JP4466992B2 - Circuit board, passive component, and method of manufacturing circuit board - Google Patents

Description

  The present invention relates to a circuit board and a passive component having an oxide dielectric layer deposited by spraying aerosolized fine particle material and suitable for a high frequency circuit.

  Information processing related electronic equipment such as personal computers, office computers, mobile phones, PDAs, etc., communication related electronic equipment and semiconductors such as mounting boards and packages incorporated in control machine equipment such as semiconductor manufacturing equipment, semiconductors such as memory and logic, In the individual electronic components for mounting, various dielectric ceramics for realizing an active function such as memory / calculation and a passive function such as an antenna, a filter, and a capacitor are formed in a film or a bulk. These devices / parts are configured by integrating dielectric ceramics with inorganic materials such as metals and semiconductors, organic materials such as glass epoxy resins, and the like by combining and multilayering them.

  Therefore, in such devices and parts in which different kinds of materials are compounded, it is important to match the process temperature and atmosphere of each material and to provide a temperature hierarchy in the process step. Among various materials, ceramic materials have a high process temperature during sintering, so they cannot be matched with other materials, making it difficult to incorporate ceramic materials into the above devices and limiting the introduction of ceramic materials. was there.

As a method for solving this problem, there has been proposed an aerosol deposition method capable of forming a ceramic film on a substrate by impact and solidification by injecting a ceramic fine particle material onto the substrate or the like. The aerosol deposition method is attracting attention as a method for forming a composite material because it does not require heat treatment at a high temperature after the ceramic film is formed.
JP 2001-152360 A JP 2000-58084 A

By the way, passive components such as a multilayer substrate using an oxide dielectric layer formed by using an oxide ceramics fine particle material as an interlayer insulating layer and a capacitor used as a dielectric layer using the aerosol deposition method. Is being considered. As the oxide ceramic, a material having a perovskite crystal structure, for example, using the finely particulate material, is intended to achieve a high dielectric constant with bulk material.

  However, the dielectric properties of a dielectric film layer formed using a conventional aerosol deposition method may be significantly degraded compared to a bulk material having the same composition. In particular, the dielectric loss increases in a high frequency region, for example, 1 GHz or more. Even if the composition can be easily obtained by atmospheric firing of bulk ceramic, the aerosol deposition method has a problem of increased conductivity and dielectric loss.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a circuit board and a passive component having excellent dielectric characteristics in a high frequency region. Another object of the present invention is to provide a circuit board and a passive component that can reduce transmission loss of a high-frequency signal and have a high-speed operation response.

According to one aspect of the present invention, there is provided a circuit board in which an oxide dielectric layer and a conductor layer are laminated, and the conductor is sandwiched between the oxide dielectric layer and the oxide dielectric layer. And an oxide layer formed by spraying an aerosolized fine particle material, the oxide dielectric material, and the oxide dielectric An oxygen deficiency preventive agent for preventing oxygen deficiency of the material, wherein the capacitor is formed without heat treatment after the oxide dielectric layer is deposited, and the oxide dielectric material comprises: , TiO ₂ , BaTiO ₃ , BaSrTiO ₃ , BaTiZrO ₃ , BaTi ₄ O ₉ , Ba ₂ Ti ₉ O ₂₀ , Ba (Mg _1/3 Ta _2/3 ) O ₃ , Ba (Zn _1/3 Ta _2/3 ) O ₃ , Ba (Zn _1/3 Nb _2/3 ) O ₃ , and ZrSnTiO A circuit board including at least one of the group consisting of ₄ is provided.

  According to the present invention, an increase in dielectric loss of an oxide dielectric layer formed by aerosolization can be prevented by adding an oxygen deficiency inhibitor to fine particles of an oxide dielectric material. According to the study of the present inventor, it is assumed that the following mechanism is used. That is, when the fine particle material of the oxide dielectric material is deposited on the substrate or the like, the fine particles collide with each other or the fine particles and the substrate, and a new surface appears on the surface of the fine particles. At that time, oxygen vacancies are generated on the surface of the fine particles, and ions or holes are generated at the atomic sites where the oxygen vacancies are generated. Addition of an oxygen deficiency preventive agent according to the present invention, for example, an oxidizing agent containing oxygen, exerts a reduction-resistant action on the surface of fine particles of the oxide dielectric material, thereby preventing the occurrence of oxygen deficiency.

  The oxidizing agent may be Ca oxide ceramics or Mn oxide ceramics. By using Ca oxide ceramics or Mn oxide ceramics, the dielectric loss in the high frequency region of the oxide dielectric layer can be effectively reduced. In addition, ceramics can be used to form a film by mixing or dissolving with an oxide dielectric material, and in the oxide dielectric layer by spraying simultaneously or alternately with fine particles of the oxide dielectric material. Can be uniformly dispersed.

According to another aspect of the present invention, an oxide dielectric layer formed by spraying an aerosolized fine particle material, and an electrode layer composed of a part of the conductor layer with the oxide dielectric layer interposed therebetween, The oxide dielectric layer includes an oxide dielectric material and an oxygen deficiency preventing agent for preventing oxygen deficiency in the oxide dielectric material, and the capacitor includes the capacitor The oxide dielectric material is formed without being subjected to a heat treatment after the oxide dielectric layer is deposited, and the oxide dielectric material is formed of TiO ₂ , BaTiO ₃ , BaSrTiO ₃ , BaTiZrO ₃ , BaTi ₄ O ₉ , Ba _2. Ti ₉ O ₂₀ , Ba (Mg _1/3 Ta _2/3 ) O ₃ , Ba (Zn _1/3 Ta _2/3 ) O ₃ , Ba (Zn _1/3 Nb _2/3 ) O ₃ , and ZrSnTiO ₄ Receiving at least one of the group consisting of Component is provided.
Furthermore, according to another aspect of the present invention, there is provided a method of manufacturing a circuit board in which an oxide dielectric layer and a conductor layer are laminated, the circuit board comprising the oxide dielectric layer, A capacitor comprising an oxide dielectric layer and an electrode layer made of a part of the conductor layer is provided, and an oxide dielectric material made of fine particles and an oxygen deficiency preventive agent are aerosolized and sprayed onto the substrate. Forming the oxide dielectric layer, wherein the step of forming the oxide dielectric layer is a step in which heat treatment is not performed after the oxide dielectric layer is deposited, and the oxide dielectric layer is formed. Body materials are TiO ₂ , BaTiO ₃ , BaSrTiO ₃ , BaTiZrO ₃ , BaTi ₄ O ₉ , Ba ₂ Ti ₉ O ₂₀ , Ba (Mg _1/3 Ta _2/3 ) O ₃ , Ba (Zn _1/3 Ta _{2 / 3} ) O ₃ , Ba (Zn _1/3 Nb _2/3 ) O ₃ , and ZrSn A method of manufacturing a circuit board that includes at least one of the group consisting of TiO ₄ is provided.
A method of manufacturing a circuit board in which an oxide dielectric layer and a conductor layer are laminated, the circuit board sandwiching the oxide dielectric layer and the oxide dielectric layer, and An electrode layer comprising a part of the body layer; and a step of mixing a dielectric oxide material comprising fine particles and an oxygen deficiency inhibitor to form a fine particle mixture; and And forming the oxide dielectric layer by spraying on the substrate, and the step of forming the oxide dielectric layer is a method in which heat treatment is not performed after the oxide dielectric layer is deposited. The oxide dielectric material is TiO ₂ , BaTiO ₃ , BaSrTiO ₃ , BaTiZrO ₃ , BaTi ₄ O ₉ , Ba ₂ Ti ₉ O ₂₀ , Ba (Mg _1/3 Ta _2/3 ) O ₃ , Ba (Zn _1/3 Ta _2/3 ) O ₃ , Ba (Zn _1/3 Nb _2/3 ) O ₃ and ZrSnTiO ₄ are provided. A method for producing a circuit board that includes at least one of the groups is provided.
A method of manufacturing a circuit board in which an oxide dielectric layer and a conductor layer are laminated, the circuit board sandwiching the oxide dielectric layer and the oxide dielectric layer, and An oxide dielectric layer having an electrode layer comprising a part of the body layer and an oxide dielectric material comprising fine particles and an oxygen deficiency preventing agent sprayed simultaneously or alternately from different spray nozzles The step of forming the oxide dielectric layer is not subjected to a heat treatment after the oxide dielectric layer is deposited, and the oxide dielectric material is made of TiO _2. BaTiO ₃ , BaSrTiO ₃ , BaTiZrO ₃ , BaTi ₄ O ₉ , Ba ₂ Ti ₉ O ₂₀ , Ba (Mg _1/3 Ta _2/3 ) O ₃ , Ba (Zn _1/3 Ta _2/3 ) O ₃ , Ba (Zn _1/3 Nb _2/3 ) O ₃ and ZrSnTiO _A method of manufacturing a circuit board that includes at least one of the group consisting of ₄ is provided.

  According to the present invention, the above-described action can reduce the dielectric loss in the high frequency region, and can achieve low inductance and high speed transmission. Here, the passive component is, for example, a multilayer ceramic capacitor, a thin film coil, a multilayer coil, a filter using these, an inductor using a strip line, a capacitor, a filter, or the like.

  According to the present invention, by adding an oxygen deficiency inhibitor to fine particles of an oxide dielectric material, an increase in dielectric loss of the oxide dielectric layer formed by aerosolization can be prevented, and excellent dielectric properties can be obtained in a high frequency region. Circuit boards and passive components having characteristics can be realized.

  Hereinafter, the present invention will be described more specifically with reference to the drawings as necessary.

  FIG. 1 is a cross-sectional view of a main part of a circuit board according to an embodiment of the present invention. Referring to FIG. 1, a circuit board 10 according to the present embodiment is configured by sequentially laminating a base substrate 11, a lower wiring layer 12, a capacitor layer 13, and an upper wiring layer 14 on the base substrate 11. .

  Specifically, the lower wiring layer 12 includes a first conductor layer 15 selectively formed on the surface of the base substrate 11, a first interlayer insulating layer 16 that covers the base substrate 11 and the first conductor layer 15, A second conductor layer 18 selectively formed on the first interlayer insulating layer 16, a second interlayer insulating layer 19 covering the first interlayer insulating layer 13 and the second conductor layer 14, and a first conductor layer; 15, vias 17, 20, and 26 that electrically connect the second conductor layer 18 and the like.

  The capacitor layer 13 is opposed to the first electrode layer 21 formed on the second interlayer insulating layer 19, the dielectric layer 22 covering the second interlayer insulating layer 19 and the first electrode layer 21, and the first electrode layer 21. Thus, the capacitor 27 is formed of the second electrode layer 23 and the like formed on the dielectric layer 22.

  The upper wiring layer 14 includes a second electrode layer 23 of the capacitor layer 13, a third interlayer insulating layer 24 covering the dielectric layer 22 and the second electrode layer 23, and a third layer formed on the third interlayer insulating layer 24. The conductor layer 25 and the spiral inductor 28, the via 26 connecting the second electrode layer 23 and the third conductor layer 25, and the like.

  The circuit board according to the present embodiment includes the first to third interlayer insulating layers 16, 19, and 24 (hereinafter collectively referred to as an interlayer insulating layer when it is not necessary to distinguish between them) and a dielectric layer 22. The oxide dielectric fine particle material and an oxidant containing oxygen atoms are mixed to be aerosolized and sprayed onto the substrate 11, the conductor layer 15, the electrode layer 23, and the like. In such an aerosol deposition method (hereinafter referred to as “AD method”), when the fine particle material collides with a substrate or the like, the fine particle material and the substrate, or the fine particle material collide with each other, and the fine particle surface is caused by the energy of the collision. When activated, the substrate and the fine particles, or the fine particles adhere to each other, and a continuous film is formed. Therefore, since the AD method can form a film without heating the substrate or the like, the heat treatment (firing) at a high temperature of about 900 ° C. to 1000 ° C. like the LTCC method is not required.

Returning to FIG. 1, oxide dielectric materials used for the interlayer insulating layers 16, 19, and 24 are MgO, TiO ₂ , ZrO ₂ , SiO ₂ , Al ₂ O ₃ , BaTiO ₃ from the viewpoint of low dielectric loss at high frequencies. _{3, BaZrO 3, ZrSnTiO 4,} BaTi 4 O 9, Ba 2 Ti 9 O 20, MgTiO 3, MgZrO 3, Ba (Zn 1/3 Ta 2/3) O 3, Ba (Zn 1/3 Nb 2/3 ) O ₃ , Ba (Mg _1/3 Ta _2/3 ) O ₃ , Ba (Co _1/3 Ta _2/3 ) O ₃ , Ba (Co _1/3 Nb _2/3 ) O ₃ , Ba (Ni _{1 / 3} Ta _2/3 ) O ₃ , SrTiO ₃ , SrZrO ₃ , Nd ₂ Ti ₂ O ₇ , (BaSr) TiO ₃ , Ba (TiZr) O ₃ , PbTiO ₃ , PbZrO ₃ , Pb (Mg _1/3 Nb _{2/3) O 3, Pb (Ni} 1/3 Nb 2/3) O 3, Pb (Zn 1/3 Nb 2/3) O 3, 3Al 2 O 3 · 2Si _{2 (mullite), MgO · Al 2 O 3} ( spinel), 2MgO · SiO _{2 (forsterite), 2Al 2 O 3 · 2MgO} · 5SiO 2 ( cordierite), CaO · SiO ₂ (wollastonite), CaO · Al ₂ O ₃ · 2SiO _{2 (anorthite), CaO · MgO · 2SiO 2} ( _{diopside), 2CaO · Al 2 O 3} · SiO 2 ( gehlenite) and one or a mixture of two or more selected from these Is preferred.

The oxide dielectric material used for the dielectric layer 22 includes TiO ₂ , BaTiO ₃ , ZrSnTiO ₄ , BaTi ₄ O ₉ , BaTiZrO ₃ , Ba ₂ from the viewpoint of high dielectric constant and low dielectric loss at high frequencies. Ti ₉ O ₂₀ , Ba (Zn _1/3 Ta _2/3 ) O ₃ , Ba (Zn _1/3 Nb _2/3 ) O ₃ , Ba (Mg _1/3 Ta _2/3 ) O ₃ , (BaSr) TiO ₃ and one or a mixture of two or more selected from these are preferred.

  The amount of the oxidant containing oxygen atoms added to the oxide dielectric material is preferably set to 0.1 vol% to 20 vol%, preferably 1 vol% to 10 vol%, based on the total volume after addition. Particularly preferred. If it is less than 0.1% by volume, the dielectric loss increases, and if it exceeds 20% by volume, the dielectric properties of the oxidant are exhibited and the dielectric properties of the oxide dielectric layer are degraded.

Examples of the oxidizing agent containing oxygen atoms include Ca oxide ceramics and Mn oxide ceramic oxides. Examples of Ca oxide ceramics include CaTiO ₃ , CaZrO ₃ , CaSnO ₃ , CaO, and mixtures thereof. Examples of the Mn oxide ceramics include MnO, MnO ₂ , Mn ₂ O ₃ , Mn ₃ O ₄ , MnTiO ₃ , and mixtures thereof. When the interlayer insulating layers 16, 19, 24 and the dielectric layer 22 are formed by the AD method, the fine particles of the oxide dielectric material are collided between the substrate and the fine particles of the oxide dielectric material or between the fine particles. Oxygen atoms are desorbed from the surface, and oxygen defects are formed in the oxide dielectric material. By adding Ca oxide ceramics or Mn oxide ceramics, formation of oxygen defects is prevented, and as a result, the dielectric loss of the formed interlayer insulating layers 16, 19, 24 and the dielectric layer 22 can be reduced. it can.

Of the Mn oxide ceramics, MnO, Mn ₂ O ₃ , Mn ₃ O ₄ , MnTiO ₃ , and mixtures thereof are preferably used from the viewpoint of chemical stability during storage or film formation. MnO ₂ tends to corrode metal aerosol generators and nozzles.

  The average particle diameter of the oxide dielectric material and fine particles of Ca oxide ceramics or Mn oxide ceramics (hereinafter abbreviated as Ca oxide) is set in the range of 10 nm to 10 μm. If it is smaller than 10 nm, the adhesion strength to the substrate is insufficient, and if it is larger than 10 μm, it becomes difficult to form a continuous film, resulting in a fragile film. When an oxide dielectric material and Ca oxide are mixed and sprayed by the AD method, the average particle size ratio (oxide dielectric material / Ca oxide etc.) is within the range of 1/1 to 100/1. It is preferable that Since the oxide dielectric material can be formed so as to cover the surface of the fine particles, oxygen deficiency can be effectively prevented.

  Examples of a method of adding Ca oxide or the like to the oxide dielectric material include mixing or solid solution with each other. For example, finely divided Ca oxide or the like may be mixed and dispersed in an oxide dielectric material in advance (hereinafter referred to as “mixed injection method”), or from an injection nozzle independent of the oxide dielectric material. It may be sprayed and deposited at the same time (hereinafter referred to as “simultaneous spraying method”) or may be sprayed alternately with an oxide dielectric material (hereinafter referred to as “alternate spraying method”). From the viewpoint of uniformity of the formed dielectric film, the mixed injection method is preferable, and from the viewpoint of controllability of the mixing ratio, the simultaneous injection method is preferable. Further, as a method for dissolving the oxygen deficiency preventing agent, the oxygen deficiency preventing agent can be dissolved in advance by mixing and dispersing the oxygen deficiency preventing agent in the oxide dielectric material and performing heat treatment.

  FIG. 2 is a schematic configuration diagram of a film forming apparatus using the AD method used in the present invention. Referring to FIG. 2, the AD film forming apparatus 50 generally includes an aerosol generator 51 that aerosolizes a particulate material, and an interlayer insulating layer and the like that are formed on the substrate 11 by spraying the aerosolized particulate material. It consists of a membrane chamber 52 and the like.

  A gas cylinder 53 and a mass flow controller 54 are connected to the aerosol generator 51 via a pipe 66. A mass flow controller 54 controls a carrier gas such as high-pressure argon filled in the gas cylinder 53. The mass flow controller 54 can control the amount of fine particles generated in the container 56 of the aerosol generator 51 and the amount of aerosolized fine particles ejected in the film forming chamber 52. As the carrier gas, an inert gas such as helium, neon, or nitrogen can be used in addition to argon gas. When an oxide ceramic having a perovskite structure is used as the fine particle material, the carrier gas may be an oxidizing gas such as oxygen or air, or may be added to an inert gas. Oxygen vacancies in the oxide ceramic fine particle material can be compensated for during film formation.

  In addition, the aerosol generator 51 is provided with a vibrator 58 that converts fine particles into primary particles by ultrasonic vibration, electromagnetic vibration, or mechanical vibration. The fine particles can be made primary particles by the vibrator 58, and as a result, a dense and uniform interlayer insulating layer or the like can be formed.

  The film formation chamber 52 is provided with a nozzle 60 connected from the aerosol generator 51 via a pipe 59, and a substrate holding table 61 that holds the substrate 11 so as to face the nozzle 60. An XYZ stage 62 to be controlled is connected to the substrate holder 61. Further, a mechanical booster 64 and a rotary pump 65 for connecting the film forming chamber 52 to a low pressure are connected. The XYZ stage 62 may perform a constant speed / repetitive driving operation of the substrate holder 61.

Fine particles as a film forming material are filled in the container 56 of the aerosol generator 51, and from the gas cylinder 53, for example, an argon gas having a pressure of 19.6 Pa to 49 Pa (2 to 5 kg / cm ² ) is used as a carrier gas to form a film forming chamber 52. The fine particles are vibrated by the vibrator 58 to be aerosolized. The aerosolized fine particles are transferred together with the carrier gas through the pipe 59 to the film forming chamber 52 set to a pressure lower than the pressure in the container 56. In the film forming chamber 52, fine particles are jetted together with the carrier gas from the nozzle 60, forming a jet flow, and the fine particles are deposited on the substrate 11 shown in FIG. 1, for example, and the first interlayer insulating layer 16 is formed. The ejection speed can be controlled by the shape of the nozzle 60, the pressure of the introduced carrier gas, and the pressure difference between the inside of the container 56 and the film forming chamber 52, and is 3 m / sec to 400 m / sec (preferably 200 m / sec). ˜400 m / sec). By setting the injection speed within this range, the first interlayer insulating layer 16 and the like having high adhesion strength with the base such as the substrate 11 can be formed. When the fine particles collide with the substrate 11, the contamination layer and moisture on the surface of the substrate 11 are removed, and the contamination layer and oxide layer on the surface of the first conductor layer 15 and the like are removed to activate the surface. . Further, the surface of the fine particles themselves is similarly activated by the collision of the fine particles. As a result, the fine particles are bonded to the surface of the substrate 11 and the first conductor layer 15 and the fine particles are further bonded to each other, so that the dense first interlayer insulating layer 16 and the like having high adhesion strength are formed. Note that if the jetting speed is higher than 400 m / sec, the substrate 11 may be damaged, and if it is lower than 3 m / sec, sufficient adhesion strength cannot be ensured.

  Using the film forming apparatus 50 described above, an oxide dielectric layer can be formed by a mixed injection method in which Ca oxide or the like is mixed with an oxide dielectric material in advance to form a film. In the above-described simultaneous injection method or alternating injection method, a film forming apparatus having a plurality of independent nozzles is used.

  FIG. 3 is a schematic configuration diagram of another film forming apparatus using the AD method used in the present invention. In the figure, portions corresponding to the portions described above are denoted by the same reference numerals, and description thereof is omitted.

  Referring to FIG. 3, a film forming apparatus 70 includes cylinders 53A and 53B for supplying a carrier gas, mass flow controllers 54A and 54B, aerosol generators 51A and 51B having containers 56A and 56B, and a film forming chamber 52. The nozzles 60A and 60B are provided independently in two systems so that the particulate material can be ejected simultaneously or alternately from the nozzles 60A and 60B. The container 56A of the aerosol generator 51A is filled with an oxide dielectric layer material, the container 56B of the aerosol generator 51B is filled with Ca oxide or the like, and sprayed simultaneously or alternately to spray aerosolized fine particles.

  In the co-injection method, each fine particle is aerosolized and the blending amount is controlled by the carrier gas flow rate or the like. In the alternate injection method, the blending amount is controlled by the carrier gas flow rate, the spraying time of each fine particle, and the like.

  Returning to FIG. 1, the first to third conductor layers 16, 19, 24, the first and second electrode layers 21, 23, 25 (hereinafter collectively referred to as conductor layers), and the via 26 are made of metal or alloy. A conductive material such as a plating method, a sputtering method, a vacuum evaporation method, a CVD method, or the like can be formed. For the patterning of the conductor layer, a known method such as etching after forming a previously patterned resist film or conductor layer can be used.

  Since the AD method does not require high-temperature heat treatment, a low-melting-point metal material can be used for the conductor layer, and a continuous film made of only a metal material can be used. It can be made the material's original low specific resistance. Therefore, CR delay can be suppressed. The conductive material is preferably Cu, Ag, Au, Al, or an alloy thereof from the viewpoint of specific resistance. In addition, the conductive material is preferably Au, Pt, Pd, or an alloy thereof because it is difficult to be oxidized when a gas containing oxygen is used as a carrier gas.

  In the circuit board according to the present embodiment, the dielectric loss at high frequencies of the interlayer insulating layers 16, 19, 24 and the dielectric layer 22 is reduced, so that the transmission loss of high-frequency signals can be reduced. Furthermore, since the conductor layers 16, 19, 24, 21, 23, 25 are made of a low specific resistance material, it is possible to prevent the CR delay of the high frequency signal and the operation response delay of the electronic component.

  The present invention can form passive components such as a capacitor 27 and a spiral inductor 28 in a circuit board as shown in FIG. 1, but can be applied to a single component or an assembly of passive components in the same manner. it can. Examples of the passive component to which the present invention is applied include a multilayer ceramic capacitor, a thin film coil, a multilayer coil, a filter using these, a capacitor using a stripline or a microstripline, an inductor, a coupler, a splitter, a filter, and the like. Can be mentioned.

  FIG. 4 is a cross-sectional view of a multilayer ceramic capacitor according to another embodiment of the present invention. Referring to FIG. 4, the multilayer ceramic capacitor 30 includes dielectric layers 22 a to 22 f and internal electrode layers 21 a to 21 e that are alternately stacked. The internal electrode layers 21 a to 21 e include the first external electrode layer 31 and the first electrode layer 31. 2 It is configured to be electrically connected to the external electrode layer 32.

  The dielectric layers 22a to 22f are formed in the same manner as the dielectric layer 22 shown in FIG. 1, and the internal electrode layers 21a to 21e are the same as the conductor layers 16, 19, 24, 21, 23, 25, etc. shown in FIG. Is formed. Therefore, it is possible to realize a multilayer ceramic capacitor with low inductance and low dielectric loss in a high frequency region.

  The oxide dielectric layer of the present invention can also be used in a passive component using a microstrip line in which an oxide dielectric layer is formed between a ground electrode layer formed of a conductive layer and the microstrip line. it can. The dielectric loss in the high frequency region is low, and the circuit can be miniaturized by using a high relative dielectric constant material similar to that of the dielectric layer 22 shown in FIG.

  Examples of the present invention will be described below. Examples 1 to 10 are examples in which a film is formed by adding Ca oxide ceramics to an oxide dielectric material using a mixed injection method.

[Example 1]
5.0 vol% of CaZrO ₃ powder (manufactured by Sakai Chemical Co., Ltd.) having an average particle diameter of 0.5 μm is added to SrZrO ₃ powder (manufactured by Sakai Chemical Co., Ltd.) having an average particle diameter of 0.25 μm, and the mixture is stirred and mixed by a commercially available mixer. A powder was obtained. Using this mixed powder, a dielectric film having a thickness of 50 μm was formed on a glass substrate by using a film forming apparatus by AD method shown in FIG. A high-purity nitrogen gas having a pressure of 19.6 Pa (purity: 99.9%) was used as a carrier gas, and the flow rate of the carrier gas was set to 4 L / min for aerosolization. The film forming chamber was set to 5 Pa to 10 Pa, the flow rate of the mixed powder was set to 30 g / hour, and sprayed for 30 minutes.

For dielectric property measurement, the dielectric film of this example is made of glass using a lower electrode and an upper electrode made of a laminate of Cr film (thickness 0.1 μm) / Cu film (thickness 0.5 μm). A capacitor having a structure of substrate / lower electrode / dielectric film / upper electrode was formed. The volume concentration of the CaZrO ₃ powder was based on the volume of the mixed powder.

[Example 2]
To the Ba (Mg _1/3 Ta _2/3 ) O ₃ powder (manufactured by High Purity Chemical Laboratory Co., Ltd.) having an average particle size of 0.5 μm, 4 CaZrO ₃ powder having an average particle size of 0.5 μm used in Example 1 was used. 0.0 vol% was added, and a CaZrO ₃ -containing Ba (Mg _1/3 Ta _2/3 ) O ₃ film having a thickness of 50 μm was formed on the glass substrate in the same manner as in Example 1 and used for dielectric property measurement. The capacitor was manufactured.

[Example 3]
To a BaTi ₉ O ₂₀ powder having an average particle size of 0.8 μm (manufactured by Kojundo Chemical Laboratory Co., Ltd.), 3.0 vol% of CaZrO ₃ powder having an average particle size of 0.5 μm used in Example 1 was added. 1, a CaZrO ₃ -containing BaTi ₉ O ₂₀ film having a thickness of 50 μm was formed on a glass substrate, and a capacitor for measuring dielectric properties was also produced.

[Example 4]
The average particle diameter used in Example 1 was 20 parts by weight of SrZrO ₃ powder having an average particle diameter of 0.25 μm and 80 parts by weight of Ba (Zn _1/3 Ta _2/3 ) O ₃ powder having an average particle diameter of 0.5 μm. A 0.5 μm CaZrO ₃ powder was added in an amount of 2.0 vol%, and a 50 μm-thick CaZrO ₃ -containing SrZrO ₃ / BaTi ₉ O ₂₀ film was formed on the glass substrate in the same manner as in Example 1 and combined with the dielectric. A capacitor for measuring characteristics was produced.

[Example 5]
To a BaTi ₄ O ₉ powder having an average particle diameter of 0.8 μm, 3.0 vol% of CaO powder having an average particle diameter of 0.3 μm (manufactured by Kojundo Chemical Laboratory Co., Ltd.) was added. A CaO-containing BaTi ₄ O ₉ film having a thickness of 50 μm was formed thereon, and a capacitor for measuring dielectric properties was also produced.

[Example 6]
The average used in Example 5 was added to 10 parts by weight of Al ₂ O ₃ powder having an average particle diameter of 0.1 μm and 90 parts by weight of Ba (Zn _1/3 Ta _2/3 ) O ₃ powder having an average particle diameter of 0.5 μm. A CaO powder having a particle size of 0.3 μm was added in an amount of 3.0 vol%, and the CaO-containing Al ₂ O ₃ / Ba (Zn _1/3 Ta _2/3 ) having a thickness of 50 μm was then formed on the glass substrate in the same manner as in Example 1. An O ₃ film was formed, and a capacitor for measuring dielectric characteristics was produced.

[Example 7]
The SrZrO ₃ powder having an average particle diameter of 0.25 [mu] m, an average particle diameter of 0.2 [mu] m CaSnO ₃ powder of (Kojundo Chemical Laboratory Co., Ltd.) was added 5.0 vol%, the following examples 1 and glass substrate in the same manner Then, a CaO-containing SrZrO ₃ film having a thickness of 50 μm was formed, and a capacitor for measuring dielectric properties was also produced.

[Example 8]
The BaTi ₄ O ₉ powder having an average particle diameter of 0.8 [mu] m, average particle a CaSnO ₃ powder diameter 0.2μm was added 5.0 vol%, the following examples 1 in the same manner as CaSnO ₃ having a thickness of 50μm on a glass substrate A contained BaTi ₄ O ₉ film was formed, and a capacitor for measuring dielectric properties was also produced.

[Example 9]
The SrZrO ₃ powder having an average particle diameter of 0.25 [mu] m, an average particle diameter of 0.2 [mu] m CaTiO ₃ powder of (Kojundo Chemical Laboratory Co., Ltd.) was added 3.0vol%, or less Example 1 and the glass substrate in the same manner Then, a CaTiO ₃ -containing SrZrO ₃ film having a thickness of 50 μm was formed, and a capacitor for measuring dielectric characteristics was also produced.

[Example 10]
To a BaTi ₄ O ₉ powder having an average particle diameter of 0.6 μm, 3.0 vol% of CaTiO ₃ powder having an average particle diameter of 0.2 μm was added. Thereafter, in the same manner as in Example 1, a CaTiO ₃ having a thickness of 50 μm was formed on a glass substrate. A contained BaTi ₄ O ₉ film was formed, and a capacitor for measuring dielectric properties was also produced.

[Comparative Example 1]
A SrZrO ₃ film was formed in the same manner as in Example 1 except that no CaZrO ₃ powder was added in Example 1.

[Comparative Example 2]
A BaTi ₄ O ₉ film was formed in the same manner as in Example 5 except that no CaO powder was added in Example 5.

  FIG. 5 is a diagram showing characteristics of an oxide dielectric layer to which Ca oxide ceramics are added. In the figure, the hatched column indicates that no Ca oxide ceramics are added.

Referring to FIG. 5, the water absorption rate indicating the denseness of the oxide dielectric layer (less than 0.5% is acceptable), and the adhesion strength indicating adhesion to the substrate (passing ² kg / mm ² or more). )), It can be seen that all of Examples 1 to 10 and Comparative Examples 1 and 2 have a sufficient film formed in terms of film quality and mechanical strength.

Regarding dielectric properties, Comparative Examples 1 and 2 to which no Ca oxide ceramics are added have a dielectric loss of 4% to 10%, while Examples 1 to 10 to which Ca oxide ceramics are added have a dielectric loss of 0. 10%. Since it is 003% to 0.1%, it is significantly low. More specifically, the dielectric loss of Comparative Example 1 is 10%, whereas Example 1 to which 5.0 vol% of CaZrO ₃ powder is added has a dielectric loss of 0.01%, and CaZrO ₃ powder is added. It turns out that an effect is high. Similarly, the dielectric loss of Comparative Example 2 is 4%, whereas Example 5 to which 3.0 vol% of CaO powder is added has a dielectric loss of 0.05% and CaSnO ₃ powder is added by 5.0 vol%. Example 7 was 0.2%, and Example 10 in which 3.0 vol% of CaTiO ₃ powder was added was 0.1%. It can be seen that the effect of adding these Ca oxide ceramics is high.

The water absorption rate of the oxide dielectric layer was determined by immersing the substrate on which the oxide dielectric layer was formed in water for 1 hour and dividing the difference in mass before and after that by the mass of the oxide dielectric layer. A lower water absorption indicates higher density. The adhesion between the oxide dielectric layer and the substrate was measured using the Sebastian method. In the Sebastian method, a substrate on which an oxide dielectric layer is formed is fixed, and an adhesion tester is fixed to the surface of the oxide dielectric layer with an adhesive. Then, the magnitude of the pulling force per unit area (kg / mm ² ) when the adhesion tester is pulled up and the oxide dielectric layer is peeled off from the substrate is used as an index of adhesion. The greater the force, the greater the adhesion.

  The relative dielectric constant was measured by applying a high frequency voltage of 1 GHz to the electrodes of the capacitors of the examples and comparative examples. Dielectric loss was measured using a network analyzer using the perturbation method.

  Next, Examples 11 to 20 are formed by adding Mn oxide ceramics to an oxide dielectric material using a mixed injection method.

[Example 11]
4.0 vol% of MnO ₂ powder having an average particle size of 0.5 μm was added to SrZrO ₃ powder having an average particle size of 0.25 μm, and SrZrO containing MnO ₂ having a thickness of 50 μm on a glass substrate in the same manner as in Example 1. _Three films were formed, and a capacitor for measuring dielectric characteristics was also produced.

[Example 12]
To the Ba (Zn _1/3 Ta _2/3 ) O ₃ powder having an average particle size of 0.5 μm, 2.0 vol% of MnO ₂ powder having an average particle size of 0.5 μm was added. A 50 μm thick MnO ₂ -containing Ba (Zn _1/3 Ta _2/3 ) O ₃ film was formed on the substrate to produce a capacitor for measuring dielectric properties.

[Example 13]
To a Ba (Zn _1/3 Ta _2/3 ) O ₃ powder having an average particle size of 0.5 μm, 3.0 vol% of MnO powder having an average particle size of 0.5 μm (manufactured by Kojundo Chemical Laboratory Co., Ltd.) was added. In the same manner as in Example 1, a 50 μm-thick MnO-containing Ba (Zn _1/3 Ta _2/3 ) O ₃ film was formed on a glass substrate to produce a capacitor for measuring dielectric properties.

[Example 14]
To the BaTi ₄ O ₉ powder having an average particle diameter of 0.8 μm, 3.0 vol% of MnO powder having an average particle diameter of 0.5 μm was added. Thereafter, in the same manner as in Example 1, an MnO-containing BaTi having a thickness of 50 μm was formed on the glass substrate. _{A 4} O ₉ film was formed to produce a capacitor for measuring dielectric characteristics.

[Example 15]
The average particle size 0.25μm of SrZrO ₃ powder, and the average added particle Mn (manufactured by Kojundo Chemical Laboratory Co.) ₂ O ₃ powder of diameter 0.5μm to 3.0vol%, glass and in the same manner as in Example 1 A 50 μm thick SrZrO ₃ film containing Mn ₂ O ₃ was formed on the substrate to produce a capacitor for measuring dielectric properties.

[Example 16]
To the BaTi ₄ O ₉ powder having an average particle diameter of 0.8 μm, 3.0 vol% of Mn ₂ O ₃ powder having an average particle diameter of 0.5 μm was added. An Mn ₂ O ₃ -containing BaTi ₄ O ₉ film was formed to produce a capacitor for measuring dielectric properties.

[Example 17]
To the SrZrO ₃ powder having an average particle size of 0.25 μm, 3.0 vol% of Mn ₃ O ₄ powder having an average particle size of 0.5 μm was added. Thereafter, Mn ₃ having a thickness of 50 μm was formed on the glass substrate in the same manner as in Example 1. An O ₄ -containing SrZrO ₃ film was formed to produce a capacitor for measuring dielectric characteristics.

[Example 18]
To the BaTi ₄ O ₉ powder having an average particle diameter of 0.8 μm, 3.0 vol% of Mn ₃ O ₄ powder having an average particle diameter of 0.5 μm was added. A BaTi ₄ O ₉ film containing Mn ₃ O ₄ was formed to produce a capacitor for measuring dielectric properties.

[Example 19]
The SrZrO ₃ powder having an average particle diameter of 0.25 [mu] m, an average particle diameter of 0.5 [mu] m MnTiO ₃ powder of (Kojundo Chemical Laboratory Co., Ltd.) was added 3.0vol%, or less Example 1 and the glass substrate in the same manner Then, a 50 μm thick MrTiO ₃ -containing SrZrO ₃ film was formed to produce a capacitor for measuring dielectric properties.

[Example 20]
The BaTi ₄ O ₉ powder having an average particle diameter of 0.8 [mu] m, average particle a MnTiO ₃ powder diameter 0.5μm was added 3.0vol%, or less Example 1 in the same manner as MnTiO ₃ having a thickness of 50μm on a glass substrate A contained BaTi ₄ O ₉ film was formed to produce a capacitor for measuring dielectric characteristics.

[Comparative Example 3]
A BaTi ₄ O ₉ film was formed in the same manner as in Example 12 except that MnO ₂ powder was not added in Example 12.

  FIG. 6 is a diagram showing characteristics of an oxide dielectric layer to which Mn oxide ceramics are added. For convenience of explanation, Comparative Example 1 shown in FIG. 4 is shown. In the figure, the hatched column indicates that no Mn oxide ceramics are added.

  Referring to FIG. 6, with respect to the water absorption rate and the adhesion strength, it can be seen that all of Examples 11 to 20 and Comparative Examples 1 and 3 have a sufficient film formed in terms of film quality and mechanical strength.

Regarding dielectric properties, Comparative Examples 1 and 3 to which no Mn oxide ceramics are added have a dielectric loss of 10% to 15%, while Examples 11 to 20 to which Mn oxide ceramics are added have a dielectric loss of 0.2%. 005% to 0.2% is significantly lower. More specifically, while the dielectric loss of Comparative Example 1 in which the oxide dielectric material is SrZrO ₃ is 10%, MnO ₂ powder, Mn ₂ O ₃ powder, Mn ₃ O ₄ powder, MnTiO ₃ powder In Example 11, Example 15, Example 17, and Example 19, respectively, were added, and the dielectric loss was 0.01%, 0.01%, 0.1%, and 0.2%. It can be seen that the dielectric loss is greatly reduced to 1/1000 to 1/50 by the addition of oxide ceramics.

Further, while the dielectric loss of Comparative Example 3 in which the oxide dielectric material is Ba (Zn _1/3 Ta _2/3 ) O ₃ is 15%, MnO ₂ powder and MnO powder were added respectively. In Examples 12 and 13, the dielectric loss is 0.05% and 0.005%, and the addition of these Mn oxide ceramics significantly reduces the dielectric loss to 1/3000 to 1/300. I understand that.

  Hereinafter, Examples 21 to 23 and Comparative Examples 4 and 5 are examples in which the addition amount of Ca oxide ceramics is varied.

[Example 21 to Example 23]
A CaZrO ₃ -containing SrZrO ₃ film and a capacitor were formed in the same manner as in Example 1 except that the following amount of the CaZrO ₃ powder having an average particle diameter of 0.5 μm of Example 1 was added.

Example 21: 0.2 vol%
Example 22: 1.0 vol%
Example 23: 15.0 vol%
[Comparative Examples 4 and 5]
A CaZrO ₃ -containing SrZrO ₃ film and a capacitor were formed in the same manner as in Example 1 except that the following amount of the CaZrO ₃ powder having an average particle diameter of 0.5 μm of Example 1 was added.

Comparative Example 4: 0.05 vol%
Comparative Example 5: 25.0 vol%
FIG. 8 is a diagram showing the characteristics of oxide dielectric layers with different amounts of Ca oxide ceramic added. In the drawing, the first embodiment shown in FIG. 5 is shown for convenience of explanation.

  Referring to FIG. 8, with respect to the water absorption rate and the adhesion strength, all of Examples 21, 21 to 23 and Comparative Examples 4 and 5 are sufficiently formed in terms of film quality and mechanical strength. I understand.

Regarding the dielectric properties, Comparative Examples 4 and 5 have a dielectric loss of 2% to 5%, whereas the amount of CaZrO ₃ powder added is 0.2 vol% (Example 21) to 15 vol% (Example 23). It can be seen that it is significantly low, from 0.01% to 0.1%. Therefore, the dielectric loss can be reduced by setting the addition amount within this range.

Furthermore, from the dielectric loss values of Example 21 and Comparative Example 4, Example 23 and Comparative Example 5, it is considered that the amount of CaZrO ₃ powder added can be expanded to 0.1 vol% to 20 vol%.

  Examples 24 to 26 are examples in which a method of dissolving an oxide dielectric material and a Ca oxide ceramic in advance, a simultaneous injection method, and an alternate injection method are used instead of the mixed injection method.

[Example 24]
To the SrZrO ₃ powder having an average particle size of 0.25 μm, 5.0 vol% of CaZrO ₃ powder (manufactured by Sakai Chemical Co., Ltd.) having an average particle size of 0.5 μm was added and stirred with a commercially available mixer to obtain a mixed powder. This mixed powder was placed in an alumina crucible and heat-treated in the atmosphere (1000 ° C., 5 hours). The heat-treated powder was pulverized for 10 hours using a commercially available ball mill to obtain a solid-solubilized powder having an average particle size of 0.5 μm. In the same manner as in Example 1, a CaZrO ₃ -containing SrZrO ₃ film and a capacitor were formed from this powder on a glass substrate.

[Example 25]
Using the film forming apparatus shown in FIG. 3, and SrZrO ₃ powder having an average particle diameter of 0.25 [mu] m, CaZrO ₃ powder having an average particle diameter of 0.5μm each aerosol generator 11A, filled into 11B, the aerosol generator 11A Set a high purity nitrogen gas (purity 99.9%) at a pressure of 19.6 Pa as a carrier gas (flow rate: 8 L / min), and the aerosol generator 11B has a high purity nitrogen gas (purity 99.99%). 9%) was introduced as a carrier gas (flow rate: 2 L / min). Aerosol was sprayed from the nozzles 20A and 20B for 30 minutes to form a CaZrO ₃ -containing SrZrO ₃ film and a capacitor having a thickness of 50 μm on the glass substrate.

[Example 26]
Using the film forming apparatus shown in FIG. 3, and SrZrO ₃ powder having an average particle diameter of 0.25 [mu] m, CaZrO ₃ powder having an average particle diameter of 0.5μm each aerosol generator 11A, filled into 11B, the aerosol generator 11A Set a high purity nitrogen gas (purity 99.9%) at a pressure of 19.6 Pa as a carrier gas (flow rate: 8 L / min), and the aerosol generator 11B has a high purity nitrogen gas (purity 99.99%). 9%) was introduced as a carrier gas (flow rate: 2 L / min). Aerosol was alternately ejected from the respective nozzles 20A and 20B every 5 minutes for a total of 30 minutes to form a CaZrO ₃ -containing SrZrO ₃ film and a capacitor having a thickness of 50 μm on the glass substrate.

  FIG. 8 is a diagram showing the characteristics of oxide dielectric layers formed by different methods. In the drawing, the first embodiment shown in FIG. 5 is shown for convenience of explanation.

  Referring to FIG. 8, with respect to the water absorption rate and the adhesion strength, it can be seen that all of Examples 1 and 24 to 26 are sufficiently formed in terms of film quality and mechanical strength.

  The dielectric properties are 0.01% to 0.07%, which is substantially the same as in Example 1 and Examples 24 to 26. The mixed injection method, the method of dissolving in advance, the simultaneous injection method, and the alternating injection method are the same. Of these, it can be seen that any method is used to provide good results. In FIG. 7, it can be seen that the mixed injection method and the method of dissolving in advance are particularly excellent.

  The preferred embodiments of the present invention have been described in detail above, but the present invention is not limited to the specific embodiments, and various modifications and changes can be made within the scope of the present invention described in the claims. It can be changed.

In addition, the following additional notes are disclosed regarding the above description.
(Appendix 1) A circuit board in which an oxide dielectric layer and a conductor layer are laminated,
The oxide dielectric layer is deposited by spraying an aerosolized fine particle material, and includes an oxide dielectric material and an oxygen deficiency preventing agent for preventing oxygen deficiency of the oxide dielectric material. A circuit board.
(Additional remark 2) The said conductor layer is a continuous film which consists of a metal or an alloy material, The circuit board of Additional remark 1 characterized by the above-mentioned.
(Supplementary Note 3) The oxide dielectric layer;
Having an oxide layer sandwiched between the oxide dielectric layers and an electrode layer made of a part of the conductor layer,
The oxide dielectric material is TiO ₂ , BaTiO ₃ , BaSrTiO ₃ , BaTiZrO ₃ , BaTi ₄ O ₉ , Ba ₂ Ti ₉ O ₂₀ , Ba (Mg _1/3 Ta _2/3 ) O ₃ , Ba (Zn ₁ Supplementary note 1 or 2, characterized in that it contains at least one of the group consisting of _{/ 3} Ta _2/3 ) O ₃ , Ba (Zn _1/3 Nb _2/3 ) O ₃ , and ZrSnTiO _4. Circuit board.
(Appendix 4) The oxygen deficiency inhibitor is an oxidizing agent having an oxygen atom,
Content of the said oxidizing agent is set to the range of 0.1 volume%-15 volume%, The circuit board as described in any one of Additional remarks 1-3 characterized by the above-mentioned.
(Additional remark 5) The average particle diameter of the said oxide dielectric material is set to the range of 10 nm-10 micrometers, The circuit board as described in any one of Additional remarks 1-4 characterized by the above-mentioned.
(Additional remark 6) The said oxidizing agent is Ca oxide ceramics or Mn oxide ceramics, The circuit board of Additional remark 4 or 5 characterized by the above-mentioned.
(Supplementary Note 7) The Ca oxide ceramics CaO, CaTiO _3, CaZrO _3, and the circuit board according to Note 6 Claims, characterized in that it comprises at least one of the group consisting of CaSnO _3.
(Supplementary Note 8) The Mn oxide ceramics _{MnO, MnO 2, Mn 2 O} 3, Mn 3 O 4, and the circuit board according to Supplementary Note 6, wherein the at least one of the group consisting of MnTiO _3.
(Additional remark 9) It has the oxide dielectric layer formed by spraying the aerosol-formed fine particle material,
The passive component, wherein the oxide dielectric layer includes an oxide dielectric material and an oxygen deficiency preventing agent for preventing oxygen deficiency of the oxide dielectric material.
(Additional remark 10) It is a manufacturing method of the circuit board formed by laminating | stacking an oxide dielectric material layer and a conductor layer,
Forming an oxide dielectric layer by aerosolizing an oxide dielectric material made of fine particles and an oxygen deficiency preventive agent and spraying it on the substrate.
(Additional remark 11) It is a manufacturing method of the circuit board formed by laminating | stacking an oxide dielectric material layer and a conductor layer,
Mixing an oxide dielectric material comprising fine particles and an oxygen deficiency inhibitor to form a fine particle mixture;
Forming the oxide dielectric layer by aerosolizing the fine particle mixture and spraying the mixture onto the substrate.
(Additional remark 12) It is a manufacturing method of the circuit board formed by laminating | stacking an oxide dielectric material layer and a conductor layer,
Forming an oxide dielectric layer by spraying an oxide dielectric material made of fine particles and an oxygen deficiency preventing agent simultaneously or alternately from different spray nozzles.

It is principal part sectional drawing of the circuit board which concerns on embodiment of this invention. It is a schematic block diagram of the film-forming apparatus by AD method used for this invention. It is a schematic block diagram of the other film-forming apparatus by AD method used for this invention. It is sectional drawing of the multilayer ceramic capacitor which concerns on other embodiment of this invention. It is a figure which shows the characteristic (the 1) of the oxide dielectric material layer which added Ca oxide ceramics. It is a figure which shows the characteristic of the oxide dielectric material layer which added Mn oxide ceramics. It is a figure which shows the characteristic (the 2) of the oxide dielectric material layer which added Ca oxide ceramics. It is a figure which shows the characteristic of the oxide dielectric material layer from which a formation method differs.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Circuit board 11 Base board 12 Lower wiring layer 13 Capacitor layer 14 Upper wiring layer 15 1st conductor layer 16 1st interlayer insulation layer 17, 20, 26 Via 18 2nd conductor layer 19 2nd interlayer insulation layer 21 1st Electrode layer 22 Dielectric layer 23 Second electrode layer 24 Third interlayer insulating layer 25 Third conductor layer 27 Capacitor 28 Spiral inductor 30 Multilayer ceramic capacitor 31 First external electrode layer 32 Second external electrode layer 50, 70 AD film formation apparatus

Claims (7)

A circuit board in which an oxide dielectric layer and a conductor layer are laminated,
The oxide dielectric layer;
Having an oxide layer sandwiched between the oxide dielectric layers and an electrode layer made of a part of the conductor layer,
The oxide dielectric layer is deposited by spraying aerosolized fine particle material, and includes an oxide dielectric material, and an oxygen deficiency preventing agent for preventing oxygen deficiency of the oxide dielectric material,
The capacitor is formed without performing a heat treatment after depositing the oxide dielectric layer,
The oxide dielectric material is TiO ₂ , BaTiO ₃ , BaSrTiO ₃ , BaTiZrO ₃ , BaTi ₄ O ₉ , Ba ₂ Ti ₉ O ₂₀ , Ba (Mg _1/3 Ta _2/3 ) O ₃ , Ba (Zn _{1 / 3} Ta _2/3 ) O ₃ , Ba (Zn _1/3 Nb _2/3 ) O ₃ , and a circuit board comprising at least one selected from the group consisting of ZrSnTiO ₄ . The oxygen deficiency inhibitor is an oxidizing agent having an oxygen atom;
2. The circuit board according to claim 1, wherein the content of the oxidizing agent is set in a range of 0.1 volume% to 15 volume%.   The circuit board according to claim 2, wherein the oxidizing agent is Ca oxide ceramics or Mn oxide ceramics. An oxide dielectric layer deposited by spraying aerosolized particulate material;
A capacitor composed of an electrode layer composed of a part of the conductor layer with the oxide dielectric layer sandwiched therebetween,
The oxide dielectric layer includes an oxide dielectric material and an oxygen deficiency preventing agent for preventing oxygen deficiency of the oxide dielectric material,
The capacitor is formed without performing a heat treatment after depositing the oxide dielectric layer,
The oxide dielectric material is TiO ₂ , BaTiO ₃ , BaSrTiO ₃ , BaTiZrO ₃ , BaTi ₄ O ₉ , Ba ₂ Ti ₉ O ₂₀ , Ba (Mg _1/3 Ta _2/3 ) O ₃ , Ba (Zn _{1 / 3} Ta _2/3 ) O ₃ , Ba (Zn _1/3 Nb _2/3 ) O ₃ , and a passive component comprising at least one of the group consisting of ZrSnTiO ₄ . A method of manufacturing a circuit board in which an oxide dielectric layer and a conductor layer are laminated,
The circuit board has a capacitor comprising the oxide dielectric layer and an electrode layer sandwiching the oxide dielectric layer and comprising a part of the conductor layer,
Forming an oxide dielectric material layer and forming an oxide dielectric layer by aerosolizing an oxide dielectric material made of fine particles and an oxygen deficiency preventive agent and spraying it on a substrate;
The step of forming the oxide dielectric layer is a step in which heat treatment is not performed after the oxide dielectric layer is deposited,
The oxide dielectric material is TiO ₂ , BaTiO ₃ , BaSrTiO ₃ , BaTiZrO ₃ , BaTi ₄ O ₉ , Ba ₂ Ti ₉ O ₂₀ , Ba (Mg _1/3 Ta _2/3 ) O ₃ , Ba (Zn _{1 / 3} Ta _2/3 ) O ₃ , Ba (Zn _1/3 Nb _2/3 ) O ₃ , and ZrSnTiO ₄ , which contains at least one of the groups Method. A method of manufacturing a circuit board in which an oxide dielectric layer and a conductor layer are laminated,
The circuit board has a capacitor comprising the oxide dielectric layer and an electrode layer sandwiching the oxide dielectric layer and comprising a part of the conductor layer,
Mixing an oxide dielectric material comprising fine particles and an oxygen deficiency inhibitor to form a fine particle mixture;
Aerosolizing the particulate mixture and spraying the substrate to form an oxide dielectric layer,
The step of forming the oxide dielectric layer is a step in which heat treatment is not performed after the oxide dielectric layer is deposited,
The oxide dielectric material is TiO ₂ , BaTiO ₃ , BaSrTiO ₃ , BaTiZrO ₃ , BaTi ₄ O ₉ , Ba ₂ Ti ₉ O ₂₀ , Ba (Mg _1/3 Ta _2/3 ) O ₃ , Ba (Zn _{1 / 3} Ta _2/3 ) O ₃ , Ba (Zn _1/3 Nb _2/3 ) O ₃ , and ZrSnTiO ₄ , which contains at least one of the groups Method. A method of manufacturing a circuit board in which an oxide dielectric layer and a conductor layer are laminated,
The circuit board has a capacitor comprising the oxide dielectric layer and an electrode layer sandwiching the oxide dielectric layer and comprising a part of the conductor layer,
Forming an oxide dielectric layer by spraying an oxide dielectric material made of fine particles and an oxygen deficiency inhibitor simultaneously or alternately from different spray nozzles,
The step of forming the oxide dielectric layer is a step in which heat treatment is not performed after the oxide dielectric layer is deposited,
The oxide dielectric material is TiO ₂ , BaTiO ₃ , BaSrTiO ₃ , BaTiZrO ₃ , BaTi ₄ O ₉ , Ba ₂ Ti ₉ O ₂₀ , Ba (Mg _1/3 Ta _2/3 ) O ₃ , Ba (Zn _{1 / 3} Ta _2/3 ) O ₃ , Ba (Zn _1/3 Nb _2/3 ) O ₃ , and ZrSnTiO ₄ , which contains at least one of the groups Method.

Images