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JP4486451B2 - LIGHT EMITTING DEVICE, LEAD FRAME USED FOR THE LIGHT EMITTING DEVICE, AND LEAD FRAME MANUFACTURING METHOD - Google Patents
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JP4486451B2 - LIGHT EMITTING DEVICE, LEAD FRAME USED FOR THE LIGHT EMITTING DEVICE, AND LEAD FRAME MANUFACTURING METHOD - Google Patents

LIGHT EMITTING DEVICE, LEAD FRAME USED FOR THE LIGHT EMITTING DEVICE, AND LEAD FRAME MANUFACTURING METHOD Download PDF

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JP4486451B2
JP4486451B2 JP2004259716A JP2004259716A JP4486451B2 JP 4486451 B2 JP4486451 B2 JP 4486451B2 JP 2004259716 A JP2004259716 A JP 2004259716A JP 2004259716 A JP2004259716 A JP 2004259716A JP 4486451 B2 JP4486451 B2 JP 4486451B2
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light emitting
lead frame
emitting element
mounting portion
emitting device
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JP2006080141A (en
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大 青木
和宜 角
俊勝 広江
利明 森川
篤 大高
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Stanley Electric Co Ltd
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Stanley Electric Co Ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/381Auxiliary members
    • H10W72/387Flow barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/931Shapes of bond pads
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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Description

本発明は、発光装置及びその製造方法、ならびに発光装置の製造に使用するリードフレームに関し、特に発光ダイオード(LED)の等の発光素子を用いた表面実装型の発光装置に適用される有効な技術に関するものである。   The present invention relates to a light-emitting device, a method for manufacturing the same, and a lead frame used for manufacturing the light-emitting device, and in particular, an effective technique applied to a surface-mounted light-emitting device using a light-emitting element such as a light-emitting diode (LED). It is about.

従来、発光ダイオード等の発光素子を用いた発光装置には、第1リードフレーム及び第2リードフレームを、実装基板のスルーホールに挿入して半田付けする挿入実装型とともに、前記実装基板の表面に設けられたパッド(端子)に半田付けする表面実装型がある。   Conventionally, in a light-emitting device using a light-emitting element such as a light-emitting diode, a first lead frame and a second lead frame are inserted into a through-hole of the mounting substrate and soldered together with an insertion mounting type on the surface of the mounting substrate. There is a surface mount type that solders to a provided pad (terminal).

本発明は、後者である表面実装型の範疇の発光装置等に関するものであるが、従来の表面実装型の発光装置のリードフレームは一般的に平板体であり、発光素子を装着するリードフレームの実装部もその平板体の一部であるため、発光素子を実装部に装着する際、半田等の合金層が発光素子の側面や表層面にまで回り込んでしまうという現象が生じていた。そのため、パッケージ化した発光装置の電気回路に短絡現象が生じ、発光素子の発光機能が損なわれてしまうという問題が生じていた。   The present invention relates to the latter type of light emitting device of the surface mount type, etc., but the lead frame of the conventional surface mount type light emitting device is generally a flat body, and the lead frame of the light emitting element is mounted. Since the mounting part is also a part of the flat body, when the light emitting element is mounted on the mounting part, a phenomenon that an alloy layer such as solder wraps around the side surface or the surface layer of the light emitting element has occurred. For this reason, a short circuit phenomenon occurs in the electric circuit of the packaged light emitting device, and the light emitting function of the light emitting element is impaired.

図7は、従来の表面実装型の発光装置を示す。この発光装置は、平板状のリードフレームの一部をカップ状の底部Bとしてその個所に発光素子31を接着させてなるものである(特許文献1参照)。この発光装置30では、第1リードフレーム33の第2リードフレーム34側寄りに周囲を下方に向けて円錐状に傾斜させたカップ状の中心に平坦状の底部Bを発光素子31の反射板Lとし、底部Bに発光素子31を半田37を用いて接合させるようになっている。このようにすることによって、発光素子31を動作させたときに発生する熱を、底部Bを介して発光装置の外部に放熱することができ、発光効率の安定化を図ることができる。また、反射板Lが発光機能を効果的なものとすることができる。   FIG. 7 shows a conventional surface mount type light emitting device. In this light emitting device, a part of a flat lead frame is used as a cup-shaped bottom portion B, and a light emitting element 31 is adhered to the portion (see Patent Document 1). In the light emitting device 30, the flat bottom B is formed at the center of the cup shape in which the periphery is inclined downwardly toward the second lead frame 34 side of the first lead frame 33, and the reflecting plate L of the light emitting element 31. The light emitting element 31 is joined to the bottom B using solder 37. By doing so, heat generated when the light emitting element 31 is operated can be radiated to the outside of the light emitting device via the bottom B, and the light emission efficiency can be stabilized. Further, the reflecting plate L can make the light emitting function effective.

この発光装置30は、平板状の第1及び第2のリードフレーム33を有し、第1リードフレーム33の底部Bに発光素子31の一方の電極を半田37によって接続し、発光素子31の他方の電極をボンディングワイヤ35によって第2リードフレーム34に接続している。発光素子31及びボンディングワイヤ35等は、封止用絶縁体36によって封止される。
特開2003−174200号公報
The light emitting device 30 has first and second flat lead frames 33, one electrode of the light emitting element 31 is connected to the bottom B of the first lead frame 33 by a solder 37, and the other of the light emitting elements 31 is connected. These electrodes are connected to the second lead frame 34 by bonding wires 35. The light emitting element 31, the bonding wire 35, and the like are sealed with a sealing insulator.
JP 2003-174200 A

しかしながら、この表面実装型の発光装置30によれば、第1リードフレーム33におけるカップ状面の底部Bは平面であるため、半田37が発光素子31の側面や表層部への回り込む可能性があり、上述した短絡等の問題が生ずる恐れがある。   However, according to the surface mount type light emitting device 30, the bottom B of the cup-shaped surface of the first lead frame 33 is a flat surface, and thus the solder 37 may wrap around the side surface or the surface layer of the light emitting element 31. There is a risk that the above-mentioned problems such as short circuit may occur.

従って、本発明の目的は、かかる問題を可及的に解消し、発光素子への導電性接着剤等(半田等)の回り込みを防止することによって短絡事故を未然に防止し、発光素子の実装の信頼性の向上を図る表面実装型の発光装置及びその製造方法、ならびに発光装置の製造に使用するリードフレームを提供することにある。   Accordingly, an object of the present invention is to eliminate such a problem as much as possible and prevent a short circuit accident by preventing the conductive adhesive or the like (solder etc.) from wrapping around the light emitting element. It is an object of the present invention to provide a surface mount type light emitting device and a method for manufacturing the same, and a lead frame used for manufacturing the light emitting device.

上記の目的を達成するため、本発明に係る発光装置は、発光素子と、前記発光素子の第1電極と電気的に接続する第1リードフレームと、前記発光素子の第2電極と電気的に接続する第2リードフレームと、前記発光素子、前記発光素子の第1電極と第1リードフレームの接続部、及び前記発光素子の第2電極と第2リードフレームの接続部を封止する絶縁体とからなる表面実装型の発光装置であって、第1リードフレームには、上面は平坦とし、接続部側に1又は同一高さの複数の凸状で裏面側において凹状形状の実装部が形成され、前記実装部の前記上面の面積は、前記発光素子の面積と同等又はそれより小さく形成されており、前記実装部の前記上面に前記発光素子を接着させたことを特徴とする。 In order to achieve the above object, a light emitting device according to the present invention includes a light emitting element, a first lead frame electrically connected to the first electrode of the light emitting element, and a second electrode of the light emitting element. A second lead frame to be connected, the light emitting element, a connecting portion between the first electrode and the first lead frame of the light emitting element, and an insulator for sealing the connecting portion between the second electrode of the light emitting element and the second lead frame The first lead frame has a flat top surface, and one or a plurality of convex shapes of the same height are formed on the connection portion side, and a concave mounting portion is formed on the back surface side. The area of the upper surface of the mounting portion is formed to be equal to or smaller than the area of the light emitting element, and the light emitting element is bonded to the upper surface of the mounting portion.

この場合、前記実装部の高さは、0.01〜0.15mmであることが好ましい。   In this case, the height of the mounting portion is preferably 0.01 to 0.15 mm.

また、前記実装部の前記上面は、格子状の溝が設けられていることが好ましい。 Moreover, it is preferable that a lattice-like groove is provided on the upper surface of the mounting portion .

この場合、前記実装部の高さは、0.01〜0.15mmであることが好ましい。   In this case, the height of the mounting portion is preferably 0.01 to 0.15 mm.

さらに、前記第1リードフレームは、所定位置に1又は同一高さの複数の上面が平坦な凸条をあらかじめ有する導体板によって構成されることが好ましい。   Furthermore, it is preferable that the first lead frame is composed of a conductor plate having a plurality of protrusions having a flat top surface at a predetermined position and one or the same height.

この場合、前記半導体装置用実装部を形成するステップは、前記第1リードフレームを半抜きにした後、逆方向から押圧してその高さを調整するステップを含むことが好ましい。   In this case, it is preferable that the step of forming the semiconductor device mounting portion includes a step of adjusting the height by pressing the first lead frame halfway and then pressing it in the reverse direction.

本発明によれば、発光素子の実装部は極めて簡単な構造でありながら、的確に発光素子への半田等の接着剤の回り込みを阻止することによって短絡事故の防止と実装の信頼性の向上を図ることができる。また、前記実装部の前記上面を平坦状とすることにより、発光素子を確実に前記実装部にマウントすることができる。さらに実装部の面積は、前記発光素子の装着面の面積と同等かそれよりも小さくすることによって、一層発光素子への接着剤の回り込みを阻止することができる。また、前記第1リードフレームは接続部側において凸状で裏面側において凹状の形状としているのでリードフレームの表面積が増加して放熱性が向上する。   According to the present invention, the mounting portion of the light-emitting element has a very simple structure, but prevents the occurrence of short-circuit accidents and improves the mounting reliability by accurately preventing the adhesive such as solder from wrapping around the light-emitting element. Can be planned. In addition, by making the upper surface of the mounting portion flat, the light emitting element can be reliably mounted on the mounting portion. Further, by making the area of the mounting portion equal to or smaller than the area of the mounting surface of the light emitting element, it is possible to further prevent the adhesive from entering the light emitting element. In addition, since the first lead frame has a convex shape on the connection portion side and a concave shape on the back surface side, the surface area of the lead frame is increased and heat dissipation is improved.

また、本発明の発光装置の製造方法によれば、順送トランスファー加工のみならず歩留まりを一層高めるクランクプレスによる加工が可能であり、さらに第1リードフレーム及び第2リードフレームの同時形成を行うこともできる。また、前記の同時形成と同時に第1リードフレームに発光素子を接着する実装部を形成させることもできる。   In addition, according to the method for manufacturing a light emitting device of the present invention, not only progressive transfer processing but also processing by a crank press that further increases the yield is possible, and the first lead frame and the second lead frame are simultaneously formed. You can also. In addition, a mounting portion for adhering the light emitting element to the first lead frame can be formed simultaneously with the simultaneous formation.

さらに、本発明の発光装置の製造に使用するリードフレームによれば、第1リードフレームに設けた光素子を接着する実装部は周囲のリードフレーム面より高い凸部を形成させた部位とするから、発光素子への半田等の接着剤の回り込みを確実に防止することができる。   Furthermore, according to the lead frame used for manufacturing the light emitting device of the present invention, the mounting portion for bonding the optical element provided on the first lead frame is a portion where a convex portion higher than the surrounding lead frame surface is formed. Thus, it is possible to reliably prevent the adhesive such as solder from wrapping around the light emitting element.

以下、本発明の実施をするための最良の形態を、図1〜図5を用いて説明する。   Hereinafter, the best mode for carrying out the present invention will be described with reference to FIGS.

図1は、本発明の発光装置の断面概要図である。発光装置1は、発光素子11と、前記発光素子11のチップ下面11aに設けた第1電極と電気的に接続する第1リードフレーム13と、前記発光素子11のチップ上面11bに設けた第2電極と電気的に接続する第2リードフレーム14と、前記発光素子11の第2電極と第2リードフレーム14の接続部とを接続するボンディングワイヤ15、及び前記発光素子11及び接続部を含んだ周囲を封止するエポキシ樹脂からなる封止用絶縁体16とからなり、前記第1リードフレーム13及び第2リードフレーム14の外部装置との接続端子部13a、14aを前記封止用絶縁体16の外部に露出してパッケージ化したものであって、第1リードフレーム13には、前記発光素子11を接着させて実装させるための1又は同一高さの複数の凸部(以下、実装部という。)13Aを形成させ、前記発光素子11の下側となるチップ下面11aを前記実装部13Aの上面13b低融点接続が可能な共晶半田17によって接着させてある。   FIG. 1 is a schematic cross-sectional view of a light emitting device of the present invention. The light emitting device 1 includes a light emitting element 11, a first lead frame 13 electrically connected to a first electrode provided on the chip lower surface 11 a of the light emitting element 11, and a second lead provided on the chip upper surface 11 b of the light emitting element 11. A second lead frame 14 electrically connected to the electrode; a bonding wire 15 connecting the second electrode of the light emitting element 11 and a connecting portion of the second lead frame 14; and the light emitting element 11 and the connecting portion. The sealing insulator 16 is made of an epoxy resin that seals the periphery, and the connection terminal portions 13a and 14a of the first lead frame 13 and the second lead frame 14 to external devices are connected to the sealing insulator 16. The first lead frame 13 has a plurality of protrusions having one or the same height for bonding and mounting the light emitting element 11 on the first lead frame 13. (Hereinafter, referred to as mounting part.) 13A is formed, it is to adhere the chip lower surface 11a serving as the lower side of the light emitting element 11 by the upper surface 13b low melting access for eutectic solder 17 of the mounting portion 13A.

発光素子11は、図示しない基板上にn型半導体層及びp型半導体層が積層されることにより発光層が形成され、その上面に第2電極としてのp側電極及び基板の下側に第1電極としてのn側電極が形成されている。   In the light emitting element 11, a light emitting layer is formed by laminating an n-type semiconductor layer and a p-type semiconductor layer on a substrate (not shown), and a p-side electrode as a second electrode is formed on the upper surface of the light-emitting element 11 and a first electrode is formed on the lower side of the substrate. An n-side electrode as an electrode is formed.

図2は、本発明の発光装置の他の実施例の断面概要図である。発光装置1は、実装部13Aが2つの凸状で形成されているほか、図1の発光装置1と同一の構造であり、同一の部分には同一の引用文字を使用したので、構成説明は省略する。   FIG. 2 is a schematic cross-sectional view of another embodiment of the light emitting device of the present invention. The light emitting device 1 has a mounting portion 13A formed in two convex shapes, and has the same structure as the light emitting device 1 of FIG. 1, and the same reference characters are used for the same portions. Omitted.

図3は、第1リードフレーム13であって、同図(a)は、実装部13Aが1つの凸状で形成されている場合、同図(b)は実装部13Aが2つの凸状で形成されて場合である。同図(a)によれば、実装部13Aの上面13aには、共晶半田17が塗布ないし滴下される。さらに共晶半田17を挟むようにその上に発光素子11が実装部13Aの上面13aに接着される。この場合、実装部13Aの上面13aの面積は、発光素子11のチップ下面11aの面積と同等かそれよりも小さく形成されるようにする。また、実装部13Aの高さは、0.01〜0.15mmとする。同様に、同図(b)によれば、実装部13Aの上面13aには、共晶半田17が塗布ないし滴下される。さらに共晶半田17を挟むようにその上に発光素子11が実装部13Aの上面13aに接着される。この場合、実装部13Aの上面13aの面積は、発光素子11のチップ下面11aの面積と同等かそれよりも小さく形成されるようにする。また、実装部13Aの高さは、0.01〜0.15mmとする。   FIG. 3 shows the first lead frame 13. FIG. 3A shows a case where the mounting portion 13A is formed with one convex shape, and FIG. 3B shows a case where the mounting portion 13A has two convex shapes. This is the case. According to FIG. 5A, eutectic solder 17 is applied or dropped on the upper surface 13a of the mounting portion 13A. Further, the light emitting element 11 is bonded to the upper surface 13a of the mounting portion 13A so as to sandwich the eutectic solder 17 therebetween. In this case, the area of the upper surface 13a of the mounting portion 13A is formed to be equal to or smaller than the area of the chip lower surface 11a of the light emitting element 11. Further, the height of the mounting portion 13A is set to 0.01 to 0.15 mm. Similarly, according to FIG. 2B, eutectic solder 17 is applied or dropped onto the upper surface 13a of the mounting portion 13A. Further, the light emitting element 11 is bonded to the upper surface 13a of the mounting portion 13A so as to sandwich the eutectic solder 17 therebetween. In this case, the area of the upper surface 13a of the mounting portion 13A is formed to be equal to or smaller than the area of the chip lower surface 11a of the light emitting element 11. Further, the height of the mounting portion 13A is set to 0.01 to 0.15 mm.

このような実装部13Aを備えた第1リードフレーム13は、共晶半田17を介して発光素子11を実装部13Aに接着する場合、共晶半田17が発光素子11のチップ側面11cやチップ上面11bに這い上がることを防止できる。その効果は、図1(図3(a))より図2(図3(b))の方が大きい。以上の実施の形態では、半導体発光素子の実装部への接着に、共晶半田を用いたが、これに限定されるものではなく、Agペースト等の導電性接着剤等であってもよい。   In the first lead frame 13 provided with such a mounting portion 13A, when the light emitting element 11 is bonded to the mounting portion 13A via the eutectic solder 17, the eutectic solder 17 is attached to the chip side surface 11c or the chip upper surface of the light emitting element 11. It is possible to prevent climbing to 11b. The effect is greater in FIG. 2 (FIG. 3B) than in FIG. 1 (FIG. 3A). In the above embodiment, eutectic solder is used for bonding the semiconductor light emitting element to the mounting portion, but the present invention is not limited to this, and a conductive adhesive such as Ag paste may be used.

また、第1リードフレームの凸部状に形成された実装部13aの上面に複数の溝を形成するものであってもよい。この場合、実装部13aの上面には、図4(a)(b)に示すように、リードフレームの幅方向に延びる溝28からなる格子状の溝(メッシュ形状の溝)が設けられる。
凸部に形成された実装部13aの上面に溝を形成することにより、余剰に半田等の接着剤が実装面に供給された場合でも、接着材の回り込みを防止する効果があり、更に実装時に生じる応用力も緩和する作用がある。
なお、この第1リードフレームの凸部上面に形成される溝の深さは3〜20μmであり、溝のピッチは0.04〜0.2mmであることが好ましい。
Further, a plurality of grooves may be formed on the upper surface of the mounting portion 13a formed in the convex shape of the first lead frame. In this case, as shown in FIGS. 4A and 4B, a lattice-like groove (mesh-shaped groove) including grooves 28 extending in the width direction of the lead frame is provided on the upper surface of the mounting portion 13a.
By forming a groove on the upper surface of the mounting portion 13a formed on the convex portion, even when excessive adhesive such as solder is supplied to the mounting surface, there is an effect of preventing the adhesive material from wrapping around. The applied force that occurs is also mitigated.
In addition, it is preferable that the depth of the groove | channel formed in the convex part upper surface of this 1st lead frame is 3-20 micrometers, and the pitch of a groove | channel is 0.04-0.2 mm.

図5は、第1リードフレーム13及び第2リードフレーム14の成形方法を示す概要図である。同図(a)は、加工前の概要図、同図(b)は、加工姿勢の概要図、同図(c)は加工終了時の概要図、同図(d)は、実装部13Aの高さを微調整する加工の概要図を示す。第1リードフレーム13及び第2リードフレーム14は、Cu等からなる平坦状の薄板である導体板12を素材として製造される(a)。ダイスD1、D2上に載置された導体板12は、パンチPがダイスD1、D2の方向に下動し導体板12を加圧する(b)。パンチPがさらに下降し、導体板12を半抜き状態の位置を下死点として反転上昇させる(c)。この一連の動作によって、1つの実装部13Aが下向きに形成される。図4(d)は、半抜きによって形成された実装部13Aを下からプレス金型PMによって押圧することによって実装部13Aの高さを微調整する加工工程を示す。   FIG. 5 is a schematic view showing a method for forming the first lead frame 13 and the second lead frame 14. (A) is a schematic diagram before processing, FIG. (B) is a schematic diagram of a processing posture, (c) is a schematic diagram at the end of processing, and (d) is a diagram of the mounting portion 13A. The outline figure of processing which adjusts height finely is shown. The first lead frame 13 and the second lead frame 14 are manufactured using the conductor plate 12 which is a flat thin plate made of Cu or the like as a material (a). In the conductor plate 12 placed on the dies D1 and D2, the punch P moves downward in the direction of the dies D1 and D2, and pressurizes the conductor plate 12 (b). The punch P is further lowered, and the conductor plate 12 is reversed and raised with the position of the half-drawn state as the bottom dead center (c). By this series of operations, one mounting portion 13A is formed downward. FIG. 4D shows a processing step for finely adjusting the height of the mounting portion 13A by pressing the mounting portion 13A formed by half punching with a press mold PM from below.

図6は、複数の実装部13A(1つのみ図示)をあらかじめ所定間隔を存して形成した導体板12を用いて、第1リードフレーム13及び第2リードフレーム14の成形方法を示す概要図である。同図(a)は、加工前の概要図、同図(b)は、加工姿勢の概要図、同図(c)は加工終了時の概要図を示す。ダイスD1、D2上に載置された導体板12は、パンチPがダイスD1、D2の方向に下降し導体板12を加圧する。パンチPがさらに下降し、導体板12を抜き状態の位置を下死点として反転上昇させる。この一連の動作によって、実装部13Aを有する第1リードフレーム13と平板状の第2リードフレーム14を同時に製造することができる。図5及び図6において、導体板12は、枠状の金属フレームに多数並列的に支持されていることが好ましいが、図示上省略してある。   FIG. 6 is a schematic diagram showing a method of forming the first lead frame 13 and the second lead frame 14 using the conductor plate 12 in which a plurality of mounting portions 13A (only one is shown) are formed in advance at predetermined intervals. It is. FIG. 4A is a schematic diagram before machining, FIG. 4B is a schematic diagram of a machining posture, and FIG. 4C is a schematic diagram at the end of machining. In the conductor plate 12 placed on the dies D1 and D2, the punch P descends in the direction of the dies D1 and D2, and pressurizes the conductor plate 12. The punch P further descends and reverses and rises with the position where the conductor plate 12 is removed as the bottom dead center. By this series of operations, the first lead frame 13 having the mounting portion 13A and the flat second lead frame 14 can be manufactured at the same time. 5 and 6, a large number of conductor plates 12 are preferably supported in parallel by a frame-like metal frame, but are omitted from the drawing.

次に、本発明の発光装置1の製造方法を手順を追って説明する。発光装置20の製造手順も略同様である。   Next, the manufacturing method of the light emitting device 1 according to the present invention will be described step by step. The manufacturing procedure of the light emitting device 20 is substantially the same.

手順1:第1リードフレーム13の実装部13Aの形成。導体板12を前記したプレス成形加工によって第1リードフレーム12及び第2リードフレーム14の一対のリードフレームを成形する。   Procedure 1: Formation of the mounting portion 13A of the first lead frame 13. A pair of lead frames of the first lead frame 12 and the second lead frame 14 is formed on the conductor plate 12 by the press forming process described above.

手順2:実装部13Aの上面13aへの共晶半田17の塗布(又は滴下)。   Procedure 2: Eutectic solder 17 is applied (or dropped) on the upper surface 13a of the mounting portion 13A.

手順3:発光素子11の実装部13Aへの装着。   Procedure 3: Attaching the light emitting element 11 to the mounting portion 13A.

手順4:ボンディングワイヤの配線。チップ上面11bのp側電極と第2リードフレーム14とを結線する。   Procedure 4: Wire bonding wires. The p-side electrode on the chip upper surface 11b and the second lead frame 14 are connected.

手順5:樹脂コーティング。発光素子11、第1リードフレーム13、第2リードフレーム14及びボンディングワイヤ15をエポキシ樹脂からなる封止用絶縁体16で封止する。   Procedure 5: Resin coating. The light emitting element 11, the first lead frame 13, the second lead frame 14, and the bonding wire 15 are sealed with a sealing insulator 16 made of epoxy resin.

以上の手順により、第2リードフレーム14をプラスの電極側、第1リードフレーム13をマイナスの電極側として通電させると、電流はボンディングワイヤ15を経由して第2リードフレーム14から第1リードフレーム13に流れる。このとき発光素子11は、半田17の回り込み現象による短絡は阻止されているから、n型半導体層からp型半導体層方向に電子が流れ、発光層から発光する。   According to the above procedure, when the second lead frame 14 is energized with the positive electrode side and the first lead frame 13 with the negative electrode side, current flows from the second lead frame 14 to the first lead frame via the bonding wire 15. 13 flows. At this time, since the light emitting element 11 is prevented from being short-circuited due to the wraparound phenomenon of the solder 17, electrons flow from the n-type semiconductor layer to the p-type semiconductor layer and emit light from the light emitting layer.

以上、本発明に係る発光装置よれば、発光素子の実装部は極めて簡単な構造でありながら、的確に発光素子への半田等の導電性接着剤の回り込みを阻止することによって短絡事故の防止と実装の信頼性の向上を図ることができる。また、前記実装部の前記上面を平坦状とすることにより、発光素子を確実に前記実装部にマウントすることができる。さらに実装部の面積は、前記発光素子の装着面の面積と同等かそれよりも小さくすることによって、一層発光素子への接着剤の回り込みを阻止することができる。   As described above, according to the light emitting device according to the present invention, the mounting portion of the light emitting element has a very simple structure, and by preventing the conductive adhesive such as solder from wrapping around the light emitting element, the short circuit accident can be prevented. The mounting reliability can be improved. In addition, by making the upper surface of the mounting portion flat, the light emitting element can be reliably mounted on the mounting portion. Further, by making the area of the mounting portion equal to or smaller than the area of the mounting surface of the light emitting element, it is possible to further prevent the adhesive from entering the light emitting element.

また、本発明の発光装置の製造方法によれば、順送トランスファー加工のみならず歩
留まりを一層高めるクランクプレスによる加工が可能であり、さらに第1リードフレーム及び第2リードフレームの同時形成を行うこともできる。また、前記の同時形成と同時に第1リードフレームに発光素子を接着する実装部を形成させることもできる。また、順送トランスファー装置によるほか、ブレーキプレスやターレットパンチプレス等の装置による製造も容易に可能である。導体板12が極めて薄い導電性の板であるから、実装部自体の加工のみならず、リードフレームのプレス加工も容易だからである
In addition, according to the method for manufacturing a light emitting device of the present invention, not only progressive transfer processing but also processing by a crank press that further increases the yield is possible, and the first lead frame and the second lead frame are simultaneously formed. You can also. In addition, a mounting portion for adhering the light emitting element to the first lead frame can be formed simultaneously with the simultaneous formation. In addition to the progressive transfer device, it can be easily manufactured by a device such as a brake press or a turret punch press. This is because the conductor plate 12 is an extremely thin conductive plate, so that not only the mounting portion itself but also the lead frame can be easily pressed.

さらに、本発明の発光装置の製造に使用するリードフレームによれば、第1リードフレームに設けた発光素子を接着する実装部は周囲のリードフレーム面より高い凸部を形成させた部位とするから、発光素子への半田等の接着剤の回り込みを確実に防止することができる。   Furthermore, according to the lead frame used for manufacturing the light emitting device of the present invention, the mounting portion for bonding the light emitting element provided on the first lead frame is a portion where a convex portion higher than the surrounding lead frame surface is formed. Thus, it is possible to reliably prevent the adhesive such as solder from wrapping around the light emitting element.

さらに、前記した手順5の樹脂コーティングにおいて、エポキシ樹脂からなる封止用絶縁体16で封止する際に、第1リードフレームおよび第2リードフレームの裏面側まで覆って、図2に点線で示す下部絶縁体16Aを形成することもできる。下部絶縁体16Aを形成した場合にはリードフレームを樹脂で覆うので、前記した実施の形態に比べて放熱性に劣るが封止用絶縁体とリードフレームの接着性が向上し両者の剥離が減少する。特にリードフレーム裏面が凹状となっているので封止用絶縁体との接着性に優れている。   Furthermore, in the resin coating in the above-described procedure 5, when sealing with the sealing insulator 16 made of epoxy resin, the back surface side of the first lead frame and the second lead frame is covered and shown by a dotted line in FIG. The lower insulator 16A can also be formed. When the lower insulator 16A is formed, the lead frame is covered with resin, so that the heat dissipation is inferior to that of the above-described embodiment, but the adhesion between the sealing insulator and the lead frame is improved and the peeling between the two is reduced. To do. In particular, since the back surface of the lead frame is concave, it has excellent adhesion to the sealing insulator.

本発明の発光装置の一実施例の断面概要図である。It is a cross-sectional schematic diagram of one Example of the light-emitting device of this invention. 本発明の発光装置の他の実施例の断面概要図である。It is a cross-sectional schematic diagram of the other Example of the light-emitting device of this invention. 第1リードフレームの構造を示し、(a)は、1つの凸状で形成される実装部を有する第1リードフレームである。(b)は、2つ(複数)の凸状で形成される実装部を有する第1リードフレームである。The structure of a 1st lead frame is shown, (a) is a 1st lead frame which has the mounting part formed in one convex shape. (B) is a first lead frame having a mounting portion formed in two (plural) convex shapes. (a)は、第1リードフレームの表面に形成された溝形状を説明するためのリードフレームの部分正面図であり、(b)は、第1リードフレームの表面に形成された溝形状を説明するためのリードフレームの部分断面図である。(A) is a partial front view of the lead frame for explaining the groove shape formed on the surface of the first lead frame, and (b) shows the groove shape formed on the surface of the first lead frame. It is a fragmentary sectional view of the lead frame for doing. リードフレームの製造方法の概要図であって、(a)は、加工前の概要図である。(b)は、加工姿勢の概要図である。(c)は、加工終了時の概要図である。(d)は、実装部の高さを微調整する加工工程の概要図である。It is a schematic diagram of a manufacturing method of a lead frame, and (a) is a schematic diagram before processing. (B) is a schematic diagram of a processing posture. (C) is a schematic diagram at the end of processing. (D) is a schematic diagram of a processing step for finely adjusting the height of the mounting portion. 実装部をあらかじめ所定間隔を存してマウントした導体板を用いて、リードフレームの製造方法の概要図であって、(a)は、加工前の概要図である。(b)は、加工姿勢の概要図である。(c)は、加工終了時の概要図である。It is a schematic diagram of the manufacturing method of a lead frame using the conductor board which mounted the mounting part beforehand at predetermined intervals, and (a) is a schematic diagram before processing. (B) is a schematic diagram of a processing posture. (C) is a schematic diagram at the end of processing. 従来の表面実装型の発光装置の実施例図である。It is an Example figure of the conventional surface mount type light-emitting device.

符号の説明Explanation of symbols

1,30 発光装置
11 ,31 発光素子
12 導体板
13,33 第1リードフレーム
13A,B 実装部
14,34 第2リードフレーム
15,35 ボンディングワイヤ
16,36 封止用絶縁体
17,37 半田
DESCRIPTION OF SYMBOLS 1,30 Light-emitting device 11, 31 Light-emitting element 12 Conductor plate 13, 33 1st lead frame 13A, B Mounting part 14, 34 2nd lead frame 15, 35 Bonding wire 16, 36 Sealing insulator 17, 37 Solder

Claims (3)

発光素子と、前記発光素子の第1電極と電気的に接続する第1リードフレームと、前記発光素子の第2電極と電気的に接続する第2リードフレームと、前記発光素子、前記発光素子の第1電極と第1リードフレームの接続部、及び前記発光素子の第2電極と第2リードフレームの接続部を封止する絶縁体とからなる表面実装型の発光装置であって、
第1リードフレームには、上面は平坦とし、接続部側に1又は同一高さの複数の凸状で裏面側において凹状形状の実装部が形成され、前記実装部の前記上面の面積は、前記発光素子の面積と同等又はそれより小さく形成されており、前記実装部の前記上面に前記発光素子を接着させたことを特徴とする発光装置。
A light emitting element, a first lead frame electrically connected to the first electrode of the light emitting element, a second lead frame electrically connected to the second electrode of the light emitting element, the light emitting element, and the light emitting element A surface-mount type light emitting device comprising a connecting portion between a first electrode and a first lead frame, and an insulator that seals a connecting portion between the second electrode of the light emitting element and the second lead frame,
The first lead frame has a flat upper surface, and a plurality of convex shapes having one or the same height on the connection portion side and a concave mounting portion on the back surface side. The area of the upper surface of the mounting portion is A light emitting device, wherein the light emitting element is formed to be equal to or smaller than an area of the light emitting element, and the light emitting element is bonded to the upper surface of the mounting portion.
前記実装部の高さは、0.01〜0.15mmであることを特徴とする請求項1記載の発光装置。   The light emitting device according to claim 1, wherein a height of the mounting portion is 0.01 to 0.15 mm. 前記実装部の前記上面には、格子状の溝が設けられていることを特徴とする請求項1又は2記載の発光装置。   The light emitting device according to claim 1, wherein a lattice-like groove is provided on the upper surface of the mounting portion.
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