JP4444920B2 - 露光装置及びデバイス製造方法 - Google Patents
露光装置及びデバイス製造方法 Download PDFInfo
- Publication number
- JP4444920B2 JP4444920B2 JP2005514126A JP2005514126A JP4444920B2 JP 4444920 B2 JP4444920 B2 JP 4444920B2 JP 2005514126 A JP2005514126 A JP 2005514126A JP 2005514126 A JP2005514126 A JP 2005514126A JP 4444920 B2 JP4444920 B2 JP 4444920B2
- Authority
- JP
- Japan
- Prior art keywords
- liquid
- recovery
- substrate
- supply
- port
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
本願は、2003年9月19日に出願された特願2003−328997号について優先権を主張し、その内容をここに援用する。
δ=±k2・λ/NA2 ・・・ (2)
ここで、λは露光波長、NAは投影光学系の開口数、k1、k2はプロセス係数である。(1)式、(2)式より、解像度Rを高めるために、露光波長λを短くして、開口数NAを大きくすると、焦点深度δが狭くなることが分かる。
図1は本実施形態に係る露光装置を示す概略構成図である。図1において、露光装置EXは、マスクMを支持するマスクステージMSTと、基板Pを支持する基板ステージPSTと、マスクステージMSTに支持されているマスクMを露光光ELで照明する照明光学系ILと、露光光ELで照明されたマスクMのパターン像を基板ステージPSTに支持されている基板Pに投影露光する投影光学系PLと、露光装置EX全体の動作を統括制御する制御装置CONTとを備えている。
本発明のデバイス製造方法は、上記の露光装置を用いるデバイス製造方法に関する。
Claims (12)
- 投影光学系と液体とを介してパターンの像を基板上に投影することによって前記基板を露光する露光装置であって、
前記パターンの像が投影される投影領域の近くに供給口を有し、前記基板の上方から前記供給口を通じて前記基板上に液体を供給する液体供給機構と;
前記供給口よりも前記投影領域から遠い位置に設けられた第1回収口と、前記第1回収口よりも前記投影領域から遠い位置に設けられた第2回収口とを有し、前記基板の上方から前記第1回収口および第2回収口を通じて前記基板上の液体を回収する液体回収機構と;
前記第1回収口の内部に配置された多孔部材と;
前記投影光学系と前記基板との間に形成される液浸領域の端部を検出する検出器と;
を備えている。 - 請求項1に記載した露光装置であって、
前記第2回収口は、前記投影領域に対して前記第1回収口の外側に配置されている。 - 請求項1に記載した露光装置であって、
前記第1回収口は、前記投影領域を囲むように配置されている。 - 請求項1に記載した露光装置であって、
前記供給口は、前記投影領域の両側に配置されている。 - 請求項1に記載した露光装置であって、
前記第2回収口は、前記投影領域を囲むように配置されている。 - 請求項1に記載した露光装置であって、
前記多孔質材は、スポンジ状の部材を含む。 - 請求項1に記載した露光装置であって、
前記第1回収口から液体だけが回収されるように、前記供給口からの液体供給量と前記第1回収口からの液体回収量の少なくともいずれか一方を制御する制御系を備える。 - 請求項7に記載した露光装置において、
前記制御系は、前記検出器の検出結果に基づいて、前記液体供給機構の液体供給量と前記液体回収機構の液体回収量の少なくともいずれか一方を制御する。 - 請求項7に記載した露光装置であって、
前記制御系は、前記液浸領域の端部が前記投影領域を含む所定範囲内に収まるように、前記検出器の検出結果に基づいて、前記液体供給機構の液体供給量と前記液体回収機構の液体回収量の少なくとも一方を制御する。 - 請求項7に記載した露光装置であって、
前記液体供給機構は、液体供給量を計測する第1計測器を有し、
前記制御系は、前記第1計測器の計測結果に基づいて、前記供給口からの液体供給量と前記第1回収口からの液体回収量の少なくともいずれか一方を制御する。 - 請求項7に記載した露光装置であって、
前記液体回収機構は、液体回収量を計測する第2計測器を有し、
前記制御系は、前記第2計測器の計測結果に基づいて、前記供給口からの液体供給量と前記第1回収口からの液体回収量の少なくともいずれか一方を制御する。 - 請求項1〜請求項11のいずれか一項記載の露光装置を用いるデバイス製造方法。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003328997 | 2003-09-19 | ||
| JP2003328997 | 2003-09-19 | ||
| PCT/JP2004/014000 WO2005029559A1 (ja) | 2003-09-19 | 2004-09-16 | 露光装置及びデバイス製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2005029559A1 JPWO2005029559A1 (ja) | 2006-11-30 |
| JP4444920B2 true JP4444920B2 (ja) | 2010-03-31 |
Family
ID=34372923
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005514126A Expired - Lifetime JP4444920B2 (ja) | 2003-09-19 | 2004-09-16 | 露光装置及びデバイス製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7924402B2 (ja) |
| JP (1) | JP4444920B2 (ja) |
| WO (1) | WO2005029559A1 (ja) |
Families Citing this family (136)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20170018113A (ko) | 2003-04-09 | 2017-02-15 | 가부시키가이샤 니콘 | 노광 방법 및 장치, 그리고 디바이스 제조 방법 |
| TW201834020A (zh) | 2003-10-28 | 2018-09-16 | 日商尼康股份有限公司 | 照明光學裝置、曝光裝置、曝光方法以及元件製造方法 |
| TW201809801A (zh) | 2003-11-20 | 2018-03-16 | 日商尼康股份有限公司 | 光學照明裝置、曝光裝置、曝光方法、以及元件製造方法 |
| JP4954444B2 (ja) * | 2003-12-26 | 2012-06-13 | 株式会社ニコン | 流路形成部材、露光装置及びデバイス製造方法 |
| EP3376523A1 (en) * | 2004-01-05 | 2018-09-19 | Nikon Corporation | Exposure apparatus, exposure method, and device producing method |
| CN1938646B (zh) * | 2004-01-20 | 2010-12-15 | 卡尔蔡司Smt股份公司 | 曝光装置和用于投影透镜的测量装置 |
| EP1713115B1 (en) | 2004-02-04 | 2016-05-04 | Nikon Corporation | Exposure apparatus, exposure method, and device producing method |
| TWI389174B (zh) | 2004-02-06 | 2013-03-11 | 尼康股份有限公司 | 偏光變換元件、光學照明裝置、曝光裝置以及曝光方法 |
| DE102004013886A1 (de) | 2004-03-16 | 2005-10-06 | Carl Zeiss Smt Ag | Verfahren zur Mehrfachbelichtung, Mikrolithografie-Projektionsbelichtungsanlage und Projektionssystem |
| US7898642B2 (en) * | 2004-04-14 | 2011-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US20070103661A1 (en) * | 2004-06-04 | 2007-05-10 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
| JP4517341B2 (ja) * | 2004-06-04 | 2010-08-04 | 株式会社ニコン | 露光装置、ノズル部材、及びデバイス製造方法 |
| CN1954408B (zh) * | 2004-06-04 | 2012-07-04 | 尼康股份有限公司 | 曝光装置、曝光方法及元件制造方法 |
| US20070222959A1 (en) * | 2004-06-10 | 2007-09-27 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
| KR20070026603A (ko) * | 2004-06-10 | 2007-03-08 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법, 및 디바이스 제조 방법 |
| US20070139628A1 (en) * | 2004-06-10 | 2007-06-21 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
| KR20180072867A (ko) | 2004-06-10 | 2018-06-29 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
| US8508713B2 (en) | 2004-06-10 | 2013-08-13 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
| US8373843B2 (en) | 2004-06-10 | 2013-02-12 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
| US8717533B2 (en) | 2004-06-10 | 2014-05-06 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
| JP4543767B2 (ja) * | 2004-06-10 | 2010-09-15 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| US7701550B2 (en) | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| KR101700547B1 (ko) | 2004-09-17 | 2017-01-26 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
| TWI436403B (zh) | 2004-10-26 | 2014-05-01 | 尼康股份有限公司 | A cleaning method, a substrate processing method, an exposure apparatus, and an element manufacturing method |
| JP4752473B2 (ja) | 2004-12-09 | 2011-08-17 | 株式会社ニコン | 露光装置、露光方法及びデバイス製造方法 |
| US8692973B2 (en) | 2005-01-31 | 2014-04-08 | Nikon Corporation | Exposure apparatus and method for producing device |
| WO2006080516A1 (ja) | 2005-01-31 | 2006-08-03 | Nikon Corporation | 露光装置及びデバイス製造方法 |
| US7324185B2 (en) | 2005-03-04 | 2008-01-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| TWI424260B (zh) | 2005-03-18 | 2014-01-21 | 尼康股份有限公司 | A board member, a substrate holding device, an exposure apparatus and an exposure method, and a device manufacturing method |
| WO2006101024A1 (ja) | 2005-03-18 | 2006-09-28 | Nikon Corporation | 露光方法及び露光装置、デバイス製造方法、並びに露光装置の評価方法 |
| US9239524B2 (en) | 2005-03-30 | 2016-01-19 | Nikon Corporation | Exposure condition determination method, exposure method, exposure apparatus, and device manufacturing method involving detection of the situation of a liquid immersion region |
| US20090226846A1 (en) * | 2005-03-30 | 2009-09-10 | Nikon Corporation | Exposure Apparatus, Exposure Method, and Device Manufacturing Method |
| US20070132976A1 (en) * | 2005-03-31 | 2007-06-14 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
| TW200644079A (en) * | 2005-03-31 | 2006-12-16 | Nikon Corp | Exposure apparatus, exposure method, and device production method |
| EP1873816A4 (en) | 2005-04-18 | 2010-11-24 | Nikon Corp | EXPOSURE DEVICE, EXPOSURE METHOD AND COMPONENTS MANUFACTURING METHOD |
| US8236467B2 (en) | 2005-04-28 | 2012-08-07 | Nikon Corporation | Exposure method, exposure apparatus, and device manufacturing method |
| US8248577B2 (en) | 2005-05-03 | 2012-08-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7317507B2 (en) * | 2005-05-03 | 2008-01-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP2660854B1 (en) | 2005-05-12 | 2017-06-21 | Nikon Corporation | Projection optical system, exposure apparatus and exposure method |
| US8179517B2 (en) | 2005-06-30 | 2012-05-15 | Nikon Corporation | Exposure apparatus and method, maintenance method for exposure apparatus, and device manufacturing method |
| JP4752374B2 (ja) * | 2005-07-27 | 2011-08-17 | 株式会社ニコン | 露光装置、液体保持方法、及びデバイス製造方法 |
| KR101449055B1 (ko) | 2005-08-23 | 2014-10-08 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법, 및 디바이스 제조 방법 |
| WO2007043535A1 (ja) * | 2005-10-07 | 2007-04-19 | Nikon Corporation | 光学特性計測方法、露光方法及びデバイス製造方法、並びに検査装置及び計測方法 |
| US7929109B2 (en) | 2005-10-20 | 2011-04-19 | Nikon Corporation | Apparatus and method for recovering liquid droplets in immersion lithography |
| US20070127002A1 (en) * | 2005-11-09 | 2007-06-07 | Nikon Corporation | Exposure apparatus and method, and device manufacturing method |
| JPWO2007055199A1 (ja) | 2005-11-09 | 2009-04-30 | 株式会社ニコン | 露光装置及び方法、並びにデバイス製造方法 |
| EP1962328B1 (en) * | 2005-11-14 | 2013-01-16 | Nikon Corporation | Exposure apparatus, exposure method, and device fabricating method |
| JP4514225B2 (ja) * | 2005-11-16 | 2010-07-28 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| JP2007165869A (ja) | 2005-11-21 | 2007-06-28 | Nikon Corp | 露光方法及びそれを用いたデバイス製造方法、露光装置、並びに基板処理方法及び装置 |
| US7803516B2 (en) | 2005-11-21 | 2010-09-28 | Nikon Corporation | Exposure method, device manufacturing method using the same, exposure apparatus, and substrate processing method and apparatus |
| KR20080071555A (ko) | 2005-12-06 | 2008-08-04 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법, 투영 광학계 및 디바이스 제조방법 |
| KR20080071552A (ko) | 2005-12-06 | 2008-08-04 | 가부시키가이샤 니콘 | 노광 방법, 노광 장치 및 디바이스 제조 방법 |
| US7782442B2 (en) | 2005-12-06 | 2010-08-24 | Nikon Corporation | Exposure apparatus, exposure method, projection optical system and device producing method |
| WO2007077875A1 (ja) | 2005-12-28 | 2007-07-12 | Nikon Corporation | 露光装置及び露光方法、並びにデバイス製造方法 |
| TWI457977B (zh) | 2005-12-28 | 2014-10-21 | 尼康股份有限公司 | A pattern forming method and a pattern forming apparatus, and an element manufacturing method |
| TWI409598B (zh) | 2005-12-28 | 2013-09-21 | 尼康股份有限公司 | Pattern forming method and pattern forming apparatus, exposure method and exposure apparatus, and component manufacturing method |
| US8953148B2 (en) | 2005-12-28 | 2015-02-10 | Nikon Corporation | Exposure apparatus and making method thereof |
| US8411271B2 (en) | 2005-12-28 | 2013-04-02 | Nikon Corporation | Pattern forming method, pattern forming apparatus, and device manufacturing method |
| KR101323565B1 (ko) | 2006-01-19 | 2013-10-29 | 가부시키가이샤 니콘 | 이동체 구동 방법 및 이동체 구동 시스템, 패턴 형성 방법및 패턴 형성 장치, 노광 방법 및 노광 장치, 그리고디바이스 제조 방법 |
| KR20080102192A (ko) | 2006-02-16 | 2008-11-24 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
| TW200801833A (en) | 2006-02-16 | 2008-01-01 | Nikon Corp | Exposure apparatus, exposure method and device manufacturing method |
| KR20080103564A (ko) | 2006-02-16 | 2008-11-27 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
| KR20080101865A (ko) | 2006-02-16 | 2008-11-21 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
| CN101980084B (zh) | 2006-02-21 | 2013-01-23 | 株式会社尼康 | 曝光装置、曝光方法及组件制造方法 |
| CN101385120B (zh) | 2006-02-21 | 2012-09-05 | 株式会社尼康 | 测定装置及方法、处理装置及方法、图案形成装置及方法、曝光装置及方法、以及元件制造方法 |
| EP3267258A1 (en) | 2006-02-21 | 2018-01-10 | Nikon Corporation | Exposure apparatus, exposure method and device manufacturing method |
| WO2007102484A1 (ja) | 2006-03-07 | 2007-09-13 | Nikon Corporation | デバイス製造方法、デバイス製造システム及び測定検査装置 |
| EP1995768A4 (en) | 2006-03-13 | 2013-02-06 | Nikon Corp | EXPOSURE DEVICE, MAINTENANCE METHOD, EXPOSURE METHOD AND DEVICE MANUFACTURING METHOD |
| US9477158B2 (en) * | 2006-04-14 | 2016-10-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| WO2007119821A1 (ja) * | 2006-04-14 | 2007-10-25 | Nikon Corporation | 露光方法及び露光装置、並びにデバイス製造方法 |
| DE102006021797A1 (de) | 2006-05-09 | 2007-11-15 | Carl Zeiss Smt Ag | Optische Abbildungseinrichtung mit thermischer Dämpfung |
| EP2037486A4 (en) | 2006-05-18 | 2012-01-11 | Nikon Corp | EXPOSURE METHOD AND DEVICE, MAINTENANCE METHOD AND COMPONENT MANUFACTURING METHOD |
| TW200818256A (en) * | 2006-05-22 | 2008-04-16 | Nikon Corp | Exposure method and apparatus, maintenance method, and device manufacturing method |
| EP2034515A4 (en) * | 2006-05-23 | 2012-01-18 | Nikon Corp | MAINTENANCE METHOD, EXPOSURE METHOD AND DEVICE AND COMPONENT MANUFACTURING METHOD |
| KR20090023545A (ko) | 2006-05-31 | 2009-03-05 | 가부시키가이샤 니콘 | 노광 장치 및 노광 방법 |
| JP2008034801A (ja) | 2006-06-30 | 2008-02-14 | Canon Inc | 露光装置およびデバイス製造方法 |
| WO2008001871A1 (en) | 2006-06-30 | 2008-01-03 | Nikon Corporation | Maintenance method, exposure method and apparatus and device manufacturing method |
| CN100541713C (zh) * | 2006-07-18 | 2009-09-16 | 东京毅力科创株式会社 | 高折射率液体循环系统、图案形成装置以及图案形成方法 |
| JP2008042004A (ja) * | 2006-08-08 | 2008-02-21 | Tokyo Electron Ltd | パターン形成方法およびパターン形成装置 |
| JP4772620B2 (ja) * | 2006-08-11 | 2011-09-14 | 東京エレクトロン株式会社 | 液浸露光用塗布膜の処理条件決定方法および処理条件決定装置 |
| US20080043211A1 (en) * | 2006-08-21 | 2008-02-21 | Nikon Corporation | Apparatus and methods for recovering fluid in immersion lithography |
| JP4813333B2 (ja) | 2006-11-21 | 2011-11-09 | 東京エレクトロン株式会社 | 膜形成方法、膜形成装置、パターン形成方法およびコンピュータ読取可能な記憶媒体 |
| JP5132920B2 (ja) * | 2006-11-22 | 2013-01-30 | 東京エレクトロン株式会社 | 塗布・現像装置および基板搬送方法、ならびにコンピュータプログラム |
| JP2008135583A (ja) | 2006-11-29 | 2008-06-12 | Tokyo Electron Ltd | 塗布膜形成装置および塗布膜形成方法 |
| JP4331199B2 (ja) | 2006-11-29 | 2009-09-16 | 東京エレクトロン株式会社 | 液浸露光用塗布膜形成装置および塗布膜形成方法 |
| JP4926678B2 (ja) * | 2006-12-04 | 2012-05-09 | 東京エレクトロン株式会社 | 液浸露光用洗浄装置および洗浄方法、ならびにコンピュータプログラムおよび記憶媒体 |
| JP2008153422A (ja) * | 2006-12-18 | 2008-07-03 | Tokyo Electron Ltd | 塗布・現像装置およびパターン形成方法 |
| JP2008153450A (ja) * | 2006-12-18 | 2008-07-03 | Tokyo Electron Ltd | 塗布膜処理方法および塗布膜処理装置 |
| US8004651B2 (en) * | 2007-01-23 | 2011-08-23 | Nikon Corporation | Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method |
| US8134685B2 (en) * | 2007-03-23 | 2012-03-13 | Nikon Corporation | Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method |
| KR20100014357A (ko) | 2007-04-12 | 2010-02-10 | 가부시키가이샤 니콘 | 계측 방법, 노광 방법 및 디바이스 제조 방법 |
| KR20100031694A (ko) | 2007-05-28 | 2010-03-24 | 가부시키가이샤 니콘 | 노광 장치, 디바이스 제조 방법, 세정 장치, 및 클리닝 방법 그리고 노광 방법 |
| US8164736B2 (en) * | 2007-05-29 | 2012-04-24 | Nikon Corporation | Exposure method, exposure apparatus, and method for producing device |
| US8098362B2 (en) | 2007-05-30 | 2012-01-17 | Nikon Corporation | Detection device, movable body apparatus, pattern formation apparatus and pattern formation method, exposure apparatus and exposure method, and device manufacturing method |
| JP5177449B2 (ja) | 2007-07-24 | 2013-04-03 | 株式会社ニコン | 移動体駆動方法及び移動体駆動システム、パターン形成方法及び装置、露光方法及び装置、並びにデバイス製造方法 |
| US8547527B2 (en) | 2007-07-24 | 2013-10-01 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and pattern formation apparatus, and device manufacturing method |
| US8194232B2 (en) | 2007-07-24 | 2012-06-05 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, position control method and position control system, and device manufacturing method |
| NL1035757A1 (nl) * | 2007-08-02 | 2009-02-03 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
| US8237919B2 (en) | 2007-08-24 | 2012-08-07 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method for continuous position measurement of movable body before and after switching between sensor heads |
| US8218129B2 (en) | 2007-08-24 | 2012-07-10 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, measuring method, and position measurement system |
| US20090051895A1 (en) * | 2007-08-24 | 2009-02-26 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, device manufacturing method, and processing system |
| US9304412B2 (en) | 2007-08-24 | 2016-04-05 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and measuring method |
| US8023106B2 (en) | 2007-08-24 | 2011-09-20 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method |
| US8867022B2 (en) | 2007-08-24 | 2014-10-21 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, and device manufacturing method |
| US8681308B2 (en) * | 2007-09-13 | 2014-03-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US8451427B2 (en) | 2007-09-14 | 2013-05-28 | Nikon Corporation | Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method |
| JP5267029B2 (ja) | 2007-10-12 | 2013-08-21 | 株式会社ニコン | 照明光学装置、露光装置及びデバイスの製造方法 |
| SG185313A1 (en) | 2007-10-16 | 2012-11-29 | Nikon Corp | Illumination optical system, exposure apparatus, and device manufacturing method |
| CN101681123B (zh) | 2007-10-16 | 2013-06-12 | 株式会社尼康 | 照明光学系统、曝光装置以及元件制造方法 |
| US8279399B2 (en) | 2007-10-22 | 2012-10-02 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
| US8379187B2 (en) | 2007-10-24 | 2013-02-19 | Nikon Corporation | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
| US9116346B2 (en) | 2007-11-06 | 2015-08-25 | Nikon Corporation | Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method |
| US9013681B2 (en) * | 2007-11-06 | 2015-04-21 | Nikon Corporation | Movable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method |
| US9256140B2 (en) | 2007-11-07 | 2016-02-09 | Nikon Corporation | Movable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method with measurement device to measure movable body in Z direction |
| WO2009060585A1 (ja) * | 2007-11-07 | 2009-05-14 | Nikon Corporation | 露光装置及び露光方法、並びにデバイス製造方法 |
| US8665455B2 (en) * | 2007-11-08 | 2014-03-04 | Nikon Corporation | Movable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method |
| US8422015B2 (en) | 2007-11-09 | 2013-04-16 | Nikon Corporation | Movable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method |
| US20090138273A1 (en) * | 2007-11-23 | 2009-05-28 | International Business Machines Corporation | Systems and methods for transforming a business process into reusable services |
| US8711327B2 (en) * | 2007-12-14 | 2014-04-29 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
| KR101477833B1 (ko) | 2007-12-28 | 2014-12-30 | 가부시키가이샤 니콘 | 노광 장치, 이동체 구동 시스템, 패턴 형성 장치 및 노광 방법, 그리고 디바이스 제조 방법 |
| US8421993B2 (en) * | 2008-05-08 | 2013-04-16 | Asml Netherlands B.V. | Fluid handling structure, lithographic apparatus and device manufacturing method |
| EP2131241B1 (en) | 2008-05-08 | 2019-07-31 | ASML Netherlands B.V. | Fluid handling structure, lithographic apparatus and device manufacturing method |
| EP2282188B1 (en) | 2008-05-28 | 2015-03-11 | Nikon Corporation | Illumination optical system and exposure apparatus |
| US8384875B2 (en) | 2008-09-29 | 2013-02-26 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
| US8619231B2 (en) | 2009-05-21 | 2013-12-31 | Nikon Corporation | Cleaning method, exposure method, and device manufacturing method |
| NL2005951A (en) * | 2010-02-02 | 2011-08-03 | Asml Netherlands Bv | Lithographic apparatus and a device manufacturing method. |
| EP2381310B1 (en) | 2010-04-22 | 2015-05-06 | ASML Netherlands BV | Fluid handling structure and lithographic apparatus |
| JP5131312B2 (ja) * | 2010-04-26 | 2013-01-30 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
| NL2009271A (en) | 2011-09-15 | 2013-03-18 | Asml Netherlands Bv | A fluid handling structure, a lithographic apparatus and a device manufacturing method. |
| NL2009472A (en) * | 2011-10-24 | 2013-04-25 | Asml Netherlands Bv | A fluid handling structure, a lithographic apparatus and a device manufacturing method. |
| CN111948912A (zh) | 2015-02-23 | 2020-11-17 | 株式会社尼康 | 基板处理系统及基板处理方法、以及组件制造方法 |
| KR102552792B1 (ko) | 2015-02-23 | 2023-07-06 | 가부시키가이샤 니콘 | 계측 장치, 리소그래피 시스템 및 노광 장치, 그리고 디바이스 제조 방법 |
| CN111176083B (zh) | 2015-02-23 | 2023-07-28 | 株式会社尼康 | 测量装置、光刻系统、曝光装置、测量方法以及曝光方法 |
| CN119414655A (zh) | 2016-08-24 | 2025-02-11 | 株式会社 尼康 | 基板处理系统、以及元件制造方法 |
| KR102625369B1 (ko) | 2016-09-30 | 2024-01-15 | 가부시키가이샤 니콘 | 계측 시스템 및 기판 처리 시스템, 그리고 디바이스 제조 방법 |
| JP2025532903A (ja) * | 2022-10-12 | 2025-10-03 | エーエスエムエル ネザーランズ ビー.ブイ. | 基板サポートクオリフィケーション |
Family Cites Families (159)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4346164A (en) * | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
| JPS57153433A (en) * | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
| JP2753930B2 (ja) * | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
| US5528118A (en) * | 1994-04-01 | 1996-06-18 | Nikon Precision, Inc. | Guideless stage with isolated reaction stage |
| US5874820A (en) * | 1995-04-04 | 1999-02-23 | Nikon Corporation | Window frame-guided stage mechanism |
| US5623853A (en) * | 1994-10-19 | 1997-04-29 | Nikon Precision Inc. | Precision motion stage with single guide beam and follower stage |
| JPH08316124A (ja) * | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
| US6297871B1 (en) * | 1995-09-12 | 2001-10-02 | Nikon Corporation | Exposure apparatus |
| US5825043A (en) * | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
| SG102627A1 (en) * | 1996-11-28 | 2004-03-26 | Nikon Corp | Lithographic device |
| WO1998028665A1 (en) * | 1996-12-24 | 1998-07-02 | Koninklijke Philips Electronics N.V. | Two-dimensionally balanced positioning device with two object holders, and lithographic device provided with such a positioning device |
| WO1999049504A1 (fr) | 1998-03-26 | 1999-09-30 | Nikon Corporation | Procede et systeme d'exposition par projection |
| US6995930B2 (en) * | 1999-12-29 | 2006-02-07 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
| US7187503B2 (en) | 1999-12-29 | 2007-03-06 | Carl Zeiss Smt Ag | Refractive projection objective for immersion lithography |
| KR100866818B1 (ko) * | 2000-12-11 | 2008-11-04 | 가부시키가이샤 니콘 | 투영광학계 및 이 투영광학계를 구비한 노광장치 |
| WO2002091078A1 (en) | 2001-05-07 | 2002-11-14 | Massachusetts Institute Of Technology | Methods and apparatus employing an index matching medium |
| US7092069B2 (en) * | 2002-03-08 | 2006-08-15 | Carl Zeiss Smt Ag | Projection exposure method and projection exposure system |
| DE10229818A1 (de) * | 2002-06-28 | 2004-01-15 | Carl Zeiss Smt Ag | Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem |
| DE10210899A1 (de) | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
| JP4117530B2 (ja) * | 2002-04-04 | 2008-07-16 | セイコーエプソン株式会社 | 液量判定装置、露光装置、および液量判定方法 |
| JP2005536775A (ja) | 2002-08-23 | 2005-12-02 | 株式会社ニコン | 投影光学系、フォトリソグラフィ方法および露光装置、並びに露光装置を用いた方法 |
| US7093375B2 (en) * | 2002-09-30 | 2006-08-22 | Lam Research Corporation | Apparatus and method for utilizing a meniscus in substrate processing |
| US7367345B1 (en) | 2002-09-30 | 2008-05-06 | Lam Research Corporation | Apparatus and method for providing a confined liquid for immersion lithography |
| US6988326B2 (en) * | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Phobic barrier meniscus separation and containment |
| US7383843B2 (en) * | 2002-09-30 | 2008-06-10 | Lam Research Corporation | Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer |
| US6954993B1 (en) * | 2002-09-30 | 2005-10-18 | Lam Research Corporation | Concentric proximity processing head |
| US6788477B2 (en) * | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
| DE60335595D1 (de) * | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
| SG121822A1 (en) * | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| CN101382738B (zh) * | 2002-11-12 | 2011-01-12 | Asml荷兰有限公司 | 光刻投射装置 |
| KR100585476B1 (ko) * | 2002-11-12 | 2006-06-07 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치 및 디바이스 제조방법 |
| US7110081B2 (en) * | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| SG121819A1 (en) * | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| DE10253679A1 (de) * | 2002-11-18 | 2004-06-03 | Infineon Technologies Ag | Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren |
| SG131766A1 (en) * | 2002-11-18 | 2007-05-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| DE10258718A1 (de) * | 2002-12-09 | 2004-06-24 | Carl Zeiss Smt Ag | Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives |
| EP1571695A4 (en) * | 2002-12-10 | 2008-10-15 | Nikon Corp | EXPOSURE DEVICE AND METHOD FOR PRODUCING THE DEVICE |
| EP1429190B1 (en) * | 2002-12-10 | 2012-05-09 | Canon Kabushiki Kaisha | Exposure apparatus and method |
| JP4595320B2 (ja) * | 2002-12-10 | 2010-12-08 | 株式会社ニコン | 露光装置、及びデバイス製造方法 |
| AU2003289271A1 (en) | 2002-12-10 | 2004-06-30 | Nikon Corporation | Exposure apparatus, exposure method and method for manufacturing device |
| CN101872135B (zh) * | 2002-12-10 | 2013-07-31 | 株式会社尼康 | 曝光设备和器件制造法 |
| JP4352874B2 (ja) * | 2002-12-10 | 2009-10-28 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| ATE424026T1 (de) | 2002-12-13 | 2009-03-15 | Koninkl Philips Electronics Nv | Flüssigkeitsentfernung in einem verfahren und einer einrichtung zum bestrahlen von flecken auf einer schicht |
| USRE48515E1 (en) | 2002-12-19 | 2021-04-13 | Asml Netherlands B.V. | Method and device for irradiating spots on a layer |
| US7010958B2 (en) * | 2002-12-19 | 2006-03-14 | Asml Holding N.V. | High-resolution gas gauge proximity sensor |
| EP1732075A3 (en) | 2002-12-19 | 2007-02-21 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
| US6781670B2 (en) * | 2002-12-30 | 2004-08-24 | Intel Corporation | Immersion lithography |
| US7090964B2 (en) * | 2003-02-21 | 2006-08-15 | Asml Holding N.V. | Lithographic printing with polarized light |
| JP4604452B2 (ja) * | 2003-02-26 | 2011-01-05 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
| EP2466621B1 (en) | 2003-02-26 | 2015-04-01 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
| US7206059B2 (en) | 2003-02-27 | 2007-04-17 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
| US6943941B2 (en) * | 2003-02-27 | 2005-09-13 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
| US7029832B2 (en) * | 2003-03-11 | 2006-04-18 | Samsung Electronics Co., Ltd. | Immersion lithography methods using carbon dioxide |
| US20050164522A1 (en) | 2003-03-24 | 2005-07-28 | Kunz Roderick R. | Optical fluids, and systems and methods of making and using the same |
| WO2004093159A2 (en) | 2003-04-09 | 2004-10-28 | Nikon Corporation | Immersion lithography fluid control system |
| JP4656057B2 (ja) | 2003-04-10 | 2011-03-23 | 株式会社ニコン | 液浸リソグラフィ装置用電気浸透素子 |
| WO2004090634A2 (en) | 2003-04-10 | 2004-10-21 | Nikon Corporation | Environmental system including vaccum scavange for an immersion lithography apparatus |
| KR101177330B1 (ko) | 2003-04-10 | 2012-08-30 | 가부시키가이샤 니콘 | 액침 리소그래피 장치 |
| EP2921905B1 (en) | 2003-04-10 | 2017-12-27 | Nikon Corporation | Run-off path to collect liquid for an immersion lithography apparatus |
| KR101159564B1 (ko) | 2003-04-11 | 2012-06-25 | 가부시키가이샤 니콘 | 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침액체를 유지하는 장치 및 방법 |
| WO2004092830A2 (en) | 2003-04-11 | 2004-10-28 | Nikon Corporation | Liquid jet and recovery system for immersion lithography |
| KR20170016014A (ko) | 2003-04-11 | 2017-02-10 | 가부시키가이샤 니콘 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| ATE542167T1 (de) | 2003-04-17 | 2012-02-15 | Nikon Corp | Lithographisches immersionsgerät |
| JP4146755B2 (ja) | 2003-05-09 | 2008-09-10 | 松下電器産業株式会社 | パターン形成方法 |
| JP4025683B2 (ja) * | 2003-05-09 | 2007-12-26 | 松下電器産業株式会社 | パターン形成方法及び露光装置 |
| TWI295414B (en) * | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| CN1307456C (zh) | 2003-05-23 | 2007-03-28 | 佳能株式会社 | 投影光学系统、曝光装置及器件的制造方法 |
| JP2004349645A (ja) * | 2003-05-26 | 2004-12-09 | Sony Corp | 液浸差動排液静圧浮上パッド、原盤露光装置および液侵差動排液による露光方法 |
| TWI347741B (en) * | 2003-05-30 | 2011-08-21 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP2261742A3 (en) * | 2003-06-11 | 2011-05-25 | ASML Netherlands BV | Lithographic apparatus and device manufacturing method. |
| JP4054285B2 (ja) | 2003-06-12 | 2008-02-27 | 松下電器産業株式会社 | パターン形成方法 |
| JP4084710B2 (ja) | 2003-06-12 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
| US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
| JP4029064B2 (ja) | 2003-06-23 | 2008-01-09 | 松下電器産業株式会社 | パターン形成方法 |
| JP4084712B2 (ja) | 2003-06-23 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
| JP2005019616A (ja) * | 2003-06-25 | 2005-01-20 | Canon Inc | 液浸式露光装置 |
| JP4343597B2 (ja) * | 2003-06-25 | 2009-10-14 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| EP1491956B1 (en) * | 2003-06-27 | 2006-09-06 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US6809794B1 (en) | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
| EP1498778A1 (en) * | 2003-06-27 | 2005-01-19 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP3862678B2 (ja) * | 2003-06-27 | 2006-12-27 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| EP1494074A1 (en) * | 2003-06-30 | 2005-01-05 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| WO2005006026A2 (en) | 2003-07-01 | 2005-01-20 | Nikon Corporation | Using isotopically specified fluids as optical elements |
| SG109000A1 (en) * | 2003-07-16 | 2005-02-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| US7384149B2 (en) | 2003-07-21 | 2008-06-10 | Asml Netherlands B.V. | Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system |
| EP1500982A1 (en) * | 2003-07-24 | 2005-01-26 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7006209B2 (en) | 2003-07-25 | 2006-02-28 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
| US7326522B2 (en) * | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
| EP1503244A1 (en) * | 2003-07-28 | 2005-02-02 | ASML Netherlands B.V. | Lithographic projection apparatus and device manufacturing method |
| US7175968B2 (en) * | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
| US7779781B2 (en) * | 2003-07-31 | 2010-08-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7145643B2 (en) * | 2003-08-07 | 2006-12-05 | Asml Netherlands B.V. | Interface unit, lithographic projection apparatus comprising such an interface unit and a device manufacturing method |
| US7061578B2 (en) | 2003-08-11 | 2006-06-13 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
| US7700267B2 (en) * | 2003-08-11 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion fluid for immersion lithography, and method of performing immersion lithography |
| US7579135B2 (en) * | 2003-08-11 | 2009-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography apparatus for manufacture of integrated circuits |
| US7085075B2 (en) * | 2003-08-12 | 2006-08-01 | Carl Zeiss Smt Ag | Projection objectives including a plurality of mirrors with lenses ahead of mirror M3 |
| US6844206B1 (en) | 2003-08-21 | 2005-01-18 | Advanced Micro Devices, Llp | Refractive index system monitor and control for immersion lithography |
| US6954256B2 (en) * | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
| TWI263859B (en) * | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| TWI245163B (en) * | 2003-08-29 | 2005-12-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| US7070915B2 (en) | 2003-08-29 | 2006-07-04 | Tokyo Electron Limited | Method and system for drying a substrate |
| US7014966B2 (en) * | 2003-09-02 | 2006-03-21 | Advanced Micro Devices, Inc. | Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems |
| KR101523180B1 (ko) | 2003-09-03 | 2015-05-26 | 가부시키가이샤 니콘 | 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법 |
| JP4378136B2 (ja) * | 2003-09-04 | 2009-12-02 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| JP3870182B2 (ja) * | 2003-09-09 | 2007-01-17 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| US6961186B2 (en) * | 2003-09-26 | 2005-11-01 | Takumi Technology Corp. | Contact printing using a magnified mask image |
| US7369217B2 (en) | 2003-10-03 | 2008-05-06 | Micronic Laser Systems Ab | Method and device for immersion lithography |
| US7678527B2 (en) * | 2003-10-16 | 2010-03-16 | Intel Corporation | Methods and compositions for providing photoresist with improved properties for contacting liquids |
| WO2005050324A2 (en) | 2003-11-05 | 2005-06-02 | Dsm Ip Assets B.V. | A method and apparatus for producing microchips |
| US7924397B2 (en) * | 2003-11-06 | 2011-04-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-corrosion layer on objective lens for liquid immersion lithography applications |
| US7545481B2 (en) * | 2003-11-24 | 2009-06-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US8854602B2 (en) | 2003-11-24 | 2014-10-07 | Asml Netherlands B.V. | Holding device for an optical element in an objective |
| US7125652B2 (en) * | 2003-12-03 | 2006-10-24 | Advanced Micro Devices, Inc. | Immersion lithographic process using a conforming immersion medium |
| JP5106858B2 (ja) | 2003-12-15 | 2012-12-26 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 高開口数と平面状端面とを有する投影対物レンズ |
| JP2007516613A (ja) | 2003-12-15 | 2007-06-21 | カール・ツアイス・エスエムテイ・アーゲー | 少なくとも1つの液体レンズを備えるマイクロリソグラフィー投影対物レンズとしての対物レンズ |
| US7460206B2 (en) * | 2003-12-19 | 2008-12-02 | Carl Zeiss Smt Ag | Projection objective for immersion lithography |
| WO2005059645A2 (en) | 2003-12-19 | 2005-06-30 | Carl Zeiss Smt Ag | Microlithography projection objective with crystal elements |
| US20050185269A1 (en) * | 2003-12-19 | 2005-08-25 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
| US7589818B2 (en) * | 2003-12-23 | 2009-09-15 | Asml Netherlands B.V. | Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus |
| US7394521B2 (en) | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7119884B2 (en) | 2003-12-24 | 2006-10-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US20050147920A1 (en) * | 2003-12-30 | 2005-07-07 | Chia-Hui Lin | Method and system for immersion lithography |
| US7088422B2 (en) * | 2003-12-31 | 2006-08-08 | International Business Machines Corporation | Moving lens for immersion optical lithography |
| JP4371822B2 (ja) * | 2004-01-06 | 2009-11-25 | キヤノン株式会社 | 露光装置 |
| JP4429023B2 (ja) * | 2004-01-07 | 2010-03-10 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| US20050153424A1 (en) * | 2004-01-08 | 2005-07-14 | Derek Coon | Fluid barrier with transparent areas for immersion lithography |
| KR101407204B1 (ko) | 2004-01-14 | 2014-06-13 | 칼 짜이스 에스엠티 게엠베하 | 투영 대물렌즈 |
| CN101793993B (zh) | 2004-01-16 | 2013-04-03 | 卡尔蔡司Smt有限责任公司 | 光学元件、光学布置及系统 |
| WO2005069078A1 (en) | 2004-01-19 | 2005-07-28 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus with immersion projection lens |
| CN1938646B (zh) | 2004-01-20 | 2010-12-15 | 卡尔蔡司Smt股份公司 | 曝光装置和用于投影透镜的测量装置 |
| US7026259B2 (en) * | 2004-01-21 | 2006-04-11 | International Business Machines Corporation | Liquid-filled balloons for immersion lithography |
| US7391501B2 (en) * | 2004-01-22 | 2008-06-24 | Intel Corporation | Immersion liquids with siloxane polymer for immersion lithography |
| EP1713114B1 (en) * | 2004-02-03 | 2018-09-19 | Nikon Corporation | Exposure apparatus and device manufacturing method |
| JP2007520893A (ja) | 2004-02-03 | 2007-07-26 | ロチェスター インスティテュート オブ テクノロジー | 流体を使用したフォトリソグラフィ法及びそのシステム |
| US7050146B2 (en) * | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| WO2005076084A1 (en) | 2004-02-09 | 2005-08-18 | Carl Zeiss Smt Ag | Projection objective for a microlithographic projection exposure apparatus |
| WO2005081067A1 (en) | 2004-02-13 | 2005-09-01 | Carl Zeiss Smt Ag | Projection objective for a microlithographic projection exposure apparatus |
| WO2005081030A1 (en) | 2004-02-18 | 2005-09-01 | Corning Incorporated | Catadioptric imaging system for high numerical aperture imaging with deep ultraviolet light |
| JP2005242080A (ja) * | 2004-02-27 | 2005-09-08 | Victor Co Of Japan Ltd | ワイヤグリッドポラライザ |
| US20050205108A1 (en) * | 2004-03-16 | 2005-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for immersion lithography lens cleaning |
| US7027125B2 (en) * | 2004-03-25 | 2006-04-11 | International Business Machines Corporation | System and apparatus for photolithography |
| US7084960B2 (en) * | 2004-03-29 | 2006-08-01 | Intel Corporation | Lithography using controlled polarization |
| US7034917B2 (en) * | 2004-04-01 | 2006-04-25 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufactured thereby |
| US7227619B2 (en) * | 2004-04-01 | 2007-06-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7295283B2 (en) * | 2004-04-02 | 2007-11-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| WO2005098504A1 (en) | 2004-04-08 | 2005-10-20 | Carl Zeiss Smt Ag | Imaging system with mirror group |
| US7898642B2 (en) * | 2004-04-14 | 2011-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7271878B2 (en) * | 2004-04-22 | 2007-09-18 | International Business Machines Corporation | Wafer cell for immersion lithography |
| US7244665B2 (en) | 2004-04-29 | 2007-07-17 | Micron Technology, Inc. | Wafer edge ring structures and methods of formation |
| US7379159B2 (en) | 2004-05-03 | 2008-05-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1747499A2 (en) | 2004-05-04 | 2007-01-31 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
| US20060244938A1 (en) | 2004-05-04 | 2006-11-02 | Karl-Heinz Schuster | Microlitographic projection exposure apparatus and immersion liquid therefore |
| US7091502B2 (en) | 2004-05-12 | 2006-08-15 | Taiwan Semiconductor Manufacturing, Co., Ltd. | Apparatus and method for immersion lithography |
| KR101376931B1 (ko) | 2004-05-17 | 2014-03-25 | 칼 짜이스 에스엠티 게엠베하 | 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈 |
| US7616383B2 (en) | 2004-05-18 | 2009-11-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7486381B2 (en) | 2004-05-21 | 2009-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1774405B1 (en) | 2004-06-04 | 2014-08-06 | Carl Zeiss SMT GmbH | System for measuring the image quality of an optical imaging system |
| KR101248328B1 (ko) | 2004-06-04 | 2013-04-01 | 칼 짜이스 에스엠티 게엠베하 | 강도 변동이 보상된 투사 시스템 및 이를 위한 보상 요소 |
-
2004
- 2004-09-16 WO PCT/JP2004/014000 patent/WO2005029559A1/ja not_active Ceased
- 2004-09-16 JP JP2005514126A patent/JP4444920B2/ja not_active Expired - Lifetime
-
2006
- 2006-03-15 US US11/374,953 patent/US7924402B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US7924402B2 (en) | 2011-04-12 |
| US20060231206A1 (en) | 2006-10-19 |
| WO2005029559A1 (ja) | 2005-03-31 |
| JPWO2005029559A1 (ja) | 2006-11-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4444920B2 (ja) | 露光装置及びデバイス製造方法 | |
| JP6466894B2 (ja) | 露光方法、及びデバイス製造方法 | |
| JP6319410B2 (ja) | 露光装置及びデバイス製造方法 | |
| JP6187614B2 (ja) | 露光装置、露光方法及びデバイス製造方法 | |
| JP4954444B2 (ja) | 流路形成部材、露光装置及びデバイス製造方法 | |
| JP2010093300A (ja) | 流路形成部材、露光装置及びデバイス製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070914 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20091006 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20091127 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100105 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100114 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 4444920 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130122 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130122 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140122 Year of fee payment: 4 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313117 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term |