JP4421864B2 - Thin film manufacturing apparatus and thin film manufacturing method using the apparatus - Google Patents

Description

  The present invention relates to a thin film manufacturing apparatus and a thin film manufacturing method using the apparatus, and more particularly to a thin film manufacturing apparatus and a thin film manufacturing method using a plasma CVD method.

  As a method for forming a silicon-based thin film on a substrate, a plasma CVD method is known in which a reactive gas is decomposed with plasma energy and deposited on the substrate to form a thin film. It has been known.

  In general, a plasma CVD apparatus includes a reaction chamber that can be evacuated, a gas introduction portion that introduces a reaction gas into the reaction chamber, an exhaust portion that exhausts the reaction gas in the reaction chamber, and a flat plate-like shape facing each other with a space therebetween. An anode and a cathode electrode, and a high frequency power supply unit that applies high frequency power between the anode and the cathode electrode are provided (see, for example, Patent Document 1).

Here, normally, the anode electrode has a substrate to be deposited on the surface facing the cathode electrode, and a heater for heating the substrate is built in the anode electrode.
The cathode electrode is hollow and has a large number of holes on the surface facing the anode electrode, and the gas supplied from the gas introduction part is ejected through the holes.
The anode electrode and the cathode electrode are securely fixed to the reaction vessel in order to accurately maintain the facing distance between them.
U.S. Pat. No. 4,264,393

When forming a thin film by the plasma CVD apparatus, the anode electrode on which the substrate to be deposited is placed is heated to about 300 ° C., and the cathode electrode facing the anode electrode is also heated by the radiant heat from the anode electrode.
At this time, the anode electrode and the cathode electrode are thermally expanded and deformed, resulting in a deviation in the facing distance.
If a deviation occurs in the facing distance between the anode electrode and the cathode electrode, desired device performance cannot be obtained, and the film thickness distribution and the like are adversely affected.

  The present invention has been made in view of the above circumstances, and when the anode electrode and the cathode electrode are heated, thermal deformation can be prevented and the deviation of the facing distance therebetween can be reduced. A thin film manufacturing apparatus is provided.

The present invention includes a reaction chamber, a gas introduction portion for introducing a reaction gas into the reaction chamber, an exhaust portion for exhausting the reaction gas in the reaction chamber, flat plate-like first and second electrodes provided in the reaction chamber, Heating one of the first and second electrodes, the first and second supports that respectively support the first and second electrodes in parallel, the high-frequency power source that applies high-frequency power between the first and second electrodes, and A substrate to be deposited on the heated electrode, and the first and second electrodes are supported by only the peripheral edge of the electrode so as to be movable in the direction of thermal expansion by the corresponding support. A thin film manufacturing apparatus is provided.

According to this invention, the first and second supports that respectively support the first and second electrodes in parallel are provided, and the first and second electrodes can be moved in the direction of thermal expansion by the corresponding supports. because they are supported only at the peripheral portion of the heated first and second electrodes can be released thermal expansion upon thermal expansion by the movement of the thermal expansion direction, as a result, the first electrode and the second electrode As a result, the deviation in the facing distance between the two is reduced, and the performance of the apparatus is improved.
In addition, since the first and second electrodes are supported so as to be movable in the direction of thermal expansion, it is easy to remove the electrodes from the apparatus during maintenance of the apparatus, and the maintainability of the plasma CVD apparatus is improved.

The present invention includes a reaction chamber, a gas introduction portion for introducing a reaction gas into the reaction chamber, an exhaust portion for exhausting the reaction gas in the reaction chamber, flat plate-like first and second electrodes provided in the reaction chamber, Heating one of the first and second electrodes, the first and second supports that respectively support the first and second electrodes in parallel, the high-frequency power source that applies high-frequency power between the first and second electrodes, and A substrate to be deposited on the heated electrode, and the first and second electrodes are supported by only the peripheral edge of the electrode so as to be movable in the direction of thermal expansion by the corresponding support. A thin film manufacturing apparatus is provided.

The thin film manufacturing apparatus according to the present invention is used to manufacture a silicon-based thin film by, for example, a plasma CVD method.
As the silicon-based thin film, for example, a crystalline to amorphous thin film mainly composed of silicon can be given, and a gas containing silicon element can be used as the reaction gas.
Specifically, silane (SiH ₄ ), disilane (Si ₂ H ₆ ), or the like can be used as a reaction gas. Even if these silanes and disilanes are diluted with hydrogen (H ₂ ), helium (He), or the like. Good.

In addition, examples of the silicon-based thin film manufactured by the thin film manufacturing apparatus according to the present invention include a silicon carbide (SiC) film, a silicon nitride (SiN) film, a silicon oxide (SiO) film, and a SiGe film.
When a silicon carbide film is manufactured, a gas such as CH ₄ or C ₂ H ₆ containing a carbon element is simultaneously introduced in addition to a gas containing a silicon element as a reaction gas.
When manufacturing a silicon nitride film, a gas such as NH ₃ or NO containing a nitrogen element is simultaneously introduced as a reaction gas in addition to a gas containing a silicon element.
In the case of manufacturing a silicon oxide film, a gas such as NO and CO ₂ containing an oxygen element is simultaneously introduced in addition to a gas containing a silicon element as a reaction gas.
In the case of manufacturing a SiGe film, a gas such as GeH ₄ containing a germanium element is simultaneously introduced in addition to a gas containing a silicon element as a reaction gas.
Further, impurities may be introduced into these silicon-based thin films in order to control conductivity. When n-type is used, an impurity element such as PH _{3 is used,} and when p-type is used, an impurity element such as B ₂ H ₆ is used. Simultaneously introduce the contained gas.

Moreover, in the thin film manufacturing apparatus according to the present invention, as the reaction chamber, a reaction chamber that can be evacuated at least inside can be used.
Such a reaction chamber can be made of, for example, stainless steel, an aluminum alloy, or the like. When the reaction chamber is composed of two or more members, a structure that can be completely sealed by using an O-ring or the like in the fitting portion. Is preferred.

Moreover, in the thin film manufacturing apparatus according to the present invention, as the gas introduction part, for example, those conventionally used conventionally in plasma CVD apparatuses can be used, and are not particularly limited.
In the thin film manufacturing apparatus according to the present invention, as the exhaust part, for example, a vacuum pump, an exhaust pipe connecting the reaction chamber and the vacuum pump, a pressure controller provided in the middle of the exhaust pipe, or the like is used. be able to.
Further, in the thin film manufacturing apparatus according to the present invention, as the high frequency power supply unit, for example, a high frequency power supply unit composed of a plasma excitation power supply and an impedance matching device can be used.
In the thin film manufacturing apparatus according to the present invention, the heating unit is provided for heating the electrode on which the substrate is mounted. As the heating unit, for example, a sheath heater can be used, which may be used by being incorporated in the first or second electrode.

In the thin film manufacturing apparatus according to the present invention, the first and second electrodes may be flat and made of a heat-resistant conductive material such as stainless steel, aluminum alloy, or carbon.
The first electrode may be, for example, an anode electrode with a built-in heater, and the second electrode may be, for example, a cathode electrode that is hollow and has a number of holes on the surface facing the first electrode.

In the thin film manufacturing apparatus according to the present invention, at least one of the first and second electrodes may be fixed to a support part of which corresponds.
Further, in the thin film manufacturing apparatus according to the present invention, at least one of the first and second electrodes is fixed to a corresponding support body, and the other part is supported to be movable in the thermal expansion direction. preferable.
According to such a configuration, when each of the first and second electrodes is installed on the corresponding support, at least one of the first and second electrodes is naturally determined to have a fixed position with respect to the corresponding support. Positioning can be performed easily.
Moreover, since the electrode is limited to a part that is fixed to the support, movement in the direction of thermal expansion during heating is not hindered.
In addition, as a method of fixing at least one of the first and second electrodes to the corresponding support, for example, screwing may be mentioned. As another method, there may be mentioned a method in which bosses (protrusions) and through holes are respectively formed in the corresponding support and electrodes, and the bosses of the support are inserted into the through holes of the electrodes.

In the thin film manufacturing apparatus according to the present invention, the first and second electrodes may be supported horizontally so as to be orthogonal to the direction of gravity.
In such a configuration, each of the first and second supports has a plurality of locking portions that loosely lock the edges of the corresponding electrodes, and each locking portion has a gap in the horizontal direction with the edge of the corresponding electrode. And a support piece for supporting the lower surface of the electrode.
For example, when the first and second electrodes are substantially square, each of the first and second supports may be composed of four locking portions that support the four corners of the corresponding electrode.
Thus, when each of the first and second supports is composed of four locking portions, the four locking portions constituting the second support are formed on the upper ends of the four columns extending vertically from the bottom surface of the reaction chamber. Each may be fixed.

Further, the shape and form of the first and second supports are not limited to those described above. For example, two frame-like mounts that support only the edges of the first and second electrodes, respectively. Moreover, these two frame-shaped mounts may be formed integrally in a row in the vertical direction.
Thus, if the shape and form of the first and second support bodies can support the first and second electrodes in parallel and can support at least one of the first and second electrodes movably in the direction of thermal expansion. Any shape and form may be used and not particularly limited.

In the thin film manufacturing apparatus according to the present invention, the first and second supports may be made of an insulator.
Here, as an insulator which comprises a 1st and 2nd support body, the heat-resistant material excellent in insulation and heat insulation, such as glass, an alumina, or a zirconia, can be mentioned, for example.
When the first and second supports are composed of these heat-resistant materials, not only the first and second electrodes can be electrically insulated from the reaction vessel, but also when the first or second electrode is heated, Heat conduction can be minimized.
As a result, in a conventional plasma CVD apparatus, a cooling device such as a cooling water pipe disposed around the reaction chamber for the purpose of cooling the reaction chamber can be omitted.

  Further, from another viewpoint, the present invention provides a reaction chamber, a gas introduction portion for introducing a reaction gas into the reaction chamber, an exhaust portion for exhausting the reaction gas in the reaction chamber, and a plurality of pairs provided in the reaction chamber. High-frequency power is applied between each pair of the first and second electrodes, the first and second electrodes, the first and second supports that support the first and second electrodes in parallel, and the first and second electrodes, respectively. A high-frequency power supply unit to be applied and a heating unit for heating one of the first and second electrodes in each pair, and each substrate to be deposited is mounted on each pair of heated electrodes, Each pair of two electrodes also provides a thin film manufacturing apparatus in which at least one is supported so as to be movable in the direction of thermal expansion.

In the above-described thin film manufacturing apparatus including a plurality of pairs of first and second electrodes, at least one of each pair of the first and second electrodes may be fixed to a support body corresponding to a part thereof.
Further, in the thin film manufacturing apparatus including a plurality of pairs of first and second electrodes, at least one of each pair of the first and second electrodes is fixed to a corresponding support body, and the other part is It may be supported so as to be movable in the thermal expansion direction.
In the thin film manufacturing apparatus including a plurality of pairs of first and second electrodes, the plurality of pairs of first and second electrodes may be supported horizontally so as to be orthogonal to the direction of gravity.

In another aspect of the present invention, the thin film manufacturing apparatus according to the present invention including a pair of first and second electrodes is used to place a substrate to be deposited on a heated electrode, and to form a reaction chamber. The present invention also provides a thin film manufacturing method for forming a thin film on a substrate by supplying a reactive gas to the substrate and applying a high frequency power between the first and second electrodes.
From another viewpoint, the present invention uses the above-described thin film manufacturing apparatus according to the present invention including a plurality of pairs of first and second electrodes, and each substrate to be deposited is mounted on each pair of heated electrodes. And providing a thin film on each substrate by supplying a reactive gas into the reaction chamber and applying high frequency power between each pair of the first and second electrodes.

  Hereinafter, a thin film manufacturing apparatus according to an embodiment of the present invention will be described in detail with reference to the drawings. In the following embodiments, common members will be described using the same reference numerals.

  A thin film manufacturing apparatus according to Embodiment 1 of the present invention will be described with reference to FIGS. FIG. 1 is an explanatory view showing the overall configuration of a thin film manufacturing apparatus according to Example 1, FIG. 2 is an enlarged view of part A of FIG. 1, FIG. 3 is an enlarged view of part B of FIG. FIG. 5 is an explanatory diagram for explaining a method of supporting the cathode electrode.

  As shown in FIG. 1, the thin film manufacturing apparatus 100 according to the first embodiment exhausts a reaction gas in a chamber (reaction chamber) 31, a gas introduction unit 28 for introducing a reaction gas into the chamber 31, and a reaction gas in the chamber 31. The exhaust portion 29, the flat plate-like anode electrode (first electrode) 4 and cathode electrode (second electrode) 34 provided in the chamber 31, and the latching portion 6 for supporting the anode electrode 4 and the cathode electrode 34 in parallel, respectively. , 5, a high-frequency power supply unit 30 that applies high-frequency power between the anode electrode 4 and the cathode electrode 34, and a sheath heater (heating unit) 24 that heats the anode electrode 4. Mounted on the anode electrode 4, the anode electrode 4 and the cathode electrode 34 are configured to be supported so as to be movable in their thermal expansion direction.

Here, the chamber 31 includes a main body portion 11 and a door portion 10, and both the main body portion 11 and the door portion 10 can be made of stainless steel or aluminum alloy. The fitting portion between the main body portion 11 and the door portion 10 is sealed using an O-ring (not shown) or the like.
The chamber 31 is connected to an exhaust unit 29 including an exhaust pipe 20, a pressure controller 22 and a vacuum pump 21 so that the inside of the chamber 31 can be controlled to an arbitrary degree of vacuum.

As shown in FIGS. 1 and 4, four locking portions 6 are provided on the bottom surface of the chamber 31, and the four corners of the anode electrode 4 are placed on the four locking portions 6. The four locking portions 6 constitute a first support.
The dimension of the anode electrode 4 is set to an appropriate dimension according to the dimension of the substrate 1 to be deposited. In Example 1, the size of the substrate 1 is set to 900 × 550 mm to 1200 × 750 mm, and the size of the anode electrode 4 is set to 1000 × 600 mm to 1200 × 800 mm.

The anode electrode 4 can be made of stainless steel, aluminum alloy, carbon, or the like. In Example 1, an aluminum alloy is used.
The anode electrode 4 has a built-in sheath heater 24 and is configured such that the temperature can be controlled in the range of room temperature to 600 ° C. using a sealed temperature sensor such as a thermocouple 25.

In order to suppress the heat rise of the chamber 31 due to radiant heat from the anode electrode 4, a gap D <b> 1 of 10 to 30 mm is provided between the bottom surface of the chamber 31 and the lower surface of the anode electrode 4 by the locking portion 6.
The locking portion 6 is preferably made of a material having a low thermal conductivity such as glass, alumina or zirconia in order to suppress the heat rise of the chamber 31 due to the heat conduction from the anode electrode 4. Use.

For the same reason, it is desirable that the contact area between the anode electrode 4 and the locking portion 6 is small. In the first embodiment, as described above, only the four corners of the anode electrode 4 are supported by the four locking portions 6. The contact area between the anode electrode 4 and the locking portion 6 is set to 30 × 50 mm for each locking portion 6a. The support form and the contact area are set in consideration of preventing the anode electrode 4 from bending.
Further, in order to further suppress the heat conduction from the anode electrode 4 to the chamber 31, the contact surface of each locking portion 6 with the anode electrode 4 is provided with several diggings having a depth of 1 to 5 mm, and the locking portions The contact area is reduced without impairing the strength of 6.

Here, as particularly shown in FIGS. 2 and 4, each locking portion 6 has a locking piece 6 a that forms a gap in the horizontal direction with respect to the edge of the anode electrode 4 in a state where the anode electrode 4 is placed. And a support piece 6 b that supports the lower surface of the anode electrode 4.
The locking piece 6a is formed in such a size and position that an appropriate gap is generated between the edge of the anode electrode 4 and each locking piece 6a in consideration of the thermal expansion of the anode electrode 4 due to heating. In Example 1, as shown in FIG. 2, the gap D2 between the edge of the anode electrode 4 before thermal expansion in the room temperature state and each locking piece 6a is set to 5 mm.

The anode electrode 4 is only placed on the four locking portions 6 and is not fixed by screws or the like. As a result, even if the anode electrode 4 is heated and thermally expanded, the anode electrode 4 moves (slids) on the support piece 6b of the locking portion 6 by the thermal expansion, and the thermal expansion is released.
The anode electrode 4 and the chamber 31 are electrically connected by a ground line 26. The ground wire 26 is made of an aluminum plate having a width of 10 to 35 mm and a thickness of 0.5 to 3 mm, and is attached to the four corners of the anode electrode 4.

The cathode electrode 34 includes a shower plate 2 and a back plate 3, and both the shower plate 2 and the back plate 3 can be made of stainless steel, aluminum alloy, or the like. In Example 1, an aluminum alloy is used. The dimension of the cathode electrode 34 is set to an appropriate dimension according to the dimension of the substrate 1 to be deposited. In Example 1, the dimension of the cathode electrode 34 is set to 1000 × 600 mm to 1200 × 800 mm.
The inside of the cathode electrode 34 is hollow, and is connected to the gas introduction part 28 by the reactive gas pipe 23. The reactive gas introduced into the cathode electrode 34 from the gas inlet 28 through the reactive gas pipe 23 is led out in a shower form from a plurality of holes formed in the shower plate 2 of the cathode electrode 34.

The plurality of holes in the shower plate 2 are preferably formed so as to have a diameter of 0.1 to 2.0 mm and an interval between adjacent holes of several mm to several cm.
As shown in FIGS. 1 and 5, the cathode 34 is mounted on the four locking portions 5 at the four corners. The four locking portions 5 constitute a second support.
Each locking portion 5 is fixed in the vicinity of the upper ends of four support columns 8 extending vertically from the bottom surface of the chamber 31. Moreover, in order to reinforce the four support | pillars 8, the top plate 9 is attached to those upper ends.

Each locking portion 5 constituting the second support 5 can be made of glass, alumina, zirconia, or the like. In Example 1, alumina or zirconia is used.
The top plate 9 can be made of stainless steel, aluminum alloy or the like, and aluminum alloy is used in the first embodiment.

Since the cathode electrode 34 is also heated by receiving the radiant heat from the anode electrode 4, it is desirable that the contact area between the cathode electrode 34 and the second support 5 be as small as possible as in the locking portion 6. The contact area between the electrode 34 and the locking portion 5 is set to 100 × 50 mm for each locking portion 5.
This contact area is also set in consideration of preventing the cathode electrode 34 from being bent, like the locking portion 6.

Further, as particularly shown in FIGS. 3 and 5, each locking portion 5 includes a locking piece 5 a that forms a gap in the horizontal direction with respect to the edge of the cathode electrode 34 in a state where the cathode electrode 34 is placed. The support piece 5b supports the lower surface of the cathode electrode 34.
In consideration of the thermal expansion of the cathode electrode 34 that receives the radiant heat from the anode electrode 4, the locking piece 5 a has an appropriate gap between the edge of the cathode electrode 34 and each locking piece 5 a. It is formed with such a size and position. In Example 1, the gap D3 between the edge of the cathode electrode 34 before thermal expansion in the room temperature state and each locking piece 5a is set to 5 mm.

The cathode electrode 34 is only placed on the four locking portions 5 and is not fixed by screws or the like. Thereby, even if the cathode electrode 34 is heated and thermally expanded, the cathode electrode 34 moves (slids) on the support piece 5b of the locking portion 5 by the amount of thermal expansion, and the thermal expansion is released.
That is, in Example 1, since both the anode electrode 4 and the cathode electrode 34 are supported so as to be movable in the thermal expansion direction, the thermal expansion of both the anode electrode 4 and the cathode electrode 34 is the locking portion. 6 and 5 are released by sliding generated on the support pieces 6b and 5b, and the gap between the anode electrode 4 and the cathode electrode 34 is not changed, and the designed interval accuracy is maintained.
Further, as described above, since the anode electrode 4 and the cathode electrode 34 are not fixed with screws or the like, they can be easily removed at the time of maintenance of the apparatus, and the maintainability of the apparatus is excellent.

The facing distance D4 between the anode electrode 4 and the cathode electrode 34 can be set between several mm to several tens mm, and in the first embodiment, it is set within a range of 2 to 30 mm.
The tolerance (interval accuracy) of the facing distance between the anode electrode 4 and the cathode electrode 34 is preferably within a few percent of the set value, and is within 1% in the first embodiment.

  The cathode electrode 34 is connected to a high frequency power supply unit 30 including the plasma excitation power supply 12 and the impedance matching device 13 via a power introduction terminal 27, and high frequency power is applied thereto. The plasma excitation power source 12 uses a power of 10 W to 100 KW at a frequency of DC to 108.48 MHz. In the first embodiment, power of 10 W to 100 KW is used at a frequency of 13.56 MHz to 54.24 MHz.

A reactive gas composed of SiH ₄ diluted with H ₂ is introduced through the cathode electrode 34 at a predetermined flow rate and pressure into the thin film manufacturing apparatus 100 according to the first embodiment having the above-described configuration. A silicon thin film having a film thickness of 300 nm is deposited on the substrate 1 within a film thickness distribution time of 10 minutes and a film thickness distribution within ± 10% by applying the above-mentioned high frequency power to the electrode 4 to generate glow discharge.

A thin film manufacturing apparatus according to Example 2 will be described with reference to FIG. The thin film manufacturing apparatus 200 according to the second embodiment has a two-stage configuration in which two sets of anode electrodes 4 and cathode electrodes 34 and two sets of locking portions 5 and 6 are provided in one chamber 31.
Specifically, a locking portion 6 for mounting the second-stage anode electrode 4 is provided on the first-stage cathode electrode 34, and two sets of the anode electrode 4 and the cathode electrode 34 are vertically stacked. .

Moreover, the support | pillar 8 is used in common with respect to the latching | locking part 5 of the 1st step and the 2nd step. Although the second embodiment has a two-stage configuration, a configuration having three or more stages is possible by repeating the same configuration.
In addition, about the structure of each part, such as the chamber 31, the gas introduction part 28, the exhaust part 29, the high frequency power supply part 30, each anode electrode 4, each cathode electrode 34, each 1st support body 6, and each 2nd support body 5, it is an Example. Same as 1.

  A thin film manufacturing apparatus according to Example 3 will be described with reference to FIGS. FIG. 7 is an explanatory diagram for explaining a method for supporting an anode electrode according to Example 3, and FIG. 8 is an explanatory diagram for explaining a method for supporting a cathode electrode according to Example 3.

  As shown in FIG. 7 and FIG. 8, in Example 3, one corner of the anode electrode 304 and the cathode electrode 334 is fixed in the form of dots on the fixing locking portions 306a and 305a, and the remaining three corners. Is mounted on the locking portions 6 and 5 so as to be movable in the direction of thermal expansion as in the first embodiment.

Cylindrical bosses 306a and 305a are erected on the fixing locking portions 306 and 305, respectively, and the anode 304 and the cathode electrode 334 have holes 304a and 334a corresponding to the bosses 306a and 305a at one corner, respectively. Is formed.
Then, the bosses 306a and 305a standing on the fixing locking portions 306 and 305 are fitted into the holes 304a and 334a of the anode electrode 304 and the cathode electrode 334, respectively, so that the anode electrode 304 and the cathode electrode 334 are fixed to each other. The stoppers 306 and 305 are detachably fixed.

Thereby, when the anode electrode 304 and the cathode electrode 334 are installed on the fixing locking portions 306 and 305 and the locking portions 6 and 5, respectively, the anode electrode 304 and the cathode electrode 334 are fixed to the fixing locking portions 306 and 306, respectively. The fixed position with respect to 305 is naturally determined, and positioning can be performed easily.
In addition, since only one corner of the anode electrode 304 and the cathode electrode 334 is fixed to the fixing locking portions 306 and 305, movement of the other three corners in the thermal expansion direction is not hindered.
Therefore, as in the first embodiment, even when the anode electrode 304 and the cathode electrode 334 are heated and expanded, the facing distance between the anode electrode 304 and the cathode electrode 334 is accurately maintained.

The fixing locking portions 306 and 305 can be formed of the same material as the locking portions 6 and 5. Other configurations are the same as those of the first embodiment.
Although not shown, the third embodiment also has a multi-stage configuration by providing a plurality of pairs of anode and cathode electrodes and a plurality of pairs of locking portions in one chamber as in the second embodiment. can do.

BRIEF DESCRIPTION OF THE DRAWINGS It is explanatory drawing which shows the whole structure of the thin film manufacturing apparatus by Example 1 of this invention. It is the A section enlarged view of FIG. It is the B section enlarged view of FIG. 3 is an explanatory diagram for explaining a method of supporting an anode electrode in Example 1. FIG. FIG. 3 is an explanatory view illustrating a method for supporting a cathode electrode in Example 1. It is explanatory drawing which shows the whole structure of the thin film manufacturing apparatus by Example 2 of this invention. It is explanatory drawing explaining the support method of the anode electrode in Example 3. FIG. It is explanatory drawing explaining the support method of the cathode electrode in Example 3. FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Board | substrate 2 ... Shower plate 3 ... Back plate 4,304 ... Anode electrode 5,6 ... Locking part 5a, 6a ... Locking piece 5b, 6b ... Support Piece 8 ... Column 9 ... Top plate 10 ... Door part 11 ... Body part 12 ... Plasma excitation power supply 13 ... Impedance matching device 20 ... Exhaust pipe 21 ... Vacuum pump DESCRIPTION OF SYMBOLS 22 ... Pressure controller 23 ... Reactive gas piping 24 ... Sheath heater 25 ... Thermocouple 26 ... Ground wire 27 ... Power introduction terminal 28 ... Gas introduction part 29 ... -Exhaust part 30 ... High frequency power supply part 31 ... Chamber 34, 334 ... Cathode electrode 304a, 334a ... Hole 305, 306 ... Fixing locking part 305a, 306a ... Boss D1 ..Between the chamber and the lower surface of the anode electrode Gap D2: Gap between the edge of the anode electrode and the locking piece of the locking part D3: Gap between the edge of the cathode electrode and the locking piece of the locking part D4: With the anode electrode Opposite spacing with cathode electrode

Claims (13)

A reaction chamber; a gas introduction portion for introducing a reaction gas into the reaction chamber; an exhaust portion for exhausting the reaction gas in the reaction chamber; flat plate-like first and second electrodes provided in the reaction chamber; A first and second support that respectively support the electrodes in parallel; a high-frequency power source that applies high-frequency power between the first and second electrodes; and a heating unit that heats one of the first and second electrodes The substrate to be deposited is mounted on the electrode to be heated, and the first and second electrodes are supported only by the peripheral edge of the electrode so as to be movable in the direction of thermal expansion by the corresponding support. Thin film manufacturing equipment.   The thin film manufacturing apparatus according to claim 1, wherein the first and second supports support lower surfaces of the peripheral edges of the first and second electrodes, and the first and second electrodes are supported horizontally by the support.   3. The thin film manufacturing apparatus according to claim 1, wherein at least one of the first and second electrodes is partially fixed to a corresponding support, and the other part is supported to be movable in a thermal expansion direction.   The thin film manufacturing apparatus according to claim 1 or 2, wherein the first and second electrodes are merely fixed on a corresponding support and are not fixed.   The thin film manufacturing apparatus according to any one of claims 1 to 4, wherein the first and second supports are made of an insulator.   The thin film manufacturing apparatus according to claim 5, wherein the insulator is made of glass, alumina, or zirconia.   The thin film manufacturing apparatus according to any one of claims 2 to 6, wherein the first and second electrodes are rectangular, and each of the first and second supports supports four corners of the corresponding electrode.   The thin film manufacturing apparatus according to any one of claims 2 to 6, wherein the first and second support members include a frame-like frame that supports only the edge portions of the first and second electrodes.   The second electrode is a cathode electrode to which high-frequency power is applied, and the cathode electrode is supported by a second support fixed to a support column extending vertically from the bottom surface of the reaction chamber. The thin film manufacturing apparatus described in 1.   The thin film according to any one of claims 2 to 9, wherein the first and second supports support the lower surfaces of the corresponding electrodes while restricting the horizontal movement of the first and second electrodes equal to or greater than a predetermined value. Manufacturing equipment.   The first electrode is an anode electrode connected to a ground potential, and a contact surface with the anode electrode of the first support that supports the anode electrode is provided with a digging. The thin film manufacturing apparatus described in 1.   The thin film manufacturing apparatus according to claim 1, wherein a plurality of sets each including a first electrode, a second electrode, a first support, and a second support are provided in the reaction chamber.   A thin film manufacturing apparatus according to any one of claims 1 to 12, wherein a substrate to be deposited is placed on an electrode to be heated, a reaction gas is supplied into a reaction chamber, and a space between the first and second electrodes A thin film manufacturing method for forming a thin film on a substrate by applying high frequency power to the substrate.

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