JP4437438B2 - Semiconductor laser device and optical disk apparatus - Google Patents

Description

  The present invention relates to a semiconductor laser element and an optical disc apparatus.

  Semiconductor lasers are widely used as light sources for optical disk devices. When a semiconductor laser is used in an optical disk device, if noise is generated by reflected light from the optical disk surface, a signal reading error occurs. In order to prevent this, it has been studied to generate a self-excited oscillation operation by providing a saturable absorber in the semiconductor laser element.

  FIG. 4 is a configuration diagram of a conventional self-excited oscillation type semiconductor laser device disclosed in Patent Document 1. In FIG. 4 includes an n-type GaAs buffer layer 2, an n-type AlGaInP cladding layer 3, an n-type GaAs substrate 1 whose plane orientation of (100) plane is inclined at an angle of 10 degrees in the <011> direction. A multiple quantum well active layer 4 made of AlGaInP and GaInP, a first p-type AlGaInP clad layer 5, a saturable absorber layer 6 made of p-type GaInP 6, and a second p-type AlGaInP clad layer 7 are sequentially laminated.

  A striped ridge portion extending in the longitudinal direction of the resonator is formed on the upper surface of the second p-type AlGaInP cladding layer 7, and a contact layer 8 is formed on the ridge portion of the second p-type AlGaInP cladding layer 7. Is formed. An n-type GaAs current blocking layer 9 is formed on both sides of the second p-type AlGaInP cladding layer 7 and the contact layer 8. On the contact layer 8 and the current blocking layer 9, p-type GaAs is formed. A cap layer 10 is formed.

  A p-side electrode 11 is formed on the cap layer 10, and an n-side electrode 12 is formed on the back surface of the substrate 1.

  Here, the GaInP of the saturable absorbing layer 6 and the GaInP of the quantum well active layer 4 have the same composition, but the saturable absorbing layer 6 has an ordered structure and the quantum well active layer 4 has a disordered structure. The energy gap of the saturable absorber layer 6 is made 80 meV smaller than the energy gap of the quantum well active layer 4. Accordingly, the saturable absorption layer 6 efficiently absorbs laser light and saturates light absorption, so that stable self-excited oscillation can be obtained.

  FIG. 5 is a configuration diagram of a conventional self-oscillation semiconductor laser element disclosed in Patent Document 2. In FIG. The semiconductor laser device shown in FIG. 5 includes an n-type GaAs substrate 21 and a saturable absorption layer 26 comprising a GaAs buffer layer 22, an n-AlGaInP cladding layer 23, an active layer 24, a p-AlGaInP cladding layer 25, and a p-AlGaInP. A p-AlGaInP cladding layer 27, a p-GaInP heterobuffer layer 28, and a p-GaAs cap layer 29 are sequentially formed.

  Then, an n-GaAs current blocking layer 30 is formed in a portion where the p-AlGaInP cladding layer 28 and the p-GaInP heterobuffer layer 29 are partially removed, and the p-GaAs cap layer 29 and the n-GaAs current blocking layer 30 are formed. A p-GaAs cap layer 31 is formed on the top.

  A p-side electrode 32 is formed on the p-GaAs cap layer 31, and an n-side electrode 33 is formed on the back surface of the n-GaAs substrate 21.

Here, in addition to Zn (3 × 10 ¹⁸ cm ⁻³ ) which is a p-type impurity, the p-type saturable absorption layer 26 is doped with a small amount of oxygen (3 × 10 ¹⁷ cm ⁻³ ). . By this oxygen doping, non-radiative recombination centers are generated and minority carriers are consumed, so that the minority carrier lifetime is reduced, and thus self-oscillation is stably generated.
JP-A-9-283840 JP 9-331098 A

In the semiconductor laser device shown in FIG. 4, the saturable absorption layer 6 has an ordered structure, but the ^doping level is as high as 2 × 10 ¹⁸ cm ⁻³ . Therefore, when the ordered structure is disordered by the diffusion of doping atoms, and the disordering of the saturable absorption layer proceeds, the difference in band gap energy from the quantum well layer becomes smaller, and the self-oscillation operates stably. There is a problem of disappearing.

  Further, in the semiconductor laser element shown in FIG. 5, oxygen is doped to shorten the carrier life of the saturable absorbing layer 26. However, in a material containing active Al such as an AlGaInP-based material, piping is used. In addition, there is a possibility that the crystal quality of the AlGaInP layer other than the saturable absorbing layer may be deteriorated due to the influence of residual oxygen remaining in the chamber. In order to avoid this, it is conceivable to increase the Al composition of the AlGaInP saturable absorption layer 26. That is, when the Al composition of the AlGaInP saturable absorption layer 26 is increased, the doping efficiency of oxygen is increased, so that the carrier life can be reduced with a smaller oxygen supply amount. However, in order to obtain a band gap wavelength substantially equal to that of the active layer, it is necessary to increase the In composition of the saturable absorbing layer 26 to compressive strain, which causes a problem of increased strain.

  An object of the present invention is to provide a semiconductor laser element and an optical disk apparatus capable of controlling the band gap and carrier lifetime of a saturable absorbing layer and allowing stable self-oscillation to operate.

In order to achieve the above object, according to the first aspect of the present invention, a first conductivity type cladding layer, an active layer, and a second conductivity type cladding layer are sequentially laminated on a first conductivity type semiconductor substrate, A self-pulsation type semiconductor laser device in which a saturable absorption layer is formed on one or both of a first conductivity type cladding layer and a second conductivity type cladding layer,
AlGaInP is used for one or both of the active layer and the first conductivity type cladding layer and the second conductivity type cladding layer, and AlGaInNP is used for the saturable absorption layer,
Between one of the first conductivity type cladding layer and the second conductivity type cladding layer and the saturable absorption layer, or both the first conductivity type cladding layer and the second conductivity type cladding layer and the saturable absorption layer. An intermediate layer using GaInP is provided between and.

Further, a second aspect of the present invention is characterized in that the semiconductor laser device according to claim 1 Symbol placement is used.

According to the invention of claim 1 Symbol placement, a first conductivity type semiconductor substrate, a first conductivity type cladding layer, an active layer, a second conductivity type cladding layer are sequentially stacked, the first conductive clad A self-excited oscillation type semiconductor laser device in which a saturable absorption layer is formed on one or both of the layer and the second conductivity type cladding layer,
AlGaInP is used for one or both of the active layer and the first conductivity type cladding layer and the second conductivity type cladding layer, and AlGaInNP is used for the saturable absorption layer,
Between one of the first conductivity type cladding layer and the second conductivity type cladding layer and the saturable absorption layer, or both the first conductivity type cladding layer and the second conductivity type cladding layer and the saturable absorption layer. Since an intermediate layer using GaInP is provided between the two layers, nitrogen segregation at the interface between the cladding layer and the saturable absorbing layer is suppressed, and the surface flatness is improved.

Further, according to the second aspect of the present invention, by using a semiconductor laser device according to claim 1 Symbol placement, it is possible to realize an optical disc device with low noise characteristics.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a diagram showing a configuration example of a semiconductor laser device according to the present invention. Referring to FIG. 1, in this semiconductor laser device, a first conductivity type cladding layer 103, an active layer 50, and a second conductivity type cladding layer 105 are sequentially stacked on a first conductivity type semiconductor substrate 40. The saturable absorption layer 51 is formed on the second conductivity type cladding layer 105. The saturable absorbing layer 51 may be formed on the first conductivity type cladding layer 103 side instead of being formed on the second conductivity type cladding layer 105 side, or the first conductivity type cladding layer may be formed. It may be formed on both the layer 103 and the second conductivity type cladding layer 105.

  Here, the saturable absorbing layer 51 has a band gap substantially equal to or slightly smaller than the band gap of the active layer 50, and is doped with nitrogen at a high concentration.

In the present invention, as described above, since the saturable absorption layer 51 is doped with nitrogen at a high concentration, the self-excited oscillation can be stabilized. That is, although nitrogen is a group V element, it is known that nitrogen is strongly immiscible with As-based and P-based III-V group compound semiconductors. Therefore, when nitrogen is doped into an As-based or P-based III-V group compound semiconductor, non-radiative recombination centers are increased and the carrier lifetime is shortened. For example, in an InGaNAs-based material, the carrier lifetime decreases as the nitrogen composition increases, and the carrier lifetime becomes 1.5 nsec when the nitrogen concentration is 2 × 10 ¹⁸ cm ⁻³ . Therefore, when the saturable absorption layer 51 doped with nitrogen at a high concentration is used, the self-excited oscillation can be stabilized.

  Further, when the amount of nitrogen added to the saturable absorbing layer 51 is increased, a mixed crystal containing nitrogen in the group V element is formed. That is, in the semiconductor laser device of FIG. 1, the saturable absorbing layer 51 is a mixed crystal containing nitrogen as a group V element. A mixed crystal of nitrogen and an As-based or P-based III-group compound semiconductor has a large band gap bow with respect to the nitrogen composition. Therefore, in a mixed crystal having a small nitrogen composition, the band gap is smaller than that of a material containing nitrogen. Therefore, when a material obtained by adding nitrogen to the same material as the active layer is used as the material of the saturable absorption layer 51, the band gap of the saturable absorption layer 51 can be set smaller than the band gap of the active layer. The amount of band gap reduction can be strictly controlled by the nitrogen composition. Thereby, since the light absorptivity of the saturable absorption layer 51 is improved, the self-excited oscillation can be stabilized.

  In the semiconductor laser device of FIG. 1, the active layer 50, the cladding layers 103 and 105, and the saturable absorption layer 51 can be made of an AlGaInP-based material.

  By applying the structure of FIG. 1 to the AlGaInP system as described above (the active layer, the clad layer, and the saturable absorption layer are made of an AlGaInP material), an oscillation wavelength of 630 to 680 nm suitable for an optical disk such as a DVD is obtained. It is possible to provide a self-oscillation type semiconductor laser device having: Here, the saturable absorbing layer 51 contains nitrogen (N) like a GaInNP or AlGaInNP material, for example.

That is, since nitrogen (N) is strongly associated with Al, nitrogen is easily taken in when the Al composition of the saturable absorbing layer 51 is increased. As the Al composition is increased in AlGaInP, the band gap increases. Therefore, in order to make the Al composition of the saturable absorption layer 51 larger than the Al composition of the active layer and make the band gap of the saturable absorption layer 51 close to the band gap of the active layer, the In composition is increased and compressed. It needs to be distorted. For example, (Al _0.4 Ga _0.6 ) _1-a In _a P having almost the same band gap as the Ga _0.5 In _0.5 P active layer has an In composition a of 0.7. At this time, the amount of compressive strain becomes 1.5%. For this reason, the thickness of the saturable absorbing layer 51 cannot be increased, and light absorption becomes insufficient. On the other hand, since the band gap is reduced when nitrogen is added, for example, when the nitrogen composition is 0.5%, the In composition a is 0.6 and the band gap is almost the same. Therefore, the compressive strain can be reduced to 1%. Thus, it can be seen that when AlGaInNP is used for the saturable absorbing layer 51, the amount of compressive strain can be reduced with the same Al composition as compared with the case where AlGaInP is used. Therefore, the amount of strain can be suppressed and the nitrogen uptake efficiency of the saturable absorbing layer 51 can be improved.

  The efficiency of nitrogen incorporation into the AlGaInP layer varies greatly depending on crystal growth conditions. Therefore, by appropriately selecting the growth conditions, it is possible to suppress the influence of residual nitrogen incorporation on the AlGaInP layers other than the saturable absorbing layer 51.

  In the semiconductor laser device of FIG. 1, an AlGaInP intermediate layer 52 having an Al composition smaller than that of the cladding layer 105 and containing no nitrogen is further provided between the AlGaInP cladding layer 105 and the AlGaInNP saturable absorbing layer 51. It has been. Usually, the Al composition of the cladding layer is larger than the Al composition of the saturable absorption layer 51. Therefore, when no intermediate layer is provided, nitrogen is excessively taken in the vicinity of the interface between the cladding layer and the saturable absorbing layer 51. If the nitrogen composition exceeds several percent, the growth surface becomes cloudy, deteriorating device characteristics. On the other hand, when an AlGaInP intermediate layer 52 having an Al composition smaller than that of the cladding layer is inserted between the cladding layer and the saturable absorption layer 51, nitrogen segregation at the interface is suppressed, surface flatness is improved, and device characteristics are deteriorated. Will not occur.

  By using the semiconductor laser element as described above for an optical disc apparatus, an optical disc apparatus having low noise characteristics can be realized.

  Examples of the present invention will be described below.

FIG. 2 is a configuration diagram of the semiconductor laser device of the first embodiment. Referring to FIG. 2, the semiconductor laser device of Example 1 includes an n-type GaAs buffer layer 102, an n-type (Al _0.7 Ga _0.3 ) _0.5 In _0.5 P on an n-type GaAs substrate 101. Cladding layer 103, Ga _0.5 In _0.5 P active layer 104, p-type (Al _0.7 Ga _0.3 ) _0.5 In _0.5 P first cladding layer 105, p-type Ga _0.5 In _0.5 P intermediate layer 106, p-type Ga _0.5 In _0.5 NP saturable absorbing layer 107, p-type Ga _0.5 In _0.5 P intermediate layer 106, p-type (Al _0.7 Ga _{0. 3} ) A _0.5 In _0.5 P second cladding layer 108 and a p-type Ga _0.5 In _0.5 P contact layer 109 are sequentially stacked.

The p-type Ga _0.5 In _0.5 P contact layer 109 and the P-type AlGaInP second cladding layer 108 are dry-etched in a mesa stripe shape, and an n-type GaAs current confinement layer 110 is formed on the side surface of the mesa stripe. Is formed. A p-type GaAs cap layer 111 is formed on the p-type Ga _0.5 In _0.5 P contact layer 109 and the n-type GaAs current confinement layer 110.

  A p-side electrode 112 is formed on the p-type GaAs cap layer 111, and an n-side electrode 113 is formed on the back surface of the n-type GaAs substrate 101. In Example 1, as the n-type GaAs substrate, a substrate tilted at an angle of 15 degrees in the <011> direction from the (100) plane was used. Further, a low pressure MOCVD method was used as a crystal growth method.

In the p-type saturable absorption layer 107, Ga _0.5 In _0.5 P having the same composition as the active layer 104 is doped with nitrogen (N) at a concentration of 5 × 10 ¹⁹ cm ⁻³ . Here, as the raw material of Ga, using trimethyl gallium, as the material of In using trimethylaluminum as a raw material for P using PH _3. Nitrogen (N) doping was performed using dimethylhydrazine as a raw material. That is, the nitrogen concentration in the Ga _0.5 In _0.5 P film can be controlled by changing the supply amount of dimethylhydrazine. At the same time, Zn is doped at a concentration of 1 × 10 ¹⁸ cm ⁻³ to make the saturable absorbing layer 107 p-type.

By doping nitrogen (N), the band gap of GaInNP becomes smaller than before introducing nitrogen (N). Specifically, when nitrogen (N) is introduced into Ga _0.5 In _0.5 P at a concentration of 5 × 10 ¹⁹ cm ⁻³ , the band gap is larger than that before introducing nitrogen (N). Is reduced by about 40 meV. Thus, the reduction amount of the band gap can be easily controlled by the doping amount of nitrogen (N).

In addition, a quaternary mixed crystal of GaInNP is a material having strong immiscibility, and the crystallinity tends to decrease as the nitrogen concentration increases. Further, when crystal growth of Ga _0.5 In _0.5 NP is performed by a low pressure MOCVD method, the phosphorous pressure is reduced as compared with the case of normal AlGaInP growth in order to make it easy to incorporate nitrogen into the film. Therefore, the non-radiative recombination centers in the saturable absorption layer 107 are increased and the carrier lifetime is shortened.

As described above, by introducing nitrogen into the saturable absorbing layer 107, the band gap is reduced by about 40 meV and the carrier lifetime is shorter than that of the Ga _0.5 In _0.5 P active layer. As a result, light generated in the active layer 104 can be efficiently absorbed, and the self-excited oscillation can be stably operated.

In Example 1, p-type (Al _0.7 Ga _0.3 ) _0.5 In _0.5 P first clad layer 105 or second clad layer 108 and p-type Ga _0.5 In _{0.5 are used.} A p-type Ga _0.5 In _0.5 P intermediate layer 106 is provided with a thickness of 2 nm between the NP saturable absorption layer 107. Generally, the greater the Al composition, the higher the efficiency of nitrogen incorporation. Therefore, when the saturable absorption layer 107 is grown under the condition of doping Ga _0.5 In _0.5 P with nitrogen at a concentration of 5 × 10 ¹⁹ cm ⁻³ , when the intermediate layer 106 is not provided, At the initial stage of growth, excessive nitrogen is taken into the surface of the p-type (Al _0.7 Ga _0.3 ) _0.5 In _0.5 P clad layer and the growth surface becomes cloudy. On the other hand, in the semiconductor laser device shown in FIG. 2, the intermediate layer 106 has an Al composition smaller than that of the (Al _0.7 Ga _0.3 ) _0.5 In _0.5 P cladding layer and nitrogen. Since the Ga _0.5 In _0.5 P material not included is used, it is possible to suppress the segregation of nitrogen on the surface of the (Al _0.7 Ga _0.3 ) _0.5 In _0.5 P cladding layer.

FIG. 3 is a configuration diagram of the semiconductor laser device of the second embodiment. In the semiconductor laser device of FIG. 3, the active layer 201 has multiple layers in which Ga _0.5 In _0.5 P is a well layer and (Al _0.5 Ga _0.5 ) _0.5 In _0.5 P is a barrier layer. It differs from the semiconductor laser device shown in FIG. 2 in that it has a quantum well structure. In the semiconductor laser device of FIG. 3, the p-type saturable absorbing layer 203 has (Al _0.4 Ga _0.6 ) _0.4 In _0.6 NP as a well layer, and (Al _0.7 Ga _{0. 3} ) It differs from the semiconductor laser device shown in FIG. 2 in that it has a strained multiple quantum well structure with _0.5 In _0.5 P as a barrier layer.

In AlGaInP, the band gap increases as the Al composition increases. For this reason, in a saturable absorbing layer having an Al composition larger than that of the active layer, in order to obtain a band gap substantially equal to that of the active layer, it is necessary to increase the In composition to compressive strain. In the semiconductor laser device shown in FIG. 3, the In composition of the well layer of the saturable absorbing layer 203 is set to 0. 0 in order to make the band gap substantially equal to the Ga _0.5 In _0.5 P well layer of the active layer 201. 6 to increase the compression distortion. Further, since the well layer of the saturable absorbing layer 203 has a nitrogen composition of 0.5% as a group V element, the band gap is reduced by about 80 meV as compared with the case where nitrogen is not included. Therefore, the amount of compressive strain is suppressed to 1%.

Nitrogen has a strong property of binding to Al. Therefore, by increasing the Al composition of the well layer of the saturable absorption layer 203 to 0.4, nitrogen is introduced more efficiently than the Ga _0.5 In _0.5 P saturable absorption layer 107 shown in FIG. be able to.

In the (Al _0.4 Ga _0.6 ) _0.4 In _0.6 NP saturable absorption layer well layer having a nitrogen composition of 0.5%, the non-radiative recombination center is increased and the carrier lifetime is shortened. Since Al is included as a constituent element, not only nitrogen but also residual oxygen contained in the chamber and the raw material is taken into the film. Therefore, the carrier life is further shortened. As a result, light generated in the active layer can be efficiently absorbed, and the self-excited oscillation can be stably operated.

3, the p-type (Al _0.7 Ga _0.3 ) _0.5 In _0.5 P first cladding layer 105 or the second cladding layer 108, the p-type saturable absorption layer 203, The p-type (Al _0.4 Ga _0.6 ) _0.4 In _0.6 P intermediate layer 202 is provided with a thickness of 2 nm. This suppresses excessive incorporation of nitrogen into the interface with the p-type (Al _0.7 Ga _0.3 ) _0.5 In _0.5 P cladding layer.

In the above-described embodiments and examples, the case where the AlGaInP material system is used for the semiconductor laser element has been described. However, a self-pulsation type semiconductor laser using a III-V group compound semiconductor material such as an AlGaAs system or an InGaAsP system is used. The present invention can be similarly applied to elements. In the above-described embodiments and examples, the saturable absorption layer is provided in the p-type cladding layer. However, it is also possible to provide the saturable absorption layer in the n-type cladding layer. It is also possible to provide both on the mold cladding layer.

It is a figure which shows the structural example of the semiconductor laser element concerning this invention. 1 is a configuration diagram of a semiconductor laser element of Example 1. FIG. FIG. 6 is a configuration diagram of a semiconductor laser element of Example 2. It is a block diagram of the conventional semiconductor laser element. It is a block diagram of the conventional semiconductor laser element.

Explanation of symbols

40 Semiconductor substrate 50, 104, 201 Active layer 51, 107, 203 Saturable absorption layer 52, 106, 202 Intermediate layer 103 Clad layer of first conductivity type 105 Clad layer of second conductivity type 101 n-type GaAs substrate 102 n-type GaAs buffer layer 108 Second cladding layer 109 Contact layer 110 Current confinement layer 111 Cap layer 112 p-side electrode 113 n-side electrode

Claims (2)

A first conductivity type cladding layer, an active layer, and a second conductivity type cladding layer are sequentially stacked on the first conductivity type semiconductor substrate, and one of the first conductivity type cladding layer and the second conductivity type cladding layer, Or a self-pulsation type semiconductor laser element in which a saturable absorption layer is formed on both,
AlGaInP is used for one or both of the active layer and the first conductivity type cladding layer and the second conductivity type cladding layer, and AlGaInNP is used for the saturable absorption layer,
Between one of the first conductivity type cladding layer and the second conductivity type cladding layer and the saturable absorption layer, or both the first conductivity type cladding layer and the second conductivity type cladding layer and the saturable absorption layer. A semiconductor laser element characterized in that an intermediate layer using GaInP is provided between and. Optical disc apparatus characterized by semiconductor laser device according to claim 1 Symbol placement is used.

Images