JP4383418B2 - Thin film production apparatus and thin film production method - Google Patents

Description

  The present invention relates to a thin film manufacturing apparatus and a thin film manufacturing method for forming a metal component, and is capable of manufacturing a uniform thin film without increasing the processing time regardless of the environment and the film forming history.

  Currently, in the manufacture of semiconductors and the like, film formation using a plasma CVD (Chemical Vapor Deposition) apparatus is known. A plasma CVD apparatus is a plasma reaction of a gas such as an organometallic complex that becomes a material of a film introduced into a chamber by a high frequency incident from a high frequency antenna, and a chemical reaction on the substrate surface by active excited atoms in the plasma. Is a device for forming a metal thin film or the like by promoting the above.

  On the other hand, the present inventors installed a member to be etched, which is a metal component for producing a high vapor pressure halide, and made of a metal component desired to be formed in a chamber, and converted the halogen gas into plasma to form the member to be etched. A plasma CVD apparatus (hereinafter referred to as a new type of plasma CVD apparatus) that forms a precursor, which is a halide of a metal component, by etching with a halogen radical and deposits only the metal component of the precursor on a substrate; A film forming method was developed (for example, see Patent Document 1 below).

In the above-described plasma CVD apparatus of the new type, the metal film is formed on the substrate by controlling the temperature of the substrate to be lower than the temperature of the member to be etched which is a metal source to be formed. For example, when the metal of the member to be etched is M and the halogen gas is Cl ₂ , the member to be etched is controlled to a high temperature (for example, 300 ° C. to 700 ° C.) and the substrate is controlled to a low temperature (for example, about 200 ° C.) An M thin film can be formed on the substrate. This is thought to be due to the following reaction.

(1) Plasma dissociation reaction; Cl ₂ → 2Cl ^*
(2) Etching reaction; M + Cl ^* → MCl (g)
(3) Adsorption reaction to the substrate; MC1 (g) → MC1 (ad)
(4) Film formation reaction; MCl (ad) + Cl ^* → M + Cl ₂ ↑
Here, Cl ^* represents a Cl radical, (g) represents a gas state, and (ad) represents an adsorption state.

In the above-described new type CVD apparatus, the film forming reaction is appropriately performed by keeping the ratio of MCl and Cl ^* appropriately. That is, as the film formation conditions, the ratio of MCl and Cl ^* is set by appropriately setting the flow rate of Cl ₂ gas, pressure, power, the temperature of the substrate and the member to be etched, the distance between the substrate and the member to be etched, and the like. It can be controlled almost equally, and M is deposited without reducing the deposition rate and without causing excessive etching by Cl ^{* on} the substrate.

  In the above-described new type CVD apparatus, in order to perform film formation with excellent film thickness uniformity (for example, ± 3% or less of the average film thickness), film formation conditions (process conditions) suited to the equipment and environment. And device conditions are set. In this case, the conditions change due to the influence of the ambient temperature and film formation history, etc., so that the influence of the ambient temperature and film formation history is affected by correcting the process conditions and equipment conditions according to the film formation result. Minimized to keep the film thickness uniform.

  However, since it is necessary to adjust the process conditions according to the surrounding environment according to the film formation result, the follow-up to the change in the surrounding environment is delayed, and the time required for the adjustment increases. For this reason, the actual situation is that there is a limit to shortening the working time and improving the yield.

JP 2003-147534 A

  The present invention has been made in view of the above situation, and provides a thin film production apparatus and a thin film production method capable of producing a uniform thin film without increasing the processing time regardless of the surrounding environment and film formation history. With the goal.

In order to achieve the above object, a thin film manufacturing apparatus according to a first aspect of the present invention includes a chamber in which a substrate is accommodated, a metal member to be etched provided in a chamber at a position where the substrate faces, and an interior of the chamber. Working gas supply means for supplying a working gas containing halogen and plasma inside the chamber, generating working gas plasma to generate halogen radicals, and etching the member to be etched with the halogen radicals. metal in the precursor is a plasma generating means for generating a precursor which is a metal halide gas state consisting of metals and halogens, the temperature of the substrate side to be lower than the temperature of the etched member included in the deposition apparatus for depositing on the substrate, said precursor in the chamber by irradiating a belt-like laser beam into the chamber A laser irradiation means to emit light, and an image processing means for image processing by monitoring the light emission distribution of the precursor by a laser beam, and light emission distribution of the precursor in accordance with the production conditions of the thin film is stored in advance, based on the emission distribution which is the storage, characterized in that a control means for changing the image processing light emission distribution uniform fabrication conditions of I ing urchin film by the image processing means. According to a second aspect of the present invention, there is provided a thin film manufacturing apparatus of the present invention, a chamber in which a substrate is accommodated, a metal member to be etched provided in a chamber facing the substrate, and an action containing halogen inside the chamber. Working gas supply means for supplying a gas, and plasma inside the chamber, generating a working gas plasma to generate halogen radicals, and etching the member to be etched with the halogen radicals, and the metal and halogen contained in the member to be etched And a plasma generating means for generating a precursor which is a metal halide in a gas state, and the temperature of the substrate is made lower than the temperature of the member to be etched to form the metal in the precursor on the substrate. In the film forming apparatus, the precursor is reduced by the halogen radicals by irradiating a chamber with a laser beam. The laser irradiation means for emitting the metal atoms in the gas state generated in the chamber, the image processing means for monitoring the light emission distribution of the metal atoms by the laser light and image processing, and the thin film production conditions The light emission distribution of the corresponding metal atoms is stored in advance, and control for changing the thin film production conditions based on the stored light emission distribution so that the light emission distribution image-processed by the image processing means is uniform. Means.

In the present invention according to claims 1 and 2 , the thin film preparation conditions are appropriately changed based on the light emission distribution status of the precursor or metal atoms (dissociated products) , so that the dissociated material on the upper part of the substrate becomes uniform. By doing so, the density of the dissociated material becomes uniform for each substrate, and the influence of the ambient temperature, film formation history, etc. can be suppressed to the minimum, and the film thickness uniformity can be maintained.

The thin film production apparatus of the present invention according to claim 3 is the thin film production apparatus according to claim 1 or 2 , wherein the laser beam irradiated by the laser irradiation means crosses the substrate through the center of the substrate . It is characterized by having a strip shape.

According to the third aspect of the present invention, the thin film production conditions can be changed based on the distribution of dissociated substances on the center of the substrate.

Moreover, the thin film manufacturing apparatus of this invention which concerns on Claim 4 is a thin film manufacturing apparatus as described in any one of Claims 1-3. The said image processing means is a camera which image | photographs the surface of a laser beam, and a camera. And a processing means for processing the image into a two-dimensional image representing the distribution of light emission intensity.

In the present invention according to claim 4 , it is possible to change the production conditions of the thin film by representing the distribution of the emission intensity in a two-dimensional image.

Moreover, the thin film manufacturing apparatus of this invention which concerns on Claim 5 is a thin film manufacturing apparatus as described in any one of Claims 1-4. WHEREIN: The flow volume adjustment means which controls flow volume is provided in the said working gas supply means. together, provided with vacuum means for the chamber at a predetermined vacuum pressure, a plasma generating means serves to plasma inside the chamber is supplied with electric power by the RF power source, production conditions of the thin film, the adjustment of the vacuum means At least one of the pressure in the chamber according to the above, the flow rate of the working gas by adjusting the flow rate adjusting means, and the RF power of the RF power source.

In the present invention according to claim 5 , the density of the dissociated material can be made uniform by changing at least one of the pressure in the chamber, the flow rate of the working gas, and the RF power.

Moreover, the thin film production apparatus of the present invention according to claim 6 is the thin film production apparatus according to any one of claims 1 to 5 , wherein the working gas containing halogen is a working gas containing chlorine as a halogen. It is characterized by being.

In the present invention according to claim 6 , it is possible to produce a thin film using an inexpensive working gas containing chlorine.

In order to achieve the above object, the thin film manufacturing method of the present invention according to claim 7 is to supply a working gas containing halogen into a chamber provided with a metal member to be etched to generate a working gas plasma. generates a halogen radical, to form a precursor which is a metal halide gas state consisting of metals and halogens contained in the etched member by etching the etched member with a halogen radical, the temperature of the substrate side in thin-film producing method for forming a metallic in the precursor to the substrate by lower than the temperature of the etched member, and by irradiating a belt-like laser beam is emitted to the precursors in the chamber into the chamber, wherein the detection of luminescence distribution of the precursor, based on the known emission distribution of the precursor in accordance with the production conditions of the film, is uniformly the detected emission distribution And performing film deposition by changing the manufacturing conditions of the thin film so that. In the thin film manufacturing method of the present invention according to claim 8, a halogen-containing working gas is supplied into a chamber provided with a metal member to be etched, and a working gas plasma is generated to generate a halogen radical. Etching the member to be etched with halogen radicals generates a precursor that is a metal halide in a gas state composed of a metal and halogen contained in the member to be etched, and the temperature on the substrate side is made higher than the temperature of the member to be etched. In the thin film manufacturing method in which the metal in the precursor is deposited on the substrate by lowering the thickness, the precursor is reduced by the halogen radicals by irradiating the chamber with a belt-shaped laser beam and generated in the chamber The metal atoms in a gas state to emit light, detect the light emission distribution of the metal atoms, and the gold according to the thin film production conditions Based of the known emission distribution of atoms, and performing film deposition by changing the manufacturing conditions of the thin film so that the detected light emission distribution becomes uniform.

In the present invention according to claims 7 and 8 , the laser-induced fluorescence in which the dissociation material on the upper portion of the substrate becomes uniform by appropriately changing the thin film preparation conditions based on the emission distribution of the laser-induced fluorescence according to the dissociation material distribution. In this light emission state, the density of dissociated substances becomes uniform for each substrate, and the influence of the ambient temperature, film formation history, etc. can be minimized and the film thickness uniformity can be maintained.

The thin film production method of the present invention according to claim 9 is the thin film production method according to claim 7 or 8 , wherein the belt-like laser light is in a belt shape passing through the center of the substrate and crossing the substrate. And

In the present invention according to claim 9 , the conditions for forming the thin film can be changed based on the distribution of dissociated substances on the center of the substrate.

The thin film production method of the present invention according to claim 10 is the thin film production method according to any one of claims 7 to 9 , wherein the emission distribution is detected by emitting an image obtained by photographing a surface of a laser beam. It is characterized by processing by processing into a two-dimensional image representing the intensity distribution .

In the present invention according to claim 10 , the intensity distribution of the laser-induced fluorescence can be represented in a two-dimensional image to change the thin film production conditions.

The thin film production method of the present invention according to claim 11 is the thin film production method according to any one of claims 8 to 10 , wherein the thin film production conditions include pressure in a chamber, flow rate of working gas, It includes at least one of RF power for generating plasma.

In the present invention according to claim 11 , the density of the dissociated material can be made uniform by changing at least one of the pressure in the chamber, the flow rate of the working gas, and the RF power.

The thin film production method of the present invention according to claim 12 is the thin film production method according to any one of claims 7 to 11 , wherein the working gas containing halogen is a working gas containing chlorine as a halogen. It is characterized by being.

In the present invention according to claim 12 , it is possible to produce a thin film using an inexpensive working gas containing chlorine.

  The thin film production apparatus and thin film production method of the present invention can produce a uniform thin film without lengthening the processing time regardless of the surrounding environment and film formation history.

  FIG. 1 shows a schematic side view of a thin film production apparatus according to an embodiment of the present invention, and FIG. 2 shows a schematic plane of the thin film production apparatus according to an embodiment of the present invention. FIGS. 3 to 5 show the distribution state of Cu atoms in accordance with the thin film production conditions, and FIGS. 6 to 9 show the distribution state of CuCl molecules in accordance with the thin film production conditions.

  The configuration of a thin film production apparatus for carrying out the thin film production method of the present invention will be described with reference to FIGS. In this embodiment, a member to be etched made of Cu, which is a metal, is etched by Cl radicals, and a precursor is mainly adsorbed on the substrate and a thin film having the precursor on the substrate as a Cu component is formed by Cl reduction. It is explained with an example.

  As shown in the figure, a support base 2 as a susceptor is provided in the vicinity of the bottom of a chamber 1 made of, for example, ceramics (made of an insulating material), and a substrate 3 is placed on the support base 2. Is done. The support base 2 is provided with a temperature control means 6 including a heater 4 and a refrigerant flow means 5, and the support base 2 is set to a predetermined temperature (for example, a temperature at which the substrate 3 is maintained at 100 ° C. to 300 ° C.) by the temperature control means 6. ) Is controlled.

  The shape of the chamber is not limited to a cylindrical shape, and for example, a rectangular chamber can be applied.

  The upper surface of the chamber 1 is an opening, and the opening is closed by a plate-like ceiling plate 7 made of an insulating material (for example, made of ceramics). A plasma antenna 8 for converting the inside of the chamber 1 into plasma is provided above the ceiling plate 7, and the plasma antenna 8 is formed in a planar ring shape parallel to the surface of the ceiling plate 7. A matching unit 9 and a power source 10 are connected to the plasma antenna 8 to supply a high frequency. Plasma generating means for generating induction plasma is constituted by the plasma antenna 8, the matching unit 9, and the power source 10 (RF power source).

  The chamber 1 holds a member to be etched 11 made of, for example, copper (made of Cu), and the member to be etched 11 is disposed in a discontinuous state between the substrate 3 and the ceiling plate 7 with respect to the electric flow of the plasma antenna 8. Has been. For example, the member 11 to be etched is formed in a lattice shape and is structurally discontinuous with respect to the circumferential direction, which is the direction of electricity flow of the plasma antenna 8.

  In addition, as a structure which makes a discontinuous state with respect to the electric flow of the plasma antenna 8, the structure to be etched 11 is formed in a mesh shape, or a plurality of long protrusions are formed on the inner peripheral side of the ring. It is also possible. In addition, the member to be etched 11 can be configured to be retractable outside the chamber 1.

A gas nozzle 14 for supplying a working gas 17 containing chlorine as a halogen (a gas diluted to a predetermined concentration with He: Cl ₂ gas) 17 into the cylindrical portion of the chamber 1 above the member 11 to be etched. Is provided. The gas nozzle 14 extends to the center of the chamber 1, and the tip is directed upward to form a gas jet 15. The flow rate and pressure of He and Cl ₂ gas are controlled by the flow rate controller 16, and the Cl ₂ gas 17 diluted with He is sent to the gas nozzle 14 (working gas supply means).

It is also possible to connect a plurality of gas nozzles 14 around the cylindrical portion of the chamber 1 at equal intervals and supply the Cl ₂ gas 17 into the chamber 1 from the peripheral portion of the cylindrical portion of the chamber 1. In addition, as halogen contained in the working gas, fluorine, bromine, iodine, or the like can be applied. By using chlorine as the halogen, a thin film can be manufactured using inexpensive chlorine gas.

  Gases that are not involved in film formation are exhausted from the exhaust port 18. The interior of the chamber 1 closed by the ceiling plate 7 is maintained at a predetermined pressure by the vacuum device 19.

  Laser irradiation means is provided on the cylindrical portion of the chamber 1 above the support base 2. The laser irradiation means includes, for example, a laser light emitting means 22 made of a semiconductor laser diode and a light receiving means 23 for receiving the laser light. The laser light 24 irradiated into the chamber 1 from the laser light emitting means 22 is a belt-shaped laser light, and the surface of the laser light 24 passes through the center of the substrate 3 and is orthogonal to the substrate 3. And the camera 25 which image | photographs the surface of the laser beam 24 is provided.

  When the laser beam 24 is irradiated to a substance (a Cu atom, CuCl molecule: dissociated material described later) in the chamber 1, laser-induced fluorescence is generated. Laser-induced fluorescence is detected at different wavelengths in different directions from incident light having good directivity and monochromaticity, and the state of laser-induced fluorescence is photographed by the camera 25. The image of the camera 25 is processed into a two-dimensional image representing the distribution of light emission intensity by an image processing device 26 (see FIG. 2) and sent to the control means 20. The intensity distribution of the laser-induced fluorescence processed into the two-dimensional image appears in a state corresponding to the distribution of dissociation products.

The control means 20 has various dissociation intensity distributions (light emission distributions) in advance according to thin film production conditions (pressure in the chamber 1, flow rate of Cl ₂ gas 17, RF power, etc., specifically described later). It is remembered. And from the control means 20, based on the light emission distribution of the dissociated product represented by the two-dimensional image and the stored information, the thin film production conditions are appropriately changed so that the dissociated product becomes a uniform light emission state. Thus, a control signal is output.

  That is, as shown in FIG. 2, the light emission of the target distribution image 32 (in which the distribution is suppressed) based on the light emission intensity state of the image-processed two-dimensional image 31 (in the state where a large distribution is generated). A signal for changing the manufacturing conditions of the thin film is output so as to obtain the strength state.

In the thin film manufacturing apparatus described above, the Cl ₂ gas 17 is supplied into the chamber 1 from the gas outlet 15 of the gas nozzle 14. When electromagnetic waves are incident on the inside of the chamber 1 from the plasma antenna 8, the Cl ₂ gas 17 is ionized to generate Cl ₂ gas plasma to generate Cl radicals. The plasma is generated in the region shown by the gas plasma 12. The reaction at this time can be expressed by the following formula.
Cl ₂ → 2Cl ^* (1)
Here, Cl ^* represents a chlorine radical.

When the gas plasma 12 acts on the member to be etched 11 made of Cu, the member to be etched 11 is heated and an etching reaction occurs in Cu. The reaction at this time is represented by the following formula, for example.
Cu (s) + Cl ^* → CuCl (g) (2)
Here, s represents a solid state and g represents a gas state. Formula (2) is a state in which Cu is etched by gas plasma 12 (chlorine radical Cl ^* ) to be a precursor 13.

The member to be etched 11 is heated by generating the gas plasma 12 (for example, 300 ° C. to 700 ° C.), and the temperature of the substrate 3 is lower than the temperature of the member to be etched 11 by the temperature control means 6 (for example, 100 ° C. to 300 ° C.). As a result, the precursor 13 is adsorbed (deposited) on the substrate 3. The reaction at this time is represented by the following formula, for example.
CuCl (g) → CuCl (ad) (3)

Cu adsorbed on the substrate 3 is reduced by the chlorine radical Cl ^* to become a Cu component.
The reaction at this time is represented by the following formula, for example.
CuCl (ad) + Cl ^* → Cu (s) + Cl ₂ ↑ (4)

Further, a part of the gasified CuCl (g) generated in the above formula (2) is reduced by the chlorine radical Cl ^* before being adsorbed on the substrate 3 (see the above formula (3)), and is in a gaseous state. It may become. The reaction at this time is represented by the following formula, for example.
CuCl (g) + Cl ^* → Cu (g) + Cl ₂ ↑ (5)
Thereafter, the gaseous Cu component is adsorbed on the substrate 3.
As a result, a Cu thin film is formed on the substrate 3.

  When the above-described Cu thin film is produced, a belt-like laser beam 24 is irradiated from the laser emission means 22 into the chamber 1. When the laser beam 24 irradiates dissociated substances (for example, Cu atoms and CuCl molecules) in the chamber 1, laser-induced fluorescence having an emission intensity distribution corresponding to the density distribution of Cu atoms and CuCl molecules is generated. The state of laser-induced fluorescence (the emission intensity distribution corresponding to the density distribution of the dissociated product) is photographed by the camera 25, and information on the intensity distribution of the laser-induced fluorescence processed into a two-dimensional image is sent to the control means 20. Based on the intensity distribution of the laser-induced fluorescence corresponding to the density distribution of the dissociation material on the upper part of the substrate 3 (based on the information of the input two-dimensional image), the intensity of the laser-induced fluorescence is made uniform so as to be uniform. The production conditions are changed.

The control means 20 stores in advance various dissociation intensity distributions (light emission distributions) according to the pressure in the chamber 1, the flow rate of the Cl ₂ gas 17, the RF power, and the like, which are the thin film production conditions. In the control means 20, the stored intensity distributions are appropriately combined, and the pressure in the chamber 1, the flow rate of the Cl ₂ gas 17, the RF power, etc. are adjusted so as to cancel the intensity distribution of the input two-dimensional image. The process conditions are changed so that the dissociated material on the substrate 3 becomes uniform. That is, the process conditions are changed so that the density of Cu atoms and CuCl molecules is uniform for each substrate 3, and the uniformity of thin film production is improved.

  As a result, even if the optimum thin film production conditions (process conditions) change from the initial conditions due to the ambient temperature environment and film formation history, the optimum process conditions can be obtained for each substrate 3, and the ambient conditions can be quickly adjusted. Following this, it becomes possible to produce a thin film with a uniform film thickness.

  Based on FIG. 3 to FIG. 5, an example of process conditions and Cu atom distribution state stored in advance in the control means 20 will be described.

  FIG. 3 shows the relationship between pressure and Cu atom distribution. 3A is 110 mTorr, FIG. 3B is 150 mTorr, and FIG. 3C is a two-dimensional image situation and light intensity distribution at 200 mTorr. As the pressure changes to 110 mTorr, 150 mTorr, and 200 mTorr, the portion where the intensity of the laser-induced fluorescence is strong (indicating that the intensity is strong in the order of white lines, diagonal lines, and meshes) gradually increases. The distribution of light intensity corresponding to the density is a large mountain shape with strength.

  FIG. 4 shows the relationship between RF power and Cu atom distribution. 4A shows the state of the two-dimensional image and the light intensity distribution at 500 W, FIG. 4B at 700 W, and FIG. 4C at 1000 W. As with the relationship of pressure, as the RF power changes to 500 W, 700 W, and 1000 W, there are many sites where the intensity of laser-induced fluorescence is strong (indicating that the intensity is strong in the order of white and mesh), It rapidly increases at 1000 W, and the light intensity distribution corresponding to the density of Cu atoms becomes a large and small mountain shape.

FIG. 5 shows the relationship between the flow rate of the Cl ₂ gas 17 and the distribution of Cu atoms. FIG. 5A shows the state of the two-dimensional image and the light intensity distribution at 30 sccm, FIG. 5B at 50 sccm, and FIG. 5C at 70 sccm. As the flow rate of the Cl ₂ gas 17 is changed to 30 sccm and 50 sccm, the portion where the intensity of the laser-induced fluorescence is strong (indicating that the intensity is strong in the order of white lines, diagonal lines, and meshes) increases, and 50 sccm and 70 sccm. As the flow rate of Cl ₂ gas 17 changes, the number of sites where the intensity of laser-induced fluorescence is strong (indicating that the intensity is strong in the order of white lines, diagonal lines, and meshes) decreases and corresponds to the density of Cu atoms. The resulting light intensity distribution becomes a mountain shape that becomes weaker after becoming stronger.

  When the density of Cu atoms on the substrate 3 is made uniform, the process conditions are changed based on, for example, the conditions of FIGS. 3 to 5 stored in advance, so that the Cu atoms on the substrate 3 become uniform. Create. Thereby, the density of Cu atoms on the substrate 3 is made uniform, and a highly uniform Cu thin film is produced.

  Based on FIGS. 6 to 9, an example of the process conditions stored in advance in the control means 20 and the distribution state of CuCl molecules will be described.

  FIG. 6 shows the relationship between the pressure and the distribution of CuCl molecules. 6A shows 110 mTorr, FIG. 6B shows 150 mTorr, and FIG. 6C shows the state of a two-dimensional image and light intensity distribution at 200 mTorr. As the pressure changes to 110 mTorr, 150 mTorr, and 200 mTorr, the portion of the laser-induced fluorescence intensity (indicating that the intensity is higher in the order of white, diagonal lines, and mesh) gradually increases, and the CuCl molecule The light intensity distribution according to the density is a large mountain shape.

  FIG. 7 shows the relationship between RF power and CuCl molecule distribution. FIG. 7A shows the state of the two-dimensional image and the distribution of light intensity at 500 W and FIG. 7B at 700 W. Even if the RF power is changed to 500 W or 700 W, the portion where the intensity of laser-induced fluorescence is strong (diagonal line, mesh portion) does not increase, and the light intensity distribution corresponding to the density of CuCl molecules becomes a small mountain shape.

FIG. 8 shows the relationship between the flow rate of the Cl ₂ gas 17 and the distribution state of CuCl molecules. FIG. 8A shows the situation of the two-dimensional image and the light intensity distribution at 30 sccm, FIG. 8B at 50 sccm, and FIG. 8C at 70 sccm. As the flow rate of the Cl ₂ gas 17 is changed to 30 sccm, 50 sccm, and 70 sccm, the site where the intensity of laser-induced fluorescence is strong (indicating that the intensity is strong in the order of white and diagonal lines) gradually increases, and CuCl It becomes a mountain shape in which the light intensity distribution corresponding to the density of the molecules gradually increases.

FIG. 9 shows the relationship between the amount of Ar added and the distribution of CuCl molecules. FIG. 9A shows the situation of a two-dimensional image when there is no addition (Cl ₂ / He: 30 sccm), and FIG. 9B shows the situation of a two-dimensional image when Ar is added (Cl ₂ / He: 10 sccm, Ar 20 sccm). It is a distribution of light intensity. By adding Ar, there are slightly more sites where the intensity of laser-induced fluorescence is strong (indicated by white and diagonal lines), and there is a slight distribution of light intensity corresponding to the density of CuCl molecules. It becomes Yamagata in the state of growing.

  In the case where the density of CuCl molecules on the substrate 3 is made uniform, the process conditions are changed based on, for example, the conditions of FIGS. 6 to 9 stored in advance so that the CuCl molecules on the substrate 3 become uniform. Create. Thereby, the density of CuCl molecules on the substrate 3 is made uniform, and a highly uniform Cu thin film is produced.

  In the above-described embodiment, the Cu thin film has been described as an example of the metal thin film. However, various metal and alloy thin films can be formed using other metal members to be etched such as Ti, Ta, Ni, and Al. It is possible to apply. Further, although an example of photographing the density distribution of Cu atoms and CuCl molecules as dissociated materials has been described, the density distribution of Cl atoms can be photographed by selecting the wavelength to be photographed.

Further, as the thin film production conditions, the pressure in the chamber 1, the flow rate of the Cl ₂ gas 17, the RF power, and the addition of Ar have been described as examples. However, the temperature, the position of the gas nozzle 14 and a plurality of gas nozzles 14 are used. The above control can be performed by applying various process conditions such as individual adjustment of supply stop and raising / lowering of the support base 2 and storing the intensity distribution state of the dissociated material according to each condition.

  Further, although the laser beam 24 is in the form of a band passing through the center of the substrate 3 and orthogonal to the substrate 3, the angle with respect to the substrate 3 is arbitrary, for example, a band-shaped laser beam parallel to the substrate 3 is used. It is also possible to photograph the light emission state from above. It is also possible to take a picture of the light emission state while moving a belt-like laser beam passing through the center of the substrate 3 and orthogonal to the substrate 3 in a direction parallel to the substrate 3.

  In the thin film manufacturing apparatus and the thin film manufacturing method described above, it is not necessary to adjust the process conditions even if the surrounding environment or the film forming history changes, and a uniform thin film can be formed without increasing the processing time regardless of external factors. Can be produced. For this reason, even if the surrounding environment and the film formation history change, the time for adjusting the process conditions is not required, and the efficiency of thin film production can be improved and the decrease in yield can be suppressed.

  INDUSTRIAL APPLICABILITY The present invention can be used in the industrial field of a thin film manufacturing apparatus and a thin film manufacturing method capable of manufacturing a uniform thin film without increasing the processing time regardless of the environment and the film forming history.

1 is a schematic side view of a thin film manufacturing apparatus according to an embodiment of the present invention. 1 is a schematic plan view of a thin film manufacturing apparatus according to an embodiment of the present invention. It is explanatory drawing of the distribution condition of Cu atom according to the preparation conditions of a thin film. It is explanatory drawing of the distribution condition of Cu atom according to the preparation conditions of a thin film. It is explanatory drawing of the distribution condition of Cu atom according to the preparation conditions of a thin film. It is explanatory drawing of the distribution condition of CuCl molecule | numerator according to the preparation conditions of a thin film. It is explanatory drawing of the distribution condition of CuCl molecule | numerator according to the preparation conditions of a thin film. It is explanatory drawing of the distribution condition of CuCl molecule | numerator according to the preparation conditions of a thin film. It is explanatory drawing of the distribution condition of CuCl molecule | numerator according to the preparation conditions of a thin film.

DESCRIPTION OF SYMBOLS 1 Chamber 2 Support stand 3 Substrate 4 Heater 5 Refrigerant distribution means 6 Temperature control means 7 Ceiling board 8 Plasma antenna 9 Matching device 10 Power supply 11 Member to be etched 12 Gas plasma 13 Precursor 14 Gas nozzle 15 Gas jet 16 Flow controller 17 Action Gas (Cl ₂ gas)
DESCRIPTION OF SYMBOLS 18 Exhaust port 19 Vacuum apparatus 20 Control means 22 Laser light emission means 23 Light reception means 25 Camera 26 Image processing apparatus 31 Two-dimensional image 32 Distribution image

Claims (12)

A chamber containing a substrate;
A metal member to be etched provided in the chamber at a position where the substrate faces, a working gas supply means for supplying a working gas containing halogen to the inside of the chamber, and plasmaizing the inside of the chamber to generate working gas plasma. Te generates a halogen radical, and a plasma generating means for generating a precursor which is a metal halide gas state consisting of metals and halogens contained in the etched member by etching the etched member with a halogen radical In the film forming apparatus for forming the metal in the precursor on the substrate by lowering the temperature on the substrate side lower than the temperature of the member to be etched,
Laser irradiation means for irradiating the chamber with a laser beam to emit the precursor in the chamber ; and
Image processing means for image processing by monitoring the light emission distribution of the precursor by a laser beam,
Emission distribution of the precursor in accordance with the production conditions of the thin film is stored in advance, based on the light emission distribution that is the storage, image processing and emission distribution uniform by ing urchin film by the image processing unit And a control means for changing the manufacturing conditions of the thin film manufacturing apparatus. A chamber containing a substrate;
A metal member to be etched provided in the chamber at a position where the substrate faces, a working gas supply means for supplying a working gas containing halogen to the inside of the chamber, and plasmaizing the inside of the chamber to generate working gas plasma. Generating a halogen radical, and etching a member to be etched with the halogen radical, thereby generating a precursor that is a metal halide in a gas state composed of a metal contained in the member to be etched and halogen, and a plasma generating means, In the film forming apparatus for forming the metal in the precursor on the substrate by lowering the temperature on the substrate side lower than the temperature of the member to be etched,
A laser irradiation means for irradiating a belt-shaped laser beam in the chamber, and emitting the metal atoms in a gas state generated in the chamber by reducing the precursor with the halogen radical;
Image processing means for performing image processing by monitoring the light emission distribution of the metal atoms by laser light;
The light emission distribution of the metal atoms corresponding to the thin film production conditions is stored in advance, and the thin film production is performed so that the light emission distribution image-processed by the image processing means is uniform based on the stored light emission distribution. Control means to change the condition and
A thin film manufacturing apparatus comprising: 3. The thin film manufacturing apparatus according to claim 1, wherein the belt-shaped laser light irradiated by the laser irradiation unit has a belt shape passing through the center of the substrate and crossing the substrate. The said image processing means is provided with the camera which image | photographs the surface of a laser beam, and the processing means which processes the image of a camera into the two-dimensional image showing distribution of emitted light intensity, The any one of Claims 1-3 characterized by the above-mentioned. thin-film producing apparatus according to an item or. The working gas supply means is provided with a flow rate adjusting means for controlling the flow rate and a vacuum means for setting the chamber to a predetermined vacuum pressure. The plasma generating means is supplied with electric power from an RF power source, and plasma is generated inside the chamber. Is,
Conditions for producing the thin film according to claim 1 to 4, characterized in that it comprises pressure in the chamber by adjusting the vacuum means, the flow rate of the working gas by adjusting the flow rate adjusting means, at least one of RF power of the RF power source The thin film production apparatus according to any one of the above . The thin-film manufacturing apparatus according to claim 1, wherein the working gas containing halogen is a working gas containing chlorine as a halogen . A member to be etched is supplied by supplying a working gas containing halogen into a chamber equipped with a metal member to be etched, generating a working gas plasma to generate halogen radicals, and etching the member to be etched with halogen radicals. include generating a metallic and a metal halide is precursor gas state consisting of halogens, a substrate metals in the precursor by the temperature of the substrate side to be lower than the temperature of the etched member to In a thin film manufacturing method for forming a film ,
By irradiating the chamber with a band-shaped laser beam, the precursor in the chamber emits light, detects the light emission distribution of the precursor, and based on the known light emission distribution of the precursor according to the thin film production conditions A thin film manufacturing method characterized in that the thin film manufacturing conditions are changed so that the detected light emission distribution becomes uniform. A member to be etched is supplied by supplying a working gas containing halogen into a chamber equipped with a metal member to be etched, generating a working gas plasma to generate halogen radicals, and etching the member to be etched with halogen radicals. A precursor, which is a metal halide in a gas state composed of a metal and a halogen contained in the substrate, is generated, and the metal in the precursor is formed on the substrate by setting the temperature on the substrate side lower than the temperature of the member to be etched. In the thin film manufacturing method to
By irradiating a strip-shaped laser beam into the chamber, the precursor is reduced by the halogen radicals so that the metal atoms generated in the chamber emit light, and the emission distribution of the metal atoms is obtained. Based on the known light emission distribution of the metal atoms according to the detection conditions of the thin film, the film formation is performed by changing the thin film preparation conditions so that the detected light emission distribution is uniform. Thin film manufacturing method. The thin film manufacturing method according to claim 7 or 8, wherein the belt-like laser light has a belt-like shape passing through the center of the substrate and crossing the substrate . The thin film according to any one of claims 7 to 9, wherein the emission distribution is detected by processing an image obtained by photographing a surface of a laser beam into a two-dimensional image representing the distribution of emission intensity. Manufacturing method. Conditions for producing the thin film, the pressure in the chamber, the working gas flow rate, according to any one of claims 8-10, characterized in that it comprises at least one of RF power for generating a plasma Thin film manufacturing method. The method for producing a thin film according to claim 7, wherein the working gas containing halogen is a working gas containing chlorine as a halogen .

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