JP4408354B2 - Ion processing equipment - Google Patents

Description

  The present invention relates to an ion processing apparatus for forming a thin film on the surface of a substrate using plasma generated by applying high-frequency power.

  Conventionally, an ion processing apparatus is suitably used as a film forming apparatus for forming an optical film such as antireflection by laminating a thin film on the surface of a glass substrate or a resin substrate.

  As a conventional ion processing apparatus, for example, there is an ion plating apparatus. This ion plating apparatus has a vacuum chamber capable of maintaining the inside in a substantially vacuum state. An evaporation source for evaporating the thin film forming material is disposed at the bottom of the vacuum chamber, and a substrate holder is disposed opposite the evaporation source. A rotating shaft is attached to the center of the back surface of the base material holder via an insulating plate. The rotating shaft passes through the ceiling wall of the vacuum chamber and is connected to a rotary driving device disposed on the upper portion of the vacuum chamber. It is connected. That is, the base material holder is rotatably held by the rotary shaft and the rotary drive device inside the vacuum chamber. An annular contact is embedded in the outer periphery of the contact portion between the insulating plate and the base material holder. This contact is electrically connected to the substrate holder. In addition, a carbon brush is in contact with the contact, and the carbon brush is connected to a high-frequency power source that supplies high-frequency power to the substrate holder and a DC power source that applies a bias voltage. In order to protect the rotary shaft and the rotary drive device, they are completely surrounded by a part of the vacuum chamber and the housing.

  In this ion plating apparatus, after a base material such as a glass base material or a resin base material is attached to the base material holder, the rotation driving device is operated to rotate the base material, and the high frequency power source and the direct current power source are operated. Then, high frequency power and a bias voltage are applied from the carbon brush to the rotating contact, that is, the base material holder. As a result, a high-frequency electric field is formed inside the vacuum chamber, and a bias electric field is generated between the substrate holder and the vacuum chamber. Thereafter, when the thin film forming material is evaporated from the evaporation source, the evaporated thin film forming material is excited by the plasma generated by the high-frequency electric field, and the excited thin film forming material is accelerated by the bias electric field, It collides with and adheres to the surface. As a result, a thin film having strong adhesion is formed on the substrate. By performing this film formation a predetermined number of times while changing the type of the thin film forming material, the thin films are laminated in a multilayer shape on the substrate. That is, an optical film such as antireflection is formed on the substrate.

  By the way, in the conventional ion plating apparatus which operate | moves in this way, a carbon brush and a contactor (power supply site | part) are provided in the inside of the vacuum chamber. For this reason, the carbon brush may be worn by the rotation of the substrate holder, and the shavings may be scattered inside the vacuum chamber. And in such a case, the problem that the film-forming characteristic of the thin film formed on a base material deteriorates generate | occur | produces.

  On the other hand, the inside of the vacuum chamber during film formation is in a high vacuum state. At this time, since the friction coefficient between the contact and the carbon brush increases and wear of the carbon brush is promoted, stable feeding of the high-frequency power and the bias voltage may be hindered. Even in such a case, there arises a problem that the film forming characteristics of the thin film formed on the base material deteriorate.

Therefore, in order to avoid problems such as scattering of shavings derived from the carbon brush into the vacuum chamber, a high-frequency power and bias voltage feeding part is arranged outside (in the atmosphere) of the vacuum chamber, and the feeding part and rotation are arranged. There has been proposed a power feeding structure in which a shaft and a base material holder are electrically connected and high frequency power and a bias voltage are fed to the base material holder via a rotating shaft (for example, see Patent Document 1).
JP 2001-181831 (page 3-4, FIG. 1)

  According to the above proposed ion processing apparatus in which the feeding portion is arranged outside the vacuum chamber and feeds the high-frequency power and the bias voltage to the substrate holder via the rotating shaft, for example, the contact and the carbon brush are connected to the vacuum chamber. A problem that the film formation characteristics of the thin film formed on the substrate deteriorates because it is completely prevented that the shavings generated by wear of the carbon brush are scattered outside the vacuum chamber. Is solved.

  In addition, since the power feeding part is arranged in the atmosphere instead of in a vacuum, the friction coefficient between the contact and the carbon brush does not increase, and therefore the high frequency power and the bias voltage are not increased without promoting the wear of the carbon brush. Power can be stably supplied to the substrate holder. That is, the problem that the film formation characteristic of the thin film formed on the substrate is deteriorated is solved. As long as this is the case, the film forming characteristics of the thin film formed on the substrate are certainly improved.

  However, in the ion processing apparatus in which the high-frequency power and the bias voltage are supplied to the base material holder through the above-described rotation shaft, a high-frequency electric field is formed inside the vacuum chamber, and between the base material holder and the vacuum chamber. Therefore, it is necessary to electrically insulate the rotating shaft from the vacuum chamber and the rotation driving device. For this reason, in the proposed ion processing apparatus, a bearing having electrical insulation is used as a bearing member of the rotating shaft. However, this electrically insulating bearing made of a material such as a fluororesin is inferior in mechanical strength to a metal bearing that is usually used. A problem sometimes occurred.

  Further, when the rotating shaft is supported using a metal bearing, the housing that covers the rotating shaft and the rotation driving device is brought into conduction with the rotating shaft through the bearing, and therefore the high frequency power and bias voltage are also applied to the housing. Is fed. In this case, it is necessary to electrically insulate the housing from the vacuum chamber, and in order to prevent leakage of high frequency power from the housing, the housing is completely separated by a dedicated housing cover capable of blocking high frequency power leakage. It is necessary to cover. This is to prevent leakage of high-frequency power by completely covering the housing with a dedicated housing cover, and to prevent transmission efficiency of high-frequency power from being lowered. However, since the periphery of the rotation drive means and the power feeding part has a very complicated shape, the housing also has a complicated shape. The housing is completely covered by a dedicated housing cover so that high frequency power does not leak. It was not easy to seal. Further, in this case, the shape of the housing cover is complicated, and its workability and incorporation into the ion processing apparatus main body are deteriorated.

  In other words, the proposed ion processing apparatus that applies high-frequency power and bias voltage to the substrate holder via the rotating shaft is likely to cause problems with durability over time, and leakage of high-frequency power is completely eliminated. There are problems that it is difficult to prevent and that the processability of the housing cover and the ease of incorporation into the ion processing apparatus main body are poor.

  The present invention has been made to solve the above-described problems, has good durability over time, and can transmit high-frequency power efficiently while having a relatively simple configuration. An object is to provide an ion processing apparatus.

The present invention has been made in view of the above circumstances, and an ion processing apparatus according to the present invention includes a conductive vacuum chamber for performing ion processing on a substrate using high-frequency power therein, and the vacuum chamber. A conductive base material holder disposed in the base material, and a wall portion of the vacuum chamber, the inner end of the vacuum chamber passing through the first insulating member through the base material holder. And a conductive rotation shaft that is rotatably connected to the vacuum chamber, and a first portion that is insulated from the rotation shaft at a portion of the rotation shaft that is located outside the vacuum chamber. And a power transmission structure having a second power supply member for transmitting the high-frequency power to the first power supply member, and the first power supply member passing through the rotating shaft from the substrate holder Conductive path insulated from the rotating shaft When, with the second being connected to the feeding member high frequency power source for supplying the high frequency power, and a rotation means for rotating the rotary shaft, portions inorganic electrically insulating through at least in said rotary shaft of said conductive paths It may be surrounded by a member, and the inorganic electrical insulating member may be surrounded by a metal plate, and the metal plate may be grounded . With this configuration, high-frequency power is not applied to the rotating shaft itself, so that the rotating shaft and the vacuum chamber are insulated by using an electrically insulating bearing made of a material such as fluororesin as a bearing member of the rotating shaft. Since it is possible to use a metal bearing having sufficient mechanical strength that has been used favorably, it is possible to prevent the occurrence of problems related to durability over time of the ion processing apparatus. become. In addition, with this configuration, electrical insulation between the conductive path disposed in the vicinity of the rotating shaft in the hollow portion of the rotating shaft and the rotating shaft is completely performed. Further, since the inorganic electrical insulating member is surrounded by the metal plate, the formation of the capacitor by the conductive path and the rotating shaft is prevented. This makes it possible to prevent damage to, for example, the rotary drive device.

  In this case, the rotating shaft may have a hollow portion, and the conductive path may be formed in the hollow portion (claim 2).

  In addition, the first power supply member is a cylindrical conductor, the second power supply member is a brush, and the high-frequency power is generated so that the brush is in electrical contact with the cylindrical conductor. It may be transmitted (claim 3). With such a configuration, it is possible to realize a power transmission structure with a simple configuration conventionally used.

  A second insulating member that insulates the rotary shaft from the first power supply member, and the second insulating member is brought into contact with the first power supply member and the second power supply member; The generated dust may be formed so that it can be collected (claim 4). With this configuration, dust generated by the contact between the first power supply member and the second power supply member is prevented from adhering to a bearing member such as a bearing, and thereby the rotating shaft is always smoothly rotated. It becomes possible. In addition, it is possible to prevent the dust from scattering into the vacuum chamber, and therefore it is possible to effectively prevent the dust from adversely affecting the film forming characteristics.

And a housing formed so as to substantially cover at least a portion of the rotating shaft located outside the vacuum chamber, the power transmission structure, and the rotating means. and supported by, the rotary shaft may be rotatably held in the housing (claim 5). With such a configuration, a dedicated housing cover for covering the housing becomes unnecessary.

Also, with the housing, and the vacuum chamber, and the rotary shaft is electrically connected to each other, and may be grounded (claim 6). With such a configuration, it is possible to effectively prevent leakage of high-frequency power from a portion to which high-frequency power is applied, such as a power transmission structure, a conductive path, and a substrate holder. Therefore, it is possible to efficiently supply high-frequency power supplied from the high-frequency power source to the base material holder. Moreover, it is not necessary to use a dedicated housing cover for preventing leakage of high frequency power from the housing. Therefore, the structure and assemblability of the ion processing apparatus can be simplified.

Further, in the vacuum chamber, the ion processing may be performed by applying DC power from the DC power source to the base material holder together with the high-frequency power (Claim 7 ). With such a configuration, ions excited by plasma generated by high-frequency power can be accelerated toward the substrate by an electric field generated by applying DC power. As a result, the kinetic energy (collision energy) of ions when colliding with the surface of the substrate can be increased, and therefore, the processing characteristics of ion processing can be improved.

  The present invention is implemented in the form as described above, and provides an ion processing apparatus that has good durability over time and can efficiently transmit high-frequency power while having a relatively simple configuration. There is an effect that can be.

  The best mode for carrying out the invention will be described with reference to the drawings.

  FIG. 1 is a configuration diagram schematically showing a configuration of an ion processing apparatus according to an embodiment of the present invention. FIG. 2 is an enlarged configuration diagram showing the rotation driving unit and the power feeding unit of the ion processing apparatus shown in FIG. In the embodiment of the present invention, an ion plating apparatus is exemplified as the ion processing apparatus.

  First, the configuration of an ion plating apparatus according to an embodiment of the present invention will be outlined with reference to FIGS. 1 and 2.

  As shown in FIG. 1, in an ion plating apparatus 100, an evaporation source 2 for evaporating a thin film forming material is disposed inside a vacuum chamber 1 made of an electrically conductive material. A base material holder 5 made of the above material is disposed. Here, the evaporation source 2 is provided with a heating coil 3 connected to a heating power source 4 on the outer periphery of a boat 2a into which a thin film forming material is placed. On the other hand, as shown in FIGS. 1 and 2, a rotating shaft body 6 having a conductive member and an insulating member as a main body and having a rotating shaft 14 as a main body is connected to the back surface of the substrate holder 5. The rotary shaft body 6 is disposed so as to extend outside through the wall portion 1a of the vacuum chamber 1, and a portion (hereinafter referred to as a protrusion) from the wall portion 1a to the tip of the rotary shaft body 6 is The rotary drive device 7 is arranged so as to be rotationally driven. The rotation drive device 7 is disposed at a predetermined position on the wall 1 a of the vacuum chamber 1.

  Further, as shown in FIG. 2, the carbon brush 8a (second power supply member), which is a power transmission structure, is in direct contact with the electrode ring 25 (first power supply member) provided on the protruding portion of the rotating shaft 6. In addition, a power supply unit 8 is disposed. The power supply unit 8 is fixed to a top of an insulating plate 31 made of an insulating material such as a fluororesin by a predetermined fixing means. The insulating plate 31 for fixing the power supply unit 8 is fixed on the housing 9 by an insulating plate fixing member 27 fixed to the housing 9 by an insulating plate fixing member fixing bolt 27a. That is, as a result, the power feeding unit 8 and the housing 9 are held in an electrically insulated state. As shown in FIGS. 1 and 2, the power supply unit 8 is connected through a cable 10 to a DC blocking capacitor Co and a high frequency blocking choke coil Lo. Here, the DC blocking capacitor Co is connected to the high frequency power supply 12 via the matching circuit 11. The high frequency blocking choke coil Lo is connected to a DC power source 13. The predetermined terminal of the high frequency power supply 12, the positive terminal of the DC power supply 13, and the vacuum chamber 1 are each grounded.

  A housing 9 made of a conductive material is disposed so as to cover predetermined portions of the power supply unit 8 and the insulating plate 31, the protruding portion of the rotating shaft body 6, and the rotation driving device 7. Yes. The housing 9 has a substantially cylindrical shape with the upper end closed and the lower part opened, and is supported and fixed from below by the wall 1a of the vacuum chamber 1. The housing 9 is electrically connected to the vacuum chamber 1.

  Next, the configuration of the rotation drive unit and the power supply unit of the ion processing apparatus according to the embodiment of the present invention will be described in detail with reference to FIGS. 2, 3, and 4.

  As described above, FIG. 2 is an enlarged configuration diagram illustrating the rotation driving unit and the power feeding unit of the ion processing apparatus illustrated in FIG. FIG. 3 is a configuration diagram showing a cross-sectional configuration along the line III-III in FIG. FIG. 4 is an enlarged configuration diagram showing a part of the power feeding unit in FIG. In FIG. 3, in order to clarify the power feeding configuration, in addition to the cross-sectional configuration, a power feeding portion (8), a carbon brush (8a), and an insulating plate (31) are added.

  As shown in FIG. 2, the conductive substrate holder 5 is fixed in a conductive state to the conductive column 18 by the substrate holder fixing bolt 5a. The column 18 is fixed in a conductive state to the conductive lower ring 17 by a predetermined fixing means (not shown). Further, the lower ring 17 is fixed in an insulated state to the conductive upper ring 15 by a predetermined fixing means (not shown) through an insulating support column 16 (first insulating member) having electrical insulation. . The upper ring 15 is fixed to the lower end of the conductive rotating shaft 14 in a conductive state by a predetermined fixing means (not shown). The rotating shaft 14 has a hollow cylindrical shape.

  On the other hand, as shown in FIGS. 2 and 3, an insulating ring 24 (second insulating member) made of an insulating material such as a fluororesin is fitted on the outer periphery of the upper portion of the rotating shaft 14. The insulating ring 24 is integrally formed with a bottom 24a extending in a substantially horizontal direction and a wall 24b extending in a substantially vertical direction. A conductive electrode ring 25 is fitted on the outer periphery of the insulating ring 24. The electrode ring 25 is fixed on the outer periphery of the insulating ring 24 by a predetermined fixing means so that the lower end thereof is in contact with the upper surface of the bottom portion 24a. Here, the insulating ring 24 has its upper end face pressed against the rotating shaft 14 by the lower end of the spacer 26 fixed to the rotating shaft 14 by the spacer fixing bolt 26a. Is fixed.

  Further, as shown in FIG. 2, an electrode shaft 22 having conductivity is disposed so as to penetrate the electrode ring 25, the insulating ring 24, and the rotating shaft 14 in a substantially horizontal direction. The electrode shaft 22 is electrically connected to the electrode ring 25. On the contrary, the electrode shaft 22 is electrically insulated from the rotating shaft 14 by an electrode shaft cover 23 made of an electrically insulating material such as a fluororesin. And the upper end part of the electrode plate 19 which has a substantially rectangular shape is being fixed to the front-end | tip part of the electrode shaft 22 with the upper end fixing volt | bolt 19b in the conduction | electrical_connection state. The electrode plate 19 extends downward in the rotary shaft 14, passes through the upper ring 15, and has a lower end fixed to the electrode 17 a protruding from the lower ring 17 by a lower end fixing bolt 19 a in a conductive state. That is, by being configured in this way, the electrode ring 25 and the substrate holder 5 are held in an electrically conductive state, and the substrate holder 5, the rotating shaft 14, the housing 9, and the vacuum chamber 1 are electrically connected. In an electrically insulated state.

  As shown in FIGS. 2 and 4, the electrode plate 19 is covered with two electrode plate covers 20 having a predetermined shape and a predetermined shape. A predetermined portion of the electrode plate cover 20 that covers the electrode plate 19 is covered with a SUS plate cover 21. Thereby, the electrode plate 19, the rotating shaft 14, and the upper ring 15 are held in an electrically insulated state. Here, the SUS plate cover 21 is electrically connected to the upper ring 15. That is, the SUS plate cover 21 is also electrically connected to the rotating shaft 14 and the vacuum chamber 1. Therefore, the SUS plate cover 21 is grounded.

  As described above, the above-described rotary shaft body 6 mainly composed of the rotary shaft 14 is configured. The rotating shaft body 6 is rotatably fixed to the housing 9 by an upper bearing 28 a and a lower bearing 28 b disposed between the housing 9 and the rotating shaft 14. A plurality of oil seals 30 are provided between the rotary shaft 14 and the housing 9. Thereby, the inside of the vacuum chamber 1 is maintained in a predetermined vacuum state. A spur gear 29 is attached to a predetermined position of the rotary shaft 14 in the rotary shaft body 6. The spur gear 29 is screwed with a gear 7b constituting the rotation driving device 7, and the gear 7b is fixed to a rotating shaft extending from the motor 7a. That is, when the rotation drive device 7 is operated and the motor 7a is rotationally driven, the gear 7b is rotated, and the rotation shaft 14, that is, the rotation shaft body 6 is rotated by the rotation of the gear 7b. Here, the motor 7a is fixed to the motor fixing member 7c, and this motor fixing member 7c is fixed on the wall 1a of the vacuum chamber 1 by the motor fixing member fixing bolt 7e via the motor mount 7d. .

  Next, the operation of the ion plating apparatus configured as described above will be described with reference to FIGS.

  When performing ion processing using the ion plating apparatus 100, an operator attaches a substrate such as a glass substrate or a resin substrate to the substrate holder 5 before performing ion processing. Then, after mounting the base material on the base material holder 5, the inside of the vacuum chamber 1 is exhausted to a predetermined vacuum atmosphere by an exhaust means (not shown), and the rotation drive device 7 is operated to rotate the motor 7a. Then, the rotation of the motor 7a is transmitted to the spur gear 29 via the gear 7b, and the spur gear 29 rotates, whereby the rotating shaft 14, that is, the rotating shaft body 6, rotates about the rotation center c as the rotation center. Thereby, the base material holder 5 attached to the lower end of the rotating shaft body 6 rotates. On the other hand, the high frequency power supply 12 and the DC power supply 13 are operated. Then, high frequency power and direct current power are supplied to the power supply unit 8 via the cable 10, whereby high frequency power and direct current power are applied to the carbon brush 8 a and further transmitted to the electrode ring 25 in contact with the carbon brush 8 a. The The high frequency power and DC power transmitted to the electrode ring 25 are transmitted to the electrode plate 19 through the electrode shaft 22, and further transmitted to the lower ring 17 through the electrode 17 a. Then, the high frequency power and DC power transmitted to the lower ring 17 are transmitted to the base material holder 5 through the support column 18. Thereby, high frequency power and direct current power are applied between the substrate holder 5 and the vacuum chamber 1. Next, the heating power supply 4 is operated. Then, high frequency power is supplied to the heating coil 3, and the thin film forming material put in the boat 2 a of the evaporation source 2 is heated and melted to evaporate into the vacuum chamber 1. Then, the evaporated thin film forming material is excited by the plasma generated by the high frequency power, and this excited thin film forming material is accelerated by the electric field generated by the DC power, and collides with and adheres to the surface of the base material. Thereby, a dense thin film is formed on the surface of the substrate.

  By using the ion plating apparatus of the present invention configured and operating as described above, the following effects can be obtained.

  The electrode ring 25 is electrically insulated from the rotating shaft 14 by an insulating ring 24, the electrode shaft 22 is electrically insulated from the rotating shaft 14 by an electrode shaft cover 23, and the electrode plate 19 is an electrode. The plate cover 20 is electrically completely insulated from the rotating shaft 14, and the lower ring 17 is electrically insulated from the upper ring 15 by the insulating support 16, so that the rotating shaft 14 receives high frequency power and direct current power. Power is not supplied. Accordingly, high frequency power and DC power are not fed to the housing 9 that is in conduction with the rotary shaft 14 via the upper bearing 28a and the lower bearing 28b. Therefore, the upper bearing 28a and the lower bearing 28b that support the rotating shaft 14 do not need to use an electrically insulating bearing made of a material such as a fluororesin, and sufficient machines that have been used favorably from the past. A metal bearing having a sufficient strength can be used. Therefore, it is possible to prevent the occurrence of problems related to the durability over time of the ion processing apparatus.

  When the rotating shaft 14 is supported using the upper bearing 28a and the lower bearing 28b having metal bearings, the housing 9 that covers the rotating shaft 14 and the rotation driving device 7 is connected to the rotating shaft 14 via the bearing. However, since the high frequency power and the bias voltage are not applied to the rotating shaft 14 as described above, the high frequency power and the bias voltage are not applied to the housing 9 as well. In this case, since the housing 9 is grounded via the vacuum chamber 1, it functions as an electromagnetic shield. Therefore, leakage of high frequency power is completely blocked by the housing 9. That is, since the housing 9 functions as a housing cover that prevents leakage of high-frequency power, it is not necessary to use a housing cover. Therefore, it is possible to completely prevent leakage of high-frequency power and to simplify the structure and assemblability of the ion processing apparatus. In addition, the ion processing apparatus can be downsized.

  In the ion plating apparatus 100, the carbon brush 8 a is in electrical contact with the electrode ring 25, so that power from the high frequency power source 12 and the DC power source 13 is supplied to the substrate holder 5. Therefore, the power transmission structure according to the present invention can be realized by a simple configuration related to power transmission that has been conventionally used.

  A groove formed by the bottom 24a, the wall 24b and the electrode ring 25 is provided below the surface where the carbon brush 8a and the electrode ring 25 are in electrical contact. Therefore, shavings generated by the wear of the carbon brush 8 a when the electrode ring 25 rotates are collected in the groove, and the shavings are prevented from being scattered inside the vacuum chamber 1. Further, since the shavings are prevented from adhering to the upper bearing 28a, the rotating shaft 14 can be always rotated smoothly. Therefore, the shavings of the carbon brush 8a do not adversely affect the film formation characteristics, and it is possible to realize good film formation characteristics.

  Further, in the hollow portion of the rotating shaft 14, the electrode plate 19 that transmits high-frequency power and the like disposed in the vicinity of the rotating shaft 14 and the rotating shaft 14 include an electrode plate cover 20 (insulator) and a SUS plate cover. And 21 are electrically insulated. Therefore, electrical insulation between the electrode plate 19 and the rotary shaft 14 is completely performed. On the other hand, since the electrode plate 19 is formed to be long enough to correspond to the substantially entire length of the rotating shaft 14, the electrode plate 19 and the rotating shaft 14 are insulated only by an inorganic electrical insulating member such as insulator 20. There is a possibility that a capacitor having a capacitance proportional to the area of the electrode plate 19 is formed. Then, when high frequency power or the like is supplied to the electrode plate 19 and electric charges are accumulated in the formed capacitor, and the electric charges are released from the capacitors, there is a possibility that, for example, the motor 7a is damaged due to the discharge of the electric charges. is there. However, since the electrode plate cover 20 surrounding the electrode plate 19 is surrounded by the SUS plate cover 21 and the SUS plate cover 21 is grounded, the capacitor is not formed. Therefore, it becomes possible to prevent damage to the motor 7a inexpensively and effectively.

  In the ion plating apparatus 100 according to the present invention, the vacuum chamber 1 and the housing 9 are directly connected, and the housing 9 and the rotating shaft 14 are connected via the upper bearing 28a and the lower bearing 28b. 14 and the SUS plate cover 21 are electrically connected to each other and grounded via the upper ring 15. That is, the vacuum chamber 1, the housing 9, the rotating shaft 14, and the SUS plate cover 21 block the leakage of the high frequency power against the leakage of the high frequency power generated due to the high frequency power output from the high frequency power supply 12. It functions as an electromagnetic shield. Therefore, it is possible to effectively cut off the high frequency power leaking from the portions to which the high frequency power is fed, such as the carbon brush 8a, the electrode ring 25, the electrode shaft 22, the electrode plate 19, the lower ring 17, and the base material holder 5. become. Thereby, the high frequency power supplied from the high frequency power supply 12 can be efficiently supplied to the substrate holder 5.

  Further, when ion processing is performed by applying the DC power output from the DC power source 13 to the substrate holder 5 together with the high frequency power output from the high frequency power source 12 inside the vacuum chamber 1, the inside of the vacuum chamber 1 is generated by the high frequency power. It is possible to accelerate ions excited by the generated plasma toward the substrate by an electric field generated by applying DC power. As a result, the kinetic energy (collision energy) of ions when colliding with the surface of the substrate can be increased, so that the processing characteristics of ion processing can be dramatically improved.

  In the above description, the electric insulation between the electrode plate 19 and the rotating shaft 14 is performed by using the electrode plate cover 20 and the SUS plate cover 21. For example, the inside of the rotating shaft 14 has a low dielectric constant. It may be filled with an insulating resin or air, and the conductive member may be inserted through the low dielectric constant insulating resin or air. In this case, it is desirable to dispose the conductive member at the position of the rotation center c of the rotary shaft 14 in order to ensure a sufficient interval between the conductive member and the rotary shaft 14. Even with such a configuration, the conductive member and the rotary shaft 14 can be electrically completely insulated. In addition, since the conductive member and the rotary shaft 14 are insulated and isolated by a low dielectric constant insulating resin or air, the capacitance of the formed capacitor can be significantly reduced. For this reason, it is possible to substantially prevent the motor 7a from being damaged by the discharge of the capacitor.

  In the above description, the ion plating apparatus is illustrated as an example of the ion processing apparatus. However, the ion plating apparatus is not limited to this ion plating apparatus, and the film forming apparatus that applies high-frequency power to the substrate holder in general. The present invention can be implemented or applied in For example, apparatuses that can implement or apply the present invention include CVD (Chemical Vapor Deposition), an etching apparatus, and the like. In CVD, it is known to form a film by exciting the source gas with plasma generated by high-frequency power for the purpose of accelerating the reaction of the source gas for forming a thin film as a processing substance (plasma CVD). In the etching apparatus, for the purpose of increasing the etching selectivity or obtaining anisotropy, etching is performed by exciting a reaction gas (etching gas), which is a processing substance that reacts with the substrate, with plasma. Is known (plasma etching). Thus, in this technical field as well, there is essentially no difference from an ion plating apparatus in that plasma is generated using high-frequency power and the substrate is processed using the generated plasma. Therefore, the present invention can be implemented or applied to the apparatus in the technical field.

  The ion processing apparatus according to the present invention is useful as a film forming apparatus for forming an optical film such as antireflection by laminating a thin film on the surface of a glass substrate or a resin substrate.

It is a block diagram which shows typically the structure of the ion processing apparatus which concerns on embodiment of this invention. It is a block diagram which expands and shows the rotational drive part and electric power feeding part of the ion processing apparatus shown in FIG. It is a block diagram which shows the cross-sectional structure along the III-III line in FIG. It is a block diagram which expands and shows a part of electric power feeding part in FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Vacuum chamber 1a Wall part 2 Evaporation source 2a Boat 3 Heating coil 4 Heating power supply 5 Base material holder 5a Base material holder fixing bolt 6 Rotating shaft 7 Rotation drive device 7a Motor 7b Gear 7c Motor fixing member 7d Motor mount 7e Motor Fixing member fixing bolt 8 Feeding part 8a Carbon brush 9 Housing 10 Cable 11 Matching circuit 12 High frequency power supply 13 DC power supply 14 Rotating shaft 15 Upper ring 16 Insulating post 17 Lower ring 17a Electrode 18 Post 19 Electrode plate 19a Lower end fixing bolt 19b Upper end fixing bolt 20 Electrode plate cover 21 SUS plate cover 22 Electrode shaft 23 Electrode shaft cover 24 Insulating ring 24a Bottom 24b Wall 25 Electrode ring 26 Spacer 26a Spacer fixing bolt 27 Insulating plate fixing member 27a Insulating plate fixing member Fixing bolt 28a Upper bearing 28b Lower bearing 29 Spur gear 30 Oil seal 31 Insulating plate 100 Ion plating device c Center of rotation

Claims (7)

A conductive vacuum chamber for performing ion processing on the substrate using high-frequency power therein, and
A conductive substrate holder disposed in the vacuum chamber and mounted with the substrate;
A conductive rotating shaft that penetrates the wall of the vacuum chamber, has an inner end connected to the substrate holder via a first insulating member, and is rotatably held in the vacuum chamber. When,
A first power supply member formed to be insulated from the rotary shaft at a portion located outside the vacuum chamber of the rotary shaft, and a second for transmitting the high-frequency power to the first power supply member A power transmission structure having a power supply member;
A conductive path insulated from the rotary shaft from the base material holder through the rotary shaft to the first feeding member;
A high frequency power source connected to the second power supply member for supplying the high frequency power;
Rotating means for rotating the rotating shaft ,
An ion processing apparatus , wherein at least a portion of the conductive path passing through the rotating shaft is surrounded by an inorganic electrical insulating member, the inorganic electrical insulating member is surrounded by a metal plate, and the metal plate is grounded . The ion processing apparatus according to claim 1, wherein the rotating shaft has a hollow portion, and the conductive path is formed in the hollow portion. The first power supply member is a cylindrical conductor, the second power supply member is a brush, and the high-frequency power is transmitted so that the brush is in electrical contact with the cylindrical conductor. The ion processing apparatus according to claim 1. A second insulating member that insulates the rotating shaft from the first power supply member, and the second insulating member is generated by contact between the first power supply member and the second power supply member; The ion processing apparatus according to claim 1, wherein the ion processing apparatus is configured to collect dust. A housing formed to substantially cover at least a portion of the rotating shaft located outside the vacuum chamber, the power transmission structure, and the rotating means, and the housing is supported by the vacuum chamber; The ion processing apparatus according to claim 1, wherein the rotation shaft is rotatably held by the housing. The ion processing apparatus according to claim 5 , wherein the housing, the vacuum chamber, and the rotating shaft are electrically connected to each other and grounded. The inside of the vacuum chamber, the DC power from the DC power source with the high-frequency power is the ion processing is applied to the substrate holder is performed, the ion processing apparatus according to claim 1 to 6, wherein.

Images