JP4424865B2

JP4424865B2 - Semiconductor single crystal pulling apparatus and single crystal extraction method thereof

Info

Publication number: JP4424865B2
Application number: JP2001057023A
Authority: JP
Inventors: 良山岸
Original assignee: Komatsu Machinery Corp
Current assignee: Komatsu Machinery Corp
Priority date: 2001-03-01
Filing date: 2001-03-01
Publication date: 2010-03-03
Anticipated expiration: 2021-03-01
Also published as: JP2002255685A; TW573085B

Description

【０００１】
【発明の属する技術分野】
本発明は、成長させた単結晶をファーネスチャンバ内に引き上げた状態でファーネスチャンバを結晶取出し位置に旋回させ、ファーネスチャンバ内から単結晶を外部に取出し搬出する半導体単結晶引上げ装置及びその単結晶取出し方法に関する。
【０００２】
【従来の技術】
従来より、例えばチョクラルスキー法によるシリコン半導体結晶引上げ装置により半導体単結晶を引き上げて製造しており、この半導体単結晶を薄くスライスして半導体集積回路等に使用するシリコンウエハを製作している。近年は集積回路の高集積化のために半導体単結晶の大型化（大径化、長尺化、高重量化）が求められて来ており、このため単結晶の種結晶部にかかる荷重が増大し種結晶部が破損する可能性が急激に増大している。従って、大口径で重量のある半導体単結晶を安全に（損傷を受けずに）、かつ確実に製作できる引上げ装置が強く要求されている。
【０００３】
このような引上げ装置としては、例えば特公昭６０−４１０３８号公報に開示された結晶処理装置が知られており、以下同公報の記載内容に基づき従来技術を説明する。図１３及び図１４は、それぞれ同公報に記載された結晶処理装置の側面一部断面図及び作動説明図である。これらの図において、筒状に形成された下部溶融液チャンバ８０内には、シリコン等の溶融液８３を含有するるつぼ８２が回転自在に、かつ昇降自在に配設されており、下部溶融液チャンバ８０の上部には分離バルブ８１が設けられている。下部溶融液チャンバ８０の上方には、ホイスト又はデリック８５により下部溶融液チャンバ８０に対して持ち上げ可能に、かつ旋回自在とされた、円筒形状の結晶受容上部チャンバ８６が配設され、上部チャンバ８６の上部には成長単結晶８９をチェーン８８を介して引き上げる引上げヘッド装置（結晶引上げ手段）８７が設けられている。また、結晶受容上部チャンバ８６の下端部近傍にはロックピン９０が半径方向に摺動自在に設けられており、このロックピン９０を内側に突出させて支持位置にすることにより、成長した単結晶８９を支持するようになっている。
【０００４】
図１３に示すように結晶排出位置まで旋回させた状態の結晶受容上部チャンバ８６の下方には、車輪付きのカート９２を有する結晶受容運搬装置９１が配置されている。結晶受容運搬装置９１はチャンバ支持部９４を備えており、チャンバ支持部９４には上端が開いた別個の直立の円筒形下部結晶受容チャンバ９３が配設されている。下部結晶受容チャンバ９３は上部チャンバ８６の軸芯と一致する位置に配置されている。また、カート９２はホイスト又はエレベータ滑車装置を有し、この装置により下部結晶受容チャンバ９３がチャンバ支持部９４中で昇降されるようになっている。さらに、下部結晶受容チャンバ９３は内部に、成長結晶８９を支持するため持上げられる支持バー９５と、エレベータ装置９６と、プラットフォーム９７とを有しており、これによってプラットフォーム９７は図１３に示すような下位置と図１４に示すような持上げた位置との間を移動自在となっている。
【０００５】
上記構成における作動を説明すると、結晶８９の成長が完了したら、引上げヘッド装置８７はチェーン８８により結晶８９を結晶受容上部チャンバ８６の支持位置に挿入されたロックピン９０上に下ろす。次に、上部チャンバ８６は分離バルブ８１により下部溶融液チャンバ８０から遮断された後に、大気に対し開かれ、上部チャンバ８６は分離バルブ８１及び下部溶融液チャンバ８０から分離される。次に、ホイスト８５は上部チャンバ８６及び引上げヘッド装置８７を僅かに持上げ、さらに旋回させて下部溶融液チャンバ８０の無い側に移動させる。そして結晶受容運搬装置９１を、下部結晶受容チャンバ９３が上部チャンバ８６の軸方向下方に来るような位置に動かす。この後、下部結晶受容チャンバ９３を持上げて上部チャンバ８６の底に接続し、下部結晶受容チャンバ９３内のエレベータ装置９６を持上げてプラットフォーム９７上の支持バー９５をロックピン９０との干渉を受けずに結晶８９の下部を支持する位置に上昇させる。次に、エレベータ装置９６を静かに下降させて、結晶８９を下部結晶受容チャンバ９３内に収納し、この後下部結晶受容チャンバ９３を下げて上部チャンバ８６から離し、結晶８９をカート９２で運搬する。
【０００６】
【発明が解決しようとする課題】
しかしながら、上記特公昭６０−４１０３８号公報に開示されたものは以下のような問題がある。
（１）結晶受容上部チャンバ８６を下部溶融液チャンバ８０の無い側に旋回させる際に、ロックピン９０のみによって結晶８９の下部を支持しているので、万一振動等により結晶８９とチェーン８８との接合部の種結晶部が破損した場合には、結晶８９を垂直に保持できず、結晶８９が倒れて上部チャンバ８６の内壁面と接触し、結晶の破損を招くことがあるので、破損防止の安全性において充分に満足できるものではない。また、結晶８９が傾斜した不安定な状態となるので、下部結晶受容チャンバ９３内のエレベータ装置９６を持上げる際に支持バー９５で安定に支持できず、このためエレベータ装置９６を下降させて結晶８９を下部結晶受容チャンバ９３内に損傷を受けずに収納することができない。
（２）結晶受容上部チャンバ８６を下部溶融液チャンバ８０の無い側に旋回させた後、結晶受容上部チャンバ８６の下端位置まで下部結晶受容チャンバ９３を上昇させる必要があるから、結晶８９の長さに応じて昇降時のストロークが長くなり、従って結晶受容運搬装置９１が大型になり易い。このため、結晶８９の長尺化に伴ない、結晶受容運搬装置９１の小型化が困難になり、また製造コストが高くなると共に、下降中の結晶８９の転倒の可能性が多くなる。
【０００７】
本発明は、上記の問題点に着目してなされ、種結晶部等の破損があっても結晶を転倒させることなく安定にチャンバ内から取出しできる半導体単結晶引上げ装置及びその単結晶取出し方法を提供することを目的としている。
【０００８】
【課題を解決するための手段、作用及び効果】
上記の目的を達成するために、第１発明は、真空室内で成長させて引き上げた単結晶を収納するファーネスチャンバと、ファーネスチャンバの上に配設され、単結晶を吊り下げた索条を巻き上げる引上げ手段と、ファーネスチャンバ及び引上げ手段を結晶引上げ位置と結晶取出し位置との間で旋回させる旋回手段とを備えた半導体単結晶引上げ装置において、前記ファーネスチャンバは、開閉自在な扉を設けた開口部を下部側面に形成すると共に、単結晶の取出し時に真空室との接続位置よりも低い受け渡し位置まで下降可能とし、さらに、単結晶の取出し時に単結晶の下端部のコーン面を受けて支持する受け治具と、ファーネスチャンバの側面に取付けられ、受け治具を載せた状態で前記開口部からファーネスチャンバ内に移動自在とされた支持部材を有し、単結晶の取出し時に支持部材により受け治具をファーネスチャンバ内に搬入して受け治具を介して単結晶を支持する支持手段と、結晶取出し位置でファーネスチャンバの下方に設置され、支持手段の下方から単結晶を支持した前記受け治具を持上げて載置する受け台を昇降自在に設け、単結晶を受け治具に載せた状態で収納する結晶搬出装置とを備えた構成としている。
【０００９】
第１発明によると、単結晶の引上げが完了した後に、ファーネスチャンバの側面に取付けられた支持手段の移動自在とされた支持部材により受け治具をファーネスチャンバ内に搬入し、前記単結晶のコーン面を支持部材に載せた上記受け治具で受けて支持するので、安定に単結晶を支持できる。そして、結晶取出し位置で結晶搬出装置の受け台を上昇させて、単結晶を載せた上記受け治具を受け台に載置し、この受け台を受け治具と共に下降させることにより単結晶をファーネスチャンバから取出して結晶搬出装置に収納する。このように、引上げ完了後から結晶搬出装置への単結晶収納時点まで、単結晶のコーン面を受け治具で受けて支持しているから、万一に種結晶部等が破損して単結晶の上方からの支持が無くなっても単結晶は受け治具で安定して支持されるので、単結晶の損傷を確実に防止できる。また、ファーネスチャンバの低い位置で単結晶の取出しを行うので、結晶搬出装置の受け台の昇降ストロークを短くでき、小型化及びコスト低減が可能となる。さらに、作業者がファーネスチャンバの低い位置で、種結晶部の切断作業、ファーネスチャンバ内からの支持手段の抜き取り作業、及びファーネスチャンバ内の清掃作業等を行えるので、作業の安全性をより高めることができ、作業性を向上できる。
【００１０】
第２発明は、第１発明に基づき、前記受け治具は、単結晶のコーン面形状に合った逆円錐形の穴を有する構成としている。
【００１１】
第２発明によると、受け治具は、単結晶のテーパ部のテーパ面を逆円錐形穴内に入れて安定に支持するので、万一に種結晶部等が破損しても、単結晶が倒れることなく、従って単結晶の破損、損傷を確実に防止できる。
【００１２】
第３発明は、第１又は第２発明に基づき、前記受け治具は、一側面部に、外周面から中央部に至る切り欠き部を有する構成としている。
【００１３】
第３発明によると、単結晶の引上げ完了位置のままで受け治具を単結晶の下方に移動させることが可能となり、この後受け治具が単結晶を受ける位置まで、単結晶を引上げ手段により下げることによって、単結晶と受け治具を接触させ、単結晶の重量の一部を受け治具が受けることにより、種結晶部にかかる負担を小さくして種結晶部の破損を防止した、安全なファーネスチャンバの上昇旋回作動ができる。
【００１４】
第４発明は、第１、第２又は第３発明に基づき、前記支持手段は、前記支持部材をフォーク状とし、支持部材の上部に、前記受け治具を水平方向に動かないように固定する固定手段を設け、支持部材上に載置された受け治具をファーネスチャンバ内に移動自在とする移動手段を設けた構成としている。
【００１５】
第４発明によると、支持手段の支持部材をフォーク状に構成したので、構成が簡単になると共に、結晶搬出装置の受け台に受け治具を載せて単結晶を取出す際に、支持部材から受け治具を容易に、かつスムースに外すことができるので、作業性が良い。
【００１６】
第５発明は、引き上げた単結晶を収納するファーネスチャンバを、索条で単結晶を吊り下げた状態で結晶引上げ位置から結晶取出し位置まで旋回させ、単結晶をファーネスチャンバ内から取出す半導体単結晶引上げ装置の単結晶取出し方法において、単結晶の引上げが完了した後、単結晶のコーン形状に合った穴を有する受け治具をファーネスチャンバ内に搬入し、受け治具に単結晶を載せて単結晶を支持する第１工程と、この後、結晶取出し位置で単結晶を受け治具に載せた状態でファーネスチャンバ内から取出す第２工程とを有する方法としている。
【００１７】
第５発明によると、単結晶の引上げ完了後からファーネスチャンバ内からの取り出し工程までの間、単結晶のコーン面をこのコーン形状に合った穴を有する受け治具で受けて支持するので、万一種結晶部が破損しても単結晶が倒れることがなく、安定した状態で支持できる。
【００１８】
第６発明は、第５発明に基づき、第１工程の次に、前記受け治具に載せた単結晶と共にファーネスチャンバを結晶取出し位置まで旋回させる工程を有する方法としている。
【００１９】
第６発明によると、第５発明の効果に加え、受け治具で単結晶を支持した状態で、ファーネスチャンバを結晶取出し位置まで旋回するので、旋回中に単結晶の破損の畏れが無く、確実に単結晶をファーネスチャンバ内から取出すことができる。
【００２０】
第７発明は、第５又は第６発明に基づき、第２工程は、結晶取出し位置で単結晶を受け治具に載せた状態でファーネスチャンバを受け治具と共に所定位置まで下降させた後、単結晶を受け治具と共にファーネスチャンバ内から取出す工程であることを特徴としている。
【００２１】
第７発明によると、第５，第６発明の効果に加え、ファーネスチャンバを単結晶の受け治具と共に所定距離下げて、結晶搬出装置による単結晶の取出し時の高さを低くするので、結晶搬出装置の受け台の昇降ストロークが小さくなる。これにより、結晶搬出装置を小型化でき、低コストで製作できると共に、結晶搬出装置の受け台が下降中に単結晶が倒れる畏れが少なくなる。また、作業者がファーネスチャンバの低い位置で、種結晶部の切断作業、及びファーネスチャンバ内からの支持手段の抜き取り作業等を行えるので、作業の安全性をより高めることができ、作業性を向上できる。
【００２２】
また第８発明は、引き上げた単結晶を収納するファーネスチャンバを、索条で単結晶を吊り下げた状態で結晶引上げ位置から結晶取出し位置まで旋回させ、単結晶をファーネスチャンバ内から取出す半導体単結晶引上げ装置の単結晶取出し方法において、単結晶の引上げが完了した後、ファーネスチャンバ内で単結晶のコーン面を受けて支持する受け治具に単結晶を載せる工程と、次に、受け治具に載せた単結晶と共にファーネスチャンバを結晶取出し位置まで旋回させる工程と、次に、結晶取出し位置で、単結晶を受け治具に載せた状態でファーネスチャンバを受け治具と共に所定位置まで下降させ、受け治具を結晶搬出装置の受け台の上に載せて単結晶を受け台に受け渡す工程と、次に、受け台を下降させて、受け治具に載せた単結晶をファーネスチャンバ内から取出し、結晶搬出装置に収納する工程とを有する方法としている。
【００２３】
第８発明によると、単結晶の引上げ完了後からファーネスチャンバを結晶取出し位置まで旋回させ、ファーネスチャンバ内から単結晶を取り出すまでの間は、単結晶のコーン面を受け治具で受けて支持するので、万一種結晶部が破損しても単結晶が倒れることがなく、安定した状態で確実に支持できる。さらに、結晶取出し位置で、ファーネスチャンバを所定距離下げて結晶搬出装置による単結晶のファーネスチャンバ内からの取出し時の高さを低くするので、結晶搬出装置の受け台の昇降ストロークが小さくなり、従って結晶搬出装置を小型化でき、低コストで製作できると共に、前記受け台の下降中に単結晶が倒れる可能性を小さくできる。
【００２４】
【発明の実施の形態】
以下、図面を参照して本発明の半導体単結晶引上げ装置を詳細に説明する。
【００２５】
図１及び図２はそれぞれ単結晶引上げ装置の側面図及び平面図である。床面ＦＬよりも低い位置に設置されたベース１１上に設けた架台１２の上面に真空室６（従来技術欄に記載の下部溶融液チャンバ８０に相当する）が搭載されている。真空室６は、シリコンなどの溶融液を溜める図示しないるつぼを内部に設けた下部のメインチャンバ６ａと、メインチャンバ６ａの上面に有する開口部を開閉自在に密閉するトップチャンバ６ｂとを有しており、トップチャンバ６ｂは前記るつぼ内にシリコン材料を充填する際に作業性を良くするためにメインチャンバ６ａに対して水平方向に旋回自在となっている。
【００２６】
トップチャンバ６ｂの上部に有する開口部６ｃには、筒状のファーネスチャンバ５（従来技術欄に記載の結晶受容上部チャンバ８６に相当する）の下端部が切り離し自在に接続されており、トップチャンバ６ｂの上部にはファーネスチャンバ５を切り離す時に真空室６内の真空度を保持するための分離バルブ６ｄが配設されている。ファーネスチャンバ５は略鉛直方向に設けられており、支持部材５ａを介して旋回手段３の旋回軸３ａに旋回自在に支持されている。ファーネスチャンバ５の側面の下端部近傍には、それぞれ開閉自在な扉１９が取り付けられた開口部が設けられている。旋回軸３ａは、下部が架台１２に固着され、かつ略鉛直方向に立設されたコラム１の上部に設けた上下１対のブラケット２，２の間に取り付けられている。また、旋回軸３ａには旋回筒３ｂが旋回自在及び昇降自在に支承されており、この旋回筒３ｂに前記支持部材５ａを介して前記ファーネスチャンバ５が取着されている。
【００２７】
支持部材５ａの下端部に旋回手段３の旋回モータ４が取り付けられており、旋回モータ４の出力軸は図示しないベルトを介して中間軸４ａの上端部に接続され、中間軸４ａの下端部に取着されたギアは旋回軸３ａに摺動自在に挿入されたギア３ｃに噛合っている。そして、ギア３ｃは旋回軸３ａに摺動自在に挿入された昇降手段７の昇降部材７ａの上面に固着されており、このギア３ｃの上端面に旋回筒３ｂの下端面が上方より当接している。旋回モータ４により、図２に示すように、ファーネスチャンバ５は旋回筒３ｂを介して旋回軸３ａの回りに結晶引上げ位置Ａと結晶取出し位置Ｂとの間を旋回するようになっている。
【００２８】
前記昇降手段７は、油圧シリンダ、又はモータとボールスクリュウとナット部材とからなる直動型アクチュエータ等よりなる昇降駆動部７ｂを備えており、本実施形態では油圧シリンダの例で示している。この昇降駆動部７ｂの駆動側（シリンダの場合ではチューブ）上端部は、旋回軸３ａの下端部を固定する前記下側ブラケット２に取着されている。また、昇降自在に上方に突設された昇降駆動部７ｂの被駆動側即ち昇降部（シリンダの場合ではロッド７ｃ）の上端部は、前記昇降部材７ａの外周部に取付けられている。さらに昇降部材７ａの外周面の一部が、コラム１に上下方向に布設された回り止めガイド（図示せず）に当接されていて、昇降部材７ａは昇降駆動部７ｂにより旋回軸３ａに沿って昇降される際に回転しないように回り止めがなされている。
【００２９】
また、ファーネスチャンバ５の上部には、支持台１３及び回転手段１４を介して引上げ手段１５が取り付けられている。引上げ手段１５は、上部に開閉自在なカバー１５ａを設けた筐体１５ｂ内に、ワイヤやケーブル等よりなる索条１７を巻き上げる図示しない巻き上げ機を備えている。この巻き上げ機より繰り出された索条１７は回転手段１４及び支持台１３内を経由してファーネスチャンバ５内に垂下され、その先端部に結着された種結晶（図示せず）が取り付けられている。
【００３０】
回転手段１４は、支持台１３に回転自在に支承され、かつ引上げ手段１５を下方より支持する回転軸１４ａを備え、この回転軸１４ａにその外周部に巻かれた無端ベルト１４ｂを介して接続された電動サーボモータ等からなる回転駆動源１４ｃを有している。単結晶引上げ時には、回転駆動源１４ｃをサーボ制御することにより引上げ手段１５を所定速度で回転させるようになっている。
【００３１】
また支持台１３とコラム１との上端間には、位置決め手段１８が設けられている。この位置決め手段１８は、ファーネスチャンバ５を結晶取出し位置Ｂから結晶引上げ位置Ａに旋回させるとき、引上げ手段１５を結晶引上げ位置Ａに精度良く位置決めするためのものであり、旋回方向位置及び上下位置を精度良く位置決めするようになっている。
【００３２】
図３はファーネスチャンバ５を結晶取出し位置Ｂに旋回させたときの側面図である。単結晶取出しの際には、ファーネスチャンバ５の軸芯方向の下方に結晶搬出装置２０が設置される。結晶搬出装置２０は車輪２１を有して床面ＦＬ上を移動自在とされており、基台２２上に単結晶の受け台２３を昇降自在に設けている。また、前記昇降手段７によるファーネスチャンバ５の昇降範囲の上端は、ファーネスチャンバ５の下端面が真空室６のトップチャンバ６ｂの上端面と接続可能な接続位置Ｐ１から上昇して、前記位置決め手段１８の係合が外れて旋回可能となる旋回位置Ｐ２であり、下端は接続位置Ｐ１よりも低い、前記結晶搬出装置２０に単結晶８を受け渡し可能となる受け渡し位置Ｐ３である。
【００３３】
図４〜図６は、単結晶取出し時に用いる支持手段の説明図であり、それぞれ側面図、平面図及び正面図（図４のＳ−Ｓ矢視図）である。側面視でＬ字状の基台３３の上面には、正面視左右に１対のガイド部材３４，３４が取り付けられており、ガイド部材３４，３４の互いに対向する面にはそれぞれ前後にガイドローラ３６，３６が取着されている。また、フォーク状の支持部材、本実施例では左右１対の支持バー３１，３１を設けており、支持バー３１，３１の基端部内側は連結部材３２，３２により互いに連結され、支持バー３１，３１の外側の面にはそれぞれコの字状溝３１ａ，３１ａが形成されている。このコの字状溝３１ａ，３１ａ内に前記ガイド部材３４，３４のガイドローラ３６，３６が挿入されており、支持バー３１，３１はガイドローラ３６，３６によりファーネスチャンバ５内に移動自在となっている。１対の支持バー３１，３１の上面間には、側面の一部が切り欠かれた逆円錐形状面の貫通孔３５ａを有する受け治具３５が載せられている。また、基台３３の先端部下面には支柱３３ｂが取着されている。
【００３４】
ファーネスチャンバ５の扉１９が設けられた開口部５ｂよりも下方のファーネスチャンバ外側面には取付け面５ｄが形成されており、単結晶取出し時に、図示しないクレーン等で運ばれた支持手段３０の基台３３の前端面がこの取付け面５ｄにボルト等により取付けられるようになっている。尚、この取付け面５ｄは、扉１９の当接する端面５ｃよりも手前側即ちファーネスチャンバ５の外方側に位置しており、支持手段３０の取付け時に取付け面５ｄを損傷しない様にしてファーネスチャンバ５内の密閉度を保つようにしている。基台３３先端部の支柱３３ｂの下端部は、図６に示すように真空室６のトップチャンバ６ｂの上面に設けてある仮受台６ｅに載せられるようになっている。また、ファーネスチャンバ５の開口部５ｂと対向する側面には支持バー３１，３１の進退方向延長上にそれぞれ支持穴部５ｅ，５ｅが形成されており、支持バー３１，３１をファーネスチャンバ５内に移動させた時に支持バー３１，３１の先端部を支持穴部５ｅ，５ｅ内に挿入して支持させるようになっている。
【００３５】
次に、各部を詳細に説明する。
図７は支持手段３０の詳細斜視図である。左右１対の支持バー３１，３１の上面には、それぞれ内側に向かって切り欠き幅を徐々に大きくしたテーパ状の側面を有する切り欠き部３１ｂ，３１ｂが形成されており、この１対の支持バー３１，３１の切り欠き部３１ｂ，３１ｂ間に前記受け治具３５が水平方向に動かないように固定して搭載される。また、基台３３の上面の前端部には、少なくとも１個の位置決め部材３７が上方に突出して設けられており、支持バー３１，３１を前進させる際に連結部材３２の前端面を位置決め部材３７に当接させて受け治具３５の軸線が単結晶８の軸線と略一致するように設定している。
【００３６】
図８及び図９は支持バー３１に搭載された受け治具３５の平面図及び側面一部断面図を示している。受け治具３５は、略逆円錐台形の筒状を成しており、内側に単結晶８のコーン面形状に合った逆円錐形状面を有する貫通孔３５ａを形成し、外側下部に逆円錐形状の外側面３５ｃを有している。貫通孔３５ａの表面には、例えばテフロン等の合成樹脂からなるパッド３５ｆが接着されている。なお、図ではパッド３５ｆは貫通孔３５ａに連続的に接着されているが、離散的であってもよい。また、その外側面３５ｃの上端部にはつば部３５ｂを設けており、このつば部３５ｂを１対の支持バー３１，３１の切り欠き部３１ｂ，３１ｂ間に嵌挿して載せることにより受け治具３５は支持される。また、受け治具３５の一側面部には、外周面から中央部に至る、テーパ状の切り欠き面３５ｄを有する切り欠き部３５ｅが形成されており、この切り欠き部３５ｅがファーネスチャンバ５の軸芯へ向くように受け治具３５は支持バー３１，３１に載置される。切り欠き面３５ｄのテーパ角は、単結晶の下端部に形成されるテーパ角と略等しく設定されている。
【００３７】
図１０及び図１１は、結晶搬出装置の詳細図であり、図１０は側面一部断面図を、図１１は平面図を表している。これらの図において、基台２２の下部の前後左右に車輪２１を備え、基台２２の略中央部には同一円周上を略３等分した位置に３本のボールスクリュウ２６，２６，２６が立設されている。各ボールスクリュウ２６の下端部は基台２２を貫通しており、それぞれにスプロケット２９ａが取着されている。また、昇降台２４には前記各ボールスクリュウ２６に対応する位置３箇所に図示しないナット部材が貫通して装着され、このナット部材に各ボールスクリュウ２６が螺合しており、昇降台２４が昇降自在に取着されている。昇降台２４の上面略中央には、筒状支持台２５を介して略円筒形の受け台２３が取り付けられている。受け台２３の内側には逆円錐形状の孔を有しており、この逆円錐形状の孔で受け治具３５の外側面３５ｃを受けるようになっている。また、受け台２３の外周側面には、所定本数（本実施例では４本）の保持部材２７が取り付けられており、この複数の保持部材２７の間に単結晶８が囲まれて転倒防止のために保持されるようになっている。また、基台２２の端部近傍には電動サーボモータ等からなる昇降モータ２８が出力軸を基台２２より下方に突出させて取り付けられており、この出力軸にはスプロケット２９ｂが取着されている。このスプロケット２９ｂと各ボールスクリュウ２６のスプロケット２９ａとには、チェーン２９ｃが捲き回されて装着されている。尚、車輪２１は図示しない電動モータや油圧モータ等で回転駆動されている。
【００３８】
次に、図１２により作動を説明する。
ファーネスチャンバ５内での結晶の成長が完了した後、分離バルブ６ｄを閉じて真空室６とファーネスチャンバ５とを分離し、次にファーネスチャンバ５内にガスを注入して大気圧に戻した後に、扉１９を開ける。そして、図４に示すように支持手段３０の基台３３の前端面をファーネスチャンバ５の取付け面５ｄに取り付けて固定し、受け治具３５を搭載した支持バー３１，３１を連結部材３２の前端面が位置決め部材３７に当接するまで前進させる。これにより、受け治具３５の軸線がファーネスチャンバ５の軸線（即ち単結晶８の軸線）と略一致する。支持バー３１，３１の先端部は、ファーネスチャンバ５の支持穴部５ｅ，５ｅ内に挿入して支持させる。このとき、受け治具３５の切り欠き部３５ｅの切り欠き面３５ｄは、単結晶８のコーン面に接触しないようなテーパ面になっている。そして、引上げ手段１５により単結晶８を徐々に下げて、受け治具３５に単結晶８を載せて安定させる。このとき、パッド３５ｆにより単結晶８の表面に傷等が付かないように保護される。
【００３９】
次に、昇降駆動部７ｂによりファーネスチャンバ５を旋回位置Ｐ２まで上昇させた後、旋回手段３により結晶引上げ位置Ａから結晶取出し位置Ｂまで旋回させる。そして、図１２（ａ）に示すように、結晶取出し位置Ｂに結晶搬出装置２０を移動し、受け台２３の軸線が単結晶８の軸線と一致するように結晶搬出装置２０を設置する。この後、昇降モータ２８により昇降台２４を介して受け台２３を結晶受け高さまで上昇させる。次に、図１２（ｂ）に示すように、昇降駆動部７ｂによりファーネスチャンバ５を所定距離下降させ、図９及び図１０に示すように支持バー３１，３１に載った受け治具３５を結晶搬出装置２０の受け台２３の内側穴内に挿入して載せる。このとき、図示しない荷重検出手段により索条１７にかかる荷重を検出し、その荷重がゼロになった時、即ち単結晶８の全荷重が結晶搬出装置２０の受け台２３にかかった時にファーネスチャンバ５の下降を停止する。そして、種結晶部を切断した後、さらに所定距離ファーネスチャンバ５を下げて結晶排出位置Ｐ３で停止させる。これにより、受け治具３５が支持バー３１，３１の切り欠き部３１ｂ，３１ｂから上方に外れるので、この後に支持バー３１，３１を後退させてファーネスチャンバ５から引き抜く。
【００４０】
次に、図１２（ｃ）に示すように、昇降モータ２８により受け台２３を収納位置Ｐ４まで下降させて単結晶８を結晶搬出装置２０内に収納し、さらに図１２（ｄ）に示すように、昇降駆動部７ｂによりファーネスチャンバ５を旋回位置Ｐ２まで上昇させる。このとき、図１０に示すように、単結晶８は受け台２３の外周部の保持部材２７により転倒防止のために保持される。従って、ファーネスチャンバ５の下端位置は単結晶８の上端位置よりも上方になり、この後ファーネスチャンバ５から支持手段３０を取り外してファーネスチャンバ５を旋回させても、また結晶搬出装置２０を搬出のため移動させても、単結晶８とファーネスチャンバ５とが接触することはない。
【００４１】
尚、本発明に係るフォーク状の支持部材は、実施形態に記載の左右１対の支持バーに限定されず、左右に複数あれば良く、単結晶取出し時に左右フォーク間の隙間を介して受け治具及び受け台と干渉することなく支持部材を引き抜くことができるものであれば良い。これにより、単結晶を支持した受け治具を受け台に載せた状態で支持部材を容易に、かつスムースにファーネスチャンバ外に移動できる。
【００４２】
また、支持部材上に設ける固定手段は、上記実施形態の切り欠き部３１ｂに限定されず、要は受け治具が水平方向に動かないように固定できればよく、例えば上方に突出する突起やピン等であっても構わない。この場合、突起やピンは受け治具の外周部を囲んだり、外周部に孔に挿入されることによって固定でき、受け治具を外すことも容易にできる。
【００４３】
本発明により、以下のような効果を奏する。
（１）ファーネスチャンバ内で、単結晶のコーン面を受け治具により面で受けて支持し、この受け治具と共に単結晶をファーネスチャンバ内から取出すようにしたから、単結晶の引上げ完了後から取出し時点まで安定に単結晶を支持できる。これにより、取出し過程の途中で種結晶部の破損等のように単結晶の上方からの支持が無くなった場合でも、単結晶の倒れを防止して確実に破損を無くすことができる。
（２）結晶取出し位置において、ファーネスチャンバを所定距離下降させて真空室との接続位置よりもさらに低い位置まで下げ、この低い位置で単結晶をファーネスチャンバから取出して結晶搬出装置に受け渡すから、結晶搬出装置の受け台の昇降ストロークを短くできることにより、単結晶インゴットが長尺化しても結晶搬出装置の小型化及びコスト低減ができる。しかも、結晶搬出装置の受け台の下降中に結晶が転倒する可能性が小さい。また、作業者がファーネスチャンバの低い位置で、種結晶部の切断作業、ファーネスチャンバ内からの支持手段の抜き取り作業、及びファーネスチャンバ内の清掃作業等を行えるので、作業の安全性をより高めることができ、作業性を向上できる。
【００４４】
（３）受け治具の結晶受け面を単結晶コーン面形状に合わせているので、単結晶を非常に安定に受けて支持でき、転倒を防止できる。
（４）受け治具の側面部に外周側面から中央部に至る切り欠き部を設け、受け治具をファーネスチャンバ内に搬入して単結晶のコーン面に装着する際に、この切り欠き部を単結晶の軸芯に向けて搬入することにより、単結晶を引上げ完了位置のままにして前記コーン面と略同一高さで受け治具を略水平方向に移動させることができる。これにより、受け治具で単結晶を受ける為の単結晶の移動距離が短くて済むので安全性が向上する。また、上記切り欠き部の面形状を単結晶のコーン面に合ったテーパ状に形成したので、切り欠き部を最小限にでき、受け治具の強度を維持できる。
【００４５】
（５）支持手段のフォーク状の支持部材の間に載置した受け治具の下方から結晶搬出装置の受け台を持上げることにより、受け治具を支持部材から外し、この後支持部材をファーネスチャンバ外に移動させるようにしたので、結晶搬出装置の受け台での受け治具の支持と、この後の支持部材の引き抜きとを容易に、かつスムースに行うことができ、作業性が良い。
（６）結晶搬出装置の受け台の内側孔を、前記受け治具の外周面のテーパ形状に合わせて形成しているので、受け治具を安定に載せることができ、ファーネスチャンバ内からの単結晶取出し時の単結晶の転倒を確実に防止できる。
【図面の簡単な説明】
【図１】本実施形態に係る単結晶引上げ装置の側面図である。
【図２】本実施形態に係る単結晶引上げ装置の平面図である。
【図３】結晶取出し位置に旋回させたファーネスチャンバの側面図である。
【図４】単結晶の支持手段の側面図である。
【図５】単結晶の支持手段の平面図であり、図４のＸ−Ｘ矢視図である。
【図６】単結晶の支持手段の正面図であり、図４のＳ−Ｓ矢視図である。
【図７】単結晶の支持手段の詳細斜視図である。
【図８】支持バーに搭載された受け治具の平面図である。
【図９】支持バーに搭載された受け治具の側面一部断面図である。
【図１０】結晶搬出装置の詳細図であり、図１１のＹ−Ｙ視図である。
【図１１】結晶搬出装置の詳細図である。
【図１２】作動の説明図である。
【図１３】従来の結晶引上げ装置の側面一部断面図である。
【図１４】従来の結晶引上げ装置の作動説明図である。
【符号の説明】
１…コラム、２…ブラケット、３…旋回手段、３ａ…旋回軸、３ｂ…旋回筒、４…旋回モータ、５…ファーネスチャンバ、５ａ…支持部材、５ｂ…開口部、５ｄ…取付け面、５ｅ…支持穴部、６…真空室、６ａ…メインチャンバ、６ｂ…トップチャンバ、６ｄ…分離バルブ、７…昇降手段、７ａ…昇降部材、７ｂ…油圧シリンダ（昇降駆動部）、７ｃ…ロッド（昇降部）、８…単結晶、１１…ベース、１２…架台、１４…回転手段、１５…引上げ手段、１７…索条、１８…位置決め手段、１９…扉、２０…結晶搬出装置、２２…基台、２３…受け台、２４…昇降台、２６…ボールスクリュウ、２７…保持部材、２８…昇降モータ、２９ａ，２９ｂ…スプロケット、２９ｃ…チェーン、３０…支持手段、３１…支持バー（支持部材）、３１ａ…溝、３１ｂ…切り欠き部（固定手段）、３２…連結部材、３３…基台、３４…ガイド部材、３５…受け治具、３５ａ…貫通孔、３５ｂ…つば部、３５ｄ…切り欠き面、３５ｅ…切り欠き部、３６…ガイドローラ（移動手段）、３７…位置決め部材、Ａ…結晶引上げ位置、Ｂ…結晶取出し位置、Ｐ１…接続位置、Ｐ２…旋回位置、Ｐ３…受け渡し位置、ＦＬ…床面。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor single crystal pulling apparatus for turning a furnace chamber to a crystal take-out position in a state where the grown single crystal is pulled into the furnace chamber, and taking out the single crystal from the furnace chamber to the outside and taking out the single crystal. Regarding the method.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, for example, a semiconductor single crystal is pulled and manufactured by a silicon semiconductor crystal pulling apparatus using the Czochralski method, and a silicon wafer used for a semiconductor integrated circuit or the like is manufactured by thinly slicing the semiconductor single crystal. In recent years, there has been a demand for larger semiconductor single crystals (larger diameter, longer length, and higher weight) for higher integration of integrated circuits. For this reason, the load on the seed crystal portion of the single crystal has been increased. The possibility that the seed crystal part is increased and the seed crystal part is broken is rapidly increasing. Therefore, there is a strong demand for a pulling device that can safely and reliably manufacture a large-diameter and heavy semiconductor single crystal (without being damaged).
[0003]
As such a pulling apparatus, for example, a crystal processing apparatus disclosed in Japanese Patent Publication No. 60-41038 is known, and the prior art will be described below based on the contents of the publication. FIGS. 13 and 14 are a partial cross-sectional side view and an operation explanatory diagram of the crystal processing apparatus described in the publication. In these figures, a crucible 82 containing a melt 83 such as silicon is rotatably and vertically moved in a lower melt chamber 80 formed in a cylindrical shape. A separation valve 81 is provided at an upper portion of 80. Above the lower melt chamber 80, a cylindrical crystal receiving upper chamber 86 is disposed that can be lifted and swiveled with respect to the lower melt chamber 80 by a hoist or derrick 85. A pulling head device (crystal pulling means) 87 for pulling up the grown single crystal 89 via a chain 88 is provided on the top of the head. Further, a lock pin 90 is provided in the vicinity of the lower end of the crystal receiving upper chamber 86 so as to be slidable in the radial direction, and the grown single crystal is formed by projecting the lock pin 90 inward to a support position. 89 is supported.
[0004]
As shown in FIG. 13, a crystal receiving and conveying device 91 having a cart 92 with wheels is disposed below the crystal receiving upper chamber 86 in a state of being swung to the crystal discharging position. The crystal receiving and conveying device 91 includes a chamber support 94, and a separate upright cylindrical lower crystal receiving chamber 93 having an open top is disposed in the chamber support 94. The lower crystal receiving chamber 93 is disposed at a position coincident with the axis of the upper chamber 86. The cart 92 also has a hoist or elevator pulley device, by which the lower crystal receiving chamber 93 is raised and lowered in the chamber support 94. Further, the lower crystal receiving chamber 93 has a support bar 95 lifted to support the growth crystal 89, an elevator device 96, and a platform 97, whereby the platform 97 is as shown in FIG. It is movable between a lower position and a lifted position as shown in FIG.
[0005]
Explaining the operation in the above configuration, when the growth of the crystal 89 is completed, the pulling head device 87 lowers the crystal 89 on the lock pin 90 inserted in the support position of the crystal receiving upper chamber 86 by the chain 88. Next, the upper chamber 86 is disconnected from the lower melt chamber 80 by the separation valve 81 and then opened to the atmosphere, and the upper chamber 86 is separated from the separation valve 81 and the lower melt chamber 80. Next, the hoist 85 lifts the upper chamber 86 and the pulling head device 87 slightly, and further swivels them to move them to the side without the lower melt chamber 80. Then, the crystal receiving and conveying device 91 is moved to such a position that the lower crystal receiving chamber 93 is positioned below the upper chamber 86 in the axial direction. Thereafter, the lower crystal receiving chamber 93 is lifted and connected to the bottom of the upper chamber 86, and the elevator device 96 in the lower crystal receiving chamber 93 is lifted so that the support bar 95 on the platform 97 is not interfered with the lock pin 90. To a position where the lower part of the crystal 89 is supported. Next, the elevator device 96 is gently lowered to store the crystal 89 in the lower crystal receiving chamber 93. Thereafter, the lower crystal receiving chamber 93 is lowered and separated from the upper chamber 86, and the crystal 89 is transported by the cart 92. .
[0006]
[Problems to be solved by the invention]
However, the one disclosed in the above Japanese Patent Publication No. 60-41038 has the following problems.
(1) Since the lower portion of the crystal 89 is supported only by the lock pin 90 when the crystal receiving upper chamber 86 is swung to the side without the lower melt chamber 80, the crystal 89 and the chain 88 are If the seed crystal portion of the joint portion is damaged, the crystal 89 cannot be held vertically, and the crystal 89 may fall over and come into contact with the inner wall surface of the upper chamber 86, resulting in damage to the crystal. The safety is not fully satisfactory. Further, since the crystal 89 is in an inclined and unstable state, when the elevator device 96 in the lower crystal receiving chamber 93 is lifted, it cannot be stably supported by the support bar 95. For this reason, the elevator device 96 is lowered and the crystal is lowered. 89 cannot be housed in the lower crystal receiving chamber 93 without being damaged.
(2) After the crystal receiving upper chamber 86 is swung to the side without the lower melt chamber 80, it is necessary to raise the lower crystal receiving chamber 93 to the lower end position of the crystal receiving upper chamber 86. Accordingly, the stroke at the time of raising and lowering becomes longer, and therefore the crystal receiving and conveying device 91 tends to be large. For this reason, as the crystal 89 becomes longer, it becomes difficult to reduce the size of the crystal receiving / transporting device 91, the manufacturing cost increases, and the possibility of the falling crystal 89 falling is increased.
[0007]
The present invention has been made paying attention to the above-mentioned problems, and provides a semiconductor single crystal pulling apparatus and a method for taking out the single crystal that can be stably taken out from the chamber without overturning the crystal even if the seed crystal part or the like is damaged. The purpose is to do.
[0008]
[Means, actions and effects for solving the problems]
In order to achieve the above object, the first aspect of the present invention winds up a furnace chamber that houses a single crystal grown and pulled up in a vacuum chamber, and a rope that is disposed on the furnace chamber and that suspends the single crystal. In the semiconductor single crystal pulling apparatus, comprising a pulling means, a furnace chamber and a turning means for turning the pulling means between the crystal pulling position and the crystal extracting position, the furnace chamber has an opening provided with an openable / closable door Is formed on the lower side surface, can be lowered to a delivery position lower than the connection position with the vacuum chamber when the single crystal is taken out, and is further received and supported by the cone surface at the lower end of the single crystal when the single crystal is taken out. It is attached to the side of the jig and the furnace chamber, and can be moved into the furnace chamber from the opening with the receiving jig mounted. A support means that has a support member and supports the single crystal through the receiving jig by carrying the receiving jig into the furnace chamber by the support member when the single crystal is taken out, and installed below the furnace chamber at the crystal take-out position. A cradle for lifting and placing the receiving jig supporting the single crystal from below the support means is provided so as to be movable up and down, and a crystal unloading device for receiving the single crystal in a state of being placed on the jig. It is configured.
[0009]
According to the first aspect of the present invention, after the pulling of the single crystal is completed, the receiving jig is carried into the furnace chamber by the support member that is movable on the side surface of the furnace chamber, and the single crystal cone Since the surface is received and supported by the receiving jig placed on the support member, the single crystal can be stably supported. Then, the cradle of the crystal unloading device is raised at the crystal take-out position, placed on the cradle on which the single crystal is placed, and lowered with the cradle together with the cradle. Take out from the chamber and store in the crystal unloading device. In this way, since the cone surface of the single crystal is received and supported by the jig from the completion of the pulling up until the single crystal is stored in the crystal unloading device, the seed crystal part etc. may be damaged by any chance. Since the single crystal is stably supported by the receiving jig even when the support from above is lost, damage to the single crystal can be reliably prevented. In addition, since the single crystal is taken out at a low position in the furnace chamber, the lift stroke of the cradle of the crystal carry-out device can be shortened, and the size and cost can be reduced. Furthermore, since the operator can perform the cutting operation of the seed crystal part, the operation of extracting the support means from the inside of the furnace chamber, the cleaning operation of the inside of the furnace chamber, etc. at a lower position of the furnace chamber, the work safety can be further improved. Workability can be improved.
[0010]
In a second aspect based on the first aspect, the receiving jig has an inverted conical hole that matches the shape of a single crystal cone surface.
[0011]
According to the second invention, since the receiving jig stably supports the tapered surface of the single crystal by inserting the tapered surface into the inverted conical hole, the single crystal falls down even if the seed crystal or the like is damaged. Therefore, breakage and damage of the single crystal can be reliably prevented.
[0012]
A third invention is based on the first or second invention, wherein the receiving jig has a notch portion on one side surface portion extending from the outer peripheral surface to the central portion.
[0013]
According to the third invention, the receiving jig can be moved below the single crystal in the single crystal pulling completion position, and then the single crystal is pulled by the pulling means until the receiving jig receives the single crystal. By lowering, the single crystal and the receiving jig are brought into contact, and the jig receives a part of the weight of the single crystal, thereby reducing the burden on the seed crystal part and preventing the seed crystal part from being damaged. The furnace chamber can be swung up and down.
[0014]
4th invention is based on 1st, 2nd or 3rd invention, the said support means makes the said support member into a fork shape, and fixes the said receiving jig to the upper part of a support member so that a horizontal direction may not be moved. A fixing means is provided, and a moving means is provided for allowing the receiving jig placed on the support member to move freely in the furnace chamber.
[0015]
According to the fourth invention, since the support member of the support means is configured in a fork shape, the configuration is simplified, and when the single crystal is taken out by placing the receiving jig on the cradle of the crystal unloading device, the support member is received from the support member. Since the jig can be removed easily and smoothly, workability is good.
[0016]
The fifth invention is a semiconductor single crystal pulling method in which a furnace chamber for storing a single crystal pulled up is swung from a crystal pulling position to a crystal pulling position in a state where the single crystal is suspended by a rope, and the single crystal is taken out from the furnace chamber. In the single crystal extraction method of the apparatus, after the pulling of the single crystal is completed, a receiving jig having a hole matching the cone shape of the single crystal is carried into the furnace chamber, and the single crystal is placed on the receiving jig. And a second step of taking out the single crystal from the furnace chamber in a state where the single crystal is received and placed on the jig at the position of taking out the crystal.
[0017]
According to the fifth invention, the cone surface of the single crystal is received and supported by the receiving jig having a hole that matches the cone shape from the completion of the pulling of the single crystal to the removal step from the furnace chamber. Even if one kind of crystal part is broken, the single crystal does not fall down and can be supported in a stable state.
[0018]
A sixth invention is a method based on the fifth invention, wherein the method further comprises a step of turning the furnace chamber to the crystal extraction position together with the single crystal placed on the receiving jig after the first step.
[0019]
According to the sixth invention, in addition to the effects of the fifth invention, the furnace chamber is swung to the crystal take-out position while the single crystal is supported by the receiving jig. The single crystal can be taken out from the furnace chamber.
[0020]
The seventh invention is based on the fifth or sixth invention, and in the second step, the single crystal is received and placed on the jig at the crystal take-out position, and the furnace chamber is lowered together with the jig to a predetermined position. This is characterized in that it is a step of taking out the crystal together with the jig from the furnace chamber.
[0021]
According to the seventh invention, in addition to the effects of the fifth and sixth inventions, the furnace chamber is lowered together with the single crystal receiving jig by a predetermined distance to reduce the height when the single crystal is taken out by the crystal carry-out device. The lifting stroke of the cradle of the carry-out device is reduced. As a result, the crystal unloading apparatus can be reduced in size and manufactured at a low cost, and the single crystal is less likely to fall while the cradle of the crystal unloading apparatus is lowered. In addition, the operator can cut the seed crystal part and remove the support means from the furnace chamber at a lower position in the furnace chamber, so that the safety of the work can be further improved and the workability improved. it can.
[0022]
According to an eighth aspect of the present invention, there is provided a semiconductor single crystal in which a furnace chamber for storing the pulled single crystal is swung from a crystal pulling position to a crystal extracting position while the single crystal is suspended by a rope, and the single crystal is taken out from the furnace chamber. In the pulling device single crystal extraction method, after the pulling of the single crystal is completed, the step of placing the single crystal on a receiving jig that receives and supports the cone surface of the single crystal in the furnace chamber; The step of rotating the furnace chamber together with the mounted single crystal to the crystal extraction position, and then lowering the furnace chamber to the predetermined position together with the jig while receiving the single crystal on the jig at the crystal extraction position. The step of placing the jig on the cradle of the crystal unloading device and delivering the single crystal to the cradle, and then lowering the cradle and removing the single crystal placed on the receiving jig. Removed from the Anesuchanba, and a method and a step of storing the crystal unloading device.
[0023]
According to the eighth invention, after the pulling of the single crystal is completed, the furnace chamber is swung to the crystal take-out position and the single crystal is received from the furnace chamber and supported by the jig until the single crystal is taken out from the furnace chamber. Therefore, even if all kinds of crystal parts are broken, the single crystal does not fall down and can be supported reliably in a stable state. Furthermore, since the furnace chamber is lowered by a predetermined distance at the crystal take-out position to reduce the height at the time of taking out the single crystal from the furnace chamber by the crystal carry-out device, the lifting stroke of the cradle of the crystal carry-out device is reduced. The crystal carry-out device can be reduced in size and manufactured at low cost, and the possibility that the single crystal will fall while the cradle is lowered can be reduced.
[0024]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, a semiconductor single crystal pulling apparatus according to the present invention will be described in detail with reference to the drawings.
[0025]
1 and 2 are a side view and a plan view of a single crystal pulling apparatus, respectively. A vacuum chamber 6 (corresponding to the lower melt chamber 80 described in the prior art column) is mounted on the upper surface of the base 12 provided on the base 11 installed at a position lower than the floor surface FL. The vacuum chamber 6 includes a lower main chamber 6a in which a crucible (not shown) that stores a melt such as silicon is provided, and a top chamber 6b that seals an opening on the upper surface of the main chamber 6a so that the opening can be opened and closed. The top chamber 6b is rotatable in the horizontal direction with respect to the main chamber 6a in order to improve workability when the crucible is filled with the silicon material.
[0026]
The lower end portion of the cylindrical furnace chamber 5 (corresponding to the crystal receiving upper chamber 86 described in the prior art section) is detachably connected to the opening 6c at the top of the top chamber 6b. The top chamber 6b A separation valve 6d for maintaining the degree of vacuum in the vacuum chamber 6 when the furnace chamber 5 is cut off is disposed on the upper part. The furnace chamber 5 is provided in a substantially vertical direction, and is supported by a turning shaft 3a of the turning means 3 via a support member 5a so as to be turnable. In the vicinity of the lower end of the side surface of the furnace chamber 5, an opening to which a door 19 that can be opened and closed is attached is provided. The lower part of the swivel shaft 3a is fixed to the gantry 12, and is attached between a pair of upper and lower brackets 2 and 2 provided on the upper part of the column 1 erected in a substantially vertical direction. Further, a swivel cylinder 3b is supported on the swivel shaft 3a so as to be able to swivel and move up and down, and the furnace chamber 5 is attached to the swivel cylinder 3b via the support member 5a.
[0027]
The turning motor 4 of the turning means 3 is attached to the lower end portion of the support member 5a, and the output shaft of the turning motor 4 is connected to the upper end portion of the intermediate shaft 4a via a belt (not shown), and is connected to the lower end portion of the intermediate shaft 4a. The attached gear meshes with a gear 3c that is slidably inserted into the turning shaft 3a. The gear 3c is fixed to the upper surface of the elevating member 7a of the elevating means 7 that is slidably inserted into the revolving shaft 3a. Yes. As shown in FIG. 2, the turn chamber 4 turns the furnace chamber 5 between the crystal pulling position A and the crystal take-out position B around the turning shaft 3a via the turning cylinder 3b.
[0028]
The elevating means 7 includes an elevating drive unit 7b made of a hydraulic cylinder or a direct acting actuator composed of a motor, a ball screw, and a nut member. In this embodiment, the elevating means 7 is shown as an example of a hydraulic cylinder. The drive side (tube in the case of a cylinder) upper end part of this raising / lowering drive part 7b is attached to the said lower bracket 2 which fixes the lower end part of the rotating shaft 3a. Further, the driven side of the elevating drive unit 7b protruding upward and downward, that is, the upper end of the elevating unit (rod 7c in the case of a cylinder) is attached to the outer peripheral part of the elevating member 7a. Further, a part of the outer peripheral surface of the elevating member 7a is brought into contact with a non-rotating guide (not shown) provided in the vertical direction on the column 1, and the elevating member 7a is moved along the turning shaft 3a by the elevating drive unit 7b. In order to prevent it from rotating when it is lifted up and down, a detent is made.
[0029]
A pulling means 15 is attached to the upper portion of the furnace chamber 5 via a support base 13 and a rotating means 14. The pulling means 15 includes a hoisting machine (not shown) that winds the wire 17 made of a wire, a cable, or the like in a housing 15b provided with an openable / closable cover 15a on the top. The rope 17 fed out from the hoisting machine is suspended in the furnace chamber 5 through the rotating means 14 and the support base 13, and a seed crystal (not shown) attached to the tip thereof is attached. Yes.
[0030]
The rotating means 14 is rotatably supported by the support base 13 and includes a rotating shaft 14a that supports the pulling means 15 from below. The rotating means 14 is connected to the rotating shaft 14a via an endless belt 14b wound around the outer periphery thereof. And a rotational drive source 14c composed of an electric servo motor or the like. When the single crystal is pulled, the pulling means 15 is rotated at a predetermined speed by servo-controlling the rotation drive source 14c.
[0031]
A positioning means 18 is provided between the upper ends of the support base 13 and the column 1. This positioning means 18 is for accurately positioning the pulling means 15 at the crystal pulling position A when the furnace chamber 5 is swung from the crystal take-out position B to the crystal pulling position A. Positioning is performed with high accuracy.
[0032]
FIG. 3 is a side view when the furnace chamber 5 is turned to the crystal extraction position B. FIG. When the single crystal is taken out, the crystal carry-out device 20 is installed below the furnace chamber 5 in the axial direction. The crystal carry-out device 20 has wheels 21 and is movable on the floor surface FL. A single crystal cradle 23 is provided on a base 22 so as to be movable up and down. Further, the upper end of the raising / lowering range of the furnace chamber 5 by the raising / lowering means 7 rises from the connection position P1 where the lower end surface of the furnace chamber 5 can be connected to the upper end face of the top chamber 6b of the vacuum chamber 6, and the positioning means 18 Is a turning position P2 at which the engagement is disengaged, and the lower end is a delivery position P3 that is lower than the connection position P1 and at which the single crystal 8 can be delivered to the crystal unloading device 20.
[0033]
4-6 is explanatory drawing of the support means used at the time of taking out a single crystal, and are a side view, a top view, and a front view (SS arrow view of FIG. 4), respectively. A pair of guide members 34, 34 are attached to the upper surface of the L-shaped base 33 in a side view when viewed from the front, and left and right as viewed from the front. 36 and 36 are attached. In addition, a fork-like support member, in this embodiment, a pair of left and right support bars 31, 31 is provided. The base end portions of the support bars 31, 31 are connected to each other by connecting members 32, 32. , 31 are formed with U-shaped grooves 31a, 31a, respectively. Guide rollers 36, 36 of the guide members 34, 34 are inserted into the U-shaped grooves 31a, 31a, and the support bars 31, 31 can be moved into the furnace chamber 5 by the guide rollers 36, 36. ing. Between the upper surfaces of the pair of support bars 31, 31, a receiving jig 35 having a through-hole 35a having an inverted conical surface with a part of the side surface cut away is placed. A support 33 b is attached to the bottom surface of the tip of the base 33.
[0034]
A mounting surface 5d is formed on the outer surface of the furnace chamber below the opening 5b in which the door 19 of the furnace chamber 5 is provided, and the base of the supporting means 30 carried by a crane or the like (not shown) when the single crystal is taken out. The front end surface of the base 33 is attached to the attachment surface 5d with a bolt or the like. The mounting surface 5d is located on the front side, that is, on the outer side of the furnace chamber 5 with respect to the end surface 5c with which the door 19 abuts, so that the mounting chamber 5d is not damaged when the support means 30 is mounted. The degree of sealing in 5 is maintained. As shown in FIG. 6, the lower end portion of the support 33 b at the tip of the base 33 is placed on a temporary support 6 e provided on the upper surface of the top chamber 6 b of the vacuum chamber 6. Also, support holes 5e and 5e are formed on the side surfaces of the furnace chamber 5 facing the opening 5b on the extension of the support bars 31 and 31, respectively. The support bars 31 and 31 are placed in the furnace chamber 5, respectively. When moved, the end portions of the support bars 31, 31 are inserted into the support holes 5e, 5e to be supported.
[0035]
Next, each part will be described in detail.
FIG. 7 is a detailed perspective view of the support means 30. On the upper surfaces of the pair of left and right support bars 31, 31 are formed notch portions 31b, 31b having tapered side surfaces with gradually increasing notch widths toward the inside, respectively. The receiving jig 35 is fixedly mounted between the notches 31b and 31b of the bars 31 and 31 so as not to move in the horizontal direction. In addition, at least one positioning member 37 is provided on the front end portion of the upper surface of the base 33 so as to protrude upward. When the support bars 31 are advanced, the front end surface of the connecting member 32 is positioned on the positioning member 37. The axis of the receiving jig 35 is set so that it substantially coincides with the axis of the single crystal 8.
[0036]
8 and 9 show a plan view and a side sectional view of the receiving jig 35 mounted on the support bar 31. FIG. The receiving jig 35 has a substantially inverted frustoconical cylindrical shape, and has a through hole 35a having an inverted conical surface that matches the cone surface shape of the single crystal 8 on the inner side, and an inverted conical shape on the lower outer side. The outer side surface 35c is provided. A pad 35f made of a synthetic resin such as Teflon is bonded to the surface of the through hole 35a. In the figure, the pad 35f is continuously bonded to the through hole 35a, but may be discrete. A flange 35b is provided at the upper end of the outer side surface 35c, and the flange 35b is fitted between the notches 31b and 31b of the pair of support bars 31 and 31 and placed thereon. 35 is supported. Further, a notch portion 35e having a tapered notch surface 35d extending from the outer peripheral surface to the center portion is formed on one side surface portion of the receiving jig 35, and this notch portion 35e is formed in the furnace chamber 5. The receiving jig 35 is placed on the support bars 31 so as to face the axis. The taper angle of the cut-out surface 35d is set substantially equal to the taper angle formed at the lower end of the single crystal.
[0037]
10 and 11 are detailed views of the crystal carry-out device, in which FIG. 10 is a side sectional view and FIG. 11 is a plan view. In these drawings, wheels 21 are provided on the front, rear, left, and right of the lower part of the base 22, and three ball screws 26, 26, 26 are provided at substantially central portions of the base 22 at positions substantially equally divided on the same circumference. Is erected. The lower end of each ball screw 26 penetrates the base 22, and a sprocket 29a is attached to each. Further, a nut member (not shown) is inserted through the lifting platform 24 at three positions corresponding to the respective ball screws 26, and each ball screw 26 is screwed to the nut member. It is attached freely. A substantially cylindrical cradle 23 is attached to a substantially upper center of the lift 24 via a cylindrical support 25. An inner side of the cradle 23 has an inverted conical hole, and the outer surface 35c of the receiving jig 35 is received by the inverted conical hole. In addition, a predetermined number (four in this embodiment) of holding members 27 are attached to the outer peripheral side surface of the cradle 23, and the single crystal 8 is surrounded between the plurality of holding members 27 to prevent overturning. In order to be retained. Further, an elevating motor 28 made of an electric servo motor or the like is attached near the end of the base 22 so that the output shaft protrudes downward from the base 22, and a sprocket 29b is attached to the output shaft. Yes. A chain 29c is wound around and attached to the sprocket 29b and the sprocket 29a of each ball screw 26. The wheel 21 is rotationally driven by an electric motor or hydraulic motor (not shown).
[0038]
Next, the operation will be described with reference to FIG.
After the crystal growth in the furnace chamber 5 is completed, the separation valve 6d is closed to separate the vacuum chamber 6 and the furnace chamber 5, and then gas is injected into the furnace chamber 5 to return to atmospheric pressure. Open the door 19. Then, as shown in FIG. 4, the front end surface of the base 33 of the support means 30 is attached and fixed to the attachment surface 5 d of the furnace chamber 5, and the support bars 31, 31 on which the receiving jig 35 is mounted are connected to the front end of the connecting member 32. The surface is advanced until it comes into contact with the positioning member 37. Thereby, the axis of the receiving jig 35 substantially coincides with the axis of the furnace chamber 5 (that is, the axis of the single crystal 8). The tips of the support bars 31 are inserted into the support holes 5e and 5e of the furnace chamber 5 and supported. At this time, the notch surface 35 d of the notch 35 e of the receiving jig 35 is a tapered surface that does not contact the cone surface of the single crystal 8. Then, the single crystal 8 is gradually lowered by the pulling means 15, and the single crystal 8 is placed on the receiving jig 35 and stabilized. At this time, the pad 35f protects the surface of the single crystal 8 so as not to be scratched.
[0039]
Next, the furnace chamber 5 is raised to the turning position P2 by the lifting drive unit 7b, and then turned from the crystal pulling position A to the crystal extraction position B by the turning means 3. Then, as shown in FIG. 12A, the crystal carry-out device 20 is moved to the crystal take-out position B, and the crystal carry-out device 20 is installed so that the axis of the cradle 23 coincides with the axis of the single crystal 8. Thereafter, the cradle 23 is raised to the crystal receiving height by the lift motor 28 via the lift 24. Next, as shown in FIG. 12B, the furnace chamber 5 is lowered by a predetermined distance by the elevating drive unit 7b, and the receiving jig 35 placed on the support bars 31, 31 is crystallized as shown in FIGS. It is inserted into the inner hole of the cradle 23 of the carry-out device 20 and placed. At this time, a load applied to the rope 17 is detected by a load detection means (not shown), and when the load becomes zero, that is, when the entire load of the single crystal 8 is applied to the cradle 23 of the crystal unloading device 20, Stop descent of 5. Then, after cutting the seed crystal part, the furnace chamber 5 is further lowered by a predetermined distance and stopped at the crystal discharge position P3. As a result, the receiving jig 35 is disengaged upward from the cutout portions 31 b and 31 b of the support bars 31 and 31. Thereafter, the support bars 31 and 31 are retracted and pulled out from the furnace chamber 5.
[0040]
Next, as shown in FIG. 12 (c), the cradle 23 is lowered to the storage position P4 by the lifting motor 28 to store the single crystal 8 in the crystal unloading device 20, and further as shown in FIG. 12 (d). Then, the furnace chamber 5 is raised to the turning position P2 by the elevating drive unit 7b. At this time, as shown in FIG. 10, the single crystal 8 is held by the holding member 27 on the outer peripheral portion of the cradle 23 to prevent falling. Accordingly, the lower end position of the furnace chamber 5 is higher than the upper end position of the single crystal 8. After that, the support means 30 is removed from the furnace chamber 5 and the furnace chamber 5 is swung. Therefore, even if it is moved, the single crystal 8 and the furnace chamber 5 do not come into contact with each other.
[0041]
Note that the fork-shaped support member according to the present invention is not limited to the pair of left and right support bars described in the embodiment, and a plurality of support bars may be provided on the left and right sides. Any member can be used as long as the support member can be pulled out without interfering with the tool and the cradle. Accordingly, the support member can be easily and smoothly moved out of the furnace chamber in a state where the receiving jig supporting the single crystal is placed on the receiving table.
[0042]
Further, the fixing means provided on the support member is not limited to the notch portion 31b of the above-described embodiment. In short, it is only necessary that the receiving jig can be fixed so as not to move in the horizontal direction. It does not matter. In this case, the protrusion and the pin can be fixed by surrounding the outer peripheral portion of the receiving jig or being inserted into the hole in the outer peripheral portion, and the receiving jig can be easily removed.
[0043]
The present invention has the following effects.
(1) In the furnace chamber, the cone surface of the single crystal is received and supported by a jig, and the single crystal is taken out from the furnace chamber together with the receiving jig. A single crystal can be supported stably until the time of removal. Thereby, even when the support from above of the single crystal is lost during the extraction process, such as damage to the seed crystal portion, the single crystal can be prevented from falling and reliably damaged.
(2) At the crystal take-out position, the furnace chamber is lowered by a predetermined distance and lowered to a position lower than the connection position with the vacuum chamber, and the single crystal is taken out from the furnace chamber at this low position and delivered to the crystal carry-out device. Since the lifting / lowering stroke of the cradle of the crystal carry-out device can be shortened, the crystal carry-out device can be reduced in size and cost even when the single crystal ingot is lengthened. In addition, there is a low possibility that the crystals will fall while the cradle of the crystal carry-out device is lowered. In addition, the operator can perform the cutting operation of the seed crystal part, the operation of extracting the support means from the inside of the furnace chamber, the cleaning operation of the inside of the furnace chamber, etc. at a lower position of the furnace chamber, thereby further improving the safety of the operation. Workability can be improved.
[0044]
(3) Since the crystal receiving surface of the receiving jig is matched to the shape of the single crystal cone surface, the single crystal can be received and supported very stably, and toppling can be prevented.
(4) A notch portion extending from the outer peripheral side surface to the center portion is provided on the side surface portion of the receiving jig, and when the receiving jig is loaded into the furnace chamber and mounted on the cone surface of the single crystal, By carrying it in toward the axis of the single crystal, the receiving jig can be moved in a substantially horizontal direction at substantially the same height as the cone surface, with the single crystal remaining in the pulled-up completion position. Thereby, since the movement distance of the single crystal for receiving a single crystal with a receiving jig may be short, safety is improved. Further, since the surface shape of the notch is formed in a taper shape that matches the cone surface of the single crystal, the notch can be minimized and the strength of the receiving jig can be maintained.
[0045]
(5) Lifting the cradle of the crystal carry-out device from below the receiving jig placed between the fork-shaped supporting members of the supporting means, thereby removing the receiving jig from the supporting member, and then removing the supporting member from the furnace. Since it is moved out of the chamber, the support of the receiving jig at the cradle of the crystal carry-out device and the subsequent extraction of the supporting member can be performed easily and smoothly, and the workability is good.
(6) Since the inner hole of the cradle of the crystal carry-out device is formed in accordance with the tapered shape of the outer peripheral surface of the receiving jig, the receiving jig can be stably placed, and the single hole from the furnace chamber can be placed. It is possible to reliably prevent the single crystal from falling over when the crystal is taken out.
[Brief description of the drawings]
FIG. 1 is a side view of a single crystal pulling apparatus according to an embodiment.
FIG. 2 is a plan view of the single crystal pulling apparatus according to the present embodiment.
FIG. 3 is a side view of the furnace chamber swung to a crystal take-out position.
FIG. 4 is a side view of a supporting means for a single crystal.
FIG. 5 is a plan view of a single crystal supporting means, and is a view taken along the line XX of FIG.
6 is a front view of a single crystal support means, and is a view taken along the line S-S in FIG. 4; FIG.
FIG. 7 is a detailed perspective view of single crystal supporting means.
FIG. 8 is a plan view of a receiving jig mounted on a support bar.
FIG. 9 is a partial cross-sectional view of a side surface of a receiving jig mounted on a support bar.
10 is a detailed view of the crystal carry-out device, and is a view taken along line YY in FIG.
FIG. 11 is a detailed view of the crystal carry-out device.
FIG. 12 is an explanatory diagram of operation.
FIG. 13 is a partial side sectional view of a conventional crystal pulling apparatus.
FIG. 14 is an operation explanatory diagram of a conventional crystal pulling apparatus.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Column, 2 ... Bracket, 3 ... Turning means, 3a ... Turning shaft, 3b ... Turning cylinder, 4 ... Turning motor, 5 ... Furnace chamber, 5a ... Support member, 5b ... Opening part, 5d ... Mounting surface, 5e ... Support hole, 6 ... Vacuum chamber, 6a ... Main chamber, 6b ... Top chamber, 6d ... Separation valve, 7 ... Elevating means, 7a ... Elevating member, 7b ... Hydraulic cylinder (elevating drive unit), 7c ... Rod (elevating unit) ), 8 ... single crystal, 11 ... base, 12 ... gantry, 14 ... rotating means, 15 ... pulling means, 17 ... rope, 18 ... positioning means, 19 ... door, 20 ... crystal unloading device, 22 ... base, 23: Receiving base, 24: Lifting table, 26: Ball screw, 27: Holding member, 28: Lifting motor, 29a, 29b ... Sprocket, 29c ... Chain, 30 ... Support means, 31 ... Support bar (support member), 31a ... 31b: Notch portion (fixing means), 32: Connection member, 33 ... Base, 34 ... Guide member, 35 ... Receiving jig, 35a ... Through hole, 35b ... Collar portion, 35d ... Notch surface, 35e ... Notch, 36 ... guide roller (moving means), 37 ... positioning member, A ... crystal pulling position, B ... crystal take-out position, P1 ... connection position, P2 ... turning position, P3 ... delivery position, FL ... floor surface.

Claims

A furnace chamber (5) for storing the single crystal (8) grown and pulled up in the vacuum chamber (6), and a rope (17) arranged on the furnace chamber (5) and suspended from the single crystal A semiconductor device comprising a pulling means (15) for winding up the furnace, and a turning means (3) for turning the furnace chamber (5) and the pulling means (15) between the crystal pulling position (A) and the crystal extracting position (B). In single crystal pulling equipment,
The furnace chamber (5) has an opening (5b) provided with an openable / closable door (19) on the lower side surface, and a connection position (P1) with the vacuum chamber (6) when the single crystal (8) is taken out. ) Can be lowered to a lower delivery position (P3), and
A receiving jig (35) for receiving and supporting the cone surface at the lower end of the single crystal (8) when taking out the single crystal (8);
A support member (31) attached to the side surface of the furnace chamber (5) and movable in the furnace chamber (5) from the opening (5b) with the receiving jig (35) placed thereon, Support means for carrying the receiving jig (35) into the furnace chamber (5) by the support member (31) and supporting the single crystal (8) via the receiving jig (35) when the single crystal (8) is taken out. (30),
A cradle that is placed under the furnace chamber (5) at the crystal take-out position (B) and lifts and places the receiving jig (35) that supports the single crystal (8) from below the support means (30) ( 23. A semiconductor single crystal pulling apparatus comprising: a crystal unloading device (20) that is provided so as to be movable up and down, and stores the single crystal (8) in a state of being placed on a receiving jig (35).

The semiconductor single crystal pulling apparatus according to claim 1,
The semiconductor single crystal pulling apparatus, wherein the receiving jig (35) has an inverted conical hole that matches the cone surface shape of the single crystal (8).

In the semiconductor single crystal pulling apparatus according to claim 1 or 2,
The semiconductor single crystal pulling apparatus, wherein the receiving jig (35) has a cutout portion (35e) extending from the outer peripheral surface to the center portion on one side surface portion.

In the semiconductor single crystal pulling apparatus according to claim 1, 2, or 3,
The support means (30)
The support member (31) has a fork shape,
On the upper part of the support member (31), a fixing means (31b) for fixing the receiving jig (35) so as not to move in the horizontal direction is provided,
1. A semiconductor single crystal pulling apparatus comprising a moving means (36) for allowing a receiving jig (35) placed on a support member (31) to move in a furnace chamber (5).

The furnace chamber (5) that houses the pulled single crystal (8) is swung from the crystal pulling position (A) to the crystal removal position (B) with the single crystal (8) suspended by the rope (17). In the single crystal extraction method of the semiconductor single crystal pulling apparatus for extracting the single crystal (8) from the furnace chamber (5),
After the pulling of the single crystal (8) is completed, the receiving jig (35) having a hole that matches the cone shape of the single crystal (8) is carried into the furnace chamber (5), and is placed in the receiving jig (35). A first step of placing the single crystal (8) and supporting the single crystal (8);
And a second step of removing the single crystal (8) from the furnace chamber (5) in a state where the single crystal (8) is received on the jig (35) at the crystal extraction position (B). .

The method for removing a single crystal according to claim 5,
Next to the first step, there is a step of rotating the furnace chamber (5) to the crystal extraction position (B) together with the single crystal (8) placed on the receiving jig (35). .

The method for removing a single crystal according to claim 5 or 6,
In the second step, the furnace chamber (5) is lowered together with the receiving jig (35) to a predetermined position in a state where the single crystal (8) is placed on the receiving jig (35) at the crystal take-out position (B). A method for taking out a single crystal, comprising the step of taking out the single crystal (8) together with the jig (35) from the furnace chamber (5).

The furnace chamber (5) that houses the pulled single crystal (8) is swung from the crystal pulling position (A) to the crystal removal position (B) with the single crystal (8) suspended by the rope (17). In the single crystal extraction method of the semiconductor single crystal pulling apparatus for extracting the single crystal (8) from the furnace chamber (5),
After the pulling of the single crystal (8) is completed, placing the single crystal (8) on a receiving jig (35) that receives and supports the cone surface of the single crystal (8) in the furnace chamber (5);
Next, the step of turning the furnace chamber (5) to the crystal extraction position (B) together with the single crystal (8) placed on the receiving jig (35),
Next, at the crystal take-out position (B), with the single crystal (8) placed on the receiving jig (35), the furnace chamber (5) is lowered together with the receiving jig (35) to a predetermined position, and the receiving jig Placing (35) on the cradle (23) of the crystal unloading device (20) and delivering the single crystal (8) to the cradle (23);
Next, the step of lowering the cradle (23), taking out the single crystal (8) placed on the receiving jig (35) from the furnace chamber (5), and storing it in the crystal unloading device (20). A method for taking out a single crystal characterized by the above.