing a light emitting device according to any one of the first to third aspects, the holding substrate is a surface facing the light emitting device wafer and is irradiated with the laser beam. The part has a relief groove.

According to a sixth aspect of the present invention, in the method for manufacturing a light-emitting element according to any one of the first to third aspects, a silicon oxide-based material is disposed on the surface of the holding substrate facing the light-emitting element wafer. .

  According to the first aspect of the present invention, since the light emitting element wafer is cut in a state where the light emitting element wafer is bonded to the holding substrate with the resin disposed in the light emitting element pattern portion, the individual light emitting element chips are separated from chip to chip. It is never discrete. In addition, since the resin disposed in the light emitting element pattern portion protects the light emitting portion surface, foreign matter such as cutting powder and evaporation generated at the time of cutting adheres to the surface of the light emitting element pattern, and hence the light emitting portion surface. Can be prevented. In addition, since the resin portion is not irradiated with laser light, the generation of foreign matters such as evaporants that cause optical damage to the light emitting element wafer is suppressed, and damage to the light emitting element is suppressed.

  In addition, cutting can be performed by irradiating laser light from either the back side of the light emitting element wafer (the side where the light emitting portion is not formed) or the transparent holding substrate and transmitting from the holding substrate side. By cutting the light emitting element wafer by irradiating the cutting region with laser light from the back side of the former, the surface of the light emitting element pattern is less exposed to foreign matter contamination or heat load at the time of cutting, and the light emitting part is Damage can be suppressed. In this case, the holding substrate is transparent even if the holding substrate is irradiated with laser light that has passed through the transparent crystal substrate during cutting, or laser light that has come directly after cutting, so that the holding substrate is less damaged. There is little optical damage to the light emitting element wafer due to damage.

  According to the invention of claim 2, since the light emitting element wafer is cut in a state where the surface of the light emitting element pattern is vacuum-adsorbed on the holding substrate, the light emitting element chips separated into individual pieces are not scattered separately for each chip, In addition, the attachment of the light emitting element wafer to the holding substrate and the removal of the light emitting element chip from the holding substrate can be easily performed by controlling the vacuum suction force. In addition, since the surface of the light emitting element pattern is cut while being in contact with the surface of the holding substrate, it is possible to prevent foreign matter such as cutting powder or evaporation generated during cutting from adhering to the surface of the light emitting element pattern, and thus the surface of the light emitting portion. it can. In addition, the same effect as described above can be obtained by cutting the light emitting element wafer by irradiating the laser beam to the cutting region from the back side of the light emitting element wafer.

  According to the invention of claim 3, since the light emitting element wafer is cut in a state where the light emitting element pattern surface is brought into contact with the holding substrate surface and pressed using the pressure contact plate, the individual light emitting element chips are separated for each chip. In addition, the light emitting element wafer can be easily attached to and detached from the holding substrate by attaching and removing the pressure contact plate. In addition, since the surface of the light emitting element pattern is cut while being in contact with the surface of the holding substrate, it is possible to prevent foreign matter such as cutting powder or evaporation generated during cutting from adhering to the surface of the light emitting element pattern, and thus the surface of the light emitting portion. it can. In addition, the same effect as described above can be obtained by cutting the light emitting element wafer by irradiating the laser beam to the cutting region from the back side of the light emitting element wafer.

  In addition, the light emitting element wafer is usually formed by arranging light emitting element patterns in a grid pattern, and the light emitting element wafer is formed in a cutting region extending in two orthogonal directions provided around the light emitting portion (light emitting element pattern). Since it can cut | disconnect along a cutting line, a light emitting element wafer can be efficiently cut | disconnected using the press-contact board which has a slit-shaped opening which faces the cutting | disconnection area | region of one direction twice.

Further, when the light emitting element wafer is pressed and fixed to the holding substrate, it is possible to prevent the pressure contact plate and the light emitting element wafer from being displaced, thereby facilitating the fixing work, and by reducing the bonding strength of the resin, It can be easily detached from the light emitting element wafer.

In addition, since the bonding strength of the resin can be electrically controlled, the pressure contact plate and the light emitting element wafer can be easily attached and detached.

According to the invention of claim 4 , since the outer shape of the light emitting element wafer can be maintained, it is easy to handle the light emitting element wafer after cutting. In particular, in claim 3, it follows the direction of the first cutting. After the cutting, the pressure contact plate is rotated by 90 °, so that it is possible to prevent the light emitting element wafers from being separated when the pressure contact plate is removed.

According to the fifth aspect of the present invention, when the light emitting element wafer is cut by irradiating the cutting region with the laser beam from the back surface side of the light emitting element wafer, the laser light transmitted through the transparent crystal substrate during the cutting or directly flying after cutting. Since the laser beam diameter spreads when the laser beam to be passed through the escape groove, the energy density of the laser beam can be reduced, and the damage to the light-emitting element wafer can be suppressed by suppressing the damage of the holding substrate by the laser beam.

According to the invention of claim 6 , since the silicon oxide-based material is generally not easily damaged by the laser beam, the damage to the light emitting element wafer can be reduced by suppressing the damage of the holding substrate by the laser beam.

  Hereinafter, the manufacturing method of the light emitting element of this invention is demonstrated with reference to drawings. FIG. 1 shows a light emitting element chip 4 manufactured using the method for manufacturing a light emitting element according to the present invention and a light emitting element wafer 10 before cutting, and FIG. 2 shows the light emitting element chip 4 and the light emitting element wafer 10 in FIG. The cross section of is shown. In the light emitting element chip 4, a light emitting element pattern 20 including a plurality of light emitting portions 2 formed by laminating semiconductor layers 21 and 22 on the transparent crystal substrate 1 and electrodes 3 for supplying power to the light emitting portions 2 is formed. The light emitting element wafer 10 is obtained by cutting each light emitting element pattern 20. Light emitted from the light emitting element chip 4 is extracted from, for example, the surface of the light emitting unit 2 on the side not facing the transparent crystal substrate 1. Note that light transmitted through the transparent crystal substrate 1 can be taken out from the surface opposite to the surface of the light emitting unit 2.

  The above-described light emitting element chip 4 is an ultraviolet light emitting element, a blue light emitting element, a GaN light emitting element, or the like. The transparent crystal substrate 1 is made of, for example, a sapphire substrate. The semiconductor layers 21 and 22 constituting the light emitting unit 2 are p-type and n-type semiconductors having an active layer at the interface, and these are stacked on the transparent crystal substrate 1. An example of a method for manufacturing the light emitting element wafer 10 will be described. First, a semiconductor layer 21 made of n-type nitride is laminated on the transparent crystal substrate 1 made of sapphire substrate, and further a semiconductor layer 22 made of p-type nitride is laminated on the semiconductor layer 21 and patterned into a predetermined shape. The light emitting unit 2 is formed. In the patterning, the light emitting portions 2 having the cutting regions 9 arranged around each light emitting portion 2 and arranged in a grid pattern are formed, and a part of the lower semiconductor layer 21 is removed to secure a lower electrode forming region. The Next, electrodes 3 for supplying power to the respective semiconductor layers 21 and 22 made of p-type and n-type nitrides are formed, and a light-emitting element pattern 20 comprising these electrodes 3 and the pattern of the light-emitting portion 2 described above is formed. A plurality of light emitting element wafers 10 are completed. The light emitting element wafer 10 is cut along a cut surface 11 passing through the cutting region 9.

  Next, an outline of the cutting process of the light emitting element wafer 10 will be described with reference to FIG. The method for cutting the light emitting element wafer 10 to obtain the light emitting element chip 4 includes a first step of fixing the light emitting element wafer 10 on the holding substrate, and the light emitting element wafer 10 fixed to the holding substrate using a laser beam. A second step of cutting each pattern 20. In the first step, three types of fixing methods can be used. In Method 1, the light emitting element wafer is fixed to the holding substrate using a resin, in Method 2, the light emitting element wafer is fixed to the holding substrate using vacuum suction, and in Method 3, the light emitting element wafer is fixed to the holding substrate using a pressure contact plate. Fix it. An embodiment to which these three types of fixing methods are applied will be described.

(Embodiment 1)
FIG. 4 shows the first embodiment. The first embodiment uses the above-described resin method 1 as the fixing method in the first step. That is, the surface of the light emitting element pattern 20 is formed by the resin 6 interposed on the surface of the light emitting element pattern 20 with the surfaces of the plurality of light emitting element patterns 20 formed on the transparent crystal substrate 1 facing the surface of the transparent holding substrate 5. Is bonded to the surface of the holding substrate 5 to fix the light emitting element wafer 10 on the holding substrate 5. The cutting in the second step is performed by irradiating the laser beam LB from the surface of the light emitting element wafer 10 that does not face the holding substrate 5, that is, the surface (back surface) side of the light emitting element wafer on which the light emitting portion 2 is not formed. . Irradiation with the laser beam LB is performed along the cut surface 11 passing through the cutting region 9.

  In the above-described cutting method, the light-emitting element wafer 10 is held in a state where the bonding resin 6 is localized on the surface of the light-emitting element pattern 20 and the bonding resin 6 is excluded from the cutting region 9 around the light-emitting element pattern 20. 5 is fixed. As a result, the laser beam LB is not applied to the resin 6, so that the foreign matter from the resin 6 does not damage the light emitting element wafer 10. As the adhesive resin 6, a thermosetting resin or a photocurable resin can be used. In particular, an ultraviolet curable resin used for a silicon wafer dicing UV sheet or the like can be suitably used. Since such an ultraviolet curable resin has an adhesive strength in an uncured state, the light emitting element wafer 10 can be fixed, and an adhesive strength can be lowered by irradiating ultraviolet rays into a cured state. The light emitting element chip 4 can be easily peeled from the holding substrate 5 by irradiating with ultraviolet rays.

  Further, as the adhesive resin 6, a resin sheet whose adhesive strength can be controlled by temperature may be used. For example, an Intellimer tape manufactured by Landec, USA can be used. Further, when the bonding resin 6 is applied to the holding substrate 5, as a coating method, a method of applying a minute amount while positioning at a coating position corresponding to the surface of the light emitting element pattern 20 using a dispenser, or an inkjet method And a squeegee method using a mask. When the resin 6 remains on the surface of the light emitting element pattern 20 after the light emitting element chip 4 is peeled from the resin 6, or when the adhesive strength between the resin 6 and the surface of the light emitting element pattern 20 is too strong to peel off May be solution-treated using an etching agent or a solvent suitable for each resin 6. If the resin 6 is a PMMA resin, the resin 6 can be removed with an organic solvent such as acetone.

(Embodiment 2)
FIG. 5 shows a second embodiment. In the second embodiment, the above-described method 2 by vacuum suction is used as the fixing method in the first step. That is, the light emitting element wafer 10 is arranged on the holding substrate 5 by bringing the surface of the light emitting element pattern 20 formed on the transparent crystal substrate 1 into contact with the surface of the transparent holding substrate 5, and the light emitting element provided on the holding substrate 5. By evacuating the inside of the exhaust flow path 50 having an opening facing the surface of the pattern 20 as indicated by an arrow P, the surface of the light emitting element pattern 20 is vacuum-adsorbed to the holding substrate 5 to hold the light emitting element wafer 10. It is fixed on the substrate 5. The cutting in the second step is performed by irradiating the laser beam LB along the cutting surface 11 from the back surface side of the light emitting element wafer 10 as in the first embodiment.

  The position where the opening of the exhaust flow path 50 is provided is inside the surface of each light emitting element pattern 20. As a result, the laser beam LB is not irradiated to the opening 50, the exhaust flow path is not processed by the laser beam LB, and the vacuum suction force is not reduced, and the light-emitting element patterns 20 are vacuum-sucked. Therefore, the light emitting element chip 4 cut after the light emitting element wafer 10 is cut does not scatter.

(Embodiment 3)
FIG. 6 shows a third embodiment. In the third embodiment, the method 3 using the above-described pressure contact plate is used as the fixing method in the first step. That is, the surface of the plurality of light emitting element patterns 20 formed on the transparent crystal substrate 1 is brought into contact with the surface of the transparent holding substrate 5 so that the light emitting element wafer 10 is arranged on the holding substrate 5 and provided around the light emitting unit 2. The light emitting element wafer 10 is fixed on the holding substrate 5 by pressing the light emitting element wafer 10 against the holding substrate 5 using the press contact plate 7 having the slit-shaped opening 71 facing the cut area 9. The cutting in the second step is performed by irradiating the laser beam LB along the cutting surface 11 from the back surface side of the light emitting element wafer 10 as in the first embodiment. However, in the third embodiment, the laser beam LB that passes through the slit-shaped opening 71 is used.

(Embodiment 4)
7A to 7D show a fourth embodiment, and each drawing shows a main stage in the cutting of the light emitting element wafer 10. In the fourth embodiment, the method 1 using the resin 6 is used as the fixing method as in the first embodiment. In FIG. 7A, the bonding resin 6 is disposed on the surface of the transparent holding substrate 5 corresponding to the planned bonding position of the light emitting element pattern 20, and the light emitting element wafer 10 is opposed to the holding substrate 5. Indicates the state. The resin 6 may be disposed on the surface of the light emitting element pattern 20 instead of on the holding substrate 5. The transparent holding substrate 5 is used as a counterpart for fixing the light emitting element wafer 10 for the following reason. When cutting with high-power laser light using a UV sheet or the like used when dicing a silicon wafer instead of the transparent holding substrate 5, the UV sheet is processed by laser light transmitted through the light emitting element wafer 10 after the cutting is completed. As a result, the light emitting element chip 4 is damaged by foreign matter contamination. By using the transparent holding substrate 5, damage to the holding substrate 5 due to the laser beam LB can be suppressed, and occurrence of damage to the light emitting element chip 4 due to damage to the holding substrate 5 can be suppressed.

  FIG. 7B shows a state where cutting is started using the laser beam LB. As the laser beam LB, a third harmonic YAG laser beam is suitable, but other laser beams, for example, a second harmonic YAG laser beam, a fourth harmonic YAG laser beam, an excimer laser beam, and other harmonic ultraviolet rays are used. Laser light may be used. When the third harmonic YAG laser beam is used, the transparent crystal substrate 1 made of a 300 μm-thick sapphire wafer is cut without damaging the light emitting element wafer 10 under the conditions of a laser output of 6 W and a laser scanning speed of 2 mm / s. Thus, the light emitting element chip 4 can be obtained.

  Further, the laser beam LB is irradiated along the cut surface 11 passing through the cutting region 9. In order to make the light emitting element wafer 10 into chips for each light emitting element pattern 20 formed in a grid pattern on the light emitting element wafer 10, the laser light LB is scanned and irradiated in two orthogonal directions. The irradiation direction (beam direction) of the laser beam LB is not limited to the vertical direction with respect to the back surface of the light emitting element wafer 10, and oblique irradiation can also be performed (FIG. 8 described later).

  FIG. 7C shows a state in which the cutting groove 12 is formed in the transparent crystal substrate 1 after the cutting of the light emitting element wafer 10 is completed. The holding substrate 5 and the light emitting element wafer 10 are in contact with each other (through the resin 6) only in the light emitting element pattern 20 portion. That is, the cutting region 9 called a street portion or a scribe line provided for cutting around the light emitting element pattern 20 is not in contact with the surface of the holding substrate 5 and is opposed to each other through a space. Only. That is, there are no inclusions such as the resin 6 causing the generation of foreign matter in the irradiation region of the laser beam LB. Therefore, even if the holding substrate 5 is processed by the transmitted laser beam (usually difficult to process), the light emitting element wafer 10. Can be cut without impairing the function of the light-emitting element without causing damage to the surface of the light-emitting element. FIG. 7D shows a state in which the individual light emitting element chips 4 are separated from the holding substrate 5 by reducing the bonding force of the resin 6.

(Embodiment 5)
8A to 8E show the fifth embodiment. In the fifth embodiment, the irradiation direction (beam direction) of the laser beam LB in the above-described fourth embodiment is perpendicular to the back surface of the light emitting element wafer 10, whereas the laser beam LB is irradiated from an oblique direction. Therefore, as shown in FIGS. 8C and 8D, two cutting grooves 12 are formed between the adjacent light emitting element patterns 20 to form the cut pieces 13. Moreover, as shown in FIG.8 (e), the light emitting element chip 4 which removed the cut piece 13 and isolate | separated from the holding substrate 5 becomes trapezoid shape. The light emitting element chip 4 having such a shape can use the slope of the trapezoidal transparent crystal substrate 1 for light collection and light dispersion. When this inclined surface is used as the light reflecting surface, the light extraction efficiency from the light emitting element pattern 20 can be increased.

(Embodiment 6)
FIG. 9 shows a sixth embodiment. In the sixth embodiment, the method 3 using the press contact plate 7 is used as the fixing method, as in the third embodiment. In FIG. 9, the main steps in the cutting of the light emitting element wafer 10 fixed to the holding substrate 5 are shown by states S1 to S5 in time series from the upper side to the lower side of the figure. The state S1 is a state in which the light emitting element wafer 10 is disposed on the holding substrate 5 with the back surface facing up. The light emitting element patterns 20 formed in a grid pattern appear to be transmitted through the transparent crystal substrate 1. The gaps between the light emitting element patterns 20 arranged in a grid pattern are continuous in two orthogonal directions (X direction and Y direction), and these continuous gap areas constitute a cutting area. The pressure contact plate 7 includes a slit-shaped opening 71 corresponding to the cutting region.

  In the state S2, the pressure contact plate 7 is disposed on the back surface of the light emitting element wafer 10, and the light emitting element wafer 10 is pressed and fixed to the holding substrate 5 via the pressure contact plate 7 by using an urging means (not shown), and the laser beam LB. Is being cut by irradiating while scanning in the X direction (first cutting direction). When the press contact plate 7 is arranged, the opening direction of the slit-shaped opening 71 of the press contact plate 7 is matched with the X direction of the cutting region.

  State S3 is a state in which the cutting process in the X direction is completed. Cutting grooves 12 extending from the back surface (upper surface in the state of the drawing) to the front surface (lower surface in the state of the drawing) of the transparent crystal substrate 1 are formed in the cutting region in the X direction. In the state S4, the light emitting element wafer 10 is fixed to the holding substrate 5 by using the pressure contact plate 7 rotated by θ = 90 ° in the plane of the pressure contact plate 7, and this time along the Y direction (second cutting direction). The laser beam LB is being cut. State S5 is a state in which each light emitting unit is chipped after the cutting process in the X direction and the Y direction is completed.

(Embodiment 7)
FIG. 10 shows a seventh embodiment. As described above, when the cutting process is performed using the pressure contact plate 7 having the slit-shaped opening 71, the outer peripheral portion of the light emitting element wafer 10 is left as an unprocessed portion Q at the end of the cutting groove 12 without being cut. . As a result, the light emitting element wafer 10 can be prevented from falling apart when the pressure contact plate 7 is rotated by 90 °. Therefore, after the press contact plate 7 is rotated by 90 °, the press contact plate 7 and the light emitting element wafer 10 can be easily aligned and cut with high accuracy.

(Embodiment 8)
FIG. 11 shows an eighth embodiment. In the eighth embodiment, when the light emitting element wafer 10 is fixed to the holding substrate 5 using the pressure contact plate 7 as in the third and sixth embodiments, the back surface side (light emitting element wafer side) of the pressure contact plate 7 is used for bonding. The resin 73 is disposed. For example, an adhesive tape can be used as the resin 73. During the laser processing in the X direction, the press contact plate 7 and the light emitting element wafer 10 are bonded and fixed by the resin 73. After processing in the X direction, the bonding strength of the resin 73 is reduced, the pressure contact plate 7 and the light emitting element wafer 10 are separated, and the pressure contact plate 7 is rotated by 90 °. Thereafter, cutting in the Y direction is performed in the same manner as in the X direction, and the light emitting element wafer 10 is chipped for each light emitting element pattern 20.

(Embodiment 9)
FIG. 12 shows a ninth embodiment. In the ninth embodiment, a resin 73 whose bonding strength can be controlled by temperature is used as the bonding resin 73 for fixing the pressure contact plate 7 in the above-described eighth embodiment to the light emitting element wafer 10. Specific examples of the resin 73 include Intellimer tape manufactured by Landec, USA. The temperature control of the resin 73 is performed by heating the pressure contact plate 7. For example, the pressure contact plate 7 is provided with an electric resistor 74, and the bonding strength of the resin 73 is changed by heat generation when the electric resistor 74 is energized. For this reason, the pressure contact plate 7 is made of an insulating material such as glass, and an electric resistor 74 made of a heat-generating metal thin film is formed on the side in contact with the resin 73. Nichrome or the like is suitable as the metal thin film material.

(Embodiment 10)
FIG. 13 shows a tenth embodiment. In the tenth embodiment, a relief groove 51 is formed in a portion of the holding substrate 5 facing the light emitting element wafer 10 and irradiated with the laser beam LB. A relief groove 51 is formed in the front surface portion of the holding substrate 5 irradiated by the laser beam LB transmitted through the transparent crystal substrate 1 while the light emitting element wafer 10 is cut from the back surface (upper part of the drawing) or directly after the cutting. Form a concave shape. As a result, the position irradiated with the laser beam LB on the holding substrate 5 becomes the bottom of the escape groove 51 away from the focal point, and the intensity (energy density) of the laser beam LB at the irradiated position can be reduced. The surface of the is less likely to be damaged. Accordingly, it is possible to suppress damage to the light emitting element wafer 10 due to foreign matter or the like from the holding substrate 5.

(Embodiment 11)
FIG. 14 shows an eleventh embodiment. In the eleventh embodiment, the silicon oxide material 8 is disposed on the surface of the holding substrate 5 facing the light emitting element wafer 10, that is, the surface irradiated with the laser beam LB. In this case, the silicon oxide-based material 8 may be disposed on the entire surface of the holding substrate 5. The silicon oxide-based material 8 is generally not easily damaged by a laser beam, and suppresses damage to the holding substrate 5 by the laser beam LB transmitted through the transparent crystal substrate 1 during cutting or the laser beam LB directly flying after cutting, and thus a light emitting element The occurrence of damage to the wafer 10 can be reduced. Examples of the silicon oxide-based material 8 include HSQ resin (specifically, FoxFlowable Oxide manufactured by DOW CORNING). These materials are composed only of Si, O, and H, and do not contain carbides. Therefore, thermal damage and contamination due to laser processing are small. Note that the silicon oxide-based material 8 functions as an adhesive resin.

  The present invention is not limited to the above-described configuration, and various modifications can be made. For example, in the drawing referred to above, the light emitting element wafer 10 having a structure having a street portion in which the light emitting element pattern is not formed as the cutting region 9 is shown, but for the light emitting element wafer 10 in which the street portion is not formed. The present invention can also be applied. In the latter case, the predetermined region of the light emitting element pattern 20 is protected by contact with the holding substrate via some inclusions, and the region to be the cutting region 9 is not in contact with the holding substrate 5. Is preferred. This is because when there is a gap between the cutting region 9 and the holding substrate 5 when cutting from the back surface side of the light emitting element wafer 10, the influence of the surface of the holding substrate 5 can be reduced.

The perspective view of the light emitting element chip manufactured using the manufacturing method of the light emitting element which concerns on this invention, and the perspective view of a light emitting element wafer. The AA sectional view of the light emitting element chip in Drawing 1, and the sectional view of a light emitting element wafer. Process drawing of a manufacturing method same as the above. Sectional drawing of the light emitting element wafer and holding substrate which show Embodiment 1 of a manufacturing method same as the above. Sectional drawing of the light emitting element wafer and holding substrate which show Embodiment 2 of a manufacturing method same as the above. Sectional drawing of the light emitting element wafer and holding substrate which show Embodiment 3 of a manufacturing method same as the above. (A)-(d) is sectional drawing of the light emitting element wafer and holding substrate which show Embodiment 4 of a manufacturing method same as the above. (A)-(e) is sectional drawing of the light emitting element wafer and holding substrate which show Embodiment 5 of a manufacturing method same as the above. The perspective view of the light emitting element wafer which shows Embodiment 6 of a manufacturing method same as the above, a holding substrate, and a press-contacting plate. The top view of the light emitting element wafer which shows Embodiment 7 of a manufacturing method same as the above. Sectional drawing of the light emitting element wafer and holding substrate which shows Embodiment 8 of a manufacturing method same as the above. Sectional drawing of the light emitting element wafer and holding substrate which show Embodiment 9 of a manufacturing method same as the above. Sectional drawing of the light emitting element wafer and holding substrate which shows Embodiment 10 of a manufacturing method same as the above. Sectional drawing of the light emitting element wafer and holding substrate which show Embodiment 11 of a manufacturing method same as the above.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Transparent crystal substrate 2 Light emission part 3 Electrode 4 Light emitting element chip 5 Holding substrate 6 Resin 7 Pressure plate 8 Silicon oxide type material 9 Cutting area 10 Light emitting element wafer 20 Light emitting element pattern 21, 22 Semiconductor layer 50 Exhaust flow path 51 Escape groove 71 Slit-shaped opening 73 Resin 74 Electric resistor LB Laser beam Q Unprocessed part

Claims (6)

In a method for manufacturing a light-emitting element, a light-emitting element wafer in which a plurality of light-emitting element patterns each including a light-emitting portion and an electrode having a semiconductor layer laminated on a transparent crystal substrate are formed is cut for each light-emitting element pattern to obtain a light-emitting element chip.
A first step of disposing a resin in the light emitting element pattern portion and bonding the light emitting element wafer on a transparent holding substrate by the resin;
A second step of cutting the wafer into light emitting element patterns by irradiating the light emitting element wafer bonded to the holding substrate with laser light in a state where the resin portion is not irradiated with laser light. A method for manufacturing a light-emitting element. In a method for manufacturing a light-emitting element, a light-emitting element wafer in which a plurality of light-emitting element patterns each including a light-emitting portion and an electrode having a semiconductor layer laminated on a transparent crystal substrate are formed is cut for each light-emitting element pattern to obtain a light-emitting element chip.
An exhaust passage having an opening facing the light emitting element pattern surface provided on the holding substrate, wherein the light emitting element pattern surface is brought into contact with a transparent holding substrate surface and the light emitting element wafer is disposed on the holding substrate. A first step of vacuum-adsorbing the light emitting element pattern surface to the holding substrate by evacuating the inside to fix the light emitting element wafer on the holding substrate;
And a second step of irradiating the light emitting element wafer fixed to the holding substrate with a laser beam to cut the wafer for each light emitting element pattern. In a method for manufacturing a light-emitting element, a light-emitting element wafer in which a plurality of light-emitting element patterns each including a light-emitting portion and an electrode having a semiconductor layer laminated on a transparent crystal substrate are formed is cut for each light-emitting element pattern to obtain a light-emitting element chip.
Placing the light emitting element pattern surface light emitting element wafer in contact with the transparent support substrate surface to the holding substrate, pressure contact plate that have a slit-shaped opening facing the cutting region provided around the light emitting portion A first step of fixing the light emitting element wafer on the holding substrate by pressing the light emitting element wafer against the holding substrate using:
By irradiating the light emitting element wafer fixed to the holding substrate with laser light passing through the slit-shaped opening in a state where the direction of the slit-shaped opening is aligned with the direction of the first cutting, the wafer is subjected to the first cutting. Then, the laser beam passing through the slit-like opening is fixed to the holding substrate with the direction of the slit-like opening aligned with the second cutting direction by rotating the pressure contact plate by 90 °. A second step of irradiating the light emitting element wafer, cutting the wafer along a second cutting direction, and cutting the light emitting element wafer for each light emitting element pattern , and
In the first step, the pressure contact plate and the light emitting element wafer are bonded with resin,
By using a resin whose bonding strength can be controlled by temperature as the resin used for the bonding, the pressure contact plate is provided with an electric resistor, and the bonding strength of the resin is changed by heat generation when the electric resistor is energized. A method of manufacturing a light emitting element, comprising controlling a bonding strength between the light emitting element wafer and the pressure contact plate .   4. The light emitting device according to claim 1, wherein, in the second step, only an outer peripheral portion of the light emitting element pattern is cut to leave an unprocessed portion around the light emitting element wafer. 5. Device manufacturing method.   The said holding | maintenance board | substrate has an escape groove in the part which is the surface which opposes the said light emitting element wafer, and is irradiated with the said laser beam, The Claim 1 thru | or 3 characterized by the above-mentioned. Manufacturing method of light emitting element.   The method for manufacturing a light-emitting element according to claim 1, wherein a silicon oxide-based material is disposed on a surface of the holding substrate facing the light-emitting element wafer.

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