JP4485185B2 - Thin film dry processing method - Google Patents
Thin film dry processing method Download PDFInfo
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- JP4485185B2 JP4485185B2 JP2003418903A JP2003418903A JP4485185B2 JP 4485185 B2 JP4485185 B2 JP 4485185B2 JP 2003418903 A JP2003418903 A JP 2003418903A JP 2003418903 A JP2003418903 A JP 2003418903A JP 4485185 B2 JP4485185 B2 JP 4485185B2
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- thin film
- polarized light
- laser beam
- dry processing
- processing method
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- 239000010409 thin film Substances 0.000 title claims description 34
- 238000003672 processing method Methods 0.000 title claims description 8
- 230000010287 polarization Effects 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 238000002679 ablation Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000011343 solid material Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 230000005068 transpiration Effects 0.000 description 1
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Description
本発明は、基板上に蒸着、又はスパッタリングによって形成された薄膜をレーザービームの照射によって、蒸散（アブレーション）させることによる薄膜のドライ加工方法に関するものである。 The present invention is deposited on the substrate, or by irradiation of sputtering Thus formed thin film with a laser beam, to a dry processing method of a thin film by evaporating (ablation).
薄膜のドライ加工方法としては、通常５ナノ秒ないし５０ナノ秒程度のパルスレーザービームを集光状態とした上で、基板上の薄膜を熱溶融し、かつ蒸散させている。 As a method for dry processing of a thin film, a thin film on a substrate is usually melted and evaporated after a pulsed laser beam of about 5 to 50 nanoseconds is focused.
但し、従来採用されたドライ加工方法においては、１本のレーザービームを集光しているが、発振の段階から偏光方向が特定しているため、特に偏光状態について、格別の工夫を行わない限り、必然的に、直線偏光状態によるレーザービームによる照射が行われていた。 However, in the conventionally employed dry processing method, a single laser beam is focused, but since the polarization direction is specified from the oscillation stage, the polarization state is not particularly specially devised. Inevitably, irradiation with a laser beam in a linearly polarized state was performed.
しかしながら、このような直線偏光によるレーザーパルスの場合には、加工エッジ（薄膜が蒸散した端部付近）において、縞模様による段差が生じ、平坦な仕上がり表面を形成することができない。 However, in the case of such a laser beam by linearly polarized light, a step due to a striped pattern occurs at the processing edge (near the end where the thin film has evaporated), and a flat finished surface cannot be formed.
ドライ加工においては、平坦な仕上がり表面を得ることが、極めて重要である以上、前記のような縞模様による段差の発生は、当然解決しなければならない事項であるが、これまでに、この点を解決する技術的手法は提案されていなかった。 In dry processing, since it is extremely important to obtain a flat finished surface, the occurrence of steps due to the stripe pattern as described above is a matter that must be solved. No technical technique to solve was proposed.
本発明は、前記従来技術の問題点を克服し、平坦な仕上がり表面を実現できるようなドライ加工方法の構成を提供することを課題としている。 It is an object of the present invention to provide a dry processing method configuration that can overcome the problems of the prior art and realize a flat finished surface.
前記課題を解決するため、本発明の構成は、基板上に蒸着、又はスパッタリングによって形成された薄膜をレーザービームの照射によって、蒸散（アブレーション）させることによる薄膜のドライ加工方法において、照射する短パルスレーザービームとして、紫外線領域の波長を選択し、パルス幅を５ピコ秒から５０ピコ秒の範囲とし、当該レーザービームが下側の基板における透過に至らずに、薄膜に吸収された状態としたうえで、異なる偏光成分を重畳させたことに基づく、縞模様による段差の発生を解消することによって平坦な表面仕上げを行う薄膜のドライ加工方法からなる。 To solve the above problems, the configuration of the present invention deposited on the substrate, or by irradiation of sputtering Thus formed thin film with a laser beam, in the dry method for processing a thin film by evaporating (ablation), short of irradiating The wavelength of the ultraviolet region is selected as the pulse laser beam, the pulse width is set in the range of 5 picoseconds to 50 picoseconds, and the laser beam is absorbed by the thin film without reaching the lower substrate. In addition, the method includes a thin film dry processing method for performing a flat surface finish by eliminating the generation of a step due to a stripe pattern based on superimposing different polarization components.
本発明においては、従来技術のような直線偏光ではなく、偏光方向が相違しているレーザービームを重畳しているので、加工エッジにおいて縞模様による段差の発生を防止、又は減少することができ、しかもパルス幅を５ピコ秒から５０ピコ秒に選択することによって、熱溶融により盛り上がり、及び当該盛り上がりに伴うクラックの発生を防止し、更には薄膜が残存する頻度を激減しうるので、平坦な表面仕上げによる効率的なドライ加工を実現することができる。 In the present invention, since the laser beam having a different polarization direction is superimposed instead of linearly polarized light as in the prior art, it is possible to prevent or reduce the occurrence of a step due to a striped pattern at the processing edge, In addition, by selecting the pulse width from 5 picoseconds to 50 picoseconds, it is possible to prevent the occurrence of swell due to thermal melting and cracks associated with the swell, and further reduce the frequency of thin film remaining. Efficient dry processing by finishing can be realized.
図１は、本発明の典型的な実施態様を示すが、発振装置によって発生したレーザービームは、エクスパンダーレンズによって、光束を拡大された上で、波長偏光板を通過することによって、円偏光または楕円偏光に変換される。 FIG. 1 shows an exemplary embodiment of the present invention, in which a laser beam generated by an oscillation device is expanded by a expander lens and then passed through a wavelength polarizing plate. Converted to elliptically polarized light.
このような変換を行ってから薄膜に照射した場合には、通常の直線偏光のように、偏光方向が特定していないため、加工エッジにおいて、縞模様による段差が生ぜず、平坦な表面仕上げを実現することができる。 When the thin film is irradiated after such conversion, the polarization direction is not specified as in normal linearly polarized light. Can be realized.
因みに、直線偏光によるレーザービームを使用したことによるドライ加工を行った場合の基板表面において、加工エッジに図２（a）に示すような縞模様が散在しているのに対し、円偏光によるレーザービームを照射した場合には、図２（b）に示すように、加工エッジにおいて、前記のような縞模様による段差は生じていない。 Incidentally, while the substrate surface is dry-processed by using a linearly polarized laser beam, a stripe pattern as shown in FIG. 2 (a) is scattered on the processing edge, whereas a circularly polarized laser is used. When the beam is irradiated, as shown in FIG. 2 (b), the step due to the stripe pattern does not occur at the processing edge.
図２（a）に示す縞模様の方向は、偏光方向と直交状態にある。従って、縞模様の方向をキャンセルさせるために、直交し合う関係にある偏光方向の二種類の直線偏光成分によるレーザーパルスを照射することによっても、前記のような縞模様の段差の発生を減少させることができる。 The direction of the striped pattern shown in FIG. 2A is orthogonal to the polarization direction. Therefore, in order to cancel the direction of the striped pattern, the generation of the step of the striped pattern as described above can also be reduced by irradiating a laser pulse with two kinds of linearly polarized components in the polarization direction that are orthogonal to each other. be able to.
但し、このような直線偏光の重畳による方法では、異なるレーザーパルス光源を数個必要とすることになり、装置の簡便性において、図１に示す実施態様の方が優れている。 However, such a method by superimposing linearly polarized light requires several different laser pulse light sources, and the embodiment shown in FIG. 1 is superior in terms of simplicity of the apparatus.
図１に示す実施対応において、波長偏光盤に加える入力電圧の方向を時間の経過に伴って、ランダムとした場合には、薄膜に照射されるレーザービームをランダム偏光の状態とすることができるが、このようなランダム偏光によっても、円偏光または楕円偏光の場合と同じように、前記縞模様の段差発生を防止することができる。 In the implementation correspondence shown in FIG. 1, when the direction of the input voltage applied to the wavelength polarizing plate is random with time, the laser beam applied to the thin film can be in a randomly polarized state. Even with such random polarized light, it is possible to prevent occurrence of a step in the striped pattern as in the case of circularly polarized light or elliptically polarized light.
薄膜のドライ加工に際し、パルス幅を５ナノ秒乃至５０ナノ秒程度の範囲とした場合には、ドライ加工を行った両端に薄膜の熱溶融により盛り上がりが生じ、しかも盛り上がり部分にクラックが生ずる場合、更には、薄膜の残存部分も発生することがある。 In the case of dry processing of a thin film, when the pulse width is in the range of about 5 nanoseconds to 50 nanoseconds, when both ends of the dry processing are swelled due to thermal melting of the thin film, and cracks occur in the swelled portion, Furthermore, a remaining portion of the thin film may be generated.
これに対し、本発明においては、パルス幅を約５ピコ秒から５０ピコ秒の短パルス幅とすることによって、レーザービームの各部位に対し、桁違いに微細な加工を行うことが可能となり、熱溶融による盛り上がり、これに伴うクラックの発生を防止し、更には、薄膜が残存する頻度を激減することができる。 On the other hand, in the present invention, by setting the pulse width to a short pulse width of about 5 picoseconds to 50 picoseconds, it becomes possible to perform an extremely minute processing on each part of the laser beam, Swelling due to heat melting and the generation of cracks associated therewith can be prevented, and the frequency with which the thin film remains can be drastically reduced.
前記パルス幅によるレーザービームの場合には、縞模様を形成する個別の縞自体が形成しにくい状態になることが、異なる偏光方向を重畳することに基づき、平坦な表面仕上げという本発明の効果を更に一層助長することができる。 In the case of the laser beam with the pulse width, it is difficult to form individual stripes forming a stripe pattern, and the effect of the present invention of flat surface finishing is based on overlapping different polarization directions. It can be further encouraged.
本願発明においては、短パルスレーザービームの波長の範囲として、紫外線領域の波長を選択している。 In the present invention, the wavelength in the ultraviolet region is selected as the wavelength range of the short pulse laser beam.
通用、レーザー発振装置におけるレーザービームの発振周波数は、赤外線領域を中心としている場合が多く、且つ本発明においても、このような領域による短パルスレーザービームを採用することが、可能である。 In general, the oscillation frequency of a laser beam in a laser oscillating apparatus is often in the infrared region, and in the present invention, it is possible to employ a short pulse laser beam in such a region.
但し、短パルスレーザービームの波長の範囲を紫外線領域に選択した場合には、一般に紫外線が、固体の素材に吸収されやすいことから、当該固体の素材に対応して、蒸着、又はスパッタリングにおいて形成される薄膜の厚さを所定以上に選択することによって下側の基板における透過に至らずに、薄膜に吸収された状態にて、当該薄膜の蒸散に寄与することができる。 However, when the wavelength range of the short pulse laser beam is selected in the ultraviolet region, since ultraviolet rays are generally easily absorbed by solid materials, they are formed by vapor deposition or sputtering corresponding to the solid materials. By selecting the thickness of the thin film to be greater than or equal to a predetermined value, it is possible to contribute to the transpiration of the thin film in a state where it is absorbed by the thin film without reaching the lower substrate.
すなわち、透明な薄膜に対するドライ加工を行った場合、赤外線による短パルスレーザービームの場合には、薄膜に吸収されずに、基板側に照射する傾向があるのに対し、紫外線領域の短パルスレーザービームを採用した場合には、たとえ、透明な薄膜であっても、前記のように、蒸着、又はスパッタリングにおいて形成される薄膜の厚さを所定以上に選択することによって、前記紫外線が薄膜内に吸収され、効率的なドライ加工を実践することができる。 In other words, when dry processing is performed on a transparent thin film, in the case of a short pulse laser beam using infrared rays, there is a tendency to irradiate the substrate side without being absorbed by the thin film, whereas a short pulse laser beam in the ultraviolet region. Is used, even if it is a transparent thin film , as described above, the ultraviolet ray is absorbed into the thin film by selecting the thickness of the thin film formed by vapor deposition or sputtering to a predetermined value or more. It is possible to practice efficient dry processing.
このように、本発明は、加工エッジにおいて、縞模様による段差が生ぜずに、平坦な仕上げを目的とする薄膜のドライ加工分野において、利用することができる。 Thus, the present invention can be used in the field of dry processing of a thin film for the purpose of flat finishing without causing a step due to a striped pattern at the processing edge.
１：レーザービーム光源
１０：レーザービーム
２：ミラー
３：波長偏光板
４：レンズ
５：薄膜
６：基板
７：平面方向リニア駆動ステージ
５１：加工領域
５２：縞模様
1: Laser beam light source 10: Laser beam 2: Mirror 3: Wavelength polarizing plate 4: Lens 5: Thin film 6: Substrate 7: Planar direction linear drive stage 51: Processing region 52: Striped pattern
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| JP4485185B2 true JP4485185B2 (en) | 2010-06-16 |
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