JP4382024B2 - Manufacturing method of chip resistor - Google Patents

Description

  The present invention relates to a chip resistor and a manufacturing method thereof.

  In a conventional method for manufacturing a small chip resistor, there is a method using an insulating substrate having split slits in a primary direction and a secondary direction on a front surface and a back surface (Patent Document 1). As a method for obtaining an insulating substrate having split slits in the primary and secondary directions on the front and back surfaces, a method of forming a slit with a laser on a solid insulating substrate in which no slit is formed is conventionally performed.

  On the other hand, as a method of forming the side electrode of the small chip resistor, when forming the side electrode by the sputtering method after stacking the strips after the primary division, a masking resist is used to prevent spattering of the protective film. The method of apply | coating is performed (patent document 1, patent document 2).

  In such a method of applying the masking resist, since the masking resist is applied by printing, there is a problem that the electrode pattern at the end of the side electrode cannot be linear.

As a method for solving the problem that the electrode pattern at the end of the side electrode cannot be linear, there is a method of forming a masking resist by a photolithography method (Patent Document 3). In this method, a positive resist is uniformly applied and then exposed and developed to form a masking resist, so that the electrode pattern at the end of the side electrode can be made linear.
JP 2002-231503 A JP 2004-128218 A JP-A-8-78217

  However, when the slit is formed by a laser in this way, there is a problem that a jetty is generated at the opening of the slit and a burr is formed. That is, when a slit is formed by laser scribing, a jetty portion U is formed as shown in FIG. 19, and the jetty portion becomes a burr when the substrate is divided along the slit. In particular, if the primary slit is formed by laser scribing after the bottom electrode is formed, the side electrode cannot be accurately formed by the burr due to the jetty, which becomes a factor that hinders the electrical connection between the side electrode and the bottom electrode. It was.

  In addition, in the case of a photolithographic method using a positive type resist as in the above-mentioned Patent Document 3, a clearer pattern can be formed than in the negative type, but since the exposed portion of the resist is removed during development, the primary slit is removed. Since the resist cannot be exposed up to this point, the resist remains, and if the resist is removed after the side electrode is formed, there is a problem that the side electrode is not formed in that portion. In particular, since the top electrode is formed so as to straddle the primary slit on the alumina substrate on which the primary slit is formed, when the top electrode is formed, the top electrode paste does not reach the ridges in the primary slit, resulting in a space. If the resist enters the space (especially, the resist may enter the space from the portion where the upper surface electrode is not formed in the primary slit and enter the space), it will be blocked by the upper surface electrode even if exposed. As a result, the resist remains. If the resist is peeled off after forming the metal thin film by sputtering, the remaining resist is peeled off and the side electrode is not partially formed.

  Therefore, the problem to be solved by the present invention is to provide a chip resistor manufacturing method capable of accurately forming the side electrodes in the manufacture of the chip resistor, and in particular, on the lower surface side of the substrate. Provided is a method of manufacturing a chip resistor capable of preventing the generation of burrs along the primary slit, and further prevents the generation of burrs along the primary slit on the lower surface side of the substrate, and at the time of forming the side electrode, An object of the present invention is to provide a method of manufacturing a chip resistor that can prevent problems in the case of using a resist and can accurately form a side electrode.

  The present invention was created to solve the above problems, and firstly, a chip resistor manufacturing method, which is a substrate body that is an element of an insulating substrate in a chip resistor, A lower electrode forming step of forming a lower electrode on the lower surface of the substrate body having at least the size of the insulating substrate; and a secondary slit formed by laser scribing without forming a primary slit on the lower surface of the substrate body. Forming a first slit and a secondary slit by laser scribing on the upper surface of the substrate body, and forming a resistor and an upper surface on the upper surface side of the substrate body. A forming member forming step for forming each forming member of the electrode and the protective film, a mask forming step for forming a mask on the upper surface side of the substrate body, and a plurality of strip-like substrates by dividing the substrate body along the primary slit A primary division step of forming a characterized by having a metal thin film forming step of forming a metal thin film for the side electrode against the strip-shaped substrate, and a resist removal step of removing the resist remaining.

  In this first configuration, only the secondary slit is formed on the lower surface of the substrate element body, and the primary slit is not formed. Therefore, no pier portion is formed on the primary side of the lower surface of the substrate element body. As a result, no burrs are generated on the primary side of the lower surface of the vessel, and the side electrodes can be accurately formed.

  Second, in the first configuration, in the mask forming step, a mask is formed using a negative type resist. Therefore, a negative resist is used to remove a portion that is not irradiated with light at the time of exposure, so that no resist residue is generated in the region where the side electrode is formed, and the side electrode can be formed satisfactorily.

  A third method of manufacturing a chip resistor is a substrate element that is an element of an insulating substrate in the chip resistor. The substrate element has at least a size corresponding to a plurality of the insulating substrates. A lower surface electrode forming step for forming a lower surface electrode on the lower surface, a lower surface side slit forming step for forming only a secondary slit by laser scribing without forming a primary slit on the lower surface of the substrate body, and an upper surface of the substrate body An upper surface side secondary slit forming step of forming a secondary slit by laser scribing, a forming member forming step of forming each of the forming members of the resistor, the upper surface electrode and the protective film on the upper surface side of the substrate body, and the substrate element A mask forming process for forming a mask on the upper surface side of the body, an upper surface side primary slit forming process for forming a primary slit by laser scribing from the upper surface side of the substrate body, and a primary slit on the substrate body. A primary dividing step of dividing the substrate into a plurality of strip-shaped substrates, a metal thin film forming step of forming a metal thin film for side electrodes on the strip-shaped substrate, and a resist removing step of removing the resist. It is characterized by having.

  In this third configuration, since only the secondary slit is formed on the lower surface of the substrate element body, and no primary slit is formed, no jetty is formed on the primary side of the lower surface of the substrate element body. As a result, no burrs are generated on the primary side of the lower surface of the vessel, and the side electrodes can be accurately formed.

  According to a fourth aspect of the present invention, in the third configuration, in the mask formation step, a mask is formed using a positive type resist. Therefore, although a positive type resist is used, since the primary slit is formed on the upper surface side of the substrate body before the primary division, no resist residue is generated and the side electrode can be formed satisfactorily. In other words, when the resist is applied, since the primary slit is not formed, the resist does not remain in the space of the primary slit, and even if the resist remaining after the metal thin film is formed is removed, the side electrode Is not partially formed, and the side electrode can be formed satisfactorily.

  According to a fifth aspect of the present invention, in any one of the first to fourth configurations, in the mask formation step, a mask is formed by a photolithography method.

  Sixth, in any one of the first to fifth configurations, the metal thin film is formed by a sputtering method in the metal thin film forming step.

  Seventhly, there is provided a method of manufacturing a chip resistor, wherein the substrate element is an element of an insulating substrate in the chip resistor, and the substrate element has at least a size corresponding to a plurality of the insulating substrates. A lower surface electrode forming step for forming a lower surface electrode on the lower surface, a lower surface side slit forming step for forming only a secondary slit by laser scribing without forming a primary slit on the lower surface of the substrate body, and an upper surface of the substrate body An upper surface side slit forming step of forming a primary slit and a secondary slit by laser scribing, and a forming member forming step of forming each of the forming members of the resistor, the upper surface electrode, and the protective film on the upper surface side of the substrate body, A mask forming process for forming a mask on the upper surface side of the substrate body, a mask forming process for forming a mask by a photolithography method using a negative type resist, and a primary slit for the substrate body A primary dividing step of dividing the substrate into a plurality of strip-shaped substrates, a metal thin film forming step of forming a metal thin film for side electrodes on the strip-shaped substrate by sputtering, and removing the remaining resist. And a resist removing step.

  In this seventh configuration, only the secondary slit is formed on the lower surface of the substrate element body, and the primary slit is not formed. Therefore, no pier portion is formed on the primary side of the lower surface of the substrate element body. As a result, no burrs are generated on the primary side of the lower surface of the vessel, and the side electrodes can be accurately formed. Also, in the mask formation process, a negative type resist is used to remove a portion that is not irradiated with light at the time of exposure, so that a resist residue does not occur in a region where the side electrode is formed, and the side electrode is formed satisfactorily. Can do.

  Eighth, a method for manufacturing a chip resistor is a substrate element that is an element of an insulating substrate in the chip resistor, and includes a substrate element having at least a size corresponding to a plurality of the insulating substrates. A lower surface electrode forming step for forming a lower surface electrode on the lower surface, a lower surface side slit forming step for forming only a secondary slit by laser scribing without forming a primary slit on the lower surface of the substrate body, and an upper surface of the substrate body An upper surface side secondary slit forming step of forming a secondary slit by laser scribing, a forming member forming step of forming each of the forming members of the resistor, the upper surface electrode and the protective film on the upper surface side of the substrate body, and the substrate element A mask forming step of forming a mask on the upper surface side of the body, a mask forming step of forming a mask by photolithography using a positive type resist, and a laser scrubbing from the upper surface side of the substrate body. A primary slit forming step for forming a primary slit by a groove, a primary dividing step for forming a plurality of strip-shaped substrates by dividing the substrate body along the primary slit, and a side surface by sputtering for the strip-shaped substrate. It has the metal thin film formation process which forms the metal thin film for electrodes, and the resist removal process which removes a resist, It is characterized by the above-mentioned.

  In the eighth configuration, since only the secondary slit is formed on the lower surface of the substrate element body and the primary slit is not formed, no jetty is formed on the primary side of the lower surface of the substrate element body. As a result, no burrs are generated on the primary side of the lower surface of the vessel, and the side electrodes can be accurately formed. In the mask formation process, a positive type resist is used. However, since the primary slit is formed on the upper surface side of the substrate body before the primary division, no resist residue is generated and the side electrodes can be formed satisfactorily. it can. In other words, when the resist is applied, since the primary slit is not formed, the resist does not remain in the space of the primary slit, and even if the resist remaining after the metal thin film is formed is removed, the side electrode Is not partially formed, and the side electrode can be formed satisfactorily.

  The ninth configuration may be the following configuration. That is, in any one of the first to eighth configurations, the primary slit is formed deeper than the secondary slit on the upper surface side of the substrate body. Therefore, since the primary slit is not formed on the lower surface side of the substrate body, the primary division can be favorably performed by deepening the primary slit on the upper surface side of the substrate body.

  Further, the following configuration may be adopted as the tenth configuration. That is, a method for manufacturing a chip resistor, which is a substrate element that is an element of an insulating substrate in a chip resistor, and a lower electrode is provided on the lower surface of the substrate element having at least a size corresponding to a plurality of the insulating substrates. The lower surface electrode forming step to be formed, the lower surface side slit forming step in which only the secondary slit is formed by laser scribe without forming the primary slit on the lower surface of the substrate body, and the primary surface by laser scribe on the upper surface of the substrate body. Upper surface side slit forming step for forming slits and secondary slits, a resistor forming step for forming resistors on the upper surface of the substrate body, and upper surface electrode formation for forming upper surface electrodes so as to partially overlap the resistors A negative type resist is used in the process, the protective film forming process for forming a protective film for protecting the resistor, and the mask forming process for forming a mask on the upper surface side of the substrate body. A mask forming process for forming a mask by photolithography, a primary dividing process for forming a plurality of strip-shaped substrates by dividing the substrate body along the primary slit, and a method for side electrodes by sputtering on the strip-shaped substrates. A metal thin film forming process for forming a metal thin film, a secondary dividing process for dividing the strip-shaped substrate along the secondary slit to form individual chip pieces, and a resist removal for removing the resist remaining on the chip pieces A chip resistor manufacturing method comprising a step and a plating step of plating a chip piece.

  In the tenth configuration, since only the secondary slit is formed on the lower surface of the substrate element body and the primary slit is not formed, no jetty is formed on the primary side of the lower surface of the substrate element body. As a result, no burrs are generated on the primary side of the lower surface of the vessel, and the side electrodes can be accurately formed. Also, in the mask formation process, a negative type resist is used to remove a portion that is not irradiated with light at the time of exposure, so that a resist residue does not occur in a region where the side electrode is formed, and the side electrode is formed satisfactorily. Can do.

  As an eleventh configuration, in the second, seventh, or tenth configuration, the mask forming step includes a resist forming step of applying a negative type resist to the upper surface side of the substrate body, and an upper surface of the substrate body. It may have an exposure step of covering and exposing the side electrode forming region on the side, and a development step of removing a portion of the resist that is not irradiated with light by development.

  Moreover, it is good also as the following structures as a 12th structure. That is, a method for manufacturing a chip resistor, which is a substrate element that is an element of an insulating substrate in a chip resistor, and a lower electrode is provided on the lower surface of the substrate element having at least a size corresponding to a plurality of the insulating substrates. A lower surface electrode forming step to be formed, a lower surface side slit forming step in which only a secondary slit is formed by laser scribing without forming a primary slit on the lower surface of the substrate body, and a laser scribing on the upper surface of the substrate body. An upper surface side secondary slit forming step for forming the next slit, a resistor forming step for forming a resistor on the upper surface of the substrate body, and an upper electrode forming step for forming the upper electrode so as to partially overlap the resistor. In the protective film forming step of forming a protective film for protecting the resistor and the mask forming step of forming a mask on the upper surface side of the substrate body, photolithography is performed using a positive resist. A mask forming step for forming a mask by a step, a top side primary slit forming step for forming a primary slit by laser scribing from the upper surface side of the substrate body, and a plurality of strip-shaped substrates by dividing the substrate body along the primary slit Forming a metal thin film for a side electrode by sputtering on a strip-shaped substrate, and dividing the strip-shaped substrate along the secondary slits to form individual chip pieces. A chip resistor manufacturing method comprising: a secondary dividing step to be formed; a resist removing step of removing a resist remaining on the chip piece; and a plating step of plating the chip piece.

  Further, as a thirteenth configuration, in the fourth, eighth, or twelfth configuration, the mask forming step includes a resist forming step of applying a positive type resist to the upper surface side of the substrate body, and an upper surface of the substrate body. It may have an exposure step of covering and exposing a region other than the side electrode forming region on the side, and a development step of removing a portion irradiated with light in the resist by development.

  According to the chip resistor manufacturing method according to the present invention, only the secondary slit is formed on the lower surface of the substrate element body, and the primary slit is not formed. Therefore, there is a jetty on the primary side of the lower surface of the substrate element body. Since it is not formed, burrs do not occur on the primary side of the lower surface of the chip resistor, and the side electrode can be formed accurately.

  In the present invention, the object of providing a manufacturing method of a chip resistor capable of accurately forming a side electrode in manufacturing a chip resistor is realized as follows.

  That is, as shown in FIG. 1, the chip resistor A1 in the embodiment according to the present invention includes an insulating substrate 10, a resistor (may be referred to as “resistor layer”) (functional element) 12, and an upper electrode ( It includes a “upper surface electrode layer” 14, a protective film (also referred to as a “protective layer”) 20, a lower surface electrode 22, a side electrode 24, and a plating 26.

  Here, the chip resistor A1 will be described in more detail. The insulating substrate 10 is an insulator formed of alumina having a content rate of about 96%. The insulating substrate 10 has a rectangular parallelepiped shape, and has a substantially rectangular shape in plan view. The insulating substrate 10 is used as a base member of the chip resistor A1, that is, a base.

  Since slits are formed in the insulating substrate 10 by laser scribing, notches formed by dividing the slit formed by laser scribing are formed at the corners of the insulating substrate 10. . That is, in the present invention, since the primary slit and the secondary slit are formed on the upper surface side of the insulating substrate and only the secondary slit is formed on the back surface side, in the cross-sectional view shown in FIG. A notch is formed at a corner on the upper surface side of the insulating substrate 10. Further, since the secondary slit is formed on both the upper surface side and the lower surface side, cutout portions are formed on the upper surface side and the lower surface side on the side surface on the Y1 side and the side surface on the Y2 side in FIG. In addition, since the depth of the primary slit is formed deeper than the depth of the secondary slit on the upper surface side of the insulating substrate, the cutout portion on the upper surface side of the insulating substrate 10 is also deeper on the primary slit side.

  The resistor 12 is provided on the upper surface of the insulating substrate 10 as shown in FIG. That is, the resistor 12 is formed in a strip shape in the longitudinal direction (inter-electrode direction or energization direction) (X1-X2 direction (see FIG. 1)), specifically, on the X1 side of the insulating substrate 10. It is formed in a strip shape from the end to the end on the X2 side. Specifically, the resistor 12 is a ruthenium oxide thick film (for example, a ruthenium oxide metal glaze thick film). The resistor 12 is a functional element that bears electrical characteristics as the chip resistor A1.

  Further, as shown in FIG. 1, a pair of upper surface electrodes 14 is mainly formed at both end regions in the longitudinal direction (X1-X2 direction (see FIG. 1)) of the upper surface of the resistor 12. That is, the upper surface electrode 14 is formed to have a predetermined length from the end portion on the X1 side of the upper surface of the resistor 12, and the upper surface electrode 14 has a predetermined length from the end portion on the X2 side of the upper surface of the resistor 12. Is formed. Specifically, the upper surface electrode 14 is formed of a silver-based thick film (silver-palladium-based metal glaze thick film). Further, the Y1-Y2 direction of the upper surface electrode 14 (this Y1-Y2 direction is a direction perpendicular to the X1-X2 direction and the Z1-Z2 direction. The Z1-Z2 direction is the X1-X2 direction and the Y1-Y2 direction. The width of the resistor 12 is slightly larger than the width of the resistor 12 in the Y1-Y2 direction, and is smaller than the width of the insulating substrate 10 in the Y1-Y2 direction. Thereby, the upper surface electrode 14 is basically formed by being laminated on the upper surface of the resistor 12, but a part of the upper surface electrode 14 (that is, both sides in the width direction (Y1-Y2 direction)) is formed on the insulating substrate 10. It is laminated on the upper surface of. Note that the width of the upper surface electrode 14 in the Y1-Y2 direction may be the same as the width of the resistor 12 in the Y1-Y2 direction.

  Further, as shown in FIG. 1, the protective film 20 is mainly disposed so as to cover a part of the upper surfaces of the resistor 12 and the upper surface electrode 14. That is, the arrangement position of the protective film 20 will be described in more detail. As shown in FIG. 2, the protective film 20 is formed in the Y1-Y2 direction so as to be substantially the same as the width of the insulating substrate 10 (may be the same). In the X1-X2 direction, the exposed portion of the resistor 12 and a part of the pair of upper surface electrodes 14 formed at both ends are provided. That is, the protective film 20 is provided in a region shown by hatching in FIG. 2 (that is, hatching from the upper left to the lower right). The protective film 20 is made of resin (epoxy, phenol, silicon, etc.). In addition, you may form with a borosilicate glass.

  Further, as shown in FIG. 1, a pair of lower surface electrodes 22 are formed in both end regions in the longitudinal direction (X1-X2 direction (see FIG. 1)) of the lower surface of the insulating substrate 10. That is, the lower surface electrode 22 is formed to have a predetermined length from the end portion on the X1 side of the lower surface of the insulating substrate 10, and the lower surface electrode 22 is formed to have a predetermined length from the end portion on the X2 side of the lower surface of the insulating substrate 10. Is formed. Note that the width of the bottom electrode 22 in the Y1-Y2 direction is substantially the same (or may be the same) as the width of the insulating substrate 10 in the Y1-Y2 direction. That is, the lower surface electrode 22 is provided in a region shown by hatching in FIG. 3 (that is, hatching from the upper left to the lower right). The lower surface electrode 22 is formed of a gold-based thin film. Note that the lower electrode 22 may be formed of a silver-based thick film (for example, a silver-based metal glaze thick film).

  Further, the side electrode 24 is formed in a layer shape with a substantially U-shaped cross section so as to cover a part of the upper surface electrode 14, a part of the lower surface electrode 22, and a part of the side surface and the lower surface of the insulating substrate 10. . The side electrodes 24 are provided at the end on the X1 side and the end on the X2 side, respectively. The side electrode 24 is formed of a thin film. The upper surface portion of the side electrode 24 is provided in a region shown by hatching (that is, hatching from the upper right to the lower left direction) in FIG. 2, and the lower surface portion of the side electrode 24 is hatched (that is, in FIG. 3). (Hatching from upper right to lower left). The side electrode 24 is specifically formed of a metal thin film.

  The plating 26 includes a nickel plating 28 and a tin plating 30, and is provided at an end portion on the X1 side and an end portion on the X2 side, respectively. The nickel plating 28 is formed so as to cover part of the protective layer 20, part of the upper surface electrode 14, side electrode 24, and part of the lower surface electrode 22. That is, the exposed portions of the upper surface electrode 14, the side surface electrode 24, and the lower surface electrode 22 are formed to be covered. The nickel plating 28 is disposed with a substantially uniform film thickness by electroplating. The nickel plating 28 is made of nickel and is formed to prevent solder erosion of internal electrodes such as the upper surface electrode 14. In addition to nickel, the nickel plating 28 may be copper plating.

  Further, the tin plating 30 is disposed with a substantially uniform film thickness so as to cover the upper surface of the nickel plating 28. The tin plating 30 is formed in order to satisfactorily solder the chip resistor A1 to the wiring board. In addition, this tin plating 30 may use solder other than tin plating.

  The upper surface electrode 14, the lower surface electrode 22, the side surface electrode 24, and the plating 26 form an electrode portion 40. A portion of the electrode portion 40 located on the lower surface side of the insulating substrate 10 is a lower surface side electrode. Part 42.

  In the above configuration, a cover coat may be provided between the protective film 20 and the resistor 12. That is, a cover coat may be provided so as to cover the exposed portion of the resistor 12. The cover coat is formed to reduce thermal shock during trimming of the resistor to prevent microcracks at the tip of the trimming groove, and is formed of glass, specifically, a borosilicate glass-based thick film.

  FIG. 2 is a diagram showing the arrangement of each part when the chip resistor A1 is viewed from the upper surface side. When the resistor 12, the upper surface electrode 14, the protective film 20, and the side electrode 24 are viewed in plan, The outline of the outer shell is illustrated. In addition, each part is expressed similarly including the part which is actually hidden and cannot be seen. Similarly, FIG. 3 is a diagram showing the arrangement of each part when the chip resistor A1 is viewed from the lower surface side, and illustrates the outermost contour when the lower surface electrode 22 and the side electrode 24 are viewed in plan. It is. In addition, each part is expressed similarly including the part which is actually hidden and cannot be seen.

  A manufacturing method of the chip resistor A1 having the above configuration will be described with reference to FIGS. First, a solid alumina substrate having no primary slit or secondary slit (this alumina substrate is a large one having at least the size of an insulating substrate of a plurality of chip resistors) (substrate body) 5 The lower electrode G22 is prepared and formed on the lower surface (which may be the rear surface or the bottom surface) of the alumina substrate 5 (see S11 in FIG. 4, W1 in FIG. 5, lower electrode formation step). That is, the gold resinate paste for the lower surface electrode is printed and dried and fired (fired at 840 to 860 ° C. (preferably 850 ° C.)). As shown in FIG. 5, in forming the lower surface electrode, the lower surface electrode G22 is formed simultaneously for the adjacent chip resistors. That is, the area of the alumina substrate corresponding to the two chip resistors adjacent to the X direction (the X direction is the direction of the secondary slit) is 1 so as to straddle the position that becomes the boundary position (that is, the primary slit). A bottom electrode is formed in one printing area. Furthermore, in the Y direction (this Y direction is the direction of the primary slit and is the direction perpendicular to the X direction), a bottom electrode is continuously formed in a strip shape. That is, a plurality of chip resistors are collectively formed in the Y direction to form the bottom electrode in a series of strips, and two bottom electrodes adjacent to the X direction are formed together. It can be said that the lower surface electrode G22 is a plurality of lower surface electrodes 22. In addition, W1 of FIG. 5 is a figure which shows the state which looked at the alumina substrate from the lower surface side.

  Next, a secondary slit is formed on the lower surface of the alumina substrate 5 by laser scribing (see S12 in FIG. 4, W2 in FIG. 5, lower slit forming step). That is, a plurality of secondary slits are formed in a groove shape in the X direction. In this case, since the groove-shaped slit is formed on the lower surface of the alumina substrate 5, the lower surface electrode G22 is naturally cut when the secondary slit is formed. In step S12, only the secondary slit is formed, and the primary slit is not formed. The secondary slit formed in the lower surface of the alumina substrate 5 has a normal depth. In addition, the two-dot chain line in W2 of FIG. 5 shows the position corresponding to the primary slit J1 formed in the surface by the side of the alumina substrate 5 virtually.

  Next, the primary slit J1 and the secondary slit J2 are formed by laser scribing on the front side surface (that is, the upper surface) of the alumina substrate 5 (see S13 in FIG. 4, W3 in FIG. 6, upper surface side slit forming step). That is, a plurality of primary slits J1 are formed in a groove shape in the Y direction, and a plurality of secondary slits J2 are formed in a groove shape in the X direction. The secondary slit J2 is naturally formed at a position corresponding to the secondary slit J2 formed on the lower surface. Of course, the primary slit J1 is formed at a boundary position with a chip resistor adjacent in the X direction when divided into a plurality of chip resistors. As for the primary slit J1 and the secondary slit J2 formed on the front side of the alumina substrate 5, the secondary slit J2 has a normal depth, but the depth of the primary slit J1 is deeper than the depth of the secondary slit J2. Form. That is, since the primary slit is not formed on the lower surface of the alumina substrate 5, the primary slit J1 is formed deeper than the secondary slit J2 so that the alumina substrate 5 can be easily divided along the primary slit.

  Next, a resistor is formed on the front surface (that is, the upper surface) of the alumina substrate (see S14 in FIG. 4, W4 in FIG. 6, resistor forming step). That is, after the resistor paste is printed, the resistor G12 is formed by drying and baking (baking by 840 to 860 ° C. (preferably 850 ° C.)). The resistor paste is a ruthenium oxide paste (for example, a ruthenium oxide metal glaze paste). The resistor G12 is a resistor corresponding to a plurality of resistors 12 in the X direction. When the resistor paste is printed, the resistor paste is continuously formed in a strip shape in the X direction (the direction between the top electrodes) on the alumina substrate. Print. That is, in the alumina substrate, a series of regions of the insulating substrate 10 that are continuous in the X direction when finally becoming individual chip resistors (this is referred to as an “aggregate region”. In this case, the resistor paste is printed in a single band from one end to the other end of the aggregate region. That is, the resistor paste is printed in a series of strips together in a plurality of chip resistors in the X direction. In the Y direction, the resistor paste is formed to have a width smaller than the width of the insulating substrate 10 in the Y direction. In addition, as shown to W4 of FIG. 6, in the position of the primary slit J1, it is preferable to provide a notch part in the resistor so that the resistor paste does not flow as much as possible on the secondary slit J2 side. In this way, it may be simply formed in a strip shape without providing the notch. In FIG. 6, the resistor G12 is hatched for easy viewing. FIGS. 6, 7, and 8 are views showing a state in which the alumina substrate is viewed from the upper surface side.

  In forming the resistor, in the above description, the resistor G12 is continuously formed in a strip shape. However, as shown in the state of W4 ′ in FIG. 18, the resistor is rectangular for each chip resistor. You may make it form in a shape. That is, the length of the resistor in the X direction is shorter than the distance between the primary slits J1, so that the resistor does not reach the primary slit. In that case, naturally, the end portion of the resistor in the X direction does not reach the end portion of the insulating substrate 10 in the X direction.

  Next, an upper surface electrode (electrode) G14 is formed on the resistor G12 (see S15 in FIG. 4, W5 in FIG. 6, upper surface electrode forming step). That is, the upper surface electrode is formed in the end region of the region that becomes the resistor 12 when individual chip resistors are formed. That is, the upper surface electrode paste is printed and dried and fired (fired at 840 to 860 ° C. (preferably 850 ° C.)). The upper surface electrode paste in this case is a silver palladium-based metal glaze paste. In addition, you may form with a silver-type paste (for example, silver-type metal glaze paste). In FIG. 6, the upper surface electrode G14 is an upper surface electrode corresponding to two of the upper surface electrodes 14 in the chip resistor A1. That is, when the chip resistor is formed, the upper surface electrodes of the adjacent chip resistors adjacent to each other are formed by one printing region. The top electrode G14 is formed slightly larger than the width of the resistor G12 in the Y direction.

  Next, the resistance value is adjusted by trimming the resistor G12 (see S16 in FIG. 4 and W6 in FIG. 7). That is, a trimming groove is formed in the resistor G12 by laser trimming.

  Next, the protective film G20 is formed so as to cover the exposed portion of the resistor G12 (see S17 in FIG. 4, W7 in FIG. 7, protective film forming step). That is, the resin paste is printed in a strip shape in the Y direction and dried and cured (cured at 190 to 210 ° C. (preferably 200 ° C.)). That is, a protective film is formed in a series of strips together in the Y direction for a plurality of chip resistors. Note that the protective film G20 is slightly larger than the width of the exposed portion of the resistor G12 in the X direction. It can be said that the protective film G20 corresponds to a plurality of protective films 20.

  When forming a cover coat, the cover coat is formed before forming the protective film G20. That is, a lead borosilicate glass-based glass paste is printed in a strip shape in the Y direction and dried and fired (fired at 590 to 610 ° C. (preferably 600 ° C.)). That is, in the Y direction, the cover coat is formed in a series of strips together for a plurality of chip resistors. In the X direction, the width is slightly larger than the width of the exposed portion of the resistor G12. It can be said that the cover coat formed in this way is a plurality of cover coats in each chip resistor.

  In addition, said step S14-S17 corresponds to the said formation member formation process as a whole. That is, the formed resistor, upper surface electrode, protective film, and the like hit the forming member.

  After the protective film G20 is formed, a negative type resist 50 is then applied (see S18 in FIG. 4 and W8 in FIG. 7). That is, the negative type resist 50 is applied to the entire front surface of the alumina substrate 5.

  Next, after drying the applied resist (S19 in FIG. 4), exposure is performed (see S20 in FIG. 4, W9 in FIG. 8, and W9 in FIG. 9). That is, exposure is performed using the photomask 60. In this photomask 60, a thin film 64 made of chromium is formed on the lower surface of a transparent glass 62. As shown in FIG. 8, this thin film 64 has a strip shape (specifically, an elongated rectangular shape) in the Y direction. Are provided in parallel with each other, and are provided above the region where the side electrode is to be formed in each chip resistor. That is, the upper surface side of the side electrode is formed in the region masked by the thin film 64 in plan view. That is, in the plan view, the thin film 64 is disposed in the region between the protective films G20 above the region excluding a part of both sides. After the photomask 60 is placed at the above position, exposure is performed. By performing the exposure, only the portion irradiated with light in the resist 50 is cured. In W9 of FIG. 8, the glass 62 actually exists in plan view, but the glass 62 is omitted and only the position of the thin film 64 is shown.

  Next, development is performed (S21 in FIG. 4, W10 in FIG. 8, W10 in FIG. 9). That is, in the resist 50, light is not irradiated by exposure and an uncured part is dissolved and removed with a chemical. Then, as shown in W10 of FIG. 8 and W10 of FIG. 9, the resist in the region covered with the thin film 64 of the photomask 60 is removed.

  As described above, a mask is formed by photolithography using a negative resist. That is, as shown in W10 of FIG. 8 and W10 of FIG. 9, a mask is formed by the resist 50 remaining after development. The steps S18 to S21 correspond to the mask forming process.

  Next, primary division is performed along the primary slit J1 (see S22 in FIG. 4, primary division step). In this division, for example, the alumina substrate is divided with the lower surface side as a base point. That is, a strip-shaped substrate formed by linearly arranging the alumina substrate portions for one chip resistor is bent downward from the upper surface side so as to be bent with respect to the adjacent strip-shaped substrate.

  Next, a metal thin film is formed on the strip-shaped substrate (see S23 in FIG. 4, FIG. 10, and FIG. 11, a metal thin film forming step). In other words, the strip-shaped substrates that are primarily divided are stacked as shown in FIG. 10, and a metal thin film is formed by sputtering. This metal thin film is formed to form side electrodes. The state in which the metal thin film is formed is as shown in FIG. 11, and the metal thin film G24 is also formed on the resist surface, but the region where the side electrode is not formed on the lower surface of each strip substrate is laminated with strip substrates. Thus, the metal thin film G24 is not formed because it is protected by the resist. In FIG. 10 and FIG. 11, reference numeral 5 'denotes a primary divided alumina substrate.

  Next, secondary chip division is performed along the secondary slit J2 to form individual chip pieces (see S24 in FIG. 4, secondary division process). Then, the resist remaining on the chip piece is peeled off by chemicals (S25 in FIG. 4, resist removing step). That is, the resist remaining on the upper surface of the protective film 20 is mainly peeled off by chemicals. Thereafter, the chip piece is plated (plating step) to form a chip resistor (see S26 in FIG. 4).

  As described above, in the manufacturing method of the chip resistor of the present embodiment, only the secondary slit is formed on the lower surface side of the alumina substrate 5 and the primary slit is not formed. No burrs are generated at the primary end of the lower surface of the insulating substrate 10 in the container A1. Further, although the primary slit is not formed on the lower surface of the alumina substrate 5, the primary slit on the upper surface of the alumina substrate 5 is formed deeper than usual, so that the primary division can be performed satisfactorily.

  Also, when forming the side electrode, a negative resist is used to remove the portion that is not irradiated with light during exposure, so that no resist residue is generated in the region where the side electrode is formed, and the side electrode can be formed satisfactorily. Can do. In other words, since the portion that is not irradiated with light is removed during exposure, when the top electrode paste does not reach the ridge in the primary slit and a space is created, even if the resist enters the space, the resist is removed during development. The resist residue does not occur, and even if the resist remaining after the metal thin film is formed is removed, the side electrode is not partially formed, and the side electrode can be formed satisfactorily.

  As described above, in the method of manufacturing the chip resistor according to the present embodiment, it is possible to satisfactorily form the side electrodes when manufacturing the chip resistor.

  Next, Example 2 will be described. The chip resistor of the second embodiment has the same configuration as that of the first embodiment in a completed state, but the manufacturing method is different.

  That is, the chip resistor A2 in the second embodiment has the same configuration as the chip resistor A1 in the first embodiment, and the insulating substrate 10, the resistor 12, the upper surface electrode 14, the protective film 20, and the lower surface electrode. 22, side electrode 24, and plating 26. Since the structure of each member which comprises chip resistor A2 is the same as that of the case of Example 1, detailed description is abbreviate | omitted.

  Next, a manufacturing method of the chip resistor A2 having the above configuration will be described with reference to FIGS. The second embodiment is different from the first embodiment in that a positive type resist is used when forming the side surface electrodes, and that the time when the primary slit is formed on the surface side of the alumina substrate is immediately before the primary division. .

  That is, first, a solid alumina substrate (this alumina substrate is a large one having at least the size of an insulating substrate of a plurality of chip resistors) without a primary slit or a secondary slit is prepared, A lower electrode G22 is formed on the lower surface of the alumina substrate 5 (see S31 in FIG. 12, W11 in FIG. 13, lower electrode forming step). Since the configuration of step S31 is the same as that of step S11 in the first embodiment, detailed description thereof is omitted.

  Next, a secondary slit is formed on the lower surface of the alumina substrate 5 by laser scribing (see S32 in FIG. 12, W12 in FIG. 13). That is, a plurality of secondary slits are formed in a groove shape in the X direction. In this case, since the groove-shaped slit is formed on the lower surface of the alumina substrate 5, the lower surface electrode G22 is naturally cut when the secondary slit is formed. In step S32, only the secondary slit is formed, and the primary slit is not formed. The secondary slit formed in the lower surface of the alumina substrate 5 has a normal depth. A two-dot chain line in W12 in FIG. 13 virtually indicates a position corresponding to the primary slit J1 formed on the front surface of the alumina substrate 5.

  Next, the secondary slit J2 is formed by laser scribing on the front side surface (that is, the upper surface) of the alumina substrate 5 (S33 in FIG. 12, W13 in FIG. 14, upper surface side secondary slit forming step). That is, a plurality of secondary slits J2 are formed in a groove shape in the X direction. The secondary slit J2 is naturally formed at a position corresponding to the secondary slit J2 formed on the lower surface. In step S33, no primary slit is formed on the surface of the alumina substrate 5 on the front side. Note that the two-dot chain line in W13 of FIG. 14 virtually indicates the position of the primary slit J1 formed in step S42 on the front surface of the alumina substrate 5.

  Next, a resistor is formed on the front surface (that is, the upper surface) of the alumina substrate (see S34 in FIG. 12, W14 in FIG. 14, resistor forming step). That is, after the resistor paste is printed, the resistor G12 is formed by drying and baking. Since step S34 is the same as step S14 in the first embodiment, detailed description thereof is omitted. As in the first embodiment, the resistors G12 may be formed in a rectangular shape for each chip resistor instead of forming the resistors G12 in a series of strips (see FIG. 18). However, unlike FIG. 18, the primary slit J1 is not formed at this stage.

  Next, an upper surface electrode (electrode) G14 is formed on the resistor G12 (see S35 in FIG. 12, W15 in FIG. 14, upper surface electrode forming step). That is, the upper surface electrode is formed in the end region of the region that becomes the resistor 12 when individual chip resistors are formed. That is, the top electrode paste is printed, dried and fired. Since step S35 is the same as step S15 in the first embodiment, detailed description thereof is omitted.

  Next, the resistance value is adjusted by trimming the resistor G12 (see S36 in FIG. 12, W16 in FIG. 15). That is, a trimming groove is formed in the resistor G12 by laser trimming.

  Next, a protective film G20 is formed so as to cover the exposed portion of the resistor G12 (see S37 in FIG. 12, W17 in FIG. 15, protective film forming step). That is, the resin paste is printed in a strip shape in the Y direction, and dried and cured. Since step S37 is the same as step S17 in the first embodiment, detailed description thereof is omitted. In the case where the cover coat is formed, the point that the cover coat is formed before the formation of the protective film G20 is the same as that in the first embodiment.

  Note that steps S34 to S37 correspond to the forming member forming step as a whole. That is, the formed resistor, upper surface electrode, protective film, and the like hit the forming member.

  After the protective film G20 is formed, a positive type resist 70 is then applied (see S38 in FIG. 12, W18 in FIG. 15). That is, the positive type resist 70 is applied to the entire front surface of the alumina substrate 5.

  Next, the applied resist 70 is dried (S39 in FIG. 12), and the resist 70 is cured.

  Next, exposure is performed (see S40 in FIG. 12, W19 in FIG. 16, and W19 in FIG. 17). That is, as shown in FIGS. 16 and 17, exposure is performed using a photomask 80. In this photomask 80, a thin film 84 made of chromium is formed on the lower surface of a transparent glass 82. As shown in FIG. 16, this thin film 84 has a strip shape (specifically, an elongated rectangular shape) in the Y direction. Are provided in parallel with each other and above the region other than the region where the side electrode is to be formed in each chip resistor. That is, the upper surface side of the side electrode is formed in a region other than the region masked by the thin film 84 in plan view. That is, the thin film 84 is disposed above the region other than the region excluding a part on both sides in the region between the protective films G20 in plan view. After the photomask 80 is placed at the above position, exposure is performed. In W19 of FIG. 16, the glass 82 is actually present in plan view, but the glass 82 is omitted and only the position of the thin film 84 is shown.

  Next, development is performed (S41 in FIG. 12, W20 in FIG. 16, W20 in FIG. 17). That is, the portion of the resist 70 irradiated with light by exposure is dissolved and removed with a chemical. Then, as shown in W20 of FIG. 16 and W20 of FIG. 17, the resist in the region other than the region covered with the thin film 84 of the photomask 80 is removed.

  As described above, a mask is formed by photolithography using a positive type resist. That is, as shown in W20 of FIG. 16 and W20 of FIG. 17, a mask is formed by the resist 70 remaining after development. The steps S38 to S41 correspond to the mask forming process.

  Next, the primary slit J1 is formed by laser scribing from the surface side of the alumina substrate 5 (S42 in FIG. 12, W21 in FIG. 16, W21 in FIG. 17, upper surface side primary slit forming step). That is, a plurality of primary slits J1 are formed in a groove shape in the Y direction. That is, when dividing into a plurality of chip resistors, the primary slit J1 is formed at the boundary position with the chip resistors adjacent in the X direction. As for the primary slit J1 and the secondary slit J2 formed on the front side of the alumina substrate 5, the secondary slit J2 has a normal depth, but the depth of the primary slit J1 is deeper than the depth of the secondary slit J2. Form. That is, since the primary slit is not formed on the lower surface of the alumina substrate 5, the primary slit J1 is formed deeper than the secondary slit J2 so that the alumina substrate 5 can be easily divided along the primary slit.

  Next, primary division is performed along the primary slit J1 (see S43 in FIG. 12, primary division step). In this division, for example, the alumina substrate is divided with the lower surface side as a base point. That is, a strip-shaped substrate formed by linearly arranging the alumina substrate portions for one chip resistor is bent downward from the upper surface side so as to be bent with respect to the adjacent strip-shaped substrate.

  Next, a metal thin film is formed on the strip substrate (see S44 in FIG. 12, FIG. 10, FIG. 11, a metal thin film forming step). In other words, the strip-shaped substrates that are primarily divided are stacked as shown in FIG. 10, and a metal thin film is formed by sputtering. This metal thin film is formed to form side electrodes. The state in which the metal thin film is formed is as shown in FIG. 11, and the metal thin film G24 is also formed on the resist surface, but the region where the side electrode is not formed on the lower surface of each strip substrate is laminated with strip substrates. Thus, the metal thin film G24 is not formed because it is protected by the resist.

  Next, secondary chip division is performed along the secondary slit J2 to form individual chip pieces (see S45 in FIG. 12, secondary division process). Then, the resist remaining on the chip piece is peeled off by a chemical (S46 in FIG. 12, resist removing step). That is, the resist remaining on the upper surface of the protective film 20 is mainly peeled off by chemicals. Thereafter, the chip piece is plated (plating step) to obtain a chip resistor (see S47 in FIG. 12).

  As described above, in the chip resistor manufacturing method of the present embodiment, only the secondary slit is formed on the lower surface side of the alumina substrate 5, and the primary slit is not formed. No burrs are generated at the primary end of the lower surface of the insulating substrate 10 in the resistor A2. Further, although the primary slit is not formed on the lower surface of the alumina substrate 5, the primary slit on the upper surface of the alumina substrate 5 is formed deeper than usual, so that the primary division can be performed satisfactorily.

  In addition, a positive type resist is used when forming the side electrode. However, since the primary slit is formed on the surface side of the alumina substrate 5 before the primary division, no resist residue is generated and the side electrode can be formed satisfactorily. it can. In other words, in the case of the photolithography method using a conventional positive type resist, the upper surface electrode is formed so as to straddle the primary slit on the alumina substrate on which the primary slit is formed. If the top electrode paste does not reach the wall and a space is formed, if the resist enters the space, even if it is exposed, the top electrode is shielded and not exposed, resulting in the resist remaining. In the case of this example, when the resist is applied, since the primary slit is not formed, the resist does not remain in the space of the primary slit, and the resist remaining after forming the metal thin film is removed. Even if it is removed, the side electrode is not partially formed, and the side electrode can be formed satisfactorily.

  As described above, in the method of manufacturing the chip resistor according to the present embodiment, it is possible to satisfactorily form the side electrodes when manufacturing the chip resistor.

  In Examples 1 and 2, the resist other than the mask portion is removed by the photolithography method. However, the present invention is not limited to this, and the resist other than the mask portion may be removed by laser processing. In this case, non-thermal processing with a UV laser is desirable. According to this, the waste of a developing solution and stripping solution can be eliminated.

  In the first and second embodiments, the step of forming the secondary slit J2 on the upper surface of the alumina substrate 5 is performed before the resistor is formed. However, the present invention is not limited to this, and the step of forming the secondary slit on the lower surface of the alumina substrate 5 is performed. Any step may be used as long as it is after and before the primary division step.

  In the first and second embodiments, the upper electrode is formed after the resistor is formed and the upper electrode is stacked on the resistor. However, the upper electrode is formed on the upper surface of the alumina substrate. Then, a resistor may be formed thereafter, and the resistor may be stacked on the upper surface electrode.

  In addition, in said description, FIGS. 5-8 and FIGS. 13-16 explain using the state which planarly viewed the manufacturing process of the chip resistor, FIGS. 9-11, FIG. The manufacturing process of the chip resistor will be described using a cross-sectional state.

It is sectional drawing which shows the structure of the chip resistor based on Example 1 and Example 2 of this invention. It is explanatory drawing which shows notionally arrangement | positioning of the principal part of the chip resistor based on Example 1 and Example 2 of this invention. It is explanatory drawing which shows notionally arrangement | positioning of the principal part of the chip resistor based on Example 1 and Example 2 of this invention. It is a flowchart figure which shows the manufacturing process of the chip resistor based on Example 1 of this invention. It is explanatory drawing which shows the manufacturing process of the chip resistor based on Example 1 of this invention. It is explanatory drawing which shows the manufacturing process of the chip resistor based on Example 1 of this invention. It is explanatory drawing which shows the manufacturing process of the chip resistor based on Example 1 of this invention. It is explanatory drawing which shows the manufacturing process of the chip resistor based on Example 1 of this invention. It is explanatory drawing which shows the manufacturing process of the chip resistor based on Example 1 of this invention. It is explanatory drawing which shows the manufacturing process of the chip resistor based on Example 1 and Example 2 of this invention. It is explanatory drawing which shows the manufacturing process of the chip resistor based on Example 1 and Example 2 of this invention. It is a flowchart figure which shows the manufacturing process of the chip resistor based on Example 2 of this invention. It is explanatory drawing which shows the manufacturing process of the chip resistor based on Example 2 of this invention. It is explanatory drawing which shows the manufacturing process of the chip resistor based on Example 2 of this invention. It is explanatory drawing which shows the manufacturing process of the chip resistor based on Example 2 of this invention. It is explanatory drawing which shows the manufacturing process of the chip resistor based on Example 2 of this invention. It is explanatory drawing which shows the manufacturing process of the chip resistor based on Example 2 of this invention. In this invention, it is explanatory drawing which shows the other example at the time of forming a resistor. It is sectional drawing which shows the state in which the jetty part was formed when the slit was formed by laser scribing.

Explanation of symbols

A1, A2 Chip resistor 10 Insulating substrate 12, G12 Resistor 14, G14 Upper surface electrode 20, G20 Protective film 22, G22 Lower surface electrode 24 Side electrode 26 Plating 28 Nickel plating 30 Tin plating 40 Electrode portion 42 Lower surface side electrode portion

Claims (8)

A method of manufacturing a chip resistor,
A lower surface electrode forming step of forming a lower surface electrode on a lower surface of a substrate body having at least a size corresponding to a plurality of the insulating substrates, the substrate body being an insulating substrate body in the chip resistor;
On the lower surface of the substrate body, without forming the primary slit, the lower surface side slit forming step of forming only the secondary slit by laser scribing,
On the upper surface of the substrate body, an upper surface side slit forming step of forming a primary slit and a secondary slit by laser scribing,
A forming member forming step of forming each forming member of the resistor, the upper surface electrode, and the protective film on the upper surface side of the substrate body,
A mask forming step of forming a mask on the upper surface side of the substrate body;
A primary dividing step of dividing the substrate body along the primary slit to form a plurality of strip-shaped substrates;
A metal thin film forming step of forming a metal thin film for side electrodes on a strip-shaped substrate;
A resist removal step for removing the remaining resist;
A method of manufacturing a chip resistor, comprising: 2. The method of manufacturing a chip resistor according to claim 1, wherein in the mask forming step, a mask is formed using a negative type resist. A method of manufacturing a chip resistor,
A lower surface electrode forming step of forming a lower surface electrode on a lower surface of a substrate body having at least a size corresponding to a plurality of the insulating substrates, the substrate body being an insulating substrate body in the chip resistor;
On the lower surface of the substrate body, without forming the primary slit, the lower surface side slit forming step of forming only the secondary slit by laser scribing,
On the upper surface of the substrate body, an upper surface side secondary slit forming step of forming a secondary slit by laser scribing,
A forming member forming step of forming each forming member of the resistor, the upper surface electrode, and the protective film on the upper surface side of the substrate body,
A mask forming step of forming a mask on the upper surface side of the substrate body;
An upper surface side primary slit forming step of forming a primary slit by laser scribing from the upper surface side of the substrate body;
A primary dividing step of dividing the substrate body along the primary slit to form a plurality of strip-shaped substrates;
A metal thin film forming step of forming a metal thin film for side electrodes on a strip-shaped substrate;
A resist removal step for removing the resist;
A method of manufacturing a chip resistor, comprising: 4. The method of manufacturing a chip resistor according to claim 3, wherein in the mask formation step, a mask is formed using a positive type resist. 5. The method of manufacturing a chip resistor according to claim 1, 2, 3, or 4, wherein in the mask formation step, a mask is formed by a photolithography method. 6. The method of manufacturing a chip resistor according to claim 1, wherein the metal thin film is formed by sputtering. A method of manufacturing a chip resistor,
A lower surface electrode forming step of forming a lower surface electrode on a lower surface of a substrate body having at least a size corresponding to a plurality of the insulating substrates, the substrate body being an insulating substrate body in the chip resistor;
On the lower surface of the substrate body, without forming a primary slit, a lower surface side slit forming step of forming only a secondary slit by laser scribing,
On the upper surface of the substrate body, an upper surface side slit forming step of forming a primary slit and a secondary slit by laser scribing,
A forming member forming step of forming each forming member of the resistor, the upper surface electrode, and the protective film on the upper surface side of the substrate body,
A mask forming step of forming a mask on the upper surface side of the substrate body, a mask forming step of forming a mask by a photolithography method using a negative type resist,
A primary dividing step of dividing the substrate body along the primary slit to form a plurality of strip-shaped substrates;
A metal thin film forming step of forming a metal thin film for side electrodes on a strip-shaped substrate by sputtering,
A resist removal step for removing the remaining resist;
A method of manufacturing a chip resistor, comprising: A method of manufacturing a chip resistor,
A lower surface electrode forming step of forming a lower surface electrode on a lower surface of a substrate body having at least a size corresponding to a plurality of the insulating substrates, the substrate body being an insulating substrate body in the chip resistor;
On the lower surface of the substrate body, without forming the primary slit, the lower surface side slit forming step of forming only the secondary slit by laser scribing,
On the upper surface of the substrate body, an upper surface side secondary slit forming step of forming a secondary slit by laser scribing,
A forming member forming step of forming each forming member of the resistor, the upper surface electrode, and the protective film on the upper surface side of the substrate body,
A mask forming step of forming a mask on the upper surface side of the substrate body, a mask forming step of forming a mask by a photolithography method using a positive type resist,
An upper surface side primary slit forming step of forming a primary slit by laser scribing from the upper surface side of the substrate body;
A primary dividing step of dividing the substrate body along the primary slit to form a plurality of strip-shaped substrates;
A metal thin film forming step of forming a metal thin film for side electrodes on a strip-shaped substrate by sputtering,
A resist removal step for removing the resist;
A method of manufacturing a chip resistor, comprising:

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