JP4591378B2 - Manufacturing method of semiconductor device - Google Patents

Description

The present invention relates to a method of manufacturing a semiconductor device.

  Conventionally, a semiconductor dynamic quantity sensor such as an acceleration sensor or a gyro sensor provided with a movable part has a poor durability performance in terms of structure. Therefore, in order to prevent breakage or failure during the sensor manufacturing process, A cap is affixed to the surface.

  For example, Patent Document 1 proposes a cap that is formed by bonding a glass substrate or silicon.

Moreover, in patent document 2, the 1st adhesive sheet is affixed on plate-shaped glass, and glass is isolate | separated into a several glass piece (cap) using the dicing apparatus etc. FIG. Next, a 2nd adhesive sheet is affixed on the some glass piece affixed on the 1st adhesive sheet, and a 1st adhesive sheet is peeled from a some glass piece. Then, one glass piece is adsorbed from the second adhesive sheet by the adsorption device, and this glass piece is installed so as to cover the light receiving part (semiconductor element) of the semiconductor wafer.
JP-T-2004-506203 JP-A-2005-353921

  However, as shown in Patent Document 1, when a cap is formed by bonding a glass substrate or silicon, the cap is formed on the entire surface of a wafer where a plurality of sensors are formed without being divided. For this reason, in order to be able to connect to the sensor circuit, complicated processing such as etching and grinding must be performed after the cap is formed on the entire surface of the wafer in order to expose the pad portion necessary for taking out the electrode. Moreover, since these are expensive in terms of material, the sensor manufacturing cost is also increased.

  In addition, as in Patent Document 2, the method of adsorbing each glass piece and covering the corresponding semiconductor element is inefficient. In addition, even if a plurality of glass pieces are installed on a semiconductor wafer while still being attached to an adhesive sheet, when generating glass pieces from plate-like glass, the exposure of the pad part is not taken into account, so installation A process for exposing the pad portion later is required.

In view of the above points, the present invention provides a semiconductor device in which a plurality of caps are installed on a semiconductor wafer including a plurality of semiconductor elements, and processing for exposing a predetermined region such as a pad is not required after the caps are installed. An object is to provide a manufacturing method.

In order to achieve the above-mentioned object, the invention described in claim 1 is characterized in that a preparation step of preparing a plurality of caps (3) each of which is divided and provided with an adhesive means (3c) and a holding means (1, 2) A holding step for holding a plurality of caps (3), and a semiconductor element (4a) in which each of the caps (3) held by the holding means (1, 2) is provided on a semiconductor substrate (4). Covering step of covering, bonding step of bonding the cap (3) to the semiconductor substrate (4) by the bonding unit (3c), and the plurality of caps (3) from the holding unit (1, 2) In the holding step, the holding means (1, 2) holds the plurality of caps (3) at a predetermined region (4) in the semiconductor substrate (4) after the bonding step. 4b There is a position which is exposed from the plurality of cap (3), in the peeling step, the holding force said holding means (1, 2) holding the cap (3), the adhesive strength of the adhesive means (3c) The holding means comprises a support substrate (1) and a release agent (2) installed on the support substrate (1), and in the holding step, the release agent (2) The area where the cap (3) is held in contact and the release agent (2) contacts the cap (3) is larger than the area where the bonding means (3c) adheres to the semiconductor substrate (4) in the bonding step. Is also small.

  Since each cap (3) is divided in advance, when the cap (3) is attached to each of the plurality of semiconductor elements (4a) of the semiconductor substrate (4), a predetermined region (4b), for example, a pad Can be covered.

  Thereby, after the cap (3) is attached to the semiconductor substrate (4), it is not necessary to perform a complicated process such as etching or grinding in order to expose the predetermined region (4b) of the semiconductor substrate (4).

In addition, this allows the cap (3) to be held by the holding means (1, 2) when the bonding means (3c) of each cap (3) is bonded to the semiconductor substrate (4). When the semiconductor substrate (4) and the holding means (1, 2) are separated, the holding force of the holding means (1, 2) is smaller than the adhesive force of the bonding means (3c), so that the plurality of caps (3) It peels from the holding means (1, 2) while being adhered to the semiconductor substrate (4).

The support substrate (1) and the release agent (2) installed on the support substrate (1) constitute a holding means. And a release agent (2) contacts each cap (3) and hold | maintains these.

In addition, this makes the cap (3) more adhesive than the release agent (2) even if the release agent (2) and the bonding means (3c) have the same adhesion holding force per unit area. It becomes easy to adhere to (3c).

In order to achieve the above-mentioned object, the invention according to claim 2 is characterized in that a preparation step of preparing a plurality of caps (3) each of which is divided and provided with bonding means (3c) and holding means (1, 2) A holding step for holding a plurality of caps (3), and a semiconductor element (4a) in which each of the caps (3) held by the holding means (1, 2) is provided on a semiconductor substrate (4). Covering step of covering, bonding step of bonding the cap (3) to the semiconductor substrate (4) by the bonding unit (3c), and the plurality of caps (3) from the holding unit (1, 2) In the holding step, the holding means (1, 2) holds the plurality of caps (3) at a predetermined region (4) in the semiconductor substrate (4) after the bonding step. 4b Is a position exposed from the plurality of caps (3), and the holding means comprises a support substrate (1) and a release agent (2) placed on the support substrate (1), and the holding step Then, the cap (3) is held in contact with the release agent (2), and the area where the release agent (2) contacts the cap (3) is determined by the bonding means (3c) in the bonding step. It is smaller than the area bonded to the semiconductor substrate (4).

Since each cap (3) is divided in advance, when the cap (3) is attached to each of the plurality of semiconductor elements (4a) of the semiconductor substrate (4), a predetermined region (4b), for example, a pad Can be covered. Thereby, after the cap (3) is attached to the semiconductor substrate (4), it is not necessary to perform a complicated process such as etching or grinding in order to expose the predetermined region (4b) of the semiconductor substrate (4). The support substrate (1) and the release agent (2) installed on the support substrate (1) constitute a holding means. And a release agent (2) contacts each cap (3) and hold | maintains these. Furthermore, in the holding step, the area where the release agent (2) contacts the cap (3) is smaller than the area where the bonding means (3c) adheres to the semiconductor substrate (4) in the bonding step. Thus, even if the release agent (2) and the bonding means (3c) have the same adhesion holding force per unit area, the cap (3) is more adhesive (3c than the release agent (2). ) To be easily adhered.

The invention according to claim 3 is characterized in that, in the covering step, the semiconductor element (4a) is sealed by the cap (3) and the semiconductor substrate (4).

  Thereby, the semiconductor element (4a) can be protected from foreign matters such as chips and moisture.

According to a fourth aspect of the present invention, the cap (3) includes a lid portion (3a) and a support portion (3b) sandwiched between the lid portion (3a) and the semiconductor substrate (4). The support portion (3b) is formed so as to have an opening in a joint surface with the semiconductor substrate (4).

  Thus, the cover (3a) and the support part (3b) can be prepared separately by using the cap (3) as a configuration including the cover part (3a) and the support part (3b).

According to a fifth aspect of the present invention, the lid portion (3a) and the support portion (3b) are separate members, and the holding means (1, 2) includes the lid portion in the holding step. (3a) and the process of joining the said support part (3b) to the said cover part (3a), It is characterized by the above-mentioned.

  By using the lid (3a) and the support (3b) as separate members, the support (3b) combined with the lid (3a) can be changed according to the shape of the semiconductor element (4a).

In the invention according to claim 6 , the adhesive property of the release agent (2) is changed by a temperature change, and the temperature of the release agent (2) is changed between the holding step and the release step. It is characterized by being different.

The invention according to claim 7 is characterized in that, in the peeling step, the temperature of the release agent (2) is set to a temperature at which the holding power is reduced.

According to an eighth aspect of the present invention, the plurality of caps (3) are formed of thermoplastic polyimide or polyamideimide, and when the plurality of caps (3) are in contact with the semiconductor substrate (4). The contact surface of the cap (3) with the semiconductor substrate (4) is heated.

  Thermoplastic polyimide or polyamideimide has the property of increasing the adhesive force upon heating. Therefore, if these materials are used for the cap (3) and the cap (3) and the semiconductor substrate (4) come into contact with each other, if the cap (3) is heated, a separate bonding means (3c) is used as the cap. The cap (3) and the semiconductor substrate (4) can be bonded without being provided in (3).

  Hereinafter, the best mode for carrying out the present invention will be described using Examples 1 to 3.

[Example 1]
During the manufacturing process of a semiconductor dynamic quantity sensor such as an acceleration sensor or a gyro sensor provided with a movable part, a process of forming a cap that covers the sensor and bonding the cap is a feature. These steps are performed after a sensor element is formed on a semiconductor wafer by a normal semiconductor process and before a step such as dicing is performed.

  FIG. 1 is a schematic cross-sectional view showing a part of a manufacturing process of a semiconductor dynamic quantity sensor to which an embodiment of the present invention is applied. Hereinafter, with reference to this figure, the manufacturing method of the semiconductor dynamic quantity sensor of this embodiment is demonstrated.

  First, as shown in FIG. 1A, a support substrate 1 composed of a glass substrate or the like and a thermal release agent 2 are prepared, and the thermal release agent 2 is attached to the surface of the support substrate 1. This thermal release agent 2 has a sheet-like shape provided with a large number of through holes 2 a perpendicular to the surface of the support substrate 1. That is, by providing a large number of through holes 2 a in the thermal release agent 2, the contact area between the thermal release agent 2 and the cap is made smaller than when no through holes 2 a are provided. Further, the thermal release agent 2 is a material that can be easily peeled off because its holding power is reduced at a certain temperature, for example, 150 ° C. and 170 ° C. As such a heat release agent 2, thermoplastic polyimide, polyamideimide, or a commercially available material such as a heat release sheet (trade name: Riva Alpha, manufactured by Nitto Denko Corporation) can be used.

  Next, the cover part 3a and the support part 3b of the cap 3 which are components of the cap 3 are prepared. The lid 3a covers the sensor element 4a formed on the semiconductor wafer 4 shown in FIG. 1E described later, and has a rectangular plate shape as shown in FIG.

  The lid 3a is attached to the surface of the thermal release agent 2 as shown in FIG. The attachment positions of the lids 3a are positions where the corresponding sensor elements 4a are covered and the pads 4b described later are exposed when bonded to the semiconductor wafer 4.

  Furthermore, as shown in FIG.1 (c), the support part 3b of the resin used as a spacer is formed in the four sides of each cover part 3a. As shown in FIG. 3, the shape of the support portion 3b is a frame shape having the same outer diameter as that of the lid portion 3a. As a forming method, for example, a printing method is suitable. Thus, by forming the support part 3b on the cover part 3a, the part in which the support part 3b is not formed among the cover parts 3a becomes the cavity 3d (dent), and the cap 3 is completed.

  Next, as shown in FIG. 1D, the adhesive 3c is dispensed. That is, the adhesive 3c is applied to the support portion 3b.

  As the adhesive 3c used at this time, for example, an organic adhesive such as a silicone adhesive or an epoxy adhesive can be used. In addition, if the support board | substrate 1 which affixed the several cap 3 to the thermal release agent 2 beforehand is prepared like the present Example 1, the adhesive agent 3c will be apply | coated to the support part 3b of the several cap 3 at once. Is possible.

  Subsequently, a process of bonding the cap 3 to the semiconductor wafer 4 is performed.

  Specifically, as shown in FIG. 1E, a support substrate 1 having a cap 3 formed thereon is disposed above a semiconductor wafer 4 in which sensor elements 4a and pads 4b are formed. At this time, the surface of the support substrate 1 on the cap side and the surface of the semiconductor wafer 4 on which the sensor element 4a is formed are made to face each other. Then, alignment is performed so that each sensor element 4a and each cap 3 correspond to each other by using an alignment mark attached to the support substrate 1 or the semiconductor wafer 4 by an alignment apparatus (not shown).

  Subsequently, using a wafer bonding apparatus (not shown), heating and pressurization are performed in the direction of the arrow in FIG. 1 (f), that is, from the support substrate side to the adhesive side. Thereby, the support part 3b adhere | attaches on the surface of the semiconductor wafer 4 via the adhesive agent 3c, and the cap 3 is affixed. At this time, as described above, since the cavity 3d is formed by the lid portion 3a and the support portion 3b of the cap 3, the cap 3 can cover the sensor element 4a.

  Moreover, since the temperature of the thermal release agent 2 becomes a temperature (for example, 150 ° C. and 170 ° C.) at which the holding power decreases due to this heating and pressurization, the holding force between the lid 3 a and the thermal release agent 2 is It becomes smaller than the adhesive force between the adhesive 3 c and the semiconductor wafer 4. For this reason, as shown in FIG.1 (g), the cap 3 can be easily peeled from the heat release agent 2. FIG.

  Through the above steps, a structure in which each sensor element 4a is covered with the cap 3 is completed. Thereafter, after performing wafer inspection or the like as necessary, each sensor element 4a is divided into chips by dicing cut, thereby completing a structure in which the sensor element 4a is covered with the cap 3. Here, the surface on which the dicing cut is performed will be described with reference to FIG. 4 and FIG.

  FIG. 4 is a bird's-eye view of the direction of the semiconductor wafer 4 from a cross section taken along the plane A-A ′ of FIG. Then, the dicing cut is performed on the B-B ′ plane and the C-C ′ plane. At this time, since the cap 3 is already divided for each sensor element, there is no need to perform a process such as dividing the cap 3 separately.

  According to the manufacturing method of the semiconductor dynamic quantity sensor of the first embodiment described above, the following effects can be obtained.

  As a first effect, since each cap 3 is originally bonded to the semiconductor wafer 4 in a state of being divided, only the sensor element 4a that needs to be covered can be covered. As a result, it is possible to eliminate the need for complicated processing such as etching and grinding to expose the pad portion necessary for extracting the electrode connected to the sensor circuit. Furthermore, since it is not necessary to perform complicated processing such as etching and grinding, an inexpensive and durable resin can be used for the material of the cap 3, and the manufacturing cost can be reduced.

  The cap 3 is attached to the semiconductor wafer 4 and can be easily peeled off from the thermal release agent 2 by heating. For this reason, as a second effect, it is possible to perform a process such as dicing cut, leaving only the cap 3 divided for each sensor element 4a, and thereafter, the product itself may be provided with the cap 3. It becomes possible. Thereby, the cap 3 can also be used as a permanent cap.

  By the way, although the through-hole 2a was provided in the sheet-like thermal release agent 2 in the present Example 1, since it is sufficient that the contact area with the lid portion 3a is small, it can be implemented by a method other than providing the through-hole 2a. . For example, as a method of reducing the contact area, a method of making the thermal release agent 2 porous can be considered. Furthermore, the thermal release agent 2 is not in the form of a sheet, but may be a shape formed by printing such as a dot or line on a support substrate, or may be formed using an inkjet or the like.

  Moreover, although it is preferable that the area of the thermal peeling agent 2 provided with many through-holes 2a and the cap 3 is smaller than the contact area of the below-mentioned cap 3 and the semiconductor wafer 4, the contact area does not necessarily need to be small. Before the heating step in FIG. 1 (f), even if the holding power of the thermal release agent 2 is stronger than the adhesive strength of the adhesive 3c, the holding power of the thermal release agent 2 is increased in the heating step in FIG. 1 (f). What is necessary is just to become weaker than the adhesive force of 3c.

[Example 2]
Example 2 will be described with reference to FIG. The second embodiment is different from the first embodiment in that the cap 3 is formed by etching. In addition, about the structure equivalent to above-mentioned Example 1, the code | symbol similar to Example 1 is attached | subjected and description in this Example 2 is abbreviate | omitted.

  FIG. 5 is a cross-sectional view showing the process of forming the cap 3 in the second embodiment. Hereinafter, a description will be given with reference to this figure.

  First, as shown in FIG. 5A, a thermal release agent 2 with reduced adhesive strength is formed on a support substrate 1 by providing a through hole 2 a, and then a resin product is formed on the thermal release agent 2. The cap forming layer 6 is formed. The cap forming layer 6 is formed of, for example, thermosetting polyimide. At this time, the cap forming layer 6 has a thickness that combines the cover portion 3a and the support portion 3b described in the first embodiment.

  Subsequently, as shown in FIG. 5B, a resist 7 (first mask) is formed on the surface of the cap formation layer 6. Next, as shown in FIG. 5C, the resist 7 at a position to be the cavity 3d is removed by exposure and development processing.

  Next, as shown in FIG. 5D, the cavity 3d is formed by wet etching, for example, halfway through the thickness of the cap forming layer 6 using the resist 7 as a mask. At this time, since the cap forming layer 6 is made of thermosetting polyimide or the like, the etching selectivity can be increased, and good etching can be performed.

  Then, after removing the resist 7 by cleaning, a resist 8 (second mask) is formed on the entire surface of the cap forming layer 6 as shown in FIG. Then, by exposure and development processing, as shown in FIG. 5 (f), an opening is provided in a portion of the cap forming layer 6 that does not become the cap 3, that is, in the resist 8 in a region where each cap 3 is divided. Thereafter, as shown in FIG. 5G, the cap forming layer 6 is removed until the surface of the thermal release agent 2 is reached by, for example, wet etching using the resist 8 as a mask.

  In this manner, the cap forming layer 6 is divided, and a plurality of caps 3 having cavities 3d are formed. After that, by performing the processes after FIG. 1E described above, the structure in which each sensor element 4a is covered with the cap 3 is completed as in the first embodiment. As described above, when the cap forming layer 6 is made of thermosetting polyimide or the like, it is preferable to perform the application process of the adhesive 3c shown in FIG. .

  According to the second embodiment described above, since a durable resin can be used for the material of the cap 3 as in the first embodiment, it can be used as a permanent cap. Moreover, in the case of the present Example 2, since the cap 3 is formed from the cap formation layer 6, the process for parting each cap 3 is required. However, since this dividing step can be performed before the cap 3 is bonded to the semiconductor wafer 4, finally, the same operational effects as those of the first embodiment can be obtained.

Example 3
Example 3 will be described with reference to FIG. The third embodiment is different from the above-described embodiments in that the cap 3 is held without using the thermal release agent 2 and is attached to the semiconductor wafer 4. In addition, about the structure equivalent to each above-mentioned Example, the code | symbol similar to each Example is attached | subjected and description in this Example 3 is abbreviate | omitted.

  FIG. 6 is a cross-sectional view showing a process of attaching the cap 3 to the semiconductor wafer 4 in the third embodiment. FIG. 6A shows the support substrate 1. The support substrate 1 includes a plurality of gas passage holes on the surface in contact with the cap 3. The gas passage hole communicates with a transformer device (not shown). A transformer device (not shown) can suck or pump the gas present in the gas passage hole.

  In FIG. 6B, the cap 3 coated with the adhesive 3c comes into contact with the support substrate 1, and the gas inside the gas passage hole is sucked by the transformer. As a result, the cap 3 is attracted to the support substrate 1.

  Next, as shown in FIG. 6C, the support substrate 1 is brought into contact with the semiconductor wafer 4 while the cap 3 is adsorbed, and heating and pressurization are performed from the support substrate side to the semiconductor wafer side. By this heating and pressurization, the cap 3 is attached to the semiconductor wafer 4 via the adhesive 3c.

  FIG. 6D shows a process performed after the cap 3 is bonded and fixed to the semiconductor wafer 4. In this step, the gas existing in the gas passage hole is pumped by the transformer and the support substrate 1 is moved away from the semiconductor wafer 4. As a result, the cap 3 is peeled off from the support substrate 1.

  As described above, the gas passage hole 5 is provided in the support substrate 1, and the cap 3 can be easily attached to the semiconductor wafer 4 by changing the pressure applied to the gas passage hole 5. The same operational effects can be achieved.

[Other Examples]
In Example 1 described above, the thermal release agent 2 was heated by heating and pressing from the support substrate side to the adhesive side, but the semiconductor wafer 4 and the entire support substrate were overheated in a heating furnace or the like. It does not matter as a form to do.

  In Example 1 described above, an example in which the thermal release agent 2 is used has been described. However, an adhesive film having a small adhesive force can also be used. In addition to films that are peeled off by heat, use UV-cured films whose holding power is reduced by UV irradiation, or films that can be easily peeled off by solvents, chemicals, their vapors, or water vapor. Is also possible. For example, when the organic adhesive 3c is used, the organic solvent such as IPA (isopropyl alcohol) or acetone xylene is used as a solvent, so that the adhesive 3c portion is easily supported from the cap 3 by immersing in the solvent. The substrate 1 can be peeled off.

  In FIG. 1 of Example 1 and FIG. 5 of Example 2, the plurality of through-holes 2a provided in the thermal release agent 2 have the same shape. Similarly, in FIG. 6 of Example 3, the plurality of gas passage holes 5 provided in the support substrate 1 all have the same shape.

  However, the through hole 2a and the gas passage hole 5 do not have to have the same shape. For example, it is assumed that when the cap 3 is peeled off, the end portion of the lid portion 3a of the cap 3 is more easily peeled than the center portion of the lid portion 3a. At this time, in the heat release agent 2, the portion where the center portion of the lid portion 3 a contacts is provided with a larger through-hole 2 a than the portion where the end portion of the lid portion 3 a contacts, so that the local holding force on the lid portion 3 a The cap 3 can be peeled from the thermal release agent 2 without acting.

  Thus, by changing the shapes of the through hole 2 a and the gas passage hole 5, it is possible to adjust the ease with which the cap 3 is peeled off. Further, the ease of peeling or the like can be adjusted by the number of through holes 2a and gas passage holes 5.

  In Example 1 and Example 2 described above, the means provided for adjusting the holding force was the plurality of through holes 2. However, in order to adjust the contact area of the thermal release agent 2, it is not necessarily a through hole. For example, unevenness may be provided on the contact surface of the thermal release agent 2 on the lid side.

  In the above-described first to third embodiments, the pad 4b has been described as an example of the region that is not covered with the cap 3 when the cap 3 is attached to the semiconductor wafer 4. However, the region not covered by the cap 3 is not limited to the pad 4b. For example, a dicing cut is performed after the cap 3 is attached to the semiconductor wafer 4, and after the dicing cut, the semiconductor wafer portion having a structure in which the cap 3 is covered with the sensor element 4a separated from each other is formed by a robot arm or the like Suppose that it is gripped. An area gripped by the robot arm or the like may be an area not covered by the cap 3.

  In the first to third embodiments, the space surrounded by the cap 3 and the semiconductor wafer 4 is a sealed space, that is, a sealed space. However, the cap 3 may have a mesh shape or a structure provided with holes to the extent that the passage of fragments or water droplets of the semiconductor wafer 4 can be prevented.

2 is a cross-sectional view of each step shown in Example 1. FIG. FIG. 3 is a bird's eye view of the lid 3a shown in the first embodiment. 3 is a bird's-eye view of a support portion 3b shown in Example 1. FIG. 3 is a bird's-eye view with respect to the semiconductor wafer 4 from the cross section of the support portion 3b shown in Example 1. FIG. 10 is a cross-sectional view of each step shown in Example 2. FIG. FIG. 10 is a cross-sectional view of each step shown in Example 3.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Support substrate 2 Thermal release agent 2a Through-hole 3 Cap 3a Cover part 3b Support part 3c Adhesive 3d Cavity 4 Semiconductor wafer 4a Sensor element 4b Pad 5 Gas passage hole 6 Cap formation layer 7 Resist (1st mask)
8 resist (second mask)

Claims (8)

A preparation step of preparing a plurality of caps (3) each divided and provided with an adhesive means (3c);
A holding step of holding the plurality of caps (3) by holding means (1, 2);
A covering step in which each of the caps (3) held by the holding means (1, 2) covers a plurality of semiconductor elements (4a) provided on the semiconductor substrate (4);
A bonding step of bonding the cap (3) to the semiconductor substrate (4) by the bonding means (3c);
A peeling step of peeling the plurality of caps (3) from the holding means (1, 2),
In the holding step, the holding means (1, 2) holds the plurality of caps (3) at a predetermined region (4b) in the semiconductor substrate (4) after the bonding step. ) is a position that is exposed from the,
In the peeling step, the holding force that the holding means (1, 2) holds the cap (3) is smaller than the adhesive force of the bonding means (3c),
The holding means comprises a support substrate (1) and a release agent (2) installed on the support substrate (1).
In the holding step, the cap (3) is contacted and held by the release agent (2), and the area where the release agent (2) contacts the cap (3) is the bonding means ( 3. A method of manufacturing a semiconductor device, wherein 3c) is smaller than an area bonded to the semiconductor substrate (4) . A preparation step of preparing a plurality of caps (3) each divided and provided with an adhesive means (3c);
A holding step of holding the plurality of caps (3) by holding means (1, 2);
A covering step in which each of the caps (3) held by the holding means (1, 2) covers a plurality of semiconductor elements (4a) provided on the semiconductor substrate (4) ;
A bonding step of bonding the cap (3) to the semiconductor substrate (4) by the bonding means (3c);
A peeling step of peeling the plurality of caps (3) from the holding means (1, 2),
In the holding step, the holding means (1, 2) holds the plurality of caps (3) at a predetermined region (4b) in the semiconductor substrate (4) after the bonding step. ) Exposed from
The holding means comprises a support substrate (1) and a release agent (2) installed on the support substrate (1).
In the holding step, the cap (3) is contacted and held by the release agent (2), and the area where the release agent (2) contacts the cap (3) is the bonding means ( method for producing a semi-conductor device, characterized in that 3c) is smaller than the area of bonding the the semiconductor substrate (4). In the covering step, the semiconductor element (4a) The manufacturing method of a semiconductor device according to claim 1 or 2, characterized in the cap (3) and being sealed by the said semiconductor substrate (4) . The cap (3) includes a lid part (3a) and a support part (3b) sandwiched between the lid part (3a) and the semiconductor substrate (4).
Said support portion (3b) The manufacturing method of a semiconductor device according to any one of claims 1 to 3, characterized in that it is formed to have an opening in the junction surface between the semiconductor substrate (4) . The lid (3a) and the support (3b) are separate members,
It said holding step, wherein the steps said holding means (1,2) holds the lid part (3a), the Rukoto such and a step of joining said support portion (3b) on the lid (3a) A method for manufacturing a semiconductor device according to claim 4 . The release agent (2) is one whose adhesive properties change due to temperature change,
It said holding step, in said separation step, a method of manufacturing a semiconductor device according to claim 1 or 2, characterized in that the temperature of the release agent (2) are different. In the stripping step, the temperature of the release agent (2) The manufacturing method of a semiconductor device according to 請 Motomeko 6, characterized in that it is set to a temperature at which the holding force is reduced. The plurality of caps (3) are formed of thermoplastic polyimide or polyamideimide,
When said plurality of caps (3) are in contact said semiconductor substrate (4), according to claim 1 wherein the contact surface between the semiconductor substrate (4) of the cap (3) is characterized in that it is heated Item 8. A method for manufacturing a semiconductor device according to Item 7.

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