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JP4414185B2 - Light emitting diode and manufacturing method thereof - Google Patents
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JP4414185B2 - Light emitting diode and manufacturing method thereof - Google Patents

Light emitting diode and manufacturing method thereof Download PDF

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JP4414185B2
JP4414185B2 JP2003336999A JP2003336999A JP4414185B2 JP 4414185 B2 JP4414185 B2 JP 4414185B2 JP 2003336999 A JP2003336999 A JP 2003336999A JP 2003336999 A JP2003336999 A JP 2003336999A JP 4414185 B2 JP4414185 B2 JP 4414185B2
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led chip
lead terminal
led
glass
glass tube
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JP2005108936A (en
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俊男 嶋田
洋美 古賀
陽弘 加藤
利夫 中條
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Okaya Electric Industry Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5366—Shapes of wire connectors the bond wires having kinks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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Description

この発明は発光ダイオード（ＬＥＤ）及びその製造方法に係り、特に、ガラス管の開口部を溶融封止して形成した気密容器内にＬＥＤチップを封入して成る発光ダイオードとその製造方法に関する。   The present invention relates to a light emitting diode (LED) and a method for manufacturing the same, and more particularly to a light emitting diode in which an LED chip is sealed in an airtight container formed by melting and sealing an opening of a glass tube and a method for manufacturing the same.

この種発光ダイオードとして、本出願人である岡谷電機産業株式会社は、先に、特願２００２−２２７８０３号を提案した。
図８に示すように、この発光ダイオード70は、ＬＥＤチップ搭載用の第１のリードフレーム72の先端部72ａに、その底面から上方に向かって孔径が徐々に拡大する略漏斗形状の凹部を設けると共に該凹部内面を反射面と成してリフレクタ74を形成し、該リフレクタ74の底面上にＬＥＤチップ76をＡｇペースト等を介してダイボンドにより接続固定し、以て、上記第１のリードフレーム72と、ＬＥＤチップ76底面の一方の電極（図示せず）とを電気的に接続している。また、第２のリードフレーム78の先端部78ａと、上記ＬＥＤチップ76上面の他方の電極（図示せず）とをボンディングワイヤ80を介して電気的に接続して成る。 As this kind of light emitting diode, Okaya Electric Industrial Co., Ltd., the present applicant, previously proposed Japanese Patent Application No. 2002-227803.
As shown in FIG. 8, the light emitting diode 70 is provided with a substantially funnel-shaped recess whose diameter gradually increases upward from the bottom surface of the leading end 72a of the first lead frame 72 for mounting the LED chip. At the same time, a reflector 74 is formed by forming the inner surface of the concave portion as a reflecting surface, and the LED chip 76 is connected and fixed to the bottom surface of the reflector 74 by die bonding via Ag paste or the like. And one electrode (not shown) on the bottom surface of the LED chip 76 are electrically connected. Further, the tip end portion 78 a of the second lead frame 78 and the other electrode (not shown) on the upper surface of the LED chip 76 are electrically connected via a bonding wire 80.

図８において、82は、先端に略半球面を有すると共に、下端に開口部を有する略ドーム状の透光性を備えたガラス管の開口部を封止して形成した気密容器であり、該ガラス製の気密容器82内に、上記ＬＥＤチップ76、第１のリードフレーム72の先端部72ａ及び端子部72ｂの上端、第２のリードフレーム78の先端部78ａ及び端子部78ｂの上端が封入されている。
また、上記第１のリードフレーム72の端子部72ｂ及び第２のリードフレーム78の端子部78ｂの下端は、上記気密容器82の封止部82ａを貫通して外部へと導出されている。 In FIG. 8, 82 is an airtight container formed by sealing the opening of a glass tube having a substantially dome-like translucency having a substantially hemispherical surface at the tip and an opening at the bottom, A glass hermetic container 82 encloses the LED chip 76, the top ends 72a and 72b of the first lead frame 72, and the top ends 78a and 78b of the second lead frame 78. ing.
Further, the lower ends of the terminal portion 72b of the first lead frame 72 and the terminal portion 78b of the second lead frame 78 are led out through the sealing portion 82a of the hermetic container 82.

而して、上記第１のリードフレーム72及び第２のリードフレーム78を介してＬＥＤチップ76に電圧が印加されると、ＬＥＤチップ76が発光して光が放射され、放射された光は、気密容器82を透過し、外部へ放射されるようになっている。
上記ＬＥＤ70にあっては、ガラス製の気密容器82内にＬＥＤチップ76を封入しているので、空気中の水分が、ガラス製の気密容器82表面から浸透してＬＥＤ70内部へ浸入することがなく、耐湿性に優れている。 Thus, when a voltage is applied to the LED chip 76 through the first lead frame 72 and the second lead frame 78, the LED chip 76 emits light and emits light. The gas passes through the airtight container 82 and is radiated to the outside.
In the LED 70, since the LED chip 76 is enclosed in the glass hermetic container 82, moisture in the air does not permeate from the surface of the glass hermetic container 82 and enter the LED 70. Excellent in moisture resistance.

上記ＬＥＤ70は、以下の方法により製造される。
先ず、第１のリードフレーム72の先端部72ａに形成したリフレクタ74の底面上に、ＬＥＤチップ76をＡｇペースト等を介してダイボンドした後、ボンディングワイヤ80を介して第２のリードフレーム78の先端部78ａとＬＥＤチップ76とを接続する。
次に、第１のリードフレーム72及び第２のリードフレーム78の端子部72ｂ，78ｂ中途部に溶融したガラスを付着させてガラスビーズ83を形成する（図９参照）。この結果、第１のリードフレーム72の端子部72ｂと第２のリードフレーム78の端子部78ｂとが、ガラスビーズ83によって結束される。 The LED 70 is manufactured by the following method.
First, the LED chip 76 is die-bonded via Ag paste or the like on the bottom surface of the reflector 74 formed at the distal end portion 72a of the first lead frame 72, and then the distal end of the second lead frame 78 via the bonding wire 80. The portion 78a and the LED chip 76 are connected.
Next, a glass bead 83 is formed by adhering molten glass to the middle portions of the terminal portions 72b and 78b of the first lead frame 72 and the second lead frame 78 (see FIG. 9). As a result, the terminal portion 72 b of the first lead frame 72 and the terminal portion 78 b of the second lead frame 78 are bound by the glass beads 83.

次に、図９に示すように、先端に略半球面を有すると共に、下端に開口部を有し、上記気密容器82の元となるガラス管84内に、上記ガラスビーズ83を形成した第１のリードフレーム72及び第２のリードフレーム78を開口部から挿入する。
次に、図９に示すように、ガラス管84表面におけるガラスビーズ83に対応する部分をバーナ86で加熱溶融させ、ガラス管84とガラスビーズ83とを融着させる。この結果、ガラス管84の開口部が気密に封止され、上記気密容器84が形成される。
最後に、ガラス管84、第１のリードフレーム72及び第２のリードフレーム78の端子部72ｂ，78ｂの余計な部分を切除すれば、上記ＬＥＤ70が完成する。 Next, as shown in FIG. 9, the first glass beads 83 are formed in a glass tube 84 having a substantially hemispherical surface at the front end and an opening at the lower end and serving as a base of the airtight container 82. The lead frame 72 and the second lead frame 78 are inserted from the opening.
Next, as shown in FIG. 9, the portion corresponding to the glass beads 83 on the surface of the glass tube 84 is heated and melted by the burner 86, and the glass tube 84 and the glass beads 83 are fused. As a result, the opening of the glass tube 84 is hermetically sealed, and the airtight container 84 is formed.
Finally, if the unnecessary portions of the terminal portions 72b and 78b of the glass tube 84, the first lead frame 72, and the second lead frame 78 are removed, the LED 70 is completed.

ところで、上記ＬＥＤチップ76の耐熱温度は約２８０℃〜３５０℃程度であり、約２８０℃〜３５０℃以上の温度で数秒〜数分間以上加熱されるとＬＥＤチップ76は熱劣化を生じる可能性が非常に高い。
しかしながら、上記ＬＥＤ70の製造工程において、ガラス管84とガラスビーズ83とを融着させて気密容器82を形成する際の加熱温度は約８００℃〜１０００℃程度であるため、加熱時間、その他の製造条件の設定如何によっては、第１のリードフレーム72を通じて高熱がＬＥＤチップ76に直接的に伝導し、ＬＥＤチップ76の熱劣化を生じることがあった。 By the way, the heat-resistant temperature of the LED chip 76 is about 280 ° C. to 350 ° C., and when the LED chip 76 is heated at a temperature of about 280 ° C. to 350 ° C. for several seconds to several minutes or more, the LED chip 76 may be thermally deteriorated. Very expensive.
However, since the heating temperature when forming the airtight container 82 by fusing the glass tube 84 and the glass beads 83 in the manufacturing process of the LED 70 is about 800 ° C. to 1000 ° C., the heating time and other manufacturing Depending on the setting of the conditions, high heat may be directly conducted to the LED chip 76 through the first lead frame 72, resulting in thermal deterioration of the LED chip 76.

この発明は、従来の上記問題点に鑑みて案出されたものであり、その目的とするところは、ガラス管の開口部を溶融封止して気密容器を形成する際の高熱によるＬＥＤチップの熱劣化の発生を防止できる発光ダイオードと、該発光ダイオードの製造方法を実現することにある。   The present invention has been devised in view of the above-described problems of the related art, and the object of the present invention is to provide an LED chip with high heat when an airtight container is formed by melting and sealing an opening of a glass tube. The object is to realize a light emitting diode capable of preventing the occurrence of thermal degradation and a method for manufacturing the light emitting diode.

上記の目的を達成するため、本発明に係る発光ダイオードは、セラミック又はガラスより成る基板上にＬＥＤチップを配置すると共に、該ＬＥＤチップとリード端子とを電気的に接続し、さらに、上記ＬＥＤチップ、基板、及びリード端子の上端を、ガラス管の開口部を溶融封止して形成した気密容器内に封入したことを特徴とする。 In order to achieve the above object, a light emitting diode according to the present invention has an LED chip disposed on a substrate made of ceramic or glass , and electrically connects the LED chip and a lead terminal. The upper ends of the substrate and the lead terminal are sealed in an airtight container formed by melting and sealing the opening of the glass tube.

また、本発明に係る発光ダイオードの製造方法は、セラミック又はガラスより成る基板上にＬＥＤチップを配置する工程と、上記ＬＥＤチップとリード端子とを電気的に接続する工程と、上記ＬＥＤチップ、基板、及びリード端子の上端を、開口部を有するガラス管内に配置した後、ガラス管の開口部を溶融封止して気密容器を形成する工程とを少なくとも備えていることを特徴とする。 The method of manufacturing a light emitting diode according to the present invention includes a step of arranging an LED chip on a substrate made of ceramic or glass, a step of electrically connecting the LED chip and a lead terminal, and the LED chip and the substrate. And the step of disposing the upper end of the lead terminal in a glass tube having an opening and then melting and sealing the opening of the glass tube to form an airtight container.

本発明の発光ダイオードにあっては、ＬＥＤチップをセラミック又はガラスより成る基板上に配置したので、ガラス管の開口部を溶融封止して気密容器を形成する際の高熱が、リード端子を通じてＬＥＤチップに直接的に伝導することが防止され、その結果、ＬＥＤチップの熱劣化の発生を防止することができる In the light emitting diode of the present invention, since the LED chip is disposed on the substrate made of ceramic or glass , the high heat generated when the hermetic container is formed by melting and sealing the opening of the glass tube causes the LED to pass through the lead terminal. Direct conduction to the chip is prevented, and as a result, the occurrence of thermal degradation of the LED chip can be prevented.

以下、図面に基づき、本発明に係るＬＥＤの実施形態を説明する。
図１及び図２は、それぞれ本発明に係るＬＥＤ10を示す概略断面図、概略平面図であり、このＬＥＤ10は、熱伝導率の小さいセラミックやガラス等の絶縁性材料より成る略円盤状の基板12を備えており、該基板12に形成した一対の孔14ａ，14ｂに、第１のリード端子16、第２のリード端子18を挿通して成る。
上記基板12表面には、相互に絶縁された第１の導体パターン20、第２の導体パターン22が形成されている。これら導体パターン20，22は、金等の導電材料を印刷、メッキ等することにより形成される。
また、上記第１のリード端子16、第２のリード端子18の先端部16ａ，18ａを、上記孔14ａ，14ｂから若干突出させると共に略直角方向へ折り曲げ、加重・加熱することにより、第１のリード端子16の先端部16ａを第１の導体パターン20に接続し、第２のリード端子18の先端部18ａを第２の導体パターン22に接続している。 Hereinafter, embodiments of the LED according to the present invention will be described with reference to the drawings.
FIGS. 1 and 2 are a schematic sectional view and a schematic plan view, respectively, showing an LED 10 according to the present invention. This LED 10 is a substantially disk-shaped substrate 12 made of an insulating material such as ceramic or glass having a low thermal conductivity. The first lead terminal 16 and the second lead terminal 18 are inserted into a pair of holes 14a and 14b formed in the substrate 12.
A first conductor pattern 20 and a second conductor pattern 22 which are insulated from each other are formed on the surface of the substrate 12. These conductor patterns 20 and 22 are formed by printing, plating or the like using a conductive material such as gold.
Further, the first lead terminal 16 and the distal end portions 16a, 18a of the second lead terminal 18 are slightly projected from the holes 14a, 14b, bent in a substantially right angle direction, and subjected to weighting / heating to thereby provide a first. The leading end portion 16 a of the lead terminal 16 is connected to the first conductor pattern 20, and the leading end portion 18 a of the second lead terminal 18 is connected to the second conductor pattern 22.

さらに、上記基板12の略中央位置の第２の導体パターン22上に、ＬＥＤチップ24を、共昌ハンダやＡｇペースト等の導電性ペーストを介してダイボンドすることにより、ＬＥＤチップ24底面の一方の電極（図示せず）と第２の導体パターン22とを電気的に接続している。また、ＬＥＤチップ24上面の他方の電極（図示せず）と第１の導体パターン20とを、ボンディングワイヤ26を介して電気的に接続している。
この結果、第２の導体パターン22を介して、ＬＥＤチップ24底面の一方の電極と第２のリード端子18との電気的接続が実現されると共に、ボンディングワイヤ26及び第１の導体パターン20を介して、ＬＥＤチップ24上面の他方の電極と第１のリード端子16との電気的接続が実現される。
上記ＬＥＤチップ22は、窒化ガリウム系半導体結晶等で構成されている。また、上記第１のリード端子16及び第２のリード端子18は、金メッキを施したジュメット線で構成されている。 Further, the LED chip 24 is die-bonded on the second conductor pattern 22 at a substantially central position of the substrate 12 via a conductive paste such as Kyodo solder or Ag paste, thereby providing one of the bottom surfaces of the LED chip 24. An electrode (not shown) and the second conductor pattern 22 are electrically connected. Further, the other electrode (not shown) on the upper surface of the LED chip 24 and the first conductor pattern 20 are electrically connected via a bonding wire 26.
As a result, electrical connection between one electrode on the bottom surface of the LED chip 24 and the second lead terminal 18 is realized via the second conductor pattern 22, and the bonding wire 26 and the first conductor pattern 20 are connected to each other. Accordingly, electrical connection between the other electrode on the upper surface of the LED chip 24 and the first lead terminal 16 is realized.
The LED chip 22 is made of a gallium nitride based semiconductor crystal or the like. Further, the first lead terminal 16 and the second lead terminal 18 are composed of a gold-plated jumet wire.

図１において、28は、ガラス管の開口部を封止して形成した気密容器であり、該ガラス製の気密容器28内に、上記基板12、ＬＥＤチップ24、第１のリード端子16の上端、第２のリード端子18の上端が封入されている。また、上記第１のリード端子16の下端16ｂ及び第２のリード端子18の下端18ｂは、上記気密容器28の封止部28ａを貫通して外部へと導出されている。
上記気密容器28の先端は、略半球状のレンズ部30と成されている。 In FIG. 1, reference numeral 28 denotes an airtight container formed by sealing an opening of a glass tube. Inside the glass airtight container 28, the upper ends of the substrate 12, the LED chip 24, and the first lead terminal 16 are shown. The upper end of the second lead terminal 18 is enclosed. The lower end 16b of the first lead terminal 16 and the lower end 18b of the second lead terminal 18 pass through the sealing portion 28a of the hermetic container 28 and are led out to the outside.
The tip of the airtight container 28 is formed with a substantially hemispherical lens portion 30.

而して、上記ＬＥＤ10にあっては、第１のリード端子16及び第２のリード端子18を介してＬＥＤチップ24に電圧が印加されると、ＬＥＤチップ24が発光して所定波長の光が放射され、放射された光は、気密容器28を透過し、外部へ放射されるようになっている。   Thus, in the LED 10, when a voltage is applied to the LED chip 24 via the first lead terminal 16 and the second lead terminal 18, the LED chip 24 emits light and light of a predetermined wavelength is emitted. The emitted light is transmitted through the airtight container 28 and emitted to the outside.

次に、上記ＬＥＤ10の製造方法を、図３乃至図７に基づいて説明する。
先ず、基板12に形成された第２の導体パターン22上に、ＬＥＤチップ24をＡｇペースト等の導電性ペーストを介してダイボンドし（図３参照）、その後、ボンディングワイヤ26を介して、ＬＥＤチップ24と第１の導体パターン20とを接続する（図示省略）。 Next, a method for manufacturing the LED 10 will be described with reference to FIGS.
First, the LED chip 24 is die-bonded on the second conductor pattern 22 formed on the substrate 12 via a conductive paste such as Ag paste (see FIG. 3), and then the LED chip is bonded via the bonding wire 26. 24 and the first conductor pattern 20 are connected (not shown).

また、ジュメット線より成る第１のリード端子16及び第２のリード端子18の中途部に溶融したガラスを付着させてガラスビーズ32を形成する（図４）。この結果、第１のリード端子16と第２のリード端子18とが、ガラスビーズ32によって結束される。
その後、第１のリード端子16及び第２のリード端子18の表面に、金メッキを施す。 Further, glass beads 32 are formed by adhering molten glass to the middle portions of the first lead terminal 16 and the second lead terminal 18 made of dumet wires (FIG. 4). As a result, the first lead terminal 16 and the second lead terminal 18 are bound by the glass beads 32.
Thereafter, gold plating is applied to the surfaces of the first lead terminal 16 and the second lead terminal 18.

次に、基板12に形成した一対の孔14ａ，14ｂに、第１のリード端子16、第２のリード端子18を挿通し（図５）、第１のリード端子16及び第２のリード端子18の先端部16ａ，18ａを、上記孔14ａ，14ｂから若干突出させた状態で略直角方向へ折り曲げ、第１のリード端子16の先端部16ａと第１の導体パターン20、第２のリード端子18の先端部18ａと第２の導体パターン22とを所定温度で熱圧着する。   Next, the first lead terminal 16 and the second lead terminal 18 are inserted into the pair of holes 14a and 14b formed in the substrate 12 (FIG. 5), and the first lead terminal 16 and the second lead terminal 18 are inserted. The front end portions 16a and 18a of the first lead terminal 16 are bent in a substantially right angle direction while slightly protruding from the holes 14a and 14b, and the first lead terminal 16 front end portion 16a, the first conductor pattern 20, and the second lead terminal 18 are bent. The tip 18a and the second conductor pattern 22 are thermocompression bonded at a predetermined temperature.

また、図６に示すように、気密容器28の基となる両端が開口した１本の細長いガラス管34を用意し、該ガラス管34の中途部をバーナ36で加熱溶融しつつ、上記略半球状のレンズ部28が形成されるよう肉厚に封じ切る。この結果、先端に略半球状のレンズ部30を有するガラス管34が形成される（図７参照）。
次に、図７に示すように、ガラス管34内に、上記ガラスビーズ32を形成した第１のリード端子16及び第２のリード端子18をガラス管34の下端開口部から挿入し、上記基板12、ＬＥＤチップ24、第１のリード端子16及び第２のリード端子18の上端をガラス管34内の所定位置に配置する。
次に、ガラス管34表面におけるガラスビーズ32に対応する部分をバーナ36で加熱溶融させ、ガラス管34とガラスビーズ32とを融着させる。この結果、ガラス管34の開口部が気密に封止され、上記気密容器28が形成される。
最後に、気密容器28より下方のガラス管34を切除すれば、上記ＬＥＤ10が完成する。 Further, as shown in FIG. 6, one elongated glass tube 34 having both ends opened as a base of the airtight container 28 is prepared, and the middle portion of the glass tube 34 is heated and melted by a burner 36, and the substantially hemisphere is The lens portion 28 is sealed to a thickness so that the lens portion 28 is formed. As a result, a glass tube 34 having a substantially hemispherical lens portion 30 at the tip is formed (see FIG. 7).
Next, as shown in FIG. 7, the first lead terminal 16 and the second lead terminal 18 in which the glass beads 32 are formed are inserted into the glass tube 34 from the lower end opening of the glass tube 34, and the substrate 12. The upper ends of the LED chip 24, the first lead terminal 16 and the second lead terminal 18 are arranged at predetermined positions in the glass tube 34.
Next, the portion corresponding to the glass beads 32 on the surface of the glass tube 34 is heated and melted by the burner 36, and the glass tube 34 and the glass beads 32 are fused. As a result, the opening of the glass tube 34 is hermetically sealed, and the hermetic container 28 is formed.
Finally, if the glass tube 34 below the hermetic container 28 is cut out, the LED 10 is completed.

上記した本発明のＬＥＤ10にあっては、ＬＥＤチップ24を熱伝導率の小さい材料より成る基板12上に配置したので、ガラス管34の開口部を溶融封止して気密容器28を形成する際の高熱が、リード端子16，18を通じてＬＥＤチップ24に直接的に伝導することが防止され、その結果、ＬＥＤチップ24の熱劣化の発生を防止することができる   In the LED 10 of the present invention described above, since the LED chip 24 is disposed on the substrate 12 made of a material having low thermal conductivity, the opening of the glass tube 34 is melt-sealed to form the hermetic container 28. Is prevented from being directly conducted to the LED chip 24 through the lead terminals 16 and 18, and as a result, the LED chip 24 can be prevented from being thermally deteriorated.

尚、上記リード端子16，18に代えて、上下方向に延びる本体部と、略水平に屈曲させると共に扁平状と成した先端部を有する一対のリード端子を用い、該リード端子の本体部を、基板12の側面に沿って配置すると共に、リード端子の先端部を、基板12上の導体パターン20，22に接続するにしても良い。
この場合には、基板12に上記孔14ａ，14ｂを形成する必要がなく、リード端子と基板12上の導体パターン20，22との接続が容易とある。 In place of the lead terminals 16, 18, a pair of lead terminals having a main body portion extending in the vertical direction and a tip portion that is bent substantially horizontally and formed into a flat shape are used. It may be arranged along the side surface of the substrate 12 and the tip of the lead terminal may be connected to the conductor patterns 20 and 22 on the substrate 12.
In this case, it is not necessary to form the holes 14a and 14b in the substrate 12, and the connection between the lead terminals and the conductor patterns 20 and 22 on the substrate 12 is easy.

本発明に係るＬＥＤの概略断面図である。It is a schematic sectional drawing of LED which concerns on this invention. 本発明に係るＬＥＤの概略平面図である。1 is a schematic plan view of an LED according to the present invention. 本発明に係るＬＥＤの製造方法を示す説明図である。It is explanatory drawing which shows the manufacturing method of LED which concerns on this invention. 本発明に係るＬＥＤの製造方法を示す説明図である。It is explanatory drawing which shows the manufacturing method of LED which concerns on this invention. 本発明に係るＬＥＤの製造方法を示す説明図である。It is explanatory drawing which shows the manufacturing method of LED which concerns on this invention. 本発明に係るＬＥＤの製造方法を示す説明図である。It is explanatory drawing which shows the manufacturing method of LED which concerns on this invention. 本発明に係るＬＥＤの製造方法を示す説明図である。It is explanatory drawing which shows the manufacturing method of LED which concerns on this invention. 従来のＬＥＤの概略断面図である。It is a schematic sectional drawing of conventional LED. 従来のＬＥＤの製造方法を示す説明図である。It is explanatory drawing which shows the manufacturing method of the conventional LED.

10 ＬＥＤ
12 基板
14ａ，14ｂ 孔
16 第１のリード端子
18 第２のリード端子
20 第１の導体パターン
22 第２の導体パターン
24 ＬＥＤチップ
28 気密容器
34 ガラス管 10 LED
12 Board
14a, 14b hole
16 First lead terminal
18 Second lead terminal
20 First conductor pattern
22 Second conductor pattern
24 LED chip
28 Airtight container
34 Glass tube

Claims (2)

セラミック又はガラスより成る基板上にＬＥＤチップを配置すると共に、該ＬＥＤチップとリード端子とを電気的に接続し、さらに、上記ＬＥＤチップ、基板、及びリード端子の上端を、ガラス管の開口部を溶融封止して形成した気密容器内に封入したことを特徴とする発光ダイオード。 An LED chip is disposed on a substrate made of ceramic or glass , and the LED chip and the lead terminal are electrically connected. Further, the upper end of the LED chip, the substrate, and the lead terminal is connected to the opening of the glass tube. A light-emitting diode sealed in an airtight container formed by melting and sealing. セラミック又はガラスより成る基板上にＬＥＤチップを配置する工程と、上記ＬＥＤチップとリード端子とを電気的に接続する工程と、上記ＬＥＤチップ、基板、及びリード端子の上端を、開口部を有するガラス管内に配置した後、ガラス管の開口部を溶融封止して気密容器を形成する工程とを少なくとも備えていることを特徴とする発光ダイオードの製造方法 A step of disposing an LED chip on a substrate made of ceramic or glass, a step of electrically connecting the LED chip and a lead terminal, and a glass having an opening at the upper end of the LED chip, the substrate and the lead terminal. A method of manufacturing a light emitting diode, comprising: at least a step of forming an airtight container by melting and sealing an opening of a glass tube after being disposed in the tube
JP2003336999A 2003-09-29 2003-09-29 Light emitting diode and manufacturing method thereof Expired - Fee Related JP4414185B2 (en)

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