JP4508738B2 - Heat stabilizer - Google Patents
Heat stabilizer Download PDFInfo
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- JP4508738B2 JP4508738B2 JP2004179608A JP2004179608A JP4508738B2 JP 4508738 B2 JP4508738 B2 JP 4508738B2 JP 2004179608 A JP2004179608 A JP 2004179608A JP 2004179608 A JP2004179608 A JP 2004179608A JP 4508738 B2 JP4508738 B2 JP 4508738B2
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Description
本発明は、ＳＯＧ（ＳｉＯ２）膜やレジスト膜の安定化を図るための熱安定化装置に関する。 The present invention relates to a thermal stabilization apparatus for stabilizing an SOG (SiO 2 ) film or a resist film.
基板表面に塗布したＳＯＧ液やレジスト液を加熱硬化せしめる際に紫外線を照射することで、熱的に安定した被膜が得られることが従来から特許文献１〜３に開示されている。 Conventionally, Patent Documents 1 to 3 disclose that a thermally stable film can be obtained by irradiating ultraviolet rays when the SOG solution or resist solution applied to the substrate surface is cured by heating.
特許文献１に開示される熱安定化装置は、ボックス状ケース内にウェーハの保持台を設け、この保持台の上方に紫外線ランプを、下方にオゾンを生成するための電極を配置した構造になっている。 The thermal stabilization device disclosed in Patent Document 1 has a structure in which a wafer holder is provided in a box-shaped case, an ultraviolet lamp is disposed above the holder, and an electrode for generating ozone is disposed below the holder. ing.
特許文献２及び３に開示される熱安定化装置は、テーブルに開口部が形成され、この開口部に下方から加熱部材を備えたステージを挿入可能とし、また開口部の上面を透明板で閉塞し、この透明板とステージ上面との間に密閉された処理空間を形成し、この処理空間を真空引き装置につなげるとともに処置空間内のウェーハ（処理基板）に透明板の上方に配置した紫外線ランプから紫外線を照射する構造になっている。
上述した従来の熱安定化装置において問題となるのは、経時的な紫外線ランプの劣化と、処理空間内面の汚れである。
即ち、熱安定化装置は高温下で使用されるため、紫外線ランプの劣化が早く、この劣化は徐々に起こるため、ランプの交換時期の見極めが遅れると、耐熱性に優れた被膜が得られず、交換が早いとコスト的に不利が生じ、更に処理空間内における反応によって紫外線が透過する透明板の内面が汚れ、紫外線が劣化していないにも拘らず、紫外線強度が不足することがある。
The problems in the above-described conventional thermal stabilization apparatus are deterioration of the ultraviolet lamp over time and contamination of the inner surface of the processing space.
In other words, since the heat stabilizer is used at high temperatures, the UV lamp deteriorates quickly, and this deterioration occurs gradually. If the lamp replacement timing is delayed, a film with excellent heat resistance cannot be obtained. If the replacement is fast, there is a disadvantage in terms of cost, and the inner surface of the transparent plate through which the ultraviolet rays are transmitted due to the reaction in the processing space may become dirty and the ultraviolet intensity may be insufficient even though the ultraviolet rays are not deteriorated.
上記課題を解決するため、本発明に係る熱安定化装置は、少なくとも一部を透明板とした蓋体でテーブルに形成した開口部の上面が閉塞され、前記開口部に処理基板を載置したステージを下方から臨ませ、ステージに設けた加熱部材で処理基板を加熱し、また蓋体上方に配置した紫外線ランプから紫外線を照射しつつ、前記ステージ上面と蓋体下面と開口部側面とで形成される処理空間内で処理基板を減圧処理する熱安定化装置において、前記紫外線ランプをテーブルに対し昇降可能とされた保持部に取り付けた。 In order to solve the above-described problem, the thermal stabilization device according to the present invention is such that the upper surface of the opening formed in the table is closed with a lid having at least a part of a transparent plate, and a processing substrate is placed in the opening. The stage is faced from below, the processing substrate is heated by a heating member provided on the stage, and the stage is formed by the upper surface of the stage, the lower surface of the lid, and the side of the opening while irradiating ultraviolet rays from an ultraviolet lamp disposed above the lid. In the thermal stabilization apparatus that decompresses the processing substrate in the processing space, the ultraviolet lamp is attached to a holder that can be raised and lowered with respect to the table.
上記構成とすることで、例えば、前記処理空間内の紫外線照度若しくは紫外線ランプから発せられる紫外線照度を検出するセンサを設け、このセンサによる検出が所定の値になるように前記保持部を昇降動せしめることで、一定の強度の紫外線を処理基板に照射することができる。 With the above configuration, for example, a sensor for detecting ultraviolet illuminance in the processing space or ultraviolet illuminance emitted from an ultraviolet lamp is provided, and the holding unit is moved up and down so that the detection by the sensor becomes a predetermined value. Thus, the processing substrate can be irradiated with a certain intensity of ultraviolet rays.
本発明に係る熱安定化装置は、紫外線ランプと処理基板との距離が調整可能なため、紫外線ランプの劣化あるいは処理空間を画成する透明板の内側の汚れなどが生じても、一定強度の紫外線を処理基板に照射することができる。 Since the distance between the ultraviolet lamp and the processing substrate can be adjusted, the thermal stabilization device according to the present invention has a constant strength even if the ultraviolet lamp is deteriorated or the inside of the transparent plate that defines the processing space is stained. Ultraviolet rays can be irradiated to the processing substrate.
したがって、例えば厚膜用のレジスト液を処理基板表面に塗布した後、露光及び現像を行い、更に本発明に係る熱安定化装置を用いて、真空下で紫外線を照射することで、レジスト膜の耐熱性が向上し、その後に行なうエッチング工程でのエッチング形状が向上する。 Therefore, for example, after applying a resist solution for a thick film on the surface of the processing substrate, exposure and development are performed, and further, irradiation of ultraviolet rays is performed under vacuum using the thermal stabilization device according to the present invention. The heat resistance is improved, and the etching shape in the subsequent etching process is improved.
また、レジスト膜でパターンを形成し、パターンとパターンの間にめっきを施す場合、予め本発明に係る熱安定化装置を用いて、真空下で紫外線を照射しておくことで、レジストの接触角を下げることができ、めっき液の密着性が向上し、まためっきの膨張を抑制して良好なめっき形状を得ることができる。 In addition, when a pattern is formed with a resist film and plating is performed between the patterns, the contact angle of the resist is obtained by irradiating ultraviolet rays under vacuum using the thermal stabilization device according to the present invention in advance. , The adhesion of the plating solution can be improved, and the expansion of the plating can be suppressed to obtain a good plating shape.
以下に本発明の実施の形態を添付図面に基づいて説明する。図１は本発明に係る熱安定化装置の全体構成図、図２は同熱安定化装置のランプハウジングが下降した状態を示す図である。 Embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is an overall configuration diagram of a thermal stabilization device according to the present invention, and FIG. 2 is a diagram showing a state where a lamp housing of the thermal stabilization device is lowered.
熱安定化装置はベース１にテーブル２が固定され、このテーブル２には開口部３が形成され、この開口部３の上面は透明板からなる蓋体４で気密に閉塞され、また開口部３の内周面には真空引き用の通路５及びパージ用の通路６が形成され、
真空引き用の通路５はチューブ７を介して図示しない真空源（真空ポンプ）に接続され、パージ用の通路６には不活性ガス供給配管８が接続されている。
In the heat stabilizing device, a table 2 is fixed to a base 1, an opening 3 is formed in the table 2, and the upper surface of the opening 3 is hermetically closed by a lid 4 made of a transparent plate. Are formed with a evacuation passage 5 and a purge passage 6 on the inner peripheral surface thereof.
The evacuation passage 5 is connected to a vacuum source (vacuum pump) (not shown) via a tube 7, and an inert gas supply pipe 8 is connected to the purge passage 6.
ベース１上には昇降部材１ａを介してステージ９が支持されている。このステージ９は前記開口部３の下方に位置し、上半部の径は開口部３よりも小径でその上面にはウェーハなどの処理基板Ｗが載置可能とされ、上半部の内部にはホットプレートなどの加熱部材１０が設けられ、下半部は開口部３よりも大径とされ、その上面にはシール部材１１が設けられている。 A stage 9 is supported on the base 1 via an elevating member 1a. The stage 9 is positioned below the opening 3, the upper half has a smaller diameter than the opening 3, and a processing substrate W such as a wafer can be placed on the upper surface of the stage 9. Is provided with a heating member 10 such as a hot plate, the lower half has a larger diameter than the opening 3, and a seal member 11 is provided on the upper surface thereof.
一方、テーブル２の上方にはランプハウジング１２が配置されている。このランプハウジング１２は紫外線ランプ１３と反射板１４からなり、またランプハウジング１２はシリンダダユニット或いはボールネジ機構を組み込んだ昇降部材１５に支持されている。 On the other hand, a lamp housing 12 is disposed above the table 2. The lamp housing 12 includes an ultraviolet lamp 13 and a reflecting plate 14, and the lamp housing 12 is supported by an elevating member 15 incorporating a cylinder unit or a ball screw mechanism.
また、前記開口部３の内周面で、ステージ９の上昇限よりも上の位置には紫外線センサ１６が取り付けられ、蓋体４とランプハウジング１２との間には開閉自在なシャッター１７が配置されている。 An ultraviolet sensor 16 is mounted on the inner peripheral surface of the opening 3 above the upper limit of the stage 9, and an openable / closable shutter 17 is disposed between the lid 4 and the lamp housing 12. Has been.
以上において、紫外線を照射して熱安定化処理を行なうには、先ず図１に示すように、ステージ９を下降せしめて上面に処理基板Ｗを載置する。この後、加熱部材１０によって基板表面に露光・現像したレジスト膜が形成されている処理基板Ｗを所定温度まで加熱する。 In the above, in order to perform the thermal stabilization process by irradiating the ultraviolet rays, first, as shown in FIG. Thereafter, the processing substrate W, on which the resist film exposed and developed on the substrate surface is formed by the heating member 10, is heated to a predetermined temperature.
処理基板Ｗは後述するように減圧下で紫外線が照射されレジスト成分の架橋反応が促進されるが、減圧下では熱が伝わりにくく処理基板Ｗを所定温度まで加熱するのに時間がかかる。そこで、本実施例では前もって処理基板Ｗを所定温度まで加熱しておくことで、トータルの処理時間の短縮を図っている。 As will be described later, the processing substrate W is irradiated with ultraviolet rays under reduced pressure and the crosslinking reaction of the resist component is promoted. However, under the reduced pressure, heat is hardly transmitted and it takes time to heat the processing substrate W to a predetermined temperature. Therefore, in this embodiment, the total processing time is shortened by heating the processing substrate W to a predetermined temperature in advance.
次いで、ステージ９のシール部材１１がテーブル２の下面に当接するまでステージ９を上昇せしめる。このステージ９の上昇によって、ステージ９の上面と蓋体４下面と開口部３内周面にて画成される気密な処理空間Ｓが形成される。 Next, the stage 9 is raised until the seal member 11 of the stage 9 contacts the lower surface of the table 2. As the stage 9 is raised, an airtight processing space S defined by the upper surface of the stage 9, the lower surface of the lid 4 and the inner peripheral surface of the opening 3 is formed.
気密な処理空間Ｓが形成されたならば、通路５を介して処理空間Ｓ内を減圧するとともに、シャッター１７を開とし、紫外線ランプ１３をオンにする。紫外線ランプ１３をオンにすると紫外線が処理空間Ｓの処理基板Ｗに照射され、またこの紫外線強度をセンサ１６によって検知する。 If the airtight processing space S is formed, the inside of the processing space S is depressurized through the passage 5, the shutter 17 is opened, and the ultraviolet lamp 13 is turned on. When the ultraviolet lamp 13 is turned on, ultraviolet rays are applied to the processing substrate W in the processing space S, and the intensity of the ultraviolet rays is detected by the sensor 16.
処理基板Ｗに照射する紫外線強度については予め決めておき、この値とセンサ１６で検出した紫外線強度とが異なる場合には、昇降部材１５によってランプハウジング１２を昇降動させ、所定の強度の紫外線を処理基板Ｗに照射する。このようにして、処理基板Ｗの表面に形成したレジスト膜に、減圧下で、加熱と紫外線照射を施すことで、熱安定化処理が終了し、この後は通路６を介して処理空間Ｓ内に不活性ガスを充填し、処理基板Ｗを払い出し、この後例えばエッチングにてパターンを形成したり、パターン間にめっき液を供給する。 The intensity of ultraviolet rays applied to the processing substrate W is determined in advance. If this value and the intensity of ultraviolet rays detected by the sensor 16 are different, the lamp housing 12 is moved up and down by the elevating member 15 to emit ultraviolet rays having a predetermined intensity. Irradiate the processing substrate W. In this way, the resist film formed on the surface of the processing substrate W is subjected to heating and ultraviolet irradiation under reduced pressure, whereby the thermal stabilization processing is completed. Thereafter, the processing space S passes through the passage 6. The substrate is filled with an inert gas, the processed substrate W is discharged, and then a pattern is formed by, for example, etching, or a plating solution is supplied between the patterns.
図３は別実施例を示す図２と同様の図であり、この実施例では、蓋体４の上面に透明板４１を嵌めこむとともに、蓋体４の側面にも透明板を嵌め込んだ窓部４２を形成し、この窓部４２の外側となるテーブル２の段部に紫外線センサ４３を設け、更にランプハウジング１２の内側部にも紫外線センサ４４を設け、これら紫外線センサ４３，４４の検出信号を制御装置４５に出力し、制御装置４５ではセンサ４３，４４からの信号に基づいてランプハウジング１２を昇降動せしめる。 FIG. 3 is a view similar to FIG. 2 showing another embodiment. In this embodiment, a window in which a transparent plate 41 is fitted on the upper surface of the lid 4 and a transparent plate is fitted on the side of the lid 4 is also shown. The ultraviolet sensor 43 is provided on the step portion of the table 2 that is outside the window 42, and the ultraviolet sensor 44 is also provided on the inner side of the lamp housing 12. Is output to the control device 45, and the control device 45 moves the lamp housing 12 up and down based on signals from the sensors 43 and 44.
具体的には、ランプハウジング１２の内側部に設けたセンサ４４が検出した値が制御装置４５に出力される。制御装置４５には予め設定値が入力されており、この設定値よりもセンサ４４の検出値が小さい場合には紫外線ランプ１３が劣化したと判断し、制御装置４５は昇降部材１５に所定位置まで下がる信号を発し、所定の照度を維持する。 Specifically, the value detected by the sensor 44 provided inside the lamp housing 12 is output to the control device 45. A set value is input in advance to the control device 45. If the detection value of the sensor 44 is smaller than this set value, it is determined that the ultraviolet lamp 13 has deteriorated, and the control device 45 moves the elevating member 15 to a predetermined position. A falling signal is generated to maintain a predetermined illuminance.
一方、窓部４２の外側に設けられた紫外線センサ４３も処理空間Ｓ内の紫外線照度を検出する。この紫外線センサ４３による検出値が低下している場合の原因は、紫外線ランプ１３が劣化したか、窓部４２の内側面が反応生成物で汚れてしまったかの何れかである。 On the other hand, the ultraviolet sensor 43 provided outside the window part 42 also detects the ultraviolet illuminance in the processing space S. The cause when the detection value by the ultraviolet sensor 43 is lowered is either that the ultraviolet lamp 13 has deteriorated or the inner side surface of the window portion 42 has been contaminated with the reaction product.
そして、この場合において前記センサ４４による検出値が正常であると、窓部４２の内側面が汚れていると判断され、同時に透明板４１の内面も汚れていると判断できるので、処理空間Ｓ内の清掃を行なう。このようにセンサを２つ設けることで、処理空間の内面の汚れを知ることができ、効率のよいタイミングで処理空間内を清掃することが可能になる。 In this case, if the detection value by the sensor 44 is normal, it is determined that the inner surface of the window 42 is dirty, and at the same time, it can be determined that the inner surface of the transparent plate 41 is also dirty. Clean. By providing two sensors in this way, it is possible to know the stain on the inner surface of the processing space, and it is possible to clean the processing space at an efficient timing.
本発明に係る熱安定化装置は、レジストにてパターンを形成し、このパターンを形成し、エッチングにて基板に加工する場合、またこのパターン間にめっきを施す場合等に予めレジスト膜を安定化せしめる工程で使用される。 The thermal stabilization apparatus according to the present invention stabilizes a resist film in advance when a pattern is formed with a resist, this pattern is formed, and processed into a substrate by etching, or when plating is applied between the patterns. Used in the caulking process.
１…ベース、２…テーブル、３…開口部、４…蓋体、５…真空引き用の通路、６…パージ用の通路、７…チューブ、８…不活性ガス供給配管、９…ステージ、１０…加熱部材、１１…シール部材、１２…ランプハウジング、１３…紫外線ランプ、１４…反射板、１５…昇降部材、１６…紫外線センサ、１７…シャッター、４１…透明板、４２…窓部、４３，４４…紫外線センサ、４５…制御装置、Ｓ…処理空間、Ｗ…処理基板。 DESCRIPTION OF SYMBOLS 1 ... Base, 2 ... Table, 3 ... Opening part, 4 ... Cover body, 5 ... Passage for evacuation, 6 ... Passage for purge, 7 ... Tube, 8 ... Inert gas supply piping, 9 ... Stage, 10 DESCRIPTION OF SYMBOLS ... Heating member, 11 ... Seal member, 12 ... Lamp housing, 13 ... Ultraviolet lamp, 14 ... Reflector, 15 ... Elevating member, 16 ... Ultraviolet sensor, 17 ... Shutter, 41 ... Transparent plate, 42 ... Window part, 43, 44 ... UV sensor, 45 ... Control device, S ... Processing space, W ... Processing substrate.
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| KR102055014B1 (en) * | 2011-03-23 | 2020-01-22 | 노벨러스 시스템즈, 인코포레이티드 | Measuring in-situ uv intensity in uv cure tool |
| JP6596257B2 (en) * | 2015-08-03 | 2019-10-23 | 東京応化工業株式会社 | Ultraviolet irradiation apparatus and ultraviolet irradiation method |
| US10388546B2 (en) | 2015-11-16 | 2019-08-20 | Lam Research Corporation | Apparatus for UV flowable dielectric |
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| JPS63260028A (en) * | 1986-11-19 | 1988-10-27 | Tokyo Ohka Kogyo Co Ltd | Heat stabilizer for photoresist |
| JPH0761853B2 (en) * | 1987-04-06 | 1995-07-05 | 東京応化工業株式会社 | Method and apparatus for forming silicon oxide film |
| JPH06104169A (en) * | 1992-09-21 | 1994-04-15 | Fujitsu Ltd | Semiconductor manufacturing equipment |
| JP2004073981A (en) * | 2002-08-15 | 2004-03-11 | Tokyo Ohka Kogyo Co Ltd | Internal cleaning method for thermal stabilization device |
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