JP4455953B2 - Electrodeposition mechanism of resist film and method of manufacturing crystal resonator using the same - Google Patents

Description

  The present invention relates to an electrodeposition mechanism for a resist film and a method for manufacturing a crystal resonator, and more particularly to an electrodeposition mechanism for forming a resist film on a crystal wafer having an uneven surface formed as a crystal resonator.

BACKGROUND OF THE INVENTION A crystal resonator is known as a frequency control element, and is incorporated in various electronic devices including a communication device incorporated in an oscillator, for example. In recent years, for example, due to the high frequency of communication equipment (600 MHz or the like), it is necessary to reduce the thickness of the crystal resonator.

(Example of Prior Art) FIG. 3 (ab) is a diagram for explaining one conventional example of a crystal resonator. FIG. 3 (a) is a sectional view of the crystal resonator (crystal piece), and FIG. It is a top view of a wafer.

  The crystal resonator is made of, for example, an AT-cut crystal piece 1 and includes a vibrating portion 1a having a small thickness and an outer peripheral portion 1b having a larger thickness. And it has the excitation electrode 2 (ab) which opposes both the main surfaces of the vibration part 1a, and the extraction electrode 3 (ab) is extended to the outer peripheral part 1b of both ends. Thereby, since the outer peripheral part 1b can be hold | maintained, the thickness of the vibration part 1a can be made small and a vibration frequency can be made high. It should be noted that the outer peripheral portion 1b of the extraction electrode 3 (ab) is held and hermetically sealed by a mechanism (not shown).

  Normally, a large number of recesses are formed in the crystal wafer 4 by wet etching or the like "FIG. 1 (b)". Next, an electrode material made of Au (gold) whose base is Cr (chrome) is provided on the entire surface of the crystal wafer 4 by vapor deposition or sputtering. Next, a resist film as a mask (not shown) for forming the excitation and extraction electrodes 2 and 3 is formed by electrodeposition. Since the quartz wafer 4 has a concavo-convex surface, electrodeposition is adopted because it is difficult to form a resist film by a normal resist solution 9 application method for a flat plate.

  For the resist film (electrodeposition resist film) by electrodeposition, for example, a crystal wafer 4 having a positive potential is put upright in an ionized resist solution 9 (not shown), and electrode plates having a negative potential are provided on both main surfaces. Electrically formed. Thereby, the resist film can be formed without interruption particularly at the corners of the uneven surface (see Patent Document 1).

Next, unnecessary portions of the resist film are removed by exposure (photo etching), and the resist film is left only on the excitation and extraction electrodes 2 and 3. Thereby, only unnecessary electrode materials are exposed. Next, unnecessary portions of the electrode material are removed by wet etching, and the electrode material to be the excitation and extraction electrodes 2 and 3 and the resist film thereon are left. Finally, the resist film on the excitation and extraction electrodes 2 and 3 is removed. Then, it is divided into individual crystal pieces 1.
JP 2004-72676 A

(Problems of the prior art) However, the electrodeposition mechanism for forming a resist film on the crystal wafer 4 having the concavo-convex surface having the above configuration has the following problems. That is, when the electrodeposition resist film on the electrode material (excitation and extraction electrodes 2 and 3) is removed after the electrode pattern is formed, residues such as spots and scorching due to electrical coupling are generated. In addition, there is a problem that air or the like in the ionized resist solution 9 is generated as bubbles in the resist film, causing defects such as holes in the resist film.

  From this, it was considered to form an electrodeposition resist film by a spray resist method. The electrodeposition mechanism by the spray resist method is composed of a resist container, a discharge nozzle 5 and an electrode needle 6 (not shown) as shown in FIG. The resist container accommodates, for example, a positive resist solution 9. The discharge nozzle 5 communicates (connects) to the resist container via a hose, and sprays the resist solution 9 in a mist form. The electrode needle 6 is connected to the holder 6a, and is provided, for example, at the tip of the discharge nozzle 5 as a negative potential. Then, for example, a resist solution 9 is sprayed from the tip of the discharge nozzle 5 onto the crystal wafer 4 held on the stage 7 having a positive potential (arrow indicated by a solid line in FIG. 4).

  However, in this case, the variation tends to be large with the particle diameter of resist particles (registration error) sprayed from the discharge nozzle 5. This makes it difficult to control the thickness of the resist film. If there is a difference in the thickness of the resist film, problems such as disconnection of the electrode pattern and resist residue occur during photoetching.

  The resist particles from the discharge nozzle 5 are ionized by the electrode needle 6 and reach the main surface of the crystal wafer 4. However, in this case, an ion wind is generated, and the resist fine particles are sprayed in an oblique direction from directly below the discharge nozzle 5 (arrows indicated by dotted lines in FIG. 4). For this reason, the reach distance to the quartz wafer 4 is different, and the resist particles radiated directly below the short reach distance adhere to the quartz wafer 4 as usual in a wet state.

  However, the resist particles radiated in an oblique direction with a long reach distance adhere to the crystal wafer 4 in a dry state (powder state). Therefore, the crystal wafer 4 has a problem that a resist film having unevenness in the moisture state and the dry state and having a non-uniform thickness is formed.

(Object of the Invention) The present invention provides a resist film electrodeposition mechanism by a spray resist method capable of forming an electrodeposition resist with high accuracy by reducing resist particles to a uniform film thickness, and a method of manufacturing a quartz crystal resonator using the resist film electrodeposition mechanism. The purpose is to provide.

  As shown in the claims of the present invention (Claim 1), a resist container containing a resist solution, a discharge nozzle for spraying the resist solution in a mist form, and the resist solution at the tip of the discharge nozzle In an electrodeposition mechanism including an electrode needle to be charged, an atomizing spray nozzle that supplies a pressurized gas to the resist container and sucks and sprays the resist solution is provided, and the resist sprayed from the atomizing spray nozzle A configuration in which a resist particle having a large weight among the particles is dropped into the resist solution, and a resist particle having a small weight among the resist particles is discharged from an outlet provided above the resist container and communicated with the discharge nozzle. And

  According to the second aspect of the present invention, an electrodeposition provided with a resist container that contains a resist solution, a discharge nozzle that sprays the resist solution in a mist, and an electrode needle that charges the resist solution at the tip of the discharge nozzle. In the mechanism, a plurality of electrode needles are arranged at equal intervals on the outer periphery of the discharge nozzle.

  According to the third aspect of the present invention, an electrodeposition provided with a resist container for storing a resist solution, a discharge nozzle for spraying the resist solution in a mist, and an electrode needle for charging the resist solution at a tip of the discharge nozzle. In the mechanism, an atomizing spray nozzle that sucks and sprays the resist film by supplying a pressurized gas to the resist container is provided, and the fine particle component sprayed from the atomizing spray nozzle flows out of the resist container, A plurality of electrode needles are arranged at regular intervals from the outer periphery to the tip of the discharge nozzle.

  According to the first aspect of the present invention, since the resist solution in the resist container is sprayed by the atomizing spray nozzle, the resist particles having a small weight fall and the resist particles having a large weight are disposed on the upper outlet. Discharged from. Therefore, only the fine particles of the resist particles can be extracted and sprayed from the discharge nozzle. Thereby, an electrodeposition resist film having a uniform thickness can be obtained.

  According to the configuration of the second aspect, since a plurality of electrode needles provided at the tip of the discharge nozzle are arranged at equal intervals on the outer periphery of the discharge nozzle, the resist particles from the discharge nozzle are sprayed directly downward. That is, when there is a single electrode needle, an ion wind in a direction away from the electrode needle is generated to deflect the resist particles. On the other hand, when a plurality of electrode needles are arranged uniformly, the ion wind from each electrode needle is balanced to prevent deflection, and the resist particles fall in the direct downward direction. Accordingly, the resist particles are evenly attached in a moisture state to make the film thickness uniform and facilitate film thickness control.

  In the case of the structure of claim 3, since it is combined with the structure of claims 1 and 2, it is possible to extract and eject only fine particles of resist particles, and to form an electrodeposition resist film having a uniform film thickness without unevenness. can get. For these reasons, the electrodeposition resist film can be formed with high accuracy.

  According to the fourth aspect of the present invention, after the resist film is formed on the entire surface of the crystal wafer having the concavo-convex surface by the resist film electrodeposition mechanism according to the first, second or third aspect, the vibration region having a small thickness is formed. A method for manufacturing a crystal resonator in which an excitation electrode and an extraction electrode extending from the excitation electrode are formed on an outer peripheral portion having a large thickness and divided into individual crystal pieces. This facilitates the manufacture of a crystal resonator particularly for a high frequency having a vibration region with a small thickness and a peripheral portion with a large thickness.

  FIGS. 1 and 2 are schematic configuration diagrams of a resist film electrodeposition mechanism for explaining an embodiment of the present invention. FIG. 1 is a resist container of the electrodeposition mechanism, and FIG. 2 (a) is an electrode needle. The front view and the same figure (b) of the discharge nozzle containing are the same top views. In addition, the same number is attached | subjected to the same part as a prior art example, and the description is simplified or abbreviate | omitted.

  The electrodeposition mechanism applies the above-described spray resist method and includes a resist container 8, a discharge nozzle 5, and an electrode needle 6. The resist container 8 includes a cylindrical container body 8a and a lid 8b that seals the opening surface. A resist solution 9 is accommodated in the container body 8a. The lid 8b is provided with an atomizing spray nozzle 10 and an outlet 11.

  The atomizing spray nozzle 10 sprays the resist solution 9 sucked up from the suction pipe 13 in the form of a mist (particulate) into the resist container 8 with a pressurized gas of N 2 (nitrogen) from the injection pipe 12. These are operated by a switch mechanism using an air cylinder (not shown) provided in the atomizing spray nozzle 10. The atomizing spray nozzle 10 is, for example, a model name 10537-1J manufactured by Spraying System Japan.

  The discharge nozzle 5 is provided in communication with a pipe 14 provided at the outlet 11 of the lid 8b. The discharge nozzle 5 and the pipe 14 are connected by a flexible hose 15. The electrode needles 6 are composed of a plurality of, for example, three, and are arranged evenly on the outer periphery of the tip of the discharge nozzle 5 (FIG. 2 (ab)). + Charge is applied (see FIG. 4).

  In such an electrodeposition mechanism, the suction pipe sucks up the resist solution 9 in the resist container 8 by the switch mechanism. Then, the resist solution 9 is sprayed into the resist container 8 in the form of a mist by the pressurized gas from the injection tube 12. Thereby, the particles of the resist solution 9 are scattered in the resist container 8, and the heavy resist particles 15a fall into the resist solution 9 on the bottom surface. On the other hand, the resist particles 15b having a small weight rise by the pressurized gas and are discharged from the outlet 11 of the lid body 8b located above. In other words, the resist particles 15 a having a large particle size fall into the liquid, and only the resist particles 15 b having a small particle size are discharged from the outlet 11.

  Then, the resist particles 15 b having a small particle diameter are supplied to the discharge nozzle 5 communicating with the outlet 11. Then, it is charged with a positive potential by the three electrode needles 6 and sprayed (discharged) onto the crystal wafer 4 on the uneven surface on the stage 7 (-potential). In this case, the three electrode needles 6 are arranged at regular intervals on the outer periphery of the tip of the discharge nozzle 5. Therefore, the resist particles are prevented from being deflected by the ion wind from the electrode needles 6 and discharged in the downward direction.

  Therefore, with such a configuration, only the resist particles 15b having a small particle diameter are discharged from the resist container 8 and supplied to the discharge nozzle 5. Therefore, the surface of the crystal wafer 4 has a uniform thickness with little variation. A resist film can be formed. In addition, since the three electrode needles 6 prevent the resist particles 15b having a small particle size from being deflected and discharged in the downward direction, the reaching distance to the crystal wafer 4 is shortened to prevent drying, and the moisture state is not uniform. Ensure adhesion at. From these things, a highly accurate electrodeposition resist film can be formed.

(Other matters) In the above embodiment, the pressurized gas is N2, but it may be any inert gas such as Ar, and basically any pressurized gas can be applied. Further, although the object on which the resist film is formed is the crystal wafer 4 having unevenness, it can be applied to a flat plate or other materials.

  Moreover, although the number of electrode needles 6 is three, two or four or more may be sufficient, and also it is good also as the cyclic | annular form to circulate. The resist particles may be charged by using at least the tip surface of the discharge nozzle 5 as a metal. Even in this case, since the discharged resist particles are charged from the outer periphery, it is presumed that the ion wind is balanced to prevent deflection.

  Further, although the outlet 11 is provided in the lid 8b, it may be the container body 8a as long as it is located above the interface of the resist solution 9. Although the extraction of the resist particles 15b having a small particle diameter and the prevention of deflection by the ionic wind have been described in the same embodiment, each effect can be obtained even if they are performed separately, and the present invention does not exclude them.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a partial cross-sectional view of a schematic configuration of a resist film electrodeposition mechanism for explaining an embodiment of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS It is a figure of the discharge nozzle containing the electrode needle | hook explaining one Example of this invention, The figure (a) is a front view, The figure (b) is a top view. It is a figure explaining a prior art example, the figure (a) is a sectional view of a crystal piece, and the figure (b) is a top view of a crystal wafer. It is a schematic block diagram explaining the electrodeposition resist explaining a prior art example.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 Crystal oscillator (crystal piece) 2 Excitation electrode 3 Extraction electrode 4 Crystal wafer 5 Discharge nozzle 6 Electrode needle 7 Stage 8 Resist container 9 Resist liquid 10 Atomizing spray nozzle 11 Outlet 12 injection pipe, 13 pipe, 14 hose, 15a resist particle having a large particle diameter, 15b resist particle having a small particle diameter.

Claims (4)

  An electrodeposition mechanism comprising: a resist container that contains a resist liquid; a discharge nozzle that sprays the resist liquid in a mist; and an electrode needle that charges the resist liquid at a tip of the discharge nozzle; An atomizing spray nozzle that sucks and sprays the resist solution while supplying a pressurized gas is provided, and the resist particles having a large weight among the resist particles sprayed from the atomizing spray nozzle are dropped into the resist solution, A resist film electrodeposition mechanism, wherein resist particles having a small weight among resist particles are discharged from an outlet provided above the resist container and communicated with the discharge nozzle.   In an electrodeposition mechanism comprising: a resist container that contains a resist solution; a discharge nozzle that sprays the resist solution in the form of a mist; and an electrode needle that charges the resist solution at the tip of the discharge nozzle. A resist film electrodeposition mechanism characterized in that the resist film is arranged at regular intervals on the outer periphery of the discharge nozzle as a book.   An electrodeposition mechanism comprising: a resist container that contains a resist liquid; a discharge nozzle that sprays the resist liquid in a mist; and an electrode needle that charges the resist liquid at a tip of the discharge nozzle; An atomizing spray nozzle that sucks and sprays the resist film by supplying a pressure gas is provided, and the fine particle component sprayed from the atomizing spray nozzle flows out of the resist container, and the electrode needles are discharged as a plurality of electrode needles. A resist film electrodeposition mechanism, characterized in that the resist film is disposed from the outer periphery to the tip of the nozzle at equal intervals.   4. A resist film is formed on the entire surface of a crystal wafer having a concavo-convex surface by the resist film electrodeposition mechanism according to claim 1, and an excitation electrode is provided in a vibration region having a small thickness and the excitation is provided on a thick outer peripheral portion. A method of manufacturing a crystal resonator, wherein an extraction electrode extending from an electrode is formed and divided into individual crystal pieces.

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