JP4534210B2 - Optical delay device, illumination optical device, exposure apparatus and method, and semiconductor device manufacturing method - Google Patents

Description

  The present invention relates to an exposure apparatus for manufacturing a semiconductor element, and more particularly to an optical delay element used in an illumination optical apparatus used in the exposure apparatus.

A conventional illumination optical device is disclosed in, for example, Japanese Patent Laid-Open No. 1-198759 (Patent Document 1).
In general, when the half width of a laser light source is Δλ and the wavelength is λ, the temporal coherence length (coherence length) tc is
tc = λ ² / Δλ
Given in. When the wavelength λ = 248 nm and the half width Δλ = 0.8 pm, the temporal coherence length tc = 77 mm. When the wavelength λ = 248 nm and the half width Δλ = 0.6 pm, the temporal coherence length tc = 103 mm. Therefore, conventionally, as shown in FIG. 10, by inserting an optical delay element composed of a half mirror and a reflection member in the optical path, an optical path difference equal to or greater than the coherence length is provided, thereby reducing coherency. I was measuring. The optical delay element, in principle, emits light indefinitely in the delay optical path, but the half mirror reflectivity is about 33% to 50% due to the reflectivity of the half mirror and the reflectivity of the reflecting member. It is general to set to. By setting the reflectivity to such a value, when the light energy of about 1% is taken, the light delay element can be used up to light that comes out about 2 to 3 times.
Japanese Patent Laid-Open No. 1-198759

  In the conventional optical delay element, no consideration has been given to the influence when there is an angle shift.

  Therefore, an object of the present invention is to prevent the performance from being greatly affected even if there is an angle shift.

In the present invention, an optical delay device that is used together with an exposure apparatus that exposes a wafer , splits a light beam from a coherent light source, passes one of the divided light beams to a delay optical path, and returns it to the split optical path again. An optical element having a concave mirror that conjugates an entrance and an exit of the optical delay element, and reduces energy of the one split light flux and the other split light flux that have passed through the delay optical path. Also provided is an optical delay device that emits light at a predetermined angle in order to shift speckle on the wafer .

According to the present invention, there is provided an illumination optical apparatus comprising the above-described optical delay device and illuminating a surface to be irradiated based on light from the coherent light source.
According to the present invention, there is provided an exposure apparatus comprising the illumination optical apparatus described above and a projection optical system that projects a pattern illuminated by the illumination optical apparatus onto a substrate.
The present invention also provides an exposure method characterized in that a pattern is illuminated by the illumination optical device and the pattern is projected and exposed onto a wafer using a projection optical system.
According to another aspect of the present invention, there is provided a method for manufacturing a semiconductor device, wherein a pattern is illuminated by the illumination optical device, and the pattern is projected and exposed on a wafer using a projection optical system.

  As described above, according to the present invention, even if there is an angle shift, the performance can not be greatly affected.

  The excimer laser uses a diffraction grating (grating) G in order to narrow the half width of the spectral distribution. In this way, in the case of a laser light source having the grating G inside, as shown in FIG. 9, on the exit slit S of the spectroscopic portion (for example, + p / 2, 0, − in FIG. 9A). A wavelength distribution occurs at the (p / 2 position). That is, the spectral distribution of the entire light source is formed by gathering a large number of spectral distributions of minute light sources formed on the exit slit of the spectroscopic portion.

In this way, in the case of a light source that is considered to be formed of a large number of minute elementary light sources, spatial resolution p that can be observed by separating adjacent minute light sources (this is roughly estimated from the divergence angle ω of the excimer laser) Is possible (p˜λ / ω) is smaller (smaller) than the slit width P, the coherence length tcp is obtained from the wavelength distribution Δλp within the spatial resolution.
tcp = λ ² / Δλp
It is necessary to think in. (Here, tc <tcp.) The reason is that when many images of this slit are generated by the delay element, the delay optical path length is only the coherence length tc determined from the total wavelength distribution of the slit. This is because light from an arbitrary spatial resolution size of each slit image interferes with each other. Due to this interference, interference fringes and speckles are generated on the irradiated surface.

For example, in the case of the excimer laser described in the prior art, tcp = 154 mm when the half width Δλ = 0.8 pm, and tcp = 206 mm when the half width Δλ = 0.6 pm.
In the present invention, the optical path length of the delay optical path of the optical delay element is made longer than the coherence length tcp determined by the wavelength distribution of light within the spatial resolution of the slit of the coherent light source, or conjugated with the reticle that is the irradiated surface. By making it longer than the coherence length tcp determined by the wavelength distribution of light within the spatial resolution at a position near the light source, illumination unevenness can be eliminated.

  In the above description, it has been described that the wavelength distribution is generated on the exit slit of the spectroscopic portion. However, it is sufficient that the emitted light beam has a characteristic that causes the wavelength distribution. In the above description, an excimer laser is taken as an example. However, the present invention can be applied to not only an excimer laser but also a coherent light source having a characteristic formed by a large number of microscopic coherent light sources gathered together. It is effective and can reduce coherence.

  An embodiment of the basic arrangement of the illumination optical device according to the present invention will be described below with reference to FIG. In the illumination optical apparatus of the embodiment shown here, an excimer laser 1, a depolarizer 3, a first optical delay element 4, a second optical delay element 5, and a fly-eye optical integrator 7 are arranged in the order of the optical paths. In order to effectively use the space in the chamber of the illumination optical device, several mirrors are arranged between these elements, and the optical path is bent.

  As shown in FIG. 2, the depolarizer 3 includes polarizing beam splitters 31 and 34 and reflecting mirrors 32 and 33. The polarization beam splitter 31 separates the incident light beam into P-polarized light and S-polarized light and emits it. The P-polarized light travels in the order of the polarizing beam splitter 31 and the polarizing beam splitter 34, and the S-polarized light travels in the order of the polarizing beam splitter 31, the reflecting mirror 32, the reflecting mirror 33, and the polarizing beam splitter 31. Here, the polarization beam splitters 31 and 34 are used by applying a thin film to a quartz substrate or the like and tilting the incident angle from about 56.5 degrees to about 65 degrees depending on the design of the thin film. Reflect S-polarized light and transmit P-polarized light. Further, the reflected S-polarized light is separated from the optical path by the reflection mirror 31 by a distance where the optical path length is equal to or greater than the coherence length tcp = 154 mm, which is a wavelength distribution within the spatial resolution of the slit. Then, both the S and P polarizations are returned to the same optical path by the beam splitter 34.

This depolarizer 3 eliminates amplitude interference between P-polarized light and S-polarized light, but circularly polarized light derived from P-polarized light and S-polarized light, and elliptically polarized light also have no amplitude interference. Therefore, a depolarized state can be achieved even on a wafer (not shown).
Adjustment of the depolarizer 3 is generally performed by using an autocollimator as a single unit. Therefore, a reflective film that reflects excimer light is deposited on the surface of the reflecting mirror, and a reflective film that reflects visible light is deposited on the back surface. By using a reflection mirror deposited with such a reflection film, it is possible to eliminate the step of extracting and adjusting the depolarizer part and returning it to the optical path again as in the prior art. As described above, the adjustment of the depolarizer 3 in the present embodiment can be performed by the autocollimator while being arranged in the optical path. The degree of polarization is adjusted by rotating the whole around the optical axis.

  As shown in FIG. 3A, the optical delay element 4 is composed of a half mirror 41 and three reflecting mirrors 41, 42, 43, and a 2d optical path between the light reflected by the half mirror 40 and the transmitted light. They are arranged so that a difference occurs. This is because the polarization can be removed in the divided wave train and the coherency can be reduced. In the present embodiment, the light beam that first passes through the half mirror 41 is the basic light beam. Here, the reflectance of the half mirror 41 is about 33% to 50% on average.

  Further, as shown in FIG. 3B, the second optical delay element 5 is composed of a half mirror 51 and three reflection mirrors 52, 53, 53, and is set so as to produce a 6d optical path difference. is there. Similarly to the first optical delay element 4, a light beam that first passes through the half mirror 51 is a basic light beam. In this way, if the delay optical path length of the first optical delay element 4 and the delay optical path length of the second optical delay element 5 are set, as shown in Table 2, the optical path difference is the same in the nine split lights. You can avoid it. As described above, if the light is approximately 1% or more in terms of time, the coherency can be reduced by dividing the light into nine. If the light is 0.1% or more, it is preferably divided into 18 parts.

  Further, as shown in FIG. 4, when the light incident directions of both optical delay elements are set to be orthogonal to each other between the first and the second, and the angle θ is set to pass every time, the fly eye 6 is The incident light beam is divided into nine lights of approximately 1% or more. This not only reduces energy, but also has the effect of shifting speckle on the wafer.

  Also, since the reflectivity of the half mirror differs between P-polarized light incidence and S-polarized light incidence, as shown in FIG. 5, the first and second composite reflectances are P-polarized light and S-polarized light by making the orientations orthogonal. And almost the same. Therefore, there is also an effect that the polarization state of the light beam incident on the fly eye does not change so much. Furthermore, as shown in FIG. 6, since the light profiles are inverted between the direct light b and the reflected lights c and d, there is also an effect of averaging the laser light profiles.

  The reflective mirrors of the first optical delay element 4 and the second optical delay element 5 are formed by depositing a thin film that mainly reflects excimer light, which is the main wavelength, on the front surface and reflects mainly visible light such as green on the back surface. ing. This is because the autocollimator is used to adjust the declination, and each mirror is adjusted by adjusting the adjustment angle. May occur and the declination may be crazy. Using a mirror that reflects excimer light and visible light eliminates the need for replacement.

In the case of a KrF excimer laser, a reflection mirror can be used at the time of filing of the present application. However, in the case of an ArF laser or a light source having a wavelength shorter than that, the reflectivity is not so high, so there is a possibility that the mirror cannot be used. In that case, as shown in FIG. 7, instead of the mirror, 45-degree prisms 45, 46, 47, 48, 55, 56, 57, and 58 such as fluorite are used to make an optical path using total reflection. Just bend.
Here, as shown in FIG. 7B, when the relay lenses 61 and 62 are arranged in the optical delay element, an optical system that does not greatly affect the performance even if an angular deviation occurs can be configured. Similarly, if the mirror itself is a concave mirror and the entrance and exit are conjugated instead of the relay lens, an optical system that does not greatly affect the performance even if an angular deviation occurs can be configured.

  Further, a detailed example of the entire exposure light apparatus for manufacturing a semiconductor element is shown below. As shown in FIG. 9, the basic arrangement of the illumination optical apparatus arranged in the projection exposure apparatus is the same as that in the above-described embodiment. More specifically, a relay is provided between the depolarizer 3 and the first optical delay element 4. A lens 2 is provided, an expander optical system 6 is provided between the second optical delay element 6 and the fly-eye optical integrator 7, and a condenser lens 8 is disposed on the exit side of the fly-eye optical integrator 7.

Here, the expander optical system 6 includes a cylindrical expander and an expander, and the rectangular shape of the excimer laser 1 is changed to a square shape. The fly eye optical integrator 7 includes a first fly eye 71 and a second fly eye 72. The first fly's eye 71 is a regular arrangement of rectangular fly-eye lens elements, and the second fly's eye 72 is an irregular arrangement of rectangular fly-eye lens elements. The light beam emitted from the fly-eye optical integrator 7 is uniformly Koehler-illuminated by the condenser lens 8 on the reticle 9 that is the irradiated surface.
Then, the wafer 11 as an exposure surface is conjugate with the reticle 9 via the projection objective lens 10, and the pattern of the reticle 9 is transferred onto the surface of the wafer 11. In this case, the magnification is preferably 1/4 or 1/5, and actual exposure is performed by scanning the reticle 9 and the wafer 11.

  Here, ideally, it is desirable that the length be longer than the coherence length tcp determined by the wavelength distribution of the light within the spatial resolution of the slit, but the light within the spatial resolution at a position near the light source conjugate with the irradiated surface. It may be longer than the coherence length tcp determined by the wavelength distribution. This is because the light source image on this conjugate plane is superimposed by the delay element, so that if it is longer than the coherence distance tcp here, unnecessary interference fringes and speckles are not generated. The coherence distance here is generally considered to be shorter than the coherence distance on the slit, and a more practical configuration can be achieved.

FIG. 1 is a diagram showing an illumination optical apparatus according to the present invention. FIG. 2 is a diagram illustrating a depolarizer according to the present invention. FIG. 3 is a diagram illustrating an optical delay element according to the present invention. FIG. 4 is a diagram for explaining the operation of the optical delay element according to the present invention. FIG. 5 shows a half mirror according to the present invention. FIG. 6 is a diagram for explaining the operation of the optical delay element according to the present invention. FIG. 7 is a diagram showing an embodiment using a 45 degree prism. FIG. 8 shows an exposure apparatus according to the present invention. FIG. 9 is a diagram showing an emission light distribution of the excimer laser. FIG. 10 is a diagram of a conventional example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Excimer laser 2 Relay lens 3 Depolarizer 4 1st optical delay element 5 2nd optical delay element 6 Expander optical system 7 Fly eye optical integrator 8 Condenser lens 9 Reticle 10 Projection objective lens 11 Wafer

Claims (7)

An optical delay device used together with an exposure apparatus for exposing a wafer, wherein the optical delay device divides a light beam from a coherent light source , passes one of the divided light beams to a delay optical path, and returns to the split optical path again.
A concave mirror that conjugates the entrance and exit of the optical delay element;
The one split light flux that has passed through the delay optical path and the other split light flux are emitted at a predetermined angle in order to reduce energy and shift speckle on the wafer. An optical delay device. An illumination optical apparatus comprising the optical delay device according to claim 1 and illuminating a surface to be irradiated based on light from the coherent light source. The illumination optical apparatus according to claim 2, further comprising a fly-eye optical integrator disposed between the optical delay device and the irradiated surface. 4. The illumination optical apparatus according to claim 2, wherein the coherent light source includes an excimer laser. An exposure apparatus comprising: the illumination optical apparatus according to claim 2; and a projection optical system that projects a pattern illuminated by the illumination optical apparatus onto a substrate. 5. An exposure method comprising: illuminating a pattern with the illumination optical apparatus according to claim 2; and projecting and exposing the pattern onto a wafer using a projection optical system. 5. A semiconductor device manufacturing method, comprising: illuminating a pattern with the illumination optical device according to claim 2; and projecting and exposing the pattern onto a wafer using a projection optical system.

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