JP4589046B2 - Antistatic electronic device and method of manufacturing the same - Google Patents

Description

  The present invention relates to the protection of various electronic devices, electronic components, and electronic elements from electrostatic discharge (ESD).

  The recent downsizing, speeding up, and energy saving of electronic devices and electronic components have promoted the miniaturization of the structure of electronic elements and caused a decrease in the resistance of electronic elements to ESD, etc. Protection during manufacturing and mounting has become an important issue. Examples of this include semiconductor devices such as so-called IC chips and LSI chips, liquid crystal display panels, plasma display panels, and magnetic heads of magnetic recording / reproducing electronic devices. Among them, the magnetic head of the magnetic recording / reproducing electronic apparatus is sensitive to ESD so that the GMR element is destroyed by charging of 2 to 5 V, and there is a great need for antistatic.

  In order to prevent charging, it is effective to form an antistatic thin film on an electronic element and a substrate on which the electronic element is mounted, and to release the electric charge generated in these thin films. Withstands mechanical stress, thermal stress, chemical stress, etc. caused by heating, cleaning, etc. performed in manufacturing, mounting, assembly process, etc., antistatic property, antistatic heat resistance and solvent resistance, adhesion, etc. Otherwise, problems such as insufficient antistatic properties during the production process, elution of the film itself, and peeling off occur.

  In order to selectively protect only the parts that need protection, such as electronic elements, and to allow further processing for other parts, to cover only the parts that need protection with a conductive thin film It is also necessary to be able to form a fine pattern.

  Furthermore, when it is preferable to remove the antistatic thin film after the manufacture is completed, it is preferable to remove the antistatic thin film before finally sealing the entire apparatus, or in the case of a multilayer substrate. Thus, it may be preferable to be able to remove the antistatic thin film in order to prevent electrification only in the middle of the manufacturing process and then add further processing.

  That is, the antistatic thin film of the electronic device is required to have heat resistance, solvent resistance, adhesion, pattern formability, etc. in addition to antistatic properties. In some cases, the possibility of removal is required.

  As such a technique, Patent Document 1 discloses a conductive resin solution comprising a solvent-soluble conductive resin and an aggregation inhibitor and / or a dopant, and a photocurable resin having an acidic group or a salt of an acidic group in the side chain. And a composition capable of forming a film having the above-described characteristics by dispersing the conductive resin in a substantially molecular form and dispersing it in the photocurable resin.

  That is, the conductive resin is dispersed in a photocurable resin having a structure with a high affinity to it in combination with an anti-aggregation agent so that it is contained in a substantially molecular form, and the conductive resin has a high concentration. Thus, the above characteristics are realized by ensuring high conductivity and making the photocurable resin bear patterning characteristics, heat resistance, adhesion, film strength, solvent resistance, and the like. However, in this system, conductive materials and additives are mixed and compounded with the photocurable resin, so that the properties of the photocurable resin such as mechanical, thermal strength, solvent resistance, and adhesiveness are correspondingly increased. The possibility of decline cannot be denied.

Thus, in order to prevent the deterioration of the characteristics of the photocurable resin due to the mixing of the conductive substance and the additive with the photocurable resin, a two-layer structure (for example, forming a conductive layer on the photocurable resin layer (for example, Patent Document 2) and a multilayer structure (see Patent Document 3, for example) in which a photocurable resin layer and a conductive layer are separated have been proposed. However, in the former, since a target substrate or the like is exposed to monomer vapor and then polymerized to form a conductive polymer layer, a large-scale electronic device such as a vacuum evaporation electronic device is required. In the latter case, the purpose is to remove the charge at the time of electron beam irradiation for curing. Therefore, there is a possibility that mechanical strength and solvent resistance that do not cause peeling even after various processes such as heating and washing can not be obtained. high. In addition, in electronic devices that are vulnerable to ESD, there is a problem in using charged particle beams such as electron beams.
JP 2003-253143 A (Claims) JP-A-6-256690 (Claims) JP-A-11-203937 (Claims)

  The present invention solves the above problems, and in addition to antistatic properties, the electronic device and the electronic device are protected by an antistatic layer that is excellent in heat resistance and solvent resistance, adhesion, pattern formation, etc. It aims to provide a method. Still other objects and advantages of the present invention will become apparent from the following description.

  According to one aspect of the present invention, an antistatic electronic device having an antistatic layer as an outermost layer, wherein the antistatic layer has a concentration gradient of the antistatic material from the outer surface toward the inside of the layer. An antistatic electronic device is provided.

  According to the aspect of the present invention, it is excellent in any of antistatic properties, adhesion properties, pattern forming properties, and the like, and even when processing such as heating and washing is performed, electronic elements and the like can be protected from electrostatic disturbances such as ESD. An electronic device that can be realized can be realized.

  The antistatic layer is patterned, the antistatic layer is patterned by irradiating a patternable material with active energy rays, and a material that can be patterned with active energy rays In some cases, it is preferable that the material contains a material that is cured by active energy rays, and that the antistatic material contains a surfactant, a conductive polymer, or a mixture thereof.

  According to another aspect of the present invention, an antistatic precursor layer containing a material that can be patterned by active energy rays is formed on an electronic device, and an antistatic material layer is formed on the antistatic precursor layer. The antistatic material layer is impregnated into the antistatic precursor layer from the antistatic material layer, and the antistatic precursor layer is formed as an antistatic layer. There is provided a method for manufacturing an electronic device, comprising removing, irradiating active energy rays to pattern an antistatic layer, and forming a patterned antistatic layer by a development process.

  According to the aspect of the present invention, it is excellent in any of antistatic properties, adhesion properties, pattern forming properties, and the like, and even when processing such as heating and washing is performed, electronic elements and the like can be protected from electrostatic disturbances such as ESD. An electronic device that can be manufactured can be manufactured.

  The antistatic material layer has such a transparency that the antistatic layer can be patterned by irradiation of active energy rays through the layer, and the active energy rays are charged on the antistatic precursor layer. After forming the antistatic material layer, before removing the antistatic material layer from the electronic device, and removing the antistatic material layer from the electronic device and developing using different chemicals. Alternatively, the removal of the antistatic material layer from the electronic device and the development processing are performed using the same agent, the irradiation of active energy rays is performed with an uncharged beam, and the material can be patterned with active energy rays. The material contains a material that is cured by active energy rays, the antistatic material layer contains a surfactant, a conductive polymer, or a mixture thereof, The antistatic material layer includes an antistatic material, the antistatic material layer includes a material that can be patterned by active energy rays, and includes removal of the patterned antistatic layer. May be preferred.

  According to the present invention, it is excellent in any one of antistatic properties, adhesiveness, pattern formability, and the like, and can protect electronic elements and the like from electrostatic disturbances such as ESD even when processing such as heating and washing is performed. An electronic device and a method for manufacturing the electronic device can be realized.

  Embodiments of the present invention will be described below with reference to the drawings, examples and the like. In addition, these figures, Examples, etc. and description illustrate the present invention, and do not limit the scope of the present invention. It goes without saying that other embodiments may belong to the category of the present invention as long as they match the gist of the present invention. In the drawings, the same reference sign means the same element.

  The electronic device according to the present invention has an antistatic layer in the outermost layer, and has a concentration gradient of the antistatic material from the outer surface of the antistatic layer toward the inside of the layer.

  In the electronic device according to the present invention, the antistatic layer is provided in the outermost layer in order to prevent charging due to an external action. Here, the electronic apparatus according to the present invention may be a final product, a completed part, or an intermediate part. In the case of an intermediate part, this antistatic layer may be removed before reaching the final product. For example, when the electronic device according to the present invention is finally sealed with an epoxy resin or the like to make a product, the sealing may be performed with the antistatic layer left, if there is no problem in the performance of the final product. If it is better to remove the antistatic layer for some reason, sealing may be performed after removing work such as peeling. Further, when the electronic device according to the present invention is a multilayer electronic device, it is necessary to provide an antistatic layer according to the present invention and then further provide an upper layer portion for preventing charging during the manufacturing process. It is also conceivable to remove the antistatic layer according to the invention after the process.

  The antistatic layer according to the present invention has a concentration gradient of the antistatic material from the outer surface of the antistatic layer toward the inside of the antistatic layer. With such a concentration gradient, the concentration of the antistatic material is kept high in the vicinity of the outer surface in the cross section of the antistatic layer, and sufficient antistatic performance can be exhibited.

  In addition, by keeping the concentration of the antistatic material at zero or low in areas other than the vicinity of the outer surface, the antistatic layer can withstand mechanical stress, thermal stress, chemical stress, heat resistance, solvent resistance, adhesion, It becomes easy to ensure pattern formability and the like. That is, when the antistatic layer is mainly composed of a material that can withstand mechanical stress, thermal stress, chemical stress, and has excellent physical properties such as solvent resistance and adhesion, this is usually due to the presence of the antistatic material. In many cases, such physical properties are deteriorated. However, it is possible to suppress such deterioration of physical properties by keeping the concentration of the antistatic material at zero or low in a portion other than the vicinity of the outer surface.

  Note that the concentration gradient of the antistatic material means that the concentration gradually decreases from the outer surface to the opposite surface in the cross section of the antistatic layer, but the gradual decrease is not monotonous. Also good. Further, any gradual reduction pattern may be used. If necessary, in the cross section of the antistatic layer, the concentration of the antistatic material is set at one point with respect to any portion near the outer surface and any other portion (for example, the portion near the surface opposite to the outer surface). When measured, if the former concentration is higher than the latter concentration, it can be considered that the concentration gradient in the present invention exists.

  In order to obtain the concentration gradient of the antistatic material according to the present invention, any method may be adopted. However, an antistatic material layer is formed on the antistatic precursor layer and left as it is or heated (for example, prebaked). However, the antistatic material is allowed to permeate into the antistatic precursor layer from the antistatic material layer by holding it for a predetermined time, thereby producing a concentration gradient of the antistatic material in the antistatic precursor layer. A method of forming an antistatic layer according to the above is one preferred method. This predetermined time can be arbitrarily determined according to the desired antistatic performance. When both the antistatic material layer and the antistatic precursor layer are liquid, it is often sufficient to hold at room temperature for about 0.5 to 120 minutes.

  In addition, the antistatic precursor layer according to the present invention is a layer before the antistatic material for achieving antistatic performance by realizing the concentration gradient of the antistatic material in the antistatic layer for preventing the charging of the electronic device. Means. The antistatic material layer means a layer containing an antistatic material provided in contact with the antistatic precursor layer in order to realize the above-described concentration gradient of the antistatic material. This layer may remain as it is after the formation of the antistatic layer, but is usually removed.

  The antistatic precursor layer in the present invention is not necessarily in a liquid state, and may be semi-solid or solid by heat treatment or the like so as to maintain a certain shape. The antistatic material layer may be solid as long as the antistatic material can penetrate into the antistatic precursor layer, but a liquid is generally advantageous. For example, an antistatic material layer is formed by applying a liquid substance having antistatic performance by a spray method or the like and holding it for a predetermined time, and the antistatic material is infiltrated into the antistatic precursor layer. can do. Note that the antistatic precursor layer and the antistatic material layer do not necessarily need to be recognized as separate layers. In particular, when both are liquids, they may be recognized as only one layer, but such cases may also belong to the category of the present invention.

  Thereafter, the antistatic layer is baked as necessary, and the antistatic layer is cured by cleaning or the like by curing the antistatic layer by irradiation with active energy rays (in this specification, irradiation with active energy rays is also simply referred to as exposure). Even when it comes into contact with a pharmaceutical agent or the like, the antistatic material can be made difficult to flow out.

  The antistatic layer thus obtained is preferably patterned. This is because, in order to enable various operations in the manufacturing process, it is often necessary to provide antistatic performance to the minimum necessary part of the electronic device. Examples of the pattern size include a width of 0.05 μm to 1 mm, a length of 1 μm to 10 mm, and a thickness of 0.05 to 100 μm.

  The patterned antistatic layer will be described in more detail by taking a magnetic head of a magnetic recording / reproducing electronic device as an example. 1 is a schematic side view showing a magnetic head of a magnetic recording / reproducing electronic apparatus (viewed from a direction parallel to the flying surface of the magnetic head), and FIG. 2 is a perspective view of the GMR element (flying surface of the magnetic head). Is a front view). The entire magnetic head 1 is on a silicon substrate 6, for example, and a GMR element 3 is provided at the tip of the magnetic head 1 surrounded by a permanent magnet 2. The GMR element 3 is electrically connected to a read terminal 4 and a write terminal 8. Connected. The GMR element 3 and the lead terminal 4 are electrically connected by a wiring 7.

  In the manufacturing process of the magnetic head 1, it is important to cut out the GMR element 3, and a complicated polishing process is required. FIG. 1 shows the position of polishing. In order to prevent destruction of the GMR element due to charging during this polishing, it is preferable to provide a patterned antistatic layer 5 as shown in FIG. In this example, for example, an antistatic layer having a width of 100 μm, a length of 250 μm, and a thickness of about 5 μm can be provided. The antistatic layer may have any shape. For example, FIGS. 4 and 5 can be illustrated.

  In order to make the antistatic layer patterned, an antistatic precursor layer containing a material that can be patterned by active energy rays is formed on the electronic device, and the antistatic precursor layer is formed on the antistatic precursor layer. An antistatic material layer may be formed, and an antistatic material may be infiltrated into the antistatic precursor layer from the antistatic material layer so that the antistatic precursor layer becomes an antistatic layer.

  Then, remove the antistatic material layer from the electronic device with a drug that can dissolve the antistatic material layer, pattern the antistatic layer by irradiating with active energy rays, and form a patterned antistatic layer by development processing can do. For the removal of the antistatic material layer and the development process, chemicals that can dissolve the antistatic material layer and the antistatic layer are used, but for these chemicals, the same chemical is used even if different chemicals are used. May be.

  Alternatively, when the antistatic material layer has a predetermined permeability to the active energy ray to be irradiated, the antistatic material layer is not removed before the active energy ray irradiation, and the active energy ray Irradiation may be performed after the antistatic material layer is formed on the antistatic precursor layer and before the antistatic material layer is removed from the electronic device. The antistatic material layer can be removed or developed by using different chemicals or the same chemical. However, before the active energy ray irradiation, the antistatic material layer is not removed and activated. In the case where the energy ray irradiation is performed after the antistatic material layer is formed on the antistatic precursor layer and before the antistatic material layer is removed from the electronic device, the antistatic material layer is removed and developed. Can be performed simultaneously, it is preferable to use the same drug. Therefore, in order to enable such an operation, it is preferable that the antistatic material layer has a predetermined permeability with respect to the irradiated active energy ray. “Predetermined permeability” means a transparency that allows the antistatic layer to be patterned by irradiation of an active energy ray through the antistatic material layer. Since it is determined depending on the conditions, it cannot be determined in general, but those skilled in the art can easily determine it by experiments or the like.

  It should be noted that the antistatic layer according to the present invention is manufactured in the case where it is preferable to remove it after the completion of manufacturing, in the case where it is preferable to remove it before finally sealing the entire device, or in the case of a multilayer substrate. In order to prevent charging only in the middle of the process and then add further processing, it may be preferred that it can be removed during the manufacturing process. For such purposes, it is preferable to incorporate a process for removing the patterned antistatic layer during manufacture. The antistatic layer may be removed by any means such as dissolution or peeling of the antistatic layer.

  In this way, according to the present invention, in addition to antistatic properties, it is resistant to mechanical stress, thermal stress, and chemical stress, and is excellent in antistatic properties, adhesion, and pattern formability. Even if it performs, the electronic device which can protect an electronic element etc. from electrostatic disturbances, such as ESD, and the manufacturing method of an electronic device are realizable. Needless to say, a case where only some of the above characteristics are satisfied also belongs to the category of the present invention. In addition, as described above, the electronic device according to the present invention includes not only the final product, but also a completed part and an intermediate part. For example, when there is an intermediate part that satisfies the requirements of the present invention in the middle of manufacturing the final product, the intermediate part corresponds to the electronic device according to the present invention.

  Regarding the component according to the present invention, the antistatic material layer according to the present invention can include a material having antistatic properties. When the material having antistatic properties is in a liquid or solution form, the antistatic material layer may be formed only from this material, but in the case of a solid or liquid or solution, It can be dissolved in a solvent and applied or sprayed in liquid form on the antistatic precursor layer.

  Accordingly, the material having antistatic properties is not particularly limited, and can be appropriately selected from known surfactants, conductive resins, and solutions thereof. For example, for surfactants, carboxylic acid type anionic substances such as sodium laurate and sodium nauroylglutamate, sodium dodecylbenzenesulfonate, naphthalenesulfonic acid-formaldehyde condensate, sodium di (2-ethylhexyl) sulfosuccinate), etc. Sulfonate-type anionic substances such as dodecyl sodium sulfate, dodecyl sulfate polyoxyethylene salts, phosphate-type anionic substances such as sodium monolauryl phosphate, and amine bases such as stearylamine hydrochloride Type cationic substance, stearyltrimethylammonium hydrochloride, distearyldimethylammonium hydrochloride, lauryldimethylbenzylammonium hydrochloride, methylbis (2-hydroxyethyl) cocoaalk Quaternary ammonium salt type cationic substances such as ammonium hydrochloride and nitrate, ester type nonionic substances such as glycerin monostearate, sorbitan monostearate, sucrose stearate, polyoxyethylene nonylphenyl ether, Ether type nonionic materials such as dodecyl polyoxyethylene ether, ester ether type nonionic materials such as polyethylene glycol oleate, polyoxyethylene sorbitan monopalmitate, alkanolamide type nonionic such as lauric acid diethanolamide Substances, carboxybetaine-type amphoteric substances such as lauryldimethylacetate betaine, 2-undecyl-N-carboxymethyl-N-hydroxyethylimidazolinium betaine, etc. Such as glycine type amphoteric substances can be used. These may be used alone or in combination. Moreover, you may use 2 or more types together. Among these, ionic surfactants, particularly quaternary ammonium salt surfactants or mixtures thereof are preferable from the viewpoint of excellent antistatic performance. Furthermore, these substances may be diluted with a suitable solvent.

  In addition, if it is a conductive resin, polyaniline, its derivative sulfonated polyaniline, polypyrrole, polythiophene, polyethylenedioxythiophene, poly (3-alkylthiophene), polythiophene vinylene, polyfuran, polyselenophene, polyfurylene vinylene, Polyparaphenylene, polyparaphenylene vinylene, polythienylene vinylene, polyisothianaphthene, polyacetylene, polynaphthalene, polyanthracene, polypyrene, polyazulene, polynaphthalene vinylene, polyparaphenylene sulfide, or derivatives or precursors thereof, so-called Examples include materials included in the category of conductive polymers. These may be used alone or in combination of two or more. Among these, polyaniline or a derivative thereof, sulfonated polyaniline, polyethylenedioxythiophene, or each other, or a conductive resin other than them, or the above surfactant, from the viewpoint of being soluble in a solvent that exhibits conductivity And a mixture thereof is particularly preferable.

  As a solvent in the case of using a solvent for forming the antistatic material layer, any solvent may be used as long as it is not contrary to the gist of the present invention. For example, polar solvents such as N-methyl-2-pyrrolidone, nonpolar solvents such as hexane and toluene, alcohols such as methanol and ethanol, ketones such as acetone, and alicyclic compounds such as cyclohexane, Examples thereof include a solvent having a polar part and a nonpolar part such as cyclohexanone.

  Note that the above-mentioned agents include those having high and low permeability with respect to the irradiated active energy rays. Therefore, when it is required to have a predetermined permeability to the irradiated active energy ray, it is necessary to select an appropriate agent from such a viewpoint.

  Moreover, in order to exhibit antistatic performance, it may be advantageous to perform doping. In such a case, it is needless to say that an appropriate doping agent should be included in the antistatic material layer according to the present invention. The doping agent may be previously added to the antistatic precursor layer.

  In addition, the antistatic material layer according to the present invention may coexist with a material curable by active energy rays. In this manner, if development processing is performed after irradiation with active energy rays, a cured antistatic material layer can be provided on the antistatic layer having a concentration gradient of the antistatic material, and the antistatic material is detached. May become more difficult and the antistatic performance may be further improved. In this case, as the material that can be cured by the active energy ray, the same material as the main component of the antistatic layer described later can be used.

  Although many materials having antistatic properties are corrosive, in the present invention, the concentration of the materials having antistatic properties can be kept zero or low near the surface opposite to the outer surface. Therefore, it can be said that it is excellent also from the viewpoint of preventing corrosion of parts under the antistatic layer.

  In addition, as described above, adhesion to an electronic device, flexibility, mechanical, thermal strength, and the like can be determined by the characteristics of the main component of the antistatic layer. By selecting appropriately, it is possible to obtain characteristics suitable for the purpose, such as adhesion to electronic devices, chemical resistance, mechanical and thermal strength, and antistatic performance of the antistatic layer.

  As the main component of the antistatic layer according to the present invention, that is, the material of the antistatic precursor layer, a solid layer can be finally formed, and when it comes into contact with the antistatic material layer, the antistatic material penetrates and diffuses. Any material can be selected as long as it can be used, but an organic material is usually preferable in terms of easily imparting a shape such as a pattern. Since it is practical to give the shape such as a pattern by irradiation with active energy rays, more specifically, a material that is cured by active energy rays is preferable. As such a material, a known photo-curable resist can be used. In the manufacturing process of an electronic device, resist patterning is often performed using active energy rays, so that these devices can be used and a fine pattern can be obtained with good reproducibility.

  The resist material may have a property that can be removed with a solvent or the like by an active energy ray, which is called a positive type. However, the resist material contains a material that is hardened by an active energy ray, which is called a negative type. It is excellent in terms of properties and the like, and is often preferable. In the latter case, the antistatic layer is applied to the surface of the electronic device in advance, in addition to the method in which the antistatic layer is once applied to the surface of the electronic device and then selectively irradiated with active energy rays using a mask. It is also possible to employ a method in which active energy ray irradiation is performed without applying a mask after coating, and subsequent development processing is omitted. In addition, since the resist material is designed so that the cured portion can be removed after normal use, when it is used as the main component of the antistatic layer in the present invention, this resist material is used in applications where it is necessary to remove the antistatic layer after use. This is also advantageous.

  Examples of the photocurable negative resist include, after curing, acrylate resins such as polyester acrylate, urethane acrylate, epoxy acrylate, polyether acrylate, spiraline acrylate, and polybutadiene acrylate, methacrylate resins, A curable material capable of forming a polyvinylphenol resin, a poly (methyl isopropenyl ketone) resin, a polyglutarimide resin, a poly (olefin sulfone) resin, a polyimide resin, or the like can be used. Mixtures may be used. These materials are polymerized and cured by irradiation with active energy rays, and may include so-called monomers and oligomers. In the present invention, the term “curing” means that the molecular weight is increased by polymerization and a cross-linked structure is formed to lose or reduce the solubility in a drug such as a solvent. These materials may be liquid, for example, solid materials such as dry films.

  As the material for the antistatic precursor layer, in addition to the curable material, for example, an acrylic, methacrylic, vinyl, imide-based monomer or oligomer is used as it is and is non-curable and reacts with the curable material. The resulting material may coexist. There is no restriction | limiting in particular in the compounding ratio of these two materials, It can select suitably in order to match the characteristic of the formed film | membrane or pattern with a desired objective. For example, a material having one or two groups active to active energy rays in one molecule and a material having three or more groups active to active energy rays in one molecule can be used in combination. . In this way, it is possible to control and balance desired antistatic properties, heat resistance, solvent resistance, adhesion, and the like so as to withstand mechanical stress, thermal stress, and chemical stress.

  As a material for the antistatic precursor layer, these agents may be used in combination with a thermosetting agent suitable for the above-described resin. For example, a combination of a polyester acrylate resin and a blocked isocyanate compound blocked with lactams or oximes can be used to cure by heat by irradiation (exposure) with active energy rays, post-baking after development. It may be possible to further increase the strength of the pattern.

  Furthermore, as a material for the antistatic precursor layer, a photopolymerization initiator, a solvent, and the like can be appropriately used as other components depending on the purpose. There is no restriction | limiting in particular as a photoinitiator, The substance generally known as a photoinitiator, derivatives thereof, those mixtures, etc. are mentioned. For example, benzophenone, 1-hydroxy-cyclohexyl-phenyl ketone, 2,2-dimethoxy-1,2-diphenylethane-1-one, 2-hydroxy-2-methyl-1-phenylpropan-1-one, 1- [ 4- (2-hydroxyethoxy) -phenyl] -2-hydroxy-2-methyl-1-propane, 2-methyl-1- [4- (methylthio) phenyl] -2-morpholinopropan-1-one, 2 -Benzyl-dimethylamino-1- (4-morpholinophenyl) -butanone-1, bis (2,4,6-trimethylbenzoyl) -phenylphosphine oxide, bis (2,6-dimethoxybenzoyl) -2,4 4'-trimethyl-pentylphosphine oxide, 2,4,6-trimethylbenzoyl-diphenyl-phosphine Oxide, oligo [2-hydroxy-2-methyl-1- [4- (1-methylvinyl) phenyl] propanone], 2,4,6-trimethylbenzophenone, 4-methylbenzophenone, 2,4,6-trimethylbenzoyl Phosphine oxide, 1- [4- (4-benzoylphenylsulfanyl) phenyl] -2-methyl-2- (4-methylphenylsulfanyl) propan-1-one, and the like. Content of a photoinitiator can be suitably selected according to the objective, There is no restriction | limiting in particular.

Further, if desired, an antistatic material may be previously contained in the antistatic precursor layer. In this case, if the concentration of the antistatic material is too large, it may be insufficient in terms of mechanical strength and the like, so that the concentration should generally be kept low. For example, if the surface resistivity of the antistatic precursor layer is about 10 ¹² to 10 ¹¹ Ω / □, the antistatic performance of the entire antistatic layer is improved, and the electronic device is more efficiently removed from ESD. Sometimes it can be protected.

  In order to form the antistatic precursor layer, the antistatic precursor layer may be used by adding it to a solvent. The use of a solvent makes it easier to penetrate the antistatic material into the antistatic precursor layer. There is no restriction | limiting in particular as such a solvent, According to the objective, it can select suitably. For example, N-methyl-2-pyrrolidone, butyloctanone, propylene carbonate, N-ethylpyrrolidone, N-formpiperidine, N-methylsuccinimide, 2-pyrrolidone, N-methylcaprolactam, trimethyloxazole, ketones, alcohols Or polar solvents such as water, aromatics such as benzene, toluene and xylene, nonpolar solvents such as hydrocarbons such as hexane and cyclohexane, and the like. These solvents may be used alone or in combination of two or more. When a solvent is used, it is generally preferable to remove the solvent by pre-baking before irradiation with active energy rays.

  The antistatic precursor layer according to the present invention can be formed by employing a known coating method. For example, a spin coating method, a blade coating method, a bar coating method, a dip coating method or the like, a method of performing a treatment such as drying or pre-baking on the coated film, or a commercially available negative dry film Examples thereof include a method of laminating a resist or a liquid photocurable negative resist formed into a dry film on the surface of an electronic device.

  Also, as the coating method of the antistatic material layer according to the present invention, a known coating method can be applied as in the case of the antistatic precursor layer. However, when the antistatic precursor layer is liquid, a spray method is used. A method that does not disturb the structure is preferable.

  Irradiation of active energy rays in the present invention is preferably performed using a mask as necessary. In the case of forming a pattern, the shape of the pattern can be arbitrarily determined according to the shape of the portion to be prevented from being charged. As the active energy rays according to the present invention, visible light, ultraviolet rays, excimer rays, extreme ultraviolet rays, X-rays, and the like can be used as necessary. By selecting the type and intensity of the active energy rays, It is preferable to realize a desired pattern. In addition, since the antistatic layer according to the present invention is used for a portion that is very sensitive to charging, avoid using a charged beam that would cancel the effect of the antistatic layer. Should.

  After the active energy ray irradiation, a development treatment is preferably performed in order to reveal the formed pattern. When development processing is performed, unexposed portions in the coating film can be dissolved and removed. In the present invention, the development process is the same as the development process in the resist. After irradiation with active energy rays, the surface of the electronic component is washed with a solvent to remove the cured non-dissolved part. It means an operation to elute and reveal a pattern.

  Further, after development, post-exposure, post-bake, or drying is performed as necessary to improve the strength and adhesion of a desired pattern.

  The agent used for the removal of the antistatic material layer or the development treatment can be appropriately selected according to the material used for the antistatic material layer or the antistatic layer. If the antistatic material layer is liquid, it can be selected from common organic solvents. When a resist material is used for the antistatic layer, a known chemical agent suitable for development of the resist material is selected, and if the antistatic material layer is formed using a material that can be removed by this chemical agent, the chemical treatment is performed once. It is possible to finish the removal of the antistatic material layer and the development process.

  The procedure for providing the antistatic layer in the electronic device according to the present invention as described above is as follows. First, as shown in FIG. 6A, an antistatic precursor layer 61 is provided on an electronic device 62 including a place where a desired antistatic layer pattern is to be formed. Next, as shown in FIG. 6B, an antistatic material layer 63 is provided on the antistatic precursor layer 61. Before providing the antistatic material layer 63, the antistatic precursor layer 61 may be pre-baked. Thereafter, by allowing a predetermined time to pass, the antistatic material 64 penetrates and diffuses into the antistatic precursor layer 61 as shown in FIG. Thereby, the antistatic layer 65 has a concentration gradient from the interface between the antistatic layer 65 and the antistatic material layer 63 toward the inside of the antistatic layer 65. Next, as shown in FIG. 6-D, the antistatic material layer 63 is removed. Thereafter, exposure is performed through an antistatic layer 65 having transparency, and development is performed to form a patterned antistatic layer 66 as shown in FIG. 6E.

The various characteristics of the antistatic layer of the present invention thus obtained can be set to any level depending on the actual situation. For example, the antistatic performance of the patterned antistatic layer can In general, it is preferable that the surface resistivity of the non-converted material is 1 × 10 ¹⁰ Ω / □ or less with respect to the outer surface. More preferably, it is 1 × 10 ⁹ Ω / □ or less.

Further, the heat resistance and washing resistance of the antistatic performance can be evaluated by measuring the surface resistivity after a predetermined heat treatment or washing treatment. Also in this case, in general, the surface resistivity is preferably 1 × 10 ¹⁰ Ω / □ or less. More preferably, it is 1 × 10 ⁹ Ω / □ or less.

  The adhesion of the pattern can deteriorate as a result of chemical treatment. As for the adhesion of the pattern, for example, the residual rate in a peel test with a tape after a predetermined chemical treatment is preferably 90% or more, more preferably 95% or more, and particularly 100%. It can be judged that it is preferable.

  Patternability (pattern formation performance) can be evaluated based on the pattern shape and line & space resolution when a pattern is formed under a predetermined condition. How much patterning is required can be determined according to the actual situation, but if the generated pattern shape is normal and the line and space resolution is about 50 μm or less, it is generally judged to be sufficient. The

  Next, examples and comparative examples of the present invention will be described in detail. In the following, a resist material was used for the antistatic precursor layer according to the present invention (that is, the main component for forming the antistatic layer). Each measurement was performed as follows.

-Antistatic performance evaluation About the film-like or patterned antistatic layer, the surface resistivity by JISK6911 was measured on 20 degreeC conditions using the resistance measuring device (ADVANTEST; R12702A, Keithley; 617).

  In order to grasp the influence of heat applied in the manufacturing process as a model, the film-like or patterned antistatic layer was heat-treated at an atmospheric temperature of 260 ° C. for 10 seconds, and then subjected to surface resistance in the same manner as described above. The rate was measured. This evaluation is referred to as heat resistance evaluation.

  Further, the film-like or patterned antistatic layer was subjected to ultrasonic cleaning in 2-propanol at 40 ° C. for 20 minutes, dried at 60 ° C. for 5 minutes, and then surface resistivity was measured in the same manner as described above. . This evaluation is called cleaning resistance evaluation.

-Adhesion evaluation It evaluated by the tape peeling test. Specifically, the pattern formed on the polyimide film was subjected to ultrasonic cleaning in acetone at 40 ° C. for 20 minutes, then dried at 60 ° C. for 5 minutes, and then 10 × 10 pieces at 1 mm intervals with respect to the pattern. After putting (100 pieces) of crosscuts, the adhesive tape was applied and peeled off, and the ratio of the number of remaining patterns after peeling was evaluated as the remaining ratio% (the ratio of the number of cuts of the remaining pattern).

-Evaluation of patternability Condition of 800 mJ / cm < ² > through the quartz glass mask having a line-and-space pattern with a width of 10-200 [mu] m, by applying light of a super high pressure mercury lamp having a center wavelength of 365 nm to the film after pre-baking and before exposure And cured. Next, the removal and development treatment of the antistatic material layer using a 0.5 wt% sodium carbonate solution at 40 ° C. (hereinafter, “removal and development of the antistatic material layer” is simply referred to as “development”). The pattern was formed by washing with water and post-baking at 120 ° C. for 30 minutes. This pattern was evaluated for shape and line & space resolution.

[Example 1]
-Preparation of photocurable negative resist material 100 parts by weight of N-methyl-2-pyrrolidone 50 parts by weight of sulfonated unsaturated polyester resin, 15 parts by weight of dipentaerythritol hexaacrylate as a photocuring agent, hydroxyketone photopolymerization 10 parts by weight of the initiator was dissolved to prepare a polyester photocurable negative resist material.

Preparation of antistatic liquid Methylbis (2-hydroxyethyl) cocoalkylammonium nitrate was dissolved in 2-propanol to obtain an antistatic liquid containing 30% by weight of methylbis (2-hydroxyethyl) cocoalkylammonium nitrate.

-Film formation About 400 cm < ² > was apply | coated on the polyimide film by bar coating with the obtained resist material, and it was set as the base film. This base layer corresponds to an antistatic precursor layer. The film thickness was 3 nm.

  About 2 mL of an antistatic liquid was sprayed onto the liquid base film with a spray electronic device to form an antistatic material layer on the base layer.

The antistatic material is infiltrated into the antistatic precursor layer from the antistatic material layer, left for 3 minutes so that the antistatic precursor layer becomes an antistatic layer, and then pre-baked at 100 ° C. for 10 minutes to form a solid film It was. The solid film was cured by irradiating light of an ultrahigh pressure mercury lamp having a center wavelength at 365 nm under the condition of 800 mJ / cm ² to the solid film. Thereafter, post-baking was performed at 120 ° C. for 30 minutes. The total film thickness was 3 μm. The antistatic layer thus obtained has a concentration gradient from the surface toward the inside. Such a concentration gradient was the same for the other examples.

  The following evaluation was performed about these.

・ Evaluation of antistatic performance was 4 × 10 ⁶ Ω / □. When the surface resistivity was measured by developing with a 0.5 wt% sodium carbonate solution at 40 ° C. for 30 seconds, it was found to be 7 × 10 ⁷ Ω / □. Accordingly, it is possible to solve a problem that an electronic device such as a device is destroyed in a process step exposed to plasma such as etching or sputtering. Such an effect was the same for the other examples.

・ Heat resistance evaluation, washing resistance evaluation As a result of conducting a heat resistance test on the film after the above development processing, the surface resistivity was 9 × 10 ⁷ Ω / □, and the surface resistivity in the cleaning resistance evaluation was 6 × 10 ⁸ Ω. It was / □ and was favorable.

-Adhesive evaluation As a result of evaluating the adhesiveness of the film after the development processing, the residual ratio was 100%.

-Evaluation of patterning property Since the antistatic material layer has predetermined transparency, there was no abnormality in the shape of the obtained pattern, and the line and space resolution was 10 µm.

[Example 2]
The base film was pre-baked to form a solid film, and then an antistatic solution was applied. Then, the antistatic material was allowed to permeate the antistatic precursor layer by leaving it for 30 minutes. Antistatic layer and antistatic layer patterns were prepared.

When the obtained antistatic layer was evaluated in the same manner as in Example 1, the surface resistivity of the formed film was 4 × 10 ⁶ Ω / □, and the surface resistivity after development processing was 1 × 10 ⁸ Ω. It was / □ and was favorable.

In addition, the film after the development treatment had a surface resistivity of 1 × 10 ⁸ Ω / □ in heat resistance evaluation, and a surface resistivity of 9 × 10 ⁸ Ω / □ in the cleaning resistance evaluation, which was good. .

  As a result of evaluating the adhesion of the film after the development treatment, the residual ratio was 100%. As a result of evaluating the patterning property, there was no abnormality in the shape of the pattern, and the line and space resolution was 10 μm.

[Example 3]
In Example 2, an antistatic layer and an antistatic layer pattern were produced in the same manner as in Example 2 except that the conductive resin composition disclosed in JP-A-2003-253143 was used as the antistatic liquid.

  The conductive resin composition was obtained as follows. Oxidized dedoped polyaniline synthesized by chemical polymerization method was dissolved in N-methyl-2-pyrrolidone to prepare 4% by weight of oxidized dedoped polyaniline, and an N-methyl-2-pyrrolidone solution was prepared. 1 part by weight of cyclohexanone and 0.036 part by weight of dodecylbenzenesulfonic acid were added to and mixed with each other to obtain a conductive resin composition.

When the same evaluation was performed on the obtained antistatic layer, the surface resistivity of the formed film was 2 × 10 ⁷ Ω / □, and the surface resistivity after development processing was 4 × 10 ⁸ Ω / □. ,It was good.

Further, the film after the development processing described above, the surface resistivity at the evaluation of heat resistance is 4 × 10 ⁸ Ω / □, the surface resistivity at washability evaluation 5 × 10 ⁸ Ω / □ and is, were good .

  As a result of evaluating the adhesion of the film after the development treatment, the residual ratio was 100%. As a result of evaluating the patterning property, there was no abnormality in the shape of the pattern, and the line and space resolution was 10 μm.

[Example 4]
The antistatic layer and antistatic layer were the same as in Example 2 except that a 5% by weight solution of sulfonated polyaniline (1: 1 mixture of solvent: water and 2-propanol (weight ratio)) was used as the antistatic solution. A layer pattern was prepared. When the same evaluation was performed on the obtained antistatic layer, the surface resistivity of the formed film was 3 × 10 ⁶ Ω / □, and the surface resistivity after development processing was 9 × 10 ⁷ Ω / □. ,It was good.

Further, the film after the development treatment had a surface resistivity of 1 × 10 ⁸ Ω / □ in the heat resistance evaluation and 2 × 10 ⁸ Ω / □ in the cleaning resistance evaluation, which were favorable. .

  As a result of evaluating the adhesion of the film after the development treatment, the residual ratio was 100%. As a result of evaluating the patterning property, there was no abnormality in the shape of the pattern, and the line and space resolution was 10 μm.

[Example 5]
Implemented except that a 3 wt% solution of polyethylenedioxythiophene and polystyrene sulfonic acid 1: 1 (weight ratio) (1: 1 mixture of solvent: water and 2-propanol (weight ratio)) was used as the antistatic solution. In the same manner as in Example 2, an antistatic layer and an antistatic layer pattern were prepared. When the same evaluation was performed on the obtained antistatic layer, the surface resistivity of the formed film was 6 × 10 ⁴ Ω / □, and the surface resistivity after development processing was 7 × 10 ⁶ Ω / □. ,It was good.

In addition, the film after the development treatment had a surface resistivity of 1 × 10 ⁸ Ω / □ in the heat resistance evaluation and 3 × 10 ⁸ Ω / □ in the cleaning resistance evaluation, which were favorable. .

  As a result of evaluating the adhesion of the film after the development treatment, the residual ratio was 100%. As a result of evaluating the patterning property, there was no abnormality in the shape of the pattern, and the line and space resolution was 10 μm.

[Example 6]
Charged in the same manner as in Example 1 except that an acrylic copolymer resin resist material (ACA320; Daicel, UCB) was used as the photocurable negative resist material, and the base film was formed by bar coating. Antistatic layer and antistatic layer patterns were prepared. The resist film forming conditions are shown below. Pre-baking: 80 ° C. for 5 minutes, exposure amount: 600 mJ / cm ² , development conditions: dipping in 0.2% sodium carbonate aqueous solution for 30 seconds, rinsing: 20 seconds in ultrapure water, post-baking: 100 ° C., 5 minutes.

When the same evaluation was performed on the obtained antistatic layer, the surface resistivity of the formed film was 5 × 10 ⁶ Ω / □, and the surface resistivity after development processing was 1 × 10 ⁸ Ω / □. ,It was good.

In addition, the film after the development treatment had a surface resistivity of 1 × 10 ⁸ Ω / □ in heat resistance evaluation, and a surface resistivity of 9 × 10 ⁸ Ω / □ in the cleaning resistance evaluation, which was good. .

  As a result of the adhesion evaluation of the film after the development treatment, the residual ratio was 99%. As a result of the patterning evaluation, there was no abnormality in the pattern shape, and the line & space resolution was 10 μm.

[Example 7]
The antistatic layer and antistatic layer were the same as in Example 6 except that a 5 wt% solution of sulfonated polyaniline (1: 1 mixture (weight ratio) of solvent: water and 2-propanol) was used as the antistatic solution. A layer pattern was prepared.

When the same evaluation was performed on the obtained antistatic layer, the surface resistivity of the formed film was 1 × 10 ⁶ Ω / □, and the surface resistivity after development processing was 2 × 10 ⁷ Ω / □. ,It was good.

In addition, the film after the development treatment had a favorable surface resistivity of 4 × 10 ⁷ Ω / □ in the heat resistance evaluation and 1 × 10 ⁸ Ω / □ in the cleaning resistance evaluation. .

  As a result of evaluating the adhesion of the film after the development treatment, the residual ratio was 100%. As a result of evaluating the patterning property, there was no abnormality in the shape of the pattern, and the line and space resolution was 10 μm.

[Example 8]
After the base film is formed and pre-baked to form a solid film, a 3 wt% solution of polyethylenedioxythiophene and polystyrene sulfonic acid 1: 1 (weight ratio) (1: 1 mixture of solvent: water and 2-propanol (weight ratio) )) Was applied as an antistatic solution, and then allowed to stand for 30 minutes to allow the antistatic material to penetrate into the antistatic precursor layer, thereby producing an antistatic layer and an antistatic layer pattern in the same manner as in Example 6. .

When the same evaluation was performed on the obtained antistatic layer, the surface resistivity of the formed film was 4 × 10 ⁴ Ω / □, and the surface resistivity after development was 9 × 10 ⁵ Ω / □, It was good.

In addition, the film after the development treatment had a surface resistivity of 7 × 10 ⁷ Ω / □ in the heat resistance evaluation and a surface resistivity of 3 × 10 ⁸ Ω / □ in the cleaning resistance evaluation, which was favorable. .

  As a result of evaluating the adhesion of the film after the development treatment, the residual ratio was 100%. As a result of evaluating the patterning property, there was no abnormality in the shape of the pattern, and the line and space resolution was 10 μm.

[Example 9]
An antistatic layer and an antistatic layer pattern were produced in the same manner as in Example 1 except that a positive resist material (AZ 4000, Clariant Japan) was used as the base film forming resist material and the base film was formed by bar coating. . The resist film forming conditions are shown below. Pre-bake: 100 ° C., 100 seconds, exposure amount: 100 mJ / cm ² , development conditions: AZ400K developer (1: 4) for 100 seconds, rinse: ultrapure water for 20 seconds, post-bake: 120 ° C. for 2 minutes.

When the obtained antistatic layer was evaluated in the same manner, the surface resistivity of the formed film was 1 × 10 ⁶ Ω / □, and the surface resistivity after development processing was 9 × 10 ⁷ Ω / □. It was.

The film after the development treatment had a surface resistivity of 1 × 10 ⁸ Ω / □ in the heat resistance evaluation and a surface resistivity of 5 × 10 ⁹ Ω / □ in the wash resistance evaluation.

[Comparative Example 1]
In Example 1, an antistatic layer and an antistatic layer pattern were prepared in the same manner as in Example 1 except that after the base film was formed, pre-baking and exposure were performed, and the film was cured and then the antistatic solution was applied.

When the obtained antistatic layer was evaluated in the same manner as in Example 1, the surface resistivity of the formed film was 1 × 10 ⁶ Ω / □, but the surface resistivity after the development treatment was Was 7 × 10 ¹² Ω / □ and the antistatic property was lost, indicating that there was no penetration of the antistatic material.

[Comparative Example 2]
An antistatic layer and an antistatic layer pattern were prepared in the same manner as in Example 7 except that after the base film was formed, pre-baking and exposure were performed, the film was cured, and an antistatic solution was applied. When the same evaluation was performed on the obtained antistatic layer, the surface resistivity of the formed film was 2 × 10 ⁶ Ω / □, but the surface resistivity after the development treatment was 4 × 10 6. ^The antistatic property disappeared at ¹³ Ω / □, indicating that there was no penetration of the antistatic material.

  In addition, the invention shown to the following additional remarks can be derived from the content disclosed above.

(Appendix 1)
An antistatic electronic device having an antistatic layer as an outermost layer,
The antistatic layer has a concentration gradient of the antistatic material from the outer surface toward the inside of the layer.
Anti-static electronic device.

(Appendix 2)
The antistatic electronic device according to appendix 1, wherein the antistatic layer is patterned.

(Appendix 3)
The antistatic electronic device according to appendix 1 or 2, wherein the antistatic layer is patterned by irradiating a material that can be patterned with active energy rays.

(Appendix 4)
The antistatic electronic device according to appendix 3, wherein the material that can be patterned by the active energy ray includes a material that is cured by the active energy ray.

(Appendix 5)
The antistatic electronic device according to any one of appendices 1 to 4, wherein the antistatic material includes a surfactant, a conductive polymer, or a mixture thereof.

(Appendix 6)
Forming an antistatic precursor layer containing a material that can be patterned by active energy rays on an electronic device;
Forming an antistatic material layer on the antistatic precursor layer,
Infiltrating the antistatic material from the antistatic material layer into the antistatic precursor layer, and making the antistatic precursor layer an antistatic layer,
Removing the antistatic material layer from the electronic device with a liquid capable of dissolving the antistatic material layer,
Irradiating active energy rays to pattern the antistatic layer,
Forming a patterned antistatic layer by development,
A method for manufacturing an electronic device.

(Appendix 7)
The method of manufacturing an electronic device according to claim 6, wherein the antistatic material layer has a transparency that allows the antistatic layer to be patterned by irradiation of active energy rays through the antistatic material layer. .

(Appendix 8)
The electronic device according to appendix 6 or 7, wherein the irradiation of the active energy ray is performed after the antistatic material layer is formed on the antistatic precursor layer and before the antistatic material layer is removed from the electronic device. Production method.

(Appendix 9)
The method for manufacturing an electronic device according to any one of appendices 6 to 8, wherein the removal of the antistatic material layer from the electronic device and the development treatment are performed using another chemical.

(Appendix 10)
The method for manufacturing an electronic device according to any one of appendices 6 to 8, wherein the removal of the antistatic material layer from the electronic device and the development treatment are performed using the same chemical.

(Appendix 11)
The method for manufacturing an electronic device according to any one of appendices 6 to 10, wherein the irradiation of the active energy ray is performed by an uncharged beam.

(Appendix 12)
The manufacturing method of the electronic device according to any one of appendices 6 to 11, wherein the material that can be patterned by the active energy ray includes a material that is hardened by the active energy ray.

(Appendix 13)
The method for manufacturing an electronic device according to any one of appendices 6 to 12, wherein the antistatic material layer includes a surfactant, a conductive polymer, or a mixture thereof.

(Appendix 14)
14. The method for manufacturing an electronic device according to any one of appendices 6 to 13, wherein the antistatic precursor layer includes an antistatic material.

(Appendix 15)
15. The method for manufacturing an electronic device according to any one of appendices 6 to 14, wherein the antistatic material layer includes a material that can be patterned by active energy rays.

(Appendix 16)
16. The method for manufacturing an electronic device according to any one of appendices 6 to 15, comprising removing the patterned antistatic layer.

It is a typical side view which shows the magnetic head of a magnetic recording / reproducing electronic apparatus. It is a typical perspective view of the GMR element of the magnetic head of a magnetic recording / reproducing electronic apparatus. It is a typical side view which shows a mode that the antistatic layer based on this invention was attached to the magnetic head of a magnetic recording / reproducing electronic apparatus. It is another typical side view which shows a mode that the antistatic layer based on this invention was attached to the magnetic head of a magnetic recording / reproducing electronic apparatus. It is another typical side view which shows a mode that the antistatic layer based on this invention was attached to the magnetic head of a magnetic recording / reproducing electronic apparatus. It is a schematic diagram which shows the procedure which forms the patterned antistatic layer which concerns on this invention. It is another schematic diagram which shows the procedure which forms the patterned antistatic layer based on this invention. It is another schematic diagram which shows the procedure which forms the patterned antistatic layer based on this invention. It is another schematic diagram which shows the procedure which forms the patterned antistatic layer based on this invention. It is another schematic diagram which shows the procedure which forms the patterned antistatic layer based on this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Magnetic head 2 Permanent magnet 3 GMR element 4 Lead terminal 5 Antistatic layer 6 Substrate 7 Wiring 8 Write terminal 61 Antistatic precursor layer 62 Electronic device 63 Antistatic material layer 64 Antistatic material 65 Antistatic layer 66 Patterned Antistatic layer

Claims (5)

Forming an antistatic precursor layer containing a material that can be patterned by active energy rays on an electronic device;
Forming an antistatic material layer on the antistatic precursor layer that is not heat-treated,
The antistatic material layer and the antistatic precursor layer are heated so that the antistatic material penetrates from the antistatic material layer into the antistatic precursor layer, and the antistatic precursor layer is then antistatic resist layer. And none,
Removing the antistatic material layer from the electronic device with a liquid capable of dissolving the antistatic material layer,
Irradiating active energy rays to pattern the antistatic resist layer,
A patterned antistatic resist layer is formed by development processing.
A method for manufacturing an electronic device. Forming an antistatic precursor layer containing a material that can be patterned by active energy rays on an electronic device;
Forming an antistatic material layer on the antistatic precursor layer that is not heat-treated,
The antistatic material layer and the antistatic precursor layer are heated so that the antistatic material penetrates from the antistatic material layer into the antistatic precursor layer, and the antistatic precursor layer is then antistatic resist layer. And none,
Irradiating active energy rays to pattern the antistatic resist layer, and then removing the antistatic material layer from the electronic device with a liquid capable of dissolving the antistatic material layer;
A patterned antistatic resist layer is formed by development processing.
A method for manufacturing an electronic device. The electronic device manufacturing method according to claim 2 , wherein the antistatic material layer has a transparency that allows the antistatic resist layer to be patterned by irradiation of active energy rays through the antistatic material layer. Method. The method for manufacturing an electronic device according to any one of claims 1 to 3 , wherein the removal of the antistatic material layer from the electronic device and the development treatment are performed using different chemicals. Wherein the antistatic layer of material removal from the electronic device and the developing process is performed by using the same drug, the method of manufacturing an electronic device according to any one of 請 Motomeko 1-3.

Images