JP4461968B2 - Semiconductor light emitting device - Google Patents

Description

  The present invention relates to a semiconductor light emitting device including a semiconductor light emitting element mounted on an insulating substrate and a resin package covering the semiconductor light emitting element.

  With the miniaturization of electrical equipment, semiconductor light-emitting devices used as light sources for various display devices are required to be further reduced in size and thickness. In recent years, semiconductor light-emitting elements are mounted on an insulating substrate. Surface mount type semiconductor light emitting devices are often used.

  FIG. 4A is a plan sectional view of a conventional semiconductor light emitting device. As shown in FIG. 4A, a conventional semiconductor light emitting device 70 includes an insulating substrate 71, semiconductor light emitting elements 72 and 73 mounted on the insulating substrate 71, and translucent covering the semiconductor light emitting elements 72 and 73. Resin package 74.

  The insulating substrate 71 includes terminal portions 75 to 78 formed on both sides and wiring portions 79 to 82 formed in the middle portion on the upper surface. Terminal portions 75 to 78 and wiring portions 79 to 82 are connected to each other through connecting portions 83 to 86.

  A substantially rectangular resin resist layer 87 is formed on the upper surfaces of the connection portions 83 and 84 arranged on one side of the insulating substrate 71, and similarly, the upper surfaces of the connection portions 85 and 86 arranged on the other side are also similar. A resin resist layer 88 is formed.

  The terminal portions 75 to 78 and the wiring portions 79 to 82 are formed by the resin resist layers 87 and 88 so that the surfaces are separated.

  Both side ends of the resin package 74 are arranged so as to substantially coincide with the inner side (substrate center side) ends of the terminal portions 75 to 78, and the inner ends of the resin resist layers 87 and 88 are slightly inside the both side ends of the resin package 74. Is arranged.

  The terminal portions 75 to 78 of the insulating substrate 71 are formed in a cross-sectional groove shape extending to both side end surfaces and the back surface. The semiconductor light emitting device 70 is mounted by reflow or the like on a large substrate for manufacturing other electronic devices at the customer site. At this time, the back surfaces and side end surfaces of the terminal portions 75 to 78 are conductively connected to the large substrate by soldering.

  At this time, the solder may run on the surface, but since the resin resist layers 87 and 88 are provided, the solder does not enter the wiring portions 79 to 82.

For example, Patent Document 1 discloses a semiconductor light emitting device in which a resin resist layer is provided on the surface of an insulating substrate 71, although the purpose is different.
JP-A-8-330637 (page 2-4, FIG. 1)

  However, with the miniaturization of the semiconductor light emitting device, the conductive pattern such as the wiring portion and the terminal portion and the pattern of the resin resist layer are miniaturized, and the relative position is likely to shift.

  FIG. 4B is a plan sectional view showing a state in which the pattern of the resin resist layer of the conventional semiconductor light emitting device is shifted. As shown in FIG. 4B, for example, when the resin resist layers 87 and 88 are shifted to the terminal portions 75 and 76 on one side of the insulating substrate 71, the surfaces of the terminal portions 75 and 76 and the wiring portions 79 and 80 are obtained. Is connected, and the solder that has run on the surfaces of the terminal portions 75 and 76 enters the wiring portions 79 and 80, and the resin package 74 and the wiring portion 79 formed to cover the wiring portions 79 and 80 are peeled off, thereby When the solder reaches the wire bonding area such as the portion 79, there is a problem that stress is applied to the wire bonding portion to cause disconnection.

  Here, the semiconductor light emitting device described in Patent Document 1 covers the entire outer end (bonding line) of the resin package with a resin resist layer. In this case, the following problem occurs.

  In general, such a semiconductor light emitting device is formed by cutting a rod-shaped member formed on a collective substrate. However, in the configuration of the semiconductor light emitting device described in Patent Document 1, a resin resist layer is laid on a sealing line. Therefore, in consideration of variations in resist formation, there is a problem that a range necessary for wiring layout such as a die bond area and a wire bond area becomes small.

  In order to meet the demand for multicolored semiconductor light-emitting devices, it is necessary to mount multiple elements, and there is also a demand for miniaturization of parts. Since there is a limit, in order to secure this area, it is preferable that the area of the resin resist layer disposed in the mold is small.

  Accordingly, an object of the present invention is to provide a semiconductor light emitting device that prevents solder from entering a resin package in a state where the area of a resist layer is reduced.

  In the semiconductor light emitting device of the present invention, notches are respectively formed at positions adjacent to the connecting portion between the terminal portion and the wiring portion of the insulating substrate.

  According to the present invention, it is possible to obtain a semiconductor light emitting device that prevents the solder from entering the resin package while reducing the area of the resist layer.

  According to the present invention, since the notch portions are formed at positions adjacent to the connection portions of the terminal portions, even if the position of the resin resist layer is shifted, the notch portions are formed between the terminal portions and the wiring portions. A gap is formed so that solder does not enter the wiring portion, and cracking of the resin package can be prevented.

  In addition, when two semiconductor light emitting elements are provided and the terminal portion and the wiring portion are connected in an L shape, the number of notches is only one for each connecting portion, and the shape of the conduction pattern is simplified. Yield can be improved.

  In the first invention of the present application, a pair of terminal portions are formed on both sides of the surface of the insulating substrate, and a pair of wiring portions formed in an intermediate portion of the surface are connected to both the terminal portions via connection portions. A semiconductor light emitting device in which each of the wiring portions is connected to a semiconductor light emitting element, a resin package portion covering each of the wiring portions and the semiconductor light emitting element is formed, and a resin resist layer covering each of the connection portions is formed. In the apparatus, a notch portion is formed at a position adjacent to the connection portion of the terminal portion, and even if the position of the resin resist layer is shifted, the terminal portion and the wiring portion Since a gap due to the notch is formed between them, the solder does not enter the wiring part.

  According to a second invention of the present application, two semiconductor light emitting elements are provided, the terminal part, the wiring part, and the connection part are provided in pairs, and the terminal part and the wiring part are connected in an L shape. Since the terminal portion and the wiring portion are connected in an L shape, the number of notches is only one for each connecting portion, and the shape of the conductive pattern Can be easy.

  Hereinafter, embodiments of the present invention will be described with reference to FIGS. 1 to 3.

(First embodiment)
FIG. 1A is a plan sectional view of the semiconductor light emitting device according to the first embodiment of the present invention, and FIG. 1B is a plan sectional view of the semiconductor light emitting device in which the pattern of the resin resist layer is shifted. FIG. 2 is a perspective view of the semiconductor light emitting device according to the first embodiment of the present invention.

  As shown in FIGS. 1 and 2, the semiconductor light emitting device 1 according to the first embodiment includes a rectangular insulating substrate 2 and rectangular semiconductor light emitting elements 3 and 4 mounted on an intermediate portion of the insulating substrate 2. And a rectangular resin package part 5 that covers the semiconductor light emitting elements 3 and 4.

  Terminal portions 6 and 7 are formed on one side of the surface of the insulating substrate 2, and terminal portions 8 and 9 are formed on the other side. Inner ends (substrate center side) ends of the terminal portions 6 to 9 are arranged so as to substantially coincide with both side ends of the resin package 5. Moreover, the terminal parts 6-9 are each formed in the cross-sectional groove shape extended to a both-ends end surface and a back surface.

  Two pairs of wiring portions 10 and 11 are formed in the intermediate portion of the insulating substrate 2. The wiring parts 10 and 11 are respectively element mounting parts 13 and 14 bonded to the bottom surfaces of the semiconductor light emitting elements 3 and 4 via the conductive paste 12, and wire connections connected to the semiconductor light emitting elements 3 and 4 by wire bonding. Parts 15 and 16.

  The element mounting portions 13 and 14 and the wire connecting portions 15 and 16 are connected in an L shape to the end portions of the terminal portions 6 and 7 that are close to each other and the end portions of the terminal portions 8 and 9 that are close to each other. ing.

  Of the connecting portions between the terminal portions 6 to 9 and the wiring portions 10 and 11, straight portions (portions indicated by two-dot chain lines in FIG. 1) overlapping the outer ends of the resin package portion 5 are connected portions 17 to It is set to 20.

  The semiconductor light emitting element 3 is an element having an n electrode and a p electrode on the upper surface, and the wire connection portion 15 and the n electrode are connected by a wire 27. Further, a wire 29 having one end connected to the p-electrode is connected to an intermediate position of a portion communicating with the connection portion 17 of the element mounting portion 13.

  The semiconductor light emitting element 4 is an element having an n electrode on the lower surface and a p electrode on the upper surface, and the wire connecting portion 16 and the p electrode are connected by a wire 30.

  Cutout portions 21 to 24 are formed at positions adjacent to the connection portions 17 to 20 of the terminal portions 6 to 9, respectively. The notches 21 to 24 are formed in the same shape.

  The notches 21 and 22 and the connecting portions 17 and 18 are covered with a substantially rectangular resin resist layer 25 having rounded corners at two outer sides. In addition, the notches 23 and 24 and the connecting portions 19 and 20 are also covered with a substantially rectangular resin resist layer 26 in which two corners on the outside are rounded.

  The notches 23 and 24 are formed in a trapezoidal shape with rounded corners.

  The shortest distance b in the X direction of the notches 23 and 24 and the distance T in the Y direction between the outer end in the Y direction and the inner ends of the terminal portions 8 and 9 are within a range in which the terminal portions 8 and 9 are not cut. Is set.

  The width B in the X direction of the resin resist layer 26 is greater than or equal to the sum of the maximum relative displacement width s1 in the X direction with respect to the conductive pattern when the resin resist layer 26 is printed and the shortest distance b between the notches 23 and 24. It is set to be.

  The distance t in the Y direction from the inner end of the resin resist layer 26 to the bottom sides of the notches 23 and 24 is set to be equal to or larger than the distance T in the Y direction of the notches 23 and 24. T is set to be larger than the maximum relative deviation width s2 in the Y direction with respect to the conductive pattern when the resin resist layer 26 is printed.

  It should be noted that the displacement width when printing the resin resist layer 26 is considered to be the same in both the X direction and the Y direction, and may be set as s1 = s2.

  With this configuration, if the displacement width s1 in the X direction of the resin resist layer 26 is ± (B−b) / 2, and the displacement width s2 in the Y direction is within the range of −t, the wire mounting portion 15 16 are not connected to the main body of the terminal portions 8 and 9, and solder can be prevented from entering the wire mounting portions 15 and 16. If the dimensions of the notches 21 and 22 in the Y direction are set in the same manner as the notches 23 and 24, the allowable deviation range in the Y direction of the resin resist layers 25 and 26 is ± t.

  As shown in FIG. 1B, the notch portions 21 and 22 are formed even when the resin resist layers 25 and 26 are shifted to the + side in the Y direction and the connection portions 17 and 18 are exposed. Therefore, the surfaces of the terminal portions 6 and 7 and the body portions of the element mounting portions 13 and 14 do not communicate with each other, and solder can be prevented from entering the element mounting portions 13 and 14 from the terminal portions 6 and 7. .

(Second Embodiment)
FIG. 3 is a plan view of the semiconductor light emitting device according to the second embodiment. As shown in FIG. 3, the semiconductor light emitting device 32 of the second embodiment is configured to use only one semiconductor light emitting element.

  The semiconductor light emitting device 32 according to the second embodiment is formed by mounting the semiconductor light emitting element 4 on the insulating substrate 2 and covering the semiconductor light emitting element 4 with a resin package portion 33.

  The insulating substrate 2 is formed with a pair of substantially rectangular terminal portions 34 and 35 on both sides, and a wiring portion 36 in the middle portion. The wiring part 36 includes an element mounting part 37 and a wire connection part 38, and the element mounting part 37 and the wire connection part 38 are connected to terminal parts 34 and 35 via connection parts 39 and 40, respectively. Two cutout portions 41 to 44 are formed on both sides of the connection portions 39 and 40, respectively. The cutout portions 41 to 44 and the connection portions 39 and 40 are respectively formed by substantially rectangular resin resist layers 45 and 46. Covered.

  Thus, even when the number of semiconductor light emitting elements is one, by providing the notch portion, it is possible to prevent solder from entering the resin package portion.

A reliability test was performed using the semiconductor light emitting device 1 of the first embodiment.
(Preprocessing)
Moisture absorption is performed for 2 hours at a temperature of 65 ° C. and a humidity of 95%, and solder penetration is confirmed by appearance inspection three times.
(Actual measurement)
The sample was passed through a reflow tank set at a temperature of 270 ° C., and an HOT check was performed four times for visual inspection regarding solder penetration and confirmation of complete disconnection and half disconnection.
(result)
A test was conducted using 526 semiconductor light emitting devices, but none of the solders penetrated.

  In the present invention, when mounting on a large substrate by reflow or the like, the solder does not enter the wiring portion, and cracking of the resin package can be prevented, so that the semiconductor light emitting device mounted on the insulating substrate and the It is suitable for a semiconductor light emitting device provided with a resin package to be covered.

(A) is a cross-sectional plan view of the semiconductor light emitting device according to the first embodiment of the present invention, and (B) is a cross-sectional plan view of the semiconductor light emitting device in a state where the pattern of the resin resist layer is shifted. The perspective view of the semiconductor light-emitting device of the 1st Embodiment of this invention Plan view of the semiconductor light emitting device of the second embodiment (A) is a cross-sectional plan view of a conventional semiconductor light emitting device, and (B) is a cross-sectional plan view of the conventional semiconductor light emitting device with the resin resist layer pattern shifted.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor light-emitting device 2 Insulating substrate 3, 4 Semiconductor light-emitting element 5 Resin package part 6, 7 Terminal part 8, 9 Terminal part 10, 11 Wiring part 12 Conductive paste 13, 14 Element mounting part 15, 16 Wire connection part 17 -20 connection portion 21-24 notch portion 25, 26 resin resist layer 27 wire 29 wire 30 wire 32 semiconductor light emitting device 33 resin package portion 34, 35 terminal portion 36 wiring portion 37 element mounting portion 38 wire connection portion 39, 40 connection Part 41 to 44 Notch part 45, 46 Resin resist layer

Claims (1)

A pair of terminal portions are formed on both sides of the surface of the insulating substrate, and a pair of wiring portions formed in the middle portion of the surface are respectively connected to both the terminal portions via connection portions, and each of the wirings In each of the semiconductor light emitting devices, each part is connected to a semiconductor light emitting element, a resin package part covering each wiring part and the semiconductor light emitting element is formed, and a resin resist layer covering each connection part is formed.
Notch portions are respectively formed at positions adjacent to the connection portions of the terminal portions and in both side surface directions perpendicular to both sides where the terminal portions of the insulating substrate are formed ,
The width of the resin resist layer in the direction of the two vertical sides is set to be equal to or greater than the sum of the maximum relative deviation width with respect to the conductive pattern when the resin resist layer is printed and the shortest distance between the notches. And
The distance from the inner edge of the resin resist layer to the bottom of the notch is set to be equal to or greater than the distance to the bottom of the notch, and the distance to the bottom of the notch is the distance from the resin resist layer. A semiconductor light emitting device, wherein the semiconductor light emitting device is set to be larger than a maximum relative deviation width with respect to a conductive pattern when printing .

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