JP4488883B2 - Active matrix substrate, display device and defect correcting method thereof - Google Patents

Description

  The present invention relates to an active matrix substrate having switching elements arranged in a matrix. The present invention also relates to a display device including an active matrix substrate and a defect correcting method thereof.

  A liquid crystal display device has a feature that it is thin and has low power consumption, and is widely used in various fields. In particular, an active matrix type liquid crystal display device having a thin film transistor (TFT) for each pixel has a high contrast ratio, excellent response characteristics, and high performance, so that it is used in televisions, monitors, and notebook computers. In recent years, the market has expanded.

  An active matrix liquid crystal display device includes an active matrix substrate on which a plurality of TFTs are formed, and a color filter substrate facing the active matrix substrate, and controls the alignment state of the liquid crystal layer sandwiched therebetween. Display.

  The active matrix substrate is manufactured by repeating a process of depositing a semiconductor film, an insulating film, and a conductor film on an insulating substrate and a process of patterning these films. For this reason, generation of defective TFTs for which normal TFT characteristics cannot be obtained, and occurrence of short circuits and disconnections in the scanning wiring and signal wiring are inevitable. In a liquid crystal display device manufactured using a TFT substrate having such a defect, there is a defective pixel (pixel defect) in which a normal voltage is not applied and a predetermined display cannot be performed.

  Therefore, a defect correction method has been proposed in which the pixel defect is made inconspicuous by directly connecting the pixel electrode of the defective pixel to the signal wiring.

For example, Patent Document 1 discloses a technique in which a connecting tongue 218 is provided so as to branch from a signal wiring 212 as shown in FIG. As shown in FIG. 11B, the connecting tongue 218 is disposed so as to overlap the pixel electrode 214 with the insulating film 222 interposed therebetween. When a pixel defect occurs, a signal voltage is always supplied from the signal wiring 212 to the pixel electrode 214 by melting the connecting tongue 218 with a laser beam and directly connecting the signal wiring 212 and the pixel electrode 214. As a result, pixel defects can be made inconspicuous.
Japanese Patent Laid-Open No. 10-3088

  However, the technique disclosed in Patent Document 1 has the following problems.

  In general, the output of a laser device varies within a certain range. For this reason, not only the connecting tongue 218 but also the signal wiring 212 itself may be melted. The melting of the signal wiring 212 may cause a severe defect such as a disconnection, which greatly reduces the reliability of the display device.

  FIG. 12 shows the vicinity of the connecting tongue 218 when a defect is corrected using the technique disclosed in Patent Document 1. Of the connecting tongue 218, the laser beam is irradiated under the condition that only the part away from the signal wiring 212 by 2.5 μm or more is melted, but the melted up to the signal wiring 212 due to the output variation. You can see what is being done. When the output variation is further increased, the signal wiring 212 is melted to cause disconnection.

  Further, as a result of further investigation by the inventor of the present application, it has been found that the molten connecting tongue piece 218 scatters to the pixel electrode 214 and damages the pixel electrode 214. Specifically, as shown in the photograph of FIG. 13A and the schematic diagram of FIG. 13B, the portion of the pixel electrode 214 located immediately above the connecting tongue 218 is scattered by the connecting tongue 218. I found out that it would rise. When the pixel electrode 214 is lifted, the alignment stability of the liquid crystal layer is disturbed and the display quality is deteriorated.

  Note that the irradiation condition of the laser beam can be set so that the damage to the pixel electrode 214 is as small as possible. However, the setting reduces the margin for insufficient melting of the connecting tongue 218. If the output of the laser device varies, a connection failure due to insufficient melting of the connecting tongue 218 occurs, resulting in a reduction in correction yield or a correction that is not reliable.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide an active matrix substrate capable of correcting a defect with high accuracy without causing disconnection of a signal wiring or damage of a pixel electrode. It is an object of the present invention to provide a display device including such an active matrix substrate and a defect correcting method thereof.

  An active matrix substrate according to the present invention includes a substrate, a plurality of scanning wirings formed on the substrate, a plurality of signal wirings intersecting the plurality of scanning wirings, and a corresponding scanning wiring formed on the substrate. A plurality of switching elements that operate in response to an applied signal, and a plurality of pixel electrodes that can be electrically connected to corresponding signal wirings via the plurality of switching elements, Each is an active matrix substrate having an overlapping portion that overlaps with the corresponding signal wiring when viewed from the normal direction of the substrate, and is a conductive member provided under the signal wiring via an insulating film, When viewed from the normal direction, it has a conductive member that at least partially overlaps the overlapping portion, thereby achieving the above object.

  In a preferred embodiment, the conductive member can be melted by being irradiated with laser light to connect the signal wiring and the pixel electrode.

  In a preferred embodiment, the conductive member is made of a metal material or a semiconductor material.

  In a preferred embodiment, the conductive member is insulated from the plurality of signal wirings and the plurality of scanning wirings and is in an electrically floating state.

  In a preferred embodiment, the conductive member is formed of the same film as the plurality of scanning wirings.

  In a preferred embodiment, the plurality of switching elements are a plurality of thin film transistors, and the conductive member is formed of the same film as a semiconductor layer included in the plurality of thin film transistors.

  In a preferred embodiment, each of the plurality of signal wirings has a trunk portion extending along a direction intersecting the plurality of scanning wirings, and a branch portion branched from the trunk portion. The overlapping portion overlaps the branch portion when viewed from the substrate normal direction.

  In a preferred embodiment, the conductive member entirely overlaps the signal wiring when viewed from the normal direction of the substrate.

  In a preferred embodiment, the conductive member partially overlaps the signal wiring when viewed from the normal direction of the substrate.

  A display device according to the present invention includes an active matrix substrate having the above-described configuration, and a display medium layer disposed on the active matrix substrate, and includes a plurality of pixel regions arranged in a matrix. The above objective is achieved.

  In a preferred embodiment, the display device according to the present invention further includes a counter substrate facing the active matrix substrate via the display medium layer, and the display medium layer is a liquid crystal layer.

  A defect correction method for a display device according to the present invention is a defect correction method for a display device having the above-described configuration, the step of identifying a pixel region exhibiting a display defect from the plurality of pixel regions, and the identified Including electrically connecting a pixel electrode of the specified pixel region and a corresponding signal wiring by irradiating the conductive member provided in the pixel region with laser light to melt the conductive member. In this way, the above object is achieved.

  Since the active matrix substrate according to the present invention has a conductive member that at least partially overlaps the overlapping portion of the pixel electrode (portion overlapping the signal wiring in the pixel electrode) when viewed from the normal direction of the substrate, When this occurs, the conductive member is melted by irradiating the conductive member with laser light, whereby the signal wiring and the pixel electrode can be connected. Since this conductive member is provided below the signal wiring via the insulating film, there is no possibility that the signal wiring is melted even if the output of the laser device varies. In addition, since the conductive member is provided in the lower layer of the signal wiring via the insulating film, the molten conductive member is scattered to the pixel electrode by the insulating film between the signal wiring and the conductive member or the signal wiring. It is suppressed. Furthermore, since it is not necessary to set the laser beam irradiation conditions in consideration of signal wiring melting and pixel electrode damage, it is possible to perform laser beam irradiation under conditions that allow a sufficient margin for insufficient melting, and the corrected yield. Can be corrected with high reliability. As described above, according to the present invention, it is possible to perform defect correction with high accuracy without causing disconnection of the signal wiring and occurrence of damage to the pixel electrode.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. Hereinafter, the present invention will be described by taking a liquid crystal display device including a thin film transistor (TFT) as a switching element as an example. However, the present invention is not limited to this and is widely applied to an active matrix display device including a switching element. Used.

  1 and 2 show a liquid crystal display device 100 according to this embodiment. FIG. 1 is a cross-sectional view schematically showing the liquid crystal display device 100, and FIG. 2 is a top view schematically showing one pixel region of the liquid crystal display device 100.

  As shown in FIG. 1, the liquid crystal display device 100 includes an active matrix substrate (hereinafter referred to as “TFT substrate”) 100a, a counter substrate 100b facing the TFT substrate 100a, and a liquid crystal layer 40 provided therebetween. And.

  Electrodes 14 and 34 for applying a voltage to the liquid crystal layer 40 are provided on the liquid crystal layer 40 side of the TFT substrate 100a and the counter substrate 100b, respectively. The orientation of the liquid crystal layer 40 changes in accordance with the voltage applied between the electrodes 14 and 34, thereby displaying.

  In FIG. 1, the electrode 14 of the TFT substrate 100a is shown as a continuous single conductive film. However, as will be described later, the electrode 14 of the TFT substrate 100a is provided separately for each pixel. In contrast, the electrode 34 of the counter substrate 100b is typically a continuous single electrode (referred to as a common electrode) provided on a transparent substrate (for example, a glass substrate) 30.

  Next, the structure of the TFT substrate 100a will be described in detail.

  The TFT substrate 100 a includes an insulating transparent substrate (for example, a glass substrate) 10, a plurality of scanning wirings (also referred to as gate bus lines) 11 formed on the substrate 10, and a plurality of intersecting scanning wirings 11. Signal wiring (also called source bus lines) 12 is provided. The scanning wiring 11 and the signal wiring 12 are typically orthogonal to each other.

  The TFT substrate 100a further includes a plurality of TFTs 13 that operate in response to signals applied to the corresponding scanning wirings 11, and a plurality of pixel electrodes that can be electrically connected to the corresponding signal wirings 12 via these TFTs 13. 14.

  The TFT 13 includes a semiconductor layer 15, a gate electrode 13 G electrically connected to the scanning wiring 11, a source electrode 13 S electrically connected to the signal wiring 12, and a drain electrode electrically connected to the pixel electrode 14. 13D. FIG. 2 illustrates a double gate type TFT having two gate electrodes 13G, but the present invention is not limited to this.

  As shown in FIG. 2, the pixel electrode 14 is provided so that a part thereof overlaps the scanning wiring 11 and the signal wiring 12 when viewed from the normal direction of the substrate, thereby improving the aperture ratio. ing. In the present specification, a portion of the pixel electrode 14 that overlaps the signal wiring 12 is referred to as a “superimposition portion”.

  As shown in FIG. 2, the signal wiring 12 in the present embodiment includes a trunk (signal wiring main body) 12a extending along the direction intersecting the scanning wiring 11, and a branch 12b branched from the trunk 12a. . The branch portion 12b is formed to extend toward the inside of the pixel region. A part of the trunk portion 12 a and the entire branch portion 12 b overlap the pixel electrode 14.

  The TFT substrate 100a is provided with an auxiliary capacitance line 16 and an auxiliary capacitance electrode 17, and an auxiliary capacitance is formed by these. The auxiliary capacitance wiring 16 is formed from the same film as the scanning wiring 11, and the auxiliary capacitance electrode 17 is formed from the same film as the semiconductor layer 15 of the TFT 13.

  The TFT substrate 100a in the present embodiment is further provided with a conductive member 18 for directly connecting the signal wiring 12 and the pixel electrode 14 when a pixel defect occurs.

  Here, the structure and arrangement of the conductive member 18 will be described with further reference to FIG. 3 is a cross-sectional view taken along line 3A-3A 'in FIG.

  As shown in FIG. 3, the conductive member 18 is provided in the lower layer of the signal wiring 12 via the insulating film 21. More specifically, the conductive member 18 is formed on the lower insulating film 20 covering the semiconductor layer 15 from the same conductive film (so-called gate metal layer) as the scanning wiring 11. However, the conductive member 18 is separated from the scanning wiring 11 and is not electrically connected. Further, the conductive member 18 is covered with the upper insulating film 21 and is not electrically connected to the signal wiring 12. That is, the conductive member 18 is in an electrically floating state (floating). In addition, the conductive member 18 partially overlaps the branch portion 12b of the signal wiring 12 when viewed from the normal direction of the substrate, and the overlapping portion of the pixel electrode 14 (the planarizing resin layer 22 of the pixel electrode 14 is overlapped). Through the signal wiring 12).

  Next, a method for correcting pixel defects in the liquid crystal display device 100 will be described.

  When a pixel defect occurs in the liquid crystal display device 100, first, a pixel region that exhibits a display defect is specified from among a plurality of pixel regions. This step is performed, for example, by visually checking the display using an arbitrary signal generator capable of generating an arbitrary signal.

  Next, in the specified pixel region, as shown in FIG. 4, the conductive member 18 is irradiated with laser light to melt the conductive member 18, thereby electrically connecting the pixel electrode 14 and the signal wiring 12. . The conductive member 18 irradiated with the laser beam melts and flows out between the signal wiring 12 and the pixel electrode 14, and then solidifies to become a wiring 18 ′ that connects the signal wiring 12 and the pixel electrode 14. Since the signal wiring 12 and the pixel electrode 14 are directly electrically connected by the wiring 18 ′, the display signal from the signal wiring 12 is always applied to the pixel electrode 14, and the defect is not noticeable.

  As described above, the TFT substrate 100a according to this embodiment includes the conductive member 18 that at least partially overlaps the overlapping portion of the pixel electrode 14 (the portion of the pixel electrode 14 that overlaps the signal wiring 12). When a defect occurs, the conductive member 18 is melted by irradiating the conductive member 18 with laser light, whereby the signal wiring 12 and the pixel electrode 14 can be connected. Since the conductive member 18 is provided below the signal wiring 12 through the insulating film 20, there is little possibility that the signal wiring 12 is melted even if the output of the laser device varies.

  Further, since the conductive member 18 is provided in the lower layer of the signal wiring 12 through the insulating film 20, scattering of the molten conductive member 18 to the pixel electrode 14 is caused between the signal wiring 12 and the conductive member 18. It is suppressed by the insulating film 20 and the signal wiring 12.

  Furthermore, since it is not necessary to set the laser beam irradiation conditions in consideration of the melting of the signal wiring 12 and the damage of the pixel electrodes 14, the laser beam irradiation can be performed under a condition that allows a sufficient margin for insufficient melting. Reliable correction can be performed.

  As described above, according to the present invention, defect correction can be performed with high accuracy without causing disconnection of the signal wiring 12 or occurrence of damage to the pixel electrode 14.

  In the technique disclosed in Patent Document 1, the connecting tongue 218 branched from the signal wiring 212 is used for fusion connection. That is, one part of two members (the pixel electrode 214 and the signal wiring 212) to be directly connected to each other is used. On the other hand, in the present invention, a conductive member 18 is provided in a layer different from the pixel electrode 14 and the signal wiring 12 to be directly connected to each other, more specifically, below the signal wiring 12 via the insulating film 20. The conductive member 18 is melted to function as the wiring 18 ′. In other words, the present invention has been made on the basis of an original idea different from the conventional technical knowledge that a member provided at a level different from the member to be connected is used for fusion connection.

  As shown in this embodiment, the conductive member 18 for fusion connection is preferably insulated from the signal wiring 12 and the scanning wiring 11 and is in an electrically floating state (floating). When the conductive member for fusion connection is connected to a member to which a predetermined potential is applied (for example, when formed integrally with the wiring), the signal wiring 12 and the pixel electrode 14 are electrically connected to the member. It is necessary to separate the member from the conductive member prior to the irradiation of the laser beam so as not to be connected to the laser beam. On the other hand, if the conductive member 18 is in a floating state, it is possible to correct a defect without increasing such extra steps.

  Further, when the conductive member 18 is formed from the same film as other members (for example, the scanning wiring 11) as in the present embodiment, the conductive member 18 is not accompanied by an increase in extra steps in the manufacturing process of the liquid crystal display device. Can be built.

  The size and arrangement of the conductive members 18 are not limited to those illustrated in FIGS. 2 and 3. Hereinafter, other examples of the conductive member 18 will be described.

  FIG. 2 illustrates the case where the width of the conductive member 18 (the width along the extending direction of the signal wiring 12) matches the width of the branch portion 12b of the signal wiring 12, but as illustrated in FIG. The width of 18 may be smaller than the width of the branch portion 12 b or, conversely, may be larger than the width of the branch portion 12.

  2, 3 and 5 show an arrangement in which only a part of the conductive member 18 overlaps the signal wiring 12, but as shown in FIGS. It may overlap with the signal wiring 12. As shown in FIG. 6, the entire conductive member 18 may overlap the branch portion 12b of the signal wiring 12, and as shown in FIG. 7, the conductive member 18 is connected to the trunk portion 12a and the branch portion 12b of the signal wiring 12. May all overlap.

  As shown in FIGS. 6 and 7, when the conductive member 18 entirely overlaps the signal wiring 12, it is possible to prevent the aperture ratio from being lowered by the conductive member 18. On the other hand, as shown in FIGS. 2, 3, and 5, if the conductive member 18 has a portion that does not overlap the signal wiring 12 but overlaps the pixel electrode 14, the signal wiring 12 and the pixel electrode 14 Since the molten conductive member 18 easily flows between the signal line 12 and the pixel electrode 14, the connection between the signal line 12 and the pixel electrode 14 can be performed more reliably. Furthermore, it is also preferable to locally reduce the thickness of the planarizing resin film 22 on the conductive member 18 from the viewpoint of more reliably connecting.

  Moreover, as shown in FIG. 8, you may provide the conductive member 18 larger than the branch part 12b. If the size of the conductive member 18 is sufficiently larger than the spot size of the laser beam, the remaining portion of the conductive member 18 (the portion where the laser beam has not been irradiated) is irradiated with the laser beam even if the fusion connection fails. As a result, the fusion connection can be performed again.

  A metal material can be widely used as the material of the conductive member 18. Further, the conductive member 18 only needs to secure electrical connection between the signal wiring 12 and the pixel electrode 14 and does not necessarily require electrical conductivity as much as a metal material. Therefore, a semiconductor material may be used as the material of the conductive member 18.

  FIG. 9 shows a TFT substrate 100a including a conductive member 18A formed from a semiconductor material. The conductive member 18 </ b> A shown in FIG. 9 is formed from the same film as the semiconductor layer 15 constituting the TFT 13. Even when the conductive member 18A formed of a semiconductor material is provided, the signal wiring 12 and the pixel electrode 14 can be connected by melting the conductive member 18A by laser light irradiation.

  In the present embodiment, the signal wiring 12 having the trunk portion 12a extending along the direction intersecting the scanning wiring 11 and the branch portion 12b branched from the trunk portion 12a is illustrated. However, as shown in FIG. 12 may not have branches. Even if the signal wiring 12 does not have a branch portion, if the conductive member 18 is provided so as to at least partially overlap the signal wiring 12, it is possible to correct a defect by fusion connection.

  Further, as shown in FIG. 2, the TFT substrate 100a of the present embodiment uses a configuration in which the pixel electrode 14 overlaps the main body (trunk portion 12a) of the signal wiring 12 with the planarizing resin film 22 interposed therebetween. However, such a configuration is not necessarily employed, and a configuration in which the pixel electrode 14 does not overlap with the main body (trunk portion 12a) of the signal wiring 12 but only with the branch portion 12b may be employed. .

  The liquid crystal display device 100 according to the present embodiment can employ the same configuration as various known liquid crystal display devices, except that the conductive member 18 or 18A for performing fusion connection is provided. Therefore, it can be manufactured using various known manufacturing methods. Below, an example of a manufacturing method is shown about the structure shown in FIG.

  First, a polycrystalline silicon film having a thickness of 50 nm is formed on an insulating substrate (for example, a glass substrate) 10, and the semiconductor layer 15 is formed by patterning the polycrystalline silicon film. At this time, the conductive member 18A and the auxiliary capacitance electrode 17 are also formed simultaneously from the polycrystalline silicon film for forming the semiconductor layer 15. Various known methods can be used to form the polycrystalline silicon film.

Next, a silicon oxide (SiO ₂ ) film having a thickness of 100 nm is deposited on almost the entire surface of the substrate 10 using the CVD method so as to cover the semiconductor layer 15, the conductive member 18 A, and the auxiliary capacitance electrode 17. 20 is formed.

  Subsequently, after depositing a tantalum nitride (TaN) film having a thickness of 30 nm and a tungsten (W) film having a thickness of 370 nm on the lower insulating film 20 by sputtering, the stacked film is patterned to obtain a gate electrode. 13G and auxiliary capacitance wiring 16 are formed.

  Thereafter, a source region and a drain region are formed in the semiconductor film 15 by doping impurities in a predetermined region of the semiconductor layer 15. At this time, a region of the semiconductor layer 15 that is not doped with impurities becomes a channel region.

Next, the upper insulating film 21 is formed by laminating a silicon nitride (SiN _x ) film having a thickness of 250 nm and a silicon oxide (SiO ₂ ) film having a thickness of 700 nm using the CVD method so as to cover almost the entire surface of the substrate. Form.

  Subsequently, in the lower insulating film 20 and the upper insulating film 21, a source contact hole 20a is formed so as to expose a part of the source region, and a drain contact hole 20b is formed so as to expose a part of the drain region. .

  Thereafter, a sputtering method is used to laminate a titanium (Ti) film with a thickness of 100 nm, an aluminum (Al) film with a thickness of 350 nm and a titanium (Ti) film with a thickness of 100 nm, and patterning the laminated film results in a signal. A wiring 12, a source electrode 13S, and a drain electrode 13D are formed.

  Next, a flattened resin film 22 having a thickness of 2400 nm is formed by applying and baking an acrylic resin, and a contact hole 22a is formed at a predetermined position (specifically, on the drain electrode 14) of the flattened resin film 22. Form.

  Thereafter, an indium oxide (ITO) film doped with tin is deposited on the planarizing resin film 22 so as to have a thickness of 100 nm, and the pixel electrode 14 is formed by patterning the ITO film.

  The TFT substrate 100a thus obtained is bonded to a separately manufactured counter substrate 100b, and a liquid crystal material is injected and sealed in the gap between them to form the liquid crystal layer 40, whereby the liquid crystal display device 100 is obtained. Is completed.

  When a pixel defect occurs, the conductive member 18A is melted using, for example, an Nd: YAG laser (wavelengths 1064 nm, 532 nm, 266 nm) or an Nd: YLF laser (wavelengths 1053 nm, 527 nm). The defect correction can be performed by connecting the pixel electrode 14.

  In the present embodiment, the present invention has been described by taking a liquid crystal display device including a liquid crystal layer as a display medium layer as an example. However, the present invention is not limited to this, and can be suitably used for various display devices. For example, it can be suitably used for an organic EL display device having an organic EL layer as a display medium layer.

  According to the present invention, an active matrix substrate capable of performing defect correction with high accuracy without causing disconnection of signal wiring or damage to pixel electrodes, a display device including such an active matrix substrate, and defect correction thereof A method is provided.

It is sectional drawing which shows typically the liquid crystal display device 100 in suitable embodiment of this invention. 4 is a top view schematically showing one pixel region of the liquid crystal display device 100. FIG. 3 is a diagram schematically showing the vicinity of a conductive member provided in the liquid crystal display device 100, and is a cross-sectional view taken along the line 3A-3A 'in FIG. It is a figure which shows typically a signal wiring and a pixel electrode being electrically connected by irradiation of the laser beam to a conductive member. It is a top view which shows the other example of arrangement | positioning of an electroconductive member. It is a top view which shows the other example of arrangement | positioning of an electroconductive member. It is a top view which shows the other example of arrangement | positioning of an electroconductive member. It is a top view which shows the other example of arrangement | positioning of an electroconductive member. It is sectional drawing which shows the other example of arrangement | positioning of an electroconductive member. It is a top view which shows the other example of arrangement | positioning of an electroconductive member. (A) is a top view which shows typically the conventional liquid crystal display device provided with the tongue for a connection for connecting a signal wiring and a pixel electrode, (b) is 11B- in (a). It is sectional drawing along a 11B 'line. FIG. 12 is a photograph showing the vicinity of a connecting tongue when a defect is corrected in the conventional liquid crystal display device shown in FIG. 11. (A) is a photograph showing the damage of the pixel electrode when defect correction is performed in the conventional liquid crystal display device shown in FIG. 11, and (b) is a cross-sectional view schematically showing the damage of the pixel electrode. .

Explanation of symbols

10 Substrate (insulating substrate)
11 Scanning wiring 12 Signal wiring 12a Trunk part 12b Branch part 13 Thin film transistor (TFT)
DESCRIPTION OF SYMBOLS 14 Pixel electrode 15 Semiconductor layer 16 Auxiliary capacity wiring 17 Auxiliary capacity electrode 18, 18A Conductive member 20 Lower layer insulating film 21 Upper layer insulating film 22 Flattening resin film 30 Substrate (insulating substrate)
34 electrodes (common electrode)
40 Liquid crystal layer 100 Liquid crystal display device 100a Active matrix substrate (TFT substrate)
100b Counter substrate (color filter substrate)

Claims (10)

A substrate,
A plurality of scanning wirings formed on the substrate;
A plurality of signal lines crossing the plurality of scanning lines;
A plurality of switching elements formed on the substrate and operating in response to signals applied to corresponding scanning lines;
A plurality of pixel electrodes that can be electrically connected to corresponding signal wirings via the plurality of switching elements;
Each of the plurality of pixel electrodes is an active matrix substrate having an overlapping portion that overlaps with a corresponding signal wiring when viewed from the substrate normal direction,
A conductive member provided in a lower layer of the signal lines through an insulating film, have a conductive member at least partially overlaps the superimposing unit when viewed from the substrate normal direction,
The conductive member is an active matrix substrate in which the conductive member entirely overlaps the signal wiring when viewed from the normal direction of the substrate.   2. The active matrix substrate according to claim 1, wherein the conductive member is melted by being irradiated with laser light and can connect the signal wiring and the pixel electrode. 3.   The active matrix substrate according to claim 1, wherein the conductive member is made of a metal material or a semiconductor material.   4. The active matrix substrate according to claim 1, wherein the conductive member is insulated from the plurality of signal wirings and the plurality of scanning wirings and is in an electrically floating state. 5.   The active matrix substrate according to claim 1, wherein the conductive member is formed of the same film as the plurality of scanning wirings. The plurality of switching elements are a plurality of thin film transistors,
The active matrix substrate according to claim 1, wherein the conductive member is formed of the same film as a semiconductor layer included in the plurality of thin film transistors. Each of the plurality of signal wirings has a trunk portion extending along a direction intersecting the plurality of scanning wirings, and a branch portion branched from the trunk portion.
The active matrix substrate according to claim 1, wherein the overlapping portion of the plurality of pixel electrodes overlaps the branch portion when viewed from the substrate normal direction. An active matrix substrate according to any one of claims 1 to 7, wherein a active matrix display medium layer disposed on the substrate, a display device having a plurality of pixel regions arranged in a matrix. The display device according to claim 8 , further comprising a counter substrate facing the active matrix substrate through the display medium layer, wherein the display medium layer is a liquid crystal layer. A defect correction method for a display device according to claim 8 or 9 ,
Identifying a pixel region exhibiting a display defect from the plurality of pixel regions;
The conductive member provided in the specified pixel region is irradiated with a laser beam to melt the conductive member, thereby electrically connecting the pixel electrode of the specified pixel region and the corresponding signal wiring. And a defect correcting method for a display device.