JP4463776B2 - Mask for X-ray lithography, method for producing the same, method for producing an antireflection structure using the same, method for producing a mold for producing an optical element having an antireflection structure, and glass having an antireflection structure Manufacturing method of molded article or resin molded article - Google Patents

Description

  The present invention relates to a mask for X-ray lithography, a method for manufacturing the mask for X-ray lithography, a method for manufacturing an antireflection structure using the mask for X-ray lithography, and a mold using the antireflection structure. The present invention relates to a method for producing a glass molding or a resin molding. Specifically, the X-ray lithography mask according to the present invention is for manufacturing an antireflection structure by X-ray lithography.

  In recent years, various optical elements have been proposed in which light reflection prevention treatment for suppressing light reflection is performed on the surface. As the antireflection treatment, for example, a film having a relatively low refractive index (low refractive index film), or a low refractive index film and a film having a relatively high refractive index (high refractive index film) are alternately laminated. A treatment for forming a light reflection preventing film made of a multilayer film or the like on the surface is mentioned (for example, Patent Document 1). In general, such an antireflection film made of a low refractive index film or a multilayer film is formed by a vapor deposition method, a sputtering method, or the like.

  However, the process of forming an antireflection film using a vapor deposition method or a sputtering method is complicated. For this reason, the light reflection preventing film has problems that productivity is low and production cost is high.

  Further, such an antireflection film has a problem that the wavelength dependency is large. Specifically, although it has a high antireflection function for light of a predetermined wavelength (design wavelength), there is a problem that it does not have a sufficient antireflection function for light of other wavelengths. . For this reason, it is difficult to realize an antireflection effect over the entire visible wavelength range required in an imaging optical system or the like with an antireflection film made of a low refractive index film or a multilayer film.

  Furthermore, although the light reflection preventing film made of a low refractive index film or a multilayer film has a relatively high light reflection preventing effect for vertically incident light, the light reflection preventing effect is reduced when the incident angle is increased. Incident angle dependence. That is, there is a problem that a sufficient light reflection preventing effect cannot be obtained for light having a large incident angle.

  In view of such a problem, for example, a light reflection preventing structure (hereinafter, sometimes referred to as “light reflection preventing uneven structure”) composed of a plurality of conical projections arranged at a submicron pitch has been proposed. Yes. In the optical element having this light reflection preventing concavo-convex structure, a rapid change in refractive index at the optical element interface is suppressed. That is, the refractive index gradually changes in the light reflection preventing concavo-convex structure. For this reason, light reflection on the surface of the optical element is reduced, and a high light incidence rate into the optical element can be realized. According to this light reflection preventing concavo-convex structure, reflection of light having a wavelength equal to or greater than the pitch between the cone-shaped protrusions can be suppressed. Moreover, the light reflection preventing concavo-convex structure has a relatively high reflection suppressing effect even for light having a large incident angle. That is, the light reflection preventing uneven structure has a small wavelength dependency and a small incident angle dependency. Therefore, by using this light reflection preventing concavo-convex structure, an optical element, an optical system, and the like having a high light reflection preventing effect in a wide wavelength range can be realized.

As a method for forming the light reflection preventing concavo-convex structure, for example, a method using an X-ray lithography technique has been proposed. Since X-rays have a short wavelength and excellent straightness, X-ray lithography is suitable for processing a fine structure of submicron level, which has been difficult to process conventionally. For example, Patent Documents 2, 3 and the like disclose a technique for processing a fine structure using an X-ray lithography technique.
Japanese Patent No. 2656634 JP 2000-035500 A Japanese Patent No. 3521205

  In the technique of X-ray lithography described in Patent Documents 2 and 3, etc., X-rays are usually exposed at this magnification. For this reason, a full-size mask is required for the X-ray exposure process. That is, an X-ray mask in which a pattern having the same shape and dimension as the light reflection preventing uneven structure to be processed is required. For this reason, for example, in order to produce a light reflection preventing concavo-convex structure capable of suppressing the reflection of visible light, an X-ray mask having a fine pattern of submicron size below the wavelength of visible light must be produced.

  An example of a method for manufacturing an X-ray mask having a fine pattern of submicron size is an electron beam (EB) drawing method. However, in order to fabricate a conventional X-ray mask having a fine pattern of a submicron size by an electron beam (EB) drawing method, there is a problem that a long fabrication period and a large cost are required. Therefore, when an X-ray mask having a conventional sub-micron size pattern is used, there is a problem that the cost for creating the light reflection preventing concavo-convex structure is increased. Specifically, the processing time becomes longer as the area of the X-ray mask of the sub-micron size pattern is larger. For example, if an attempt is made to draw a pattern on an area of 50 mm square by EB, it takes about 500 hours. It will be.

  As described above, the conventional X-ray lithography mask is expensive to manufacture and requires a long production time. Therefore, it is possible to easily and inexpensively form the light reflection preventing concavo-convex structure using the conventional X-ray lithography mask. There is a problem that is difficult.

  The present invention has been made in view of the above points, and an object of the present invention is to provide a mask for X-ray lithography that can be manufactured inexpensively and easily.

  The mask for X-ray lithography according to the present invention is for manufacturing an antireflection structure having an antireflection structure by X-ray lithography. The light reflection preventing structure is composed of a concavo-convex structure having a plurality of surfaces inclined with respect to the surface direction, and suppresses reflection of light having a wavelength of a predetermined wavelength or more. An X-ray lithography mask according to the present invention includes a transmissive substrate that transmits X-rays, and an X-ray shielding layer that includes a plurality of granular materials that shield X-rays disposed along the plate surface direction on the transmissive substrate. It has. The plurality of granules are arranged at a pitch equal to or less than the wavelength of light whose reflection is suppressed by the light reflection preventing structure.

  In the present specification, the “light reflection preventing structure” means a structure that reduces the light reflectance, and completely prevents light reflection (that is, the light reflectance is 0%). It is not limited to. In the present specification, “transmitting X-rays” is not limited to transmitting X-rays with a transmittance of 100%.

  “Pitch” refers to the center-to-center distance in plan view. For example, the pitch between the granular materials refers to the distance between the centers of adjacent granular materials in a plan view.

  The “granular body” may be spherical, hemispherical, or polyhedral.

  In the present specification, the “substrate” may be in the form of a sheet or film.

  The X-ray lithography mask manufacturing method according to the present invention is for manufacturing the X-ray lithography mask according to the present invention. That is, it is used when manufacturing a structure having an anti-reflection structure that has a concavo-convex structure having a plurality of surfaces inclined with respect to the surface direction and suppresses reflection of light having a wavelength of a predetermined wavelength or more by X-ray lithography. For producing a mask for X-ray lithography.

  The method for manufacturing a mask for X-ray lithography according to the present invention includes a step of preparing a transmissive substrate that transmits X-rays, and an arrangement in which a plurality of granular materials that shield X-rays are disposed on the transmissive substrate along the plate surface direction. Process. In the manufacturing method, the plurality of granular materials are arranged at a pitch equal to or less than the wavelength of light whose reflection is suppressed by the light reflection preventing structure.

  The manufacturing method (first, second, and third manufacturing methods) of the light reflection preventing structure according to the present invention is performed using the X-ray lithography mask according to the present invention. That is, a transmissive substrate that transmits X-rays and a plurality of particles that shield X-rays disposed along the plate surface direction at a pitch equal to or less than the wavelength of light on which reflection is suppressed by the light reflection preventing structure on the transmissive substrate. This is performed using an X-ray lithography mask provided with a body X-ray shielding layer.

  The first method of manufacturing the light reflection preventing structure according to the present invention includes a step of forming an X-ray photosensitive film substantially made of an X-ray photosensitive material on a structure forming substrate, and an X-ray photosensitive film is formed. A step of disposing an X-ray lithography mask above the structure forming substrate so that the X-ray shielding layer faces the structure forming substrate, and the X-ray photosensitive film via the X-ray lithography mask. A process of patterning the X-ray photosensitive film into a predetermined pattern by developing after irradiation with rays, and etching the structure forming substrate from above the patterned X-ray photosensitive film to prevent light reflection on the structure forming substrate Forming a structure.

  In the second method of manufacturing the light reflection preventing structure according to the present invention, the X-ray shielding layer is opposed to the structure forming substrate above the structure forming substrate substantially made of the X-ray photosensitive material. A step of disposing an X-ray lithography mask; and a step of forming an antireflection structure on the structure forming substrate by irradiating the structure forming substrate with X-rays through the X-ray lithography mask and developing the X-ray lithography mask. It has.

  A third method for manufacturing a light reflection preventing structure according to the present invention includes a step of forming an etching mask film on a structure forming substrate, and an X-ray substantially consisting of an X-ray photosensitive material on the etching mask film. A step of forming a photosensitive film, and a step of arranging an X-ray lithography mask above the structure forming substrate on which the X-ray photosensitive film is formed so that the X-ray shielding layer faces the structure forming substrate. Patterning the X-ray photosensitive film into a predetermined pattern by irradiating the X-ray photosensitive film with X-ray lithography through an X-ray lithography mask and developing the etching mask film from above the patterned X-ray photosensitive film And patterning the etching mask film into a predetermined pattern and etching the structure forming substrate from above the patterned etching mask film to form a structure And a step of forming a light reflection prevention structure to use substrate.

According to the present invention, a method of manufacturing the mold for manufacturing an optical element having an antireflection structure comprises the steps of producing a Rihikari antireflection structure by the manufacturing method of the optical anti-reflection structure according to the present invention Is included .

  In the method for producing a mold according to the present invention, a light reflection preventing structure is immersed in an electrolytic solution containing metal ions, and the metal ions are adhered and deposited on the light reflection preventing structure. A step of forming, and a step of separating a formed object made of metal from the light reflection preventing structure to form a molding die.

According to the present invention, a manufacturing method of a glass the molded product having a light anti-reflection structure is one that comprises a step of manufacturing a Rihikari antireflection structure by the manufacturing method of the optical anti-reflection structure according to the present invention .

  The method for producing a glass molding according to the present invention is characterized in that a glass molding is obtained by press-molding a glass material heated to a predetermined temperature with a light reflection preventing structure of a light reflection preventing structure. .

According to the present invention, method for producing a resin to be molded having a light anti-reflection structure is one that comprises a step of manufacturing a Rihikari antireflection structure by the manufacturing method of the optical anti-reflection structure according to the present invention .

  The method for producing a resin molding according to the present invention includes a step of preparing a mold body including a cavity into which a light reflection preventing structure is fitted and inserted, and an opening communicating with the cavity, and light reflection prevention. The step of fitting and inserting the light reflection preventing structure into the cavity, the step of injecting and filling the resin into the cavity from the opening, and the resin injected in the cavity are solidified so that the structure is exposed. And a step of obtaining a resin molding by transferring the light reflection preventing structure.

  Since the mask for X-ray lithography according to the present invention can be manufactured inexpensively and easily, a structure having a light reflection preventing structure can be manufactured at low cost.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

(Embodiment 1)
FIG. 1 is a cross-sectional view of an X-ray lithography mask 1 according to the first embodiment.

  FIG. 2 is a cross-sectional view of the X-ray shielding granular material 11.

  FIG. 3 is an enlarged partial sectional view of a part of the X-ray lithography mask 1.

  First, the X-ray lithography mask 1 according to the first embodiment will be described in detail with reference to FIGS. 1 to 3.

  As shown in FIG. 1, the X-ray lithography mask 1 according to the first embodiment includes a first substrate (transmission substrate) 10, an X-ray shielding layer 2, and a second substrate 12. The second substrate 12 is made of an X-ray shielding material (for example, silicon) that shields X-rays. Specifically, the second substrate 12 can be formed of, for example, a silicon wafer having a diameter of 10.16 cm (4 inches) and a thickness of 2 mm. The second substrate 12 has a function of holding the first substrate 10 and the X-ray shielding layer 2 and a function of shielding unnecessary X-rays. An opening 12 a for transmitting X-rays is formed at the center of the second substrate 12. The shape dimension of the opening 12a can be appropriately selected and determined according to the shape dimension of the object to be X-ray exposed.

The first substrate 10 is formed on the second substrate 12 so as to cover the opening 12a. The first substrate 10 is made of a material that transmits X-rays. Examples of the material that transmits X-rays include SiC and Si ₃ N ₄ . Specifically, the first substrate 10 can be constituted by, for example, a SiC membrane or the like. The first substrate 10 only needs to transmit X-rays with a certain degree of transmittance (for example, a transmittance of 50% or more), and may not transmit X-rays with a transmittance of 100%. Good.

  The thickness of the first substrate 10 is not particularly limited, and the first substrate 10 may be a plate shape, a sheet shape, a film shape, or the like. For example, the thickness of the first substrate 10 can be 1 μm.

  The X-ray shielding layer 2 is formed on the first substrate 10. The X-ray shielding layer 2 is composed of a plurality of X-ray shielding granules 11 arranged on the first substrate 10 along the plate surface direction. The X-ray shielding granular material 11 has a function of shielding X-rays.

  Note that the X-ray shielding granular material 11 may be, for example, a granular material (particle) containing an X-ray shielding material (preferably substantially made of an X-ray shielding material). As shown in FIG. 2, the X-ray shielding granular material 11 may include, for example, a spherical granular body 11a and an X-ray shielding film 11b. The X-ray shielding film 11b includes an X-ray shielding material that shields X-rays, and is formed so as to cover the surface of the granular body 11a. Examples of the X-ray shielding material include gold, tantalum, nickel, copper, silver, and chromium. The granular body 11a is substantially made of, for example, silicon oxide, polyolefin resin, polystyrene resin, polyester resin, acrylic resin, polyamide resin, polycarbonate resin, carbon, aluminum, phosphorus, titanium, zirconium. And one or more materials selected from the group consisting of yttrium and yttrium. Specifically, examples of the polyolefin-based resin include polyethylene (PE). Examples of the polystyrene resin include polystyrene and acrylic-styrene (AS). Examples of the polyester resin include polyethylene terephthalate (PET).

  In addition, the particle size (specifically, the average particle size) of the X-ray shielding granular material 11 can be appropriately selected and determined according to the desired pitch (set pitch, i.e., reflection suppression wavelength) of the light reflection preventing uneven structure. it can. For example, the particle size of the X-ray shielding granular material 11 can be made substantially the same as or less than the set pitch (reflection suppression wavelength) of the light reflection preventing concavo-convex structure. Specifically, in the case of forming a light reflection preventing concavo-convex structure that suppresses reflection of visible light (light having a wavelength of 400 nm to 700 nm), the particle size of the X-ray shielding granular material 11 is set to the size of the light that is to suppress reflection. The minimum wavelength (reflection suppression wavelength), that is, 300 nm or less can be set.

  In the first embodiment, the average particle diameter (specifically, the average particle diameter in plan view) t of the X-ray shielding granular material 11 is determined by the light reflection preventing concavo-convex structure formed using the X-ray lithography mask 1. The wavelength of light at which reflection is suppressed (specifically, the wavelength of light having the shortest wavelength among the light at which reflection is suppressed; hereinafter, sometimes referred to as “reflection suppression wavelength”), and X The line shielding granules 11 are arranged at a pitch P1 (pitch: distance between the centers C of the X-ray shielding granules 11) that is equal to or less than the reflection suppression wavelength.

  For this reason, as shown in FIG. 3, among the X-rays perpendicularly incident on the X-ray lithography mask 1, X incident on an area relatively close to the center of the X-ray shielding granular material 11 (non-transmission area: NTR). The line is shielded (eg, absorbed and / or reflected) by the X-ray shielding granules 11. On the other hand, the X-rays incident between the X-ray shielding granules 11 and the peripheral region (transmission region: TR) of the X-ray shielding granules 11 are not so much shielded by the X-ray shielding granules 11 and have a relatively high transmission. The X-ray lithography mask 1 is transmitted at a rate. That is, in the X-ray lithography mask 1 according to the first embodiment, the X-ray transmission regions TR are also arranged at a pitch equal to or smaller than the reflection suppression wavelength with the non-transmission region NTR interposed between the transmission regions TR. Therefore, by using the X-ray lithography mask 1 according to the first embodiment, a structure having a light reflection preventing concavo-convex structure composed of a fine concavo-convex structure can be suitably manufactured as will be described in detail later.

  Next, a method for manufacturing the X-ray lithography mask 1 according to the first embodiment will be described in detail with reference to FIGS.

  FIG. 4 is a flowchart showing a manufacturing process of the X-ray lithography mask 1.

  5 to 10 are cross-sectional views showing the manufacturing process of the X-ray lithography mask 1. Specifically, FIGS. 5 to 7 are diagrams showing a process of manufacturing the X-ray shielding granular material 11. More specifically, FIG. 5 is a diagram showing a process of dropping ammonia. FIG. 6 is a diagram illustrating a process of forming the granular body 11a. FIG. 7 is a diagram illustrating a process of coating the surface of the granular body 11a with the X-ray shielding film 11b. FIG. 8 is a cross-sectional view illustrating a process of forming the first substrate 10. FIG. 9 is a cross-sectional view showing the step of applying the granular material dispersion 15. FIG. 10 is a cross-sectional view showing the process of removing the liquid 13.

  First, for example, a first substrate 10 that transmits X-rays made of SiC membrane or the like is formed on a substrate 12b containing an X-ray shielding material such as a silicon wafer (see step 1 and FIG. 8). The formation of the first substrate 10 can be performed by, for example, a sputtering method or the like.

Moreover, the X-ray shielding granular material 11 is produced (step 2). The X-ray shielding granular material 11 can be formed, for example, by coating a granular material main body 11a formed using the Stober method with an X-ray shielding film 11b. Specifically, as shown in FIG. 5, ammonia water is added to a mixed solution 3 of tetraethoxysilane (TEOS), ethanol, and pure water while stirring to prepare a sol solution. The sol solution preferably has a pH of about 11, for example. The sol solution is further stirred for several hours (for example, 2 hours) to form a granular body 11a substantially made of SiO ₂ as shown in FIG. The formed granular body 11a is taken out from the mixed liquid 3, and dried and fired at about 500 ° C., for example. The fired granular body 11a is immersed in a solution containing metal ions (for example, a solution containing gold chloride as a main component) 4 to form an X-ray shielding film 11b on the surface of the granular body 11a, thereby shielding X-rays. The granular material 11 can be completed.

  The obtained X-ray shielding granular material 11 is dispersed and mixed in the liquid 13 to prepare a granular material dispersion 15 (step 3). Examples of the liquid 13 include organic solvents such as alcohol, ether, and ketone, and water.

  Next, the particulate dispersion liquid 15 is applied onto the first substrate 10 by, for example, spraying to form a film of the particulate dispersion liquid 15 on the first substrate 10 (see step 4 and FIG. 9). ). In addition, application | coating of the granular material dispersion liquid 15 can also be performed by the inkjet method, the screen printing method, the nozzle coating method etc., for example.

  Then, the liquid 13 contained in the formed film of the granular material dispersion 15 is removed (see step 5 and FIG. 10). The liquid 13 can be removed by, for example, drying. By removing the liquid 13, a plurality of X-ray shielding granules 11 can be arranged as shown in FIG. 10. Usually, since the adjacent X-ray shielding granules 11 are arranged in close contact with each other, the distance between the X-ray shielding granules 11 is approximately approximate to the average particle diameter of the X-ray shielding granules 11. That is, the plurality of X-ray shielding granules 11 are arranged at a pitch equal to or smaller than the reflection suppression wavelength.

  Finally, the second substrate 12 is produced by forming the opening 12a in the substrate 12b, and the X-ray lithography mask 1 is completed (step 6).

  As described above, the X-ray lithography mask 1 according to the first embodiment can be manufactured relatively easily and inexpensively without requiring a large-scale apparatus such as an electron beam (EB) emitting apparatus. Specifically, in order to manufacture an X-ray mask having a large area (for example, 50 mm square) by a conventional method using both an electron beam (EB) drawing method and a dry etching method, it takes about 600 hours. While it takes a long time, the X-ray lithography mask 1 according to the first embodiment can be manufactured in about 15 hours, for example, about 1/40. Further, even when the light reflection preventing concavo-convex structure is formed in a large area (for example, 50 mm square), it can be formed relatively inexpensively and easily. Therefore, by using this X-ray lithography mask 1, it is possible to easily and inexpensively manufacture a structure (for example, an optical element or the like) having a light reflection preventing uneven structure.

  Next, a method for manufacturing a structure having a light-reflection preventing concavo-convex structure (hereinafter sometimes referred to as “light-reflection preventing structure”) using the X-ray lithography mask 1 according to the first embodiment will be described. This will be described in detail with reference to FIGS. 11 to 14.

  FIG. 11 is a flowchart showing a process of manufacturing the light reflection preventing structure 22.

  12 to 14 are cross-sectional views showing a process for manufacturing the light reflection preventing structure 22. Specifically, FIG. 12 is a cross-sectional view showing a patterning process of the X-ray photosensitive film 21. FIG. 13 is a cross-sectional view showing an etching process of the structure forming substrate (for example, a transparent substrate) 20 from above the X-ray photosensitive film 21. FIG. 14 is a cross-sectional view of the light reflection preventing structure 22.

  First, a structure forming substrate 20 for preparing a light reflection preventing concavo-convex structure is prepared. The structure forming substrate 20 may be light transmissive, for example. Specifically, the structure forming substrate 20 may be a quartz substrate.

  Next, an X-ray photosensitive film (for example, an X-ray resist film) 21 is formed on one surface of the structure forming substrate 20 (step 11). The X-ray photosensitive film 21 is a film substantially made of an X-ray photosensitive material (for example, an X-ray resist material). Examples of the X-ray photosensitive material generally include an EB resist material and a chemically amplified resist. Specific examples include polymethyl methacrylate resin (PMMA), epoxy resin, vinyl resin, silicon resin, and the like.

  The film thickness of the X-ray photosensitive film 21 can be appropriately determined depending on the aspect ratio of the light reflection preventing structure to be formed. The film thickness of the X-ray photosensitive film 21 can be set to, for example, about 0.3 μm. The X-ray photosensitive film 21 can be formed by, for example, a spin coating method.

  Next, the X-ray lithography mask 1 according to the first embodiment is disposed above the structure forming substrate 20 on which the X-ray photosensitive film 21 is formed (see step 12 and FIG. 12). The X-ray lithography mask 1 is arranged so that the X-ray shielding layer 2 and the X-ray photosensitive film 21 face each other. The distance (gap) between the X-ray lithography mask 1 and the structure forming substrate 20 is preferably such that X-ray diffraction and interference occur. Specifically, the gap (gap) between the X-ray lithography mask 1 and the structure forming substrate 20 can be set to about 50 μm, for example.

  Then, the X-ray photosensitive film 21 is exposed to X-rays, for example, at 15 A · min through the X-ray lithography mask 1, and then exposed to [for example, 2- (2-n-butoxyethoxy) ethanol or the like. The component is developed by immersing in a developing solution to pattern the X-ray photosensitive film 21 into a predetermined pattern (step 13). The X-ray irradiation can be performed using, for example, an SR (synchrotron radiation) light device.

  Of the X-rays incident on the X-ray shielding layer 2, the X-rays incident on the transmission region TR pass through the X-ray shielding layer 2 and reach the X-ray photosensitive film 21. On the other hand, the X-rays incident on the non-transmissive region NTR are absorbed by the X-ray shielding layer 2 and do not reach the X-ray photosensitive film 21. Therefore, the X-ray photosensitive film 21 is exposed with a pattern corresponding to the arrangement of the transmission regions TR, that is, the arrangement of the X-ray shielding granules 11. As a result, a plurality of holes arranged at a predetermined pitch can be formed in the X-ray photosensitive film 21.

  Next, the structure forming substrate 20 is etched from above the patterned X-ray photosensitive film 21 using, for example, an RIE dry etching apparatus to form the light reflection preventing uneven structure 23 on the structure forming substrate 20. Thus, the light reflection preventing structure 22 is completed (step 14). The X-ray photosensitive film 21 is peeled and removed simultaneously with the etching of the structure forming substrate 20 in this etching process.

  The surface of the light reflection preventing structure 22 obtained by etching has a concavo-convex structure having a plurality of surfaces (planar or curved surfaces) inclined with respect to the surface direction, specifically, a pitch (adjacent to the reflection suppression wavelength). A center-to-center distance between the cone-shaped projections 23a, typically, a distance between the tips of adjacent cone-shaped projections 23a: a plurality of cone-shaped projections arranged at P2) in FIG. The light reflection preventing concavo-convex structure 23 constituted by 23a is formed. The cone-shaped protrusion 23a may be, for example, a polygonal pyramid-shaped protrusion, a cone-shaped protrusion, or the like in plan view. Further, the tip may be an R chamfered shape or a truncated cone-shaped protrusion.

  Aspect ratio (P2 / H in FIG. 14: value obtained by dividing the pitch (P2) of the cone-shaped protrusion 23a by the height (H) of the cone-shaped protrusion 23a) of the formed cone-shaped protrusion 23a. ) Is preferably 1 or more. By setting the aspect ratio to 1 or more, a high light reflection suppressing effect can be realized.

  As described above, the light reflection preventing structure 22 manufactured according to the first embodiment has the light reflection preventing concavo-convex structure 23 including the plurality of cone-shaped protrusions 23a. However, the structure having the light reflection preventing concavo-convex structure according to the present invention is not limited to this structure. For example, the light reflection composed of a plurality of conical (conical, conical) concave portions. It may have a preventive uneven structure.

  Further, the light reflection preventing structure 22 may be an optical element, for example. Moreover, the shaping | molding die etc. for forming these optical elements may be sufficient. In the present specification, the “optical element” has at least one optical functional surface on which light is incident, and specific examples include a lens, a mirror, and a prism.

  In the first embodiment, an example in which the structure forming substrate 20 has a flat plate shape has been described. However, the structure forming substrate 20 has a plate shape in which both surfaces are formed by curved surfaces (for example, a concave surface or a convex surface). It may be a body. Furthermore, the object to form the light reflection preventing uneven structure 23 is not limited to a plate-like body, and may be, for example, a triangular prism shape, a spherical shape, an elliptical shape, or the like.

(Embodiment 2)
FIG. 15 is a flowchart showing a manufacturing process of the light reflection preventing structure 32 according to the second embodiment.

  16 and 17 are cross-sectional views showing a process for manufacturing the light reflection preventing structure 32. Specifically, FIG. 16 is a cross-sectional view illustrating a process of irradiating the structure forming substrate 30 with X-rays. FIG. 17 is a cross-sectional view of the light reflection preventing structure 32.

  In the first embodiment, the process of forming the light reflection preventing concavo-convex structure 23 on the structure forming substrate 20 such as a quartz substrate has been described. However, in the second embodiment, an X-ray photosensitive material (for example, an X-ray resist material) is used. A process example of forming the light reflection preventing concavo-convex structure 33 on the structure forming substrate 30 will be described. In other words, the manufacturing process of the light reflection preventing structure 32 formed of the X-ray photosensitive material will be described in detail with reference to FIGS.

In the description of the second embodiment, structural elements having substantially the same functions will be described using the same reference numerals as those in the first embodiment, and description thereof will be omitted. First, a structure forming substrate made of an X-ray photosensitive material ( For example, a PMMA substrate or the like) 30 is prepared.

  Next, the X-ray lithography mask 1 described in the first embodiment is disposed above the structure forming substrate 30 (see step 21 and FIG. 16). The X-ray lithography mask 1 is disposed so that the X-ray shielding layer 2 and the structure forming substrate 30 face each other. The distance (gap) between the X-ray lithography mask 1 and the structure forming substrate 30 is preferably such that X-ray diffraction and interference occur. Specifically, the distance (gap) between the X-ray lithography mask 1 and the structure forming substrate 30 can be about 50 μm.

  Then, the structure forming substrate 30 is exposed to X-rays, for example, at 15 A · min through the X-ray lithography mask 1, and then exposed to [for example, 2- (2-n-butoxyethoxy) ethanol or the like. By developing by dipping in a developing solution, the light reflection preventing concavo-convex structure 33 is formed on the structure forming substrate 20 substantially made of an X-ray photosensitive material, and the light reflection preventing structure 32 is completed. (Step 22).

  As shown in FIG. 17, the surface of the light reflection preventing structure 32 obtained by etching has a concavo-convex structure having a plurality of surfaces (plane or curved surface) inclined with respect to the surface direction, specifically, reflection suppression. The light reflection preventing concavo-convex structure 33 constituted by a plurality of cone-shaped protrusions 33a arranged at a pitch equal to or smaller than the wavelength (P2 in FIG. 17) is formed. The cone-shaped projection 33a may be, for example, a polygonal pyramid-shaped projection, a cone-shaped projection, or the like in plan view. Further, the tip may be an R chamfered shape or a truncated cone-shaped protrusion.

  According to the manufacturing method according to the first embodiment, the light reflection preventing concavo-convex structure can be formed on the structure forming substrate 20 formed of various materials. On the other hand, although the light reflection preventing concavo-convex structure can be formed by the manufacturing method according to the second embodiment is limited to the structure forming substrate 30 formed of the X-ray photosensitive material, it has been described in the first embodiment. The light reflection preventing structure 32 can be manufactured more easily and inexpensively with fewer steps than the method.

(Embodiment 3)
FIG. 18 is a flowchart showing a process of manufacturing the light reflection preventing structure 22 according to the third embodiment.

  19 to 22 are cross-sectional views showing steps for manufacturing the light reflection preventing structure 22 according to the third embodiment. Specifically, FIG. 19 is a sectional view showing a patterning process of the X-ray photosensitive film 21. FIG. 20 is a cross-sectional view showing an etching process of the etching mask film 41 from above the X-ray photosensitive film 21. FIG. 21 is a cross-sectional view showing an etching process of the structure forming substrate 20 from above the etching mask film 41. FIG. 22 is a cross-sectional view of the light reflection preventing structure 22.

  In the third embodiment, a method capable of manufacturing the light reflection preventing structure 22 having the light reflection preventing uneven structure 23 constituted by the cone-shaped protrusions 23a having a large aspect ratio relatively easily as compared with the first embodiment. Details will be described with reference to FIGS.

  In the description of the third embodiment, constituent elements having substantially the same function will be described with reference numerals common to the first embodiment, and description thereof will be omitted.

  First, an etching mask film 41 is formed on a structure forming substrate 20 made of a quartz substrate or the like by a sputtering method or the like (step 31). For example, the etching mask film 41 is substantially made of chromium, nickel, iron, aluminum, carbon, tantalum, molybdenum, platinum, gold, or chromium, nickel, iron, aluminum, carbon, tantalum, molybdenum, platinum, and gold. It may be made of an alloy containing one or more materials selected from the group consisting of: The thickness of the etching mask film 41 is not particularly limited, but can be, for example, about 0.3 μm.

  Further, the X-ray photosensitive film 21 containing the X-ray photosensitive material is formed on the etching mask film 41 (step 32).

  The X-ray lithography mask 1 described in the first embodiment is disposed opposite to the structure forming substrate 20 on which the etching mask film 41 and the X-ray photosensitive film 21 are formed (step 33, see FIG. 19). The X-ray lithography mask 1 is arranged so that the X-ray shielding layer 2 and the X-ray photosensitive film 21 face each other. The distance (gap) between the X-ray lithography mask 1 and the structure forming substrate 20 is preferably such that X-ray diffraction and interference occur. Specifically, the distance (gap) between the X-ray lithography mask 1 and the structure forming substrate 20 can be about 50 μm.

  Then, the structure forming substrate 20 on which the X-ray photosensitive film 21 is formed via the X-ray lithography mask 1 is exposed to X-rays, for example, at 15 A · min, and then exposed to [for example, 2- (2 The main component is (n-butoxyethoxy) ethanol or the like] The X-ray photosensitive film 21 is patterned into a predetermined pattern by being immersed in a developing solution and developed (step 34).

  Next, the etching mask film 41 is etched (for example, wet etching) from the patterned X-ray photosensitive film 21 to be patterned into a desired pattern (step 35, see FIG. 20). Then, the structure forming substrate 20 is etched from above the patterned etching mask film 41 by using, for example, an RIE dry etching apparatus to form the light reflection preventing uneven structure 23 on the structure forming substrate 20. Thus, the light reflection preventing structure 22 is completed (step 36, see FIG. 21).

  As described above, by providing a further etching mask film 41 and performing etching a plurality of times, it is possible to increase the aspect ratio of each of the cone-shaped protrusions 23a constituting the light reflection preventing concavo-convex structure 23. Furthermore, from the viewpoint of realizing the cone-shaped protrusion 23 a having a large aspect ratio, it is preferable that the etching rate of the etching mask film 41 in step 35 is lower than the etching rate of the X-ray photosensitive film 21 in step 34. Further, by reducing the etching rate of the etching mask film 41, it is possible to form the cone-shaped protrusion 23a having a larger aspect ratio.

(Embodiment 4)
FIG. 23 is a flowchart showing a process for manufacturing the mold 54 according to the fourth embodiment.

  24 to 26 are cross-sectional views showing steps for manufacturing the mold 54. Specifically, FIG. 24 is a cross-sectional view illustrating a process of forming the conductive layer 52. FIG. 25 is a cross-sectional view illustrating a process of forming the molding die 54 on the light reflection preventing structure 22. FIG. 26 is a cross-sectional view illustrating a process of separating the mold 54 from the light reflection preventing structure 22.

  In the fourth embodiment, for example, a metal mold 54 for molding a molding (for example, an optical element) having the light reflection preventing concavo-convex structure 23 using the light reflection preventing structure 22 described in the first embodiment. The process of manufacturing the above will be described in detail with reference to FIGS.

  In the fourth embodiment, the mold 54 is formed by an electroforming replication method. For example, when the light reflection preventing structure 22 does not have conductivity, first, the conductive layer 52 having conductivity is formed on the light reflection preventing structure 22 (step 41). For example, as shown in FIG. 24, the conductive layer 52 can be formed by immersing the antireflection structure 22 in an electroless plating solution (for example, an electroless plating Ni / B solution) 51. The layer thickness of the conductive layer 52 is not particularly limited, but can be, for example, 30 nm. If the light reflection preventing structure 22 itself has conductivity, this step 41 can be omitted.

  Next, as shown in FIG. 25, the metal ion contained in the electrolytic solution 53 is made conductive by immersing the antireflection structure 22 in an electrolytic solution (for example, nickel sulfamate electrolytic solution) 53 containing metal ions. A metal mold (former) 54 is formed by depositing and depositing on the layer 52 (when the conductive layer 52 is not formed, the light reflection preventing uneven structure 23) (step 42).

  Finally, the molding die 54 is completed by separating the molding die 54 from the light reflection preventing structure 22 (step 43). The mold 54 can be separated, for example, by directly peeling the light reflection preventing structure 22. Further, for example, as shown in FIG. 23, the light reflection preventing structure 22 in which the molding die 54 is formed may be immersed in a base solvent (for example, sodium hydroxide) 55.

  The thickness of the mold 54 is not particularly limited, but can be about 1.0 mm, for example.

  Using the molding die 54 formed in this manner, a molded article having the light reflection preventing concavo-convex structure 23 can be easily molded by press-molding heat-softened resin, low melting point glass, or the like.

  The mold 54 according to the fourth embodiment can be easily and inexpensively replicated once the light reflection preventing structure 22 is formed as a one-end matrix. Therefore, the molding die 54 according to the fourth embodiment can be easily produced at low cost, and is excellent in mass productivity. Further, even a large-area mold 54 can be manufactured relatively easily.

(Embodiment 5)
FIG. 27 is a flowchart showing the manufacturing process of the glass molding 64 according to the fifth embodiment.

  28 to 30 are cross-sectional views showing the manufacturing process of the glass molding 64. Specifically, FIG. 28 is a cross-sectional view showing a process of arranging the light reflection preventing structure 22 as a molding die so as to face each other. FIG. 29 is a cross-sectional view showing a process of press-molding the glass material 62 by the light reflection preventing structure 22. FIG. 30 is a cross-sectional view illustrating a process of isolating the light reflection preventing structure 22.

  In the fifth embodiment, for example, a step of molding a glass molding having a light reflection preventing concavo-convex structure corresponding to the light reflection preventing concavo-convex structure 23 using the light reflection preventing structure 22 of the first embodiment as a mold. This will be described in detail with reference to FIGS.

  First, the surface protective film 61 is formed on the light reflection preventing concavo-convex structure 23 side surface of the light reflection preventing structure 22 (step 51). This surface protective film 61 is for improving the releasability (dissociation) of the glass material 62 to be press-molded. The surface protective film 61 can be formed of a noble metal alloy such as an Ir—Rh alloy or a noble metal, for example. The thickness of the surface protective film 61 is not particularly limited, but can be, for example, about 0.01 μm.

  On the other hand, a mold 63 having a shape corresponding to the shape of the glass material 62 to be press-molded is prepared. A surface protective film 61 is also formed on the surface of the mold 63. The mold 63 can be formed of, for example, a cemented carbide containing WC as a main component.

  A glass material (for example, crown borosilicate glass, glass transition temperature (Tg): 501 ° C., yield point (At): 549 ° C.) 62 is arranged on the mold 63, and the surface protection is also provided on the glass material 62. A film 61 is formed. The surface protective film 61 formed on the glass material 62 can be formed of, for example, boron nitride (BN). When the light reflection preventing structure 22 is made of glass, it is preferable that the glass transition temperature of the light reflection preventing structure 22 is higher than the glass transition temperature of the glass material 62. Further, when the light reflection preventing structure 22 is formed of crystals, it is preferable that the melting point of the light reflection preventing structure 22 is higher than the glass transition temperature of the glass material 62. For example, the light reflection preventing structure 22 used in the fifth embodiment is preferably made of quartz glass having a relatively high glass transition temperature. By doing so, the variation of the glass material 62 in which press molding is possible becomes wide.

  Then, as shown in FIG. 28, the light reflection preventing structure 22 as a molding die is arranged so that the light reflection preventing uneven structure 23 faces the glass material 62. After the placement, the glass material 62 is heated to the vicinity of its softening temperature, and the glass material 62 is pressed for a predetermined period (for example, several minutes) with the light reflection preventing structure 22 as a mold (step 52). Thereafter, as shown in FIG. 30, the light reflection preventing structure 22 is raised and released while maintaining the temperature of the glass material 62 (step 53). Then, by cooling the molded glass material 62 to a predetermined temperature (for example, glass transition temperature to room temperature), the glass molding 64 to which the light reflection preventing concavo-convex structure 23 is transferred can be completed. In addition, it is preferable to perform this heating process, a press process, and a cooling process in the chamber substituted by inert gas (for example, nitrogen gas, argon gas, etc.). By doing so, modification | denaturation etc. of the shaping | molding die 63 can be suppressed.

  According to the method of the fifth embodiment, once the light reflection preventing structure 22 is formed as a matrix, the glass molding having the light reflection preventing concavo-convex structure can be replicated easily and inexpensively. . That is, according to the method according to the fifth embodiment, it is possible to easily mass-produce a glass molding having a light reflection preventing concavo-convex structure at a low cost.

  The glass molding 64 obtained in the fifth embodiment may be an optical element, for example, or may be a glass mold for molding the optical element.

(Embodiment 6)
FIG. 31 is a flowchart showing a manufacturing process of the resin molding 76 according to the sixth embodiment.

  32 to 34 are cross-sectional views showing manufacturing steps of the resin molding 76 according to the sixth embodiment. Specifically, FIG. 32 is a cross-sectional view showing a process of fitting and inserting the light reflection preventing structure 22 into the cavity 74. FIG. 33 is a cross-sectional view showing a process of injecting resin 75 into cavity 74. FIG. 34 is a cross-sectional view showing the process of obtaining the resin molding 76 by solidifying the injected and filled resin 75.

  In the sixth embodiment, the resin molding 76 is molded by an injection molding method using the light reflection preventing structure 22 as an insert mold. Specifically, first, a mold body 70 that can be separated into a first mold 71 and a second mold 72 is prepared. For example, a rectangular parallelepiped internal space (cavity) 74 is formed in the mold body 70. Specifically, a recess is formed in each of the first mold 71 and the second mold 72, and a cavity 74 is formed by these recesses. An opening 77 communicating with the cavity 74 is formed on the side wall of the mold body 70.

  The recess formed in the first mold 71 has substantially the same size as the outer shape of the light reflection preventing structure 22, and the light reflection preventing structure 22 is fitted into the recess so as not to be displaced (step 61). FIG. 32). A surface protective film 73 is preferably formed on the light reflection preventing concavo-convex structure 23 portion of the light reflection preventing structure 22 and the inner side surface of the mold body 70. The surface protective film 73 can be formed, for example, by applying a silane coupling agent.

  Next, the resin 75 is injected and filled into the cavity 74 from the opening 77 (see step 62 and FIG. 33). The kind of resin 75 to be injected is not particularly limited. Examples of the resin 75 include polyolefin resin, acrylic resin, Teflon (registered trademark of EI DuPont de Nemours and Company), polyolefin resin, polycarbonate resin, and the like.

  Specifically, the injection of the resin 75 can be performed by the following procedure, for example. First, the mold body 70 and the light reflection preventing structure 22 as an insert mold are heated to a predetermined temperature. The heating temperature can be appropriately determined depending on the injected resin 75, injection conditions, and the like. Specifically, the temperature of the mold body 70 can be set to 130 ° C., for example. Into the cavity 74 of the heated mold body 70, a resin 75 heated to a predetermined temperature and in a fluid state is injected and injected. The temperature of the resin 75 at the time of injection injection can be determined as appropriate based on the viscosity characteristics of the resin 75 and the like. When the polyolefin resin is injected and injected, the temperature of the resin 75 to be injected and injected can be set to about 250 ° C., for example. The injection speed of the resin 75 can also be appropriately determined in consideration of the viscosity characteristics of the resin 75, the shape of the cavity 74, and the like. The injection speed of the resin 75 can be set to, for example, 50 mm / second.

  After the filling of the resin 75 is completed, the resin 75 is solidified while applying a predetermined pressure to the injected resin 75, so that the light reflection prevention corresponding to the shape of the light reflection prevention uneven structure 23 of the light reflection prevention structure 22 is achieved. A resin molding 76 having an uneven structure is obtained (step 63, see FIG. 34). For example, when the resin 75 is thermosetting or thermoplastic, the resin 75 is solidified by cooling. When the resin 75 is photocurable, the resin 75 is solidified by irradiating the resin 75 with light (for example, ultraviolet light or the like). The reason why a predetermined pressure is applied to the solidification process is to suppress sink marks of the resin 75 in the solidification process. The pressure applied to the resin 75 in the solidification step can be set to 100 MPa, for example.

  After the resin 75 is solidified, the mold body 70 is separated into a first mold 71 and a second mold 72, and the molded resin molding 76 is taken out from the mold body 70.

  According to the method of the sixth embodiment, once the light reflection preventing structure 22 is formed as a matrix, the resin molding having the light reflection preventing uneven structure can be easily and inexpensively duplicated. . In particular, by using the injection molding method as in the sixth embodiment, the molding of the resin molding becomes easier. That is, according to the method according to the sixth embodiment, it is possible to easily mass-produce a resin molding having a light reflection preventing concavo-convex structure at a low cost.

  The resin molding 76 obtained in the sixth embodiment may be an optical element, for example.

  Since the present invention can be easily produced at low cost, it can be widely applied to optical elements such as lens elements, prism elements, and mirror elements that are required to have a light reflection preventing effect, and light on which these optical elements are mounted. It is suitable for an optical pickup optical system of a reproduction / recording apparatus, a photographing optical system of a digital still camera, a projection system and illumination system of a projector, an optical scanning optical system, and the like.

1 is a cross-sectional view of an X-ray lithography mask 1 according to Embodiment 1. FIG. 2 is a cross-sectional view of an X-ray shielding granular material 11. FIG. 2 is an enlarged partial cross-sectional view of a part of an X-ray lithography mask 1. FIG. It is a flowchart showing the manufacturing process of the mask 1 for X-ray lithography. It is a figure showing the process of dripping ammonia. It is a figure showing the process of forming the granular material main body 11a. It is a figure showing the process of coating the surface of the granular material main body 11a with the X-ray shielding film 11b. 3 is a cross-sectional view illustrating a process of forming a first substrate 10. FIG. 3 is a cross-sectional view illustrating a process of applying a granular material dispersion 15. FIG. 6 is a cross-sectional view illustrating a process of removing liquid 13. FIG. 4 is a flowchart showing a process for manufacturing the light reflection preventing structure 22. 5 is a cross-sectional view illustrating a patterning process of the X-ray photosensitive film 21. FIG. 3 is a cross-sectional view illustrating an etching process of a structure forming substrate (for example, a transparent substrate) 20 from above the X-ray photosensitive film 21. FIG. 3 is a cross-sectional view of a light reflection preventing structure 22. FIG. 10 is a flowchart showing a manufacturing process of the light reflection preventing structure 32 according to the second embodiment. It is sectional drawing showing the process of irradiating the structure formation board | substrate 30 with an X-ray. 3 is a cross-sectional view of a light reflection preventing structure 32. FIG. 10 is a flowchart showing a process of manufacturing a light reflection preventing structure 22 according to Embodiment 3. 5 is a cross-sectional view illustrating a patterning process of the X-ray photosensitive film 21. FIG. 5 is a cross-sectional view showing an etching process of an etching mask film 41 from above the X-ray photosensitive film 21. FIG. 5 is a cross-sectional view illustrating an etching process of the structure forming substrate 20 from above the etching mask film 41. FIG. 3 is a cross-sectional view of a light reflection preventing structure 22. FIG. 10 is a flowchart showing a process for manufacturing a molding die 54 according to Embodiment 4. 5 is a cross-sectional view illustrating a process of forming a conductive layer 52. FIG. 6 is a cross-sectional view illustrating a process of forming a molding die 54 on the light reflection preventing structure 22. FIG. 6 is a cross-sectional view illustrating a process of separating the molding die 54 from the light reflection preventing structure 22. FIG. 10 is a flowchart illustrating a manufacturing process of a glass molding 64 according to the fifth embodiment. It is sectional drawing showing the process of arrange | positioning the light reflection preventing structure 22 facing each other. 5 is a cross-sectional view illustrating a process of press-molding a glass material 62 with a light reflection preventing structure 22. FIG. FIG. 6 is a cross-sectional view illustrating a process of isolating light reflection preventing structure 22. 10 is a flowchart showing a manufacturing process of a resin molding 76 according to Embodiment 6. 7 is a cross-sectional view illustrating a process of fitting and inserting the light reflection preventing structure 22 into a cavity 74. FIG. 6 is a cross-sectional view illustrating a process of injecting a resin 75 into a cavity 74. FIG. It is sectional drawing showing the process of solidifying the inject | poured resin 75 and obtaining the resin molding 76. FIG.

1 Mask for X-ray lithography
2 X-ray shielding layer
3 mixture
10, 12 substrate
11 X-ray shielding granules
11a Granule body
11b X-ray shielding film
15 Granular dispersion
20, 30 Structure forming substrate
21 X-ray photosensitive film
22, 32 Light reflection preventing structure
23, 33 Uneven structure for preventing light reflection
23a, 33a Conical projection
41 Etching mask film
52 Conductive layer
53 Electrolyte
54, 63 Mold
61, 73 Surface protective film
62 Glass material
64 Glass molding
70 type body
74 cavities
75 resin
76 Resin molding

Claims (24)

An anti-reflection structure having an uneven structure having a plurality of surfaces inclined with respect to the surface direction and having an anti-reflection structure that suppresses reflection of light having a wavelength greater than or equal to a predetermined wavelength is manufactured by X-ray lithography. A mask for X-ray lithography,
A transmissive substrate that transmits X-rays;
An X-ray shielding layer composed of a plurality of granular materials that shield X-rays arranged along the plate surface direction at a pitch equal to or less than the wavelength of the light whose reflection is suppressed by the light reflection preventing structure on the transmission substrate;
A mask for X-ray lithography comprising: The X-ray lithography mask according to claim 1,
The concavo-convex structure is a mask for X-ray lithography comprising a plurality of conical projections. The X-ray lithography mask according to claim 2,
The mask for X-ray lithography, wherein a pitch between the cone-shaped projections is equal to or less than a wavelength of light whose reflection is suppressed by the light reflection preventing structure. The X-ray lithography mask according to claim 1,
Each of the granular materials is a mask for X-ray lithography comprising a granular material main body and an X-ray shielding film that covers the surface of the granular material main body and contains an X-ray shielding material. An anti-reflection structure having an uneven structure having a plurality of surfaces inclined with respect to the surface direction and having an anti-reflection structure that suppresses reflection of light having a wavelength greater than or equal to a predetermined wavelength is manufactured by X-ray lithography. A method for manufacturing a mask for X-ray lithography,
Preparing a transmissive substrate that transmits X-rays;
An arrangement step of arranging a plurality of granular bodies that shield X-rays on the transmission substrate along the plate surface direction at a pitch equal to or less than the wavelength of light that is suppressed by the light reflection preventing structure;
A method for manufacturing a mask for X-ray lithography comprising: In the manufacturing method of the mask for X-ray lithography described in Claim 5,
The arranging step includes a step of preparing a granular dispersion by dispersing and mixing the plurality of granular bodies in a liquid, a step of applying the granular dispersion on the transmission substrate, and the granular dispersion A method of manufacturing a mask for X-ray lithography, including a step of arranging the plurality of granular materials by removing the liquid from the coated transmission substrate. In the manufacturing method of the mask for X-ray lithography described in Claim 5,
The concavo-convex structure is a method for manufacturing a mask for X-ray lithography, wherein the concavo-convex structure is constituted by a plurality of conical projections. In the manufacturing method of the mask for X-ray lithography described in Claim 7,
The pitch between the said cone-shaped projection parts is a manufacturing method of the mask for X-ray lithography which is below the wavelength of the light by which reflection is suppressed by the said light reflection preventing structure. In the manufacturing method of the mask for X-ray lithography described in Claim 5,
Each said granular material is a manufacturing method of the mask for X-ray lithography provided with the granular material main body and the X-ray shielding film which coat | covers the surface of this granular material main body, and contains X-ray shielding material. A transmission substrate that transmits X-rays, and a plurality of particles that shield X-rays arranged on the transmission substrate along the plate surface direction at a pitch equal to or less than the wavelength of light that is suppressed by the light reflection preventing structure. Using an X-ray lithography mask having an X-ray shielding layer made of a body, it has a concavo-convex structure having a plurality of surfaces inclined with respect to the surface direction, and suppresses reflection of light having a wavelength of a predetermined wavelength or more. A method of manufacturing a light reflection preventing structure having a light reflection preventing structure,
Forming an X-ray photosensitive film substantially made of an X-ray photosensitive material on the structure forming substrate;
Disposing an X-ray lithography mask above the structure-forming substrate on which the X-ray photosensitive film is formed so that the X-ray shielding layer faces the structure-forming substrate;
Patterning the X-ray photosensitive film into a predetermined pattern by developing after irradiating the X-ray photosensitive film with X-rays through the X-ray lithography mask;
Etching the structure forming substrate from above the patterned X-ray photosensitive film to form the light reflection preventing structure on the structure forming substrate;
The manufacturing method of the light reflection preventing structure provided with. A transmission substrate that transmits X-rays, and a plurality of particles that shield X-rays arranged on the transmission substrate along the plate surface direction at a pitch equal to or less than the wavelength of light that is suppressed by the light reflection preventing structure. Using an X-ray lithography mask having an X-ray shielding layer made of a body, it has a concavo-convex structure having a plurality of surfaces inclined with respect to the surface direction, and suppresses reflection of light having a wavelength of a predetermined wavelength or more. A method of manufacturing a light reflection preventing structure having a light reflection preventing structure,
Disposing an X-ray lithography mask above a structure-forming substrate substantially made of an X-ray photosensitive material so that the X-ray shielding layer faces the structure-forming substrate;
Forming the light reflection preventing structure on the structure forming substrate by irradiating the structure forming substrate with X-rays through the X-ray lithography mask and developing the X-ray lithography mask;
The manufacturing method of the light reflection preventing structure provided with. A transmission substrate that transmits X-rays, and a plurality of particles that shield X-rays arranged on the transmission substrate along the plate surface direction at a pitch equal to or less than the wavelength of light that is suppressed by the light reflection preventing structure. Using an X-ray lithography mask having an X-ray shielding layer made of a body, it has a concavo-convex structure having a plurality of surfaces inclined with respect to the surface direction, and suppresses reflection of light having a wavelength of a predetermined wavelength or more. A method of manufacturing a light reflection preventing structure having a light reflection preventing structure,
Forming an etching mask film on the structure forming substrate;
Forming an X-ray photosensitive film substantially made of an X-ray photosensitive material on the etching mask film;
Disposing an X-ray lithography mask above the structure-forming substrate on which the X-ray photosensitive film is formed so that the X-ray shielding layer faces the structure-forming substrate;
Patterning the X-ray photosensitive film into a predetermined pattern by developing after irradiating the X-ray photosensitive film with X-rays through the X-ray lithography mask;
Etching the etching mask film from above the patterned X-ray photosensitive film to pattern the etching mask film into a predetermined pattern;
Etching the structure forming substrate from above the patterned etching mask film to form the light reflection preventing structure on the structure forming substrate;
The manufacturing method of the light reflection preventing structure provided with. In the manufacturing method of the light reflection preventing structure according to any one of claims 10 to 12,
The uneven structure is a method of manufacturing a light reflection preventing structure including a plurality of conical protrusions. In the manufacturing method of the light reflection preventing structure according to claim 13,
The pitch between the said cone-shaped projection parts is a manufacturing method of the light reflection preventing structure which is below the wavelength of the light by which reflection is suppressed by the said light reflection preventing structure. In the manufacturing method of the light reflection preventing structure according to any one of claims 10 to 12,
Each said granular material is a manufacturing method of the light reflection prevention structure provided with the granular material main body and the X-ray shielding film which coat | covers the surface of this granular material main body, and contains X-ray shielding material. In the manufacturing method of the light reflection preventing structure according to any one of claims 10 to 12,
The light reflection preventing structure is an optical element manufacturing method of a light reflection preventing structure. A method of manufacturing a mold for manufacturing an optical element having an anti-reflection structure that has an uneven structure having a plurality of surfaces inclined with respect to the surface direction and suppresses reflection of light having a wavelength of a predetermined wavelength or more. There,
A step of producing by Rihikari antireflection structure the production method described in any one of claims 10 to 12,
The light reflection preventing structure is immersed in an electrolytic solution containing metal ions, and the metal ions are deposited and deposited on the light reflection preventing structure, thereby forming an object substantially made of the metal. Process,
Separating the object made of the metal from the light reflection preventing structure and forming the mold,
The manufacturing method of the shaping | molding die provided with. In the manufacturing method of the shaping | molding die described in Claim 17,
A step of immersing the antireflection structure in an electroless plating solution and forming a conductive layer having conductivity on the antireflection structure;
The forming object is formed on the conductive layer by a method for manufacturing a mold. In the manufacturing method of the shaping | molding die described in Claim 17,
The step of separating the object to be formed from the light reflection preventing structure includes the step of directly peeling the light reflection preventing structure, or the light reflection preventing structure by immersing the light reflection preventing structure in a base solution. The manufacturing method of the shaping | molding die which is the process of isolate | separating from a body. A method of manufacturing a glass the molded product having a suppressing light reflection preventing structure reflection of light Jo Tokoro wavelength or wavelengths,
A step of producing by Rihikari antireflection structure the production method described in claim 10 or 12,
A glass molding die is formed by forming a release film on the light reflection preventing structure, and the glass molding is obtained by press molding the glass material heated to a predetermined temperature with the glass molding die. A method for producing a glass molding, characterized in that: In the manufacturing method of the glass molding described in Claim 20,
The glass molding is a method for producing a glass molding, which is a mold for press molding a glass material. In the manufacturing method of the glass molding described in Claim 20,
The glass molding is a method for producing a glass molding, which is an optical element. A method of manufacturing a resin to be molded having a suppressing light reflection preventing structure reflection of light Jo Tokoro wavelength or wavelengths,
A step of producing by Rihikari antireflection structure the production method described in claim 10 or 12,
Preparing a mold body including a cavity into which the light reflection preventing structure is fitted and inserted, and an opening communicating with the cavity;
Fitting the light reflection preventing structure into the cavity so that the light reflection preventing structure is exposed; and
Injecting and filling resin into the cavity from the opening;
Obtaining the resin molding by solidifying the injected resin in the cavity and transferring the antireflection structure;
A method for producing a resin molded article comprising: In the manufacturing method of the resin molding as described in Claim 23,
The said resin molding is a manufacturing method of the resin molding which is an optical element.

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