JP4469066B2 - Method for obtaining specific resistance distribution and method for detecting damage position of impermeable layer - Google Patents
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Description
【0001】
【発明の属する技術分野】
本発明は、地盤又は埋立地の比抵抗分布及び遮水構造物の遮水層の損傷位置検知方法に関するものである。
【0002】
【従来の技術】
地盤又は埋立地の比抵抗分布を求める方法には、測定電極を密に配置して、四電極法などにより直接測定する方法、密に配置した各測定電極の接地抵抗を測定して測定電極周辺の比抵抗を求めることにより得る方法がある。
また、遮水構造物である埋立地の遮水層を例にとると、従来の遮水層の損傷位置検知方法は、電気的に高抵抗の遮水層を挟んで設置した給電電極間(例えば、埋立地内外間)に電流を流し、遮水層の上又は下、あるいは2重遮水層構造の場合の遮水層間に発生する電位分布を測定する。そして、損傷位置を中心に発生する電位歪から遮水層の損傷位置を検知するものであった。
【0003】
【本発明が解決しようとする課題】
前記した従来の比抵抗分布を求める方法にあっては、次のような問題点がある。
<イ>比抵抗分布を正確に直接求めるためには、測定電極を密に配置する必要がある。このため、測定電極の設置に費用と時間がかかる。
<ロ>測定電極を配置した範囲の端の部分の誤差が大きくなるため、特に端の部分の電極密度を高くする必要がある。埋立地に適用する場合は、埋立の進行に伴い測定範囲が広くなるため、常に端になる部分の電極が密になるような電極配置にするには、広い範囲で電極を密に配置するする必要がある。
<ハ>測定範囲の形状が複雑な場合(最終処分場など)、測定誤差が大きくなる問題がある。
【0004】
前記した従来の遮水層の損傷位置検知方法にあっては、次のような問題点がある。
<イ>埋立地内に廃棄物が埋め立てられている場合は、埋立破棄物の物質及びその分布等の不均一性によって電位分布が影響を受ける。この結果、損傷位置を中心に発生する電位歪も影響を受け、誤差が大きくなる場合もある。
<ロ>上記の問題は、給電電極の位置、埋立地の形状の違いによっても生じる。
<ハ>埋立中の埋立地では、埋立の進行に伴い、埋立地内の電気的条件(例えば比抵抗分布)が日々変化するため、固定したモデルで解くと、埋立の進行に伴い誤差が大きくなり、精度良く遮水層の損傷位置を検知できなくなる可能性がある。
【0005】
【本発明の目的】
本発明は上記したような従来の問題を解決するためになされたもので、地盤又は埋立地の比抵抗分布を精度良く求めることを目的とする。
または、精度良く求めた比抵抗分布を使用して遮水構造物の遮水層の損傷位置を精度良く検知することを目的とする。
または、内外の導電性の不均一性、給電電極の位置による電位分布の影響、遮水構造物の形状による電位分布の影響などの背景電位分布による影響を受けずに精度良く遮水層の損傷位置を検知することを目的とする。
または、埋立中の埋立地の場合、埋立の進行に伴い、埋立地内の電気的条件が日々変化する。これによる電位分布の影響を受けずに精度良く遮水層の損傷位置を検知することを目的とする。
本発明は、これらの目的の少なくとも一つを達成するものである。
【0006】
【課題を解決するための手段】
上記のような目的を達成するために、本発明の遮水層の損傷位置検知方法は、電気的に高抵抗の遮水層の損傷位置検知方法において、遮水層を境にして地中の一方の側の少なくとも2箇所に給電電極を設置し、給電電極間に電流を流して地盤又は埋立地の地中の電位分布を測定する予備測定工程と、
地盤又は埋立地と同一形状の解析モデルにおける比抵抗分布の初期値を仮定し、この比抵抗分布に前記予備測定工程時の地盤又は埋立地の電流を与えて算出される地中の電位分布と、前記予備測定工程で測定した地中の電位分布と、を比較し、比較した結果を基に比抵抗分布の初期値を変更し、算出した電位分布が予備測定工程で測定した電位分布とほぼ同一の分布となるような遮水層近傍の比抵抗分布を算出し、遮水層間に電流を流したと仮定して、前記比抵抗分布から遮水層近傍の電位分布を算出する解析工程と、解析工程と順序を問わない本測定工程であって、遮水層間に電流を流して遮水層近傍に発生する電位分布を測定する本測定工程と、解析工程で算出した電位分布と、本測定工程で測定した電位分布との差から差分電位分布を作成する比較工程と、差分電位分布から損傷の有無ならびにその位置を推定する推定工程とからなるものである。
【0007】
【本発明の実施の形態】
以下図1を参照しながら本発明の比抵抗分布を求める方法の実施の形態について説明する。
【0008】
<イ>予備測定工程
予備測定工程は、地盤又は埋立地の電位分布を測定する工程である。
電位分布の測定は、例えば地盤又は埋立地に所定の間隔で設置した電位測定電極4で行う。電位測定電極4は、例えば縦横等間隔の格子状であって、深度方向に間隔をおいて複数段設置する。
ここで、電位分布の測定時の地盤又は埋立地の電流を把握しておく必要がある。このため、例えば給電電極2間に既知の電流を流して、電位測定電極4で電位分布の測定をする。また、地盤又は埋立地に存在する自然電流等を利用してもよい。
電位分布の測定は、例えば給電電極2の間に電流を流し、電位測定電極4と基準電極8との電位差として測定することによりおこなう。給電電極2の間に流す電流としては、例えば交番電流、交流電流等を使用する。
【0009】
<ロ>算出工程
算出工程は、予備測定工程時の電位分布を基に地盤又は埋立地の比抵抗の分布(以下、比抵抗分布という)を算出する工程である。
最初に、地盤70と同一形状の解析モデルを作成する。そして、解析モデル上に比抵抗分布の初期値を与える。
次に、比抵抗分布の初期値を与えた解析モデルにおいて、例えば給電電極間に電流を流したと仮定して地盤70の電位分布を算出する。
この算出した電位分布と前記予備測定工程時に測定した電位分布とを比較して、電位分布が異なる部分の比抵抗の初期値を補正する。
そして、算出した電位分布が予備測定工程時の電位分布とほぼ同一の分布となるような比抵抗分布を算出する。
【0010】
以下図面を参照しながら本発明の遮水層の損傷位置検知方法の実施の形態について説明する。
【0011】
<イ>給電電極及び電位測定電極の設置
以下、図2を参照して説明する。
遮水構造物は、一般廃棄物あるいは産業廃棄物の埋立地、貯水池などの遮水構造を有するものであれば良く、実施例では埋立地を例にとる。
埋立予定地の地盤を掘削して、その底面と側面に電気的に高抵抗の遮水層1を敷設する。遮水層には例えばゴムシート等を使用する。
遮水層1の近傍には所定の間隔で電位測定電極4を設置する。ここで、遮水層近傍とは遮水層1の近くであればよく、遮水層1に接していてもよい。例えば、縦横等間隔の格子状に設置する。
遮水層1の電位測定電極4を設置した側に、少なくとも2個の内部給電電極(21、22)を設置する。
そして、例えば埋立地7の外部には外部給電電極31を設置する。
また、埋立地7の内部と外部にはそれぞれ内部基準電極20と外部基準電極30を設置するのが望ましい。
なお、図2では遮水層1の上面に電位測定電極4を設置してあるが、遮水層1の下面に設置しても良い。
【0012】
<ロ>比抵抗分布
遮水層近傍の比抵抗分布を求める。
例えば、最初に遮水層1を境にして一方の側に電流を流し、遮水層1の近傍に発生する電位分布を測定する。
電位分布の測定は、例えば内部給電電極(21、22)の間に電流を流し、遮水層1の近傍に発生する電位分布を、電位測定電極4と内部基準電極20との電位差として測定することによりおこなう。ここで、外部基準電極30を内部基準電極20に替えて用いても、基準電極を使わず電位測定電極間の電位差として電位分布を測定してもよい。
内部給電電極(21、22)の間に流す電流としては、例えば交互に極性が替る交番電流、交流電流等を使用する。
遮水層を境にして一方の側のみに設置した給電電極間(例えば、内部給電電極間)に給電した場合、遮水層の損傷の有無に影響されずに電位分布を求めることができる。これは、損傷部を通過する電流が埋立地7内を流れる電流に比べて非常に小さいためである。
【0013】
上記の方法で測定した電位分布に一致するように遮水層近傍の比抵抗分布を求める。
比抵抗分布の算出方法は、例えば埋立地7と同一形状の埋立地(以下、解析モデルという)を想定し、上記の電位分布を測定したと同様に内部給電電極間に電流を流したと仮定し、測定した電位分布とほぼ同一の電位分布を示すように比抵抗分布を求める。
【0014】
<ハ>解析工程
解析工程は、上記のようにして算出した比抵抗分布を持った解析モデルを使用して遮水層1の近傍の電位分布を算出する工程である。
例えば解析モデル上で、図3に示すような内部給電電極21と外部給電電極31間に電流を流したと仮定し、遮水層近傍の比抵抗分布によって発生する電位分布を算出する。
【0015】
<ニ>本測定工程
本測定工程は、遮水層1の間に電流を流し、遮水層1の近傍に発生した電位分布を測定する工程である。
例えば図3のように内部給電電極21(又は22)と外部給電電極31間に給電して電位測定電極4にて電位分布を測定する。
図4に本測定工程時の測定した電位分布の等電位線図の一例を示す。
【0016】
<ホ>損傷位置の推定
上記の解析工程時の算出した電位分布と本測定工程時の測定した電位分布を使用して損傷位置の推定をおこなう。なお、解析工程と本測定工程の順序は、どちらが先であっても、同時であってもよい。
上記の解析工程時の電位分布と本測定工程時の電位分布の差を差分電位分布とする。
図5に差分電位分布の等電位線図の一例を示す。
ここで、差分電位分布の等電位線が密に図示される位置が損傷位置と推定される。例えば、差分電位分布の等電位線図を作成して、くぼみ状(又は凸状)となる部分が存在すればくぼみの最も低い位置(又は高い位置)が損傷位置と推定される。
【0017】
【実施例1】
【0018】
<イ>電位分布の測定
電位分布の測定は、地盤又は埋立地に例えば5〜30mのピッチで格子状に設置した電位測定電極4でおこなう。
給電電極間には、例えば一定間隔で一定時間電流が流れない状態が現れ、極性が替る波形を有する交番電流を流す。
【0019】
<ロ>比抵抗分布の算出
最初に、地盤70又は埋立地7と同一形状の解析モデルを作成する。そして、解析モデル上の例えば遮水層1に該当する近傍の埋立地内部に比抵抗分布の初期値を与える。
次に、比抵抗分布の初期値を与えた解析モデルにおいて、給電電極間に電流を流したと仮定して、遮水層近傍の電位分布を算出する。この結果を解析結果による電位とする。
この解析結果による電位と、本測定工程時の電位分布の電位とを比較して、以下の式で比抵抗分布の初期値を補正する。
【0020】
【式1】
【0021】
この比抵抗の補正は地盤又は埋立地の複数の点に対して行う。また、解析結果の電位分布と本測定工程時の電位分布が一致するまで、必要に応じて繰り返し行う。こうして算出した比抵抗分布を設定した解析モデルによって例えば遮水層近傍の電位分布を算出する。
【0022】
<ハ>損傷位置の推定
遮水層1の間に電流を流し、遮水層1の近傍に発生した電位分布を測定する。
本測定工程時の電位分布から解析工程時の電位分布を引いて差分電位分布とする。
内部給電電極を+とし、外部給電電極を−とした差分電位分布図上で最も電位が低い位置が損傷の中心位置と推定できる。
この最も電位が低い位置を推定する方法として、以下の方法が使用できる。
第1の方法として、損傷位置と仮定して損傷周辺の電位変化を示す理論式に当てはめて求めた理論値と、前記差分電位分布との平均二乗誤差を求め、この誤差が最も小さくなる損傷位置を特定する方法が利用できる。
ここで、理論式を以下に示す。
【0023】
【式2】
【0024】
第2の方法として、数値シミュレーション解析から求めた電位分布と、前記差分電位分布との一致性から損傷位置を特定する方法が利用できる。
【0025】
【実施例2】
遮水層を2重構造にする場合の実施例について以下に説明する。
<イ>外部給電電極を遮水層の内部に設置する場合
図6に概要図を示す。
この場合、外部給電電極31と外部基準電極30を上部遮水層11と下部遮水層12に囲まれた範囲に設置する。
こうする事によって、上部遮水層11が損傷した場合にその位置を検知することが可能となる。
なお、内部給電電極と電位測定電極を下部遮水層12の下方に設置した場合は、下部遮水層12の損傷位置を検知することができる。
【0026】
<ロ>給電電極と電位測定電極を遮水層の内部に設置する場合
図7に概要図を示す。
この場合、埋立地7の内側と外側の両方に給電電極(33、35)と基準電極(32、34)を設置する。
この場合は、上部遮水層11の損傷位置も下部遮水層12の損傷位置も別々に検知することができる。
【0027】
<ハ>その他の場合
図2に示す遮水層を2重構造にすることも当然可能である。こうする事によって、上部遮水層11と下部遮水層12の両方が破損した場合に、上部遮水層11の損傷位置を検知することができる。
また、図2に示す遮水層を2重構造とし、外部給電電極31を埋立地内部に、内部給電電極(21、22)及び電位測定電極4を埋立地外部の下部遮水層12の近傍に設置することもできる。こうする事によって、上部遮水層11と下部遮水層12の両方が破損した場合に、下部遮水層12の損傷位置を検知することができる。
【0028】
【本発明の効果】
本発明の比抵抗分布を求める方法は以上説明したようになるから次のような効果を得ることができる。
<イ>測定した電位分布と算出する電位分布が一致するような比抵抗分布を求める。このため、地盤又は埋立地の比抵抗分布を精度良く求めることができる。
<ロ>従来の方法に比べて測定電極の数を増やしたりしなくても、精度良く比抵抗分布を求めることができる。従って、精度を向上させるための測定器の設置に、費用と時間をかけなくてもよい。
【0029】
また、本発明の遮水層の損傷位置検知方法は以上説明したようになるから次のような効果を得ることができる。
<イ>遮水構造物の遮水層の損傷位置を精度良く検知することができる。
<ロ>損傷位置を推定する前に、内外の導電性の不均一性、給電電極の位置による電位分布の影響、遮水構造物の形状による電位分布の影響などの背景電位分布による影響を取り除く。このため、精度よく遮水層の損傷位置を検知できる。
<ハ>従来の方法に比べて測定電極の数を増やしたりしなくても、精度良く遮水層の損傷位置を検知できる。従って、精度を向上させるために、埋立地の建設費を増加させることがない。
<ニ>形状が複雑な埋立地に適用した場合でも測定電極を増やすことなく精度良く遮水層の損傷位置を検知できる。
<ホ>埋立中の埋立地に適用した場合でも、埋立の進行に伴う電気的な特性変化に影響されずに精度良く遮水層の損傷位置を検知できる。
【図面の簡単な説明】
【図1】本発明の比抵抗分布を求める場合の概要図
【図2】本発明の内部給電電極間に給電する場合の概要図
【図3】内部給電電極と外部給電電極間に給電する場合の概要図
【図4】測定した電位分布の等電位線図の一表示例
【図5】差分電位分布の等電位線図の一表示例
【図6】遮水層が2重構造で外部給電電極を遮水層の内部に設置する場合の実施例の概要図
【図7】遮水層が2重構造で給電電極と電位測定電極を遮水層の内部に設置する場合の実施例の概要図[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a specific resistance distribution of a ground or a landfill and a damage position detection method for a water shielding layer of a water shielding structure.
[0002]
[Prior art]
The specific resistance distribution of the ground or landfill can be obtained by placing the measurement electrodes densely and measuring directly by the four-electrode method, or by measuring the ground resistance of each of the densely arranged measurement electrodes and surrounding the measurement electrodes There is a method obtained by obtaining the specific resistance.
In addition, taking a water-impervious layer in a landfill as an example, a conventional method for detecting a damage position of a water-impervious layer is a method for detecting the position of a water-impervious layer between power supply electrodes installed with a water-impervious layer electrically sandwiched between ( For example, a current is passed between the inside and outside of the landfill, and the potential distribution generated above or below the water shielding layer or between the water shielding layers in the case of a double water shielding layer structure is measured. Then, the damage position of the water shielding layer is detected from the potential distortion generated around the damage position.
[0003]
[Problems to be solved by the present invention]
The conventional method for obtaining the specific resistance distribution has the following problems.
<A> In order to obtain the specific resistance distribution accurately and directly, it is necessary to arrange the measurement electrodes densely. For this reason, it takes cost and time to install the measurement electrode.
<B> Since the error in the end portion in the range where the measurement electrodes are arranged increases, it is necessary to increase the electrode density particularly in the end portion. When applied to landfills, the measurement range becomes wider as landfill progresses, so in order to arrange the electrodes so that the electrodes at the end always become dense, arrange the electrodes densely in a wide range. There is a need.
<C> When the shape of the measurement range is complicated (such as the final disposal site), there is a problem that the measurement error increases.
[0004]
The conventional method for detecting the damage position of the water shielding layer has the following problems.
<I> When waste is landfilled in the landfill, the potential distribution is affected by non-uniformity of the material of the landfill waste and its distribution. As a result, the potential distortion generated around the damaged position is also affected, and the error may increase.
<B> The above problem is also caused by the difference in the position of the feeding electrode and the shape of the landfill.
<C> In landfills during landfill, the electrical conditions (for example, resistivity distribution) in the landfill change daily as landfill progresses. Therefore, when solving with a fixed model, errors increase as landfill progresses. There is a possibility that the damage position of the water shielding layer cannot be detected accurately.
[0005]
[Object of the present invention]
The present invention has been made in order to solve the conventional problems as described above, and an object thereof is to accurately obtain the specific resistance distribution of the ground or landfill.
Or it aims at detecting the damage position of the water shielding layer of a water shielding structure with high precision using the specific resistance distribution calculated | required with high precision.
Or damage to the water shielding layer with high accuracy without being affected by the background potential distribution, such as non-uniformity of conductivity inside and outside, influence of potential distribution due to the position of the feeding electrode, and influence of potential distribution due to the shape of the water shielding structure The purpose is to detect the position.
Or, in the case of a landfill during landfill, the electrical conditions in the landfill change daily with the progress of landfill. An object of the present invention is to detect the damage position of the water shielding layer with high accuracy without being affected by the potential distribution.
The present invention achieves at least one of these objects.
[0006]
[Means for Solving the Problems]
In order to achieve the above object, the method for detecting a damage position of a water shielding layer according to the present invention is a method for detecting a damage position of a water shielding layer having an electrically high resistance. Preliminary measurement step of installing power supply electrodes in at least two places on one side and passing a current between the power supply electrodes to measure the potential distribution in the ground or landfill,
Assuming the initial value of the resistivity distribution in the analysis model of the same shape as the ground or landfill, the ground potential distribution calculated by giving the current of the ground or landfill during the preliminary measurement process to this resistivity distribution The potential distribution in the ground measured in the preliminary measurement step is compared, the initial value of the specific resistance distribution is changed based on the comparison result, and the calculated potential distribution is almost the same as the potential distribution measured in the preliminary measurement step. An analysis step of calculating a specific resistance distribution near the water shielding layer so as to have the same distribution, and calculating a potential distribution near the water shielding layer from the specific resistance distribution, assuming that a current flows between the water shielding layers. The main measurement process, regardless of the order of the analysis process, the main measurement process for measuring the potential distribution generated in the vicinity of the impermeable layer by passing a current between the impermeable layers, the potential distribution calculated in the analysis process, The differential potential distribution is calculated from the difference from the potential distribution measured in the measurement process. A comparison step of forming, is made of the estimated step of estimating the presence or absence and the position of the damage from the difference potential distribution.
[0007]
[Embodiments of the Invention]
Hereinafter, an embodiment of a method for obtaining a specific resistance distribution according to the present invention will be described with reference to FIG.
[0008]
<A> Preliminary measurement process The preliminary measurement process is a process of measuring the potential distribution of the ground or landfill.
The potential distribution is measured by, for example, the
Here, it is necessary to grasp the current of the ground or landfill when measuring the potential distribution. For this reason, for example, a known current is passed between the
The potential distribution is measured, for example, by passing a current between the
[0009]
<B> Calculation step The calculation step is a step of calculating a specific resistance distribution (hereinafter referred to as a specific resistance distribution) of the ground or landfill based on the potential distribution during the preliminary measurement step.
First, an analysis model having the same shape as the
Next, in the analysis model given the initial value of the specific resistance distribution, for example, the potential distribution of the
The calculated potential distribution is compared with the potential distribution measured in the preliminary measurement step, and the initial value of the specific resistance of the portion where the potential distribution is different is corrected.
Then, a specific resistance distribution is calculated such that the calculated potential distribution is substantially the same as the potential distribution in the preliminary measurement process.
[0010]
Embodiments of a method for detecting a damage position of a water shielding layer of the present invention will be described below with reference to the drawings.
[0011]
<A> Installation of feeding electrode and potential measurement electrode Hereinafter, description will be given with reference to FIG.
The water-impervious structure may be anything having a water-impervious structure such as a landfill for general waste or industrial waste, a reservoir, and the landfill is taken as an example in the embodiment.
The ground of the planned landfill site is excavated, and an electrically high resistance
In the vicinity of the
At least two internal feeding electrodes (21, 22) are installed on the side of the
For example, an external
Moreover, it is desirable to install an
In FIG. 2, the
[0012]
<B> Specific resistance distribution The specific resistance distribution near the impermeable layer is obtained.
For example, first, a current is passed through one side of the
The potential distribution is measured by, for example, passing a current between the internal feeding electrodes (21, 22) and measuring the potential distribution generated in the vicinity of the
As the current flowing between the internal power supply electrodes (21, 22), for example, an alternating current, an alternating current, or the like whose polarity is alternately changed is used.
When power is supplied between power supply electrodes (for example, between internal power supply electrodes) installed only on one side with the water shielding layer as a boundary, the potential distribution can be obtained without being affected by the presence or absence of damage to the water shielding layer. This is because the current passing through the damaged portion is much smaller than the current flowing in the
[0013]
The specific resistance distribution in the vicinity of the water shielding layer is obtained so as to coincide with the potential distribution measured by the above method.
The specific resistance distribution calculation method assumes, for example, a landfill having the same shape as the landfill 7 (hereinafter referred to as an analytical model), and assumes that a current flows between the internal feeding electrodes in the same manner as the above-described potential distribution was measured. Then, a specific resistance distribution is obtained so as to show a potential distribution substantially the same as the measured potential distribution.
[0014]
<C> Analysis process The analysis process is a process of calculating the potential distribution in the vicinity of the
For example, on the analysis model, it is assumed that a current flows between the internal
[0015]
<D> Main Measurement Step The main measurement step is a step of measuring a potential distribution generated in the vicinity of the
For example, as shown in FIG. 3, power is supplied between the internal power supply electrode 21 (or 22) and the external
FIG. 4 shows an example of an equipotential diagram of the potential distribution measured during the main measurement process.
[0016]
<E> Estimation of damage position The damage position is estimated using the potential distribution calculated in the analysis step and the potential distribution measured in the main measurement step. Note that the order of the analysis step and the main measurement step may be the first or the second.
The difference between the potential distribution during the analysis step and the potential distribution during the main measurement step is defined as a differential potential distribution.
FIG. 5 shows an example of an equipotential diagram of the differential potential distribution.
Here, the position where the equipotential lines of the differential potential distribution are illustrated densely is estimated as the damage position. For example, an equipotential diagram of the difference potential distribution is created, and if there is a concave (or convex) portion, the lowest position (or higher position) of the depression is estimated as the damage position.
[0017]
[Example 1]
[0018]
<A> Measurement of potential distribution The measurement of the potential distribution is performed with the
For example, a state in which no current flows for a certain period of time at regular intervals appears between the feeding electrodes, and an alternating current having a waveform whose polarity changes is passed.
[0019]
<B> Calculation of resistivity distribution First, an analysis model having the same shape as the
Next, in the analysis model that gives the initial value of the specific resistance distribution, the potential distribution in the vicinity of the impermeable layer is calculated on the assumption that a current flows between the feeding electrodes. This result is set as a potential based on the analysis result.
The potential based on the analysis result is compared with the potential of the potential distribution during the main measurement process, and the initial value of the specific resistance distribution is corrected by the following equation.
[0020]
[Formula 1]
[0021]
The specific resistance is corrected for a plurality of points on the ground or landfill. Moreover, it repeats as needed until the electric potential distribution of an analysis result and the electric potential distribution at the time of this measurement process correspond. For example, the potential distribution in the vicinity of the water shielding layer is calculated by an analysis model in which the calculated specific resistance distribution is set.
[0022]
<C> A current is passed between the estimated
The potential distribution during the analysis process is subtracted from the potential distribution during the main measurement process to obtain a differential potential distribution.
It can be estimated that the position where the potential is lowest on the differential potential distribution diagram where the internal feeding electrode is + and the external feeding electrode is-is the center position of damage.
As a method for estimating the position having the lowest potential, the following method can be used.
As a first method, a mean square error between a theoretical value obtained by applying a theoretical expression indicating a potential change around the damage assuming a damage position and the difference potential distribution is obtained, and the damage position where the error is minimized A method for identifying the can be used.
Here, the theoretical formula is shown below.
[0023]
[Formula 2]
[0024]
As a second method, a method of specifying a damage position from the coincidence between the potential distribution obtained from the numerical simulation analysis and the difference potential distribution can be used.
[0025]
[Example 2]
Examples in which the water shielding layer has a double structure will be described below.
<A> When an external power supply electrode is installed inside a water shielding layer, a schematic diagram is shown in FIG.
In this case, the external
This makes it possible to detect the position of the upper
In addition, when the internal power feeding electrode and the potential measurement electrode are installed below the lower impermeable layer 12, the damage position of the lower impermeable layer 12 can be detected.
[0026]
<B> When the feeding electrode and the potential measuring electrode are installed inside the water shielding layer, a schematic diagram is shown in FIG.
In this case, the feeding electrodes (33, 35) and the reference electrodes (32, 34) are installed both inside and outside the
In this case, the damage position of the upper
[0027]
<C> In other cases, it is naturally possible to make the water shielding layer shown in FIG. By carrying out like this, when both the upper
Also, the water shielding layer shown in FIG. 2 has a double structure, the
[0028]
[Effect of the present invention]
Since the method for obtaining the specific resistance distribution of the present invention is as described above, the following effects can be obtained.
<A> A specific resistance distribution is obtained so that the measured potential distribution matches the calculated potential distribution. For this reason, the specific resistance distribution of the ground or landfill can be obtained with high accuracy.
<B> The specific resistance distribution can be obtained with high accuracy without increasing the number of measurement electrodes as compared with the conventional method. Therefore, it is not necessary to spend cost and time to install a measuring instrument for improving accuracy.
[0029]
Moreover, since the method for detecting the damage position of the water shielding layer of the present invention has been described above, the following effects can be obtained.
<I> It is possible to accurately detect the damage position of the water shielding layer of the water shielding structure.
<B> Before estimating the damage position, remove the influence of background potential distribution such as non-uniformity of internal and external conductivity, influence of potential distribution due to the position of the feed electrode, and influence of potential distribution due to the shape of the water shielding structure. . For this reason, the damage position of the water shielding layer can be detected with high accuracy.
<C> Even if the number of measurement electrodes is not increased as compared with the conventional method, the damage position of the water shielding layer can be detected with high accuracy. Therefore, in order to improve the accuracy, the construction cost of the landfill is not increased.
<D> Even when applied to a landfill with a complicated shape, it is possible to accurately detect the damage position of the water shielding layer without increasing the number of measurement electrodes.
<E> Even when it is applied to a landfill during landfill, it is possible to accurately detect the damage position of the water shielding layer without being affected by changes in electrical characteristics accompanying the progress of landfill.
[Brief description of the drawings]
FIG. 1 is a schematic diagram for obtaining a specific resistance distribution according to the present invention. FIG. 2 is a schematic diagram when power is supplied between internal power supply electrodes of the present invention. Fig. 4 Example of equipotential diagram of measured potential distribution Fig. 5 Example of equipotential diagram of differential potential distribution Fig. 6 External power supply with double structure Outline diagram of the embodiment when the electrode is installed inside the impermeable layer. [Fig. 7] Outline of the embodiment when the impermeable layer has a double structure and the feeding electrode and the potential measuring electrode are installed inside the impermeable layer. Figure
Claims (2)
遮水層を境にして地中の一方の側の少なくとも2箇所に給電電極を設置し、
給電電極間に電流を流して地盤又は埋立地の地中の電位分布を測定する予備測定工程と、
地盤又は埋立地と同一形状の解析モデルにおける比抵抗分布の初期値を仮定し、
この比抵抗分布に前記予備測定工程時の地盤又は埋立地の電流を与えて算出される地中の電位分布と、
前記予備測定工程で測定した地中の電位分布と、を比較し、
比較した結果を基に比抵抗分布の初期値を変更し、
算出した電位分布が予備測定工程で測定した電位分布とほぼ同一の分布となるような遮水層近傍の比抵抗分布を算出し、
遮水層間に電流を流したと仮定して、
前記比抵抗分布から遮水層近傍の電位分布を算出する解析工程と、
解析工程と順序を問わない本測定工程であって、
遮水層間に電流を流して遮水層近傍に発生する電位分布を測定する本測定工程と、
解析工程で算出した電位分布と、本測定工程で測定した電位分布との差から差分電位分布を作成する比較工程と、
差分電位分布から損傷の有無ならびにその位置を推定する推定工程とからなる、
遮水層の損傷位置検知方法。 In the method of detecting the damage position of an electrically high resistance water shielding layer,
Install feed electrodes at least at two locations on one side of the ground with the impermeable layer as the boundary,
A preliminary measurement step of measuring the potential distribution in the ground or landfill by passing an electric current between the feeding electrodes;
Assuming the initial value of resistivity distribution in the analysis model of the same shape as the ground or landfill,
Underground potential distribution calculated by giving the ground or landfill current during the preliminary measurement process to this resistivity distribution,
Compare the ground potential distribution measured in the preliminary measurement step,
Based on the comparison result, the initial value of the resistivity distribution is changed,
Calculate the specific resistance distribution near the impermeable layer so that the calculated potential distribution is almost the same as the potential distribution measured in the preliminary measurement process,
Assuming that a current was passed between the impermeable layers,
An analysis step of calculating a potential distribution in the vicinity of the impermeable layer from the specific resistance distribution;
This measurement process, regardless of the analysis process and order,
A main measurement process for measuring a potential distribution generated in the vicinity of the impermeable layer by passing an electric current between the impermeable layers;
A comparison step of creating a differential potential distribution from the difference between the potential distribution calculated in the analysis step and the potential distribution measured in the main measurement step;
It consists of an estimation process for estimating the presence and location of damage from the differential potential distribution,
A method for detecting the damage position of a water shielding layer .
遮水層が二層からなる2重構造を有しており、
遮水層の少なくとも一層の損傷位置を検知することを特徴とする、
遮水層の損傷位置検知方法。In the method for detecting a damage position of the water shielding layer according to claim 1 ,
The water shielding layer has a double structure consisting of two layers,
Detecting at least one damaged position of the water shielding layer,
A method for detecting the damage position of a water shielding layer.
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