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JP4463543B2 - Substrate holding device, substrate holding method, and substrate processing apparatus - Google Patents
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JP4463543B2 - Substrate holding device, substrate holding method, and substrate processing apparatus - Google Patents

Substrate holding device, substrate holding method, and substrate processing apparatus Download PDF

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JP4463543B2
JP4463543B2 JP2003432480A JP2003432480A JP4463543B2 JP 4463543 B2 JP4463543 B2 JP 4463543B2 JP 2003432480 A JP2003432480 A JP 2003432480A JP 2003432480 A JP2003432480 A JP 2003432480A JP 4463543 B2 JP4463543 B2 JP 4463543B2
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substrate
suction
pressing portion
pressing
holding device
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JP2005191368A (en
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雅彦 関本
誠司 勝岡
直樹 大
輝行 渡邉
貴弘 小川
憲一 鈴木
賢一 小林
靖之 本島
亮 加藤
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Ebara Corp
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Ebara Corp
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Priority to JP2003432480A priority Critical patent/JP4463543B2/en
Priority to EP04808032A priority patent/EP1697967A1/en
Priority to US10/578,100 priority patent/US7886685B2/en
Priority to PCT/JP2004/019681 priority patent/WO2005064642A1/en
Priority to TW093140194A priority patent/TWI368671B/en
Publication of JP2005191368A publication Critical patent/JP2005191368A/en
Priority to KR1020067012728A priority patent/KR101076820B1/en
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Publication of JP4463543B2 publication Critical patent/JP4463543B2/en
Priority to US12/983,474 priority patent/US8141513B2/en
Priority to US13/398,216 priority patent/US8777198B2/en
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Description

本発明は、基板の表面(被処理面)をめっき液やその他の処理液によって処理する際に用いて好適な基板保持装置及び基板保持方法、並びにこの基板保持装置を用いて構成される基板処理装置に関する。   The present invention relates to a substrate holding device and a substrate holding method that are suitable for use when a surface (surface to be processed) of a substrate is processed with a plating solution or other processing solution, and a substrate processing configured using the substrate holding device. Relates to the device.

半導体基板の配線形成プロセスとして、配線溝及びコンタクトホールに金属(導電体)を埋込むようにしたプロセス(いわゆる、ダマシンプロセス)が使用されつつある。これは、層間絶縁膜に予め形成した配線溝やコンタクトホールに、アルミニウム、近年では銅や銀等の金属をめっきによって埋込んだ後、余分な金属を化学機械的研磨(CMP)によって除去し平坦化するプロセス技術である。   As a wiring formation process of a semiconductor substrate, a process (so-called damascene process) in which a metal (conductor) is embedded in a wiring groove and a contact hole is being used. This is because the wiring trench or contact hole formed in advance in the interlayer insulating film is filled with aluminum, in recent years copper or silver, etc. by plating, and then the excess metal is removed by chemical mechanical polishing (CMP). Process technology.

この種の配線、例えば配線材料として銅を使用した銅配線にあっては、平坦化後、銅からなる配線の表面が外部に露出しており、配線(銅)の熱拡散を防止したり、例えばその後の酸化性雰囲気の絶縁膜(酸化膜)を積層して多層配線構造の半導体基板を作る場合等に、配線(銅)の酸化を防止したりするため、Co合金やNi合金等からなる配線保護層(蓋材)で露出配線の表面を選択的に覆って、配線の熱拡散及び酸化を防止することが検討されている。このCo合金やNi合金等は、例えば無電解めっきによって得られる。   In this type of wiring, for example, copper wiring using copper as the wiring material, the surface of the wiring made of copper is exposed to the outside after planarization, preventing thermal diffusion of the wiring (copper), For example, when an insulating film (oxide film) in an oxidizing atmosphere is laminated to make a semiconductor substrate having a multilayer wiring structure, it is made of a Co alloy, a Ni alloy, or the like in order to prevent the wiring (copper) from being oxidized. It has been studied to selectively cover the surface of the exposed wiring with a wiring protective layer (cover material) to prevent thermal diffusion and oxidation of the wiring. This Co alloy, Ni alloy, or the like can be obtained by electroless plating, for example.

例えば、図1に示すように、半導体ウエハ等の基板Wの表面に堆積したSiO2等からなる絶縁膜(層間絶縁膜)2の内部に、配線用の微細な凹部4を形成し、表面にTaN等からなるバリア層6を形成した後、例えば、銅めっきを施して、基板Wの表面に銅膜を成膜して凹部4の内部に銅を埋め込む(ダマシンプロセス)。しかる後、基板Wの表面にCMP(化学機械的研磨)を施して平坦化することで絶縁膜2の内部に銅からなる配線8を形成し、この配線(銅)8の表面に、例えば無電解めっきによって得られるCo−W−P合金膜からなる配線保護層(蓋材)9を選択的に形成して配線8を保護する(蓋めっきプロセス)。 For example, as shown in FIG. 1, a fine recess 4 for wiring is formed in an insulating film (interlayer insulating film) 2 made of SiO 2 or the like deposited on the surface of a substrate W such as a semiconductor wafer, and the surface is formed. After the barrier layer 6 made of TaN or the like is formed, for example, copper plating is performed, a copper film is formed on the surface of the substrate W, and copper is embedded in the recess 4 (damascene process). Thereafter, the surface of the substrate W is subjected to CMP (Chemical Mechanical Polishing) and planarized to form a wiring 8 made of copper inside the insulating film 2. A wiring protective layer (cover material) 9 made of a Co—WP alloy film obtained by electrolytic plating is selectively formed to protect the wiring 8 (cover plating process).

一般的な無電解めっきによって、このようなCo−W−P合金膜からなる配線保護層(蓋材)9を配線8の表面に選択的に形成する工程を説明する。先ず、CMP処理を施した半導体ウエハ等の基板Wを、例えば液温が25℃で、0.5MのH2SO4等の酸溶液(第1処理液)に1分程度接液させて、絶縁膜2の表面に残った銅等のCMP残渣等を除去する。そして、基板Wの表面を超純水等の洗浄液(第2処理液)で洗浄する(前洗浄処理プロセス)。次に例えば液温が25℃で、0.005g/LのPdCl2と0.2ml/LのHCL等の混合溶液(第1処理液)に基板Wを1分程度接液させ、これにより配線8の表面に触媒としてのPdを付着させて配線8の露出表面を活性化させる。そして、基板Wの表面を超純水等の洗浄液(第2処理液)で洗浄する(第1前処理プロセス)。 A process of selectively forming the wiring protective layer (covering material) 9 made of such a Co—WP alloy film on the surface of the wiring 8 by general electroless plating will be described. First, a substrate W such as a semiconductor wafer subjected to CMP treatment is brought into contact with an acid solution (first treatment liquid) such as 0.5 M H 2 SO 4 at a liquid temperature of 25 ° C. for about 1 minute, for example. CMP residues such as copper remaining on the surface of the insulating film 2 are removed. Then, the surface of the substrate W is cleaned with a cleaning liquid (second processing liquid) such as ultrapure water (pre-cleaning process). Next, for example, when the liquid temperature is 25 ° C., the substrate W is brought into contact with a mixed solution (first treatment liquid) such as 0.005 g / L PdCl 2 and 0.2 ml / L HCL for about 1 minute, thereby wiring. Pd as a catalyst is adhered to the surface of 8 to activate the exposed surface of the wiring 8. Then, the surface of the substrate W is cleaned with a cleaning liquid (second processing liquid) such as ultrapure water (first preprocessing process).

次に、例えば液温が25℃で、20g/LのNa3657・2H2O(クエン酸ナトリウム)等の溶液(第1処理液)に基板Wを接液させて、配線8の表面に中和処理を施す。そして、基板Wの表面を超純水(第2処理液)で水洗する(第2前処理プロセス)。次に例えば液温が80℃のCo−W−Pめっき液中に基板Wを、例えば120秒程度浸漬させて、活性化させた配線8の表面に選択的な無電解めっき(無電解Co−W−P蓋めっき)を施し、しかる後、基板Wの表面を超純水等の洗浄液で洗浄する(めっき処理プロセス)。これによって、配線8の表面にCo−W−P合金膜からなる配線保護層9を選択的に形成して配線8を保護する。 Next, the substrate W is brought into contact with a solution (first treatment liquid) such as 20 g / L Na 3 C 6 H 5 O 7 .2H 2 O (sodium citrate) at a liquid temperature of 25 ° C., for example. The surface of the wiring 8 is neutralized. Then, the surface of the substrate W is washed with ultrapure water (second treatment liquid) (second pretreatment process). Next, for example, the substrate W is immersed in a Co—WP plating solution having a liquid temperature of 80 ° C. for about 120 seconds, for example, and the surface of the activated wiring 8 is selectively electrolessly plated (electroless Co— (W-P lid plating) is performed, and then the surface of the substrate W is washed with a cleaning liquid such as ultrapure water (plating process). Thus, the wiring protection layer 9 made of a Co—WP alloy film is selectively formed on the surface of the wiring 8 to protect the wiring 8.

従来、安定的且つ均一な基板のめっき(例えば無電解めっき)処理、或いは安定的且つ均一な基板のめっき前処理や洗浄処理等を行う方法として、基板を処理液に浸漬させてその表面(被処理面)に処理液を接触させるディップ処理方式が一般に用いられてきた。このディップ処理方式を採用した基板処理装置にあっては、表面表面の周縁部をシールして基板を保持する基板保持装置が一般に備えられ、これによって、基板を基板保持装置で保持し処理液に浸漬させて処理する際に、処理液が基板表面の周縁部、更には裏面側に回り込むことを防止するようにしている。   Conventionally, as a method of performing stable and uniform substrate plating (for example, electroless plating) treatment or stable and uniform substrate pre-plating treatment or cleaning treatment, the substrate is immersed in a treatment solution and its surface (covered) is treated. A dip treatment method in which a treatment liquid is brought into contact with the treatment surface has been generally used. In a substrate processing apparatus that employs this dip processing method, a substrate holding device that seals the peripheral portion of the surface surface and holds the substrate is generally provided, whereby the substrate is held by the substrate holding device and used as a processing liquid. When processing by immersing, the processing liquid is prevented from wrapping around the peripheral portion of the substrate surface and further to the back surface side.

更に、ゴム等の弾性体から構成され、リング状に連続して延びる吸着シールを備え、この吸着シールを基板に向けて押圧して吸着シールの端面を基板の裏面周縁部に全周に亘って密着させ、更に吸着シールの内部を真空吸引することで、基板の裏面周縁部を吸着シールでリング状にシールしつつ吸着して基板を保持するようにした、いわゆる真空吸着方式を採用した基板保持装置が開発されている。   Furthermore, the suction seal is made of an elastic body such as rubber and continuously extends in a ring shape, and the suction seal is pressed against the substrate so that the end surface of the suction seal extends over the entire periphery of the back surface of the substrate. Substrate holding that employs a so-called vacuum suction system that holds the substrate while adhering to it, and sucking the inside of the suction seal in a vacuum while sealing the back peripheral edge of the substrate in a ring shape with the suction seal Equipment has been developed.

しかしながら、前述の真空吸着方式を採用した基板保持装置にあっては、基板保持装置の各構成部材の寸法公差や基板のばらつき、更には弾性体からなる吸着シールに作用する偏圧等によって、吸着シールの内部の真空吸引に先立って、水平に支持した基板の裏面周縁部に吸着シールの端面を全周に亘って隙間なく確実に密着させることができず、このため、基板を吸着保持する際に空気漏れが生じて、基板を吸着保持できないことがあるといった問題があった。   However, in the substrate holding device adopting the above-described vacuum suction method, the suction is caused by the dimensional tolerance of each component of the substrate holding device, the variation of the substrate, and the bias pressure acting on the suction seal made of an elastic body. Prior to vacuum suction inside the seal, the end surface of the suction seal cannot be securely adhered to the peripheral edge of the back surface of the horizontally supported substrate without any gaps. There was a problem that air leakage occurred and the substrate could not be adsorbed and held.

本発明は上記事情に鑑みてなされたもので、基板の裏面周縁部を吸着シールの端面に該吸着シールの全周に亘って隙間なく確実に密着させて、基板を確実に吸着保持することができるようにした基板保持装置及び基板保持方法、並びに基板処理装置を提供することを目的とする。   The present invention has been made in view of the above circumstances, and can reliably hold the substrate by adhering the peripheral edge of the back surface of the substrate to the end surface of the suction seal over the entire circumference of the suction seal without any gap. It is an object of the present invention to provide a substrate holding apparatus, a substrate holding method, and a substrate processing apparatus that can be used.

請求項1に記載の発明は、表面を下向きにして基板を支持する基板押え部と、前記基板押え部で支持した基板の裏面周縁部をリング状にシールしながら吸着して基板を保持する吸着シールを備えた吸着ヘッドとを有し、前記基板押え部には、該基板押え部の前記吸着ヘッドに向けた相対的な移動に伴って、該基板押え部で支持した基板の表面周縁部に当接して該基板を前記吸着ヘッドに向けて押圧する可動爪を有する複数の押圧機構が円周方向に沿った位置に設けられ、前記可動爪は、枢軸を介して鉛直方向に回転自在に支承されて前記基板押え部の直径方向に沿った位置に配置され、この枢軸を挟んだ外周側で弾性体を介して下方に付勢され、内周側で基板の表面周縁部に接触するように構成されていることを特徴とする基板保持装置である。 According to the first aspect of the present invention, the substrate holding portion that holds the substrate by adsorbing the substrate holding portion that supports the substrate with the surface facing down and the back surface peripheral portion of the substrate supported by the substrate holding portion in a ring shape. A suction head provided with a seal, and the substrate pressing portion is attached to the peripheral edge portion of the surface of the substrate supported by the substrate pressing portion as the substrate pressing portion moves relative to the suction head. a plurality of pressing mechanism having a movable pawl abuts with the substrate is pressed toward the suction head is found provided at a position along the circumferential direction, the movable pawl, rotatably in a vertical direction through a pivot It is supported and arranged at a position along the diametrical direction of the substrate pressing portion, and is urged downward via an elastic body on the outer peripheral side across the pivot, and contacts the surface peripheral portion of the substrate on the inner peripheral side. substrate holding apparatus der, characterized by being configured to .

これにより、基板押え部で支持した基板を、複数の押圧機構を介して、円周方向に沿った複数箇所で吸着ヘッドに向けて個々に押圧することで、基板の裏面周縁部を吸着シールの端面に該吸着シールの全周に亘って隙間なく確実に密着させて、基板を確実に吸着保持することができる。   Thus, the substrate supported by the substrate pressing portion is individually pressed toward the suction head at a plurality of locations along the circumferential direction via a plurality of pressing mechanisms, so that the back surface peripheral portion of the substrate is attached to the suction seal. It is possible to securely hold the substrate by adhering to the end face without any gap over the entire circumference of the suction seal.

また、基板押え部を吸着ヘッドに向けて相対的に移動させることで、押圧機構の可動爪を介して、基板の裏面周縁部を吸着シールの端面に該吸着シールの全周に亘って隙間なく確実に密着させることができる。 In addition, by moving the substrate pressing portion relatively toward the suction head, there is no gap across the entire periphery of the suction seal from the peripheral edge of the back surface of the substrate to the end surface of the suction seal via the movable claw of the pressing mechanism. It is possible to ensure close contact.

更に、基板押え部の吸着ヘッドに向けた相対的な移動に伴って、枢軸を挟んで外周側に配置された弾性体の弾性力を介して、可動爪の枢軸を挟んだ内周側で基板を吸着ヘッドに向けて上方に押圧することができる。
請求項に記載の発明は、前記弾性体が、略円錐台状のゴムからなることを特徴とする請求項記載の基板保持装置である。
Further, as the substrate pressing portion moves relative to the suction head, the substrate is formed on the inner peripheral side with the pivot of the movable claw interposed therebetween, via the elastic force of the elastic body disposed on the outer periphery with the pivot interposed. Can be pressed upward toward the suction head.
A second aspect of the present invention is the substrate holding apparatus according to the first aspect, wherein the elastic body is made of rubber having a substantially truncated cone shape.

請求項に記載の発明は、表面を下向きにして基板を支持する基板押え部と、前記基板押え部で支持した基板の裏面周縁部をリング状にシールしながら吸着して基板を保持する吸着シールを備えた吸着ヘッドとを有し、前記基板押え部は、基部と、該基部と所定間隔離間させて配置され、周縁部に備えられた連結部を介して傾動自在に連結されて基板を支持する基板支持部とを有することを特徴とする基板保持装置である。 The invention according to claim 3 is an adsorption for holding the substrate by adsorbing the substrate holding portion supporting the substrate with the surface facing downward and the back surface peripheral portion of the substrate supported by the substrate holding portion in a ring shape. A suction head provided with a seal, and the substrate pressing portion is disposed at a predetermined interval from the base portion and is connected to the base portion so as to be tiltable via a connecting portion provided at a peripheral edge portion. It is a substrate holding device characterized by having a substrate support part to support.

これにより、基板押え部の基板支持部で支持した基板の裏面がなす平面と、吸着シールの端面がなす平面とが互いに傾いた状態にあっても、基板の裏面と吸着シールの端面とが互いに当接する際に基板が傾動してこの傾きを是正し、これによって、片当たりを防止して、基板の裏面周縁部を吸着シールの端面に該吸着シールの全周に亘って隙間なく確実に当接させることができる。   Thereby, even if the plane formed by the back surface of the substrate supported by the substrate support portion of the substrate pressing portion and the plane formed by the end surface of the suction seal are inclined with respect to each other, the back surface of the substrate and the end surface of the suction seal are mutually When the substrate comes into contact, the substrate tilts and this tilt is corrected.This prevents contact with each other, so that the peripheral edge of the back surface of the substrate is securely applied to the end surface of the suction seal without any gap over the entire circumference of the suction seal. Can be touched.

請求項に記載の発明は、前記連結部が、前記基部側部材と前記基板支持部側部材を弾性的に連結する弾性体を有することを特徴とする請求項記載の基板保持装置である。
請求項に記載の発明は、前記弾性体が、圧縮コイルばねからなることを特徴とする請求項記載の基板保持装置である。
The invention according to claim 4 is the substrate holding apparatus according to claim 3 , wherein the connecting portion includes an elastic body that elastically connects the base side member and the substrate support portion side member. .
A fifth aspect of the present invention is the substrate holding apparatus according to the fourth aspect, wherein the elastic body is a compression coil spring.

請求項に記載の発明は、表面を下向きにして基板押え部で基板を支持し、この基板を支持した基板押え部をリング状に連続して延びる吸着シール部に向けて相対的に移動させ、枢軸を介して鉛直方向に回転自在に支承されて前記基板押え部の直径方向に沿った位置に配置され、この枢軸を挟んだ外周側で弾性体を介して下方に付勢され、内周側で基板の表面周縁部に接触するように構成されている複数の可動爪を、前記基板押え部の移動に伴って、前記基板板押え部で支持した基板の表面周縁部に当接させ、該基板を前記吸着シール部に向けて押圧して該基板の裏面周縁部を前記吸着シール部に密着させ、前記吸着シール部を吸引して基板を保持することを特徴とする基板保持方法である。
請求項に記載の発明は、基部と所定間隔離間させて配置され、周縁部に備えられた連結部を介して傾動自在に連結されて基板を支持する基板押え部の基板支持部で表面を下向きにして基板を支持し、この基板を前記基板支持部で支持した前記基板押え部をリング状に連続して延びる吸着シール部に向けて移動させ該移動に伴って、前記基板支持部で支持した基板を前記連結部を介して傾動させて基板の裏面周縁部を前記吸着シール部に密着させ、前記吸着シール部を吸引して基板を保持することを特徴とする基板保持方法である。
In the invention according to claim 6 , the substrate is supported by the substrate pressing portion with the surface facing downward, and the substrate pressing portion supporting the substrate is relatively moved toward the suction seal portion continuously extending in a ring shape. The substrate holder is rotatably supported in a vertical direction via a pivot and is disposed at a position along the diameter direction of the substrate pressing portion, and is biased downward via an elastic body on the outer peripheral side across the pivot, A plurality of movable claws configured to come into contact with the surface peripheral edge of the substrate on the side are brought into contact with the surface peripheral edge of the substrate supported by the substrate plate pressing portion in accordance with the movement of the substrate pressing portion, The substrate holding method is characterized in that the substrate is pressed toward the suction seal portion to bring a back surface peripheral portion of the substrate into close contact with the suction seal portion, and the suction seal portion is sucked to hold the substrate. .
According to the seventh aspect of the present invention, the substrate support portion of the substrate pressing portion that is disposed to be spaced apart from the base portion by a predetermined distance and is tiltably connected via a connecting portion provided at the peripheral edge portion to support the substrate. downward to support the substrate, the substrate holding portion which supports the substrate in the substrate support is moved toward the suction sealing portion extending continuously in a ring shape, with the said mobile, in the substrate support portion The substrate holding method is characterized in that the substrate supported is tilted through the connecting portion, the peripheral edge of the back surface of the substrate is brought into close contact with the suction seal portion, and the suction seal portion is sucked to hold the substrate.

請求項に記載の発明は、基板を保持する基板保持装置と、前記基板保持装置で保持した基板の表面を内部に溜めた処理液に接触させる処理槽とを有し、 前記基板保持装置は、表面を下向きにして基板を支持する基板押え部と、前記基板押え部で支持した基板の裏面周縁部をリング状にシールしながら吸着して基板を保持する吸着シールを備えた吸着ヘッドとを有し、前記基板押え部には、該基板押え部の前記吸着ヘッドに向けた相対的な移動に伴って、該基板押え部で支持した基板の表面周縁部に当接して該基板を前記吸着ヘッドに向けて押圧する可動爪を有する複数の押圧機構が円周方向に沿った位置に設けられ、前記可動爪は、枢軸を介して鉛直方向に回転自在に支承されて前記基板押え部の直径方向に沿った位置に配置され、この枢軸を挟んだ外周側で弾性体を介して下方に付勢され、内周側で基板の表面周縁部に接触するように構成されていることを特徴とする基板処理装置である。 The invention according to claim 8 includes a substrate holding device for holding a substrate, and a processing tank for bringing a surface of the substrate held by the substrate holding device into contact with a processing liquid stored inside, wherein the substrate holding device is A substrate holding portion that supports the substrate with the surface facing downward, and a suction head that includes a suction seal that holds the substrate by sucking while sealing the peripheral edge of the back surface of the substrate supported by the substrate pressing portion in a ring shape. The substrate holding portion comes into contact with the peripheral edge of the surface of the substrate supported by the substrate holding portion with relative movement of the substrate holding portion toward the suction head, and holds the substrate. a plurality of pressing mechanism having a movable claw for pressing the head is found provided at a position along the circumferential direction, wherein the movable pawl is rotatably supported in a vertical direction through a pivot with the substrate holding portion It is arranged at a position along the diametrical direction and this pivot A substrate processing apparatus, wherein the substrate processing apparatus is configured to be biased downward via an elastic body on the outer peripheral side across the shaft and to contact the peripheral edge of the surface of the substrate on the inner peripheral side .

請求項に記載の発明は、基板を保持する基板保持装置と、前記基板保持装置で保持した基板の表面を内部に溜めた処理液に接触させる処理槽とを有し、前記基板保持装置は、表面を下向きにして基板を支持する基板押え部と、前記基板押え部で支持した基板の裏面周縁部をリング状にシールしながら吸着して基板を保持する吸着シールを備えた吸着ヘッドとを有し、前記基板押え部は、基部と、該基部と所定間隔離間させて配置され、周縁部に備えられた連結部を介して傾動自在に連結されて基板を支持する基板支持部とを有することを特徴とする基板処理装置である。
請求項10に記載の発明は、前記処理液による基板の表面の処理が、無電解めっき処理であることを特徴とする請求項8または9記載の基板処理装置である。
The invention according to claim 9 includes a substrate holding device for holding a substrate, and a processing tank for bringing a surface of the substrate held by the substrate holding device into contact with a processing liquid stored inside, wherein the substrate holding device is A substrate holding portion that supports the substrate with the surface facing downward, and a suction head that includes a suction seal that holds the substrate by sucking while sealing the peripheral edge of the back surface of the substrate supported by the substrate pressing portion in a ring shape. The substrate pressing portion includes a base portion and a substrate support portion that is arranged at a predetermined distance from the base portion and is tiltably connected via a connecting portion provided at a peripheral edge portion to support the substrate. This is a substrate processing apparatus.
A tenth aspect of the present invention is the substrate processing apparatus according to the eighth or ninth aspect, wherein the treatment of the surface of the substrate by the treatment liquid is an electroless plating treatment.

本発明によれば、基板の裏面周縁部を吸着シールの端面に該吸着シールの全周に亘って隙間なく確実に密着させ、これによって、吸着シールの内部を吸引することで、基板を吸着シールで確実に吸着保持することができる。   According to the present invention, the peripheral edge of the back surface of the substrate is securely brought into close contact with the end surface of the suction seal over the entire circumference of the suction seal without any gaps. It is possible to securely hold by suction.

以下、本発明の実施の形態を図面を参照して詳細に説明する。
図2は、本発明の実施の形態に係る基板保持装置を示す概略断面図である。図2に示すように、基板保持装置80は、基板ヘッド81と基板ヘッド駆動部120とを具備している。基板ヘッド81は、下面が開放された略円筒状の基板押え部82の内部に、略円形の吸着ヘッド84を収納して構成されている。基板ヘッド駆動部120は、その内部に、吸着ヘッド84を回転駆動する基板回転用モータ121と、基板押え部82を上下の所定位置(少なくとも3カ所)に昇降する基板押え部駆動用シリンダ122とを具備している。そして、吸着ヘッド84は、基板回転用モータ121によって回転駆動され、基板押え部82は、基板押え部駆動用シリンダ122によって上下動される。つまり吸着ヘッド84は回転のみで上下動せず、基板押え部82は吸着ヘッド84と一緒に回転し、上下動もする。
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
FIG. 2 is a schematic sectional view showing the substrate holding apparatus according to the embodiment of the present invention. As shown in FIG. 2, the substrate holding device 80 includes a substrate head 81 and a substrate head driving unit 120. The substrate head 81 is configured by accommodating a substantially circular suction head 84 inside a substantially cylindrical substrate pressing portion 82 whose bottom surface is open. The substrate head drive unit 120 includes therein a substrate rotation motor 121 that rotationally drives the suction head 84, a substrate presser drive cylinder 122 that raises and lowers the substrate presser 82 to predetermined upper and lower positions (at least three locations), and the like. It has. The suction head 84 is rotationally driven by the substrate rotation motor 121, and the substrate pressing portion 82 is moved up and down by the substrate pressing portion driving cylinder 122. That is, the suction head 84 does not move up and down only by rotation, and the substrate pressing portion 82 rotates together with the suction head 84 and moves up and down.

図3は、吸着ヘッド84の要部拡大断面である。図2及び図3に示すように、吸着ヘッド84は、内部に真空供給ライン(真空兼気体供給ライン)86を設けた略円板状の支持体88を有し、この支持体88の下面に吸着シール90がリング状に取付けられ、このリング状の吸着シール90の内側に位置して、複数のプッシャ92が配置されている。また、支持体88の内部には、上下に貫通する開口からなる通気部(図2参照)94が設けられている。   FIG. 3 is an enlarged cross-sectional view of the main part of the suction head 84. As shown in FIGS. 2 and 3, the suction head 84 has a substantially disc-shaped support body 88 provided with a vacuum supply line (vacuum and gas supply line) 86 inside. A suction seal 90 is attached in a ring shape, and a plurality of pushers 92 are arranged inside the ring-shaped suction seal 90. Further, a ventilation portion (see FIG. 2) 94 having an opening penetrating vertically is provided inside the support 88.

吸着シール90は、例えばゴム等からなる弾性体で構成され、その下端部を支持体88の下面から下方に突出させ、吸着シール90に当接する基板Wの裏面周縁部をリング状に吸着して基板Wを保持することで、基板Wの裏面(吸着シール90によってリング状にシールされた内側部分)への処理液(めっき液)の浸入を防止するシールの役目を果たす。吸着シール90の基板Wに接触する部分には、基板吸着溝(吸着兼引離し用孔)96が設けられ、この基板吸着溝96に真空供給ライン86が接続されている。これによって、この基板吸着溝96で基板Wの吸着及び引き離しを行うようになっている。なお吸着シール90の形状については、図に示す形状に限定されず、所定の円周幅にてリング状に吸着するものであればどのような形状及び構造でも構わないことは勿論である。   The suction seal 90 is made of, for example, an elastic body made of rubber or the like. The lower end portion of the suction seal 90 protrudes downward from the lower surface of the support 88, and the peripheral edge of the back surface of the substrate W contacting the suction seal 90 is adsorbed in a ring shape. Holding the substrate W serves as a seal that prevents the processing liquid (plating solution) from entering the back surface of the substrate W (the inner portion sealed in a ring shape by the suction seal 90). A portion of the suction seal 90 that comes into contact with the substrate W is provided with a substrate suction groove (suction and separation hole) 96, and a vacuum supply line 86 is connected to the substrate suction groove 96. As a result, the substrate W is sucked and separated by the substrate suction groove 96. The shape of the suction seal 90 is not limited to the shape shown in the drawing, and it is needless to say that it may have any shape and structure as long as it can be sucked in a ring shape with a predetermined circumferential width.

プッシャ92は、上面が開放された円筒箱型のケース100の内部に設けた収納部102にプッシャ本体104を収納した上で、ケース100の外周から張り出すフランジ部106をボルト108によって支持体88に固定することで構成されている。プッシャ本体104は、例えばフッ素樹脂製の合成ゴム材料等の伸縮可能な弾性材によって形成され、蛇腹状に形成された外周壁110の先端に押圧部112を設けて構成されている。そして押圧部112はケース100に設けた貫通孔114内に出入自在に挿入されている。この時、押圧部112の下面の位置は、吸着シール90の下面の位置よりも若干上方に位置している。またプッシャ本体104の裏面側に真空供給ライン86が接続されている。   The pusher 92 accommodates the pusher main body 104 in the accommodating portion 102 provided inside the cylindrical box-shaped case 100 whose upper surface is opened, and then supports the flange portion 106 protruding from the outer periphery of the case 100 with a bolt 88. It is comprised by fixing to. The pusher body 104 is formed of a stretchable elastic material such as a synthetic rubber material made of a fluororesin, for example, and is configured by providing a pressing portion 112 at the tip of an outer peripheral wall 110 formed in a bellows shape. And the press part 112 is inserted in the through-hole 114 provided in case 100 so that insertion / extraction is possible. At this time, the position of the lower surface of the pressing portion 112 is slightly above the position of the lower surface of the suction seal 90. A vacuum supply line 86 is connected to the back side of the pusher body 104.

これにより、真空供給ライン86に真空圧が供給された場合は、プッシャ本体104の内部が真空状態となり、プッシャ本体104の外周壁110が縮んで押圧部112がケース100の内部に引っ込み(図8及び図9に示す状態)、真空供給ライン86に気体が供給された場合は、プッシャ本体104の外周壁110が伸びて押圧部112がケース100の外部に突出する(図2に示す状態)ように構成されている。   Thereby, when a vacuum pressure is supplied to the vacuum supply line 86, the inside of the pusher body 104 is in a vacuum state, the outer peripheral wall 110 of the pusher body 104 is contracted, and the pressing portion 112 is retracted into the case 100 (FIG. 8). When the gas is supplied to the vacuum supply line 86, the outer peripheral wall 110 of the pusher body 104 extends and the pressing portion 112 protrudes to the outside of the case 100 (state shown in FIG. 2). It is configured.

図4は、基板押え部82の一部を切除して示す斜視図である。図2及び図4に示すように、基板押え部82は、基板押え部駆動用シリンダ123に連結される基部160と、該基部160と所定間間隔離間して配置されるリング状の基板支持部162と、基部160と基板支持部162とを互いに傾動可能に連結する一対の連結部163とから構成されている。そして、基板支持部162の円周方向に沿った位置には、基板Wの表面周縁部に当接して基板Wを支持し、基板押え部82の上昇に伴って、基板Wを吸着ヘッド84に向けて押圧する複数(図示では12個)の押圧機構164が所定のピッチで設けられている。   FIG. 4 is a perspective view showing a part of the substrate pressing portion 82 by cutting away. As shown in FIGS. 2 and 4, the substrate pressing portion 82 includes a base portion 160 connected to the substrate pressing portion driving cylinder 123, and a ring-shaped substrate supporting portion that is disposed at a predetermined interval from the base portion 160. 162, and a pair of connecting portions 163 that connect the base portion 160 and the substrate support portion 162 to each other so as to be tiltable. Then, at a position along the circumferential direction of the substrate support portion 162, the substrate W is supported by contacting the peripheral edge of the surface of the substrate W, and the substrate W is moved to the suction head 84 as the substrate pressing portion 82 is raised. A plurality (twelve in the drawing) of pressing mechanisms 164 that are pressed toward each other are provided at a predetermined pitch.

図5は、連結部163の分解斜視図である。図4及び図5に示すように、連結部163には、基部160の外周板170の周縁部下面に取付けられるガイドサポート172と、基板支持部162の固定リング174の上面に取付けられるガイドスペーサ176とを有している。そして、複数(図示では3本)のガイドボルト178が、その下部をガイドスペーサ176内を挿通させ固定リング174に螺合させて固定リング174にそれぞれ固定され、この各ガイドボルト178の上部がガイドサポート172に設けた各収納部180の内部にそれぞれ位置している。   FIG. 5 is an exploded perspective view of the connecting portion 163. As shown in FIGS. 4 and 5, the connecting portion 163 has a guide support 172 attached to the lower surface of the peripheral portion of the outer peripheral plate 170 of the base portion 160 and a guide spacer 176 attached to the upper surface of the fixing ring 174 of the substrate support portion 162. And have. A plurality (three in the figure) of guide bolts 178 are fixed to the fixing rings 174 by inserting the lower portions of the guide bolts 178 through the guide spacers 176 and screwed to the fixing rings 174. The upper portions of the guide bolts 178 are guides. It is located inside each storage portion 180 provided on the support 172.

そして、ガイドサポート172の各収納部180の内部には、下面を収納部180の底壁に、上面をボルト182を介してガイドボルト178の上面に取付けたカラー184の下面にそれぞれ当接した状態で、圧縮コイルばねからなる弾性体186がそれぞれ収納されている。これによって、基板支持部162は、その直径方向の両側において、弾性体(圧縮コイルばね)186の弾性力を介して、基部160に弾性的に連結されて、基板支持部162が基部160に対して傾動自在となるよう構成されている。   In each storage portion 180 of the guide support 172, the lower surface is in contact with the bottom wall of the storage portion 180 and the upper surface is in contact with the lower surface of the collar 184 attached to the upper surface of the guide bolt 178 via the bolt 182. Thus, the elastic bodies 186 made of compression coil springs are accommodated. As a result, the substrate support 162 is elastically connected to the base 160 via the elastic force of the elastic body (compression coil spring) 186 on both sides in the diametrical direction, and the substrate support 162 is connected to the base 160. And can be tilted freely.

このように、基板支持部162が基部160に対して傾動自在となるよう構成することで、基板押え部82の基板支持部162で支持した基板Wの裏面がなす平面と、吸着ヘッド84の吸着シール90の下端面がなす平面とが互いに傾いた状態にあっても、基板Wの裏面と吸着シール90の下端面とが互いに当接する際に基板Wが傾動してこの傾きを是正し、これによって、基板Wと吸着シール90の片当たりを防止して、基板Wの裏面周縁部を吸着シール90の下端面に該吸着シール90の全周に亘って隙間なく確実に当接させることができる。   In this way, by configuring the substrate support portion 162 to be tiltable with respect to the base portion 160, the plane formed by the back surface of the substrate W supported by the substrate support portion 162 of the substrate pressing portion 82 and the suction head 84 suction. Even when the flat surface formed by the lower end surface of the seal 90 is inclined with respect to each other, the substrate W tilts and corrects this inclination when the back surface of the substrate W and the lower end surface of the suction seal 90 abut each other. By this, it is possible to prevent the substrate W and the suction seal 90 from coming into contact with each other, and the peripheral edge of the back surface of the substrate W can be reliably brought into contact with the lower end surface of the suction seal 90 over the entire circumference of the suction seal 90 without any gap. .

図6は、押圧機構164を示す分解斜視図で、図7は、押圧機構164を吸着ヘッド84の吸着シール90と共に示す要部拡大断面図である。図4図、図6及び図7に示すように、この押圧機構164は、基板支持部162の固定リング174の直径方向に沿って配置され、固定リング174の内方に突出して基板Wの表面に接触する可動爪190が備えられている。この可動爪190の両側部には、その長さ方向のほぼ中央に位置して枢軸192が設けられ、この枢軸192は、固定リング174の下面にボルト194を介して取付けられるカバー196に回転自在に支承されている。これによって、可動爪190は、鉛直方向に回転するようになっている。   FIG. 6 is an exploded perspective view showing the pressing mechanism 164, and FIG. 7 is an enlarged cross-sectional view of the main part showing the pressing mechanism 164 together with the suction seal 90 of the suction head 84. As shown in FIGS. 4, 6, and 7, the pressing mechanism 164 is disposed along the diameter direction of the fixing ring 174 of the substrate support 162 and protrudes inward of the fixing ring 174 to protrude from the surface of the substrate W. A movable claw 190 that comes into contact with is provided. On both sides of the movable claw 190, a pivot 192 is provided substantially at the center in the length direction, and the pivot 192 is rotatable on a cover 196 attached to the lower surface of the fixed ring 174 via a bolt 194. It is supported by. Accordingly, the movable claw 190 is rotated in the vertical direction.

そして、可動爪190の枢軸192を挟んだ外周側に位置して、可動爪190と固定リング174との間には、円錐台状のゴムからなる弾性体198が、図7に示すように、縮み量δをもって配置され、これによって、可動爪190の枢軸192を挟んだ外周側が弾性体(ゴム)198の弾性力を介して下方に付勢されている。更に、この可動爪190の下方に位置するカバー196の棒状部196aは、可動爪190の枢軸192を挟んだ外周側の下面に当接してこの下降を規制するストッパとしての役割を果たすようになっている。   Then, an elastic body 198 made of a truncated cone-shaped rubber is located between the movable claw 190 and the fixing ring 174 and is located on the outer peripheral side with the pivot 192 of the movable claw 190 interposed therebetween, as shown in FIG. With the contraction amount δ, the outer peripheral side sandwiching the pivot 192 of the movable claw 190 is biased downward via the elastic force of the elastic body (rubber) 198. Further, the rod-shaped portion 196a of the cover 196 located below the movable claw 190 comes into contact with the lower surface on the outer peripheral side across the pivot 192 of the movable claw 190 and plays a role as a stopper that restricts the descent. ing.

これにより、図7に示すように、基板押え部82の可動爪190の枢軸192を挟んだ内周側に基板Wの表面を当接させて基板Wを支持し、この状態で基板押え部82を上昇させて、基板Wの裏面周縁部を吸着ヘッド84の吸着シール90に当接させ、更に基板押え部82を上昇させると、可動爪190は、枢軸192を挟んだ内周側が下降し、外周側が上昇するように回転する(なお、図7は、図面の便宜上、可動爪190のみが回転するように記載している)。このように可動爪190が回転すると、枢軸192を挟んだ外周側に配置した弾性体(ゴム)198が更に縮み、この弾性体198の弾性力が、枢軸192を挟んだ内周側において、基板Wを上昇させるように作用し、これによって、基板Wが吸着シール90に向かって押圧されて吸着シール90に密着する。   Accordingly, as shown in FIG. 7, the substrate W is supported by bringing the surface of the substrate W into contact with the inner peripheral side of the movable claw 190 of the substrate pressing portion 82 with the pivot 192 interposed therebetween, and in this state, the substrate pressing portion 82 is supported. , The peripheral edge of the back surface of the substrate W is brought into contact with the suction seal 90 of the suction head 84, and the substrate pressing portion 82 is further lifted, and the movable claw 190 is lowered on the inner peripheral side with the pivot 192 interposed therebetween, The outer peripheral side rotates so as to rise (for convenience of drawing, FIG. 7 shows only the movable claw 190 rotating). When the movable claw 190 rotates in this way, the elastic body (rubber) 198 disposed on the outer peripheral side across the pivot 192 further contracts, and the elastic force of the elastic body 198 is on the inner peripheral side across the pivot 192. It acts to raise W, whereby the substrate W is pressed toward the suction seal 90 and comes into close contact with the suction seal 90.

このように、基板押え部82に備えた複数の押圧機構164の可動爪190で基板Wを一旦支持し、この複数の押圧機構164を介して、基板Wの円周方向に沿った複数箇所で基板Wを吸着ヘッド84の吸着シール90に向けて個々に押圧することで、基板Wの裏面周縁部を吸着シール90の下端面に該吸着シール90の全周に亘って隙間なく確実に密着させ、この状態で吸着シール90内を真空吸引することで、基板Wを吸着シール90に確実に吸着保持することができる。特に、この例によれば、基板押え部82を上昇させることで、この基板押え部82の上昇に伴って、可動爪190及び弾性体198を介して、基板Wの裏面周縁部を吸着シール90の端面に該吸着シール90の全周に亘って隙間なく確実に密着させることができる。   As described above, the substrate W is temporarily supported by the movable claws 190 of the plurality of pressing mechanisms 164 provided in the substrate pressing portion 82, and is provided at a plurality of locations along the circumferential direction of the substrate W via the plurality of pressing mechanisms 164. By individually pressing the substrate W toward the suction seal 90 of the suction head 84, the peripheral edge of the back surface of the substrate W is securely adhered to the lower end surface of the suction seal 90 without any gap over the entire circumference of the suction seal 90. In this state, the substrate W can be reliably sucked and held on the suction seal 90 by vacuum suction inside the suction seal 90. In particular, according to this example, by raising the substrate pressing portion 82, the back peripheral edge portion of the substrate W is adsorbed and sealed 90 via the movable claw 190 and the elastic body 198 as the substrate pressing portion 82 rises. It is possible to reliably adhere to the end surface of the suction seal 90 without any gap over the entire circumference of the suction seal 90.

なお、上記の例では、基板押え部82に連結部163と押圧機構164を設けて、基板Wの裏面周縁部を吸着シール90の端面に該吸着シール90の全周に亘って隙間なくより確実に密着させることができるようにした例を示しているが、連結部163と押圧機構164の一方のみを設けるようにしてもよい。   In the above example, the substrate pressing portion 82 is provided with the connecting portion 163 and the pressing mechanism 164 so that the back surface peripheral edge portion of the substrate W is more reliably attached to the end surface of the suction seal 90 over the entire circumference of the suction seal 90. However, only one of the connection portion 163 and the pressing mechanism 164 may be provided.

次に、基板保持装置80の動作を、図8及び図9を更に参照して説明する。図8は、基板Wを吸着シール90で吸着保持する際の状態(基板吸着位置)の要部を示し、図9は、基板Wを吸着シール90で吸着保持し、更に基板押え部82を下降させた時の状態(基板処理位置)の要部を示す。   Next, the operation of the substrate holding device 80 will be described with further reference to FIGS. FIG. 8 shows the main part of the state (substrate suction position) when the substrate W is sucked and held by the suction seal 90. FIG. 9 shows the substrate W held by the suction seal 90 and lowers the substrate presser 82. The main part of the state (substrate processing position) when it was made to show is shown.

先ず、図2に示すように、吸着ヘッド84を回転させることなく、基板押え部82を最も下の位置(基板受渡し位置)に移動し、ロボットハンド(図示せず)で吸着された基板Wを基板ヘッド81の内部に挿入し、ロボットハンドの吸着を解除することで、基板Wを押圧機構164の可動爪190の上に載置する。このとき基板Wの表面(被処理面)は、下を向いている。そしてロボットハンドを基板ヘッド81から抜き出す。次に、基板押え部82を上昇させ、基板Wの裏面(上面)周面部に吸着シール90の下端面を当接させる。この時、基板押え部82の基板支持部162で支持した基板Wの裏面がなす平面と、吸着ヘッド84の吸着シール90の下端面がなす平面とが互いに傾いた状態にあっても、連結部163を介して基板Wが傾動してこの傾きが是正される。   First, as shown in FIG. 2, without rotating the suction head 84, the substrate pressing portion 82 is moved to the lowest position (substrate delivery position), and the substrate W sucked by the robot hand (not shown) is moved. The substrate W is placed on the movable claw 190 of the pressing mechanism 164 by inserting it into the substrate head 81 and releasing the suction of the robot hand. At this time, the surface (surface to be processed) of the substrate W faces downward. Then, the robot hand is extracted from the substrate head 81. Next, the substrate pressing portion 82 is raised, and the lower end surface of the suction seal 90 is brought into contact with the peripheral surface portion of the back surface (upper surface) of the substrate W. At this time, even if the plane formed by the back surface of the substrate W supported by the substrate support portion 162 of the substrate pressing portion 82 and the plane formed by the lower end surface of the suction seal 90 of the suction head 84 are inclined with respect to each other, the connecting portion The substrate W is tilted through 163 to correct this tilt.

そして、基板押え部82を更に上昇させ、これによって、可動爪190を回転させ、枢軸192を挟んだ外周側に配置した弾性体(ゴム)198を更に縮ませることで、この弾性体198の弾性力を、枢軸192を挟んだ内周側において、基板Wを上昇させるように作用させて、基板Wを吸着シール90に向かって、複数箇所で均等に押圧して吸着シール90に密着させる。   Then, the substrate pressing portion 82 is further raised, whereby the movable claw 190 is rotated, and the elastic body (rubber) 198 disposed on the outer peripheral side across the pivot 192 is further contracted, whereby the elasticity of the elastic body 198 is increased. The force is applied so as to raise the substrate W on the inner peripheral side with the pivot 192 interposed therebetween, and the substrate W is pressed evenly toward the suction seal 90 at a plurality of locations so as to be in close contact with the suction seal 90.

この状態で、基板吸着溝96内を真空引きすることで、基板Wの裏面周縁部を吸着シール90に吸着して基板Wを保持する。このとき真空力は、吸着シール90の基板Wに接触する部分の内部の基板吸着溝96内のみに発生する。このときの状態を図8に示す。これによって、基板Wの裏面の吸着シール90によって囲まれる部分は、吸着シール90によるシールによって基板の表面(被処理面)から遮断される。   In this state, the inside of the substrate suction groove 96 is evacuated to suck the peripheral edge of the back surface of the substrate W onto the suction seal 90 to hold the substrate W. At this time, the vacuum force is generated only in the substrate suction groove 96 inside the portion of the suction seal 90 that contacts the substrate W. The state at this time is shown in FIG. As a result, the portion surrounded by the suction seal 90 on the back surface of the substrate W is blocked from the surface (surface to be processed) of the substrate by the seal by the suction seal 90.

この例によれば、基板Wの外周をリング状の小さな幅(径方向)の吸着シール90にて吸着することにより、吸着幅を極力小さく抑えて、基板Wへの影響(撓み等)をなくすことができる。具体的には、吸着シール90の幅は、非常に狭く、吸着シール90が基板Wに接触する部分は、例えば基板Wの外周からその内側5mmまでの間の部分である。基板Wの裏面の外周部のみが吸着シール90と接触するので、基板処理時の処理液の温度が不必要に吸着シール90との接触面を伝達して逃げる恐れもなくなる。   According to this example, by adsorbing the outer periphery of the substrate W with the ring-shaped adsorption seal 90 having a small width (in the radial direction), the adsorption width is suppressed as much as possible, and the influence (deflection etc.) on the substrate W is eliminated. be able to. Specifically, the width of the suction seal 90 is very narrow, and the portion where the suction seal 90 contacts the substrate W is, for example, a portion between the outer periphery of the substrate W and 5 mm inside thereof. Since only the outer peripheral portion of the back surface of the substrate W is in contact with the suction seal 90, there is no possibility that the temperature of the processing liquid during substrate processing unnecessarily transmits the contact surface with the suction seal 90 and escapes.

次に、図9に示すように、基板押え部82を少し(例えば数mm)下降させて基板Wを可動爪190から引き離す。この状態で、基板保持装置80全体を下降させて、図示しないめっき液等の処理液中に浸漬させると、基板Wは、その裏面で吸着保持されているだけなので、基板Wの表面全域及びエッジ部分についても全て処理液中にディップして、その処理を行うことが可能となる。   Next, as shown in FIG. 9, the substrate pressing portion 82 is slightly lowered (for example, several mm), and the substrate W is pulled away from the movable claw 190. In this state, when the entire substrate holding device 80 is lowered and immersed in a processing solution such as a plating solution (not shown), the substrate W is only sucked and held on the back surface thereof, so It is possible to dip all the portions into the processing liquid and perform the processing.

更に、基板押え部82が下降して基板Wから離れ、基板Wは、その裏面のみが吸着して保持されているだけなので、基板Wを処理液に浸漬しても基板Wに対する処理液の流れが阻害されることがなく、基板の表面全域において均一な処理液の流れが形成される。またこの処理液の流れとともに、基板Wの表面上に巻き込まれた気泡や、処理によって発生した気泡を基板Wの表面上から上方に排出することができる。これによって、めっき等の処理に悪影響を及ぼす不均一な処理液の流れや気泡の影響を解決し、エッジを含んだ基板表面全域に均一なめっき等の処理を行うことが可能となる。また基板Wの裏面のリング状に真空吸着した部分の内側は、吸着シール90によるシールによって表面から遮断されるので、処理液が基板Wの裏面の吸着シール90の内側へ浸入するのを防ぐことができる。   Furthermore, since the substrate pressing portion 82 is lowered and separated from the substrate W, and only the back surface of the substrate W is adsorbed and held, the flow of the processing liquid to the substrate W even if the substrate W is immersed in the processing solution. Is prevented, and a uniform flow of the processing liquid is formed over the entire surface of the substrate. In addition, along with the flow of the processing liquid, bubbles entrained on the surface of the substrate W and bubbles generated by the processing can be discharged upward from the surface of the substrate W. As a result, it is possible to solve the influence of the non-uniform treatment liquid flow and bubbles that adversely affect the treatment such as plating, and to perform uniform treatment such as plating over the entire substrate surface including the edge. In addition, the inside of the portion of the back surface of the substrate W that is vacuum-sucked in a ring shape is blocked from the surface by the seal by the suction seal 90, so that the processing liquid is prevented from entering the inside of the suction seal 90 on the back surface of the substrate W. Can do.

この時、図8及び図9に示すように、真空供給ライン86に接続されたプッシャ92のプッシャ本体104は、真空引きによって、その押圧部112がケース100側に引っ込んでおり、基板Wの裏面から所定の狭い間隔だけ離れている。従って、基板Wの裏面に押圧部112が接触することで、基板処理時の処理液の温度が不必要に押圧部112との接触面を伝達して逃げる恐れもない。   At this time, as shown in FIGS. 8 and 9, the pusher main body 104 of the pusher 92 connected to the vacuum supply line 86 has its pressing portion 112 retracted to the case 100 side by evacuation. At a predetermined narrow distance from Therefore, when the pressing portion 112 comes into contact with the back surface of the substrate W, there is no possibility that the temperature of the processing liquid during substrate processing unnecessarily transmits the contact surface with the pressing portion 112 and escapes.

また、このとき吸着ヘッド84の支持体88に通気部94を設けているので、支持体88と基板Wと吸着シール90によって囲まれる基板Wの裏面の空間が密閉空間となることはない。従って、基板Wが処理液に浸漬されること等によって、前記空間内の気体が膨張や収縮しても、これによって基板Wに撓みが生じる恐れもない。   At this time, since the ventilation portion 94 is provided in the support 88 of the suction head 84, the space on the back surface of the substrate W surrounded by the support 88, the substrate W, and the suction seal 90 does not become a sealed space. Therefore, even if the gas in the space expands or contracts due to the substrate W being immersed in the processing liquid or the like, there is no possibility that the substrate W will be bent.

基板Wのめっき等の処理が終了した後、基板押え部82を、図8に示す位置(基板吸着位置)まで上昇させて基板Wを可動爪190の上に載置し、真空供給ライン86に気体(不活性ガス、例えば窒素ガス)を供給することで、基板吸着溝96からこの気体を噴出するとともに、この気体の供給圧力によって、プッシャ92のプッシャ本体104内を加圧し、その押圧部112をケース100から突出させて、基板Wをその裏面から押圧する。同時に、基板押え部82を下降させることで、基板Wを吸着シール90から引き離し、さらに基板押え部82を図2に示す位置(基板受渡し位置)まで下降させる。そして、基板ヘッド81の内部にロボットハンドを挿入して基板Wを外部に引き出す。   After the processing such as plating of the substrate W is completed, the substrate pressing portion 82 is raised to the position shown in FIG. 8 (substrate adsorption position), and the substrate W is placed on the movable claw 190, and the vacuum supply line 86 is placed. By supplying gas (inert gas, for example, nitrogen gas), this gas is ejected from the substrate adsorption groove 96, and the inside of the pusher main body 104 of the pusher 92 is pressurized by the supply pressure of this gas, and the pressing portion 112. Is protruded from the case 100 and the substrate W is pressed from the back surface thereof. At the same time, by lowering the substrate holding portion 82, the substrate W is separated from the suction seal 90, and the substrate holding portion 82 is further lowered to the position (substrate delivery position) shown in FIG. Then, a robot hand is inserted into the substrate head 81 and the substrate W is pulled out.

このように基板吸着溝96から気体を噴出するとともに、プッシャ92の押圧部112によって基板Wの裏面を押圧することで、例えゴム等の弾性体で形成されている吸着シール90が経年変化等により基板に接着しやすくなって、一旦吸着シール90に吸着した基板Wが基板吸着溝96からの気体の噴出だけでは引き剥がれにくくなっていても、プッシャ92の押圧部112による基板Wの裏面の押圧によって、容易且つ確実に基板Wを吸着シール90から引き剥がすことができる   In this way, gas is ejected from the substrate suction groove 96 and the back surface of the substrate W is pressed by the pressing portion 112 of the pusher 92, so that the suction seal 90 formed of an elastic body such as rubber is changed over time. Even if it becomes easy to adhere to the substrate and the substrate W once adsorbed to the adsorption seal 90 is difficult to be peeled off only by gas ejection from the substrate adsorption groove 96, the pressing of the back surface of the substrate W by the pressing portion 112 of the pusher 92 is performed. Thus, the substrate W can be easily and reliably peeled off from the suction seal 90.

図10(a)は、上記構造の基板保持装置80を用いて構成された基板処理装置1の側面図で、図10(b)は、その概略側断面図である。図10に示すように、基板処理装置1は、内部にめっき液等の処理液Qを溜めて基板Wのディップ処理を行う処理槽10と、この処理槽10の開口部11を塞ぐカバー40と、カバー40の上面に取付けられる噴霧ノズル60と、カバー40を駆動(旋回)する駆動機構70と、基板Wを保持する基板保持装置80と、基板保持装置80全体を駆動する基板保持装置駆動機構130と、処理槽10内の処理液Qを循環する処理液循環装置150とを具備している。   FIG. 10A is a side view of the substrate processing apparatus 1 configured using the substrate holding apparatus 80 having the above structure, and FIG. 10B is a schematic side sectional view thereof. As shown in FIG. 10, the substrate processing apparatus 1 includes a processing tank 10 for dipping the substrate W by storing a processing liquid Q such as a plating solution, and a cover 40 for closing the opening 11 of the processing tank 10. The spray nozzle 60 attached to the upper surface of the cover 40, the drive mechanism 70 for driving (turning) the cover 40, the substrate holding device 80 for holding the substrate W, and the substrate holding device driving mechanism for driving the entire substrate holding device 80. 130 and a processing liquid circulation device 150 that circulates the processing liquid Q in the processing tank 10.

処理槽10は、処理液Qを溜める容器形状の処理槽本体13と、処理槽本体13の上端外周部分に設置され処理槽本体13からオーバーフローする処理液Qを回収する外周溝15と、外周溝15の外周を囲んで筒状に上方に突出する覆い部17とを有している。処理槽本体13の底面中央には、処理液供給口21が設けられている。処理槽10の覆い部17には、覆い部17の内側壁から開口部11に向けて洗浄液(純水)をワンショットで噴射するリンス用ノズル23が取付けられている。   The processing tank 10 includes a container-shaped processing tank main body 13 that stores the processing liquid Q, an outer peripheral groove 15 that is installed in an upper end outer peripheral portion of the processing tank main body 13 and collects the processing liquid Q that overflows from the processing tank main body 13, and an outer peripheral groove The cover part 17 which surrounds the outer periphery of 15 and protrudes upwards in the shape of a cylinder is provided. A treatment liquid supply port 21 is provided at the center of the bottom surface of the treatment tank body 13. A rinsing nozzle 23 is attached to the cover portion 17 of the treatment tank 10 to inject the cleaning liquid (pure water) from the inner wall of the cover portion 17 toward the opening portion 11 in one shot.

処理液循環装置150は、処理槽10の外周溝15にオーバーフローした処理液Qを配管によって供給タンク151に戻し、供給タンク151内に溜まった処理液QをポンプPによって処理槽本体13の処理液供給口21に供給して処理液Qを循環させる。供給タンク151には、処理槽10内に供給する処理液Qの温度を所定温度に保つヒーター153が設置されている。   The treatment liquid circulation device 150 returns the treatment liquid Q overflowed to the outer peripheral groove 15 of the treatment tank 10 to the supply tank 151 by piping, and the treatment liquid Q accumulated in the supply tank 151 is treated by the pump P in the treatment tank main body 13. The treatment liquid Q is circulated by being supplied to the supply port 21. The supply tank 151 is provided with a heater 153 that keeps the temperature of the processing liquid Q supplied into the processing tank 10 at a predetermined temperature.

カバー40は、処理槽10の開口部11を塞ぐ大きさの板材によって構成されており、略円板状の上面部41と、上面部41の外周を囲む側面部43とを具備し、またその両側面には、板状のアーム部45が取付けられており、その先端近傍部分は、処理槽10の略中央両側部分に設置した軸支部47に回動自在に軸支され、アーム部45の先端は、駆動機構70の連結アーム75の先端に固定されている。駆動機構70は、カバー旋回用シリンダ71と、カバー旋回用シリンダ71内のピストンに連結されるロッド73と、ロッド73の先端に回動自在に連結される連結アーム75とを具備している。カバー旋回用シリンダ71の下端部は、固定側部材に回動自在に支承されている。   The cover 40 is made of a plate material having a size that closes the opening 11 of the treatment tank 10, and includes a substantially disk-shaped upper surface portion 41 and a side surface portion 43 that surrounds the outer periphery of the upper surface portion 41. Plate-like arm portions 45 are attached to both side surfaces, and portions near the tip thereof are pivotally supported by shaft support portions 47 installed on both sides of a substantially central portion of the processing tank 10. The tip is fixed to the tip of the connecting arm 75 of the drive mechanism 70. The drive mechanism 70 includes a cover turning cylinder 71, a rod 73 connected to a piston in the cover turning cylinder 71, and a connecting arm 75 rotatably connected to the tip of the rod 73. The lower end portion of the cover turning cylinder 71 is rotatably supported by the fixed member.

噴霧ノズル60は、カバー40の上面中央に取付けた一本の棒状の取付けブロック61に、一列に複数個(五個)のノズル63を上向きに取付けて構成されている。ノズル63からは、この実施の形態においては、洗浄液(純水)が真上方向に向けて噴霧される。
基板保持装置駆動機構130は、基板保持装置80全体を揺動させる揺動機構131と、基板保持装置80及び揺動機構131全体を旋回及び昇降させる旋回・昇降機構133とを具備している。
The spray nozzle 60 is configured by mounting a plurality of (five) nozzles 63 upward in a row on a single rod-shaped mounting block 61 mounted at the center of the upper surface of the cover 40. In this embodiment, the cleaning liquid (pure water) is sprayed from the nozzle 63 in the upward direction.
The substrate holding device driving mechanism 130 includes a swinging mechanism 131 that swings the entire substrate holding device 80 and a turning / lifting mechanism 133 that swings and lifts the entire substrate holding device 80 and the swinging mechanism 131.

次に、基板処理装置1の全体の動作を説明する。
図10に示す状態は、カバー40を旋回させ退避位置に移動させることで、処理槽10の開口部11を開き、且つ基板保持装置80を上昇させた状態を示している。このとき処理液循環装置150は駆動されており、めっき液等の処理液Qは、処理槽10と供給タンク151間を所定温度に維持されながら循環している。この状態で、先ず未処理の基板Wを、前述のようにして、基板保持装置80の吸着ヘッド84に吸着保持する。
Next, the overall operation of the substrate processing apparatus 1 will be described.
The state shown in FIG. 10 shows a state in which the opening 11 of the processing tank 10 is opened and the substrate holding device 80 is raised by turning the cover 40 and moving it to the retracted position. At this time, the processing liquid circulation device 150 is driven, and the processing liquid Q such as a plating solution is circulated between the processing tank 10 and the supply tank 151 while being maintained at a predetermined temperature. In this state, the unprocessed substrate W is first sucked and held on the suction head 84 of the substrate holding device 80 as described above.

次に、揺動機構131によって、基板保持装置80全体を揺動させて、基板Wを水平位置から所定角度傾斜させ、その状態のまま、旋回・昇降機構133によって基板保持装置80を図11に示す位置まで下降させて、基板Wを処理液Qにディップする。基板Wをディップした後、揺動機構131によって、基板保持装置80全体を元の位置に揺動させて基板Wを水平位置に戻し、この状態で無電解めっき等の処理を行う。この時、図2に示す基板回転用モータ121を駆動することで基板Wを回転させる。この基板処理装置1においては、基板Wを水平位置から所定角度傾斜した状態で処理液Q中にディップするので、基板Wを水平な状態にて処理液Qに浸した場合に比べ、基板Wの表面(被処理面)上に空気等の気体が混入することを防止できる。   Next, the substrate holding device 80 is swung by the swing mechanism 131 to tilt the substrate W by a predetermined angle from the horizontal position, and the substrate holding device 80 is moved to the state shown in FIG. The substrate W is lowered to the position shown, and the substrate W is dipped in the processing liquid Q. After dipping the substrate W, the entire substrate holding device 80 is swung to the original position by the swing mechanism 131 to return the substrate W to the horizontal position, and in this state, processing such as electroless plating is performed. At this time, the substrate W is rotated by driving the substrate rotating motor 121 shown in FIG. In this substrate processing apparatus 1, since the substrate W is dipped in the processing liquid Q in a state inclined by a predetermined angle from the horizontal position, the substrate W is compared with the case where the substrate W is immersed in the processing liquid Q in a horizontal state. It is possible to prevent gas such as air from being mixed on the surface (surface to be treated).

以上のようにして基板Wの表面の無電解めっき等の処理を所定時間行った後、旋回・昇降機構133を駆動して、基板保持装置80を図12に示す位置まで上昇させる。基板Wを上昇させている途中、処理槽10に設けたリンス用ノズル23から上昇中の基板Wの処理面に向けて洗浄液(純水)をワンショットで噴射する。例えば、無電解めっき処理が終了したら直ちに冷却しなければ、基板Wに残った処理液(めっき液)のQによって無電解めっきが進行してしまうからである。   After performing a process such as electroless plating on the surface of the substrate W for a predetermined time as described above, the turning / lifting mechanism 133 is driven to raise the substrate holding device 80 to the position shown in FIG. While the substrate W is being lifted, a cleaning liquid (pure water) is sprayed from the rinsing nozzle 23 provided in the processing tank 10 toward the processing surface of the rising substrate W in one shot. For example, if the cooling is not performed immediately after the electroless plating process is completed, the electroless plating proceeds due to the Q of the processing liquid (plating liquid) remaining on the substrate W.

次に、駆動機構70を駆動することでカバー40を旋回して、図12示すように、処理槽10の開口部11をカバー40で塞ぐ。即ちカバー40を、処理槽10の上部に位置して開口部11を塞ぐ閉止位置に移動させる。そして、カバー40上面に固定した噴霧ノズル60の各ノズル63から真上に向けて洗浄液を噴霧して基板Wの処理面に接液させて洗浄する。この時、処理槽10の開口部11はカバー40によって覆われているので、洗浄液が処理槽10内に入り込むことはなく、処理槽10内部の処理液Qが希釈されることはなく、処理液Qの循環使用が可能になる。なお基板Wを洗浄した後の洗浄液は、図示しない排水口から排水される。以上のようにして洗浄が終了した基板Wを、前述のように基板保持装置80から外部に取出し、次の未処理の基板Wを基板保持装置80に装着して、再び前記めっき等の処理及び洗浄工程を行う。   Next, the cover 40 is turned by driving the drive mechanism 70, and the opening 11 of the processing tank 10 is closed with the cover 40 as shown in FIG. 12. That is, the cover 40 is moved to the closed position that is located at the upper part of the processing tank 10 and closes the opening 11. Then, the cleaning liquid is sprayed from the nozzles 63 of the spray nozzle 60 fixed on the upper surface of the cover 40 toward the upper side to come into contact with the processing surface of the substrate W for cleaning. At this time, since the opening 11 of the processing tank 10 is covered with the cover 40, the cleaning liquid does not enter the processing tank 10, and the processing liquid Q inside the processing tank 10 is not diluted. Q can be recycled. The cleaning liquid after cleaning the substrate W is drained from a drain port (not shown). The substrate W that has been cleaned as described above is taken out from the substrate holding device 80 as described above, the next unprocessed substrate W is mounted on the substrate holding device 80, and the above-described processing such as plating is performed again. A cleaning process is performed.

なお上記実施の形態では、処理槽10に処理液Qを溜め、この処理液Qとして、例えばめっき液を使用することで、無電解めっき処理を行うようにした例を示しているが、処理槽10内にアノードを設置し、基板Wにカソード電極を接続するように構成することで、基板Wの表面(被処理面)を電解めっきすることもできる。またこの基板処理装置1をめっき装置として利用するのではなく、他の薬液処理(例えば、めっきの前処理や後処理)を行う基板処理装置として利用することもできる。また噴霧ノズル60によって行う基板Wの処理も、洗浄液による洗浄処理工程に限定されず、その他の各種薬液処理であっても良い。   In the above embodiment, the treatment liquid Q is stored in the treatment tank 10, and as the treatment liquid Q, for example, a plating liquid is used to perform the electroless plating treatment. The surface of the substrate W (surface to be treated) can be electrolytically plated by installing an anode in the substrate 10 and connecting the cathode electrode to the substrate W. Further, the substrate processing apparatus 1 can be used as a substrate processing apparatus that performs other chemical processing (for example, pre-processing and post-processing of plating) instead of using as a plating apparatus. Further, the processing of the substrate W performed by the spray nozzle 60 is not limited to the cleaning processing step using the cleaning liquid, and may be other various chemical processing.

図13は、上記実施の形態にかかる基板処理装置1を備えた基板処理システム(無電解めっき装置)の平面図である。同図に示すようにこの基板処理システムは、ロードアンロードエリア140と、洗浄エリア200と、めっき処理エリア300の3つの処理エリアを具備している。ロードアンロードエリア140には、2つのロードポート142、第1基板搬送ロボット144及び第1反転機146が設置されている。洗浄エリア200には、基板仮置台210、第2基板搬送ロボット230、前洗浄ユニット240、第2反転機250、洗浄ユニット260及び第1薬液供給ユニット900が設置されている。めっき処理エリア300には、第3基板搬送ロボット310、第1前処理ユニット320、第2前処理ユニット340、2つのめっき処理ユニット360、めっき液供給ユニット390及び第2薬液供給ユニット910とが設置されている。これらの薬液供給ユニット900,910は、薬液(原液)を使用する濃度に希釈して各装置に供給するユニットであり、第1薬液供給ユニット900は、洗浄エリア200内の前洗浄ユニット240及び洗浄ユニット260においてそれぞれ使用する薬液を供給し、第2薬液供給ユニット910は、めっき処理エリア300内の第1前処理ユニット320及び第2前処理ユニット340においてそれぞれ使用する薬液(前処理液)を供給する。   FIG. 13 is a plan view of a substrate processing system (electroless plating apparatus) including the substrate processing apparatus 1 according to the above embodiment. As shown in the figure, the substrate processing system includes three processing areas: a load / unload area 140, a cleaning area 200, and a plating processing area 300. In the load / unload area 140, two load ports 142, a first substrate transfer robot 144, and a first reversing machine 146 are installed. In the cleaning area 200, a temporary substrate mounting table 210, a second substrate transfer robot 230, a pre-cleaning unit 240, a second reversing machine 250, a cleaning unit 260, and a first chemical solution supply unit 900 are installed. In the plating processing area 300, a third substrate transfer robot 310, a first preprocessing unit 320, a second preprocessing unit 340, two plating processing units 360, a plating solution supply unit 390, and a second chemical solution supply unit 910 are installed. Has been. These chemical solution supply units 900 and 910 are units that dilute the chemical solution (stock solution) to a concentration to be used, and supply the diluted solution to each apparatus. The first chemical solution supply unit 900 includes the pre-cleaning unit 240 and the cleaning in the cleaning area 200. The chemical solution used in each unit 260 is supplied, and the second chemical solution supply unit 910 supplies the chemical solution (pretreatment liquid) used in each of the first pretreatment unit 320 and the second pretreatment unit 340 in the plating processing area 300. To do.

そして各めっき処理ユニット360として、上記実施の形態にかかる基板処理装置1が用いられている。なお処理槽10内に供給する処理液として前処理液を用いることで、第1前処理ユニット320,第2前処理ユニット340についても、上記実施の形態にかかる基板処理装置1を用いることができる。   And as each plating processing unit 360, the substrate processing apparatus 1 concerning the said embodiment is used. In addition, the substrate processing apparatus 1 concerning the said embodiment can be used also about the 1st pre-processing unit 320 and the 2nd pre-processing unit 340 by using a pre-processing liquid as a processing liquid supplied in the processing tank 10. FIG. .

基板処理システム全体の動作を説明する。
先ず、ロードポート142に装着された基板カセットから、第1基板搬送ロボット144によって基板Wを一枚取り出す。取り出された基板Wは、第1反転機146に渡されて反転されてその被処理面が下側にされた後、第1基板搬送ロボット144によって基板仮置台210に載置される。次に、この基板Wは、第2基板搬送ロボット230によって前洗浄ユニット240に搬送され、前洗浄ユニット240において前洗浄される(前洗浄処理プロセス)。前洗浄が完了した基板Wは、第3基板搬送ロボット310によって第1前処理ユニット320に移送される。そして第1前処理ユニット320に移送された基板Wは、第1前処理ユニット320において第1前処理及び洗浄が行われる(第1前処理プロセス)。
The overall operation of the substrate processing system will be described.
First, one substrate W is taken out from the substrate cassette mounted on the load port 142 by the first substrate transfer robot 144. The taken-out substrate W is transferred to the first reversing machine 146 and reversed so that the surface to be processed is placed on the lower side, and then placed on the temporary substrate placement table 210 by the first substrate transport robot 144. Next, the substrate W is transported to the pre-cleaning unit 240 by the second substrate transport robot 230 and pre-cleaned in the pre-cleaning unit 240 (pre-cleaning process). The substrate W that has been pre-cleaned is transferred to the first pretreatment unit 320 by the third substrate transfer robot 310. The substrate W transferred to the first pretreatment unit 320 is subjected to first pretreatment and cleaning in the first pretreatment unit 320 (first pretreatment process).

第1前処理が完了した基板Wは、第3基板搬送ロボット310によって第2前処理ユニット340に移送され、第2前処理ユニット340において第2前処理及び洗浄が行われる(第2前処理プロセス)。第2前処理が完了した基板Wは、第3基板搬送ロボット310によってめっき処理ユニット360に移送され、めっき処理及び洗浄される。めっき処理が完了した基板Wは、第3基板搬送ロボット310によって、第2反転機250に移送されて反転された後、第2基板搬送ロボット230によって、後洗浄ユニット260の第1洗浄部270に移送され、洗浄された後、第2基板搬送ロボット230によって、第2洗浄乾燥部290に移送されて洗浄・乾燥される。   The substrate W for which the first pretreatment is completed is transferred to the second pretreatment unit 340 by the third substrate transfer robot 310, and the second pretreatment unit 340 performs the second pretreatment and the cleaning (second pretreatment process). ). The substrate W for which the second pretreatment has been completed is transferred to the plating unit 360 by the third substrate transfer robot 310, and is subjected to plating and cleaning. After the plating process is completed, the substrate W is transferred to the second reversing machine 250 by the third substrate transport robot 310 and reversed, and then is transferred to the first cleaning unit 270 of the post-cleaning unit 260 by the second substrate transport robot 230. After being transferred and cleaned, it is transferred to the second cleaning / drying unit 290 by the second substrate transfer robot 230 to be cleaned and dried.

そしてこの洗浄・乾燥が完了した基板Wは、第2基板搬送ロボット230によって基板仮置台210に仮置きされた後、第1基板搬送ロボット144によってロードポート142に装着された基板カセットに収納される。
なお、本発明にかかる基板保持装置80を適用できる基板処理装置や基板処理システムは、前記図10や図13に示す構造の基板処理装置や基板処理システムに限定されず、他の各種構造の基板処理装置や基板処理システムであってもよい。
The substrate W that has been cleaned and dried is temporarily placed on the temporary substrate placement table 210 by the second substrate transport robot 230 and then stored in the substrate cassette mounted on the load port 142 by the first substrate transport robot 144. .
The substrate processing apparatus and the substrate processing system to which the substrate holding device 80 according to the present invention can be applied are not limited to the substrate processing apparatus and the substrate processing system having the structure shown in FIG. 10 and FIG. It may be a processing apparatus or a substrate processing system.

半導体基板の要部拡大断面図である。It is a principal part expanded sectional view of a semiconductor substrate. 本発明の実施の形態に係る基板保持装置を示す縦断正面図である。It is a vertical front view which shows the board | substrate holding | maintenance apparatus which concerns on embodiment of this invention. 図2に示す基板保持装置の吸着ヘッドの要部拡大断面図である。It is a principal part expanded sectional view of the adsorption head of the substrate holding device shown in FIG. 図2に示す基板保持装置の基板押え部の一部を切除して示す斜視図である。FIG. 3 is a perspective view showing a part of a substrate pressing portion of the substrate holding device shown in FIG. 基板押え部の連結部の分解斜視図である。It is a disassembled perspective view of the connection part of a substrate pressing part. 基板押え部の押圧機構の分解斜視図である。It is a disassembled perspective view of the pressing mechanism of a substrate pressing part. 基板押え部の押圧機構を吸着ヘッドの吸着シールと共に示す要部拡大断面図である。It is a principal part expanded sectional view which shows the press mechanism of a board | substrate press part with the suction seal of a suction head. 基板保持装置の基板を吸着シールで吸着保持する際の状態(基板吸着位置)の要部を示す図である。It is a figure which shows the principal part of the state (board | substrate adsorption | suction position) at the time of carrying out the adsorption | suction holding of the board | substrate of a board | substrate holding apparatus with a suction seal. 基板保持装置の基板を吸着シールで吸着保持し、更に基板押え部を下降させた時の状態(基板処理位置)の要部を示す図である。It is a figure which shows the principal part of the state (substrate processing position) when the board | substrate of a board | substrate holding apparatus is adsorbed-held with an adsorption | suction seal | sticker, and also the substrate holding part was lowered | hung. (a)は、基板保持装置を用いて構成された基板処理装置の処理前の状態を示す側面図で、(b)は、(a)の概略側断面図である。(A) is a side view which shows the state before the process of the substrate processing apparatus comprised using the substrate holding apparatus, (b) is a schematic sectional side view of (a). (a)は、基板保持装置を用いて構成された基板処理装置の処理液による処理状態を示す側面図で、(b)は、(a)の概略側断面図である。(A) is a side view which shows the process state by the process liquid of the substrate processing apparatus comprised using the substrate holding apparatus, (b) is a schematic sectional side view of (a). (a)は、基板保持装置を用いて構成された基板処理装置で基板を洗浄する直前の状態を示す側面図で、(b)は、(a)の概略側断面図である。(A) is a side view which shows the state just before wash | cleaning a board | substrate with the substrate processing apparatus comprised using the substrate holding apparatus, (b) is a schematic sectional side view of (a). 基板処理装置を備えた基板処理システムを示す平面図である。It is a top view which shows the substrate processing system provided with the substrate processing apparatus.

符号の説明Explanation of symbols

1 基板処理装置
10 処理槽
11 開口部
13 処理槽本体
40 カバー
60 噴霧ノズル
70 駆動機構
80 基板保持装置
81 基板ヘッド
82 基板押え部
84 吸着ヘッド
86 真空供給ライン
88 支持体
90 吸着シール
92 プッシャ
94 通気部
96 基板吸着溝
100 ケース
104 プッシャ本体
112 押圧部
120 基板ヘッド駆動部
121 基板回転用モータ
123 部駆動用シリンダ
130 基板保持装置駆動機構
131 揺動機構
133 旋回・昇降機構
150 処理液循環装置
160 基部
162 基板支持部
163 連結部
164 押圧機構
174 固定リング
186 弾性体(圧縮コイルばね)
190 可動爪
192 枢軸
196 カバー
198 弾性体(ゴム)
401,403,405 搬送部
411,413 乾燥部
415,417 洗浄部
419,421,423,425,427 基板前処理装置
429,431 無電解めっき装置
DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 10 Processing tank 11 Opening part 13 Processing tank main body 40 Cover 60 Spray nozzle 70 Drive mechanism 80 Substrate holding device 81 Substrate head 82 Substrate pressing part 84 Adsorption head 86 Vacuum supply line 88 Support body 90 Adsorption seal 92 Pusher 94 Ventilation Unit 96 Substrate suction groove 100 Case 104 Pusher body 112 Press unit 120 Substrate head drive unit 121 Substrate rotation motor 123 Unit drive cylinder 130 Substrate holding device drive mechanism 131 Oscillating mechanism 133 Swing / lifting mechanism 150 Processing liquid circulation device 160 Base 162 Substrate support part 163 Connection part 164 Pressing mechanism 174 Fixing ring 186 Elastic body (compression coil spring)
190 Movable Claw 192 Axis 196 Cover 198 Elastic Body (Rubber)
401, 403, 405 Transport unit 411, 413 Drying unit 415, 417 Cleaning unit 419, 421, 423, 425, 427 Substrate pretreatment apparatus 429, 431 Electroless plating apparatus

Claims (10)

表面を下向きにして基板を支持する基板押え部と、
前記基板押え部で支持した基板の裏面周縁部をリング状にシールしながら吸着して基板を保持する吸着シールを備えた吸着ヘッドとを有し、
前記基板押え部には、該基板押え部の前記吸着ヘッドに向けた相対的な移動に伴って、該基板押え部で支持した基板の表面周縁部に当接して該基板を前記吸着ヘッドに向けて押圧する可動爪を有する複数の押圧機構が円周方向に沿った位置に設けられ、
前記可動爪は、枢軸を介して鉛直方向に回転自在に支承されて前記基板押え部の直径方向に沿った位置に配置され、この枢軸を挟んだ外周側で弾性体を介して下方に付勢され、内周側で基板の表面周縁部に接触するように構成されていることを特徴とする基板保持装置。
A substrate pressing portion that supports the substrate with the surface facing downward,
A suction head provided with a suction seal that holds the substrate by sucking while sealing the back surface periphery of the substrate supported by the substrate pressing portion in a ring shape;
The substrate pressing portion comes into contact with the peripheral edge of the surface of the substrate supported by the substrate pressing portion with the relative movement of the substrate pressing portion toward the suction head, and directs the substrate toward the suction head. a plurality of pressing mechanism having a movable pawl for pressing Te is found provided at a position along the circumferential direction,
The movable claw is rotatably supported in a vertical direction via a pivot and is disposed at a position along the diameter direction of the substrate pressing portion, and is biased downward via an elastic body on the outer peripheral side across the pivot. And a substrate holding device, wherein the substrate holding device is configured to come into contact with the peripheral edge of the surface of the substrate on the inner peripheral side .
前記弾性体は、略円錐台状のゴムからなることを特徴とする請求項記載の基板保持装置。 The elastic body, the substrate holding apparatus according to claim 1, characterized in that it consists substantially frustoconical rubber. 表面を下向きにして基板を支持する基板押え部と、
前記基板押え部で支持した基板の裏面周縁部をリング状にシールしながら吸着して基板を保持する吸着シールを備えた吸着ヘッドとを有し、
前記基板押え部は、基部と、該基部と所定間隔離間させて配置され、周縁部に備えられた連結部を介して傾動自在に連結されて基板を支持する基板支持部とを有することを特徴とする基板保持装置。
A substrate pressing portion that supports the substrate with the surface facing downward,
A suction head provided with a suction seal that holds the substrate by sucking while sealing the back surface peripheral edge of the substrate supported by the substrate pressing portion in a ring shape;
The substrate holding portion includes a base portion and a substrate support portion that is disposed at a predetermined distance from the base portion and is tiltably connected via a connecting portion provided at a peripheral edge portion to support the substrate. A substrate holding device.
前記連結部は、前記基部側部材と前記基板支持部側部材を弾性的に連結する弾性体を有することを特徴とする請求項記載の基板保持装置。 4. The substrate holding apparatus according to claim 3 , wherein the connecting portion includes an elastic body that elastically connects the base side member and the substrate support side member. 前記弾性体は、圧縮コイルばねからなることを特徴とする請求項記載の基板保持装置。 The substrate holding apparatus according to claim 4 , wherein the elastic body includes a compression coil spring. 表面を下向きにして基板押え部で基板を支持し、
この基板を支持した基板押え部をリング状に連続して延びる吸着シール部に向けて相対的に移動させ、
枢軸を介して鉛直方向に回転自在に支承されて前記基板押え部の直径方向に沿った位置に配置され、この枢軸を挟んだ外周側で弾性体を介して下方に付勢され、内周側で基板の表面周縁部に接触するように構成されている複数の可動爪を、前記基板押え部の移動に伴って、前記基板板押え部で支持した基板の表面周縁部に当接させ、該基板を前記吸着シール部に向けて押圧して該基板の裏面周縁部を前記吸着シール部に密着させ、
前記吸着シール部を吸引して基板を保持することを特徴とする基板保持方法。
Support the substrate with the substrate holder with the surface facing down,
Move the substrate holding portion supporting this substrate relatively toward the suction seal portion that continuously extends in a ring shape,
It is rotatably supported in the vertical direction via a pivot and is arranged at a position along the diameter direction of the substrate holder, and is urged downward via an elastic body on the outer circumference side across this pivot, and the inner circumference side A plurality of movable claws configured to come into contact with the surface peripheral portion of the substrate in contact with the surface peripheral portion of the substrate supported by the substrate plate pressing portion in accordance with the movement of the substrate pressing portion; the substrate is pressed toward the suction seal portion is adhered to the back side rim portion of the substrate to the suction seal portion,
A substrate holding method, wherein the suction seal portion is sucked to hold the substrate.
基部と所定間隔離間させて配置され、周縁部に備えられた連結部を介して傾動自在に連結されて基板を支持する基板押え部の基板支持部で表面を下向きにして基板を支持し、
この基板を前記基板支持部で支持した前記基板押え部をリング状に連続して延びる吸着シール部に向けて移動させ該移動に伴って、前記基板支持部で支持した基板を前記連結部を介して傾動させて基板の裏面周縁部を前記吸着シール部に密着させ、
前記吸着シール部を吸引して基板を保持することを特徴とする基板保持方法。
Supporting the substrate with the surface facing downward at the substrate support portion of the substrate pressing portion that is disposed at a predetermined distance from the base portion and is tiltably connected via a connecting portion provided at the peripheral portion to support the substrate ,
The substrate holding portion of the substrate supported by the substrate supporting portion is moved toward the suction sealing portion extending continuously in a ring shape, with the said moving, a substrate supported by the substrate supporting portion of the connecting portion through is tilted brought into close contact with the back side rim portion of the substrate to the suction seal portion,
A substrate holding method, wherein the suction seal portion is sucked to hold the substrate.
基板を保持する基板保持装置と、
前記基板保持装置で保持した基板の表面を内部に溜めた処理液に接触させる処理槽とを有し、
前記基板保持装置は、
表面を下向きにして基板を支持する基板押え部と、
前記基板押え部で支持した基板の裏面周縁部をリング状にシールしながら吸着して基板を保持する吸着シールを備えた吸着ヘッドとを有し、
前記基板押え部には、該基板押え部の前記吸着ヘッドに向けた相対的な移動に伴って、該基板押え部で支持した基板の表面周縁部に当接して該基板を前記吸着ヘッドに向けて押圧する可動爪を有する複数の押圧機構が円周方向に沿った位置に設けられ、
前記可動爪は、枢軸を介して鉛直方向に回転自在に支承されて前記基板押え部の直径方向に沿った位置に配置され、この枢軸を挟んだ外周側で弾性体を介して下方に付勢され、内周側で基板の表面周縁部に接触するように構成されていることを特徴とする基板処理装置。
A substrate holding device for holding the substrate;
A treatment tank for bringing the surface of the substrate held by the substrate holding device into contact with the treatment liquid stored inside,
The substrate holding device is
A substrate pressing portion that supports the substrate with the surface facing downward,
A suction head provided with a suction seal that holds the substrate by sucking while sealing the back surface periphery of the substrate supported by the substrate pressing portion in a ring shape;
The substrate pressing portion comes into contact with the peripheral edge of the surface of the substrate supported by the substrate pressing portion with the relative movement of the substrate pressing portion toward the suction head, and directs the substrate toward the suction head. a plurality of pressing mechanism having a movable pawl for pressing Te is found provided at a position along the circumferential direction,
The movable claw is rotatably supported in a vertical direction via a pivot and is disposed at a position along the diameter direction of the substrate pressing portion, and is biased downward via an elastic body on the outer peripheral side across the pivot. And a substrate processing apparatus, wherein the substrate processing apparatus is configured to come into contact with the peripheral edge of the surface of the substrate on the inner peripheral side .
基板を保持する基板保持装置と、
前記基板保持装置で保持した基板の表面を内部に溜めた処理液に接触させる処理槽とを有し、
前記基板保持装置は、
表面を下向きにして基板を支持する基板押え部と、
前記基板押え部で支持した基板の裏面周縁部をリング状にシールしながら吸着して基板を保持する吸着シールを備えた吸着ヘッドとを有し、
前記基板押え部は、基部と、該基部と所定間隔離間させて配置され、周縁部に備えられた連結部を介して傾動自在に連結されて基板を支持する基板支持部とを有することを特徴とする基板処理装置。
A substrate holding device for holding the substrate;
A treatment tank for bringing the surface of the substrate held by the substrate holding device into contact with the treatment liquid stored inside,
The substrate holding device is
A substrate pressing portion that supports the substrate with the surface facing downward,
A suction head provided with a suction seal that holds the substrate by sucking while sealing the back surface peripheral edge of the substrate supported by the substrate pressing portion in a ring shape;
The substrate pressing portion includes a base portion and a substrate support portion that is disposed at a predetermined distance from the base portion and is tiltably connected via a connecting portion provided at a peripheral edge portion to support the substrate. A substrate processing apparatus.
前記処理液による基板の表面の処理は、無電解めっき処理であることを特徴とする請求項8または9記載の基板処理装置。 The substrate processing apparatus according to claim 8, wherein the treatment of the surface of the substrate with the treatment liquid is an electroless plating treatment.
JP2003432480A 2003-12-25 2003-12-26 Substrate holding device, substrate holding method, and substrate processing apparatus Expired - Fee Related JP4463543B2 (en)

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JP2003432480A JP4463543B2 (en) 2003-12-26 2003-12-26 Substrate holding device, substrate holding method, and substrate processing apparatus
US10/578,100 US7886685B2 (en) 2003-12-25 2004-12-22 Substrate holding apparatus, substrate holding method, and substrate processing apparatus
PCT/JP2004/019681 WO2005064642A1 (en) 2003-12-25 2004-12-22 Substrate holding apparatus, substrate holding method, and substrate processing apparatus
EP04808032A EP1697967A1 (en) 2003-12-25 2004-12-22 Substrate holding apparatus, substrate holding method, and substrate processing apparatus
TW093140194A TWI368671B (en) 2003-12-25 2004-12-23 Substrate holding apparatus, substrate holding method, and substrate processing apparatus
KR1020067012728A KR101076820B1 (en) 2003-12-25 2006-06-23 Substrate holding apparatus substrate holding method and substrate processing apparatus
US12/983,474 US8141513B2 (en) 2003-12-25 2011-01-03 Substrate holding apparatus, substrate holding method, and substrate processing apparatus
US13/398,216 US8777198B2 (en) 2003-12-25 2012-02-16 Substrate holding apparatus, substrate holding method, and substrate processing apparatus

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