JP4538441B2 - Electron beam application equipment - Google Patents

Description

  The present invention relates to an electron gun such as an electron microscope and an electronic drawing apparatus, and more particularly to downsizing of an electron gun.

A conventional scanning electron microscope (SEM) or electron beam lithography system (EB) accelerates an electron beam emitted from an electron gun composed of a field emission type or thermal field emission type electron source, and uses an electron lens. A thin electron beam is used as a primary electron beam to scan on the sample using a scanning deflector, and an image is obtained by detecting secondary electrons or reflected electrons obtained in the case of SEM, and in the case of EB. A pattern registered in advance on a resist film coated on a sample is drawn. As a material for the electron source, tungsten is used in the case of a general-purpose SEM.
In addition, an electron source for semiconductors may contain zirconia in tungsten. Further, in the case of EB, LaB ₆ may be used.

In order to emit a good electron beam from the electron source over a long period of time, it is necessary to maintain a high vacuum (10 ⁻⁹ to 10 ⁻¹⁰ Torr) around the electron source. For this reason, conventionally, as shown in FIG. 2, a method of forcibly evacuating the periphery of the electron gun 16 with the ion pump 13 has been adopted. Although the ion pump 13 has an advantage that it can be maintained at a pressure of 10 ⁻¹⁰ Torr or less only by energization without moving parts, it has a size of several tens of cm square or more and generates a magnetic field. A considerable volume is required, for example, the magnetic shield 15 is required.

Japanese Patent Laid-Open No. 2000-149850 discloses a charged particle beam apparatus in which a getter ion pump is built in a lens barrel as means for reducing the size of an electron optical system. Further, FIG. 3 of US Pat. No. 4,833,362 and [0] of JP-A-6-111745
[033] The paragraph and FIG. 2 disclose a charged particle beam device incorporating a non-evaporable getter pump in an electron gun chamber. Here, the getter pump is a vacuum pump that activates and volatilizes the getter by heating and adsorbs impurities to the getter. The non-evaporable getter pump is a vacuum pump configured using an alloy that adsorbs gas only by heating the getter without evaporating it. From the viewpoint of miniaturization, the non-evaporable getter pump is more suitable.

Furthermore, paragraph [0014] of Japanese Patent Laid-Open No. 2000-294182 discloses an electron gun in which an axis adjusting screw for adjusting the axis of an electron source is provided on the circumference of the flange. Further, FIG. 9 of JP-A-6-188294 discloses a charged particle device having a differential evacuation structure for maintaining an ultrahigh vacuum around the electron source. Furthermore, in JP 2001-325912 A, the hydrocarbon-based gas remaining in the sample chamber is reacted with active oxygen introduced into the sample chamber, thereby being decomposed into water and carbon dioxide that are easily exhausted. A technique for improving the exhaust efficiency of the vacuum chamber is disclosed.

JP 2000-149850 A

US Pat. No. 4,833,362 JP-A-6-111745 JP 2000-294182 A JP-A-6-188294 JP 2001-325912 A

When a field emission type electron gun is used, a high degree of vacuum of 10 ⁻⁹ to 10 ⁻¹⁰ Torr is required, and a dedicated ion pump 12 is used for evacuating the electron gun column 11. In the conventional technique, as shown in FIG. 2, since the ion pump is large and the magnetic field is leaked, it is necessary to install it at a certain distance from the electron gun.
In addition, the ion pump housing structure may be made donut-shaped and coaxial with the electron gun column, but the ion pump housing diameter is at least several tens of centimeters, so it is downsized. There were limits.
If a non-evaporable getter pump is used, the electron optical system can be theoretically reduced in size.
However, non-evaporable getter pumps are difficult to evacuate chemically stable gases such as rare gases such as helium and argon, and methane, and cannot substantially maintain a high vacuum, and have not been put into practical use. For the adsorption, the gas needs to have a very small potential. However, in the case of a chemically stable gas such as a rare gas or fluorocarbon, it is difficult to exhaust gas because it is completely balanced.
Furthermore, when the electron source is operated, a part of the emitted electrons hits the components of the electron gun, and a miscellaneous gas is released, which deteriorates the degree of vacuum and consequently shortens the life of the electron gun. There are challenges. In particular, when the electron gun is downsized and the volume is reduced, the total pressure rises even when the partial pressure of the rare gas is low, and the tendency of the degree of vacuum to deteriorate becomes significant.

One of the problems to be solved by the present invention is to provide an electron gun that can maintain a high vacuum even during emission of an electron beam and is smaller than the conventional one. Another object is to provide an electron microscope or an electron beam drawing apparatus equipped with the small electron gun.

The present invention relates to an electron source, a vacuum container holding the electron source, a getter pump provided inside the vacuum container, an opening for evacuating the inside of the vacuum container, The above-described problem is solved by providing a means for decomposing gas generated during operation.

By using the present invention, an electron microscope and an electron beam drawing apparatus having a small electron gun capable of maintaining a high vacuum of 10 ⁻¹⁰ Torr level without requiring an ion pump can be obtained.

FIG. 1 shows the configuration of the electron gun of this embodiment. The electron source is a thermal field emission electron gun (
TFE) 1 is used. The electron source 1 is attached to a flange of the ICF 70 and is coupled to an introduction terminal 12 to an electrode (suppressor, drawer, chip) (not shown).
The electron source 1 is inserted and fixed in an electron gun column 11.
The inner diameter of this column is about 37 mm. The column 11 is provided with a sheet-like non-evaporable getter pump 2 along the inner diameter. The non-evaporable getter pump 2 is activated and sucked by overheating. For this purpose, a first heater 4 is provided outside the electron gun column 11. In this example, a sheathed heater was wound around. In addition to such a heater configuration, it is needless to say that heating means of a non-evaporable getter pump may be provided inside the vacuum vessel, that is, inside the electron gun column. A thermocouple 8 is provided on the side surface of the electron gun column 11 and monitors the heating temperature of the non-evaporable getter pump 2. In the present embodiment, 40
A non-evaporable getter pump activated at 0 ° C. for 10 minutes was used.
A pump unit 101 with an ionization function is provided in a part of the housing of the electron gun column 11. A heating element for decomposing miscellaneous gases generated during emission of the electron gun is stored in the pump unit 101 with an ionization function. In this embodiment, the filament 6 is used as a heating element.
The pump unit 101 with an ionization function may be attached as a separate part to the casing of the electron gun column 11 or may be provided as a part of the casing of the electron gun column 11. Pump unit with ionization function 10
The internal configuration of 1 will be described later.

Next, the operation of each component part of the electron gun will be described. When the electron source 1 emits electrons, a part of the emitted electrons hits a component and releases a gas containing hydrocarbons. The hydrocarbon gas is not exhausted by the non-evaporable getter pump 2 under the condition that the volume of the electron gun column is small and there is no forced exhaust by the ion pump as in this embodiment. Therefore, there is a problem in that the degree of vacuum in the electron gun deteriorates and adversely affects the electron source 1.
For this purpose, a pump unit 101 with an ionization function including a tungsten filament 6 is provided on the side surface of the electron gun column 11. The filament 6 is for thermoionizing the hydrocarbon (mainly methane) in the electron gun column 11 into carbon and hydrogen. That is, by adding a means for thermally ionizing and decomposing hydrocarbons that cannot be exhausted by a non-evaporable getter pump, the hydrocarbons can be exhausted. Pump unit with ionization function 1
01 is attached to the housing by providing an opening in the housing of the electron gun column 11. A second non-evaporable getter pump is provided on the inner wall surface of the pump unit 101 with an ionization function to adsorb the ionized and decomposed hydrocarbon gas. Thus, exhaust efficiency is further improved by providing the second non-evaporable getter pump in the vicinity of the filament. In order to overheat the second non-evaporable getter pump, the second heater 5 is provided outside the casing of the pump unit 101 with the ionization function. In order to prevent overheating of the electron gun, it is preferable to turn off the first heater for heating the housing of the electron gun column during the emission of the electron gun. Therefore, the second non-evaporable getter pump can be heated even when the electron gun is emitting by providing the second heater provided in the pump unit 101 with the ionization function separately from the first heater. That is, only the vicinity of the hydrocarbon gas generation source can be evacuated.

An opening 7 is provided below the electron gun 1, and the emitted electrons pass through the opening 7 and are guided to the electron optical system provided in the electron optical system column 9. Usually, the degree of vacuum in the electron optical system column is lower than the degree of vacuum in the electron gun column, so the electron optical system column and the electron gun column are differentially pumped across the opening 7. It becomes a structure. For this reason, it is also conceivable that the gas containing hydrocarbon described above enters the electron optical system column from the opening 7. Therefore, it can be said that the thermal ionization function of the hydrocarbon gas according to the present invention is an important function when the non-evaporable getter pump is used.
Depending on the operation of the filament 6, the trajectory of electrons generated from the electron source 1 may be affected. Therefore, if the electron gun column 11 is located downstream of the electron beam emission position of the electron source 6 in the housing of the electron gun column 11, the electron beam emitted from the electron source may be affected by the operation of the filament 6. Therefore, the position where the filament 6 or the pump unit 101 with ionization function is arranged or the position of the opening connecting the electron gun column 11 and the pump unit 101 with ionization function is the electron beam generation position of the electron source 1 (for example, the position of the electron beam). It is preferable to be above the extraction electrode).

Next, a procedure for operating the electron gun of this embodiment will be described.
First, to evacuate the sample chamber, a vacuum pump (not shown) is driven to start rough evacuation from atmospheric pressure. Next, baking is performed by heating the first heater 4 and the second heater 5.
In the initial stage of baking, the temperature is kept at about 200 ° C., and water, hydrocarbons, and other gases inside the housing are mainly baked out. If baking is performed for 6 to 12 hours, in most cases, degassing from the inner wall surface is reduced to a level that does not cause a problem. Next, the non-evaporable getter pumps 2 and 3 are activated by increasing the power applied to the first and second heaters to set the target temperature to 400 ° C. to 500 ° C. If it is maintained for about 10-20 minutes after the temperature rise, it will be fully activated.

The electron gun was assembled and evacuated and baked to achieve a degree of vacuum of 10 ⁻¹⁰ Torr. In addition, the degree of vacuum was 10 under the condition that 2 kV was applied to the electron source to emit electrons.
⁻¹⁰ Torr could be maintained. Since a high vacuum can be maintained, a cold cathode electron source (CFE) or a Schottky electron source may be used in addition to the thermal field emission electron source used in this embodiment. The overall size of the electron gun was also about 15 cm wide and about 15 cm high, which was much smaller than the conventional configuration.
In order to exhaust the electron gun column 11 from the atmosphere to high vacuum, if exhaust from the opening 7 is insufficient, a port for rough exhaust may be provided in the electron gun column 11.

In this embodiment, a case where the electron gun described in Embodiment 1 is applied to a scanning electron microscope will be described.
FIG. 3 shows a schematic configuration of the scanning electron microscope according to the present embodiment. From the viewpoint of being advantageous for miniaturization, the electron optical system used in the present embodiment is a small electron optical system that is composed of an electrostatic lens. In FIG. 3, an electron beam 18 emitted from a field emission electron gun 17 is provided with a third lens electrode 19, a second lens electrode 20, and a first lens electrode 21 provided therebelow.
Are subjected to a focusing action by an electric field formed between the respective electrodes of the electrostatic lens, and are focused finely and irradiated onto the sample 25. At the same time, the electron beam 18 is deflected in the internal space of the second lens electrode 20 by the deflector 24 and is scanned two-dimensionally on the sample 25. For alignment of the optical axis between the electron beam 18 and the electrostatic lens, the alignment coil 2 is used.
3 can shift the optical axis of the electron beam 18. A stigma coil 22 is provided to correct astigmatism of the electron beam 18. Secondary electrons 33 generated from the sample 25 by the irradiation of the electron beam 18 reach the secondary electron detector 26 and are detected. By inputting this detection signal to the image forming means 27, a two-dimensional secondary electron image of the surface of the sample 25 is obtained. The present embodiment is intended for observation at a low accelerating voltage that can reduce charging and damage of the sample surface due to electron beam irradiation so as to be suitable for applications such as semiconductor surface observation. The acceleration voltage Va is set to 3 kV or less (mainly around 1 kV).

In the embodiment shown in FIG. 3, since the electron optical system is constituted only by the electrostatic lens, the electron optical lens barrel is very small with an outer diameter of 34 mm and a height of 150 mm. In this embodiment, high resolution (6 nm at an acceleration voltage of 1 kV) is realized. The electron optical system is inserted into a vacuum container different from the electron gun 17 with the aperture plate 7 interposed therebetween. This vacuum vessel is kept in a vacuum by a turbo molecular pump 28. The aperture plate 7 is provided with an aperture for leading the electron beam out of the electron gun.
As described above, a combination of an electron optical system composed of a small electron gun and an electrostatic lens according to the present invention has realized an unprecedented small-sized high-resolution scanning electron microscope.

In this embodiment, a case where the electron gun described in Embodiment 1 is applied to an electron beam drawing apparatus will be described.
If the small scanning electron microscope described in Embodiment 2 has a pattern drawing function, it can be used as an electron beam drawing apparatus. FIG. 4 shows an outline of this embodiment. The data of the pattern recording control means 30 in which data such as the layout of the pattern to be drawn in advance is stored one by one, and the electron beam 18 is deflected by the deflector 24 so as to form the pattern. A pattern with a resolution of 6 nm can be drawn on the resist film. In addition, the secondary electrons 33 generated from the region near the alignment mark (not shown) can be detected by the secondary electron detector 26 to detect the position of the pattern to be drawn.

In this embodiment, since the acceleration voltage is used at a low acceleration of about 1 kV, a thick film resist (1
(μm or larger) cannot be drawn. Therefore, it is suitable for the process of forming a pattern on the surface of a thin film resist (0.3 μm or less) as an application. As features, the influence of the proximity effect can be reduced, so that the labor of correction can be reduced, the apparatus size can be greatly reduced, and high-resolution drawing can be obtained relatively easily.

In the present embodiment, a configuration of an electron gun provided with a positioning mechanism for aligning the optical axis of an electron source and an automatic switching mechanism between rough exhaust and main exhaust when the electron gun column is evacuated will be described. Needless to say, when an electron beam or charged particle beam application apparatus is used, it is necessary to accurately align the optical axis of the electron beam. However, when downsizing an electron gun or an apparatus on which the electron gun is mounted, it is difficult to mount complicated positioning means and optical axis alignment means on the apparatus due to restrictions on downsizing.
On the other hand, regarding the evacuation of the apparatus, it is preferable that the number of evacuation apparatuses used in the entire charged particle beam apparatus is as small as possible from the viewpoint of downsizing of the apparatus. Therefore, it can be said that it is preferable to use a common vacuum evacuation means in an electron optical system disposed below the electron gun, a measurement optical system in which various detection devices are disposed, and the like. Thus, in this embodiment, a positioning mechanism for a small electron source capable of accurately aligning the optical axis of the electron gun with a simple configuration, and a rough exhaust means are shared between the electron gun column and the electron optical system column. It is an object of the present invention to provide an electron gun equipped with an automatic switching mechanism for rough exhaust and main exhaust that can be converted into a general exhaust.

FIG. 5 shows the configuration of the electron gun of this embodiment. FIG. 5 shows a configuration example in which the electron gun of this embodiment is further mounted on a scanning electron microscope as an application example of the electron gun of this embodiment. A drawer number 17 indicates an electron gun. Descriptions of parts common to the electron gun having the configuration shown in FIG. 1, such as the electron source 1 and the pump unit 101 with an ionization function, are omitted. The electron gun of this embodiment includes a positioning mechanism including a conflat flange 39 and a bellows 40 for fixing the electron source 11 to the electron important column 11, or a knob 39 having an adjustment screw at the tip, and a rough exhaust. The difference from the electron gun of the first embodiment is that a differential exhaust unit 200 including an automatic opening / closing valve 102 is provided. When actually configuring a charged particle beam apparatus, the electron gun 17 is used in combination with the electron optical system column 9. The electron optical system column 9 includes an electron optical system barrel 36 and a sample stage 35 in which components generally necessary for constituting a scanning electron microscope, such as a deflector and an objective lens, are stored. The electron optical system column 9 includes
A vacuum pump 34 is connected. Reference numeral 33 denotes a secondary electron detector, and 27 denotes image forming means for forming a secondary electron image from a signal detected by the secondary electron detector. Although not shown separately in FIG. 5, the vacuum pump 34 includes a rough exhaust vacuum pump and a main exhaust vacuum pump.

First, the configuration and operation of the electron gun positioning mechanism will be described. In order to efficiently pass the electron beam emitted from the electron source 1 through the opening, it is necessary to adjust the position of the electron source 1.
Since the opening provided in the center of the opening plate 7 has a diameter of about 0.5 mm, the moving stroke 1
It is necessary to realize about mm in a plane perpendicular to the optical axis. The electron source 1 is fixed to a conflat flange 39 having a diameter of 70 mm, and various electric wires are coupled via a tip (not shown) of the electron source 1 and an electrode (not shown) via an electrode 12 provided in a feedthrough. The Here, the feedthrough is an introduction portion provided in the vacuum container in order to draw various electric wires into the vacuum container. These structures are coupled to the electron gun column 10 via the bellows 40.
The electron source 1 is configured to be movable by the deformation amount of the bellows 40 with respect to the electron gun column 10. The relative positions of the two are adjusted so that the electron beam transmitted to the electron optical system column 9 is maximized while turning the electron source positioning knob 38. The electron source positioning knob is shown only in one place in FIG. 1, but in actuality, it is a set of two facing each other.
One set is provided at a total of four locations in a direction perpendicular to each other. Once the position of the electron source 1 is determined,
Position locking can be prevented by closing and locking the knobs facing each other.

Next, the configuration, configuration, and operation of the differential exhaust unit 200 will be described. This electron gun column 10
In order to exhaust the air from the atmosphere to a high vacuum, exhaust from the opening 7 is not sufficient. Conventionally, a rough exhaust port is provided in the electron gun column 10 for this purpose, which leads to an increase in the outer size. On the other hand, in the electron gun of Example 1, since the opening provided in the aperture plate 7 serves as a rough exhaust port, the electron gun 17 and the electron optical system column 9 provide a rough exhaust vacuum exhaust means. The electron gun according to the first embodiment has a problem that the diameter of the hole formed in the aperture plate 7 is small and the conductance during rough exhaust is small. However, the size of the opening provided in the opening plate 7 cannot be increased too much. Since the degree of vacuum in the electron optical system column 9 is lower than the degree of vacuum in the electron gun column 11, if the hole diameter of the aperture plate 7 is made too large, the residual gas in the electron optical system column 9 becomes electrons. This is because it may flow back into the gun column 11 and it may be difficult to maintain a sufficient degree of vacuum. Therefore,
In the electron gun of this example, the opening plate 7 is provided with a rough exhaust opening different from the opening for electron beam passage,
Further, an automatic opening / closing valve 102 is added to the rough exhaust opening.

The configuration and operation of the rough exhaust automatic opening / closing valve 102 will be described in detail with reference to FIG.
6A is a plan view of the aperture plate 7 as viewed from above, and FIG. 6B is a cross-sectional view taken along the alternate long and short dash line in FIG. 6A at the position AA ′. Each figure is shown. In addition, the differential exhaust part 200 of FIG.
Then, only one automatic opening / closing valve 102 is shown for one opening plate 7, but actually, two valves are added to one opening plate 7. The hatching on the left side of FIG. 6B shows the inner wall surface of the differential exhaust unit 200 (or the electron gun column 11). 46 is a fixing base for fixing the opening plate 7 and the movable arm 45 to the inner wall surface. At the center of the aperture plate 7, there is a first aperture 42 through which the electron beam passes. A second opening 43 is provided separately from the first opening 42. If the hole diameter is sufficiently larger than the opening 42, the conductance during roughing is increased, which is effective. A lid 44 corresponds to the opening 43. The lid 44 is coupled to the inner wall surface by an autonomously movable arm 45 and moves up and down with respect to the inner wall surface. In this embodiment, a bimetal that is deformed by heating is used as the material of the arm 45. In the present embodiment, the autonomously movable arm 45 is configured by using a bimetal that is deformed by heating, but a similar effect can be obtained by using a shape memory alloy. In addition, the bimetal material is usually F.
Although a magnetic material such as an eNi—NiFeCr alloy is used, when a magnetic material is used as the material of the movable arm, the trajectory of the electron beam passing through the first opening 42 is bent. Therefore, it is preferable to use a bimetal using a nonmagnetic material as the material of the movable arm. Considering the operating temperature of the non-evaporable getter, the bimetal preferably has high-temperature resistance, and among them, it was confirmed by experiments that a bimetal combining a stainless alloy and a low thermal expansion metal such as tungsten is suitable.

In order to maintain the airtightness of the electron gun column 11, the lid 44 needs to be in close contact with the aperture plate 7 during main exhaust. Considering the adhesion of the lid 44, the lid 44 is preferably plastically deformed at the time of adhesion. Therefore, the elastic modulus of the material constituting the lid 44 should be smaller than the elastic modulus of the material constituting the aperture plate 7. good. In addition, the opening plate 7 may be contaminated because the electron beam passes through the opening 42 in the center, and the movable arm 45 and the lid 44 repeat the close contact / opening operation with the opening plate 7. It may deteriorate over time. Therefore, the aperture plate 7, the movable arm 45, and the lid 44 need to be easily exchangeable. Therefore, in this embodiment, the aperture plate 7
The movable arm 45 was fixed to the inner wall surface with a fixing screw 201. Further, the lid 44 and the movable arm 45 were fixed by a fixing screw 202. Thus, by providing the fixing means to the inner wall surface of the aperture plate 7, the lid 44, and the movable arm 45 separately, an electron gun in which the aperture plate 7, the movable arm 45, and the lid 44 can be easily replaced is provided. Can do. In FIG. 6 (b), the movable arm 45 and the aperture plate 7 have the same fixing means, so the movable arm and the aperture plate cannot be replaced independently. Are separately fixed to the inner wall surface, an electron gun that can replace the aperture plate 7 and the movable arm 45 independently can be realized.
An electron gun that is easier to maintain can be provided. Moreover, in order to maintain the confidentiality between the upstream and downstream of the aperture plate 7, the aperture plate 7 may be welded to the inner wall surface. Needless to say, the opening 42 needs to be a separate part so that it can be replaced.

Next, the procedure for evacuating the electron gun of this embodiment and the charged particle beam application apparatus equipped with the electron gun will be described. First, when the elements constituting the apparatus are assembled, rough exhaust is performed. At this time, to activate the non-evaporable getter pumps 3 and 41, the heaters 4 and 5 are energized to heat the casing. By using the heating at this time, the open / close valve is opened to increase conductance, and the efficiency of rough exhaust can be greatly improved. When activation of the non-evaporable getter pump and rough exhaust are complete, turn off the power to the heater and cool the enclosure to room temperature. At about room temperature, the lid 44 closes the opening 43, so the conductance with the electron gun column 10 is
It is determined by the opening 42, and good differential pumping is automatically realized. In this example, the differential evacuation characteristics that are four orders of magnitude higher than the vacuum degree of the electron optical system column 9 of 10 ⁻⁴ Pa and the vacuum degree of the electron gun column 10 of 10 ⁻⁸ Pa could be obtained. .

As described above, by realizing the configuration described in the present embodiment, the overall dimensions of the entire electron gun can be significantly reduced as compared with the conventional configuration, such as a width of about 15 cm and a height of about 15 cm. The electron gun was assembled and evacuated and baked to achieve a degree of vacuum of 10 ⁻¹⁰ Torr. Also,
The vacuum degree of 10 ⁻¹⁰ Torr could be maintained under the condition that electrons were emitted by applying 2 kV to the electron source. Since a high vacuum can be maintained, a cold cathode electron source (CFE) or a Schottky electron source may be used in addition to the thermal field emission electron source used in this embodiment.

The scanning electron microscope of FIG. 5 configured using the electron gun having the structure of this embodiment, or the scanning electron microscope in which the electron gun of this embodiment is applied to the scanning electron microscope of FIG. 3 has a vacuum tightness around the electron source. For this reason, it was possible to realize a scanning electron microscope that is smaller than the scanning electron microscope described in Example 2 and has a longer maintenance period of the electron source. Further, it is obvious that even if the electron gun of this embodiment is applied to the electron beam drawing apparatus shown in FIG. 4, a compact electron beam drawing apparatus having better operability than the conventional one can be realized.

In this embodiment, an electron gun provided with a positioning mechanism that is easier to position than the electron gun shown in the fourth embodiment will be described.
FIG. 7A shows a principle diagram of the positioning mechanism of the present embodiment. FIG. 7B shows a configuration diagram when the positioning mechanism of this embodiment is applied to the electron gun of FIG. 5 together with the main part of the electron gun. First, the principle of this embodiment will be described with reference to FIG. The positioning mechanism of the present embodiment is characterized in that alignment reference planes in the x-axis direction and the y-axis direction are provided separately. As described in Example 4, the positioning is performed so that the electron beam transmitted through the electron optical system column 9 is maximized. However, since a small charged particle beam application apparatus cannot have a highly accurate movement positioning mechanism, the adjustment operation is performed by the apparatus user. In the electron gun of Embodiment 4, all the electron beam source positioning knobs 38 are arranged at the same height. That is, the positioning in the x direction and the positioning in the y direction must be performed at the same position. On the other hand, the electron gun of this embodiment is provided with the x-direction axis alignment means 48 and the y-direction axis alignment means 49 independently.
Therefore, when the electron beam source is positioned, the device user can first perform positioning in the x direction or y direction, and then perform positioning in the y direction or x direction, and the device user can adjust the axis of the electron beam source. The burden is reduced.

FIG. 7B shows a main part of an electron gun provided with the positioning mechanism of the present embodiment. The electron source 1 includes an electron gun column 1 by a parallel leaf spring 47 for holding the electron source in a predetermined position in the vacuum vessel.
1 is suspended inside. Various electric wires 50 are held inside the parallel leaf spring. The upper part of the parallel leaf spring 47 is fixed to a flange having a feedthrough, and the electron source 1 is mounted on the lower end portion of the parallel leaf spring 47. The various electric wires 50 are led to the upper feedthrough after being insulated by insulators or the like. The outer periphery of the parallel leaf spring 47 is surrounded so as to cover the non-evaporable getter pump 2. Stress from the x direction and stress from the y direction are applied to the parallel leaf spring 47 due to the operation of the positioning mechanisms 48 and 49. That is, torsional stress is applied to the parallel leaf spring 47. Therefore, the positioning mechanisms 48 and 49 need to have rigidity against torsion. For this reason, in this embodiment, the positioning mechanisms 48 and 49 are formed using two opposing sets of linear introduction terminals with locks.
49 was constructed. The diagram of the positioning mechanism shown in FIG. 7A shows a bellows used for introducing linear motion from the outside of the electron gun housing. The parallel leaf spring 47 is x or
It is elastically deformed by being twisted in the y direction, but has sufficient rigidity and elastic modulus in a direction perpendicular to the y direction, and is designed not to buckle or plastically deform. Furthermore, it goes without saying that the fixing plates 51 and 52 that support the parallel leaf spring 47 have sufficiently high rigidity and elastic modulus with respect to the force applied for positioning. As long as the member does not cause buckling or plastic deformation, the electron source holding means may be formed of a structural material other than the parallel leaf spring.

The parallel leaf spring 47 includes leaf spring fixing plates 51 and 52 that form axial reference planes in the x and y directions. Each plate corresponds to a pair of opposing positioning mechanisms and is coupled to an operation knob 38 outside the housing of the electron gun column 11 via a straight lead-in terminal. Thereby, it has a structure that can be operated from the atmosphere side. In order to perform positioning in the x direction, the driving mechanism in the x direction may be operated. This mechanism is desirable because once the position in the x direction is determined, it is possible to reduce temporal drift by locking the opposing drive mechanism. Positioning in the y direction may be basically performed in the same manner as in the x direction.
By adopting such a structure, the electron source 1 can perform raster scanning that does not interfere in the x and y directions, so that it is possible to comprehensively and efficiently move a movable area of 1 mm × 1 mm. For this reason, there is a feature that positioning for efficiently emitting an electron beam from the opening 42 is easy. Furthermore, it is desirable to have both the features that can be easily realized in size reduction.

The electron gun of the present embodiment can be applied to the scanning electron microscope shown in FIG. 3 or FIG. 5, and in that case, an electron microscope that can be positioned more easily than the scanning electron microscope of the fifth embodiment. Can be realized. If the deflector of the electron optical system is configured using an electrostatic lens as in the scanning electron microscope shown in FIG. 3, it is possible to realize a scanning electron microscope that is smaller than the conventional one. If the positioning mechanism of the present embodiment is an electron gun of a type in which the electron source is positioned manually, the positioning can be easily performed even if it is applied to an electron gun having a structure other than that of the first embodiment. Is obtained.

In the present embodiment, another configuration example of the automatic opening / closing valve shown by 102 in FIG. 5 will be described. FIG. 8A is a plan view of the aperture plate 7 as viewed from above, and is the same as FIG. 6A. FIG.
8 (d) to 8 (d) are cross-sectional views of the opening plate 7 on which various automatic opening / closing valves are mounted, taken along the alternate long and short dash line shown at position AA 'in FIG. 8 (a).

The features of the automatic opening / closing valve shown in FIGS. 8 (b) to 8 (d) will be described below. FIG. 8 (b)
This automatic opening / closing valve is a configuration example in which a conical top is used for the lid 44. There is an effect of preventing misalignment (automatic alignment) between the hole and the valve accompanying opening and closing of the lid 44. The valve displacement is a phenomenon that occurs due to thermal deformation while repeatedly performing valve opening / closing operations accompanied by temperature rise and fall, and mounting errors of components. When such a valve displacement occurs, the adhesion between the opening and the valve is impaired,
Since there is a problem that the degree of vacuum deteriorates due to gas flowing in and out of the gap, it is necessary to fully consider prevention of misalignment.
The automatic opening / closing valve shown in FIG. 8C is a configuration example in which the contact surface with respect to the opening 43 of the lid 44 is a spherical surface. Similar to the valve shown in FIG. 8 (b), it has a self-aligning effect. Further, since a general-purpose ball can be applied to the material of the lid 44, there is an effect that the cost for manufacturing the valve can be reduced.
FIG. 8D shows a valve having a configuration in which a circular protrusion (circular edge) 203 is provided on the contact surface of the lid 44 with the opening plate 7. By providing the circular edge in the lid 44 in this way, the allowable width for the positional deviation between the hole and the valve is increased. The circular edge is not on the lid 44 side,
Even if it is formed on the side of the aperture plate 7, the same effect can be obtained.

As described above, by using the automatic opening / closing valve having the configuration described with reference to FIGS. 8B to 8D, the adhesion between the opening plate 7 and the lid 44 is improved. Vacuum tightness is improved. Needless to say, if the lid 44 is made of a material having an elastic modulus smaller than that of the aperture plate 7, the adhesion is further improved. Moreover, it goes without saying that it is convenient in terms of maintenance if the cover 44 and the movable arm 45 are configured to be exchangeable using a fixing screw as shown in FIG. 6B.

FIG. 6 illustrates an electron gun of the present invention. The figure explaining the structure of the conventional electron gun. FIG. 6 illustrates a scanning electron microscope using the present invention. 1A and 1B illustrate an electron beam drawing apparatus using the present invention. The figure explaining another structural example of the electron gun of this invention. (a) Top view of an opening plate using the automatic opening / closing valve of the present invention, (b) A sectional view for explaining the structure of the automatic opening / closing valve of the present invention. (a) Principle diagram for explaining an electron source positioning mechanism of the present invention, (b) An explanatory diagram of a structure in which the electron source positioning mechanism of the present invention is applied to an electron gun. (a) Another configuration example of the automatic opening / closing valve, (b) Another configuration example of the automatic opening / closing valve, (c) Another configuration example of the automatic opening / closing valve, (d) Another configuration example of the automatic opening / closing valve.

Explanation of symbols

1: electron source, 2: non-evaporable getter pump, 3: non-evaporable getter pump, 4: heater, 5:
Heater, 6: Filament, 7: Opening plate, 8: Thermocouple, 9: Column for electron optical system, 10:
Column for electron gun, 11: connector, 12: introduction terminal, 13: ion pump, 14: ion pump, 15: magnetic shield 16: electron gun, 17: electron gun, 18: electron beam, 19: third electron lens, 20: second electron lens, 21: first electron lens, 22: stigma coil 23: alignment coil, 24: deflector, 25: sample, 26: secondary electron detector, 27
: Image forming means, 28: turbo molecular pump, 29: sample stage, 30: pattern recording control means, 31: sample, 32: turbo molecular pump, 33: secondary electron, 34: vacuum pump,
35: Sample stage, 36: Electro-optical system barrel, 37: Sample, 38: Electron source positioning knob, 3
9: Electron source fixing flange, 40: bellows, 42: opening, 43: rough exhaust opening, 44:
Valve: 45: Material deformed by heating, 46: Fixing base, 47: Parallel leaf spring mechanism, 48:
Parallel leaf spring positioning mechanism, 49: parallel leaf spring positioning mechanism, 50: electric wire, 51: leaf spring fixing plate, 52: leaf spring fixing plate, 101: pump with ionization function, 102: automatic open / close valve for rough exhaust, 200: Differential exhaust part, 201: fixing screw, 202: fixing screw.

Claims (5)

An electron beam application apparatus comprising an electron gun, an electron beam scanning deflection means and a detector,
The electron gun is
An electron source,
A vacuum vessel holding the electron source;
An opening plate for partitioning the inside of the vacuum vessel into a first vacuum chamber and a second vacuum chamber;
Exhaust means for evacuating the inside of the vacuum vessel;
The aperture plate has a first aperture for deriving an electron beam generated by the electron source to the second vacuum chamber;
The opening plate includes a second opening having a larger area than the first opening, and a movable valve that opens and closes the second opening according to rough exhaust and main exhaust of the vacuum vessel ,
Said movable valve and a lid for opening and closing the second opening, and a movable arm for opening and closing operation of the lid, movable arms electron beam apparatus, characterized in that formed in the non-magnetic bimetallic alloy . In the electron beam application apparatus of Claim 1,
As the exhaust means for evacuating the inside of the vacuum container,
A non-evaporable getter pump provided inside the vacuum vessel;
Heating means of the getter pump;
An electron beam application apparatus, comprising: means for decomposing gas generated during operation of the electron source. In the electron beam application apparatus of Claim 1,
As the exhaust means for evacuating the inside of the vacuum container,
A non-evaporable getter pump provided inside the vacuum vessel;
Heating means of the getter pump;
A heating element disposed in the vacuum vessel,
An electron beam application apparatus, wherein the heating element is disposed above the electron source. In the electron beam application apparatus of any one of Claim 1 to 3,
An electron beam application apparatus using a bimetal made of a stainless alloy and tungsten as the nonmagnetic bimetal alloy . In the electron beam application apparatus of any one of Claim 1 to 3 ,
2. The electron beam application apparatus according to claim 1, wherein the movable arm is formed of a nonmagnetic shape memory alloy instead of a nonmagnetic bimetal alloy .

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