JP4419662B2 - Solid-state imaging device and manufacturing method thereof - Google Patents

Description

  The present invention relates to a solid-state imaging device and a manufacturing method thereof, and more particularly to a single-plate color solid-state imaging device and a manufacturing method thereof.

  As the solid-state imaging device, a single-plate color CCD solid-state imaging device, a color CMOS solid-state imaging device, and the like are widely known. FIG. 11 shows an example of a schematic cross section of a conventional structure of a single-plate color CCD solid-state imaging device. In the single-plate color CCD solid-state imaging device 1, for example, the light receiving portions 3 serving as pixels are arranged in a matrix in the imaging region of the silicon semiconductor substrate 2, and the vertical transfer register 7 is formed corresponding to each light receiving portion row. Further, the color filter 12 and the on-chip lens 13 are formed on the imaging region via the planarizing film 11. The vertical transfer register 7 is configured by forming a transfer electrode 6 made of, for example, polycrystalline silicon via a gate insulating film 4 on a transfer channel region 4 formed on the surface of the substrate 2. On the surface of the substrate 2, a light shielding film 9 made of, for example, aluminum (Al) or tungsten (W) is formed in an area including the vertical transfer register 7 other than the light receiving portion 3 via the interlayer insulating film 8, and further plasma silicon A passivation film 10 made of a nitride film and a planarizing film 11 made of an insulating film are formed. A color filter 12 composed of each color filter component is formed on the planarizing film 11, and an on-chip lens 13 corresponding to each light receiving unit 3 is formed on the color filter 12.

  In the case of a single-plate color solid-state imaging device, the color filter 12 is formed on-chip, and the types are roughly classified into primary color systems and complementary color systems. The primary color system has good color reproducibility, and the complementary color system has a high transmittance of the color filter and is advantageous for sensitivity. The primary color filter and the complementary color filter are properly used according to the purpose. FIG. 11 shows an example of the primary color system filter 12, which has a red (R) filter component 12R, a green (G) filter component 12G, and a blue (B) filter component 12B. Further, there are various color arrangements of the filter 12, and representative examples of the primary color filter arrangement include G stripe RB line sequential, G checkered RB line sequential, RGB vertical stripe, and the like. On the other hand, the complementary color filter arrangement includes Ye, Cy, Mg, G color difference line sequential, Ye, G, Cy vertical stripes, W, Ye, Cy vertical stripes, and the like. Regardless of which color arrangement is adopted, in order to finally perform color separation into R / G / B, at least three colors are required, and generally one pixel is constituted by one color.

Patent Document 1 discloses a color linear image sensor that improves color mixing (so-called color shading) caused by light incident on a filter / pixel of a sensor obliquely as it approaches the both ends of the sensor.
JP-A-10-42097

By the way, in recent years, with the downsizing of camera sets using solid-state image sensors, as an optical lens arranged in front of the solid-state image sensor, the exit pupil distance (the distance between the aperture and the solid-state image sensor across the optical lens system). The short exit pupil lens, which is equivalent), is often used. However, when the short exit pupil lens is used, there is a concern that the shading characteristics of the CCD solid-state imaging device, that is, the luminance shading characteristics, the color shading characteristics, and the smear shading characteristics are deteriorated. In particular, as the cell size of one pixel is reduced from a 3 μm square to a 2.35 μm square recently, the shading characteristics have been significantly deteriorated, and this improvement is an urgent need. The optical condensing rate is different between the central portion and the peripheral portion of one chip, that is, the central portion and the peripheral portion of the effective imaging region, and usually the condensing rate is deteriorated in the peripheral portion.

Conventionally, in order to improve the shading characteristics, as shown in FIG. 12, the optical center of the on-chip lens 13 or the color filter 12 is shifted from the center of the light receiving unit 3 to the chip center side around the CCD solid-state imaging device. The exit pupil correction is performed. The exit pupil correction may be performed simultaneously with on-chip and color filters, and the correction value may be arbitrarily shifted. However, in any case, the change amount of the exit pupil distance is changed linearly (linearly) from the center toward the periphery (so-called chip end) as shown by the straight line II in FIG. However, recently, the use of aspherical lenses has increased in camera sets, particularly portable lens modules and small digital still cameras, and shading characteristics cannot be improved by correcting the pupil of the light receiving unit.

On the other hand, when a spherical lens is used, in principle, the amount of change in the exit pupil distance is linear (linear), but in reality it may not change linearly.

  In view of the above, the present invention provides a solid-state imaging device and a method for manufacturing the same that can improve the deterioration of shading characteristics, which is a problem particularly in a camera set using a short exit pupil lens.

Solid-state imaging device according to the present invention, corresponding to the aspherical short exit pupil lens of the camera set to be used, the exit pupil correction amount of the on-chip lens and the color filter with respect to the center of the light receiving portion, from the center of the effective image pickup area Change nonlinearly toward the periphery. Furthermore, the exit pupil correction amount differs between the on-chip lens and the color filter, and the exit pupil correction amount of the on-chip lens with respect to the center of the color filter is changed linearly or non-linearly. To do.

The present invention, in a solid-state imaging device can be configured to the exit pupil correction amount of the on-chip lens and the color filter and non-linear manner varied in either direction of vertical and horizontal directions of the effective image pickup area .
In the solid-state imaging device according to the present invention, the exit pupil correction amounts of the on-chip lens and the color filter can be changed concentrically and nonlinearly from the center to the effective imaging region.

The method for manufacturing a solid-state imaging device according to the present invention is applied to an aspherical short exit pupil lens of a camera set to be used when forming a color filter and an on-chip lens on an effective imaging region in which a plurality of light receiving units are arranged. in correspondence, nonlinear manner changes toward the periphery from the center of the exit pupil correction amount effective imaging area of the on-chip lens and the color filter with respect to the center of the light receiving portion, and the exit pupil correction amount, the on-chip lens and a color filter The color filter and the on-chip lens are formed so that the exit pupil correction amount of the on-chip lens with respect to the center of the color filter changes linearly or non-linearly .

The present invention is the manufacturing method of the solid-state imaging device, the on-chip lens and to change the non-linear manner in either direction of vertical and horizontal directions of the exit pupil correction amount effective imaging area of the color filter, a color filter And an on-chip lens can be formed.
According to the present invention, in the method for manufacturing a solid-state imaging device, the color filter and the on-chip lens are arranged so that the exit pupil correction amount of the on-chip lens and the color filter changes concentrically and nonlinearly from the center to the effective imaging region. Can be formed.

According to the solid-state imaging device according to the present invention, the exit pupil correction amounts of the on-chip lens and the color filter are nonlinear from the center to the periphery of the effective imaging region in correspondence with the short exit pupil lens of the camera set to be used. By changing to, good condensing can be obtained over the entire effective imaging region, and shading characteristics such as sensitivity shading, color shading, smear shading and the like in a camera set including a short exit pupil lens can be further improved.
In the present invention, it is possible to improve the deterioration of shading characteristics particularly when an aspheric lens is adopted as the short exit pupil lens. Furthermore, by making the exit pupil correction amount different between the on-chip lens and the color filter , the exit pupil correction can be finely adjusted, and the shading characteristics can be improved.

The exit pupil correction amount of the on-chip lens and the color filter, by a configuration in which a non-linear manner varied in either direction of vertical and horizontal directions of the effective image pickup area, it is possible to improve the shading characteristics. Even when the exit pupil correction amount of the on-chip lens and the color filter is configured to be changed concentrically and nonlinearly from the center to the effective imaging region, the shading characteristics can be improved.

According to the method for manufacturing a solid-state imaging device according to the present invention, the exit pupil correction amount of the on-chip lens and the color filter is directed from the center to the periphery of the effective imaging region in correspondence with the short exit pupil lens of the camera set to be used. By forming the color filter and the on-chip lens so as to change in a non-linear manner, good light collection can be obtained over the entire effective imaging region. Therefore, it is possible to manufacture a solid-state imaging device having improved shading characteristics such as sensitivity shading, color shading, and smear shading and having excellent reliability. Furthermore, by forming the color filter and on-chip lens so that the exit pupil correction amount differs between the on-chip lens and the color filter, the exit pupil correction can be finely adjusted, and the shading characteristics can be improved. Can be manufactured.

On-chip lens and to change the non-linear manner in either direction of vertical and horizontal directions of the exit pupil correction amount effective imaging area of the color filters, by forming a color filter and an on-chip lens, the shading characteristics An improved solid-state imaging device can be manufactured.
A solid-state imaging device with improved shading characteristics by forming the color filter and the on-chip lens so that the exit pupil correction amount of the on-chip lens and the color filter changes concentrically and nonlinearly from the center to the effective imaging region Can be manufactured.

  Embodiments of the present invention will be described below with reference to the drawings.

FIG. 2 shows a basic configuration when applied to a single-plate color CCD solid-state imaging device for easy understanding of the present invention. This figure is a cross-sectional structure of the main part showing only the center of the effective imaging region and the pixel portions at both the left and right ends.
The CCD solid-state imaging device 21 according to the basic configuration includes a plurality of pixels that are arranged in a matrix in an imaging region of a semiconductor substrate, for example, a silicon semiconductor substrate (a so-called epitaxial substrate having an epitaxial layer grown on the semiconductor substrate) 22. Are formed, a vertical transfer register 27 is formed corresponding to each row of the light receiving portions 23, a color filter 32 is formed on the imaging region via a flattening film 31, and an on-chip lens 33 is formed thereon. Formed.

  The vertical transfer register 27 is configured by forming a transfer electrode 26 made of, for example, polycrystalline silicon via a gate insulating film 25 on a channel region 24 formed on the substrate surface. On the substrate surface, an interlayer insulating film 28, a light shielding film 29 having an opening 29A in the light receiving portion 23, and a passivation film 30 made of, for example, a plasma silicon nitride film, a planarizing film 31, and the like are formed. As the color filter 32, a primary color filter composed of a red filter component 32R, a green filter component 32G, and a blue filter component 32B is formed in this example. In such a solid-state imaging device 21, in order to improve shading characteristics due to oblique light around the effective imaging region 35, the center of the on-chip lens and the color filter is received from the center of the effective imaging region 35 to the periphery. A so-called exit pupil correction is performed by shifting from the center of the image to the center of the effective imaging region.

Then, in the basic structure, in particular, short exit pupil lens disposed in the camera set, in this example to correspond to a short exit pupil lens aspherical, reflecting the aspherical lens shape, the effective image pickup area 35 1, the exit pupil correction amount α of the on-chip lens 33 or the color filter 32 or both of the on-chip lens 33 and the color filter 32 is, for example, convex downward in FIG. As indicated by a curve I, the effective imaging area 35 is changed in a non-linear manner from the center to the periphery. That is, nonlinear exit pupil correction is performed instead of the conventional linear exit pupil correction.

  Naturally, this non-linear exit pupil correction may be performed by the on-chip lens 33 alone, the color filter 32 alone, or both the on-chip lens 33 and the color filter 32. In the case of both the on-chip lens and the color filter, the change in the exit pupil correction amount may or may not be the same.

Further, as a method of changing the exit pupil correction amount α from the center of the effective imaging region to the periphery, as shown in FIG. 3, the screen vertical direction A, the screen horizontal direction B, and the screen diagonal from the center of the effective imaging region 35. The direction C may be changed independently, or may be changed by any combination of directions A, B, and C. These alone or in combination are selected depending on the short exit pupil lens (optical lens) of the camera set to be used, that is, the set lens. The exit pupil correction amount α is particularly preferably changed in the horizontal direction B of the screen. Further, the change in the exit pupil correction amount α may be changed concentrically from the center of the effective imaging region 35 toward the periphery.

FIG. 4 shows an example in which nonlinear exit pupil correction is performed by the on-chip lens 33 alone. The exit pupil correction amount α of the on-chip lens 33 with respect to the light receiving unit center 101 is changed nonlinearly. At this time, as shown in FIG. 4, the color filter 32 may match the center of the color filter with the center of the light receiving unit 101 in the entire effective imaging region (particularly when the distance between the light receiving unit 23 and the color filter 32 is short). Although not shown, the exit pupil correction amount of the color filter 32 with respect to the light receiving unit center 101 may be linearly changed from the center of the effective imaging region toward the periphery.

FIG. 5 shows an example in which nonlinear exit pupil correction is performed by the color filter 32 alone. The exit pupil correction amount α of the color filter 32 with respect to the light receiving unit center 101 is changed nonlinearly. At this time, as shown in FIG. 5, the on-chip lens 33 may linearly change the exit pupil correction amount γ of the on-chip lens 33 with respect to the light receiving unit center 101 from the center to the periphery of the effective imaging region. .

In FIG. 6, nonlinear exit pupil correction is performed by both the on-chip lens 33 and the color filter 32, and the change in the exit pupil correction amount α is the same for the on-chip lens 33 and the color filter 32 (that is, the entire effective imaging region). The center of the on-chip lens and the center of the color filter component coincide). That is, the exit pupil correction amount α of the on-chip lens 33 and the color filter 32 with respect to the light receiving unit center 101 is changed nonlinearly.

FIG. 7 shows an embodiment in which the solid-state imaging device according to the present invention is applied to a single-plate color CCD solid-state imaging device. In FIG. 7, parts corresponding to those in FIG. The embodiment of the present invention is an example in which nonlinear exit pupil correction is performed by both the on-chip lens 33 and the color filter 32, and the change in the exit pupil correction amount is different between the on-chip lens and the color filter. . That is, the exit pupil correction amount α of the color filter 32 with respect to the light receiving portion center 101 is changed nonlinearly, and the exit pupil correction amount β of the on-chip lens center 103 is also linearly or nonlinearly changed with respect to the color filter center 102. It is changing. In addition, the refractive index in each layer below the on-chip lens 33 differs depending on the wavelength of incident light. For this reason, the configuration in which the exit pupil correction is performed between the on-chip lens 33 and the color filter 32 described above allows fine adjustment of the difference in refractive index to further improve the shading characteristics. In this case, the exit pupil correction amount is adjusted for each color filter component.

  Next, an embodiment of the method for manufacturing the CCD solid-state imaging device according to the present invention described above will be described with reference to FIGS.

8A to 9G show a manufacturing process of a light receiving unit and a vertical transfer register corresponding to one pixel. This solid-state imaging device has a getter function for removing metal impurities mixed in in the manufacturing process.
First, as shown in FIG. 8A, a first conductivity type CZ substrate 41 cut out from a silicon single crystal formed by a CZ (Czochralski) method is prepared, and an insulating film 42 is provided on one surface of the substrate 41. Carbon is ion-implanted to form a carbon implantation region 43 that functions as a getter sink at a required depth from the surface.
In this example, a CZ substrate 41 having a resistivity of 8 to 12 Ωcm and a diameter of 200 mm is prepared for phosphorus (P) dope, and thermal oxidation with a thickness of 20 nm is performed on one surface by dry oxidation at 1000 ° C. after RCA cleaning. A film (silicon oxide film) 42 is formed. Subsequently, carbon is introduced from the mirror surface through the thermal oxide film 42 with an acceleration energy of 160 keV and a dose of 1 × 10 ¹⁵ cm ⁻² to form a carbon implantation region 43. At this time, the projected range of carbon is about 0.36 μm, and the peak concentration is about 5 × 10 ¹⁸ cm ⁻³ . This carbon acts as a getter sink and removes metal impurities mixed in the manufacturing process. Next, annealing is performed at 1000 ° C. for 10 minutes. As a result, as shown in FIG. 8A, a carbon implantation region 43 having a peak concentration is formed at a position deeper than the mirror surface of the CZ substrate 41.

Thereafter, as shown in FIG. 8B, the surface insulating film 42 is removed, and an epitaxial layer 44 is grown on the substrate 41 to form the epitaxial substrate 21.
In this example, the thermal oxide film 42 is removed with a solution containing an HF solution, and a phosphorus (P) -doped n-type silicon epitaxial layer 44 having a specific resistance of 40 to 50 Ωcm at a temperature of about 1100 ° C. using SiHCl gas. The epitaxial substrate 21 is completed by growing it on the mirror surface to a thickness of 8 μm.

Next, as shown in FIG. 8C, the second conductivity type first semiconductor well region 45 is formed in the first conductivity type epitaxial layer 44.
In this example, a first p-type semiconductor well region 45 is formed in the n-type silicon epitaxial layer 44.

Next, as shown in FIG. 8D, in the first second conductivity type semiconductor well region 45, the second second conductivity type semiconductor well region 46 and the first conductivity type transfer channel region 24 thereon, A two-conductivity type channel stop region 47 is formed, and a gate insulating film 25 is formed on the substrate surface.
In this example, a silicon oxide film (Si0 ₂₎ and the gate insulating film 25 of three-layer structure of a silicon nitride film (SiN) and silicon oxide film (SiO ₂₎ on the surface of the first p-type semiconductor well region 45 Then, n-type and p-type impurities are selectively ion-implanted into the first p semiconductor well region 45 to form an n-type transfer channel region 24 that constitutes a vertical transfer register, a p-type channel stop region 47, Two p-type semiconductor well regions 46 are formed.

  Next, as shown in FIG. 9E, after forming a conductive layer to be a transfer electrode, the transfer electrode 26 is formed by selective etching using a photoresist. In this example, the transfer electrode 26 is formed of polycrystalline silicon.

Next, as shown in FIG. 9F, a first conductivity type semiconductor region 49 is formed in the first second conductivity type semiconductor well region 45, and the second conductivity type semiconductor well region 45 and the first conductivity type semiconductor region are formed. A light receiving portion (photoelectric conversion changing portion) 23 is formed by a photodiode having a pn junction with 49. Further, a second conductivity type accumulation region 50 is formed at the interface between the first conductivity type semiconductor region 49 and the gate insulating film 25.
In this example, an n-type impurity diffusion region 49 is formed, and the light receiving unit 23 is configured by a photodiode PD formed by a pn junction j between the n-type impurity diffusion region 49 and the p-type semiconductor well region 45. A p-type positive charge accumulation region 50 is formed at the interface between the n-type impurity diffusion region 49 and the gate insulating film 25.

  Next, as shown in FIG. 9G, a light shielding film 29 is formed through an interlayer insulating film 51 so as to cover the transfer electrode 26. The light shielding film 29 is formed in the entire area other than the light receiving part 23. The light shielding portion 29 can be formed of, for example, an aluminum (Al) film or a tungsten (W) film. A read gate portion is formed between the light receiving portion 23 and the vertical transfer register 27.

In FIG. 9E, the insulating film 25 under the transfer electrode 26 has a SiO ₂ / SiN / SiO ₂ film (ONO film) structure, but only the surface of the light receiving portion 23 is reattached to form a silicon oxide (SiO ₂ ) film. Yes. However, the present invention is not limited to this structure. For example, when a silicon nitride (SiN) film is provided as an antireflection film on a part or the entire surface of the silicon oxide (SiO ₂ ) film of the light receiving portion 23. Is also effective. Further, this solid-state imaging device has an n-type impurity region 49 formed on the surface of a p-type semiconductor well region 45 formed on the n-type silicon epitaxial substrate 21, so that the p-type semiconductor well region 45 and the n-type impurity diffusion region 49 This is a type in which a photodiode is formed by a pn junction.

Next, the process of FIGS. 10H to 10K is continued. 10H to 10K show cross-sectional structures of both the center pixel and the right end pixel of the imaging region.
That is, as shown in FIG. 10H, after a passivation film, for example, a plasma silicon nitride film (P-SiN film) is formed on the light shielding film 29, the planarization film 31 is formed. Next, a color filter is formed. In this example, a primary color filter 32 is formed. That is, the green filter component 32G is formed in FIG. The green filter component 32G is formed by coating a resist color resist film on the entire surface and then patterning it by exposure and development. When forming the green filter component 32G, the optical center 101 of the light receiving unit 23 and the center 102 of the green filter component 32G are shifted from the center to the periphery of the effective imaging region to secure the exit pupil correction amount 61. The exit pupil correction amount 61 changes non-linearly from the center to the periphery of the effective imaging region, as shown by the curve I in FIG. In this example, the center 102 of the green filter 32G is shifted from the periphery of the effective imaging region to the center. This shift is realized by forming a desired shift pattern on a reticle (optical mask) at the time of exposure.

Next, as shown in FIG. 10I, the blue filter component 32B is formed in the same manner.
Next, as shown in FIG. 10J, the red filter component 32R is formed in the same manner. In this way, the color filter 32 composed of the red, green and blue filter components 32R, 32G and 32B is formed.

Next, as shown in FIG. 10K, an on-chip lens 33 is formed on the color filter 32. The lens shape may be an etch back method by resist reflow or other methods. In this example, the center 103 of the on-chip lens 33 is shifted toward the center of the effective imaging region with respect to the center 102 of the color filter 32, and the exit pupil correction amount 62 is set between the on-chip lens 33 and the color filter 32. Form. The exit pupil correction amount 62 may be changed nonlinearly along the curve I in FIG. 1, or may be changed linearly along the line III in the figure. In this way, the CCD solid-state imaging device 21 that can perform nonlinear exit pupil correction corresponding to the aspherical short exit pupil lens of the camera set to be used is obtained.

  In the above example, an n-type impurity diffusion region 49 is formed on the surface of the p-type semiconductor well region 45 formed on the n-type silicon epitaxial substrate, and the p-type semiconductor well region 45 and the n-type impurity diffusion region 49 are formed. Although the photodiode (PD) is formed by the pn junction, the present invention can also be applied to the case where the photodiode (PD) is formed by forming an n-type impurity diffusion region in a p-type silicon epitaxial substrate.

According to the CCD solid-state imaging device 21 according to the present embodiment described above, corresponding to the non-spherical short exit pupil lens of the camera set to be used, the exit pupil correction amount of both on-chip lens 33 and the color filters 32 As shown by the curve in FIG. 1, the shading characteristics such as sensitivity shading, color shading, smear shading, etc. can be improved by changing non-linearly from the center to the periphery of the effective imaging region.

Since the refractive index varies depending on the wavelength of the incident light, as shown in FIG. 7, the exit pupil correction is performed between the on-chip lens 33 and the color filter 32 to perform fine adjustment and further improve the shading characteristics. Improvements can be made.
Therefore, the CCD solid-state imaging device of this embodiment can be suitably applied to an imaging device of a camera set having a short exit pupil lens.

In the above example, the exit pupil correction amount of the on-chip lens and / or the color filter is nonlinearly changed along the convex curve I in FIG. 1 corresponding to the aspherical short exit pupil lens. In addition, the exit pupil correction amount is changed nonlinearly so as to follow an upwardly convex curve according to, for example, the configuration of the short exit pupil lens and other components. Is also possible.

The present invention provides a CCD solid-state imaging device having one or a plurality of in-layer lenses corresponding to one pixel, a CCD solid-state imaging device having an epitaxial layer after forming a vertical overflow barrier and having sensitivity to near infrared rays, Furthermore, the present invention can also be applied to a CCD solid-state imaging device in which a light receiving portion is formed only by a film that is permeable to ultraviolet rays.
In the above example, the present invention is applied to a CCCD solid-state image pickup device. It can be applied and a sufficient effect is expected.

It is a graph which shows the nonlinear change of the exit pupil correction amount of the on-chip color filter in the solid-state image sensor according to the present invention. It is a block diagram which shows the basic composition of the principal part of the CCD solid-state image sensor of this invention for making an understanding of this invention easy. It is explanatory drawing which shows a direction on the effective imaging region which can apply the change of the exit pupil correction amount which concerns on this invention. It is a schematic block diagram which shows the 1st example of the exit pupil correction | amendment of the CCD solid-state image sensor which concerns on a comparative example . It is a schematic block diagram which shows the 2nd example of the exit pupil correction | amendment of the CCD solid-state image sensor which concerns on a comparative example . It is a schematic block diagram which shows the 3rd example of the exit pupil correction | amendment of the CCD solid-state image sensor which concerns on a comparative example . It is a schematic block diagram which shows the principal part of one Embodiment of the CCD solid-state image sensor which concerns on this invention. A to D are manufacturing process diagrams (part 1) illustrating an embodiment of a method for manufacturing a solid-state imaging device according to the present invention. EG is a manufacturing process figure (the 2) which shows one Embodiment of the manufacturing method of the solid-state image sensor which concerns on this invention. HK is a manufacturing process figure (the 3) which shows one Embodiment of the manufacturing method of the solid-state image sensor which concerns on this invention. It is sectional drawing which shows the structure of the principal part of the conventional CCD solid-state image sensor. It is explanatory drawing with which it uses for description of exit pupil correction | amendment. It is a graph which shows the linear change of the exit pupil correction amount of the on-chip color filter in the conventional solid-state image sensor.

  21..Solid-state image sensor, 22..Semiconductor substrate, 23..Light receiving part, 24..Channel region, 25..Gate insulating film, 26..Transfer electrode, 27..Vertical transfer register, 28..Interlayer insulation Film 29... Light-shielding film 30.. Passivation film 31.. Flattening film 32 .. color filter 33 .. on-chip lens 35... Effective imaging area α, β, γ. Correction amount

Claims (6)

In correspondence with the aspherical short exit pupil lens of the camera set used,
Exit pupil correction amount of the on-chip lens and the color filter with respect to the center of the light receiving portion, the non-linear manner to changes toward the periphery from the center of the effective image pickup area,
The exit pupil correction amount is different between the on-chip lens and the color filter,
A solid-state imaging device, wherein an exit pupil correction amount of the on-chip lens with respect to a center of the color filter is changed linearly or nonlinearly . The on-chip lens and the exit pupil correction amount of the color filter, a solid-state imaging device according to claim 1, characterized by comprising non-linear manner to changes in vertical and horizontal directions of the effective image pickup area. The on-chip lens and a solid-state imaging device according to claim 1, wherein the exit pupil correction amount of the color filter is characterized by comprising changes concentrically nonlinear manner from the center of the effective image pickup area. When forming a color filter and an on-chip lens on an effective imaging region in which a plurality of light receiving units are arranged,
In correspondence with the aspherical short exit pupil lens of the camera set used,
The exit pupil correction amount nonlinear manner changes toward the periphery from the center of the effective image pickup area, and the exit pupil correction amount of the on-chip lens and the color filter with respect to the center of the light receiving portion, the color filter and the on-chip lens And forming the color filter and the on-chip lens so that the exit pupil correction amount of the on-chip lens with respect to the center of the color filter changes linearly or non-linearly. Manufacturing method of a solid-state imaging device. Serial on the exit pupil correction amount of chip lenses and color filters, so as to change the non-linear manner in the vertical and horizontal directions of the effective image pickup area, claim 4, characterized in that to form the color filter and the on-chip lens A method for manufacturing a solid-state imaging device. Claim 4 exit pupil correction amount of the on-chip lens and the color filter is such that the center varies concentrically nonlinear manner from the effective image pickup area, and forming the color filter and the on-chip lens A method for manufacturing a solid-state imaging device.

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