JP4538871B2 - Method and apparatus for manufacturing ultrathin piezoelectric resonator element plate - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method and an apparatus for manufacturing an ultrathin piezoelectric resonator element plate having a structure in which a thick annular surrounding portion is integrated on the entire periphery of an ultrathin vibrating portion. The present invention relates to a manufacturing method and a manufacturing apparatus for finely adjusting the thickness of an ultrathin vibrating portion formed on the bottom surface of each recessed portion to a specified thickness after the formation.
[0002]
[Prior art]
Recently, there has been a strong demand for ultra-miniaturization, ultra-thinness, and higher frequencies for various communication devices and electronic devices. However, for piezoelectric devices such as piezoelectric vibrators and filters used in these devices, However, miniaturization is required, and improvement of temperature characteristics and removal of attached circuits including circuit elements that are difficult to be integrated such as an overtone oscillation circuit are strongly demanded.
In view of such a trend, the inventors of the present application have used an AT-cut quartz plate, for example, and an ultrathin piezoelectric resonator having a structure in which a thick annular surrounding portion is integrated on the entire periphery of a vibrating portion having a thickness of about 15 μm. A manufacturing method of base plate was proposed. This ultrathin piezoelectric resonator element has the advantage that resonance exceeding 100 Mppm can be obtained at the fundamental frequency while maintaining the mechanical shape of the ultrathin vibrating portion.
When forming multiple ultra-thin piezoelectric resonator elements on a large-area piezoelectric wafer, apply a uniform photo-resist on the upper surface of the piezoelectric wafer, and then match the opening area of the recess to be formed. The photoresist is exposed using a mask having a plurality of openings, and the exposed portion is removed with a developer after the exposure. Subsequently, using the remaining photoresist as a mask, the concave portion is formed by etching the surface of the piezoelectric wafer not covered with the remaining photoresist with an etching solution at a predetermined etching rate. After the recess is formed, the residual photoresist is removed with a resist stripping solution to manufacture a resonator element plate as a semi-finished product.
Since there is variation in the thickness of the ultra-thin vibration part at the bottom of each concave part formed on the piezoelectric wafer in this way, fine adjustment to make the thickness of the ultra-thin vibration part in each concave part a specified value Further processing work is required.
Prior to the work of finely adjusting the thickness of the ultrathin vibrating portion, a step of measuring the thickness of the ultrathin vibrating portion in each concave portion is performed by a technique as shown in FIG. That is, the piezoelectric wafer 1 having a plurality of recessed portions 2 on the upper surface is placed and grounded so that the outer surface of the ultrathin vibrating portion 3 on the bottom surface of the recessed portion 2 is in contact with the upper surface of the metal plate 5 serving as an electrode. One lead terminal 6a extending from the frequency measuring device 6 is connected to the metal plate 5, and the other terminal 6b (probe) is brought into contact with an appropriate position of the ultrathin vibrating portion 3 from the recessed portion side. The ultrathin vibrating part 3 is forcibly excited by energizing each terminal, and the resonance frequency is measured. The resonance frequency is converted into the thickness of the vibrating part to determine the thickness adjustment amount. Specifically, it calculates how much the resonance frequency measured for each ultra-thin vibration part is deviated from a target frequency, for example, 30 MHz, 100 MHz, etc., and this deviation amount is the deviation amount of the vibration part thickness. Convert to. In addition, since fine adjustment is performed by reducing the thickness of the ultrathin vibration part in the fine adjustment process described later, the thickness of all the ultrathin vibration parts 3 is less than the specified value in the recess forming process by the etching. Take care to make it thicker.
[0003]
FIG. 4B is a plan view of the piezoelectric wafer 1 for which the frequency measurement of each ultrathin vibrating portion 3 has been completed. In this example, a total of 49 concave portions 2 are formed on each piezoelectric wafer, 7 vertically and 7 horizontally. It is assumed that The numbers +5, +6,..., +10,..., +14, +15 shown in the figure have the resonance frequency of the ultrathin vibration part 3 in each recess 2 with respect to the target resonance frequency. The amount of deviation (ppm) in the positive direction is shown. When the recessed portion is formed by the conventional etching method, the etching accuracy is low, and therefore, for example, the thickness of the ultra-thin vibrating portion 3 having a resonance frequency of +10 ppm is the largest, and the difference is largely from +5 ppm to +15 ppm. The thick ultra-thin vibrating part is distributed. Specifically, for example, there are 7 ultra-thin vibration parts having a deviation of 10 ppm, and 6 ultra-thin vibration parts having a deviation of 9 ppm and 11 ppm, respectively, and an ultra-thin vibration having a deviation of 8 ppm and 12 ppm. Each of the vibration parts has 5 deviations, each of the ultra-thin vibration parts having deviations of 7 ppm and 13 ppm, each of which has 4 deviations, and each of the ultra-thin vibration parts having deviations of 6 ppm and 14 ppm, has deviations of 6 ppm and 14 ppm It is assumed that there are two ultrathin vibrating parts each, and one ultrathin vibrating part having a deviation of 5 ppm and 15 ppm.
In order to make fine adjustments to reduce the number of ultra-thin vibrating parts with varying wall thickness over a wide range to a specified thickness that can output a specified resonance frequency, each ultra-thin vibrating part is required. It is necessary to perform an operation of immersing the substrate in the etching solution for a certain period of time and ending the etching by collectively cleaning the etching solution with pure water after the required time has elapsed. For example, when the etching rate is set so that the thickness corresponding to 1 ppm can be reduced by dropping the etching solution onto the ultrathin vibrating portion and immersing it for 1 second, the etching takes the longest time first. A predetermined amount of etching solution is dropped from a dispenser (not shown) to the ultrathin vibrating portion, that is, the ultrathin vibrating portion (group) whose resonance frequency is measured to be +15 ppm, and after 1 second from the start of dropping, the deviation amount is +14 ppm. A predetermined amount of etching solution is dropped on the thin vibrating portion (group), and the etching solution is dropped sequentially at a time interval of 1 second from the start of dropping to each vibrating portion group. Finally, when the etching solution is dropped onto the +5 ppm ultrathin vibrating portion (group) and the required time (15 seconds after starting dropping on the ultrathin vibrating portion at +15 seconds) has elapsed, all the recesses are filled. The wafer is collectively cleaned with pure water or the like so that the etching solution is removed.
[0004]
If the time required for the dispenser to drop onto one ultra-thin vibrating part is 0.1 seconds including the individual movement time when performing the dropping operation with one dispenser, all 49 The total required time when dropping operation on the ultrathin vibrating part is continuously performed without delay is 4.9 seconds, and the number of ultrathin vibrating parts belonging to each variation range of +5 to +15 ppm is at most seven (+10 ppm). )), And at least one (in each case of +5 ppm and 15 ppm). Therefore, for example, if the collective cleaning is performed 15 seconds after the start of the continuous etching droplet dropping for the seven ultra-thin vibrating portions having a resonance frequency variation of +10 ppm, the etching time for the seventh ultra-thin vibrating portion is from 15 seconds. Is also 0.6 seconds shorter. If the resonance frequency of the ultra-thin vibration part obtained by the etching time shorter by 0.6 seconds causes any difficulty in relation to the target resonance frequency, the resonator having the ultra-thin vibration part Although the base plate is a defective product, it can be used sufficiently if it is determined to be within the allowable range.
That is, as the number of ultrathin vibrating parts belonging to the resonance frequency within the range of 1 Mz is larger, the number of supervibrating parts that are insufficiently etched during batch cleaning increases. When the width is large, the number of ultra-thin vibrating portions belonging to each 1 Mz deviation range is relatively small, so that the insufficient etching time is often within the allowable range.
The piezoelectric wafer 1 is a square plate having a side of about 1 inch, and each recess has an opening size of about 3 mm square. In this way, a dispenser device for individually dropping etching liquid into a small-sized recess portion arranged in close proximity on a piezoelectric wafer of a small area (for example, a total of 49 pieces in a vertical and horizontal direction of 7 pieces) is etched from a nozzle at the tip. Although the liquid is dropped, it is difficult to use a plurality of dispensers because it is necessary to drop the etching liquid in an irregular order in each recessed portion arranged in close proximity in a narrow space on the piezoelectric wafer. The dropping operation is performed by one dispenser. In terms of cost, it is disadvantageous to use a plurality of dispensers. Even if a plurality of dispensers are used to drop the etching solution, the ultrathin vibrating parts having the same thickness are not arranged adjacently in a certain order. The dropping order is an irregular order that is not related to the arrangement permutation, and it is difficult to perform a complicated order of dropping work at a low cost using a plurality of dispensers, no matter how the control program of the dispenser device is improved. . For this reason, the operation | work using one dispenser is performed.
In addition, as long as the variation in the thickness of the ultrathin vibrating portion is distributed over a wide range of +5 to +15 ppm as described above, the number of ultrathin vibrating portions belonging to each individual +1 Mz range is reduced. Even if the etching operation is sequentially performed from the ultrathin vibration part having the largest variation to the smallest ultrathin vibration part and the cleaning operation is performed 15 seconds later, the etching time for each ultrathin vibration part is not reduced. The shortage is not a serious problem.
[0005]
[Problems to be solved by the invention]
However, as the quality of the etching solution and the quality of the etching-related technology improve year by year, the range in which the thickness of the ultrathin vibration part in each concave part formed in the concave part forming step varies. That is, for example, the thickness variation of the ultrathin vibrating portion in each recess formed on one piezoelectric wafer is only a frequency variation in a narrow range of about +10 ppm ± 1 ppm as the resonance frequency, for example. There appears a situation in which a large number of ultrathin vibrating parts belong within a narrow range of resonance frequency shift of 1 ppm. Therefore, in the conventional method of starting the dropping of the etching solution from the ultra-thin vibration portion that requires a long etching time for fine frequency adjustment and finally performing batch cleaning, the ultra-thin vibration portion having insufficient etching time is removed. There is a problem that a large number of piezoelectric resonator element plates are manufactured.
That is, in the above example, all ultrathin vibration parts (49 pieces) are included in the range of 3 ppm such as +9 ppm (10 pieces), +10 ppm (29 pieces), and +11 ppm (10 pieces). For this reason, when performing continuous etching and collective cleaning operations, the dropping operation is started one by one from the ultrathin vibrating portion having a deviation amount of +11 ppm, and the dropping operation for the tenth in the ultrathin vibrating portion having a deviation amount of +9 ppm is performed. As a result, the entire dropping operation is completed, and the cleaning is collectively performed 11 seconds after the dropping starts with respect to the ultrathin vibrating portion having a deviation amount of +11 ppm. However, in this case, the cleaning is performed on the 29th ultrathin vibration part having a deviation amount of +10 ppm, 7.2 seconds after the etching solution is dropped on the 29th vibration part. As a result, a short etching time of 10 seconds is required. Moreover, the cleaning start for the ultrathin vibration part with the deviation amount of +9 ppm is started 3.8 seconds after the start of the dropping with respect to the ultrathin vibration part with the deviation amount of +11 ppm, and the ultrathin vibration part with the deviation amount of +9 ppm is started. The etching time for the last vibrating portion (the tenth) is 2.8 seconds shorter than the 9 seconds originally required for the vibrating portion.
Therefore, many of the resonator element plates having an ultrathin vibration part belonging to the range of 3 ppm such as +9 ppm, +10 ppm, and +11 ppm may become defective due to insufficient etching of the vibration part.
The present invention has been made in view of the above, and in order to manufacture a plurality of ultra-thin piezoelectric resonators using a large-area piezoelectric wafer, a plurality of recesses are formed on the surface of the piezoelectric wafer by etching. In the fine adjustment work of the vibration part thickness, the progress of the etching performed following the individual dropping operation of the etching solution for finely adjusting the thickness of the ultrathin vibration part on the bottom surface of each concave part to the specified thickness is stopped. It is an object of the present invention to provide a manufacturing method and a manufacturing apparatus of an ultrathin piezoelectric resonator element plate that can improve the fine adjustment accuracy and prevent the product quality from being lowered by performing the work individually and efficiently.
[0006]
[Means for Solving the Problems]
In order to solve the above-mentioned problem, the invention of claim 1 is directed to an ultra-thin piezoelectric resonator element plate comprising an ultra-thin vibrating portion and a thick annular surrounding portion integrated on the entire periphery of the ultra-thin vibrating portion. A method of collectively manufacturing a plurality of piezoelectric wafers using an area piezoelectric wafer, wherein a plurality of concave portions are formed in a predetermined arrangement by etching on the surface of the piezoelectric wafer to form the ultrathin vibrating portion on the bottom surface of each concave portion. A concave portion forming step, a thickness measuring step for measuring a variation in thickness of each ultrathin vibrating portion formed on the piezoelectric wafer, and an individual ultrathin vibrating portion detected in the thickness measuring step. In order to correct the variation in thickness and reduce the thickness to the specified thickness, an etching solution is dropped into each recessed portion, and a neutralizing solution that neutralizes the etching solution after a predetermined time has elapsed after the etching solution is dropped. And a fine-thickness adjustment process dripping into the It is characterized in.
According to a second aspect of the present invention, there is provided an apparatus for manufacturing a plurality of ultrathin piezoelectric resonator elements using a large area piezoelectric wafer having a plurality of recesses provided with an ultrathin vibrating portion on the bottom surface in a predetermined arrangement on the surface. An etching solution dispenser that individually drops an etching solution for fine adjustment of the thickness in each recess, and when the etching time by the etching solution reaches a predetermined time, the progress of etching is stopped in the recess. A neutralizing liquid dispenser for dropping the neutralizing liquid, and a control unit for individually controlling the operation of both dispensers, the control unit for a plurality of ultra-thin vibrating parts having the same thickness variation While controlling the dispenser for the etching solution so that the etching solution is successively dropped, the neutralizing solution is continuously dropped when the etching time for the plurality of ultra-thin vibrating parts reaches a predetermined time. And controlling a dispenser for neutralizing solution.
[0007]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, the present invention will be described in detail with reference to embodiments shown in the drawings.
FIGS. 1A and 1B are a perspective view showing a piezoelectric wafer and a partition plate in which concave portions are formed, and a cross-sectional view showing an etching process for finely adjusting the thickness of the vibrating portion. FIG. 2 is a cross-sectional view showing a neutralization droplet dropping step for stopping the progress of etching for fine adjustment.
The piezoelectric wafer 1 has a plurality of recessed portions 2 on its upper surface, and an ultrathin vibrating portion 3 is located on the bottom surface of each recessed portion 2. Since the recessed portion 2 is formed by the first etching process (or the mechanical recessed portion forming process) for forming the recessed portion as described above, the thickness of the ultrathin vibrating portion 3 is not uniform, It varies in a direction thicker than the specified thickness. This variation in thickness is within the range of +10 ppm ± 1 ppm (+9 to +11 ppm), for example, as the resonance frequency. The amount will be applicable.
Prior to the etching, the partition plate 10 for preventing the etching solution from flowing into the adjacent recesses is bonded and fixed on the piezoelectric wafer 1 using the adhesive 12. The partition plate 10 has a through hole 11 and a partition wall 11a that are shaped to match the recess 2 on the piezoelectric wafer, and each recess 2 is formed from an adjacent recess in the state shown in FIG. 1 (b). Separated.
In this state, for the ultrathin vibrating portion 3 (group) that requires the same etching time, a required amount of the etching solution 16 enters the recessed portion 2 from the nozzle of one dispenser 15 through the through hole 11 as shown in the figure. Are sequentially dropped (etching step for fine adjustment of the wall thickness), and simultaneously with the arrival of a predetermined etching time, as shown in FIG. To stop the progress of etching (neutralization droplet lowering step). As the neutralizing solution 21, for example, sodium hydroxide (NaOH), potassium hydroxide (KOH), or barium hydroxide (Ba (OH) ₂₎ or the like can be used.
Note that the etching process for fine wall thickness adjustment and the neutralization droplet lowering process constitute one wall thickness fine adjustment process.
[0008]
In the present invention, the thickness adjustment amount is obtained by converting the result obtained by measuring the resonance frequency of each thin super-vibration portion 3 on the piezoelectric wafer 1 with a measuring device as shown in FIG. Determine the thickness of the ultra-thin vibrating part group having the same thickness adjustment amount, for example, the ultra-thin vibrating part group having a deviation of +11 ppm in resonance frequency (for example, 10 pieces) successively and successively. After the adjustment etching solution 16 is dropped, a solution (neutralizing solution) 21 for neutralizing the etching solution is dropped sequentially when a predetermined etching time (for example, 11 seconds) elapses to stop the progress of etching. Subsequently, after the etching solution 16 for fine adjustment of the wall thickness is continuously dropped on the ultrathin vibrating part group (for example, 29 pieces) having a deviation of +10 ppm with respect to the target resonance frequency, When a predetermined etching time (for example, 10 seconds) for the vibrating portion has elapsed, a solution 21 for neutralizing the etching solution is dropped from the other dispenser 20 to stop the progress of etching. By performing this operation on all the remaining ultra-thin vibrating parts 3 (10 ultra-thin vibrating parts having a deviation of +9 ppm), the thickness deviation of all ultra-thin vibrating parts is eliminated without difficulty. Thus, it is possible to accurately perform the work of reducing the thickness to the specified thickness.
[0009]
By controlling the dispenser 20 for dropping the neutralizing solution 21 and the dispenser 15 for dropping the etching solution 16 to operate separately, continuous and efficient workability is ensured. That is, regardless of the operation of the dispenser for etching droplets that starts the operation in advance, the etching time required for each ultra-thin vibrating portion is obtained by operating the dispenser for neutralizing droplets. Since the neutralizing solution 21 can be dropped individually at the timing of just arrival, there is no shortage of etching, and the etching can be stopped at a specified thickness.
In order to improve workability and shorten the processing time, as described above, starting the dripping of the etchant from the ultrathin vibrating part group with the longest etching time for fine adjustment, and neutralizing each ultrathin vibrating part. When the time for dropping the solution has arrived, the neutralizing solution is added successively. At this time, the dispenser 15 for etching droplets continues to drop the etching solution continuously to the next ultrathin vibrating portion group without stopping the operation, and the neutralizer dispenser 20 also successively neutralizes sequentially. The liquid dripping operation is executed.
In addition, after completing the etching droplet and the neutralizing droplet under a series of steps for the ultrathin vibrating portion group having the same thickness, the neutralizing liquid is added under the etching droplet for the next ultrathin vibrating portion group. You may make it implement dripping. For example, the dropping operation of the neutralizing solution after 11 seconds from the start of the dropping of the etching solution after sequentially dropping the etching solution at intervals of 0.1 seconds on the 10 ultra-thin vibrating parts having a deviation of +11 ppm By starting the process, accurate etching for 11 seconds is performed on all ten ultrathin vibrating parts. Subsequently, a fine adjustment operation for 29 ultrathin vibrating portions with a deviation amount of +10 ppm and a fine adjustment operation with respect to 10 ultrathin vibration portions with a deviation amount of +9 ppm are sequentially performed. In this case, it is not always necessary to start the fine-tuning operation from the ultrathin vibrating portion group having a longer etching time, and it is possible to start from the ultrathin vibrating portion group having an arbitrary thickness.
In addition, as a process after finishing the vibration part thickness fine adjustment process, first, the partition plate 10 is peeled off from the piezoelectric wafer 1 using a solvent for removing the adhesive, and the piezoelectric wafer has a concave part 2 side, for example, Aluminum or gold is vapor-deposited on the entire surface to form a full-surface electrode 25 (FIG. 3), and a partial electrode 26 (FIG. 3) is formed at almost the center of the outer surface of the ultrathin vibrating portion 3 by mask vapor deposition or photoetching. Thereafter, the piezoelectric wafer is cut and divided vertically and horizontally along the boundary line between the concave portions to obtain an ultrathin piezoelectric resonator element as shown in FIGS. 3 (a) and 3 (b). This ultra-thin piezoelectric resonator element is assembled in a ceramic package (not shown), and after the necessary wiring is performed, the final resonance frequency is adjusted by additional vapor deposition to the electrode, and the package is sealed and completed. Is done.
In addition, the manufacturing apparatus (thickness fine adjustment apparatus) for performing the said fine thickness adjustment process has the dispenser 15 for etching liquid which drops the etching liquid 16 for fine thickness adjustment individually in each recessed part 2, and The neutralizing solution dispenser 20 for dropping the neutralizing solution 21 for stopping the progress of etching into the recess when the etching time by the etching solution reaches a predetermined time, and the operations of both dispensers are individually controlled (not shown) And a control unit.
[0010]
The controller moves and dispenses the etchant dispenser 15 along a required route so that the etchant is successively dropped onto the plurality of ultrathin vibrating parts 3 having the same thickness variation. While controlling so as to perform the operation, when the time (etching time) in which each ultrathin vibrating part 3 that has received the dropping of the etching solution is immersed in the etching solution reaches a predetermined value, it is continuously continuously in a predetermined order. The movement path and dropping timing of the neutralizing liquid dispenser 20 are controlled so that the Japanese liquid 21 is dropped.
In addition, when the thickness adjustment process is performed in the shortest possible time, both dropping operations are partially performed in parallel without interrupting all ultrathin vibrating parts on one piezoelectric wafer continuously. Need to be done. That is, the etching droplet dropping operation (order) for the ultrathin vibrating portion (group) having the longest etching time and the neutralizing solution dropping operation (order) for the ultrathin vibrating portion (group), followed by the etching time is long. The operation procedure and operation timing are sequentially input and set, such as the etching droplet dropping operation (sequence) for the ultrathin vibrating portion (group) and the neutralizing solution dropping operation (sequence) for the ultrathin vibrating portion (group) Thus, operations such as continuous etching droplets and neutralization droplets are performed in parallel without interruption.
The dropping operation of the neutralizing liquid is started when the time during which the ultrathin vibrating portion is immersed in the etching liquid reaches a specified time, for example, 9 seconds, due to the dropping operation of the etching liquid that has already been started. The neutralizing liquid is dropped with a predetermined time difference one by one with respect to the ultrathin vibrating section group having a wall thickness. Therefore, for example, if the time required for dropping the neutralizing liquid to one ultrathin vibrating portion is 0.1 second, one second is required to finish dropping the ten ultrathin vibrating portions. However, if attention is paid to the individual vibrating parts of the 10 ultra-thin vibrating parts, the neutralizing solution is dropped exactly 9 seconds after the etching solution is dropped. On the other hand, the etching is performed for a uniform time, and the yield of the etching operation is improved.
[0011]
【The invention's effect】
As described above, according to the present invention, in order to manufacture a plurality of ultrathin piezoelectric resonator base plates using a large-area piezoelectric wafer, a plurality of recesses are formed on the surface of the piezoelectric wafer by etching. In the fine adjustment work of the vibration part thickness, the work to stop the progress of the etching following the individual dropping work of the etching solution to finely adjust the thickness of the ultra-thin vibration part on the bottom of each concave part to the specified thickness Are performed individually and efficiently in parallel, so that the fine adjustment accuracy can be improved and the product quality can be prevented from deteriorating.
[Brief description of the drawings]
1A and 1B are explanatory views of a partition plate used in a manufacturing method and a manufacturing apparatus according to an embodiment of the present invention, and a cross-sectional view showing a state under etching droplets.
FIG. 2 is a cross-sectional view showing a state under a neutralized droplet.
FIGS. 3A and 3B are a plan view and a cross-sectional view of an ultrathin piezoelectric resonator element plate manufactured according to the present invention. FIGS.
4A is a view for explaining a method for measuring the thickness of an ultrathin vibrating portion in a recessed portion, and FIG. 4B is a plan view of the piezoelectric wafer after measurement.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Piezoelectric wafer, 2 recessed part, 3 ultra-thin vibration part, 5 metal plate, 6 frequency measuring device, 10 partition plate, 11 through-hole, 12 adhesive agent, 15 dispenser, 16 etching liquid, 20 dispenser, 21 neutralizing liquid.

Claims (2)

In this method, a plurality of ultrathin piezoelectric resonator base plates each comprising an ultrathin vibrating portion and a thick annular surrounding portion integrated at the entire periphery of the ultrathin vibrating portion are manufactured using a large area piezoelectric wafer. And
Forming a plurality of recessed portions in a predetermined arrangement by etching on the surface of the piezoelectric wafer to form the ultrathin vibrating portion on the bottom surface of each recessed portion; and
A thickness measuring step for measuring a variation in thickness of each ultra-thin vibrating portion formed on the piezoelectric wafer;
In order to correct the variation in the thickness of each ultra-thin vibrating portion detected in the thickness measurement step and reduce the thickness to the specified thickness, the etching solution is dropped into each recessed portion, and the etching solution is dropped. Thickness fine adjustment step of dropping a neutralizing solution to neutralize the etching solution after a predetermined time later into each recess,
A method of manufacturing an ultrathin piezoelectric resonator element plate comprising: An apparatus for manufacturing a plurality of ultrathin piezoelectric resonator elements using a large-area piezoelectric wafer having a plurality of recesses provided with an ultrathin vibration part on the bottom surface in a predetermined arrangement on the surface,
A dispenser for an etching solution that individually drops an etching solution for fine adjustment of the thickness in each recessed portion, and a neutralizing solution that stops the progress of etching in the recessed portion when the etching time by the etching solution reaches a predetermined time. A neutralizing liquid dispenser to be dripped, and a control unit for individually controlling the operation of both dispensers,
The controller controls the dispenser for the etchant so that the etchant is sequentially dropped on the plurality of ultrathin vibrating parts, while the etching time for the plurality of ultrathin vibrating parts sequentially reaches a predetermined time. An apparatus for producing an ultrathin piezoelectric resonator element plate, wherein the neutralizing liquid dispenser is controlled to drop the neutralizing liquid.

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