JP4496191B2 - OPTICAL PROCESS MONITOR DEVICE, OPTICAL PROCESS MONITOR METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - Google Patents

Description

  The present invention relates to an optical process monitor device, an optical process monitor method, and a semiconductor device manufacturing method, and more particularly to a technique for measuring an etching depth, a film thickness, and the like.

In the manufacturing process of a semiconductor device, the control of the etching depth in the etching process, the control of the film thickness in the film forming process, and the like are performed by monitoring the process time such as the film forming time or the etching time. However, the method of controlling the etching depth, film thickness, etc. by monitoring the process time cannot cope with unexpected fluctuations in the process environment such as temperature and pressure, and the semiconductor after the manufacturing process. It causes individual differences in the device. For this reason, a process monitor that does not monitor the process time but monitors the etching depth and film thickness in real time has recently been introduced. In particular, an optical process that monitors the progress of etching and film formation by making inspection light incident on the surface of the semiconductor substrate during the etching or film formation process from a monitor window provided in the process chamber and detecting the reflected light. A monitor device has been proposed (see, for example, Patent Document 1).
Japanese Patent Laid-Open No. 2002-93870 (Page 3, Fig. 1)

  However, in the conventional optical process monitor apparatus, a gas supply port is provided in the upper electrode of the process chamber, and a reactive gas is ejected therefrom. However, if a monitor window is provided on the upper electrode, there is no gas supply port in the monitor window, so the density of the reactive gas decreases near the lower part of the monitor window, the etching rate or film formation rate decreases, There was a problem that the uniformity of the film forming speed in the wafer surface was lowered.

  In view of the above problems, an object of the present invention is to provide an optical process monitor apparatus, an optical process monitor method, and a semiconductor device manufacturing method, which have good reaction uniformity in a process chamber.

In order to achieve the above-mentioned object, the first feature of the present invention is (a) a process chamber for storing an object to be measured, and (b) being arranged opposite to the object to be measured and reacting to the surface of the object to be measured. A gas head having a plurality of gas supply ports for supplying gas; (c) a light source for irradiating the object to be measured with inspection light; and (d) light disposed on the gas head so as to transmit the inspection light to the process chamber. A transmissive monitor window having a plurality of monitor window gas supply ports for supplying reactive gas to the object to be measured on the inspection light transmission surface, and supplying the monitor window gas without focusing the inspection light on the transmission surface An optical process monitor device comprising: a monitor window that transmits inspection light with a beam diameter larger than the diameter of the mouth; and (e) a monitor information calculation device that detects reflected light of the inspection light from the surface of the object to be measured. The gist.

The second feature of the present invention is that (a) an object to be measured is placed in a process chamber having a gas head having a plurality of gas supply ports in which a light-transmissive monitor window having a plurality of monitor window gas supply ports is arranged. (B) irradiating inspection light from the monitor window toward the object to be measured, and (c) monitoring window gas supply port without focusing the inspection light on the inspection light transmission surface of the monitor window. And (d) supplying reactive gas to the object to be measured through the gas supply port and the monitor window gas supply port. And (e) detecting the reflected light from the surface of the object to be measured transmitted through the monitor window with a beam diameter during the supply of the reactive gas to obtain monitor information. It is a summary.

The third feature of the present invention is that (a) an insulating film is formed on the semiconductor substrate, (b) an etching mask is formed on the surface of the insulating film, and (c) a plurality of monitor window gas supply ports. Storing a semiconductor substrate on which an etching mask is formed in a process chamber having a gas head having a plurality of gas supply ports in which a light-transmitting monitor window having a position is disposed ; and (d) a surface of the semiconductor substrate from the monitor window. Irradiate the inspection light toward the center of the inspection window and collect the inspection light so that it passes through the monitor window with a beam diameter larger than the diameter of the monitor window gas supply port without focusing on the inspection light transmission surface of the monitor window. (E) supplying reactive gas into the process chamber from the gas supply port and the monitor window gas supply port ; and (f) dry etching the insulating film in the process chamber. And (g) detecting the reflected light from the insulating film of the inspection light transmitted through the monitor window with the beam diameter during dry etching, detecting the end point of the dry etching, and stopping the dry etching; The gist of the present invention is a method of manufacturing a semiconductor device including:

  According to the present invention, it is possible to provide an optical process monitor device, an optical process monitor method, and a semiconductor device manufacturing method with good in-plane uniformity of reaction in a process chamber.

  Next, embodiments of the present invention will be described with reference to the drawings. In the following description of the drawings, the same or similar parts are denoted by the same or similar reference numerals. The following embodiments exemplify apparatuses and methods for embodying the technical idea of the present invention, and the technical idea of the present invention specifies the arrangement of components and the like as follows. Not what you want. The technical idea of the present invention can be variously modified within the scope of the claims.

(First embodiment)
An optical process monitor apparatus 10 according to the first embodiment of the present invention shown in FIG. 1 includes a light source 12, a monitor optical system 120 that receives inspection light hν _i emitted from the light source 12, and a lower part of the monitor optical system 120. Monitor window 54 provided in the arranged process chamber 50, azimuth adjusting mechanism 6 for adjusting the azimuth of the optical axis of the monitor window 54 connected to the monitor window 54, reflected light hν of inspection light transmitted through the monitor optical system 120 _A monitor information calculation device 28 for receiving _r is provided. The azimuth adjusting mechanism 6 preferably has a function like, for example, a Z-axis gonio stage, but can also be used with a single-axis rotary stage or the like.

The inspection light hν _i emitted from the light source 12 is guided to the monitor optical system 120 through the optical fiber 20a. Monitoring optical system 120, spatial filter 62 for removing fluctuations in irregular intensity distribution from the inspection light hv _i, the beam splitter 18 for receiving the inspection light hv _i which has passed through the spatial filter 62, the inspection light transmitted through the beam splitter 18 A lens 14 that receives hν _i , and a polarizer 60 that converts the inspection light hν _i collected by the lens 14 into linearly polarized light having a specific rotation angle (azimuth angle) around the optical axis. The polarizer 60 includes a rotation mechanism 5 for setting a rotation angle. The azimuth adjusting mechanism 6 and the rotating mechanism 5 function as the azimuth adjusting means 7.

A substrate holder 15 is disposed inside the process chamber 50. An object to be measured 16 that receives the inspection light hν _i is disposed on the substrate holder 15. The substrate holder 15 may have a rotation mechanism such as a turntable for rotating the object 16 to be measured. For example, when adjusting the azimuth of the optical axis of the monitor window 54 not by rotating only the monitor window 54 but by rotating the entire process chamber 50 or the like, the substrate holder 15 is rotated to rotate the polarization plane and the object 16 to be measured. It is possible to readjust the azimuth.

The inspection light hν _{i that} has been linearly polarized in a specific direction by the polarizer 60 passes through the monitor window 54 and is applied to the object 16 to be measured. The reflected light hν _r reflected from the surface of the measurement object 16 is guided to the monitor information calculation device 28 via the monitor window 54, the polarizer 60, the lens 14, the beam splitter 18, and the optical fiber 20b.

The monitor information calculation device 28 is connected to the spectroscope 22 and the spectroscope 22 that split the reflected light hν _r and is connected to the detector 24 and the detector 24 that detect the reflected light intensity for each wavelength, and the reflected light for each wavelength. A calculation unit 26 is provided for calculating monitor information in the thickness direction of the DUT 16 from the intensity information. Here, the “monitor information in the thickness direction” is information relating to the thickness direction such as the thickness of the thin film and the depth of the etching groove.

  FIG. 2 shows an example of the object to be measured 16 of the optical process monitor apparatus according to the first embodiment. The semiconductor substrate 80, the first insulating film 81 disposed on the semiconductor substrate 80, and the first insulating film First wiring layer 82 disposed on 81, second insulating film 83 disposed on first wiring layer 82, resist masks 85a, 85b, 85c disposed on second insulating film 83, Provided with 85d, 85e, and 85f. As shown in FIG. 3, each of the resist masks 85a to 85f is arranged in stripes on the second insulating film 83 with the pattern direction D as the longitudinal direction. Further, immediately below the second insulating film 83, the first wiring layers 82a, 82b, 82c, 82d, 82e are formed in a line and space pattern in a direction perpendicular to the longitudinal direction of the resist masks 85a to 85f, for example. Yes.

Here, the polarizer 60 shown in FIG. 1 has the plane of polarization of the inspection light hν _i emitted from the light source 12 of the first wiring layers 82a to 82e arranged in the line and space pattern shown in FIG. The rotation angle (azimuth angle) is adjusted by the rotation mechanism 5 so as to be substantially parallel to the longitudinal direction. By adjusting in this way, the inspection light hν _i can hardly transmit the first wiring layers 82a to 82e, and most of the light is reflected by the first wiring layers 82a to 82e. For this reason, it is possible to suppress the influence of layers below the first wiring layers 82a to 82e.

Further, FIGS. 4 and 5 show the optical arrangement relationship between the polarizer 60 and the monitor window 54 shown in FIG. Here, the monitor window 54 is made of a birefringent crystal, and sapphire, quartz, calcite, or the like can be used. These birefringent crystals have an axis in a certain direction in which birefringence does not occur inside the crystal, and this is called an “optical axis”. The monitor window 54 is provided with an azimuth adjusting mechanism 6 for adjusting the relative relationship of the azimuth of the optical axis A with respect to the polarization plane P of the inspection light hν _i as shown in FIG. In FIG. 4, the monitor window 54 is arranged so that the optical axis A coincides with the polarization plane P of the inspection light hν _i transmitted through the polarizer 60. In FIG. 5, the monitor window 54 is arranged so that the optical axis A coincides with the plane X parallel to the incident direction of the inspection light hν _i transmitted through the polarizer 60 and perpendicular to the polarization plane P of the inspection light hν _i. Is arranged.

In the relationship between the polarizer 60 and the monitor window 54 shown in FIGS. 4 and 5, the reflected light is monitored by the optical process monitor device 10 shown in FIG. 1, and the detected waveform spectrum acquired by the detector 24 is shown in FIG. Show. Further, as shown in FIG. 7, the detection is performed when the monitor window 54 is arranged so that the optical axis A coincides with a plane intersecting with the polarization plane P of the inspection light hν _i transmitted through the polarizer 60 at an angle of 45 °. The waveform spectrum is also shown in FIG. As shown in FIG. 6, when the monitor window 54 is arranged so that the optical axis A coincides with a plane intersecting with the polarization plane P of the inspection light hν _i transmitted through the polarizer 60 at an angle of 45 °, the inspection light Since hν _i is affected by the phase difference due to birefringence when passing through the monitor window 54, the detected waveform spectrum has a sawtooth shape due to noise. On the other hand, when the polarizer 60 and the monitor window 54 are arranged according to the relationship (0 °) shown in FIG. 4 or when the polarizer 60 and the monitor window 54 are arranged according to the relationship (90 °) shown in FIG. Thus, no sawtooth noise occurs in the detected waveform spectrum. 4 and 5, the monitor window 54 is arranged so that the optical axis A coincides with the polarization plane P of the inspection light hν _i transmitted through the polarizer 60 or the plane X perpendicular to the polarization plane P. However, some deviation between the polarization plane P or plane X and the optical axis A is allowed. That is, the monitor window 54 may be arranged in a relative relationship such that the deviation is within about ± 1 ° and the orientation of the polarization plane P or plane X and the optical axis A is substantially parallel.

Further, as shown in FIG. 8, noise is also generated in the detected waveform spectrum by preparing the monitor window 54 in advance so that the axial direction of the optical axis A of the monitor window 54 coincides with the incident direction of the inspection light hν _i . It is possible to prevent. Also in this case, the monitor window 54 may be set so that the angle formed by the axial direction of the optical axis A and the incident direction of the inspection light hν _i is within about ± 1 ° and is in a substantially parallel relationship with each other.

As described above, in the optical process monitor device 10 according to the first embodiment, the optical axis A coincides with the polarization plane P of the inspection light hν _i transmitted through the polarizer 60 as shown in FIG. Or a plane X that is parallel to the incident direction of the inspection light hν _i transmitted through the polarizer 60 and perpendicular to the polarization plane P of the inspection light hν _i as shown in FIG. The monitor window 54 is arranged so that the optical axis A coincides with the upper axis, or the axial direction of the optical axis A of the monitor window 54 coincides with the incident direction of the inspection light hν _i as shown in FIG. It is possible to prevent noise that may occur in the detected waveform spectrum. In the conventional optical process monitor device, the optical arrangement relationship between the monitor window made of a polarizer and a birefringent crystal is not considered. Therefore, there is a problem that noise is generated in the detected waveform spectrum and the monitor accuracy is deteriorated. In contrast, the optical process monitor device 10 shown in FIG. 1 according to the first embodiment does not generate noise in the detected waveform spectrum, and is highly accurate in the thickness direction of the DUT 16. Monitor information can be acquired. Therefore, it becomes possible to monitor the manufacturing process of a semiconductor device or the like having a fine structure with high accuracy.

  Next, the optical process monitoring method according to the first embodiment will be described with reference to FIG.

  (a) First, in step S101, as objects to be measured, resist masks 85a to 85f arranged in stripes on the second insulating film 83 and the second insulating film 83 on the surface shown in FIG. 2 and FIG. The semiconductor substrate 80 is disposed on the substrate holder 15 of the process chamber 50 shown in FIG.

(b) In step S102, the light to be measured 16 is irradiated with the inspection light hν _i from the light source 12 through the spatial filter 62, the beam splitter 18, the lens 14, the polarizer 60, and the monitor window 54. Further, in step S103, the polarization shown in FIG. 1 so that the polarization direction E of the inspection light hν _i matches the longitudinal direction of the first wiring layers 82a to 82e arranged in the line-and-space pattern shown in FIG. The child 60 is rotated about the optical axis by driving the rotation mechanism 5. In addition, you may rotate manually.

(c) In step S104, the azimuth of the optical axis A of the monitor window 54 with respect to the inspection light hν _i transmitted through the polarizer 60 and converted into linearly polarized light having a predetermined rotation angle (azimuth angle) is shown in FIG. The azimuth of the optical axis A of the monitor window 54 is adjusted by the azimuth adjusting mechanism 6 so that the relative relationship shown in FIG.

(d) In step S105, the monitor information calculation device 28 detects the detected waveform spectrum from the reflected light hν _r of the inspection light hν _i guided through the monitor window 54, the polarizer 60, the lens 14, the beam splitter 18 and the optical fiber 20b. And monitor information in the thickness direction of the second insulating film 83 shown in FIGS. 2 and 3 is calculated.

In the conventional optical process monitoring method, noise caused by birefringence is generated in the detected waveform spectrum, so it is difficult to accurately obtain monitor information in the thickness direction of the object to be measured. In contrast, the optical process monitoring method according to the first embodiment arranges the optical axis A of the monitor window in a direction defined with respect to the polarization direction E of the inspection light hν _i , thereby detecting the detected waveform spectrum. Therefore, the monitor information in the thickness direction of the object to be measured can be calculated with high accuracy.

  Next, a method for manufacturing the semiconductor device according to the embodiment of the present invention will be described with reference to FIG. 10 using an nMOS transistor as an active element.

  (a) First, in step S201, boron (B) is ion-implanted into the semiconductor substrate 1 which is the n-type silicon wafer shown in FIG. Next, part of the semiconductor substrate 1 is etched to form element isolation grooves 303 and 403, and an element isolation insulating layer 304 is embedded in each of the element isolation grooves 303 and 403 by a chemical vapor deposition (CVD) method or the like. . Further, the surface of the semiconductor substrate 1 is thermally oxidized to form a gate oxide film 305, and a polysilicon gate electrode 307 is formed on the gate oxide film 305 by a CVD method and an etching method. Phosphorus ions are implanted into the semiconductor substrate 1 in a self-aligned manner using the polysilicon gate electrode 307 as a mask, followed by heat treatment to form main electrodes (n-type source / drain regions) 310 and 311 in the p well 302, respectively. Thereafter, an interlayer insulating film 400 is deposited on the surface of the semiconductor substrate 1 by a CVD method.

  (b) In step S202, each of the line-and-space etching masks 900, 901, and 902 extending in the longitudinal direction as shown in FIGS. 12 and 13 is formed on the surface of the interlayer insulating film 400 by a lithography method, and in step S203, The semiconductor substrate 1 is accommodated in the process chamber 50 shown in FIG.

(c) In step S204, the interlayer insulating film 400 is irradiated with the linearly polarized inspection light hν _i from the light source 12 shown in FIG. 1 through the monitor window 54, and the optical axis of the monitor window 54 with respect to the polarization plane P of the inspection light hν _i The orientation of the monitor window 54 is adjusted using the azimuth adjusting mechanism 6 so that the relative relationship of the azimuth of A is as shown in FIG.

  (d) In step S205, after the process chamber 50 is evacuated, a reactive gas is introduced therein. Further, the reactive gas is turned into plasma by applying high-frequency power, and the interlayer insulating film 400 is selectively removed by dry etching using each of the etching masks 900, 901, and 902 shown in FIGS.

(e) In step S206, the reflected light hν _r of the inspection light hν _i reflected from the surface of the interlayer insulating film 400 and guided through the monitor window 54, the beam splitter 18 and the optical fiber 20b shown in FIG. The end point of the wiring forming grooves 800 and 801 shown in FIG. 14 detected by the apparatus 28 and formed by dry etching is detected, and the etching process is terminated.

  (f) In step S207, the semiconductor substrate 1 is taken out of the process chamber 50, and further, holes that communicate with the grooves 800 and 801 and reach the main electrodes 310 and 311 are formed by dry etching. Thereafter, copper (Cu) or the like is embedded in each of the grooves 800 and 801 and the holes by a plating method or the like. Further, the surface of the insulating film 400 is subjected to chemical mechanical polishing (CMP) treatment to form a wiring layer. Thereafter, the formation of the interlayer insulating film, the etching process shown in steps S202 to S207, the formation of vias, contacts, and the formation of the wiring layer are repeated to complete the semiconductor device.

Conventionally, noise is generated in the detected waveform spectrum, so that it is difficult to accurately control the etching process and the film forming process, and there has been a problem such as an etching defect and a short circuit caused by a film forming defect. On the other hand, according to the first embodiment, as shown in FIGS. 4, 5, and 8, the optical axis A of the monitor window 54 in the direction defined with respect to the polarization direction E of the inspection light hν _i. By arranging, noise does not occur in the detected waveform spectrum. Therefore, the progress of the etching process and the film forming process can be grasped with high accuracy, and the yield is improved in the manufacturing process of the semiconductor device.

(Second embodiment)
The dry process apparatus 30 constituting the optical process monitor apparatus according to the second embodiment of the present invention shown in FIG. 15 is disposed on the bottom 31, the side wall 32 disposed on the outer periphery of the bottom 31, and the top of the side wall 32. A process chamber 40 having a ceiling 33 is provided.

  An upper electrode 45 is disposed below the ceiling portion 33 so as to be sandwiched between the side walls 32. A space region surrounded by the bottom 31, the side wall 32, and the upper electrode 45 constitutes a reaction space 66. The process chamber 40 is connected to the vacuum exhaust system 36 via an exhaust port 48 provided in the side wall 32. A substrate holder 15 constituting a lower electrode is disposed on the bottom 31. A substrate temperature control means 35 is embedded in the substrate holder 15, and the object to be measured 16 is disposed on the substrate holder 15.

  A region surrounded by the ceiling 33, the upper electrode 45, and the side wall 32 constitutes a gas head 65. Here, a ceiling window 55 is provided in the ceiling portion 33. A monitor window 56 is provided below the ceiling window 55 of the upper electrode 45. The gas head 65 is connected to a gas supply system 37 through a gas inlet 47 provided in the side wall 32. Reactive gas is supplied from the gas supply system 37 into the gas head 65. Here, the upper electrode 45 is provided with gas supply ports 71a, 71b, 71c, 71d. Further, as shown in FIGS. 15 and 16, the monitor window 56 has a monitor window gas supply port 70a, 70b, 70c, 70d, 70e, 70f, 70g, 70h, 70i, 70j, 70k, 70l, 70m, 70n, 70o, 70p, 70q, 70r, 70s, 70t, 70u, 70v, 70w, 70x, 70y are provided. Reactive gas is supplied into the reaction space 66 shown in FIG. 15 from the gas head 65 through the gas supply ports 71a to 71d and the monitor window gas supply ports 70a to 70y.

  The substrate holder 15 as the lower electrode is connected to an impedance matching device 42 such as a variable capacitor. The impedance matching unit 42 is connected to the high frequency power source 43. The impedance matching unit 42 matches the input / output impedance of the high frequency power supply 43 with the input impedance on the lower electrode side. The upper electrode 45 is grounded.

  Outside the dry process apparatus 30, the light source 12, the monitor optical system 120, and the monitor information calculation apparatus 28 shown in FIG. Details of the light source 12, the monitor optical system 120, and the monitor information calculation device 28 are the same as those in FIG.

Here, the diameter a of each of the monitor window gas supply ports 70a to 70y provided in the monitor window 56 is the transmission surface of the monitor window 56 shown in FIG. 15 of the inspection light hν _i emitted from the light source 12 shown in FIG. Is smaller than the beam diameter d. For example, the beam diameter d of the inspection light hν _i is 6 to 7 mm, and the diameter a of each of the monitor window gas supply ports 70a to 70y is 1 mm.

Therefore, since the inspection light hν _i is not focused at each position of the monitor window gas supply ports 70a to 70y, each of the monitor window gas supply ports 70a to 70y causes the inspection light hν _i to scatter. The impact is negligible. Therefore, each of the monitor window gas supply ports 70a to 70y does not adversely affect the detection waveform spectrum obtained by the monitor information calculation device 28 shown in FIG. Further, the monitor window of the conventional optical process monitor device has no monitor window gas supply port. Therefore, the density of the reactive gas is lowered at the lower part of the monitor window in the reaction space, the etching rate is lowered, and the in-plane uniformity is lowered, so that there is a problem that the accuracy of the endpoint monitoring is lowered. . In contrast, since the monitor window 56 shown in FIG. 16 is provided with a plurality of monitor window gas supply ports 70a to 70y, the reaction is also performed in the region below the monitor window 56 in the reaction space 66 shown in FIG. The density of the property gas does not decrease. Therefore, it becomes possible to make the etching rate substantially equal between the portion directly below the monitor window 56 and the portion that is not, and the in-plane uniformity of the etching rate is improved, and the endpoint monitoring accuracy can be increased.

Note that, as the material of the monitor window 56 according to the second embodiment, an amorphous substance such as glass that does not have birefringence characteristics may be used as the material of the monitor window 54 according to the first embodiment. Birefringent materials such as quartz and calcite may be used.

  Next, an optical process monitoring method according to the second embodiment will be described with reference to FIG.

  (a) First, in step S301, the measurement object 16 is placed on the substrate holder 15 of the dry process apparatus 30 as shown in FIG.

(b) In step S302, the inspection light hν _i is emitted from the light source 12 shown in FIG. 1 toward the object 16 to be measured. In step S303, the beam diameter d of the inspection light hν _i is shown in FIGS. The inspection light hν _i is condensed by the lens 14 so as to be larger than the diameter a of each of the monitor window gas supply ports 70a to 70y of the monitor window 56.

(c) In step S304, the detector 24 of the monitor information calculation device 28 shown in FIG. 1 acquires the detected waveform spectrum of the reflected light hν _r from the surface of the device under test 16. From the acquired detection waveform spectrum, the calculation unit 26 calculates monitor information in the thickness direction of the DUT 16.

  Next, a method for manufacturing a semiconductor device according to the second embodiment will be described with reference to FIG.

(a) Steps S401 to S402 are the same as steps S201 to S202 in FIG. Next, in step S403, the semiconductor substrate 1 shown in FIG. 12 is accommodated in the process chamber 40 shown in FIG. 15, and then in step S404, the light source 12 shown in FIG. 1 is passed through the monitor window 56 shown in FIG. irradiating inspection light hv _i for the lens beam diameter d at the transmission surface is shown in FIG. 1 to be larger than the monitor window gas supply port 70a~70y respective diameter a of the monitor window 56 of the inspection light hv _i In 14, the inspection light hν _i is condensed.

  (b) In step S405, the process chamber 40 is evacuated by the evacuation system 36. After evacuation, the reactive gas is introduced into the process chamber 40 through the monitor window gas supply ports 70a to 70y and the gas supply ports 71a to 71d of the upper electrode 45, respectively. Further, in step S406, the reactive gas is turned into plasma by applying high-frequency power to the substrate holder 15 which is the lower electrode, and the interlayer insulating film is formed using each of the etching masks 900, 901, and 902 shown in FIGS. 400 is selectively dry-etched away.

(c) In step S407, the reflected light hν _r of the inspection light hν _i reflected from the surface of the interlayer insulating film 400 and guided through the monitor window 54, the beam splitter 18 and the optical fiber 20b shown in FIG. The end point of the wiring forming grooves 800 and 801 shown in FIG. 14 detected by the apparatus 28 and formed by dry etching is detected, and the etching process is terminated.

  (d) In step S408, the semiconductor substrate 1 is taken out of the process chamber 40, and further, holes communicating with the grooves 800 and 801 and reaching the main electrodes 310 and 311 are formed by dry etching. Thereafter, copper (Cu) or the like is embedded in each of the grooves 800 and 801 and the holes by a plating method or the like. Further, the surface of the insulating film 400 is subjected to chemical mechanical polishing (CMP) treatment to form a wiring layer. Thereafter, the formation of the interlayer insulating film, the etching process shown in steps S402 to S408, the formation of vias and contacts, and the formation of the wiring layer are repeated to complete the semiconductor device.

According to the optical process monitoring method and the semiconductor device manufacturing method according to the second embodiment described above, even in the vicinity of the monitor window 56 inside the reaction space 66 without causing scattering or the like in the inspection light hν _i. Reactive gas can be supplied from the gas head 65. Therefore, it is possible to perform a dry process such as film formation or etching with good in-plane uniformity of reaction without depending on the arrangement position.

(Other embodiments)
As mentioned above, although this invention was described by embodiment, it should not be understood that the description and drawing which form a part of this indication limit this invention. For example, in the embodiment, the method for manufacturing a semiconductor device has been described by taking a transistor as an example. However, the present invention is naturally applicable to a method for manufacturing another semiconductor device having an active element such as a diode. . In the second embodiment, the reactive ion etching (RIE) type plasma processing apparatus in which the wafer is mounted on the substrate holder (lower electrode) 15 shown in FIG. 15 is exemplified. It is also possible to use a down-flow (downstream) type plasma processing apparatus such as down-flow etching (chemical dry etching) that is installed separately. Downflow process equipment includes a type in which the active area for forming plasma and the reaction area in which the wafer is placed are completely separated, as well as a structure in which the wafer and the discharge part are close to each other, such as a barrel type plasma etching equipment. Good. Moreover, it can be used not only for plasma processing but also for dry processes such as gas etching, photoetching, thermal CVD, or photoCVD. Furthermore, the optical process monitor apparatus of the present invention can be used for various apparatuses that need to acquire monitor information in the thickness direction, such as a CMP apparatus, in addition to the dry process apparatus. Thus, various alternative embodiments, examples and operational techniques will be apparent to those skilled in the art from this disclosure. Therefore, the technical scope of the present invention is defined only by the invention specifying matters according to the scope of claims reasonable from the above description.

1 is a schematic diagram showing an optical process monitor device according to a first embodiment of the present invention. 1 is a cross-sectional view of a semiconductor substrate according to a first embodiment of the present invention. 1 is a plan view of a semiconductor substrate according to a first embodiment of the present invention. FIG. 3 is a schematic diagram showing an optical arrangement relationship between a polarizer and a monitor window according to the first embodiment of the present invention (part 1). FIG. 5 is a schematic diagram showing an optical arrangement relationship between the polarizer and the monitor window according to the first embodiment of the present invention (part 2). 3 is a graph showing a detected waveform spectrum according to the first embodiment of the present invention. FIG. 3 is a schematic diagram showing an optical arrangement relationship between the polarizer and the monitor window according to the first embodiment of the present invention (No. 3). FIG. 6 is a schematic diagram showing an optical arrangement relationship between the polarizer and the monitor window according to the first embodiment of the present invention (part 4). FIG. 3 is a flowchart showing an optical process monitoring method according to the first embodiment of the present invention. 1 is a flowchart showing a method for manufacturing a semiconductor device according to a first embodiment of the present invention. FIG. 3 is a process cross-sectional view of the semiconductor device according to the first embodiment of the present invention (No. 1). FIG. 6 is a process cross-sectional view of the semiconductor device according to the first embodiment of the present invention (No. 2). 1 is a plan view of a semiconductor device according to a first embodiment of the present invention. FIG. 3 is a process cross-sectional view of the semiconductor device according to the first embodiment of the present invention (No. 3). FIG. 4 is a schematic diagram of a dry process apparatus according to a second embodiment of the present invention. 6 is a schematic diagram of a monitor window according to a second embodiment of the present invention. FIG. FIG. 5 is a flowchart showing an optical process monitoring method according to a second embodiment of the present invention. FIG. 5 is a flowchart showing a method for manufacturing a semiconductor device according to a second embodiment of the present invention.

Explanation of symbols

10 ... Optical process monitor
12 ... Light source
14 ... Lens
22 ... Spectroscope
24 ... Detector
26 ... Calculation part
28 ... Monitor information calculation device
30 ... Dry process equipment
35 ... Substrate temperature control means
36 ... Vacuum exhaust system
37… Gas supply system
40, 50… Process chamber
42: Impedance matching device
43 ... High frequency power supply
45… Upper electrode
47… Gas inlet
48 ... Exhaust port
54… Monitor window
55 ... Ceiling window
56… Monitor window
60 ... Polarizer
65… Gas head
66 ... Reaction space
70a, 70b, 70c, 70d, 70e, 70f, 70g, 70h, 70i, 70j, 70k, 70l, 70m, 70n, 70o, 70p, 70q, 70r, 70s, 70t, 70u, 70v, 70w, 70x, 70y… Monitor window gas supply port
71a, 71b, 71c, 71d… Gas supply port
120 ... Monitor optical system

Claims (3)

A process chamber for storing an object to be measured;
A gas head which is arranged opposite to the object to be measured and has a plurality of gas supply ports for supplying a reactive gas to the surface of the object to be measured;
A light source for irradiating the object to be measured with inspection light;
A light-transmitting monitor window disposed in the gas head so as to transmit the inspection light to the process chamber, the monitor window supplying the reactive gas to the object to be measured on the inspection light transmission surface A monitor window that has a plurality of gas supply ports, and transmits the inspection light with a beam diameter larger than the diameter of the monitor window gas supply port without focusing the inspection light on the transmission surface ;
An optical process monitor device comprising: a monitor information calculation device that detects reflected light of the inspection light from the surface of the object to be measured. A step of storing an object to be measured in a process chamber that is disposed in a gas head having a plurality of gas supply ports and includes a light-transmissive monitor window having a plurality of monitor window gas supply ports;
Irradiating inspection light from the monitor window toward the object to be measured;
Condensing the inspection light such that the inspection light passes through the monitor window with a beam diameter larger than the diameter of the monitor window gas supply port without focusing on the inspection light transmission surface of the monitor window. When,
Supplying a reactive gas to the object to be measured through the gas supply port and the monitor window gas supply port ;
And detecting the reflected light from the surface of the object to be measured that has passed through the monitor window with the beam diameter during the supply of the reactive gas to obtain monitor information. Formula process monitoring method. Forming an insulating film on the semiconductor substrate;
Forming an etching mask on the surface of the insulating film;
The semiconductor substrate on which the etching mask is formed is housed in a process chamber that is disposed in a gas head having a plurality of gas supply ports and is provided with a light-transmissive monitor window having a plurality of monitor window gas supply ports. Steps,
The inspection light is irradiated from the monitor window toward the surface of the semiconductor substrate, and the inspection light has a beam larger than the diameter of the monitor window gas supply port without focusing on the inspection light transmission surface of the monitor window. Condensing the inspection light to pass through the monitor window with a diameter;
Supplying a reactive gas into the process chamber from the gas supply port and the monitor window gas supply port ;
Dry etching the insulating film in the process chamber;
Detecting the reflected light from the insulating film of the inspection light transmitted through the monitor window with the beam diameter during the dry etching, detecting an end point of the dry etching, and stopping the dry etching; A method for manufacturing a semiconductor device, comprising:

Images